WO2017161624A1 - 蒸镀坩埚 - Google Patents
蒸镀坩埚 Download PDFInfo
- Publication number
- WO2017161624A1 WO2017161624A1 PCT/CN2016/080105 CN2016080105W WO2017161624A1 WO 2017161624 A1 WO2017161624 A1 WO 2017161624A1 CN 2016080105 W CN2016080105 W CN 2016080105W WO 2017161624 A1 WO2017161624 A1 WO 2017161624A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crucible
- side wall
- vapor deposition
- height
- heat conducting
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
Definitions
- the present invention relates to the field of display technology, and in particular, to an evaporation crucible.
- OLED is a promising flat panel display technology, which has excellent display performance, especially self-illumination, simple structure, ultra-thin, fast response, wide viewing angle, low power consumption and flexible display.
- OLED has been on the eve of mass production. With the further development of research and the emergence of new technologies, OLED display devices will have a breakthrough development.
- An object of the present invention is to provide a vapor deposition crucible which can improve the contact area between the vapor deposition material and the crucible body, so that the evaporation material is uniformly heated and the vapor deposition rate is stable, thereby improving the vapor deposition effect.
- the present invention provides an evaporation crucible comprising a crucible bottom and a side wall connected to the crucible bottom, the side wall and the crucible bottom enclosing a hollow chamber, the hollow chamber including a plurality of blind holes communicating and extending in a direction consistent with an extending direction of the sidewall, the inner surface of the sidewall comprising a plurality of first curved surfaces recessed toward the interior of the sidewall, the plurality of first curved surfaces Each is a part of the wall of the plurality of blind holes.
- the vapor deposition crucible further includes a chamber located in the hollow chamber and a bottom end portion a heat conducting column connected to the bottom of the crucible, the side surface of the heat conducting column is surrounded by a plurality of second curved surfaces recessed inside the heating column, and the plurality of second curved surfaces are respectively the plurality of blinds
- a portion of the aperture wall of the aperture, ie, respectively, is located on the same blind aperture as the plurality of first curved surfaces; the height of the thermally conductive post does not exceed two-thirds of the height of the sidewall.
- the evaporating crucible is obtained by mechanically removing a material from a metal bar.
- the present invention also provides another vapor deposition crucible comprising a bottom, a side wall connected to the bottom of the crucible, and a hollow chamber surrounded by the side wall and the bottom of the crucible and the bottom end is connected to the bottom of the crucible Thermal column.
- the height of the heat conducting column does not exceed two thirds of the height of the side wall; the side wall is cylindrical, and the heat conducting column is cylindrical and located at the axial center of the side wall.
- the evaporating crucible is obtained by mechanically removing a material from a metal bar.
- the present invention also provides another vapor deposition crucible comprising a bottom, a side wall connected to the bottom of the crucible, and a hollow chamber surrounded by the side wall and the bottom of the crucible, and the bottom end is connected to the bottom of the crucible Several discrete thermal pads.
- the side wall is cylindrical, and the plurality of heat conducting sheets are a plurality of arc-shaped heat conducting sheets located on a cylinder concentric with the side wall; the height of the heat conducting sheet does not exceed the side wall Two-thirds of the height.
- the side wall is cylindrical, the plurality of heat conducting sheets are flat, one side of the plurality of heat conducting sheets is connected to an inner surface of the side wall, and the other side is directed to an axis of the side wall
- the core extends; the height of the thermally conductive sheet does not exceed two thirds of the height of the side wall.
- the evaporating crucible is obtained by mechanically removing a material from a metal bar.
- the present invention provides an evaporation crucible obtained by mechanically removing a material from a metal rod, and retaining a portion of the heat transfer structure capable of transferring heat to the middle portion of the crucible during processing of the metal rod, such as by adding
- the inner surface area of the sidewall of the crucible, or a heat conducting structure such as a heat conducting column or a heat conducting sheet is disposed inside the crucible to improve the contact area between the vapor deposition material and the crucible body, so that the evaporation material is uniformly heated and the evaporation rate is stable, thereby improving the evaporation effect.
- FIG. 1 is a schematic view showing heat unevenness of a sublimation type material in a vapor deposition crucible in a vapor deposition process
- 2-3 is a schematic cross-sectional view showing a first embodiment of the vapor deposition crucible of the present invention
- 4-7 is a top plan view showing a first embodiment of the vapor deposition crucible of the present invention.
