WO2016101397A1 - 防止蒸镀材料喷溅及塞孔的坩埚 - Google Patents

防止蒸镀材料喷溅及塞孔的坩埚 Download PDF

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Publication number
WO2016101397A1
WO2016101397A1 PCT/CN2015/072553 CN2015072553W WO2016101397A1 WO 2016101397 A1 WO2016101397 A1 WO 2016101397A1 CN 2015072553 W CN2015072553 W CN 2015072553W WO 2016101397 A1 WO2016101397 A1 WO 2016101397A1
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Prior art keywords
cover
crucible
upper cover
plugging
air outlet
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PCT/CN2015/072553
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English (en)
French (fr)
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匡友元
邹清华
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深圳市华星光电技术有限公司
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Publication of WO2016101397A1 publication Critical patent/WO2016101397A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Definitions

  • the present invention relates to the field of manufacturing of organic electroluminescent display devices, and more particularly to a crucible for preventing splashing and plugging of vapor-deposited materials.
  • the flat panel display device has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • the existing flat panel display devices mainly include a liquid crystal display (LCD) and an organic light emitting display (OLED).
  • LCD liquid crystal display
  • OLED organic light emitting display
  • LCD liquid crystal display
  • OLED display device compared with LCD, OLED display device not only has excellent display performance, but also has all-solid state, self-illumination, simple structure, ultra-thin, fast response, wide viewing angle, low power consumption and flexible display.
  • Known as "Dream Display” it has been favored by major display manufacturers and has become the main force of the third generation of display devices in the display technology field.
  • An OLED display device is generally composed of an anode, a cathode, and an organic electroluminescent material layer sandwiched between an anode and a cathode.
  • the organic electroluminescent material layer further includes a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer. And electron injection layer.
  • the luminescence mechanism of the OLED display device is to inject electrons and holes from the cathode and the yang respectively, and the injected electrons and holes are recombined in the luminescent layer to excite the luminescent layer molecules to generate singlet excitons, singlet excitons.
  • the radiation is attenuated to emit light.
  • the mainstream preparation method of the OLED display device is a vacuum thermal evaporation method, in which a vapor deposition material such as an organic small molecular material is heated in a vacuum chamber to evaporate or vaporize the vapor deposition material into steam at a certain temperature. An opening in the metal mask is deposited on the substrate.
  • each layer of the OLED display device have a great influence on the performance.
  • the coating machine using the point evaporation source is rotating the substrate.
  • the organic material is deposited under the state, but the utilization rate of the vapor deposition material is very low, about 5%.
  • the subsequent development of the line evaporation source coating machine not only enables the film thickness of the organic material to be uniform, but also improves the utilization rate of the evaporation material to about 20%.
  • the conventional crucible generally includes a body 100 for accommodating the vapor deposition material 200 and a cover 300 covering the open end of the body 100.
  • the center of the cover 300 is provided with a unique air outlet 310. Due to the low thermal conductivity of organic materials and the temperature difference between the heating sources, the temperature difference between the upper and lower sections and the horizontal temperature difference appear in the crucible, which makes the process stability of the material evaporation process more difficult to control, and some materials are prone to different phase changes.
  • the material is During the heating process, due to the phase transition from the solid state to the molten state, the steam directly releases a large amount of gas through the single vent 310, which may cause the material to splatter and contaminate the heating source and the vacuum chamber.
  • An object of the present invention is to provide a crucible for preventing splashing and plugging of a vapor deposition material, which can improve the heat balance inside the large diameter crucible and the balance between the temperature and the evaporation rate, and solve the problem that the evaporation rate is unstable, the pores are easily blocked, and the pores are pre-empted.
  • the present invention provides a crucible for preventing splashing and plugging of a vapor deposition material, comprising a crucible body for containing an evaporation material, and a lid body covering the open end of the crucible body;
  • the cover body includes an upper cover, a lower cover and a connecting portion connecting the upper cover and the lower cover; the upper cover and the lower cover are spaced apart along an axial direction of the body;
  • the inner diameter of the upper cover is equal to the outer diameter of the body, and is located at the open end of the body; the outer diameter of the lower cover is smaller than the inner diameter of the body, and is located inside the body;
  • the upper cover has an upper opening area, and the upper opening area is provided with a plurality of upper air outlet holes, the lower cover has a lower opening area, and the lower opening area is provided with a plurality of lower air outlet holes, and the plurality of upper air outlets are provided
  • the stomata do not coincide with several lower vents.
