TWI738917B - 無機奈米螢光體粒子複合體及波長轉換構件 - Google Patents
無機奈米螢光體粒子複合體及波長轉換構件 Download PDFInfo
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Abstract
本發明提供一種於密封於玻璃中時可抑制無機奈米螢光體粒子之劣化之無機奈米螢光體粒子複合體、及使用其之波長轉換構件。 本發明之無機奈米螢光體粒子複合體1之特徵在於:其係具備無機奈米螢光體粒子2、及附著於無機奈米螢光體粒子2之表面之無機微粒子3而成。
Description
本發明係關於一種無機奈米螢光體粒子複合體、及使用其之波長轉換構件。
近年來,研究一種發光裝置,其使用藉由如下方式而產生之螢光作為照明光:使用發光二極體(LED)或半導體雷射(LD)等激發光源,對螢光體照射自該等激發光源產生之激發光。又,研究使用量子點等無機奈米螢光體粒子作為螢光體。量子點藉由改變其直徑,可調整螢光波長,具有較高之發光效率(例如,參照專利文獻1~3)。 無機奈米螢光體粒子具有若與大氣中之水分或氧接觸則容易劣化之性質。因此,無機奈米螢光體粒子係以不與外部環境接觸之方式,藉由樹脂等進行密封而使用。然而,於使用樹脂作為密封材料之情形時,存在樹脂因藉由激發光之照射而自無機奈米螢光體粒子產生之熱而發生變色之問題。又,樹脂由於耐水性較差,容易使水分透過,故而有無機奈米螢光體粒子容易經時劣化之問題。因此,研究使用耐熱性或耐水性優異之玻璃作為無機奈米螢光體粒子之密封材料(例如參照專利文獻4)。 [先前技術文獻] [專利文獻] [專利文獻1]國際公開第2012/102107號公報 [專利文獻2]國際公開第2012/161065號公報 [專利文獻3]日本專利特表2013-525243號公報 [專利文獻4]日本專利特開2012-87162號公報
[發明所欲解決之問題] 於使用玻璃作為無機奈米螢光體粒子之密封材料之情形時,雖波長轉換構件本身之耐熱性及耐水性優異,但有無機奈米螢光體粒子本身與玻璃發生反應而劣化之問題。其結果為難以獲得具有所需之發光效率之波長轉換構件。 鑒於以上,本發明之目的在於提供一種於密封於玻璃中時可抑制無機奈米螢光體粒子之劣化之無機奈米螢光體粒子複合體;及使用其之波長轉換構件。 [解決問題之技術手段] 本發明之無機奈米螢光體粒子複合體之特徵在於:其係具備無機奈米螢光體粒子、及附著於無機奈米螢光體粒子之表面之無機微粒子而成。如此,於密封於玻璃中時,無機微粒子容易介於無機奈米螢光體粒子與玻璃之間。其結果為,可抑制無機奈米螢光體粒子與玻璃之接觸,抑制因與玻璃之反應所引起之無機奈米螢光體粒子之劣化,故而容易提昇波長轉換構件之發光效率。 本發明之無機奈米螢光體粒子複合體較佳為無機微粒子之平均粒徑大於無機奈米螢光體粒子。如此,可有效地抑制波長轉換構件中之無機奈米螢光體粒子與玻璃之接觸。 本發明之無機奈米螢光體粒子複合體較佳為無機微粒子之平均粒徑為1~1000 nm。 本發明之無機奈米螢光體粒子複合體較佳為無機微粒子包含氧化鋁、氧化矽、氧化鋯、氧化鋅、氧化鈦或氧化鈰。 本發明之無機奈米螢光體粒子複合體較佳為無機奈米螢光體粒子之平均粒徑為1~100 nm。 本發明之無機奈米螢光體粒子複合體較佳為無機奈米螢光體粒子為包含選自CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、InP、GaN、GaAs、GaP、AlN、AlP、AlSb、InN、InAs及InSb中之至少一種、或該等之兩種以上之複合體的量子點螢光體。 本發明之波長轉換構件之特徵在於:其包含上述無機奈米螢光體粒子複合體與玻璃粉末之燒結體。 本發明之波長轉換構件較佳為玻璃粉末包含Sn-P系玻璃或Sn-P-F系玻璃。 本發明之波長轉換構件較佳為玻璃粉末之平均粒徑為0.1~100 μm。 [發明之效果] 根據本發明,可提供一種於密封於玻璃中時可抑制無機奈米螢光體粒子之劣化之無機奈米螢光體粒子複合體;及使用其之波長轉換構件。