- Figure 8 is a cross-sectional view showing a second embodiment of the vapor deposition crucible of the present invention.
- Figure 9 is a top plan view showing a second embodiment of the vapor deposition crucible of the present invention.
- Figure 10 is a cross-sectional view showing a third embodiment of the vapor deposition crucible of the present invention.
- Figure 11 is a top plan view showing a third embodiment of the vapor deposition crucible of the present invention.
- Figure 12 is a cross-sectional view showing a fourth embodiment of the vapor deposition crucible of the present invention.
- Figure 13 is a top plan view showing a fourth embodiment of the vapor deposition crucible of the present invention.
- a first embodiment of an evaporating crucible according to the present invention includes a crucible bottom 10 and a side wall 20 connected to the crucible bottom 10, the side wall 20 and the side wall 20
- the dome 10 encloses a hollow chamber comprising a plurality of blind holes 23 communicating in a direction extending in a direction consistent with the direction in which the side walls 20 extend.
- the inner surface of the side wall 20 includes a plurality of directions A first curved surface 21 recessed inside the side wall 20, the plurality of first curved surfaces 21 being a part of the wall of the plurality of blind holes 23, respectively.
- the material of the bottom 10 and the side wall 20 is a metal such as titanium or aluminum.
- the crucible further includes a heat conducting column 30 located in the hollow chamber and having a bottom end connected to the bottom 10, and a side surface of the heat conducting column 30 is recessed by a plurality of second curved surfaces 31 that are recessed inside the heating column 30.
- the plurality of second curved surfaces 31 are respectively part of the wall of the plurality of blind holes 23, that is, respectively located on the same blind hole 23 as the plurality of first curved surfaces 21.
- the height of the heat conducting column 30 does not exceed two thirds of the height of the side wall 20.
- the material of the heat conducting column 30 is a metal such as titanium or aluminum.
- the vapor deposition crucible of the first embodiment is obtained by mechanically removing a material from a metal bar.
- the vapor deposition crucible of the first embodiment of the present invention is obtained by processing a plurality of communicating blind holes 23 in a metal rod, so that the inner surface of the side wall 20 of the vapor-deposited crucible is composed of a plurality of side walls 20
- the first curved surface 21 of the inner recess encloses the surface area of the inner wall of the crucible, thereby increasing the contact area between the crucible body and the evaporation material, so that the material is uniformly heated and the evaporation rate is stable.
- a heat conducting column 30 located inside the side wall 20 can be obtained, because the heat conducting column
- the side surface of the 30 is surrounded by a plurality of second curved surfaces 31 recessed inside the guide column 30, thereby further increasing the contact area between the crucible body and the evaporation material, so that the material is more uniformly heated and the evaporation effect is improved.
- the vapor deposition crucible includes a crucible bottom 10, a side wall 20 connected to the crucible bottom 10, and the side wall 20 and A heat-conducting column 40 surrounded by the bottom 10 and connected to the bottom 10 at the bottom end.
- the height of the heat conducting column 40 does not exceed two thirds of the height of the side wall 20.
- the sidewall 20 is cylindrical
- the heat conducting column 40 is cylindrical and located at the axial center of the sidewall 20 .
- the material of the dome 10, the sidewall 20, and the heat conducting column 40 is a metal such as titanium or aluminum.
- the vapor deposition crucible of the second embodiment is obtained by mechanically removing a material from a metal bar.
- the vapor deposition crucible of the second embodiment of the present invention is obtained by excavating a circular cylinder in a metal rod.
- the present invention can increase the crucible body and steam by providing a heat conducting column 40 inside the vapor deposition crucible.
- the contact area of the plating material is such that the material is heated uniformly, and since the heat conducting column 40 is located at the center of the inside of the crucible, the center of the vapor deposition material can be heated, thereby improving the uniformity of heat of each part of the vapor deposition material, and steaming can be performed.
- the plating rate is stable and the evaporation effect is improved.
- the vapor deposition crucible includes a crucible bottom 10, a side wall 20 connected to the crucible bottom 10, and the side wall 20 and a plurality of discontinuous thermally conductive sheets 50 surrounded by the bottom 10 and having a bottom end portion connected to the bottom 10;
- the side wall 20 is cylindrical, and the plurality of heat conducting sheets 50 are a plurality of cylinders located on a cylinder concentric with the side wall 20. Curved heat transfer sheet.
