WO2017117836A1 - 一种阵列基板及其制作方法、显示面板 - Google Patents

一种阵列基板及其制作方法、显示面板 Download PDF

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Publication number
WO2017117836A1
WO2017117836A1 PCT/CN2016/072670 CN2016072670W WO2017117836A1 WO 2017117836 A1 WO2017117836 A1 WO 2017117836A1 CN 2016072670 W CN2016072670 W CN 2016072670W WO 2017117836 A1 WO2017117836 A1 WO 2017117836A1
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Prior art keywords
source
pixel electrode
drain
layer
array substrate
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PCT/CN2016/072670
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English (en)
French (fr)
Inventor
孙博
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深圳市华星光电技术有限公司
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Priority to US14/915,909 priority Critical patent/US10177171B2/en
Publication of WO2017117836A1 publication Critical patent/WO2017117836A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133397—Constructional arrangements; Manufacturing methods for suppressing after-image or image-sticking
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G02F1/136286—Wiring, e.g. gate line, drain line
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/30—Gray scale
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]

Definitions

  • the present application relates to the field of display technologies, and in particular, to an array substrate, a method for fabricating the same, and a display panel.
  • Thin film transistor (English: thin film The transistor (referred to as: TFT) liquid crystal display is driven by a TFT matrix.
  • TFT Thin film transistor
  • the scanning line on the liquid crystal display turns on the TFT active layer, the signal of the data line is transmitted to the source through the channel layer, and the source transmits the signal again.
  • the pixel electrode of the liquid crystal display controls the liquid crystal layer to display the corresponding gray scale.
  • the conventional TFT structure is generally provided with a passivation layer (referred to as PV) on the source layer, and the passivation layer is provided with a via hole (English: Via-Hole), and the source passes through the via hole and The pixel electrodes are connected, so the resistance value is large, resulting in slower signal writing, lower pixel charging rate, and a series of defects caused by insufficient charging rate, such as afterimages (English: Image Sticking) and so on.
  • PV passivation layer
  • the present application provides an array substrate, a manufacturing method thereof, and a display panel, which can improve a charging current and increase a charging rate.
  • a first aspect of the present application provides an array substrate including a substrate and a TFT and a pixel electrode disposed on the substrate, the TFT including a gate, a source, and a drain; wherein the source or the drain
  • the pixel electrodes are directly in contact with each other without providing other material layers.
  • the pixel electrode is disposed on a surface of the source or the drain to form a direct contact.
  • the pixel electrode is directly in contact with the source or the drain in the same layer.
  • the material of the pixel electrode and the source or the drain that are in direct contact with each other is a transparent conductive film.
  • the method further includes an alignment layer covering the source, the drain, and the pixel electrode.
  • the TFT further includes a gate insulating layer and a channel layer stacked on the gate, and the source and the drain are disposed on the channel layer.
  • a second aspect of the present application provides a display panel including the above array substrate.
  • a third aspect of the present invention provides a method for fabricating an array substrate, comprising: forming a TFT on a substrate, wherein the TFT includes a gate, a source, and a drain; forming a pixel on a gate or a source of the TFT And an electrode, wherein the source or the drain and the pixel electrode are directly in contact with each other without providing another material layer.
  • the step of forming a pixel electrode on the gate or the source of the TFT includes: forming a pixel electrode on a surface of the source or the drain; or, at the same layer of the source or the drain A pixel electrode is formed thereon.
  • the method further includes covering the source, the drain, and the pixel electrode with an alignment layer.
  • the source or the drain in the array substrate and the pixel electrode are not directly disposed with other material layers, so that the resistance between the source or the drain and the pixel electrode is reduced, at the source or the drain.
  • the pole writes an electrical signal to the pixel electrode, the writing speed is increased, the charging current is increased, and the charging rate is also increased.
  • the certain charging rate guaranteed by the present application the existing disadvantages caused by insufficient charging rate are avoided.
  • FIG. 1 is a schematic structural view of an embodiment of an array substrate of the present application.