以下,對較佳之實施形態進行說明。但是,以下之實施形態僅為例示,本發明並不限定於以下之實施形態。又,於各圖式中,有實質上具有同一功能之構件以同一符號參照之情形。 圖1係本發明之一實施形態之無機奈米螢光體粒子複合體之模式性剖視圖。本實施形態之無機奈米螢光體粒子複合體1具備無機奈米螢光體粒子2、及附著於其表面之無機微粒子3。具體而言,無機奈米螢光體粒子複合體1係複數個無機微粒子3以包圍之方式附著於無機奈米螢光體粒子2之表面而成者。 圖2係本發明之一實施形態之波長轉換構件之模式性剖視圖。本實施形態之波長轉換構件4具有上述所說明之無機奈米螢光體粒子複合體1分散於玻璃基質5中而成之構造。 如圖1及2所示,由於無機奈米螢光體粒子複合體1具有無機微粒子3附著於無機奈米螢光體粒子2之表面之構造,故而於波長轉換構件4中無機奈米螢光體粒子2與玻璃基質5之接觸受到抑制。因此,可抑制因與玻璃基質5之反應所引起之無機奈米螢光體粒子2之劣化,故而容易提昇波長轉換構件4之發光效率。尤其於玻璃基質5包含玻璃粉末之燒結體之情形時,藉由使用本實施形態之無機奈米螢光體粒子複合體1,可有效地抑制無機奈米螢光體粒子2與玻璃基質5之接觸。可認為其原因在於:在複數個無機微粒子3包圍無機奈米螢光體粒子2之情形時,玻璃粉末不易進入至該複數個無機微粒子3之間隙。 作為無機奈米螢光體粒子2,可列舉CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、InP、GaN、GaAs、GaP、AlN、AlP、AlSb、InN、InAs及InSb等量子點螢光體。該等可單獨使用,或者混合兩種以上而使用。或者,亦可使用包含該等之兩種以上之複合體(例如,CdSe粒子表面經ZnS被覆之核殼構造體)。又,作為無機奈米螢光體粒子,除量子點螢光體以外,亦可使用包含氧化物、氮化物、氮氧化物、硫化物、氧硫化物、稀土類硫化物、鋁酸氯化物及鹵磷酸氯化物等無機粒子者。該等可單獨使用,或者混合兩種以上而使用。無機奈米螢光體粒子之平均粒徑並無特別限定,為1~100 nm、1~50 nm、1~30 nm、1~15 nm左右,進而為1.5~12 nm左右。再者,於本說明書中,平均粒徑係指依據JIS-R1629所測得之值(D50)。 波長轉換構件4之發光效率係根據分散於玻璃基質5中之無機奈米螢光體粒子2之種類或含量、及波長轉換構件4之厚度而發生變化。於欲提高發光效率之情形時,只要藉由使波長轉換構件4之厚度較薄而提高螢光或激發光之透過率,或者使無機奈米螢光體粒子2之含量較多而增大螢光量進行調整即可。但是,若無機奈米螢光體粒子2之含量變得過多,則產生於製造時難以燒結,氣孔率變大,激發光難以高效率地照射於無機奈米螢光體粒子2,或者波長轉換構件4之機械強度容易降低等問題。另一方面,若無機奈米螢光體粒子2之含量過少,則難以獲得充分之發光強度。因此,波長轉換構件4中之無機奈米螢光體粒子2之含量較佳為於0.01~30質量%、0.05~10質量%、尤其是0.08~5質量%之範圍內適當進行調整。 作為無機微粒子3,可列舉:氧化鋁、氧化矽、氧化鋯、氧化鋅、氧化鈦、氧化鈰等陶瓷粒子。該等可單獨使用或者混合2種以上而使用。再者,無機微粒子3可為包含複數個粒子之集合體(二次粒子)。無機微粒子3之平均粒徑較佳為1~1000 nm、5~500 nm、8~100 nm、尤其是10~20 nm。若無機微粒子3之平均粒徑過小或過大,則難以獲得抑制無機奈米螢光體粒子2與玻璃基質5之接觸之效果。再者,若無機微粒子3之平均粒徑大於無機奈米螢光體粒子2,則可有效地抑制無機奈米螢光體粒子2與玻璃基質5之接觸,故而較佳。 無機微粒子3之含量較佳為相對於1重量份之無機奈米螢光體粒子2為10~10000質量份、50~5000質量份、100~1000質量份、200~500質量份。若無機奈米螢光體粒子2之含量過少,則難以獲得抑制無機奈米螢光體粒子2與玻璃基質5之接觸之效果。