- the height of the heat conducting sheet 50 does not exceed two thirds of the height of the side wall 20.
- the material of the bottom 10, the side wall 20, and the heat conductive sheet 50 is a metal such as titanium or aluminum.
- the vapor deposition crucible of the third embodiment is obtained by mechanically removing a material from a metal bar.
- the vapor deposition crucible of the third embodiment of the present invention is: firstly, a circular cylinder and a cylinder at the center of the cylinder are dug in a metal rod, thereby obtaining a cylindrical sidewall 20 and located a cylinder inside the side wall 20, and then processing a plurality of vertical slits on the cylinder, thereby obtaining a plurality of discontinuous arc-shaped heat conductive sheets 50.
- the present invention provides a plurality of heat conducting sheets in the interior of the vapor deposition crucible.
- the contact area between the body of the crucible and the evaporation material can be increased, so that the evaporation material is uniformly heated, so that the evaporation rate is stable, the evaporation effect is improved, and a gap is provided between the plurality of thermal conductive sheets 50, so that the crucible can be made
- the internal vapor deposition material is connected to further enhance the heat transfer effect inside the material and improve the heat uniformity of the material.
- the vapor deposition crucible includes a crucible bottom 10, a sidewall 20 connected to the crucible bottom 10, and the sidewall 20 a plurality of discontinuous thermally conductive sheets 50' connected to the bottom of the hollow chamber and having a bottom end portion connected to the bottom 10;
- the side wall 20 is cylindrical, the plurality of heat conducting sheets 50' are flat, and one side of the plurality of heat conducting sheets 50' The inner surfaces of the side walls 20 are connected, and the other side extends toward the axis of the side walls 20.
- the height of the heat conducting sheet 50' does not exceed two thirds of the height of the side wall 20.
- the material of the dome 10, the side wall 20, and the heat conductive sheet 50' is a metal such as titanium or aluminum.
- the vapor deposition crucible of the fourth embodiment is obtained by mechanically removing a material from a metal bar.