  • the connecting portions are respectively connected to the centers of the upper cover and the lower cover; wherein the upper cover and the lower cover are spaced apart from each other along the axial direction of the body by 1% to 10% of the height of the body.
  • the total area of the plurality of lower air outlets is larger than the total area of the plurality of upper air outlet holes.
  • the plurality of upper air outlets are symmetrically distributed about a center of the upper cover, and the plurality of lower air holes are symmetrically distributed about a center of the lower cover.
  • the total area of the plurality of upper air outlets accounts for 20% to 80% of the upper opening area; and the total area of the plurality of lower air outlets accounts for 30% to 90% of the lower opening area.
  • the height of the upper surface of the upper cover is lower than the height of the heat source provided on the periphery of the body by 5 mm to 20 mm.
  • the upper opening region and the lower opening region have a circular shape, an elliptical shape, or a square shape; and the upper air outlet and the lower air outlet have a circular shape, an arc shape, or an elliptical shape.
  • the upper opening area takes the center of the upper cover as an origin and occupies a 0-4/5 area of the upper cover radius; the lower opening area takes the center of the lower cover as an origin, and occupies 1/10 of the radius of the lower cover. ⁇ 9/10 area; the radius of the lower cover is 1/10 to 9/10 of the inner diameter of the corpus callosum.
  • the upper opening area takes the center of the upper cover as an origin and occupies a quarter to 1/2 area of the radius of the upper cover; the radius of the lower cover is 1/2 to 4/5 of the inner diameter of the upper body.
  • the upper air outlet has a chamfering angle, and the angle of the chamfer is 30° to 60°.
  • the invention also provides a crucible for preventing splashing and plugging of the vapor deposition material, comprising a crucible body for containing the vapor deposition material, and a cover body covering the open end of the crucible body;
  • the cover body includes an upper cover, a lower cover and a connecting portion connecting the upper cover and the lower cover; the upper cover and the lower cover are spaced apart along an axial direction of the body;
  • the inner diameter of the upper cover is equal to the outer diameter of the body, and is located at the open end of the body; the outer diameter of the lower cover is smaller than the inner diameter of the body, and is located inside the body;
  • the upper cover has an upper opening area, and the upper opening area is provided with a plurality of upper air outlet holes, the lower cover has a lower opening area, and the lower opening area is provided with a plurality of lower air outlet holes, and the plurality of upper air outlets are provided
  • the vent hole does not coincide with the plurality of lower vent holes;
  • the connecting portion is respectively connected to the center of the upper cover and the lower cover; the distance between the upper cover and the lower cover along the axial direction of the body is 1% to 10% of the height of the body;
  • the total area of the plurality of lower air outlets is greater than the total area of the plurality of upper air outlet holes
  • the height of the upper surface of the upper cover is lower than the height of the heating source provided on the periphery of the body by 5 mm to 20 mm;
  • the upper air outlet has a chamfering angle, and the angle of the chamfer is 30° to 60°.
  • the present invention provides a crucible for preventing splashing and plugging of an evaporation material, the cover body comprising an upper cover, a lower cover and a connecting portion connecting the upper cover and the lower cover, and the upper cover is provided
  • the lower cover is spaced apart along the axial direction of the body, a plurality of upper air outlet holes are disposed in the upper opening area of the upper cover, and a plurality of lower air outlet holes are disposed in the lower opening area of the lower cover, and the number is set
  • the upper vents and the plurality of lower vents do not overlap, so that during the phase change of the vapor deposition material, the gas directly discharged by the material vapor through the lower cover is buffered in the relatively closed space between the lower cover and the upper cover, and is performed twice.
  • Adjustment improve the heat balance inside the large diameter crucible and balance the temperature and evaporation rate, thereby stabilizing the evaporation rate, solving the problem of unstable evaporation rate, easy to block the pores and splashing of materials during pre-melting, and improve the evaporation process. Stability, improve the productivity of the evaporation equipment.
