CN105074941A - 发光二极管和其应用 - Google Patents
发光二极管和其应用 Download PDFInfo
- Publication number
- CN105074941A CN105074941A CN201380072266.0A CN201380072266A CN105074941A CN 105074941 A CN105074941 A CN 105074941A CN 201380072266 A CN201380072266 A CN 201380072266A CN 105074941 A CN105074941 A CN 105074941A
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- conductive
- semiconductor layer
- type semiconductor
- light
- transparent substrates
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- 239000004065 semiconductor Substances 0.000 claims abstract description 275
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- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 31
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- 229910052594 sapphire Inorganic materials 0.000 claims description 16
- 239000010980 sapphire Substances 0.000 claims description 16
- 150000002739 metals Chemical class 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 411
- 238000000034 method Methods 0.000 description 20
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- 239000010432 diamond Substances 0.000 description 6
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 6
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- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229940044658 gallium nitrate Drugs 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910003962 NiZn Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
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- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
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- 238000003892 spreading Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- 230000005540 biological transmission Effects 0.000 description 1
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
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Abstract
揭露一种发光二极管和其应用。所述发光二极管包含:透明衬底,具有第一表面、第二表面以及侧表面;第一导电型半导体层,位于所述透明衬底的所述第一表面上;第二导电型半导体层,位于所述第一导电型半导体层上;作用层,位于所述第一导电型半导体层与所述第二导电型半导体层之间;第一衬垫,电连接到所述第一导电型半导体层;以及第二衬垫,电连接到所述第二导电型半导体层。此外,由所述作用层产生的光通过所述透明衬底的所述第二表面发射到所述透明衬底外部,并且所述发光二极管在至少一个轴向方向上具有至少140度的光束角。因此,可以提供一种适合于背光单元或表面照明设备的发光二极管。
Description
技术领域
本发明涉及一种发光二极管和其应用,并且更具体地说,涉及一种具有改良的光束角的倒装芯片型发光二极管和其应用。
背景技术
已开发氮化镓(GaN)类发光二极管,且GaN类LED已经广泛地用于各种应用中,包括全色LED显示器、LED交通标志牌、背光单元、照明装置等等。
一般来说,氮化镓类发光二极管通过使外延层在例如蓝宝石衬底等衬底上生长来形成,并且包含N型半导体层、P型半导体层以及插入其间的作用层。另一方面,将N-电极衬垫形成于N型半导体层上并且将P-电极衬垫形成于P型半导体层上。发光二极管通过电极衬垫电连接到外部电源并由此进行操作。这里,电流通过半导体层从P-电极衬垫流动到N-电极衬垫。
另一方面,倒装芯片型发光二极管用于防止P-电极衬垫的光损失,同时提高热耗散效率。倒装芯片型发光二极管发光穿过生长衬底,并因此相比于发光穿过其外延层的垂直型发光二极管,可以减少P-电极衬垫的光损失。此外,侧向型发光二极管被配置成将热通过例如蓝宝石衬底等生长衬底排放并因此具有低的热耗散效率。相反,倒装芯片型发光二极管通过电极衬垫排放热并因此具有高的热耗散效率。
此外,垂直型发光二极管通过从外延层去除例如蓝宝石衬底等生长衬底来构造以提高光提取效率。具体地说,垂直型发光二极管可以通过将半导体层的暴露的表面纹理化来防止光因全内反射而损失。
另一方面,在特定应用中,具体地说,在需要光照射在如背光单元或薄片照明设备中的广泛区域上的应用中,光束角是一个重要的问题。
一般来说,常规的倒装芯片型发光二极管具有约120°的光束角,并且典型的垂直型发光二极管因表面纹理化而具有小于约120°的光束角。因此,在现有技术中,使用模制构件或另外的二级透镜来在封装级下增加光束角。
另一方面,例如LED荧光灯等照明设备可能需要根据方向具有不同光束角的LED。当多个LED安装在细长荧光灯形状的照明设备内部时,LED宜在与荧光灯的纵向方向正交的方向上具有大的光束角。
发明内容
技术问题
本发明的实施例提供一种适合于背光单元或薄片照明设备的倒装芯片型发光二极管以及其应用。
本发明的实施例提供一种通过改善反射率而提高光提取效率的倒装芯片型发光二极管。
本发明的实施例提供一种具有提高的电流扩展性能的倒装芯片型发光二极管。
本发明的实施例提供一种根据方向具有不同光束角的发光二极管以及包括所述发光二极管的照明设备。
本发明的实施例提供一种具有提高的发光效率的倒装芯片型发光二极管以及包括所述发光二极管的照明设备。
技术解决方案
根据本发明的一个方面,发光二极管包含:透明衬底,具有第一表面、第二表面以及将所述第一表面与所述第二表面连接的侧表面;第一导电型半导体层,置于所述透明衬底的第一表面上;第二导电型半导体层,置于所述第一导电型半导体层上;作用层,放置于所述第一导电型半导体层与所述第二导电型半导体层之间;第一衬垫,电连接到所述第一导电型半导体层;以及第二衬垫,电连接到所述第二导电型半导体层。此外,在作用层中产生的光经由透明衬底的第二表面穿过透明衬底放出。此外,发光二极管在其至少一个轴向方向上具有140°或超过140°的光束角。
不同于典型的发光二极管,根据本发明的实施例的发光二极管在未使用透镜形状的模制构件或二级透镜下具有140°或超过140°的相对较宽的光束角。因此,根据本发明的实施例的发光二极管适合于包含薄片照明设备在内的照明设备。根据本发明的实施例的发光二极管可以不用另一包装工艺而直接用于各种应用。此外,发光二极管可在无二级透镜下使用,或可在二级透镜耦接后连同一起使用。
在一些实施例中,发光二极管可还包含覆盖透明衬底的第二表面的保形涂层。穿过第二表面发射的光穿过保形涂层放出。保形涂层可以含有磷光体并因此可以将作用层中产生的至少一部分光的波长转换。
透明衬底与保形涂层的总厚度可以在225微米到600微米范围内。此外,透明衬底的厚度可以是150微米到400微米。此外,保形涂层的厚度可以是20微米到200微米。
在一些实施例中,透明衬底的厚度可以是225微米到400微米。因为透明衬底具有225微米到400微米的厚度,所以可以提供一种无论是否存在保形涂层,都具有140°或超过140°的光束角的倒装芯片型发光二极管。如果透明衬底的厚度超出400微米,那么难以将衬底分割成个别的发光二极管芯片。
发光二极管可以在第一导电型半导体层上包含多个彼此分隔开的凸台。每一凸台包含作用层和第二导电型半导体层。