- the vapor deposition crucible of the fourth embodiment of the present invention is obtained by excavating a plurality of irregular cylinders in a metal rod.
- the present invention provides a plurality of heat conduction extending inside the crucible on the side wall 20 of the vapor deposition crucible.
- the sheet 50' can increase the contact area between the crucible body and the evaporation material, so that the evaporation material is heated uniformly, thereby making the evaporation rate smooth and improving the evaporation effect; and at the same time, the gap between the plurality of thermal conductive sheets 50' is provided.
- the vapor deposition material inside the crucible can be connected to further enhance the heat transfer effect inside the material and improve the heat uniformity of the material.
- the present invention provides an evaporating crucible obtained by mechanically processing a metal rod to remove a material.
- a portion of the heat-conducting structure capable of transferring heat to the middle portion of the crucible is retained, for example, by adding germanium.
- the internal surface area of the side wall, or a heat conducting column inside the crucible or A heat conducting structure such as a heat conductive sheet is used to increase the contact area between the vapor deposition material and the crucible body, so that the vapor deposition material is uniformly heated and the vapor deposition rate is stable, thereby improving the vapor deposition effect.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
一种蒸镀坩埚，包括坩埚底（10）以及与坩埚底（10）相连的侧壁（20），侧壁（20）与坩埚底（10）围成一中空腔室，中空腔室包括数个相连通且延伸方向与侧壁（20）的延伸方向一致的盲孔（23），侧壁（20）的内表面包括数个向侧壁（20）内部凹陷的第一弧形表面（21），数个第一弧形表面（21）分别为数个盲孔（23）的孔壁的一部分；或者包括坩埚底（10）、与坩埚底（10）相连的侧壁（20）、以及位于侧壁（20）与坩埚底（10）围成的中空腔室内且底端部与坩埚底（10）相连的导热柱（40）；或者包括坩埚底（10）、与坩埚底相连的侧壁（20）、以及位于侧壁（20）与坩埚底（10）围成的中空腔室内且底端部与坩埚底（10）相连的数个不连续的导热片(50，50')。
Description
本发明涉及显示技术领域，尤其涉及一种蒸镀坩埚。
OLED是一种极具发展前景的平板显示技术，它具有十分优异的显示性能，特别是自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性，被誉为“梦幻显示器”，再加上其生产设备投资远小于TFT-LCD，得到了各大显示器厂家的青睐，已成为显示技术领域中第三代显示器件的主力军。目前OLED已处于大规模量产的前夜，随着研究的进一步深入，新技术的不断涌现，OLED显示器件必将有一个突破性的发展。
