JP7018816B2 - 坩堝及びSiC単結晶成長装置 - Google Patents
坩堝及びSiC単結晶成長装置 Download PDFInfo
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- JP7018816B2 JP7018816B2 JP2018085805A JP2018085805A JP7018816B2 JP 7018816 B2 JP7018816 B2 JP 7018816B2 JP 2018085805 A JP2018085805 A JP 2018085805A JP 2018085805 A JP2018085805 A JP 2018085805A JP 7018816 B2 JP7018816 B2 JP 7018816B2
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- 239000013078 crystal Substances 0.000 title claims description 58
- 238000010438 heat treatment Methods 0.000 claims description 76
- 239000002994 raw material Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 42
- 229910010271 silicon carbide Inorganic materials 0.000 description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 230000006698 induction Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000005092 sublimation method Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0635—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Description
すなわち、本発明は、上記課題を解決するため、以下の手段を提供する。
図1は、本実施形態にかかるSiC単結晶成長装置の断面模式図である。図1に示すSiC単結晶成長装置100は、坩堝10と、内側加熱手段20と、外側加熱手段30と、を備える。図1では、理解を容易にするために、種結晶Sと原料Gとを同時に図示している。
坩堝10は、昇華法により単結晶を結晶成長させるための坩堝である。坩堝10は、蓋11と容器12とを備える。蓋11は種結晶を設置することができ、容器12は原料Gを保持する。容器12に原料Gを設置し、蓋11に種結晶Sを設置すると、種結晶Sが原料Gに対して対向配置される。原料Gから昇華した原料ガスは、種結晶S上で再結晶化し、単結晶が成長する。
内側加熱手段20は、坩堝10の凹部12aに収容される。内側加熱手段20は、坩堝10の内部から原料Gを加熱する。
外側加熱手段30は、公知の加熱方式を採用できる。例えば、加熱方式として抵抗加熱、誘導加熱等が挙げられる。図1に示す外側加熱手段30は、コイル31と、コイル31から発生する高周波を受けて発熱するヒータ32とを備える。図1に示す外側加熱手段30は、コイル31に電流を流し、ヒータ32を誘導加熱する誘導加熱方式の加熱手段である。
Claims (4)
- 種結晶を設置できる蓋と、原料を入れる容器とを備え、
前記容器の前記蓋と対向する底部に、前記蓋に向かって凹む凹部が形成されており、前記凹部は内側加熱手段を設置できる、坩堝と、
前記坩堝の凹部に設置された内側加熱手段と、
前記坩堝の外側に設置された外側加熱手段と、
前記内側加熱手段を前記坩堝の高さ方向に移動させる移動機構と、を備える、SiC単結晶成長装置。 - 前記凹部は前記底部の平面視中央に位置し、前記凹部の平面視形状が円形である、請求項1に記載のSiC単結晶成長装置。
- 前記凹部は前記底部の平面視中央から同心円状の位置にあり、前記凹部の平面視形状が環状である、請求項1に記載のSiC単結晶成長装置。
- 前記内側加熱手段の加熱方式が抵抗加熱である、請求項1~3のいずれか一項に記載のSiC単結晶成長装置。
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JP2018085805A JP7018816B2 (ja) | 2018-04-26 | 2018-04-26 | 坩堝及びSiC単結晶成長装置 |
CN201910293752.4A CN110408996A (zh) | 2018-04-26 | 2019-04-12 | 坩埚和SiC单晶生长装置 |
US16/391,556 US11643749B2 (en) | 2018-04-26 | 2019-04-23 | Crucible and SiC single crystal growth apparatus |
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JP2018085805A JP7018816B2 (ja) | 2018-04-26 | 2018-04-26 | 坩堝及びSiC単結晶成長装置 |
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JP2019189498A JP2019189498A (ja) | 2019-10-31 |
JP7018816B2 true JP7018816B2 (ja) | 2022-02-14 |
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JP (1) | JP7018816B2 (ja) |
