KR20150097478A - 산화아연계 투명 도전막 - Google Patents

산화아연계 투명 도전막 Download PDF

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Publication number
KR20150097478A
KR20150097478A KR1020157014306A KR20157014306A KR20150097478A KR 20150097478 A KR20150097478 A KR 20150097478A KR 1020157014306 A KR1020157014306 A KR 1020157014306A KR 20157014306 A KR20157014306 A KR 20157014306A KR 20150097478 A KR20150097478 A KR 20150097478A
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South Korea
Prior art keywords
atoms
titanium
gallium
atom
aluminum
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KR1020157014306A
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English (en)
Korean (ko)
Inventor
구니히코 나카타
쇼헤이 홋타
Original Assignee
스미또모 가가꾸 가부시끼가이샤
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Publication of KR20150097478A publication Critical patent/KR20150097478A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Human Computer Interaction (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
KR1020157014306A 2012-12-17 2013-12-12 산화아연계 투명 도전막 KR20150097478A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2012-274248 2012-12-17
JP2012274248 2012-12-17
JPJP-P-2013-174153 2013-08-26
JP2013174153 2013-08-26
PCT/JP2013/083350 WO2014097963A1 (fr) 2012-12-17 2013-12-12 Film conducteur transparent à base d'oxyde de zinc

Publications (1)

Publication Number Publication Date
KR20150097478A true KR20150097478A (ko) 2015-08-26

Family

ID=50978298

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157014306A KR20150097478A (ko) 2012-12-17 2013-12-12 산화아연계 투명 도전막

Country Status (5)

Country Link
JP (1) JPWO2014097963A1 (fr)
KR (1) KR20150097478A (fr)
CN (1) CN104871257B (fr)
TW (1) TW201435105A (fr)
WO (1) WO2014097963A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5949718B2 (ja) * 2013-09-30 2016-07-13 Tdk株式会社 スパッタリングターゲット
JP6372467B2 (ja) * 2014-10-15 2018-08-15 株式会社環境システムヤマノ 融雪装置
JP6709171B2 (ja) * 2014-12-09 2020-06-10 リンテック株式会社 透明導電膜及び透明導電膜の製造方法
JP6419572B2 (ja) * 2014-12-26 2018-11-07 浜松ホトニクス株式会社 光電面、光電変換管、イメージインテンシファイア、及び光電子増倍管
CN105294096B (zh) * 2015-10-16 2018-03-09 中国科学院上海硅酸盐研究所 一种低电阻氧化锌陶瓷材料及其制备方法
CN105355771B (zh) * 2015-10-16 2018-09-28 中国科学院上海硅酸盐研究所 一种高功率因子氧化锌热电材料及其制备方法
JP6134368B2 (ja) * 2015-10-19 2017-05-24 Ｊｘ金属株式会社 焼結体及び該焼結体からなるスパッタリングターゲット並びに該スパッタリングターゲットを用いて形成した薄膜
CN105669182A (zh) * 2016-01-05 2016-06-15 北京工业大学 一种用放电等离子烧结研究镓掺杂氧化锌陶瓷最佳烧结工艺的方法
WO2017122618A1 (fr) * 2016-01-15 2017-07-20 住友化学株式会社 Procédé de préparation d'un oxyde métallique composite amorphe
JP6888318B2 (ja) * 2016-03-23 2021-06-16 三菱マテリアル株式会社 積層透明導電膜、積層配線膜及び積層配線膜の製造方法
WO2017164209A1 (fr) * 2016-03-23 2017-09-28 三菱マテリアル株式会社 Film conducteur transparent stratifié, film de câblage stratifié, et procédé de fabrication d'un film de câblage stratifié
CN113666735B (zh) * 2021-09-10 2022-07-05 山东大学 连续调控氧化锌陶瓷光吸收性质的方法、氧化锌陶瓷及制备方法
CN116751032A (zh) * 2023-06-21 2023-09-15 深圳众诚达应用材料股份有限公司 一种zto靶材及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4808682B2 (ja) * 2007-08-03 2011-11-02 Ｊｘ日鉱日石金属株式会社 焼結体、透明導電膜の製造方法及び透明導電膜
WO2009116990A1 (fr) * 2008-03-17 2009-09-24 Midwest Research Institute Films minces au zno dopé de haute qualité
TW201013709A (en) * 2008-09-17 2010-04-01 Mitsui Mining & Smelting Co Zinc oxide group transparent conductive film and process for making same
JP5292130B2 (ja) * 2009-02-27 2013-09-18 太平洋セメント株式会社 スパッタリングターゲット
EP2497011A4 (fr) * 2009-11-06 2013-10-02 Semiconductor Energy Lab Panneau tactile et procédé de commande de panneau tactile
CN102762518A (zh) * 2010-02-18 2012-10-31 住友化学株式会社 氧化物烧结体、氧化物混合物、它们的制造方法以及使用它们的靶
JP2011184715A (ja) * 2010-03-05 2011-09-22 Sumitomo Chemical Co Ltd 酸化亜鉛系透明導電膜形成材料、その製造方法、それを用いたターゲット、および酸化亜鉛系透明導電膜の形成方法
JP5952031B2 (ja) * 2011-03-07 2016-07-13 住友化学株式会社 酸化物焼結体の製造方法およびターゲットの製造方法
JP2012195405A (ja) * 2011-03-16 2012-10-11 Sumitomo Chemical Co Ltd 酸化亜鉛を主成分とする透明導電膜を用いた太陽電池用透明導電性基板、その製造方法、およびこれに用いるターゲット
JP2012195501A (ja) * 2011-03-17 2012-10-11 Sumitomo Chemical Co Ltd 薄膜光電変換素子および太陽電池

Also Published As

Publication number Publication date
CN104871257B (zh) 2017-03-01
TW201435105A (zh) 2014-09-16
WO2014097963A1 (fr) 2014-06-26
CN104871257A (zh) 2015-08-26
JPWO2014097963A1 (ja) 2017-01-12

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