  • FIG. 2 is a schematic structural view of another embodiment of the array substrate of the present application.
  • FIG. 3 is a flow chart of an embodiment of a method for fabricating an array substrate of the present application
  • 4a is a schematic structural view showing a gate electrode formed in another embodiment of the method for fabricating the array substrate of the present application
  • 4b is a schematic structural view showing a gate insulating layer formed in another embodiment of the method for fabricating the array substrate of the present application;
  • 4c is a schematic structural view showing a channel layer formed in another embodiment of the method for fabricating the array substrate of the present application.
  • 4d is a schematic structural view showing a source and a drain when another embodiment of the method for fabricating the array substrate of the present application is formed;
  • 4e is a schematic structural view of a pixel electrode formed in another embodiment of the method for fabricating an array substrate of the present application;
  • 4f is a schematic structural view showing an alignment layer formed in another embodiment of the method for fabricating the array substrate of the present application.
  • FIG. 1 is a schematic structural diagram of an embodiment of an array substrate of the present application.
  • the array substrate includes a substrate 11 and a TFT disposed on the substrate 11 12 and the pixel electrode 13 (it is understood that Fig. 1 exemplarily shows only one TFT and pixel electrode, but in practical applications, a plurality of TFTs and pixel electrodes are disposed on the array substrate).
  • the TFT 12 includes a gate 121, a source 122, and a drain 123.
  • the source electrode 122 or the drain electrode 123 and the pixel electrode 13 are directly in contact with each other without providing another material layer. Since the source 122 or the drain 123 is in direct contact with the pixel electrode 13 without passing through the via hole, the resistance between the source and the pixel electrode is reduced, thereby increasing the charging current and increasing the charging rate.
  • the direct contact between the source 122 and the pixel electrode 13 will be described as an example.
  • the pixel electrode 13 can be disposed on the surface of the source 122 to form a direct contact.
  • the pixel electrode 13 is deposited on the upper surface of the source 122.
  • the source 122 receives the data.
  • the signal of the line is directly written to the pixel electrode 13 through the upper surface of the source, the charging rate is improved.
  • the pixel electrode 13 and the source electrode 122 may also be disposed in the same layer, and the pixel electrode 13 is in direct contact with the side surface of the source electrode 122.
  • the other structure of FIG. 2 is consistent with FIG. Therefore, it will not be described.
  • the source 122 receives the signal of the data line, it directly writes to the pixel electrode 13 through the side, thereby increasing the charging rate.
  • the material of the pixel electrode 13 and the source 122 may be a transparent conductive film, such as indium tin oxide (commonly known as ITO).
  • ITO indium tin oxide
  • the pixel electrode 13 serves as the source 122 of the TFT, receives the signal of the data line through the channel layer, and also functions as the pixel electrode 13. With the liquid crystal layer, it is deflected to realize the corresponding gray scale.
  • the source 122 and the pixel electrode 13 can also be directly contacted by other structures, which is not limited herein.
  • the passivation layer may not be provided, and the alignment layer 14 may be directly disposed on the source 122, the drain 123, and the pixel electrode 13.
  • the alignment layer 14 replaces the passivation layer on the existing array substrate for protecting the source electrode 122, the drain electrode 123, and the pixel electrode 13 from being oxidized, and the alignment layer 14 is also provided with an alignment direction for pretilt angle. fixed. Since the array substrate does not need to be provided with a passivation layer, the material and the mask process are saved, and the array substrate is also made lighter and thinner.
  • the alignment layer 14 should directly cover the pixel electrode 13, the upper surface of the drain electrode 123, and the source electrode 122. There is no portion of the upper surface that is covered by the pixel electrode 13. For example, if the pixel electrode 13 completely covers the source electrode 122, the alignment layer 14 covers the upper surface of the drain electrode 123 and the pixel electrode 13. If the pixel electrode 13 is in the same layer as the source electrode 122, the alignment layer 14 covers the source electrode 122 and the drain electrode. 123 and the upper surface of the pixel electrode 13.
