WO2016183935A1 - 液晶面板的亮点修补方法、装置及亮点修补后的液晶面板 - Google Patents

液晶面板的亮点修补方法、装置及亮点修补后的液晶面板 Download PDF

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Publication number
WO2016183935A1
WO2016183935A1 PCT/CN2015/085393 CN2015085393W WO2016183935A1 WO 2016183935 A1 WO2016183935 A1 WO 2016183935A1 CN 2015085393 W CN2015085393 W CN 2015085393W WO 2016183935 A1 WO2016183935 A1 WO 2016183935A1
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Prior art keywords
electrode
pixel electrode
liquid crystal
data line
common electrode
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PCT/CN2015/085393
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English (en)
French (fr)
Inventor
范广宝
申智渊
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武汉华星光电技术有限公司
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Priority to US14/785,105 priority Critical patent/US10126617B2/en
Publication of WO2016183935A1 publication Critical patent/WO2016183935A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Definitions

  • the present invention relates to the field of liquid crystal display, and in particular to a bright spot repairing method and device for a liquid crystal panel and a liquid crystal panel after bright spot repair.
  • a flat panel display represented by a liquid crystal LCD and an organic light emitting diode (OLED) has been developed in the direction of large size and high resolution, and the thin film transistor TFT has been widely concerned as a core component of the flat panel display industry.
  • the process technology and the operation are included, and in the process, some particulate matter is inevitably generated, and some of the particles are washed away by the cleaning machine, but cannot be washed away.
  • Part of the particles may remain on the liquid crystal display panel, such as on the array substrate or the color filter substrate of the liquid crystal display panel. These residues remain on the liquid crystal display panel.
  • the particles After the liquid crystal panel is lit, the particles will also produce bright spots, bright lines, broken bright spots, and weak bright lines. The occurrence of these bright spots or bright lines will seriously affect the display of the liquid crystal display panel.
  • the highlight is absolutely impossible.
  • the display panel if the display panel has bright spots or bright lines, the product will be scrapped, which brings great problems to the manufacturer. loss. Therefore, after a bright spot or a bright line appears, a method is generally adopted to darken the bright spot or the bright line.
  • the metal layer between the pixel electrode and the common electrode is generally melted and sputtered to short the pixel electrode and the common electrode to realize bright spots or bright lines, but the above method is limited to It can be used only when the metal layer of the pixel electrode overlaps with the metal layer of the common electrode.
  • the new technology especially in the low-temperature polysilicon technology LTPS type TFT-LCD liquid crystal display panel, there is no overlapping area between the pixel electrode and the common electrode and the metal layer, as shown in FIG. 1, the pixel electrode 101 and the common There are no overlapping portions between the electrodes 102 and the metal layer. Therefore, the above methods of the prior art are no longer applicable.
  • the technical problem to be solved by the present invention is to provide a bright spot repairing method and device for a liquid crystal panel and a liquid crystal panel after bright spot repair, which can effectively reduce the scrap rate of the liquid crystal display panel and improve the product yield.
  • a technical solution adopted by the present invention is to provide a bright spot repairing method for a liquid crystal panel, including:
  • the first electrode at the pixel electrode and the data line bridge position is removed such that the data line stops inputting a voltage signal to the pixel electrode.
  • the bright spot repairing method further includes: depositing metal atoms between the pixel electrode and the common electrode to form a metal film, and short-circuiting the pixel electrode and the common electrode.
  • tungsten atoms are deposited between the pixel electrode and the common electrode to form a metal film, and the pixel electrode is short-circuited with the common electrode.
  • the step of removing the first electrode at the pixel electrode and the data line bridging position, so that the data line stops inputting the voltage signal to the pixel electrode specifically includes:
  • the first electrode at the bridge position of the pixel electrode and the data line is removed by a femtosecond laser fabrication process.
  • the step of depositing tungsten atoms between the pixel electrode and the common electrode to form a metal film, and short-circuiting the pixel electrode and the common electrode includes:
  • a tungsten atom is deposited between the pixel electrode and the common electrode by laser chemical vapor deposition to form a metal film, and the pixel electrode is short-circuited with the common electrode.
  • the step of removing the electrode at the bridge position of the pixel electrode and the data line to cause the data line to stop inputting the voltage signal to the pixel electrode further includes:
  • the insulating layer covered by the surface of the first electrode is removed.
  • the step of removing the insulating layer covered by the surface of the first electrode specifically includes:
  • the insulating layer covered by the surface of the first electrode is removed by a fabrication process of a femtosecond laser.
  • another technical solution adopted by the present invention is to provide a bright spot repairing device, including: removing a module,
  • the removing module is configured to remove the first electrode at the pixel electrode and the data line bridging position, so that the data line stops inputting a voltage signal to the pixel electrode.
  • the bright spot repairing device further includes a metal film forming module for depositing metal atoms between the pixel electrode and the common electrode to form a metal film, and shorting the pixel electrode to the common electrode .
