WO2014034473A1 - 導電性マイエナイト型化合物粉末の製造方法 - Google Patents
導電性マイエナイト型化合物粉末の製造方法 Download PDFInfo
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- WO2014034473A1 WO2014034473A1 PCT/JP2013/072163 JP2013072163W WO2014034473A1 WO 2014034473 A1 WO2014034473 A1 WO 2014034473A1 JP 2013072163 W JP2013072163 W JP 2013072163W WO 2014034473 A1 WO2014034473 A1 WO 2014034473A1
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 138
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- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 21
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- 239000000203 mixture Substances 0.000 claims abstract description 12
- 238000002156 mixing Methods 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001868 water Inorganic materials 0.000 claims abstract description 6
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 73
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 51
- 229910021529 ammonia Inorganic materials 0.000 claims description 24
- 238000003786 synthesis reaction Methods 0.000 claims description 21
- 239000002994 raw material Substances 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 19
- 229910052723 transition metal Inorganic materials 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 150000003624 transition metals Chemical class 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 238000012423 maintenance Methods 0.000 claims description 7
- 238000005470 impregnation Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims 1
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- 238000010248 power generation Methods 0.000 abstract description 2
- 239000007858 starting material Substances 0.000 abstract description 2
- 239000011575 calcium Substances 0.000 description 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 13
- -1 oxygen ions Chemical class 0.000 description 13
- 150000003623 transition metal compounds Chemical class 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 238000005245 sintering Methods 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000000292 calcium oxide Substances 0.000 description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000012776 electronic material Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000001027 hydrothermal synthesis Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 238000001308 synthesis method Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- RTZYCRSRNSTRGC-LNTINUHCSA-K (z)-4-oxopent-2-en-2-olate;ruthenium(3+) Chemical compound [Ru+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O RTZYCRSRNSTRGC-LNTINUHCSA-K 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 239000012018 catalyst precursor Substances 0.000 description 2
- 239000007809 chemical reaction catalyst Substances 0.000 description 2
- JUPWRUDTZGBNEX-UHFFFAOYSA-N cobalt;pentane-2,4-dione Chemical compound [Co].CC(=O)CC(C)=O.CC(=O)CC(C)=O.CC(=O)CC(C)=O JUPWRUDTZGBNEX-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000002706 hydrostatic effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- AQBLLJNPHDIAPN-LNTINUHCSA-K iron(3+);(z)-4-oxopent-2-en-2-olate Chemical compound [Fe+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O AQBLLJNPHDIAPN-LNTINUHCSA-K 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000004435 EPR spectroscopy Methods 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010669 acid-base reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 235000012215 calcium aluminium silicate Nutrition 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 229910000099 calcium monohydride Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- VUBLMKVEIPBYME-UHFFFAOYSA-N carbon monoxide;osmium Chemical group [Os].[Os].[Os].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] VUBLMKVEIPBYME-UHFFFAOYSA-N 0.000 description 1
- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical group [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 1
- BKFAZDGHFACXKY-UHFFFAOYSA-N cobalt(II) bis(acetylacetonate) Chemical compound [Co+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O BKFAZDGHFACXKY-UHFFFAOYSA-N 0.000 description 1
- FJDJVBXSSLDNJB-LNTINUHCSA-N cobalt;(z)-4-hydroxypent-3-en-2-one Chemical compound [Co].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O FJDJVBXSSLDNJB-LNTINUHCSA-N 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910001849 group 12 element Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000002638 heterogeneous catalyst Substances 0.000 description 1
- 239000002815 homogeneous catalyst Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- BQZGVMWPHXIKEQ-UHFFFAOYSA-L iron(ii) iodide Chemical compound [Fe+2].[I-].[I-] BQZGVMWPHXIKEQ-UHFFFAOYSA-L 0.000 description 1
- 238000006317 isomerization reaction Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000001028 reflection method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- YAYGSLOSTXKUBW-UHFFFAOYSA-N ruthenium(2+) Chemical compound [Ru+2] YAYGSLOSTXKUBW-UHFFFAOYSA-N 0.000 description 1
- OIWNHEPSSHYXTG-UHFFFAOYSA-L ruthenium(2+);triphenylphosphane;dichloride Chemical compound Cl[Ru]Cl.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 OIWNHEPSSHYXTG-UHFFFAOYSA-L 0.000 description 1
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 1
- FZHCFNGSGGGXEH-UHFFFAOYSA-N ruthenocene Chemical compound [Ru+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 FZHCFNGSGGGXEH-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000004230 steam cracking Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
- B01J21/16—Clays or other mineral silicates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
- C01F7/16—Preparation of alkaline-earth metal aluminates or magnesium aluminates; Aluminium oxide or hydroxide therefrom
- C01F7/164—Calcium aluminates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/02—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the alkali- or alkaline earth metals or beryllium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/40—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals of the platinum group metals
- B01J23/46—Ruthenium, rhodium, osmium or iridium
- B01J23/462—Ruthenium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/54—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
- B01J23/56—Platinum group metals
- B01J23/58—Platinum group metals with alkali- or alkaline earth metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/19—Catalysts containing parts with different compositions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/33—Electric or magnetic properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/60—Catalysts, in general, characterised by their form or physical properties characterised by their surface properties or porosity
- B01J35/61—Surface area
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Definitions
- the present invention relates to a method for producing a conductive mayenite compound powder having a large specific surface area that is useful for electronic materials and catalyst materials having electrical conductivity.
