WO2017016007A1 - Tft基板结构及其制作方法 - Google Patents

Tft基板结构及其制作方法 Download PDF

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Publication number
WO2017016007A1
WO2017016007A1 PCT/CN2015/087726 CN2015087726W WO2017016007A1 WO 2017016007 A1 WO2017016007 A1 WO 2017016007A1 CN 2015087726 W CN2015087726 W CN 2015087726W WO 2017016007 A1 WO2017016007 A1 WO 2017016007A1
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layer
graphene
semiconductor layer
amorphous silicon
region
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PCT/CN2015/087726
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English (en)
French (fr)
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武岳
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深圳市华星光电技术有限公司
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Priority to US14/777,744 priority Critical patent/US9728647B2/en
Publication of WO2017016007A1 publication Critical patent/WO2017016007A1/zh

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    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Abstract

一种TFT基板结构及其制作方法，通过在半导体层（4）上方形成石墨烯层（5），在制作完第二金属层（6）之后，以第二金属层为掩模，对石墨烯层进行氟离子注入，在石墨烯层上对应半导体层的沟道区（41）上方形成改性区域，改性区域的石墨烯层具有绝缘特性以及隔绝水/氧的特性，可以对沟道区形成保护，源漏极（61,62）下方的石墨烯层未经离子掺杂，仍保持石墨烯优良的导电性，从而不需要对该石墨烯层设置过孔即可实现源、漏极与半导体层的电性连接，使制备的TFT器件具有良好的I-V(电流-电压)输出性能及稳定性，减少了一道光罩制程，缩短了生产周期并降低了生产成本。

Description

TFT基板结构及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种TFT基板结构及其制作方法。
背景技术
