WO2015087636A1 - 放射線検出装置、放射線検出システム、及び、放射線検出装置の製造方法 - Google Patents

放射線検出装置、放射線検出システム、及び、放射線検出装置の製造方法 Download PDF

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Publication number
WO2015087636A1
WO2015087636A1 PCT/JP2014/078874 JP2014078874W WO2015087636A1 WO 2015087636 A1 WO2015087636 A1 WO 2015087636A1 JP 2014078874 W JP2014078874 W JP 2014078874W WO 2015087636 A1 WO2015087636 A1 WO 2015087636A1
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WO
WIPO (PCT)
Prior art keywords
sensor substrates
radiation detection
detection apparatus
sensor
adhesive member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2014/078874
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English (en)
French (fr)
Japanese (ja)
Inventor
伸二 小野
石井　孝昌
航太 西部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to CN201811096760.1A priority Critical patent/CN109239761B/zh
Priority to CN201480068223.XA priority patent/CN105829916B/zh
Priority to GB1612140.2A priority patent/GB2536394B/en
Priority to DE112014005663.4T priority patent/DE112014005663B4/de
Priority to KR1020167017969A priority patent/KR101818874B1/ko
Priority to CN201910219458.9A priority patent/CN110045410B/zh
Priority to US15/103,247 priority patent/US20160291172A1/en
Publication of WO2015087636A1 publication Critical patent/WO2015087636A1/ja
Anticipated expiration legal-status Critical
Priority to US16/794,731 priority patent/US11226419B2/en
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/46—Arrangements for interfacing with the operator or the patient
    • A61B6/461—Displaying means of special interest
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/48—Diagnostic techniques
    • A61B6/486—Diagnostic techniques involving generating temporal series of image data
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2002—Optical details, e.g. reflecting or diffusing layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20185—Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members