  • the metal film forming module is configured to deposit tungsten atoms between the pixel electrode and the common electrode to form a metal film, and short the pixel electrode and the common electrode.
  • the metal film forming module forms a tungsten atom between the pixel electrode and the common electrode by laser chemical vapor deposition to form a metal film, so that the pixel electrode is short-circuited with the common electrode.
  • the removing module removes the first electrode at the pixel electrode and the data line bridging position by a femtosecond laser manufacturing process.
  • the removing module is further configured to remove the electrode covered by the first electrode surface before removing the electrode at the pixel electrode and the data line bridging position, before the data line stops inputting the voltage signal to the pixel electrode. Insulation.
  • the removing module removes the insulating layer covered by the surface of the first electrode by a manufacturing process of a femtosecond laser.
  • the liquid crystal panel includes an array substrate, and the array substrate includes a plurality of scanning lines and data lines insulated and insulated.
  • the array substrate includes at least one pixel region, and a pixel electrode of the pixel region is insulated from the scan line.
  • the pixel electrode and the common electrode are short-circuited by a metal film formed by depositing metal atoms between the pixel electrode and the common electrode.
  • the metal film is formed by depositing tungsten atoms between the pixel electrode and the common electrode.
  • the present invention removes the first electrode at the position where the pixel electrode and the data line are bridged, so that after the data line stops inputting the voltage signal to the pixel electrode, the voltage of the pixel electrode is zero.
  • the voltage difference formed by the pixel electrode corresponding to the common electrode is overcome, so that the liquid crystal molecules are not reversed again, and the bright spots are completely converted into dark spots, thereby effectively reducing the scrap rate of the liquid crystal display panel and improving the product yield.
  • FIG. 1 is a schematic cross-sectional structural view of a prior art display panel before repair
  • FIG. 2 is a schematic flow chart of an embodiment of a bright spot repairing method for a liquid crystal panel according to the present invention
  • FIG. 3 is a cross-sectional structural view showing an embodiment of the display panel after repair according to the present invention.
  • FIG. 4 is a cross-sectional structural view showing another embodiment of the display panel after repairing according to the present invention.
  • FIG. 5 is a schematic structural view of an embodiment of a bright spot repairing device for a liquid crystal panel.
  • FIG. 1 is a schematic flow chart of an embodiment of a method for repairing a bright spot of a liquid crystal panel according to the present invention.
  • the highlight repairing method of this embodiment includes the following steps:
  • the liquid crystal panel includes an array substrate and a color filter substrate, and liquid crystal molecules sandwiched between the array substrate and the color filter substrate, the array substrate includes a plurality of intersecting and insulated scanning lines and data lines, and the scanning lines and The plurality of pixel cells formed by the intersection of the data lines, wherein each of the pixel regions includes a pixel electrode, wherein the pixel electrode is connected to the data line through the bridged first electrode to obtain a data signal from the data driver through the data line.
  • the array substrate further includes a common electrode, and when a voltage is applied between the common electrode and the pixel electrode, the light and dark display of the liquid crystal panel is controlled by controlling a pressure difference between the pixel electrode and the common electrode.
  • the brightness and darkness of the liquid crystal panel may be controlled without being controlled by the normal pressure difference of the liquid crystal panel.
  • the core of the method is that the pressure difference between the pixel electrode and the common electrode that generate the bright spot is 0, the liquid crystal molecules are not deflected, and the abnormal bright spot is changed. Become a dark spot.
  • FIG. 3 is a schematic cross-sectional structural view of an embodiment of the display panel after repair according to the present invention.
  • the first electrode at the pixel electrode and the data line bridging position is removed, so that the data line stops inputting a voltage signal to the pixel electrode.
  • the first electrode electrically connected to the data line and the pixel electrode 301 to electrically conduct between the data line and the pixel electrode is removed, specifically, the pixel electrode 301 is connected to the data line.
  • the first electrode in the hole is removed by laser a hole slightly larger than the size of the first electrode structure, as indicated by the elliptical dotted line in FIG.
  • the connection between the data line and the pixel electrode is disconnected to stop the voltage input of the data line to the pixel electrode, and the voltage at the end of the pixel electrode 301 is zero.
  • a voltage difference is generated between the common electrode and the pixel electrode due to the input voltage of the common electrode terminal being stopped.
  • the voltage of the common electrode is generally between -0.2V and 0.2V, and the voltage difference of the liquid crystal molecules is about 1V. Therefore, the voltage difference between the common electrode and the pixel electrode is insufficient to deflect the liquid crystal molecules.
  • the abnormal bright spot becomes a dark spot.
  • the process of femtosecond laser is used to move Except the first electrode.
  • the femtosecond laser has high control precision and can precisely control the depth and width of the holes generated when the first electrode is removed, which can effectively protect other layer devices such as pixel electrodes from being affected.
  • the insulating layer covered by the surface of the first electrode is removed before removing the first electrode at the position where the pixel electrode and the data line are bridged.
