WO2017081901A1 - 波長変換部材の製造方法及び波長変換部材 - Google Patents
波長変換部材の製造方法及び波長変換部材 Download PDFInfo
- Publication number
- WO2017081901A1 WO2017081901A1 PCT/JP2016/073596 JP2016073596W WO2017081901A1 WO 2017081901 A1 WO2017081901 A1 WO 2017081901A1 JP 2016073596 W JP2016073596 W JP 2016073596W WO 2017081901 A1 WO2017081901 A1 WO 2017081901A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- inorganic
- protective film
- wavelength conversion
- conversion member
- glass
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 88
- 230000001681 protective effect Effects 0.000 claims abstract description 74
- 239000000843 powder Substances 0.000 claims abstract description 28
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims description 107
- 239000011159 matrix material Substances 0.000 claims description 20
- 239000011241 protective layer Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 14
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 28
- 238000010304 firing Methods 0.000 abstract description 16
- 239000002105 nanoparticle Substances 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 239000002612 dispersion medium Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 3
- 239000011258 core-shell material Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- -1 alkoxide compound Chemical class 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000003301 hydrolyzing effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical compound [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/23—Silica-free oxide glass compositions containing halogen and at least one oxide, e.g. oxide of boron
- C03C3/247—Silica-free oxide glass compositions containing halogen and at least one oxide, e.g. oxide of boron containing fluorine and phosphorus
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/04—Particles; Flakes
- C03C2214/05—Particles; Flakes surface treated, e.g. coated
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/16—Microcrystallites, e.g. of optically or electrically active material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Definitions
- the present invention relates to a method for manufacturing a wavelength conversion member and a wavelength conversion member.
- inorganic nanophosphor particles have the property of being easily deteriorated when they come into contact with moisture or oxygen in the air. For this reason, it is necessary to seal the inorganic nanophosphor particles so as not to contact the external environment.
- a resin is used as the sealing material, there is a problem that when the wavelength of excitation light is converted by the phosphor, a part of the energy is converted into heat, so that the resin is discolored by the heat. Further, since the resin is inferior in water resistance and easily penetrates moisture, there is a problem that the phosphor is easily deteriorated.
- Patent Document 1 proposes a wavelength conversion member using glass instead of resin as a sealing material. Specifically, Patent Document 1 proposes a wavelength conversion member using glass as a sealing material by firing a mixture containing inorganic nanophosphor particles and glass powder.
- An object of the present invention is to provide a method for producing a wavelength conversion member and a wavelength conversion member that can suppress the reaction between the inorganic nanophosphor particles and glass and suppress the deterioration of the inorganic nanophosphor particles.
- the method for producing a wavelength conversion member of the present invention comprises a step of forming an inorganic protective film on the surface of the inorganic nanophosphor particle, a mixture of the inorganic nanophosphor particle formed with the inorganic protective film and glass powder, and the inorganic protective film And a step of firing in the remaining temperature region.
- the inorganic protective film is preferably a SiO 2 based protective film.
- an inorganic protective film may be formed on the surface of an aggregate composed of a plurality of inorganic nanophosphor particles.
- an inorganic protective film can be formed by attaching a sol solution for forming an inorganic protective film to the surface of the inorganic nanophosphor particles and then drying.
- the temperature range for firing is preferably 350 ° C. or lower.
- the glass powder in the present invention comprises SnO—P 2 O 5 glass, SnO—P 2 O 5 —B 2 O 3 glass, SnO—P 2 O 5 —F glass, and Bi 2 O 3 glass. It is preferably at least one selected from the group.
- the wavelength conversion member of the present invention is provided between an inorganic nanophosphor particle, a glass matrix in which the inorganic nanophosphor particle is dispersed, and between the inorganic nanophosphor particle and the glass matrix, and has a composition different from that of the glass matrix.
- An inorganic protective layer is provided.
- the inorganic protective layer is preferably a SiO 2 -based protective layer.