  • the source is connected to the pixel electrode, but in the embodiment where the other drain is connected to the pixel electrode, the drain and the pixel electrode can also be used in the above structure to realize the difference between the drain and the pixel electrode. Set other material layers and contact them directly, and do not repeat them here.
  • the TFT The 12 further includes a gate insulating layer 124 and a channel layer 125 stacked on the gate electrode 121, and the source electrode 122 and the drain electrode 123 are disposed on the channel layer 125.
  • the gate insulating layer 124 is stacked between the gate electrode 121 and the channel layer 125 to insulate the gate electrode 121 and the channel layer 125.
  • the source 122 and the drain 123 are located on the same layer on the channel layer 125.
  • the gate insulating layer 124 may be an aluminum nitride (chemical formula: AlN) film, and the channel layer 125 may be composed of a metal oxide, such as indium gallium zinc oxide (English: indium) Gallium zinc oxide, referred to as: IGZO). Specifically, the channel layer 125 may specifically include an amorphous silicon semiconductor layer (English: AS Island) Pattern) 125a and doped layer 125b.
  • AlN aluminum nitride
  • IGZO indium gallium zinc oxide
  • IGZO indium gallium zinc oxide
  • the channel layer 125 may specifically include an amorphous silicon semiconductor layer (English: AS Island) Pattern) 125a and doped layer 125b.
  • the substrate 11 may be a transparent substrate made of a glass substrate or other insulating material.
  • the gate electrode 121 may be formed of a molybdenum (Mo) layer.
  • the source electrode 122 and the drain electrode 123 may each be formed by a molybdenum layer, an aluminum layer, and a molybdenum layer; or, both of the molybdenum layer, the first copper layer, the second copper layer, and the molybdenum layer, wherein the deposition is first
  • the power required for the copper layer is greater than the power required to deposit the second copper layer.
  • the present application further provides an embodiment of a display panel.
  • the display panel includes the array substrate in the above embodiment, and thus is not described herein.
  • FIG. 3 is a flow chart of an embodiment of a method for fabricating an array substrate of the present application.
  • the array substrate is the array substrate in the above embodiment, and the method includes:
  • S31 Forming a TFT on a substrate, wherein the TFT includes a gate, a source, and a drain.
  • a gate electrode 421 is first formed on the substrate 41, then a gate insulating layer 424 is formed on the gate electrode 421, and a channel layer 425 is further disposed on the gate insulating layer 424, and then in the trench.
  • a source 422 and a drain 423 are formed on the via layer 425, respectively, wherein the source 422 and the drain 423 are disposed apart.
  • the patterns of the gate 421, the source 422, and the drain 423 are all obtained by etching, such as wet etching, dry etching, or the like.
  • the source and the drain are both formed by a molybdenum layer, an aluminum layer, and a molybdenum layer; or, each of the molybdenum layer, the first copper layer, the second copper layer, and the molybdenum layer, wherein the deposition layer
  • the power required for a copper layer is greater than the power required to deposit a second copper layer.
  • S32 forming a pixel electrode on a gate or a source of the TFT, wherein the source or the drain and the pixel electrode are directly in contact with each other without providing another material layer.
  • the source is connected to the pixel electrode, and the pixel electrode is disposed on the upper surface of the source.
  • a pixel electrode 43 is formed on the source electrode 422, wherein the pixel electrode 43 is deposited on the upper surface of the source electrode 422 and patterned; and then, directly on the drain electrode 423 and the pixel 43
  • the surface is coated with the alignment layer 44, and the alignment direction can be set by directional rubbing or the like to serve as both the passivation layer and the alignment layer.
  • the source and the pixel electrode may be disposed in the same layer.
  • a pixel electrode is further formed on the gate insulating layer to directly contact the side of the source.
  • the source and the pixel electrode are disposed as a transparent conductive film, in the above step, the source and the pixel electrode may be simultaneously formed.
  • the source or the drain in the array substrate and the pixel electrode are not directly disposed with other material layers, so that the resistance between the source or the drain and the pixel electrode is reduced, at the source or the drain.
