WO2014088201A1 - 발광 다이오드 및 그것의 어플리케이션 - Google Patents

발광 다이오드 및 그것의 어플리케이션 Download PDF

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Publication number
WO2014088201A1
WO2014088201A1 PCT/KR2013/009395 KR2013009395W WO2014088201A1 WO 2014088201 A1 WO2014088201 A1 WO 2014088201A1 KR 2013009395 W KR2013009395 W KR 2013009395W WO 2014088201 A1 WO2014088201 A1 WO 2014088201A1
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WIPO (PCT)
Prior art keywords
semiconductor layer
layer
transparent substrate
conductive semiconductor
light emitting
Prior art date
Application number
PCT/KR2013/009395
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English (en)
French (fr)
Korean (ko)
Inventor
채종현
이준섭
노원영
강민우
장종민
김현아
서대웅
Original Assignee
서울바이오시스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from KR1020120140991A external-priority patent/KR102013364B1/ko
Priority claimed from KR1020120155783A external-priority patent/KR102071036B1/ko
Priority claimed from KR1020130011453A external-priority patent/KR101984932B1/ko
Priority to CN201910265288.8A priority Critical patent/CN109979925B/zh
Priority to CN201910834913.6A priority patent/CN110600593B/zh
Priority to DE112013005849.9T priority patent/DE112013005849T5/de
Priority to CN201380072266.0A priority patent/CN105074941B/zh
Application filed by 서울바이오시스 주식회사 filed Critical 서울바이오시스 주식회사
Publication of WO2014088201A1 publication Critical patent/WO2014088201A1/ko
Priority to US14/733,787 priority patent/US9608171B2/en
Priority to US14/745,271 priority patent/US9536924B2/en
Priority to US14/745,284 priority patent/US9548425B2/en
Priority to US15/470,811 priority patent/US10497836B2/en
Priority to US16/660,460 priority patent/US10749080B2/en

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Definitions

  • the present invention relates to light emitting diodes and their applications, and more particularly to flip chip type light emitting diodes having improved directivity angles and their applications.
  • GaN-based LEDs Since the development of gallium nitride (GaN) -based light emitting diodes, GaN-based LEDs have been used in a variety of applications, including color LED display devices, LED traffic signals, backlight units, and lighting devices.
  • GaN gallium nitride
  • a gallium nitride-based light emitting diode is generally formed by growing epi layers on a substrate such as sapphire, and includes an N-type semiconductor layer, a P-type semiconductor layer, and an active layer interposed therebetween. Meanwhile, an N-electrode pad is formed on the N-type semiconductor layer, and a P-electrode pad is formed on the P-type semiconductor layer.
  • the light emitting diode is electrically connected to and driven by an external power source through electrode pads. At this time, current flows from the P-electrode pad to the N-electrode pad via the semiconductor layers.
  • a flip chip type light emitting diode is used to prevent light loss caused by the P-electrode pad and to improve heat dissipation efficiency. Since the flip chip type light emitting diode emits light through the growth substrate, light loss caused by the P-electrode pad can be reduced compared to the light emitting diode having a horizontal structure emitting light through the epi layer. Furthermore, since the light emitting diode having a horizontal structure must transfer heat through a growth substrate such as a sapphire substrate, heat radiation efficiency is low. In contrast, the flip chip type light emitting diode transmits heat through the electrode pads, and thus has high heat dissipation efficiency.
  • a light emitting diode having a vertical structure for removing a growth substrate such as sapphire from the epi layer has been developed.
  • the light emitting diode having the vertical structure may prevent light loss due to total internal reflection by texturing the exposed surface of the semiconductor layer.
  • the directing angle of the light source is an important concern.
  • the light emitting diode of the flip-chip structure generally has a direction angle of about 120 degrees
  • the light emitting diode of the vertical structure generally has a direction angle smaller than about 120 degrees by surface texturing. Accordingly, efforts have been made to increase the directing angle of light by using a molding part at a package level or by using a separately manufactured secondary lens.
  • LEDs having different directivity angle characteristics depending on the direction may be required.
  • the directing angle of the LEDs is large in a direction orthogonal to the rolling direction of the fluorescent lamp.
  • An object of the present invention is to provide a flip chip type light emitting diode suitable for a backlight unit or a surface lighting device and an application thereof.
  • Another object of the present invention is to provide a flip chip type light emitting diode which can improve light extraction efficiency by increasing reflectance.
  • Another object of the present invention is to provide a flip chip type light emitting diode having improved current spreading performance.
  • Another object of the present invention is to provide a light emitting diode having a different orientation angle characteristic according to a direction and a lighting device employing the same.
  • Another object of the present invention is to provide a flip chip type light emitting diode having an improved luminous efficiency and a lighting device having the same.
  • a light emitting diode comprising: a transparent substrate having a first surface, a second surface, and a side surface connecting the first surface and the second surface; A first conductivity type semiconductor layer on the first surface of the transparent substrate; A second conductivity type semiconductor layer on the first conductivity type semiconductor layer; An active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; A first pad electrically connected to the first conductive semiconductor layer; And a second pad electrically connected to the second conductivity type semiconductor layer.
  • light generated in the active layer is emitted to the outside of the transparent substrate through the second surface of the transparent substrate.
  • the light emitting diode has a directing angle of 140 degrees or more in at least one axial direction.
  • the light emitting diode according to the present embodiments has a relatively wide direct angle of 140 degrees or more without using a lens-shaped molding member or a secondary lens. Therefore, it is suitable for illuminating devices, such as a backlight unit and a surface illuminating device.
  • the light emitting diode according to the present embodiments may be directly applied to an application without performing a separate packaging process. Furthermore, the light emitting diode may be used without or in combination with a secondary lens.
  • the light emitting diode may further include a conformal coating layer covering the second surface of the transparent substrate. Light emitted from the second surface is emitted to the outside of the conformal coating layer through the conformal coating layer.
  • the conformal coating layer may contain phosphors and thus may wavelength convert at least some of the light generated in the active layer.
  • the sum of the thicknesses of the transparent substrate and the conformal coating layer may have a value within the range of 225 ⁇ m to 600 ⁇ m. Further, the thickness of the transparent substrate may have a value within the range of 150 ⁇ m 400 ⁇ m. In addition, the thickness of the conformal coating may have a value within the range of 20 ⁇ m to 200 ⁇ m.
  • the thickness of the transparent substrate may have a value in the range of 225 ⁇ m to 400 ⁇ m.
  • a flip chip light emitting diode having a directivity angle of 140 degrees or more can be provided regardless of the presence or absence of a conformal coating layer.
  • the thickness of the transparent substrate exceeds 400 ⁇ m, it is difficult to separate the substrate into individual light emitting diode chips.
  • the light emitting diode may further include a plurality of mesas spaced apart from each other on the first conductivity type semiconductor layer. Each mesa includes the active layer and the second conductive semiconductor layer.
  • the light emitting diodes may include: reflective electrodes positioned on the plurality of mesas and ohmic contact with a second conductive semiconductor layer; And openings covering the plurality of mesas and the first conductivity type semiconductor layer, the openings being located in the upper region of each mesa and exposing the reflective electrodes, ohmic contacting the first conductivity type semiconductor layer, and the plurality of mesas. It may further include a current spreading layer insulated from them. The first pad may be electrically connected to the current spreading layer, and the second pad may be electrically connected to the reflective electrodes through the openings.
  • the current spreading layer covers the plurality of mesas and the first conductivity type semiconductor layer, the current spreading performance is improved through the current spreading layer.
  • the first conductivity type semiconductor layer may be continuous.
  • the plurality of mesas may have an elongated shape extending in parallel to each other in one direction. Openings of the current spreading layer may be located at the same end side of the plurality of mesas. Therefore, a pad connecting the reflective electrodes exposed to the openings of the current spreading layer can be easily formed.
  • the current spreading layer may include a reflective metal such as Al. Accordingly, in addition to the light reflection by the reflective electrodes, the light reflection by the current spreading layer can be obtained, and thus, the light traveling through the plurality of mesas sidewalls and the first conductivity type semiconductor layer can be reflected.