另一方面,若無機奈米螢光體粒子2之含量過多,則有波長轉換構件4中之光散射之程度變大而發光效率降低之情形。 玻璃基質5之降伏點較佳為380℃以下、300℃以下、尤其是200℃以下。若玻璃基質5之降伏點過高,則相應地製造波長轉換構件4時之燒結溫度亦變高,故而無機奈米螢光體粒子2容易劣化。另一方面,玻璃基質5之降伏點之下限並無特別限定,現實上為100℃以上、尤其是120℃以上。此處,降伏點係指於藉由熱膨脹係數測定(TMA)裝置之測定中,試片表現出最大伸長率之點、即試片之伸長終止之值。 作為玻璃基質5,較佳為降伏點較低之Sn-P系玻璃、Sn-P-B系玻璃、Sn-P-F系玻璃等以Sn及P作為基底之玻璃。其中,較佳為使用容易使降伏點較低之Sn-P-F系玻璃。作為Sn-P-F系玻璃之具體之組成,可列舉以陽離子%計,含有10~90%之Sn2+
、10~70%之P5+
,以陰離子%計,含有30~99.9%之O2-
、0.1~70%之F-
者。以下,說明如此般限定各成分之含量之原因。再者,於未特別說明之情形時,於以下之與各成分之含量相關之說明中,「%」意指「陽離子%」或「陰離子%」。 Sn2+
係提昇化學耐久性或耐候性之成分。又,亦有降低降伏點之效果。Sn2+
之含量較佳為10~90%、20~85%、尤其是25~82.5%。若Sn2+
之含量過少,則難以獲得上述效果。另一方面,若Sn2+
之含量過多,則難以進行玻璃化,耐失透性容易降低。 P5+
係玻璃骨架之構成成分。又,具有提高透光率之效果。又,亦具有抑制失透,或者降低降伏點之效果。P5+
之含量較佳為10~70%、15~60%、尤其是20~50%。若P5+
之含量過少,則難以獲得上述效果。另一方面,若P5+
之含量過多,則Sn2+
之含量相對變少,耐候性容易降低。 再者,P5+
與Sn2+
之含量較佳為50%以上、70.5%以上、75%以上、80%以上、尤其是85%以上。若P5+
與Sn2+
之含量過少,則耐失透性或機械強度容易降低。P5+
與Sn2+
之含量之上限並無特別限定,可為100%,於含有其他成分之情形時,可設為99.9%以下、99%以下、95%以下,進而可設為90%以下。 作為陽離子成分,除上述成分以外,亦可含有以下之成分。 B3+
、Zn2+
、Si4+
及Al3+
係玻璃骨架之構成成分,尤其是提昇化學耐久性之效果較大。B3+
+Zn2+
+Si4+
+Al3+
之含量較佳為0~50%、0~30%、0.1~25%、0.5~20%、尤其是0.75~15%。若B3+
+Zn2+
+Si4+
+Al3+
之含量過多,則耐失透性容易降低。又,隨著熔融溫度之上升,Sn金屬等析出,透光率容易降低。又,降伏點容易上升。再者,就提昇耐候性之觀點而言,較佳為含有0.1%以上之B3+
+Zn2+
+Si4+
+Al3+
。再者,於本說明書中,「○+○+・・・」意指對應之各成分之合計量。 B3+
、Zn2+
、Si4+
及Al3+
之各成分之較佳之含量範圍如下所述。 B3+
係構成玻璃骨架之成分。又,有提昇耐候性之效果,尤其是抑制玻璃中之P5+
等成分選擇性地溶出至水中之效果較大。B3+
之含量較佳為0~50%、0.1~45%、尤其是0.5~40%。若B3+
之含量過多,則有耐失透性或透光率降低之傾向。 Zn2+
係作為助熔劑發揮作用之成分。又,有提昇耐候性,抑制玻璃成分溶出至研磨清洗水等各種清洗溶液中,或者抑制高溫多濕狀態下之玻璃表面之變質之效果。又,Zn2+
亦有使玻璃化穩定之效果。鑒於以上,Zn2+
之含量較佳為0~40%、0.1~30%、尤其是0.2~20%。若Zn2+
之含量過多,則有耐失透性或透光率降低之傾向。 Si4+
係構成玻璃骨架之成分。又,有提昇耐候性之效果,尤其是抑制玻璃中之P5+
等成分選擇性地溶出至水中之效果較大。Si4+
之含量較佳為0~20%、尤其是0.1~15%。若Si4+
之含量過多,則降伏點容易變高。又,因未溶解所引起之條紋或氣泡容易殘存於玻璃中。 Al3+
