WO2016103547A1 - 発光装置及びその製造方法 - Google Patents
発光装置及びその製造方法 Download PDFInfo
- Publication number
- WO2016103547A1 WO2016103547A1 PCT/JP2015/005377 JP2015005377W WO2016103547A1 WO 2016103547 A1 WO2016103547 A1 WO 2016103547A1 JP 2015005377 W JP2015005377 W JP 2015005377W WO 2016103547 A1 WO2016103547 A1 WO 2016103547A1
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- Prior art keywords
- light emitting
- layer
- emitting device
- electrode
- mounting substrate
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 147
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 112
- 239000000758 substrate Substances 0.000 claims abstract description 289
- 239000004020 conductor Substances 0.000 claims abstract description 215
- 229910052751 metal Inorganic materials 0.000 claims abstract description 163
- 239000002184 metal Substances 0.000 claims abstract description 163
- 239000011521 glass Substances 0.000 claims abstract description 49
- 125000006850 spacer group Chemical group 0.000 claims description 196
- 230000004888 barrier function Effects 0.000 claims description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 48
- 230000008569 process Effects 0.000 claims description 48
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 47
- 238000005304 joining Methods 0.000 claims description 32
- 230000002093 peripheral effect Effects 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 23
- 239000002585 base Substances 0.000 claims description 22
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 16
- 230000008018 melting Effects 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 11
- 238000007496 glass forming Methods 0.000 claims description 9
- 239000003513 alkali Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 594
- 239000010408 film Substances 0.000 description 262
- 239000004065 semiconductor Substances 0.000 description 82
- 235000012431 wafers Nutrition 0.000 description 74
- 238000010586 diagram Methods 0.000 description 16
- 238000010292 electrical insulation Methods 0.000 description 16
- 230000004048 modification Effects 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- 229920005989 resin Polymers 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 238000011156 evaluation Methods 0.000 description 13
- 238000007789 sealing Methods 0.000 description 13
- 239000005388 borosilicate glass Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 230000017525 heat dissipation Effects 0.000 description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 10
- 239000002356 single layer Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- 230000001954 sterilising effect Effects 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000000844 anti-bacterial effect Effects 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000005693 optoelectronics Effects 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000004659 sterilization and disinfection Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 3
- 238000005422 blasting Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 239000012463 white pigment Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- -1 Ta 2 O 5 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 1
- ONRPGGOGHKMHDT-UHFFFAOYSA-N benzene-1,2-diol;ethane-1,2-diamine Chemical compound NCCN.OC1=CC=CC=C1O ONRPGGOGHKMHDT-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000002070 germicidal effect Effects 0.000 description 1
- 239000005337 ground glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Definitions
- the present invention relates to a light emitting device and a manufacturing method thereof.
- the optical element is made of, for example, a glass plate.
- the LED element is flip-chip bonded to the electrode pattern through solder bumps formed on each electrode of the LED element.
- the spacer is made of, for example, a silicon substrate, and is bonded to the submount substrate by an adhesive sheet.
- the optical element is made of, for example, a glass plate, and is bonded to the upper surface of the spacer by an adhesive sheet.
- a light emitting device in which an LED element is flip-chip mounted on an inorganic material substrate, followed by a wavelength conversion layer coating step, and then a step of bonding the inorganic material substrate and the glass lid is performed.
- a production method is known (Document 2 [Japanese Patent Application Publication No. 2011-40577]).
- an AuSn electrode for flip-chip mounting the LED element, and an Au layer as a welding base layer for bonding a glass lid are formed.
- An object of the present invention is to provide a light-emitting device capable of improving reliability and reducing costs and a method for manufacturing the same.
- a light-emitting device includes a mounting substrate, an ultraviolet light-emitting element mounted on the mounting substrate, and a cap that is disposed on the mounting substrate and has a recess that houses the ultraviolet light-emitting element.
- the mounting substrate includes a support, and a first conductor portion, a second conductor portion, and a first bonding metal layer supported by the support. The first conductor portion and the second conductor portion are arranged so as to face the inner bottom surface of the concave portion of the cap on the surface side of the support.
- the cap includes a cap body having a front surface and a back surface, the recess being formed on the back surface, and a peripheral portion of the recess on the back surface of the cap body, facing the first bonding metal layer.
- the part between the said surface of the said cap main body and the inner bottom face of the said recessed part is formed with the glass which permeate
- the ultraviolet light emitting element includes a first electrode and a second electrode, and the first electrode and the second electrode are disposed on one surface side in the thickness direction of the ultraviolet light emitting element.
- the first conductor portion, the second conductor portion, and the first bonding metal layer are formed of the same laminated film on the surface side of the support.
- the uppermost layer farthest from the support in each of the first conductor portion, the second conductor portion, and the first metal layer for bonding is formed of Au.
- the first electrode and the first conductor portion are joined by a first joint portion made of AuSn, and the second electrode and the second conductor portion are made of AuSn. It is joined by the joint.
- the first bonding metal layer and the second bonding metal layer are bonded by a third bonding portion formed of AuSn.
- a method for manufacturing a light emitting device is a method for manufacturing a light emitting device having the following configuration.
- the light emitting device includes a mounting substrate, an ultraviolet light emitting element mounted on the mounting substrate, and a cap that is disposed on the mounting substrate and has a recess that accommodates the ultraviolet light emitting element.
- the mounting substrate includes a support, and a first conductor portion, a second conductor portion, and a first bonding metal layer supported by the support. The first conductor portion and the second conductor portion are arranged so as to face the inner bottom surface of the concave portion of the cap on the surface side of the support.
- the cap includes a cap body having a front surface and a back surface, the recess being formed on the back surface, and a peripheral portion of the recess on the back surface of the cap body, facing the first bonding metal layer. A second bonding metal layer.
- At least an ultraviolet light transmitting portion between the surface of the cap body and the inner bottom surface of the concave portion is formed of glass that transmits ultraviolet light emitted from the ultraviolet light emitting element.
- the ultraviolet light emitting element includes a first electrode and a second electrode, and the first electrode and the second electrode are disposed on one surface side in the thickness direction of the ultraviolet light emitting element.
- the cap is formed.
- the second bonding metal layer in the first electrode, the second electrode, and the cap of the ultraviolet light emitting element, and the first conductor portion and the second conductor portion of the mounting substrate are then used.
- the first bonding metal layer are bonded by a first AuSn layer, a second AuSn layer, and a third AuSn layer, respectively.
- the first AuSn layer, the second AuSn layer, and the third AuSn layer are collectively formed in the same process on the mounting substrate.
- FIG. 1 is a schematic cross-sectional view showing the light emitting device of the first embodiment.
- FIG. 2 is a schematic plan view showing the light emitting device of the first embodiment.
- FIG. 3 is a schematic side view showing the light emitting device of the first embodiment.
- FIG. 4 is a schematic bottom view showing the light emitting device of the first embodiment.
- FIG. 5 is a schematic side view of the light emitting device of Embodiment 1 mounted on a wiring board.
- 6 is a schematic cross-sectional view of an ultraviolet light-emitting element in the light-emitting device of Embodiment 1.
- FIG. FIG. 7A is a main process plan view for describing the method for manufacturing the light-emitting device of Embodiment 1.
- FIG. 7B is a main process plan view for describing the method for manufacturing the light-emitting device of Embodiment 1.
- FIG. 7C is a main process plan view for describing the method for manufacturing the light-emitting device of Embodiment 1.
- FIG. 7D is a main process plan view for describing the method for manufacturing the light-emitting device of Embodiment 1.
- FIG. 7E is a main process plan view for describing the method for manufacturing the light-emitting device of Embodiment 1.
- FIG. 8 is a main process cross-sectional view for explaining the method for manufacturing the light emitting device of the first embodiment.
- FIG. 9 is a bactericidal effect curve.
- FIG. 10 is a schematic plan view showing a modification of the light emitting device of the first embodiment.
- FIG. 10 is a schematic plan view showing a modification of the light emitting device of the first embodiment.
- FIG. 11A is an explanatory diagram of the relationship between the wavelength of light incident on an evaluation sample using a Si substrate at an incident angle of 5 ° and the reflectance.
- FIG. 11B is an explanatory diagram of the relationship between the wavelength of light incident on the evaluation sample using the Si substrate at an incident angle of 15 ° and the reflectance.
- FIG. 11C is an explanatory diagram of the relationship between the wavelength and the reflectance of light incident on the evaluation sample using the Si substrate at an incident angle of 25 °.
- FIG. 11D is an explanatory diagram of the relationship between the wavelength of light incident on an evaluation sample using a Si substrate at an incident angle of 35 ° and the reflectance.
- FIG. 11E is an explanatory diagram of the relationship between the reflectance and the wavelength of light incident on the evaluation sample using the Si substrate at an incident angle of 45 °.
- FIG. 11F is a diagram illustrating the relationship between the reflectance and the wavelength of light incident on the evaluation sample using the Si substrate at an incident angle of 55 °.
- FIG. 12A is an explanatory diagram of the relationship between the reflectance and the wavelength of light incident on the Al substrate at an incident angle of 15 °.
- FIG. 12B is an explanatory diagram of the relationship between the reflectance and the wavelength of light incident on the Al substrate at an incident angle of 25 °.
- FIG. 12C is an explanatory diagram of the relationship between the reflectance and the wavelength of light incident on the Al substrate at an incident angle of 35 °.
- FIG. 12A is an explanatory diagram of the relationship between the reflectance and the wavelength of light incident on the Al substrate at an incident angle of 15 °.
- FIG. 12B is an explanatory diagram of the relationship between the reflectance and the
- FIG. 12D is a diagram illustrating the relationship between the reflectance and the wavelength of light incident on the Al substrate at an incident angle of 45 °.
- FIG. 12E is an explanatory diagram of the relationship between the reflectance and the wavelength of light incident on the Al substrate at an incident angle of 55 °.
- FIG. 13 is a schematic cross-sectional view showing the light emitting device of the second embodiment.
- FIG. 14 is a main process cross-sectional view illustrating the method for manufacturing the light emitting device of the second embodiment.
- FIG. 15 is a schematic cross-sectional view showing the light emitting device of the third embodiment.
- FIG. 16 is a schematic plan view showing the light emitting device of the third embodiment.
- FIG. 17 is a cross-sectional view of main processes for explaining the method for manufacturing the light emitting device of the third embodiment.
- FIG. 18 is a schematic side view of the light emitting device of Embodiment 3 mounted on a wiring board.
- FIG. 19 is a schematic cross-sectional view showing the light emitting device of the fourth embodiment.
- FIG. 20 is a cross-sectional view of main processes for explaining the method for manufacturing the light-emitting device of Embodiment 4.
- FIG. 21 is a schematic cross-sectional view showing a first modification of the cap in the fourth embodiment.
- FIG. 22 is a schematic cross-sectional view showing a second modification of the cap in the fourth embodiment.
- FIG. 23 is a schematic cross-sectional view showing a third modification of the cap in the fourth embodiment.
- FIG. 24 is a schematic cross-sectional view showing a fourth modification of the cap in the fourth embodiment.
- FIG. 25 is a schematic cross-sectional view showing the light emitting device of the fifth embodiment.
- FIG. 26 is a main process cross-sectional view for explaining the method for manufacturing the light-emitting device of Embodiment 5.
- FIG. 27 is a schematic cross-sectional view illustrating the light emitting device of the sixth embodiment.
- FIG. 28 is a main process cross-sectional view for describing the method for manufacturing the light-emitting device of Embodiment 6.
- FIG. 29 is an explanatory diagram of the result of cross-sectional observation of a cap using a scanning electron microscope (SEM) and the result of a composition analysis using EDX (energy dispersive x-ray spectroscopic).
- FIG. 30 is a schematic cross-sectional view showing the light emitting device of the first example.
- FIG. 31 is a main process sectional view for explaining the method for manufacturing the light emitting device of the first example.
- FIG. 32 is a schematic cross-sectional view showing a light emitting device of a second example.
- FIG. 33 is a main process sectional view for explaining the method for manufacturing the light emitting device of the second example.
- FIG. 34 is a schematic cross-sectional view showing the light emitting device of the seventh embodiment.
- FIG. 35A is a main process sectional view for describing the method for manufacturing the light-emitting device of Embodiment 7.
- FIG. 35B is a main process sectional view for describing the method for manufacturing the light-emitting
- FIGS. 1 is a schematic schematic cross-sectional view corresponding to the XX cross section of FIG.
- the light emitting device 1a includes a mounting substrate 2a, an ultraviolet light emitting element 3 mounted on the mounting substrate 2a, a spacer 4 formed on the mounting substrate 2a and having a through hole 41 that exposes the ultraviolet light emitting element 3, and a spacer 4 And a cover 5 disposed on the spacer 4 so as to close the through-hole 41.
- the mounting substrate 2a includes a support body 20a, and a first conductor portion 21, a second conductor portion 22, and a first bonding metal layer 23 supported by the support body 20a.
- the 1st conductor part 21 and the 2nd conductor part 22 are arrange
- the spacer 4 includes a spacer main body 40 formed of Si, and a second bonding metal layer 43 disposed opposite to the first bonding metal layer 23 on the side of the spacer main body 40 facing the mounting substrate 2a.
- the cover 5 is made of glass that transmits ultraviolet rays emitted from the ultraviolet light emitting element 3.
- the ultraviolet light emitting element 3 includes a first electrode 31 and a second electrode 32, and the first electrode 31 and the second electrode 32 are disposed on one surface side in the thickness direction of the ultraviolet light emitting element 3.
- the first electrode 31 and the first conductor portion 21 are joined by the first joining portion 61 made of AuSn, and the second electrode 32 and the second conductor portion 22 are made of AuSn. Joined by the second joining portion 62.
- the second bonding metal layer 43 of the spacer 4 and the first bonding metal layer 23 of the mounting substrate 2a are bonded by a third bonding portion 63 formed of AuSn. In the light emitting device 1a having the above-described configuration, it is possible to improve the reliability and reduce the cost.
- a first joining portion 61 that is formed of AuSn and joins the first electrode 31 and the first conductor portion 21 exists between the first electrode 31 and the first conductor portion 21, and AuSn.
- the second joint portion 62 that joins the second electrode 32 and the second conductor portion 22 exists.
- the second bonding metal layer 43 and the first bonding metal layer 23 formed of AuSn are bonded between the second bonding metal layer 43 and the first bonding metal layer 23.
- the spacer 4 and the cover 5 constitute a cap 6 a that covers the ultraviolet light emitting element 3.
- the cap 6a is formed with a recess 663 for accommodating the ultraviolet light emitting element 3. Therefore, from a different perspective, the light emitting device 1a has the following configuration.
- the light emitting device 1a includes a mounting substrate 2a, an ultraviolet light emitting element 3 mounted on the mounting substrate 2a, and a cap 6a formed on the mounting substrate 2a and having a recess 663 for accommodating the ultraviolet light emitting element 3.
- the mounting substrate 2a includes a support body 20a, and a first conductor portion 21, a second conductor portion 22, and a first bonding metal layer 23 supported by the support body 20a.
- the 1st conductor part 21 and the 2nd conductor part 22 are arrange
- the cap 6 a has a front surface 661 and a back surface 662, and a cap body 660 having a recess 663 formed on the back surface 662, and a peripheral portion of the recess 663 on the back surface 662 of the cap body 660, facing the first bonding metal layer 23. And a second bonding metal layer 43 disposed.
- at least an ultraviolet light transmitting portion 666 between the surface 661 of the cap body 660 and the inner bottom surface 664 of the concave portion 663 is formed of glass that transmits ultraviolet light emitted from the ultraviolet light emitting element 3.
- the ultraviolet light emitting element 3 includes a first electrode 31 and a second electrode 32, and the first electrode 31 and the second electrode 32 are disposed on one surface side in the thickness direction of the ultraviolet light emitting element 3.
- the first conductor portion 21, the second conductor portion 22, and the first bonding metal layer 23 are laminated films made of the same material and the same thickness on the surface 201 side of the support 20a (in other words, (The 1st conductor part 21, the 2nd conductor part 22, and the 1st metal layer 23 for joining are comprised from the same laminated film by the surface 201 side of the support body 20a).
- the uppermost layer farthest from the support 20a in each of the first conductor portion 21, the second conductor portion 22, and the first bonding metal layer 23 is made of Au.
- the first electrode 31 and the first conductor portion 21 are joined by the first joining portion 61 made of AuSn, and the second electrode 32 and the second conductor portion 22 are made of AuSn. Joined by the second joining portion 62.
- the first bonding metal layer 23 and the second bonding metal layer 43 are bonded by a third bonding portion 63 formed of AuSn. In the light emitting device 1a having the above-described configuration, it is possible to improve the reliability and reduce the cost.
- the cap 6 a is disposed on the mounting substrate 2 a and has a spacer 4 formed with a through hole 41 that exposes the ultraviolet light emitting element 3.
- the cap 6 a is disposed on the spacer 4 so as to close the through hole 41 of the spacer 4.
- a cover 5 that is joined.
- the surface exposed by the through hole 41 in the cover 5 constitutes the inner bottom surface 664 of the recess 663.
- the cover 5 is made of glass that transmits ultraviolet rays emitted from the ultraviolet light emitting element 3.
- the spacer 4 includes a spacer main body 40 formed of Si, and a second bonding metal layer 43 disposed opposite to the first bonding metal layer 23 on the side of the spacer main body 40 facing the mounting substrate 2a. .
- the light emitting device 1 a ultraviolet rays radiated from the ultraviolet light emitting element 3 toward the inner bottom surface 664 of the recess 663 easily pass through the cover 5 and are emitted from the ultraviolet light emitting element 3 toward the inner side surface 665 of the recess 663.
- the ultraviolet rays that are generated are easily reflected by the spacers 4.
- the cap 6a is formed of an inorganic material.
- the third joint portion 63 (see FIGS. 1 and 3) is formed along the entire circumference of the outer peripheral edge 421 on the surface 42 of the spacer body 40 facing the mounting substrate 2a.
- the third joint portion 63 is preferably formed along the entire circumference of the outer peripheral edge of the back surface 662 of the cap body 660.
- the mounting substrate 2a, the spacer 4, and the cover 5 constitute a package 7a for housing the ultraviolet light emitting element 3.
- the light emitting device 1a is configured such that the third bonding portion 63 is formed along the entire circumference of the outer peripheral edge 421 on the surface 42 of the spacer body 40 facing the mounting substrate 2a. It becomes possible to hermetically seal.
- the mounting substrate 2a is a substrate on which the ultraviolet light emitting element 3 is mounted.
