WO2017170412A1 - 異方性導電接続構造体 - Google Patents

異方性導電接続構造体 Download PDF

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Publication number
WO2017170412A1
WO2017170412A1 PCT/JP2017/012408 JP2017012408W WO2017170412A1 WO 2017170412 A1 WO2017170412 A1 WO 2017170412A1 JP 2017012408 W JP2017012408 W JP 2017012408W WO 2017170412 A1 WO2017170412 A1 WO 2017170412A1
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WIPO (PCT)
Prior art keywords
electrode terminal
anisotropic conductive
connection structure
conductive particles
protrusion
Prior art date
Application number
PCT/JP2017/012408
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English (en)
French (fr)
Inventor
佐藤　大祐
明史 樋口
Original Assignee
デクセリアルズ株式会社
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Publication date
Application filed by デクセリアルズ株式会社 filed Critical デクセリアルズ株式会社
Priority to KR1020187013065A priority Critical patent/KR102081570B1/ko
Priority to CN201780017937.1A priority patent/CN108780763B/zh
Priority to US16/077,785 priority patent/US10602619B2/en
Publication of WO2017170412A1 publication Critical patent/WO2017170412A1/ja

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
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Definitions

  • the present invention relates to an anisotropic conductive connection structure.
  • a flip chip bonding method As a method for connecting a plurality of electronic components (for example, an IC chip, a rigid substrate, a flexible substrate, etc.) having electrode terminals, a flip chip bonding method is known.
  • electrode terminals are connected in a state where electrode terminals of a plurality of electronic components are opposed to each other.
  • An ultrasonic connection method is known as an example of such a flip chip bonding method.
  • electrode terminals of a plurality of electronic components are brought into contact with each other.
  • the contact portion of the electrode terminal is vibrated by ultrasonic waves.
  • electrode terminals are connected.
  • the electrode terminals of both electronic components are made of gold.
  • a filler (so-called underfill) is filled in the space around the connecting portion and cured.
  • a eutectic method is known as another example of the flip chip bonding method.
  • electrode terminals of a plurality of electronic components are brought into contact with each other.
  • the contact portion of the electrode terminal is heated.
  • the electrode terminals are eutectic and connected.
  • the electrode terminal of one electronic component is made of gold
  • the electrode terminal of the other electronic component is made of tin.
  • a filler is filled in the space around the connecting portion and cured.
  • the electrode terminal vibrates greatly due to the ultrasonic wave, which may cause a connection failure or a short circuit.
  • the electrode terminal to which the ultrasonic connection method can be applied needs to be made of an expensive material such as gold, the cost increases. Further, since filling and curing of the filler are necessary, the cost also increases in this respect. In addition, the man-hour increases.
  • the connecting portion of the electrode terminal is heated, but the heating temperature at this time becomes very high.
  • the heating temperature is about 400 ° C.
  • the flexible substrate may be deformed during heating.
  • the position of the electrode terminal on the flexible substrate may be shifted. Therefore, connection failure, short circuit, etc. may occur.
  • the filler as in the ultrasonic connection method.
  • Patent Documents 1 and 2 a method of anisotropically connecting electrode terminals using an anisotropic conductive film has attracted attention as a flip chip bonding method.
  • this method since no ultrasonic wave is required, there is no problem with ultrasonic waves. Further, even in the connection method using an anisotropic conductive film, a heating process is required, but the heating temperature is lower than that in the eutectic method. Furthermore, since the curable resin constituting the anisotropic conductive film functions as a filler, a process of separately filling and curing the filler becomes unnecessary.
  • the electronic component when the electronic component is an IC chip, bumps are formed as electrode terminals on the IC chip.
  • a protrusion is formed on the peripheral portion of the surface of the bump (ie, the surface facing the electrode terminal of another electronic component).
  • the protrusion is often formed over the entire outer periphery of the surface of the bump.
  • such protrusions have been thought to cause poor connection, and it has been considered preferable to make them as small as possible.
  • the conductive particles when the conductive particles are buried in the recesses (so-called dimples) formed by the protrusions, the conductive particles may not be sufficiently compressed. For this reason, connection failure may occur.
  • the protruding portion is made as small as possible.
  • the technique disclosed in Patent Document 1 in order to reduce the protrusion, the opening area of the opening formed in the insulating layer is extremely reduced.
  • the insulating layer is a layer covering the functional surface of the IC chip, and the opening is formed on the electrode pad of the IC chip.
  • the bump is connected to the electrode pad through the opening of the insulating layer.
  • the protruding portion is reduced by reducing the opening area of such an opening.
  • the process of reducing the opening area is very laborious.
  • the technique disclosed in Patent Document 2 requires a separate process of irradiating the protrusion with ultrasonic waves in order to reduce the protrusion.
  • the present invention has been made in view of the above problems, and an object of the present invention is to reduce the connection resistance of the anisotropic conductive connection portion between the electrode terminals and to improve the reliability. Another object of the present invention is to provide a new and improved anisotropic conductive connection structure capable of increasing the connection strength.
  • a first electrode terminal having a protrusion formed on the surface, a second electrode terminal, a first electrode terminal, and a second electrode terminal And an anisotropic conductive adhesive layer containing conductive particles that are electrically connected to each other, wherein the ratio of the height of the protruding portion to the particle diameter before compression of the conductive particles is less than 60%, and the first electrode terminal
  • An anisotropic conductive connection structure is provided in which the opening area ratio is 55% or more and the height of the second electrode terminal is 6 ⁇ m or more.
  • the projecting portion can capture more conductive particles in the recess in the projecting portion. Furthermore, the conductive particles in the recess are sufficiently compressed. Accordingly, connection resistance is reduced and reliability is improved. Furthermore, since a sufficient amount of adhesive flows between the second electrode terminals, the first electrode terminal and the second electrode terminal are firmly bonded.
  • the ratio of the hardness of the first electrode terminal to the hardness of the second electrode terminal may be larger than 10%.
  • the recessed part enclosed by the protrusion part is formed in the surface of a 1st electrode terminal,
  • the ratio of the particle diameter before compression of the electroconductive particle with respect to the short side length of the recessed part of a 1st electrode terminal is less than 10% It may be.
  • the recessed part enclosed by the protrusion part is formed in the surface of a 1st electrode terminal, and the average occupation area rate of the electroconductive particle which exists in the recessed part of a 1st electrode terminal may be less than 20%. .
  • the protrusion may be formed over the entire outer edge of the surface of the first electrode terminal.
  • the first electrode terminal may be a bump formed on the first electronic component.
  • connection resistance of the anisotropic conductive connection portion between the electrode terminals can be reduced, the reliability can be increased, and the connection strength can be increased.
  • the anisotropic conductive connection structure 10 includes a first electronic component 20, a first electrode terminal 21 formed on the first electronic component 20, a second electronic component 30, and a second electronic component.
  • the second electrode terminal 32 formed on the substrate 30 and the adhesive layer 40 are provided.
  • the first electronic component 20 is, for example, an electronic circuit board.
  • the type of the electronic circuit board is not particularly limited, and may be an IC chip, various rigid boards (for example, a glass epoxy board), a flexible board, or the like.
  • the first electronic component 20 is, for example, an IC chip.
  • the first electrode terminal 21 is a bump.
  • the protrusions 22 are easily formed on the bumps.
  • the first electrode terminal 21 is formed on the first electronic component 20.
  • the first electrode terminal 21 is electrically connected to an electronic circuit that constitutes the first electronic component 20.
  • a protrusion 22 is formed on the surface of the first electrode terminal 21 (that is, the surface facing the second electronic component 30).
  • the first electrode terminal 21 is a bump.
  • the 1st electrode terminal 21 should just be the thing in which the protrusion part 22 was formed. Therefore, the first electrode terminal 21 is not limited to a bump.
  • the material constituting the first electrode terminal 21 is not particularly limited as long as it has conductivity.
  • a material which comprises the 1st electrode terminal 21 it is preferable to comprise with metals, such as aluminum, silver, nickel, copper, and gold
  • the protrusion 22 is formed on the surface of the first electrode terminal 21. As shown in FIG. 2, the protrusion 22 is formed over the entire outer edge of the surface of the first electrode terminal 21. When the first electrode terminal 21 is a bump, the protrusion 22 is often formed over the entire outer edge of the surface of the first electrode terminal 21.
  • the shape of the protrusion 22 is not limited to that shown in FIG. 1, but the shape of FIG. 2 is preferable. In this case, the protrusion 22 can capture the conductive particles 42 more reliably.
  • a concave portion 23 (so-called dimple) surrounded by the protruding portion 22 is formed on the surface of the first electrode terminal 21.
  • the protrusion 22 is actively used.
  • the conductive particles 42 can be held between the first electrode terminal 21 and the second electrode terminal 32 by capturing the conductive particles 42 by the protrusion 22.
  • the conductive particles 42 are included in the adhesive layer 40.
  • the second electronic component 30 is, for example, an electronic circuit board.
  • the type of the electronic circuit board is not particularly limited, and may be an IC chip, various rigid boards (for example, a glass epoxy board), a flexible board, or the like.
  • the second electronic component 30 is a flexible substrate, for example. When the second electronic component 30 is a flexible substrate, the height H2 of the second electrode terminal 32 easily satisfies the requirements described later.
  • the type of the flexible substrate is not particularly limited, and may be a polyimide substrate, for example.
  • the second electrode terminal 31 is formed on the second electronic component 30.