Definitions

  • the present invention relates to a radiation detection device for detecting radiation, a radiation detection system using the radiation detection device, and a method for manufacturing the radiation detection device.
  • the radiation detection device includes a so-called indirect conversion type radiation detection device including a sensor substrate in which a plurality of photoelectric conversion elements are arranged in an array and a scintillator that converts radiation into light that can be sensed by the photoelectric conversion elements. Can be used.
  • Patent Document 1 discloses a radiation detection apparatus in which a plurality of sensor substrates are arranged adjacent to each other and a scintillator is arranged across the plurality of sensor boards in order to provide a large-area radiation detection apparatus.
  • Patent Document 1 discloses a radiation detection apparatus in which a plurality of sensor substrates and a scintillator are bonded by an adhesive member.
  • an object of the present invention is to provide a radiation detection device in which poor adhesion between the end portions of a plurality of sensor substrates and an adhesive member is suppressed.
  • Each of the radiation detection apparatuses includes a first surface on which a plurality of photoelectric conversion elements are arranged in an array, a second surface facing the first surface, the first surface, and the second surface.
  • a plurality of sensor substrates disposed adjacent to each other, a scintillator disposed on the first surface side of the plurality of sensor substrates, and the plurality of sensor substrates and the scintillator are bonded to each other.
  • a sheet-like adhesive member, and the sheet-like adhesive member continuously bonds between the first surface and at least a part of the side surface between the plurality of sensor substrates. Thus, it adheres to at least a part of the first surface and the side surface.
  • light includes visible light and infrared rays
  • radiation includes X-rays, ⁇ rays, ⁇ rays, and ⁇ rays.
  • FIG. 1A is a schematic plan view for explaining the radiation detection apparatus 100
  • FIG. 1B is a schematic cross-sectional view for explaining a cross-sectional structure taken along the line AA ′ in FIG.
  • FIG. 1C is a schematic cross-sectional view enlarging the region B in FIG.
  • the radiation detection apparatus 100 of the present embodiment includes a plurality of sensor substrates 112, a scintillator 120, and an adhesive member 130.
  • Each of the plurality of sensor substrates 112 includes a first surface 112a in which a plurality of photoelectric conversion elements 115 are arranged in an array, a second surface 112b facing the first surface 112a, a first surface 112a, and a first surface.
  • the side surface 112c is connected to the two surfaces 112b.
  • the plurality of sensor substrates 112 are disposed adjacent to each other.
  • the scintillator 120 is disposed on the first surface side of the plurality of sensor substrates 112.
  • the bonding member 130 bonds the plurality of sensor substrates 112 and the scintillator 120 on the first surface side of the plurality of sensor substrates 112.
  • the sheet-like adhesive member 130 is formed between the first surface 112a and the side surface 112c so as to continuously adhere between the plurality of sensor substrates 112 across the first surface 112a and at least a part of the side surface 112c. Adhered to at least a part.
  • the bonding member 130 bonds the plurality of sensor substrates 112 and the scintillator 120 and extends from the first surface 112a of the sensor substrate 112 to at least a part of the side surface 112c.
  • the sensor substrate 112 has a plurality of photoelectric conversion elements 115 arranged in an array on the first surface 112a.
  • a single crystal silicon substrate manufactured from a single crystal silicon wafer is used for the sensor substrate 112, and a photodiode is used for the photoelectric conversion element 115.
  • the sensor substrate 112 may be provided with a plurality of switch elements (not shown) corresponding to the plurality of photoelectric conversion elements 115.
  • the sensor substrate 112 of the present invention is not limited to the above, and a sensor substrate having a pixel composed of a PIN-type or MIS-type sensor using amorphous silicon or the like deposited on an insulating substrate and TFTs. May be used.
  • the sensor substrate 112 of this embodiment further includes a guard ring 118, a passivation film 116, and a protective layer 117.
  • the guard ring 118 is a conductor provided for preventing electrostatic breakdown of the photoelectric conversion element 115, and is disposed on at least a part of the periphery of the plurality of photoelectric conversion elements 115 on the first surface 112a.
  • the passivation film 116 is an insulating film that covers the photoelectric conversion element 115, and an inorganic insulating film such as silicon oxide or silicon nitride is preferably used to cover a part of the guard ring 118 and the plurality of photoelectric conversion elements 115.
  • the protective layer 117 is a layer for protecting the photoelectric conversion element 115 and the passivation film 116 from an external impact or the like, and an organic insulating layer such as polyimide is preferably used, and the passivation film 116 except for the end portion of the passivation film 116 is used.
  • the membrane 116 is covered.
  • the scintillator 120 converts X-rays that are radiation transmitted through the subject into light having a wavelength that can be sensed by the photoelectric conversion element 115 of the sensor substrate 112.
  • the scintillator 120 of this embodiment includes a base material 121, a scintillator layer 122, and a scintillator protective layer 123.
  • As the base material 121 aC, Al, resin, or the like can be used, but Al having rigidity lower than that of aC can be preferably used.
  • the scintillator layer 122 is a layer that converts X-rays into light having a wavelength that can be sensed by the photoelectric conversion element 115, and GOS or CsI: Tl may be used.
  • GOS is Gd 2 O 2 S: Tb (terbium-added gadolinium oxysulfide) and includes a granular scintillator material.
  • the scintillator protection layer 123 is a layer that protects the scintillator layer 122 from external moisture and impact, and organic resins such as polyparaxylylene and hot melt resin can be suitably used. In FIG. 1B, the protective layer 123 is omitted for simplification of the drawing.
  • the bonding member 130 bonds the plurality of sensor substrates 112 and the scintillator 120 on the first surface side of the plurality of sensor substrates 112.
  • the adhesive member 130 is at least part of the first surface 112a and the side surface 112c so as to continuously adhere between the plurality of sensor substrates 112 across at least part of the side surface 112c from the first surface 112a. It is adhered to.
  • the adhesive member 130 includes at least a part of the protective layer 117, the passivation film 116, the guard ring 118, the first surface 112 a of the sensor substrate 112, and the side surface 112 c of the sensor substrate 112 between the plurality of sensor substrates 112. It is continuously bonded across.
  • the sheet-like adhesive member 130 is continuously bonded to the structure having a stepped shape on the surface, whereby the adhesive member 130 is more preferably bonded to the sensor substrate 112.
  • the adhesive member 130 is preferably made of a material having high light transmittance with respect to the light converted by the scintillator 122.
  • a sheet-like member made of an acrylic resin sheet, a silicon resin sheet, a hot melt resin sheet, or the like. can be suitably used.
  • the adhesive member 130 has an adhesive strength to glass of 10 N / 25 mm or more under a condition of a peeling angle of 180 ° in accordance with JIS standard Z0237, a transmittance of 90% or more for the maximum emission wavelength of the scintillator, and a thickness of 1 ⁇ m or more and 50 ⁇ m or less.
  • Organic resins are preferred.
  • the base 111 is a member that mechanically supports the plurality of sensor substrates 112, and a glass substrate, a SUS substrate, or the like that has higher rigidity than the base material 121 and the scintillator layer 122 can be suitably used.
  • the fixing member 113 is an adhesive member for fixing the plurality of sensor substrates 112 to the base 111, and the same material as that of the adhesive member 130 can be used.
  • the wiring board 114 is a wiring board for transmitting signals between the sensor board 112 and an external circuit (not shown), and a flexible printed wiring board can be suitably used.
  • FIG. 2A is a schematic cross-sectional view illustrating a cross-sectional configuration before a bonding process at a position corresponding to the AA ′ position in FIG. 1A
  • FIG. 2B is an example of the bonding process.
  • FIG.2 (c) is a cross-sectional schematic diagram explaining the example of another adhesion process.
  • the protective layer 123 is omitted for simplification of the drawing.