  • the reflective electrodes may each include a reflective metal layer and a barrier metal layer. Further, the barrier metal layer may cover the top and side surfaces of the reflective metal layer. As a result, the reflective metal layer can be prevented from being exposed to the outside, and deterioration of the reflective metal layer can be prevented.
  • the light emitting diode includes: an upper insulating layer covering at least a portion of the current spreading layer and having openings exposing the reflective electrodes; And a second pad disposed on the upper insulating layer and connected to the reflective electrodes exposed through the openings of the upper insulating layer.
  • first pad and the second pad may be formed in the same shape and size, and thus flip chip bonding may be easily performed.
  • the light emitting diode may further include a lower insulating layer positioned between the plurality of mesas and the current spreading layer to insulate the current spreading layer from the plurality of mesas.
  • the lower insulating layer may have openings positioned in the upper mesas and exposing the reflective electrodes.
  • each of the openings of the current spreading layer may have a wider width than the openings of the lower insulating layer so that all of the openings of the lower insulating layer are exposed. That is, sidewalls of the openings of the current spreading layer are located on the lower insulating layer.
  • the light emitting diode may further include an upper insulating layer covering at least a portion of the current spreading layer and having openings exposing the reflective electrodes. The upper insulating layer may cover sidewalls of the openings of the current spreading layer.
  • the lower insulating layer may be a reflective dielectric layer, such as a distributed Bragg reflector (DBR).
  • DBR distributed Bragg reflector
  • a light emitting diode includes: a transparent substrate having a first surface, a second surface, and a side surface connecting the first surface and the second surface; A first conductivity type semiconductor layer on the first surface of the transparent substrate; A second conductivity type semiconductor layer on the first conductivity type semiconductor layer; An active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; A first pad electrically connected to the first conductive semiconductor layer; And a second pad electrically connected to the second conductivity type semiconductor layer.
  • the light generated in the active layer is emitted to the outside through the second surface of the transparent substrate, the thickness of the transparent substrate has a value in the range of 225 ⁇ m to 400 ⁇ m.
  • a light emitting diode comprising: a transparent substrate having a first surface, a second surface, and a side surface connecting the first surface and the second surface; A first conductivity type semiconductor layer on the first surface of the transparent substrate; A second conductivity type semiconductor layer on the first conductivity type semiconductor layer; An active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; A first pad electrically connected to the first conductive semiconductor layer; A second pad electrically connected to the second conductive semiconductor layer; And a conformal coating layer covering the transparent substrate.
  • the light generated in the active layer is emitted to the outside through the conformal coating layer, the sum of the thickness of the transparent substrate and the conformal coating has a value in the range of 225 ⁇ m to 600 ⁇ m.
  • the thickness of the transparent substrate may have a value within the range of 150 ⁇ m 400 ⁇ m.
  • the thickness of the conformal coating may have a value within the range of 20 ⁇ m to 200 ⁇ m.
  • An illumination module comprises a plurality of light emitting diodes, at least one light emitting diode having a first side, a second side and a side connecting the first side and the second side Board; A first conductivity type semiconductor layer on the first surface of the transparent substrate; A second conductivity type semiconductor layer on the first conductivity type semiconductor layer; An active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; A first pad electrically connected to the first conductive semiconductor layer; And a second pad electrically connected to the second conductivity type semiconductor layer.
  • light generated in the active layer is emitted to the outside of the transparent substrate through the second surface of the transparent substrate.
  • the at least one light emitting diode has a directing angle of at least 140 degrees in at least one axial direction.
  • the thickness of the transparent substrate may have a value within the range of 225 ⁇ m to 400 ⁇ m.
  • the at least one light emitting diode may further include a conformal coating layer covering the second surface of the transparent substrate.
  • the sum of the thicknesses of the transparent substrate and the conformal coating may have a value within the range of 225 ⁇ m to 600 ⁇ m.
  • the thickness of the conformal coating may have a value within the range of 20 ⁇ m to 200 ⁇ m.
  • a lighting device comprising a lighting module.
  • the lighting module has a plurality of light emitting diodes including at least one light emitting diode as described above.
  • a backlight unit includes a plurality of light emitting diodes, wherein at least one light emitting diode has a first surface, a second surface, and a side surface connecting the first surface and the second surface. Board; A first conductivity type semiconductor layer on the first surface of the transparent substrate; A second conductivity type semiconductor layer on the first conductivity type semiconductor layer; An active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; A first pad electrically connected to the first conductive semiconductor layer; And a second pad electrically connected to the second conductivity type semiconductor layer.
  • light generated in the active layer is emitted to the outside of the transparent substrate through the second surface of the transparent substrate.
  • the at least one light emitting diode has a directing angle of at least 140 degrees in at least one axial direction.
  • the thickness of the transparent substrate may have a value within the range of 225 ⁇ m to 400 ⁇ m.
  • the at least one light emitting diode may further include a conformal coating layer covering the second surface of the transparent substrate, the sum of the thickness of the transparent substrate and the conformal coating has a value within the range of 225 ⁇ m to 600 ⁇ m Can have.
  • the thickness of the conformal coating may have a value within the range of 20 ⁇ m to 200 ⁇ m.
  • a light emitting diode comprising: a transparent substrate having a first surface, a second surface, and a side surface connecting the first surface and the second surface; A first conductivity type semiconductor layer on the first surface of the transparent substrate; A second conductivity type semiconductor layer on the first conductivity type semiconductor layer; An active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; A first pad electrically connected to the first conductive semiconductor layer; And a second pad electrically connected to the second conductivity type semiconductor layer.
  • the light generated in the active layer is emitted to the outside of the transparent substrate through the second surface of the transparent substrate, the transparent substrate has a polygonal shape having at least one acute angle.
  • the light extraction efficiency of the light emitting diode is improved, and the directivity angle characteristic of the light emitting diode can be adjusted. Therefore, it is possible to provide a light emitting diode having different directivity angle characteristics depending on the direction.
  • the transparent substrate may have a thickness in the range of 100 ⁇ m to 400 ⁇ m.
  • the polygonal shape having at least one acute angle may be a triangular shape, a parallelogram shape, or a pentagonal shape.
  • the transparent substrate may be a sapphire substrate.
  • the transparent substrate may have a parallelogram shape, and the side surface of the transparent substrate may be formed of an m plane group. Since the side surface of the transparent substrate is composed of the m surface group, the wafer can be scribed along the crystal surface of the m surface group, thereby preventing damage such as chipping during division into individual light emitting diodes.
  • the light emitting diode may further include a reflective electrode positioned on the second conductive semiconductor layer to reflect light generated by the active layer.
  • the light efficiency can be improved by reflecting light by the reflective electrode.
  • the active layer and the second conductive semiconductor layer may be located in the upper region of the first conductive semiconductor layer so that the upper surface of the first conductive semiconductor layer is exposed along the edge of the substrate.
  • the light emitting diode may further include a current spreading layer connecting the first pad and the first conductive semiconductor layer, wherein the first pad and the second pad are disposed on the second conductive semiconductor layer. Can be located. Accordingly, it is possible to reduce the height difference between the first pad and the second pad, thereby facilitating flip chip bonding.
  • the current spreading layer may include a reflective metal. In addition to the reflective electrode, light can be reflected by the current spreading layer, thereby further increasing the light efficiency of the light emitting diode.
  • the light emitting diode may further include a lower insulating layer that insulates the current spreading layer from the reflective electrode.
  • the lower insulating layer may have openings exposing the first conductive semiconductor layer, and the current spreading layer may be connected to the first conductive semiconductor layer through the openings.
  • each of the openings may be disposed in an elongated shape along edges of the substrate.
  • the openings may be farther away from the at least one acute angle than the other angles. Accordingly, concentration of current in the acute angle portion can be alleviated.
  • the openings may include a plurality of holes spaced apart from each other along an edge of the substrate.