- the inorganic protective layer may be provided between an aggregate composed of a plurality of inorganic nanophosphor particles and a glass matrix.
- the reaction between the inorganic nanophosphor particles and the glass can be suppressed, and deterioration of the inorganic nanophosphor particles can be suppressed.
- FIG. 1 is a schematic cross-sectional view showing a wavelength conversion member according to an embodiment of the present invention.
- FIG. 2 is a schematic cross-sectional view showing inorganic nanophosphor particles having an inorganic protective film formed on the surface.
- FIG. 1 is a schematic cross-sectional view showing a wavelength conversion member according to an embodiment of the present invention.
- the wavelength conversion member 10 of the present embodiment includes an inorganic nanophosphor particle 1, a glass matrix 4 in which the inorganic nanophosphor particle 1 is dispersed, an inorganic nanophosphor particle 1 and a glass matrix 4.
- an inorganic protective layer 2 having a composition different from that of the glass matrix 4.
- an inorganic protective layer 2 is formed on the surface of an aggregate composed of a plurality of inorganic nanophosphor particles 1 to form a protective layer-attached phosphor particle 3. Therefore, the wavelength conversion member 10 is configured by dispersing the protective layer-attached phosphor particles 3 in the glass matrix 4.
- FIG. 2 is a schematic cross-sectional view showing inorganic nanophosphor particles having an inorganic protective film formed on the surface.
- the protective film-attached phosphor particles 6 shown in FIG. 2 are formed by forming an inorganic protective film 5 on the surface of the inorganic nanophosphor particles 1.
- an inorganic protective film 5 is formed on the surface of an aggregate composed of a plurality of inorganic nanophosphor particles 1.
- the inorganic protective film 5 becomes the inorganic protective layer 2 in FIG. 1 by baking.
- the protective film-attached phosphor particles 6 become the protective layer-attached phosphor particles 3 in FIG. 1 by firing.
- the protective film-attached phosphor particles 6 are produced by forming the inorganic protective film 5 on the surface of the inorganic nanophosphor particles 1.
- inorganic nanophosphor particles phosphor particles made of inorganic crystals having a particle size of less than 1 ⁇ m can be used.
- inorganic nanophosphor particles generally called semiconductor nanoparticles or quantum dots can be used.
- semiconductor of such inorganic nanophosphor particles include II-VI group compounds and III-V group compounds.
- II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe and the like.
- III-V group compounds include InP, GaN, GaAs, GaP, AlN, AlP, AlSb, InN, InAs, InSb, and the like. At least one selected from these compounds, or a composite of two or more of these can be used as the inorganic nanophosphor particles of the present invention.
- the composite include those having a core-shell structure, such as those having a core-shell structure in which the surface of CdSe particles is coated with ZnS.
- the particle size of the inorganic nanophosphor particle 1 is appropriately selected within a range of, for example, 100 nm or less, 50 nm or less, particularly 1 to 30 nm, 1 to 15 nm, or even 1.5 to 12 nm.
- the inorganic protective film 5 is formed on the surface of the aggregate composed of the plurality of inorganic nanophosphor particles 1.
- the size of the aggregate is preferably 20 to 1000 nm, and more preferably 100 to 700 nm, as its diameter.
- the inorganic protective film 5 is formed on the surface of the aggregate.
- the present invention is not limited to this, and the inorganic protective film 5 is formed on the surface of the single inorganic nanophosphor particle 1. It may be formed.
- the inorganic protective film 5 suppresses the reaction between the glass matrix 4 and the inorganic nanophosphor particles 1 when the protective film-attached phosphor particles 6 and the glass powder are mixed and the glass powder is baked to form the glass matrix 4.
- the inorganic protective film 5 include oxide protective films such as a SiO 2 protective film and a ZrO 2 protective film.
