WO2014104522A1 - 봉지용 조성물, 이를 포함하는 장벽층 및 이를 포함하는 봉지화된 장치 - Google Patents
봉지용 조성물, 이를 포함하는 장벽층 및 이를 포함하는 봉지화된 장치 Download PDFInfo
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- WO2014104522A1 WO2014104522A1 PCT/KR2013/006898 KR2013006898W WO2014104522A1 WO 2014104522 A1 WO2014104522 A1 WO 2014104522A1 KR 2013006898 W KR2013006898 W KR 2013006898W WO 2014104522 A1 WO2014104522 A1 WO 2014104522A1
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- WIPO (PCT)
- Prior art keywords
- barrier layer
- composition
- carbon atoms
- encapsulation
- acrylate
- Prior art date
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- 230000004888 barrier function Effects 0.000 title claims abstract description 132
- 239000000203 mixture Substances 0.000 title claims abstract description 68
- 239000000178 monomer Substances 0.000 claims abstract description 66
- 125000002843 carboxylic acid group Chemical group 0.000 claims abstract description 27
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 53
- 125000004432 carbon atom Chemical group C* 0.000 claims description 53
- 238000005538 encapsulation Methods 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 18
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- -1 lanthanide metals Chemical class 0.000 claims description 10
- 239000003999 initiator Substances 0.000 claims description 9
- 125000002947 alkylene group Chemical group 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 8
- 125000000732 arylene group Chemical group 0.000 claims description 7
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 6
- 125000002993 cycloalkylene group Chemical group 0.000 claims description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 150000002009 diols Chemical class 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 125000005842 heteroatom Chemical group 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000010410 layer Substances 0.000 description 111
- 239000000758 substrate Substances 0.000 description 17
- 150000002739 metals Chemical class 0.000 description 15
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- 239000001301 oxygen Substances 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
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- 239000012044 organic layer Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
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- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 239000012965 benzophenone Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
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- 239000010409 thin film Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 244000028419 Styrax benzoin Species 0.000 description 3
- 235000000126 Styrax benzoin Nutrition 0.000 description 3
- 235000008411 Sumatra benzointree Nutrition 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 229960002130 benzoin Drugs 0.000 description 3
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 3
- 229940024874 benzophenone Drugs 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000001733 carboxylic acid esters Chemical class 0.000 description 3
- 125000000753 cycloalkyl group Chemical group 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 235000019382 gum benzoic Nutrition 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- QTUVQQKHBMGYEH-UHFFFAOYSA-N 2-(trichloromethyl)-1,3,5-triazine Chemical compound ClC(Cl)(Cl)C1=NC=NC=N1 QTUVQQKHBMGYEH-UHFFFAOYSA-N 0.000 description 2
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 2
- FGTYTUFKXYPTML-UHFFFAOYSA-N 2-benzoylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 FGTYTUFKXYPTML-UHFFFAOYSA-N 0.000 description 2
- HAZQZUFYRLFOLC-UHFFFAOYSA-N 2-phenyl-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound ClC(Cl)(Cl)C1=NC(C(Cl)(Cl)Cl)=NC(C=2C=CC=CC=2)=N1 HAZQZUFYRLFOLC-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
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- 150000001491 aromatic compounds Chemical group 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
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- 238000000576 coating method Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 2
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- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
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- 238000003786 synthesis reaction Methods 0.000 description 2
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229920001567 vinyl ester resin Polymers 0.000 description 2
- HJIAMFHSAAEUKR-UHFFFAOYSA-N (2-hydroxyphenyl)-phenylmethanone Chemical compound OC1=CC=CC=C1C(=O)C1=CC=CC=C1 HJIAMFHSAAEUKR-UHFFFAOYSA-N 0.000 description 1
- FJKOQFIGFHTRRW-UHFFFAOYSA-N (2-methoxy-3-methylphenyl)-(3-methylphenyl)methanone Chemical compound COC1=C(C)C=CC=C1C(=O)C1=CC=CC(C)=C1 FJKOQFIGFHTRRW-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
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- YIKSHDNOAYSSPX-UHFFFAOYSA-N 1-propan-2-ylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)C YIKSHDNOAYSSPX-UHFFFAOYSA-N 0.000 description 1
