WO2015109649A1 - 零电流的上电复位电路 - Google Patents
零电流的上电复位电路 Download PDFInfo
- Publication number
- WO2015109649A1 WO2015109649A1 PCT/CN2014/073712 CN2014073712W WO2015109649A1 WO 2015109649 A1 WO2015109649 A1 WO 2015109649A1 CN 2014073712 W CN2014073712 W CN 2014073712W WO 2015109649 A1 WO2015109649 A1 WO 2015109649A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- circuit
- supply voltage
- power
- schmitt trigger
- power supply
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
- H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/24—Resetting means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/28—Modifications for introducing a time delay before switching
- H03K17/284—Modifications for introducing a time delay before switching in field effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
- H03K3/037—Bistable circuits
- H03K3/0377—Bistables with hysteresis, e.g. Schmitt trigger
Definitions
- the present invention relates to a power-on reset circuit, and more particularly to a zero-power power-on reset circuit. Background technique
- the power-on reset circuit (Power-on-RST ci RCu it, P0R) is used to ensure that the system provides a global reset signal at the initial stage of starting the power supply of the semiconductor device, ensuring that the entire device is activated from a certain state. .
- FIG. 1 is a schematic diagram of a conventional power-on reset circuit.
- the supply voltage VDD ramps up from zero voltage, thereby charging capacitor C through resistor R.
- the voltage at node Va follows the VDD voltage.
- the Schmitt trigger 10 is inverted, and the ⁇ RST signal is high.
- the high-level ⁇ RST signal provides a global reset signal for the system, ensuring that the entire system is in a certain state. start up.
- the high level ⁇ 1 ⁇ signal is turned on by the inverting amplifier 1 2 to turn on the PM0S transistor 14, thereby shorting the capacitor C to VDD.
- the entire reset circuit has no static current consumption and does not generate power consumption.
- the power supply voltage may be unstable, with small faults or short drops, which may last for hundreds of microseconds or as large as milliseconds.
- the RC in the power-on reset circuit is relatively large, and the Va drop is small enough to fall to a second threshold that causes the Schmitt trigger 10 to flip again. Therefore, in the case of a power failure, ⁇ RST is likely to remain high.
- the device may be switched on and off frequently, so VDD will drop briefly.
- the power-on reset circuit shown in Figure 1 the electronic device cannot be reset normally in the case of a power failure or a short drop in the power supply voltage. Situation that may be confusing
- Embodiments of the present invention provide a power-on reset circuit.
- the power-on reset circuit includes an RC circuit; a Schmitt trigger, the Schmitt trigger has a first threshold and a second threshold; an inverter; and, a first PM0S tube; when the power supply voltage is energized, the power supply voltage passes through the RC
- the circuit charges the capacitor; when the voltage of the capacitor reaches the first threshold, the Schmitt trigger flips to output a first level, thereby resetting the system where the circuit is located;
- the power-on reset circuit includes a discharge circuit for detecting the power supply a short drop in voltage, and outputting a first signal to the input of the Schmitt trigger when the short drop is detected, the first signal allowing the Schmitt trigger to flip again to output a second level, thereby inverting
- the amplifier turns off the first PM0S tube; when the supply voltage ramps up again, the Schmitt trigger flips and outputs a first level, thereby resetting the system in
- the discharge circuit includes a detection circuit for detecting a short drop in the power supply voltage; and when the short drop is detected, turning on the second PMOS transistor to output the first signal.
- the discharge circuit includes a third PMOS transistor and a first NMOS transistor connected to the drain and the source, and a control circuit that controls the gate of the third PMOS transistor and the gate of the first NMOS transistor, such that The third PMOS transistor and the first NMOS transistor are turned on when there is a short drop in the supply voltage, thereby passing the first signal of the drain of the second PMOS transistor to the input of the Schmitt trigger.
- the control circuit includes a holding circuit for maintaining voltage stability when the power supply voltage is briefly decreased; a fourth PM0S whose gate is connected to the power supply voltage, a drain receiving and holding circuit output voltage, a source; an inverter, a reverse The input terminal of the phase comparator is connected to the source of the fourth PM0S; the fifth PM0S transistor has its gate and source connected to the power supply voltage and the drain connected to the output of the inverter.
- the hold circuit is an RC circuit.
- the power-on reset circuit of the embodiment of the invention can effectively overcome the problem of system state disorder caused by power failure.
- FIG. 1 is a schematic diagram of a conventional power-on reset circuit
- Figure 3 is a schematic view of a discharge circuit
- FIG. 4 is a schematic diagram of a gate control circuit of a PM0S tube and a ⁇ OS tube;
- Figure 5 is a schematic diagram of waveforms of signals of the circuit of Figure 3.
