WO2014097963A1 - Film conducteur transparent à base d'oxyde de zinc - Google Patents

Film conducteur transparent à base d'oxyde de zinc Download PDF

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WO2014097963A1
WO2014097963A1 PCT/JP2013/083350 JP2013083350W WO2014097963A1 WO 2014097963 A1 WO2014097963 A1 WO 2014097963A1 JP 2013083350 W JP2013083350 W JP 2013083350W WO 2014097963 A1 WO2014097963 A1 WO 2014097963A1
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atoms
titanium
atom
aluminum
gallium
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PCT/JP2013/083350
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English (en)
Japanese (ja)
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邦彦 中田
翔平 堀田
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住友化学株式会社
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Priority to CN201380066128.1A priority Critical patent/CN104871257B/zh
Priority to KR1020157014306A priority patent/KR20150097478A/ko
Priority to JP2014553101A priority patent/JPWO2014097963A1/ja
Publication of WO2014097963A1 publication Critical patent/WO2014097963A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a zinc oxide-based transparent conductive film having high transmittance in the infrared region and useful for applications such as solar cells.
  • the transparent conductive film is a film having both visible light transmittance and electrical conductivity, and is used in a wide range of fields such as solar cells, liquid crystal display elements, and electrodes of light receiving elements.
  • an ITO film in which tin oxide is added to indium oxide called In 2 O 3 system is a sputtering method, an ion plating method, a pulse laser deposition (PLD) method, an electron beam (EB) evaporation method, Manufactured and used by film forming methods such as spraying.
  • PLD pulse laser deposition
  • EB electron beam
  • zinc oxide films such as ZnO-based AZO in which aluminum is added to zinc oxide and GZO in which gallium is added to zinc oxide.
  • These transparent conductive materials such as In 2 O 3 and ZnO are n-type semiconductors, and carrier electrons exist, and their movement contributes to electrical conduction. Carrier electrons in such an oxide transparent conductive film reflect or absorb infrared rays. Therefore, these films are oxide transparent conductive films having a high carrier electron concentration, and are excellent in plasma absorption due to carrier electron concentration, reflection absorption characteristics at wavelengths in the near infrared region, and the like. Therefore, these films are also used as heat-reflective films used for automobile window glass, window glass for buildings, various antistatic films, and transparent heating elements for anti-fogging such as refrigeration showcases.
  • oxide transparent conductive films have been used for solar cells, photodetecting elements, and the like.
  • the transmittance in the visible region but also the transmittance in the near-infrared region is regarded as important, so the zinc oxide film is not the best material for these applications.
  • the biggest problem of solar cells is the conversion efficiency. In order to improve the conversion efficiency, it is important how sunlight in the near-infrared region that is not sufficiently utilized can be used.
  • Non-patent Documents 1 and 2 Non-patent Documents 1 and 2. That is, as the carrier electron concentration increases, the near infrared transmittance decreases.
  • the carrier electron concentration is required to be 4.0 ⁇ 10 20 cm ⁇ 3 or less, preferably 3.8 ⁇ 10 20 cm ⁇ 3 or less.
  • an n-type semiconductor such as zinc oxide is mainly governed by ionized impurity scattering, grain boundary scattering, neutral impurity scattering, etc.
  • impurities contained in an ionic state are ionized impurities, Impurities that are adsorbed by excess oxygen and are contained in a neutral state are referred to as neutral impurities
  • neutral impurities Impurities that are adsorbed by excess oxygen and are contained in a neutral state.
  • Non-patent Documents 3 and 4 Even when a zinc oxide-based material is used, it is possible to manufacture a film with a low carrier electron concentration, that is, a film with a high near-infrared transmittance, by forming a film by increasing the amount of oxygen introduced during sputtering. .
  • neutral impurities due to oxygen increase, and the mobility decreases significantly. Therefore, not only the carrier electron concentration but also the mobility is lowered, and the specific resistance is increased.
  • Non-Patent Documents 5 to 9 Assuming that the mobility is mainly governed by ionized impurity scattering, the mobility is proportional to the ⁇ 2/3 power of the carrier electron concentration, so the mobility should increase as the carrier electron concentration decreases.
  • Non-Patent Documents 5 to 9 the mobility decreases as the carrier electron concentration decreases, and as a result, the specific resistance increases. This is presumably because ionized impurity scattering is not the dominant factor, and neutral impurity scattering or grain boundary scattering affects the specific resistance.
  • Non-Patent Document 10 describes a zinc-oxide-based transparent conductive film doped with boron. This film has a carrier electron concentration of 2 ⁇ 10 20 cm ⁇ 3 , a mobility of 60 cm 2 / Vs, and a specific resistance. It is described that it is 4 ⁇ 10 ⁇ 4 ⁇ ⁇ cm.
  • Non-Patent Documents 11 and 12 describe zinc oxide-based transparent conductive films doped with aluminum, and these films have a mobility of 40 to 67 cm 2 / Vs and a specific resistance of 3.8 ⁇ 10 ⁇ 4. It is described that it is below ⁇ ⁇ cm.
  • the film of Non-Patent Document 10 doped with boron is inferior in chemical durability and cannot withstand practical use.
  • the films of Non-Patent Documents 11 and 12 doped with aluminum have a low aluminum doping amount and are poor in chemical durability. Further, the film of Non-Patent Document 12 is formed with a silicon barrier layer, and the manufacturing process becomes complicated.
  • Patent Document 1 describes a zinc oxide-based transparent conductive film having improved chemical durability and transparency in the near-infrared region.
  • the transparent conductive film of Patent Document 1 has improved chemical durability and transparency in the near-infrared region, it is 7.4 even when the specific resistance is the lowest when calculated from the sheet resistance and film thickness. ⁇ 10 ⁇ 4 to 8.0 ⁇ 10 ⁇ 4 ⁇ ⁇ cm. This is a value too high for use as a transparent conductive film.
  • An object of the present invention is to provide a zinc oxide-based transparent conductive film that has excellent transparency even in the near infrared region (800 to 2500 nm), low resistance, and excellent chemical durability (moisture heat resistance and heat resistance). It is to provide.
  • the ratio of the total number of titanium atoms, gallium atoms and aluminum atoms ((titanium atom number + gallium atom number + aluminum atom number) / (zinc atom number + titanium atom number + gallium atom number + aluminum atom number) ) ⁇ 100) is 1.3% or more and 2.0% or less, and the number of titanium atoms is at least 5 with respect to the total number of titanium atoms
  • % A and is a carrier electron density is 3.60 ⁇ 10 20 cm -3 or less, the mobility is at 43.0cm 2 / Vs or more, and a specific resistance at 5.00 ⁇ 10 -4 ⁇ ⁇ cm or less
  • a zinc oxide-based transparent conductive film is a zinc oxide-based transparent conductive film.
  • M Titanium atom, titanium atom and gallium atom, titanium atom and aluminum atom, or titanium atom and gallium atom and aluminum atom (2) In total number of zinc atoms, titanium atoms, gallium atoms and aluminum atoms The ratio of the total number of titanium atoms, gallium atoms and aluminum atoms ((titanium atoms + gallium atoms + aluminum atoms) / (zinc atoms + titanium atoms + gallium atoms + aluminum atoms) The zinc oxide-based transparent conductive film according to (1), wherein the number) ⁇ 100) is 1.3% or more and 1.9% or less.
  • a sintered body containing a zinc atom, an oxygen atom, and M defined below, the number of zinc atoms and the number of oxygen atoms with respect to the total number of atoms constituting the sintered body The total number of titanium atoms, gallium atoms, and aluminum atoms is 99% or more, and the total number of zinc atoms, titanium atoms, gallium atoms, and aluminum atoms contained in the sintered body Ratio of total number of titanium atoms, gallium atoms and aluminum atoms to (number of titanium atoms + number of gallium atoms + number of aluminum atoms) / (number of zinc atoms + number of titanium atoms + number of gallium atoms + aluminum atoms Number) ⁇ 100) is 1.3% or more and 2.0% or less, and the number of titanium atom
  • L * a * b * b * is 0.00 or more in a color system
  • the sintered body L * is at 46.00 below.
  • M Titanium atom, titanium atom and gallium atom, titanium atom and aluminum atom, or titanium atom and gallium atom and aluminum atom (5) In total number of atoms of zinc atom, titanium atom number, gallium atom number and aluminum atom number Ratio of the total number of titanium atoms, gallium atoms and aluminum atoms ((titanium atoms + gallium atoms + aluminum atoms) / (zinc atoms + titanium atoms + gallium atoms + aluminum atoms) ) ⁇ 100) is 1.3% or more and 1.9% or less, and the sintered body according to (4).
  • the source is any of the following (i) to (iv): (I) at least one titanium source selected from the group consisting of low-valent titanium oxide, titanium black, titanium carbide, and titanium nitride; (Ii) a mixture comprising the titanium source and at least one gallium source selected from the group consisting of gallium oxide and gallium nitride; (Iii) a mixture comprising the titanium source and at least one aluminum source selected from the group consisting of aluminum oxide, aluminum carbide, and aluminum nitride; (Iv) a mixture comprising the titanium source, the gallium source, and the aluminum source; And hot press sintering the raw material in the mold for 2 to 5 hours at a temperature of 900 to 1200 ° C.