- the amount of the inorganic protective film 5 attached to the inorganic nanophosphor particles 1 is preferably 37 to 4.5 ⁇ 10 6 volume parts of the inorganic protective film 5 attached to 1 volume part of the inorganic nanophosphor particles 1. 1.0 ⁇ 10 3 to 3.0 ⁇ 10 6 volume parts are more preferable, and 4.5 ⁇ 10 3 to 1.6 ⁇ 10 6 volume parts are more preferable. If the adhesion amount of the inorganic protective film 5 is too small, the reaction between the glass matrix 4 and the inorganic nanophosphor particles 1 may not be sufficiently suppressed. On the other hand, when the adhesion amount of the inorganic protective film 5 is too large, the emission intensity of the inorganic nanophosphor particles 1 may be reduced.
- the inorganic protective film 5 can be attached to the surface of the inorganic nanophosphor particle 1 by, for example, bringing the sol solution prepared by the sol-gel method into contact with the inorganic nanophosphor particle 1 and then drying it.
- a method of bringing the sol solution and the inorganic nanophosphor particles 1 into contact a method of adding the inorganic nanophosphor particles 1 to the sol solution and mixing them can be mentioned.
- the sol solution can be prepared by hydrolyzing the metal alkoxide compound using an acid or a base.
- a SiO 2 -based sol solution is prepared by hydrolyzing a silicon alkoxide compound such as tetraethoxysilane or tetramethoxysilane.
- the inorganic nanophosphor particles 1 on which the inorganic protective film 5 is formed that is, the protective film-attached phosphor particles 6 are mixed with the glass powder.
- the protective film-attached phosphor particles 6 become the protective layer-attached phosphor particles 3, and the wavelength conversion member 10 in which the protective layer-attached phosphor particles 3 are uniformly dispersed in the glass matrix 4 is manufactured. Can do.
- a method for mixing the protective film-attached phosphor particles 6 and the glass powder a method in which glass powder is added to the liquid in which the protective film-attached phosphor particles 6 are dispersed, Examples thereof include a method of infiltrating a powder preform.
- the preform of glass powder include a green compact formed by pressurizing and heating glass powder.
- the dispersion medium for dispersing the protective film-attached phosphor particles 6 is not particularly limited as long as the protective film-attached phosphor particles 6 can be dispersed.
- a non-polar solvent having appropriate volatility such as hexane and octane is preferably used. However, it is not limited to these and may be a polar solvent having appropriate volatility.
- Calcination is performed in a temperature region where the inorganic protective film 5 of the protective film-attached phosphor particles 6 remains as the inorganic protective layer 2.
- the firing temperature is preferably 350 ° C. or less, more preferably 300 ° C. or less, and further preferably 250 ° C. or less.
- the firing atmosphere is preferably a vacuum atmosphere or an inert atmosphere using nitrogen or argon. Thereby, deterioration and coloring of glass powder can be suppressed at the time of sintering. In particular, in a vacuum atmosphere, generation of bubbles in the wavelength conversion member 10 can be suppressed.
- the glass powder preferably has a low softening point. Specifically, it is preferable to use a glass powder made of glass having a softening point of 350 ° C. or lower, more preferably 300 ° C. or lower, more preferably 250 ° C. or lower.
- glass powder examples include SnO—P 2 O 5 glass, SnO—P 2 O 5 —B 2 O 3 glass, SnO—P 2 O 5 —F glass, and Bi 2 O 3 glass. Can be mentioned.
- SnO—P 2 O 5 glass a glass composition containing SnO 40 to 85% and P 2 O 5 15 to 60% in terms of mol%, particularly SnO 60 to 80%, P 2 O 5 Those containing 20 to 40% are preferred.
- the SnO—P 2 O 5 —B 2 O 3 -based glass contains SnO 35 to 80%, P 2 O 5 5 to 40%, and B 2 O 3 1 to 30% in terms of glass composition. Those are preferred.