  • FIG. 1 is a schematic cross-sectional structural view of a conventional crucible
  • FIG. 2 is a schematic longitudinal cross-sectional structural view of a crucible for preventing splashing and plugging of an evaporation material according to the present invention
  • FIG. 3 is a schematic longitudinal cross-sectional structural view of a cover body for preventing splattering and plugging of an evaporation material according to the present invention
  • FIG. 4 is a schematic transverse cross-sectional view showing a first structural form of a cover upper cover for preventing splattering and plugging of an evaporation material according to the present invention
  • FIG. 5 is a schematic transverse cross-sectional view showing a second structure of a cover upper cover for preventing splattering and plugging of an evaporation material according to the present invention
  • FIG. 6 is a transverse cross-sectional view showing a third structural form of a cover upper cover for preventing splattering and plugging of an evaporation material according to the present invention
  • Figure 7 is a transverse cross-sectional view showing a fourth structure of the cover of the cover body for preventing the splashing of the vapor deposition material and the plug hole of the present invention
  • Figure 8 is a transverse cross-sectional view showing the first structural form of the cover lower cover for preventing the splashing of the vapor deposition material and the plug hole of the present invention
  • FIG. 9 is a schematic transverse cross-sectional view showing a second structure of a cover lower cover for preventing splattering and plugging of an evaporation material according to the present invention.
  • FIG. 10 is a transverse cross-sectional view showing a third structural form of a cover lower cover for preventing splattering and plugging of an evaporation material according to the present invention
  • Fig. 11 is a transverse cross-sectional view showing a fourth structural form of a cover lower cover for preventing splattering and plugging of an evaporation material according to the present invention.
  • the present invention provides a crucible for preventing splashing and plugging of a vapor deposition material, comprising a crucible body 1 for accommodating the vapor deposition material 2, and a cover body disposed at the open end of the crucible body 1. Cover body 3.
  • the cover body 3 includes an upper cover 31, a lower cover 33, and a connecting portion 32 connecting the upper cover 31 and the lower cover 33.
  • the upper cover 31 and the lower cover 33 are spaced apart along the axial direction of the body 1.
  • the inner diameter of the upper cover 31 is equal to the outer diameter of the body 1, and is located at the open end of the body 1; the outer diameter of the lower cover 33 is smaller than the inner diameter of the body 1, and is located inside the body 1. .
  • the upper cover 31 has an upper opening area 311.
  • the upper opening area 311 is provided with a plurality of upper air outlets 313.
  • the lower cover 33 has a lower opening area 331.
  • the lower opening area 331 is provided with a plurality of lower air outlets. 333, the plurality of upper air outlets 313 and the plurality of lower air outlets 333 do not overlap to the maximum extent.
  • the upper cover 31 and the lower cover 33 are spaced apart along the axial direction of the body 1, the upper cover 31 is A plurality of upper air outlets 313 are disposed in the upper opening region 311, a plurality of lower air outlet holes 333 are disposed in the lower opening region 331 of the lower cover 33, and the plurality of upper air outlet holes 313 and the plurality of lower air outlet holes 333 are disposed.
  • the maximum degree of misalignment is such that during the phase change of the vapor deposition material 2, the gas released by the material vapor directly through the lower cover 33 is buffered in the relatively closed space between the lower cover 33 and the upper cover 31, and the secondary adjustment is performed to increase the size.
  • the internal heat balance of the diameter ⁇ and the balance of temperature and evaporation rate stabilize the evaporation rate, solve the problem of unstable evaporation rate, easy to block the pores and splashing of materials during pre-melting, improve the stability of the evaporation process, and improve the stability.
  • the rate of operation of the evaporation equipment stabilizes the evaporation rate, solve the problem of unstable evaporation rate, easy to block the pores and splashing of materials during pre-melting, improve the stability of the evaporation process, and improve the stability.
  • the cover 3 is made of a metal having a high thermal conductivity and a hard material.
  • the cover 3 is made of an aluminum alloy or a titanium alloy.
  • the connecting portions 32 are respectively connected to the centers of the upper cover 31 and the lower cover 33.
  • the distance H between the upper cover 31 and the lower cover 33 along the axial direction of the body 1 is 1% to 10% of the height of the body 1.
  • the height of the upper surface of the upper cover 31 is lower than the height of the heat source 5 provided on the periphery of the body 1 by 5 mm to 20 mm.
  • the radius of the lower cover 33 is 1/10 to 9/10 of the inner diameter of the body 1, and preferably, the radius of the lower cover 33 is 1/2 to 4/5 of the inner diameter of the body 1.