  • a plurality of sensor substrates 112 are fixed on the base material 111 by a fixing step of fixing the second surfaces 112 b of the plurality of sensor substrates 112 to the base 111 using the fixing member 113. Is placed. Further, the scintillator 120 having the scintillator layer 122 provided on the base material 121 is disposed on the first surface side of the plurality of sensor substrates 112 via the adhesive member 130, so that the surface 112 a of the plurality of sensor substrates 112 is formed. A scintillator layer 122 is disposed thereon.
  • a corresponding region between the plurality of sensor substrates 112 of the scintillator 120 is pressurized from the side opposite to the plurality of sensor substrates 112.
  • a roller 150 that can be rotated is used so that the adhesive member 130 is linearly pressed along the opposite sides of the sensor substrate 112 from the side opposite to the plurality of sensor substrates 112. Pressurize.
  • the pressure applied by the roller 150 is preferably 0.4 MPa or more.
  • a corresponding region between the plurality of sensor substrates 112 of the scintillator 120 is formed using a pressure-bonding structure 151 capable of adjusting the temperature.
  • the pressure may be applied from the side opposite to the plurality of sensor substrates 112.
  • the hot-melt resin is heated to the melting temperature or higher by the pressure-bonding structure 151 and pressurized with a pressure of 0.4 MPa or more, a partial region of the adhesive member 130 located between the plurality of sensor substrates 112 is The sensor substrate 112 is also adhered to a partial region of the side surface 112b.
  • FIG. 3 shows a configuration example for improving the adhesive strength of the adhesive member 130.
  • FIG. 3 is a schematic cross-sectional view for explaining a configuration example for improving the adhesive force of the adhesive member 130 in the cross-sectional structure in which the region B in FIG.
  • a corner portion that can be constituted by the surface 112a and the side surface 112c of the sensor substrate 112 is removed, and the sensor substrate 112 is between the first surface 112a and the side surface 112c, and the first surface 112a and the side surface 112c.
  • the third surface 112d is not parallel.
  • the bonding member 130 is continuously bonded across the plurality of sensor substrates 112 across at least a part of the first surface 112a to the third surface 112d and the side surface 112c.
  • FIG. 4A and 4B show another configuration example for improving the adhesive force of the adhesive member 130.
  • FIG. FIG. 4A is a schematic cross-sectional view for explaining a cross-sectional structure of another configuration example for improving the adhesive force of the adhesive member 130 at the position AA ′ in FIG.
  • FIG. 4B is a schematic cross-sectional view in which a region C in FIG. In FIG. 4A, the protective layer 123 is omitted for simplification of the drawing.
  • the side surface 112c of at least one sensor substrate 112 among the plurality of sensor substrates 112 is inclined.
  • This inclination is directed toward the inside of the sensor substrate 112 with an angle D from the first surface 112a toward the second surface 112b with respect to a perpendicular perpendicular to the first surface 112a. Since the structure in which the plurality of sensor substrates 112 are inclined at such an angle D, the adhesive member 130 is less likely to peel from at least a part of the side surface 112c as compared with the configuration of FIG. .
  • the angle D is preferably 0.2 to 5 degrees.
  • the rigidity of the fixing member 113 is preferably lower than the rigidity of the adhesive member 130.
  • the radiation detection apparatus using the more preferable fixing member 113 is demonstrated using Fig.5 (a) and (b).
  • 5A is a schematic cross-sectional view for explaining a cross-sectional structure of a radiation detection apparatus using a more preferable fixing member 113
  • FIG. 5B is a schematic cross-sectional view for explaining a more preferable fixing member 113.
  • FIG. 5A when the rigidity of the fixing member 113 is lower than the rigidity of the adhesive member 130, the stress due to the temperature fluctuation and the difference in thermal expansion coefficient occurs in the direction of the arrow in the figure. Even so, the fixing member 113 absorbs the stress.
  • a preferred fixing member 113 is a sheet-like fixing member 113 in which an elastic material 161 is sandwiched between adhesives 160 as shown in FIG.
  • the elastic material 161 a sheet-like polyolefin-based foam is used, and air bubbles 162 are included.
  • the adhesive 160 a sheet-like acrylic or silicon adhesive is used.
  • FIG. 6 shows an application example to a movable radiation detection system using the radiation detection apparatus of the present embodiment described above.
  • FIG. 6 is a conceptual diagram of a radiation detection system using a portable radiation detection apparatus capable of capturing moving images / still images.
  • reference numeral 115 denotes a display unit capable of displaying an image signal obtained by the radiation detection apparatus 100 according to the present embodiment
  • 903 denotes a bed for placing a subject 904.
  • reference numeral 902 denotes a carriage that can move the radiation generation apparatus 110, the radiation detection apparatus 100, and the C-shaped arm 901
  • reference numeral 905 denotes a movable control apparatus having a configuration capable of controlling them.
  • the C-type arm 901 holds the radiation generation apparatus 110 and the radiation detection apparatus 100.
  • the control device 905 includes a control computer 108, a control console 114, and a radiation control device 109.
  • the image signal obtained by the radiation detection device 100 can be image-processed and transmitted to the display device 115 or the like.
  • the image data generated by the image processing by the control device 905 can be transferred to a remote place by transmission means such as a telephone line. Thereby, it becomes possible for a remote doctor to diagnose an image based on the transferred image data.
  • the transmitted image data can be recorded on a film or stored in a storage means such as an optical disk.
  • the radiation detection apparatus 100 may be configured to be removable from the C-type arm 901, and imaging may be performed using a radiation generation apparatus different from the radiation generation apparatus 110 of the C-type arm 901.
  • the durability test is a test in which the image is confirmed by irradiating the radiation detection device with radiation after performing vibration at a predetermined frequency with a gravitational acceleration of 2G for 1 hour in a state where the scintillator 120 is disposed downward.
  • Example 1 As the sensor substrate 112, a single crystal silicon substrate having a thickness of 500 ⁇ m in which a plurality of photodiodes are arrayed on the first surface 112a is used.
  • the scintillator 120 includes an Al base 121 having a thickness of 300 ⁇ m, a CsI: Tl scintillator layer 122 having a thickness of 800 ⁇ m, and a polyparaxylylene scintillator protective layer 123 having a thickness of 25 ⁇ m.
  • the sensor substrate 112 is fixed to a base 11 of a glass substrate having a thickness of 1.8 mm by a fixing member 113 using an elastic material 161 which is a polyolefin foam having a thickness of 1.5 mm.
  • An adhesive member 130 using an acrylic resin having a thickness of 25 ⁇ m is disposed between the scintillator 120 and the first surfaces 112 a of the plurality of sensor substrates 112. Then, as shown in FIG. 2 (b), the adhesive member 130 is pressed from the first surface 112 a side of the side surface 112 c of the sensor substrate 112 by applying a pressure of 0.4 MPa using a roller 150 that can rotate. Bonded to a position of 5 ⁇ m.
  • Example 2 The sensor substrate 112, the scintillator 120, and the fixing member 113 are the same as those in the first embodiment.
  • an adhesive member 130 using a hot-melt resin whose main component is an ethylene-methacrylate copolymer having a thickness of 25 ⁇ m is disposed between the scintillator 120 and the first surfaces 112a of the plurality of sensor substrates 112.
  • the adhesive member 130 is pressed with a pressure of 0.4 MPa using the pressure-bonding structure 151 heated to 100 to 120 ° C., so that the adhesive member 130 is attached to the side surface 112c of the sensor substrate 112.
  • the first surface 112a side is bonded to a position of 50 ⁇ m.
  • Example 3 The scintillator 120, the adhesive member 130, and the fixing member 113 are the same as those in the first embodiment.
  • the sensor substrate 112 is the same as that of Example 1 except that the corner portion is removed over the end of 5 ⁇ m of the first surface and the third surface 112d is provided.
  • the adhesive member 130 is positioned at a position 7 ⁇ m from the first surface 112a side of the side surface 112c of the sensor substrate 112 by applying a pressure of 0.4 MPa using the roller 150 that can rotate. Glued up to.
  • Example 4 The scintillator 120, the adhesive member 130, and the fixing member 113 are the same as those in the first embodiment.
  • the sensor substrate 112 is the same as that of Example 1 except that the sensor substrate 112 is inclined toward the inside of the sensor substrate 112 with an angle D of 1 degree.
  • the adhesive member 130 is positioned 4 ⁇ m from the first surface 112a side of the side surface 112c of the sensor substrate 112 by applying pressure with a pressure of 0.4 MPa using the roller 150 that can rotate. Glued up to.