  • the total of the number of zinc atoms, the number of oxygen atoms, the number of titanium atoms, the number of gallium atoms, and the number of aluminum atoms is 99% or more with respect to the total number of atoms contained in the bond, Ratio of total number of titanium atoms, number of gallium atoms and number of aluminum atoms to total number of zinc atoms, number of titanium atoms, number of gallium atoms and number of aluminum atoms ((number of titanium atoms + number of gallium atoms + Number of aluminum atoms) / (number of zinc atoms + number of titanium atoms + number of gallium atoms + number of aluminum atoms) ⁇ 100) is 1.3% or more and 2.0% or less, and the number of titanium atoms contained in the sintered body Method for producing a sintered body number titanium atoms is at least 50% of the total number of atom
  • M Titanium atom, titanium atom and gallium atom, titanium atom and aluminum atom, or titanium atom, gallium atom and aluminum atom (7)
  • Sintered body containing zinc atom, oxygen atom and M defined below
  • the M source is any of the following (i) to (iv): (I) at least one titanium source selected from the group consisting of low-valent titanium oxide, titanium black, titanium carbide, and titanium nitride; (Ii) a mixture comprising the titanium source and at least one gallium source selected from the group consisting of gallium oxide and gallium nitride; (Iii) a mixture comprising the titanium source and at least one aluminum source selected from the group consisting of aluminum oxide, aluminum carbide, and aluminum nitride; (Iv) a mixture comprising the titanium source, the gallium source, and the aluminum source; And a step of performing discharge plasma sintering of the raw material in the die at a temperature of
  • the total of the number of zinc atoms, the number of oxygen atoms, the number of titanium atoms, the number of gallium atoms and the number of aluminum atoms is 99% or more, and the number of zinc atoms, titanium atoms, and gallium contained in the sintered body Ratio of the total number of titanium atoms, the number of gallium atoms and the number of aluminum atoms to the total number of atoms and the number of aluminum atoms ((titanium atom number + gallium atom number + aluminum atom number) / (zinc atom number + The number of titanium atoms + the number of gallium atoms + the number of aluminum atoms) ⁇ 100) is 1.3% or more and 2.0% or less, and the number of titanium atoms, gallium atoms and aluminum contained in the sintered body Method for producing a sintered body number titanium atom
  • M Titanium atom, titanium atom and gallium atom, titanium atom and aluminum atom, or titanium atom, gallium atom and aluminum atom (8)
  • a sintered body containing a zinc atom, an oxygen atom and M defined below
  • a raw material containing a zinc source and an M source is filled in a metal capsule so that the filling rate of the raw material is 50% or more
  • the M source is the following: (I) to (iv) (I) at least one titanium source selected from the group consisting of low-valent titanium oxide, titanium black, titanium carbide, and titanium nitride; (Ii) a mixture comprising the titanium source and at least one gallium source selected from the group consisting of gallium oxide and gallium nitride; (Iii) a mixture comprising the titanium source and at least one aluminum source selected from the group consisting of aluminum oxide, aluminum carbide, and aluminum nitride; (Iv) a mixture comprising the titanium source, the gallium source, and the aluminum source;
  • the total of the number of zinc atoms, the number of oxygen atoms, the number of titanium atoms, the number of gallium atoms, and the number of aluminum atoms is 99% or more with respect to the total number of atoms contained in the sintered body,
  • the ratio of the total number of titanium atoms, gallium atoms and aluminum atoms to the total number of zinc atoms, titanium atoms, gallium atoms and aluminum atoms contained in ((titanium atoms + gallium atoms Number + aluminum atom) / (zinc atom number + titanium atom number + gallium atom number + aluminum atom number) ⁇ 100) is 1.3% or more and 2.0% or less, and titanium atoms contained in the sintered body
  • the number of titanium atoms is at least 50% with respect to the total number of atoms, the number of gallium atoms and the number of aluminum atoms.
  • M titanium atom, titanium atom and gallium atom, titanium atom and aluminum atom, or titanium atom and gallium atom and aluminum atom (9) Total number of atoms of the zinc atom number, titanium atom number, gallium atom number and aluminum atom number Ratio of the total number of titanium atoms, gallium atoms and aluminum atoms ((titanium atoms + gallium atoms + aluminum atoms) / (zinc atoms + titanium atoms + gallium atoms + aluminum) The production method according to any one of (6) to (8), wherein the number of atoms) ⁇ 100) is 1.3% or more and 1.9% or less.
  • a zinc oxide comprising a step of subjecting the sintered body according to (4) or (5) above to a sputtering method, an ion plating method or an electron beam evaporation method to form a zinc oxide-based transparent conductive film Of forming transparent transparent conductive film.
  • a transparent conductive substrate comprising the zinc oxide-based transparent conductive film according to any one of (1) to (3) on a transparent substrate.
  • the light absorption layer is made of at least one selected from CuInSe 2 , CuInS 2 , CuGaSe 2 , CuGaS 2 and their solid solutions, and CdTe. battery.
  • the first electrode layer and the second electrode layer at least the second electrode layer comprises the zinc oxide-based transparent conductive film according to any one of (1) to (3).
  • the zinc oxide-based transparent conductive film according to the present invention is excellent in transparency in the near infrared region (800 to 2500 nm), has low resistance, and is excellent in chemical durability (moisture heat resistance and heat resistance). . Therefore, when the zinc oxide-based transparent conductive film according to the present invention is used in, for example, a solar cell, solar energy in the near-infrared region, which could not be used conventionally, can be used with high efficiency, from light energy to electrical energy. A solar cell with high conversion efficiency can be obtained.
  • the zinc oxide-based transparent conductive film of the present invention has a carrier electron concentration of 3.60 ⁇ 10 20 cm ⁇ 3 or less, a mobility of 43.0 cm 2 / Vs or more, and 5.00 ⁇ 10 ⁇ 4 ⁇ ⁇ cm or less. Has specific resistance. As described above, in order not to reduce the transmission of near-infrared rays, the carrier electron concentration needs to be 4.0 ⁇ 10 20 cm ⁇ 3 or less. Conventional ITO films, AZO films, GZO films, etc. have low resistance, but usually absorb electron near-infrared having a wavelength of 1000 nm or more because the carrier electron concentration is 6.0 ⁇ 10 20 cm ⁇ 3 or more. Or reflection, and the transmittance is very low.
  • the carrier electron concentration is 3.60 ⁇ 10 20 cm ⁇ 3 or less.
  • the zinc oxide-based transparent conductive film of the present invention preferably has a carrier electron concentration of 3.30 ⁇ 10 20 cm ⁇ 3 or less, more preferably 3.10 ⁇ 10 20 cm ⁇ 3 or less.
  • the zinc oxide-based transparent conductive film of the present invention has a carrier electron concentration as low as 3.60 ⁇ 10 20 cm ⁇ 3 or less, but has a high mobility of 43.0 cm 2 / Vs or more. Since the mobility of the conventional ITO film is about 20 to 30 cm 2 / Vs, it can be seen that the zinc oxide-based transparent conductive film of the present invention has a large mobility. Thus, the zinc oxide-based transparent conductive film of the present invention has a large mobility of 43.0 cm 2 / Vs or more even when the carrier electron concentration is as low as 3.60 ⁇ 10 20 cm ⁇ 3 or less.
  • the specific resistance is 5.00 ⁇ 10 ⁇ 4 ⁇ ⁇ cm or less, and the resistance is low.
  • the zinc oxide-based transparent conductive film of the present invention is a zinc oxide-based transparent conductive film containing zinc atoms, oxygen atoms, and M defined below, with respect to the total number of atoms constituting the film,
  • the total number of zinc atoms, oxygen atoms, titanium atoms, gallium atoms and aluminum atoms is 99% or more, and the number of zinc atoms, titanium atoms, gallium atoms and aluminum contained in the film
  • Ratio of total number of titanium atoms, number of gallium atoms and number of aluminum atoms to total number of atoms ((titanium atom number + gallium atom number + aluminum atom number) / (zinc atom number + titanium atom number) + Gallium atom number + aluminum atom number) ⁇ 100) is 1.3% or more and 2.0% or less, with respect to the total atom number of titanium atom, gallium atom and aluminum atom contained in the film
  • a number Tan atoms least 50%, the carrier electron
  • the ratio of the total number of titanium atoms, the number of gallium atoms and the total number of aluminum atoms to the total number of zinc atoms, titanium atoms, gallium atoms and aluminum atoms contained in the zinc oxide-based transparent conductive film of the present invention Is preferably 1.3% or more and 1.9% or less, and more preferably 1.4% or more and 1.9% or less.
  • the number of titanium atoms relative to the total number of titanium atoms, gallium atoms and aluminum atoms contained in the zinc oxide-based transparent conductive film of the present invention is preferably 55% or more.
  • the zinc oxide-based transparent conductive film is also required to have chemical durability (wet heat resistance and heat resistance). Even in a zinc oxide-based transparent conductive film having the same specific resistance, a film with a low carrier electron concentration and a high mobility has a lower plasma absorption than a film with a high carrier electron concentration and a low mobility. High permeability. The carrier electron concentration tends to fluctuate because the amount of oxygen vacancies fluctuates due to changes in external temperature and humidity, or is trapped in adsorbed oxygen, adsorbed water, and the like. On the other hand, mobility is the ease of movement of electrons and is not easily affected by changes in the external world. Therefore, the specific resistance of the transparent conductive film is less affected by changes in the external environment when it depends on the mobility than on the carrier electrons.
  • the zinc oxide-based transparent conductive film of the present invention has a chemical durability superior to the chemical durability of the conventional zinc oxide-based transparent conductive film made of AZO or GZO even if the titanium doping amount is reduced ( (Heat and heat resistance and heat resistance).
  • the doping amount is the optimum doping amount (in the case of aluminum, the doping amount is 2.0% (atomic ratio), and in the case of gallium, the doping amount is 4.4% (atomic ratio)). Even if it is decreased, the mobility is dominated by neutral impurity scattering and grain boundary scattering, so the mobility never increases. However, in the case of titanium doping, even if the total doping amount is 2.0% or less (atomic ratio), the mobility is not affected by neutral impurity scattering and grain boundary scattering, and is governed only by ionized impurity scattering. . In the case of titanium dope, a very high mobility is exhibited when the doping amount is around 1.5%.