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JP7363412B2 (ja) * | 2019-11-26 | 2023-10-18 | 株式会社レゾナック | 単結晶製造装置 |
DE102020111456B4 (de) * | 2020-04-27 | 2023-11-16 | Ebner Industrieofenbau Gmbh | Vorrichtung und Verfahren zum Erwärmen mehrerer Tiegel |
CN113151895B (zh) * | 2020-06-09 | 2023-02-03 | 北京世纪金光半导体有限公司 | 大直径高纯半绝缘碳化硅生长工艺方法 |
RU2770838C1 (ru) * | 2021-05-04 | 2022-04-22 | Юрий Николаевич Макаров | СПОСОБ ВЫРАЩИВАНИЯ МОНОКРИСТАЛЛОВ КАРБИДА КРЕМНИЯ С ПРОВОДИМОСТЬЮ n-ТИПА |
CN114645318A (zh) * | 2022-03-16 | 2022-06-21 | 齐鲁工业大学 | 一种用于提高物质传输效率的坩埚装置及其应用 |
JP7239772B1 (ja) * | 2022-08-05 | 2023-03-14 | ユニ・チャーム株式会社 | 情報処理装置、情報処理方法及び情報処理プログラム |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007231370A (ja) | 2006-03-01 | 2007-09-13 | Fujifilm Corp | 蒸着容器および蒸着材料蒸発装置。 |
JP2010076991A (ja) | 2008-09-26 | 2010-04-08 | Bridgestone Corp | 炭化珪素単結晶の製造装置及び炭化珪素単結晶の製造方法 |
CN206418222U (zh) | 2016-12-29 | 2017-08-18 | 山东天岳晶体材料有限公司 | 一种无包裹碳化硅晶体生长室 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0558774A (ja) * | 1991-09-03 | 1993-03-09 | Sanyo Electric Co Ltd | 炭化ケイ素単結晶成長装置用容器 |
JPH11268990A (ja) * | 1998-03-20 | 1999-10-05 | Denso Corp | 単結晶の製造方法および製造装置 |
KR100490537B1 (ko) * | 2002-07-23 | 2005-05-17 | 삼성에스디아이 주식회사 | 가열용기와 이를 이용한 증착장치 |
US20040200359A1 (en) * | 2003-04-08 | 2004-10-14 | Snider Ronald B. | Outdoor cooker oven |
KR20080013686A (ko) * | 2006-08-08 | 2008-02-13 | 순천향대학교 산학협력단 | 대면적 기판에 박막을 적층하기 위한 장치 |
DE102011089501B4 (de) * | 2011-12-21 | 2013-10-10 | Freiberger Compound Materials Gmbh | Vorrichtung und Verfahren zum Verdampfen von Material aus einer Metallschmelze |
CN202786404U (zh) * | 2012-08-15 | 2013-03-13 | 日立造船株式会社 | 真空蒸镀装置 |
CN103757590B (zh) * | 2013-12-31 | 2016-04-20 | 深圳市华星光电技术有限公司 | 一种镀膜机坩埚设备 |
CN106929805B (zh) * | 2015-12-31 | 2022-02-25 | 中国建材国际工程集团有限公司 | 容纳并加热材料的坩埚以及包括坩埚和加热器布置的系统 |
CN205474112U (zh) * | 2016-02-02 | 2016-08-17 | 北京华进创威电子有限公司 | 一种碳化硅单晶生长用坩埚结构 |
CN105648404B (zh) * | 2016-03-21 | 2018-11-20 | 深圳市华星光电技术有限公司 | 蒸镀坩埚 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007231370A (ja) | 2006-03-01 | 2007-09-13 | Fujifilm Corp | 蒸着容器および蒸着材料蒸発装置。 |
JP2010076991A (ja) | 2008-09-26 | 2010-04-08 | Bridgestone Corp | 炭化珪素単結晶の製造装置及び炭化珪素単結晶の製造方法 |
CN206418222U (zh) | 2016-12-29 | 2017-08-18 | 山东天岳晶体材料有限公司 | 一种无包裹碳化硅晶体生长室 |
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CN110408996A (zh) | 2019-11-05 |
JP2019189498A (ja) | 2019-10-31 |
US11643749B2 (en) | 2023-05-09 |
US20190330764A1 (en) | 2019-10-31 |
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