  • the second electrode terminal 31 is electrically connected to an electronic circuit that constitutes the second electronic component 30.
  • the material which comprises the 2nd electrode terminal 31 will not be restrict
  • Examples of the material constituting the second electrode terminal 31 include metals such as aluminum, silver, nickel, copper, and gold.
  • the metal constituting the second electrode terminal 31 may be plated with various metals.
  • the adhesive layer 40 is obtained by curing an anisotropic conductive adhesive, and includes a cured resin layer 41 and conductive particles 42. That is, the adhesive layer 40 performs anisotropic conductive connection between the first electrode terminal 21 and the second electrode terminal 31.
  • the anisotropic conductive adhesive includes a curable resin and conductive particles 42.
  • the curable resin includes a polymerizable compound and a curing initiator.
  • the polymerizable compound is a resin that is cured by a curing initiator.
  • the cured polymerizable compound that is, the cured resin layer 41 adheres the first electrode terminal 21 and the second electrode terminal 31 in the adhesive layer 40 and holds the conductive particles 42 in the adhesive layer 40.
  • Examples of the polymerizable compound include an epoxy polymerizable compound and an acrylic polymerizable compound.
  • the epoxy polymerizable compound is a monomer, oligomer, or prepolymer having one or more epoxy groups in the molecule.
  • epoxy polymerizable compounds various bisphenol type epoxy resins (bisphenol A type, F type, etc.), novolac type epoxy resins, various modified epoxy resins such as rubber and urethane, naphthalene type epoxy resins, biphenyl type epoxy resins, phenol novolac type Examples thereof include epoxy resins, stilbene type epoxy resins, triphenolmethane type epoxy resins, dicyclopentadiene type epoxy resins, triphenylmethane type epoxy resins, and prepolymers thereof.
  • the acrylic polymerizable compound is a monomer, oligomer, or prepolymer having one or more acrylic groups in the molecule.
  • acrylic polymerizable compounds include methyl acrylate, ethyl acrylate, isopropyl acrylate, isobutyl acrylate, epoxy acrylate, ethylene glycol diacrylate, diethylene glycol diacrylate, trimethylol propane triacrylate, dimethylol tricyclodecane diacrylate, and tetramethylene glycol.
  • the curing initiator is, for example, a thermosetting initiator.
  • the thermosetting initiator is a material that is cured together with the polymerizable compound by heat.
  • the kind of thermosetting initiator is not particularly limited.
  • Examples of the thermosetting initiator include a thermal anion or thermal cation curing initiator that cures the epoxy polymerizable compound, and a thermal radical polymerization curing agent that cures the acrylic polymerizable compound.
  • an appropriate thermosetting initiator may be selected depending on the polymerizable compound.
  • a photocuring initiator is mentioned as another example of a curing initiator.
  • photocuring initiator examples include a photoanion or photocationic curing initiator that cures an epoxy polymerizable compound, and a photo radical polymerization curing agent that cures an acrylic polymerizable compound.
  • an appropriate photocuring initiator may be selected depending on the polymerizable compound.
  • the anisotropic conductive adhesive may include a film-forming resin, various additives and the like in addition to the above components.
  • the film-forming resin is added to the anisotropic conductive adhesive when it is desired to form a film in order to make the anisotropic conductive adhesive easy to handle.
  • various resins such as an epoxy resin, a phenoxy resin, a polyester urethane resin, a polyester resin, a polyurethane resin, an acrylic resin, a polyimide resin, and a butyral resin can be used. In the present embodiment, only one of these film-forming resins can be used, or two or more can be used in any combination.
  • film forming resin is a phenoxy resin from a viewpoint of making film forming property and adhesive reliability favorable.
  • the thickness of a film is not particularly limited. However, if the film becomes too thick, the amount of unnecessary resin becomes too large, causing problems with fluidity. Therefore, 100 micrometers or less are preferable and 40 micrometers or less are more preferable. Since handling will become difficult when it becomes too thin, 5 micrometers or more are preferable and 12 micrometers or more are more preferable.
  • additives that can be added to the anisotropic conductive adhesive include silane coupling agents, inorganic fillers, colorants, antioxidants, and rust inhibitors.
  • the kind of silane coupling agent is not particularly limited.
  • examples of the silane coupling agent include epoxy-based, amino-based, mercapto-sulfide-based, and ureido-based silane coupling agents. When these silane coupling agents are added to the anisotropic conductive adhesive, the adhesiveness can be improved depending on the material of the substrate.
  • the inorganic filler is an additive for adjusting the fluidity and film strength of the anisotropic conductive adhesive, particularly the minimum melt viscosity described later.
  • the kind of inorganic filler is not particularly limited. Examples of the inorganic filler include silica, talc, titanium oxide, calcium carbonate, and magnesium oxide.
  • the conductive particle 42 is a material that anisotropically connects the first electrode terminal 21 and the second electrode terminal 31 in the adhesive layer 40. Specifically, the conductive particles 42 sandwiched between the first electrode terminal 21 and the second electrode terminal 31 in the adhesive layer 40 are connected to the first electrode terminal 21 and the second electrode terminal 31. Conduct. On the other hand, other conductive particles 42 (for example, conductive particles 42 that have entered the gap between the first electrode terminals 21, conductive particles 42 that have entered the gap between the second electrode terminals 31, etc.) No conduction between terminals (that is, a short circuit in which the conductive particles 42 are connected between the first electrode terminals 21 and a short circuit in which the conductive particles 42 are connected between the second electrode terminals 31 are not generated). .
  • the conductive particles 42 maintain the insulation between the first electrode terminals 21 and the second electrode terminals 31 in the adhesive layer 40, while maintaining the insulation between the first electrode terminals 21 and the second electrode terminals 31. Can be conducted. That is, the conductive particles 42 are held between the first electrode terminal 21 and the second electrode terminal 31 in the adhesive layer 40, thereby conducting them and making an anisotropic conductive connection.
  • the conductive particles 42 may be dispersed in the anisotropic conductive agent to such an extent that they do not short-circuit, or may be arranged individually. This arrangement is appropriately set depending on the size of each electrode terminal, the distance in the arrangement direction of the electrode terminals, and the like, but may be regular. Moreover, the electroconductive particle 42 satisfy
  • the particle diameter before compression of the conductive particles 42 is not particularly limited as long as the requirements described later are satisfied, but is 1 to 10 ⁇ m as an example.
  • the anisotropic conductive adhesive before anisotropic conductive connection may be formed in advance as a film body.
  • anisotropic conductive connection structure 10 satisfies the following requirements, the protrusion 22 can capture the conductive particles 42. As a result, the connection resistance can be reduced and the reliability is improved. Furthermore, the adhesive layer 40 can firmly bond the first electrode terminal 21 and the second electrode terminal 31.
  • the anisotropic conductive connection structure 10 needs to satisfy at least requirements 1 to 3. It is preferable that the anisotropic conductive connection structure 10 further satisfies the requirement 4 or later.
  • each electrode When evaluating whether or not the following requirements are satisfied, the structure and the like of each electrode can be observed with an SEM (scanning electron microscope) or the like.
  • the height H1 of the protrusion 22 can be measured by observing the first electrode terminal 21 with an SEM.
  • the following parameters may be an arithmetic average value of measured values measured for a plurality of anisotropic conductive connection structures 10, or any one of the values may be used as a representative value.
  • the ratio of the height H1 of the protrusion 22 to the particle diameter before compression of the conductive particles 42 (hereinafter also referred to as “protrusion height / particle diameter ratio”) is less than 60%. Is the particle diameter before compressing the conductive particles 42.
  • the protrusion height / particle diameter ratio is 60% or more, the protrusion 22 inhibits the compression of the conductive particles 42. That is, the conductive particles 42 trapped in the recesses 23 are not sufficiently compressed, resulting in an increase in connection resistance and deterioration in reliability, where the protrusion height / particle diameter ratio is less than 60%.
  • the protrusion 22 can capture the conductive particles 42 in the recess 23. Furthermore, the conductive particles 42 are sufficiently compressed, and the protrusion height / particle diameter ratio is less than 50%. It is preferable.
  • the lower limit of the protrusion height / particle diameter ratio is not particularly limited, but if it is too small, the protrusion 22 may not be able to sufficiently capture the conductive particles 42. Therefore, the protrusion height / particle diameter ratio is preferably 30% or more, more preferably 40% or more, and still more preferably 42% or more.
  • the opening area ratio of the first electrode terminal 21 is 55% or more.
  • the opening area ratio is an area ratio of the opening surface of the recess 23 to the entire area of the surface of the first electrode terminal 21.
  • the opening area ratio is preferably 70% or more.
  • the upper limit value of the opening area ratio is not particularly limited, but if the opening area ratio is too large, the rigidity of the protrusion 22 may be lowered. For this reason, it is preferable that an opening area ratio is 90% or less.
  • the height H2 of the second electrode terminal 31 is 6 ⁇ m or more. As a result, a sufficient amount of adhesive also flows between the second electrode terminals 31, so that the first electrode terminal 21 and the second electrode terminal 31 are firmly bonded. Further, even if the protruding portion 22 of the first electrode terminal 21 contacts the second electrode terminal 31, a sufficient amount of the cured resin layer 41 exists below the first electrode terminal 21. Therefore, the protruding portion 22 and thus the first electrode terminal 21 are sufficiently protected by the cured resin layer 41. As a result, connection resistance is reduced and reliability is improved.
