WO2015100770A1 - Tft-lcd阵列基板及其数据线断线的修复方法 - Google Patents

Tft-lcd阵列基板及其数据线断线的修复方法 Download PDF

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WO2015100770A1
WO2015100770A1 PCT/CN2014/070367 CN2014070367W WO2015100770A1 WO 2015100770 A1 WO2015100770 A1 WO 2015100770A1 CN 2014070367 W CN2014070367 W CN 2014070367W WO 2015100770 A1 WO2015100770 A1 WO 2015100770A1
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line
electrode line
electrode
data
pixel region
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French (fr)
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徐亮
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement

Definitions

  • the present invention relates to the field of TFT-LCD substrate manufacturing, and in particular to a TFT-LCD. Repair method of array substrate and its data line disconnection.
  • the existing electronic cigarette includes a disposable electronic cigarette in which the atomizer and the battery rod are integrated, and an electronic cigarette in which the atomizer and the battery rod are detachably connected.
  • the existing detachably connected electronic cigarettes are generally connected by a battery rod and an atomizer connection to achieve charging and discharging.
  • the atomizer needs to be unscrewed before charging, so charging is very inconvenient, and disassembling the atomizer and the battery rod for a long time is likely to cause loose structure between the two, and the electrical connection is unreliable.
  • the electronic cigarette of the integral structure cannot be charged, and thus it is easy to cause the problem that the smoke oil has not been used up after the battery is exhausted. Therefore, there is an urgent need to provide a charging structure that can be charged without removing the atomizer. .
  • liquid crystal display devices Liquid Crystalline
  • PDP Plasma Display Panel
  • OLED Organic Light-Emitting Diode
  • liquid crystal display devices are gradually replacing cold cathode display devices due to their advantages of low weight, small size, and low power consumption.
  • the original liquid crystal display device was passively driven, and the so-called passive driving was to apply a voltage directly to the upper and lower electrodes of the pixel.
  • the liquid crystal is driven by the voltage difference between the upper and lower electrodes to form a bright and dark display.
  • the mainstream is basically using thin film transistors ( Thin Film Transistor (TFT) to drive liquid crystal, TFT
  • TFT Thin Film Transistor
  • the switch is turned on and off under signal control, and different voltages are written to the pixel electrodes of the lower substrate (array substrate). After writing, the TFT is turned off by the signal to hold the voltage, thereby achieving high resolution and high gray scale. among them
  • the control signal of the TFT is input through the gate line, and the voltage on the pixel electrode is input through the data line.
  • the resolution of TFT liquid crystal display devices can reach 1920 ⁇ 1080, and some can reach 3840 ⁇ 2160 Resolution.
  • the currently used repair method is: using Laser CVD (chemical vapor deposition) To fix it.
  • the principle is realized by laser catalyzing the decomposition of tungsten hexacarbonyl, and the tungsten metal is deposited on the surface of the substrate to function as a conductor.
  • the repair method includes: growing metal tungsten at the broken portion by Laser CVD; Laser Cut next to the pixel electrode ITO (Indium Tin Oxides Breaking; melting the two ends by laser to connect the metal tungsten and the metal trace under the insulating film.
  • This repair process is suitable for general array substrates. Because the film thickness of each layer is not very high, generally 0.3 ⁇ 0.4um, the thickest will generally not exceed 0.6um . When repairing, the difference in film thickness caused by these different thicknesses is relatively small; therefore, the metal tungsten is relatively not easily broken at the time of deposition, and the repair success rate is relatively guaranteed.
  • the object of the present invention is to provide a TFT-LCD array substrate in view of the above drawbacks, and to provide an improved TFT-LCD.
  • the array substrate includes a first metal layer, a second metal layer, and a transparent electrode layer disposed in order from bottom to top, wherein the first metal layer is formed with a gate line and a common electrode line, and the second metal layer is formed with data a pixel in which the pixel electrode is formed, the gate line intersects with the data line to form a pixel region, the pixel electrode and the common electrode line are disposed in the pixel region, and the common electrode line includes a first electrode line and a second electrode line connected, the projection of the second electrode line and the data line on the second metal layer being parallel to each other, the first electrode line and the data line being The projections on the second metal layer intersect.
  • the first electrode line is an integral structure parallel to the gate line
  • the second electrode line is a discontinuous structure perpendicular to the gate line.
  • the second electrode line includes a first second electrode line and a second sub-electrode line disposed in parallel with each other, the common electrode line being the first sub-electrode line, the second sub-electrode line, and the first H formed by interconnecting one electrode line Type structure.
  • the array substrate further includes a connection line disposed in the same layer as the pixel electrode, the connection line is spanned on the gate line, and one end of the connection line and the second side of the gate line side The electrode lines are connected, and the other end of the connection line is connected to the second sub-electrode line on the other side of the gate line.
  • the common electrode lines respectively located on both sides of each of the gate lines are connected to each other through the connection lines.