  • the pole writes an electrical signal to the pixel electrode, the writing speed is increased, the charging current is increased, and the charging rate is also increased.
  • the certain charging rate guaranteed by the present application the existing disadvantages caused by insufficient charging rate are avoided.

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Abstract

一种阵列基板及其制作方法、显示面板。其中，该阵列基板包括基板（11）以及设置在所述基板（11）之上的TFT（12）和像素电极（13），所述TFT（12）包括栅极（121）、源极（122）和漏极（123）；其中，所述源极（122）或漏极（123）与所述像素电极（13）之间不设置其他材料层而直接接触。

Description

一种阵列基板及其制作方法、显示面板
【技术领域】
本申请涉及显示技术领域，特别是涉及一种阵列基板及其制作方法、显示面板。
【背景技术】
薄膜晶体管（英文：thin film transistor，简称：TFT）液晶显示器是采用TFT矩阵进行驱动，当液晶显示器上的扫描线将TFT有源层导通时，数据线的信号通过沟道层传输至源极，源极再将信号传输至液晶显示器的像素电极，进而像素电极控制液晶层实现显示相应灰阶。
现有的TFT结构通常是在源极层之上设置钝化层（英文简称：PV），该钝化层上设置有导通孔（英文：Via-Hole），源极通过该导通孔与像素电极相连，故阻值较大，造成信号的写入较慢，像素充电率下降，并且会有一系列由于充电率不足而引起的不良，例如残像（英文：Image Sticking）等。
【发明内容】
本申请提供一种阵列基板及其制作方法、显示面板，能够提高充电电流，提高充电率。
本申请第一方面提供一种阵列基板，包括基板以及设置在所述基板之上的TFT和像素电极，所述TFT包括栅极、源极和漏极；其中，所述源极或漏极与所述像素电极之间不设置其他材料层而直接接触。
其中，所述像素电极设置在所述源极或漏极的表面上而形成直接接触。
其中，所述像素电极与所述源极或漏极设置于同一层而直接接触。
其中，所述像素电极与直接接触的所述源极或漏极的材料均为透明导电薄膜。
其中，还包括覆盖在所述源极、漏极以及所述像素电极上的配向层。
其中，所述TFT还包括叠置在所述栅极上的栅绝缘层、沟道层，所述源极和漏极设置在所述沟道层上。
本申请第二方面提供一种显示面板，包括以上所述的阵列基板。
本申请第三方面提供一种阵列基板的制作方法，包括：在基板上形成TFT，其中，所述TFT包括栅极、源极和漏极；在所述TFT的栅极或源极上形成像素电极，其中，所述源极或漏极与所述像素电极之间不设置其他材料层而直接接触。
其中，所述在所述TFT的栅极或源极上形成像素电极的步骤包括：在所述源极或漏极的表面上形成像素电极；或者，在所述源极或漏极的同一层上形成像素电极。
其中，所述方法还包括：在所述源极、漏极以及所述像素电极上覆盖配向层。
上述方案中，阵列基板中的源极或漏极与像素电极之间不设置其他材料层而直接接触，使得该源极或漏极与像素电极之间的阻值减小，在源极或漏极向像素电极写入电信号时，加快了写入速度，提高了充电电流，也提高了充电率。而且，由于本申请保证的一定充电率，故避免了现有由于充电率不足而引起的不良现象。
【附图说明】
图1是本申请阵列基板一实施方式的结构示意图；
图2是本申请阵列基板另一实施方式的结构示意图；
图3是本申请阵列基板的制成方法一实施方式的流程图；
图4a是本申请阵列基板的制成方法另一实施例中形成栅极时的结构示意图；
图4b是本申请阵列基板的制成方法另一实施例中形成栅绝缘层时的结构示意图；
图4c是本申请阵列基板的制成方法另一实施例中形成沟道层时的结构示意图；
图4d是本申请阵列基板的制成方法另一实施例中形成源极和漏极时的结构示意图；
图4e是本申请阵列基板的制成方法另一实施例中形成像素电极时的结构示意图；
图4f是本申请阵列基板的制成方法另一实施例中形成配向层时的结构示意图。
【具体实施方式】