- “Mounting” is a concept that includes arranging and mechanically connecting the ultraviolet light emitting elements 3 and electrically connecting them.
- the mounting substrate 2a is configured so that one ultraviolet light emitting element 3 can be mounted as an example.
- the mounting substrate 2a is larger than the ultraviolet light emitting element 3 in plan view.
- the support 20a has a function of supporting the first conductor portion 21, the second conductor portion 22, and the first bonding metal layer 23. Further, the support 20 a has a function of electrically insulating the first conductor portion 21, the second conductor portion 22, and the first bonding metal layer 23. The support 20a preferably has a function as a heat sink for efficiently transmitting the heat generated by the ultraviolet light emitting element 3 to the outside.
- the mounting substrate 2a has a support 20a formed in a flat plate shape, and a first conductor portion 21, a second conductor portion 22, and a first bonding metal layer 23 on a surface 201 orthogonal to the thickness direction of the support 20a. Is formed.
- the outer peripheral shape of the support 20a is rectangular (right-angled quadrilateral).
- the outer peripheral shape of the support 20a is not limited to a rectangular shape, and may be, for example, a polygonal shape other than a rectangular shape, a circular shape, or the like.
- the first conductor portion 21 is a conductive layer to which the first electrode 31 of the ultraviolet light emitting element 3 is electrically connected.
- the second conductor portion 22 is a conductive layer to which the second electrode 32 of the ultraviolet light emitting element 3 is electrically connected.
- Each of the first conductor portion 21, the second conductor portion 22, and the first bonding metal layer 23 can be constituted by, for example, a laminated film of a Ti film, a Pt film, and an Au film.
- Each of the first conductor part 21, the second conductor part 22, and the first bonding metal layer 23 is, for example, a laminated film of an Al film, a Ni film, a Pd film, and an Au film, or a laminated film of a Ni film and an Au film.
- a laminated film of a Cu film, a Ni film, and an Au film may be used.
- the uppermost layer farthest from the support 20a is formed of Au, and the most on the support 20a. It is preferable that the nearest lowermost layer is formed of a material having high adhesion to the support 20a.
- the 1st conductor part 21, the 2nd conductor part 22, and the 1st metal part 23 for joining may be comprised not only by a laminated film but by a single layer film.
- the mounting substrate 2a includes the first conductor portion 21, the second conductor portion 22, and the first joint so that the first conductor portion 21, the second conductor portion 22, and the first joining metal layer 23 are spatially separated.
- a metal layer 23 is disposed.
- a groove 203 is formed between the first conductor portion 21 and the second conductor portion 22.
- the inner surface of the groove 203 is constituted by a part of the surface 201 of the support 20 a and the opposing surfaces of the first conductor portion 21 and the second conductor portion 22.
- the first conductor portion 21, the second conductor portion 22, and the first bonding metal layer 23 are formed on the surface 201 of the support 20a with the same thickness.
- the mounting substrate 2a has the surface 211 of the first conductor portion 21, the surface 212 of the second conductor portion 22, and the surface 231 of the first bonding metal layer 23 (see FIG. 8) aligned on one plane. It is configured.
- the mounting substrate 2a includes a first external connection electrode 24 and a second external connection electrode 25, and a first through wiring 26 and a second through wiring 27 that are formed through the support 20a in the thickness direction.
- the first external connection electrode 24 and the second external connection electrode 25 are formed on the back surface 202 of the support 20a.
- the first external connection electrode 24 is electrically connected to the first conductor portion 21 via the first through wiring 26.
- the second external connection electrode 25 is electrically connected to the second conductor portion 22 via the second through wiring 27. Therefore, the light emitting device 1a can be surface-mounted on the wiring board 10a, for example, as shown in FIG.
- the wiring board 10a is a mother board.
- the wiring board 10a can be formed by a metal base printed wiring board, for example.
- the wiring board 10a is formed on, for example, the metal plate 111, the Au layer 112 formed on the metal plate 111, the insulating resin layer 113 formed on the Au layer 112, and the insulating resin layer 113.
- the first wiring part 114 and the second wiring part 115 are provided.
- the metal plate 111 is composed of a Cu plate, but is not limited thereto, and may be composed of, for example, an Al plate.
- the first external connection electrode 24 is joined to and electrically connected to the first wiring part 114 by the fifth joining part 104 made of solder. Further, in the ultraviolet LED module, the second external connection electrode 25 is joined and electrically connected to the second wiring part 115 by the sixth joint part 105 made of solder.
- the light emitting device 1a is secondarily mounted on the wiring board 10a. In the light emitting device 1a, since each of the first joint 61, the second joint 62, and the third joint 63 is formed of AuSn, the light-emitting device 1a is formed of SnCuAg which is a kind of lead-free solder other than AuSn.
- the light emitting device 1a can suppress remelting of the first joint portion 61, the second joint portion 62, and the third joint portion 63 when, for example, the secondary mounting is performed on the wiring board 10a or the like.
- the wiring board 10a is preferably larger than the light emitting device 1a in plan view. Thereby, the ultraviolet LED module can further improve heat dissipation.
- the wiring board 10a preferably includes a resist layer 116 that covers a region that does not overlap the light emitting device 1a in each of the first wiring portion 114 and the second wiring portion 115.
- a white resist can be adopted.
- the white resist include a resin containing a white pigment.
- the white pigment include barium sulfate (BaSO 4 ) and titanium dioxide (TiO 2 ).
- the resin include a silicone resin.
- ASA COLOR (registered trademark) RESIST INK which is a white resist material made of silicone manufactured by Asahi Rubber Co., Ltd., can be used.
- the resist layer 116 can be formed by, for example, a coating method.
- Each of the first external connection electrode 24 and the second external connection electrode 25 can be composed of a laminated film of a Ti film, a Pt film, and an Au film, for example.
- Each of the first conductor portion 21 and the second conductor portion 22 includes, for example, a laminated film of an Al film, a Ni film, a Pd film, and an Au film, a laminated film of a Ni film and an Au film, a Cu film, a Ni film, and Au. You may comprise by the laminated film etc. with a film
- the uppermost layer farthest from the support body 20a is formed of Au
- the lowermost layer closest to the support body 20a is the support body 20a. It is preferable that it is made of a material having high adhesion.
- the first external connection electrode 24 and the second external connection electrode 25 are not limited to a laminated film, and may be formed of a single layer film.
- the first through wiring 26 and the second through wiring 27 can be formed of W, Cu, or the like, for example.
- the first through wiring 26 and the second through wiring 27 are preferably disposed so as not to overlap the ultraviolet light emitting element 3 in the thickness direction of the ultraviolet light emitting element 3.
- the support 20a is preferably made of AlN ceramic.
- the light emitting device 1a can efficiently dissipate the heat generated in the ultraviolet light emitting element 3 from the support 20a as compared with the case where the support 20a is formed of a resin substrate. Therefore, the light emitting device 1a can improve heat dissipation.
- AlN ceramics have electrical insulation, but have relatively high thermal conductivity and higher thermal conductivity than Si.
- the ultraviolet light emitting element 3 is an ultraviolet LED chip.
- the chip size of the ultraviolet light emitting element 3 is set to 400 ⁇ m ⁇ (400 ⁇ m ⁇ 400 ⁇ m), but is not limited thereto.
- the chip size of the ultraviolet light emitting element 3 can be appropriately set within a range of, for example, about 200 ⁇ m ⁇ (200 ⁇ m ⁇ 200 ⁇ m) to 1 mm ⁇ (1 mm ⁇ 1 mm).
- the planar shape of the ultraviolet light emitting element 3 is not limited to a square shape, and may be, for example, a rectangular shape.
- the ultraviolet light emitting element 3 is flip-chip mounted on the mounting substrate 2a.
- the ultraviolet light emitting element 3 includes a substrate 30, and on the first surface 301 side of the substrate 30, the first conductivity type semiconductor layer 33 and the second conductivity type are sequentially arranged from the side closer to the first surface 301.
- a semiconductor layer 35 is formed.
- the ultraviolet light emitting element 3 includes the semiconductor multilayer film 39 having the first conductive semiconductor layer 33 and the second conductive semiconductor layer 35.
- the first conductivity type semiconductor layer 33 is composed of an n-type semiconductor layer
- the second conductivity type semiconductor layer 35 is composed of a p-type semiconductor layer.
- the first conductive semiconductor layer 33 may be formed of a p-type semiconductor layer
- the second conductive semiconductor layer 35 may be formed of an n-type semiconductor layer.
- the substrate 30 has a function of supporting the semiconductor multilayer film 39.
- the semiconductor multilayer film 39 can be formed by, for example, an epitaxial growth method.
- an epitaxial growth method for example, a crystal growth method such as a MOVPE (metal organic vapor phase epitaxy) method, an HVPE (hydride vapor phase epitaxy) method, or an MBE (molecular molecular beam epitaxy) method can be adopted.
- the semiconductor multilayer film 39 may contain impurities such as hydrogen, carbon, oxygen, silicon, and iron that are inevitably mixed when the semiconductor multilayer film 39 is formed.
- the substrate 30 can be composed of a crystal growth substrate when the semiconductor multilayer film 39 is formed.
- the substrate 30 is preferably composed of a sapphire substrate.
- the substrate 30 may be a substrate formed of a material that can efficiently transmit ultraviolet rays emitted from the semiconductor multilayer film 39, and is not limited to a sapphire substrate, and may be a single crystal AlN substrate, for example.
- the substrate 30 is preferably transparent to ultraviolet rays emitted from the semiconductor multilayer film 39.
- a second surface 302 opposite to the first surface 301 of the substrate 30 constitutes a light extraction surface.
- the semiconductor multilayer film 39 includes a buffer layer between the substrate 30 and the first conductivity type semiconductor layer 33.
- the buffer layer is preferably composed of, for example, an AlN layer.
- the semiconductor multilayer film 39 preferably includes a light emitting layer 34 between the first conductive semiconductor layer 33 and the second conductive semiconductor layer 35.
- the ultraviolet rays emitted from the semiconductor multilayer film 39 are ultraviolet rays emitted from the light emitting layer 34, and the emission peak wavelength is defined by the material of the light emitting layer 34.
- the light emitting layer 34 preferably has a single quantum well structure, a multiple quantum well structure, or the like, but is not limited thereto.
- the first conductive semiconductor layer 33, the light emitting layer 34, and the second conductive semiconductor layer 35 may form a double heterostructure.
- the first conductive type semiconductor layer 33 can be composed of, for example, an n-type AlGaN layer.
- the first conductivity type semiconductor layer 33 is not limited to a single layer structure, and may have a multilayer structure.
- the second conductive semiconductor layer 35 is not limited to a single layer structure, and may have a multilayer structure.
- the second conductivity type semiconductor layer 35 may have a multilayer structure including, for example, a p-type electron block layer, a p-type semiconductor layer, and a p-type contact layer.
- the p-type semiconductor layer is a layer for transporting holes to the light emitting layer 34.
- the p-type electron blocking layer is a layer for suppressing electrons that have not been recombined with holes in the light emitting layer 34 from leaking (overflowing) to the p-type semiconductor layer side.
- the composition of the p-type electron blocking layer is preferably set so that the band gap energy is higher than that of the p-type semiconductor layer and the light emitting layer 34.
- the p-type contact layer is a layer provided in order to reduce the contact resistance with the second electrode 32 and obtain good ohmic contact with the second electrode 32.
- the p-type electron block layer and the p-type semiconductor layer can be composed of, for example, AlGaN layers having different compositions. Further, the p-type contact layer can be constituted by, for example, a p-type GaN layer.
- the ultraviolet light emitting element 3 is removed by etching a part of the semiconductor multilayer film 39 from the surface 391 side of the semiconductor multilayer film 39 to the middle of the first conductivity type semiconductor layer 33.
- the ultraviolet light emitting element 3 has a mesa structure 37 formed by etching a part of the semiconductor multilayer film 39.
- a step is formed between the surface 351 of the second conductivity type semiconductor layer 35 and the surface 331 of the first conductivity type semiconductor layer 33.
- the first electrode 31 is formed on the exposed surface 331 of the first conductive type semiconductor layer 33
- the second electrode 32 is formed on the surface 351 of the second conductive type semiconductor layer 35.
- the conductivity type (first conductivity type) of the first conductivity type semiconductor layer 33 is n-type
- the conductivity type (second conductivity type) of the second conductivity type semiconductor layer 35 is p-type
- the first electrode 31 and the second electrode 32 constitute a negative electrode and a positive electrode, respectively.
- the first electrode 31 and the second electrode 32 constitute a positive electrode and a negative electrode, respectively.
- the area of the surface 351 of the second conductivity type semiconductor layer 35 is preferably larger than the area of the exposed surface 331 of the first conductivity type semiconductor layer 33. Thereby, the ultraviolet light emitting element 3 can widen the region where the second conductive semiconductor layer 35 and the first conductive semiconductor layer 33 overlap each other in the thickness direction, thereby improving the light emission efficiency. It becomes possible.
- the ultraviolet light emitting element 3 includes the protruding structure portion 36.
- the protruding structure 36 preferably protrudes from the surface 351 side of the second conductive type semiconductor layer 35 of the ultraviolet light emitting element 3 to the surface 212 side of the second conductor portion 22 and contacts the surface 212 of the second conductor portion 22. Further, it is preferable that the protruding structure portion 36 is located along the outer periphery of the second electrode 32. As shown in FIG. 1, the second bonding portion 62 is formed so as to fill a space 9 (see FIG. 1) surrounded by the second electrode 32, the protruding structure portion 36, and the second conductor portion 22. It is preferable.
- the protrusion structure portion 36 is disposed along the outer periphery of the second electrode 32 in a plan view and surrounds the second joint portion 62.
- the portion where the protruding structure portion 36 overlaps in the plan view has the same height as or lower than the portion where the second conductor portion 22 is joined to the second joint portion 62.
- the light emitting device 1a can reduce the thermal resistance between the ultraviolet light emitting element 3 and the mounting substrate 2a. Furthermore, since the light emitting device 1a can manage the thickness of the second joint portion 62 by the protruding structure portion 36, the thickness and size accuracy of the second joint portion 62 can be increased, and the thermal resistance can be reduced. Variations in thermal resistance can be reduced. “The thickness of the second joint 62 can be managed by the protrusion structure 36” means that the second joint is determined by the protrusion amount H1 of the protrusion structure 36 along the thickness direction of the ultraviolet light emitting element 3 (see FIG. 6). This means that the thickness of the part 62 can be defined. Therefore, the light emitting device 1a can reduce variations in thermal resistance among products.
- the protrusion structure portion 36 in plan view means a shape in which the protrusion structure portion 36 is viewed from the thickness direction of the protrusion structure portion 36 along the thickness direction of the ultraviolet light emitting element 3.
- the protruding structure portion 36 is formed along the outer periphery of the second electrode 32 and protrudes on the surface 351 side of the second conductivity type semiconductor layer 35.
- the second electrode 32 is larger than the first electrode 31, and the protruding structure portion 36 is formed over the entire outer periphery of the second electrode 32.
- the light emitting device 1a can further suppress occurrence of a short circuit between the second electrode 32 and the first electrode 31 due to AuSn forming the second bonding portion 62 at the time of manufacture.
- the ultraviolet light emitting element 3 is mounted on the mounting substrate 2a, the light emitting device 1a can improve the reproducibility of the shape of the second joint portion 62, and can reduce variations in thermal resistance. .
- the light emitting device 1 a can manage the thickness of the second joint portion 62 by the protruding structure portion 36 without being affected by the thickness of the first joint portion 61. Therefore, the light emitting device 1a can increase the accuracy of the thickness and size of the second joint portion 62 that joins the second electrode 32 and the second conductor portion 22 having a large heat radiation area. Thereby, the light emitting device 1a can reduce the thermal resistance and the variation of the thermal resistance.
- the protrusion structure portion 36 is preferably formed along the outer periphery of the second electrode 32 and has a constant width W1 (see FIG. 6). Thereby, the light emitting device 1a suppresses the occurrence of a short circuit due to the solder between the second electrode 32 and the first electrode 31 while increasing the contact area between the second electrode 32 and the second conductivity type semiconductor layer 35. It becomes possible.
- the width W1 of the protruding structure 36 is preferably set in the range of about 5 ⁇ m to 10 ⁇ m, for example.
- the ultraviolet light emitting element 3 is preferably formed so that the second electrode 32 covers substantially the entire surface 351 of the second conductivity type semiconductor layer 35.
- the “substantially the entire surface 351 of the second conductivity type semiconductor layer 35” is not limited to the entire surface 351.
- the ultraviolet light emitting element 3 includes an insulating film 38 to be described later and the outer peripheral portion of the surface 351 of the second conductive type semiconductor layer 35 is covered with the insulating film 38, “the surface 351 of the second conductive type semiconductor layer 35”.
- the “substantially the entire surface” means a portion of the surface 351 of the second conductivity type semiconductor layer 35 that is not covered with the insulating film 38.
- the ultraviolet light emitting element 3 is preferably formed so that the second electrode 32 covers the surface 351 of the second conductivity type semiconductor layer 35 in a planar shape. Thereby, the light-emitting device 1a can improve heat dissipation.
- the thickness of the first conductor portion 21 and the second conductor portion 22 is preferably larger than the distance between the second electrode 32 and the second conductor portion 22.
- the “interval between the second electrode 32 and the second conductor portion 22” means the interval between the center portion of the surface 321 (see FIG. 6) of the second electrode 32 and the surface 212 of the second conductor portion 22.
- the distance between the second electrode 32 and the second conductor portion 22 can be determined by the protruding amount H1 of the protruding structure portion 36. In other words, the distance between the second electrode 32 and the second conductor portion 22 is substantially the same as the protrusion amount H1 (see FIG. 6) of the protrusion structure portion 36.
- the light emitting device 1a can reduce the flow rate of the protruding AuSn at the groove 203 even when a part of the molten AuSn protrudes from the space 9 at the time of manufacture.
- the side surface of the second conductor portion 22 can function as a solder guiding portion that guides the protruding AuSn toward the surface 201 side of the support 20a at the time of manufacture.
- the light emitting device 1 a can suppress the occurrence of a short circuit between the second electrode 32 and the first electrode 31 due to AuSn protruding from the space 9.
- the surface 201 of the support 20a preferably has lower solder wettability than the side surfaces of the first conductor portion 21 and the second conductor portion 22.
- the ultraviolet light emitting element 3 is preferably provided with an insulating film 38.