发光二极管可以还包含:反射电极,分别置于所述多个凸台上并与所述第二导电型半导体层形成欧姆接触;以及电流扩展层,覆盖所述多个凸台和所述第一导电型半导体层并具有分别置于所述多个凸台的上部区域中同时使所述反射电极暴露的开口,所述电流扩展层与第一导电型半导体层形成欧姆接触并与多个凸台隔绝。通过所述开口,第一衬垫可以电连接到电流扩展层并且第二衬垫可以电连接到反射电极。
因为电流扩展层覆盖多个凸台和第一导电型半导体层,所以发光二极管通过电流扩展层具有提高的电流扩展性能。
第一导电型半导体层可以为连续的。此外,多个凸台可以具有在一个方向上延伸的细长形状并可以彼此平行安置。电流扩展层的开口可以被放置成偏向多个凸台的同一末端。因此,可以容易地形成将通过电流扩展层的开口暴露的反射电极彼此连接的衬垫。
电流扩展层可以包含例如Al等反射金属。在此结构下,除反射电极的光反射外,可以通过电流扩展层提供光反射,从而由此可以反射穿过多个凸台的侧壁和第一导电型半导体层的光。
另一方面,每一反射电极可以包含反射金属层和阻挡金属层。此外,阻挡金属层可以覆盖反射金属层的上表面和侧表面。在此结构下,可以通过防止反射金属层暴露于外部,来防止反射金属层退化。
发光二极管可以还包含:上部绝缘层,覆盖所述电流扩展层的至少一部分并包含使所述反射电极暴露的开口;以及第二衬垫,置于所述上部绝缘层上并电连接到通过上部绝缘层的开口暴露的反射电极。
第一衬垫和第二衬垫可以具有相同形状和相同尺寸,由此有助于倒装芯片粘结。
发光二极管可以还包含下部绝缘层,所述下部绝缘层置于多个凸台与电流扩展层之间并将电流扩展层与多个凸台隔绝。下部绝缘层可以包含开口,所述开口分别置于凸台的上部区域中并使反射电极暴露。
此外,电流扩展层的每一开口可以具有比下部绝缘层的开口大的宽度,从而允许下部绝缘层的对应开口通过其被完全地暴露。也就是说,电流扩展层的侧壁可以置于下部绝缘层上。此外,发光二极管可以还包含上部绝缘层,所述上部绝缘层覆盖电流扩展层的至少一部分并包含使反射电极暴露的开口。上部绝缘层可以覆盖电流扩展层的开口的侧壁。
下部绝缘层可以是反射介电层,例如分布式布拉格反射器(DBR)。
根据本发明的另一个方面,发光二极管包含:透明衬底,具有第一表面、第二表面以及将所述第一表面与所述第二表面连接的侧表面;第一导电型半导体层,置于所述透明衬底的第一表面上;第二导电型半导体层,置于所述第一导电型半导体层上;作用层,放置于所述第一导电型半导体层与所述第二导电型半导体层之间;第一衬垫,电连接到所述第一导电型半导体层;以及第二衬垫,电连接到所述第二导电型半导体层。此外,在作用层中产生的光经由透明衬底的第二表面穿过透明衬底放出,并且透明衬底具有225μm到400微米的厚度。
根据本发明的另一个方面,发光二极管包含:透明衬底,具有第一表面、第二表面以及将所述第一表面与所述第二表面连接的侧表面;第一导电型半导体层,置于所述透明衬底的第一表面上;第二导电型半导体层,置于所述第一导电型半导体层上;作用层,置于所述第一导电型半导体层与所述第二导电型半导体层之间;第一衬垫,电连接到所述第一导电型半导体层;第二衬垫,电连接到所述第二导电型半导体层;以及覆盖透明衬底的保形涂层。此外,在作用层中产生的光穿过保形涂层放出,并且透明衬底与保形涂层的总厚度可以在225微米到600微米范围内。
此外,透明衬底的厚度可以是150微米到400微米。此外,保形涂层的厚度可以是20微米到200微米。
根据本发明的又一个方面,照明模块包含多个发光二极管,至少一个所述发光二极管包含:透明衬底,具有第一表面、第二表面以及将所述第一表面与所述第二表面连接的侧表面;第一导电型半导体层,置于所述透明衬底的第一表面上;第二导电型半导体层,置于所述第一导电型半导体层上;作用层,置于所述第一导电型半导体层与所述第二导电型半导体层之间;第一衬垫,电连接到所述第一导电型半导体层;以及第二衬垫,电连接到所述第二导电型半导体层。此外,在作用层中产生的光经由透明衬底的第二表面穿过透明衬底放出。此外,至少一个发光二极管在其至少一个轴向方向上具有140°或超过140°的光束角。
透明衬底具有225微米到400微米的厚度。
至少一个发光二极管可还包含覆盖透明衬底的第二表面的保形涂层。透明衬底与保形涂层的总厚度可以在225微米到600微米范围内。这里,保形涂层的厚度可以是20微米到200微米。
根据本发明的又一个方面,提供一种包含所述照明模块的照明设备。所述照明模块包含多个发光二极管,至少一个所述发光二极管具有与上述相同的结构。
根据本发明的又一个方面,背光单元包含多个发光二极管,至少一个所述发光二极管包含:透明衬底,具有第一表面、第二表面以及将所述第一表面与所述第二表面连接的侧表面;第一导电型半导体层,置于所述透明衬底的第一表面上;第二导电型半导体层,置于所述第一导电型半导体层上;作用层,置于所述第一导电型半导体层与所述第二导电型半导体层之间;第一衬垫,电连接到所述第一导电型半导体层;以及第二衬垫,电连接到所述第二导电型半导体层。此外,在作用层中产生的光经由透明衬底的第二表面穿过透明衬底放出。此外,至少一个发光二极管在其至少一个轴向方向上具有140°或超过140°的光束角。
透明衬底可以具有225微米到400微米的厚度。
至少一个发光二极管可以还包含覆盖透明衬底的第二表面的保形涂层,并且透明衬底与保形涂层的总厚度可以在225微米到600微米范围内。此外,保形涂层的厚度可以是20微米到200微米。
根据本发明的又一个方面,发光二极管包含:透明衬底,具有第一表面、第二表面以及将所述第一表面与所述第二表面连接的侧表面;第一导电型半导体层,置于所述透明衬底的第一表面上;第二导电型半导体层,置于所述第一导电型半导体层上;作用层,置于所述第一导电型半导体层与所述第二导电型半导体层之间;第一衬垫,电连接到所述第一导电型半导体层;以及第二衬垫,电连接到所述第二导电型半导体层。此外,在作用层中产生的光经由透明衬底的第二表面穿过透明衬底放出,并且透明衬底具有包含至少一个锐角的多边形形状。
因为靠近锐角部分放出的光的量增加,所以发光二极管具有提高的光提取效率并允许其光束角进行调节。因此,可以提供根据方向具有不同光束角的发光二极管。
透明衬底可以具有100微米到400微米的厚度。此外,包含至少一个锐角的多边形形状可以是三角形形状、平行四边形形状或五边形形状。此外,透明衬底可以是蓝宝石衬底。此外,透明衬底可以具有平行四边形并且透明衬底的侧表面可以由一组m型平面构成。因为透明衬底的侧表面由此群m型平面构成,所以可以沿着此群m型平面的晶体平面进行晶片划线,由此防止在衬底分成个别的发光二极管期间发生例如碎裂等破坏。
发光二极管可以还包含置于第二导电型半导体层上并反射作用层中产生的光的反射电极。发光二极管允许光被反射电极反射,由此提高了发光效率。
另一方面,作用层和第二导电型半导体层可以限制性地置于第一导电型半导体层的上部区域内,使得第一导电型半导体层的上表面沿着衬底的边缘暴露。
发光二极管可以还包含将第一衬垫连接到第一导电型半导体层的电流扩展层,并且第一衬垫和第二衬垫可以置于第二导电型半导体层上面。此结构可以减少第一衬垫与第二衬垫之间的高度差异,由此有助于倒装芯片粘结。
电流扩展层可以包含反射金属。在发光二极管中,光被反射电极和电流扩展层反射,由此进一步提高了发光二极管的发光效率。
发光二极管可以还包含将电流扩展层与反射电极隔绝的下部绝缘层。所述下部绝缘层包含使第一导电型半导体层暴露的开口并且电流扩展层可以通过下部绝缘层的开口连接到第一导电型半导体层。
在一些实施例中,开口可以分别沿着衬底的边缘呈细长形状安置。此外,与其它角度部分相比,在至少一个锐角部分上开口可以彼此分隔得更远。在此结构下,发光二极管可以防止电流集聚在锐角部分。
在其它实施例中,开口可以包含沿着衬底的边缘彼此分隔开的多个孔洞。孔洞之间的距离可以随着孔洞接近至少一个锐角部分而增加。在此结构下,可以减轻锐角部分的电流集聚。
发光二极管可以经形成以具有倾斜的侧表面,使得第一表面具有比第二表面大的面积。发光二极管的倾斜侧表面进一步提高了光提取效率。
在一些实施例中,发光二极管可以还包含覆盖衬底的第二表面的保形涂层。透明衬底与保形涂层的总厚度可以在225微米到600微米范围内,从而发光二极管具有增加的光束角。
根据本发明的又一个方面,提供一种包含多个发光二极管的照明设备。在发光二极管中,至少一个发光二极管包含:透明衬底,具有第一表面、第二表面以及将所述第一表面与所述第二表面连接的侧表面;第一导电型半导体层,置于所述透明衬底的第一表面上;第二导电型半导体层,置于所述第一导电型半导体层上;作用层,置于所述第一导电型半导体层与所述第二导电型半导体层之间;第一衬垫,电连接到所述第一导电型半导体层;以及第二衬垫,电连接到所述第二导电型半导体层。此外,在作用层中产生的光经由透明衬底的第二表面穿过透明衬底放出,并且透明衬底具有包含至少一个锐角的多边形形状。
根据本发明的又一个方面,发光二极管包含:第一导电型半导体层,置于具有第一表面和与第一表面相对的第二表面的衬底的第一表面上;凸台,包含依序堆叠在第一导电型半导体层上的作用层和第二导电型半导体层,所述凸台在平面图中具有包含锐角和钝角的多边形形状并且使第一导电型半导体层暴露于其外部;下部绝缘层,覆盖凸台并包含多个与凸台外侧相邻放置并使第一导电型半导体层暴露的第一开口和使第二导电型半导体层的上表面暴露的第二开口;第一衬垫,通过第一开口电连接到第一导电型半导体层;以及第二衬垫,通过第二开口电连接到第二导电型半导体层。此外,靠近凸台的锐角放置的第一开口之间的距离超过靠近凸台的钝角放置的第一开口之间的距离。在此结构下,发光二极管可以防止电流集聚。