  • the invention also provides a data line disconnection repairing method for a TFT-LCD array substrate, comprising:
  • the common electrode line includes a first electrode line and a second electrode line connected to each other, the second electrode line and The projections of the data lines on the second metal layer are parallel to each other, the first electrode lines intersect the projection of the data lines on the second metal layer; the breakpoint is broken by a laser cutting method A connection between a common electrode line in a pixel region and a common electrode line in an adjacent pixel region.
  • the step S2 includes:
  • the step S2 includes:
  • the data line is in communication with the first electrode line, a second electrode line connected between the first electrode line and another first electrode line, and another first electrode line.
  • the step S2 includes:
  • the data lines on both sides of the breakpoint are respectively welded to the adjacent second electrode lines by a laser welding method, and a fusion joint is formed between the data lines and the second electrode lines;
  • step S2 further includes:
  • the disconnected data line is connected by the second electrode line.
  • the invention also provides a data line disconnection repairing method for a TFT-LCD array substrate, the TFT-LCD
  • the array substrate includes a first metal layer, a second metal layer, and a transparent electrode layer disposed in this order from bottom to top, in which a gate line and a common electrode line are formed, and a data line is formed in the second metal layer a pixel electrode is formed in the transparent electrode layer, the gate line and the data line intersect to form a pixel region, the pixel electrode and the common electrode line are disposed in the pixel region, and the common electrode line includes interconnecting a first electrode line and a second electrode line, wherein the projection of the second electrode line and the data line on the second metal layer are parallel to each other, and the first electrode line and the data line are in the The projections on the two metal layers intersect;
  • the step S2 includes:
  • step S2 further includes:
  • the data line is in communication with the first electrode line, a second electrode line connected between the first electrode line and another first electrode line, and another first electrode line.
  • the step S2 includes:
  • step S2 further includes:
  • the disconnected data line is connected by the second electrode line.
  • the invention has the beneficial effects that the common electrode line in the pixel region is used as a line connecting the break points of the repair data line, and is connected with the data lines on both sides of the data line break point, and the pixel at the break point is disconnected.
  • This repair overcomes the step difference in the traditional repair method and improves the repair success rate.
  • FIG. 1 is a schematic structural diagram of a basic embodiment of a TFT-LCD array provided by the present invention
  • FIG. 2 is a schematic diagram of repairing a data line break of a TFT-LCD array substrate of the present invention
  • FIG. 3 is a schematic view showing a second embodiment of repairing data disconnection of a TFT-LCD array substrate according to the present invention.
  • FIG. 1 is a plan view showing a first embodiment of a TFT-LCD array substrate of the present invention, reflecting the structure of four pixel regions.
  • This embodiment TFT-LCD The main structure of the array substrate includes a substrate (not shown) arranged in order from bottom to top, a first metal layer (not labeled), a second metal layer (not labeled), a transparent electrode layer (not labeled), and is disposed at the first a gate insulating layer (not shown) between the metal layer and the second metal layer, a passivation layer (not shown) disposed between the second metal layer and the transparent electrode layer, and a passivation layer and a transparent electrode The color layer between the layers ( RGB layer) (not shown). As shown in FIG.
  • a gate line 2 and a common electrode line are formed on the first metal layer; a data line 1 is formed on the second metal layer, and a pixel electrode 3 is formed on the transparent electrode layer. And a thin film transistor (not shown).
  • the gate line 1 and the data line 1 cross each other to form a pixel area.
  • a thin film transistor and a pixel electrode 3 are mounted in the pixel region.
  • Grid line 2 It is used to provide an on or off signal to the thin film transistor, the data line 1 is used to supply a data signal to the pixel electrode 3, and the common electrode line and the pixel electrode 3 constitute a storage capacitor.
  • a first metal layer is deposited on the substrate, and the first metal layer may be a single metal layer of a metal such as molybdenum, aluminum, an aluminum-nickel alloy, a molybdenum-tungsten alloy, a chromium or copper, or a single-layer metal layer.
  • a multilayer composite layer Patterning the first metal layer with a mask to form a gate line on the substrate 2 and the pattern of the common electrode lines.
  • a gate electrode (not shown) is provided on the gate line 2.
  • the common electrode line includes a first electrode line 4 and a second electrode line (not labeled).
  • the first electrode line 4 is parallel to the gate line 2
  • the overall structure, the second electrode line is a discontinuous structure perpendicular to the gate line 2 and is located between the adjacent two gate lines 2.
  • the projections of the second electrode line and the data line 1 on the second metal layer are parallel to each other, and the first electrode line 4 Intersecting with the projection of data line 1 on the second metal layer.
  • the second electrode line includes a first sub-electrode line 5 and a second sub-electrode line 6 which are disposed in parallel with each other.
  • the common electrode line is composed of the first electrode line 4 And an H-type structure in which the first sub-electrode line 5 and the second sub-electrode line 6 are connected to each other.
  • a gate insulating layer is formed on the surface of the gate line 2, the common electrode line, and the substrate, and the gate insulating layer is an amorphous silicon film layer.
  • the data line 1 is substantially monolithic with the source.
  • the data line 1 is parallel to the projection of the second electrode line on the second metal layer, and the data line 1 A projection intersects the first electrode line 4 on the second metal layer.