  • the mobility began to decrease only when the doping amount was further reduced due to the effects of neutral impurity scattering and grain boundary scattering.
  • the total doping amount is in the range of 1.3% to 2.0%, the same behavior is exhibited even when titanium and aluminum, titanium and gallium, or titanium, aluminum, and gallium co-doping (in the coexistence state). I also found.
  • the number of atoms of titanium is at least 50% with respect to the total number of atoms of titanium, gallium and aluminum.
  • the zinc oxide-based transparent conductive film of the present invention is a zinc oxide-based transparent conductive film containing zinc atoms, oxygen atoms, and M defined below, with respect to the total number of atoms constituting the film,
  • the total number of zinc atoms, oxygen atoms, titanium atoms, gallium atoms and aluminum atoms is 99% or more, and the number of zinc atoms, titanium atoms, gallium atoms and aluminum contained in the film
  • Ratio of total number of titanium atoms, number of gallium atoms and number of aluminum atoms to total number of atoms ((titanium atom number + gallium atom number + aluminum atom number) / (zinc atom number + titanium atom number) + Gallium atom number + aluminum atom number) ⁇ 100) is 1.3% or more and 2.0% or less, with respect to the total atom number of titanium atom, gallium atom and aluminum atom contained in the film Number Tan atoms is at least 50%.
  • the zinc oxide-based transparent conductive film of the present invention transmits even in the near infrared region (800 to 2500 nm). Excellent resistance, low resistance, and excellent chemical durability (moisture and heat resistance and heat resistance).
  • the zinc oxide-based transparent conductive film of the present invention has a tin atom, silicon atom, germanium atom, zirconium atom, hafnium atom, indium atom, iridium atom, ruthenium atom, rhenium atom, chromium atom, manganese atom, iron atom as a trace atom.
  • Niobium atom, tantalum atom, scandium atom, yttrium atom, lanthanum atom, and boron atom may be included. Since these atoms are contained as trace atoms, the total number of these atoms is preferably 0.1% or less based on the total amount of all metal atoms constituting the transparent conductive film.
  • the zinc oxide-based transparent conductive film of the present invention is obtained by subjecting the sintered body of the present invention described later to, for example, a sputtering method, an ion plating method, a pulse laser deposition (PLD) method, an electron beam (EB) vapor deposition method, and the like. Formed.
  • Film formation by sputtering is performed as follows. First, a substrate and a target (a sputtering target) are placed in a sputtering apparatus. Next, by heating the substrate at a predetermined temperature in an argon inert gas atmosphere containing oxygen gas and applying an electric field between the substrate and the target to generate plasma between the target and the substrate, A thin film is formed on the substrate.
  • the film formation by the ion plating method is performed as follows. First, a substrate and a target (ion plating tablet) are placed in a copper hearth of an ion plating apparatus. Next, the substrate is heated at a predetermined temperature in an argon inert gas atmosphere containing oxygen gas, and the target is evaporated from the copper hearth using an electron gun. Next, a thin film is formed on the substrate by generating plasma near the substrate and ionizing the target vapor.
  • the structure and crystallinity of the zinc oxide-based transparent conductive film depend on film formation conditions such as target composition, substrate heating temperature, oxygen partial pressure in an inert gas atmosphere, and film formation speed. Although the above-described method is an example, the zinc oxide-based transparent conductive film of the present invention can be obtained in this manner.
  • the sintered body of the present invention is a sintered body containing zinc atoms, oxygen atoms, and M defined below, the number of zinc atoms with respect to the total number of atoms constituting the sintered body, The total number of oxygen atoms, titanium atoms, gallium atoms, and aluminum atoms is 99% or more, and the sintered body contains zinc atoms, titanium atoms, gallium atoms, and aluminum atoms.
  • the ratio of the total number of titanium atoms, gallium atoms, and aluminum atoms to the total number of atoms ((titanium atoms + gallium atoms + aluminum atoms) / (zinc atoms + titanium atoms + gallium atoms) Number + aluminum atom number) ⁇ 100) is 1.3% or more and 2.0% or less, and titanium atoms with respect to the total number of titanium atoms, gallium atoms and aluminum atoms contained in the sintered body Small number Both is 50% and a relative density of 96.5% or more, L * a * b * b * is 0.00 or more in a color system, L * is a sintered body which is 46.00 or less.
  • M Titanium atom, titanium atom and gallium atom, titanium atom and aluminum atom, or titanium atom, gallium atom and aluminum atom
  • the ratio of the total number of titanium atoms, the number of gallium atoms and the number of aluminum atoms to the total number of zinc atoms, titanium atoms, gallium atoms and aluminum atoms contained in the sintered body of the present invention is 1 It is preferably from 3% to 1.9%, and more preferably from 1.4% to 1.9%.
  • the number of titanium atoms with respect to the total number of titanium atoms, gallium atoms and aluminum atoms contained in the sintered body of the present invention is preferably 55% or more.
  • the relative density of the sintered body of the present invention is 96.5% or more, and preferably 97% or more, more preferably 98% from the viewpoint of suppressing the mechanical strength and arcing (abnormal discharge) of the sintered body. That's it.
  • the upper limit of the relative density is 100%.
  • the relative density is a value obtained by the following method.
  • the relative density in this specification is the ratio of the density of the sintered body actually obtained to the theoretical density.
  • the sintering temperature when the sintered body is produced by the method described later is important. In either method, if the sintering temperature is increased, the relative density is expected to increase. However, if the sintering temperature is excessively increased, the zinc source is reduced to metal zinc. Since metallic zinc has a melting point of 470 ° C., it volatilizes at the sintering temperature. Since the part in which the metallic zinc has volatilized becomes porous, the obtained sintered body has a low density.
  • the sintering temperature capable of suppressing the reduction of zinc oxide and increasing the density is preferably 1000 ° C.
  • a powder having an average primary particle size of 0.2 ⁇ m to 5 ⁇ m In general, the smaller the average primary particle size, the larger the specific surface area and the easier the sintering, but secondary aggregation becomes easier.
  • b * in the L * a * b * color system measured in the CIE 1976 space is 0.00 or more and L * is 46.00 or less.
  • the L * a * b * color system (JIS Z8729) is a color space based on the xyz color system, the L * value represents lightness, a * and b * are chromaticity coordinates, It represents saturation together.
  • a * is an axis from red to green, + a * represents the red direction, and -a * represents the green direction.
  • b * is an axis from yellow to blue, + b * represents the yellow direction, and -b * represents the blue direction.
  • L * is 46.00 or less, more preferably 45.00 or less, and still more preferably 43.00 or less.
  • b * is 0.00 or more, more preferably 1.00 or more.
  • a color difference meter is used for these measurements. Specifically, it is measured by the following method. First. A sample whose (L *, a *, b *) in the L * a * b * color system is known is used as a standard sample, and (L *, a *, b *) is measured with the standard sample before measuring the sample. Measure to see if it matches the known value. After confirming that the measured value matches the known value, the sample is measured. The surface roughness of the surface to be measured is 0.5 ⁇ m or less. If necessary, the surface of the sample is polished.
  • a zinc source and a raw material containing an M source are used.
  • the zinc source is a substance that serves as a source for providing zinc atoms contained in the sintered body
  • the M source is a substance that serves as a source for providing M contained in the sintered body.
  • the M source is any one of the following (i) to (iv).
  • At least one titanium source selected from the group consisting of low-valent titanium oxide, titanium black, titanium carbide, and titanium nitride;
  • a mixture comprising the titanium source and at least one gallium source selected from the group consisting of gallium oxide and gallium nitride;
  • a mixture comprising the titanium source and at least one aluminum source selected from the group consisting of aluminum oxide, aluminum carbide, and aluminum nitride;
  • the raw material is usually a powder, a granulated product obtained by granulating the powder, or a molded product obtained by molding the powder or the granulated product.
  • the calcined powder can also be used as a raw material.
  • Temporary baking is a method of baking a powder at 900 to 1300 ° C. in a non-oxidizing atmosphere.
  • the granulated product is produced, for example, by the following method.
  • the powder raw material and the aqueous solvent are mixed, and the resulting slurry is sufficiently mixed by wet mixing.
  • the mixture is separated into solid and liquid, and the resulting solid is dried and granulated.
  • the wet mixing may be performed by, for example, a wet ball mill using a hard ZrO 2 ball or a vibration mill, and the mixing time when the wet ball mill or vibration mill is used is preferably about 12 to 78 hours.
  • the powder raw material may be dry mixed as it is, but wet mixing is more preferable. Known methods may be employed for solid-liquid separation, drying, and granulation.
  • the granulation method is not particularly limited, and includes spray drying granulation.
  • the average particle size of the granulated product is usually several ⁇ m to 1000 ⁇ m.
  • Examples of the method for producing a molded product from the granulated product include a press molding method, a method such as cold isostatic pressing (CIP) molding, a casting molding method, and an injection molding method.
  • CIP cold isostatic pressing
  • the granulated product is put into a mold and press-molded, it can be molded at 500 kg / cm 2 to 3.0 ton / cm 2 .
  • cold forming machines such as a cold press and a cold isostatic press, it can shape
  • a binder When manufacturing a molded object from a granulated material, it is preferable to mix a binder with a powder, when manufacturing a granulated material.
  • the binder include polyvinyl alcohol, acrylic polymer, methyl cellulose, vinyl acetate, waxes, oleic acid and the like.
  • Zinc source includes zinc oxide and zinc hydroxide.
  • zinc oxide ZnO having a wurtzite structure or the like is usually used, and ZnO obtained by firing this ZnO in advance in an inert atmosphere or a reducing atmosphere to cause oxygen deficiency may be used.