有利作用
根据本发明的实施例,倒装芯片型发光二极管具有相对较宽的光束角。因此,倒装芯片型发光二极管可以适用于背光单元或薄片照明设备中。具体地说,在具有宽光束角的发光二极管的配置中,可以减少发光二极管的数目或实现背光单元或照明模块的细长结构。
根据本发明的实施例,倒装芯片型发光二极管通过提高反射率而具有提高的光提取效率,并具有提高的电流扩展性能。
根据本发明的实施例,倒装芯片型发光二极管采取一种包含至少一个锐角部分的衬底,由此提高了发光效率同时显示根据方向不同的光束角。此外,照明设备采用此类发光二极管,由此实现了广泛区域的照射同时减少光损失。
附图说明
图1到图5为说明一种制造根据本发明的一个实施例的发光二极管的方法的图,其中(a)展示平面图并且(b)展示沿着线A-A获取的截面图。
图6为凸台结构的修改的平面图。
图7为根据本发明的一个实施例的发光二极管的截面图。
图8为根据本发明的另一个实施例的发光二极管的截面图。
图9到图12为描绘视衬底厚度而定的发光二极管的光束角特征的图。
图13为描绘发光二极管的光束角与衬底厚度之间的关系的图。
图14到图17为描绘视衬底厚度而定的每一个具有保形涂层的发光二极管的光束角特征的图。
图18为描绘每一个具有保形涂层的发光二极管的光束角与衬底厚度之间的关系的图。
图19展示采用典型发光二极管的发光二极管模块和采用根据本发明的发光二极管的发光二极管模块的示意性截面图。
具体实施方式
下文中,将参考附图来更详细地描述本发明的实施例。以下实施例是通过实例提供,从而将本发明的精神完全传达给本发明所涉及的领域的技术人员。因此,本发明不限于本文中所揭露的实施例并且还可以用不同形式实现。在图式中,元件的宽度、长度、厚度等等可能出于清楚和描述的目的而被放大。贯穿本说明书,相似的参考数字指代具有相同或类似功能的相似元件。
首先,将描述一种制造发光二极管的方法,以帮助理解根据本发明的一个实施例的倒装芯片型发光二极管的结构。
图1到图5为说明一种制造根据本发明的一个实施例的发光二极管的方法的图,其中(a)展示平面图并且(b)展示沿着线A-A获取的截面图。
首先,参看图1,第一导电型半导体层(23)形成于衬底(21)上,并且作用层(25)和第二导电型半导体层(27)置于第一导电型半导体层(23)上。衬底(21)为用于GaN类半导体层生长的衬底并且可以是例如蓝宝石衬底、碳化硅衬底、氮化镓衬底、氮化铟镓衬底、氮化铝镓衬底、氮化铝衬底、氧化镓衬底等等。具体地说,衬底可以是蓝宝石衬底。
第一导电型半导体层(23)可以是掺杂有n型杂质的氮化物类半导体层。在一个实施例中,第一导电型半导体层(23)可以是掺杂有Si的InxAlyGa1-x-yN层(0≤x≤1,0≤y≤1,0≤x+y≤1)。举例来说,第一导电型半导体层(23)可以是掺杂Si的GaN层。第二导电型半导体层(27)可以是掺杂有p型杂质的氮化物类半导体层。在一个实施例中,第二导电型半导体层(27)可以是掺杂有Mg或Zn的InxAlyGa1-x-yN层(0≤x≤1,0≤y≤1,0≤x+y≤1)。举例来说,第二导电型半导体层(27)可以是掺杂Mg的GaN层。作用层(25)可以包含InxAlyGa1-x-yN(0≤x≤1,0≤y≤1,0≤x+y≤1)的阱层并且可以具有单量子阱结构或多量子阱结构。在一个实施例中,作用层(25)可以具有InGaN、GaN或AlGaN层的单量子阱结构或InGaN/GaN层、GaN/AlGaN层或AlGaN/AlGaN层的多量子阱结构。
第一导电型半导体层(23)、作用层(25)和第二导电型半导体层(27)可以通过金属有机化学气相沉积(MOCVD)或分子束外延法(MBE)形成。
多个凸台(M)可以彼此分隔地形成于第一导电型半导体层(23)上,并且每一凸台(M)可以包含作用层(25)和第二导电型半导体层(27)。作用层(25)置于第一导电型半导体层(23)与第二导电型半导体层(27)之间。另一方面,反射电极(30)置于每一凸台(M)上。
多个凸台(M)可以通过利用金属有机化学气相沉积等等使包含第一导电型半导体层(23)、作用层(25)和第二导电型半导体层(27)的外延层在衬底(21)的第一表面上生长,接着将第二导电型半导体层(27)和作用层(25)图案化,从而暴露第一导电型半导体层(23)来形成。多个凸台(M)可以使用光阻回流技术形成以具有倾斜的侧表面。凸台(M)的侧表面的倾斜型态提高了在作用层(25)中产生的光的提取效率。
如所示,多个凸台(M)可以具有在一个方向上延伸的细长形状并彼此平行安置。此类形状简化了具有相同形状的多个凸台(M)在衬底(21)上的多个芯片区域中的形成。
另一方面,反射电极(30)可以在多个凸台(M)形成后形成于相应凸台(M)上,但不限于此。或者,反射电极可以在形成凸台(M)前、在使第二导电型半导体层(27)生长后形成于第二导电型半导体层(27)上。反射电极(30)覆盖凸台(M)的上表面的大部分区域并且在平面图中具有与凸台(M)形状相同的形状。
反射电极(30)包含反射层(28)并且可以还包含阻挡层(29)。阻挡层(29)可以覆盖反射层(28)的上表面和侧表面。举例来说,阻挡层(29)可以通过形成反射层(28)的图案,接着在其上形成阻挡层(29)来形成以覆盖反射层(28)的上表面和侧表面。举例来说,反射层(28)可以通过Ag、Ag合金、Ni/Ag、NiZn/Ag或TiO/Ag层的沉积和图案化来形成。另一方面,阻挡层(29)可以由Ni、Cr、Ti、Pt或其组合形成并防止金属材料在反射层中扩散或污染。
在形成多个凸台(M)后,还可以蚀刻第一导电型半导体层(23)的边缘。结果,可以暴露衬底(21)的上表面。第一导电型半导体层(23)还可以经形成以具有倾斜的侧表面。
如图1所示,多个凸台(M)可以限制性地放置在第一导电型半导体层(23)的上部区域内。具体来说,多个凸台(M)可以呈岛形状放置于第一导电型半导体层(23)的上部区域上。或者,凸台(M)可以在一个方向上延伸以达到第一导电型半导体层(23)的上表面的边缘,如图6所示。也就是说,多个凸台(M)的下表面在一个方向上的边缘可以与第一导电型半导体层(23)在所述一个方向上的边缘重合。在此结构下,第一导电型半导体层(23)的上表面被多个凸台(M)分割。
参看图2,下部绝缘层(31)经形成以覆盖多个凸台(M)和第一导电型半导体层(23)。下部绝缘层(31)包含开口(31a,31b)以允许在穿过其的特定区域中电连接到第一导电型半导体层(23)和第二导电型半导体层(27)。举例来说,下部绝缘层(31)可以包含使第一导电型半导体层(23)暴露的开口(31a)和使反射电极(30)暴露的开口(31b)。
开口(31a)可以置于凸台(M)与衬底(21)的靠近边缘之间,并且可以具有沿着凸台(M)延伸的细长形状。另一方面,开口(31b)限制性地置于凸台(M)的上部区域中以偏向凸台的同一末端。
下部绝缘层(31)可以由例如SiO2等氧化物、例如SiNx等氮化物或例如MgF2等绝缘材料通过化学气相沉积(CVD)等等形成。下部绝缘层(31)可以由单一层或多个层构成。此外,下部绝缘层(31)可以形成为分布式布拉格反射器(DBR),其中低折射率材料层和高折射率材料层交替堆叠在彼此之上。举例来说,具有高反射性的绝缘反射层可以通过堆叠例如SiO2/TiO2层或SiO2/Nb2O5层来形成。
参看图3,电流扩展层(33)形成于下部绝缘层(31)上。电流扩展层(33)覆盖多个凸台(M)和第一导电型半导体层(23)。此外,电流扩展层(33)包含开口(33a),所述开口分别置于凸台(M)的上部区域中并使反射电极(30)暴露。电流扩展层(33)可以通过下部绝缘层(31)的开口(31a)与第一导电型半导体层(23)形成欧姆接触。电流扩展层(33)通过下部绝缘层(31)与多个凸台(M)和反射电极(30)隔绝。
电流扩展层(33)的每一开口(33a)具有比下部绝缘层(31)的开口(31b)大的面积以防止电流扩展层(33)连接到反射电极(30)。因此,开口(33a)具有置于下部绝缘层(31)上的侧壁。
除了开口(33a)外,电流扩展层(33)实质上在衬底(31)的整个上表面上形成。因此,电流可以容易地通过电流扩展层(33)扩展。电流扩展层(33)可以包含高反射金属层,例如Al层,并且高反射金属层可以形成于例如Ti、Cr或Ni层等粘结层上。此外,具有Ni、Cr、Au等等单一层或复合层结构的保护层可以形成于高反射金属层上。电流扩展层33可以具有例如Ti/Al/Ti/Ni/Au的多层结构。
参看图4,上部绝缘层(35)形成于电流扩展层(33)上。上部绝缘层(35)包含使电流扩展层(33)暴露的开口(35a)和使反射电极(30)暴露的开口(35b)。开口(35a)可以在相对于凸台(M)的纵向方向的垂直方向上具有细长形状,并具有比开口(35b)大的面积。开口(35b)使反射电极(30)暴露,其是通过电流扩展层(33)的开口(33a)和下部绝缘层(31)的开口(31b)暴露。开口(35b)具有比电流扩展层(33)的开口(33a)狭窄的面积和比下部绝缘层(31)的开口(31b)大的面积。因此,电流扩展层(33)的开口(33a)的侧壁可以被上部绝缘层(35)覆盖。