係可與Si4+
或B3+
一起構成玻璃骨架之成分。又,有提昇耐候性之效果,尤其是抑制玻璃中之P5+
等成分選擇性地溶出至水中之效果較大。Al3+
之含量較佳為0~20%、尤其是0.1~15%。若Al3+
之含量過多,則有耐失透性或透光率降低之傾向。進而,熔融溫度變高,因未溶解所引起之條紋或氣泡容易殘存於玻璃中。 Mg2+
、Ca2+
、Sr2+
及Ba2+
(鹼土金屬離子)係作為助熔劑發揮作用之成分。又,有提昇耐候性,抑制玻璃成分溶出至研磨清洗水等各種清洗溶液中,或者抑制高溫多濕狀態下之玻璃表面之變質之效果。又,為提高玻璃之硬度之成分。但是,若該等成分之含量過多,則耐失透性容易降低。因此,Mg2+
、Ca2+
、Sr2+
及Ba2+
之含量較佳為0~10%、0~7.5%、0.1~5%、尤其是0.2~1.5%。 Li+
係於鹼金屬氧化物中降低降伏點之效果最大之成分。又,但是,Li+
由於分相性較強,故而若其含量過多,則耐失透性容易降低。又,Li+
容易使化學耐久性降低,亦容易使透光率降低。因此,Li+
之含量較佳為0~10%、0~5%、0~1%、尤其是0~0.1%。 Na+
係與Li+
同樣地具有降低降伏點之效果。但是,若其含量過多,則容易生成條紋。又,耐失透性容易降低。又,Na+
容易使化學耐久性降低,亦容易使透光率降低。因此,Na+
之含量較佳為0~10%、0~5%、0~1%、尤其是0~0.1%。 K+
亦與Li+
同樣地具有降低降伏點之效果。但是,若其含量過多,則有耐候性降低之傾向。又,耐失透性容易降低。又,K+
容易使化學耐久性降低,亦容易使透光率降低。因此,K2
O之含量較佳為0~10%、0~5%、0~1%、尤其是0~0.1%。 再者,Li+
、Na+
及K+
之含量較佳為0~10%、0~5%、0~1%、尤其是0~0.1%。若Li+
、Na+
及K+
之含量過多,則有容易失透,化學耐久性亦降低之傾向。 除上述成分以外,亦可以合計量計含有至多10%之La3+
、Gd3+
、Ta5+
、W6+
、Nb5+
、Ti4+
、Y3+
、Yb3+
、Ge4+
、Te4+
、Bi3+
及Zr4+
等。 Ce4+
、Pr3+
、Nd3+
、Eu3+
、Tb3+
及Er3+
等稀土類成分、Fe3+
、Ni2+
、Co2+
係使透光率降低之成分。因此,該等成分之含量分別較佳為0.1%以下,更佳為不含有。 In3+
由於失透傾向較強,故而較佳為不含有。 再者,因環境上之原因,較佳為不含有Pb2+
及As3+
。 作為陰離子成分之F-
具有降低降伏點之作用、或提高透光率之效果。但是,若其含量過多,則熔融時之揮發性變高,容易產生條紋。又,耐失透性容易降低。F-
之含量較佳為0.1~70%、1~67.5%、5~65%、2~60%、尤其是10~60%。再者,作為用以導入F-
之原料,除SnF2
以外,亦可列舉:La、Gd、Ta、W、Nb、Y、Yb、Ge、Mg、Ca、Sr、Ba等之氟化物。 再者,作為F-
以外之陰離子成分,通常含有O2-
。即,O2-
之含量係根據F-
之含量決定。具體而言,O2-
之含量較佳為30~99.9%、32.5~99%、35~95%、40~98%、尤其是40~90%。 作為Sn-P系玻璃,可列舉以莫耳%計,含有50~80%之SnO、15~25%(但是,不包含25%)之P2
O5
、0~3%之ZrO2
、0~10%之Al2
O3
、0~10%之B2
O3
、0~10%之Li2
O、0~10%之Na2
O、0~10%之K2
O、0~10%之Li2
O+Na2
O+K2
O、0~10%之MgO、0~3%之CaO、0~2.5%之SrO、0~2%之BaO、0~11%之MgO+CaO+SrO+BaO及0~10%之ZrO2
+Al2
O3
+MgO,且SnO/P2
O5