  • Zinc hydroxide may be amorphous or may have a crystal structure.
  • the average primary particle size of the powder is preferably 5 ⁇ m or less, more preferably 1.5 ⁇ m or less.
  • the titanium source is selected from the group consisting of low valence titanium oxide, titanium black, titanium carbide and titanium nitride. Two or more types may be selected from the group. Generally speaking, titanium oxide is TiO 2 (IV) in which the valence of titanium is tetravalent. Low-valent titanium oxide is titanium oxide having titanium whose valence is lower than tetravalence. Examples of the low valence titanium oxide include TiO (II) and Ti 2 O 3 (III). The titanium source is preferably TiO (II), titanium carbide, or a mixture thereof. When powder is used as the titanium source, the average primary particle size of the powder as the titanium source is not particularly limited, but is preferably 2 ⁇ m or less, more preferably 1 ⁇ m or less.
  • the gallium source is at least one selected from the group consisting of gallium oxide and gallium nitride.
  • the aluminum source is at least one selected from the group consisting of aluminum oxide, aluminum carbide, and aluminum nitride.
  • the average primary particle size of the powder is not particularly limited, but is preferably 2 ⁇ m or less, more preferably 1 ⁇ m or less.
  • the mixing ratio of the zinc source and the M source may be appropriately set so that the finally obtained sintered body satisfies the following requirements.
  • the requirement is that the total number of zinc atoms, oxygen atoms, titanium atoms, gallium atoms, and aluminum atoms is 99% or more with respect to the total number of atoms contained in the sintered body,
  • the ratio of the total number of titanium atoms, gallium atoms and aluminum atoms to the total number of zinc atoms, titanium atoms, gallium atoms and aluminum atoms contained in the sintered body ((titanium atoms Number + gallium atom number + aluminum atom number) / (zinc atom number + titanium atom number + gallium atom number + aluminum atom number) ⁇ 100) is 1.3% or more and 2.0% or less.
  • the number of titanium atoms is at least 50% with respect to the total number of titanium atoms, gallium atoms and aluminum atoms contained.
  • the ease of volatilization of zinc varies depending on the atmosphere during sintering.
  • the zinc oxide when used, only the zinc oxide itself is volatilized when sintered in an air atmosphere or an oxidizing atmosphere, but when sintered in an inert or reducing atmosphere, the zinc oxide is reduced and zinc oxide Since it becomes metal zinc which is more easily volatilized than that, the disappearance amount of zinc increases. Therefore, the amount of the zinc source to be increased with respect to the target composition may be set in consideration of the sintering atmosphere. In the case of sintering in an inert atmosphere or a reducing atmosphere, a zinc source in an amount of about 1.05 to 1.2 times the amount that provides the desired atomic ratio may be used.
  • the sintered body of the present invention is produced by the following method (1), (2) or (3).
  • (1) The process of putting the raw material into the mold and hot press sintering the raw material in the mold for 2 to 5 hours at a temperature of 900 to 1200 ° C. and a pressure of 20 MPa to 50 MPa in a vacuum or in an inert atmosphere.
  • Including the step of: (2) A method comprising a step of putting a raw material into a die and a step of performing discharge plasma sintering of the raw material in the die at a temperature of 900 to 1200 ° C. and a pressure of 20 MPa to 50 MPa for 5 to 30 minutes.
  • the hot press method is a method in which a predetermined amount of raw material is put into a carbon die, sandwiched between carbon punches, and uniaxially pressed at 900 to 1200 ° C. in vacuum or in an inert gas atmosphere such as Ar. And a sintering method in which the entire carbon punch is heated.
  • the pressure during sintering is 20 MPa to 50 MPa, and the sintering time is 2 to 5 hours.
  • molding and sintering can be performed simultaneously.
  • the method (2) will be described.
  • SPS method spark plasma sintering method
  • a predetermined amount of raw material is put in a carbon die and sandwiched between carbon punches, set in a discharge plasma sintering (SPS) apparatus, and in a vacuum or an inert gas atmosphere such as Ar.
  • SPS discharge plasma sintering
  • This is a method of performing discharge plasma sintering.
  • the sintering temperature is 900 to 1200 ° C.
  • the pressure is 20 MPa to 50 MPa
  • the sintering time is 5 to 30 minutes.
  • the SPS method can simultaneously perform molding and sintering.
  • the SPS device consists of a sintering machine body with a vertical uniaxial pressurizing mechanism, a special energizing mechanism with a built-in water cooling unit, a water cooling vacuum chamber, an atmosphere control mechanism, a vacuum exhaust device, a special DC pulse power supply, a centralized operation control panel It is configured.
  • a die / punch mold filled with raw materials is placed on the sintering stage in the chamber, sandwiched between electrodes, and pulsed while applying pressure, depending on the size of the carbon die and carbon punch, it may take several minutes to several tens.
  • the temperature is rapidly raised from room temperature to a predetermined temperature in minutes. Therefore, if this apparatus is used, it is possible to obtain a high-density sintered body in a short time.
  • the hot isostatic pressing method is a method in which a high temperature and an isotropic high pressure are added to the raw material, and the raw material is sintered using a synergistic effect of the high temperature and high pressure.
  • the HIP method includes a capsule method and a capsule free method.
  • the capsule HIP method capsule HIP process which is the method of the present invention will be described.
  • the raw material is filled into a metal capsule so that the filling rate is 50% or more. By setting the raw material filling rate to 50% or more, the capsule itself is less likely to be damaged by the applied pressure during the capsule HIP process.
  • the filling rate is the ratio of the raw material filling amount to the theoretical density of the obtained sintered body, assuming that the sintered body has reached the theoretical density after capsule HIP, and is represented by the following formula.
  • Filling rate (%) 100 ⁇ (filling amount of raw material / theoretical density of sintered body)
  • the capsule filled with the raw material is subjected to a vacuum deaeration process.
  • the vacuum deaeration process is performed, for example, by exhausting from an exhaust pipe connected to the capsule and reducing the pressure in the capsule (evacuation).
  • evacuation After depressurization (evacuation), a He leak test is performed to check the soundness (no leaks) of the capsule weld.
  • Depressurization (evacuation) is performed until the pressure in the capsule is usually 1.33 ⁇ 10 ⁇ 2 Pa or less while heating the capsule filled with the raw material. Thereafter, the exhaust pipe connected to the capsule is closed and sealed.
  • the gas, adsorbed moisture, etc. adhering to the raw material can be sufficiently removed by the vacuum degassing treatment.
  • the heating temperature is preferably about 100 to 600 ° C.
  • the capsule that has been vacuum degassed is processed using an HIP device.
  • Capsule HIP treatment is performed in a sintering process using a high-temperature and high-pressure gas as a pressure medium at 900 to 1400 ° C. and 50 MPa or more for 1 to 4 hours.
  • the gas used as the pressure medium include an inert gas that does not react with the capsule, and is preferably nitrogen or argon.
  • cooling is preferably 200 ° C./hour or less, more preferably 150 ° C./hour or less, and even more preferably 100 ° C./hour or less. Cool the capsule at speed. According to Boyle Charles's law, the pressure decreases as the temperature decreases. Therefore, when the capsule is rapidly cooled, the pressure is also rapidly decreased, and the sintered body is likely to be cracked or cracked. When the temperature in the HIP device falls to 200 ° C. or lower, degassing in the HIP device is performed, and the pressure in the capsule is returned to atmospheric pressure.
  • oxygen deficiency occurs in the sintered body, so that the specific resistance decreases.
  • the atmosphere when performing the annealing treatment include the above-described vacuum, inert atmosphere, or reducing atmosphere.
  • a method of the annealing treatment for example, a method of heating the sintered body at normal pressure while introducing a non-oxidizing gas such as nitrogen, argon, helium, carbon dioxide, hydrogen, or under vacuum (preferably 2 Pa or less) And a method of heating the sintered body. From the viewpoint of production cost, a method of carrying out at normal pressure while introducing a non-oxidizing gas is advantageous.
  • the annealing temperature is preferably 1000 to 1400 ° C., more preferably 1100 to 1300 ° C.
  • the annealing time is preferably 7 to 15 hours, more preferably 8 to 12 hours.
  • oxygen deficiency due to the annealing treatment may be insufficient.
  • the annealing temperature exceeds 1400 ° C., zinc tends to be volatilized and the composition of the obtained sintered body (Zn The atomic ratio between Ti and Ti may be different from the desired ratio.
  • the sintered body of the present invention is used as a target in various film forming methods.
  • it is used as a target in sputtering, ion plating, pulsed laser deposition (PLD), or electron beam (EB) vapor deposition.
  • PLD pulsed laser deposition
  • EB electron beam
  • target solid material used in the film formation
  • the sintered body before processing Distinguish is also a form of the sintered body, the “sintered body” in the claims of the present application includes the target.
  • the method for processing the sintered body is not particularly limited, and a known method may be adopted as appropriate.
  • the target after subjecting the sintered body to surface grinding or the like, the target can be obtained by cutting the sintered body into a predetermined size and attaching it to a support base. If necessary, a large area target (composite target) may be formed by arranging a plurality of divided sintered bodies.
  • the target is used for film formation by sputtering, ion plating, PLD, or EB vapor deposition.
  • the sputtering method examples include a DC sputtering method, an RF sputtering method, an AC sputtering method, a DC magnetron sputtering method, an RF magnetron sputtering method, and an ion beam sputtering method.
  • the DC sputtering method is preferable in that a large-area film can be manufactured uniformly and at high speed.
  • the temperature of the substrate used at the time of sputtering is not particularly limited, and is affected by the heat resistance of the substrate.
  • it is usually preferably 250 ° C. or lower, and when a resin film is used as the substrate, 150 ° C. or lower is usually preferable.