  • the upper air outlet 313 has a chamfer ⁇ , and the angle of the chamfer ⁇ is 30° to 60°, and the opening size of the chamfer ⁇ is gradually decreased from the bottom to the top, which helps prevent the vapor deposition material from blocking the upper air outlet 313. And prevent evaporation of the evaporation material.
  • the total area of the plurality of lower air outlets 333 is larger than the total area of the plurality of upper air outlets 313, and the material vapor in the evaporation process is ensured between the upper cover 31 and the lower cover 33.
  • a saturated vapor pressure is formed outside the body 1.
  • the shape of the upper opening region 311 may be a circle as shown in FIG. 4 to FIG. 7 , or may be an ellipse, a square or the like.
  • the plurality of upper air outlets 313 are symmetrically distributed about the center of the upper cover 31, and may have a circular shape as shown in FIG. 4 and FIG. 5, as shown in FIG. 6 and FIG. It can be oval or the like.
  • the number, shape, and arrangement of the plurality of upper air outlets 313 are not specifically limited, and may be set according to design requirements.
  • the upper opening region 311 takes the center of the upper cover 31 as an origin and occupies a 0 to 4/5 region of the radius of the upper cover 31.
  • the upper opening region 311 is originated from the center of the upper cover 31. It occupies the 1/4 to 1/2 area of the radius of the upper cover 31.
  • the total area of the plurality of upper air outlets 313 accounts for 20% to 80% of the upper opening area 311.
  • the shape of the lower opening region 331 may be a circle as shown in FIG. 8 to FIG. 11 , or may be an ellipse, a square, or the like.
  • the plurality of lower air outlets 333 are symmetrically distributed about the center of the lower cover 33, and may have a circular shape as shown in FIG. 8 and FIG. 9, as shown in FIG. 10 and FIG. It can be oval or the like.
  • the number, shape, and arrangement of the plurality of lower air outlets 333 are not specifically limited, and may be set according to design requirements.
  • Lower opening area The field 331 takes the center of the lower cover 33 as an origin and occupies a 1/10 to 9/10 area of the radius of the lower cover 33.
  • the total area of the plurality of lower air outlets 333 is 30% to 90% of the lower opening area 331.
  • the cover of the present invention for preventing splashing and plugging of the vapor deposition material comprises a cover, a lower cover and a connecting portion connecting the upper cover and the lower cover, and the upper cover and the lower cover are arranged along the top cover.
  • a plurality of upper air outlet holes are disposed in an upper opening area of the upper cover, a plurality of lower air outlet holes are disposed in a lower opening area of the lower cover, and the plurality of upper air outlet holes are disposed It does not overlap with several lower air outlets, so that during the phase change of the vapor deposition material, the gas released by the material vapor directly through the lower cover is buffered in the relatively closed space between the lower cover and the upper cover, and the secondary adjustment is performed to increase the size.
  • the internal heat balance of the diameter ⁇ and the balance of temperature and evaporation rate stabilize the evaporation rate, solve the problem of unstable evaporation rate, easy to block the pores and splashing of materials during pre-melting, improve the stability of the evaporation process, and improve the stability.