  • a passivation layer is formed on the surface of the source, drain and gate insulating layers, and the passivation layer is etched to form a contact hole (not shown).
  • a chemical vapor deposition process is employed on the data line 1 A passivation layer is formed on the surface of the common electrode line and the gate insulating layer, and then a contact hole is formed in the passivation layer by a photolithography process, and the contact hole is located in the passivation layer above the drain.
  • RGB layer Forming a color layer (RGB layer) on the surface of the passivation layer, RGB The layer is formed on the passivation layer and exposed to light and developed in the pixel region.
  • the RGB layer since the RGB layer is added between the transparent electrode layer and the first metal layer, the RGB layer has a thickness of 3 ⁇ m to 5 ⁇ . m, thus increasing the distance between the transparent electrode layer and the first metal layer, so that the capacitance formed between the two is small, which in turn reduces the RC delay.
  • a transparent electrode layer is formed on the surface of the RGB layer, and etching the transparent electrode layer to form a pixel electrode 3 , a thin film transistor (not shown).
  • a transparent electrode layer is formed on the surface of the RGB layer by a physical vapor deposition process, and the transparent electrode layer is a transparent metal layer, and the material is indium tin oxide (ITO). ).
  • ITO indium tin oxide
  • a pixel electrode 3 is formed on the transparent electrode layer by a photolithography process, and the pixel electrode 3 is electrically connected through a contact hole and a drain.
  • a connecting line 7 is also formed in the transparent electrode layer. Setting a connection line between every two adjacent pixel regions in the same column of pixel regions 7.
  • the connection line 7 is spanned over the gate line 2 between the two adjacent pixel regions.
  • One end of the connecting line 7 passes through the grid line 2 A contact hole on the passivation layer in the pixel region on one side is connected to the second sub-electrode line 6 in the pixel region, and the other end of the connection line 7 passes through the gate line 2 A contact hole on the passivation layer in the pixel region on the other side is connected to the second sub-electrode line 6 in the pixel region.
  • a second sub-electrode line 6 on both sides of the gate line 2 passes through the connection line 7
  • the common electrode lines connected in the two adjacent pixel regions in the same column of pixel regions are connected to form a common common electrode line (Mesh Com) through the connection line 7.
  • This Mesh Com The common electrode lines on both sides of the gate line 2 can be made to communicate, so that the common electrode lines located in different pixel regions on the TFT-LCD array substrate are completely connected.
  • the connecting wire 7 is made of indium tin oxide ( Made of ITO), it is a transparent material, which increases the light transmittance of the TFT-LCD array substrate and does not cause light leakage.
  • the common electrode line on the first metal layer is H
  • the type structure increases the light transmittance of the TFT-LCD array substrate by the structural design of the remaining structure and the transparent electrode layer thereon.
  • FIG. 3 is a schematic diagram of repairing a data line disconnection of a TFT-LCD array substrate according to the present invention. As shown in Figure 3, find out the data line 1 The position of the first breakpoint 41 appears. First, the data line 1 on the upper side of the first break point 41 of the data line 1 is fused to the second sub-electrode line 6 adjacent to the right side thereof by a laser welding method, and the second sub-electrode line 6 is fused at the second sub-electrode line 6 Forming a first fusion splice point 51 with the data line 1; and welding the data line 1 on the lower side of the first breakpoint 41 to the second sub-electrode trace 6 adjacent to the right side thereof, and the second sub-electrode line 6 is Data line 1 A second fusion splice 52 is formed therebetween.
  • the first electrode line 4 in the pixel region adjacent to the first fusion splice 51 and the second fusion splice 52 is cut by a cutting method to form break points 31 and 32, respectively. Therefore, the common electrode line of the pixel region where the first break point 41 is located is isolated from the common electrode line of the adjacent pixel region, and the transmission of the gate line signal is ensured. With this repair method, the data line 1 is made through the second sub-electrode line 6 Reconnect.
  • the second sub-electrode line 6 refers to one electrode line or two second sub-electrode lines 6 that are connected by the connection line 7.
  • FIG. 4 is a schematic view showing a second embodiment of repairing data disconnection of a TFT-LCD array substrate according to the present invention.
  • Find the data line as shown in Figure 4. 1 The position of the second breakpoint 15 appears.
  • the data line 1 on the upper side of the second break point 15 and the first electrode line 4 on the second metal layer are projected by laser welding. Welding, forming a third fusion splice point 21 at the intersection of the two projections; and then connecting the data line 1 on the lower side of the second breakpoint 15 with another first electrode line intersecting the projection on the second metal layer 4 Welding, forming a fourth fusion joint 22 at the intersection of the two projections.
  • the first electrode line 4 in the pixel region adjacent to the third fusion splice 21 is interrupted by a laser cutting method to form a break point 11 , 12
  • the first electrode line 4 in the pixel area adjacent to the fourth welding point 22 is interrupted to form the breaking points 13 and 14; thus the second breaking point 15
  • the common electrode line in the pixel area is isolated from the common electrode line of the other pixel area to ensure the transmission of the gate line signal.
  • the first electrode line 4 in one pixel region and the second sub-electrode line in the pixel region are passed 6.