上部绝缘层(35)可以由氧化物绝缘层、氮化物绝缘层或例如聚酰亚胺、铁氟龙、聚对二甲苯基等聚合物形成。
参看图5,第一衬垫(37a)和第二衬垫(37b)形成于上部绝缘层(35)上。第一衬垫(37a)通过上部绝缘层(35)的开口(35a)连接到电流扩展层(33),并且第二衬垫(37b)通过上部绝缘层(35)的开口(35b)连接到反射电极(30)。第一衬垫(37a)和第二衬垫(37b)可以用作连接用于将发光二极管安装在底座、包装或印刷电路板上的凸块的衬垫或用于SMT的衬垫。
第一衬垫和第二衬垫(37a,37b)可以同时通过例如光刻法和蚀刻工艺或剥离工艺等相同工艺形成。第一衬垫和第二衬垫(37a,37b)可以包含由例如Ti、Cr、Ni等形成的粘结层和由Al、Cu、Ag、Au等形成的高导电性金属层。
随后,衬底(21)被分成个别的发光二极管芯片,由此提供成品发光二极管芯片。此时,衬底(21)可以经受薄化工艺(thinningprocess),以在分成个别发光二极管芯片之前具有较薄的厚度。
下文中,将参考图7详细地描述根据本发明的一个实施例的发光二极管(100)的结构。
所述发光二极管包含衬底(21)、第一导电型半导体层(23)、作用层(25)、第二导电型半导体层(27)、第一衬垫(37a)以及第二衬垫(37b),并且可以还包含反射电极(30)、电流扩展层(33)、下部绝缘层(31)、上部绝缘层(35)以及凸台(M)。
衬底(21)可以是用于氮化镓类外延层生长的生长衬底,例如蓝宝石衬底、碳化硅衬底或氮化镓衬底。衬底(21)可以包含第一表面(21a)、第二表面(21b)以及侧表面(21c)。第一表面(21a)是半导体层在上面生长的平面,并且第二表面(21b)是在作用层(25)中产生的光放到外部所通过的平面。侧表面(21c)将第一表面(21a)连接到第二表面(21b)。衬底(21)的侧表面(21c)可以垂直于第一表面(21a)和第二表面(21b),但不限于此。或者,衬底的侧表面(21d)可以相对于其倾斜。举例来说,如图7中的虚线所指示,衬底(21)可以具有倾斜的侧表面(21d),使得第一表面(21a)具有比第二表面(21b)大的面积。在此实施例中,衬底(21)可以具有225微米到400微米的厚度(t1)。
第一导电型半导体层(23)置于衬底(21)的第一表面(21a)上。第一导电型半导体层(23)是连续的,并且作用层(25)和第二导电型半导体层(27)置于第一导电型半导体层(23)上。具体地说,多个凸台(M)彼此分隔开置于第一导电型半导体层(23)上。如参考图1所说明,凸台(M)包括作用层(25)和第二导电型半导体(27)并具有朝向一侧延伸的细长形状。此处,凸台(M)由氮化镓化合物半导体层的堆叠形成。如图1所示,凸台(M)可以限制性地置于第一导电型半导体层(23)的上部区域内。或者,如图6中所示,凸台(M)可以延伸到第一导电型半导体层(23)的上表面在一个方向上的边缘,从而第一导电型半导体层(23)的上表面可以分成多个区域。在此结构下,发光二极管可以减轻靠近凸台(M)的拐角处的电流集聚,由此进一步提高了电流扩展性能。
反射电极(30)分别置于多个凸台(M)上以与第二导电型半导体层(27)形成欧姆接触。如参考图1所说明,反射电极(300可以包含反射层(28)和阻挡层(29),并且阻挡层(29)可以覆盖反射层(28)的上表面和侧表面。
电流扩展层(33)覆盖多个凸台(M)和第一导电型半导体层(23)。电流扩展层(33)具有开口(33a),所述开口分别置于相应凸台(M)的上部区域中,使得通过其使反射电极(30)暴露。电流扩展层(33)可以覆盖凸台(M)的整个区域,除了其中形成开口(33a)的凸台(M)的上部区域的一些区域,并且也可以覆盖第一导电型半导体层(23)的整个区域。电流扩展层(33)还与第一导电型半导体层(23)形成欧姆接触,并与多个凸台(M)隔绝。电流扩展层(33)可以包含例如Al等反射金属。
电流扩展层(33)可以通过下部绝缘层(31)与多个凸台(M)隔绝。举例来说,下部绝缘层(31)可以插入多个凸台(M)与电流扩展层(33)之间,以将电流扩展层(33)与多个凸台(M)隔绝。此外,下部绝缘层(31)可以具有开口(31b),所述开口置于相应凸台(M)的上部区域内,使得通过其使反射电极(30)暴露;以及开口(31a),通过所述开口使第一导电型半导体层(23)暴露。电流扩展层(33)可以通过开口(31a)连接到第一导电型半导体层(23)。下部绝缘层(31)的开口(31b)具有比电流扩展层(33)的开口(33a)小的面积,并且通过开口(33a)被完全地暴露。
上部绝缘层(35)覆盖电流扩展层(33)的至少一部分。上部绝缘层(35)具有开口(35b),所述开口使反射电极(30)暴露。此外,上部绝缘层(35)可以具有开口(35a),所述开口使电流扩展层(33)暴露。上部绝缘层(35)可以覆盖电流扩展层(33)的开口(33a)的侧壁。
第一衬垫(37a)可以置于电流扩展层(33)上并且例如可以通过上部绝缘层(35)的开口(35a)连接到电流扩展层(33)。第一衬垫(37a)通过电流扩展层(33)电连接到第一导电型半导体层(23)。此外,第二衬垫(37b)连接到通过开口(35b)暴露的反射电极(30)并通过反射电极(30)电连接到第二导电型半导体层(27)。
根据此实施例,因为衬底(21)具有225微米或超过225微米的厚度(t1),所以发光二极管(100)的光束角可以增加到140°或超过140°。此外,因为电流扩展层(33)覆盖凸台(M)并实质上覆盖凸台(M)之间的第一导电型半导体层(23)的整个区域,所以电流可以容易地通过电流扩展层(33)扩展。
此外,电流扩展层(23)包含例如Al层等反射金属层,或下部绝缘层作为绝缘反射层而形成,从而未被反射电极(30)反射的光可以被电流扩展层(23)或下部绝缘层(31)反射,由此提高了光提取效率。
图8是根据本发明的另一个实施例的发光二极管(200)的截面图。
除了保形涂层(50)置于衬底(21)上外,根据此实施例的发光二极管(200)大体上类似于图7的发光二极管(100)。保形涂层(50)均匀地覆盖衬底(21)的第二表面(21b)并且也可以覆盖其侧表面(21c)。保形涂层(50)可以含有例如磷光体等波长转换材料。
此外,衬底(21)的厚度(t1)与保形涂层(50)的厚度(t2)的总和可以在225微米到600微米范围内。举例来说,保形涂层(50)可以具有20微米到200微米的厚度(t2)。此外,衬底(21)的厚度(t1)可以视保形涂层的厚度(t2)而变化,例如可以在150微米到400微米范围内。
当衬底(21)的厚度与保形涂层(50)的厚度的总和(t1+t2)大于或等于225微米时,发光二极管(200)的光束角可以增加到140°或超过140°。
图9到图12为描绘视衬底厚度而定的发光二极管的光束角特征的图。在每个图中,实线指示在第一轴线(x轴)上的光束角特征,并且虚线指示在与第一轴线正交的第二轴线(y轴)上的光束角特征。
作为衬底(21),使用蓝宝石衬底,并且用不同厚度的蓝宝石衬底(21)制造具有如图7中所示的结构的发光二极管。发光二极管具有1毫米×1毫米的尺寸并且蓝宝石衬底(21)分别具有约80微米、150微米、250微米以及400微米的厚度。
参看图9到图12,可以证实光束分布随着衬底(21)的厚度从80微米增加到250微米而加宽。但是,当衬底(21)的厚度从250微米增加到400微米时,光束分布无显著差异。
图13是描绘图9到图12的发光二极管的光束角与衬底厚度之间的关系的图。术语“光束角”意谓其中显示1/2或超过1/2的最大光通量的光通量的角范围。“光束角”对应于在光束分布图中正规化强度变成0.5的从最小角到最大角的角度。
参看图13,随着衬底(21)的厚度(t1)增加到250微米,光束角增加到约140°并且当衬底(21)的厚度(t1)为250微米或超过250微米时,光束角未显著改变。
因此,当衬底(21)的厚度(t1)设定成250微米时,在衬底(21)上无其它透明膜下光束角可以维持在140°,并且甚至当衬底的厚度(t1)增加时光束角也未显著改变。
图14到图17为描绘视各种衬底厚度(t1)而定,每一个具有保形涂层的发光二极管(200)的光束角特征的图。在每个图中,实线指示在第一轴线(x轴)上的光束角特征,并且虚线指示在与第一轴线正交的第二轴线(y轴)上的光束角特征。
如参考图9到图12所描述,使用具有不同厚度t1的蓝宝石衬底(21)并且在每一衬底(21)上形成保形涂层(50)到约75微米的厚度t2,由此制造发光二极管(200),如图8中所示。
参看图14到图17,可以证实光束分布随着衬底(21)的厚度从80微米增加到150微米而显著改变。此外,随着衬底(21)的厚度从150微米增加到400微米,尽管光通量倾向于稍微减少接近0°,但光束分布未显著改变。
图18是描绘图14到图17的发光二极管(200)的光束角与衬底厚度(t1)之间的关系的图,每一发光二极管都包含保形涂层(50)。
参看图18,随着衬底(21)的厚度(t1)增加到150微米,光束角增加到约143°,并且当衬底(21)的厚度(t1)为150微米或超过150微米时,光束角未显著改变。因此,可以看出,当衬底(21)的厚度(t1)与保形涂层(50)的厚度(t2)的总和达到225微米或超过225微米时,光束角最终达到140°或超过140°的值。