  • the rate of operation of the evaporation equipment stabilizes the evaporation rate, solve the problem of unstable evaporation rate, easy to block the pores and splashing of materials during pre-melting, improve the stability of the evaporation process, and improve the stability.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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  • Mechanical Engineering (AREA)
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Abstract

本发明提供一种防止蒸镀材料喷溅及塞孔的坩埚，包括一用于容纳蒸镀材料（2）的埚体（1）、及盖设于埚体（1）开口端的盖体（3）；所述盖体（3）包括上盖（31）、下盖（33）及连接所述上盖（31）与下盖（33）的连接部（32）；所述上盖（31）与下盖（33）沿埚体（1）的轴向间隔开；所述上盖（31）的上开口区域（311）内设有数个上出气孔（313），所述下盖（33）的下开口区域（331）内设有数个下出气孔（333），所述数个上出气孔（313）与数个下出气孔（333）不重合。本发明能够提高大直径坩埚内部的热平衡以及温度和蒸镀速率的平衡，解决蒸镀速率不稳定、易堵塞出气孔及预熔时材料喷溅的问题，改善蒸镀制程的稳定性，提高蒸镀设备的稼动率。

Description

防止蒸镀材料喷溅及塞孔的坩埚 技术领域
本发明涉及有机电致发光显示器件的制程领域，尤其涉及一种防止蒸镀材料喷溅及塞孔的坩埚。
背景技术
平板显示器件具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有的平板显示器件主要包括液晶显示器件(Liquid Crystal Display，LCD)及有机电致发光显示器件(Organic Light Emitting Display，OLED)。其中，OLED显示器件相较于LCD，不仅具有十分优异的显示性能，还具有全固态、自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性，被誉为“梦幻显示器”，得到了各大显示器厂家的青睐，已成为显示技术领域中第三代显示器件的主力军。
OLED显示器件通常由阳极、阴极、以及夹在阳极和阴极之间的有机电致发光材料层构成，有机电致发光材料层又包括空穴注入层、空穴传输层、发光层、电子传输层、及电子注入层。OLED显示器件的发光机理是从阴、阳两级分别注入电子和空穴，被注入的电子和空穴经传输在发光层内复合，从而激发发光层分子产生单态激子，单态激子辐射衰减而发光。
目前，OLED显示器件主流的制备方法是真空热蒸镀法，即在真空腔体内使用坩埚加热有机小分子材料等蒸镀材料，使蒸镀材料在一定温度下升华或者熔融汽化成蒸汽，透过金属掩膜板上的开孔沉积在基板上。
OLED显示器件各层的厚度和掺杂比例对其性能的影响很大，为了使沉积在基板各处的有机材料膜厚和掺杂比例均匀，使用点蒸发源的镀膜机是在使基板转动的状态下沉积有机材料，但此做法对蒸镀材料的利用率很低，约为5％。后续开发的线蒸发源的镀膜机不但能够使有机材料的膜厚较均匀，还能提高蒸镀材料的利用率至约20％。
随着越来越高世代的蒸镀机的出现，所使用的坩埚直径也越来越大。如图1所示，现有的坩埚一般包括用于容纳蒸镀材料200的埚体100、及盖在埚体100开口端的盖体300，该盖体300的中心设有唯一的出气孔310，由于有机材料的导热系数很低，且加热源存在温差，引起坩埚内部出现上下段温差和水平温差，导致材料蒸镀的制程稳定性越来越难调控，有些材料很容易发生不同的相态变化，导致坩埚的出气310堵塞，另外，材料在 升温过程中，由于发生固态到熔融态的相态转变，蒸汽会直接通过所述唯一的出气孔310释放大量气体，可能导致材料喷溅出坩埚，污染加热源及真空腔体。