為1.6~4.8者。 較佳為包含玻璃粉末作為玻璃基質5。具體而言,波長轉換構件4較佳為包含無機奈米螢光體粒子複合體1與玻璃粉末之燒結體。如此,可容易地製作將無機奈米螢光體粒子複合體1均質地分散於玻璃基質5中而成之波長轉換構件4。 玻璃粉末之平均粒徑較佳為0.1~100 μm、1~80 μm、5~60 μm、10~50 μm、尤其是15~40 μm。若玻璃粉末之平均粒徑過小,則容易與無機奈米螢光體粒子2接觸,無機奈米螢光體粒子2容易劣化。又,有於燒結時產生氣泡,波長轉換構件4之機械強度降低之虞。進而,有波長轉換構件4中之光散射之程度變大而發光效率降低之情形。另一方面,若玻璃粉末之平均粒徑過大,則有無機奈米螢光體粒子複合體1難以均質地分散於玻璃基質5中,其結果為,波長轉換構件4之發光效率降低之虞。 波長轉換構件4之形狀通常為矩形板狀或圓盤狀等板狀。於此情形時,波長轉換構件4之厚度較佳為0.03~1mm、0.05~0.5mm、尤其是0.1~0.3mm。若波長轉換構件4之厚度過小,則有機械強度較差之傾向。另一方面,若波長轉換構件4之厚度過大,則燒結時間變長,無機奈米螢光體粒子2容易劣化。或者,有燒結變得不充分之傾向。 波長轉換構件4可藉由與LED或LD等激發光源加以組合而用作發光裝置。 無機奈米螢光體粒子複合體1及波長轉換構件4例如可以如下之方式製作。 無機奈米螢光體粒子複合體1可藉由將無機奈米螢光體粒子2與無機微粒子3進行混合而製作。再者,於無機奈米螢光體粒子2為量子點之情形時,通常,於分散於有機分散介質等中之狀態下進行處理。因此,可於分散有無機奈米螢光體粒子2之有機分散介質中混合無機微粒子3後,使有機分散介質揮發,藉此獲得無機奈米螢光體粒子複合體1。 其次,可對無機奈米螢光體粒子複合體1混合成為玻璃基質5之玻璃粉末後,焙燒混合物,藉此獲得波長轉換構件4。焙燒溫度較佳為玻璃粉末之降伏點±50℃以內。具體而言,焙燒溫度較佳為380℃以下、300℃以下、200℃以下、尤其是180℃以下。若焙燒溫度過高,則無機奈米螢光體粒子2劣化,或者無機奈米螢光體粒子2與玻璃粉末發生反應而波長轉換構件4之發光效率容易降低。另一方面,若焙燒溫度過低,則有玻璃粉末之燒結變得不充分,波長轉換構件4之氣孔率變大之傾向。其結果為,波長轉換構件4中之光散射增強,螢光(或激發光)之提取效率容易降低。因此,焙燒溫度較佳為130℃以上。 再者,藉由對無機奈米螢光體粒子複合體1與玻璃粉末之混合物進行加熱壓製,可促進玻璃粉末之軟化流動,以極短時間進行燒結。因此,可大幅抑制焙燒時之施加於無機奈米螢光體粒子2之熱能,可明顯抑制無機奈米螢光體粒子2之熱劣化。又,可容易地製造薄型波長轉換構件4。 [實施例] 以下,基於具體之實施例,對本發明更詳細地進行說明,但本發明並不受以下之實施例任何限定,可於不變更其主旨之範圍內適當進行變更而實施。 (實施例) 對使無機奈米螢光體粒子(CdSe/ZnS,平均粒徑=3 nm)以1質量%之濃度分散於作為分散介質之己烷中而成之分散液100 μl,添加氧化鋁粒子(平均粒徑13 nm)0.19 g(相對於無機奈米螢光體粒子1質量份為288質量份)並加以混合,使分散介質揮發,藉此藉由氧化鋁粒子被覆無機奈米螢光體粒子表面,獲得無機奈米螢光體粒子複合體。 對無機奈米螢光體粒子複合體0.009 g混合Sn-P-F系玻璃粉末(平均粒徑=25 μm,降伏點=160℃)0.991 g,獲得混合物。將所獲得之混合物於氮氣環境中於180℃下進行加熱壓製。藉此,獲得板狀之波長轉換構件。 (比較例) 將無機奈米螢光體粒子不藉由氧化鋁粒子被覆而直接使用,除此以外,以與實施例相同之方式製作波長轉換構件。 (發光量子效率之測定) 對所獲得之波長轉換構件測定發光量子效率,進行相對比較。其結果為,比較例之波長轉換構件之發光量子效率為100 a.u.(arbitrary unit;任意單位),相對於此,實施例之波長轉換構件之發光量子效率為791 a.u.,表現出約7.9倍之發光量子效率。 再者,發光量子效率係指藉由下述式算出之值,使用絕對PL量子產率裝置(Hamamatsu Photonics公司製造)進行測定。 發光量子效率={(以發光之形式自樣本釋出之光子數)/(由樣本吸收之光子數)}×100(%)