OLED有机材料的薄膜制备有两种工艺路线。对于高分子OLED材料，采用溶液成膜方式，这种工艺目前还处于试验研究阶段。对于小分子OLED材料，目前普遍采用真空热蒸镀的成膜方式，这种工艺路线被平板显示行业的大多数工厂采用，比如三星、LG等。真空热蒸镀技术是在低于5×10-5Pa的真空环境下，通过加热的方式将材料由固态变为蒸气状态，高速运动的气态分子到达玻璃基板并在基板上沉积固化，再变回为OLED材料的固体薄膜。对于熔融型材料，其受热后，会由固态变为液态，最后变为气态分子，这类型材料对于坩埚内部的形状并没有太高的要求，因为液态物质会到处流动，可以保持与坩埚内壁的充分接触。而对于升华型材料，其受热后，会直接由固态转化为气态分子。由于固态物质缺乏流动性，所以在材料受热升华的过程中极有可能发生如图1所示的情况。从图1中可以看出，材料100受热后，与坩埚内壁200接触的材料100升华，变成气态分子跑掉，剩下的固态物质无法流动，从而剩余材料100无法与坩埚内壁200充分接触，导致升华的速率不稳。如果设备运行在速率固定模式下，为保持升华速率，设备会不断加热以提高温度，这样极有可能超过材料100的裂解温度，导致材料变质。
发明内容
本发明的目的在于提供一种蒸镀坩埚，可提高蒸镀材料与坩埚本体的接触面积，使得蒸镀材料受热均匀，蒸镀速率平稳，从而提高蒸镀效果。
为实现上述目的，本发明提供一种蒸镀坩埚，包括坩埚底以及与所述坩埚底相连的侧壁，所述侧壁与所述坩埚底围成一中空腔室，所述中空腔室包括数个相连通且延伸方向与所述侧壁的延伸方向一致的盲孔，所述侧壁的内表面包括数个向侧壁内部凹陷的第一弧形表面，该数个第一弧形表面分别为所述数个盲孔的孔壁的一部分。
当所述中空腔室由至少3个盲孔组成，即所述侧壁的内表面包括至少3个第一弧形表面时，所述蒸镀坩埚还包括位于所述中空腔室内且底端部与所述坩埚底相连的一导热柱，所述导热柱的侧表面由数个向导热柱内部凹陷的第二弧形表面围成，该数个第二弧形表面分别为所述数个盲孔的孔壁的一部分，即分别与所述数个第一弧形表面位于相同的盲孔上；所述导热柱的高度不超过所述侧壁的高度的三分之二。
所述蒸镀坩埚由一金属棒经机械加工去除材料得到。
本发明还提供另一种蒸镀坩埚，包括坩埚底、与所述坩埚底相连的侧壁、以及位于所述侧壁与坩埚底围成的中空腔室内且底端部与所述坩埚底相连的导热柱。
所述导热柱的高度不超过所述侧壁的高度的三分之二；所述侧壁为圆筒形，所述导热柱为圆柱形，且位于所述侧壁的轴心位置。
所述蒸镀坩埚由一金属棒经机械加工去除材料得到。
本发明还提供又一种蒸镀坩埚，包括坩埚底、与所述坩埚底相连的侧壁、以及位于所述侧壁与坩埚底围成的中空腔室内且底端部与所述坩埚底相连的数个不连续的导热片。
所述侧壁为圆筒形，所述数个导热片为位于与所述侧壁同轴心的一圆筒上的数个弧形导热片；所述导热片的高度不超过所述侧壁的高度的三分之二。
所述侧壁为圆筒形，所述数个导热片呈平直状，所述数个导热片的一侧与所述侧壁的内表面相连接，另一侧向所述侧壁的轴心延伸；所述导热片的高度不超过所述侧壁的高度的三分之二。
所述蒸镀坩埚由一金属棒经机械加工去除材料得到。
本发明的有益效果：本发明提供的一种蒸镀坩埚，由一金属棒经机械加工去除材料得到，在对金属棒加工过程中，保留一部分能够向坩埚中部传热的导热结构，如通过增加坩埚侧壁的内表面积，或者在坩埚内部设置导热柱或导热片等导热结构，来提高蒸镀材料与坩埚本体的接触面积，使得蒸镀材料受热均匀，蒸镀速率平稳，从而提高蒸镀效果。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本
发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的蒸镀坩埚中升华型材料在蒸镀过程中受热不均匀的示意图；
图2-3为本发明的蒸镀坩埚的第一实施例的剖视示意图；
图4-7为本发明的蒸镀坩埚的第一实施例的俯视示意图；
图8为本发明的蒸镀坩埚的第二实施例的剖视示意图；
图9为本发明的蒸镀坩埚的第二实施例的俯视示意图；
图10为本发明的蒸镀坩埚的第三实施例的剖视示意图；
图11为本发明的蒸镀坩埚的第三实施例的俯视示意图；
图12为本发明的蒸镀坩埚的第四实施例的剖视示意图；
图13为本发明的蒸镀坩埚的第四实施例的俯视示意图。
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2-7，为本发明的蒸镀坩埚的第一实施例，所述蒸镀坩埚包括坩埚底10以及与所述坩埚底10相连的侧壁20，所述侧壁20与所述坩埚底10围成一中空腔室，所述中空腔室包括数个相连通且延伸方向与所述侧壁20的延伸方向一致的盲孔23，所述侧壁20的内表面包括数个向侧壁20内部凹陷的第一弧形表面21，该数个第一弧形表面21分别为所述数个盲孔23的孔壁的一部分。
具体的，所述坩埚底10与侧壁20的材料为金属，如钛、或铝等。
请参阅图3及图5-7，当所述中空腔室由至少3个盲孔23组成，即所述侧壁20的内表面包括至少3个第一弧形表面21时，所述蒸镀坩埚还包括位于所述中空腔室内且底端部与所述坩埚底10相连的一导热柱30，所述导热柱30的侧表面由数个向导热柱30内部凹陷的第二弧形表面31围成，该数个第二弧形表面31分别为所述数个盲孔23的孔壁的一部分，即分别与所述数个第一弧形表面21位于相同的盲孔23上。
具体的，所述导热柱30的高度不超过所述侧壁20的高度的三分之二。
具体的，所述导热柱30的材料为金属，如钛、或铝等。
具体的，该第一实施例的蒸镀坩埚由一金属棒经机械加工去除材料得到。
本发明的第一实施例的蒸镀坩埚，通过在一金属棒内加工数个相连通的盲孔23后得到，从而使得该蒸镀坩埚的侧壁20的内表面由数个向侧壁20内部凹陷的第一弧形表面21围成，增大了坩埚内壁的表面积，进而增大了坩埚本体与蒸镀材料的接触面积，使得材料受热均匀，蒸镀速率平稳。进一步的，当在所述柱体内加工3个以上相连通的盲孔23时，通过调整所述数个盲孔23的位置，可得到位于侧壁20内部的一导热柱30，由于该导热柱30的侧表面由数个向导热柱30内部凹陷的第二弧形表面31围成，从而进一步增大了坩埚本体与蒸镀材料的接触面积，使材料受热更均匀，提高蒸镀效果。