以下描述中，为了说明而不是为了限定，提出了诸如特定系统结构、接口、技术之类的具体细节，以便透彻理解本申请。然而，本领域的技术人员应当清楚，在没有这些具体细节的其它实施方式中也可以实现本申请。在其它情况中，省略对众所周知的装置、电路以及方法的详细说明，以免不必要的细节妨碍本申请的描述。
请参阅图1，图1是本申请阵列基板一实施方式的结构示意图。本实施方式中，阵列基板包括基板11以及设置在所述基板11之上的TFT 12和像素电极13（可以理解的是，图1仅示范性示出一个TFT和像素电极，但在实际应用中，该阵列基板上设置有多个TFT和像素电极）。所述TFT 12包括栅极121、源极122和漏极123。其中，所述源极122或漏极123与所述像素电极13之间不设置其他材料层而直接接触。由于源极122或漏极123与像素电极13直接接触，而无需经过导通孔，减小了源极和像素电极间的阻值，进而可提高充电电流，提高充电率。
本实施例中，以源极122与像素电极13直接接触为例进行说明。
具体，该像素电极13可设置在源极122的表面上而形成直接接触，例如图1所示，该像素电极13沉积于该源极122的上表面，此时，当源极122接收到数据线的信号时，直接通过源极的上表面写入至像素电极13，提高了充电率。
当然，在另一实施例中，像素电极13与源极122还可设置于同一层，像素电极13与源极122的侧面直接接触，如图2所示，图2的其他结构与图1一致，故不作赘述。此时，当源极122接收到数据线的信号时，直接通过侧面写入至像素电极13，提高了充电率。
进一步地，为增加像素电极的开口率，在该像素电极13还可与源极122的材料均为透明导电薄膜，如氧化铟锡（俗称ITO）。即可理解为，该TFT不设置源极层，而直接设置像素电极层，该像素电极13既作为TFT的源极122，通过沟道层接收数据线的信号，同时也作为像素电极13，作用与液晶层上，使其产生偏转，进而实现显示相应灰阶。
可以理解的是，除上述结构外，源极122与像素电极13还可通过其他结构实现直接接触，在此不作限定。
优选地，以上阵列基板实施例中，还可不设置钝化层，而直接在源极122、漏极123以及像素电极13上设置配向层14。该配向层14替代现有阵列基板上的钝化层，用于保护源极122、漏极123以及像素电极13不被氧化，而且，该配向层14也设置有配向方向，用于预倾角的固定。由于阵列基板无需设置钝化层，故节省了材料以及光罩制程，也使阵列基板实现更轻薄化。
需要说明的是，对于配向层14设置在源极122、漏极123以及像素电极13上的理解，应该为配向层14直接覆盖在像素电极13、漏极123的上表面，以及源极122的上表面中没有被像素电极13覆盖的部分。例如，若像素电极13完全覆盖源极122，则配向层14覆盖漏极123和像素电极13的上表面；若像素电极13与源极122同层，则配向层14覆盖源极122、漏极123和像素电极13的上表面。
另外，以上实施例均为源极与像素电极相连，但在其他漏极与像素电极相连的实施例中，该漏极与像素电极也可同理于以上结构实现漏极与像素电极之间不设置其他材料层而直接接触，在此也不作赘述。
本实施例中，TFT 12还包括叠置在所述栅极121上的栅绝缘层124、沟道层125，所述源极122和漏极123设置在所述沟道层125上。所述栅绝缘层124叠置在所述栅极121和沟道层125之间，以将所述栅极121和沟道层125绝缘。所述源极122和漏极123位于沟道层125上的同一层，当栅极121获得大于或等于开启电压的电压时，沟道层125感应出电子，使源极122和漏极123导通。其中，该栅绝缘层124可为氮化铝（化学式：AlN）薄膜，该沟道层125可由金属氧化物构成，例如为铟镓锌氧化物（英文：indium gallium zinc oxide，简称：IGZO）。具体，该沟道层125具体可包括非晶硅半导体层（英文：AS Island pattern）125a和掺杂层125b。
以上实施例中，基板11可以为玻璃基板或其他绝缘材料构成的透明基板。所述栅极121可由钼（Mo）层形成。所述源极122和漏极123可均由钼层、铝层、钼层叠置形成；或者，均由钼层、第一铜层、第二铜层、钼层，其中，该在沉积第一铜层时所需的功率大于沉积第二铜层时所需的功率。
本申请还提供一种显示面板的实施例，具体，该显示面板包括上面实施例中的阵列基板，故在此不作赘述。
请参阅图3，图3是本申请阵列基板的制成方法一实施方式的流程图。该阵列基板为上述实施例中的阵列基板，所述方法包括：
S31：在基板上形成TFT，其中，所述TFT包括栅极、源极和漏极。