  • the upper limit value of the height H2 is not particularly limited, but is preferably 35 ⁇ m or less.
  • the ratio of the hardness of the first electrode terminal 21 to the hardness of the second electrode terminal 31 is preferably greater than 10%. This is because if the first electrode terminal 21 is too soft than the second electrode terminal 31, the first electrode terminal 21 is greatly deformed during compression (that is, during anisotropic conductive connection). When the amount of deformation is large, the first electrode terminals 21 may come into contact with each other and short-circuit.
  • the hardness of each electrode terminal is, for example, Picker's hardness.
  • the hardness ratio of the electrode terminals is more preferably greater than 15%, and even more preferably greater than 30%.
  • the upper limit of the hardness ratio of the electrode terminals is not particularly limited, but may be about 1 (that is, the hardness of both is substantially the same).
  • the ratio of the particle size before compression of the conductive particles 42 to the short side length of the recesses 23 is preferably less than 10%.
  • the short side length of the concave portion 23 is the short side length of the planar view shape (for example, the shape shown in FIG. 2) of the concave portion 23.
  • the particle diameter / opening short side length ratio is more preferably less than 9%, and further preferably less than 8.5%.
  • the lower limit value of the particle diameter / opening short side length ratio is determined by requirement 1. That is, when the particle diameter / opening short side length ratio is too small, the particle diameter of the conductive particles 42 becomes too small and the requirement 1 is not satisfied.
  • the average occupied area rate of the electroconductive particle 42 which exists in the recessed part 23 is less than 20%.
  • the lower limit of the average occupied area ratio is preferably an occupied area ratio of one or more compressed conductive particles, more preferably an occupied area ratio of two or more compressed conductive particles, and compression. It is even more preferable that the occupied area ratio is equal to or more than three conductive particles.
  • the occupation area of each conductive particle 42 is an area obtained when the compressed conductive particle 42 is projected onto a horizontal plane.
  • the average occupied area ratio can be measured by the following steps.
  • first electrode terminal 21 and the second electrode terminal 21 and the second electrode terminal 21 are removed by peeling the first electrode terminal 21 from the anisotropic conductive connection structure 10 or by polishing the anisotropic conductive connection structure 10 to the connection portion.
  • the connection portion with the electrode terminal 31 is exposed.
  • 50 exposed connection portions are selected.
  • each connection portion is observed in a plane view, and the area occupied by the conductive particles 42 in each connection portion is measured. Observation may be performed with an SEM (scanning electron microscope) or the like. Then, the area occupied by all the conductive particles 42 present in the recesses 23 of each connection portion is measured, and the total area is divided by the area of the opening surface of the recesses 23.
  • the occupation area ratio in each connection part is measured.
  • the average occupied area ratio is measured by arithmetically averaging these occupied area ratios.
  • the anisotropic conductive connection structure preferably further satisfies the following requirements. That is, 30% deformation during compression hardness of the conductive particles 42 (K value) is preferably less than 6000 N / mm 2, more preferably 5500N / mm 2 or less.
  • the compression hardness (K value) at 30% deformation is a kind of parameter that serves as an index of the compression strength of the conductive particles 42.
  • the compression hardness (K value) at the time of 30% deformation is calculated by the following process.
  • F is a load at the time of 30% compression deformation of the conductive particles 42
  • S is a displacement amount (mm) of the conductive particles 42 due to compression
  • R is before compression of the conductive particles 42. Radius (mm).
  • the quality of the anisotropic conductive connection structure 10 can be improved by utilizing the protruding portion 22.
  • the protrusion 22 can capture more conductive particles 42 in the recess 23 in the protrusion 22.
  • the conductive particles in the recess 23 are sufficiently compressed. Accordingly, connection resistance is reduced and reliability is improved.
  • the height H2 of the second electrode terminal 31 is a value within a predetermined range, a sufficient amount of adhesive flows between the second electrode terminals 31. Therefore, the first electrode terminal and the second electrode terminal are firmly bonded.
  • this embodiment is applicable as long as it has an ACF crimping line. Therefore, this embodiment can be easily introduced.
  • Example 1> (1-1. Preparation of first electronic component) An IC chip was prepared as the first electronic component 20. In this IC chip, a plurality of bumps were formed as the first electrode terminals 21. The first electrode terminal 21 has a protrusion 22 having a height H1 1.5 ⁇ m. The bump size (that is, the planar shape of the first electrode terminal 21) was a square shape of 50 ⁇ m ⁇ 50 ⁇ m. The opening area ratio was 73.96%. Therefore, requirement 2 was satisfied. The Picker hardness of the first electrode terminal 21 was 50 Hv.
  • a flexible substrate was prepared as the second electronic component 30.
  • the second electrode terminal 31 was formed by applying Ni / Au plating after Cu etching on a polyimide substrate (CS12-25-00CE manufactured by Nippon Steel Chemical Co., Ltd.) having a thickness of 25 ⁇ m.
  • the flexible substrate was produced by the above process.
  • Ni / Au plating was performed by electrolytic plating.
  • the height H1 of the second electrode terminal 31 was 12 ⁇ m. Therefore, requirement 3 was satisfied.
  • the width of the second electrode terminal 31 was 50 ⁇ m. Therefore, the effective connection area between the first electrode terminal 21 and the second electrode terminal 31 was 1849 ⁇ m 2 .
  • the effective connection area means an area occupied by the second electrode terminal 31 with respect to the opening area of the first electrode terminal 21.
  • the Picker hardness of the second electrode terminal 31 was 150 Hv. Therefore, the hardness ratio of the electrode terminals was 33.3%. Therefore, requirement 4 was satisfied.
  • ACF anisotropic conductive film
  • the conductive particles 42, the number density were formulated into adhesive compositions so as to 3,500,000 pieces / mm 3. Then, an adhesive composition was applied to a separately prepared release-treated PET film having a thickness of 38 ⁇ m with a bar coater and dried to obtain an anisotropic conductive film having a thickness of 40 ⁇ m.
  • Example 1 satisfied the requirements 1 to 5.
  • transformation of the electroconductive particle 42 was 5500 N / mm ⁇ 2 >.
  • the compression hardness at 30% deformation was measured with a micro compression tester manufactured by Shimadzu Corporation.
  • the first electronic component 20, the anisotropic conductive film, and the second electronic component 30 were sequentially laminated.
  • the first electronic component 20 and the second electronic component 30 were aligned so that the positions of the first electrode terminal 21 and the second electrode terminal 31 were aligned.
  • a heat tool was pressed onto the second electronic component 30 via a cushioning material or the like.
  • the 1st electrode terminal 21 and the 2nd electrode terminal 31 were thermocompression-bonded using the heat tool.
  • the anisotropic conductive connection structure 10 was produced through the above steps.
  • the thermocompression bonding conditions were 200 ° C.-10 sec-100 MPa.
  • the first electrode terminal 21 and the second electrode terminal 31 are thermocompression bonded for 10 seconds at a pressure of 100 MPa while raising the temperature of the heattool so that the temperature of the heattool becomes 200 ° C. in 10 seconds from the start of pressure bonding. did.
  • a plurality of anisotropic conductive connection structures 10 were prepared for evaluation to be described later. The configuration of the anisotropic conductive connection structure 10 is summarized in Table 1.
  • the first electrode terminal 21 was peeled off from the anisotropic conductive connection structure 10 to expose the connection portion.
  • the connected portion was observed with an SEM, and the number of conductive particles 42 (that is, the number of trapped particles) present in the recesses 23 and the average occupied area ratio of the conductive particles 42 were measured.
  • the average occupied area ratio was measured by the method described above. That is, 50 connection parts to be measured were observed in a plane view, and the area occupied by the particles, that is, the occupied area was measured. And based on this occupied area, the occupied area rate was calculated.
  • the number of trapped particles of the conductive particles 42 was an arithmetic average value of the number of particles measured for 50 connecting portions. The results are summarized in Table 1.
  • Example 2 In Example 2, the same process as in Example 1 was performed except that the Picker's hardness of the first electrode terminal 21 was 90 Hv. In Example 2, the hardness ratio of the electrode terminals was 60%. Therefore, requirement 4 was also satisfied in Example 2. Table 1 summarizes the configuration and evaluation results of the anisotropic conductive connection structure 10.
  • Example 3 In Example 3, the same processing as in Example 1 was performed except that the Picker hardness of the first electrode terminal 21 was set to 20 Hv. In Example 3, the hardness ratio of the electrode terminals was 13.3%. Therefore, requirement 4 was also satisfied in Example 3. However, since the hardness ratio was 30% or less, a slight deformation of the first electrode terminal 21 was confirmed. Table 1 summarizes the configuration and evaluation results of the anisotropic conductive connection structure 10.
  • Example 4 In Example 4, the same processing as in Example 1 was performed except that the Picker hardness of the second electrode terminal 31 was set to 500 Hv. Specifically, the above picker hardness was obtained by performing plating of the second electrode terminal 31 by electroless plating. In Example 4, the hardness ratio of the electrode terminals was 10%. Therefore, in Example 4, requirement 4 was not satisfied. For this reason, the first electrode terminal 21 was greatly deformed after crimping. However, since the pitch of the first electrode terminals 21 was increased, no short circuit occurred. Table 1 summarizes the configuration and evaluation results of the anisotropic conductive connection structure 10.