- the mayenite type compound has a representative composition of 12CaO ⁇ 7Al 2 O 3 (hereinafter referred to as “C12A7”), and the C12A7 crystal has two of 66 oxygen ions in a unit cell containing two molecules. It has been reported that it has a unique crystal structure in which it is included as “free oxygen” in the space in the cage formed by the crystal skeleton (Non-patent Document 1).
- C12A7 obtained by substituting free oxygen ions with electrons can be expressed by a chemical formula [Ca 24 Al 28 O 64 ] 4+ (e ⁇ ) 4 (hereinafter, “C12A7: e ⁇ ”).
- C12A7: e ⁇ a substance in which electrons are replaced with anions as described above is referred to as “electride”, and electride has a characteristic of exhibiting good electron conduction characteristics (Non-patent Document 2).
- the inventors of the present invention have (i) a method in which a C12A7 single crystal or fine powder hydrostatic press-molded body is maintained at 600 to 800 ° C. in an alkali metal or alkaline earth metal vapor, and (b) a thin film of C12A7.
- Patent Document 2 Reduction of carbon, Al, Ti, etc. into a powder obtained by pulverizing a sintered product that has been held and sintered by a solid phase reaction, a press-molded product of the powder, or a sintered product obtained by sintering the molded product at 1200 to 1350 ° C.
- Patent Documents 3 and 4 A patent application was filed for an invention (Patent Documents 3 and 4) relating to a method of adding conductivity and heat-treating at 600 to 1415 ° C. to impart conductivity (that is, substitution of free oxygen ions and electrons).
- a method of reducing a physical film by heating to 700 to 1500 ° C. Patent Document 6
- Patent Document 7 a method of sintering a mixture of a reducing agent such as metal Al or metal Ca and a raw material at 1200 to 1415 ° C.
- Patent Document 8 mayenite type A method in which the compound powder is heated to 300 to 1200 ° C. to form a sintered body having open pores, and the obtained sintered body is heated to 1200 to 1450 ° C. in a reducing atmosphere (patent text) 9) invention relates to such is patent.
- Non-patent Document 3 The conductive mayenite type compound is used for an electron emitter, a field emission display device, a cold cathode fluorescent tube, a flat illumination device, an electron emission material (Patent Document 10), a discharge lamp electrode (Patent Document 11), and the like.
- C12A7 is also used as a catalyst or catalyst support even if it has no conductivity.
- C12A7 is a catalyst obtained by spray-drying a starting complex solution at 1300 to 1400 ° C. for 2 hours or more. It is known to be used as a steam cracking reaction catalyst for producing a soft olefin (Patent Document 15).
- Non-Patent Documents 4 and 5 a method of obtaining a carrier having a high specific surface area by a method in which a precursor is synthesized by a hydrothermal method or a sol-gel method and then calcined has been proposed.
- Non-patent Document 6 It has been reported that when C12A7 is left in an atmosphere containing moisture, hydroxyl ions (OH ⁇ ) are included in the cage and are not easily detached even at high temperatures (Non-patent Document 6).
- the conductive mayenite type compound is expected to be applied to cold electron emitters, conductors, organic EL electron injection electrodes, thermoelectric conversion materials, thermoelectric power generation materials, reducing agents, oxidizing agents, catalysts, and the like.