  • the film can be formed at a temperature higher than that.
  • the zinc oxide-based transparent conductive film of the present invention formed using the sintered body of the present invention has excellent conductivity, not only in the visible region (400 to 800 nm) but also in the near infrared region (800 to 2500 nm). It also has excellent light transmission and has chemical durability (moisture and heat resistance and heat resistance). Therefore, transparent electrodes such as liquid crystal displays, plasma displays, inorganic EL (electroluminescence) displays, organic EL displays, and electronic paper; window electrodes of photoelectric conversion elements of solar cells; electrodes of input devices such as transparent touch panels; It can be used in combination with other metal films / metal oxide films as an electromagnetic shielding film; a transparent radio wave absorber; an ultraviolet absorber; and a transparent semiconductor device.
  • transparent electrodes such as liquid crystal displays, plasma displays, inorganic EL (electroluminescence) displays, organic EL displays, and electronic paper; window electrodes of photoelectric conversion elements of solar cells; electrodes of input devices such as transparent touch panels; It can be used in combination with other
  • the zinc oxide-based transparent conductive film of the present invention for solar cells, solar energy in the near-infrared region, which has been insufficient with the prior art, can be effectively used, and solar with high photoelectric conversion efficiency.
  • a battery can be provided.
  • the zinc oxide-based transparent conductive film of the present invention is excellent not only in the visible region (400 to 800 nm), but also in the near infrared region (800 to 2500 nm), has low resistance, and is chemically durable. Therefore, it is suitably used as a material for solar cells (for example, compound solar cells, silicon solar cells).
  • a compound solar cell is usually a heterojunction between a compound semiconductor thin film having a wide band gap (an intermediate layer made of an n-type semiconductor) and a compound semiconductor thin film having a narrow band gap (a light absorption layer made of a p-type semiconductor). It is configured.
  • the n-type semiconductor is used as the intermediate layer and the p-type semiconductor is used as the light absorption layer because there is almost no p-type semiconductor thin film having a wide band gap (> 2.4 eV) suitable for the intermediate layer of the solar cell. This is because the diffusion length of minority carriers is longer for electrons.
  • the conditions required to obtain higher energy conversion efficiency are the optimal optical design to obtain more photocurrent, high quality heterojunction without carrier recombination at the interface or especially the absorbing layer and It is to make a thin film.
  • High-quality heterointerface the deep relationship the combination of the intermediate layer and the light absorbing layer, CdS / CdTe based, CdS / CuInSe 2 type, CdS / Cu (In, Ga ) Se 2 type in such, are useful heterojunctions can get.
  • a light absorbing layer made of a p-type semiconductor, an intermediate layer made of an n-type semiconductor, an n-type on a substrate provided with an electrode layer or a metal substrate having electrode properties A window layer made of a semiconductor and a transparent conductive film layer made of the zinc oxide-based transparent conductive film are laminated in this order.
  • the substrate include a polyimide substrate, a glass substrate, and a stainless steel substrate.
  • a transparent electrode layer made of the zinc oxide-based transparent conductive film, a window layer made of an n-type semiconductor, and an intermediate made of an n-type semiconductor are formed on a transparent substrate.
  • a layer, a light absorption layer made of a p-type semiconductor, and a metal electrode are laminated in this order.
  • the transparent substrate include a polyimide substrate and a glass substrate.
  • Examples of the material for forming the light absorption layer made of a p-type semiconductor include CuInSe 2 , CuInS 2 , CuGaSe 2 , CuGaS 2 and their solid solutions, CdTe, and the like. Furthermore, since CuZnS 2 , CuSnS 2 , CuZnSe 2 , CuSnSe 2 and their solid solutions do not contain rare metals such as indium and gallium, they are expected to be applied to next-generation solar cells.
  • Examples of the material for forming the intermediate layer made of an n-type semiconductor include CdS, In 2 S 3 , In (S, OH) x, and the like.
  • Examples of the material for forming the window layer made of an n-type semiconductor include ZnO and Zn (O, S, OH) x .
  • silicon solar cells are classified into single crystal silicon solar cells, polycrystalline silicon solar cells, microcrystalline silicon solar cells, amorphous silicon solar cells, etc., depending on the silicon crystal system used in the light absorption layer.
  • a first electrode layer, a light absorption layer, and a second electrode layer are laminated in this order, and a photovoltaic power is generated by light incident from the second electrode layer side.
  • at least the second electrode layer of the first electrode layer and the second electrode layer is made of the zinc oxide-based transparent conductive film of the present invention.
  • the first electrode layer and the light absorption layer are not particularly limited.
  • a substrate is used for laminating the first electrode layer, the light absorption layer, and the second electrode layer.
  • the substrate include a polyimide substrate, a glass substrate, and a stainless steel substrate.
  • the first electrode layer for example, a metal film electrode made of silver, aluminum, copper, molybdenum or the like is used.
  • a conductive oxide layer such as a zinc oxide thin film or a tin oxide thin film to which gallium or the like is added may be used alone or in combination with these metal film electrodes. Of course, you may use the zinc oxide type transparent conductive film of this invention.
  • the light absorption layer is preferably made of amorphous silicon, polycrystalline silicon, or microcrystalline silicon. If necessary, a metal comb electrode made of, for example, silver, aluminum, copper, or molybdenum may be formed on the second electrode layer.
  • a p-type semiconductor (p-layer), an i-type semiconductor (i-layer), and an n-type are sequentially formed from the second electrode layer side where light enters.
  • Examples include a photoelectric conversion unit in which semiconductors (n layers) are stacked (first embodiment).
  • Examples of the material for the p layer include hydrogenated amorphous silicon carbide (a-SiC: H).
  • Examples of the material for the i layer include hydrogenated amorphous silicon (a-Si: H), crystalline silicon (c-Si), microcrystalline silicon ( ⁇ c-Si), and hydrogenated amorphous silicon germanium (a-SiGe: H). .
  • hydrogenated amorphous silicon (a-Si: H) is preferable.
  • Examples of the n-layer material include hydrogenated amorphous silicon (a-Si: H) and microcrystalline silicon ( ⁇ c-Si). Among these, hydrogenated amorphous silicon (a-Si: H) is preferable.
  • a tandem electromotive layer in which another pin layer is further formed on the a-Si pin layer is preferably used.
  • the layers formed on the pin layer of amorphous silicon (a-Si) are an a-Si: H layer as a p layer, a microcrystalline Si layer as an i layer, and an a-layer as an n layer.
  • a-Si amorphous silicon
  • tandem electromotive layer for the photoelectric conversion layer, it is possible to photoelectrically convert not only short wavelengths but also light on the long wavelength side. Therefore, the tandem structure is added to the substrate with the zinc oxide-based transparent conductive film of the present invention. If the electromotive layer is used, the effect of improving the photoelectric conversion efficiency becomes clearer than in the case of using the conventional AZO that absorbs light on the long wavelength side.
  • the said 1st Embodiment is an example of the substrate type silicon type solar cell which provided the back surface electrode in the board
  • this embodiment is another general structure of a silicon type solar cell.
  • the present invention can also be appropriately applied to a super straight type that takes light into the light absorption layer from the substrate side.
  • a transparent substrate such as a glass substrate as the substrate and use the zinc oxide-based transparent conductive film of the present invention as the first electrode layer.
  • the first embodiment is applied to various forms of conventionally known silicon-based solar cells, for example, a form in which a p-type semiconductor layer and an n-type semiconductor layer are stacked in order from the first electrode layer side. You can also
  • an n-type semiconductor layer, an i-type semiconductor layer, single crystal or polycrystalline silicon, an i-type semiconductor layer, and a p-type semiconductor layer are stacked in this order from the first electrode layer side.
  • a photoelectric conversion unit (second embodiment).
  • a solar cell in which this type of photoelectric conversion unit is used is referred to as a heterojunction solar cell.
  • an i-type semiconductor layer and an n-type semiconductor layer are sequentially formed on one surface (non-light-receiving portion side) of single crystal or polycrystalline silicon, and the first layer is formed on the n-type semiconductor layer.
  • 1 electrode layer is formed.
  • An i-type semiconductor layer and a p-type semiconductor layer are sequentially formed on the other surface (on the light-receiving portion side) of single crystal or polycrystalline silicon, and the oxidation of the present invention is performed as a second electrode layer on the p-type semiconductor layer.
  • a zinc-based transparent conductive film is formed.
  • a metal comb electrode may be formed on the second electrode layer as in the first embodiment.
  • examples of the electrode material for the back electrode layer include metals containing Ag or Ag alloy, Al or Al alloy as a main component.
  • the back electrode layer is made of a metal film containing 95 mol% or more of crystalline Ag in the film.
  • Examples of single crystal or polycrystalline silicon include an n-type silicon wafer and a p-type silicon wafer.
  • the first electrode layer, the n-type semiconductor, the i-type semiconductor, and the p-type semiconductor in the second embodiment are the same as those in the first embodiment.
  • the method for forming each layer and the thickness of each layer in each of the above embodiments are not particularly limited, and a conventionally known method may be appropriately performed.
  • the sheet resistance required for the transparent conductive film for solar cells is about 10 ⁇ / ⁇ .
  • Solar cells are typically used in the form of integrated modules with solar cells connected in series. For this reason, the sheet resistance required for the transparent conductive film is preferably lower when it is a single cell.
  • an area loss is generated depending on the number of serially connected cells. . The area loss increases as the number of cells connected in series increases. Further, Joule loss due to contact resistance between the transparent conductive film and the back electrode also occurs. This also increases because the number of contact parts increases as the number of series connection stages increases.