请参阅图8-9，为本发明的蒸镀坩埚的第二实施例，所述蒸镀坩埚包括坩埚底10、与所述坩埚底10相连的侧壁20、以及位于所述侧壁20与坩埚底10围成的中空腔室内且底端部与所述坩埚底10相连的导热柱40。
具体的，所述导热柱40的高度不超过所述侧壁20的高度的三分之二。
具体的，所述侧壁20为圆筒形，所述导热柱40为圆柱形，且位于所述侧壁20的轴心位置。
具体的，所述坩埚底10、侧壁20、及导热柱40的材料为金属，如钛、或铝等。
具体的，该第二实施例的蒸镀坩埚由一金属棒经机械加工去除材料得到。
本发明的第二实施例的蒸镀坩埚，通过在一金属棒内挖取一圆环柱体后得到，本发明通过在蒸镀坩埚的内部设置一导热柱40，可增大坩埚本体与蒸镀材料的接触面积，使得材料受热均匀，并且由于所述导热柱40位于所述坩埚内部的中央，从而可以蒸镀材料的中心受热，提升了蒸镀材料各部分受热的均匀性，可以使蒸镀速率平稳，提高蒸镀效果。
请参阅图10-11，为本发明的蒸镀坩埚的第三实施例，所述蒸镀坩埚包括坩埚底10、与所述坩埚底10相连的侧壁20、以及位于所述侧壁20与坩埚底10围成的中空腔室内且底端部与所述坩埚底10相连的数个不连续的导热片50；
在图10-11所示的第三实施例中，所述侧壁20为圆筒形，所述数个导热片50为位于与所述侧壁20同轴心的一圆筒上的数个弧形导热片。
具体的，所述导热片50的高度不超过所述侧壁20的高度的三分之二。
具体的，所述坩埚底10、侧壁20、及导热片50的材料为金属，如钛、或铝等。
具体的，该第三实施例的蒸镀坩埚由一金属棒经机械加工去除材料得到。
本发明的第三实施例的蒸镀坩埚的制作方法为：首先在一金属棒内挖取一圆环柱体以及位于柱体中心的一圆柱体，从而得到圆筒形的侧壁20以及位于侧壁20内部的一圆筒，然后在该圆筒上加工数个竖直缝隙，从而得到数个不连续的弧形的导热片50，本发明通过在蒸镀坩埚的内部设置数个导热片50，可增大坩埚本体与蒸镀材料的接触面积，使得蒸镀材料受热均匀，从而使蒸镀速率平稳，提高蒸镀效果，同时该数个导热片50之间设有间隙，可以使坩埚内部的蒸镀材料连通，进一步增强材料内部的传热效果，提高材料的受热均匀度。
请参阅图12-13，为本发明的蒸镀坩埚的第四实施例，所述蒸镀坩埚包括坩埚底10、与所述坩埚底10相连的侧壁20、以及位于所述侧壁20与坩埚底10围成的中空腔室内且底端部与所述坩埚底10相连的数个不连续的导热片50’；
在图12-13所示的第四实施例中，所述侧壁20为圆筒形，所述数个导热片50’呈平直状，所述数个导热片50’的一侧与所述侧壁20的内表面相连接，另一侧向所述侧壁20的轴心延伸。
具体的，所述导热片50’的高度不超过所述侧壁20的高度的三分之二。
具体的，所述坩埚底10、侧壁20、及导热片50’的材料为金属，如钛、或铝等。
具体的，该第四实施例的蒸镀坩埚由一金属棒经机械加工去除材料得到。
本发明的第四实施例的蒸镀坩埚，通过在一金属棒中挖取数个不规则柱体后得到，本发明通过在蒸镀坩埚的侧壁20上设置数个向坩埚内部延伸的导热片50’，可增大坩埚本体与蒸镀材料的接触面积，使得蒸镀材料受热均匀，从而使蒸镀速率平稳，提高蒸镀效果；同时该数个导热片50’之间设有间隙，可以使坩埚内部的蒸镀材料连通，进一步增强材料内部的传热效果，提高材料的受热均匀度。
综上所述，本发明提供的一种蒸镀坩埚，由一金属棒经机械加工去除材料得到，在对金属棒加工过程中，保留一部分能够向坩埚中部传热的导热结构，如通过增加坩埚侧壁的内表面积，或者在坩埚内部设置导热柱或
导热片等导热结构，来提高蒸镀材料与坩埚本体的接触面积，使得蒸镀材料受热均匀，蒸镀速率平稳，从而提高蒸镀效果。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (10)
- 一种蒸镀坩埚，包括坩埚底以及与所述坩埚底相连的侧壁，所述侧壁与所述坩埚底围成一中空腔室，所述中空腔室包括数个相连通且延伸方向与所述侧壁的延伸方向一致的盲孔，所述侧壁的内表面包括数个向侧壁内部凹陷的第一弧形表面，该数个第一弧形表面分别为所述数个盲孔的孔壁的一部分。
- 如权利要求1所述的蒸镀坩埚，其中，当所述中空腔室由至少3个盲孔组成，即所述侧壁的内表面包括至少3个第一弧形表面时，所述蒸镀坩埚还包括位于所述中空腔室内且底端部与所述坩埚底相连的一导热柱，所述导热柱的侧表面由数个向导热柱内部凹陷的第二弧形表面围成，该数个第二弧形表面分别为所述数个盲孔的孔壁的一部分，即分别与所述数个第一弧形表面位于相同的盲孔上；所述导热柱的高度不超过所述侧壁的高度的三分之二。
- 如权利要求1所述的蒸镀坩埚，由一金属棒经机械加工去除材料得到。
- 一种蒸镀坩埚，包括坩埚底、与所述坩埚底相连的侧壁、以及位于所述侧壁与坩埚底围成的中空腔室内且底端部与所述坩埚底相连的导热柱。
- 如权利要求4所述的蒸镀坩埚，其中，所述导热柱的高度不超过所述侧壁的高度的三分之二；所述侧壁为圆筒形，所述导热柱为圆柱形，且位于所述侧壁的轴心位置。
- 如权利要求4所述的蒸镀坩埚，由一金属棒经机械加工去除材料得到。
- 一种蒸镀坩埚，包括坩埚底、与所述坩埚底相连的侧壁、以及位于所述侧壁与坩埚底围成的中空腔室内且底端部与所述坩埚底相连的数个不连续的导热片(50/50’)。