  • the insulating layer is an insulating passivation layer of silicon nitride SiNx. In other embodiments, it may be replaced by other insulating layers of the same nature, such as amorphous silicon oxide SiOx, which is not limited herein.
  • the insulating layer covering the surface of the first electrode is removed by the manufacturing process of the femtosecond laser, and the removal can be accurately controlled. The depth and width of the insulation.
  • the patching method of the layout further includes step 102:
  • the data line is stopped to input a voltage signal to the pixel electrode, and metal atoms are deposited between the pixel electrode and the common electrode to be in the pixel electrode and the common electrode.
  • a metal layer is formed to short the pixel electrode to the common electrode.
  • a metal chemical film is formed by laser decomposition of a metal between a pixel electrode and a common electrode by a laser chemical weather deposition device, thereby forming a metal film, such as 403 in FIG. 4, connecting the pixel electrode 401 through the metal film 403, and a common
  • the electrode 402 realizes a short circuit between the pixel electrode 401 and the common electrode 402. After shorting, the voltage of the pixel electrode and the common electrode are the same, the pressure difference is 0, the liquid crystal molecules will not be deflected, and the bright spots are completely converted into dark spots.
  • the metal tungsten W is decomposed using a laser to form a W atom deposition, thereby forming a metal film to short the pixel electrode and the common electrode. It should be noted that, in other embodiments, other metals having the same properties as W may be substituted, and are not limited herein.
  • the first electrode at the position where the pixel electrode and the data line are bridged is removed, and after the data line stops inputting the voltage signal to the pixel electrode, the voltage of the pixel electrode is zero, which overcomes the common corresponding to the pixel electrode.
  • FIG. 5 is a schematic structural view of an embodiment of a bright spot repairing device for a liquid crystal panel according to the present invention.
  • the bright spot repairing device of the present embodiment includes a removing module 201,
  • the removing module 501 is configured to remove the first electrode at the pixel electrode and the data line bridging position, so that the data line stops inputting a voltage signal to the pixel electrode.
  • the bright spot repairing device overcomes the influence of the abnormal bright spot on the overall display of the liquid crystal panel, and the working principle is that the pressure difference between the pixel electrode and the common electrode that generates the bright spot is 0, and the liquid crystal molecules are not deflected, which is abnormal.
  • the highlight becomes a dark spot.
  • the removing module 501 removes the first electrode electrically connected to the data line and the pixel electrode, respectively, and turns on between the data line and the pixel electrode, specifically by laser at a portion where the pixel electrode is connected to the data line. a hole slightly larger than the size of the first electrode structure, removing the first electrode in the hole, disconnecting the data line from the pixel electrode, causing the data line to stop inputting a voltage signal to the pixel electrode, and the voltage at the pixel electrode end Is 0.
  • the data line stops inputting the voltage signal to the pixel electrode, and the voltage at the pixel electrode end is 0, a voltage difference is generated between the common electrode and the pixel electrode due to the input voltage of the common electrode terminal being stopped.
  • the voltage of the common electrode is generally between -0.2V and 0.2V, and the voltage difference of the liquid crystal molecules is about 1V. Therefore, the voltage difference between the common electrode and the pixel electrode is insufficient to deflect the liquid crystal molecules.
  • the abnormal bright spot becomes a dark spot.
  • the removal module 501 in the present embodiment passes the femtosecond laser.
  • a process is performed to remove the first electrode.
  • the femtosecond laser has high control precision and can precisely control the depth and width of the holes generated when the first electrode is removed, which can effectively protect other layer devices such as pixel electrodes from being affected.
  • the removing module 501 removes the first electrode surface covering before removing the first electrode at the pixel electrode and the data line bridging position.
  • the insulating layer is an insulating passivation layer of silicon nitride SiNx. In other embodiments, it may be replaced by other insulating layers of the same nature, such as amorphous silicon oxide SiOx, which is not limited herein.
  • the removing module 201 in the embodiment removes the insulating layer covering the surface of the first electrode by the manufacturing process of the femtosecond laser. Precise control to remove the depth and width of the insulation.
  • the repairing device of the mode further includes a metal film forming module 502.
  • the metal film forming module 202 is configured to deposit metal atoms between the pixel electrode and the common electrode to form a metal film, and the pixel electrode is short-circuited with the common electrode.
  • the present embodiment removing module 501 deposits a metal atom between the pixel electrode and the common electrode after the first electrode at the position where the pixel electrode and the data line bridge is removed, and the data line stops inputting the voltage signal to the pixel electrode.
  • a metal layer is formed between the pixel electrode and the common electrode to short the pixel electrode and the common electrode.
  • the metal film forming module 502 uses a laser chemical vapor deposition device to decompose a metal between the pixel electrode and the common electrode by using a laser to form a metal atom deposition, thereby forming a metal film, and connecting the pixel electrode and the common electrode through the metal film, thereby realizing A short between the pixel electrode and the common electrode.