1‧‧‧無機奈米螢光體粒子複合體2‧‧‧無機奈米螢光體粒子3‧‧‧無機微粒子4‧‧‧波長轉換構件5‧‧‧玻璃基質
圖1係本發明之一實施形態之無機奈米螢光體粒子複合體之模式性剖視圖。 圖2係本發明之一實施形態之波長轉換構件之模式性剖視圖。
Claims (10)
- 一種無機奈米螢光體粒子複合體,其特徵在於:其係具備無機奈米螢光體粒子、及附著於無機奈米螢光體粒子之表面之無機微粒子而成,且相對於1重量份之無機奈米螢光體粒子,無機微粒子之含量為10質量份以上。
- 如請求項1之無機奈米螢光體粒子複合體,其中無機微粒子之平均粒徑大於無機奈米螢光體粒子。
- 如請求項1或2之無機奈米螢光體粒子複合體,其中無機微粒子之平均粒徑為1~1000nm。
- 如請求項1或2之無機奈米螢光體粒子複合體,其中無機微粒子包含氧化鋁、氧化矽、氧化鋯、氧化鋅、氧化鈦或氧化鈰。
- 如請求項1或2之無機奈米螢光體粒子複合體,其中無機奈米螢光體粒子之平均粒徑為1~100nm。
- 如請求項1或2之無機奈米螢光體粒子複合體,其中無機奈米螢光體粒子係包含選自CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、InP、GaN、GaAs、GaP、AlN、AlP、AlSb、InN、InAs及InSb中之至少一種、或該 等之兩種以上之複合體的量子點螢光體。
- 一種波長轉換構件,其特徵在於:其係如請求項1至6中任一項之無機奈米螢光體粒子複合體分散於玻璃基質中而成。
- 如請求項7之波長轉換構件,其包含無機奈米螢光體粒子複合體與玻璃粉末之燒結體。
- 如請求項7或8之波長轉換構件,其中玻璃基質包含Sn-P系玻璃或Sn-P-F系玻璃。
- 如請求項8之波長轉換構件,其中玻璃粉末之平均粒徑為0.1~100μm。
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US10991856B2 (en) | 2017-12-21 | 2021-04-27 | Lumileds Llc | LED with structured layers and nanophosphors |
US10475968B1 (en) * | 2018-07-19 | 2019-11-12 | Osram Opto Semiconductors Gmbh | Optoelectronic component and a method for producing an optoelectronic component |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130257264A1 (en) * | 2012-03-28 | 2013-10-03 | Nichia Corporation | Wave-length conversion inorganic member, and method for manufacturing the same |
JP2015086284A (ja) * | 2013-10-30 | 2015-05-07 | シャープ株式会社 | 蛍光体、波長変換部材及び発光装置 |
JP2015089898A (ja) * | 2013-11-05 | 2015-05-11 | 信越化学工業株式会社 | 無機蛍光体粉末、無機蛍光体粉末を用いた硬化性樹脂組成物、波長変換部材および光半導体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0631906B2 (ja) * | 1986-01-30 | 1994-04-27 | コニカ株式会社 | 放射線画像変換パネル |
JPH10195429A (ja) * | 1997-01-16 | 1998-07-28 | Toshiba Corp | カラーテレビジョン用蛍光体 |