- a raw material mixed with a reducing agent is fired at a high temperature of 1200 ° C. or more and simultaneously reduced (Patent Document 8).
- a reduction process for a mayenite type compound synthesized by baking at a high temperature of 1200 ° C. or higher (Patent Document 8), etc., requires a high-temperature synthesis step.
- the present inventors have found a method for producing a conductive mayenite type compound powder having a large specific surface area, and have completed the present invention.
- an electron injection operation by a reduction treatment at a high temperature of 1200 ° C. or higher is necessary for the mayenite type compound, and even if a raw material powder having a large specific surface area is used, Although a powder having a large specific surface area could not be obtained, the present inventors found a means capable of performing electron injection operation at a low temperature of 1100 ° C. or lower, and a conductive mayenite type compound powder having a specific surface area of 5 m 2 g ⁇ 1 or more. Realized manufacturing.
- the present invention includes (1) a process of hydrothermally treating a mixture of raw material powder of mayenite type compound and water to form a precursor powder of mayenite type compound, (2) a step of heating and dehydrating the precursor powder to form a mayenite type compound powder; (3) forming the activated mayenite type compound powder by heating the mayenite type compound powder in an inert gas atmosphere or in a vacuum at a temperature range of 400 to 1100 ° C.
- a conductive mayenite type compound powder having a conduction electron concentration of 10 15 cm -3 or more and a specific surface area of 5 m 2 g -1 or more.
- the present invention provides the above-described production method, wherein after the step (4), further, (5) a temperature rising rate of 30 to 60 ° C. min ⁇ 1 and 900 to 1100 by a rapid temperature rising heating method (RTA method).
- RTA method rapid temperature rising heating method
- the mayenite type compound is typically 12CaO ⁇ 7Al 2 O 3 .
- the reducing agent is preferably Ca or CaH 2 .
- the conductive mayenite type compound powder having a specific surface area of 5 m 2 g ⁇ 1 or more is as follows. First, by using a hydrothermal synthesis method as a first point, a raw material of a mayenite type compound, for example, in the case of C12A7, a Ca source and an Al source are uniformly mixed well, and a hydrated oxide that becomes a crystal source at a low temperature Can be formed as a precursor. By heating and dehydrating the precursor, a mayenite compound can be obtained at a lower temperature than solid phase synthesis. As a result, the obtained mayenite compound has fine specific surface area because it is a fine particle of sub-micro order.
- the reducing agent does not function and injection of electrons is difficult.
- the mayenite compound powder having such a large specific surface area is evacuated at 800 to 1000 ° C., adsorbed water, surface hydroxyl groups, OH ⁇ in the cage and the like can be sufficiently removed, and thus the reducing agent can be used without deactivation.
- a conductive mayenite compound powder can be obtained by reduction treatment at a low temperature (700 to 800 ° C.).
- RTA method a rapid thermal heating method
- RTA method a rapid thermal heating method
- rapid increase in temperature can be achieved. Since the temperature can be reduced, the reduction treatment can be completed before the particles are sintered and agglomerated, so that the conductive mayenite compound having a high specific surface area can be obtained even by heat reduction at a relatively high temperature (900 to 1100 ° C.). can get.
- the present invention provides a supported metal catalyst obtained by supporting a conductive mayenite type compound powder produced by the above method by impregnation method, physical mixing method, thermal decomposition method, liquid phase method, sputtering method or vapor deposition method. It is a method of manufacturing.
- the supported metal component is not particularly limited, but Li, Na, K, Rb, or Cs selected from Group 1A elements, Mg, Ca, Sr, or Ba selected from Group 2A elements, Sc, Y selected from Group 3A elements Ti, Zr, or Hf selected from Group 4A elements, V, Nb, or Ta, Group 6A elements Cr, Mo or W, Group 7A elements Mn, Tc, or Re , Group 8 transition metal Fe, Ru, or Os, Group 9 element Co, Rh, or Ir, Group 10 element Ni, Pd, or Pt, Group 11 element Cu, Ag, or Au, Group 12 element Zn, Cd, or Hg, Group 13 element B, Al, Ga, In, or Tl, Si, Ge, Sn, or Pb, Group 15 element selected from Group 14 element It can be used et chosen As, Sb, or Se selected from Bi, 16 group elements, or any of Te. Alternatively, these components can be combined.