- Al 2 O 3 0 to 10%, SiO 2 0 to 10%, Li 2 O 0 are further included as optional components.
- components that improve weather resistance such as Ta 2 O 5 , TiO 2 , Nb 2 O 5 , Gd 2 O 3 , La 2 O 3 , components that stabilize glass such as ZnO, etc. Can further be included.
- cation% is P 5+ 10 to 70%
- anion% is O 2 ⁇ 30 to 100%
- B 3+ , Si 4+ , Al 3+ , Zn 2+ or Ti 4+ may be contained in a total amount of 0 to 50%.
- the Bi 2 O 3 based glass as a glass composition, in mass%, Bi 2 O 3 10 ⁇ 90%, those containing 2 O 3 10 ⁇ 30% B is preferred. Furthermore, 0 to 30% of SiO 2 , Al 2 O 3 , B 2 O 3 , and P 2 O 5 may be contained as glass forming components, respectively.
- the molar ratio of SnO to P 2 O 5 is preferably within the range of 0.9 to 16, more preferably within the range of 1.5 to 10, and even more preferably within the range of 2 to 5.
- the molar ratio (SnO / P 2 O 5 ) is too small, firing at a low temperature becomes difficult, and the inorganic nanophosphor particles may be easily deteriorated during sintering. Also, the weather resistance may be too low.
- the molar ratio (SnO / P 2 O 5 ) is too large, the glass tends to be devitrified, and the transmittance of the glass may be too low.
- the average particle diameter D50 of the glass powder is preferably from 0.1 to 100 ⁇ m, particularly preferably from 1 to 50 ⁇ m. If the average particle diameter D50 of the glass powder is too small, bubbles are likely to be generated during sintering. For this reason, the mechanical strength of the wavelength conversion member obtained may fall. In addition, light scattering loss may increase due to bubbles generated in the wavelength conversion member, and the light emission efficiency may decrease. On the other hand, if the average particle diameter D50 of the glass powder is too large, the inorganic nanophosphor particles are difficult to be uniformly dispersed in the glass matrix, and as a result, the luminous efficiency of the obtained wavelength conversion member may be lowered.
- the average particle diameter D50 of the glass powder can be measured with a laser diffraction particle size distribution measuring apparatus.
- the wavelength conversion member 10 shown in FIG. 1 can be manufactured.
- Example 1 As the inorganic nanophosphor particles, those having a core-shell structure of CdSe (core) / ZnS (shell) and particle sizes of 3 nm (green) and 6 nm (red) were used. The inorganic nanophosphor particles were adjusted to 3 ⁇ M in toluene, tetraethoxysilane was added to 0.02 ⁇ M, and the mixture was stirred for 20 hours.
- the glass powder has a composition of cation%, Sn 2+ 56.3%, P 5+ 43.8%, anion%, F ⁇ 24.8%, O 2 ⁇ 75.2%, and an average particle diameter D50 Was 4 ⁇ m, and a glass powder having a softening point of 180 ° C. was used.
- This glass powder was heated and pressurized to produce a green compact as a preform.
- the green compact was infiltrated with a dispersion containing 20% by mass of the protective film-attached phosphor particles in toluene as a dispersion medium, and then the dispersion medium was removed, whereby the protective film-attached phosphor particles were mixed.
- a glass powder preform was produced.
- the preform was fired in a vacuum atmosphere at a firing temperature of 150 ° C. to produce a wavelength conversion member.
- Example 2 Without preparing the protective film-attached phosphor particles, the inorganic nanophosphor particles are dispersed as they are so as to be contained in 20% by mass in toluene as a dispersion medium, and a dispersion liquid is prepared.
- a preform was prepared by mixing in the green compact. This preform was fired in the same manner as in Example 1 to produce a wavelength conversion member.
- Example 1 the color of the obtained wavelength conversion member is the same as that of the inorganic nanophosphor particles, whereas the wavelength conversion member of Comparative Example 1 has a color of the inorganic nanophosphor particles fired. Disappeared.