JP2002088358A (ja) * | 2000-09-14 | 2002-03-27 | Toshiba Corp | 陰極線管用蛍光体および陰極線管 |
WO2008116079A1 (en) * | 2007-03-20 | 2008-09-25 | Evident Technologies, Inc. | Powdered quantum dots |
JP2010083704A (ja) * | 2008-09-30 | 2010-04-15 | Toyoda Gosei Co Ltd | 蛍光体含有ガラス及びその製造方法 |
CN101723586B (zh) * | 2009-11-30 | 2011-08-24 | 浙江大学 | 一种应用于半导体照明的荧光粉/玻璃复合体及其制备方法 |
CN101717644B (zh) * | 2009-12-15 | 2012-10-24 | 中国科学院长春应用化学研究所 | 一种二氧化硅包覆量子点的制备方法 |
JP5749792B2 (ja) | 2010-04-22 | 2015-07-15 | オーシャンズ キング ライティング サイエンスアンドテクノロジー カンパニー リミテッド | 量子ドット・ガラス複合発光材料及びその製造方法 |
JP2012087162A (ja) * | 2010-10-15 | 2012-05-10 | Nippon Electric Glass Co Ltd | 波長変換部材およびそれを用いてなる光源 |
KR101529997B1 (ko) | 2011-01-28 | 2015-06-18 | 쇼와 덴코 가부시키가이샤 | 양자 도트 형광체를 포함하는 조성물, 양자 도트 형광체 분산 수지 성형체, 양자 도트 형광체를 포함하는 구조물, 발광 장치, 전자기기, 기계 장치, 및 양자 도트 형광체 분산 수지 성형체의 제조 방법 |
US20140003074A1 (en) * | 2011-03-16 | 2014-01-02 | Katsuhiko Kishimoto | Wavelength conversion member and method for manufacturing the same, and light-emitting device, illuminating device, and headlight |
JP5709188B2 (ja) | 2011-05-23 | 2015-04-30 | 独立行政法人産業技術総合研究所 | 薄膜シリカガラスコート量子ドットからなる蛍光性微粒子及びその製造方法 |
CN102863963B (zh) * | 2012-05-31 | 2014-04-16 | 浙江理工大学 | 一种SiO2-QDs的纳米复合材料的制备方法及应用 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130257264A1 (en) * | 2012-03-28 | 2013-10-03 | Nichia Corporation | Wave-length conversion inorganic member, and method for manufacturing the same |
JP2015086284A (ja) * | 2013-10-30 | 2015-05-07 | シャープ株式会社 | 蛍光体、波長変換部材及び発光装置 |
JP2015089898A (ja) * | 2013-11-05 | 2015-05-11 | 信越化学工業株式会社 | 無機蛍光体粉末、無機蛍光体粉末を用いた硬化性樹脂組成物、波長変換部材および光半導体装置 |
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