  • the spacing between the holes may increase as the at least one acute angle portion approaches. Accordingly, concentration of current in the acute angle portion can be alleviated.
  • the side surface of the light emitting diode may be inclined such that the first surface has a larger area than the second surface.
  • the inclined side further improves the light extraction efficiency.
  • the light emitting diode may further include a conformal coating covering the second surface of the substrate.
  • the sum of the thicknesses of the transparent substrate and the conformal coating may have a value within the range of 225 ⁇ m to 600 ⁇ m, thereby increasing the directing angle of the light.
  • an illumination device comprising a plurality of light emitting diodes.
  • At least one of the light emitting diodes includes: a transparent substrate having a first surface, a second surface, and a side surface connecting the first surface and the second surface; A first conductivity type semiconductor layer on the first surface of the transparent substrate; A second conductivity type semiconductor layer on the first conductivity type semiconductor layer; An active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; A first pad electrically connected to the first conductive semiconductor layer; And a second pad electrically connected to the second conductivity type semiconductor layer.
  • the light generated in the active layer is emitted to the outside of the transparent substrate through the second surface of the transparent substrate, the transparent substrate has a polygonal shape having at least one acute angle.
  • a light emitting diode includes: a first conductivity type semiconductor layer disposed on a first surface of a substrate having a first surface and a second surface opposite to the first surface; A mesa having an active layer and a second conductive semiconductor layer sequentially stacked on the first conductive semiconductor layer, the planar shape is a polygon having an acute angle and an obtuse angle, and the first conductive semiconductor layer is exposed to the outside thereof.
  • Mesa A lower portion covering the mesa and having a plurality of first openings exposing the first conductive semiconductor layer adjacent to outer sides of the mesa and a second opening exposing an upper surface of the second conductive semiconductor layer.
  • the distance between the first openings adjacent to the acute angle of the mesa is greater than the distance between the first openings adjacent to the obtuse angle of the mesa.
  • a flip chip type light emitting diode having a relatively wide orientation angle is provided. Therefore, it can be used suitably for a backlight unit or a surface illuminating device.
  • the light emitting diodes having the wide directivity are arranged, the number of use of the light emitting diodes may be reduced or the backlight unit or the lighting module may be slimmed.
  • a substrate having at least one acute angle it is possible to provide a flip chip type light emitting diode having improved luminous efficiency and having different directivity angle characteristics depending on the direction. Furthermore, by adopting such a light emitting diode, it is possible to provide a lighting device capable of illuminating a large area while reducing light loss.
  • FIG. 1 to 5 are views for explaining a method of manufacturing a light emitting diode according to an embodiment of the present invention, (a) is a cross-sectional view taken along the cutting line A-A in (b) in each of the drawings.
  • FIG. 6 is a plan view for explaining a modification of the mesa structure.
  • FIG. 7 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.
  • FIG. 8 is a cross-sectional view for describing a light emitting diode according to still another embodiment of the present invention.
  • 9 to 12 are graphs showing directivity of light emitting diodes at various substrate thicknesses.
  • 13 is a graph showing the directivity angles of light emitting diodes according to the thickness of the substrate.
  • 18 is a graph showing the directivity angles of light emitting diodes with conformal coating according to substrate thickness.
  • 19 is a schematic cross-sectional view illustrating a light emitting diode module employing conventional light emitting diodes and a light emitting diode module employing light emitting diodes according to the present invention.
  • FIG. 1 to 5 are views for explaining a method of manufacturing a light emitting diode according to an embodiment of the present invention, (a) is a cross-sectional view taken along the cutting line A-A in (b) in each of the drawings.
  • a first conductivity type semiconductor layer 23 is formed on a substrate 21, and an active layer 25 and a second conductivity type semiconductor layer (on the first conductivity type semiconductor layer 23). 27) is located.
  • the substrate 21 is a substrate for growing a gallium nitride-based semiconductor layer, and may be, for example, a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate, an indium gallium nitride substrate, an aluminum gallium nitride substrate, an aluminum nitride substrate, a gallium oxide substrate, or the like. In particular, it may be a sapphire substrate.
  • the first conductive semiconductor layer 23 may be a nitride based semiconductor layer and may be a layer doped with n-type impurities.
  • the first conductive semiconductor layer 23 may be a layer doped with Si in an In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1) layer.
  • the first conductivity type semiconductor layer 23 may be a GaN layer doped with Si.
  • the second conductivity-type semiconductor layer 27 is a nitride-based semiconductor layer and may be a layer doped with a p-type impurities.
  • the second conductive semiconductor layer 27 may be doped with Mg or Zn in an In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1) layer. It may be a layer.
  • the second conductivity-type semiconductor layer 27 may be a GaN layer doped with Mg.
  • the active layer 25 may include a well layer of an In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1) layer, or a single quantum well structure or It may have a multi-quantum well structure.
  • the active layer 25 may have a single quantum well structure of an InGaN, GaN or AlGaN layer, or a multi-quantum well structure in which layers such as InGaN / GaN, GaN / AlGaN or AlGaN / AlGaN are stacked.
  • the first conductive semiconductor layer 23, the active layer 25, and the second conductive semiconductor layer 27 may be formed using metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) techniques.
  • MOCVD metalorganic chemical vapor deposition
  • MBE molecular beam epitaxy
  • a plurality of mesas M spaced apart from each other may be formed on the first conductive semiconductor layer 23, and the plurality of mesas M may be the active layer 25 and the second conductive semiconductor layer 27, respectively. It may include.
  • the active layer 25 is positioned between the first conductive semiconductor layer 23 and the second conductive semiconductor layer 27.
  • the reflective electrodes 30 are located on the plurality of mesas M, respectively.
  • the plurality of mesas M may include an epitaxial layer including the first conductive semiconductor layer 23, the active layer 25, and the second conductive semiconductor layer 27 on the first surface of the substrate 21. After growing using a vapor phase growth method or the like, the second conductive semiconductor layer 27 and the active layer 25 may be patterned to expose the first conductive semiconductor layer 23. Sides of the plurality of mesas M may be formed to be inclined by using a technique such as photoresist reflow. The inclined profile of the mesa (M) side improves the extraction efficiency of the light generated in the active layer 25.
  • the plurality of mesas M may have an elongated shape extending in parallel to each other in one direction as shown. This shape simplifies forming a plurality of mesas M of the same shape in the plurality of chip regions on the substrate 21.
  • the reflective electrodes 30 may be formed on each mesa M after the plurality of mesas M are formed, but is not limited thereto.
  • the second conductive semiconductor layer 27 may be grown and mesas. It may be formed in advance on the second conductivity-type semiconductor layer 27 before forming (M).
  • the reflective electrode 30 covers most of the upper surface of the mesa M, and has a shape substantially the same as the planar shape of the mesa M.
  • the reflective electrodes 30 may include a reflective layer 28 and may further include a barrier layer 29.
  • the barrier layer 29 may cover the top and side surfaces of the reflective layer 28.
  • barrier layer 29 can be formed to cover the top and side surfaces of reflective layer 28.
  • the reflective layer 28 may be formed by depositing and patterning an Ag, Ag alloy, Ni / Ag, NiZn / Ag, TiO / Ag layer.
  • the barrier layer 29 may be formed of Ni, Cr, Ti, Pt, or a composite layer thereof, and prevents the metal material of the reflective layer from being diffused or contaminated.
  • an edge of the first conductivity type semiconductor layer 23 may also be etched. Accordingly, the upper surface of the substrate 21 may be exposed. Side surfaces of the first conductive semiconductor layer 23 may also be formed to be inclined.
  • the plurality of mesas M may be formed so as to be limitedly positioned inside the upper region of the first conductivity-type semiconductor layer 23. That is, the plurality of mesas M may be located in an island shape on the upper region of the first conductivity type semiconductor layer 23.
  • mesas M extending in one direction may be formed to reach the upper edge of the first conductivity-type semiconductor layer 23. That is, the one side edge of the bottom surface of the plurality of mesas M coincides with the one side edge of the first conductivity type semiconductor layer 23. Accordingly, an upper surface of the first conductivity type semiconductor layer 23 is partitioned by the plurality of mesas M.