  • the voltage of the pixel electrode and the common electrode are the same, the pressure difference is 0, the liquid crystal molecules will not be deflected, and the bright spots are completely converted into dark spots.
  • the metal film forming module 502 decomposes the metal tungsten W using a laser to form a W atom deposition, thereby forming a metal film to short the pixel electrode and the common electrode. It should be noted that, in other embodiments, other metals having the same properties as W may be substituted, and are not limited herein.
  • the removing module removes the first electrode at the position where the pixel electrode and the data line are bridged, so that after the data line stops inputting the voltage signal to the pixel electrode, the voltage of the pixel electrode is zero, and the pixel electrode is overcome.
  • the metal film forming module deposits tungsten atoms between the pixel electrode and the common electrode to form a metal film, so that the pixel electrode is short-circuited with the common electrode, which can not only overcome the formation of the common electrode and the pixel electrode.
  • the invention also provides a bright spot repaired liquid crystal panel comprising an array substrate and a color film substrate and liquid crystal molecules sandwiched between the array substrate and the color filter substrate, the array substrate comprising a plurality of two-two intersecting and insulating a scan line and a data line, and a plurality of pixel units formed by the intersection of the scan line and the data line, wherein each pixel area includes a pixel electrode, wherein the pixel electrode is connected to the data line through the bridged first electrode to pass data
  • the line gets the data signal from the data driver.
  • the array substrate further includes a common electrode, and when a voltage is applied between the common electrode and the pixel electrode, the light and dark display of the liquid crystal panel is controlled by controlling a pressure difference between the pixel electrode and the common electrode.
  • the array substrate further includes at least one pixel region, the pixel electrode of the pixel region being insulated from the scan line.
  • the bright spot can be turned into a dark spot within the rated voltage at which the liquid crystal molecules are deflected by the voltage of the common electrode, it is inevitable that a special case occurs, in order to minimize the probability of bright spots, in a preferred implementation.