发明内容
本发明的目的在于提供一种防止蒸镀材料喷溅及塞孔的坩埚，能够提高大直径坩埚内部的热平衡以及温度和蒸镀速率的平衡，解决蒸镀速率不稳定、易堵塞出气孔及预熔时材料喷溅的问题，改善蒸镀制程的稳定性，提高蒸镀设备的稼动率。
为实现上述目的，本发明提供一种防止蒸镀材料喷溅及塞孔的坩埚，包括一用于容纳蒸镀材料的埚体、及盖设于所述埚体开口端的盖体；
所述盖体包括上盖、下盖及连接所述上盖与下盖的连接部；所述上盖与下盖沿埚体的轴向间隔开；
所述上盖的内径等于埚体的外径，位于所述埚体的开口端；所述下盖的外径小于所述埚体的内径，位于所述埚体的内部；
所述上盖具有上开口区域，在该上开口区域内设有数个上出气孔，所述下盖具有下开口区域，在该下开口区域内设有数个下出气孔，所述数个上出气孔与数个下出气孔不重合。
所述连接部分别连接于上盖与下盖的中心处；；所述上盖与下盖沿埚体的轴向间隔距离为埚体高度的1％～10％。
所述数个下出气孔的总面积大于所述数个上出气孔的总面积。
所述数个上出气孔关于所述上盖的中心呈中心对称分布，所述数个下出气孔关于所述下盖的中心呈中心对称分布。
所述数个上出气孔的总面积占上开口区域的20％～80％；所述数个下出气孔的总面积占下开口区域的30％～90％。
所述上盖上表面的高度低于设于所述埚体外围的加热源的高度5mm～20mm。
所述上开口区域、下开口区域的形状为圆形、椭圆形、或方形；所述上出气孔、下出气孔的形状为圆形、弧形或椭圆形。
所述上开口区域以所述上盖的中心为原点，占据上盖半径的0～4/5区域；所述下开口区域以所述下盖的中心为原点，占据下盖半径的1/10～9/10区域；所述下盖的半径是埚体内径的1/10～9/10。
所述上开口区域以所述上盖的中心为原点，占据上盖半径的1/4～1/2区域；所述下盖的半径是埚体内径的1/2～4/5。
所述上出气孔具有倒角，倒角的角度为30°～60°。
本发明还提供一种防止蒸镀材料喷溅及塞孔的坩埚，包括一用于容纳蒸镀材料的埚体、及盖设于所述埚体开口端的盖体；
所述盖体包括上盖、下盖及连接所述上盖与下盖的连接部；所述上盖与下盖沿埚体的轴向间隔开；
所述上盖的内径等于埚体的外径，位于所述埚体的开口端；所述下盖的外径小于所述埚体的内径，位于所述埚体的内部；
所述上盖具有上开口区域，在该上开口区域内设有数个上出气孔，所述下盖具有下开口区域，在该下开口区域内设有数个下出气孔，所述数个上出气孔与数个下出气孔不重合；
其中，所述连接部分别连接于上盖与下盖的中心处；所述上盖与下盖沿埚体的轴向间隔距离为埚体高度的1％～10％；
其中，所述数个下出气孔的总面积大于所述数个上出气孔的总面积；
其中，所述上盖上表面的高度低于设于所述埚体外围的加热源的高度5mm～20mm；
其中，所述上出气孔具有倒角，倒角的角度为30°～60°。
本发明的有益效果：本发明提供的一种防止蒸镀材料喷溅及塞孔的坩埚，其盖体包括上盖、下盖及连接所述上盖与下盖的连接部，设置上盖与下盖沿埚体的轴向间隔开，在所述上盖的上开口区域内设置数个上出气孔，在所述下盖的下开口区域内设置数个下出气孔，并设置所述数个上出气孔与数个下出气孔不重合，使得蒸镀材料在相变的过程中，材料蒸汽直接通过下盖释放的气体在下盖与上盖之间相对密闭的空间中缓冲，进行二次调整，提高大直径坩埚内部的热平衡以及温度和蒸镀速率的平衡，从而稳定蒸镀速率，解决蒸镀速率不稳定、易堵塞出气孔及预熔时材料喷溅的问题，改善蒸镀制程的稳定性，提高蒸镀设备的稼动率。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为一种现有的坩埚的剖面结构示意图；
图2为本发明防止蒸镀材料喷溅及塞孔的坩埚的纵向剖面结构示意图；
图3为本发明防止蒸镀材料喷溅及塞孔的坩埚的盖体的纵向剖面结构示意图；
图4为本发明防止蒸镀材料喷溅及塞孔的坩埚的盖体上盖第一种结构形式的横向剖面示意图；
图5为本发明防止蒸镀材料喷溅及塞孔的坩埚的盖体上盖第二种结构形式的横向剖面示意图；
图6为本发明防止蒸镀材料喷溅及塞孔的坩埚的盖体上盖第三种结构形式的横向剖面示意图；
图7为本发明防止蒸镀材料喷溅及塞孔的坩埚的盖体上盖第四种结构形式的横向剖面示意图；
