CN103258793A - 一种coa阵列基板的制备方法、阵列基板及显示装置 - Google Patents

一种coa阵列基板的制备方法、阵列基板及显示装置 Download PDF

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CN103258793A
CN103258793A CN2013101080901A CN201310108090A CN103258793A CN 103258793 A CN103258793 A CN 103258793A CN 2013101080901 A CN2013101080901 A CN 2013101080901A CN 201310108090 A CN201310108090 A CN 201310108090A CN 103258793 A CN103258793 A CN 103258793A
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齐永莲
舒适
惠官宝
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BOE Technology Group Co Ltd
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Abstract

本发明提供一种COA阵列基板的制备方法、阵列基板及显示装置，属于液晶显示技术领域，可以解决现有的阵列基板的制备方法复杂、成本较高的问题。本发明的阵列基板的制备方法，包括以下步骤：在TFT基底上的保护层上涂光刻胶层，所述光刻胶层同时作为平坦化层，其中TFT基底包括基底和薄膜晶体管；通过光刻工艺在光刻胶层中形成彩膜容纳孔；在彩膜容纳孔中制作彩色滤光层。本发明的阵列基板，包括位于保护层上的光刻胶层，所述光刻胶层同时作为平坦化层，且其中形成有彩膜容纳孔，彩膜容纳孔中形成有彩色滤光层。本发明的显示装置包括上述阵列基板。