  • Example 5> In Example 5, the same process as in Example 1 was performed except that the width of the second electrode terminal 31 was set to 40 ⁇ m. Table 1 summarizes the configuration and evaluation results of the anisotropic conductive connection structure 10.
  • Example 6> In Example 6, the same process as in Example 1 was performed except that the particle size of the conductive particles 42 was set to 3.0 ⁇ m. Table 1 summarizes the configuration and evaluation results of the anisotropic conductive connection structure 10.
  • Example 7> The same processing as in Example 1 was performed except that the width of the second electrode terminal 31 was set to 30 ⁇ m. Table 1 summarizes the configuration and evaluation results of the anisotropic conductive connection structure 10.
  • Example 8> The same processing as in Example 1 was performed except that the width of the second electrode terminal 31 was set to 20 ⁇ m. Table 1 summarizes the configuration and evaluation results of the anisotropic conductive connection structure 10.
  • Example 9> The same processing as in Example 1 was performed except that the height H2 of the second electrode terminal 31 was set to 6 ⁇ m. Table 1 summarizes the configuration and evaluation results of the anisotropic conductive connection structure 10.
  • Comparative Example 1> The same treatment as in Example 1 was performed except that the particle size before compression of the conductive particles 42 was set to 2.5 ⁇ m. Therefore, since the protrusion height / particle diameter ratio is 60%, the requirement 1 is not satisfied.
  • Table 2 summarizes the configuration and evaluation results of the anisotropic conductive connection structure 10.
  • Comparative Example 2 The same processing as in Example 1 was performed except that the opening area ratio of the first electrode terminal 21 was changed to 51.84%. Therefore, in Comparative Example 2, requirement 2 was not satisfied. Table 2 summarizes the configuration and evaluation results of the anisotropic conductive connection structure 10.
  • Comparative Example 3 The same process as in Example 1 was performed except that the height H1 of the protrusion 22 was set to 3.0 ⁇ m. Therefore, in Comparative Example 3, the protrusion height / particle diameter ratio was 85.71%, so requirement 1 was not satisfied.
  • Table 2 summarizes the configuration and evaluation results of the anisotropic conductive connection structure 10.
  • Comparative Example 4 The protrusion 22 was removed from the first electrode terminal 21 by polishing, and the same process as in Example 1 was performed except that the width of the second electrode terminal 31 was 20 ⁇ m. Therefore, in Comparative Example 4, at least requirement 1 was not satisfied.
  • Table 2 summarizes the configuration and evaluation results of the anisotropic conductive connection structure 10.
  • Comparative Example 5 The same processing as in Example 1 was performed except that the second electronic component 30 was a glass substrate. A second electrode terminal 31 made of ITO was formed on the glass substrate, and the height H2 of the second electrode terminal 31 was 1 ⁇ m or less. Therefore, in Comparative Example 5, requirement 3 was not satisfied. Table 2 summarizes the configuration and evaluation results of the anisotropic conductive connection structure 10.
  • Reference Example 1 The protrusion 22 was removed from the first electrode terminal 21 by polishing, and the same processing as in Example 1 was performed except that the width of the second electrode terminal 31 was 40 ⁇ m. Therefore, in Reference Example 1, at least requirement 1 was not satisfied.
  • Table 2 summarizes the configuration and evaluation results of the anisotropic conductive connection structure 10.
  • Reference Example 2 The protrusion 22 was removed from the first electrode terminal 21 by polishing, and the same processing as in Example 1 was performed except that the width of the second electrode terminal 31 was changed to 30 ⁇ m. Therefore, in Reference Example 1, at least requirement 1 was not satisfied.
  • Table 2 summarizes the configuration and evaluation results of the anisotropic conductive connection structure 10.
  • Examples 1 to 3, and 5 to 9 satisfy all the requirements 1 to 6, so that good results were obtained with respect to initial resistance, defect rate, and peel strength.
  • a sufficient number of conductive particles 42 could be captured in the recesses 23 by the protrusions 22. Further, these conductive particles 42 could be sufficiently compressed. For this reason, it is estimated that the favorable result was obtained.
  • Example 3 some deformation was observed in the first electrode terminal 21.