如图4a-4d所示，先在基板41上形成栅极421，而后在栅极421上形成栅极绝缘层424，再在栅极绝缘层424上设置沟道层425，然后在所述沟道层425上分别形成源极422和漏极423，其中，该源极422和漏极423隔离设置。具体，上述栅极421、源极422和漏极423的图案均由蚀刻如湿刻、干刻等工艺而得到。
可选地，所述源极和漏极均由钼层、铝层、钼层叠置形成；或者，均由钼层、第一铜层、第二铜层、钼层，其中，该在沉积第一铜层时所需的功率大于沉积第二铜层时所需的功率。
S32：在所述TFT的栅极或源极上形成像素电极，其中，所述源极或漏极与所述像素电极之间不设置其他材料层而直接接触。
本实施例中，源极与像素电极相连，且像素电极设置在源极的上表面上。如图4e-4f所示，在源极422上形成像素电极43，其中，该像素电极43沉积在源极422的上表面，并图案化；然后，还可直接在该漏极423和像素43的表面涂覆配向层44，并可通过定向摩擦等方式设置配向方向，以同时作为钝化层和配向层。
当然，在其他实施例中，源极和像素电极可设置在同一层，例如图2所示，在形成源极之后，栅绝缘层上还形成像素电极，以与源极的侧面直接接触。
进一步地，当源极和像素电极均设置为透明导电膜时，在以上步骤中，该源极和像素电极可同时形成。
上述方案中，阵列基板中的源极或漏极与像素电极之间不设置其他材料层而直接接触，使得该源极或漏极与像素电极之间的阻值减小，在源极或漏极向像素电极写入电信号时，加快了写入速度，提高了充电电流，也提高了充电率。而且，由于本申请保证的一定充电率，故避免了现有由于充电率不足而引起的不良现象。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (16)

  1. 一种显示面板，其中，所述显示面板包括阵列基板，所述阵列基板包括基板以及设置在所述基板之上的TFT和像素电极，所述TFT包括栅极、源极和漏极；
    其中，所述源极或漏极与所述像素电极之间不设置其他材料层而直接接触。
  2. 根据权利要求1所述的显示面板，其中，所述像素电极设置在所述源极或漏极的表面上而形成直接接触。
  3. 根据权利要求1所述的显示面板，其中，所述像素电极与所述源极或漏极设置于同一层而直接接触。
  4. 根据权利要求3所述的显示面板，其中，所述像素电极与直接接触的所述源极或漏极的材料均为透明导电薄膜。
  5. 根据权利要求1所述的显示面板，其中，还包括覆盖在所述源极、漏极以及所述像素电极上的配向层。
  6. 根据权利要求1所述的显示面板，其中，所述TFT还包括叠置在所述栅极上的栅绝缘层、沟道层，所述源极和漏极设置在所述沟道层上。
  7. 一种阵列基板，其中，包括基板以及设置在所述基板之上的TFT和像素电极，所述TFT包括栅极、源极和漏极；
    其中，所述源极或漏极与所述像素电极之间不设置其他材料层而直接接触。
  8. 根据权利要求7所述的阵列基板，其中，所述像素电极设置在所述源极或漏极的表面上而形成直接接触。
  9. 根据权利要求7所述的阵列基板，其中，所述像素电极与所述源极或漏极设置于同一层而直接接触。
  10. 根据权利要求9所述的阵列基板，其中，所述像素电极与直接接触的所述源极或漏极的材料均为透明导电薄膜。
  11. 根据权利要求7所述的阵列基板，其中，还包括覆盖在所述源极、漏极以及所述像素电极上的配向层。
  12. 根据权利要求7所述的阵列基板，其中，所述TFT还包括叠置在所述栅极上的栅绝缘层、沟道层，所述源极和漏极设置在所述沟道层上。
  13. 一种阵列基板的制作方法，其中，包括：
    在基板上形成TFT，其中，所述TFT包括栅极、源极和漏极；
    在所述TFT的栅极或源极上形成像素电极，其中，所述源极或漏极与所述像素电极之间不设置其他材料层而直接接触。
  14. 根据权利要求13所述的制作方法，其中，所述在所述TFT的栅极或源极上形成像素电极的步骤包括：
    在所述源极或漏极的表面上形成像素电极；或者
    在所述源极或漏极的同一层上形成像素电极。
  15. 根据权利要求13所述的制作方法，其中，所述方法还包括：在所述源极、漏极以及所述像素电极上覆盖配向层。
  16. 根据权利要求14所述的制作方法，其中，所述方法还包括：在所述源极、漏极以及所述像素电极上覆盖配向层。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101211084A (zh) * 2006-12-29 2008-07-02 Lg.菲利浦Lcd株式会社 液晶显示板及其制造方法