在有源矩阵显示技术中，每一个像素点都由集成在其后的薄膜晶体管(Thin Film Transistor，TFT)进行驱动，从而可以实现高速度、高亮度、高对比度的屏幕显示效果。常见的TFT通常由栅极/源极/漏极(Gate/Source/Drain)三电极、绝缘层以及半导体层构成。Gate电极控制着半导体层的工作区域(耗尽区或积累区)，从而控制着TFT的开关。所述半导体层上设有沟道，对于背沟道刻蚀(Back Channel Ethced，BCE)结构的TFT来说，所述沟道包括紧贴Gate电极的前导电沟道以及暴露于外界的背沟道，对于N型掺杂半导体层来说，当Gate电极加正偏压，紧贴Gate电极的前导电沟道(前导电沟道和栅电极被绝缘层隔开)产生电子的积累，TFT处于打开状态，当Source/Drain电极增加偏压时，TFT中有电流通过。
虽然从空间位置上来说，TFT背沟道离前导电沟道的距离比较远，但是TFT背沟道界面的性质对TFT输出电性曲线也有至关重要的影响。对于背沟道刻蚀(Back Channel Ethced，BCE)结构的TFT来说，在将沟道刻开的过程中会对背沟道造成损伤，并且，损伤的背沟道暴露于空气中，更容易引起由于水/氧的吸附而在背沟道中产生缺陷，造成TFT特性曲线在稳定性测试过程中的退化以及漏电的提升，器件稳定性降低。一种解决方法是采用具有蚀刻阻挡层(Etch Stop Layer，ESL)型结构的TFT，使用SiOx将背沟道保护起来，然而SiOx类物质对水的阻挡作用有限，另外，在此种结构中，金属电极与半导体层的接触一般通过过孔完成，则在实际生产中需增加一道光罩制程来形成过孔，延长了生产周期，提高生产成本。
石墨烯，作为目前已知世界上最薄，最坚硬的纳米材料，因其具有良好的导电调控性，机械特性，导热特性，从而成为当前研究热点之一。根据报道，使用卷对卷方式生产的石墨烯薄膜具有极低的方块电阻(<100Ω/□-1)，然而经过掺杂之后，又可以形成宽带系的二维绝缘材料。其次，单层石墨烯对水/氧具有良好的阻绝作用，可以有效防止金属的氧化。最后，目前也有很多成功的例子证明可以将单层/多层石墨烯薄膜从一种基底转移到另一种基底而对薄膜的性能不造成明显损害。
发明内容
本发明的目的在于提供一种TFT基板结构，通过在半导体层的沟道区上方设置有具有绝缘特性的改性石墨烯层，利用石墨烯隔绝水/氧的特性，对沟道区进行保护，使得TFT器件具有良好的I-V(电流-电压)输出性能及稳定性。
本发明的目的还在于提供一种TFT基板结构的制作方法，通过在半导体层上方形成石墨烯层，在制作完第二金属层之后，以第二金属层为掩模，对所述石墨烯层进行氟离子注入，在所述石墨烯层上对应半导体层的沟道区上方形成改性区域，所述改性区域的石墨烯层具有绝缘特性以及隔绝水/氧的特性，可以对沟道区形成保护，使制备的TFT器件具有良好的I-V(电流-电压)输出性能及稳定性。
为实现上述目的，本发明一种TFT基板结构，包括：基板、设于所述基板上的栅极、设于所述基板上覆盖栅极的栅极绝缘层、设于所述栅极绝缘层上的半导体层、设于所述半导体层上的石墨烯层、及设于所述石墨烯层上的源、漏极；
其中，所述半导体层包括沟道区、及分别设于所述沟道区两侧的源极接触区与漏极接触区；
所述石墨烯层包括对应于所述沟道区上方的第一改性区域、对应于所述源、漏极外侧的第二改性区域、及分别对应于所述源、漏极下方的第一、第二非改性区域，所述第一、第二改性区域的石墨烯层为掺杂了氟离子的石墨烯层，具有绝缘特性，所述第一、第二非改性区域的石墨烯层未进行任何掺杂，具有导电特性；
所述源、漏极分别经由所述第一、第二非改性区域的石墨烯层与所述半导体层的源极接触区、漏极接触区电性连接，所述第一改性区域的石墨烯层覆盖所述半导体层的沟道区，对其形成保护。
所述基板是玻璃基板或塑料基板；所述栅极的材料是钼、钛、铝、铜中的一种或多种的组合；所述栅极绝缘层的材料是氧化硅、氮化硅、或二者的组合。
所述半导体层为以下3种结构中的任意一种：
(Ⅰ)所述半导体层为一金属氧化物半导体层；