  • a lower insulating layer 31 covering the plurality of mesas M and the first conductive semiconductor layer 23 is formed.
  • the lower insulating layer 31 has openings 31a and 31b to allow electrical connection to the first conductive semiconductor layer 23 and the second conductive semiconductor layer 27 in a specific region.
  • the lower insulating layer 31 may have openings 31a exposing the first conductivity type semiconductor layer 23 and openings 31b exposing the reflective electrodes 30.
  • the openings 31a may be positioned near the edge between the mesas M and the edge of the substrate 21, and may have an elongated shape extending along the mesas M.
  • the openings 31b are limited to the upper portion of the mesa M, and may be positioned to the same end side of the mesas.
  • the lower insulating layer 31 may be formed of an oxide film such as SiO 2 , a nitride film such as SiNx, or an insulating film of MgF 2 using a technique such as chemical vapor deposition (CVD).
  • the lower insulating layer 31 may be formed as a single layer, but is not limited thereto and may be formed as a multilayer.
  • the lower insulating layer 31 may be formed of a distributed Bragg reflector (DBR) in which a low refractive material layer and a high refractive material layer are alternately stacked.
  • DBR distributed Bragg reflector
  • an insulating reflective layer having a high reflectance can be formed by laminating layers such as SiO 2 / TiO 2 or SiO 2 / Nb 2 O 5 .
  • a current spreading layer 33 is formed on the lower insulating layer 31.
  • the current spreading layer 33 covers the plurality of mesas M and the first conductive semiconductor layer 23.
  • the current spreading layer 33 has openings 33a located in the upper region of each mesa M and exposing the reflective electrodes 30.
  • the current spreading layer 33 may be in ohmic contact with the first conductivity type semiconductor layer 23 through the openings 31a of the lower insulating layer 31. Meanwhile, the current spreading layer 33 is insulated from the plurality of mesas M and the reflective electrodes 30 by the lower insulating layer 31.
  • the openings 33a of the current spreading layer 33 have a larger area than the openings 31b of the lower insulating layer 31, respectively, to prevent the current spreading layer 33 from connecting to the reflective electrodes 30. Have Thus, sidewalls of the openings 33a are located on the lower insulating layer 31.
  • the current spreading layer 33 is formed over almost the entire area of the substrate 31 except for the openings 33a. Therefore, the current can be easily distributed through the current spreading layer 33.
  • the current spreading layer 33 may include a high reflective metal layer such as an Al layer, and the high reflective metal layer may be formed on an adhesive layer such as Ti, Cr, or Ni.
  • a protective layer of a single layer or a composite layer structure such as Ni, Cr, Au, or the like may be formed on the highly reflective metal layer.
  • the current spreading layer 33 may have, for example, a multilayer structure of Ti / Al / Ti / Ni / Au.
  • an upper insulating layer 35 is formed on the current spreading layer 33.
  • the upper insulating layer 35 has openings 35b exposing the current spreading layer 33 and openings 35b exposing the reflective electrodes 30.
  • the opening 35a may have an elongated shape in a direction perpendicular to the longitudinal direction of the mesa M, and has a relatively large area compared to the openings 35b.
  • the openings 35b expose the reflective electrodes 30 exposed through the openings 33a of the current spreading layer 33 and the openings 31b of the lower insulating layer 31.
  • the openings 35b may have a smaller area than the openings 33a of the current spreading layer 33, and may have a larger area than the openings 31b of the lower insulating layer 31. Accordingly, sidewalls of the openings 33a of the current spreading layer 33 may be covered by the upper insulating layer 35.
  • the upper insulating layer 35 may be formed using an oxide insulating layer, a nitride insulating layer, or a polymer such as polyimide, teflon, parylene, or the like.
  • a first pad 37a and a second pad 37b are formed on the upper insulating layer 35.
  • the first pad 37a connects to the current spreading layer 33 through the opening 35a of the upper insulating layer 35
  • the second pad 37b connects the openings 35b of the upper insulating layer 35. It is connected to the reflective electrodes 30 through.
  • the first pad 37a and the second pad 37b may be connected to bumps or used as pads for SMT in order to mount a light emitting diode to a submount, package, or printed circuit board.
  • the first and second pads 37a and 37b may be formed together in the same process, for example, using photo and etching techniques or lift off techniques.
  • the first and second pads 37a and 37b may include, for example, an adhesive layer such as Ti, Cr, or Ni, and a highly conductive metal layer such as Al, Cu, Ag, or Au.
  • the light emitting diode is completed by dividing the substrate 21 into individual light emitting diode chip units.
  • the substrate 21 may be deformed to have a thinner thickness through a thinning process before being divided into individual LED chips.
  • the light emitting diode includes a substrate 21, a first conductive semiconductor layer 23, an active layer 25, a second conductive semiconductor layer 27, a first pad 37a, and a second pad 37b. It may include reflective electrodes 30, current spreading layer 33, lower insulating layer 31, upper insulating layer 35 and mesas (M).
  • the substrate 21 may be a growth substrate for growing the gallium nitride-based epi layers, such as sapphire, silicon carbide, and gallium nitride substrate.
  • the substrate 21 may include a first surface 21a, a second surface 21b, and a side surface 21c.
  • the first surface 21a is a surface on which semiconductor layers are grown
  • the second surface 21b is a surface on which light generated in the active layer 25 is emitted to the outside.
  • the side surface 21c connects the first surface 21a and the second surface 21b.
  • the side surface 21c of the substrate 21 may be a surface perpendicular to the first surface 21a and the second surface 21b, but is not limited thereto and may be an inclined surface.
  • the substrate 21 may have an inclined side surface 21d such that the first surface 21a has a larger area than the second surface 21b, as shown by the dotted line 21d shown in FIG. 7.
  • the thickness t1 of the substrate 21 may have a value within the range of 225 ⁇ m to 400 ⁇ m.
  • the first conductive semiconductor layer 23 is located on the first surface 21a of the substrate 21.
  • the first conductive semiconductor layer 23 is continuous, and the active layer 25 and the second conductive semiconductor layer 27 are positioned on the first conductive semiconductor layer 23.
  • the plurality of mesas M may be spaced apart from each other on the first conductivity type semiconductor layer 23.
  • the mesas M include the active layer 25 and the second conductivity-type semiconductor layer 27 as described with reference to FIG. 1 and have an elongated shape extending toward one side.
  • the mesas M may be a stacked structure of a gallium nitride compound semiconductor.
  • Mesas M may be located within the upper region of the first conductivity-type semiconductor layer 23, as shown in FIG. On the contrary, as shown in FIG.
  • the mesas M may extend to one edge of the upper surface of the first conductivity-type semiconductor layer 23 in one direction, and thus the first conductivity-type semiconductor layer ( The upper surface of 23 may be partitioned into a plurality of regions. Accordingly, it is possible to alleviate the concentration of the current near the edge of the mesas (M) to further enhance the current distribution performance.
  • the reflective electrodes 30 are respectively positioned on the plurality of mesas M to make ohmic contact with the second conductive semiconductor layer 27.
  • the reflective electrodes 300 may include a reflective layer 28 and a barrier layer 29, and the barrier layer 29 may cover the top and side surfaces of the reflective layer 28.
  • the current spreading layer 33 covers the plurality of mesas M and the first conductive semiconductor layer 23.
  • the current spreading layer 33 has openings 33a positioned in the upper region of each mesa M and exposing the reflective electrodes 30.
  • the current spreading layer 33 may cover the entire area of the mesa M except for a part of the upper area of the mesa M in which the openings 33a are formed. It can cover the whole area.
  • the current spreading layer 33 is also in ohmic contact with the first conductivity type semiconductor layer 23 and insulated from the plurality of mesas M.
  • the current spreading layer 33 may include a reflective metal such as Al.