  • the pixel electrode and the common electrode are short-circuited by a metal film, wherein the metal film is formed by depositing tungsten atoms.
  • the pixel electrode of the pixel region is insulated from the common electrode by the bright spot repairing method shown in any of the embodiments of FIG. 1 to FIG. 4 or by any of the bright spot repairing devices shown in FIG. 5, and the pixel electrode is implemented. Short circuit between common electrodes. I will not repeat them here.
  • the voltage of the pixel electrode is zero, overcoming the pressure difference formed by the pixel electrode corresponding to the common electrode, and then Depositing tungsten atoms between the pixel electrode and the common electrode to form a metal film, so that the pixel electrode is short-circuited with the common electrode, not only can overcome the pressure difference formed by the common electrode and the pixel electrode, but also the common electrode end and the pixel electrode end.
  • the voltage is equal, the pressure difference is permanently zero, the liquid crystal molecules will not turn off again, and the bright spots are completely converted into dark spots, which effectively reduces the scrap rate of the liquid crystal display panel and improves the product yield.

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Abstract

一种液晶面板的亮点修补方法，包括：移除像素电极（301）与数据线桥接位置处的第一电极，以使数据线停止对像素电极（301）输入电压信号。通过上述方式，能够将亮点完全转化为暗点，有效降低液晶显示面板的报废率，提高产品良率。还提供了一种液晶面板的亮点修补装置及亮点修补后的液晶面板。

Description

液晶面板的亮点修补方法、装置及亮点修补后的液晶面板
【技术领域】
本发明涉及液晶显示领域，特别是涉及一种液晶面板的亮点修补方法、装置及亮点修补后的液晶面板。
【背景技术】
伴随着液晶LCD以及有机发光二极管OLED为代表的平板显示器向着大尺寸、高分辨率的方向发展，薄膜晶体管TFT作为平板显示行业的核心部件，也得到广泛的关注。
在TFT-LCD液晶显示面板的制作过程中，包含有制程工艺以及运转，在这个过程中不可避免的会产生一些颗粒物particle，这些颗粒物中一部分会被清洗机台所清洗掉，然而不能被清洗掉的部分颗粒物则会残留于液晶显示面板上，如残留在液晶显示面板的阵列基板或彩膜基板上。这些残留于液晶显示面板上是颗粒物在液晶面板点亮后，也会产生亮点、亮线、碎亮点以及弱亮线等，而这些亮点或亮线的产生会严重影响液晶显示面板的显示。
为了保证液晶显示面板的品质以及人眼的感官，亮点是绝不可有的，在液晶显示面板制作工艺中，如果显示面板出现亮点或亮线，一般都会使产品报废，给厂商带来很大的损失。因此，在出现亮点或亮线后，一般都会采取方法将亮点或亮线暗点化。
现有技术中一般都是采用将像素电极与公共电极上之间的金属层采取融化溅镀，来使像素电极和公共电极短接，来实现亮点或亮线暗点化，但是上述方法仅限于像素电极的金属层与公共电极的金属层有重叠的部分时才能使用。而在采用新技术以后，特别是低温多晶硅技术LTPS类型的TFT-LCD液晶显示面板中，像素电极与公共电极以及金属层之间不存在任何重叠区域，如图1所示，像素电极101与公共电极102之间以及金属层无任何重叠的部分。因此，现有技术的上述方法不再适用。
【发明内容】
本发明主要解决的技术问题是提供一种液晶面板的亮点修补方法、装置及亮点修补后的液晶面板，能够有效降低液晶显示面板的报废率，提高产品良率。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种液晶面板的亮点修补方法，包括：