因此,当衬底(21)的厚度与保形涂层(50)的厚度的总和设定成225微米或超过225微米时,发光二极管(200)可以具有140°或超过140°的光束角。
从实验结果预期,在无保形涂层(50)下即使当衬底(21)具有约225微米的厚度时,也将提供具有140°或超过140°的光束角的发光二极管(200)。
图19展示采用典型发光二极管(10)的发光二极管模块(300a)和采用根据本发明的发光二极管(100)的发光二极管模块(300b,300c)的截面示意图。此处,发光二极管模块(300a,300b,300c)将通过实例展示为用于照射液晶显示面板(400)的背光单元中。
参看图19,典型发光二极管(10)具有约120°的光束角(θ1),而根据本发明的发光二极管(100)具有约140°或超过140°的光束角(θ2)。
发光二极管模块与液晶显示面板(400)之间的距离可以由d表示,发光二极管的间距可以由p表示,并且发光二极管的光束角可以由θ表示。另一方面,当发光二极管被配置成防止其光束角彼此重叠时,间距(p)指示单一发光二极管所照射的液晶显示面板(400)的一个区域的宽度并由以下等式(1)表示。
(等式1)
p=2·d·tan(θ/2)
因此,典型发光二极管模块(300a)的间距(p1)和根据本发明的发光二极管模块(300b)的间距(p2)由等式(2)和等式(3)表示。
(等式2)
p1=2·d1·tan(θ1/2)
(等式3)
p2=2·d2·tan(θ2/2)
此处,因为发光二极管(100)的光束角(θ2)超过发光二极管(10)的光束角(θ1)并且θ2/2小于90°,所以建立以下等式(4)。
(等式4)
tan(θ1/2)<tan(θ2/2)
因此,如果等式(2)和等式(3)中d1=d2,那么建立以下等式(5)。
(等式5)
p2>p1(当d1=d2时)
也就是说,当图19(a)和(b)中所示的发光二极管模块(300a,300b)与液晶显示面板(400)分隔相同距离(d1=d2)并照射液晶显示面板(400)的相同区域时,根据本发明的发光二极管模块(300b)允许发光二极管(100)以比典型发光二极管模块(300a)更宽的间隔配置。因此,可以减少发光二极管模块(300b)中发光二极管(100)的数目。
另一方面,如图19(a)和(c)中所示,当典型发光二极管模块(300a)的发光二极管(10)的间距(p1)与根据本发明的发光二极管模块的发光二极管(100)的间距(p3)相同时,建立以下等式(6)。
(等式6)
d3<d1(当p1=p3时)
也就是说,当发光二极管模块(300,300c)包括相同数目的发光二极管时,根据本发明的发光二极管模块(300c)可以比发光二极管模块(300a)放置得更接近液晶显示面板(400),由此实现了背光单元和液晶显示器的厚度的减少。
本文中,虽然发光二极管模块(300a,300b,300c)展示为用于背光单元中,但发光二极管模块(300a,300b,300c)还可以用作照明设备的照明模块。在此情况下,照明模块(300a,300b,300c)可以照射照明设备的漫射板(相当于400),并且如上所述,根据本发明的发光模块可以使用较少数目的发光二极管照射漫射板的相同区域,或允许发光二极管比典型发光模块放置得更接近漫射板。
然后,将描述一种制造发光二极管的方法以帮助理解根据本发明的另一个实施例的倒装芯片型发光二极管的结构。
图20到图24为说明制造根据本发明的一个实施例的发光二极管的方法的图,其中(a)展示平面图并且(b)展示沿着线A-A获取的截面图。
首先,参看图20,第一导电型半导体层(123)形成于衬底(121)上,并且作用层(125)和第二导电型半导体层(127)置于第一导电型半导体层(123)上。衬底(121)是用于氮化镓类半导体层生长的衬底并且可以是例如蓝宝石衬底、碳化硅衬底或氮化镓衬底。具体地说,衬底(121)可以是蓝宝石衬底。虽然衬底可以呈能够提供多个发光二极管的大的晶片形式提供,但图20展示个别分离的最终发光二极管之一的衬底的一部分。在最终发光二极管中,衬底(121)可以具有含有锐角的平行四边形形状,例如菱形形状,但不限于此。或者,衬底可以具有含有锐角的多种多边形形状任一个,例如三角形形状、五边形形状等等。
第一导电型半导体层(123)可以是掺杂有n型杂质的氮化物类半导体层。在一个实施例中,第一导电型半导体层(123)可以是掺杂有Si的InxAlyGa1-x-yN层(0≤x≤1,0≤y≤1,0≤x+y≤1)。举例来说,第一导电型半导体层(123)可以是掺杂Si的GaN层。第二导电型半导体层(127)可以是掺杂有p型杂质的氮化物类半导体层。在一个实施例中,第二导电型半导体层(127)可以是掺杂有Mg或Zn的InxAlyGa1-x-yN层(0≤x≤1,0≤y≤1,0≤x+y≤1)。举例来说,第二导电型半导体层(27)可以是掺杂Mg的GaN层。作用层(125)可以包含InxAlyGa1-x-yN(0≤x≤1,0≤y≤1,0≤x+y≤1)的阱层并且可以具有单量子阱结构或多量子阱结构。在一个实施例中,作用层(125)可以具有InGaN、GaN或AlGaN层的单量子阱结构或InGaN/GaN层、GaN/AlGaN层或AlGaN/AlGaN层的多量子阱结构。
第一导电型半导体层(123)、作用层(125)和第二导电型半导体层(127)可以通过金属有机化学气相沉积(MOCVD)或分子束外延法(MBE)形成。
凸台可以形成于第一导电型半导体层(123)上并且第一导电型半导体层(123)的一些区域沿着凸台的边缘暴露。如图20所示,第一导电型半导体层(123)的上表面可以沿着最终发光二极管的衬底(121)的边缘暴露,并且作用层(125)和第二导电型半导体层(127)可以限制性地置于第一导电型半导体层(123)的上部区域内。
凸台可以通过利用金属有机化学气相沉积等使包含第一导电型半导体层(123)、作用层(125)和第二导电型半导体层(127)的半导体堆叠结构(126)在衬底(121)的第一表面上生长,随后将第二导电型半导体层(127)和作用层(125)图案化从而暴露第一导电型半导体层(123)来形成。凸台可以使用光阻回流技术形成以具有倾斜的侧表面。凸台的侧表面的倾斜型态提高了在作用层(125)中产生的光的提取效率。此外,凸台具有在平面图中类似于衬底(121)的形状的形状。举例来说,凸台具有在平面图中类似于衬底(121)的至少一个锐角。在平面图中凸台可以具有包含一对彼此面对的钝角和一对彼此面对的锐角的四边形形状。钝角可以具有相同的值并且锐角可以具有相同的值。凸台的此类平面形状可以是菱形形状或菱形形状。
凸台的一个侧表面可以垂直于衬底(121)的平坦区域。在一个实施例中,当衬底(121)是蓝宝石衬底时,凸台的一个侧表面可以对准在m-型平面上。半导体堆叠结构(126)的平面形状也可以类似于凸台的平面形状。
另一方面,反射电极(130)形成于第二导电型半导体层(127)上。反射电极(130)可以在形成凸台之后形成于凸台上,但不限于此。或者,反射电极可以在形成凸台之前在第二导电型半导体层(127)生长之后形成于第二导电型半导体层(127)上。反射电极(130)覆盖第二导电型半导体层的上表面的大部分区域并且在平面图中具有实质上与凸台的形状相同的形状。
反射电极(130)包含反射层(128)并且可以还包含阻挡层(129)。阻挡层(129)可以覆盖反射层(128)的上表面和侧表面。举例来说,阻挡层(129)可以通过形成反射层(128)的图案,接着在其上形成阻挡层(129)来形成以覆盖反射层(128)的上表面和侧表面。举例来说,反射层(128)可以通过Ag、Ag合金、Ni/Ag、NiZn/Ag或TiO/Ag层的沉积和图案化来形成。另一方面,阻挡层(129)可以由Ni、Cr、Ti、Pt或其组合形成并防止金属材料在反射层(128)中扩散或污染。
在形成凸台之后,第一导电型半导体层(123)的边缘还可以经蚀刻以暴露衬底(121)的上表面。此处,第一导电型半导体层(123)还可以经形成以具有倾斜的侧表面。
参看图21,下部绝缘层(131)经形成以覆盖第一导电型半导体层(123)和反射电极(130)。下部绝缘层(131)包含开口(131a,131b)以允许在穿过其的特定区域中电连接到第一导电型半导体层(123)和第二导电型半导体层(127)。举例来说,下部绝缘层(131)可以包含使第一导电型半导体层(123)暴露的开口(131a)和使反射电极(130)暴露的开口(131b)。
开口(131a)可以在反射电极(130)周围靠近衬底(121)的边缘放置,并且可以具有沿着衬底(121)的边缘延伸的细长形状。如图21中所示,与钝角部分相比,开口(131a)在锐角部分彼此分隔更远。在此结构下,可以防止在锐角部分附近电流集聚。在一个实施例中,靠近锐角部分的开口(131a)之间的距离可以大于或等于电流扩展长度,并且靠近钝角部分的开口(131a)之间的距离小于或等于电流扩展长度(currentspreadinglength)。电流扩展长度意谓从p型电极的边缘到在施加驱动电流时电流密度减少到1/e的位置的长度。
另一方面,开口(131b)限制性地置于反射电极(130)的上部区域中并且可以偏向衬底(121)的锐角部分。在一个实施例中,开口(131b)可以具有三角形形状或梯形形状。