(Ⅱ)所述半导体层为一非晶硅层；
(Ⅲ)所述半导体层包括一非晶硅层、及位于所述非晶硅层上且分别位于其两侧的第一、第二N型重掺杂非晶硅层。
所述石墨烯保护层为单层石墨烯薄膜或多层石墨烯薄膜。
本发明还提供一种TFT基板结构的制作方法，包括以下步骤：
步骤1、提供一基板，在所述基板上沉积第一金属层，并对所述第一金属层进行图案化处理，得到栅极；
步骤2、在所述栅极及基板上沉积栅极绝缘层；
步骤3、在所述栅极绝缘层上沉积并图案化半导体层；
步骤4、在所述半导体层上形成石墨烯层；
步骤5、在所述石墨烯层上沉积第二金属层，并对所述第二金属层进行图案化处理，得到源、漏极；
步骤6、定义所述半导体层上对应所述源、漏极之间的区域为沟道区，位于所述沟道区两侧且分别对应于所述源、漏极下方的区域为源极接触区与漏极接触区；
以第二金属层作为掩模，采用SF6等离子体通过离子注入工艺将氟离子注入到所述石墨烯层中没有被所述第二金属层遮挡的区域，进行改性，在所述石墨烯层上形成对应于所述沟道区上方的第一改性区域、对应于所述源、漏极外侧的第二改性区域、及分别对应于所述源、漏极下方的第一、第二非改性区域，所述第一、第二改性区域的石墨烯层为掺杂了氟离子的石墨烯层，具有绝缘特性，所述第一、第二非改性区域的石墨烯层未进行任何掺杂，具有导电特性；
所述源、漏极分别经由所述第一、第二非改性区域的石墨烯层与所述半导体层的源极接触区、漏极接触区电性连接，所述第一改性区域的石墨烯层覆盖所述半导体层的沟道区，对其形成保护。
所述步骤3的具体操作过程为：采用物理气相沉积法在所述栅极绝缘层上沉积一金属氧化物半导体层，并采用光刻制程对其进行图案化处理，得到半导体层，从而制得的半导体层为一金属氧化物半导体层。
所述步骤3的具体操作过程为：采用化学气相沉积法在所述栅极绝缘层上沉积一非晶硅层，并采用光刻制程对其进行图案化处理，得到半导体层4，从而制得的半导体层为一非晶硅层。
所述步骤3的具体操作过程为：
步骤31、采用化学气相沉积法在所述栅极绝缘层上依次沉积非晶硅层、及N型重掺杂非晶硅层；
步骤32、采用光刻制程对所述非晶硅层、及N型重掺杂非晶硅层进行图案化处理，去除掉所述非晶硅层、及N型重掺杂非晶硅层位于TFT区域以外的部分，并在所述N型重掺杂非晶硅层上对应于所述栅极的中间位置 形成一条形通道，将所述N型重掺杂非晶硅层分割为位于所述条形通道两侧的第一、第二N型重掺杂非晶硅段，得到半导体层，从而制得的半导体层包括一非晶硅层、及位于所述非晶硅层上且分别位于其两侧的第一、第二N型重掺杂非晶硅层。
所述步骤4采用转移法来制备所述石墨烯层，具体包括以下步骤：
步骤41、提供一SiO2基底，在SiO2基底上通过化学气相沉积的方式沉积单层石墨烯薄膜；
步骤42、在所述SiO2基底及单层石墨烯薄膜上旋涂一层PMMA薄膜；
步骤43、使用1M NaOH碱性溶液对完成上述步骤42的SiO2基底进行湿蚀刻，使PMMA/单层石墨烯薄膜离开SiO2基底表面并浮于水面上；
步骤44、将所述PMMA/单层石墨烯薄膜转移到半导体层上，使用丙酮缓慢溶解去除PMMA，单层石墨烯薄膜完好的转移到半导体层上，从而制得的石墨烯层为单层石墨烯薄膜。
所述步骤4具体为：采用旋涂、喷涂、滚轴涂布或者狭缝涂布方法在所述半导体层上形成多层石墨烯薄膜，从而制得的石墨烯层为多层石墨烯薄膜。
本发明还提供一种TFT基板结构，包括：基板、设于所述基板上的栅极、设于所述基板上覆盖栅极的栅极绝缘层、设于所述栅极绝缘层上的半导体层、设于所述半导体层上的石墨烯层、及设于所述石墨烯层上的源、漏极；
其中，所述半导体层包括沟道区、及分别设于所述沟道区两侧的源极接触区与漏极接触区；