  • the hardness ratio of the electrode terminals is 30% or less. That is, in Example 3, requirement 4 is satisfied, but the value is 30% or less.
  • the hardness ratio of the electrode terminals is 10% or less. Therefore, requirement 4 is not satisfied. Therefore, it was found that requirement 4 is preferably satisfied from the viewpoint of suppressing deformation of the electrode terminal.
  • Comparative Examples 1 to 5 the reliability evaluation was particularly poor. In Comparative Examples 1 to 5, since any one of the requirements 1 to 3 is not satisfied, it is estimated that such a result was obtained. In Reference Examples 1 and 2, the protrusion 22 was not formed. For this reason, the number of trapped particles was smaller than in the Examples. However, an evaluation result almost equal to that of the example was obtained. On the other hand, in Comparative Example 4 in which the protrusions 22 were not formed, the evaluation results were poor. This is because, in Reference Examples 1 and 2, the effective connection area was large. However, in Reference Examples 1 and 2, since the work of removing the protrusions 22 is required separately, it takes time for anisotropic conductive connection. Therefore, it can be said that Examples 1 to 9 are preferable.

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Abstract

【課題】電極端子同士の異方性導電接続部分の接続抵抗を減少し、信頼性を高めることができ、かつ、接続強度を高めることが可能な、新規かつ改良された異方性導電接続構造体を提供する。 【解決手段】上記課題を解決するために、本発明のある観点によれば、表面に突出部が形成された第１の電極端子と、第２の電極端子と、第１の電極端子と第２の電極端子とを導通する導電性粒子を含む異方性導電接着剤層と、を備え、導電性粒子の圧縮前粒子径に対する突出部の高さの比は、６０％未満であり、第１の電極端子の開口面積率は５５％以上であり、第２の電極端子の高さは６μｍ以上である、異方性導電接続構造体が提供される。

Description

異方性導電接続構造体
　本発明は、異方性導電接続構造体に関する。
　電極端子を有する複数の電子部品（例えば、ＩＣチップ、リジッド基板、フレキシブル基板等）同士を接続する方法として、フリップチップボンディング法が知られている。フリップチップボンディング法では、複数の電子部品の電極端子同士を対抗させた状態で、電極端子同士を接続する。
　このようなフリップチップボンディング法の例として、超音波接続法が知られている。この方法では、複数の電子部品の電極端子同士を接触させる。ついで、電極端子の接触部分を超音波により振動させる。これにより、電極端子同士を接続させる。この方法では、両方の電子部品の電極端子を金で構成する。ついで、接続部分の周辺の空間に充填剤（いわゆるアンダーフィル）を充填し、硬化させる。
　また、フリップチップボンディング法の他の例として、共晶法が知られている。この方法では、複数の電子部品の電極端子同士を接触させる。ついで、電極端子の接触部分を加熱する。これにより、電極端子同士が共晶し、接続される。この方法では、例えば、一方の電子部品の電極端子を金で構成し、他方の電子部品の電極端子をスズで構成する。ついで、接続部分の周辺の空間に充填剤（いわゆるアンダーフィル）を充填し、硬化させる。
　しかし、超音波接続法では、超音波により電極端子が大きく振動するので、接続不良やショート等が発生する可能性がある。また、超音波接続法の適用が可能な電極端子は、金等の高価な材料で構成される必要があるため、コストが増大してしまう。また、充填剤の充填、硬化が必要なので、この点でもコストが増大してしまう。また、工数も増大する。
　一方、共晶法では、電極端子の接続部分を加熱するが、この時の加熱温度は非常に高くなる。例えば、加熱温度は４００℃程度となる。このため、電子部品がフレキシブル基板となる場合、加熱時にフレキシブル基板が変形する可能性がある。フレキシブル基板が変形すると、フレキシブル基板上の電極端子の位置等がずれる場合がある。したがって、接続不良、ショート等が発生する可能性がある。さらに、超音波接続法と同様に充填剤に関する問題もある。
　そこで、近年、例えば特許文献１、２に開示されるように、フリップチップボンディング法として、異方性導電フィルムを用いて電極端子同士を異方性導電接続する方法が注目されている。この方法では、超音波が不要となるので、超音波に関する問題は発生しない。また、異方性導電フィルムを用いた接続方法でも、加熱のプロセスは必要になるが、加熱温度は共晶法に比べて低い。さらに、異方性導電フィルムを構成する硬化性樹脂が充填剤として機能するので、別途充填剤を充填、硬化させるプロセスが不要となる。
特開平１１－３１６９８号公報 特開２００５－９３９７８号公報
　ところで、電子部品がＩＣチップとなる場合、ＩＣチップには電極端子としてバンプが形成される。このバンプの表面（すなわち、他の電子部品の電極端子に対向する面）の周縁部分には、突出部が形成されることが多い。さらに、突出部は、バンプの表面の外縁全周にわたって形成されることが多い。従来、このような突出部は、接続不良の原因となると考えられていたことから、なるべく小さくすることが好ましいと考えられていた。具体的には、突出部によって形成される凹部（いわゆるディンプル）内に導電性粒子が埋没した場合に、導電性粒子が十分に圧縮されない可能性があった。このため、接続不良が起こる可能性があった。このため、特許文献１、２に開示された技術では、突出部をなるべく小さくするようにしている。
　しかし、特許文献１、２に開示された技術では、突出部を小さくするために非常に大きな手間がかかっていた。具体的には、特許文献１に開示された技術では、突出部を小さくするために、絶縁層に形成される開口部分の開口面積を非常に小さくする。ここで、絶縁層は、ＩＣチップの機能面を覆う層であり、開口部分は、ＩＣチップの電極パッド上に形成される。そして、バンプは、絶縁層の開口部分を介して電極パッドと接続される。特許文献１に開示された技術では、このような開口部分の開口面積を小さくすることで、突出部を小さくする。しかし、開口面積を小さくする工程は非常に手間がかかる。一方、特許文献２に開示された技術では、突出部を小さくするために、超音波を突出部に照射するという工程が別途必要になる。
　さらに、本発明者が突出部を小さくする技術について検討したところ、単に突出部を小さくしただけでは、かえって接続抵抗の増大や信頼性の低下が起こりうることがわかった。さらに、近年、異方性導電接続部分の接続強度のさらなる向上が強く求められていた。
　そこで、本発明は、上記問題に鑑みてなされたものであり、本発明の目的とするところは、電極端子同士の異方性導電接続部分の接続抵抗を減少し、信頼性を高めることができ、かつ、接続強度を高めることが可能な、新規かつ改良された異方性導電接続構造体を提供することにある。
　上記課題を解決するために、本発明のある観点によれば、表面に突出部が形成された第１の電極端子と、第２の電極端子と、第１の電極端子と第２の電極端子とを導通する導電性粒子を含む異方性導電接着剤層と、を備え、導電性粒子の圧縮前粒子径に対する突出部の高さの比は、６０％未満であり、第１の電極端子の開口面積率は５５％以上であり、第２の電極端子の高さは６μｍ以上である、異方性導電接続構造体が提供される。
　本観点によれば、突出部は、より多くの導電性粒子を突出部内の凹部に捕捉することができる。さらに、凹部内の導電性粒子は十分に圧縮される。したがって、接続抵抗が低減し、信頼性が向上する。さらに、第２の電極端子の間には十分な量の接着剤が流入するので、第１の電極端子と第２の電極端子とが強固に接着される。
　ここで、第２の電極端子の硬度に対する第１の電極端子の硬度の比は１０％より大きくてもよい。
　また、第１の電極端子の表面には、突出部に囲まれた凹部が形成され、第１の電極端子の凹部の短辺長さに対する導電性粒子の圧縮前粒子径の比は１０％未満であってもよい。
　また、第１の電極端子の表面には、突出部に囲まれた凹部が形成され、第１の電極端子の凹部に存在する導電性粒子の平均占有面積率が２０％未満であってもよい。
　また、突出部は、第１の電極端子の表面の外縁全周にわたって形成されていてもよい。
　また、第１の電極端子は、第１の電子部品に形成されるバンプであってもよい。
　以上説明したように本発明によれば、電極端子同士の異方性導電接続部分の接続抵抗を減少し、信頼性を高めることができ、かつ、接続強度を高めることが可能となる。
本実施形態に係る異方性導電接続構造体１０の概略構成を示す側断面図である。 同実施形態に係る第１の電極端子の表面構造を示す平面図である。
　以下に添付図面を参照しながら、本発明の好適な実施の形態について詳細に説明する。なお、本明細書及び図面において、実質的に同一の機能構成を有する構成要素については、同一の符号を付することにより重複説明を省略する。
　＜１．異方性導電接続構造体の構成＞
　まず、図１及び図２に基づいて、本実施形態に係る異方性導電接続構造体１０の構成について説明する。
　異方性導電接続構造体１０は、第１の電子部品２０と、第１の電子部品２０上に形成された第１の電極端子２１と、第２の電子部品３０と、第２の電子部品３０上に形成された第２の電極端子３２と、接着剤層４０とを備える。