Description

一种COA阵列基板的制备方法、阵列基板及显示装置
技术领域
本发明属于液晶显示技术领域，具体涉及一种COA阵列基板的制备方法、阵列基板及显示装置。 
背景技术
COA阵列基板是指将彩色滤光层13制作在TFT基底11（TFT基底包括基底111、薄膜晶体管（TFT）112）上，通过该设计，可以减小黑矩阵的宽度，提高显示区域的开口率，现有的COA阵列基板的结构如图1所示，图2为形成过孔15的曝光过程的示意图。 
目前将彩色滤光层制作在TFT基底上的方法主要通过构图工艺或喷墨打印法，目前采用的喷墨打印法均需要单独制作挡墙结构，在制作完彩色滤光层13（彩色滤光层制作需要在TFT基底上涂覆保护层12后，再通过构图工艺形成。）后再将挡墙去除，之后制作平坦化层14，形成COA阵列基板结构，同时还需要单独的构图工艺形成过孔15，因此该工艺过程复杂，生产效率低，成本较高。 
发明内容
本发明所要解决的技术问题包括，针对现有的阵列基板的制备方法复杂、生产效率低、成本较高的问题，提供一种可以减少制造工艺、降低成本，提高生产效率的阵列基板的制备方法、阵列基板及显示装置。 
解决本发明技术问题所采用的技术方案是一种COA阵列基板的制备方法，包括TFT基底和设置在TFT基底上的彩色滤光层，包括如下步骤：在TFT基底上的保护层上涂光刻胶层，所述光刻 胶层同时作为平坦化层；通过光刻工艺在光刻胶层中形成彩膜容纳孔；在彩膜容纳孔中制作彩色滤光层。 
本发明中光刻胶层的流动性好，故段差很小，所以光刻胶层可以同时作为平坦化层，通过构图工艺，将光刻胶层曝光、显影，形成包括彩膜容纳孔的图形，与现有的阵列基板的制备方法相比较不用单独制作平坦化层，故其工艺步骤简单，同时节约成本。 
优选的是，所述在彩膜容纳孔中制作彩色滤光层的方法为喷墨打印法。 
优选的是，还包括：在所述COA阵列基板上形成过孔。 
进一步优选的是，所述COA阵列基板为OLED阵列基板，所述在所述COA阵列基板上形成过孔包括：采用一次构图工艺形成彩膜容纳孔和第一通孔，所述第一通孔贯穿平坦层；对第一通孔区域的保护层进行刻蚀，形成露出薄膜晶体管的漏极的过孔；在彩色滤光层上制作OLED阳极，所述OLED阳极通过所述过孔与薄膜晶体管的漏极连接。 
进一步优选的是，所述阵列基板为TFT-LCD阵列基板，所述在所述COA阵列基板上形成过孔包括：采用一次构图工艺形成彩膜容纳孔和第一通孔，所述第一通孔贯穿平坦层；对第一通孔区域的保护层进行刻蚀，形成露出薄膜晶体管的漏极的过孔；在彩色滤光层上制作像素电极，所述像素电极通过所述过孔与薄膜晶体管的漏极连接。 
解决本发明技术问题所采用的技术方案是一种COA阵列基板，包括位于保护层12上的光刻胶层21，所述光刻胶层21同时作为平坦化层，且其中形成有彩膜容纳孔32，彩膜容纳孔32中形成有彩色滤光层13。 
由于本发明的阵列基板的光刻胶层不仅在其中形成彩膜容纳孔，同时又作为平坦化层，所以该阵列基板的成本低。 
优选的是，所述COA阵列基板为OLED基板，所述COA阵列基板上还设置有过孔，OLED阳极通过所述过孔与OLED基板上的薄膜晶体管的漏极连接。 
优选的是，所述阵列基板为TFT-LCD阵列基板，所述COA阵列基板上还设置有过孔，像素电极通过所述过孔与TFT-LCD阵列基板上的薄膜晶体管的漏极连接。 
解决本发明技术问题所采用的技术方案是一种显示装置，包括上述阵列基板。 
由于该显示装置包括上述阵列基板，所以成本低，制作工艺步骤简化。 
附图说明
图1为现有的COA阵列基板的示意图； 
图2为本发明实施例1的阵列基板制备方法中对COA阵列基板的光刻胶层曝光的示意图； 
图3为本发明实施例1的COA阵列基板制备方法中对COA阵列基板的光刻胶层曝光后的示意图； 
图4为本发明实施例1的COA阵列基板制备方法中制作COA阵列基板彩色滤光层的示意图；以及， 
图5为本发明实施例1的COA阵列基板制备方法中制作COA阵列基板上过孔的示意图。 
其中附图标记为：11、TFT基底；111、基底；112、薄膜晶体管；12、保护层；13、彩色滤光层；14、平坦化层；15、过孔；21、光刻胶层；22、掩膜板；31、第一通孔；32、彩膜容纳孔。 
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。 
实施例1： 
结合图3、图4、图5，本实施例提供一种COA阵 列基板的制备方法，包括： 
步骤1、首先在基底111上制作薄膜晶体管112、金属线等元器件，完成TFT基底11的制作，在TFT基底11上做一层保护层12，用于保护背板。 
步骤2、在保护层12上涂上光刻胶层21，通过构图工艺，用掩膜板22对光刻胶层21进行曝光，曝光区域为彩色像素区，曝光后对彩色像素区进行显影，后烘制作出彩膜容纳孔32，所述光刻胶层21同时作为平坦化层14。 
步骤3、为彩膜容纳孔32中添加染料，形成彩色滤光层13。其中，由于光刻胶层21的段差很小，所以光刻胶层21同时可以作为平坦化层14，进而无需制作平坦化层14，使得制作工艺简化，生产效率提高，成本降低。 
优选地，所述在彩膜容纳孔32中制作彩膜滤光层包括：采用喷墨法在所述彩膜容纳孔32中制作彩色滤光层13。由于，本实施例的方法中，通过构图工艺在对光刻胶层21曝光、显影制作彩膜容纳孔32，在制作彩膜容纳孔32出采用正性光刻胶，而在其他部分显影后光刻胶依然存在（若采用负性光刻胶对彩膜容纳孔32所在区域不进行光照，对其他部分经行光照，显影后其他部分显影后光刻胶依然存在），故剩余的光刻胶层21实际形成了挡墙，此时，采用喷墨法将制作彩色滤光层13，不用再单独制作挡墙，和现有的制备方法比较省去制作挡墙的步骤，可以大大提高生产效率、降低生产成本。 
优选地，该COA阵列基板为OLED阵列基板，在步骤2中还包括： 
采用一次构图工艺形成彩膜容纳孔32和第一通孔31，所述第一通孔31贯穿平坦层； 
对第一通孔31区域的保护层12进行刻蚀，形成露出薄膜晶体管112上的漏极的过孔15； 
在步骤3形成彩色滤光层13后，还包括：在彩色滤光层13上制作OLED阳极，所述OLED阳极通过所述过孔15与薄膜晶体 管112的漏极连接。 
当然也可以将OLED的阳极制作在TFT基底11上，OLED的阳极可以直接与薄膜晶体管112的漏极连接，此时就不需要通过构图工艺形成过孔15。 
优选地，所述阵列基板为TFT-LCD阵列基板，在步骤2中还包括： 
采用一次构图工艺形成彩膜容纳孔32和第一通孔31，所述第一通孔31贯穿平坦层； 
对第一通孔31区域的保护层12进行刻蚀，形成露出薄膜晶体管112的漏极的过孔15； 
在步骤3形成彩色滤光层13后，还包括：在彩色滤光层13上制作像素电极，所述像素电极通过所述过孔15与薄膜晶体管112的漏极连接。 
当然也可以将像素电极制作在TFT基底11上，像素电极可直接与薄膜晶体管112的漏极连接，这样也无需通过构图工艺形成过孔15。 
实施例2： 
本实施例提供一种阵列基板，包括位于保护层12上的光刻胶层21，所述光刻胶层21同时作为平坦化层14，且其中形成有彩膜容纳孔32，彩膜容纳孔32中形成有彩色滤光层13。光刻胶同时作为平坦化层14，在制作时可以节约成本。 
优选地，所述阵列基板为OLED基板，所述COA阵列基板上还设置有过孔15，阳极通过所述过孔15与OLED基板上的薄膜晶体管112的漏极连接。当然OLED也可以设在TFT基底11上，OLED阳极直接与薄膜晶体管112的漏极连接，该阵列基板就不用设有过孔15。 
优选地，所述阵列基板为TFT-LCD阵列基板，所述COA阵列基板上还设置有过孔15，像素电极通过所述过孔15与TFT-LCD阵列基板上的薄膜晶体管112的漏极连接。当然像素电极也可以 设在TFT基底11上，像素电极直接与薄膜晶体管112的漏极连接，该阵列基板就不用设有过孔15。 
本实施例的COA阵列基板可以通过实施例1所述的方法制备，不用制作平坦化层14，挡墙，具体说明就不再重复追述，所以该阵列基板的生产效率高，成本低。 
实施例3 
本实施例提供一种显示装置，该显示装置，包括上述阵列基板，当然也包括常规显示装置的外框等结构。 
由于该显示装置包括上述阵列基板，故其制作工艺简单、成本低。 
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。 