  • the above-mentioned area loss and the Joule loss due to the contact resistance between the transparent conductive film and the back electrode are larger than the Joule loss due to the transparent conductive film, and the sheet resistance of the transparent conductive film is about 10 ⁇ / ⁇ . Even if the sheet resistance of the transparent conductive film is smaller than this, the influence on the conversion efficiency of the solar cell is negligible. Area loss and Joule loss due to contact resistance between the transparent conductive film and the back electrode are dominant factors.
  • the zinc oxide-based transparent conductive film (AZO) currently used has a film thickness dependency of specific resistance. As the film thickness increases, the specific resistance decreases, and the specific resistance gradually decreases to about 500 nm. Even if the film is saturated at 500 nm and the film thickness is increased further, the specific resistance takes a constant value. Since AZO has a film thickness dependency of specific resistance, at least a film thickness of 500 nm is necessary to realize about 10 ⁇ / ⁇ . Therefore, in the zinc oxide-based transparent conductive film, the sheet resistance is 10 ⁇ / ⁇ or less at a film thickness of 500 nm.
  • the sheet resistance at a film thickness of 500 nm is preferably 10 ⁇ / ⁇ or less, and more preferably 9 ⁇ / ⁇ or less.
  • the zinc oxide-based transparent conductive film of the present invention has excellent chemical durability (moisture and heat resistance and heat resistance), and solar cells using such a transparent conductive film also have excellent chemical durability. Properties (moisture and heat resistance and heat resistance).
  • the compound type solar cell and the silicon type solar cell have been described as examples as the solar cell, the chalcopyrite solar cell, the organic solar cell using an organic material, and the like are also used as the electrode layer on the light receiving unit side. You may employ
  • Example and the comparative example evaluation of the physical property performed in the Example and the comparative example is as follows.
  • ⁇ Resistivity> The specific resistance was measured by a four-terminal four-probe method using a resistivity meter (“LORESTA-GP, MCP-T610” manufactured by Mitsubishi Chemical Corporation). Specifically, four needle-shaped electrodes are placed on a sample in a straight line, a constant current is passed between the outer two probes and the inner two probes, and the potential difference generated between the inner two probes is measured. And asked for resistance.
  • ⁇ Surface resistance> The surface resistance ( ⁇ / ⁇ ) was calculated by dividing the specific resistance ( ⁇ ⁇ cm) by the film thickness (cm). The film thickness was measured using “Alpha-Step IQ” manufactured by Tencor.
  • ⁇ Mobility and carrier electron concentration> The mobility and carrier electron concentration were measured by the HALL effect measurement method by the Van Der Pauw method. For the measurement, a probe whose tip was processed to 250 ⁇ m ⁇ was used using a HL5500 PC Hall effect measuring device manufactured by Nanometrics.
  • Relative density 100 ⁇ [(density of sintered body) / (theoretical density)]
  • the theoretical density was determined by the following method. First, the density of each component used for manufacturing the sintered body is multiplied by the ratio of the weight of the component when the total weight of each component used for manufacturing the sintered body is 1. This was calculated for all the components used, and the sum thereof was taken as the theoretical density.
  • the density of the sintered body was determined by the following method. The sintered body was processed into a rectangular or cylindrical shape so that an accurate volume could be measured. The volume and weight of the processed sintered body were measured.
  • this method may be referred to as a length measurement method.
  • the transmittance was measured using an ultraviolet-visible near-infrared spectrophotometer (“V-670” manufactured by JASCO Corporation) and in the visible region (400 nm to 800 nm) and the near infrared region (800 nm to 1400 nm and 800 nm to 2500 nm). Two ranges).
  • permeability of the transparent conductive substrate containing a glass substrate was measured.
  • ⁇ Heat resistance> The transparent conductive substrate was subjected to a heat resistance test for 2000 minutes in the atmosphere at a temperature of 300 ° C., and then the surface resistance was measured.
  • the surface resistance before the test was A
  • the surface resistance after the test was B
  • the value of (BA) / A was obtained in% units and used as an index of heat resistance. The larger the value, the greater the surface resistance after the test. A negative value indicates that the surface resistance after the test is smaller than that before the test. The smaller the value, the better the heat resistance.
  • Example 1 Zinc oxide powder (ZnO: manufactured by Hakusuitec Co., Ltd., purity 99.9%, average primary particle size 1 ⁇ m or less), and titanium monoxide powder (TiO (II): manufactured by Furuuchi Chemical Co., Ltd., purity 99.9%)
  • ZnO manufactured by Hakusuitec Co., Ltd., purity 99.9%, average primary particle size 1 ⁇ m or less
  • TiO (II) manufactured by Furuuchi Chemical Co., Ltd., purity 99.9%
  • 50 g of ethanol was added as a solvent, and wet mixed by a wet ball mill mixing method. This wet mixing was performed for 18 hours using hard ZrO 2 balls ( 2 mm ⁇ ) as balls.
  • the obtained mixed powder was put into a mold (die) made of graphite having a diameter of 100 mm. Vacuum pressing was performed at a pressure of 30 MPa with a punch made of graphite, and a heat treatment (hot pressing (HP) method) was performed at 1000 ° C. for 4 hours to obtain a disk-shaped sintered body.
  • the theoretical density of this sintered body was 5.59 g / cm 3 and the relative density was 97.9%.
  • the sintered body was subjected to surface grinding, peripheral grinding and surface polishing to obtain a disk-shaped oxide sintered body having a diameter of 80 mm and a thickness of 3 mm.
  • the obtained oxide sintered body was bonded with indium solder using a copper plate as a backing plate to obtain a sputtering target.
  • a zinc oxide-based transparent conductive film was formed on the substrate to have a film thickness of about 500 nm by sputtering under the following conditions. In sputtering for about 50 minutes, the number of times the operation of the sputtering apparatus was stopped due to abnormal discharge was within 3 times, the sputtering rate was 10 nm / min, and the film formation stability was good.
  • Target dimensions diameter 80mm, thickness 3mm Sputtering equipment: ULVAC, Inc., experimental small sputtering equipment CS-L Sputtering method: DC magnetron sputtering Ultimate vacuum: 1.0 ⁇ 10 ⁇ 4 Pa or less Sputtering gas: Argon Sputtering gas pressure: 1.0 Pa Substrate temperature: 200 ° C Deposition time: about 50 minutes Sputtering power: 200 W (3.98 W / cm 2 ) Substrate used: alkali-free glass (100 mm x 100 mm x 0.7 mm)
  • the obtained thin film was dissolved in commercially available concentrated hydrochloric acid diluted twice, and the thin film composition was analyzed by ICP-AES (Thermo Fisher Scientific Co., Ltd., Thermo-6500).
  • a thin film having almost the same composition as the target composition was obtained.
  • the transparent conductive film is subjected to X-ray diffraction using an attachment for thin film measurement using an X-ray diffractometer (RINT2000, manufactured by Rigaku Corporation) and an energy dispersive X-ray microanalyzer (TEM-EDX). ) was used to investigate the doping state of titanium into zinc, and the crystal structure was examined using a field emission electron microscope (FE-SEM). As a result, it was found that this was a wurtzite type single phase oriented in the C axis, and titanium was substituted and dissolved in zinc.
  • FE-SEM field emission electron microscope
  • the carrier electron concentration is 3.17 ⁇ 10 20 cm ⁇ 3
  • the mobility is 44.7 cm 2 / Vs
  • the specific resistance is 4.4 ⁇ 10 ⁇ 4 ⁇ ⁇ cm
  • the surface resistance is 9.
  • the resistance was 1 ⁇ / ⁇ (the resistance when the film thickness was 483 nm and the film thickness was 500 nm was 8.8 ⁇ / ⁇ ).
  • the obtained transparent conductive film was low resistance.
  • Table 2 The results are shown in Table 2.
  • the transmittance (including the glass substrate) of the obtained transparent conductive substrate was 82.1% on average in the visible region (400 nm to 800 nm), 80.8% on average in the near infrared region of 800 nm to 1400 nm, and 800 nm to The average was 53.6% in the near infrared region of 2500 nm.
  • the change in resistance in the heat and humidity resistance test was 12%.
  • the change in resistance in the heat resistance test was -7.1%, and the resistance value after the test was lower than that before the test. The results are shown in Table 2.
  • Example 2 The same zinc oxide powder and titanium monoxide powder as in Example 1 so as to have the raw material composition shown in Table 1, and the aluminum oxide powder has a purity of 99.9% and an average primary particle size of 0.5 ⁇ m
  • a sputtering target was obtained in the same procedure as in Example 1 except that raw material powder made of Al 2 O 3 powder manufactured by Co., Ltd. was used. Using the obtained sputtering target, a zinc oxide-based transparent conductive film was formed on the substrate to have a film thickness of about 500 nm by sputtering under the same conditions as in Example 1.
  • the number of times that the operation of the sputtering apparatus was stopped due to abnormal discharge was within 3 times, and the sputtering rate was about 10 nm / min. The property was good.
  • the thin film composition was analyzed in the same procedure as in Example 1. All the thin films had almost the same composition as the target composition.
  • Each thin film obtained was subjected to X-ray diffraction using an attachment for thin film measurement using an X-ray diffractometer (RINT2000, manufactured by Rigaku Corporation) in the same manner as in Example 1, and energy dispersive X
  • the state of titanium doping to zinc was examined using a line microanalyzer (TEM-EDX), and the crystal structure was examined using a field emission electron microscope (FE-SEM). As a result, it was found that all were C-axis oriented wurtzite type single phases, and titanium was substituted and dissolved in zinc.
  • the transparent conductive film on the obtained transparent conductive substrate carrier electron concentration, mobility, specific resistance, surface resistance, wet heat resistance and heat resistance were measured. The results are shown in Table 2. Furthermore, the transmittance
  • Examples 3, 4, 7 and 8 and Comparative Examples 1 to 11 The same raw material powder as that used in Example 1 or Example 2 was used so as to have the raw material composition shown in Table 1, and a sintered body was obtained by a discharge plasma sintering (SPS) method instead of the hot press method. Obtained a sputtering target in the same procedure as in Example 1.