- the insulating film 38 is preferably formed on the surface 351 of the second conductivity type semiconductor layer 35 so as to surround the contact region of the second electrode 32 with the second conductivity type semiconductor layer 35.
- the second electrode 32 is formed across the surface 351 of the second conductivity type semiconductor layer 35 and the surface of the insulating film 38, and the second conductivity type is more than the center portion of the second electrode 32.
- the outer peripheral portion protruding in a direction away from the semiconductor layer 35 also serves as the protruding structure portion 36.
- the light emitting device 1a can increase the bonding area between the second electrode 32 and the second conductor portion 22, and can improve the heat dissipation and reduce the contact resistance.
- the insulating film 38 is a silicon oxide film.
- the insulating film 38 may be an electrical insulating film. Accordingly, the material of the insulating film 38 is not limited to SiO 2 as long as it is an electrically insulating material. For example, Si 3 N 4 , Al 2 O 3 , TiO 2 , Ta 2 O 5 , ZrO 2 , Y 2 O 3 , CeO 2 , Nb 2 O 5 and the like can be employed.
- the insulating film 38 preferably has a function as a passivation film for protecting the function of the semiconductor multilayer film 39, and the material thereof is preferably SiO 2 or Si 3 N 4 .
- the thickness of the insulating film 38 is set to 1 ⁇ m.
- the insulating film 38 can be formed by, for example, a chemical vapor deposition (CVD) method, a vapor deposition method, a sputtering method, or the like.
- the insulating film 38 is not limited to a single layer film, and may be a multilayer film.
- the multilayer film provided as the insulating film 38 may be composed of a dielectric multilayer film for reflecting light generated in the semiconductor multilayer film 39.
- the insulating film 38 is preferably formed across the surface 371 of the mesa structure 37, the side surface 372 of the mesa structure 37, and the surface 331 of the first conductivity type semiconductor layer 33.
- a surface 371 of the mesa structure 37 is a surface 351 of the second conductivity type semiconductor layer 35.
- the portion of the insulating film 38 formed on the surface 331 of the first conductive type semiconductor layer 33 is formed in a pattern surrounding the contact region of the first electrode 31 with the first conductive type semiconductor layer 33. Is preferred.
- the first electrode 31 preferably includes a first ohmic electrode layer 31A and a first pad electrode layer 31B.
- the first ohmic electrode layer 31 ⁇ / b> A is formed on the surface 331 of the first conductivity type semiconductor layer 33 in order to obtain ohmic contact with the first conductivity type semiconductor layer 33.
- the first pad electrode layer 31B is formed so as to cover the first ohmic electrode layer 31A so as to be bonded to the mounting substrate 2a via the first bonding portion 61.
- the first ohmic electrode layer 31A is formed by, for example, forming a first laminated film of an Al film, a Ni film, an Al film, a Ni film, and an Au film on the surface 331 of the first conductivity type semiconductor layer 33, and then performing an annealing process. And can be formed by slow cooling.
- the first ohmic electrode layer 31A is constituted by a solidified structure mainly composed of Ni and Al.
- the solidified structure means a crystal structure formed as a result of transformation of the molten metal.
- the solidified structure containing Ni and Ai as main components may contain, for example, Au and N as impurities.
- the thicknesses of the Al film, Ni film, Al film, Ni film, and Au film are set in the range of 10 to 200 nm, respectively.
- the first ohmic electrode layer 31 ⁇ / b> A is not limited to a configuration having Ni and Al as main components, and may be formed of, for example, another material containing Ti or the like as a component.
- the first pad electrode layer 31B can be composed of a laminated film of a Ti film and an Au film, for example.
- As the first pad electrode layer 31B if the outermost surface side is an Au film, another laminated film can be adopted. In other words, it is preferable that the first electrode 31 includes the first pad electrode layer 31B whose outermost surface is constituted by the surface of the Au film.
- the first pad electrode layer 31B can be formed by, for example, a vapor deposition method or the like.
- the first pad electrode layer 31 ⁇ / b> B is not limited to a single layer structure of an Au film, and may be configured by a laminated film of a Ti film and an Au film, for example.
- the ultraviolet light emitting element 3 may comprise the shape of the 1st electrode 31 whole only by 31 A of 1st ohmic electrode layers, for example, between 31 A of 1st ohmic electrode layers, and the 1st pad electrode layer 31B.
- the structure provided with another electrode layer may be sufficient.
- the second electrode 32 preferably includes a second ohmic electrode layer 32A and a second pad electrode layer 32B.
- the second ohmic electrode layer 32 ⁇ / b> A is formed on the surface 351 of the second conductive semiconductor layer 35 in order to obtain ohmic contact with the second conductive semiconductor layer 35.
- the second pad electrode layer 32B is formed so as to cover the second ohmic electrode layer 32A in order to be bonded to the mounting substrate 2a via the second bonding portion 62.
- the second ohmic electrode layer 32A can be formed, for example, by forming a second stacked film of a Ni film and an Au film on the surface 351 of the second conductivity type semiconductor layer 35 and then performing an annealing process. .
- the second pad electrode layer 32B can be constituted by a laminated film of a Ti film and an Au film, for example.
- the second pad electrode layer 32B if the outermost surface side is an Au film, another laminated film can be adopted.
- the second electrode 32 preferably includes a second pad electrode layer 32B whose outermost surface is constituted by the surface of the Au film.
- the second pad electrode layer 32B can be formed by, for example, a vapor deposition method or the like.
- the second pad electrode layer 32B is not limited to a single layer structure of an Au film, and may be configured by a laminated film of a Ti film and an Au film, for example.
- the ultraviolet light emitting element 3 may comprise the shape of the 2nd electrode 32 whole only by the 2nd ohmic electrode layer 32A, for example, and between the 2nd ohmic electrode layer 32A and the 2nd pad electrode layer 32B.
- the structure provided with another electrode layer may be sufficient.
- the second pad electrode layer 32B is preferably formed across the surface of the second ohmic electrode layer 32A and the surface of the insulating film 38.
- the outer peripheral portion of the second electrode 32 that protrudes away from the second conductive type semiconductor layer 35 than the central portion also serves as the protruding structure portion 36.
- the light emitting device 1a can increase the bonding area between the ultraviolet light emitting element 3 and the mounting substrate 2a, thereby reducing the thermal resistance, and is generated in the semiconductor multilayer film 39 of the ultraviolet light emitting element 3. Heat is easily transmitted to the mounting substrate 2 a side through the protruding structure 36. Therefore, the light emitting device 1a can improve heat dissipation.
- the ultraviolet light-emitting element 3 has a light emission peak wavelength in a wavelength range of 210 nm to 280 nm. That is, the ultraviolet light emitting element 3 is preferably configured to emit ultraviolet light having a light emission peak wavelength in the UV-C wavelength region. Thereby, the light emitting device 1a can be suitably used for, for example, sterilization.
- the “UV-C wavelength range” is, for example, 100 nm to 280 nm according to the classification by the wavelength of ultraviolet rays in the International Commission on Illumination (CIE).
- the ultraviolet light emitting element 3 has a light emission peak wavelength in a wavelength range of 240 nm to 280 nm.
- “sterilizing ultraviolet rays” are defined as those in the wavelength region indicated by a sterilizing effect curve having a maximum sterilizing effect in the vicinity of a wavelength of 260 nm among ultraviolet rays.
- FIG. 9 is a diagram in which the above-mentioned sterilization effect curve is rewritten. In FIG. 9, the horizontal axis represents the wavelength, and the vertical axis represents the bactericidal effect relative value.
- the “bactericidal effect curve” is a curve based on the data of Reference 1 [M.
- the bactericidal effect curve in the light emitting device 1a, if the wavelength of ultraviolet rays emitted from the ultraviolet light emitting element 3 is in the range of 240 nm to 280 nm, the relative value of the bactericidal effect is 60% or more, and a relatively high bactericidal effect is obtained. It is assumed that it will be obtained.
- the ultraviolet light emitting element 3 has an emission peak wavelength set to 265 nm.
- the height of the spacer 4 is larger than the thickness of the ultraviolet light emitting element 3. Thereby, the light emitting device 1a can suppress the ultraviolet light emitting element 3 from coming into contact with the cover 5.
- the spacer 4 preferably has a rectangular outer peripheral shape in plan view.
- the spacer 4 is preferably smaller than the mounting substrate 2a in plan view. More specifically, the outer peripheral shape of the spacer 4 in plan view is preferably smaller than the outer peripheral shape of the mounting substrate 2a in plan view. Furthermore, it is preferable that the outer peripheral line in the plan view of the spacer 4 is inside the outer peripheral line in the plan view of the mounting substrate 2a. Thereby, the light emitting device 1a can suppress the spacer 4 from protruding from the mounting substrate 2a during manufacture.
- the through hole 41 is formed in the spacer body 40. It is preferable that the opening area of the through hole 41 gradually increases as the distance from the mounting substrate 2a increases. In short, the opening area of the through hole 41 of the spacer 4 gradually increases as the distance from the mounting substrate 2a increases in the direction along the thickness direction of the mounting substrate 2a.
- the spacer 4 can function as a reflector that reflects the ultraviolet rays radiated from the ultraviolet light emitting elements 3 to the side toward the cover 5 side.
- the spacer body 40 is made of Si as described above.
- the spacer 4 can constitute a reflector having a relatively high reflectance without forming a reflective film such as an Al film on the inner surface of the through hole 41 (the inner surface 665 of the recess 663). Thereby, the light-emitting device 1a can achieve cost reduction and high output.
- the through hole 41 of the spacer 4 is preferably a quadrangular pyramid tapered hole. More specifically, the spacer body 40 is preferably formed from a single crystal Si substrate 400 having a (401) surface 401.
- the spacer 4 is a preferred embodiment in which the inner side surface of the through hole 41 is a surface along the ⁇ 111 ⁇ plane.
- the spacer 4 is a preferred embodiment in which the crystal plane constituting the inner surface of the through hole 41 is a ⁇ 111 ⁇ plane.
- the angle ⁇ formed between the back surface 402 of the single crystal Si substrate 400 and the inner surface of the through hole 41 can be approximately 55 ° (theoretically, 54.7 °). .
- Such a through hole 41 can be easily formed by etching using an alkaline solution.
- the through hole 41 can be formed by crystal anisotropic etching.
- a TMAH (tetramethylammonium hydroxide) aqueous solution can be used as the alkaline solution.
- the alkaline solution is not limited to the TMAH aqueous solution, and for example, a TMAH solution heated to about 85 ° C., a KOH aqueous solution, ethylenediamine pyrocatechol, or the like may be used.
- Etching at the time of forming the through hole 41 may be performed in two stages.
- etching is performed from the surface 401 of the single crystal Si substrate 400 to the middle in the thickness direction of the single crystal Si substrate 400 with a KOH aqueous solution, and then the back surface of the single crystal Si substrate 400 with a TMAH aqueous solution. Etching may be performed until 402 is reached.
- the facing surface 42 of the spacer body 40 facing the mounting substrate 2 a is constituted by the back surface 402 of the single crystal Si substrate 400.
- a silicon oxide film 44 is formed between a surface 42 of the spacer body 40 facing the mounting substrate 2 a and the second bonding metal layer 43.
- the second bonding metal layer 43 is preferably composed of a laminated film of a base film 431 and an Au film 432, for example.
- Al can be employed.
- the spacer 4 may be configured such that the inner surface of the through hole 41 is a surface of a silicon oxide film formed along the ⁇ 111 ⁇ plane.
- the ⁇ 111 ⁇ plane which is the crystal plane constituting the inner side surface of the through hole 41 is covered with the silicon oxide film, so that the manufacturing yield can be improved and the ultraviolet output can be improved. It is possible to suppress the change with time.
- the silicon oxide film may be formed of a natural oxide film or a thermal oxide film.
- the glass forming the cover 5 contains an alkaline component, and the spacer 4 and the cover 5 are preferably directly joined.
- the cover 5 and the spacer 4 can be directly bonded by anodic bonding, and the manufacturing cost can be reduced. It becomes possible.
- the alkali component include Na, K, Na 3 O, and K 2 O. “Directly bonded” means bonded without using a bonding material or the like.
- the glass forming the cover 5 preferably has a transmittance of 70% or more, more preferably 80% or more, for the ultraviolet rays emitted from the ultraviolet light emitting element 3.
- borosilicate glass can be adopted as the glass for forming the cover 5.
- Borosilicate glass contains an alkali component.
- the light emitting device 1a preferably has a smaller difference in linear expansion coefficient between the cover 5 and the spacer body 40.
- the cover 5 is preferably smaller than the mounting substrate 2a in plan view. More specifically, the cover 5 is preferably the same size as the spacer 4 in plan view. In short, the outer peripheral shape of the cover 5 in plan view is preferably the same as the outer peripheral shape of the spacer 4 in plan view. Therefore, it is preferable that the outer peripheral shape of the cover 5 in a plan view is a rectangular shape.
- the cap 6a when the cap 6a is formed, for example, the first wafer on which the plurality of spacers 4 are formed and the second wafer that is the basis of the plurality of covers 5 are bonded at the wafer level. After that, it can be divided into a plurality of caps 6a.
- the cap 6a is preferably smaller than the mounting substrate 2a in plan view. Thereby, in the light-emitting device 1a, it is possible to prevent the cap 6a from protruding from the mounting substrate 2a even when the cap 6a is displaced during manufacture.
- the cover 5 is not limited to a flat plate shape, and may be a shape in which lenses are integrally formed, for example. In short, in the light emitting device 1a, part or all of the cover 5 may constitute a lens.
- the light emitting device 1a preferably has an inert gas atmosphere in a space 8 surrounded by the mounting substrate 2a, the spacer 4, and the cover 5.
- the light emitting device 1a preferably has a space surrounded by the mounting substrate 2a and the cap 6a as an inert gas atmosphere.
- the light emitting device 1a can suppress oxidation of the ultraviolet light emitting element 3, the first conductor portion 21, the second conductor portion 22, and the like, and can further improve the reliability.
- the inert gas atmosphere is preferably an N 2 gas atmosphere.
- the inert gas atmosphere preferably has a high purity of inert gas, but does not require 100% purity.
- the inert gas atmosphere may contain, for example, about 100 to 200 ppm of O 2 inevitably mixed.
- the inert gas is not limited to the N 2 gas, for example, Ar gas, or a mixed gas of N 2 gas and Ar gas.
- the light emitting device 1a includes a first conductor part 21, a second conductor part 22, and a first joining metal layer 23, and a first joining part 61, a second joining part 62, and a third joining part 63, respectively.
- the first barrier layer 81, the second barrier layer 82, and the third barrier layer 83 are preferably formed.
- the first barrier layer 81, the second barrier layer 82, and the third barrier layer 83 are preferably formed of the same material and the same thickness.
- the first barrier layer 81, the second barrier layer 82, and the third barrier layer 83 can have substantially the same barrier properties at the time of manufacture. Therefore, in the light emitting device 1a, it is possible to improve the bonding property of the ultraviolet light emitting element 3 and the cap 6a to the mounting substrate 2a at the time of manufacture.
- the first electrode 31 includes a first pad electrode layer 31B whose outermost surface is configured by the surface of the Au film, and the second electrode 32 is configured by the surface of the Au film.
- the second bonding electrode layer 32B is preferably provided, and the second bonding metal layer 43 is preferably formed of a laminated film of a base film and an Au film.
- the following first step, second step, third step, and fourth step are sequentially performed.
- a laminated structure of the silicon oxide film 44 and the second bonding metal layer 43 is formed on the back surface 402 of the single crystal Si substrate 400, and then a region where the through-hole 41 of the single crystal Si substrate 400 is to be formed. Is etched to form the through hole 41 to form the spacer 4 (FIG. 7A).
- the silicon oxide film 44 can be formed using a thin film formation technique, a photolithography technique, an etching technique, and the like.
- the second bonding metal layer 43 can be formed using a thin film formation technique, a photolithography technique, an etching technique, and the like.
- an appropriate etching mask is formed on each of the front surface 401 and the back surface 402 side of the single crystal Si substrate 400, and then etching is performed from the front surface 401 of the single crystal Si substrate 400 with a TMAH aqueous solution.
- the cap 6a is formed by joining the spacer 4 and the cover 5 (FIG. 7B). More specifically, the cap 6a is formed by directly joining the spacer 4 and the cover 5 by anodic bonding.
- anodic bonding for example, in a vacuum atmosphere, the peripheral portion of the through hole 41 in the spacer main body 40 and the peripheral portion of the cover 5 are brought into direct contact with each other, and the spacer 4 and the cover 5 are laminated on the spacer.
- a predetermined DC voltage is applied with 4 being the high potential side and the cover 5 being the low potential side.
- the predetermined DC voltage is, for example, 600V.
- a predetermined DC voltage is applied for a predetermined time in a state where the stacked body of the spacer 4 and the cover 5 is heated to a predetermined bonding temperature, and then the temperature of the stacked body is lowered.
- the bonding temperature is 400 ° C., for example.
- the first step and the second step described above it is preferable to perform the first step and the second step described above at the wafer level. More specifically, in the first step, it is preferable to form a plurality of spacers 4 on the first wafer from which the single crystal Si substrate 400 is based.
- the second step when the cap 6a is formed, for example, the first wafer on which the plurality of spacers 4 are formed and the second wafer that is the basis of the plurality of covers 5 are bonded at the wafer level, and then the plurality of caps are formed. It is preferable to divide into 6a.
- the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73 which are the origins of the first joint 61, the second joint 62, and the third joint 63, are formed on the mounting substrate 2a.
- FIG. 7C More specifically, in the third step, on the surface 211 side of the first conductor portion 21, the surface 212 side of the second conductor portion 22, and the surface 231 side of the first bonding metal layer 23 of the mounting substrate 2 a, A 1AuSn layer 71, a second AuSn layer 72, and a third AuSn layer 73 are formed.
- the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73 can be formed by, for example, a vapor deposition method, a plating method, or the like.
- the thicknesses of the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73 are set to the same value.
- the area of the surface of the first AuSn layer 71 is set smaller than the area of the surface 311 of the first electrode 31 (see FIG. 6).
- the area of the surface of the second AuSn layer 72 is set smaller than the area of the surface 321 (see FIG. 6) of the second electrode 32.
- the area of the surface of the third AuSn layer 73 is set smaller than the area of the surface 231 (see FIGS. 7C and 8) of the first bonding metal layer 23.
- the thicknesses of the first AuSn layer 71 and the second AuSn layer 72 are the projection amount H1 (see FIG. 6) of the projection structure portion 36 of the ultraviolet light emitting element 3, the second electrode 32 and the first electrode 32 in the thickness direction of the ultraviolet light emitting element 3.