下部绝缘层(131)可以由例如SiO2等氧化物、例如SiNx等氮化物或例如MgF2等绝缘材料通过化学气相沉积(CVD)等等形成。下部绝缘层(131)可以由单一层或多个层构成。此外,下部绝缘层(131)可以形成为分布式布拉格反射器(DBR),其中低折射率材料层和高折射率材料层交替堆叠在彼此之上。举例来说,具有高反射性的绝缘反射层可以通过堆叠例如SiO2/TiO2层或SiO2/Nb2O5层来形成。
在此实施例中,使第一导电型半导体层(123)暴露的开口(131a)具有细长形状并且沿着衬底(121)的边缘形成。但是,应了解本发明并不限于此。举例来说,如图25中所示,使第一导电型半导体层(123)暴露的多个孔洞(131c)可以沿着衬底(121)的边缘配置。在此情况下,多个孔洞(131c)可以被配置成在孔洞从钝角部分接近锐角部分时彼此分隔得更远,由此缓解了电流集聚。此外,锐角部分的相对侧的孔洞(131c)之间的距离可以超过钝角部分相对侧的孔洞(131c)之间的距离。在一个实施例中,锐角部分相对侧的孔洞(131c)之间的距离可以大于或等于电流扩展长度,并且钝角部分相对侧的孔洞(131c)之间的距离可以小于或等于电流扩展长度。孔洞(131c)可以具有多边形形状、圆形形状或半圆形形状。
参看图22,电流扩展层(133)形成于下部绝缘层(131)上。电流扩展层(133)覆盖反射电极(130)和第一导电型半导体层(123)。此外,电流扩展层(133)包含开口(133a),所述开口置于反射电极(130)的上部区域中并使反射电极(130)暴露。电流扩展层(133)可以通过下部绝缘层(131)的开口(131a)与第一导电型半导体层(123)形成欧姆接触。电流扩展层(133)通过下部绝缘层(131)与反射电极(130)隔绝。
电流扩展层(133)的开口(133a)具有比下部绝缘层(131)的开口(131b)大的区域,以防止电流扩展层(133)连接到反射电极(130)。因此,开口(133a)具有置于下部绝缘层(131)上的侧壁。
除了开口(133a)外,电流扩展层(133)实质上在衬底(131)的整个上表面上形成。因此,电流可以容易地通过电流扩展层(133)扩散。电流扩展层(133)可以包含高反射金属层,例如Al层,并且高反射金属层可以形成于例如Ti、Cr或Ni层等粘结层上。此外,具有Ni、Cr、Au等等单一层或复合层结构的保护层可以形成于高反射金属层上。电流扩展层(133)可以具有例如Ti/Al/Ti/Ni/Au的多层结构。
参看图23,上部绝缘层(135)形成于电流扩展层(133)上。上部绝缘层(135)包含使电流扩展层(133)暴露的开口(135a)和使反射电极(130)暴露的开口(135b)。开口(135a)和开口(135b)可以彼此面对面安置,并且可以安置在衬底(121)的锐角部分附近,如图23(a)中所示。此外,开口(135b)使反射电极(130)暴露,其是通过电流扩展层(133)的开口(133a)和下部绝缘层(131)的开口(131b)暴露。开口(135b)具有比电流扩展层(133)的开口(133a)狭窄的面积。因此,电流扩展层(133)的开口(133a)的侧壁可以被上部绝缘层(135)覆盖。另一方面,开口(135b)可以具有比下部绝缘层(131)的开口(131b)小的面积。或者,开口可以具有比下部绝缘层的开口大的面积。开口(135a)可以具有颠倒的梯形形状并且开口(135b)可以具有梯形形状。
上部绝缘层(135)可以使用氧化物绝缘层、氮化物绝缘层或例如聚酰亚胺、铁氟龙、聚对二甲苯基等聚合物形成。
参看图24,第一衬垫(137a)和第二衬垫(137b)形成于上部绝缘层(135)上。第一衬垫(137a)通过上部绝缘层(135)的开口(135a)连接到电流扩展层(133),并且第二衬垫(137b)通过上部绝缘层(135)的开口(135b)连接到反射电极(130)。结果,第一衬垫(137a)可以通过电流扩展层(133)连接到第一导电型半导体层(123),并且第二衬垫(137b)可以通过反射电极(130)连接到第二导电型半导体层(127)。第一衬垫(137a)和第二衬垫(137b)可以用作连接用于将发光二极管安装在底座、包装或印刷电路板上的凸块的衬垫或用于SMT(SurfaceMountingTechnology)的衬垫。
第一衬垫和第二衬垫(137a,137b)可以同时通过例如光刻法和蚀刻工艺或剥离工艺等相同工艺形成。第一衬垫和第二衬垫(137a,137b)每一个都可以包含由例如Ti、Cr、Ni等等形成的粘结层和由Al、Cu、Ag、Au等等形成的高导电性金属层。此外,第一衬垫和第二衬垫(137a,137b)每一个可以还包含覆盖高导电性金属层的衬垫阻挡层。阻挡金属层防止例如锡(Sn)等金属元素在粘结或焊接的过程中扩散,由此防止第一衬垫和第二衬垫(137a,137b)的比电阻增加。衬垫阻挡层可以由Cr、Ni、Ti、W、TiW、Mo、Pt或其组合形成。
随后,衬底(121)被分成个别的发光二极管芯片,由此提供成品发光二极管芯片。举例来说,衬底(121)可以通过沿着一组m型平面划线来分成具有平行四边形形状的个别发光二极管芯片。结果,可以提供包含衬底(121)的发光二极管,其侧表面由所述组的m型平面构成。
另一方面,衬底(121)可以经受薄化工艺(thinningprocess)以在分成个别的发光二极管芯片之前具有更薄的厚度。此处,衬底(121)的厚度可以超过100微米,具体地说为225微米到400微米。
另一方面,可以进一步形成保形涂层(参见图27的50)以覆盖个别发光二极管芯片的衬底(121)。保形涂层(150)可以在衬底(121)分成个别芯片之前或之后形成。
下文中,将参考图26描述根据本发明的一个实施例的发光二极管(100a)的结构。
参看图26,发光二极管(100a)包含衬底(121)、第一导电型半导体层(123)、作用层(125)、第二导电型半导体层(127)、第一衬垫(137a)以及第二衬垫(137b),并且可以包含反射电极(130)、电流扩展层(133)、下部绝缘层(131)以及上部绝缘层(135)。
衬底(121)可以是用于氮化镓类外延层生长的生长衬底,例如蓝宝石衬底、碳化硅衬底或氮化镓衬底。衬底(121)可以包含第一表面(121a)、第二表面(121b)以及侧表面(121c)。第一表面(121a)是半导体层在上面生长的平面,并且第二表面(121b)是在作用层(125)中产生的光放到外部所通过的平面。侧表面(121c)将第一表面(121a)连接到第二表面(121b)。衬底(121)的侧表面(121c)可以垂直于第一表面(121a)和第二表面(121b),但不限于此。或者,衬底的侧表面(121d)可以相对于其倾斜。举例来说,如通过图26中的虚线指示,衬底(121)可以具有倾斜的侧表面(121d),使得第一表面(121a)具有比第二表面(121b)大的面积。
此外,衬底(121)可以具有包含至少一个锐角的多边形形状。举例来说,第一表面(121a)和第二表面(121b)可以具有多边形形状,例如平行四边形形状、三角形形状、五边形形状等等,如图20中所示。因为衬底(121)包含锐角,所以发光二极管通过锐角部分提高了光提取效率,同时在锐角部分增加光束角。
在此实施例中,衬底(121)的厚度可以超过100微米,尤其在225微米到400微米范围内。光束角可以随着衬底(121)的厚度增加而增加,并且当衬底(121)具有225μm或超过225μm的厚度时,光束角可以一般维持恒定。
第一导电型半导体层(123)置于衬底(121)的第一表面(121a)上。第一导电型半导体层(123)可以覆盖衬底(121)的第一表面(121a)的整个表面,但不限于此。或者,第一导电型半导体层(123)可以限制性地置于衬底(121)的上部区域内,从而允许第一表面(121a)沿着衬底(121)的边缘暴露。
包含作用层(125)和第二导电型半导体层(127)的凸台置于第一导电型半导体层(123)上。具体地说,作用层(125)和第二导电型半导体层(127)限制性地置于第一导电型半导体层(127)的上部区域内,如参考图20所描述。因此,第一导电型半导体层(127)的一些区域可以尤其沿着衬底(121)的边缘暴露。
反射电极(130)与第二导电型半导体层(127)形成欧姆接触。如参考图20所描述,反射电极(130)包括反射层(128)和阻挡层(129),所述阻挡层(129)可以覆盖反射层(128)的上表面和侧表面。
电流扩展层(133)覆盖反射电极(130)和第一导电型半导体层(123)。电流扩展层(133)具有开口(133a),所述开口置于反射电极(130)的上部区域中,使得通过其使反射电极(130)暴露。电流扩展层(133)可以覆盖反射电极(130)的整个区域,除了其中形成开口(133a)的反射电极(130)的上部区域的一部分,并且也可以覆盖第一导电型半导体层(123)的整个区域。
电流扩展层(133)也与第一导电型半导体层(123)形成欧姆接触,并且与反射电极(130)隔绝。举例来说,电流扩展层(133)可以通过下部绝缘层(131)与反射电极(130)隔绝。下部绝缘层(131)置于反射电极(130)与电流扩展层(133)之间以将电流扩展层(133)与反射电极(130)隔绝。
此外,下部绝缘层(131)可以具有开口(131b),所述开口置于反射电极(130)的上部区域内,使得通过其使反射电极(130)暴露;以及开口(131a),所述开口通过其使第一导电型半导体层(123)暴露。下部绝缘层(131)的开口(131b)具有比电流扩展层(133)的开口(133a)小的面积,并且通过开口(133a)被完全地暴露。