  • the current spreading layer 33 may be insulated from the plurality of mesas M by the lower insulating layer 31.
  • the lower insulating layer 31 may be positioned between the plurality of mesas M and the current spreading layer 33 to insulate the current spreading layer 33 from the plurality of mesas M.
  • the lower insulating layer 31 may have openings 31b disposed in the upper region of each mesa M to expose the reflective electrodes 30, and may expose the first conductivity-type semiconductor layer 23. It may have openings 31a.
  • the current spreading layer 33 may be connected to the first conductivity type semiconductor layer 23 through the openings 31a.
  • the openings 31b of the lower insulating layer 31 have a smaller area than the openings 33a of the current spreading layer 33 and are all exposed by the openings 33a.
  • the upper insulating layer 35 covers at least a portion of the current spreading layer 33.
  • the upper insulating layer 35 has openings 35b exposing the reflective electrodes 30.
  • the upper insulating layer 35 may have an opening 35a exposing the current spreading layer 33.
  • the upper insulating layer 35 may cover sidewalls of the openings 33a of the current spreading layer 33.
  • the first pad 37a may be positioned on the current spreading layer 33, and may be connected to the current spreading layer 33 through, for example, an opening 35a of the upper insulating layer 35.
  • the first pad 37a is electrically connected to the first conductive semiconductor layer 23 through the current spreading layer 33.
  • the second pad 37b is connected to the reflective electrodes 30 exposed through the openings 35b and electrically connected to the second conductive semiconductor layer 27 through the reflective electrodes 30. .
  • the directivity angle of the light emitting diode 100 can be increased to 140 degrees or more.
  • the current spreading layer 33 covers almost the entire area of the first conductivity-type semiconductor layer 23 between the mesas M and the mesas M, the current easily flows through the current spreading layer 33. Can be dispersed.
  • the current spreading layer 23 includes a reflective metal layer such as Al, or the lower insulating layer is formed as an insulating reflecting layer so that the light not reflected by the reflecting electrodes 30 is reflected by the current spreading layer 23 or the lower insulating layer.
  • the layer 31 can be used for reflection to improve the light extraction efficiency.
  • FIG. 8 is a cross-sectional view for describing a light emitting diode 200 according to another embodiment of the present invention.
  • the light emitting diode 200 is generally similar to the light emitting diode 100 of FIG. 7, but there is a difference in that the conformal coating 50 is positioned on the substrate 21.
  • the conformal coating 50 may cover the second surface 21b of the substrate 21 with a uniform thickness and may also cover the side surface 21c.
  • the conformal coating 50 may include a wavelength converting material such as a phosphor.
  • the sum of the thickness t1 of the substrate 21 and the thickness t2 of the conformal coating 50 may be 225 ⁇ m or more and 600 ⁇ m or less.
  • the thickness t2 of the conformal coating 50 may have a value in the range of 20 ⁇ m to 200 ⁇ m.
  • the thickness t1 of the substrate 21 may be changed according to the thickness t2 of the conformal coating, and may have a value within a range of 150 ⁇ m to 400 ⁇ m, for example.
  • the directivity angle of the light emitting diode 200 may be increased to 140 degrees or more.
  • 9 to 12 are graphs showing directivity of light emitting diodes at various substrate thicknesses.
  • the solid line represents the directivity characteristic in the first axis (x-axis) direction
  • the dotted line represents the directivity characteristic in the second axis (y-axis) direction orthogonal to the first axis.
  • a sapphire substrate was used as the substrate 21, and light emitting diodes as described in FIG. 7 were manufactured by varying the thickness of the sapphire substrate 21.
  • the size of the light emitting diode was 1 mm x 1 mm, and the thicknesses of the sapphire substrate 21 were approximately 80 ⁇ m, 150 ⁇ m, 250 ⁇ m and 400 ⁇ m.
  • FIG. 13 is a graph illustrating the directivity angles of light emitting diodes according to the thickness of the substrate of FIGS. 9 to 12.
  • 'Orientation angle' refers to the angle range in which a light beam of 1/2 or more of the maximum light beam appears.
  • 'Orientation angle' corresponds to the angular length from the minimum angle to the maximum angle where the normalized intensity becomes 0.5 in the directed distribution graph.
  • the orientation angle increases to about 140 degrees, and the orientation angle is large when the thickness t1 of the substrate 21 is 250 ⁇ m or more. There was no change.
  • the orientation angle can be maintained at 140 degrees without applying another transparent film on the substrate 21, and the thickness t1 is increased beyond that. Even if it is made, a big change in orientation angle does not occur.
  • 14 to 17 are graphs showing directivity of light emitting diodes 200 having conformal coatings at various substrate thicknesses t1.
  • the solid line represents the directivity characteristic in the first axis (x-axis) direction
  • the dotted line represents the directivity characteristic in the second axis (y-axis) direction orthogonal to the first axis.
  • light emitting diodes are manufactured by varying the thickness t1 of the sapphire substrate 21, and a condenser having the same thickness t2 of about 75 ⁇ m on each substrate 21.
  • the formal coating 50 was applied to fabricate the light emitting diodes 200 as shown in FIG. 8.
  • FIG. 18 is a graph illustrating directing angles of the light emitting diodes 200 having the conformal coating 50 according to the substrate thickness t1 of FIGS. 14 to 17.
  • the orientation angle increases to about 143 degrees, and when the thickness t1 of the substrate 21 is 150 ⁇ m or more, the orientation angle is large. There was no change. Therefore, when the sum of the thickness t1 of the substrate 21 and the thickness t2 of the conformal coating 50 is 225 ⁇ m or more, the orientation angle is saturated to a value of 140 degrees or more.
  • the light emitting diode 200 having a directivity angle of 140 degrees or more can be provided.
  • the light emitting diode 200 having a directivity angle of 140 degrees or more may be provided even when the thickness of the substrate 21 is about 225 ⁇ m without the conformal coating 50.
  • FIG. 19 is a schematic cross-sectional view illustrating a light emitting diode module 300a employing conventional light emitting diodes 10 and light emitting diode modules 300b and 300c employing light emitting diodes 100 according to the present invention.
  • the light emitting diode modules 300a, 300b, and 300c are used as backlight units for backlighting the liquid crystal display panel 400.
  • the conventional light emitting diode 10 has a directivity angle ⁇ 1 of approximately 120 degrees, whereas the light emitting diode 100 of the present invention has a directivity angle ⁇ 2 of approximately 140 degrees or more.
  • the distance between the light emitting diode module and the liquid crystal display panel 400 may be expressed as d, the pitch of the light emitting diodes p, and the directivity angle of the light emitting diodes ⁇ .
  • the pitch p represents the width of a region where one light emitting diode irradiates the liquid crystal display panel 400, and is represented by the following equation (1).
  • the pitch p1 of the conventional light emitting diode module 300a and the pitch p2 of the light emitting diode module 300b according to the present invention are represented by the following equations (2) and (3), respectively.
  • the orientation angle ( ⁇ 2) of the LED 100 is to the following formula (4) is satisfied since larger than the directivity angle ( ⁇ 1) of the conventional light-emitting diode (10) ⁇ 2/2 is smaller than 90 degrees .
  • the light emitting diode module 300b according to the present invention may arrange the light emitting diodes 100 at a wider distance than the conventional light emitting diode module 300a. Therefore, the number of light emitting diodes 100 used in the light emitting diode module 300b may be reduced.
  • the light emitting diode module 300c of the present invention is closer to the liquid crystal display panel 400 than the light emitting diode module 300a. It can be arranged, thus making it possible to slim down the backlight unit and further the liquid crystal display.
  • the light emitting diode modules 300a, 300b, and 300c are used as backlight units, but the light emitting diode modules 300a, 300b, and 300c may be used as lighting modules used in lighting devices.
  • the lighting modules 300a, 300b, and 300c may irradiate the diffuser plate 400 of the illumination device.
  • the illumination module 300a, 300b, and 300c may irradiate the diffuser plate having the same area with a smaller number of light emitting diodes. , Or closer to the diffuser plate.