- the catalyst of the present invention can be used for various catalytic reactions such as oxidation, hydrogenation, isomerization, disproportionation, esterification, condensation reaction, acid-base reaction, or polymerization reaction, but is not limited thereto. Absent.
- transition metal elements are used in various synthetic reactions as homogeneous and heterogeneous catalysts, and in particular, Group 6, 8 or 9 transition metals such as Fe, Ru, Os, Co, Rh, and Mo. Is suitable as a catalyst for synthesizing ammonia by a direct reaction between hydrogen and nitrogen.
- Mo, W, Re, Fe, Co, Ru, Rh, and Os are known as transition metals having ammonia synthesis activity, and these components were modified with an electron injection material such as alkali metal or alkaline earth metal.
- a catalyst, a combination of the aforementioned elements, a group 8 or group 6B transition metal nitride, or a Co / Mo composite nitride can be used as the catalyst.
- the mayenite type compound powder or porous material containing the conductive electrons obtained in the above step of 1 ⁇ 10 15 cm ⁇ 3 or more, a transition metal compound and an impregnation method or physical It is obtained by heating after mixing by a mixing method and reductively decomposing the transition metal compound into a transition metal.
- a transition metal compound may be deposited on the surface by CVD, sputtering, or the like, and the transition metal compound may be thermally decomposed to deposit a transition metal.
- the transition metal compound is not particularly limited.
- the following process can be adopted as the impregnation method.
- carbon powder is dispersed in a transition metal compound solution (for example, a hexane solution of Ru carbonyl complex) and stirred.
- the transition metal compound is about 0.01 to 40 wt%, preferably 0.02 to 30 wt%, more preferably about 0.05 to 20 wt% with respect to the carrier powder.
- the solvent is evaporated to dryness by heating for 30 minutes to 5 hours in an inert gas stream such as nitrogen, argon or helium or under vacuum at 50 to 200 ° C.
- the catalyst precursor comprising the dried transition metal compound is reduced.
- the amount of the transition metal is 0.01 to 30 wt%, preferably 0.02 to 20 wt%, more preferably 0.05 to 10 wt% with respect to the carrier powder.
- the carrier powder on which the transition metal is supported includes the same amount of electrons as the original after the supporting step, and has a low work function as a carrier, so that it has a large ability to donate electrons to the transition metal, and nitrogen and nitrogen on the transition metal. As a result of significantly promoting the activation of hydrogen, it functions as a high-performance ammonia synthesis catalyst.
- the catalyst of the present invention is a high-performance ammonia synthesis catalyst without using alkali metal or alkaline earth metal and their compounds as promoter compounds, but these promoter compounds may be used as necessary. .
- the supported metal catalyst can be used as a molded body using a normal molding technique. Specific examples include granular, spherical, tablet, ring, macaroni, four-leaf, dice, and honeycomb shapes. It can also be used after coating on a suitable support.
- the present invention also provides an ammonia synthesis method for use in a synthesis reaction in which ammonia gas (NH 3 ) is produced by reacting a supported metal catalyst produced by the above method with nitrogen gas (N 2 ) and hydrogen gas (H 2 ). It is.
- ammonia gas NH 3
- N 2 nitrogen gas
- H 2 hydrogen gas
- a conductive mayenite type compound powder having a large specific surface area and useful as an electronic material part such as a PDP protective film material or an electrode material requiring high-temperature heat treatment, or a catalyst material is conventionally reduced. It can be provided by an electron injection method using an agent.
- the crystal of the mayenite type compound is constituted by a cage structure (cage) having an inner diameter of about 0.4 nm sharing its wall surface and three-dimensionally connecting.
- an anion such as O 2 ⁇ is contained in the inside of the cage of the mayenite type compound, and these can be replaced with conduction electrons by chemical treatment. Increasing the annealing time increases the conduction electron concentration in the mayenite type compound.
- the mayenite type compound In the mayenite type compound, electrons substituted for oxide ions (O 2 ⁇ ) included in the structure become conduction electrons, and in the case of C12A7, the composition formula ([Ca 24 Al 28 O 64 ] 4+ (O 2 ⁇ ) 2 ⁇ x (e ⁇ ) 2x ) (0 ⁇ x ⁇ 2). Further, by replacing oxide ions with electrons, the conduction electron concentration becomes 1 ⁇ 10 15 cm ⁇ 3 or more. Therefore, the mayenite type compound containing conduction electrons can be referred to as a “conductive mayenite type compound”. In the case of C12A7: e ⁇ , the theoretical maximum concentration of conduction electrons is 2.3 ⁇ 10 21 cm ⁇ 3 . By the above method, a mayenite type compound having a conduction electron concentration equal to the theoretical value can be obtained. it can.