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PCT/JP2014/078874 2013-12-13 2014-10-30 放射線検出装置、放射線検出システム、及び、放射線検出装置の製造方法 Ceased WO2015087636A1 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
CN201811096760.1A CN109239761B (zh) 2013-12-13 2014-10-30 辐射检测装置、辐射检测系统、以及用于制造辐射检测装置的方法
CN201480068223.XA CN105829916B (zh) 2013-12-13 2014-10-30 辐射检测装置、辐射检测系统、以及用于制造辐射检测装置的方法
GB1612140.2A GB2536394B (en) 2013-12-13 2014-10-30 Radiation detecting device, and radiation detecting system
DE112014005663.4T DE112014005663B4 (de) 2013-12-13 2014-10-30 Strahlungserfassungsvorrichtung, Strahlungserfassungssystem und Verfahren zur Herstellung der Strahlungserfassungsvorrichtung
KR1020167017969A KR101818874B1 (ko) 2013-12-13 2014-10-30 방사선 검출 장치, 방사선 검출 시스템 및 방사선 검출 장치의 제조 방법
CN201910219458.9A CN110045410B (zh) 2013-12-13 2014-10-30 辐射检测装置及其制造方法、辐射检测系统
US15/103,247 US20160291172A1 (en) 2013-12-13 2014-10-30 Radiation detecting device, radiation detecting system, and method for manufacturing the radiation detecting device
US16/794,731 US11226419B2 (en) 2013-12-13 2020-02-19 Radiation detecting device, radiation detecting system, and method for manufacturing the radiation detecting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013258139A JP6270450B2 (ja) 2013-12-13 2013-12-13 放射線検出装置、放射線検出システム、及び、放射線検出装置の製造方法
JP2013-258139 2013-12-13