  • the connecting line 7 and the first electrode line 4 in another adjacent pixel area and the second sub-electrode line 6 in the area reconnect the data line 1.
  • the present invention fuses the common electrode line in the pixel area as a line connecting the break point of the repair data line, and splices it with the data line on both sides of the data line break point, and simultaneously disconnects the pixel area in the break point.
  • the connection of the common electrode line and the common electrode line of the adjacent pixel area thereby realizing the repair of the data line break point.
  • This repair overcomes the step difference in the traditional repair method and improves the repair success rate.

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Abstract

一种TFT-LCD阵列基板及其数据线断线的修复方法，其中，该TFT-LCD阵列基板包括由下向上依次设置的第一金属层、第二金属层和透明电极层，该第一金属层中形成有栅线（2）和共通电极线，第二金属层中形成有数据线（1），透明电极层中形成有像素电极（3），栅线（2）与数据线（1）交叉形成像素区域，像素电极（3）以及共通电极线装设于像素区域中，共通电极线包括相互连接的第一电极线（4）和第二电极线，第二电极线与数据线（1）在第二金属层上的投影相互平行，第一电极线（4）与数据线（1）在第二金属层上的投影相交。

Description

TFT-LCD 阵列基板及其数据线断线的修复方法 技术领域
本发明涉及一种 TFT-LCD 基板制造领域，尤其涉及一种 TFT-LCD 阵列基板及其数据线断线的修复方法。
背景技术
电子烟主要用于戒烟和替代香烟。现有的电子烟包括雾化器与电池杆为一体结构的一次性电子烟及雾化器和电池杆可拆卸连接的电子烟。现有的所述可拆卸连接的电子烟一般采用电池杆和雾化器连接处相连接以实现充电和放电。充电时，需将雾化器拧下来后才能充电，因此，充电很不方便，且长时间拆卸所述雾化器及电池杆容易造成两者之间的结构松动，容易造成电连接不可靠。对于一体结构的所述电子烟，不能充电，因而容易导致电池耗尽后烟油还未用尽的问题。因此，急需提供一种无需拆除雾化器即可实现充电的充电结构。 。
随着信息社会的发展，人们对显示设备的需求得到了增长。为了满足这种不断增长地需求，平板显示设备比如液晶显示器件（ Liquid Crystalline Display LCD ）、等离子体显示器件（ Plasma Display Panel ， PDP ）、 OLED （ Organic Light-Emitting Diode ）显示器件等都得到了迅猛的发展。在平板显示器件当中，液晶显示器件由于其重量低、体积小、能耗低的优点，正在逐步取代冷阴极显示设备。
最初的液晶显示器件是被动驱动，所谓被动驱动，是将电压直接加在像素的上下电极上。通过上下电极上的电压差来驱动液晶，形成亮暗显示。目前主流基本上都是使用薄膜晶体管（ Thin Film Transistor ， TFT ）来驱动液晶， TFT 开关在信号控制下打开和关断，将不同的电压写入下基板（阵列基板）的像素电极。写入后， TFT 在信号作用下关断，将电压保持住，从而实现了高分辨率和高灰阶数。其中 TFT 的控制信号通过栅线输入，像素电极上的电压通过数据线输入。
目前 TFT 液晶显示器件基本上分辨率都能实现 1920 × 1080 ，甚至有的能达到 3840 × 2160 的分辨率。每个液晶显示器件上有几百万个像素和接近一万条数据线或者栅线。这么多线，不发生断线是很难做到的。所以在实际生产过程中，一般都会引入断线的修复流程。其中其修复方法的好坏，对于修复成功率有着很大的影响。