CN103094354A (zh) * 2013-01-28 2013-05-08 合肥京东方光电科技有限公司 阵列基板及其制造方法、显示装置
CN103235456A (zh) * 2013-04-23 2013-08-07 合肥京东方光电科技有限公司 阵列基板及其制造方法和显示装置
CN103441128A (zh) * 2013-05-27 2013-12-11 南京中电熊猫液晶显示科技有限公司 一种tft阵列基板及其制造方法
CN103943636A (zh) * 2014-04-04 2014-07-23 深圳莱宝高科技股份有限公司 一种薄膜晶体管阵列基板及其制作方法
CN104570523A (zh) * 2015-01-16 2015-04-29 昆山龙腾光电有限公司 一种阵列基板、阵列基板的形成方法及液晶显示装置

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06208132A (ja) * 1990-03-24 1994-07-26 Sony Corp 液晶表示装置
DE69529493T2 (de) * 1994-06-20 2003-10-30 Canon Kk Anzeigevorrichtung und Verfahren zu ihrer Herstellung
US5994721A (en) * 1995-06-06 1999-11-30 Ois Optical Imaging Systems, Inc. High aperture LCD with insulating color filters overlapping bus lines on active substrate
JP3270361B2 (ja) * 1997-06-09 2002-04-02 日本電気株式会社 薄膜トランジスタアレイ及びその製造方法
US6320204B1 (en) * 1997-12-25 2001-11-20 Seiko Epson Corporation Electro-optical device in which an extending portion of a channel region of a semiconductor layer is connected to a capacitor line and an electronic apparatus including the electro-optical device
KR100325079B1 (ko) * 1999-12-22 2002-03-02 주식회사 현대 디스플레이 테크놀로지 고개구율 및 고투과율 액정표시장치의 제조방법
KR100491141B1 (ko) * 2001-03-02 2005-05-24 삼성에스디아이 주식회사 박막 트랜지스터 및 그의 제조방법과 이를 이용한 액티브매트릭스형 표시소자 및 그의 제조방법
JP4711595B2 (ja) * 2002-12-10 2011-06-29 株式会社半導体エネルギー研究所 Ｅｌディスプレイ及び電子機器
KR101227142B1 (ko) * 2006-05-17 2013-01-28 엘지디스플레이 주식회사 전계발광소자 및 그 제조방법
US20080048191A1 (en) * 2006-08-23 2008-02-28 Hyun Chul Son Organic light emitting display device and method of fabricating the same
TWI308805B (en) * 2006-09-22 2009-04-11 Innolux Display Corp Active matrix oled and fabricating method incorporating the same
KR101269002B1 (ko) * 2006-10-25 2013-05-29 엘지디스플레이 주식회사 횡전계 방식 액정표시장치용 어레이기판과 그 제조방법
KR101281167B1 (ko) * 2006-11-22 2013-07-02 삼성전자주식회사 유기발광 디스플레이의 단위 화소부 구동소자 및 그제조방법
KR101367140B1 (ko) * 2006-12-26 2014-03-14 삼성디스플레이 주식회사 표시장치와 그 제조방법