- BRKORVYTKKLNKX-UHFFFAOYSA-N 2,4-di(propan-2-yl)thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC(C(C)C)=C3SC2=C1 BRKORVYTKKLNKX-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- ZAOMUMJENGCKAR-UHFFFAOYSA-N 2-(1-phenylbut-3-en-2-yloxy)but-3-enylbenzene Chemical compound C=1C=CC=CC=1CC(C=C)OC(C=C)CC1=CC=CC=C1 ZAOMUMJENGCKAR-UHFFFAOYSA-N 0.000 description 1
- DQMOHZLFVGYNAN-UHFFFAOYSA-N 2-(2-phenylethenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound ClC(Cl)(Cl)C1=NC(C(Cl)(Cl)Cl)=NC(C=CC=2C=CC=CC=2)=N1 DQMOHZLFVGYNAN-UHFFFAOYSA-N 0.000 description 1
- FVNIIPIYHHEXQA-UHFFFAOYSA-N 2-(4-methoxynaphthalen-1-yl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound C12=CC=CC=C2C(OC)=CC=C1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 FVNIIPIYHHEXQA-UHFFFAOYSA-N 0.000 description 1
- QRHHZFRCJDAUNA-UHFFFAOYSA-N 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound C1=CC(OC)=CC=C1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 QRHHZFRCJDAUNA-UHFFFAOYSA-N 0.000 description 1
- MPNIGZBDAMWHSX-UHFFFAOYSA-N 2-(4-methylphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound C1=CC(C)=CC=C1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 MPNIGZBDAMWHSX-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 1
- AAXRSWGYLGOFQP-UHFFFAOYSA-N 2-butoxy-1-(2-butoxyphenyl)ethanone Chemical compound CCCCOCC(=O)C1=CC=CC=C1OCCCC AAXRSWGYLGOFQP-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- 125000003006 2-dimethylaminoethyl group Chemical group [H]C([H])([H])N(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- MRDMGGOYEBRLPD-UHFFFAOYSA-N 2-ethoxy-1-(2-ethoxyphenyl)ethanone Chemical compound CCOCC(=O)C1=CC=CC=C1OCC MRDMGGOYEBRLPD-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- LODHFNUFVRVKTH-ZHACJKMWSA-N 2-hydroxy-n'-[(e)-3-phenylprop-2-enoyl]benzohydrazide Chemical compound OC1=CC=CC=C1C(=O)NNC(=O)\C=C\C1=CC=CC=C1 LODHFNUFVRVKTH-ZHACJKMWSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
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- GYJREHMTTLYKRJ-UHFFFAOYSA-N 3-(2-fluorophenyl)-2-(phenylmethoxycarbonylamino)propanoic acid Chemical compound C=1C=CC=CC=1COC(=O)NC(C(=O)O)CC1=CC=CC=C1F GYJREHMTTLYKRJ-UHFFFAOYSA-N 0.000 description 1
- OKISUZLXOYGIFP-UHFFFAOYSA-N 4,4'-dichlorobenzophenone Chemical compound C1=CC(Cl)=CC=C1C(=O)C1=CC=C(Cl)C=C1 OKISUZLXOYGIFP-UHFFFAOYSA-N 0.000 description 1
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- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
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- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
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- MDDUHVRJJAFRAU-YZNNVMRBSA-N tert-butyl-[(1r,3s,5z)-3-[tert-butyl(dimethyl)silyl]oxy-5-(2-diphenylphosphorylethylidene)-4-methylidenecyclohexyl]oxy-dimethylsilane Chemical compound C1[C@@H](O[Si](C)(C)C(C)(C)C)C[C@H](O[Si](C)(C)C(C)(C)C)C(=C)\C1=C/CP(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 MDDUHVRJJAFRAU-YZNNVMRBSA-N 0.000 description 1
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- KOZCZZVUFDCZGG-UHFFFAOYSA-N vinyl benzoate Chemical compound C=COC(=O)C1=CC=CC=C1 KOZCZZVUFDCZGG-UHFFFAOYSA-N 0.000 description 1
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
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- H—ELECTRICITY
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- H10K2102/301—Details of OLEDs
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Definitions
- the present invention relates to a composition for encapsulation, a barrier layer comprising the same, a barrier stack comprising the same, an encapsulated device comprising the same, and a method of encapsulating the device using the same. More specifically, the present invention provides a composition for encapsulation, a barrier layer comprising the same, which can implement a barrier stack for encapsulation of an environment-sensitive device by including a specific monomer, thereby improving adhesion to an inorganic barrier layer and improving reliability.
- a barrier stack comprising, an encapsulated device comprising the same, and a method of encapsulating the device using the same.
- Organic optoelectronic devices such as organic light emitting diodes, devices including photovoltaic cells and display devices such as organic thin film transistors must be encapsulated to protect their sensitive components from atmospheric gases (primarily oxygen and / or moisture). Without proper protection, the device can be degraded. In addition, deterioration of the quality of the device may occur mainly due to the appearance of dark spots. In particular, in the case of the organic light emitting diode, the quality of the organic light emitting diode may be degraded due to water vapor penetrating into the diode, and the quality of the cathode (or anode) / organic membrane interface may be degraded.
- Encapsulation can typically be accomplished by bonding the glass cap to the display device using a particular adhesive, particularly an adhesive having low water permeability.
- a solid moisture getter may be placed between the substrate and the cap to extend the life of the device.