目前常用的修复方法是：采用 Laser CVD(chemical vapor deposition) 来修复。其原理是通过激光催化六羰基钨分解，钨金属沉积在基板表面，起到导体作用来实现的。修复方法包括：通过 Laser CVD 在断线的部位生长金属钨；通过 Laser Cut 把旁边的像素电极 ITO （ Indium Tin Oxides ）打断；通过激光熔融两个端点，让金属钨和绝缘膜下面的金属走线连接在一起。这种修复工艺对于一般的阵列基板而言比较适合。由于其各层膜厚都不是很高，一般 0.3~0.4um ，最厚的也一般不会超过 0.6um 。在修复时，这些不同厚度的膜厚造成的段差相对不大；所以金属钨在沉积的时候相对不容易断线，修复成功率也相对有保障。
然而，对于采用 COA（ Color Filter On Array ） 技术制成的 TFT-LCD 阵列基板而言，其中色层（ RGB 层）的膜厚都比较厚，达到 3um~5um ，这样按照上述方式进行断线修复时，其熔融的厚度较大，接触深度较深，沉积上的金属钨非常容易断线，导致修复成功率降低。
因此需要提供一种能够提高采用 COA 技术制成的 TFT-LCD 阵列基板的断线修复成功率的数据线断线修复方法。
发明内容
本发明的目的在于针对上述缺陷，提供一种 TFT-LCD 阵列基板，同时还提供一种能够提高该 TFT-LCD 阵列基板修复成功率的数据线断线修复方法。
本发明提供的一种 TFT-LCD 阵列基板，包括由下向上依次设置的第一金属层、第二金属层和透明电极层，所述第一金属层中形成有栅线和共通电极线，所述第二金属层中形成有数据线，所述透明电极层中形成有像素电极，所述栅线与数据线交叉形成像素区域，所述像素电极以及所述共通电极线装设于所述像素区域中，所述共通电极线包括相互连接的第一电极线和第二电极线，所述第二电极线与所述数据线在所述第二金属层上的投影相互平行，所述第一电极线与所述数据线在所述第二金属层上的投影相交。
上述的 TFT-LCD 阵列基板中，所述第一电极线为平行于所述栅线的整体结构，所述第二电极线为垂直于所述栅线的间断结构。
上述的 TFT-LCD 阵列基板中，所述第二电极线包括相互平行设置的第一第二电极线和第二子电极线，所述共通电极线为由所述第一子电极线、第二子电极线以及第一电极线相互连接构成的 H 型结构。
上述的 TFT-LCD 阵列基板，所述 TFT-LED 阵列基板还包括连接线，所述连接线与所述像素电极同层设置，所述连接线跨设在所述栅线上，所述连接线的一端与所述栅线一侧的第二子电极线连接，所述连接线的另一端与所述栅线另一侧的第二子电极线连接。
上述的 TFT-LCD 阵列基板中，分别位于每条所述栅线两侧的所述共通电极线通过所述连接线相互连通。
本发明还提供一种 TFT-LCD 阵列基板的数据线断线修复方法，包括：
S1 、查找出数据线的断点的位置；
S2 、采用激光焊接方法将所述断点两侧的数据线通过共通电极线连接起来；其中，所述共通电极线包括相互连接的第一电极线和第二电极线，所述第二电极线与所述数据线在所述第二金属层上的投影相互平行，所述第一电极线与所述数据线在所述第二金属层上的投影相交；采用激光切割方法断开所述断点所在像素区域中的共通电极线与相邻像素区域中的共通电极线的连接。
上述的数据线断线修复方法中，所述步骤 S2 包括：
S21 、 采用激光焊接方法将断点两侧的数据线分别与其在所述第二金属层上的投影相交的所述第一电极线熔接，在所述数据线与所述第一电极线的投影的交点处形成熔接点；
S22 、采用激光切割方法将所述熔接点相邻两侧的像素区域中的第一电极线切断从而断开所述断点所在像素区域中的共通电极线与相邻像素区域中的共通电极线的连接。
上 述的数据线断线修复方法，所述步骤 S2 包括：
S23 、断开的 所述数据线通过所述第一电极线、连接在所述第一电极线与另一所述第一电极线之间的并连通的第二电极线以及另一所述第一电极线连通。
上述的数据线断线修复方法中，所述步骤 S2 包括：
S21 、 采用激光焊接方法将断点两侧的数据线分别与其邻近的所述第二电极线熔接，在所述数据线与所述第二电极线之间形成熔接点；
S22 、 采用激光切割方法将所述熔接点相邻两侧的像素区域中的第一电极线切断从而断开所述断点所在像素区域中的共通电极线与相邻像素区域中的共通电极线的连接。
上述的数据线断线修复方法，所述步骤 S2 还包括：
S23 、断开的 所述数据线通过所述第二电极线连通。
本发明还提供一种 TFT-LCD 阵列基板的数据线断线修复方法，所述 TFT-LCD 阵列基板包括由下向上依次设置的第一金属层、第二金属层和透明电极层，所述第一金属层中形成有栅线和共通电极线，所述第二金属层中形成有数据线，所述透明电极层中形成有像素电极，所述栅线与数据线交叉形成像素区域，所述像素电极以及所述共通电极线装设于所述像素区域中，所述共通电极线包括相互连接的第一电极线和第二电极线，所述第二电极线与所述数据线在所述第二金属层上的投影相互平行，所述第一电极线与所述数据线在所述第二金属层上的投影相交；包括：
S1 、查找出所述数据线的断点的位置；
S2 、采用激光焊接方法将所述断点两侧的数据线通过所述共通电极线连接起来；采用激光切割方法断开所述断点所在像素区域中的共通电极线与相邻像素区域中的共通电极线的连接。
上述的数据线断线修复方法，所述步骤 S2 包括：