- 如权利要求7所述的蒸镀坩埚，其中，所述侧壁为圆筒形，所述数个导热片为位于与所述侧壁同轴心的一圆筒上的数个弧形导热片；所述导热片的高度不超过所述侧壁的高度的三分之二。
- 如权利要求7所述的蒸镀坩埚，其中，所述侧壁为圆筒形，所述数个导热片呈平直状，所述数个导热片的一侧与所述侧壁的内表面相连接，另一侧向所述侧壁的轴心延伸；所述导热片的高度不超过所述侧壁的高度 的三分之二。
- 如权利要求7所述的蒸镀坩埚，由一金属棒经机械加工去除材料得到。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/112,426 US20180105924A1 (en) | 2016-03-21 | 2016-04-25 | Vapor Deposition Crucible |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610161257.4A CN105648404B (zh) | 2016-03-21 | 2016-03-21 | 蒸镀坩埚 |
| CN201610161257.4 | 2016-03-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2017161624A1 true WO2017161624A1 (zh) | 2017-09-28 |
Family
ID=56494143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2016/080105 WO2017161624A1 (zh) | 2016-03-21 | 2016-04-25 | 蒸镀坩埚 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20180105924A1 (zh) |
| CN (1) | CN105648404B (zh) |
| WO (1) | WO2017161624A1 (zh) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107142454B (zh) * | 2017-07-19 | 2020-03-13 | 京东方科技集团股份有限公司 | 蒸镀坩埚和蒸镀装置 |
| CN107513689A (zh) * | 2017-10-11 | 2017-12-26 | 新乡市百合光电有限公司 | 一种镜头保护片上的油膜蒸镀装置 |
| JP7018816B2 (ja) * | 2018-04-26 | 2022-02-14 | 昭和電工株式会社 | 坩堝及びＳｉＣ単結晶成長装置 |
| WO2019223853A1 (en) * | 2018-05-22 | 2019-11-28 | Applied Materials, Inc. | Evaporation source, method for operating an evaporation source and deposition system |
| CN110359014A (zh) * | 2019-06-11 | 2019-10-22 | 惠科股份有限公司 | 一种蒸镀设备和坩埚装置 |
| JP7358944B2 (ja) * | 2019-11-27 | 2023-10-12 | 株式会社レゾナック | ＳｉＣ単結晶成長用伝熱部材、ＳｉＣ単結晶成長用坩堝、ＳｉＣ単結晶の製造方法 |
| TW202200810A (zh) * | 2020-06-18 | 2022-01-01 | 矽碁科技股份有限公司 | 具有導熱元件的加熱裝置及其適用之蒸鍍設備 |
| CN114635107A (zh) * | 2020-12-16 | 2022-06-17 | 合肥欣奕华智能机器股份有限公司 | 一种用于线性蒸发源中的坩埚及线性蒸发源 |
| CN113683290B (zh) * | 2021-08-20 | 2022-07-12 | 西安交通大学 | 一种玻璃纤维窑炉结构 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6369967A (ja) * | 1986-09-11 | 1988-03-30 | Sumitomo Electric Ind Ltd | 蒸着膜形成装置 |
| JPH0558774A (ja) * | 1991-09-03 | 1993-03-09 | Sanyo Electric Co Ltd | 炭化ケイ素単結晶成長装置用容器 |
| JP2005163090A (ja) * | 2003-12-01 | 2005-06-23 | Semiconductor Energy Lab Co Ltd | 蒸着用るつぼ及び蒸着装置 |
| CN104694883A (zh) * | 2015-03-27 | 2015-06-10 | 京东方科技集团股份有限公司 | 一种坩埚 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04228562A (ja) * | 1990-12-27 | 1992-08-18 | Mitsubishi Electric Corp | 薄膜形成装置 |
| JP3736928B2 (ja) * | 1997-03-11 | 2006-01-18 | 株式会社アルバック | 有機化合物容器、有機蒸発源、及び真空蒸着装置 |