- the wavelength conversion member of Comparative Example 2 had the same color as the inorganic nanophosphor particles.
- Example 1 When each wavelength conversion member was irradiated with excitation light (wavelength 465 nm), light emission was observed from the wavelength conversion member of Example 1, but no light emission was observed from the wavelength conversion member of Comparative Example 1. Although light emission was observed from the wavelength conversion member of Comparative Example 2, the light emission intensity was lower than that of Example 1. As described above, in Example 1, it was possible to suppress deterioration of the inorganic nanophosphor particles due to firing and reaction with glass.
- Example 1 On the glass plate which has the same glass composition as the glass powder used in Example 1, the sol solution prepared in Example 1 was applied to form an inorganic protective film having a thickness of 20 nm. The glass plate on which the inorganic protective film was formed was fired at the same temperature of 150 ° C. as in Example 1. After firing, it was confirmed that the inorganic protective film remained as an inorganic protective layer on the glass plate.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Luminescent Compositions (AREA)
- Glass Compositions (AREA)
- Led Device Packages (AREA)
- Optical Filters (AREA)
Abstract
Description
(実施例1)
無機ナノ蛍光体粒子として、CdSe(コア)/ZnS(シェル)のコアシェル構造を有し、粒径が3nm(緑色)と6nm(赤色)のものを用いた。トルエンに無機ナノ蛍光体粒子が3μMとなる様に調整し、テトラエトキシシランを0.02μMとなる様に添加し20時間攪拌を行った。続けて、トルエン10mlにエーロゾルOTを1.5gを添加、混合した後、上記の無機ナノ蛍光体粒子の溶液を0.3ml加え、さらに6.25質量%のアンモニア水溶液を0.3ml加え、テトラエトキシシランを20μl加えて20時間攪拌した。その後、50℃の温度で乾燥し、保護膜付着蛍光体粒子を作製した。得られた保護膜付着蛍光体粒子においては、約1個~5個の無機ナノ蛍光体粒子からなる凝集体が無機保護膜で被覆されていた。凝集体の平均粒子径は、200nmであった。また、無機ナノ蛍光体粒子の1体積部に対し、無機保護膜が約4.5×103~1.3×105体積部付着していた。
焼成温度を500℃とする以外は、実施例1と同様にして、波長変換部材を製造した。
保護膜付着蛍光体粒子を作製せずに、無機ナノ蛍光体粒子のまま、分散媒としてのトルエン中に20質量%含まれるように分散させて分散液を調製し、この分散液を、実施例1と同様にして圧粉体に混入させて予備成形体を作製した。この予備成形体を、実施例1と同様にして焼成し、波長変換部材を製造した。
実施例1では、得られた波長変換部材の色が、無機ナノ蛍光体粒子と同じ色をしているのに対して、比較例1の波長変換部材は、無機ナノ蛍光体粒子の色が焼成により消滅した。比較例2の波長変換部材は、無機ナノ蛍光体粒子と同じ色をしていた。
実施例1で用いたガラス粉末と同じガラス組成を有するガラス板の上に、実施例1で調製したゾル溶液を塗布し、厚さ20nmの無機保護膜を形成した。無機保護膜を形成したガラス板を、実施例1と同じ150℃の温度で焼成した。焼成後、ガラス板の上に無機保護膜が無機保護層として残存していることを確認した。
2…無機保護層
3…保護層付着蛍光体粒子
4…ガラスマトリクス
5…無機保護膜
6…保護膜付着蛍光体粒子
10…波長変換部材
Claims (9)
- 無機ナノ蛍光体粒子の表面に無機保護膜を形成する工程と、
前記無機保護膜を形成した前記無機ナノ蛍光体粒子とガラス粉末を混合し、前記無機保護膜が残存する温度領域で焼成する工程とを備える、波長変換部材の製造方法。 - 前記無機保護膜が、SiO2系保護膜である、請求項1に記載の波長変換部材の製造方法。