S21 、采用激光焊接方法将断点两侧的数据线分别与其在所述第二金属层上的投影相交的所述第一电极线熔接，在所述数据线与所述第一电极线的投影的交点处形成熔接点；
S22 、采用激光切割方法将所述熔接点相邻两侧的像素区域中的第一电极线切断从而断开所述断点所在像素区域中的共通电极线与相邻像素区域中的共通电极线的连接。
上 述的数据线断线修复方法，所述步骤 S2 还包括：
S23 、断开的 所述数据线通过所述第一电极线、连接在所述第一电极线与另一所述第一电极线之间的并连通的第二电极线以及另一所述第一电极线连通。
上述的数据线断线修复方法，所述步骤 S2 包括：
S21 、采用激光焊接方法将断点两侧的数据线分别与其邻近的所述第二电极线熔接，在所述数据线与所述第二电极线之间形成熔接点；
S22 、采用激光切割方法将所述熔接点相邻两侧的像素区域中的第一电极线切断从而断开所述断点所在像素区域中的共通电极线与相邻像素区域中的共通电极线的连接。
上述的数据线断线修复方法，所述步骤 S2 还包括：
S23 、断开的 所述数据线通过所述第二电极线连通。
实施本发明的有益效果在于：本发明通过将像素区域中的共通电极线作为修复数据线断点的联线，将其与数据线断点两侧的数据线熔接，同时断开断点所在像素区域中的共通电极线与相邻像素区域的共通电极线的连接，从而实现了数据线断点的修复。这种修复克服了传统修复方法上的段差问题，提高了修复成功率。
附图说明
下面将结合附图及实施例对本发明作进一步说明，附图中：
图 1 为本发明提供的 TFT-LCD 阵列基本的实施例的结构示意图；
图 2 为 本发明 TFT-LCD 阵列基板修复数据线断线的示意图；
图 3 为本发明 TFT-LCD 阵列基板修复数据断线的第二实施例示意图。
具体实施方式
下面通过附图和实施例，对本发明的技术方案做进一步的详细描述。
图 1 为本发明 TFT-LCD 阵列基板第一实施例的平面图，所反映的是四个像素区域的结构。本实施例 TFT-LCD 阵列基板的主体结构包括由下至上依次设置的基板（未示出）、第一金属层（未标号）、第二金属层（未标号）、透明电极层（未标号）、设置在该第一金属层与第二金属层之间的栅极绝缘层（未示出）、设置在第二金属层与透明电极层之间的钝化层（未示出）以及形成在钝化层与透明电极层之间的色层（ RGB 层）（未示出）。如图 1 所示，第一金属层上形成有栅线 2 和共通电极线（未标号）；第二金属层上形成有数据线 1 ，透明电极层上形成有像素电极 3 和薄膜晶体管（未示出）。栅线 1 和数据线 1 相互交叉形成了像素区域。薄膜晶体管和像素电极 3 装设在该像素区域内。栅线 2 用于向薄膜晶体管提供开启或关断信号，数据线 1 用于向像素电极 3 提供数据信号，共通电极线与像素电极 3 构成存储电容。
具体地，在基板上沉积第一金属层，该第一金属层可以采用钼、铝、铝镍合金、钼钨合金、铬或铜等金属的单层金属层，也可以采用上述单层金属层构成的多层复合层。采用掩模板对第一金属层进行构图，在基板上形成栅线 2 以及共通电极线的图形。在栅线 2 上设置有栅极（未示出）。共通电极线包括第一电极线 4 和第二电极线（未标号）。第一电极线 4 为平行于栅线 2 的整体结构，第二电极线为垂直于栅线 2 的间断结构且位于相邻的两条栅线 2 之间。第二电极线与数据线 1 在第二金属层上的投影相互平行，第一电极线 4 与数据线 1 在第二金属层上的投影相交。第二电极线包括相互平行设置的第一子电极线 5 和第二子电极线 6 。在每个像素区域中，共通电极线为由第一电极线 4 和第一子电极线 5 、第二子电极线 6 相互连接构成的 H 型结构。
在栅线 2 、共通电极线以及基板的表面上形成栅极绝缘层，栅极绝缘层为非晶硅膜层。
在栅极绝缘层的表面沉积第二金属层，采用光刻工艺在所述第二金属层内形成数据线 1 、源极（未示出）和漏极（未示出），所述数据线 1 与源极为一整体结构。在本实施例中，数据线 1 与第二电极线在第二金属层上的投影相平行，数据线 1 与第一电极线 4 在第二金属层上的投影相交。
在所述数据线 1 、源极、漏极和栅极绝缘层表面上形成钝化层，对所述钝化层进行刻蚀，形成接触孔（未示出）。具体地，采用化学气相淀积工艺在所述数据线 1 、共通电极线和栅极绝缘层表面上形成钝化层，之后，采用光刻工艺在所述钝化层内形成接触孔，所述接触孔位于漏极上方的钝化层内。
在所述钝化层表面上形成色层（ RGB 层）， RGB 层在钝化层上成膜后经曝光、显影，位于像素区域中。在本实施例中，由于透明电极层与第一金属层之间增加了 RGB 层，该 RGB 层的厚度在 3 μ m 到 5 μ m ，这样就增加了透明电极层与第一金属层之间的距离，从而使得两者之间形成的电容小，继而减小了 RC 延迟。
在所述 RGB 层表面上形成透明电极层，对所述透明电极层进行刻蚀，形成像素电极 3 、薄膜晶体管（未示出）。具体的，采用物理气相淀积工艺在所述 RGB 层表面上形成透明电极层，所述透明电极层为透明金属层，制作材料为氧化铟锡（ ITO ）。之后，采用光刻工艺在透明电极层上形成像素电极 3 ，所述像素电极 3 通过接触孔和漏极电连接。