- the conductive mayenite type compound absorbs light at 2.8 eV and 0.4 eV.
- the electron density can be obtained by measuring this light absorption coefficient.
- the electron density in the cage can be measured using electron spin resonance (ESR).
- ESR electron spin resonance
- the mayenite type compound containing conduction electrons reduces iodine by dissolving in a solution containing iodine. Using this action, the electron density in the cage can be measured by redox titration.
- the specific surface area is a value measured by an adsorption isotherm of nitrogen molecules at a liquid nitrogen temperature ( ⁇ 196 ° C.).
- Equilibrium pressure of adsorption isotherm P / P 0 ; P is the partial pressure (Pa) of the adsorbed gas in equilibrium with the sample surface at ⁇ 196 ° C., P 0 is the vapor pressure (Pa) of the adsorbed gas) 0.05 to
- the specific surface area of the synthesized conductive mayenite type compound was estimated by applying the BET (Brunauer, Emmett and Teller) formula in the range of 0.3.
- the mayenite type compound used as the starting material of the target compound is more preferably a fine powder (primary particle size of 100 nm or less) or a bulk porous body having a pore structure.
- the surface area per gram is increased, and the gap between the particles is also in the mesopore region (2 nm to 100 nm or less).
- the hydroxide which becomes the precursor of the mayenite type compound can be obtained by a hydrothermal treatment method.
- a precursor compound can be obtained by placing a solvent such as water or alcohol and a raw material in a pressure vessel and heating at a temperature not lower than the boiling point of the solvent for several hours to several days.
- Ca 3 Al 2 (OH) 12 which is a hydroxide used as a precursor of the mayenite type compound C12A7, is a mixture of water, calcium hydroxide, and aluminum hydroxide in a stoichiometric composition and heated at, for example, 150 ° C. for about 6 hours. You can get it. By heating and dehydrating the obtained precursor at about 400 to 1000 ° C. in the atmosphere, a mayenite type compound powder C12A7 having a large specific surface area (about 20 to 60 m 2 g ⁇ 1 ) can be obtained.
- the high specific surface area mayenite-type compound powder synthesized via hydrothermal treatment has a hydroxyl group that is firmly bonded to the surface or cage skeleton, and the reducing agent reacts with the hydroxyl group (2CaH 2 ) in the process of containing conduction electrons. + 2OH ⁇ 2CaO + 3H 2 ), it is necessary to activate the surface of the powder or the inside of the cage skeleton by eliminating the hydroxyl groups as much as possible in the pretreatment step of the electron injection step.
- the specific surface area after treatment is reduced with increasing pretreatment temperature, in a temperature range of 400 ⁇ 1000 ° C.
- the specific surface area is, for example, changes from 60 m 2 g -1 to 6 m 2 g -1.
- a pretreatment method it is better to heat at a temperature of 400 to 1100 ° C. in an inert gas atmosphere or in a vacuum.
- the heating temperature is preferably 700 to 1000 ° C., more preferably 800 to 900 ° C.
- a powder having a high specific surface area can be obtained.
- the reducing agent is consumed by the hydroxyl group held in the powder in the reduction treatment step, a high conduction electron concentration cannot be obtained.
- a temperature exceeding 1100 ° C. a high conduction electron concentration can be obtained, but since powder sintering proceeds, a high specific surface area mayenite type compound powder cannot be obtained.
- the raw material powder of the mayenite type compound having a chemical equivalent composition may be heated in a range of 400 to 1100 ° C. in a reducing atmosphere.
- the range of 600 to 900 ° C. is preferable, and 700 to 800 ° C. is more preferable. If it is less than 400 degreeC, reaction with the oxygen ion in a cage and a reducing agent is inadequate, and a high conduction electron density cannot be obtained.
- a temperature higher than 1100 ° C. a high conduction electron concentration can be obtained, but the specific surface area decreases due to sintering.
- the treatment time is preferably 3 hours or longer in order to sufficiently diffuse oxygen ions and exchange them with conduction electrons.