- 複数の前記無機ナノ蛍光体粒子からなる凝集体の表面に前記無機保護膜を形成する、請求項1または2に記載の波長変換部材の製造方法。
- 前記無機保護膜を形成するためのゾル溶液を、前記無機ナノ蛍光体粒子の表面に付着させた後、乾燥することにより前記無機保護膜を形成する、請求項1~3のいずれか一項に記載の波長変換部材の製造方法。
- 前記温度領域が、350℃以下である、請求項1~4のいずれか一項に記載の波長変換部材の製造方法。
- 前記ガラス粉末が、SnO-P2O5系ガラス、SnO-P2O5-B2O3系ガラス、SnO-P2O5-F系ガラス、及びBi2O3系ガラスからなるグループより選ばれる少なくとも1種である、請求項1~5のいずれか一項に記載の波長変換部材の製造方法。
- 無機ナノ蛍光体粒子と、
前記無機ナノ蛍光体粒子が分散されたガラスマトリクスと、
前記無機ナノ蛍光体粒子と前記ガラスマトリクスとの間に設けられ、前記ガラスマトリクスと異なる組成を有する無機保護層とを備える、波長変換部材。 - 前記無機保護層が、SiO2系保護層である、請求項7に記載の波長変換部材。
- 前記無機保護層が、複数の前記無機ナノ蛍光体粒子からなる凝集体と前記ガラスマトリクスとの間に設けられている、請求項7または8に記載の波長変換部材。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201680064516.XA CN108352431A (zh) | 2015-11-13 | 2016-08-10 | 波长转换部件的制造方法和波长转换部件 |
US15/766,017 US20180305243A1 (en) | 2015-11-13 | 2016-08-10 | Method for manufacturing wavelength conversion member and wavelength conversion member |
KR1020187007074A KR20180082422A (ko) | 2015-11-13 | 2016-08-10 | 파장 변환 부재의 제조 방법 및 파장 변환 부재 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-222791 | 2015-11-13 | ||
JP2015222791A JP6575314B2 (ja) | 2015-11-13 | 2015-11-13 | 波長変換部材の製造方法及び波長変換部材 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017081901A1 true WO2017081901A1 (ja) | 2017-05-18 |
Family
ID=58694979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/073596 WO2017081901A1 (ja) | 2015-11-13 | 2016-08-10 | 波長変換部材の製造方法及び波長変換部材 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180305243A1 (ja) |
JP (1) | JP6575314B2 (ja) |
KR (1) | KR20180082422A (ja) |
CN (1) | CN108352431A (ja) |
TW (1) | TW201724577A (ja) |
WO (1) | WO2017081901A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110997869A (zh) * | 2017-07-19 | 2020-04-10 | 三菱化学株式会社 | 氮化物荧光体和氮化物荧光体的制造方法 |
EP3719101A4 (en) * | 2017-11-30 | 2021-08-11 | Dexerials Corporation | COATED PHOSPHORUS, PROCESS FOR PRODUCING IT, PHOSPHORUS SHEET, AND ELECTROLUMINESCENT DEVICE |
US11795390B2 (en) | 2017-11-30 | 2023-10-24 | Dexerials Corporation | Coated phosphor method for producing same, phosphor sheet, and light-emitting device |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018198871A1 (ja) | 2017-04-27 | 2018-11-01 | 株式会社神戸製鋼所 | 積層造形部品の接合方法及び構造体、並びに積層造形部品 |
KR102017797B1 (ko) * | 2017-11-21 | 2019-09-03 | 중앙대학교 산학협력단 | CsPbBr3/PbSe 나노 복합체 합성 |
CN108329914A (zh) * | 2018-04-17 | 2018-07-27 | 温州大学 | 一种荧光晶体颗粒的制备方法 |
KR102149988B1 (ko) | 2018-09-07 | 2020-08-31 | 대주전자재료 주식회사 | 파장 변환 부재 제조용 적층체 및 파장 변환 부재의 제조방법 |
KR102279781B1 (ko) * | 2019-04-16 | 2021-07-20 | 한국광기술원 | 내습성이 뛰어난 형광체 및 형광체 제조 장치 |