- Encapsulation with a cap fits well with rigid devices, but may not fit well with devices that include a flexible support (eg, a flexible display).
- CMOS complementary metal oxide semiconductor
- a “monolithic” encapsulation typically a thin film encapsulation with good oxygen and water vapor barrier properties, is used.
- the most commonly used materials for this method are generally oxides of the formulas SiOx, SiNx, SiOxNy and AlxOy deposited using Chemical Vapor Deposition (CVD), optionally Plasma Promoted Chemical Vapor Deposition (PECVD) or Atomic Layer Deposition (ALD). Dielectric and / or nitride.
- the method may be preferred over physical vapor deposition (PVD), such as sputtering, which results in the formation of a film having an unsatisfactory property of protective film due to defects such as many pinholes in the deposited film, which are mostly aggressive to organic semiconductors and the like.
- PVD physical vapor deposition
- Plasma accelerated chemical vapor deposition and atomic layer deposition have much fewer drawbacks than the films obtained by physical vapor deposition and have the advantage that the deposited films are very uniform. That is, the two methods can provide excellent step coverage.
- Another object of the present invention is to provide a composition for encapsulation, which has a high photocurability, low curing shrinkage ratio after curing, and high adhesion to an inorganic barrier layer, thereby enabling a barrier layer for encapsulation.
- Still another object of the present invention is to provide a barrier layer embodied as the composition for encapsulation, a barrier stack comprising the same, an encapsulated device including the same, and a method of encapsulating the device using the same.
- composition for encapsulation which is one aspect of this invention contains (A) photocurable monomer and (B) carboxylic acid group containing photocurable monomer, and the said (B) carboxylic acid group containing photocurable monomer may have an amide bond.
- the barrier layer which is another aspect of the present invention, may include a cured product of the composition for encapsulation.
- Another aspect of the invention is an encapsulated device comprising a member for a device; And a barrier stack formed over the device member, the barrier stack comprising an inorganic barrier layer and an organic barrier layer, wherein the organic barrier layer has an adhesion of about 20 kgf / (mm) 2 to the inorganic barrier layer. To about 100 kgf / (mm) 2 .
- the present invention provides a composition for encapsulation having a high photocuring rate, a low curing shrinkage rate after curing, a high adhesion to the inorganic barrier layer, and a highly reliable barrier layer.
- FIG. 1 is a cross-sectional view of an encapsulated device of one embodiment of the present invention.
- FIG. 2 is a cross-sectional view of an encapsulated device of another embodiment of the present invention.
- composition for sealing which is one aspect of this invention can contain the monomer containing (A) photocurable monomer and (B) carboxylic acid group.
- the photocurable monomer is a non-carboxylic acid type not containing a carboxylic acid group, and may mean a monomer having, for example, a (meth) acrylate group, a vinyl group, or the like as the photocurable functional group.
- the photocurable monomer may include a non-amide monomer that does not include an amide bond.
- the photocurable monomer may comprise a monofunctional monomer, a polyfunctional monomer, or a mixture thereof.
- the photocurable monomer has 1 to 30, preferably 1 to 20, more preferably 1 to 5 substituted or unsubstituted vinyl, acrylate or methacrylate groups. It may include a monomer.
- the photocurable monomer is an aromatic compound having 6 to 20 carbon atoms having a substituted or unsubstituted vinyl group; Unsaturated carboxylic acid esters having an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aromatic group having 6 to 20 carbon atoms, or a hydroxy group and an alkyl group having 1 to 20 carbon atoms; Unsaturated carboxylic esters having an amino alkyl group having 1 to 20 carbon atoms; Vinyl esters of saturated or unsaturated carboxylic acids having 1 to 20 carbon atoms; Unsaturated carboxylic acid glycidyl esters having 1 to 20 carbon atoms; Vinyl cyanide compounds; Unsaturated amide compounds.
- the photocurable monomer may include an aromatic compound having 6 to 20 carbon atoms having an alkenyl group including vinyl groups such as styrene, ⁇ -methyl styrene, vinyl toluene, vinyl benzyl ether, and vinyl benzyl methyl ether; Methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, hexyl (meth) acrylate, Octyl (meth) acrylate, nonyl (meth) acrylate, decanyl (meth) acrylate, undecanyl (meth) acrylate, dodecyl (meth) acrylate, cyclohexyl (meth) acrylate, benzyl (meth) Unsaturated carboxylic acid esters such as acrylate and phenyl group
- the photocurable monomer is a (meth) acrylate having an alkyl group having 1 to 20 carbon atoms, a di (meth) acrylate having a diol having 2 to 20 carbon atoms, and a tri (meth) acryl having a triol having 3 to 20 carbon atoms Rate, tetra (meth) acrylate of tetraol of 4 to 20 carbon atoms,-(-YO-) n- and -Y- (wherein Y is a linear or branched alkylene group having 1 to 5 carbon atoms, n is It may comprise one or more of di (meth) acrylate having one or more of the units, preferably (meth) acrylate is linked to the unit.