另一方面,电流扩展层(133)可以通过开口(131a)连接到第一导电型半导体层(123)。此处,如参考图21所描述,开口(131a)可以沿着衬底(121)的边缘放置并且与钝角部分相比,在锐角部分可以彼此分隔得更远。在此结构下,发光二极管可以防止电流集聚在锐角部分,由此提高了发光效率。此外,如参考图25所描述,下部绝缘层(131)可以包含孔洞(131c)代替开口(131a)。
上部绝缘层(135)覆盖电流扩展层(133)的至少一部分。此外,上部绝缘层(135)具有使电流扩展层(133)暴露的开口(135a)和使反射电极(130)暴露的开口(135b)。开口(135a)和开口(135b)可以靠近锐角部分彼此面对面放置。此外,上部绝缘层(135)可以覆盖电流扩展层(133)的开口(133a)的侧壁,并且开口(135b)可以置于开口(133a)内。
第一衬垫(137a)可以置于电流扩展层(133)上并且例如可以通过上部绝缘层(135)的开口(135a)连接到电流扩展层(133)。第一衬垫(137a)通过电流扩展层(133)电连接到第一导电型半导体层(123)。此外,第二衬垫(137b)连接到通过开口(135b)暴露的反射电极(130)并通过反射电极(130)电连接到第二导电型半导体层(127)。
根据此实施例,衬底(121)具有包含至少一个锐角的多边形形状,例如平行四边形形状或三角形形状,由此提高了光提取效率。此外,通过锐角部分的光通量增加,从而可以使用锐角部分调整发光二极管的光束角。
此外,根据此实施例,衬底(121)具有100微米或超过100微米的厚度,由此提高了光束角。
此外,电流扩展层(123)包含例如Al层等反射金属层,或下部绝缘层作为绝缘反射层而形成,从而未被反射电极(130)反射的光可以被电流扩展层(123)或下部绝缘层(131)反射,由此提高了光提取效率。
图27是根据本发明的又一个实施例的发光二极管(200a)的截面图。
除了保形涂层(150)置于衬底(121)上外,根据此实施例的发光二极管(200a)大体上类似于图26的发光二极管(100a)。保形涂层(150)均匀地覆盖衬底(121)的第二表面(121b)并且也可以覆盖侧表面(121c)。保形涂层(150)可以含有例如磷光体等波长转换材料。
此外,衬底(121)的厚度与保形涂层(150)的厚度的总和可以是225微米到600微米。举例来说,保形涂层(150)可以具有20微米到200微米的厚度。此外,衬底(121)的厚度可以视保形涂层的厚度而变化,例如可以在100微米到400微米范围内。当衬底(121)的厚度与保形涂层(150)的厚度的总和大于或等于225微米时,发光二极管(200a)的光束角可以增加到140°或超过140°。
图28展示说明视衬底形状而定的光提取特征的示意平面图。此处,(a)展示在具有矩形形状的典型衬底(111)中光的行进通道,并且(b)展示在根据本发明的一个实施例,具有包含锐角的菱形形状的衬底(121)中光的行进通道。
参看图28(a),在作用层中特定位置(Lp)产生的一些光进入衬底(111)并且在衬底(111)的内侧表面上重复全反射。结果,光在衬底(111)内行进很大距离,由此引起光在衬底(111)内损失。因为衬底(111)的厚度增加,所以光在衬底(111)的侧表面上的全反射变得更严重,由此增加了光损失。此外,因为从衬底(111)的部分发射的光具有类似的特征,所以根据方向的光束角不存在很大差异。
相反,在具有如图28(b)中所示的菱形形状的衬底(121)中,在作用层中特定位置(Lp)产生的一些光进入衬底(121),被衬底(121)的内侧表面全部反射,并随后靠近锐角部分,以减小入射角的光放到外部。因此,相比于典型衬底(111),具有菱形形状的衬底(121)提供了提高的光提取效率。此外,因为光提取效率在锐角部分增加,所以相比于钝角部分,在锐角部分光束角增加。因此,可以提供视方向而定具有不同光束角的发光二极管。
图29是描绘通过典型方法构造的倒装芯片型发光二极管和通过根据本发明的一个实施例的方法构造的倒装芯片型发光二极管的光束角的图。在通过典型方法构造的发光二极管中,衬底(111)具有300微米×1000微米的矩形形状和约250微米的厚度。在通过根据实施例的方法构造的倒装芯片型发光二极管中,衬底(121)的锐角部分之间的距离是1毫米并且其钝角部分之间的距离是约0.58毫米。
参看图29,对于典型发光二极管,在x轴(短轴)方向上的光束角分布(R-X)大体上类似于在y轴(长轴)方向上的光束角分布(R-Y)。相反,对于根据本发明的实施例的发光二极管,在x轴方向上穿过锐角部分的光束角分布(D-X)超过在y轴方向上穿过钝角部分的光束角分布(D-Y)。
因此,根据本发明的实施例,可以提供一种根据x轴方向和y轴方向显示不同光束角特征的发光二极管。此类发光二极管可以有利地用于例如LED荧光灯等视方向而定,需要不同光束角特征的照明设备中。举例来说,多个发光二极管可以线性配置以垂直于具有宽光束角的LED荧光灯的纵向方向,由此实现大面积的照射,同时减少荧光灯内的光损失。
虽然上文已经描述了本发明的各种实施例和特征,但应了解本发明并不限于此。此外,某一实施例的个别结构、元件或特征不限于所述某一实施例并可以在不脱离本发明的精神和范围下施加至其它实施例。
Claims (50)
1.一种发光二极管,包括:
透明衬底,具有第一表面、第二表面和将所述第一表面与所述第二表面连接的侧表面;
第一导电型半导体层,置于所述透明衬底的所述第一表面上;
第二导电型半导体层,置于所述第一导电型半导体层上;
作用层,置于所述第一导电型半导体层与所述第二导电型半导体层之间;
第一衬垫,电连接到所述第一导电型半导体层;以及
第二衬垫,电连接到所述第二导电型半导体层,
其中在所述作用层中产生的光经由所述透明衬底的所述第二表面穿过所述透明衬底放出,并且所述发光二极管在其至少一个轴向方向上具有140°或超过140°的光束角。
2.根据权利要求1所述的发光二极管,还包括:
保形涂层,覆盖所述透明衬底的所述第二表面,
其中穿过所述第二表面发射的光穿过所述保形涂层放出。
3.根据权利要求2所述的发光二极管,其中所述透明衬底与所述保形涂层的总厚度在225微米到600微米范围内。
4.根据权利要求3所述的发光二极管,其中所述透明衬底具有150微米到400微米的厚度。
5.根据权利要求3所述的发光二极管,其中所述保形涂层具有20微米到200微米的厚度。
6.根据权利要求1所述的发光二极管,其中所述透明衬底具有225微米到400微米的厚度。
7.根据权利要求1至6中任一项所述的发光二极管,还包括:
在所述第一导电型半导体层上彼此分隔开的多个凸台,每一所述凸台包括所述作用层和所述第二导电型半导体层。
8.根据权利要求7所述的发光二极管,还包括:
反射电极,分别置于所述多个凸台上并与所述第二导电型半导体层形成欧姆接触;以及
电流扩展层,覆盖所述多个凸台和所述第一导电型半导体层并具有分别置于所述多个凸台的上部区域中同时使所述反射电极暴露的开口,所述电流扩展层与所述第一导电型半导体层形成欧姆接触并与所述多个凸台隔绝,
其中通过所述开口,所述第一衬垫电连接到所述电流扩展层并且所述第二衬垫电连接到所述反射电极。
9.根据权利要求8所述的发光二极管,其中所述多个凸台具有在一个方向上延伸的细长形状并彼此平行安置。
10.根据权利要求8所述的发光二极管,其中所述电流扩展层包括反射金属。
11.根据权利要求8所述的发光二极管,其中每一所述反射电极包括反射金属层和阻挡金属层,所述阻挡金属层覆盖所述反射金属层的上表面和侧表面。
12.根据权利要求8所述的发光二极管,还包括:
上部绝缘层,覆盖所述电流扩展层的至少一部分并包含使所述反射电极暴露的开口,
其中所述第二衬垫电连接到通过所述上部绝缘层的开口暴露的所述反射电极。
13.根据权利要求8所述的发光二极管,还包括:
下部绝缘层,置于所述多个凸台与所述电流扩展层之间并且将所述电流扩展层与所述多个凸台隔绝,
其中所述下部绝缘层包括分别置于所述凸台的上部区域中并使所述反射电极暴露的开口。
14.根据权利要求13所述的发光二极管,其中所述电流扩展层的每一开口具有比所述下部绝缘层的开口大的宽度,从而允许所述下部绝缘层的对应开口通过其被完全地暴露。
15.根据权利要求14所述的发光二极管,还包括:
上部绝缘层,覆盖所述电流扩展层的至少一部分并包含使所述反射电极暴露的开口,
所述上部绝缘层覆盖所述电流扩展层的开口的侧壁。
16.根据权利要求13所述的发光二极管,其中所述下部绝缘层为反射介电层。
17.根据权利要求1所述的发光二极管,其中所述侧表面倾斜,使得所述第一表面的面积大于所述第二表面的面积。
18.一种发光二极管,包括:
透明衬底,具有第一表面、第二表面和将所述第一表面与所述第二表面连接的侧表面;
第一导电型半导体层,置于所述透明衬底的所述第一表面上;
第二导电型半导体层,置于所述第一导电型半导体层上;
作用层,置于所述第一导电型半导体层与所述第二导电型半导体层之间;
第一衬垫,电连接到所述第一导电型半导体层;以及
第二衬垫,电连接到所述第二导电型半导体层,
其中在所述作用层中产生的光穿过所述透明衬底的所述第二表面放出,并且所述透明衬底具有225微米到400微米的厚度。
19.一种发光二极管,包括:
透明衬底,具有第一表面、第二表面和将所述第一表面与所述第二表面连接的侧表面;
第一导电型半导体层,置于所述透明衬底的所述第一表面上;
第二导电型半导体层,置于所述第一导电型半导体层上;
作用层,置于所述第一导电型半导体层与所述第二导电型半导体层之间;
第一衬垫,电连接到所述第一导电型半导体层;
第二衬垫,电连接到所述第二导电型半导体层;以及
保形涂层,覆盖所述透明衬底,
其中在所述作用层中产生的光穿过所述保形涂层放出,并且所述透明衬底与所述保形涂层的总厚度在225微米到600微米范围内。
20.根据权利要求19所述的发光二极管,其中所述透明衬底具有150微米到400微米的厚度。
21.一种照明模块,包含多个发光二极管,至少一个所述发光二极管包括:
透明衬底,具有第一表面、第二表面和将所述第一表面与所述第二表面连接的侧表面;
第一导电型半导体层,置于所述透明衬底的所述第一表面上;
第二导电型半导体层,置于所述第一导电型半导体层上;
作用层,置于所述第一导电型半导体层与所述第二导电型半导体层之间;
第一衬垫,电连接到所述第一导电型半导体层;以及
第二衬垫,电连接到所述第二导电型半导体层,
其中在所述作用层中产生的光经由所述透明衬底的所述第二表面穿过所述透明衬底放出,并且至少一个所述发光二极管在其至少一个轴向方向上具有140°或超过140°的光束角。
22.根据权利要求21所述的照明模块,其中所述透明衬底具有225微米到400微米的厚度。
23.根据权利要求21所述的照明模块,其中至少一个所述发光二极管还包括覆盖所述透明衬底的所述第二表面的保形涂层,并且所述透明衬底与所述保形涂层的总厚度在225微米到600微米范围内。
24.一种照明设备,包括根据权利要求21到23中任一项所述的照明模块。
25.一种背光单元,包括多个发光二极管,至少一个所述发光二极管包括:
透明衬底,具有第一表面、第二表面和将所述第一表面与所述第二表面连接的侧表面;
第一导电型半导体层,置于所述透明衬底的所述第一表面上;
第二导电型半导体层,置于所述第一导电型半导体层上;
作用层,置于所述第一导电型半导体层与所述第二导电型半导体层之间;
第一衬垫,电连接到所述第一导电型半导体层;以及
第二衬垫,电连接到所述第二导电型半导体层,
其中在所述作用层中产生的光经由所述透明衬底的所述第二表面穿过所述透明衬底放出,并且至少一个所述发光二极管在其至少一个轴向方向上具有140°或超过140°的光束角。
26.根据权利要求25所述的背光单元,其中所述透明衬底具有225微米到400微米的厚度。
27.根据权利要求25所述的背光单元,其中至少一个所述发光二极管包括覆盖所述透明衬底的所述第二表面的保形涂层,并且所述透明衬底与所述保形涂层的总厚度在225微米到600微米范围内。
28.根据权利要求27所述的背光单元,其中所述保形涂层具有20微米到200微米的厚度。
29.一种发光二极管,包括:
透明衬底,具有第一表面、第二表面和将所述第一表面与所述第二表面连接的侧表面;
第一导电型半导体层,置于所述透明衬底的所述第一表面上;
第二导电型半导体层,置于所述第一导电型半导体层上;
作用层,置于所述第一导电型半导体层与所述第二导电型半导体层之间;
第一衬垫,电连接到所述第一导电型半导体层;以及
第二衬垫,电连接到所述第二导电型半导体层,
其中在所述作用层中产生的光经由所述透明衬底的所述第二表面穿过所述透明衬底放出,并且所述透明衬底具有至少一个锐角。
30.根据权利要求29所述的发光二极管,其中所述透明衬底具有100微米到400微米的厚度。
31.根据权利要求30所述的发光二极管,其中包含至少一个锐角的多边形形状是三角形形状、平行四边形形状或五边形形状。
32.根据权利要求29所述的发光二极管,其中所述透明衬底为蓝宝石衬底。
33.根据权利要求32所述的发光二极管,其中所述透明衬底具有平行四边形形状并且所述透明衬底的侧表面由一组m型平面构成。
34.根据权利要求29所述的发光二极管,还包括:
反射电极,置于所述第二导电型半导体层上并反射在所述作用层中产生的光。
35.根据权利要求29到34中任一项所述的发光二极管,其中所述作用层和所述第二导电型半导体层限制性地置于所述第一导电型半导体层的上部区域内,使得所述第一导电型半导体层的上表面沿着所述衬底的边缘暴露。
36.根据权利要求35所述的发光二极管,还包括:
电流扩展层,将所述第一衬垫连接到所述第一导电型半导体层,
其中所述第一衬垫和所述第二衬垫置于所述第二导电型半导体层上面。
37.根据权利要求36所述的发光二极管,其中所述电流扩展层包括反射金属。
38.根据权利要求36所述的发光二极管,还包括:
下部绝缘层,将所述电流扩展层与所述反射电极隔绝,所述下部绝缘层包括使所述第一导电型半导体层暴露的开口,
其中所述电流扩展层通过所述下部绝缘层的开口连接到所述第一导电型半导体层。
39.根据权利要求38所述的发光二极管,其中所述开口分别沿着所述衬底的边缘呈细长形状安置,并且与其它角部分相比,在所述至少一个锐角部分彼此分隔开得更远。
40.根据权利要求38所述的发光二极管,其中所述开口包括沿着所述衬底的边缘彼此分隔开的多个孔洞,并且所述孔洞之间的距离随着所述孔洞接近所述至少一个锐角部分而增加。
41.根据权利要求29所述的发光二极管,其中所述侧表面倾斜,使得所述第一表面的面积大于所述第二表面的面积。
42.根据权利要求29所述的发光二极管,还包括:
保形涂层,覆盖所述衬底的所述第二表面。
43.根据权利要求42所述的发光二极管,其中所述透明衬底与所述保形涂层的总厚度在225微米到600微米范围内。
44.一种照明设备,包括多个发光二极管,至少一个所述发光二极管包括:
透明衬底,具有第一表面、第二表面和将所述第一表面与所述第二表面连接的侧表面;
第一导电型半导体层,置于所述透明衬底的所述第一表面上;
第二导电型半导体层,置于所述第一导电型半导体层上;
作用层,置于所述第一导电型半导体层与所述第二导电型半导体层之间;
第一衬垫,电连接到所述第一导电型半导体层;以及
第二衬垫,电连接到所述第二导电型半导体层,
其中在所述作用层中产生的光经由所述透明衬底的所述第二表面穿过所述透明衬底放出,并且所述透明衬底具有包含至少一个锐角的多边形形状。
45.根据权利要求44所述的照明设备,其中所述透明衬底具有100微米到400微米的厚度。
46.根据权利要求44所述的照明设备,其中包含至少一个锐角的所述多边形形状是三角形形状、平行四边形形状或五边形形状。
47.根据权利要求46所述的照明设备,其中所述透明衬底具有平行四边形形状并且所述透明衬底的侧表面由一组m型平面构成。
48.根据权利要求47所述的照明设备,其中至少一个所述发光二极管还包括覆盖所述透明衬底的所述第二表面的保形涂层,并且所述透明衬底与所述保形涂层的总厚度在225微米到600微米范围内。
49.一种发光二极管,包括:
第一导电型半导体层,置于具有第一表面和与所述第一表面相对的第二表面的衬底的所述第一表面上;
凸台,包含依序堆叠在所述第一导电型半导体层上的作用层和第二导电型半导体层,所述凸台在平面图中具有包含锐角和钝角的多边形形状并且使所述第一导电型半导体层暴露于其外部;
下部绝缘层,覆盖所述凸台并包含与所述凸台的外侧相邻放置并使所述第一导电型半导体层暴露的多个第一开口和使所述第二导电型半导体层的上表面暴露的第二开口;
第一衬垫,通过所述第一开口电连接到所述第一导电型半导体层;
第二衬垫,通过所述第二开口电连接到所述第二导电型半导体层;
其中靠近所述凸台的所述锐角放置的所述第一开口之间的距离大于靠近所述凸台的所述钝角放置的所述第一开口之间的距离。
50.根据权利要求49所述的发光二极管,其中靠近所述凸台的所述锐角放置的所述第一开口之间的距离大于或等于电流扩展长度,并且靠近所述钝角放置的所述第一开口之间的距离小于或等于所述电流扩展长度。
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DE112013005849T5 (de) | 2015-08-20 |
CN110600593B (zh) | 2023-01-03 |
US20150287888A1 (en) | 2015-10-08 |
CN109979925B (zh) | 2024-03-01 |
US20170200864A1 (en) | 2017-07-13 |
CN109979925A (zh) | 2019-07-05 |
DE202013012758U1 (de) | 2019-04-29 |
US20150270442A1 (en) | 2015-09-24 |
CN105074941B (zh) | 2019-10-08 |
US9548425B2 (en) | 2017-01-17 |
US10749080B2 (en) | 2020-08-18 |
US20200098949A1 (en) | 2020-03-26 |
CN110600593A (zh) | 2019-12-20 |
WO2014088201A1 (ko) | 2014-06-12 |
US10497836B2 (en) | 2019-12-03 |
US9608171B2 (en) | 2017-03-28 |
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