- the height is set to be larger by a predetermined thickness ( ⁇ ) than the sum (H1 + H2) of the height H2 (see FIG. 6) of the step with the electrode 31. That is, the thicknesses of the first AuSn layer 71 and the second AuSn layer 72 are H1 + H2 + ⁇ .
- the thicknesses of the first AuSn layer 71 and the second AuSn layer 72 may be set to about 3 ⁇ m. In this case, ⁇ is 1 ⁇ m.
- the first AuSn layer 71 and the second AuSn layer 72 are preferably formed in the center of the region of the mounting substrate 2a that faces the first electrode 31 and the second electrode 32, respectively.
- the second AuSn layer 72 is disposed on the surface 212 of the second conductor portion 22 so as to be located inside the vertical projection region of the protruding structure portion 36 and away from the vertical projection region.
- the vertical projection region of the projection structure 36 means a projection region in the thickness direction of the projection structure 36.
- the vertical projection region of the projection structure 36 means a vertical projection region in which the projection direction is along the thickness direction of the projection structure 36.
- the vertical projection region of the protrusion structure portion 36 means a vertical projection region onto a plane orthogonal to the thickness direction of the protrusion structure portion 36.
- the first AuSn layer 71 and the second AuSn layer 72 have a composition ratio that is smaller than the eutectic composition (70 at% Au, 30 at% Sn) and melts at a temperature of, for example, 300 ° C. or more and less than 400 ° C. (for example, 60 at% Au, 40 at% Sn) is preferred.
- the first barrier layer 81, the second conductor portion 22, the first bonding metal layer 23, the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73 It is preferable to form the second barrier layer 82 and the third barrier layer 83, respectively.
- the first barrier layer 81, the second barrier layer 82, and the third barrier layer 83 are the first AuSn layer 71, the second AuSn layer 72, the third AuSn layer 73, the first conductor portion 21, the second conductor portion 22, and the first bonding layer.
- This is a layer having a function of a diffusion barrier that suppresses fluctuation of the composition of AuSn due to diffusion of metal (for example, Sn) between the metal layer 23.
- the first barrier layer 81, the second barrier layer 82, and the third barrier layer 83 As a material of the first barrier layer 81, the second barrier layer 82, and the third barrier layer 83, for example, Pt can be adopted, but not limited to this, Pd or the like can also be adopted.
- the thicknesses of the first barrier layer 81, the second barrier layer 82, and the third barrier layer 83 are set to the same value.
- the thicknesses of the first barrier layer 81, the second barrier layer 82, and the third barrier layer 83 are preferably set to about 0.2 ⁇ m, for example.
- the first barrier layer 81, the second barrier layer 82, and the third barrier layer 83 can be formed by, for example, an evaporation method, a plating method, or the like.
- the first Au layer 91, the second Au layer 92, and the third Au layer 93 are layers provided to suppress the oxidation of Sn in the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73.
- the thicknesses of the first Au layer 91, the second Au layer 92, and the third Au layer 93 are preferably sufficiently thinner than the thicknesses of the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73.
- the thicknesses of the first Au layer 91, the second Au layer 92, and the third Au layer 93 are set such that the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 71 are melted when the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73 are melted.
- Au is thermally diffused into the 3AuSn layer 73, and the first conductor portion 21, the second conductor portion 22, and the first bonding metal layer 23 are bonded to the first electrode 31, the second electrode 32, and the second bonding metal layer 43. Need to be set to be done.
- the thicknesses of the first Au layer 91, the second Au layer 92, and the third Au layer 93 are preferably set in the range of about 0.05 ⁇ m to 0.15 ⁇ m, for example.
- the first Au layer 91, the second Au layer 92, and the third Au layer 93 can be formed by, for example, a vapor deposition method or a plating method.
- a laminated film of the first barrier layer 81, the first AuSn layer 71, and the first Au layer 91 is referred to as a first bonding layer 101, and a laminated film of the second barrier layer 82, the second AuSn layer 72, and the second Au layer 92.
- the film is referred to as a second bonding layer 102.
- a laminated film of the third barrier layer 83, the third AuSn layer 73, and the third Au layer 93 is referred to as a third bonding layer 103.
- the first bonding layer 101 only needs to include at least the first AuSn layer 71 and is not limited to a laminated film but may be a single layer film.
- the second bonding layer 102 only needs to include at least the second AuSn layer 72 and is not limited to a laminated film but may be a single layer film.
- the third bonding layer 103 only needs to include at least the third AuSn layer 73, and is not limited to a laminated film but may be a single layer film.
- the ultraviolet light emitting element 3 is mounted on the mounting substrate 2a by performing the first step and the second step (FIG. 7D), and then the cap 6a is mounted by sequentially performing the third step and the fourth step. Bonded to the substrate 2a (FIG. 7E). Thereby, in the manufacturing method of the light-emitting device 1a, the light-emitting device 1a can be obtained.
- a bonding apparatus is used. More specifically, in the fourth step, the first step, the second step, the third step, and the fourth step are continuously performed by one bonding apparatus. If the cap 6a is regarded as a die having a size different from that of the ultraviolet light emitting element 3, the bonding apparatus can be regarded as a die bonding apparatus or a flip chip bonding apparatus.
- the bonding apparatus includes, for example, a first suction holder, a second suction holder, a stage, a first heater, a second heater, and a joining chamber.
- the first suction holder is a first collet that holds the ultraviolet light emitting element 3 by suction.
- the second suction holder is a second collet that holds the cap 6a by suction.
- the mounting substrate 2a is placed on the stage.
- the first heater is provided on the stage and configured to heat the mounting substrate 2a.
- the second heater is mounted on a holder that selectively holds the first suction holder and the second suction holder and is configured to heat the die.
- the bonding apparatus may have a configuration in which each of the first collet and the second collet includes a second heater instead of the holder including the second heater.
- the die is the ultraviolet light emitting element 3 sucked and held by the first suction holder or the cap 6a sucked and held by the second suction holder.
- the bonding chamber is a processing chamber in which a stage is accommodated and in which the ultraviolet light emitting element 3 and the cap 6a are bonded to the mounting substrate 2a on the stage.
- the atmosphere in the bonding chamber may be appropriately adjusted according to a predetermined atmosphere in the package 7a.
- the atmosphere in the bonding chamber is an N 2 gas atmosphere.
- the bonding apparatus opens the entrance / exit in the bonding chamber, and the mounting substrate 2a, the first adsorption holder, the second adsorption holder, etc. are supplied in a state in which N 2 gas is supplied from the outside of the bonding chamber through the entrance / exit. I put it in and out from the doorway.
- the bonding apparatus can be reduced in cost compared to the case where the bonding apparatus is configured to perform the bonding process in the vacuum chamber.
- the ultraviolet light emitting element 3 and the mounting substrate 2a are opposed to each other.
- the ultraviolet light emitting element 3 and the mounting substrate 2a are opposed to each other means that the first electrode 31 and the second electrode 32 of the ultraviolet light emitting element 3 and the first conductor portion 21 and the second conductor portion 22 of the mounting substrate 2a are respectively This means that the ultraviolet light emitting element 3 and the mounting substrate 2a are opposed to each other.
- the first electrode 31 and the second electrode 32 of the ultraviolet light emitting element 3 adsorbed and held by the first adsorbing holder are opposed to the first conductor portion 21 and the second conductor portion 22 of the mounting substrate 2a. More specifically, in the first step, the first AuSn layer 71 on the surface 211 of the first conductor part 21 is opposed to the first electrode 31, and the second electrode 32 and the surface 212 of the second conductor part 22 are on the surface 212. The second AuSn layer 72 is opposed to the second AuSn layer 72.
- the first electrode 31 and the second electrode 32 of the ultraviolet light emitting element 3 and the first conductor portion 21 and the second conductor portion 22 of the mounting substrate 2a are respectively connected by the first AuSn layer 71 and the second AuSn layer 72.
- the first junction 61 is not limited to being formed of AuSn alone, and may include the first barrier layer 81 in addition to the portion formed of AuSn.
- the 2nd junction part 62 is not restricted to being formed only with AuSn, In addition to the part formed with AuSn, the 2nd barrier layer 82 may be included.
- the first electrode 31 and the second electrode 32 of the ultraviolet light emitting element 3 and the first bonding layer 101 and the second bonding layer 102 on the mounting substrate 2a are stacked so as to be in contact with each other.
- the first AuSn layer 71 and the second AuSn layer 72 are melted while performing appropriate heating and pressurization.
- Au diffuses from the first Au layer 91 into the melted AuSn, and the composition ratio of Au in the melted AuSn increases.
- the second AuSn layer 72 is melted, Au diffuses from the second Au layer 92 into the melted AuSn, and the composition ratio of Au in the melted AuSn increases.
- the first AuSn layer 71 and the second AuSn layer 72 are melted, and then the AuSn that has been melted is pressed by applying pressure from the ultraviolet light emitting element 3 side so that the protruding structure portion 36 is in contact with the second conductor portion 22.
- the molten AuSn is filled in the space 9 by being pushed down and spread in the lateral direction, and then the molten AuSn is cooled and solidified.
- the mounting substrate 2a may be heated by the first heater, or the ultraviolet light emitting element 3 may be heated by the second heater.
- pressurization is performed by applying an appropriate load.
- the load is preferably set in a range of about 0.1 to 1 kg / cm 2 for one ultraviolet light emitting element 3.
- the time for applying the load is preferably set in the range of about 0.1 to 1 second, for example.
- the second step is preferably performed in an N 2 gas atmosphere.
- the melting temperature of the first AuSn layer 71 and the second AuSn layer 72 is preferably lower than the heat resistance temperature of the ultraviolet light emitting element 3.
- the first AuSn layer 71 and the second AuSn layer 72 are, for example, compositions having a smaller Au composition ratio than eutectic composition (70 at% Au, 30 at% Sn) and melting at a temperature of 300 ° C. or higher and lower than 400 ° C. (for example, 60 at%). Au, 40 at% Sn) is preferred.
- the volume of the second bonding layer 102 formed in the third step is preferably set to be equal to the volume of the space 9 so that AuSn forming the second bonding portion 62 does not come out of the space 9. .
- the melted AuSn so that the protruding structure portion 36 of the ultraviolet light emitting element 3 is in contact with the surface 212 of the second conductor portion 22 in a state where each of the first AuSn layer 71 and the second AuSn layer 72 is melted. Is pressed down to join the ultraviolet light emitting element 3 and the mounting substrate 2a. Therefore, in the second step of the fourth step, it is possible to suppress the first electrode 31 and the first conductor portion 21 from being unjoined.
- the projecting structure portion 36 is in contact with the second conductor portion 22, the first electrode 31 and the first conductor portion 21 are joined by the first joining portion 61 formed of AuSn, The two electrodes 32 and the second conductor portion 22 are joined by a second joint portion 62 formed of AuSn.
- the second joint portion 62 is formed so as to fill the space 9 surrounded by the second electrode 32, the protruding structure portion 36, and the second conductor portion 22. It becomes possible to do.
- the protrusion structure portion 36 flows the molten AuSn along the surface of the ultraviolet light emitting element 3. Suppress.
- the light emitting device 1a that can reduce the thermal resistance between the ultraviolet light emitting element 3 and the mounting substrate 2a and can reduce the variation in the thermal resistance is manufactured. It becomes possible to do.
- the second step of the fourth step it is preferable to apply a load so that the entire front end surface of the protruding structure portion 36 is in contact with the surface 212 of the second conductor portion 22.
- the second step of the fourth step due to the difference between the flatness of the tip surface of the protrusion structure 36 and the flatness of the surface 212 of the second conductor portion 22, It may be difficult to bring the entire surface into contact with the surface 212 of the second conductor portion 22. In this case, a part of the tip surface of the protrusion structure portion 36 is in contact with the surface 212 of the second conductor portion 22, and the gap between the remaining portion of the tip surface of the protrusion structure portion 36 and the surface 212 of the second conductor portion 22.
- the light emitting device 1a may be configured such that the protruding structure portion 36 partially contacts the surface 212 of the second conductor portion 22 as long as the parallelism of the ultraviolet light emitting element 3 with respect to the mounting substrate 2a is in a desired range.
- the second step of the fourth step if the applied load is increased, the difference between the flatness of the tip surface of the protrusion structure 36 and the flatness of the surface 212 of the second conductor portion 22 can be reduced. It is possible to increase the contact area between the structure portion 36 and the second conductor portion 22.
- the protruding structure portion 36 when the protruding structure portion 36 is formed of, for example, metal, the protruding structure portion 36 can be deformed to be compressed by increasing the applied load. It is possible to increase the contact area between the protruding structure portion 36 and the second conductor portion 22.
- the first Au layer 91 and the second Au layer 92 on the first AuSn layer 71 and the second AuSn layer 72, respectively, in the third step described above.
- Bondability can be improved.
- the bondability can be evaluated by, for example, die shear strength (die shear strength).
- the die shear strength is a force necessary to peel off the ultraviolet light emitting element 3 bonded to the mounting substrate 2a in parallel to the bonding surface.
- the die shear strength can be measured by, for example, a die shear tester.
- the second bonding metal layer 43 in the cap 6a sucked and held by the second suction holder is opposed to the first bonding metal layer 23 of the mounting substrate 2a. More specifically, in the third step, the second bonding metal layer 43 and the third AuSn layer 73 on the surface 231 of the first bonding metal layer 23 are opposed to each other.
- the second bonding metal layer 43 in the cap 6 a and the first bonding metal layer 23 of the mounting substrate 2 a are bonded by the third AuSn layer 73.
- the third bonding portion 63 is not limited to being formed of AuSn alone, and may include a third barrier layer 83 in addition to the portion formed of AuSn.
- the second bonding metal layer 43 in the cap 6a and the third bonding layer 103 on the mounting substrate 2a are overlapped so as to be in contact with each other while performing appropriate heating and pressurization.
- the third AuSn layer 73 is melted.
- Au diffuses from the third Au layer 93 into the melted AuSn, and the composition ratio of Au in the melted AuSn increases.
- the third AuSn layer 73 is melted and then pressurized from the cap 6a side, so that the melted AuSn is pushed down and spread in the lateral direction, and then cooled and solidified.
- the mounting substrate 2a may be heated by the first heater, or the cap 6a may be heated by the second heater.
- pressure is applied by applying an appropriate load.
- the load is preferably set in the range of about 0.1 to 1 kg / cm 2 for one cap 6a.
- the time for applying the load is preferably set in the range of about 0.1 to 1 second, for example.
- the fourth step is preferably performed in an N 2 gas atmosphere.
- the third bonding layer 103 on the mounting substrate 2a in the third step.
- the cap 6a is formed by joining the spacer 4 and the cover 5, and then the first electrode 31, the second electrode 32, and the cap of the ultraviolet light emitting element 3 are formed.
- the second bonding metal layer 43 in 6a and the first conductor portion 21, the second conductor portion 22, and the first bonding metal layer 23 of the mounting substrate 2a are respectively connected to the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73. To join. Therefore, in the method for manufacturing the light emitting device 1a of the present embodiment, the reliability can be improved and the cost can be reduced.
- the manufacturing method of the light emitting device 1a is a manufacturing method of the light emitting device 1a having the following configuration.
- the light emitting device 1a includes a mounting substrate 2a, an ultraviolet light emitting element 3 mounted on the mounting substrate 2a, and a cap 6a formed on the mounting substrate 2a and having a recess 663 for accommodating the ultraviolet light emitting element 3.
- the mounting substrate 2a includes a support body 20a, and a first conductor portion 21, a second conductor portion 22, and a first bonding metal layer 23 supported by the support body 20a.
- the 1st conductor part 21 and the 2nd conductor part 22 are arrange
- the cap 6 a has a front surface 661 and a back surface 662, and a cap body 660 having a recess 663 formed on the back surface 662, and a peripheral portion of the recess 663 on the back surface 662 of the cap body 660, facing the first bonding metal layer 23. And a second bonding metal layer 43 disposed.
- at least an ultraviolet light transmitting portion 666 between the surface 661 of the cap body 660 and the inner bottom surface 664 of the concave portion 663 is formed of glass that transmits ultraviolet light emitted from the ultraviolet light emitting element 3.
- the ultraviolet light emitting element 3 includes a first electrode 31 and a second electrode 32, and the first electrode 31 and the second electrode 32 are disposed on one surface side in the thickness direction of the ultraviolet light emitting element 3.
- the cap 6a is formed, and then the first electrode 31, the second electrode 32 of the ultraviolet light emitting element 3 and the second bonding metal layer 43 in the cap 6a and the first conductor portion of the mounting substrate 2a. 21, the second conductor portion 22, and the first bonding metal layer 23 are bonded by the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73, respectively.
- the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73 are collectively formed on the mounting substrate 2a in the same process. Therefore, in the method for manufacturing the light emitting device 1a, the reliability can be improved and the cost can be reduced.
- the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73 can be collectively formed on the mounting substrate 2a in the same process, so that the cost can be reduced. It becomes.
- the first AuSn layer 71 and the second AuSn layer 72 are formed by connecting the first electrode 31 and the second electrode 32 of the ultraviolet light emitting element 3 and the first conductor portion 21 and the second conductor portion 22 of the mounting substrate 2a, respectively.
- a first joining process for joining is performed.
- the second bonding process in which the second bonding metal layer 43 of the cap 6a and the first bonding metal layer 23 of the mounting substrate 2a are bonded by the third AuSn layer 73. I do.
- the first bonding process and the second bonding process are continuously performed in a bonding chamber of one bonding apparatus. Therefore, in the manufacturing method of the light-emitting device 1a, it becomes possible to achieve cost reduction.
- the light emitting device 1a preferably includes a Zener diode connected to the ultraviolet light emitting element 3 in antiparallel.
- the light-emitting device 1a can improve electrostatic resistance.
- the light emitting device 1a can suppress the dielectric breakdown of the ultraviolet light emitting element 3 due to static electricity.
- the Zener diode is preferably mounted on the mounting substrate 2a in the package 7a, for example.
- the chip size of the Zener diode is preferably smaller than the chip size of the ultraviolet light emitting element 3.
- the zener diode is preferably flip-chip mounted on the mounting substrate 2a by AuSn, like the ultraviolet light emitting element 3.
- a mounting substrate 2a having a third conductor portion and a fourth conductor portion for mounting a Zener diode is prepared, and in the third step, the third conductor portion and A fourth bonding layer including a fourth AuSn layer and a fifth bonding layer including a fifth AuSn layer are formed on the surface of each of the fourth conductor portions.