- the photocurable monomer may include a mixture of a monofunctional monomer and a polyfunctional monomer.
- the monofunctional monomer: polyfunctional monomer in the mixture is about 1: 0.1 to about 1:10, preferably about 1: 1 to about 1: 7, more preferably about 1: 2 to about 1: It may be included in a weight ratio of five.
- the photocurable monomer may be included in about 20% to about 95% by weight of the composition on a solids basis. Preferably from about 50% to about 95%, more preferably from about 60% to about 95%, most preferably from about 70% to about 95% by weight. In the above range, the composition can improve the adhesion between the organic layer and the inorganic layer at the time of manufacturing the thin film encapsulation layer can reduce or prevent the outgas and moisture permeability decrease.
- the carboxylic acid group-containing monomer may increase the adhesion to the inorganic barrier layer after curing of the composition to prevent moisture and oxygen from penetrating from the outside to improve the reliability of the device member.
- the carboxylic acid group-containing photocurable monomer may include a photocurable monomer containing a carboxylic acid group and having a photocurable functional group (eg, a (meth) acrylate group, a vinyl group, etc.).
- a photocurable monomer containing a carboxylic acid group and having a photocurable functional group eg, a (meth) acrylate group, a vinyl group, etc.
- the carboxylic acid group-containing photocurable monomer may include a monomer including a carboxylic acid group having a cyclized single bond or a double bond.
- the “ringing” may mean that the single bond or double bond is included in a cycloalkyl group having 6 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms.
- the carboxylic acid group-containing photocurable monomer may be represented by the following formula (1):
- R 1 is hydrogen, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms
- R 2 is a substituted or unsubstituted alkylene group having 1 to 30 carbon atoms, a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, a cycloalkylene group having 5 to 20 carbon atoms,
- R 3 is a substituted or unsubstituted linear or branched alkylene group having 1 to 30 carbon atoms, a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, an arylene group having a substituted or unsubstituted hetero atom having 6 to 30 carbon atoms Or a cycloalkylene group having 5 to 20 carbon atoms,
- X is -O-, -S- or -NR- (wherein R is hydrogen or an alkyl group having 1 to 10 carbon atoms).
- R 2 may be an alkylene group having 1 to 5 carbon atoms.
- R 3 may be a linear or branched alkylene group having 1 to 15 carbon atoms, a cycloalkylene group having 6 to 20 carbon atoms, a substituted or unsubstituted arylene group having 6 to 20 carbon atoms.
- the substituent may be a nitro group.
- the carboxylic acid group-containing photocurable monomer may include one or more of the following formulas 2 to 6:
- the carboxylic acid group-containing photocurable monomer may be synthesized by a conventional synthetic method or may be used by purchasing a commercially available product.
- the carboxylic acid group-containing photocurable monomer is included in the photocurable composition together with the photocurable monomer to increase the photocurability, and the organic adhesive having high adhesion to the inorganic barrier layer in an encapsulation structure in which the conventional inorganic barrier layer and the organic barrier layer are deposited. Barrier layers can be implemented.
- the carboxylic acid group-containing photocurable monomer is about 1% to about 60% by weight, preferably about 1% to about 30% by weight, more preferably about 5% to about 30% by weight in the composition It may be included as. Within this range, the adhesion to the inorganic barrier layer can be increased.
- composition may further comprise an initiator (C).
- the initiator may include, without limitation, a conventional photopolymerization initiator capable of carrying out a photocurable reaction.
- the photopolymerization initiator may include triazine, acetophenone, benzophenone, thioxanthone, benzoin, phosphorus, oxime or mixtures thereof.
- Triazines include 2,4,6-trichloro-s-triazine, 2-phenyl-4,6-bis (trichloromethyl) -s-triazine, 2- (3 ', 4'-dimethoxy sty Reyl) -4,6-bis (trichloromethyl) -s-triazine, 2- (4'-methoxy naphthyl) -4,6-bis (trichloromethyl) -s-triazine, 2- ( p-methoxy phenyl) -4,6-bis (trichloromethyl) -s-triazine, 2- (p-tolyl) -4,6-bis (trichloromethyl) -s-triazine, 2-r Phenyl-4,6-bis (trichloromethyl) -s-triazine, bis (trichloromethyl) -6-styryl-s-triazine, 2- (naphtho-1-yl) -4,
- acetophenone system 2,2'- diethoxy acetophenone, 2,2'- dibutoxy acetophenone, 2-hydroxy-2-methyl propiophenone, pt-butyl trichloro acetophenone, pt-butyl dichloro Acetophenone, 4-chloro acetophenone, 2,2'-dichloro-4-phenoxy acetophenone, 2-methyl-1- (4- (methylthio) phenyl) -2-morpholino propane-1-one, 2-benzyl-2-dimethyl amino-1- (4-morpholino phenyl) -butan-1-one, or mixtures thereof.