  • 20 to 24 are diagrams for describing a method of manufacturing a light emitting diode according to an exemplary embodiment of the present invention, in which (a) is a sectional view taken along a cut line A-A in (b).
  • a first conductivity type semiconductor layer 123 is formed on a substrate 121, and an active layer 125 and a second conductivity type semiconductor layer (1) are formed on the first conductivity type semiconductor layer 123. 127 is located.
  • the substrate 121 is a substrate for growing a gallium nitride based semiconductor layer, for example, may be a sapphire substrate, a silicon carbide substrate, or a gallium nitride substrate, and in particular, may be a sapphire substrate.
  • the substrate 121 will be provided in the form of a large area wafer capable of manufacturing a plurality of light emitting diodes, but FIG. 20 shows only the substrate portion of the final light emitting diode after being separated into individual light emitting diodes.
  • the substrate 121 may have a parallelogram shape having an acute angle, for example, a rhombus shape, but is not limited thereto.
  • the substrate 121 may have various polygonal shapes such as a triangle, a pentagon, and the like having an acute angle.
  • the first conductive semiconductor layer 123 may be a nitride based semiconductor layer and may be a layer doped with n-type impurities.
  • the first conductivity type semiconductor layer 123 may be a layer doped with Si in an In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1) layer.
  • the first conductivity type semiconductor layer 123 may be a GaN layer doped with Si.
  • the second conductivity-type semiconductor layer 127 may be a nitride-based semiconductor layer and may be a layer doped with p-type impurities.
  • the second conductive semiconductor layer 127 may be doped with Mg or Zn in an In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1) layer. It may be a layer.
  • the second conductivity-type semiconductor layer 27 may be a GaN layer doped with Mg.
  • the active layer 125 may include a well layer of an In x Al y Ga 1-xy N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1) layer, or a single quantum well structure or It may have a multi-quantum well structure.
  • the active layer 125 may have a single quantum well structure of an InGaN, GaN or AlGaN layer, or a multi-quantum well structure in which layers such as InGaN / GaN, GaN / AlGaN or AlGaN / AlGaN are stacked.
  • the first conductive semiconductor layer 123, the active layer 125, and the second conductive semiconductor layer 127 may be formed using metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) techniques.
  • MOCVD metal organic chemical vapor deposition
  • MBE molecular beam epitaxy
  • a mesa is formed on the first conductive semiconductor layer 123, and a portion of the first conductive semiconductor layer 123 is exposed along an edge of the mesa. As shown in FIG. 20, the top surface of the first conductive semiconductor layer 123 may be exposed along the edge of the substrate 121 of the final light emitting diode, and the active layer 125 and the second conductive semiconductor layer 127 may be exposed. ) May be located within the upper region of the first conductivity type semiconductor layer 123.
  • the mesa may be formed on the first surface of the substrate 121.
  • the organic layer may include a semiconductor stacked structure 126 including a first conductive semiconductor layer 123, an active layer 125, and a second conductive semiconductor layer 127. After growing using a vapor phase growth method or the like, the second conductive semiconductor layer 127 and the active layer 125 may be formed by patterning the first conductive semiconductor layer 123.
  • the side of the mesa may be formed to be inclined by using a technique such as photoresist reflow. The inclined profile of the mesa side improves the extraction efficiency of the light generated in the active layer 125.
  • the planar shape of the mesa is similar to the planar shape of the substrate 121.
  • the planar shape of the mesa has at least one acute angle like the planar shape of the substrate 121.
  • the planar shape of the mesa may be a quadrangle having a pair of obtuse angles facing each other and a pair of acute angles facing each other.
  • the obtuse angles may have the same value as each other, and the acute angles may have the same value as each other.
  • the planar shape of the mesa may be a rhombus shape or a diamond shape.
  • One side of the mesa may be disposed perpendicular to the flat zone of the substrate 121.
  • the substrate 121 is a sapphire substrate
  • one side of the mesa may be aligned with the m-plane.
  • the planar shape of the semiconductor stacked structure 126 may also have a shape similar to that of the mesa.
  • the reflective electrode 130 is formed on the second conductivity type semiconductor layer 127.
  • the reflective electrode 130 may be formed on the mesa after the mesa is formed, but is not limited thereto, and the second conductive semiconductor layer 127 may be formed before the second conductive semiconductor layer 127 is grown and the mesa is formed. 127 may be formed in advance.
  • the reflective electrode 130 covers most of the upper surface of the second conductivity-type semiconductor layer and has a shape substantially the same as a planar shape of the mesa.
  • the reflective electrode 130 may include a reflective layer 128 and further include a barrier layer 129.
  • the barrier layer 129 may cover the top and side surfaces of the reflective layer 128.
  • barrier layer 129 may be formed to cover the top and side surfaces of reflective layer 128.
  • the reflective layer 128 may be formed by depositing and patterning an Ag, Ag alloy, Ni / Ag, NiZn / Ag, TiO / Ag layer.
  • the barrier layer 129 may be formed of Ni, Cr, Ti, Pt, or a composite layer thereof to prevent the metal material of the reflective layer 128 from being diffused or contaminated.
  • an upper edge of the substrate 121 may be exposed by additionally etching the edges of the exposed first conductive semiconductor layer 123.
  • the side surface of the first conductivity-type semiconductor layer 123 may also be formed to be inclined.
  • a lower insulating layer 131 is formed to cover the first conductivity-type semiconductor layer 123 and the reflective electrode 130.
  • the lower insulating layer 131 has openings 131a and 131b for allowing electrical connection to the first conductive semiconductor layer 123 and the second conductive semiconductor layer 127 in a specific region.
  • the lower insulating layer 131 may have openings 131a exposing the first conductivity type semiconductor layer 123 and openings 131b exposing the reflective electrode 130.
  • the opening 131a may be positioned near the edge of the substrate 121 around the reflective electrode 130 and may have an elongated shape extending along the edge of the substrate 121.
  • the openings 131a are formed to be farther from each other at the acute angle than at the obtuse portion, as shown in FIG. 21.
  • the distance between the openings 131a near the acute portion may be greater than or equal to the current spreading length, and the distance between the openings 131a near the obtuse portion may be equal to or less than the current spreading length.
  • the current spreading length means the length from the p electrode edge to where the current density is reduced by 1 / e when the driving current is drawn into the device.
  • the opening 131b is limited to the upper portion of the reflective electrode 130, and may be disposed to be near the acute angle of the substrate 121.
  • the opening 131b may have, for example, a planar shape of triangle or trapezoid.
  • the lower insulating layer 131 may be formed of an oxide film such as SiO 2 , a nitride film such as SiNx, or an insulating film of MgF 2 using a technique such as chemical vapor deposition (CVD).
  • the lower insulating layer 131 may be formed as a single layer, but is not limited thereto and may be formed as a multilayer.
  • the lower insulating layer 131 may be formed of a distributed Bragg reflector (DBR) in which the low refractive material layer and the high refractive material layer are alternately stacked.
  • DBR distributed Bragg reflector
  • an insulating reflective layer having a high reflectance can be formed by laminating layers such as SiO 2 / TiO 2 or SiO 2 / Nb 2 O 5 .
  • the opening 131a exposing the first conductivity type semiconductor layer 123 has an elongated shape and is formed along the edge of the substrate 121, but the present invention is not limited thereto.
  • a plurality of holes 131c exposing the first conductivity type semiconductor layer 123 may be arranged along the edge of the substrate 121.
  • the plurality of holes 131c may be disposed to be farther from each other as they become closer to the acute angle from the obtuse portion, thereby alleviating current concentration.
  • an interval between the holes 131c at both sides having the acute angle may be greater than an interval between the holes 131c at both sides having the acute angle.
  • an interval between the holes 131c at both sides having the acute angle may be
  • the distance between the current spreading length or more and the holes 131c on both sides of the obtuse portion may be less than or equal to the current spreading length.
  • the shapes of the holes 131c may be polygonal, circular, or semicircular.