CN110041931B (zh) * | 2019-04-19 | 2022-04-15 | 中国计量大学 | 一种近红外荧光薄膜及其制备方法、近红外led |
CN111694179A (zh) * | 2020-06-02 | 2020-09-22 | 深圳市华星光电半导体显示技术有限公司 | 一种显示装置及其制备方法 |
KR102471078B1 (ko) * | 2020-12-24 | 2022-11-28 | 공주대학교 산학협력단 | 발광 나노입자를 포함하는 유리복합체 및 이를 이용한 led 소자 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010083704A (ja) * | 2008-09-30 | 2010-04-15 | Toyoda Gosei Co Ltd | 蛍光体含有ガラス及びその製造方法 |
JP2012509604A (ja) * | 2008-11-19 | 2012-04-19 | ナノコ テクノロジーズ リミテッド | 半導体ナノ粒子を用いた発光デバイス、関連材料及び方法 |
JP2012087162A (ja) * | 2010-10-15 | 2012-05-10 | Nippon Electric Glass Co Ltd | 波長変換部材およびそれを用いてなる光源 |
JP2013033916A (ja) * | 2011-06-28 | 2013-02-14 | Sharp Corp | 発光装置及びその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0764135A (ja) * | 1993-08-26 | 1995-03-10 | Kirin Brewery Co Ltd | 光機能性有機化合物を含有するガラスおよびその製造法 |
JP4410877B2 (ja) * | 1999-07-29 | 2010-02-03 | 株式会社住田光学ガラス | 低融点ガラス |
DE102005023134A1 (de) * | 2005-05-19 | 2006-11-23 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Lumineszenzkonversions-LED |
JP4930830B2 (ja) * | 2006-07-27 | 2012-05-16 | 日亜化学工業株式会社 | 発光装置 |
US7615506B2 (en) * | 2006-10-06 | 2009-11-10 | Corning Incorporated | Durable tungsten-doped tin-fluorophosphate glasses |
JP4868427B2 (ja) * | 2008-11-13 | 2012-02-01 | 国立大学法人名古屋大学 | 半導体発光装置 |
DE102010009456A1 (de) * | 2010-02-26 | 2011-09-01 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement mit einem Halbleiterchip und einem Konversionselement und Verfahren zu dessen Herstellung |
JP5874425B2 (ja) * | 2012-02-13 | 2016-03-02 | コニカミノルタ株式会社 | 波長変換素子及びその製造方法、発光装置及びその製造方法 |
US10578257B2 (en) * | 2014-07-28 | 2020-03-03 | Lumileds Llc | Silica coated quantum dots with improved quantum efficiency |
KR102542426B1 (ko) * | 2017-12-20 | 2023-06-12 | 삼성전자주식회사 | 파장변환 필름과, 이를 구비한 반도체 발광장치 |
-
2015
- 2015-11-13 JP JP2015222791A patent/JP6575314B2/ja not_active Expired - Fee Related
-
2016
- 2016-08-10 CN CN201680064516.XA patent/CN108352431A/zh active Pending
- 2016-08-10 WO PCT/JP2016/073596 patent/WO2017081901A1/ja active Application Filing
- 2016-08-10 US US15/766,017 patent/US20180305243A1/en not_active Abandoned
- 2016-08-10 KR KR1020187007074A patent/KR20180082422A/ko unknown
- 2016-09-09 TW TW105129228A patent/TW201724577A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010083704A (ja) * | 2008-09-30 | 2010-04-15 | Toyoda Gosei Co Ltd | 蛍光体含有ガラス及びその製造方法 |
JP2012509604A (ja) * | 2008-11-19 | 2012-04-19 | ナノコ テクノロジーズ リミテッド | 半導体ナノ粒子を用いた発光デバイス、関連材料及び方法 |