移除像素电极与数据线桥接位置处的第一电极，以使所述数据线停止对所述像素电极输入电压信号。
其中，所述亮点修补方法还包括：在所述像素电极与公共电极之间沉积金属原子，形成金属膜，使所述像素电极与所述公共电极短接。
其中，在所述像素电极与公共电极之间沉积钨原子，形成金属膜，使所述像素电极与所述公共电极短接。
其中，所述移除像素电极与数据线桥接位置处的第一电极，以使所述数据线停止对所述像素电极输入电压信号的步骤具体包括：
通过飞秒激光的制作工艺移除像素电极与数据线桥接位置处的第一电极。
其中，所述在所述像素电极与公共电极之间沉积钨原子，形成金属膜，使所述像素电极与所述公共电极短接的步骤具体包括：
利用激光化学气相沉积的方式在所述像素电极与所述公共电极之间形成沉积钨原子，形成金属膜，使所述像素电极与所述公共电极短接。
其中，所述移除像素电极与数据线桥接位置处的电极，以使所述数据线停止对所述像素电极输入电压信号的步骤之前还包括：
移除所述第一电极表面覆盖的绝缘层。
其中，所述移除所述第一电极表面覆盖的绝缘层的步骤具体包括：
通过飞秒激光的制作工艺移除所述第一电极表面覆盖的绝缘层。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种亮点修补装置，包括：移除模块，
所述移除模块用于移除像素电极与数据线桥接位置处的第一电极，以使所述数据线停止对所述像素电极输入电压信号。
所述亮点修补装置还包括金属膜形成模块，所述金属膜形成模块用于在所述像素电极与公共电极之间沉积金属原子，形成金属膜，使所述像素电极与所述公共电极短接。
其中，所述金属膜形成模块用于在所述像素电极与公共电极之间沉积钨原子，形成金属膜，使所述像素电极与所述公共电极短接。
其中，所述金属膜形成模块利用激光化学气相沉积的方式在所述像素电极与所述公共电极之间形成沉积钨原子，形成金属膜，使所述像素电极与所述公共电极短接。
其中，所述移除模块通过飞秒激光的制作工艺移除像素电极与数据线桥接位置处的第一电极。
其中，所述移除模块还用于在移除像素电极与数据线桥接位置处的电极，使所述数据线停止对所述像素电极输入电压信号之前，移除所述第一电极表面覆盖的绝缘层。
其中，所述移除模块通过飞秒激光的制作工艺移除所述第一电极表面覆盖的绝缘层。
为解决上述技术问题，本发明采用的再一个技术方案是：提供一种液晶面板，所述液晶面板包括阵列基板，所述阵列基板包括多条两两绝缘相交且绝缘的扫描线和数据线，所述阵列基板包括至少一个像素区域，所述像素区域的像素电极与所述扫描线绝缘。
其中，所述像素电极与所述公共电极之间通过一层金属膜而短接，其中，所述金属膜通过在像素电极与公共电极之间沉积金属原子而形成。
其中，所述金属膜通过在像素电极与公共电极之间沉积钨原子而形成。
本发明的有益效果是：区别于现有技术的情况，本发明移除像素电极与数据线桥接位置处的第一电极，使数据线停止对像素电极输入电压信号后，像素电极的电压为零，克服了像素电极相对应公共电极形成的压差，使液晶分子也不会再发生转偏，亮点完全转化为暗点，有效降低液晶显示面板的报废率，提高产品良率。
【附图说明】
图1是现有技术显示面板修补前的剖面结构示意图；
图2是本发明液晶面板的亮点修补方法一实施方式的流程示意图；
图3是本发明显示面板修补后的一实施方式的剖面结构示意图；
图4是本发明显示面板修补后的另一实施方式的剖面结构示意图；
图5是液晶面板的亮点修补装置一实施方式的结构示意图。
【具体实施方式】
参阅图1，图1是本发明液晶面板的亮点修补方法一实施方式的流程示意图。本实施方式的亮点修补方法包括如下步骤：
101：移除像素电极与数据线桥接位置处的第一电极，以使所述数据线停止对所述像素电极输入电压信号。
液晶面板包括阵列基板和彩膜基板以及夹持在所示阵列基板和彩膜基板之间的液晶分子，阵列基板包括多条两两相交且绝缘的扫面线和数据线，以及由扫描线和数据线相交形成的多个像素单元，其中，每个像素区域包括像素电极，其中像素电极通过桥接的第一电极与数据线连接，以通过数据线从数据驱动器得到数据信号。阵列基板还包括公共电极，当在公共电极与像素电极之间添加电压，通过控制像素电极与公共电极之间的压差来控制液晶面板的明暗显示。
但是由于在制造工艺中会可能会出现一些不可避免的异常亮点，即不受液晶面板正常压差的控制而实现明暗的变化。
本实施方式中为了克服上述非正常亮点对液晶面板整体显示的影响，方法的核心在于使产生亮点的像素电极与公共电极之间的压差为0，液晶分子不发生偏转，将非正常亮点变成暗点。
参阅图3，图3是本发明显示面板修补后的一实施方式的剖面结构示意图。移除像素电极与数据线桥接位置处的第一电极，使数据线停止对像素电极输入电压信号。如图3，对比图1所示，移除分别与数据线和像素电极301电连接，使数据线与像素电极之间导通的第一电极，具体地，在像素电极301与数据线连接的部位，通过激光打一个略大于第一电极结构大小的孔洞，移除处于所述孔洞中的第一电极，如如图3中椭圆虚线框中所标注的部分。断开数据线与像素电极之间的连接，以停止数据线对像素电极的电压输入，像素电极301端的电压为0。在数据线停止对像素电极输入电压信号，像素电极端的电压为0后，由于公共电极端的输入电压并为停止供电，此时公共电极与像素电极之间会产生压差。在正常情况下，公共电极的电压一般在-0.2V~0.2V之间，而液晶分子发生偏转的压差在1V左右，因此，公共电极与像素电极之间的电压差不足使液晶分子发生偏转，非正常亮点变成暗点。
由于阵列基板的结构较为复杂紧凑，在移除第一电极的过程中，为了能精确控制移除第一电极制作工艺中对其他层的损害，本实施方式中通过飞秒激光的制作工艺来移除第一电极。飞秒激光的控制精度高，能精准控制移除第一电极时所产生的孔洞的深度和宽度，能够有效保护其他层器件如像素电极不受影响。