- FIG. 6 is a schematic diagram showing the waveforms of the signals of the circuit of Figure 4. detailed description
- the power-on reset circuit includes a conventional power-on reset circuit; the power-on reset circuit further includes a discharge circuit 210.
- a conventional power-on reset circuit includes an RC circuit 202, a Schmitt trigger 204, an inverter 206, and a PM0S transistor 208.
- the RC circuit 202 is composed of a resistor R and a capacitor C.
- the Schmitt trigger 204 has two inversion thresholds, a first threshold and a second threshold, respectively.
- VDD supply voltage
- VDD voltage
- VDD voltage across capacitor C gradually increases.
- the Schmitt trigger 204 flips and outputs a high level, thereby resetting the circuits/components/modules of the system in which the circuit is located.
- the RST signal turns the PMOS transistor 208 through the inverting amplifier 206, thereby shorting the capacitor C to VDD.
- the entire reset circuit has no quiescent current consumption and does not generate power consumption.
- the power-on reset time is related to the RC value. If the resistance of the resistor is l OOk D , the capacitance of C At 10pF, the reset can be completed in about 1 ⁇ s.
- the discharge circuit 210 is for detecting a short drop in the VDD voltage, and outputs a low level to the node a when the short drop is detected, thereby causing Va to shortly follow VDD for a short drop.
- the short drop of Va reaches a second threshold that can cause the Schmitt trigger 204 to flip again, the output signal RST of the Schmitt trigger 204 goes low, and the low level turns off the PM0S via the inverting amplifier 206. Tube 208.
- FIG. 3 is a schematic diagram of the discharge circuit 210.
- the discharge circuit includes a VDD detection circuit 302.
- the VDD detection circuit 302 can be formed by a capacitor 304 and a resistor 306.
- resistor 306 can be constructed of a CMOS transistor having a relatively high resistance, such as 10 ⁇ .
- capacitor 304 is a true capacitor, and a large capacity capacitor can be selected, for example, the capacity of the capacitor is a few pF.
- VDD is stable, the voltage across capacitor 304 is equal to VDD, and the voltage at node b, Vb, is zero.
- the voltage Vb of node b substantially follows the change in VDD due to the large RC constant of capacitor 304 and resistor 306.
- the discharge circuit also includes a PMOS transistor 308.
- the PMOS transistor 308 can select a tube having a low impedance, such as a W/L large MOS tube.
- VDD voltage drops rapidly, for example, when the voltage drop value reaches V th , pM0S and the voltage Vb of the node b falls by approximately Vth, since the source voltage of the PMOS transistor 308 remains substantially unchanged, the gate voltage of the PMOS transistor 308 and the PMOS are maintained.
- the difference Vgs of the source voltage of the tube 308 is greater than the threshold voltage of the PMOS transistor 308, the PMOS transistor 308 is turned on, and its source is discharged through the ground, thereby pulling down the PMOS transistor source voltage.
- the discharge circuit may further include a pair of MOS tubes, PMOS tubes 310 and ⁇ OS tubes 312, respective The drain (or source) poles are connected together and connected to the source of the PMOS transistor 308; the respective drain (or source) poles are connected together to provide a voltage signal for node a.
- the PM0S tube 310 and the ⁇ OS tube 312 are normally turned off to prevent the power-on reset circuit from operating under normal conditions. If the gates PG of the PM0S transistor 310 and the gate of the NMOS transistor 312 are controlled so that the VDD voltage is briefly lowered, the PM0S transistor and the ⁇ 0S transistor are turned on, thereby transferring the low level of the drain of the NMOS transistor to the a node.
- Figure 5 is a schematic diagram of the waveforms of the signals of the circuit of Figure 3.
- resistor 306 and capacitor 304 or the W/L value of PMOS 308 can be selected as needed to adjust the response speed of the discharge circuit to a short drop in VDD voltage.
- the discharge circuit can be provided with a delay circuit to effect a reset of the system only if the duration of the short-term drop in the supply voltage is sufficiently long.
- the control circuit includes a hold circuit 402 for generating a stable voltage when the VDD voltage is briefly reduced.
- the resistor 404 can be constructed of a CMOS tube.
- Capacitor 406 may have a capacity greater than, for example, 20 pF. The voltage at node c is stable at a certain level when the VDD voltage drops briefly.
- the control circuit includes a PMOS 408 whose gate is connected to VDD, the source is connected to the c node, and the drain is grounded through the resistor 410 at the NG node.