  • a current spreading layer 133 is formed on the lower insulating layer 131.
  • the current spreading layer 133 covers the reflective electrode 130 and the first conductive semiconductor layer 123.
  • the current spreading layer 133 has an opening 133a positioned in the upper region of the reflective electrode 130 and exposing the reflective electrode 130.
  • the current spreading layer 133 may be in ohmic contact with the first conductive semiconductor layer 123 through the openings 131a of the lower insulating layer 131. Meanwhile, the current spreading layer 133 is insulated from the reflective electrode 130 by the lower insulating layer 131.
  • the openings 133a of the current spreading layer 133 have a larger area than the openings 131b of the lower insulating layer 131, respectively, to prevent the current spreading layer 133 from connecting to the reflective electrode 130. Therefore, the sidewall of the opening 133a is positioned on the lower insulating layer 131.
  • the current spreading layer 133 is formed over almost the entire area of the substrate 131 except for the opening 133a. Therefore, the current may be easily distributed through the current spreading layer 133.
  • the current spreading layer 133 may include a high reflective metal layer such as an Al layer, and the high reflective metal layer may be formed on an adhesive layer such as Ti, Cr, or Ni.
  • a protective layer of a single layer or a composite layer structure such as Ni, Cr, Au, or the like may be formed on the highly reflective metal layer.
  • the current spreading layer 133 may have a multilayer structure of, for example, Ti / Al / Ti / Ni / Au.
  • an upper insulating layer 135 is formed on the current spreading layer 133.
  • the upper insulating layer 135 has an opening 135b exposing the current spreading layer 133 and an opening 135b exposing the reflective electrode 130.
  • the opening 135a and the opening 135b may be disposed to face each other, and as shown in FIG. 23A, may be disposed near acute portions of the substrate 121.
  • the opening 135b exposes the reflective electrode 130 exposed through the opening 133a of the current spreading layer 133 and the opening 131b of the lower insulating layer 131.
  • the opening 135b has a narrower area than the openings 133a of the current spreading layer 133.
  • the opening 135b may have a smaller area than the opening 131b of the lower insulating layer 131, but is not limited thereto and may have a larger area.
  • the opening 135a may have an inverted trapezoidal shape, and the opening 135b may have a trapezoidal shape.
  • the upper insulating layer 135 may be formed using an oxide insulating layer, a nitride insulating layer, or a polymer such as polyimide, teflon, parylene, or the like.
  • a first pad 137a and a second pad 137b are formed on the upper insulating layer 135.
  • the first pad 137a is connected to the current spreading layer 133 through the opening 135a of the upper insulating layer 135, and the second pad 137b is connected to the opening 135b of the upper insulating layer 135. It is connected to the reflective electrode 130.
  • the first pad 137a is connected to the first conductive semiconductor layer 123 through the current dispersion layer 133
  • the second pad 137b is connected to the second conductive semiconductor through the reflective electrode 130. May be connected to layer 127.
  • the first pad 137a and the second pad 137b may be connected to bumps or used as pads for Surface Mounting Technology (SMT) for mounting the light emitting diodes to a submount, package, or printed circuit board.
  • SMT Surface Mounting Technology
  • the first and second pads 137a and 137b may be formed together in the same process, for example, using photo and etching techniques or lift off techniques.
  • the first and second pads 137a and 137b may include, for example, an adhesive layer such as Ti, Cr, or Ni, and a highly conductive metal layer such as Al, Cu, Ag, or Au.
  • the first and second pads 137a and 137b may further include a pad barrier layer covering the high conductivity metal layer.
  • the barrier metal layer prevents diffusion of metal atoms such as tin (Sn) during bonding or soldering to prevent an increase in specific resistance of the first and second pads 137a and 137b.
  • the pad barrier layer may be formed of Cr, Ni, Ti, W, TiW, Mo, Pt, or a composite layer thereof.
  • the light emitting diode is completed by dividing the substrate 121 into individual light emitting diode chip units.
  • the substrate 121 may be divided into individual light emitting diode chip units having a parallelogram shape by scribing along the m plane group. Accordingly, a light emitting diode in which side surfaces of the substrate 121 are formed in an m plane group may be provided.
  • the substrate 121 may be deformed to have a thinner thickness through a thinning process before being divided into individual LED chips.
  • the thickness of the substrate 121 may exceed 100 ⁇ m, and in particular, may be 225 ⁇ m or more and 400 ⁇ m or less.
  • a conformal coating (50 in FIG. 27) covering the substrate 121 of the individual light emitting diode chip may be further formed.
  • the conformal coating 150 may be formed before or after dividing the substrate 121 into chips.
  • the light emitting diode 100a may include a substrate 121, a first conductive semiconductor layer 123, an active layer 125, a second conductive semiconductor layer 127, and a first pad 137a.
  • the second pad 137b may include the reflective electrode 130, the current spreading layer 133, the lower insulating layer 131, and the upper insulating layer 135.
  • the substrate 121 may be a growth substrate for growing the gallium nitride-based epi layers, such as sapphire, silicon carbide, and gallium nitride substrate.
  • the substrate 121 may include a first surface 121a, a second surface 121b, and a side surface 121c.
  • the first surface 121a is a surface on which semiconductor layers are grown
  • the second surface 121b is a surface on which light generated by the active layer 125 is emitted to the outside.
  • the side surface 121c connects the first surface 121a and the second surface 121b.
  • the side surface 121c of the substrate 121 may be a surface perpendicular to the first surface 121a and the second surface 121b, but is not limited thereto and may be an inclined surface.
  • the substrate 121 may have an inclined side surface 121d such that the first surface 121a has a larger area than the second surface 121b, as shown by the dotted line 121d shown in FIG. 26.
  • the substrate 121 may have a polygonal shape having at least one acute angle.
  • the first surface 121a and the second surface 121b may have a polygonal shape such as a parallelogram, a triangle, or a pentagon, as described with reference to FIG. 20. Since the substrate 121 has an acute angle, the extraction efficiency of light through the acute part is improved, and the directivity angle of the light at the acute part may be increased.
  • the thickness of the substrate 121 may exceed 100 ⁇ m, and in particular, may have a value within the range of 225 ⁇ m to 400 ⁇ m. As the thickness of the substrate 121 is thicker, the directing angle of the light may be increased. When the thickness of the substrate 121 is 225 ⁇ m or more, the directing angle of the light may be substantially constant.
  • the first conductive semiconductor layer 123 is positioned on the first surface 121a of the substrate 121.
  • the first conductive semiconductor layer 123 may cover the entire surface of the first surface 121a of the substrate 121, but is not limited thereto and may expose the first surface 121a along the edge of the substrate 121.
  • the first conductivity-type semiconductor layer 123 may be located within the upper region of the substrate 121.
  • a mesa including an active layer 125 and a second conductive semiconductor layer 127 is positioned on the first conductive semiconductor layer 123.
  • the active layer 125 and the second conductivity-type semiconductor layer 127 are limited to the upper region of the first conductivity-type semiconductor layer 127. Therefore, some regions of the first conductivity-type semiconductor layer 127 may be exposed, particularly along the edge of the substrate 121.
  • the reflective electrode 130 makes ohmic contact with the second conductivity type semiconductor layer 127.
  • the reflective electrodes 130 may include a reflective layer 128 and a barrier layer 129, and the barrier layer 129 may cover the top and side surfaces of the reflective layer 128.
  • the current spreading layer 133 covers the reflective electrode 130 and the first conductive semiconductor layer 123.
  • the current spreading layer 133 has an opening 133a positioned in the upper region of the reflective electrode 130 and exposing the reflective electrode 130.
  • the current spreading layer 133 may cover the entire region of the reflective electrode 130 except for a portion of the upper region of the reflective electrode 130 having the opening 133a formed therein, and may also cover the first conductive semiconductor layer 123. Can cover the entire area).
  • the current spreading layer 133 is also ohmic contacted to the first conductivity type semiconductor layer 123 and insulated from the reflective electrode 130.