  • the discharge plasma sintering was performed as follows. The obtained mixed powder was put into a mold (die) made of graphite, and pressed under a Ar atmosphere at a pressure of 30 MPa with a punch made of graphite having a diameter of 100 mm.
  • the temperature was raised from room temperature to the sintering temperature (1000 ° C.) in about 30 minutes, and an SPS (discharge plasma sintering) treatment was performed at 1000 ° C. for 15 minutes to obtain a disk-shaped sintered body.
  • a zinc oxide-based transparent conductive film was formed on the substrate to have a film thickness of about 500 nm by sputtering under the same conditions as in Example 1. Regardless of which sputtering target is used, in sputtering for about 50 minutes, the number of times that the operation of the sputtering apparatus was stopped due to abnormal discharge was within 3 times, and the sputtering rate was about 10 nm / min. The property was good.
  • the thin film composition was analyzed in the same procedure as in Example 1. All the thin films had almost the same composition as the target composition.
  • Each thin film obtained was subjected to X-ray diffraction using an attachment for thin film measurement using an X-ray diffractometer (RINT2000, manufactured by Rigaku Corporation) in the same manner as in Example 1, and energy dispersive X
  • the state of titanium doping to zinc was examined using a line microanalyzer (TEM-EDX), and the crystal structure was examined using a field emission electron microscope (FE-SEM). As a result, it was found that all were C-axis oriented wurtzite type single phases, and titanium was substituted and dissolved in zinc.
  • Example 5 instead of titanium monoxide powder, dititanium trioxide powder (Ti 2 O 3 (III): manufactured by Furuuchi Chemical Co., Ltd., purity 99.9%, average primary particle size 1 ⁇ m or less) was used, and hot pressing (HP) A sputtering target was obtained in the same procedure as in Example 2 except that a sintered body was obtained by the capsule HIP sintering method instead of the method. Capsule HIP sintering was performed as follows.
  • the raw material powder was dry-mixed at a ratio where the atomic ratio of Zn: Ti: Al was 98.2: 1.0: 0.8 to obtain a mixed powder.
  • the obtained mixed powder was heated from room temperature to 1200 ° C. at a temperature rising rate of 10 ° C./min in an inert atmosphere (Ar) and then calcined at 1200 ° C. for 10 hours.
  • the mixture was lightly pulverized by hand in a mortar to obtain a zinc oxide powder.
  • the tap density of the obtained zinc oxide-based powder was determined according to JIS K5101.
  • the zinc oxide powder is filled while applying vibration, and from the volume of the graduated cylinder (cm 3 ) and the filling amount of the zinc oxide powder (g) Asked.
  • the tap density of the obtained zinc oxide-based powder was 3.12 g / cm 3 .
  • the obtained zinc oxide-based powder was vibrated in a stainless steel (SUS304) container (outer diameter: 103 mm, inner diameter: 100 mm, height: 78 mm) until there was no volume change of the zinc oxide-based powder. While filling.
  • the tap density of the zinc oxide-based powder was 3.12 g / cm 3 , and the theoretical density was about 5.6 g / cm 3 , so the filling rate was about 55.7%.
  • the theoretical density was determined by the following formula.
  • Theoretical density (Zinc oxide density ⁇ Mixing mass ratio) + (Ditanium trioxide density ⁇ Mixing mass ratio) + (Aluminum oxide density ⁇ Mixing mass ratio)
  • the exhaust pipe was welded to the upper lid of the metal container, and then the upper lid and the metal container were welded.
  • a He leak test was performed. The amount of leakage at this time was 1 ⁇ 10 ⁇ 9 Pa ⁇ m 3 / sec or less.
  • the inside of the metal container is depressurized over 7 hours while being heated to 550 ° C., the inside of the metal container is confirmed to be 1.33 ⁇ 10 ⁇ 2 Pa or less, the exhaust pipe is closed, The container was sealed.
  • the sealed metal container was installed in a HIP device (manufactured by Kobe Steel, Ltd.) and subjected to capsule HIP treatment.
  • the capsule HIP treatment was performed at 1100 ° C. for 1 hour using argon (Ar) gas (purity 99.9%) at a pressure of 100 MPa as a pressure medium. After the HIP treatment, the metal container was removed to obtain a cylindrical zinc oxide-based sintered body.
  • the zinc oxide-based sintered body was subjected to surface grinding, peripheral grinding and surface polishing to obtain a disk-shaped oxide sintered body having a diameter of 80.0 mm and a thickness of 3 mm.
  • the obtained oxide sintered body was bonded with indium solder using a copper plate as a backing plate to obtain a sputtering target.
  • a zinc oxide-based transparent conductive film was formed on the substrate to have a film thickness of about 500 nm by sputtering under the same conditions as in Example 1.
  • the number of times the operation of the sputtering apparatus was stopped due to abnormal discharge was within 3 times, the sputtering rate was about 10 nm / min, and the film formation stability was good.
  • the obtained thin film when the thin film composition was analyzed in the same procedure as Example 1, it was substantially the same composition as the target composition.
  • the obtained thin film was subjected to X-ray diffraction using an attachment for thin film measurement using an X-ray diffractometer (RINT2000, manufactured by Rigaku Corporation) as in Example 1, and energy dispersive X-ray.
  • RINT2000 X-ray diffractometer
  • FE-SEM field emission electron microscope
  • Example 6 The same procedure as in Example 5 was performed except that a sintered body was obtained using titanium black powder (manufactured by Mitsubishi Materials Corporation: product number “13M”, primary particle size 97 nm) instead of dititanium trioxide powder. A sputtering target was obtained.
  • a zinc oxide-based transparent conductive film was formed on the substrate to have a film thickness of about 500 nm by sputtering under the same conditions as in Example 1.
  • the number of times the operation of the sputtering apparatus was stopped due to abnormal discharge was within 3 times, the sputtering rate was about 10 nm / min, and the film formation stability was good.
  • the obtained thin film when the thin film composition was analyzed in the same procedure as Example 1, it was substantially the same composition as the target composition.
  • the obtained thin film was subjected to X-ray diffraction using an attachment for thin film measurement using an X-ray diffractometer (RINT2000, manufactured by Rigaku Corporation) as in Example 1, and energy dispersive X-ray.
  • RINT2000 X-ray diffractometer
  • FE-SEM field emission electron microscope
  • Example 9 instead of titanium monoxide powder, titanium carbide powder (TiC: Nippon Shin Metal Co., Ltd., purity 99.9%, average particle size 0.9 to 1.5 ⁇ m) is used, and gallium oxide powder is used instead of aluminum oxide powder. (Ga 2 O 3 : manufactured by Sumitomo Chemical Co., Ltd., purity 99.9%, average particle size of 1 ⁇ m or less), except that the sintered body was obtained by the discharge plasma sintering method instead of the hot press method. A sputtering target was obtained in the same procedure as in Example 2. The conditions of the discharge plasma sintering method are the same as in Example 3.
  • a zinc oxide-based transparent conductive film was formed on the substrate to have a film thickness of about 500 nm by sputtering under the same conditions as in Example 1.
  • the number of times the operation of the sputtering apparatus was stopped due to abnormal discharge was within 3 times, the sputtering rate was about 10 nm / min, and the film formation stability was good.
  • the obtained thin film when the thin film composition was analyzed in the same procedure as Example 1, it was substantially the same composition as the target composition.
  • the obtained thin film was subjected to X-ray diffraction using an attachment for thin film measurement using an X-ray diffractometer (RINT2000, manufactured by Rigaku Corporation) as in Example 1, and energy dispersive X-ray.
  • RINT2000 X-ray diffractometer
  • FE-SEM field emission electron microscope
  • Example 10 A sputtering target was obtained in the same procedure as in Example 5 except that a sintered body was obtained using the raw material powder shown below.
  • Example 10 Titanium nitride powder (TiN: manufactured by Nippon Shin Metal Co., Ltd., product number “TiN-01”, average primary particle size: 1.0 to 1.5 ⁇ m) was used as the titanium source, and the gallium source was used. The gallium oxide powder used in Example 9 was used.
  • Example 11 The titanium monoxide powder used in Example 1 was used as the titanium source, and the aluminum source was aluminum carbide (Al 4 C 3 : manufactured by Kojundo Chemical Laboratory Co., Ltd., purity 99.9%, average A particle size of 0.5 ⁇ m) was used.
  • Example 12 Titanium trioxide powder used in Example 5 was used as the titanium source, and aluminum nitride (AlN: Wako Pure Chemical Industries, Ltd., purity 99.9%, average particle size 50 nm was used as the titanium source. ) was used.
  • Example 13 Titanium trioxide powder used in Example 5 was used as the titanium source, and gallium nitride (GaN: manufactured by Kojundo Chemical Laboratory Co., Ltd., purity 99.9%, average particle size as the titanium source. 0.5 ⁇ m) was used.
  • a zinc oxide-based transparent conductive film was formed on the substrate so as to have a film thickness of about 500 nm by the sputtering method under the same conditions as in Example 1. Regardless of which sputtering target is used, in sputtering for about 50 minutes, the number of times the operation of the sputtering apparatus is stopped due to abnormal discharge is within 3 times, the sputtering rate is about 10 nm / min, and film formation is stable. The property was good.
  • the thin film composition was analyzed in the same procedure as in Example 1. All the thin films had almost the same composition as the target composition.