| KR100809930B1 (ko) * | 2006-12-01 | 2008-03-06 | 엘지.필립스 엘시디 주식회사 | 증착원 |
| CN104831237B (zh) * | 2015-05-25 | 2017-02-22 | 京东方科技集团股份有限公司 | 一种蒸镀装置和蒸镀系统 |
-
2016
- 2016-03-21 CN CN201610161257.4A patent/CN105648404B/zh active Active
- 2016-04-25 US US15/112,426 patent/US20180105924A1/en not_active Abandoned
- 2016-04-25 WO PCT/CN2016/080105 patent/WO2017161624A1/zh active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6369967A (ja) * | 1986-09-11 | 1988-03-30 | Sumitomo Electric Ind Ltd | 蒸着膜形成装置 |
| JPH0558774A (ja) * | 1991-09-03 | 1993-03-09 | Sanyo Electric Co Ltd | 炭化ケイ素単結晶成長装置用容器 |
| JP2005163090A (ja) * | 2003-12-01 | 2005-06-23 | Semiconductor Energy Lab Co Ltd | 蒸着用るつぼ及び蒸着装置 |
| CN104694883A (zh) * | 2015-03-27 | 2015-06-10 | 京东方科技集团股份有限公司 | 一种坩埚 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20180105924A1 (en) | 2018-04-19 |
| CN105648404A (zh) | 2016-06-08 |
| CN105648404B (zh) | 2018-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2017161624A1 (zh) | 蒸镀坩埚 | |
| WO2016065767A1 (zh) | 用于升华型oled材料蒸镀的坩埚 | |
| CN201751427U (zh) | 一种线性蒸发源 | |
| JP5838234B2 (ja) | 蒸発源アセンブリ | |
| KR20070080635A (ko) | 유기물증발 보트 | |
| US20150159263A1 (en) | Evaporation device | |
| WO2016011687A1 (zh) | 用于oled材料蒸镀的加热装置 | |
| WO2015024280A1 (zh) | 一种镀膜机坩埚 | |
| WO2016101397A1 (zh) | 防止蒸镀材料喷溅及塞孔的坩埚 | |
| WO2015131504A1 (zh) | 一种坩埚 | |
| CN104233196A (zh) | 蒸镀坩埚和蒸镀装置 | |
| WO2016011779A1 (zh) | 蒸发镀膜装置 | |
| WO2015013987A1 (zh) | 具有导热装置的坩埚 | |
| TWM594329U (zh) | 均溫板、散熱模組和半導體器件 | |
| WO2017156827A1 (zh) | 导热装置与蒸镀坩埚 | |
| KR100434438B1 (ko) | 증착 공정용 원추형 노즐 증발원 | |
| WO2020113676A1 (zh) | 蒸镀坩埚 | |
| CN104694883A (zh) | 一种坩埚 | |
| US20160230272A1 (en) | Evaporation source heating device | |
| CN208923079U (zh) | 静电卡盘及反应腔室 | |
| KR100467535B1 (ko) | 선형 증발원과 이를 이용한 증착장치 | |
| KR20080062310A (ko) | 유기발광표시장치 제조용 도가니 | |
| CN110359014A (zh) | 一种蒸镀设备和坩埚装置 | |
| CN207933519U (zh) | 一种坩埚 | |
| TWI425105B (zh) | 蒸鍍裝置以及蒸鍍機台 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WWE | Wipo information: entry into national phase |
Ref document number: 15112426 Country of ref document: US |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16894977 Country of ref document: EP Kind code of ref document: A1 |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 16894977 Country of ref document: EP Kind code of ref document: A1 |