所述石墨烯层包括对应于所述沟道区上方的第一改性区域、对应于所述源、漏极外侧的第二改性区域、及分别对应于所述源、漏极下方的第一、第二非改性区域，所述第一、第二改性区域的石墨烯层为掺杂了氟离子的石墨烯层，具有绝缘特性，所述第一、第二非改性区域的石墨烯层未进行任何掺杂，具有导电特性；
所述源、漏极分别经由所述第一、第二非改性区域的石墨烯层与所述半导体层的源极接触区、漏极接触区电性连接，所述第一改性区域的石墨烯层覆盖所述半导体层的沟道区，对其形成保护；
其中，所述基板是玻璃基板或塑料基板；所述栅极的材料是钼、钛、铝、铜中的一种或多种的组合；所述栅极绝缘层的材料是氧化硅、氮化硅、或二者的组合；
其中，所述半导体层为以下3种结构中的任意一种：
(Ⅰ)所述半导体层为一金属氧化物半导体层；
(Ⅱ)所述半导体层为一非晶硅层；
(Ⅲ)所述半导体层包括一非晶硅层、及位于所述非晶硅层上且分别位于其两侧的第一、第二N型重掺杂非晶硅层；
其中，所述石墨烯保护层为单层石墨烯薄膜或多层石墨烯薄膜。
本发明的有益效果：本发明提供的一种TFT基板结构，通过在半导体层的沟道区上方设置有具有绝缘特性的改性石墨烯层，利用石墨烯隔绝水/氧的特性，对沟道区进行保护，并利用石墨烯优良的导电性及经离子掺杂后可变为绝缘体的特性，改变现有TFT保护层需要设置过孔以电性连接源、漏极与半导体层的结构，从而使得TFT器件具有良好的I-V(电流-电压)输出性能及稳定性。本发明提供的一种TFT基板结构的制作方法，通过在半导体层上方形成石墨烯层，在制作完第二金属层之后，以第二金属层为掩模，对所述石墨烯层进行氟离子注入，在所述石墨烯层上对应半导体层的沟道区上方形成改性区域，所述改性区域的石墨烯层具有绝缘特性以及隔绝水/氧的特性，可以对沟道区形成保护，源漏极下方的石墨烯层未经离子掺杂，仍保持石墨烯优良的导电性，从而不需要对该石墨烯层设置过孔即可实现源、漏极与半导体层的电性连接，使制备的TFT器件具有良好的I-V(电流-电压)输出性能及稳定性，减少了一道光罩制程，缩短了生产周期并降低了生产成本。本发明中所述石墨烯层的成膜方式多样，可采用溶液成膜方法，也可采用大面积单层膜转移法，为制程提供了较大空间。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明TFT基板结构的剖面示意图；
图2为本发明TFT基板结构的俯视图；
图3为本发明TFT基板的制作方法的流程示意图；
图4为本发明TFT基板的制作方法步骤1的示意图；
图5为本发明TFT基板的制作方法步骤2的示意图；
图6为本发明TFT基板的制作方法步骤3的示意图；
图7为本发明TFT基板的制作方法步骤4的示意图；
图8为本发明TFT基板的制作方法步骤5的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1-2，本发明首先提供一种TFT基板结构，该TFT基板结构包括：基板1、设于所述基板1上的栅极2、设于所述基板1上覆盖栅极2的栅极绝缘层3、设于所述栅极绝缘层3上的半导体层4、设于所述半导体层4上的石墨烯层5、及设于所述石墨烯层5上的源、漏极61、62。
其中，所述半导体层4包括沟道区41、及分别设于所述沟道区41两侧的源极接触区42与漏极接触区43；
所述石墨烯层5包括对应于所述沟道区41上方的第一改性区域51、对应于所述源、漏极61、62外侧的第二改性区域52、及分别对应于所述源、漏极61、62下方的第一、第二非改性区域53、54，所述第一、第二改性区域51、52的石墨烯层5为掺杂了氟离子的石墨烯层，具有绝缘特性，所述非改性区域53的石墨烯层5未进行任何掺杂，具有导电特性；