　第１の電子部品２０は、例えば電子回路基板である。電子回路基板の種類は特に問われず、ＩＣチップ、各種のリジッド基板（例えば、ガラスエポキシ基板等）、フレキシブル基板などであってもよい。第１の電子部品２０は、例えばＩＣチップとなる。第１の電子部品２０がＩＣチップとなる場合、第１の電極端子２１はバンプとなる。バンプには、突出部２２が形成されやすい。
　第１の電極端子２１は、第１の電子部品２０上に形成されている。また、第１の電極端子２１は、第１の電子部品２０を構成する電子回路と導通されている。第１の電極端子２１の表面（すなわち、第２の電子部品３０に対向する面）には、突出部２２が形成されている。第１の電子部品２０がＩＣチップとなる場合、第１の電極端子２１はバンプとなる。ただし、第１の電極端子２１は、突出部２２が形成されたものであればよい。したがって、第１の電極端子２１はバンプに限定されない。
　第１の電極端子２１を構成する材料は、導電性を有するものであれば特に制限されない。第１の電極端子２１を構成する材料としては、例えば、アルミニウム、銀、ニッケル、銅、および金などの金属で構成されることが好ましい。
　突出部２２は、第１の電極端子２１の表面に形成されている。図２に示すように、突出部２２は、第１の電極端子２１の表面の外縁全周にわたって形成されている。なお、第１の電極端子２１がバンプとなる場合、突出部２２は、第１の電極端子２１の表面の外縁全周にわたって形成されることが多い。もちろん、突出部２２の形状は図１に示されるものに限られないが、図２の形状であることが好ましい。この場合、突出部２２は、導電性粒子４２をより確実に捕捉することができる。
　また、第１の電極端子２１の表面には、突出部２２によって囲まれる凹部２３（いわゆるディンプル）が形成されている。従来では、このような突出部２２及び凹部２３は、接続不良の原因となると考えられていたことから、なるべく小さくすることが好ましいと考えられていた。しかし、本実施形態では、突出部２２を積極的に活用する。具体的には、突出部２２によって導電性粒子４２を捕捉することで、導電性粒子４２を第１の電極端子２１及び第２の電極端子３２の間に保持することができる。ここで、導電性粒子４２は接着剤層４０に含まれるものである。これにより、本実施形態では、接続抵抗を減少し、かつ、信頼性を高めることができる。具体的には、初期抵抗を低減することができ、かつ、冷熱サイクル試験後の不良率を低減することができる。
　第２の電子部品３０は、例えば電子回路基板である。電子回路基板の種類は特に問われず、ＩＣチップ、各種のリジッド基板（例えば、ガラスエポキシ基板等）、フレキシブル基板などであってもよい。第２の電子部品３０は、例えばフレキシブル基板となる。第２の電子部品３０がフレキシブル基板となる場合、第２の電極端子３２の高さＨ２は後述する要件を満たしやすい。フレキシブル基板の種類も特に制限されず、例えばポリイミド基板であってもよい。
　第２の電極端子３１は、第２の電子部品３０上に形成されている。また、第２の電極端子３１は、第２の電子部品３０を構成する電子回路と導通されている。第２の電極端子３１を構成する材料は、導電性を有するものであれば特に制限されない。第２の電極端子３１を構成する材料としては、例えば、アルミニウム、銀、ニッケル、銅、および金などの金属が挙げられる。第２の電極端子３１を構成する金属は、各種金属によってめっきされていてもよい。
　接着剤層４０は、異方性導電接着剤が硬化したものであり、硬化樹脂層４１と、導電性粒子４２とを備える。すなわち、接着剤層４０は、第１の電極端子２１と第２の電極端子３１とを異方性導電接続する。
　異方性導電接着剤は、硬化性樹脂と、導電性粒子４２とを備える。硬化性樹脂は、重合性化合物、及び硬化開始剤を含む。重合性化合物は、硬化開始剤によって硬化する樹脂である。硬化した重合性化合物、すなわち硬化樹脂層４１は、接着剤層４０内で第１の電極端子２１と第２の電極端子３１とを接着するとともに、導電性粒子４２を接着剤層４０内に保持する。重合性化合物としては、例えばエポキシ重合性化合物、及びアクリル重合性化合物等が挙げられる。エポキシ重合性化合物は、分子内に１つまたは２つ以上のエポキシ基を有するモノマー、オリゴマー、またはプレポリマーである。エポキシ重合性化合物としては、各種ビスフェノール型エポキシ樹脂（ビスフェノールＡ型、Ｆ型等）、ノボラック型エポキシ樹脂、ゴムおよびウレタン等の各種変性エポキシ樹脂、ナフタレン型エポキシ樹脂、ビフェニル型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、スチルベン型エポキシ樹脂、トリフェノールメタン型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、トリフェニルメタン型エポキシ樹脂、及びこれらのプレポリマー等が挙げられる。
　アクリル重合性化合物は、分子内に１つまたは２つ以上のアクリル基を有するモノマー、オリゴマー、またはプレポリマーである。アクリル重合性化合物としては、例えば、メチルアクリレート、エチルアクリレート、イソプロピルアクリレート、イソブチルアクリレート、エポキシアクリレート、エチレングリコールジアクリレート、ジエチレングリコールジアクリレート、トリメチロールプロパントリアクリレート、ジメチロールトリシクロデカンジアクリレート、テトラメチレングリコールテトラアクリレート、２－ヒドロキシ－１，３－ジアクリロキシプロパン、２，２－ビス［４－（アクリロキシメトキシ）フェニル］プロパン、２，２－ビス［４－（アクリロキシエトキシ）フェニル］プロパン、ジシクロペンテニルアクリレート、トリシクロデカニルアクリレート、トリス（アクリロキシエチル）イソシアネレート、およびウレタンアクリレート等が挙げられる。本実施形態では、上記で列挙した重合性化合物のうちいずれか１種を用いてもよく、２種以上を任意に組み合わせて用いてもよい。
　硬化開始剤は、例えば、熱硬化開始剤である。熱硬化開始剤は、熱によって上記重合性化合物とともに硬化する材料である。熱硬化開始剤の種類も特に制限されない。熱硬化開始剤としては、例えば、エポキシ重合性化合物を硬化させる熱アニオンまたは熱カチオン硬化開始剤、アクリル重合性化合物を硬化させる熱ラジカル重合型硬化剤等が挙げられる。本実施形態では、重合性化合物によって適切な熱硬化開始剤を選択すればよい。なお、硬化開始剤の他の例としては、光硬化開始剤が挙げられる。光硬化開始剤としては、例えば、エポキシ重合性化合物を硬化させる光アニオンまたは光カチオン硬化開始剤、アクリル重合性化合物を硬化させる光ラジカル重合型硬化剤等が挙げられる。本実施形態では、重合性化合物によって適切な光硬化開始剤を選択すればよい。
　また、異方性導電接着剤には、上記の成分の他、膜形成樹脂、各種添加剤等を含めてもよい。膜形成樹脂は、異方性導電接着剤を取り扱い易くさせるためにフィルム形状としたい場合に異方性導電接着剤に添加される。膜形成樹脂としては、例えば、エポキシ樹脂、フェノキシ樹脂、ポリエステルウレタン樹脂、ポリエステル樹脂、ポリウレタン樹脂、アクリル樹脂、ポリイミド樹脂、ブチラール樹脂などの種々の樹脂を用いることができる。また、本実施形態では、これらの膜形成樹脂のうちいずれか１種だけを使用することもできるし、２種以上を任意に組み合わせて使用することもできる。なお、膜形成樹脂は、膜形成性および接着信頼性を良好にするという観点からは、フェノキシ樹脂であることが好ましい。なお、異方性導電接着剤をフィルム形状とした場合、フィルム（すなわち、異方性導電フィルム）の厚さは特に制限されない。ただし、フィルムが厚くなりすぎると不要な樹脂の量が多くなりすぎ流動性などに問題が生じる。そのため１００μｍ以下が好ましく、４０μｍ以下がより好ましい。薄くなりすぎると取り扱いが困難になるため、５μｍ以上が好ましく、１２μｍ以上がより好ましい。
　異方性導電接着剤に添加可能な添加剤としては、シランカップリング剤、無機フィラー、着色剤、酸化防止剤、および防錆剤等が挙げられる。シランカップリング剤の種類は特に制限されない。シランカップリング剤としては、例えば、エポキシ系、アミノ系、メルカプト・スルフィド系、ウレイド系のシランカップリング剤等が挙げられる。異方性導電接着剤にこれらのシランカップリング剤が添加された場合、基材の材質によっては接着性を向上させることができる。
　また、無機フィラーは、異方性導電接着剤の流動性及び膜強度、特に後述する最低溶融粘度を調整するための添加剤である。無機フィラーの種類も特に制限されない。無機フィラーとしては、例えば、シリカ、タルク、酸化チタン、炭酸カルシウム、酸化マグネシウム等が挙げられる。
　導電性粒子４２は、接着剤層４０内で第１の電極端子２１と第２の電極端子３１とを異方性導電接続する材料である。具体的には、接着剤層４０内で第１の電極端子２１と第２の電極端子３１とで挟持された導電性粒子４２は、第１の電極端子２１と第２の電極端子３１とを導通させる。一方、他の導電性粒子４２（例えば、第１の電極端子２１同士の隙間に入り込んだ導電性粒子４２、第２の電極端子３１同士の隙間に入り込んだ導電性粒子４２等）は、いずれの端子間も導通させない（すなわち、第１の電極端子２１間で導電性粒子４２が連なる形でのショート、第２の電極端子３１間で導電性粒子４２が連なる形でのショートなどを生じさせない）。
　したがって、導電性粒子４２は、接着剤層４０内で第１の電極端子２１同士及び第２の電極端子３１同士の絶縁性を維持しつつ、第１の電極端子２１と第２の電極端子３１とを導通させることができる。すなわち、導電性粒子４２は、接着剤層４０内で第１の電極端子２１と第２の電極端子３１に挟待されることでこれらを導通し、異方性導電接続する。導電性粒子４２はショートしない程度に異方性導電剤に分散していてもよく、個々に独立するように配置されていてもよい。この配置は、各電極端子のサイズや電極端子の配列方向における距離などによって適宜設定されるが、規則的であってもよい。また、導電性粒子４２は、後述する要件を満たす。なお、導電性粒子４２の圧縮前粒子径は、後述する要件が満たされるのであれば特に制限されないが、一例として１～１０μｍである。ここで、前記したように異方性導電接続前の異方性導電接着剤は、予めフィルム体として形成されたものであってもよい。
　＜２．異方性導電接続構造体が満たすべき要件＞