图8为本发明防止蒸镀材料喷溅及塞孔的坩埚的盖体下盖第一种结构形式的横向剖面示意图；
图9为本发明防止蒸镀材料喷溅及塞孔的坩埚的盖体下盖第二种结构形式的横向剖面示意图；
图10为本发明防止蒸镀材料喷溅及塞孔的坩埚的盖体下盖第三种结构形式的横向剖面示意图；
图11为本发明防止蒸镀材料喷溅及塞孔的坩埚的盖体下盖第四种结构形式的横向剖面示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2、图3，本发明提供一种防止蒸镀材料喷溅及塞孔的坩埚，包括一用于容纳蒸镀材料2的埚体1、及盖设于所述埚体1开口端的盖体3。
所述盖体3包括上盖31、下盖33及连接所述上盖31与下盖33的连接部32；所述上盖31与下盖33沿埚体1的轴向间隔开。
所述上盖31的内径等于埚体1的外径，位于所述埚体1的开口端；所述下盖33的外径小于所述埚体1的内径，位于所述埚体1的内部。
所述上盖31具有上开口区域311，在该上开口区域311内设有数个上出气孔313，所述下盖33具有下开口区域331，在该下开口区域331内设有数个下出气孔333，所述数个上出气孔313与数个下出气孔333最大程度不重合。
由于设置上盖31与下盖33沿埚体1的轴向间隔开，在所述上盖31的 上开口区域311内设置数个上出气孔313，在所述下盖33的下开口区域331内设置数个下出气孔333，并设置所述数个上出气孔313与数个下出气孔333最大程度不重合，使得蒸镀材料2在相变的过程中，材料蒸汽直接通过下盖33释放的气体在下盖33与上盖31之间相对密闭的空间中缓冲，进行二次调整，提高大直径坩埚内部的热平衡以及温度和蒸镀速率的平衡，从而稳定蒸镀速率，解决蒸镀速率不稳定、易堵塞出气孔及预熔时材料喷溅的问题，改善蒸镀制程的稳定性，提高蒸镀设备的稼动率。
具体的，所述盖体3由导热系数高、材质坚硬的金属制成，优选的，所述盖体3由铝合金、或钛合金制成。
所述连接部32分别连接于上盖31与下盖33的中心处。所述上盖31与下盖33沿埚体1的轴向间隔距离H为埚体1高度的1％～10％。所述上盖31上表面的高度低于设于所述埚体1外围的加热源5的高度5mm～20mm。所述下盖33的半径是埚体1内径的1/10～9/10，优选的，所述下盖33的半径是埚体1内径的1/2～4/5。
所述上出气孔313具有倒角Φ，倒角Φ的角度为30°～60°，所述倒角Φ的开口尺寸由下向上逐渐减小，有助于防止蒸镀材料堵塞上出气孔313及防止蒸镀材料喷溅。
值得一提的是，所述数个下出气孔333的总面积大于所述数个上出气孔313的总面积，保证蒸镀过程中的材料蒸汽在上盖31与下盖33之间对埚体1外部形成一个饱和蒸汽压。
进一步的，请同时参阅图4至图7，所述上开口区域311形状可为如4至图7所示的圆形，也可为椭圆形、或方形等。所述数个上出气孔313关于所述上盖31的中心呈中心对称分布，其形状可为如图4、图5所示的圆形，如图6、图7所示的弧形，也可为椭圆形等。该数个上出气孔313的数量、形状、排布方式并不做具体限制，可依据设计要求进行设置。所述上开口区域311以所述上盖31的中心为原点，占据上盖31半径的0～4/5区域，优选的，所述上开口区域311以所述上盖31的中心为原点，占据上盖31半径的1/4～1/2区域。所述数个上出气孔313的总面积占上开口区域311的20％～80％。
请同时参阅图8至图11，所述下开口区域331形状可为如8至图11所示的圆形，也可为椭圆形、或方形等。所述数个下出气孔333关于所述下盖33的中心呈中心对称分布，其形状可为如图8、图9所示的圆形，如图10、图11所示的弧形，也可为椭圆形等。该数个下出气孔333的数量、形状、排布方式并不做具体限制，可依据设计要求进行设置。所述下开口区 域331以所述下盖33的中心为原点，占据下盖33半径的1/10～9/10区域。所述数个下出气孔333的总面积占下开口区域331的30％～90％。