Claims (9)

1.一种COA阵列基板的制备方法，包括TFT基底和设置在TFT基底上的彩色滤光层，其特征在于，包括如下步骤：
在TFT基底上的保护层上涂光刻胶层，所述光刻胶层同时作为平坦化层，其中TFT基底包括基底和薄膜晶体管；
通过光刻工艺在光刻胶层中形成彩膜容纳孔；
在彩膜容纳孔中制作彩色滤光层。
2.根据权利要求1所述的COA阵列基板的制备方法，其特征在于，所述在彩膜容纳孔中制作彩色滤光层的方法为喷墨打印法。
3.根据权利要求1所述的COA阵列基板的制备方法，其特征在于，
还包括：在所述COA阵列基板上形成过孔。
4.根据权利要求3所述的COA阵列基板的制备方法，其特征在于，所述COA阵列基板为OLED阵列基板，所述在所述COA阵列基板上形成过孔包括：
采用一次构图工艺形成彩膜容纳孔和第一通孔，所述第一通孔贯穿平坦层；
对第一通孔区域的保护层进行刻蚀，形成露出驱动薄膜晶体管漏极的过孔；
在彩色滤光层上制作OLED阳极，所述OLED阳极通过所述过孔与薄膜晶体管的漏极电连接。
5.根据权利要求3所述的制备方法，其特征在于，所述阵列基板为TFT-LCD阵列基板，所述在所述COA阵列基板上形成过孔包括：
采用一次构图工艺形成彩膜容纳孔和第一通孔，所述第一通孔贯穿平坦层；
对第一通孔区域的保护层进行刻蚀，形成露出薄膜晶体管漏极的过孔；
在彩色滤光层上制作像素电极，所述像素电极通过所述过孔与像素TFT的漏极电连接。
6.一种COA阵列基板，包括位于保护层上的光刻胶层，所述光刻胶层同时作为平坦化层，且其中形成有彩膜容纳孔，彩膜容纳孔中形成有彩色滤光层。
7.根据权利要求6所述的COA阵列基板，其特征在于，所述COA阵列基板为OLED基板，所述COA阵列基板上还设置有过孔，阳极通过所述过孔与OLED基板上的薄膜晶体管的漏极电连接。
8.根据权利要求6所述的COA阵列基板，其特征在于，所述COA阵列基板为TFT-LCD阵列基板，所述COA阵列基板上还设置有过孔，像素电极通过所述过孔与TFT-LCD阵列基板上的薄膜晶体管的漏极电连接。
9.一种显示装置，其特征在于，包括权利要求6～8任一所述的COA阵列基板。
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