- benzophenones include benzophenone, benzoyl benzoic acid, benzoyl benzoic acid methyl, 4-phenyl benzophenone, hydroxy benzophenone, acrylated benzophenone, 4,4'-bis (dimethyl amino) benzophenone, and 4,4'-dichloro benzo Phenone, 3,3'-dimethyl-2-methoxy benzophenone or mixtures thereof.
- Thioxanthones include thioxanthone, 2-methyl thioxanthone, isopropyl thioxanthone, 2,4-diethyl thioxanthone, 2,4-diisopropyl thioxanthone, 2-chloro thioxanthone or Mixtures thereof.
- the benzoin system may be benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl dimethyl ketal or mixtures thereof.
- Phosphorus-based may be bisbenzoylphenyl phosphine oxide, benzoyldiphenyl phosphine oxide or mixtures thereof.
- oximes examples include 2- (o-benzoyloxime) -1- [4- (phenylthio) phenyl] -1,2-octanedione and 1- (o-acetyloxime) -1- [9-ethyl-6- ( 2-methylbenzoyl) -9H-carbazol-3-yl] ethanone, or mixtures thereof.
- the initiator is about 0.1% to about 20% by weight, preferably about 0.5% to about 20% by weight, more preferably about 0.5% to about 10% by weight, and most preferably about 0.5 wt% to about 7 wt%. Within this range, photopolymerization can occur sufficiently during exposure, and the transmittance can be prevented from being lowered due to the unreacted initiator remaining after the photopolymerization.
- the composition for sealing can be formed by mixing the said photocurable monomer, the photocurable monomer containing a carboxylic acid group, and a photoinitiator.
- it can be formed by the solventless type which does not contain a solvent.
- the composition for encapsulation may have a photocurability of about 90% or more.
- the hardening shrinkage stress after curing is low to implement a layer that does not generate a shift can be used for sealing the device.
- Photocuring rate can be measured by a conventional method.
- the photocurable composition is applied onto a glass substrate and cured for 100 mW / cm 2 and 10 seconds. Aliquot the cured film and measure photocurability using FT-IR. Photocuring rate is calculated
- the composition for encapsulation may have a viscosity of about 10 cps to about 50 cps at 25 ⁇ 2 ° C. In this range, deposition may be possible as the barrier layer material.
- the composition for encapsulation may have an adhesion to the inorganic barrier layer after curing from about 20 kgf / (mm) 2 to about 100 kgf / (mm) 2 . If the adhesion is less than about 20 kgf / (mm) 2 , externally penetrated moisture or oxygen can easily penetrate between the inorganic barrier layer and the organic barrier layer, resulting in poor reliability. If it is greater than about 100 kgf / (mm) 2 , problems may occur in the uniformity of the organic barrier layer.
- the inorganic barrier layer may include, but is not limited to, an inorganic barrier layer (eg, silicon oxide, silicon nitride, aluminum oxide, etc.) described in detail below.
- the adhesion may be between about 20 kgf / (mm) 2 and about 55 kgf / (mm) 2 .
- the composition for encapsulation may have a visible light transmittance of about 94% or more after curing. Within this range, the visibility of the display device can be improved when the display device is encapsulated.
- the transmittance is a value measured at a wavelength of 550 nm. Preferably, about 94% to about 100%.
- the transmittance can be measured with reference to the following experimental example.
- device members in particular display device members, are decomposed or defective due to permeation of gases or liquids in the surrounding environment, such as oxygen and / or moisture in the atmosphere and / or water vapor and chemicals used in processing electronics. Can be.
- the display apparatus needs to be encapsulated or encapsulated.
- OLEDs organic light emitting diodes
- lighting devices flexible organic light emitting diode displays
- metal sensor pads metal sensor pads
- microdisk lasers electrochromic devices
- photochromic devices photochromic devices
- microelectromechanical systems solar cells
- integrated circuits integrated circuits.
- Charge coupling devices light emitting polymers, light emitting diodes, and the like, but is not limited thereto.
- composition for encapsulation of the present invention satisfies all of the above-described adhesion to the inorganic barrier layer, photocurability, and transmittance, thereby forming an organic barrier layer used for encapsulation or encapsulation of the device, in particular, a flexible display device. .
- An organic barrier layer which is another aspect of the present invention, may include a cured product of the composition.
- the organic barrier layer can be formed by photocuring the composition for encapsulation described above.
- the encapsulation composition may be coated to a thickness of about 0.1 ⁇ m to about 20 ⁇ m, and cured by irradiation at about 10 mW / cm 2 to about 500 mW / cm 2 for about 1 second to about 50 seconds.