在另一个实施方式中，由于第一电极的表面及四周覆盖有绝缘层，因此，在移除像素电极与数据线桥接位置处的第一电极前先移除第一电极表面覆盖的绝缘层，一般条件下，上述绝缘层为绝缘钝化层氮化硅SiNx，在其他实施方式中，也可以通过其他相同性质的绝缘层代替，如非晶氧化硅SiOx，在此不作限制。为了保证绝缘层覆盖的器件如第一电极以及绝缘层周围的器件不受损坏，本实施方式中通过飞秒激光的制作工艺来移除覆盖在第一电极表面的绝缘层，能够精准控制移除绝缘层的深度和宽度。
尽管在将公共电极的电压控制在液晶分子发生偏转的额定电压以内可以将亮点转为暗点，但是不可避免的会出现特殊的情况，为了将亮点的概率减小到最小，本实施方式的液晶版面的修补方法还包括步骤102：
102：在所述像素电极与公共电极之间沉积金属原子，形成金属膜，使所述像素电极与所述公共电极短接。
本实施方式在移除像素电极与数据线桥接位置处的第一电极使数据线停止对像素电极输入电压信号后，在像素电极与公共电极之间沉积金属原子，以在像素电极与公共电极之间形成金属层，使像素电极与公共电极短接。
具体地，通过激光化学气象沉积设备，在像素电极与公共电极之间利用激光分解金属，形成金属原子沉积，从而形成金属膜，如图4中的403，通过金属膜403连接像素电极401以及公共电极402，即实现像素电极401与公共电极402之间的短接。短接后，像素电极和公共电极电压相同，压差为0，液晶分子将不会偏转，亮点完全转化为暗点。
在一个优选的实施方式中，使用激光分解金属钨W，形成W原子沉积，从而形成金属膜使像素电极和公共电极之间短接。需要说明的是，在其他实施方式中，也可以通过其他具有与W相同性质的金属进行替代，在此不再限定。
区别于现有技术，本实施方式移除像素电极与数据线桥接位置处的第一电极，使数据线停止对像素电极输入电压信号后，像素电极的电压为零，克服了像素电极相对应公共电极形成的压差，然后在像素电极与公共电极之间沉积钨原子，形成金属膜，使像素电极与所述公共电极短接，不仅能克服公共电极相对与像素电极形成的压差，而且使公共电极端和像素电极端的电压相等，压差永久保持为零，液晶分子也不会再发生转偏，亮点完全转化为暗点，有效降低液晶显示面板的报废率，提高产品良率。
参阅图5，图5是本发明液晶面板的亮点修补装置一实施方式的结构示意图。本实施方式的亮点修补装置包括移除模块201，
移除模块501用于移除像素电极与数据线桥接位置处的第一电极，以使所述数据线停止对所述像素电极输入电压信号。
由于在制造工艺中会可能会出现一些不可避免的异常亮点，即不受液晶面板正常压差的控制而实现明暗的变化。
本实施方式中亮点修补装置为了克服上述非正常亮点对液晶面板整体显示的影响，工作原理在于使产生亮点的像素电极与公共电极之间的压差为0，液晶分子不发生偏转，将非正常亮点变成暗点。
具体地，移除模块501移除分别与数据线和像素电极电连接，使数据线与像素电极之间导通的第一电极，具体通过在像素电极与数据线连接的部位，通过激光打一个略大于第一电极结构大小的孔洞，移除处于所述孔洞中的第一电极，断开数据线与像素电极之间的连接，使数据线停止对像素电极输入电压信号，像素电极端的电压为0。
在数据线停止对像素电极输入电压信号，像素电极端的电压为0后，由于公共电极端的输入电压并为停止供电，此时公共电极与像素电极之间会产生压差。在正常情况下，公共电极的电压一般在-0.2V~0.2V之间，而液晶分子发生偏转的压差在1V左右，因此，公共电极与像素电极之间的电压差不足使液晶分子发生偏转，非正常亮点变成暗点。
由于阵列基板的结构较为复杂紧凑，在移除第一电极的步骤中，为了能精确控制移除第一电极制作工艺中对其他层的损害，本实施方式中移除模块501通过飞秒激光的制作工艺来移除第一电极。飞秒激光的控制精度高，能精准控制移除第一电极时所产生的孔洞的深度和宽度，能够有效保护其他层器件如像素电极不受影响。
在另一个实施方式中，由于第一电极的表面及四周覆盖有绝缘层，因此，移除模块501在移除像素电极与数据线桥接位置处的第一电极前先移除第一电极表面覆盖的绝缘层，一般条件下，上述绝缘层为绝缘钝化层氮化硅SiNx，在其他实施方式中，也可以通过其他相同性质的绝缘层代替，如非晶氧化硅SiOx，在此不作限制。为了保证绝缘层覆盖的器件如第一电极以及绝缘层周围的器件不受损坏，本实施方式中移除模块201通过飞秒激光的制作工艺来移除覆盖在第一电极表面的绝缘层，能够精准控制移除绝缘层的深度和宽度。
尽管亮点修补装置在将公共电极的电压控制在液晶分子发生偏转的额定电压以内可以将亮点转为暗点，但是不可避免的会出现特殊的情况，为了将亮点的概率减小到最小，本实施方式的修补装置还包括金属膜形成模块502,。
金属膜形成模块202用于在所述像素电极与公共电极之间沉积金属原子，形成金属膜，使所述像素电极与所述公共电极短接。
本实施方式移除模块501在移除像素电极与数据线桥接位置处的第一电极使数据线停止对像素电极输入电压信号后，金属膜形成模块502在像素电极与公共电极之间沉积金属原子，以在像素电极与公共电极之间形成金属层，使像素电极与公共电极短接。
具体地，金属膜形成模块502通过激光化学气象沉积设备，在像素电极与公共电极之间利用激光分解金属，形成金属原子沉积，从而形成金属膜，通过金属膜连接像素电极以及公共电极，即实现像素电极与公共电极之间的短接。短接后，像素电极和公共电极电压相同，压差为0，液晶分子将不会偏转，亮点完全转化为暗点。
在一个优选的实施方式中，金属膜形成模块502使用激光分解金属钨W，形成W原子沉积，从而形成金属膜使像素电极和公共电极之间短接。需要说明的是，在其他实施方式中，也可以通过其他具有与W相同性质的金属进行替代，在此不再限定。