- the Zener diode may be flip-chip mounted on the mounting substrate 2a using the above-described bonding apparatus.
- FIG. 10 is a schematic plan view of the light emitting device 1b of the first modification.
- the light emitting device 1b of the first modified example is different in that a mounting substrate 2b on which a plurality of ultraviolet light emitting elements 3 are mounted is provided instead of the mounting substrate 2a.
- symbol same as the light-emitting device 1a is attached
- subjected and description is abbreviate
- a plurality of ultraviolet light emitting elements 3 are mounted on a mounting substrate 2b.
- the plurality of ultraviolet light emitting elements 3 are preferably arranged at equal intervals on one virtual circle.
- the light emitting device 1b preferably includes a Zener diode ZD for improving electrostatic resistance.
- the Zener diode ZD is preferably arranged at the center of the above-mentioned virtual circle.
- the light emitting device 1b includes a package 7b including a mounting substrate 2b and a cap 6a instead of the package 7a of the light emitting device 1a.
- the light emitting device 1b includes a plurality of ultraviolet light emitting elements 3 connected in parallel.
- the present invention is not limited thereto, and for example, the light emitting device 1b may have a configuration in which a plurality of ultraviolet light emitting elements 3 are connected in series. You may have the structure made.
- Document 1 describes that the spacer is made of a silicon substrate or an insulating resin. Reference 1 describes that it is preferable to form a reflective metal film made of Ag or Al on the side surface of the cavity in order to obtain a sufficient light reflection effect from the side surface of the cavity.
- an optoelectronic element including a carrier, an optoelectronic semiconductor chip that is a light emitting diode mounted on the main surface of the carrier, and an optical component mounted on the carrier has been proposed.
- the carrier is a printed circuit board or ceramic.
- the optical component has a frame and a glass plate.
- the frame is made of silicon.
- the glass plate transmits radiation emitted from the optoelectronic semiconductor chip.
- the above-described light emitting device 1a has the following configuration, if viewed from a different perspective.
- the light emitting device 1a includes a mounting substrate 2a, an ultraviolet light emitting element 3 mounted on the mounting substrate 2a, a spacer 4 formed on the mounting substrate 2a and having a through hole 41 that exposes the ultraviolet light emitting element 3, and a spacer 4 And a cover 5 disposed on the spacer 4 so as to close the through-hole 41.
- the ultraviolet light emitting element 3 is configured to emit ultraviolet light having an emission peak wavelength in the ultraviolet wavelength region.
- the spacer 4 includes a spacer body 40 made of Si.
- the through hole 41 is formed in the spacer body 40.
- the opening area of the through hole 41 gradually increases as the distance from the mounting substrate 2a increases.
- the cover 5 is made of glass that transmits ultraviolet rays emitted from the ultraviolet light emitting element 3. In the light emitting device 1a, the spacer 4 and the cover 5 are joined. In the light emitting device 1a having such a configuration, it is possible to increase the output of ultraviolet rays.
- the ultraviolet light emitting element 3 only needs to have an emission peak wavelength in the ultraviolet wavelength region, and is not limited to the UV-C wavelength region, and has an emission peak wavelength in the UV-B wavelength region or the UV-A wavelength region. You may do it.
- the “UV-B wavelength range” is, for example, 280 nm to 315 nm according to the classification by the wavelength of ultraviolet rays in the International Commission on Illumination.
- the “wavelength range of UV-A” is, for example, 315 nm to 400 nm according to the classification by the wavelength of ultraviolet rays in the International Commission on Illumination.
- the inventors of the present application conducted an experiment for measuring the reflectance of each of an evaluation sample using an Si substrate and an Al substrate.
- the evaluation sample is a sample in which a natural oxide film having a thickness of about 1 nm is formed on the surface of a Si substrate having the same specifications as the single crystal Si substrate 400.
- the reflectance is a value measured using a spectrophotometer. More specifically, the reflectance of the evaluation sample is determined by measuring the reflected light from the evaluation sample when ultraviolet light is incident on the surface of the evaluation sample (the surface of the natural oxide film) at a predetermined incident angle using a spectrophotometer. Spectroscopically measured.
- the reflectance of the Al substrate was measured by spectrophotometer spectrophotometrically measuring the reflected light from the Al substrate when ultraviolet rays were incident on the surface of the Al substrate at a predetermined incident angle.
- 11A, 11B, 11C, 11D, 11E, and 11F show the reflection characteristics of the evaluation samples when the incident angles are 5 °, 15 °, 25 °, 35 °, 45 °, and 55 °, respectively.
- 12A, 12B, 12C, 12D, and 12E show the reflection characteristics of the Al substrate when the incident angles are 15 °, 25 °, 35 °, 45 °, and 55 °, respectively.
- the evaluation sample had a reflectance of 50% or more with respect to ultraviolet rays having a wavelength of 220 nm to 390 nm and about 50% with respect to ultraviolet rays having a wavelength of 400 nm, regardless of the incident angle.
- the reflectance with respect to ultraviolet rays in the UV-C wavelength region tends to be small. This is because the reflectivity of aluminum oxide is greatly reduced in the UV-C wavelength region, so the aluminum oxide film formed on the Al substrate affects the overall reflectivity decrease (the Al substrate on which the aluminum oxide film is formed). Because it is.
- the progress of the surface oxidation of the Al substrate causes a decrease in reflectance with respect to ultraviolet rays in the UV-C wavelength region.
- the oxidative corrosion of the Al substrate progresses faster than the oxidation of the surface of the Si substrate. Therefore, care must be taken when using the Al substrate and the Al film in applications that reflect ultraviolet rays in the UV-C wavelength region.
- the spacer 4 includes the spacer main body 40 formed of Si, and the opening area of the through hole 41 formed in the spacer main body 40 gradually increases as the distance from the mounting substrate 2a increases.
- the inner side surface of the through hole 41 in the spacer body 40 has a function of a reflecting surface that reflects ultraviolet rays, so that the light extraction efficiency can be improved and the output of the ultraviolet rays can be increased. It becomes.
- the light emitting device 1a has the same basic configuration as the light emitting device 1a, and suppresses variations in output and changes in reflection characteristics over time, as compared with a comparative example in which an Al film is added as a reflective film to the inner surface of the through hole 41. It becomes possible. Therefore, in the light emitting device 1a, it is possible to increase the output of ultraviolet rays while reducing the cost, and it is possible to improve the reliability.
- the light-emitting device 1c of this embodiment is demonstrated based on FIG.
- the light emitting device 1c is different from the light emitting device 1a of the first embodiment in that the spacer 4 and the cover 5 are bonded using an inorganic bonding material.
- symbol same as the light-emitting device 1a is attached
- subjected and description is abbreviate
- the spacer 4 and the cover 5 are joined by the fourth joining portion 64 formed of low melting glass having a thermal expansion coefficient between the thermal expansion coefficient of the spacer body 40 and the thermal expansion coefficient of the cover 5.
- the light emitting device 1c can employ not only glass containing an alkali component but also quartz glass or the like as the cover 5.
- the low melting point glass is a glass having a softening point of 600 ° C. or lower, preferably a glass having a softening point of 500 ° C. or lower, and more preferably a glass having a softening point of 400 ° C. or lower.
- the low melting point glass include glass containing lead oxide (PbO) and boric anhydride (B 2 O 3 ) as main components.
- the light emitting device 1c includes a cap 6c constituted by the spacer 4, the fourth joint 64, and the cover 5 instead of the cap 6a of the light emitting device 1a.
- the cap 6c is made of an inorganic material.
- the cap 6 c has a front surface 661 and a back surface 662, and a cap body 660 having a recess 663 formed on the back surface 662, and a peripheral portion of the recess 663 on the back surface 662 of the cap body 660, facing the first bonding metal layer 23. And a second bonding metal layer 43 disposed.
- the light emitting device 1c includes a package 7c including a cap 6c and a mounting substrate 2a instead of the package 7a of the light emitting device 1a.
- the manufacturing method of the light emitting device 1c of this embodiment is substantially the same as the manufacturing method of the light emitting device 1a, and the bonding method of the spacer 4 and the cover 5 in the second step is different. That is, in the method for manufacturing the light emitting device 1b, the cap 6c is formed by joining the spacer 4 and the cover 5 in the second step. More specifically, in the method for manufacturing the light emitting device 1c, the spacer 4 and the cover 5 are bonded with low melting point glass in the second step. In the second step, low melting point glass pellets or low melting point glass paste may be used.
- the cap 6c is formed by joining the spacer 4 and the cover 5, and then the first electrode 31, the second electrode 32, and the cap 6c of the ultraviolet light emitting element 3 are formed.
- the second bonding metal layer 43 and the first conductor portion 21, the second conductor portion 22, and the first bonding metal layer 23 of the mounting substrate 2a are bonded by the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73, respectively. . Therefore, in the method for manufacturing the light emitting device 1b according to the present embodiment, the reliability can be improved and the cost can be reduced.
- the light emitting device 1d of the present embodiment will be described with reference to FIGS.
- the light emitting device 1d is different from the light emitting device 1a in that a mounting substrate 2d is provided instead of the mounting substrate 2a of the light emitting device 1a of the first embodiment.
- the same components as those of the light emitting device 1a are denoted by the same reference numerals as those of the light emitting device 1a, and description thereof is omitted.
- the light emitting device 1d includes a package 7d including a cap 6a and a mounting substrate 2d instead of the package 7a of the light emitting device 1a.
- the mounting board 2d is a multilayer board.
- the mounting substrate 2 d includes a first external connection electrode 24 and a second external connection electrode 25, a first wiring layer 28, a second wiring layer 29, and an electrical insulating layer 253.
- the first wiring layer 28 and the second wiring layer 29 are disposed on the surface 201 side of the support 20d.
- the first conductor portion 21 and the first external connection electrode 24 are disposed on the first wiring layer 28 and are electrically connected to the first wiring layer 28.
- the second conductor portion 22 and the second external connection electrode 25 are disposed on the second wiring layer 29 and are electrically connected to the second wiring layer 29.
- the electrical insulating layer 253 is disposed so as to cover the first wiring layer 28 and the second wiring layer 29 on the surface 201 side of the support 20d.
- the first bonding metal layer 23 is disposed on the electrical insulating layer 253. Therefore, for example, the light emitting device 1d can be mounted on the wiring board 600 using the first external connection electrode 24 and the second external connection electrode 25 on the front surface side of the mounting board 2d as shown in FIG. .
- the mounting substrate 2d includes a second electrical insulation layer 251 different from the first electrical insulation layer made of the electrical insulation layer 253.
- the support 20d is made of Si.
- the second electrical insulating layer 251 is disposed on the surface 201 of the support 20d.
- the first wiring layer 28 and the second wiring layer 29 are disposed on the second electrical insulating layer 251. Therefore, the light emitting device 1d can improve heat dissipation.
- the mounting substrate 2d has a first underlayer 254 interposed between the first bonding metal layer 23 and the electrical insulating layer 253.
- the mounting substrate 2d has a fourth electrical insulating layer 252 formed on the back surface 202 of the support 20d.
- the conductor layer 256 is laminated on the fourth electrical insulating layer 252 with the second base layer 255 interposed therebetween.
- Each of the first electrical insulation layer, the second electrical insulation layer 251, the third electrical insulation layer, and the fourth electrical insulation layer 252 can be composed of, for example, a silicon oxide film.
- Each of the first underlayer 254 and the second underlayer 255 can be composed of, for example, an Al film.
- the first underlayer 254 and the second underlayer 255 are made of the same material, but may be made of different materials.
- the conductor layer 256 can be constituted by a laminated film of a Ni film, a Pd film, and an Au film, for example.
- the wiring board 600 is a mother board.
- the wiring board 600 can be formed by a metal base printed wiring board, for example.
- the wiring substrate 600 includes, for example, a metal plate 601, an insulating resin layer 602 formed on the metal plate 601, and first and second wiring portions 604 and 605 formed on the insulating resin layer 602. Are preferably provided.
- the metal plate 601 is made of a Cu plate, but is not limited thereto, and may be made of an Al plate, for example.
- the wiring board 600 exposes the projection area of the light emitting device 1 d on the surface 611 of the metal plate 601.
- the conductor layer 256 on the back surface side of the light emitting device 1d is bonded to the metal plate 601 by the bonding layer 310.
- the bonding layer 310 is formed of solder, but is not limited thereto, and may be formed of sintered silver.
- Sintered silver is a sintered body in which silver particles are bonded together by sintering.
- Sintered silver is porous silver.
- the first external connection electrode 24 is electrically connected to the first wiring part 604 through the first wire 294.
- the second external connection electrode 25 is electrically connected to the second wiring portion 605 through the second wire 295.
- Each of the first wire 294 and the second wire 295 is preferably an Au wire.
- the light emitting device 1 d is secondarily mounted on the wiring board 600.
- the wiring board 600 is preferably larger than the light emitting device 1a in plan view. Thereby, the ultraviolet LED module can further improve heat dissipation.
- the manufacturing method of the light emitting device 1d of the present embodiment is basically the same as the manufacturing method of the light emitting device 1a.
- the cap 6a is formed by joining the spacer 4 and the cover 5, and then the first electrode 31, the second electrode 32, and the cap 6a of the ultraviolet light emitting element 3 are formed.
- the second bonding metal layer 43 and the first conductor portion 21, the second conductor portion 22, and the first bonding metal layer 23 of the mounting substrate 2a are bonded by the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73, respectively. . Therefore, in the method for manufacturing the light emitting device 1d according to the present embodiment, it is possible to improve the reliability and reduce the cost.
- the light emitting device 1d may include the cap 6c in the light emitting device 1c of the second embodiment instead of the cap 6a.
- the light-emitting device 1e of this embodiment is demonstrated based on FIG.
- the light emitting device 1e is different from the light emitting device 1a of the first embodiment in that a cap 6e is provided instead of the cap 6a of the light emitting device 1a of the first embodiment.
- symbol same as the light-emitting device 1a is attached
- subjected and description is abbreviate
- the light emitting device 1e includes a package 7e including a cap 6e and a mounting substrate 2a instead of the package 7a of the light emitting device 1a.
- the entire cap body 660 is formed of glass that transmits ultraviolet rays emitted from the ultraviolet light emitting element 3.
- the second bonding metal layer 43 is formed on the flat glass plate that is the base of the cap body 660.
- a hole corresponding to the recess 663 is then formed in the glass plate by drilling.
- the above-described method for forming the cap 6e is adopted at the time of manufacture.
- the opening area of the recess 663 on the back surface 662 of the cap body 660 can be made substantially the same as the area of the inner bottom surface 664 of the recess 663.
- the depth of the recess 663 is, for example, 300 ⁇ m.
- the second bonding metal layer 43 is preferably composed of a laminated film of a base film 431 and an Au film 432, for example.
- the base film 431 can be configured by a laminated film of a Cr film formed on the back surface 662 of the cap body 660 and a Pt film formed on the Cr film.
- the base film 431 in the second bonding metal layer 43 includes a Cr film, whereby the adhesion between the cap body 660 made of glass and the second bonding metal layer 43 can be improved. It becomes.
- the second bonding metal layer 43 can be formed using, for example, a film formation technique such as an evaporation method, a sputtering method, or a plating method, a photolithography technique, and an etching technique.
- the manufacturing method of the light emitting device 1e of the present embodiment is substantially the same as the manufacturing method of the light emitting device 1a of the first embodiment. That is, in the method for manufacturing the light emitting device 1e, the cap 6e is formed, and then the first electrode 31, the second electrode 32 of the ultraviolet light emitting element 3, and the second bonding metal layer 43 in the cap 6e and the first of the mounting substrate 2a.
- the conductor part 21, the second conductor part 22, and the first joining metal layer 23 are joined by the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73, respectively.
- the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73 are collectively formed on the mounting substrate 2a in the same process.
- “Batch formation in the same process” means that the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73 are simultaneously formed using the same process. Therefore, in the method for manufacturing the light emitting device 1e, the reliability can be improved and the cost can be reduced. In the manufacturing method of the light emitting device 1e, the first AuSn layer 71, the second AuSn layer 72, and the third AuSn layer 73 can be collectively formed on the mounting substrate 2a in the same process, so that the cost can be reduced. It becomes.
- the thicknesses of the Au films of the first electrode 31 and the second electrode 32 of the ultraviolet light emitting element 3 and the thickness of the Au film 432 in the second bonding metal layer 43 are set to a relatively close value or the same value. Is preferred. As a result, it is possible to further improve the mountability when the ultraviolet light emitting element 3 is mounted on the mounting substrate 2a and the cap 6e is mounted on the mounting substrate 2a.
- the thickness of each Au film of the first electrode 31 and the second electrode 32 of the ultraviolet light emitting element 3 is, for example, 1.3 ⁇ m.
- the thickness of the Au film 432 in the second bonding metal layer 43 is, for example, 1.0 ⁇ m.
- FIG. 21 is a schematic cross-sectional view showing a first modification of the cap 6e in the fourth embodiment.
- the cap 6e according to the first modification is different from the cap 6e according to the fourth embodiment in that the recess 663 in the cap body 660 is formed by blasting. Blasting is sand blasting.
- the inner bottom surface 664 of the recess 663 is a ground glass surface. In other words, a fine uneven structure is formed on the inner bottom surface 664 of the recess 663.
- the opening area of the recess 663 is gradually reduced in the depth direction of the recess 663.
- the second bonding metal layer 43 is formed on the flat glass plate that is the base of the cap body 660.
- the cap body 660 is then formed by forming the recess 663 on the glass plate by blasting.
- FIG. 22 is a schematic cross-sectional view showing a second modification of the cap 6e in the fourth embodiment.
- the cap 6e according to the second modification is different from the cap 6e according to the fourth embodiment in that the recess 663 in the cap body 660 is formed by wet etching.
- the wet etching is, for example, isotropic etching using a hydrofluoric acid solution. Therefore, the inner side surface 665 of the recessed part 663 is formed in the concave curved surface shape which has roundness.
- the cap body 660 is formed by forming the recess 663 by wet etching on the flat glass plate from which the cap body 660 is based.
- the second bonding metal layer 43 is then formed on the cap body 660.
- FIG. 23 is a schematic cross-sectional view showing a third modification of the cap 6e in the fourth embodiment.
- the cap body 660 is formed by press molding.