  • Each thin film obtained was subjected to X-ray diffraction using an attachment for thin film measurement using an X-ray diffractometer (RINT2000, manufactured by Rigaku Corporation) in the same manner as in Example 1, and energy dispersive X
  • the state of titanium doping to zinc was examined using a line microanalyzer (TEM-EDX), and the crystal structure was examined using a field emission electron microscope (FE-SEM). As a result, it was found that all were C-axis oriented wurtzite type single phases, and titanium was substituted and dissolved in zinc.
  • the obtained thin film when the thin film composition was analyzed in the same procedure as Example 1, it was substantially the same composition as the target composition.
  • the obtained thin film was subjected to X-ray diffraction using an attachment for thin film measurement using an X-ray diffractometer (RINT2000, manufactured by Rigaku Corporation) as in Example 1, and energy dispersive X-ray.
  • RINT2000 X-ray diffractometer
  • FE-SEM field emission electron microscope
  • a zinc oxide-based transparent conductive film was formed on the substrate to have a film thickness of about 500 nm by sputtering under the same conditions as in Example 1.
  • the number of times the operation of the sputtering apparatus was stopped due to abnormal discharge was within 3 times, the sputtering rate was about 10 nm / min, and the film formation stability was good.
  • the obtained thin film when the thin film composition was analyzed in the same procedure as Example 1, it was substantially the same composition as the target composition.
  • the obtained thin film was subjected to X-ray diffraction using an attachment for thin film measurement using an X-ray diffractometer (RINT2000, manufactured by Rigaku Corporation) as in Example 1, and energy dispersive X-ray.
  • RINT2000 X-ray diffractometer
  • FE-SEM field emission electron microscope
  • a zinc oxide-based transparent conductive film was formed on the substrate so as to have a film thickness of about 500 nm. Regardless of which sputtering target is used, in sputtering for about 50 minutes, the number of times that the operation of the sputtering apparatus was stopped due to abnormal discharge was within 3 times, and the sputtering rate was about 10 nm / min. The property was good.
  • the films on the transparent conductive substrates obtained in Examples 1 to 13 have low resistance and excellent conductivity, high permeability in the near infrared region, and chemical durability. It is clear that this is a transparent conductive film having excellent properties (wet heat resistance and heat resistance).
  • Example 14 Production of compound thin film solar cell
  • a compound-based thin film solar cell 1 shown in FIG. 1 was produced by the following procedure. First, a zinc oxide-based transparent conductive film 15 having a thickness of about 500 nm was formed on the glass substrate 16 under the same film formation conditions as in Example 1 using the target obtained in Example 1. A ZnO thin film having a thickness of about 150 nm was formed as the window layer 14 on the zinc oxide-based transparent conductive film 15 by a direct current magnetron sputtering method (sputtering gas was argon) using a ZnO target.
  • sputtering gas was argon
  • a film having a thickness of about 50 nm is formed as an intermediate layer 13 made of an n-type semiconductor by a solution deposition method using a mixed solution of CdI 2 , NH 4 Cl, NH 3 and thiourea to form a hetero pn junction on the window layer 14.
  • a CdS thin film having a thickness was formed.
  • a CuInGaSe 2 thin film having a film thickness of about 2 to 3 ⁇ m was formed as the light absorption layer 12 made of a p-type semiconductor by vacuum deposition.
  • the Au thin film which has a film thickness of about 1 micrometer was formed as the back side metal electrode layer 11 by the vacuum evaporation method.
  • the compound-based thin film solar cell 1 thus obtained was irradiated with 100 mW / cm 2 of irradiation light with AM 1.5 (air mass 1.5) from the glass substrate 16 side, and the characteristics were examined.
  • the solar battery cell was held in an atmosphere at a temperature of 85 ° C. and a relative humidity of 85% for 1000 hours. After 1000 hours, although the transparent conductive film in the solar battery cell was slightly deteriorated, the conversion efficiency was measured so as not to affect the performance of the solar battery.
  • the compound-based thin film solar cell 1 has excellent wet heat resistance because the zinc oxide-based transparent conductive film of the present invention is used as the zinc oxide-based transparent conductive film 15, and further transmits in the near infrared region. It was found that the conversion efficiency from light energy to electrical energy is high.
  • Comparative Example 18 Preparation of compound thin film solar cell
  • a compound-based thin-film solar cell was obtained in the same procedure as in Example 14 except that the transparent conductive film was formed using AZO (target obtained in Comparative Example 16) instead of the zinc oxide-based transparent conductive film 15. .
  • the compound-based thin film solar cell thus obtained was examined for characteristics and wet heat resistance in the same manner as in Example 14. As compared with the compound-based thin film solar cell 1 obtained in Example 14, conversion from light energy to electrical energy was performed. The efficiency was very low and the heat and humidity resistance was greatly inferior.
  • Example 14 and Comparative Example 18 an example of a compound-based thin film solar cell using a CuInSe 2 thin film as a light absorbing layer was shown.
  • a light absorbing layer CuInS 2 , CuGaSe 2 , Cu (In, Ga) Se 2 .
  • Similar results were obtained using thin films of Cu (In, Ga) (S, Se) 2 and CdTe.
  • the solar cell having higher conversion efficiency and excellent chemical durability is obtained when the zinc oxide-based transparent conductive film according to the present invention is used than when the conventional zinc oxide-based transparent conductive film is used. It was found that can be manufactured.
  • Example 15 Production of solar battery cell (amorphous silicon solar battery)
  • a p-type layer, an i-type layer, and an n-type layer are formed in this order on the transparent conductive substrate obtained in Example 1 in this order, and a pin three-layer photoelectric conversion unit (light absorption layer) is formed.
  • a pin three-layer photoelectric conversion unit light absorption layer
  • N-type layer After the transparent conductive substrate on which the p-type layer and the i-type layer are formed is transported to the n-type silicon film forming chamber, a high-purity semiconductor gas of SiH 4 , H 2 and phosphine (PH 3 ) is formed into the i-type silicon film. It was introduced into the chamber at a constant flow rate. Discharge was started while maintaining the substrate temperature at 150 ° C. and the pressure at 0.2 Torr. A phosphorus-doped a-Si alloy film having a thickness of about 30 nm in 6 minutes was formed on the i-type layer. After the film formation was completed, the gas was exhausted again to be in a high vacuum state.
  • SiH 4 , H 2 and phosphine (PH 3 ) is formed into the i-type silicon film. It was introduced into the chamber at a constant flow rate. Discharge was started while maintaining the substrate temperature at 150 ° C. and the pressure at 0.2 Torr. A phosphorus-doped a-
  • a back surface reflective electrode layer was formed by the following procedure.
  • the transparent conductive substrate on which the pin three-layer photoelectric conversion unit was formed was cooled to room temperature, taken out into the atmosphere, and then placed in a sputtering vacuum apparatus.
  • a solar battery cell amorphous silicon solar battery
  • the solar battery cell was held in an atmosphere at a temperature of 85 ° C. and a relative humidity of 85% for 1000 hours. After 1000 hours, although the transparent conductive film in the solar battery cell was slightly deteriorated, the conversion efficiency was measured so as not to affect the performance of the solar battery.
  • the use of the zinc oxide-based transparent conductive film according to the present invention has higher conversion efficiency and superior chemical durability (moisture resistance) than the case of using the conventional zinc oxide-based transparent conductive film. It was found that a solar cell having heat resistance and heat resistance) and excellent long-term reliability can be manufactured.
  • the characteristics of the solar cell according to the present invention are superior to those of the conventional solar cell.
  • the zinc oxide-based transparent conductive film of the present invention has excellent chemical durability (moisture heat resistance and heat resistance) and has high transmittance in the near infrared region as well as in the visible region. This is thought to be due to the efficient conversion of the energy into electrical energy.
  • the zinc oxide-based transparent conductive film according to the present invention is excellent in transparency in the near infrared region (800 to 2500 nm), has low resistance, and is excellent in chemical durability (moisture heat resistance and heat resistance). . Therefore, when the zinc oxide-based transparent conductive film according to the present invention is used in, for example, a solar cell, solar energy in the near-infrared region, which could not be used conventionally, can be used with high efficiency, from light energy to electrical energy. A solar cell with high conversion efficiency can be obtained.

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Abstract

L'invention concerne un film conducteur transparent à base d'oxyde de zinc comprenant des atomes de zinc, des atomes d'oxygène et M comme défini ci-dessous, le nombre total d'atomes de zinc, d'atomes d'oxygène et d'atomes de titane, d'atomes de gallium et d'atomes d'aluminium représentant 99 % ou plus de la totalité des atomes formant le film conducteur transparent à base d'oxyde de zinc ; le ratio entre le nombre total d'atomes de titane, d'atomes de gallium et d'atomes d'aluminium et le nombre total d'atomes de zinc, d'atomes de titane, d'atomes de gallium et d'atomes d'aluminium contenus dans le film ((nombre d'atomes de titane + nombre d'atomes de gallium + nombre d'atomes d'aluminium)/(nombre d'atomes de zinc + nombre d'atomes de titane + nombre d'atomes de gallium + nombre d'atomes d'aluminium) x 100) est égal ou supérieur à 1,3 %, mais inférieur ou égal à 2,0 % ; Le nombre d'atomes de titane représente au moins 50 % du nombre total d'atomes de titane, d'atomes de gallium et d'atomes d'aluminium contenus dans le film ; la concentration d'électrons porteurs est inférieure ou égale à 3,60 x 1020cm-3, la mobilité est égale ou supérieure à 43,0 cm2/Vs et la résistivité est inférieure ou égale à 5,00 x 10-4Ω·cm. M représente les atomes de titane ; les atomes de titane et les atomes de gallium ; les atomes de titane et les atomes d'aluminium ; ou les atomes de titane, les atomes de gallium et les atomes d'aluminium.
PCT/JP2013/083350 2012-12-17 2013-12-12 Film conducteur transparent à base d'oxyde de zinc WO2014097963A1 (fr)

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