区别于现有技术，本实施方式移除模块移除像素电极与数据线桥接位置处的第一电极，使数据线停止对像素电极输入电压信号后，像素电极的电压为零，克服了像素电极相对应公共电极形成的压差，金属膜形成模块在像素电极与公共电极之间沉积钨原子，形成金属膜，使像素电极与所述公共电极短接，不仅能克服公共电极相对与像素电极形成的压差，而且使公共电极端和像素电极端的电压相等，压差永久保持为零，液晶分子也不会再发生转偏，亮点完全转化为暗点，有效降低液晶显示面板的报废率，提高产品良率。
本发明还提供一种亮点修补后的液晶面板，液晶面板包括阵列基板和彩膜基板以及夹持在所示阵列基板和彩膜基板之间的液晶分子，阵列基板包括多条两两相交且绝缘的扫面线和数据线，以及由扫描线和数据线相交形成的多个像素单元，其中，每个像素区域包括像素电极，其中像素电极通过桥接的第一电极与数据线连接，以通过数据线从数据驱动器得到数据信号。阵列基板还包括公共电极，当在公共电极与像素电极之间添加电压，通过控制像素电极与公共电极之间的压差来控制液晶面板的明暗显示。
阵列基板还包括至少一个像素区域，所述像素区域的像素电极与所述扫描线绝缘。
尽管在将公共电极的电压控制在液晶分子发生偏转的额定电压以内可以将亮点转为暗点，但是不可避免的会出现特殊的情况，为了将亮点的概率减小到最小，在一个优选的实施方式中，所述像素电极与公共电极之间通过金属膜相短接，其中，所述金属膜是钨原子沉积而形成的。
其中，所述像素区域的像素电极通过图1-图4任意实施方式所示的亮点修补方法中或通过图5所示的亮点修补装置任意实施方式实现与公共电极的绝缘，以及实现像素电极与公共电极之间的短接。在此不再赘述。
通过移除像素电极与数据线桥接位置处的第一电极，使数据线停止对像素电极输入电压信号后，像素电极的电压为零，克服了像素电极相对应公共电极形成的压差，再在像素电极与公共电极之间沉积钨原子，形成金属膜，使像素电极与所述公共电极短接，不仅能克服公共电极相对与像素电极形成的压差，而且使公共电极端和像素电极端的电压相等，压差永久保持为零，液晶分子也不会再发生转偏，亮点完全转化为暗点，有效降低液晶显示面板的报废率，提高了产品良率。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (17)

  1. 一种液晶面板的亮点修补方法，其中，包括：
    移除像素电极与数据线桥接位置处的第一电极，以使所述数据线停止对所述像素电极输入电压信号。
  2. 根据权利要求1所述的方法，其中，所述亮点修补方法还包括：在所述像素电极与公共电极之间沉积金属原子，形成金属膜，使所述像素电极与所述公共电极短接。
  3. 根据权利要求2所述的方法，其中，在所述像素电极与公共电极之间沉积钨原子，形成金属膜，使所述像素电极与所述公共电极短接。
  4. 根据权利要求1所述的方法，其中，所述移除像素电极与数据线桥接位置处的第一电极，以使所述数据线停止对所述像素电极输入电压信号的步骤具体包括：
    通过飞秒激光的制作工艺移除像素电极与数据线桥接位置处的第一电极。
  5. 根据权利要求3所述的方法，其中，所述在所述像素电极与公共电极之间沉积钨原子，形成金属膜，使所述像素电极与所述公共电极短接的步骤具体包括：
    利用激光化学气相沉积的方式在所述像素电极与所述公共电极之间形成沉积钨原子，形成金属膜，使所述像素电极与所述公共电极短接。
  6. 根据权利要求1所述的方法，其中，所述移除像素电极与数据线桥接位置处的电极，以使所述数据线停止对所述像素电极输入电压信号的步骤之前还包括：
    移除所述第一电极表面覆盖的绝缘层。
  7. 根据权利要求6所述的方法，其中，所述移除所述第一电极表面覆盖的绝缘层的步骤具体包括：
    通过飞秒激光的制作工艺移除所述第一电极表面覆盖的绝缘层。
  8. 一种液晶面板的亮点修补装置，其中，包括：移除模块，
    所述移除模块用于移除像素电极与数据线桥接位置处的第一电极，以使所述数据线停止对所述像素电极输入电压信号。
  9. 根据权利要求8所述的装置，其中，所述亮点修补装置还包括金属膜形成模块，所述金属膜形成模块用于在所述像素电极与公共电极之间沉积金属原子，形成金属膜，使所述像素电极与所述公共电极短接。
  10. 根据权利要求9所述的装置，其中，所述金属膜形成模块用于在所述像素电极与公共电极之间沉积钨原子，形成金属膜，使所述像素电极与所述公共电极短接。
  11. 根据权利要求10所述的装置，其中，所述金属膜形成模块利用激光化学气相沉积的方式在所述像素电极与所述公共电极之间形成沉积钨原子，形成金属膜，使所述像素电极与所述公共电极短接。
  12. 根据权利要求8所述的装置，其中，所述移除模块通过飞秒激光的制作工艺移除像素电极与数据线桥接位置处的第一电极。
  13. 根据权利要求8所述的装置，其中，所述移除模块还用于在移除像素电极与数据线桥接位置处的电极，使所述数据线停止对所述像素电极输入电压信号之前，移除所述第一电极表面覆盖的绝缘层。
  14. 根据权利要求13所述装置，其中，所述移除模块通过飞秒激光的制作工艺移除所述第一电极表面覆盖的绝缘层。
  15. 一种亮点修补后的液晶面板，所述液晶面板包括阵列基板，所述阵列基板包括多条两两绝缘相交且绝缘的扫描线和数据线，其中，所述阵列基板包括至少一个像素区域，所述像素区域的像素电极与所述扫描线绝缘。
  16. 根据权利要求15所述的液晶面板，其中，所述像素电极与所述公共电极之间通过一层金属膜而短接，其中，所述金属膜通过在像素电极与公共电极之间沉积金属原子而形成。
  17. 根据权利要求16所述的液晶面板，其中，所述金属膜通过在像素电极与公共电极之间沉积钨原子而形成。
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