所述源、漏极61、62分别经由所述第一、第二非改性区域53、54的石墨烯层5与所述半导体层4的源极接触区42、漏极接触区43电性连接，所述第一改性区域51的石墨烯层5覆盖所述半导体层4的沟道区41，对其形成保护。；因此，无需在石墨烯层5上设置过孔即可实现源、漏极与半导体层的电性连接，从而使得TFT器件具有良好的I-V输出性能及稳定性。
具体的，所述基板1可以是玻璃基板或塑料基板。
所述栅极2的材料可以是钼(Mo)、钛(Ti)、铝(Al)、铜(Cu)中的一种或多种的组合。
所述栅极绝缘层3的材料可以是氧化硅、氮化硅、或二者的组合。
具体的，所述半导体层4可以为以下3种结构中的任意一种：
(Ⅰ)所述半导体层4为一金属氧化物半导体层，所述金属氧化物半导体层的材料可以为铟镓锌氧化物(IGZO)等；
(Ⅱ)所述半导体层4为一非晶硅(a-Si)层；
(Ⅲ)所述半导体层4包括一非晶硅层、及位于所述非晶硅层上且分别位于其两侧的第一、第二N型重掺杂非晶硅层。所述第一、第二N型重掺杂非晶硅层的引入可以使半导体4与源、漏极61、62之间的接触电阻进 一步降低，从而提升电流效率。
具体的，所述石墨烯层5可以为单层石墨烯薄膜或者多层石墨烯薄膜。
所述源、漏极61、62的材料可以是钼(Mo)、钛(Ti)、铝(Al)、铜(Cu)中的一种或多种的组合。
上述TFT基板结构，通过在半导体层的沟道区上方设置有具有绝缘特性的改性石墨烯层，利用石墨烯隔绝水/氧的特性，对沟道区进行保护，并利用石墨烯优良的导电性及经离子掺杂后可变为绝缘体的特性，改变现有TFT保护层需要设置过孔以电性连接源、漏极与半导体层的结构，从而提供了TFT器件的I-V(电流-电压)输出性能及稳定性。
请参阅图3，本发明还提供一种TFT基板结构的制作方法，其特征在于，包括以下步骤：
步骤1、如图4所示，提供一基板1，在所述基板1上沉积第一金属层，并对所述第一金属层进行图案化处理，得到栅极2。
具体的，所述基板1可以是玻璃基板或塑料基板。
具体的，采用物理气相沉积(PVD)法沉积所述第一金属层并采用光刻制程图案化所述第一金属层，所述第一金属层的材料可以是钼(Mo)、钛(Ti)、铝(Al)、铜(Cu)中的一种或多种的组合。
步骤2、如图5所示，在所述栅极2及基板1上沉积栅极绝缘层3。
具体的，采用化学气相沉积(CVD)法沉积所述栅极绝缘层3，所述栅极绝缘层3的材料可以是氧化硅、氮化硅、或二者的组合。
步骤3、如图6所示，在所述栅极绝缘层3上沉积并图案化半导体层4。
具体的，所述步骤3可以通过以下3种方法中的任意一种来实现：
(Ⅰ)、所述步骤3的具体操作过程为：采用物理气相沉积法在所述栅极绝缘层3上沉积一金属氧化物半导体层，并采用光刻制程对其进行图案化处理，得到半导体层4，从而制得的半导体层4为一金属氧化物半导体层。
具体的，所述金属氧化物半导体层的材料可以为铟镓锌氧化物(IGZO)等。
(Ⅱ)、所述步骤3的具体操作过程为：采用化学气相沉积法在所述栅极绝缘层3上沉积一非晶硅层，并采用光刻制程对其进行图案化处理，得到半导体层4，从而制得的半导体层4为一非晶硅层。
(Ⅲ)、所述步骤3的具体操作过程为：
步骤31、采用化学气相沉积法在所述栅极绝缘层(3)上依次沉积非晶硅层、及N型重掺杂非晶硅层；
步骤32、采用光刻制程对所述非晶硅层、及N型重掺杂非晶硅层进行 图案化处理，去除掉所述非晶硅层、及N型重掺杂非晶硅层位于TFT区域以外的部分，并在所述N型重掺杂非晶硅层上对应于所述栅极2的中间位置形成一条形通道，将所述N型重掺杂非晶硅层分割为位于所述条形通道两侧的第一、第二N型重掺杂非晶硅段，得到半导体层4，从而制得的半导体层4包括一非晶硅层、及位于所述非晶硅层上且分别位于其两侧的第一、第二N型重掺杂非晶硅层。步骤4、如图7所示，在所述半导体层4上形成石墨烯层5。