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US15/103,247 A-371-Of-International US20160291172A1 (en) 2013-12-13 2014-10-30 Radiation detecting device, radiation detecting system, and method for manufacturing the radiation detecting device
US16/794,731 Continuation US11226419B2 (en) 2013-12-13 2020-02-19 Radiation detecting device, radiation detecting system, and method for manufacturing the radiation detecting device

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WO2015087636A1 true WO2015087636A1 (ja) 2015-06-18

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US (2) US20160291172A1 (https=)
JP (1) JP6270450B2 (https=)
KR (1) KR101818874B1 (https=)
CN (3) CN109239761B (https=)
DE (1) DE112014005663B4 (https=)
GB (1) GB2536394B (https=)
WO (1) WO2015087636A1 (https=)

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JP6877289B2 (ja) * 2017-07-31 2021-05-26 キヤノン株式会社 放射線検出装置、放射線検出システム、及び放射線出装置の製造方法
JP6601825B2 (ja) 2018-04-06 2019-11-06 株式会社ＥｍｂｏｄｙＭｅ 画像処理装置および２次元画像生成用プログラム
JP6659182B2 (ja) 2018-07-23 2020-03-04 キヤノン株式会社 放射線撮像装置、その製造方法及び放射線撮像システム
EP4039193B1 (en) * 2019-09-30 2025-08-13 FUJIFILM Corporation Radiation imaging device and radiation imaging device control method
TWI904292B (zh) * 2020-12-04 2025-11-11 日商力森諾科股份有限公司 固化性樹脂膜、半導體裝置製造用膜材料、半導體裝置製造用固化性樹脂組成物、及製造半導體裝置之方法
JP7608148B2 (ja) * 2020-12-23 2025-01-06 浜松ホトニクス株式会社 放射線検出器、放射線検出器の製造方法、及びシンチレータパネルユニット

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