在本实施例中，在透明电极层中还形成有连接线 7 。在同一列像素区域中每两个相邻的像素区域之间设置连接线 7 ，该连接线 7 跨设在位于该两个相邻的像素区域之间的栅线 2 上。连接线 7 的一端通过栅线 2 一侧的像素区域中的钝化层上的接触孔与该像素区域中的第二子电极线 6 相连接，连接线 7 的另一端通过栅线 2 另一侧的像素区域中的钝化层上的接触孔与该像素区域中的第二子电极线 6 相连接。位于栅线 2 两侧的第二子电极线 6 通过连接线 7 连接成整体，即位于同一列像素区域中相邻的两个像素区域中的共通电极线通过连接线 7 连接成网格式整体的共通电极线（ Mesh Com ）。这种 Mesh Com 可以使得位于栅线 2 两侧的共通电极线连通，从而使得 TFT-LCD 阵列基板上的位于不同像素区域中的共通电极线完全连通。由于连接线 7 采用氧化铟锡（ ITO ）制成，其为透明材料，这样就增大了该 TFT-LCD 阵列基板的透光率，而且也不会造成漏光。此外，第一金属层上共通电极线呈 H 型结构，通过还种结构及其上方的透明电极层的结构设计使得该 TFT-LCD 阵列基板的透光率增加。
图 3 为本发明 TFT-LCD 阵列基板修复数据线断线的示意图。如图 3 所示，查找出数据线 1 出现第一断点 41 的位置。首先通过激光焊接方法将数据线 1 第一断点 41 上侧的数据线 1 与其右侧相邻的第二子电极线 6 熔接，并在该第二子电极线 6 与数据线 1 之间形成第一熔接点 51 ；再将第一断点 41 下侧的数据线 1 与其右侧相邻的第二子电极线 6 熔接，并在该第二子电极线 6 与数据线 1 之间形成第二熔接点 52 。再采用切割方法将与第一熔接点 51 、第二熔接点 52 相邻两侧的像素区域中的第一电极线 4 切断，分别形成断开点 31 、 32 ，从而使第一断点 41 所在像素区域的共通电极线与相邻像素区域的共通电极线隔绝，保证栅线信号的传输。采用这种修复方式，通过第二子电极线 6 使所述数据线 1 重新连接起来。在本实施例中，第二子电极线 6 指一条电极线或为通过连接线 7 连通的两条第二子电极线 6 。
图 4 为本发明 TFT-LCD 阵列基板修复数据断线的第二实施例示意图。如图 4 所示，查找出数据线 1 出现第二断点 15 的位置。首先通过激光焊接方法将第二断点 15 上侧的数据线 1 与与其在第二金属层上投影相交的第一电极线 4 熔接，在两者投影的交点处形成第三熔接点 21 ；再将第二断点 15 下侧的数据线 1 与另一与其在第二金属层上投影相交的第一电极线 4 熔接，在两者投影的交点处形成第四熔接点 22 。采用激光切割方法将与第三熔接点 21 相邻两侧的像素区域中的第一电极线 4 打断，形成断开点 11 、 12 ，同时将第四熔接点 22 相邻两侧像素区域中的第一电极线 4 打断，形成断开点 13 、 14 ；从而使第二断点 15 所在像素区域的共通电极线与其他像素区域的共通电极线隔绝，保证栅线信号的传输。采用这种修复方式，通过一个像素区域中的第一电极线 4 及该像素区域中的第二子电极线 6 、连接线 7 以及另一个相邻像素区域中的第一电极线 4 及该区域中的第二子电极线 6 使数据线 1 重新连接起来。该两个像素区域中的第二子电极线 6 通过连接线 7 连通。
综上所述，本发明通过将像素区域中的共通电极线作为修复数据线断点的联线，将其与数据线断点两侧的数据线熔接，同时断开断点所在像素区域中的共通电极线与相邻像素区域的共通电极线的连接，从而实现了数据线断点的修复。这种修复克服了传统修复方法上的段差问题，提高了修复成功率。
应当理解的是，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，而所有这些改进和变换都应属于本发明所附权利要求的保护范围。

Claims (15)

  1. 一种 TFT-LCD 阵列基板，包括由下向上依次设置的第一金属层、第二金属层和透明电极层，所述第一金属层中形成有栅线和共通电极线，所述第二金属层中形成有数据线，所述透明电极层中形成有像素电极，所述栅线与数据线交叉形成像素区域，所述像素电极以及所述共通电极线装设于所述像素区域中，其中，所述共通电极线包括相互连接的第一电极线和第二电极线，所述第二电极线与所述数据线在所述第二金属层上的投影相互平行，所述第一电极线与所述数据线在所述第二金属层上的投影相交。
  2. 根据权利要求 1 所述的 TFT-LCD 阵列基板，其中，所述第一电极线为平行于所述栅线的整体结构，所述第二电极线为垂直于所述栅线的间断结构。
  3. 根据权利要求 2 所述的 TFT-LCD 阵列基板，其中，所述第二电极线包括相互平行设置的第一子电极线和第二子电极线，所述共通电极线为由所述第一子电极线、第二子电极线以及第一电极线相互连接构成的 H 型结构。