　次に、異方性導電接続構造体１０が満たすべき要件について説明する。異方性導電接続構造体１０が以下の要件を満たす場合に、突出部２２が導電性粒子４２を捕捉することができる。この結果、接続抵抗を低減することができ、信頼性が向上する。さらに、接着剤層４０は、第１の電極端子２１と第２の電極端子３１とを強固に接着することができる。なお、異方性導電接続構造体１０は、少なくとも要件１～３を満たす必要がある。異方性導電接続構造体１０は、さらに要件４以降を満たすことが好ましい。なお、以下の要件を満たすか否かを評価するに際して、各電極の構造等は、ＳＥＭ（走査型電子顕微鏡）等によって観察可能である。例えば、突出部２２の高さＨ１は、第１の電極端子２１をＳＥＭで観察することで測定可能である。また、以下のパラメータは、複数の異方性導電接続構造体１０について測定された測定値の算術平均値であってもよいし、いずれかの値を代表値として使用してもよい。
　（２－１．要件１）
　導電性粒子４２の圧縮前粒子径に対する突出部２２の高さＨ１の比（以下、「突出部高さ／粒子径比」とも称する」は、６０％未満である。ここで、圧縮前粒子径は、導電性粒子４２を圧縮する前の粒子径である。突出部高さ／粒子径比が６０％以上となる場合には、突出部２２が導電性粒子４２の圧縮を阻害してしまう。すなわち、凹部２３内に捕捉された導電性粒子４２は、十分に圧縮されない。この結果、接続抵抗が増大し、信頼性が悪化する。突出部高さ／粒子径比が６０％未満となる場合、突出部２２は、導電性粒子４２を凹部２３内に捕捉することができる。さらに、導電性粒子４２は、十分に圧縮される。突出部高さ／粒子径比は、５０％未満であることが好ましい。
　なお、突出部高さ／粒子径比の下限値は特に制限されないが、あまりに小さすぎると突出部２２が導電性粒子４２を十分に捕捉できない可能性がある。このため、突出部高さ／粒子径比は、３０％以上であることが好ましく、４０％以上であることがより好ましく、４２％以上であることが更に好ましい。
　（２－２．要件２）
　第１の電極端子２１の開口面積率は５５％以上である。ここで、開口面積率は、第１の電極端子２１の表面の全面積に対する凹部２３の開口面の面積比である。開口面積率が５５％未満となる場合、凹部２３内に十分な数の導電性粒子４２を捕捉することができない。開口面積率は、７０％以上であることが好ましい。開口面積率の上限値は特に制限されないが、開口面積率が大きすぎると突出部２２の剛性が低くなる可能性がある。このため、開口面積率は９０％以下であることが好ましい。
　（２－３．要件３）
　第２の電極端子３１の高さＨ２は６μｍ以上である。これにより、第２の電極端子３１間にも十分な量の接着剤が流入するので、第１の電極端子２１と第２の電極端子３１とが強固に接着される。さらに、第１の電極端子２１の突出部２２が仮に第２の電極端子３１に接触したとしても、第１の電極端子２１の下方には、十分な量の硬化樹脂層４１が存在する。したがって、突出部２２、ひいては第１の電極端子２１は硬化樹脂層４１によって十分に保護される。この結果、接続抵抗が低減し、信頼性が向上する。高さＨ２の上限値は特に制限されないが、３５μｍ以下が好ましい。
　（２－５．要件４）
　第２の電極端子３１の硬度に対する第１の電極端子２１の硬度の比（以下、「電極端子の硬度比」とも称する）は１０％より大きいことが好ましい。第１の電極端子２１が第２の電極端子３１よりも柔らかすぎる場合、圧縮時（すなわち、異方性導電接続時）に、第１の電極端子２１が大きく変形するからである。変形量が大きい場合、第１の電極端子２１同士が接触し、ショートする可能性がある。なお、各電極端子の硬度は、例えばピッカース硬度である。電極端子の硬度比は、１５％より大きいことがさらに好ましく、３０％より大きいことがさらに好ましい。電極端子の硬度比の上限値は特に制限されないが、１程度（すなわち、両者の硬度がほぼ一致）であってもよい。
　（２－６．要件５）
　凹部２３の短辺長さに対する導電性粒子４２の圧縮前粒子径の比（以下、「粒子径／開口短辺長さ比」とも称する）は、１０％未満であることが好ましい。ここで、凹部２３の短辺長さは、凹部２３の平面視形状（例えば図２に示す形状）の短辺長さである。粒子径／開口短辺長さ比が１０％未満となる場合、より多くの導電性粒子４２を凹部２３内に捕捉することができる。粒子径／開口短辺長さ比は、９％未満であることがさらに好ましく、８．５％未満であることが更に好ましい。なお、粒子径／開口短辺長さ比の下限値は、要件１によって定まる。すなわち、粒子径／開口短辺長さ比が小さすぎると、導電性粒子４２の粒子径が小さくなりすぎて、要件１が満たされなくなる。
　（２－７．要件６）
　また、凹部２３内に存在する導電性粒子４２の平均占有面積率が２０％未満であることが好ましい。平均占有面積率の下限は、圧縮された導電性粒子１個分以上の占有面積率であることが好ましく、圧縮された導電性粒子２個分以上の占有面積率であることがより好ましく、圧縮された導電性粒子３個分以上の占有面積率であることが更により好ましい。ここで、各導電性粒子４２の占有面積は、圧縮された導電性粒子４２を水平面に投影したときに得られる面積である。また、平均占有面積率は、以下の工程で測定可能である。すなわち、異方性導電接続構造体１０から第１の電極端子２１を引き剥がすか、あるいは、接続部分まで異方性導電接続構造体１０を研磨することで、第１の電極端子２１と第２の電極端子３１との接続部分を露出させる。ついで、露出された接続部分を５０個選択する。ついで、各接続部分を面視野で観察し、各接続部分における導電性粒子４２の占有面積を測定する。なお、観察はＳＥＭ（走査型電子顕微鏡）等で行えば良い。そして、各接続部分の凹部２３内に存在する全ての導電性粒子４２の占有面積を測定し、これらの総面積を凹部２３の開口面の面積で除算する。これにより、各接続部分における占有面積率を測定する。そして、これらの占有面積率を算術平均することで、平均占有面積率を測定する。平均占有面積率が上述した範囲内となる場合に、凹部２３内に十分な量の導電性粒子４２が捕捉されていることになる。
　導電性粒子４２は反発が大きすぎる場合に、信頼性などに影響を及ぼす恐れがある。そのため、異方性導電接続構造体は、上述した要件に加え、さらに以下の要件を満たすことが好ましい。すなわち、導電性粒子４２の３０％変形時の圧縮硬さ（Ｋ値）は６０００Ｎ／ｍｍ２未満であることが好ましく、５５００Ｎ／ｍｍ２以下であることがより好ましい。ここで、３０％変形時の圧縮硬さ（Ｋ値）は、導電性粒子４２の圧縮強度の指標となるパラメータの一種である。３０％変形時の圧縮硬さ（Ｋ値）は、以下の工程で算出される。すなわち、導電性粒子４２の粒子径（直径）が元の粒子径に比べて３０％短くなるまで、導電性粒子４２を一方向に圧縮する。そして、このときの荷重、変位量、及び圧縮前の導電性粒子４２の半径と、以下の数式（１）とに基づいて、３０％変形時の圧縮硬さ（Ｋ値）を算出する。数式（１）によれば、Ｋ値が小さいほど導電性粒子４２は柔らかい粒子となる。
　Ｋ＝（３／√２）Ｆ・Ｓ－８／２・Ｒ－１／２　　　（１）
　数式（１）中、Ｆは、導電性粒子４２の３０％圧縮変形時における荷重であり、Ｓは圧縮による導電性粒子４２の変位量（ｍｍ）であり、Ｒは導電性粒子４２の圧縮前の半径（ｍｍ）である。
　以上により、本実施形態によれば、突出部２２の高さＨ１等が所定の要件を満たすので、突出部２２を活かして異方性導電接続構造体１０の品質を高めることができる。具体的には、突出部２２は、より多くの導電性粒子４２を突出部２２内の凹部２３に捕捉することができる。さらに、凹部２３内の導電性粒子は十分に圧縮される。したがって、接続抵抗が低減し、信頼性が向上する。さらに、第２の電極端子３１の高さＨ２が所定範囲内の値となっているので、第２の電極端子３１の間には十分な量の接着剤が流入する。したがって、第１の電極端子と第２の電極端子とが強固に接着される。さらに、本実施形態は、ＡＣＦの圧着ラインさえあれば適用可能である。したがって、本実施形態を容易に導入することが可能となる。
　＜１．実施例１＞
　（１－１．第１の電子部品の準備）
　第１の電子部品２０として、ＩＣチップを準備した。このＩＣチップには、第１の電極端子２１として複数のバンプが形成されていた。第１の電極端子２１には、高さＨ１＝１．５μｍの突出部２２が形成されていた。また、バンプサイズ（すなわち、第１の電極端子２１の平面形状）は、５０μｍ×５０μｍの正方形状であった。また、開口面積率は７３．９６％であった。したがって、要件２は満たされていた。また、第１の電極端子２１のピッカース硬度は５０Ｈｖであった。
　（１－２．第２の電子部品の準備）
　第２の電子部品３０として、フレキシブル基板を準備した。具体的には、厚さ２５μｍのポリイミド基板（新日鐵化学社製ＣＳ１２－２５－００ＣＥ）にＣｕエッチング後、Ｎｉ／Ａｕめっきを施すことで、第２の電極端子３１を形成した。以上の工程により、フレキシブル基板を作製した。Ｎｉ／Ａｕめっきは電解めっき法により行った。第２の電極端子３１の高さＨ１は１２μｍであった。したがって、要件３は満たされていた。また、第２の電極端子３１の幅は５０μｍであった。したがって、第１の電極端子２１と第２の電極端子３１との有効接続面積は１８４９μｍ２であった。ここで、有効接続面積は、第１の電極端子２１の開口面積に対して第２の電極端子３１が占める面積を意味する。
　また、第２の電極端子３１のピッカース硬度は１５０Ｈｖであった。したがって、電極端子の硬度比は３３．３％であった。したがって、要件４は満たされていた。
　（１－３．異方性導電フィルム（ＡＣＦ）の準備）
　フェノキシ樹脂（品名：ＹＰ５０、新日鐵化学社製）３６質量部、エポキシ硬化剤（品名：ＨＰ３９４１ＨＰ、旭化成ケミカルズ社製）３６質量部、エポキシモノマー（品名：ＨＰ４０３２Ｄ、ＤＩＣ社製）５質量部、ゴム変性エポキシ樹脂（品名：ＸＥＲ－９１、ＪＳＲ社製）１５質量部、ゴム成分（品名：ＳＧ８０Ｈ、長瀬ケムテックス社製）７質量部、カップリング剤（品名：Ａ－１８７、モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社）、導電性粒子４２（日本化学株式会社製）を混合することで、接着剤組成物を作製した。ここで、導電性粒子４２は、個数密度が３，５００，０００個／ｍｍ３となるように接着剤組成物に配合した。そして、別途用意した厚さ３８μｍの剥離処理ＰＥＴフィルムに接着剤組成物をバーコータにより塗工、乾燥することで、厚さ４０μｍの異方性導電フィルムを得た。
　導電性粒子４２の圧縮前粒子径は３．５μｍであり、Ｎｉ／Ａｕめっきが施されていた。したがって、突出部高さ／粒子径比は、４２．８５％であった。したがって、要件１は満たされていた。また、粒子径／開口短辺長さ比は、８．１４％であった。したがって、要件５は満たされていた。以上により、実施例１は、要件１～５を満たしていることが確認できた。また、導電性粒子４２の３０％変形時の圧縮硬さは５５００Ｎ／ｍｍ２であった。３０％変形時の圧縮硬さは、島津製作所製微小圧縮試験機により測定した。なお、以下の各実施例、比較例で使用した導電性粒子４２は、いずれも３０％変形時の圧縮硬さが５５００Ｎ／ｍｍ２であった。
　（１－４．異方性導電接続構造体の作製）