具体的，所述步骤4可以采用转移法来制备所述石墨烯层5，具体包括以下步骤：
步骤41、提供一SiO2基底，在SiO2基底上通过化学气相沉积的方式沉积单层石墨烯薄膜；
步骤42、在所述SiO2基底及单层石墨烯薄膜上旋涂一层PMMA薄膜；
步骤43、使用1M NaOH碱性溶液对完成上述步骤42的SiO2基底进行湿蚀刻，至所述SiO2基底表面软化即可，使PMMA/单层石墨烯薄膜离开所述SiO2基底表面并浮于水面上；
步骤44、将所述PMMA/单层石墨烯薄膜转移到半导体层4上，使用丙酮缓慢溶解去除PMMA，单层石墨烯薄膜完好的转移到半导体层4上，从而制得的石墨烯层5为单层石墨烯薄膜。
具体的，所述步骤4还可以为：采用旋涂、喷涂、滚轴涂布或者狭缝涂布方法在所述半导体层4上形成多层石墨烯薄膜，从而制得的石墨烯层5为多层石墨烯薄膜。
步骤5、如图8所示，在所述石墨烯层5上沉积第二金属层6，并对所述第二金属层6进行图案化处理，得到源、漏极61、62。
具体的，采用物理气相沉积(PVD)法沉积所述第二金属层并采用光刻制程图案化所述第二金属层，所述第二金属层的材料可以是钼(Mo)、钛(Ti)、铝(Al)、铜(Cu)中的一种或多种的组合。
步骤6、请参阅图1，定义所述半导体层4上对应所述源、漏极61、62之间的区域为沟道区41，位于所述沟道区41两侧且分别对应于所述源、漏极61、62下方的区域为源极接触区42与漏极接触区43；
以第二金属层6作为掩模，采用SF6等离子体通过离子注入工艺将氟离子注入到所述石墨烯层5中没有被所述第二金属层6遮挡的区域，进行改性，在所述石墨烯层5上形成对应于所述沟道区41上方的第一改性区域51、对应于所述源、漏极61、62外侧的第二改性区域52、及分别对应于所述源、漏极61、62下方的第一、第二非改性区域53、54，所述第一、第二 改性区域51、52的石墨烯层5为掺杂了氟离子的石墨烯层，具有绝缘特性，所述第一、第二非改性区域53、54的石墨烯层5未进行任何掺杂，具有导电特性；
所述源、漏极61、62分别经由所述第一、第二非改性区域53、54的石墨烯层5与所述半导体层4的源极接触区42、漏极接触区43电性连接，所述第一改性区域51的石墨烯层5覆盖所述半导体层4的沟道区41，对其形成保护，从而得到如图1-2所示的TFT基板结构。
上述TFT基板结构的制作方法，通过在半导体层上方形成石墨烯层，在制作完第二金属层之后，以第二金属层为掩模，对所述石墨烯层进行氟离子注入，在所述石墨烯层上对应半导体层的沟道区上方形成改性区域，所述改性区域的石墨烯层具有绝缘特性以及隔绝水/氧的特性，可以对沟道区形成保护，源漏极下方的石墨烯层未经离子掺杂，仍保持石墨烯优良的导电性，从而不需要对该石墨烯层设置过孔即可实现源、漏极与半导体层的电性连接，使制备的TFT器件具有良好的I-V(电流-电压)输出性能及稳定性，其中所述石墨烯层的成膜方式多样，可采用溶液成膜方法，也可采用大面积单层膜转移法，为制程提供了较大空间；同时该制作方法利用源漏极为掩模，使沟道区上方的石墨烯层变成良好的绝缘体，减少了一道光罩制程，从而降低生产成本。
综上所述，本发明提供的一种TFT基板结构，通过在半导体层的沟道区上方设置有具有绝缘特性的改性石墨烯层，利用石墨烯隔绝水/氧的特性，对沟道区进行保护，并利用石墨烯优良的导电性及经离子掺杂后可变为绝缘体的特性，改变现有TFT保护层需要设置过孔以电性连接源、漏极与半导体层的结构，从而使得TFT器件具有良好的I-V(电流-电压)输出性能及稳定性。