- the concave portion 663 is formed when the cap body 660 is press-molded. Therefore, in the cap 6e of the third modified example, in consideration of releasability, the opening area of the recess 663 on the back surface 662 of the cap body 660 is set larger than the area of the inner bottom surface 664 of the recess 663.
- the recess 663 in the cap 6e of the third modified example has a forward tapered shape in which the opening area gradually decreases in the depth direction.
- a quadrangular frustum shape is adopted as the forward tapered shape.
- the cap body 660 is formed by press molding.
- the second bonding metal layer 43 is then formed on the cap body 660.
- FIG. 24 is a schematic cross-sectional view showing a fourth modification of the cap 6e in the fourth embodiment.
- the cap 6e of the fourth modified example is formed by joining a cover 5 made of glass and a spacer 4 made of glass.
- the cap 6e of the fourth modified example it is possible to make the inner bottom surface 664 of the recess 663 a smooth surface as compared with the first modified example, the second modified example, and the third modified example.
- the entire cap 6e may be formed of glass that transmits ultraviolet rays emitted from the ultraviolet light emitting element 3, or only the cover 5 is ultraviolet rays emitted from the ultraviolet light emitting element 3. It may be formed of glass that transmits light.
- the light-emitting device 1f of this embodiment is demonstrated based on FIG.
- the light emitting device 1f is different from the light emitting device 1e in that a mounting substrate 2d is provided instead of the mounting substrate 2a of the light emitting device 1e of the fourth embodiment.
- the same components as those of the light emitting device 1e are denoted by the same reference numerals as those of the light emitting device 1e, and the description thereof is omitted.
- the light emitting device 1f includes a package 7f including a cap 6e and a mounting substrate 2d instead of the package 7e of the light emitting device 1e.
- the mounting board 2d is a multilayer board.
- the mounting substrate 2 d includes a first external connection electrode 24 and a second external connection electrode 25, a first wiring layer 28, a second wiring layer 29, and an electrical insulating layer 253.
- the first wiring layer 28 and the second wiring layer 29 are disposed on the surface 201 side of the support 20d.
- the first conductor portion 21 and the first external connection electrode 24 are disposed on the first wiring layer 28 and are electrically connected to the first wiring layer 28.
- the second conductor portion 22 and the second external connection electrode 25 are disposed on the second wiring layer 29 and are electrically connected to the second wiring layer 29.
- the electrical insulating layer 253 is disposed so as to cover the first wiring layer 28 and the second wiring layer 29 on the surface side of the support 20d.
- the first bonding metal layer 23 is disposed on the electrical insulating layer 253. Therefore, the light emitting device 1f can be mounted on the wiring board 600 (see FIG. 18) using the first external connection electrode 24 and the second external connection electrode 25 on the surface side of the mounting board 2d.
- the mounting substrate 2d includes a second electrical insulation layer 251 different from the first electrical insulation layer made of the electrical insulation layer 253.
- the support 20d is made of Si.
- the second electrical insulating layer 251 is disposed on the surface 201 of the support 20d.
- the first wiring layer 28 and the second wiring layer 29 are disposed on the second electrical insulating layer 251. Therefore, the light emitting device 1f can improve heat dissipation.
- the mounting substrate 2d has a first underlayer 254 interposed between the first bonding metal layer 23 and the electrical insulating layer 253.
- the mounting substrate 2d has a fourth electrical insulating layer 252 formed on the back surface 202 of the support 20d.
- the conductor layer 256 is laminated on the fourth electrical insulating layer 252 with the second base layer 255 interposed therebetween.
- Each of the first electrical insulation layer, the second electrical insulation layer 251, the third electrical insulation layer, and the fourth electrical insulation layer 252 can be composed of, for example, a silicon oxide film.
- Each of the first underlayer 254 and the second underlayer 255 can be composed of, for example, an Al film.
- the first underlayer 254 and the second underlayer 255 are made of the same material, but may be made of different materials.
- the conductor layer 256 can be constituted by a laminated film of a Ni film, a Pd film, and an Au film, for example.
- the ultraviolet light emitting element 3 when the ultraviolet light emitting element 3 is configured to emit ultraviolet light having an emission peak wavelength in the UV-C wavelength region, from the viewpoint of improving the transmittance of ultraviolet light, Schott Corporation. It is preferable to use 8337B manufactured by SCHOTT rather than 8347 manufactured by SCHOTT.
- the thermal expansion coefficient of 8337B manufactured by SCHOTT is larger than that of Si.
- the difference between the thermal expansion coefficient of 8337B manufactured by SCHOTT and the thermal expansion coefficient of Si is larger than the difference between the thermal expansion coefficient of 8347 manufactured by SCHOTT and the thermal expansion coefficient of Si.
- a wafer is formed by bonding, at a wafer level, a first wafer on which a plurality of spacers 4 are formed and a second wafer on which a plurality of covers 5 are based.
- a bonding process for forming a level bonded body is performed, and then a dicing process for dividing the wafer level bonded body into individual caps 6a by cutting with a dicing saw.
- the manufacturing method of the light emitting device 1a when 8337B manufactured by SCHOTT is used as the borosilicate glass forming the second wafer, compared with 8347 manufactured by SCHOTT as the borosilicate glass forming the second wafer, Manufacturing yield will be reduced. More specifically, in the method for manufacturing the light emitting device 1a, the spacer 4 and the cover 5 are separated in the dicing process even if the first wafer and the second wafer are apparently bonded in the wafer level bonded body. There was a thing. That is, in the manufacturing method of the light emitting device 1a, when 8337B manufactured by SCHOTT Co. is used as the borosilicate glass forming the second wafer, the bonding failure between the spacer 4 and the cover 5 may occur.
- the spacer 4 includes a silicon oxide film 46 formed on the side of the surface 45 facing the cover 5 in the spacer body 40 formed of Si. And the point from which the spacer 4 and the cover 5 are directly joined differs from the light-emitting device 1a.
- the spacer body 40 has a thickness of about 0.3 mm.
- the cover 5 has a thickness of about 0.3 mm.
- the film thickness of the silicon oxide film 46 is about 50 nm.
- the silicon oxide film 46 is a thermal oxide film.
- the glass forming the cover 5 contains an alkali component, and the spacer 4 and the cover 5 are directly joined.
- symbol same as the light-emitting device 1a is attached
- omitted is abbreviate
- the spacer 4 and the cover 5 constitute a cap 6g that covers the ultraviolet light emitting element 3.
- the mounting substrate 2a and the cap 6g constitute a package 7g for housing the ultraviolet light emitting element 3.
- the light emitting device 1g of the present embodiment includes a mounting substrate 2a, an ultraviolet light emitting element 3 mounted on the mounting substrate 2a, and a cap 6g formed on the mounting substrate 2a and having a recess 663 for accommodating the ultraviolet light emitting element 3. .
- the cap 6g is disposed on the mounting substrate 2a and is provided on the spacer 4 so as to close the through hole 41 of the spacer 4 and the spacer 4 in which the through hole 41 exposing the ultraviolet light emitting element 3 is exposed.
- a cover 5 that is joined.
- the cover 5 is made of borosilicate glass that transmits ultraviolet rays emitted from the ultraviolet light emitting element 3.
- the spacer 4 includes a spacer body 40 made of Si, and a silicon oxide film 46 formed on the side of the spacer body 40 facing the cover 5 facing the cover 5.
- the spacer 4 and the cover 5 are directly joined.
- the cover 5 can be formed of borosilicate glass having a higher transmittance with respect to the ultraviolet light emitted from the ultraviolet light emitting element 3, and the output of the ultraviolet light can be increased. It becomes.
- the second bonding metal layer 43 is preferably composed of a laminated film of a base film 431 and a bonding layer 433, for example.
- the base film 431 can be composed of, for example, an Al film.
- the bonding layer 433 can be configured by a laminated film of a Ni film and an Au film, for example.
- the manufacturing method of the light emitting device 1g is substantially the same as the manufacturing method of the light emitting device 1a described in the first embodiment.
- the spacer 4 is formed, the silicon oxide film 46 is formed on the surface 45 of the spacer 4 facing the cover 5. Thereafter, the only difference is that the spacer 4 and the cover 5 are joined by anodic bonding.
- a first wafer 4001 on which a plurality of spacers 4 are formed and a second wafer 5000 on which a plurality of covers 5 can be formed are overlapped.
- the electrode 4010 is disposed on the exposed surface of the silicon oxide film 46, and the electrode 5010 is disposed on the second wafer 5000. Thereafter, in a state where the first wafer 4001 and the second wafer 5000 are heated to a predetermined temperature (for example, 305 ° C.), the electrode 4010 is placed between the electrode 4010 and the electrode 5010 as the anode side and a predetermined voltage value (for example, from the DC power source E). , 600V) is applied for a predetermined time (for example, 30 minutes).
- a predetermined temperature for example, 305 ° C.
- a predetermined voltage value for example, from the DC power source E. , 600V
- a predetermined time for example, 30 minutes.
- the boundary between adjacent spacers 4 is schematically shown by a one-dot chain line.
- the boundary of adjacent covers 5 is typically shown by a one-dot chain line.
- the first wafer 4001 is a wafer in which a silicon oxide film 46, a silicon oxide film 44, a base film 431, and a through hole 41 are formed on a Si wafer 4000 that is a base of the single crystal Si substrate 400.
- the second wafer 5000 is made of borosilicate glass.
- the diameter of the second wafer 5000 is the same as the diameter of the Si wafer 4000.
- the width of the flat surface 5003 provided on a part of the side surface of the second wafer 5000 (width in the direction orthogonal to the paper surface of FIG. 28) is the flat surface provided on a part of the side surface of the Si wafer 4000 (orientation flat: orientation flat) larger than 4003 width. Therefore, in a state where the first wafer 4001 and the second wafer 5000 are overlapped, a part of the first wafer 4001 is exposed as viewed from the first wafer 5000 side.
- the manufacturing method of the light emitting device 1g is a manufacturing method of the light emitting device 1g having the following configuration.
- the light emitting device 1g includes a mounting substrate 2a, an ultraviolet light emitting element 3 mounted on the mounting substrate 2a, and a cap 6g formed on the mounting substrate 2a and having a recess 663 in which the ultraviolet light emitting element 3 is accommodated.
- the cap 6g is disposed on the mounting substrate 2a and is provided on the spacer 4 so as to close the through hole 41 of the spacer 4 and the spacer 4 in which the through hole 41 exposing the ultraviolet light emitting element 3 is exposed.
- a cover 5 that is joined.
- the cover 5 is made of borosilicate glass that transmits ultraviolet rays emitted from the ultraviolet light emitting element 3.
- the spacer 4 includes a spacer body 40 made of Si, and a silicon oxide film 46 formed on the side of the spacer body 40 facing the cover 5 facing the cover 5. The spacer 4 and the cover 5 are directly joined.
- a wafer level bonded body is formed by directly bonding a first wafer 4001 formed with a plurality of spacers 4 and a second wafer 5000 capable of forming a plurality of covers 5 by anodic bonding.
- the cap 6g is formed by dicing the level joined body, and the mounting substrate 2a on which the ultraviolet light emitting element 3 is mounted and the cap 6g are joined. Therefore, in the method for manufacturing the light emitting device 1g, the light emitting device 1g capable of increasing the output of ultraviolet light can be manufactured relatively easily. Further, in the method for manufacturing the light emitting device 1g, the manufacturing yield can be improved and the cost can be reduced.
- the bonding layer 433 is not formed on the base film 431 of the spacer 4 before the wafer level bonded body is formed.
- a zincate treatment (zincate treatment) is performed on the base film 431, followed by electroless plating.
- a bonding layer 433 composed of a laminated film of a Ni film and an Au film is formed on the base film 431.
- the inventors of the present application manufactured a wafer level bonded body by bonding the first wafer and the second wafer formed by 8337B manufactured by SCHOTT by anodic bonding.
- the interface between the first wafer and the second wafer was observed from the front surface side of the second wafer with an optical microscope, but no void of a problem size was observed, and apparently the first wafer and the second wafer Two wafers were bonded.
- the thickness of the Si wafer that is the basis of the first wafer is 0.3 mm.
- the thickness of the second wafer is 0.3 to 0.5 mm.
- the spacer 4 and the cover 5 were not separated even when the wafer level bonded body was diced with a dicing saw.
- FIG. 29 is a diagram summarizing SEM image diagrams and results of composition analysis by EDX.
- the depth direction distribution was examined for each of C, O, Na, Al, Si, K, and Ba.
- the “depth distribution” refers to each element (C, O, Na) in the cover 5 when the position away from the interface between the spacer body 40 and the silicon oxide film 46 by about 4.73 ⁇ m is used as the reference position.
- Al, Si, K, and Ba The depth direction is a direction from the reference position toward the spacer body 40.
- the inventors of the present application found that the movement of K occurred near the surface of the silicon oxide film 46, and a reaction layer having a thickness of about 350 nm was formed in a portion of the cover 5 on the silicon oxide film 46 side. Confirmed that it has been. The inventors of the present application speculate that the spacer 4 and the cover 5 are joined by the silicon oxide film 46 serving as an adhesion layer between the Si wafer 4000 and the second wafer 5000.
- the inventors of the present application made a plurality of wafer level bonded bodies with different thicknesses of the silicon oxide film 46, and conducted an experiment of observing the bonded state of each wafer level bonded body with an optical microscope, SEM or the like.
- the thickness of the silicon oxide film 46 was set to 0 nm, 25 nm, 40 nm, 50 nm, 80 nm, 100 nm, and 300 nm.
- the film thickness of the silicon oxide film 46 is a value measured by an ellipsometer.
- the inventors of the present application obtained an experimental result that the cover 5 and the spacer 4 are separated at the time of dicing in each wafer level bonded body in which the thickness of the silicon oxide film 46 is 0 nm, 25 nm, and 40 nm. Further, the inventors of the present application obtained an experimental result that the cover 5 and the spacer 4 are not separated at the time of dicing in each wafer level bonded body in which the film thickness of the silicon oxide film 46 is 50 nm, 80 nm, 100 nm, and 300 nm. Therefore, the bonding state of the wafer level bonded body was evaluated by observing the cross section of the wafer level bonded body with an SEM. The inventors of the present application show that the bonding state of the wafer level bonded body is good when no void is seen at the interface between the silicon oxide film 46 and the cover 5 and the reaction layer is seen as observed by SEM. It was judged.
- the inventors of the present application conducted a heat cycle test for examining the thermal shock resistance of a wafer level bonded body having a silicon oxide film 46 of 50 nm or more.
- the temperature in the low temperature period was ⁇ 40 ° C.
- the temperature in the high temperature period was 105 ° C.
- the number of heat cycle cycles was 100.
- the inventors of the present application have obtained knowledge that, if the thickness of the silicon oxide film 46 is 50 nm or more, the bonding state, dicing resistance and thermal shock resistance of the wafer level bonded body are good. It was.
- the silicon oxide film 46 is preferably a thermal oxide film. Thereby, in the light emitting device 1g, it is possible to improve the reliability as compared with the case where the silicon oxide film 46 is a silicon oxide film formed by a CVD method.
- the thickness of the silicon oxide film 46 is preferably 50 nm or more. Thereby, in the light emitting device 1g, it is possible to reduce the cost by improving the manufacturing yield. From the viewpoint of improving the manufacturing yield of the light emitting device 1g, the thickness of the silicon oxide film 46 is more preferably 80 ⁇ m or more. However, as the thickness of the silicon oxide film 46 increases, it is necessary to increase the voltage value of the DC voltage applied at the time of anodic bonding. Therefore, the thickness of the silicon oxide film 46 is preferably 1 ⁇ m or less, and more preferably 300 nm or less. .
- the cap 6g in the light emitting device 1g of the present embodiment may be used in place of the cap 6a of the other light emitting devices 1b, 1d.
- the light-emitting device 1h of a 1st example is demonstrated based on FIG.
- the first electrode 31 and the second electrode 32 of the ultraviolet light emitting element 3 and the first conductor portion 21 and the second conductor portion 22 of the mounting substrate 2a are respectively joined by an Au bump bump 161 and Au bump.
- the light emitting device 1a of the first embodiment is different from the light emitting device 1a according to the first embodiment in that the light emitting device 1a is joined by the joint 162.
- the light emitting device 1 h is different from the light emitting device 1 a in that the third barrier layer 83 is between the second bonding metal layer 43 of the spacer 4 and the third bonding portion 63.
- the same components as those of the light emitting device 1a are denoted by the same reference numerals as those of the light emitting device 1a, and description thereof is omitted.
- the Au bump is preferably constituted by a stud bump formed on the mounting substrate 2a by a stud bump method (also called a ball bump method).
- a stud bump method also called a ball bump method.
- the second bonding metal layer 43 is preferably composed of a laminated film of a base film 431 and a bonding layer 433, for example.
- the base film 431 can be composed of, for example, an Al film.
- the bonding layer 433 can be configured by a laminated film of a Ni film, a Pd film, and an Au film, for example.
- the spacer 4 and the cover 5 constitute a cap 6 h that covers the ultraviolet light emitting element 3.
- the mounting substrate 2a and the cap 6h constitute a package 7h for housing the ultraviolet light emitting element 3.
- Document 1 describes that the spacer is made of a silicon substrate or an insulating resin. Reference 1 describes that it is preferable to form a reflective metal film made of Ag or Al on the side surface of the cavity in order to obtain a sufficient light reflection effect from the side surface of the cavity.
- Reference 3 also discloses an optoelectronic element including a carrier, an optoelectronic semiconductor chip that is a light emitting diode mounted on the main surface of the carrier, and an optical component mounted on the carrier as a light emitting device.
- the carrier is a printed circuit board or ceramic.
- the optical component has a frame and a glass plate.
- the frame is made of silicon.
- the glass plate transmits radiation emitted from the optoelectronic semiconductor chip.
- the light emitting device 1h includes a mounting substrate 2a, an ultraviolet light emitting element 3 mounted on the mounting substrate 2a, and a spacer formed on the mounting substrate 2a and having a through hole 41 that exposes the ultraviolet light emitting element 3. 4 and a cover 5 disposed on the spacer 4 so as to close the through hole 41 of the spacer 4.
- the ultraviolet light emitting element 3 is configured to emit ultraviolet light having an emission peak wavelength in the ultraviolet wavelength region.
- the spacer 4 includes a spacer body 40 made of Si.
- the through hole 41 is formed in the spacer body 40.
- the opening area of the through hole 41 gradually increases as the distance from the mounting substrate 2a increases.
- the cover 5 is made of glass that transmits ultraviolet rays emitted from the ultraviolet light emitting element 3. In the light emitting device 1h, the spacer 4 and the cover 5 are joined. In the light emitting device 1h having such a configuration, it is possible to increase the output of ultraviolet rays.