  4. 根据权利要求 3 所述的 TFT-LCD 阵列基板，其中，所述 TFT-LED 阵列基板还包括连接线，所述连接线与所述像素电极同层设置，所述连接线跨设在所述栅线上，所述连接线的一端与所述栅线一侧的第二子电极线连接，所述连接线的另一端与所述栅线另一侧的第二子电极线连接。
  5. 根据权利要求 4 所述的 TFT-LCD 阵列基板，其中，分别位于每条所述栅线两侧的所述共通电极线通过所述连接线相互连通。
  6. 一种 TFT-LCD 阵列基板的数据线断线修复方法，其中，包括：
    S1 、查找出数据线的断点的位置；
    S2 、采用激光焊接方法将所述断点两侧的数据线通过共通电极线连接起来；其中，所述共通电极线包括相互连接的第一电极线和第二电极线，所述第二电极线与所述数据线在所述第二金属层上的投影相互平行，所述第一电极线与所述数据线在所述第二金属层上的投影相交；采用激光切割方法断开所述断点所在像素区域中的共通电极线与相邻像素区域中的共通电极线的连接。
  7. 根据权利要求 6 所述的数据线断线修复方法，其中，所述步骤 S2 包括：
    S21 、采用激光焊接方法将断点两侧的数据线分别与其在所述第二金属层上的投影相交的所述第一电极线熔接，在所述数据线与所述第一电极线的投影的交点处形成熔接点；
    S22 、采用激光切割方法将所述熔接点相邻两侧的像素区域中的第一电极线切断从而断开所述断点所在像素区域中的共通电极线与相邻像素区域中的共通电极线的连接。
  8. 根据权利要求 7 所述的数据线断线修复方法，其中，所述步骤 S2 包括：
    S23 、断开的 所述数据线通过所述第一电极线、连接在所述第一电极线与另一所述第一电极线之间的并连通的第二电极线以及另一所述第一电极线连通。
  9. 根据权利要求 6 所述的数据线断线修复方法，其中，所述步骤 S2 包括：
    S21 、采用激光焊接方法将断点两侧的数据线分别与其邻近的所述第二电极线熔接，在所述数据线与所述第二电极线之间形成熔接点；
    S22 、采用激光切割方法将所述熔接点相邻两侧的像素区域中的第一电极线切断从而断开所述断点所在像素区域中的共通电极线与相邻像素区域中的共通电极线的连接。
  10. 根据权利要求 9 所述的数据线断线修复方法，其中，所述步骤 S2 还包括：
    S23 、断开的 所述数据线通过所述第二电极线连通。
  11. 一种 TFT-LCD 阵列基板的数据线断线修复方法，所述 TFT-LCD 阵列基板包括由下向上依次设置的第一金属层、第二金属层和透明电极层，所述第一金属层中形成有栅线和共通电极线，所述第二金属层中形成有数据线，所述透明电极层中形成有像素电极，所述栅线与数据线交叉形成像素区域，所述像素电极以及所述共通电极线装设于所述像素区域中，所述共通电极线包括相互连接的第一电极线和第二电极线，所述第二电极线与所述数据线在所述第二金属层上的投影相互平行，所述第一电极线与所述数据线在所述第二金属层上的投影相交；其中，所述数据线断线修复方法包括：
    S1 、查找出所述数据线的断点的位置；
    S2 、采用激光焊接方法将所述断点两侧的数据线通过所述共通电极线连接起来；采用激光切割方法断开所述断点所在像素区域中的共通电极线与相邻像素区域中的共通电极线的连接。
  12. 根据权利要求 11 所述的数据线断线修复方法，其中，所述步骤 S2 包括：
    S21 、采用激光焊接方法将断点两侧的数据线分别与其在所述第二金属层上的投影相交的所述第一电极线熔接，在所述数据线与所述第一电极线的投影的交点处形成熔接点；
    S22 、采用激光切割方法将所述熔接点相邻两侧的像素区域中的第一电极线切断从而断开所述断点所在像素区域中的共通电极线与相邻像素区域中的共通电极线的连接。
  13. 根据权利要求 12 所述的数据线断线修复方法，其中，所述步骤 S2 还包括：
    S23 、断开的 所述数据线通过所述第一电极线、连接在所述第一电极线与另一所述第一电极线之间的并连通的第二电极线以及另一所述第一电极线连通。
  14. 根据权利要求 11 所述的数据线断线修复方法，其中，所述步骤 S2 包括：
    S21 、采用激光焊接方法将断点两侧的数据线分别与其邻近的所述第二电极线熔接，在所述数据线与所述第二电极线之间形成熔接点；
    S22 、采用激光切割方法将所述熔接点相邻两侧的像素区域中的第一电极线切断从而断开所述断点所在像素区域中的共通电极线与相邻像素区域中的共通电极线的连接。
  15. 根据权利要求 14 所述的数据线断线修复方法，其中，所述步骤 S2 还包括：
    S23 、断开的 所述数据线通过所述第二电极线连通。
PCT/CN2014/070367 2013-12-30 2014-01-09 Tft-lcd阵列基板及其数据线断线的修复方法 Ceased WO2015100770A1 (zh)

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