　第１の電子部品２０、異方性導電フィルム、及び第２の電子部品３０を順次積層した。ここで、第１の電極端子２１と第２の電極端子３１との位置が揃うように第１の電子部品２０及び第２の電子部品３０の位置合わせを行った。ついで、第２の電子部品３０上に緩衝材等を介してヒートツールを押し当てた。ついで、ヒートツールを用いて第１の電極端子２１と第２の電極端子３１とを熱圧着した。以上の工程により、異方性導電接続構造体１０を作製した。ここで、熱圧着の条件は、２００℃－１０ｓｅｃ－１００ＭＰａとした。すなわち、ヒートツールの温度が圧着開始から１０秒間で２００℃になるようにヒートツールを昇温しつつ、１００ＭＰａの圧力で第１の電極端子２１と第２の電極端子３１とを１０秒間熱圧着した。異方性導電接続構造体１０は、後述する評価のために複数個作製した。異方性導電接続構造体１０の構成を表１にまとめて示す。
　（１－５．初期抵抗）
　１－４．で作製した異方性導電接続構造体１０の接続抵抗をデジタルマルチメーター（商品名：デジタルマルチメーター７５６１、横河電機社製）を用いて測定した。結果を表１にまとめて示す。なお、複数の接続部分での初期抵抗を測定した。表１には、測定値の範囲を示す。
　（１－６．信頼性評価）
　１－４．で作製した異方性導電接続構造体１０の冷熱サイクル試験を行うことで、信頼性を評価した。冷熱サイクル試験では、異方性導電接続構造体１０を－４０℃及び１００℃の雰囲気に各３０分間曝し、これを１サイクルとする冷熱サイクルを５００サイクル行った。ついで、異方性導電接続構造体１０の接続部分を４００箇所抽出し、これらのうち不良（１００ｍΩ以上の抵抗を示すチャンネル）があった箇所の数をカウントした。結果を表１にまとめて示す。
　（１－７．占有面積率等の測定）
　異方性導電接続構造体１０から第１の電極端子２１を引き剥がすことで、接続部分を露出させた。ついで、接続部分をＳＥＭで観察し、凹部２３内に存在する導電性粒子４２の数（すなわち、捕捉粒子数）、及び導電性粒子４２の平均占有面積率を測定した。平均占有面積率の測定は上述した方法により行った。すなわち、測定対象となる５０個の接続部分を面視野で観察し、粒子が占有している面積、すなわち占有面積を測定した。そして、この占有面積に基づいて、占有面積率を算出した。また、導電性粒子４２の捕捉粒子数は、５０個の接続部分について測定された粒子数の算術平均値とした。結果を表１にまとめて示す。
　＜２．実施例２＞
　実施例２では、第１の電極端子２１のピッカース硬度を９０Ｈｖとした他は実施例１と同様の処理を行った。実施例２では、電極端子の硬度比は６０％となった。したがって、実施例２でも要件４は満たされていた。異方性導電接続構造体１０の構成及び評価結果を表１にまとめて示す。
　＜３．実施例３＞
　実施例３では、第１の電極端子２１のピッカース硬度を２０Ｈｖとした他は実施例１と同様の処理を行った。実施例３では、電極端子の硬度比は１３．３％となった。したがって、実施例３でも要件４は満たされていた。ただし、硬度比が３０％以下となったので、第１の電極端子２１の若干の変形が確認された。異方性導電接続構造体１０の構成及び評価結果を表１にまとめて示す。
　＜４．実施例４＞
　実施例４では、第２の電極端子３１のピッカース硬度を５００Ｈｖとした他は実施例１と同様の処理を行った。具体的には、第２の電極端子３１のめっきを無電解めっきで行うことで、上記ピッカース硬度を得た。実施例４では、電極端子の硬度比は１０％となった。したがって、実施例４では要件４は満たされていなかった。このため、圧着後に第１の電極端子２１が大きく変形した。しかし、第１の電極端子２１のピッチを広めにしていたため、ショートは発生しなかった。異方性導電接続構造体１０の構成及び評価結果を表１にまとめて示す。
　＜５．実施例５＞
　実施例５では、第２の電極端子３１の幅を４０μｍとした他は実施例１と同様の処理を行った。異方性導電接続構造体１０の構成及び評価結果を表１にまとめて示す。
　＜６．実施例６＞
　実施例６では、導電性粒子４２の粒径を３．０μｍとした他は実施例１と同様の処理を行った。異方性導電接続構造体１０の構成及び評価結果を表１にまとめて示す。
　＜７．実施例７＞
　第２の電極端子３１の幅を３０μｍとした他は実施例１と同様の処理を行った。異方性導電接続構造体１０の構成及び評価結果を表１にまとめて示す。
　＜８．実施例８＞
　第２の電極端子３１の幅を２０μｍとした他は実施例１と同様の処理を行った。異方性導電接続構造体１０の構成及び評価結果を表１にまとめて示す。
　＜９．実施例９＞
　第２の電極端子３１の高さＨ２を６μｍとした他は実施例１と同様の処理を行った。異方性導電接続構造体１０の構成及び評価結果を表１にまとめて示す。
　＜１０．比較例１＞
　導電性粒子４２の圧縮前粒子径を２．５μｍとした他は実施例１と同様の処理を行った。したがって、突出部高さ／粒子径比は６０％となるので、要件１が満たされなかった。異方性導電接続構造体１０の構成及び評価結果を表２にまとめて示す。
　＜１１．比較例２＞
　第１の電極端子２１の開口面積率を５１．８４％とした他は、実施例１と同様の処理を行った。したがって、比較例２では、要件２が満たされなかった。異方性導電接続構造体１０の構成及び評価結果を表２にまとめて示す。
　＜１２．比較例３＞
　突出部２２の高さＨ１を３．０μｍとした他は実施例１と同様の処理を行った。したがって、比較例３では、突出部高さ／粒子径比は８５．７１％となるので、要件１が満たされなかった。異方性導電接続構造体１０の構成及び評価結果を表２にまとめて示す。
　＜１３．比較例４＞
　第１の電極端子２１から突出部２２を研磨により除去し、第２の電極端子３１の幅を２０μｍとした他は実施例１と同様の処理を行った。したがって、比較例４では、少なくとも要件１が満たされなかった。異方性導電接続構造体１０の構成及び評価結果を表２にまとめて示す。
　＜１４．比較例５＞
　第２の電子部品３０をガラス基板とした他は、実施例１と同様の処理を行った。このガラス基板上には、ＩＴＯからなる第２の電極端子３１が形成されており、第２の電極端子３１の高さＨ２は１μｍ以下であった。したがって、比較例５では、要件３が満たされなかった。異方性導電接続構造体１０の構成及び評価結果を表２にまとめて示す。
　＜１５．参考例１＞
　第１の電極端子２１から突出部２２を研磨により除去し、第２の電極端子３１の幅を４０μｍとした他は実施例１と同様の処理を行った。したがって、参考例１では、少なくとも要件１が満たされなかった。異方性導電接続構造体１０の構成及び評価結果を表２にまとめて示す。
　＜１６．参考例２＞
　第１の電極端子２１から突出部２２を研磨により除去し、第２の電極端子３１の幅を３０μｍとした他は実施例１と同様の処理を行った。したがって、参考例１では、少なくとも要件１が満たされなかった。異方性導電接続構造体１０の構成及び評価結果を表２にまとめて示す。
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000002
　実施例１～３、５～９は、要件１～６をすべて満たすので、初期抵抗、不良率、及びピール強度に関していずれも良好な結果が得られた。これらの実施例では、突出部２２により十分な数の導電性粒子４２を凹部２３内に捕捉することができた。さらに、これらの導電性粒子４２を十分に圧縮することができた。このため、良好な結果が得られたと推定される。
　ただし、実施例３では、第１の電極端子２１に若干の変形が観察された。実施例３では、電極端子の硬度比が３０％以下となっている。すなわち、実施例３では、要件４は満たされるが、３０％以下の値となっている。また、実施例４でも良好な結果が得られたが、第１の電極端子２１の変形がさらに大きくなった。実施例４では、電極端子の硬度比が１０％以下となっている。したがって、要件４が満たされない。したがって、電極端子の変形を抑制するという観点からは、要件４が満たされることが好ましいことがわかった。
　一方、比較例１～５では、特に信頼性の評価が悪くなった。比較例１～５では、要件１～３のいずれかが満たされないため、このような結果が得られたと推定される。参考例１、２では、突出部２２が形成されなかった。このため、捕捉粒子数が実施例に対して少なかった。しかし、実施例とほぼ遜色ない評価結果が得られた。その一方で、同じく突出部２２が形成されていない比較例４では、評価結果が悪くなった。この理由として、参考例１、２では、有効接続面積が大きかったことが挙げられる。しかし、参考例１、２では、突出部２２を除去する作業が別途必要になるので、異方性導電接続に手間がかかってしまう。したがって、実施例１～９の方が好ましいと言える。
　以上、添付図面を参照しながら本発明の好適な実施形態について詳細に説明したが、本発明はかかる例に限定されない。本発明の属する技術の分野における通常の知識を有する者であれば、特許請求の範囲に記載された技術的思想の範疇内において、各種の変更例または修正例に想到し得ることは明らかであり、これらについても、当然に本発明の技術的範囲に属するものと了解される。
　１０　　　異方性導電接続構造体
　２０　　　第１の電子部品
　２１　　　第１の電極端子
　２２　　　突出部
　２３　　　凹部
　３０　　　第２の電子部品
　３１　　　第２の電極端子
　４０　　　接着剤層
　４１　　　硬化樹脂層
　４２　　　導電性粒子

Claims (6)

  1. 　表面に突出部が形成された第１の電極端子と、
    　第２の電極端子と、
    　前記第１の電極端子と前記第２の電極端子とを導通する導電性粒子を含む異方性導電接着剤層と、を備え、
    　前記導電性粒子の圧縮前粒子径に対する前記前記突出部の高さの比は、６０％未満であり、
    　前記第１の電極端子の開口面積率は５５％以上であり、
    　前記第２の電極端子の高さは６μｍ以上である、
    異方性導電接続構造体。
  2. 　前記第２の電極端子の硬度に対する前記第１の電極端子の硬度の比は１０％より大きい、請求項１記載の異方性導電接続構造体。
  3. 　前記第１の電極端子の表面には、前記突出部に囲まれた凹部が形成され、
    　前記第１の電極端子の凹部の短辺長さに対する前記導電性粒子の圧縮前粒子径の比は１０％未満である、請求項１または２記載の異方性導電接続構造体。
  4. 　前記第１の電極端子の表面には、前記突出部に囲まれた凹部が形成され、
    　前記第１の電極端子の凹部に存在する前記導電性粒子の平均占有面積率が２０％未満である、請求項１～３のいずれか１項に記載の異方性導電接続構造体。
  5. 　前記突出部は、前記第１の電極端子の表面の外縁全周にわたって形成されている、請求項１～４のいずれか１項に記載の異方性導電接続構造体。
  6. 　前記第１の電極端子は、第１の電子部品に形成されるバンプである、請求項１～５の何れか１項に記載の異方性導電接続構造体。
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