本发明提供的一种TFT基板结构的制作方法，通过在半导体层上方形成石墨烯层，在制作完第二金属层之后，以第二金属层为掩模，对所述石墨烯层进行氟离子注入，在所述石墨烯层上对应半导体层的沟道区上方形成改性区域，所述改性区域的石墨烯层具有绝缘特性以及隔绝水/氧的特性，可以对沟道区形成保护，源漏极下方的石墨烯层未经离子掺杂，仍保持石墨烯优良的导电性，从而不需要对该石墨烯层设置过孔即可实现源、漏极与半导体层的电性连接，使制备的TFT器件具有良好的I-V(电流-电压)输出性能及稳定性，减少了一道光罩制程，缩短了生产周期并降低了生产成本。本发明中所述石墨烯层的成膜方式多样，可采用溶液成膜方法，也可采用大面积单层膜转移法，为制程提供了较大空间。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种TFT基板结构，包括：基板、设于所述基板上的栅极、设于所述基板上覆盖栅极的栅极绝缘层、设于所述栅极绝缘层上的半导体层、设于所述半导体层上的石墨烯层、及设于所述石墨烯层上的源、漏极；
    其中，所述半导体层包括沟道区、及分别设于所述沟道区两侧的源极接触区与漏极接触区；
    所述石墨烯层包括对应于所述沟道区上方的第一改性区域、对应于所述源、漏极外侧的第二改性区域、及分别对应于所述源、漏极下方的第一、第二非改性区域，所述第一、第二改性区域的石墨烯层为掺杂了氟离子的石墨烯层，具有绝缘特性，所述第一、第二非改性区域的石墨烯层未进行任何掺杂，具有导电特性；
    所述源、漏极分别经由所述第一、第二非改性区域的石墨烯层与所述半导体层的源极接触区、漏极接触区电性连接，所述第一改性区域的石墨烯层覆盖所述半导体层的沟道区，对其形成保护。
  2. 如权利要求1所述的TFT基板结构，其中，所述基板是玻璃基板或塑料基板；所述栅极的材料是钼、钛、铝、铜中的一种或多种的组合；所述栅极绝缘层的材料是氧化硅、氮化硅、或二者的组合。
  3. 如权利要求1所述的TFT基板结构，其中，所述半导体层为以下3种结构中的任意一种：
    (Ⅰ)所述半导体层为一金属氧化物半导体层；
    (Ⅱ)所述半导体层为一非晶硅层；
    (Ⅲ)所述半导体层包括一非晶硅层、及位于所述非晶硅层上且分别位于其两侧的第一、第二N型重掺杂非晶硅层。
  4. 如权利要求1所述的TFT基板结构，其中，所述石墨烯保护层为单层石墨烯薄膜或多层石墨烯薄膜。
  5. 一种TFT基板结构的制作方法，包括以下步骤：
    步骤1、提供一基板，在所述基板上沉积第一金属层，并对所述第一金属层进行图案化处理，得到栅极；
    步骤2、在所述栅极及基板上沉积栅极绝缘层；
    步骤3、在所述栅极绝缘层上沉积并图案化半导体层；
    步骤4、在所述半导体层上形成石墨烯层；
    步骤5、在所述石墨烯层上沉积第二金属层，并对所述第二金属层进行 图案化处理，得到源、漏极；
    步骤6、定义所述半导体层上对应所述源、漏极之间的区域为沟道区，位于所述沟道区两侧且分别对应于所述源、漏极下方的区域为源极接触区与漏极接触区；
    以第二金属层作为掩模，采用SF6等离子体通过离子注入工艺将氟离子注入到所述石墨烯层中没有被所述第二金属层遮挡的区域，进行改性，在所述石墨烯层上形成对应于所述沟道区上方的第一改性区域、对应于所述源、漏极外侧的第二改性区域、及分别对应于所述源、漏极下方的第一、第二非改性区域，所述第一、第二改性区域的石墨烯层为掺杂了氟离子的石墨烯层，具有绝缘特性，所述第一、第二非改性区域的石墨烯层未进行任何掺杂，具有导电特性；
    所述源、漏极分别经由所述第一、第二非改性区域的石墨烯层与所述半导体层的源极接触区、漏极接触区电性连接，所述第一改性区域的石墨烯层覆盖所述半导体层的沟道区，对其形成保护。