综上所述，本发明的防止蒸镀材料喷溅及塞孔的坩埚，其盖体包括上盖、下盖及连接所述上盖与下盖的连接部，设置上盖与下盖沿埚体的轴向间隔开，在所述上盖的上开口区域内设置数个上出气孔，在所述下盖的下开口区域内设置数个下出气孔，并设置所述数个上出气孔与数个下出气孔不重合，使得蒸镀材料在相变的过程中，材料蒸汽直接通过下盖释放的气体在下盖与上盖之间相对密闭的空间中缓冲，进行二次调整，提高大直径坩埚内部的热平衡以及温度和蒸镀速率的平衡，从而稳定蒸镀速率，解决蒸镀速率不稳定、易堵塞出气孔及预熔时材料喷溅的问题，改善蒸镀制程的稳定性，提高蒸镀设备的稼动率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种防止蒸镀材料喷溅及塞孔的坩埚，包括一用于容纳蒸镀材料的埚体、及盖设于所述埚体开口端的盖体；
    所述盖体包括上盖、下盖及连接所述上盖与下盖的连接部；所述上盖与下盖沿埚体的轴向间隔开；
    所述上盖的内径等于埚体的外径，位于所述埚体的开口端；所述下盖的外径小于所述埚体的内径，位于所述埚体的内部；
    所述上盖具有上开口区域，在该上开口区域内设有数个上出气孔，所述下盖具有下开口区域，在该下开口区域内设有数个下出气孔，所述数个上出气孔与数个下出气孔不重合。
  2. 如权利要求1所述的防止蒸镀材料喷溅及塞孔的坩埚，其中，所述连接部分别连接于上盖与下盖的中心处；所述上盖与下盖沿埚体的轴向间隔距离为埚体高度的1％～10％。
  3. 如权利要求1所述的防止蒸镀材料喷溅及塞孔的坩埚，其中，所述数个下出气孔的总面积大于所述数个上出气孔的总面积。
  4. 如权利要求3所述的防止蒸镀材料喷溅及塞孔的坩埚，其中，所述数个上出气孔关于所述上盖的中心呈中心对称分布，所述数个下出气孔关于所述下盖的中心呈中心对称分布。
  5. 如权利要求3所述的防止蒸镀材料喷溅及塞孔的坩埚，其中，所述数个上出气孔的总面积占上开口区域的20％～80％；所述数个下出气孔的总面积占下开口区域的30％～90％。
  6. 如权利要求1所述的防止蒸镀材料喷溅及塞孔的坩埚，其中，所述上盖上表面的高度低于设于所述埚体外围的加热源的高度5mm～20mm。
  7. 如权利要求5所述的防止蒸镀材料喷溅及塞孔的坩埚，其中，所述上开口区域、下开口区域的形状为圆形、椭圆形、或方形；所述上出气孔、下出气孔的形状为圆形、弧形或椭圆形。
  8. 如权利要求7所述的防止蒸镀材料喷溅及塞孔的坩埚，其中，所述上开口区域以所述上盖的中心为原点，占据上盖半径的0～4/5区域；所述下开口区域以所述下盖的中心为原点，占据下盖半径的1/10～9/10区域；所述下盖的半径是埚体内径的1/10～9/10。
  9. 如权利要求8所述的防止蒸镀材料喷溅及塞孔的坩埚，其中，所述上开口区域以所述上盖的中心为原点，占据上盖半径的1/4～1/2区域；所 述下盖的半径是埚体内径的1/2～4/5。
  10. 如权利要求1所述的防止蒸镀材料喷溅及塞孔的坩埚，其中，所述上出气孔具有倒角，倒角的角度为30°～60°。
  11. 一种防止蒸镀材料喷溅及塞孔的坩埚，包括一用于容纳蒸镀材料的埚体、及盖设于所述埚体开口端的盖体；
    所述盖体包括上盖、下盖及连接所述上盖与下盖的连接部；所述上盖与下盖沿埚体的轴向间隔开；
    所述上盖的内径等于埚体的外径，位于所述埚体的开口端；所述下盖的外径小于所述埚体的内径，位于所述埚体的内部；
    所述上盖具有上开口区域，在该上开口区域内设有数个上出气孔，所述下盖具有下开口区域，在该下开口区域内设有数个下出气孔，所述数个上出气孔与数个下出气孔不重合；
    其中，所述连接部分别连接于上盖与下盖的中心处；所述上盖与下盖沿埚体的轴向间隔距离为埚体高度的1％～10％；
    其中，所述数个下出气孔的总面积大于所述数个上出气孔的总面积；
    其中，所述上盖上表面的高度低于设于所述埚体外围的加热源的高度5mm～20mm；
    其中，所述上出气孔具有倒角，倒角的角度为30°～60°。
  12. 如权利要求11所述的防止蒸镀材料喷溅及塞孔的坩埚，其中，所述数个上出气孔关于所述上盖的中心呈中心对称分布，所述数个下出气孔关于所述下盖的中心呈中心对称分布。
  13. 如权利要求11所述的防止蒸镀材料喷溅及塞孔的坩埚，其中，所述数个上出气孔的总面积占上开口区域的20％～80％；所述数个下出气孔的总面积占下开口区域的30％～90％。
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