KR101015850B1 (ko) * 2009-02-09 2011-02-24 삼성모바일디스플레이주식회사 유기 발광 표시 장치 제조 방법
KR101747391B1 (ko) 2009-07-07 2017-06-15 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 이의 제조 방법
EP2518772A4 (en) * 2009-12-21 2016-09-07 Sharp Kk ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL AND PROCESS FOR PREPARING AN ACTIVE MATRIX SUBSTRATE
KR101254469B1 (ko) 2010-04-21 2013-04-15 샤프 가부시키가이샤 반도체 소자, 반도체 소자의 제조방법, 액티브 매트릭스 기판 및 표시장치
TWI427784B (zh) * 2010-07-16 2014-02-21 Au Optronics Corp 畫素結構的製造方法及有機發光元件的製造方法
JP5863399B2 (ja) * 2011-11-07 2016-02-16 三菱電機株式会社 配線構造及びそれを備える薄膜トランジスタアレイ基板並びに表示装置
CN102723334B (zh) * 2012-06-07 2015-04-08 南京中电熊猫液晶显示科技有限公司 一种金属氧化物薄膜晶体基板及其制造方法和液晶显示器
CN102956713B (zh) * 2012-10-19 2016-03-09 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板和显示装置
CN104022044B (zh) * 2013-03-01 2017-05-10 北京京东方光电科技有限公司 氧化物薄膜晶体管及其制备方法、阵列基板和显示装置
CN103258793A (zh) * 2013-03-29 2013-08-21 京东方科技集团股份有限公司 一种coa阵列基板的制备方法、阵列基板及显示装置
KR102094847B1 (ko) * 2013-07-03 2020-03-31 삼성디스플레이 주식회사 박막 트랜지스터를 포함하는 표시 기판 및 이의 제조 방법
CN104090401B (zh) * 2014-06-18 2017-12-29 京东方科技集团股份有限公司 阵列基板及其制备方法、显示装置
KR102224457B1 (ko) * 2014-08-06 2021-03-09 엘지디스플레이 주식회사 표시장치와 그 제조 방법
JP6358596B2 (ja) * 2014-11-27 2018-07-18 株式会社Ｊｏｌｅｄ 薄膜トランジスタ基板の製造方法
CN105097874B (zh) * 2015-06-01 2019-02-19 合肥鑫晟光电科技有限公司 一种oled显示器件及其制作方法、显示装置
CN105226015B (zh) * 2015-09-28 2018-03-13 深圳市华星光电技术有限公司 一种tft阵列基板及其制作方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101211084A (zh) * 2006-12-29 2008-07-02 Lg.菲利浦Lcd株式会社 液晶显示板及其制造方法
CN103094354A (zh) * 2013-01-28 2013-05-08 合肥京东方光电科技有限公司 阵列基板及其制造方法、显示装置
CN103235456A (zh) * 2013-04-23 2013-08-07 合肥京东方光电科技有限公司 阵列基板及其制造方法和显示装置
CN103441128A (zh) * 2013-05-27 2013-12-11 南京中电熊猫液晶显示科技有限公司 一种tft阵列基板及其制造方法
CN103943636A (zh) * 2014-04-04 2014-07-23 深圳莱宝高科技股份有限公司 一种薄膜晶体管阵列基板及其制作方法
CN104570523A (zh) * 2015-01-16 2015-04-29 昆山龙腾光电有限公司 一种阵列基板、阵列基板的形成方法及液晶显示装置

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