  6. 如权利要求5所述的TFT基板结构的制作方法，其中，所述步骤3的具体操作过程为：采用物理气相沉积法在所述栅极绝缘层上沉积一金属氧化物半导体层，并采用光刻制程对其进行图案化处理，得到半导体层，从而制得的半导体层为一金属氧化物半导体层。
  7. 如权利要求5所述的TFT基板结构的制作方法，其中，所述步骤3的具体操作过程为：采用化学气相沉积法在所述栅极绝缘层上沉积一非晶硅层，并采用光刻制程对其进行图案化处理，得到半导体层，从而制得的半导体层为一非晶硅层。
  8. 如权利要求5所述的TFT基板结构的制作方法，其中，所述步骤3的具体操作过程为：
    步骤31、采用化学气相沉积法在所述栅极绝缘层上依次沉积非晶硅层、及N型重掺杂非晶硅层；
    步骤32、采用光刻制程对所述非晶硅层、及N型重掺杂非晶硅层进行图案化处理，去除掉所述非晶硅层、及N型重掺杂非晶硅层位于TFT区域以外的部分，并在所述N型重掺杂非晶硅层上对应于所述栅极的中间位置形成一条形通道，将所述N型重掺杂非晶硅层分割为位于所述条形通道两侧的第一、第二N型重掺杂非晶硅段，得到半导体层，从而制得的半导体层包括一非晶硅层、及位于所述非晶硅层上且分别位于其两侧的第一、第二N型重掺杂非晶硅层。
  9. 如权利要求5所述的TFT基板结构的制作方法，其中，所述步骤4 采用转移法来制备所述石墨烯层，具体包括以下步骤：
    步骤41、提供一SiO2基底，在SiO2基底上通过化学气相沉积的方式沉积单层石墨烯薄膜；
    步骤42、在所述SiO2基底及单层石墨烯薄膜上旋涂一层PMMA薄膜；
    步骤43、使用1M NaOH碱性溶液对完成上述步骤42的SiO2基底进行湿蚀刻，使PMMA/单层石墨烯薄膜离开SiO2基底表面并浮于水面上；
    步骤44、将所述PMMA/单层石墨烯薄膜转移到半导体层上，使用丙酮缓慢溶解去除PMMA，单层石墨烯薄膜完好的转移到半导体层上，从而制得的石墨烯层为单层石墨烯薄膜。
  10. 如权利要求5所述的TFT基板结构的制作方法，其中，所述步骤4具体为：采用旋涂、喷涂、滚轴涂布或者狭缝涂布方法在所述半导体层上形成多层石墨烯薄膜，从而制得的石墨烯层为多层石墨烯薄膜。
  11. 一种TFT基板结构，包括：基板、设于所述基板上的栅极、设于所述基板上覆盖栅极的栅极绝缘层、设于所述栅极绝缘层上的半导体层、设于所述半导体层上的石墨烯层、及设于所述石墨烯层上的源、漏极；
    其中，所述半导体层包括沟道区、及分别设于所述沟道区两侧的源极接触区与漏极接触区；
    所述石墨烯层包括对应于所述沟道区上方的第一改性区域、对应于所述源、漏极外侧的第二改性区域、及分别对应于所述源、漏极下方的第一、第二非改性区域，所述第一、第二改性区域的石墨烯层为掺杂了氟离子的石墨烯层，具有绝缘特性，所述第一、第二非改性区域的石墨烯层未进行任何掺杂，具有导电特性；
    所述源、漏极分别经由所述第一、第二非改性区域的石墨烯层与所述半导体层的源极接触区、漏极接触区电性连接，所述第一改性区域的石墨烯层覆盖所述半导体层的沟道区，对其形成保护；
    其中，所述基板是玻璃基板或塑料基板；所述栅极的材料是钼、钛、铝、铜中的一种或多种的组合；所述栅极绝缘层的材料是氧化硅、氮化硅、或二者的组合；
    其中，所述半导体层为以下3种结构中的任意一种：
    (Ⅰ)所述半导体层为一金属氧化物半导体层；
    (Ⅱ)所述半导体层为一非晶硅层；
    (Ⅲ)所述半导体层包括一非晶硅层、及位于所述非晶硅层上且分别位于其两侧的第一、第二N型重掺杂非晶硅层；
    其中，所述石墨烯保护层为单层石墨烯薄膜或多层石墨烯薄膜。
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