- the following first step, second step, third step, and fourth step are sequentially performed.
- a base film 431 made of an Al film is formed on the silicon oxide film 44 of the spacer 4, and then the cap 5h is formed by directly bonding the cover 5 and the spacer 4 by anodic bonding.
- a zincate treatment is performed on the base film 431 of the cap 6e, and then the bonding layer 433 made of a laminated film of a Ni film, a Pd film, and an Au film is formed by an electroless plating method. It is formed on the base film 431.
- the third barrier layer 83 made of, for example, a Pt film is formed on the bonding layer 433, and then the third AuSn layer 73 is formed on the third barrier layer 83 by an electrolytic plating method.
- a third Au layer 93 is formed on the third AuSn layer 73 by electrolytic plating.
- the third barrier layer 83, the third AuSn layer 73, and the third Au layer 93 constitute a third bonding layer 103.
- the first and second steps described above are preferably performed at the wafer level. After the third Au layer 93 is formed in the second step, the first wafer and the plurality of covers 5 on which the plurality of spacers 4 are formed are formed. It is preferable that the structure bonded to the second wafer is divided into a plurality of caps 6h.
- the first electrode 31 and the second electrode 32 of the ultraviolet light emitting element 3 and the first conductor portion 21 and the second conductor portion 22 of the mounting substrate 2a are joined to the joint portion 161 and the Au bump, respectively, made of Au bumps. It joins by the junction part 162 which consists of.
- flip chip mounting is performed in which the ultraviolet light emitting element 3 is mounted on the mounting substrate 2a using ultrasonic waves.
- the cap 6h is joined to the mounting substrate 2a by sequentially performing the first step and the second step.
- the first step of the fourth step the second bonding metal layer 43 and the first bonding metal layer 23 of the mounting substrate 2d are opposed to each other in the cap 6h that is sucked and held by the second suction holder. More specifically, in the first step, the third bonding layer 103 laminated on the second bonding metal layer 43 and the first bonding metal layer 23 are opposed to each other.
- the second bonding metal layer 43 in the cap 6 h and the first bonding metal layer 23 of the mounting substrate 2 a are bonded by the third AuSn layer 73.
- the mounting substrate 2a is heated to a temperature equal to or higher than the melting point of the third AuSn layer 73 by the first heater, and the cap 6h is set to a temperature lower than the melting point of the third AuSn layer 73.
- the bonding layer 103 and the first bonding metal layer 23 of the mounting substrate 2a are overlaid so as to be in contact with each other.
- the third AuSn layer 73 is melted while applying pressure to the cap 6h, and then cooled and solidified to form the third joint 63.
- the second step is preferably performed in an N 2 gas atmosphere.
- the light emitting device 1h can be obtained by sequentially performing the first step, the second step, the third step, and the fourth step.
- the light emitting device 1 i of the second example will be described with reference to FIGS. 32 and 33.
- the first electrode 31 and the second electrode 32 of the ultraviolet light emitting element 3 and the first conductor portion 21 and the second conductor portion 22 of the mounting substrate 2d are respectively joined portions 161 and Au bumps made of Au bumps.
- the light emitting device 1d of the third embodiment it is joined by a joining portion 162 made of
- the light emitting device 1 i is different from the light emitting device 1 a in that the third barrier layer 83 is located between the second bonding metal layer 43 of the spacer 4 and the third bonding portion 63.
- the same components as those of the light emitting device 1d are denoted by the same reference numerals as those of the light emitting device 1d, and description thereof is omitted.
- the Au bump is preferably composed of a stud bump formed by a stud bump method.
- the planar size of the second electrode 32 is larger than the planar size of the first electrode 31, it is preferable to provide a plurality of joints 162 with respect to the second electrode 32. Thereby, in the light-emitting device 1i, it becomes possible to improve heat dissipation as compared with the case where the number of the joint portions 162 is one.
- the spacer 4 and the cover 5 constitute a cap 6 h that covers the ultraviolet light emitting element 3.
- the mounting substrate 2d and the cap 6h constitute a package 7i for housing the ultraviolet light emitting element 3.
- the manufacturing method of the light emitting device 1i is the same as the manufacturing method of the light emitting device 1h, the description thereof is omitted.
- the light-emitting device 1j of this embodiment is demonstrated based on FIG.
- the light emitting device 1j is different from the light emitting device 1a of the first embodiment in that the light emitting device 1j includes a sealing portion 80 that covers the ultraviolet light emitting element 3 in a space 8 surrounded by the mounting substrate 2a, the spacer 4, and the cover 5.
- symbol same as the light-emitting device 1a is attached
- the sealing material forming the sealing part 80 has electrical insulation.
- the sealing material forming the sealing portion 80 is resistant to ultraviolet rays emitted from the ultraviolet light emitting element 3 and transmits the ultraviolet rays emitted from the ultraviolet light emitting element 3. Resin. “Having ultraviolet resistance against ultraviolet rays emitted from the ultraviolet light emitting element 3” means, for example, that the ultraviolet light emitting element 3 is continuously energized for 2000 hours at a rated current, and the transmittance before and after the start of energization. It means that the rate of decrease is 30% or less.
- the refractive index of the sealing portion 80 is higher than the refractive index of the inert gas.
- sealing resin for example, a silicone resin whose main skeleton is made of Si—O bond and having an ultraviolet transmittance of 90% or more, or a main skeleton made of CF bond and having an ultraviolet transmittance of 90% or more. It is also possible to employ a fluorine-based resin (for example, amorphous fluororesin).
- a fluorine-based resin for example, amorphous fluororesin
- the refractive index of the cover 5 with respect to ultraviolet rays having a wavelength of 265 nm is about 1.5. Further, the refractive index of the substrate 30 with respect to the ultraviolet ray having a wavelength of 265 nm is about 1.8. On the other hand, the refractive index of the sealing portion 80 with respect to ultraviolet rays having a wavelength of 265 nm is, for example, about 1.3 to 1.5.
- the light emitting device 1j can improve the light extraction efficiency by including the sealing portion 80 that covers the ultraviolet light emitting element 3 in the space 8 surrounded by the mounting substrate 2a, the spacer 4, and the cover 5. Thus, it becomes possible to achieve high output.
- the manufacturing method of the light emitting device 1j of the present embodiment is substantially the same as the manufacturing method of the light emitting device 1a, and the sealing resin that becomes the source of the sealing portion 80 in the space surrounded by the cover 5 and the spacer 4 in the cap 6a. 800 is applied (FIG. 35A), and then the cap 6a is made to face the mounting substrate 2a (FIG. 35B). Subsequently, the cap 6a is bonded to the mounting substrate 2a, and then the sealing resin 800 is thermally cured. The difference is that the sealing portion 80 is formed.
- the process conditions for thermosetting the sealing resin 800 are, for example, a heating temperature of 150 ° C. and a heating time of 2 hours.
- Embodiments 1 to 7 are only preferable examples and are not intended to be limited thereto. Furthermore, the present invention can be appropriately modified in configuration without departing from the scope of its technical idea.
- the light emitting devices 1a, 1b, 1c, 1d, 1e, 1f, 1g, 1h, and 1j employ an ultraviolet LED chip as the ultraviolet light emitting element 3, the present invention is not limited thereto.
- an ultraviolet LD (laser diode) chip may be employed.
- the spacer body 40 is made of Si, but the spacer body 40 may be made of Al.
- the light emitting device (1a, 1b, 1c, 1d, 1e, 1f, 1g, 1j) according to the first aspect of the present invention has the mounting substrate (2a, 2b, 2d), the ultraviolet light emitting element (3) mounted on the mounting substrate (2a, 2b, 2d), and the ultraviolet light emitting element (3) disposed on the mounting substrate (2a, 2b, 2d).
- the caps (6a, 6c, 6e, 6g) are arranged so as to face the inner bottom surface (664) of the recess (663), and the caps (6a, 6c, 6e, 6g) have a front surface (661) and a back surface (662).
- a second bonding metal layer (43) disposed opposite to the first bonding metal layer (23), and at least the surface (661) of the cap body (660) and the recess (663).
- An ultraviolet light transmitting portion (666) between the inner bottom surface (664) is formed of glass that transmits ultraviolet light emitted from the ultraviolet light emitting element (3), and the ultraviolet light emitting element (3) includes a first electrode ( 31)
- the second electrode (32), and the first electrode (31) and the second electrode (32) are disposed on one surface side in the thickness direction of the ultraviolet light emitting element (3),
- the one conductor part (21), the second conductor part (22), and the first bonding metal layer (23) are composed of the same laminated film on the surface (201) side of the support (20a, 20d).
- the uppermost layer farthest from the support (20a, 20d) in each of the first conductor part (21), the second conductor part (22), and the first bonding metal layer (23) is made of Au.
- the first electrode (31) and the first conductor portion (21) are joined by a first joint portion (61) made of AuSn, and the second electrode (32) and the second conductor are joined.
- the portion (22) is formed by the second joint portion (62) formed of AuSn.
- the first bonding metal layer (23) and the second bonding metal layer (43) are bonded by a third bonding portion (63) formed of AuSn.
- the light emitting device (1a, 1b, 1c, 1d, 1e, 1f, 1g, 1j) includes the first conductor portion (21) and the second conductor portion in the first aspect. (22) and the first bonding metal layer (23) and the first bonding portion (61), the second bonding portion (62), and the third bonding portion (63), respectively.
- a barrier layer (81), a second barrier layer (82), and a third barrier layer (83) are formed, and the first barrier layer (81), the second barrier layer (82), and the third barrier layer are formed. (83) is made of the same material and the same thickness.
- the light emitting device (1a, 1b, 1c, 1d, 1e, 1f, 1g, 1j) according to the third aspect of the present invention is the first or second aspect, wherein the first electrode (31) has an outermost surface.
- a first pad electrode layer (31B) configured by the surface of the Au film is provided, and the second electrode (32) includes a second pad electrode layer (32B) whose outermost surface is configured by the surface of the Au film.
- the second bonding metal layer (43) includes a laminated film of a base film (431) and an Au film (432).
- the light emitting device (1a, 1b, 1c, 1d, 1e, 1f, 1g, 1j) according to the fourth aspect of the present invention is the third junction (63) according to any one of the first to third aspects. Is formed along the entire circumference of the outer peripheral edge of the back surface (662) of the cap body (660).
- the light emitting device (1a, 1b, 1c, 1d, 1e, 1f, 1g) is the fourth aspect, wherein the mounting substrate (2a, 2b, 2d) and the cap (6a, The space surrounded by 6c, 6e, 6g) is an inert gas atmosphere.
- the light emitting device (1a, 1b, 1c, 1d, 1e, 1f, 1g, 1j) according to the sixth aspect of the present invention is the cap (6a, 6c, 6e) according to any one of the first to fifth aspects. 6g) is smaller than the mounting substrates (2a, 2b, 2d) in plan view.
- the light emitting device (1a, 1b, 1c, 1e, 1g, 1j) according to the seventh aspect of the present invention is the light emitting device according to any one of the first to sixth aspects.
- the first external connection electrode (24) and the second external connection electrode (25) are formed on the back surface (202) of the support (20a), and the first external connection electrode (24)
- the second external connection electrode (25) is electrically connected to the first conductor portion (21) through the first through wiring (26), and the second external connection electrode (25) is connected to the first conductor portion (21) through the second through wiring (27).
- the second conductor part (22) is electrically connected.
- the support (20a) is made of AlN ceramic.
- the mounting substrate (2d) is a multilayer substrate, and the mounting substrate (2d) is A first external connection electrode (24) and a second external connection electrode (25), a first wiring layer (28), a second wiring layer (29), and an electrical insulating layer (253),
- the first wiring layer (28) and the second wiring layer (29) are disposed on the surface (201) side of the support (20d), and the first conductor portion (21) and the first external connection electrode (24) is disposed on the first wiring layer (28) and is electrically connected to the first wiring layer (28), and the second conductor portion (22) and the second external connection electrode (25).
- the electrical insulating layer (253) is disposed so as to cover the first wiring layer (28) and the second wiring layer (29) on the surface (201) side of the support (20d).
- One joining metal layer (23) is disposed on the electrical insulating layer (253).
- a light emitting device (1d, 1f) is the ninth aspect, wherein the mounting substrate (2d) includes a first electric insulating layer (253) made of the electric insulating layer (253). Includes another second electric insulating layer (251), the support (20d) is made of Si, and the second electric insulating layer (251) is formed on the surface (20d) of the support (20d). 201), and the first wiring layer (28) and the second wiring layer (29) are arranged on the second electrical insulating layer (251).
- the cap (6a, 6c, 6g) A spacer (4) disposed on the mounting substrate (2a, 2b, 2d) and having a through hole (41) exposing the ultraviolet light emitting element (3), and the through hole (41) of the spacer (4)
- a cover (5) disposed on the spacer (4) so as to close the cover and joined to the spacer (4), and exposed through the through-hole (41) in the cover (5)
- Constitutes the inner bottom surface (664) of the recess (663), and the cover (5) is made of glass that transmits ultraviolet rays emitted from the ultraviolet light emitting element (3), and the spacer (4) Is shaped by Si
- the spacer main body (40) and the facing surface (42) of the spacer main body (40) facing the mounting substrate (2a, 2b, 2d) are arranged to face the first bonding metal layer (
- a light emitting device (1a, 1b, 1c, 1d, 1g, 1j) is the eleventh aspect, wherein the through hole (41) is formed in the spacer body (40).
- the opening area of the through hole (41) gradually increases as the distance from the mounting substrate (2a, 2b, 2d) increases.
- a light emitting device (1a, 1b, 1c, 1d, 1g, 1j) according to a thirteenth aspect of the present invention is the twelfth aspect, wherein the spacer body (40) has a surface (401) having a (100) plane. It is formed from a single crystal Si substrate (400), and the inner side surface of the through hole (41) is a surface along the ⁇ 111 ⁇ plane.
- the light emitting device (1a, 1b, 1c, 1d, 1g, 1j) according to the fourteenth aspect of the present invention is the thirteenth aspect, wherein the spacer (4) has the inner surface of the through hole (41). It is constituted by the surface of a silicon oxide film formed along the ⁇ 111 ⁇ plane.
- the ultraviolet light emitting element (3) is UV-C.
- the ultraviolet ray having the emission peak wavelength in the wavelength region is emitted.
- the light emitting device (1a, 1b, 1d, 1g, 1j) is the glass according to any one of the eleventh to fifteenth aspects, wherein the glass forming the cover (5) contains an alkaline component.
- the spacer (4) and the cover (5) are directly joined.
- the light emitting device (1c) according to a seventeenth aspect of the present invention is the light emitting device (1c) according to any one of the eleventh to fifteenth aspects, wherein the spacer (4) and the cover (5) are the heat of the spacer body (40). It joins by the 4th junction part (64) formed with the low melting glass which has a thermal expansion coefficient between an expansion coefficient and the thermal expansion coefficient of the said cover (5).
- a light emitting device (1g) according to an eighteenth aspect of the present invention is the light emitting device (1g) according to the sixteenth aspect, wherein the spacer (4) is located on the surface (45) side facing the cover (5) in the spacer body (40).
- a silicon oxide film (46) is formed.
- the entire cap body (660) is radiated from the ultraviolet light emitting element (3). It is made of glass that transmits ultraviolet rays.
- the manufacturing method of the light emitting device (1a, 1b, 1c, 1d, 1e, 1f, 1g, 1j) includes a mounting board (2a, 2b, 2d) and the mounting board (2a, 2b and 2d), and a cap (663) formed on the mounting substrate (2a, 2b and 2d) and having a recess (663) for accommodating the ultraviolet light emitting element (3).
- 6a, 6c, 6e, 6g) and the mounting substrate (2a, 2b, 2d) is supported by the support (20a, 20d) and the support (20a, 20d).
- the caps (6a, 6c, 6 6g) and the cap (6a, 6c, 6e, 6g) has a front surface (661) and a back surface (662), and the back surface (662). 662) and the first metal layer for bonding (23) at the periphery of the recess (663) on the back surface (662) of the cap body (660).
- An ultraviolet transmission part (666) is formed of glass that transmits ultraviolet rays emitted from the ultraviolet light emitting element (3).
- the ultraviolet light emitting element (3) includes a first electrode (31) and a second electrode. (32) The light emitting devices (1a, 1b, 1c, 1d, 1e) in which the first electrode (31) and the second electrode (32) are arranged on one surface side in the thickness direction of the ultraviolet light emitting element (3).
- the second bonding metal layer (43) in the electrode (32) and the cap (6a, 6c, 6e, 6g), the first conductor portion (21) of the mounting substrate (2a, 2b, 2d), the first Two conductor portions (22) and the first joining metal layer (23) are joined by a first AuSn layer (71), a second AuSn layer (72), and a third AuSn layer (73), respectively, and the first AuSn layer (71), the second AuSn layer (72)
- the third AuSn layer (73) is collectively formed in the same process on the mounting substrate (2a, 2b, 2d).
- the manufacturing method of the light emitting device (1a, 1b, 1c, 1d, 1e, 1f, 1g, 1j) according to the twenty-first aspect of the present invention is the first aspect of the ultraviolet light emitting element (3) in the twentieth aspect.
- the electrode (31) and the second electrode (32) and the first conductor part (21) and the second conductor part (22) of the mounting substrate (2a, 2b, 2d) are respectively connected to the first AuSn layer (71 ) And the second AuSn layer (72), and the second bonding metal layer (43) of the cap (6a, 6c, 6e, 6g) and the first bonding process, following the first bonding process.
- a second bonding process is performed in which the first bonding metal layer (23) of the mounting substrate (2a, 2b, 2d) is bonded by the third AuSn layer (73), and the first bonding process and the first bonding process are performed.
- a light emitting device (1a, 1b, 1c, 1d, 1f, 1g, 1h, 1i, 1j) includes a mounting board (2a, 2b, 2d) and the mounting board (2a, 2b). 2d) and a spacer formed with a through hole (41) that is disposed on the mounting substrate (2a, 2b, 2d) and exposes the ultraviolet light emitting element (3). 4) and a cover (5) disposed on the spacer (4) so as to close the through hole (41) of the spacer (4), and the ultraviolet light emitting element (3) has an ultraviolet wavelength
- the spacer (4) includes a spacer body (40) formed of Si, and the through hole (41) is formed of the spacer body (40).