- the resistor 410 may be composed of a single NM0S tube or a tantalum ⁇ OS tube.
- the control circuit includes an inverter 414 having an input coupled to the NG point and grounded through a capacitor 412, the output being a PG node.
- Capacitor 412 acts as a filter.
- the control circuit includes a PM0S transistor 416 having a gate and source connected in common to VDD and a drain connected to the PG node.
- the hold circuit 402 maintains Vc at a higher level, while the ⁇ OS transistor 408 is turned on, causing the high level to pass to the Ng node.
- the NMOS transistor 416 is also turned off when VDD is briefly lowered, so the output terminal PG of the inverter is maintained at a low level.
- the PMOS transistor 310 The ⁇ OS tube 312 is turned on.
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Electronic Switches (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/389,407 US9484910B2 (en) | 2014-01-26 | 2014-03-19 | Zero-current POR circuit |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410038090.3A CN104811171B (zh) | 2014-01-26 | 2014-01-26 | 零电流的上电复位电路 |
CN201410038090.3 | 2014-01-26 |
Publications (1)
Publication Number | Publication Date |
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WO2015109649A1 true WO2015109649A1 (zh) | 2015-07-30 |
Family
ID=53680714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2014/073712 WO2015109649A1 (zh) | 2014-01-26 | 2014-03-19 | 零电流的上电复位电路 |
Country Status (3)
Country | Link |
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US (1) | US9484910B2 (zh) |
CN (1) | CN104811171B (zh) |
WO (1) | WO2015109649A1 (zh) |
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CN110233614A (zh) * | 2019-05-22 | 2019-09-13 | 长沙景美集成电路设计有限公司 | 一种防esd干扰的上电复位电路 |
CN110739942A (zh) * | 2019-09-05 | 2020-01-31 | 广州粒子微电子有限公司 | 一种上电复位电路 |
CN116346103A (zh) * | 2023-05-23 | 2023-06-27 | 成都市易冲半导体有限公司 | 检测电源信号的复位电路及电路复位系统 |
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CN104778933B (zh) * | 2015-04-15 | 2017-04-19 | 昆山龙腾光电有限公司 | 电源管理电路 |
CN106505980B (zh) * | 2015-09-07 | 2019-04-19 | 中芯国际集成电路制造(上海)有限公司 | 电压探测电路以及上电复位电路 |
CN106411300B (zh) * | 2016-09-26 | 2019-05-31 | 上海华力微电子有限公司 | 一种上电复位电路 |
JP7075715B2 (ja) * | 2016-10-28 | 2022-05-26 | ラピスセミコンダクタ株式会社 | 半導体装置及びパワーオンリセット信号の生成方法 |
US10156595B2 (en) * | 2016-12-09 | 2018-12-18 | Microsemi Soc Corp. | Power supply glitch detector |
CN107342757B (zh) * | 2017-07-12 | 2020-12-04 | 上海华力微电子有限公司 | 一种基于改进的带隙基准结构的上电复位电路 |
KR20200140972A (ko) | 2019-06-07 | 2020-12-17 | 삼성전자주식회사 | 전압 감시 장치 및 그것을 포함하는 전자 장치 |
CN110350898B (zh) * | 2019-07-16 | 2023-06-16 | 常州欣盛半导体技术股份有限公司 | 一种载带芯片用开机关机重置电路及其工作方法 |
US11855641B2 (en) | 2020-07-07 | 2023-12-26 | Infineon Technologies LLC | Integrated resistor network and method for fabricating the same |
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- 2014-03-19 US US14/389,407 patent/US9484910B2/en active Active
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US4716322A (en) * | 1986-03-25 | 1987-12-29 | Texas Instruments Incorporated | Power-up control circuit including a comparator, Schmitt trigger, and latch |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN110233614A (zh) * | 2019-05-22 | 2019-09-13 | 长沙景美集成电路设计有限公司 | 一种防esd干扰的上电复位电路 |
CN110739942A (zh) * | 2019-09-05 | 2020-01-31 | 广州粒子微电子有限公司 | 一种上电复位电路 |
CN110739942B (zh) * | 2019-09-05 | 2023-10-20 | 广州粒子微电子有限公司 | 一种上电复位电路 |
CN116346103A (zh) * | 2023-05-23 | 2023-06-27 | 成都市易冲半导体有限公司 | 检测电源信号的复位电路及电路复位系统 |
Also Published As
Publication number | Publication date |
---|---|
CN104811171A (zh) | 2015-07-29 |
US20160261264A1 (en) | 2016-09-08 |
US9484910B2 (en) | 2016-11-01 |
CN104811171B (zh) | 2018-01-09 |
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