  • the current spreading layer 133 may be insulated from the reflective electrode 130 by the lower insulating layer 131.
  • the lower insulating layer 131 may be positioned between the reflective electrode 130 and the current spreading layer 133 to insulate the current spreading layer 133 from the reflective electrode 130.
  • the lower insulating layer 131 may be formed in the upper region of the reflective electrode 130 to have an opening 131b exposing the reflective electrode 130, and the openings exposing the first conductive semiconductor layer 123. 131a.
  • the openings 131b of the lower insulating layer 131 have a smaller area than the openings 133a of the current spreading layer 133, and are all exposed by the openings 133a.
  • the current spreading layer 133 may be connected to the first conductivity type semiconductor layer 123 through the openings 131a.
  • the openings 131a may be positioned along the edges of the substrate 121 as described with reference to FIG. 21, and may be farther away from the acute portion than in the obtuse portion. Accordingly, the luminous efficiency can be improved by preventing the current from being concentrated at the sharp corners.
  • the lower insulating layer 131 may have holes 131c as described with reference to FIG. 25 instead of the openings 131a.
  • the upper insulating layer 135 covers at least a portion of the current spreading layer 133.
  • the upper insulating layer 135 has an opening 135a exposing the current spreading layer 133 and an opening 135b exposing the reflective electrode 130.
  • the opening 135a and the opening 135b may be located near the acute parts to face each other.
  • the upper insulating layer 135 may cover the sidewall of the opening 133a of the current spreading layer 133, and the opening 135b may be located in the opening 133a.
  • the first pad 137a may be positioned on the current spreading layer 133, and may be connected to the current spreading layer 133 through the opening 135a of the upper insulating layer 135, for example.
  • the first pad 137a is electrically connected to the first conductive semiconductor layer 123 through the current spreading layer 133.
  • the second pad 137b is connected to the reflective electrode 130 exposed through the opening 135b and electrically connected to the second conductive semiconductor layer 127 through the reflective electrode 130.
  • the light extraction efficiency can be improved by making the substrate 121 have a polygonal shape having at least one acute angle, such as a parallelogram shape or a triangular shape. Furthermore, since the luminous flux emitted through the acute angle increases, the direct angle characteristic of the light emitting diode may be adjusted using the acute angle.
  • the directivity angle of light can be increased by setting the thickness of the substrate 121 to 100 ⁇ m or more.
  • the current spreading layer 123 includes a reflective metal layer such as Al, or the lower insulating layer is formed as an insulating reflecting layer so that the light that is not reflected by the reflecting electrodes 130 is scattered by the current spreading layer 123 or the lower insulating layer.
  • the layer 131 may be reflected to improve light extraction efficiency.
  • FIG. 27 is a cross-sectional view for describing a light emitting diode 200a according to another embodiment of the present invention.
  • the light emitting diode 200a is generally similar to the light emitting diode 100a of FIG. 26, but there is a difference in that the conformal coating 150 is positioned on the substrate 121.
  • the conformal coating 150 may cover the second surface 121b of the substrate 121 and may cover the side surface 121c with a uniform thickness.
  • the conformal coating 150 may include a wavelength converting material such as a phosphor.
  • the sum of the thickness of the substrate 121 and the thickness of the conformal coating 150 may be 225 ⁇ m or more and 600 ⁇ m or less.
  • the thickness of conformal coating 150 may have a value within the range of 20 ⁇ m to 200 ⁇ m.
  • the thickness of the substrate 121 may be changed according to the thickness of the conformal coating, and may have, for example, a value within a range of 100 ⁇ m to 400 ⁇ m.
  • the directivity angle of the light emitting diode 200a may be increased to 140 degrees or more.
  • FIG. 28 is a schematic plan view for explaining light extraction characteristics according to a substrate shape.
  • (a) is a view showing a path of light propagation in the conventional rectangular substrate 111
  • (b) is a view of the light in the diamond-shaped substrate 121 having an acute angle according to an embodiment of the present invention
  • a part of the light generated at a specific position Lp of the active layer enters the substrate 111 and then repeats total internal reflection on the side surfaces of the substrate 111.
  • the light travels a considerable distance inside the substrate 111, and thus light loss occurs in the substrate 111.
  • the thickness of the substrate 111 becomes thicker, more internal total reflection occurs at the side of the substrate 111 and thus light loss is increased.
  • the direction angle along the direction is constant without large difference.
  • the diamond-shaped substrate 121 As shown in FIG. 28 (b), a part of the light generated at the specific position Lp of the active layer enters the substrate 121, and then the substrate 121 is removed. After total internal reflection at the sides, the angle of incidence of light is generally reduced near the acute angle and emitted to the outside. Therefore, by employing the diamond substrate 121, the light extraction efficiency is improved as compared with the case where the conventional substrate 111 is adopted. Moreover, since the light extraction efficiency is increased at the acute angle portion, the directing angle of the light at the acute angle portion increases compared to the obtuse portion. Therefore, it is possible to provide a light emitting diode having different orientation angle characteristics depending on the direction.
  • the substrate 111 of the light emitting diode manufactured according to the prior art has a rectangular shape of 300 ⁇ m ⁇ 1000 ⁇ m, and the thickness thereof is approximately 250 ⁇ m.
  • the substrate 121 had a length of 1 mm between the acute parts and a length of about 0.58 mm between the obtuse parts.
  • the light emitting diode according to the related art has a substantially similar direction angle distribution R-X along the x-axis (short axis) direction and a direction angle distribution R-Y along the y-axis (long axis) direction.
  • the light emitting diode according to the embodiment of the present invention has a direction angle distribution DY in the y-axis direction passing through the acute angles relative to the direction angle distribution DX in the x-axis direction passing through the obtuse portions. It appears large.
  • a light emitting diode having different orientation angle characteristics in the x-axis direction and the y-axis direction.
  • Such a light emitting diode may be particularly useful for lighting devices that require different directivity angle characteristics depending on the direction, such as LED fluorescent lamps.
  • a plurality of light emitting diodes may be arranged in a line such that the y-axis direction having a wide direction angle is orthogonal to the length direction of the LED fluorescent lamp, thereby illuminating a large area while reducing light loss in the fluorescent lamp. have.

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PCT/KR2013/009395 2012-12-06 2013-10-22 발광 다이오드 및 그것의 어플리케이션 WO2014088201A1 (ko)

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CN201910265288.8A CN109979925B (zh) 2012-12-06 2013-10-22 发光二极管
CN201910834913.6A CN110600593B (zh) 2012-12-06 2013-10-22 发光二极管
DE112013005849.9T DE112013005849T5 (de) 2012-12-06 2013-10-22 Lichtemittierende Diode und Anwendung dafür
CN201380072266.0A CN105074941B (zh) 2012-12-06 2013-10-22 发光二极管、照明模块、照明设备和背光单元
US14/733,787 US9608171B2 (en) 2012-12-06 2015-06-08 Light-emitting diode and application therefor
US14/745,271 US9536924B2 (en) 2012-12-06 2015-06-19 Light-emitting diode and application therefor
US14/745,284 US9548425B2 (en) 2012-12-06 2015-06-19 Light-emitting diode and application therefor
US15/470,811 US10497836B2 (en) 2012-12-06 2017-03-27 Light-emitting diode and application therefor
US16/660,460 US10749080B2 (en) 2012-12-06 2019-10-22 Light-emitting diode and application therefor

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KR10-2012-0140991 2012-12-06
KR1020120140991A KR102013364B1 (ko) 2012-12-06 2012-12-06 발광 다이오드 및 그것의 어플리케이션
KR1020120155783A KR102071036B1 (ko) 2012-12-28 2012-12-28 발광 다이오드 및 그것을 채택하는 조명 장치
KR10-2012-0155783 2012-12-28
KR10-2013-0011453 2013-01-31
KR1020130011453A KR101984932B1 (ko) 2013-01-31 2013-01-31 예각과 둔각을 가지는 다각형의 발광다이오드 및 이를 포함하는 조명모듈

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