- the through hole ( 1) the opening area gradually increases as the distance from the mounting substrate (2a, 2b, 2d) increases, and the cover (5) is made of glass that transmits ultraviolet rays emitted from the ultraviolet light emitting element (3).
- the spacer (4) and the cover (5) are joined.
- the light emitting device (1a, 1b, 1c, 1d, 1f, 1g, 1h, 1i, 1j) according to the 23rd aspect of the present invention is the UV light emitting element (3) according to the 22nd aspect, wherein the UV-C The ultraviolet ray having the emission peak wavelength in the wavelength region is emitted.
- the light emitting device (1a, 1b, 1c, 1d, 1f, 1g, 1h, 1i, 1j) according to the 24th aspect of the present invention is the 22nd or 23rd aspect, wherein the spacer body (40) 401) is formed from a (100) plane single crystal Si substrate (400), and the inner side surface of the through hole (41) is a plane along the ⁇ 111 ⁇ plane.
- the light emitting device (1a, 1b, 1c, 1d, 1f, 1g, 1h, 1i, 1j) according to the 25th aspect of the present invention is the light emitting device according to the 24th aspect, wherein the spacer (4) has the through hole (41). ) Of the silicon oxide film formed along the ⁇ 111 ⁇ plane.
- the mounting substrate (2a, 2b, 2d), the spacer (4), and the cover (5) And a sealing portion (80) covering the ultraviolet light emitting element (3) in a space (8) surrounded by.
- a light emitting device (1g) includes a mounting substrate (2a, 2b, 2d), an ultraviolet light emitting element (3) mounted on the mounting substrate (2a, 2b, 2d), A cap (6g) disposed on the mounting substrate (2a, 2b, 2d) and having a recess (663) for accommodating the ultraviolet light emitting element (3).
- the cap (6g) A spacer (4) disposed on (2a, 2b, 2d) and having a through hole (41) for exposing the ultraviolet light emitting element (3) is formed, and the through hole (41) of the spacer (4) is closed. And a cover (5) disposed on the spacer (4) and joined to the spacer (4).
- the cover (5) is radiated from the ultraviolet light emitting element (3). Shaped by borosilicate glass that transmits ultraviolet light
- the spacer (4) includes a spacer body (40) made of Si and a silicon oxide film (46) formed on the side of the spacer body (40) facing the cover (5) (45). ), And the spacer (4) and the cover (5) are directly joined.
- the silicon oxide film (46) is a thermal oxide film.
- the thickness of the silicon oxide film (46) is 50 nm or more.
- the manufacturing method of the light emitting device (1g) includes a mounting substrate (2a, 2b, 2d) and an ultraviolet light emitting element (3) mounted on the mounting substrate (2a, 2b, 2d). And a cap (6g) formed on the mounting substrate (2a, 2b, 2d) and having a recess (663) for accommodating the ultraviolet light emitting element (3), the cap (6g) A spacer (4) formed on the mounting substrate (2a, 2b, 2d) and having a through hole (41) for exposing the ultraviolet light emitting element (3), and the through hole (41) of the spacer (4) And a cover (5) which is disposed on the spacer (4) and joined to the spacer (4) so as to block the ultraviolet light emitting element (3).
- the spacer (4) is a silicon oxide film formed on the side of the spacer body (40) formed of Si and the surface (45) facing the cover (5) of the spacer body (40). (46), wherein the spacer (4) and the cover (5) are directly joined to each other, the method for manufacturing the light emitting device (1g), wherein a plurality of the spacers (4) are formed.
- a wafer level bonded body is formed by directly bonding the wafer (4001) and a second wafer (5000) capable of forming a plurality of the covers (5) by anodic bonding, and then the wafer level bonded body is diced by dicing.
- a cap (6g) is formed, and the mounting substrate (2a, 2b, 2d) on which the ultraviolet light emitting element 3 is mounted is bonded to the cap (6g).
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Abstract
Description
以下では、本実施形態の発光装置1aについて、図1~8に基づいて説明する。なお、図1は、図2のX-X断面に対応する模式的な概略断面図である。
以下では、本実施形態の発光装置1cについて図13及び14に基づいて説明する。発光装置1cは、スペーサ4とカバー5とが無機接合材を用いて接合されている点が実施形態1の発光装置1aと相違する。なお、発光装置1cにおいて、発光装置1aと同様の構成要素については、発光装置1aと同一の符号を付して説明を省略する。
以下では、本実施形態の発光装置1dについて図15~18に基づいて説明する。発光装置1dは、実施形態1の発光装置1aの実装基板2aの代わりに実装基板2dを備えている点が発光装置1aと相違する。なお、発光装置1dにおいて、発光装置1aと同様の構成要素については、発光装置1aと同一の符号を付して説明を省略する。
以下では、本実施形態の発光装置1eについて図19及び20に基づいて説明する。発光装置1eは、実施形態1の発光装置1aのキャップ6aの代わりにキャップ6eを備えている点が実施形態1の発光装置1aと相違する。なお、発光装置1eにおいて、発光装置1aと同様の構成要素については、発光装置1aと同一の符号を付して説明を省略する。
以下では、本実施形態の発光装置1fについて図25及び26に基づいて説明する。発光装置1fは、実施形態4の発光装置1eの実装基板2aの代わりに実装基板2dを備えている点が発光装置1eと相違する。なお、発光装置1fにおいて、発光装置1eと同様の構成要素については、発光装置1eと同一の符号を付して説明を省略する。
上述のように、紫外線を出射する発光装置の分野においては、紫外線の高出力化が望まれている。
以下では、第1例の発光装置1hについて図30及び31に基づいて説明する。発光装置1hは、紫外線発光素子3の第1電極31、第2電極32と実装基板2aの第1導体部21、第2導体部22とが、それぞれ、Auバンプからなる接合部161、Auバンプからなる接合部162により接合されている点が実施形態1の発光装置1aと相違する。また、発光装置1hでは、第3バリア層83がスペーサ4の第2接合用金属層43と第3接合部63との間にある点が発光装置1aと相違する。なお、発光装置1hにおいて、発光装置1aと同様の構成要素については、発光装置1aと同一の符号を付して説明を省略する。
以下では、第2例の発光装置1iについて図32及び33に基づいて説明する。発光装置1iは、紫外線発光素子3の第1電極31、第2電極32と実装基板2dの第1導体部21、第2導体部22とが、それぞれ、Auバンプからなる接合部161、Auバンプからなる接合部162により接合されている点が実施形態3の発光装置1dと相違する。また、発光装置1iでは、第3バリア層83がスペーサ4の第2接合用金属層43と第3接合部63との間にある点が発光装置1aと相違する。なお、発光装置1iにおいて、発光装置1dと同様の構成要素については、発光装置1dと同一の符号を付して説明を省略する。
以下では、本実施形態の発光装置1jについて図34及び35に基づいて説明する。発光装置1jは、実装基板2aとスペーサ4とカバー5とで囲まれた空間8内で紫外線発光素子3を覆っている封止部80を備える点が実施形態1の発光装置1aと相違する。なお、発光装置1jにおいて、発光装置1aと同様の構成要素については、発光装置1aと同一の符号を付して説明を省略する。
上述の実施形態1~7から明らかなように、本発明に係る第1の態様の発光装置(1a、1b、1c、1d、1e、1f、1g、1j)は、実装基板(2a、2b、2d)と、前記実装基板(2a、2b、2d)に実装された紫外線発光素子(3)と、前記実装基板(2a、2b、2d)上に配置され前記紫外線発光素子(3)を収納する凹部(663)が形成されたキャップ(6a、6c、6e、6g)と、を備え、前記実装基板(2a、2b、2d)は、支持体(20a、20d)と、前記支持体(20a、20d)に支持された第1導体部(21)、第2導体部(22)及び第1接合用金属層(23)と、を備え、前記第1導体部(21)及び前記第2導体部(22)は、前記支持体(20a、20d)の表面(201)側において前記キャップ(6a、6c、6e、6g)の前記凹部(663)の内底面(664)に臨むように配置され、前記キャップ(6a、6c、6e、6g)は、表面(661)及び裏面(662)を有し前記裏面(662)に前記凹部(663)が形成されたキャップ本体(660)と、前記キャップ本体(660)の前記裏面(662)における前記凹部(663)の周部で前記第1接合用金属層(23)に対向して配置された第2接合用金属層(43)と、を備え、少なくとも、前記キャップ本体(660)の前記表面(661)と前記凹部(663)の内底面(664)との間の紫外線透過部(666)が、前記紫外線発光素子(3)から放射される紫外線を透過するガラスにより形成され、前記紫外線発光素子(3)は、第1電極(31)と、第2電極(32)と、を備え、前記紫外線発光素子(3)の厚さ方向の一面側に前記第1電極(31)及び前記第2電極(32)が配置されており、前記第1導体部(21)と前記第2導体部(22)と前記第1接合用金属層(23)とは、前記支持体(20a、20d)の表面(201)側で同じ積層膜から構成されており、前記第1導体部(21)、前記第2導体部(22)及び前記第1接合用金属層(23)それぞれにおける前記支持体(20a、20d)から最も離れた最上層はAuにより形成され、前記第1電極(31)と前記第1導体部(21)とが、AuSnにより形成された第1接合部(61)により接合され、前記第2電極(32)と前記第2導体部(22)とが、AuSnにより形成された第2接合部(62)により接合され、前記第1接合用金属層(23)と前記第2接合用金属層(43)とが、AuSnにより形成された第3接合部(63)により接合されている。
Claims (21)
- 実装基板と、前記実装基板に実装された紫外線発光素子と、前記実装基板上に配置され前記紫外線発光素子を収納する凹部が形成されたキャップと、を備え、
前記実装基板は、支持体と、前記支持体に支持された第1導体部、第2導体部及び第1接合用金属層と、を備え、
前記第1導体部及び前記第2導体部は、前記支持体の表面側において前記キャップの前記凹部の内底面に臨むように配置され、
前記キャップは、表面及び裏面を有し前記裏面に前記凹部が形成されたキャップ本体と、前記キャップ本体の前記裏面における前記凹部の周部で前記第1接合用金属層に対向して配置された第2接合用金属層と、を備え、少なくとも、前記キャップ本体の前記表面と前記凹部の内底面との間の紫外線透過部が、前記紫外線発光素子から放射される紫外線を透過するガラスにより形成され、
前記紫外線発光素子は、第1電極と、第2電極と、を備え、前記紫外線発光素子の厚さ方向の一面側に前記第1電極及び前記第2電極が配置されており、
前記第1導体部と前記第2導体部と前記第1接合用金属層とは、前記支持体の表面側で同じ積層膜から構成されており、
前記第1導体部、前記第2導体部及び前記第1接合用金属層それぞれにおける前記支持体から最も離れた最上層はAuにより形成され、
前記第1電極と前記第1導体部とが、AuSnにより形成された第1接合部により接合され、
前記第2電極と前記第2導体部とが、AuSnにより形成された第2接合部により接合され、
前記第1接合用金属層と前記第2接合用金属層とが、AuSnにより形成された第3接合部により接合されている、
ことを特徴とする発光装置。 - 前記第1導体部、前記第2導体部及び前記第1接合用金属層と、前記第1接合部、前記第2接合部及び前記第3接合部との間にそれぞれ、第1バリア層、第2バリア層及び第3バリア層が形成されており、
前記第1バリア層と前記第2バリア層と前記第3バリア層とは同じ材料でかつ、同じ厚さで形成されている、
ことを特徴とする請求項1記載の発光装置。 - 前記第1電極は、最表面がAu膜の表面により構成されている第1パッド電極層を備え、
前記第2電極は、最表面がAu膜の表面により構成されている第2パッド電極層を備え、
前記第2接合用金属層は、下地膜とAu膜との積層膜により構成されている、
ことを特徴とする請求項1又は2に記載の発光装置。 - 前記第3接合部は、前記キャップ本体の前記裏面における外周縁の全周に沿って形成されている、
ことを特徴とする請求項1乃至3のいずれか一項に記載の発光装置。 - 前記実装基板と前記キャップとで囲まれた空間を不活性ガス雰囲気としてある、
ことを特徴とする請求項4記載の発光装置。 - 前記キャップは、平面視において前記実装基板よりも小さい、
ことを特徴とする請求項1乃至5のいずれか一項に記載の発光装置。 - 前記実装基板は、第1外部接続電極及び第2外部接続電極と、前記支持体の厚さ方向に貫通して形成された第1貫通配線及び第2貫通配線と、を備え、
前記第1外部接続電極及び前記第2外部接続電極は、前記支持体の裏面に形成され、
前記第1外部接続電極は、前記第1貫通配線を介して前記第1導体部と電気的に接続され、
前記第2外部接続電極は、前記第2貫通配線を介して前記第2導体部と電気的に接続されている、
ことを特徴とする請求項1乃至6のいずれか一項に記載の発光装置。 - 前記支持体は、AlNセラミックにより形成されている、
ことを特徴とする請求項7記載の発光装置。 - 前記実装基板は、多層基板であり、
前記実装基板は、第1外部接続電極及び第2外部接続電極と、第1配線層と、第2配線層と、電気絶縁層と、を備え、
前記第1配線層及び前記第2配線層は、前記支持体の前記表面側に配置され、
前記第1導体部及び前記第1外部接続電極は、前記第1配線層上に配置されて前記第1配線層と電気的に接続され、
前記第2導体部及び前記第2外部接続電極は、前記第2配線層上に配置されて前記第2配線層と電気的に接続され、
前記電気絶縁層は、前記支持体の前記表面側で前記第1配線層と前記第2配線層とを覆うように配置され、
前記第1接合用金属層は、前記電気絶縁層上に配置されている、
ことを特徴とする請求項1乃至6のいずれか一項に記載の発光装置。 - 前記実装基板は、前記電気絶縁層からなる第1電気絶縁層とは別の第2電気絶縁層を備え、
前記支持体は、Siにより形成されており、
前記第2電気絶縁層は、前記支持体の前記表面上に配置され、
前記第1配線層及び前記第2配線層は、前記第2電気絶縁層上に配置されている、
ことを特徴とする請求項9記載の発光装置。 - 前記キャップは、前記実装基板上に配置され前記紫外線発光素子を露出させる貫通孔が形成されたスペーサと、前記スペーサの前記貫通孔を塞ぐように前記スペーサ上に配置されており前記スペーサに接合されているカバーと、を備え、前記カバーにおいて前記貫通孔により露出した面が前記凹部の内底面を構成しており、
前記カバーは、前記紫外線発光素子から放射される紫外線を透過するガラスにより形成され、
前記スペーサは、Siにより形成されたスペーサ本体と、前記スペーサ本体における前記実装基板との対向面側で前記第1接合用金属層に対向して配置された前記第2接合用金属層と、を備える、
ことを特徴とする請求項1乃至10のいずれか一項に記載の発光装置。 - 前記貫通孔は、前記スペーサ本体に形成されており、
前記貫通孔は、前記実装基板から離れるにつれて開口面積が漸次増加している、
ことを特徴とする請求項11記載の発光装置。 - 前記スペーサ本体は、表面が(100)面の単結晶Si基板から形成されており、前記貫通孔の内側面が{111}面に沿った面である、
ことを特徴とする請求項12記載の発光装置。 - 前記スペーサは、前記貫通孔の前記内側面が{111}面に沿って形成されたシリコン酸化膜の表面により構成されている、
ことを特徴とする請求項13記載の発光装置。 - 前記紫外線発光素子は、UV-Cの波長域に発光ピーク波長を有する紫外線を放射するように構成されている、
ことを特徴とする請求項11乃至14のいずれか一項に記載の発光装置。 - 前記カバーを形成するガラスは、アルカリ成分を含んでおり、
前記スペーサと前記カバーとが直接接合されている、
ことを特徴とする請求項11乃至15のいずれか一項に記載の発光装置。 - 前記スペーサと前記カバーとが、前記スペーサ本体の熱膨張係数と前記カバーの熱膨張係数との間の熱膨張係数を有する低融点ガラスにより形成された第4接合部により接合されている、
ことを特徴とする請求項11乃至15のいずれか一項に記載の発光装置。 - 前記スペーサは、前記スペーサ本体における前記カバーとの対向面側に形成されたシリコン酸化膜を備える、
ことを特徴とする請求項16記載の発光装置。 - 前記キャップ本体の全体が、前記紫外線発光素子から放射される紫外線を透過するガラスにより形成されている、
ことを特徴とする請求項1乃至10のいずれか一項に記載の発光装置。 - 実装基板と、前記実装基板に実装された紫外線発光素子と、前記実装基板上に配置され前記紫外線発光素子を収納する凹部が形成されたキャップと、を備え、
前記実装基板は、支持体と、前記支持体に支持された第1導体部、第2導体部及び第1接合用金属層と、を備え、
前記第1導体部及び前記第2導体部は、前記支持体の表面側において前記キャップの前記凹部の内底面に臨むように配置され、
前記キャップは、表面及び裏面を有し前記裏面に前記凹部が形成されたキャップ本体と、前記キャップ本体の前記裏面における前記凹部の周部で前記第1接合用金属層に対向して配置された第2接合用金属層と、を備え、少なくとも、前記キャップ本体の前記表面と前記凹部の内底面との間の紫外線透過部が、前記紫外線発光素子から放射される紫外線を透過するガラスにより形成され、
前記紫外線発光素子は、第1電極と、第2電極と、を備え、前記紫外線発光素子の厚さ方向の一面側に前記第1電極及び前記第2電極が配置されている、発光装置の製造方法であって、
前記キャップを形成し、
その後、前記紫外線発光素子の前記第1電極、前記第2電極及び前記キャップにおける前記第2接合用金属層と前記実装基板の前記第1導体部、前記第2導体部及び前記第1接合用金属層とをそれぞれ第1AuSn層、第2AuSn層及び第3AuSn層により接合するようにし、
前記第1AuSn層、前記第2AuSn層及び前記第3AuSn層は、前記実装基板に対して同一工程で一括形成される、
ことを特徴とする発光装置の製造方法。 - 前記紫外線発光素子の前記第1電極及び前記第2電極と前記実装基板の前記第1導体部及び前記第2導体部とをそれぞれ前記第1AuSn層及び前記第2AuSn層により接合する第1接合処理を行い、
前記第1接合処理に引き続き、前記キャップの前記第2接合用金属層と前記実装基板の前記第1接合用金属層とを前記第3AuSn層により接合する第2接合処理を行うようにし、
前記第1接合処理と前記第2接合処理とを、1台のボンディング装置のボンディング室で連続して行う、
ことを特徴とする請求項20記載の発光装置の製造方法。
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