- the reducing agent is not particularly limited as long as it reacts with oxygen ions in the cage within the above heating temperature range, for example, alkali metals such as Na and Li, alkaline earth metals such as Mg, Ca, and CaH 2 and their hydrogen. Chemicals can be used. Since CaH 2 becomes CaO after reduction and remains as an impurity, it becomes a factor of reducing the effective surface area of the conductive mayenite type compound.
- the specific surface area of the mayenite-type compound powder that has undergone the treatment step including conduction electrons decreases as the treatment temperature during the process increases. For example, a sample obtained by pre-treating the mayenite-type compound powder at 800 ° C. has a temperature of 600 to 800 ° C. When the reduction treatment is performed in the temperature range of ° C., for example, it changes from 30 m 2 g ⁇ 1 to about 20 m 2 g ⁇ 1 .
- RTA treatment method A part of the surface of the mayenite type compound powder that has reacted with the reducing agent may be insulated by being covered with, for example, calcium oxide.
- the RTA method can be used as a method for reducing the insulating powder surface.
- the RTA method is an abbreviation for rapid temperature raising and heating method, and is known as a method for improving the crystallinity of a semiconductor.
- the rate of temperature rise is as slow as about 5 to 10 ° C. min ⁇ 1, and the reduction of the surface area due to particle sintering cannot be prevented.
- the crystallinity of the electride surface can be increased without reducing the surface area, and conduction including the surface of the mayenite type compound powder is possible.
- the temperature is increased at a temperature increase rate of 30 to 60 ° C. min ⁇ 1 in an inert atmosphere, a reducing atmosphere, or a vacuum, and the heating temperature is maintained at 900 to 1100 ° C. for 5 to 15 seconds. Then, the temperature raising and heating and holding steps are repeated 2 to 5 times.
- the holding temperature is in the range of 950 to 1100 ° C.
- ⁇ Process for producing catalyst using conductive mayenite type compound as carrier> Produces a catalyst by carrying a transition metal catalyst such as Ru on the conductive mayenite type compound powder produced by the above method by impregnation method, physical mixing method, thermal decomposition method, liquid phase method, sputtering method, or vapor deposition method. can do.
- a conductive mayenite type compound powder and a transition metal compound powder are solid-phase mixed by a physical mixing method, and then the transition metal compound is heated and reduced in a reducing atmosphere such as a hydrogen atmosphere in a temperature range of 50 to 600 ° C. By doing so, a supported metal catalyst is obtained. Before heating and reducing, it is desirable to repeat heating and maintenance several times in a vacuum in order to suppress sintering of the supported metal particles.
- the impregnation method includes a step of dispersing conductive mayenite type compound powder in a solvent solution of a transition metal compound, a step of forming a catalyst precursor composed of the transition metal compound by evaporating the solvent of the solvent solution, and a reducing atmosphere Heating in, reducing the transition metal compound to form the metal catalyst.
- the carrier powder on which the transition metal is supported includes the same amount of electrons as the original after the supporting step, and has a low work function as a carrier, so that the ability to donate electrons to the transition metal is large and the specific surface area of the carrier is large.
- the activation of nitrogen and hydrogen on the transition metal is remarkably promoted, and as a result, it functions as a high-performance ammonia synthesis catalyst as compared with the case where the conductive mayenite powder having a small specific surface area is used.
- the transition metal catalyst supported on the conductive mayenite type compound powder is used, and in the reactor, the raw material nitrogen and hydrogen are reacted at a reaction temperature of 100 to 600 ° C. and a reaction pressure of 10 kPa to 30 MPa.
- Ammonia can be synthesized by reacting on the catalyst.
- ⁇ Pretreatment> As a pretreatment, the powder was put in a silica glass tube and heated and taken out in a vacuum of 1 ⁇ 10 ⁇ 4 Pa at 900 ° C. for 5 hours.
- the specific surface area of the powder obtained at this stage was about 30 m 2 g ⁇ 1 .
- the Ta tube filled with the mixture was put in a silica glass tube and heated at 700 ° C. for 15 hours in a vacuum of 1 ⁇ 10 ⁇ 4 Pa.
- a conductive mayenite type compound powder having a conduction electron concentration of 1.0 ⁇ 10 21 cm ⁇ 3 and a specific surface area of 17 m 2 g ⁇ 1 was obtained.
- the sample sealed in a vacuum was taken out, ground in a mortar, and then packed again in a silica glass tube and sealed while pulling a vacuum. By heating this silica glass tube at 1100 ° C.