- the organic barrier layer has the physical properties of the composition for encapsulation after curing described above. Therefore, the barrier stack can be formed together with the inorganic barrier layer to be described below, and can be used for encapsulation of the device.
- a barrier stack which is another aspect of the present invention, may include the organic barrier layer and the inorganic barrier layer.
- the inorganic barrier layer may be formed of an inorganic layer different from the organic barrier layer, thereby supplementing the effect of the organic barrier layer.
- the inorganic barrier layer is not particularly limited as long as the inorganic barrier layer is excellent in light transmittance and excellent in moisture and / or oxygen barrier property.
- the metal is silicon (Si), aluminum (Al), selenium (Se), zinc (Zn), antimony (Sb), indium (In), germanium (Ge), tin (Sn), bismuth (Bi), transition metal , Lanthanide metals, and the like, but is not limited thereto.
- the inorganic barrier layer may be silicon oxide, silicon nitride, silicon oxygen nitride, ZnSe, ZnO, Sb 2 O 3 , Al 2 O 3 , In 2 O 3 , SnO 2 .
- the inorganic barrier layer and the organic barrier layer may be deposited in a vacuum process, such as sputtering, chemical vapor deposition, plasma chemical vapor deposition, evaporation, sublimation, electron cyclotron resonance-plasma vapor deposition, and combinations thereof.
- the organic barrier layer secures the above-described physical properties. As a result, when the organic barrier layer is deposited alternately with the inorganic barrier layer, it is possible to secure the smoothing characteristics of the inorganic barrier layer. In addition, the organic barrier layer can prevent the defect of the inorganic barrier layer from propagating to another inorganic barrier layer.
- the barrier stack includes the organic barrier layer and the inorganic barrier layer, but the number of barrier stacks is not limited.
- the combination of barrier stacks may vary depending on the level of permeation resistance to oxygen and / or moisture and / or water vapor and / or chemicals.
- the organic barrier layer and the inorganic barrier layer may be deposited alternately. This is due to the effect on the organic barrier layer produced due to the physical properties of the above-described composition. As a result, the organic barrier layer and the inorganic barrier layer can complement or enhance the sealing effect on the device.
- the organic barrier layer and the inorganic barrier layer may be deposited two or more times alternately up to 10 times (e.g., 2 to 10 times), preferably up to 7 times, more preferably 2 to 7 times. have.
- the thickness of one organic barrier layer is about 0.1 ⁇ m to about 20 ⁇ m, preferably about 1 ⁇ m to about 10 ⁇ m, and the thickness of one inorganic barrier layer is about 5 nm to about 500 nm, preferably about 5 nm to About 200 nm.
- the barrier stack is a thin film encapsulant and may have a thickness of about 5 ⁇ m or less, preferably about 1.5 ⁇ m to about 5 ⁇ m.
- An encapsulated device which is another aspect of the present invention, may include a device member and the barrier layer or barrier stack.
- the device may comprise the device member.
- it may include a display device.
- the device may comprise a device member and a barrier layer formed on the device member and comprising an inorganic barrier layer and an organic barrier layer.
- FIG. 1 and 2 are cross-sectional views of an encapsulated device of one embodiment of the present invention.
- a device member eg, an organic light emitting device
- an inorganic barrier layer 31 and an organic barrier layer A barrier stack 30 consisting of 32 may be deposited.
- a device member eg, an organic light emitting device
- an inorganic barrier layer 31 and an organic barrier layer A barrier stack 30 consisting of 32 may be deposited.
- 1 shows an embodiment in which the device member 20 and the inorganic barrier layer 31 are in contact with each other.
- 2 is a specific example in which an empty space 40 is formed between the device member 20 and the inorganic barrier layer 31.
- the device member Details of the device member, the organic barrier layer, the inorganic barrier layer and the barrier stack are as described above.
- the substrate is not particularly limited as long as it is a substrate on which device members can be laminated.
- it may be made of a material such as transparent glass, plastic sheet, silicon or metal substrate.
- substrate may not be included.
- the encapsulated device can be manufactured by conventional methods.
- a device member is formed on the substrate and an inorganic barrier layer is formed.
- the composition for sealing can be apply
- the process of forming the inorganic barrier layer and the organic barrier layer can be repeated.
- the method of forming the inorganic barrier layer and the organic barrier layer is not limited, but may include deposition.
- the encapsulated device is an organic light emitting display device, a substrate, an organic light emitting unit formed on the substrate, an inorganic barrier layer encapsulating the organic light emitting unit, and an organic layer stacked on the inorganic barrier layer.
- a barrier layer, wherein the organic barrier layer may have an adhesion to the inorganic barrier layer from about 20 kgf / (mm) 2 to about 100 kgf / (mm) 2 .
- Another aspect of the invention is a method of encapsulating a device member comprising: laminating one or more device members on a substrate; And forming at least one barrier stack comprising at least one inorganic barrier layer and an organic barrier layer and adjacent the device component.