JP2012087162A (ja) * | 2010-10-15 | 2012-05-10 | Nippon Electric Glass Co Ltd | 波長変換部材およびそれを用いてなる光源 |
JP2013033916A (ja) * | 2011-06-28 | 2013-02-14 | Sharp Corp | 発光装置及びその製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110997869A (zh) * | 2017-07-19 | 2020-04-10 | 三菱化学株式会社 | 氮化物荧光体和氮化物荧光体的制造方法 |
CN110997869B (zh) * | 2017-07-19 | 2023-12-29 | 三菱化学株式会社 | 氮化物荧光体和氮化物荧光体的制造方法 |
EP3719101A4 (en) * | 2017-11-30 | 2021-08-11 | Dexerials Corporation | COATED PHOSPHORUS, PROCESS FOR PRODUCING IT, PHOSPHORUS SHEET, AND ELECTROLUMINESCENT DEVICE |
US11613696B2 (en) | 2017-11-30 | 2023-03-28 | Dexerials Corporation | Coated phosphor, method for producing same, phosphor sheet, and light-emitting device |
US11795390B2 (en) | 2017-11-30 | 2023-10-24 | Dexerials Corporation | Coated phosphor method for producing same, phosphor sheet, and light-emitting device |
Also Published As
Publication number | Publication date |
---|---|
CN108352431A (zh) | 2018-07-31 |
TW201724577A (zh) | 2017-07-01 |
KR20180082422A (ko) | 2018-07-18 |
US20180305243A1 (en) | 2018-10-25 |
JP6575314B2 (ja) | 2019-09-18 |
JP2017088781A (ja) | 2017-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6575314B2 (ja) | 波長変換部材の製造方法及び波長変換部材 | |
US10836958B2 (en) | Wavelength conversion member | |
TWI738917B (zh) | 無機奈米螢光體粒子複合體及波長轉換構件 | |
WO2016035543A1 (ja) | 波長変換部材の製造方法及び波長変換部材 | |
KR101806054B1 (ko) | 형광체 분산 유리 | |
KR101785798B1 (ko) | 형광체 분산 유리 | |
JP7290108B2 (ja) | ナノ蛍光体付着無機粒子及び波長変換部材 | |
JP2014241431A (ja) | 発光装置の製造方法 | |
US9434876B2 (en) | Phosphor-dispersed glass | |
WO2013001971A1 (ja) | ガラス組成物、発光素子被覆用ガラス、発光素子被覆用複合材料、蛍光体複合材料、発光素子被覆複合部材、及び蛍光体複合部材 | |
JP2012087162A (ja) | 波長変換部材およびそれを用いてなる光源 | |
TW201728736A (zh) | 波長轉換構件之製造方法 | |
KR101593582B1 (ko) | 양자점이 형성된 색변환용 유리 복합체, 이의 제조방법 및 백색광 led 소자 | |
KR102313931B1 (ko) | 형광체 부착 유리 분말 및 파장 변환 부재의 제조 방법 그리고 파장 변환 부재 | |
JP2019019011A (ja) | 波長変換材料に用いられるガラス、波長変換材料、波長変換部材及び発光デバイス | |
JP2022521153A (ja) | Spsによって製造された蛍光体分散ガラス(pig)における黒ずみの低減方法 | |
JP2019045713A (ja) | 波長変換部材の製造方法 | |
JP2018106131A (ja) | 無機ナノ蛍光体粒子含有樹脂粉末 | |
JP2019019012A (ja) | 波長変換材料に用いられるガラス、波長変換材料、波長変換部材及び発光デバイス |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16863865 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20187007074 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15766017 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16863865 Country of ref document: EP Kind code of ref document: A1 |