- the substrate, the device member, the inorganic barrier layer, the organic barrier layer, and the barrier stack are as described above.
- the device member is laminated on a substrate. This can be carried out in the same manner as the inorganic barrier layer and the organic barrier layer forming method, but is not limited thereto.
- the inorganic barrier layer and the organic barrier layer may be formed by a vacuum process such as sputtering, chemical vapor deposition, plasma chemical vapor deposition, evaporation, sublimation, electron cyclotron resonance-plasma vapor deposition, and combinations thereof.
- Photocurable monomer (A1) tetraethylene glycol diacrylate, (A2) decanediol diacrylate, (A3) pentaerythritol tetraacrylate (above, Aldrich)
- Die share strength (kgf / (mm) 2 ): A method for measuring the adhesion between silicon nitride and silicon nitride, the adhesion was measured in the same way as the method of measuring the die shear strength. The force of peeling was measured by pushing the upper part from the side with a force of 200 kgf at 25 ° C. with the dage series 4000PXY, which is an adhesive force measuring instrument. The size of the lower glass was 2 cm x 2 cm x 1 mm (width x length x thickness), and the size of the upper glass was 1.5 cm x 1.5 cm x 1 mm (width x length x thickness), and the thickness of the adhesive layer was 500 ⁇ m. It was set as. Both the upper glass and the lower glass are coated with silicon nitride.
- Light transmittance (%) The composition was coated on the cleaned glass substrate to about 10 ⁇ m ⁇ 2 ⁇ m and then UV cured (100 mW / cm 2 X 10 seconds) to prepare a film (thickness: 9 ⁇ m ⁇ 2 ⁇ m). Visible light transmittance in the wavelength range of 550 nm was measured with a Lambda 950 (Perkin elmer) instrument for the prepared film.
- A is the ratio of the intensity of the absorption peak in the vicinity of 1635 cm ⁇ 1 to the intensity of the absorption peak in the vicinity of 1720 cm ⁇ 1 for the cured film
- B is in the vicinity of 1720 cm ⁇ 1 for the photocurable composition. Is the ratio of the intensity of the absorption peak in the vicinity of 1635 cm ⁇ 1 to the intensity of the absorption peak.
- the composition for encapsulation of the present invention has a high adhesion to the inorganic barrier layer containing silicon nitride and the like, high photocuring rate, it can implement a reliable barrier layer.
- composition for encapsulation of Comparative Examples 1 to 3 which does not contain a carboxylic acid group-containing photocurable monomer, has low adhesion to the inorganic barrier layer and a low photocuring rate, and thus could not realize the effect of the present invention.
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Abstract
Description
실시예 | 비교예 | |||||||||||
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 1 | 2 | 3 | ||
A | A1 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 | 20 |
A2 | 65 | 65 | 65 | 65 | 60 | 60 | 60 | 60 | 75 | 70 | 65 | |
A3 | - | - | - | - | 5 | 5 | 5 | 5 | - | 5 | 10 | |
B | B1 | 10 | - | - | - | 10 | - | - | - | - | - | - |
B2 | - | 10 | - | - | - | 10 | - | - | - | - | - | |
B3 | - | - | 10 | - | - | - | 10 | - | - | - | - | |
B4 | - | - | - | 10 | - | - | - | 10 | - | - | - | |
C | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | 5 |
실시예 | 비교예 | ||||||||||
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 1 | 2 | 3 | |
접착력(kgf/(mm)2) | 38.5 | 42.6 | 36.8 | 42.5 | 42.5 | 46.5 | 38.1 | 48.2 | 11 | 13.5 | 15 |
광투과율(%) | 96.1 | 95.4 | 95.8 | 95.6 | 96.2 | 95.7 | 94.1 | 95.8 | 96.3 | 95.3 | 95.1 |
광경화율(%) | 93.2 | 92.4 | 93.3 | 92.5 | 94.5 | 93.6 | 94.5 | 93.3 | 83 | 87.5 | 89.8 |
Claims (15)
- (A) 광경화성 모노머 및 (B) 카르복시산기 포함 광경화성 모노머를 포함하고,상기 (B) 카르복시산기 포함 광경화성 모노머는 아마이드 결합을 갖는 봉지용 조성물.
- 제1항에 있어서, 상기 (B) 카르복시산기 포함 광경화성 모노머는 고리화된(cyclized) 단일 결합 또는 이중 결합을 갖는 카르복시산기를 갖는 모노머를 포함하는 봉지용 조성물.
- 제1항에 있어서, 상기 (B) 카르복시산기 포함 광경화성 모노머는 하기 화학식 1로 표시되는 봉지용 조성물:[화학식 1](상기에서, R1은 수소, 치환 또는 비치환된 탄소수 1 내지 20의 알킬기이고,R2는 치환 또는 비치환된 탄소수 1 내지 30의 알킬렌기, 치환 또는 비치환된 탄소수 6 내지 30의 아릴렌기, 탄소수 5 내지 20의 시클로알킬렌기이고,R3은 치환 또는 비치환된 탄소수 1 내지 30의 알킬렌기, 치환 또는 비치환된 탄소수 6 내지 30의 아릴렌기, 치환 또는 비치환된 탄소수 6 내지 30의 헤테로원자를 갖는 아릴렌기, 또는 탄소수 5 내지 20의 시클로알킬렌기이고,X는 -O-, -S- 또는 -NR-(상기 R은 수소, 탄소수 1 내지 10의 알킬기이다) 이다).
- 제1항에 있어서, 상기 광경화성 모노머는 치환 또는 비치환된 비닐기, 아크릴레이트기, 또는 메타아크릴레이트기를 1개 내지 30개 갖는 모노머를 포함하는 봉지용 조성물.
- 제1항에 있어서, 상기 광경화성 모노머는 탄소수 1 내지 20의 알킬기를 갖는 (메타)아크릴레이트, 탄소수 2 내지 20의 디올의 디(메타)아크릴레이트, 탄소수 3 내지 20의 트리올의 트리(메타)아크릴레이트, 탄소수 4 내지 20의 테트라올의 테트라(메타)아크릴레이트, -(-Y-O-)n-와 -Y-(상기에서, Y는 선형 또는 분지형의 탄소수 1 내지 5의 알킬렌기, n은 1 내지 5의 정수이다) 단위 중 하나 이상을 갖는 디(메타)아크릴레이트 중 하나 이상을 포함하는 봉지용 조성물.
- 제1항에 있어서, 상기 조성물은 고형분 기준으로상기 (A) 약 70 중량% 내지 약 95중량%; 상기 (B) 약 5 중량% 내지 약 30중량%를 포함하는 봉지용 조성물.
- 제1항에 있어서, 상기 조성물은 (C) 광중합 개시제를 더 포함하는 봉지용 조성물.
- 제8항에 있어서, 상기 조성물은 고형분 기준으로상기 (A) 약 20 중량% 내지 약 95 중량%; 상기 (B) 약 1 중량% 내지 약 60 중량%; 및 상기 (C) 약 0.1 중량% 내지 약 20 중량%를 포함하는 봉지용 조성물.
- 제1항 내지 제9항 중 어느 한 항의 봉지용 조성물의 경화물을 포함하는 장벽층.
- 장치용 부재; 및상기 장치용 부재 위에 형성되고, 무기 장벽층과 유기 장벽층을 포함하는 장벽 스택(barrier stack)을 포함하고,상기 유기 장벽층은 상기 무기 장벽층에 대한 부착력이 약 20 kgf/(mm)2 내지 약 100 kgf/(mm)2인 봉지화된 장치.
- 제11항에 있어서, 상기 유기 장벽층은 제1항 내지 제9항 중 어느 한 항의 봉지용 조성물의 경화물을 포함하는 봉지화된 장치.
- 제11항에 있어서, 상기 무기 장벽층은 금속, 금속 산화물, 금속 질화물, 금속 탄화물, 금속 산소질화물, 금속 산소붕소화물, 또는 이들의 혼합물을 포함하고, 상기 금속은 실리콘(Si), 알루미늄(Al), 셀레늄(Se), 아연(Zn), 안티몬(Sb), 인듐(In), 게르마늄(Ge), 주석(Sn), 비스무트(Bi), 전이금속, 란탄족 금속 중 하나 이상을 포함하는 봉지화된 장치.
- 제11항에 있어서, 상기 유기 장벽층 하나의 두께는 약 0.1 ㎛ 내지 약 20 ㎛, 상기 무기 장벽층 하나의 두께는 약 5 nm 내지 약 500 nm인 봉지화된 장치.
- 제11항에 있어서, 상기 장치용 부재는 유기발광소자, 플렉시블(flexible) 유기발광소자, 조명 장치, 금속 센서 패드, 마이크로디스크 레이저, 전기변색 장치, 광변색장치, 마이크로전자기계 시스템, 태양전지, 집적 회로, 전하 결합 장치, 발광 중합체 또는 발광 다이오드를 포함하는 봉지화된 장치.
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US14/653,653 US9598582B2 (en) | 2012-12-26 | 2013-07-31 | Encapsulating composition, barrier layer including same, and encapsulated apparatus including same |
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JP2015551054A JP2016509620A (ja) | 2012-12-26 | 2013-07-31 | 封止用組成物、それを含む障壁層およびそれを含む封止化された装置 |
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JP (1) | JP2016509620A (ko) |
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JP2016509620A (ja) | 2016-03-31 |
US9598582B2 (en) | 2017-03-21 |
CN104884528A (zh) | 2015-09-02 |
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