- a conductive mayenite type compound powder C12A7: e ⁇ (C12A7e 21 with a conduction electron concentration of about 2 ⁇ 10 21 cm ⁇ 3 and a specific surface area of 1 m 2 g ⁇ 1 Notation).
- a mayenite type compound powder having a large specific surface area was synthesized under the same conditions as in Example 1 except that the raw material was pretreated at 800 ° C instead of the pretreatment temperature of 900 ° C in Example 1.
- the specific surface area of the powder obtained at this stage was 40 m 2 g ⁇ 1 .
- a conductive mayenite compound powder was synthesized under the same conditions as in Example 1 except that the reduction treatment temperature in Example 1 was changed to 700 ° C. and reduced at 600 ° C.
- the conduction electron concentration was 1.0 ⁇ 10 21 cm ⁇ 3 and the specific surface area was 31 m 2 g ⁇ 1 .
- a conductive mayenite compound powder was synthesized under the same conditions as in Example 1 except that the reduction treatment temperature in Example 1 was changed to 700 ° C. and reduced at 600 ° C.
- the conduction electron concentration was 0.8 ⁇ 10 21 cm ⁇ 3 and the specific surface area was 20 m 2 g ⁇ 1 .
- Pretreatment> A mayenite type compound powder having a large specific surface area was synthesized under the same conditions as in Example 1 except that the raw material was pretreated at 800 ° C instead of the pretreatment temperature of 900 ° C in Example 1.
- the specific surface area at this stage was 40 m 2 g ⁇ 1 .
- the conductive mayenite compound powder was synthesized by reduction treatment under the same conditions as in Example 1.
- the conduction electron concentration was 1.0 ⁇ 10 21 cm ⁇ 3 and the specific surface area was 23 m 2 g ⁇ 1 .
- Pretreatment> A mayenite type compound powder having a large specific surface area was synthesized under the same conditions as in Example 1, except that the raw material pretreatment temperature in Example 1 was changed to 900 ° C and pretreated at 800 ° C. The specific surface area at this stage was 40 m 2 g ⁇ 1 .
- Example 2 ⁇ Electron injection by reduction treatment>
- the conductive mayenite compound powder was synthesized under the same conditions as in Example 1 except that the reduction treatment temperature in Example 1 was changed to 700 ° C. and reduced at 800 ° C.
- the conduction electron concentration was 0.4 ⁇ 10 21 cm ⁇ 3 and the specific surface area was 10 m 2 g ⁇ 1 .
- a mayenite type compound powder was synthesized in the same manner as in Example 1. However, the pretreatment of Example 1 was not performed, and the electron injection by the reduction treatment was not performed. The conduction electron concentration was zero and the specific surface area was 60 m 2 g ⁇ 1 .
- Example 2 The electride was synthesized under the same conditions as in Example 1 except that the pretreatment temperature of the raw material of Example 1 was changed to 900 ° C. and the pretreatment was performed at 1000 ° C. A conductive mayenite type compound powder having a conduction electron concentration of 1.4 ⁇ 10 21 cm ⁇ 1 and a specific surface area of 6 m 2 g ⁇ 1 was obtained.
- ⁇ Pretreatment> As a pretreatment of this raw material, the powder was placed in a silica glass tube and heated in a vacuum of 1 ⁇ 10 ⁇ 4 Pa at 800 ° C. for 20 hours while evacuating.
- RTA processing> Furthermore, in order to activate the surface of the powder, the process of filling the tammann tube and vacuum-sealing the tube, raising the temperature at a rate of 45 ° C. min ⁇ 1 and heating and holding at 950 ° C. for 5 seconds is repeated twice. RTA treatment. A conductive mayenite type compound powder having a conduction electron concentration of 0.5 ⁇ 10 21 cm ⁇ 1 and a specific surface area of 19 m 2 g ⁇ 1 was obtained.
- the conductive mayenite type compound powder was synthesized under the same conditions as in Example 7 except that the RTA treatment temperature in Example 7 was changed to 950 ° C. and the RTA treatment was carried out at a treatment temperature of 1000 ° C.
- a conductive mayenite type compound powder having a conduction electron concentration of 1.5 ⁇ 10 21 cm ⁇ 1 and a specific surface area of 14 m 2 g ⁇ 1 was obtained.
- Table 1 summarizes the synthesis and processing conditions of Examples 1 to 8 and Comparative Examples 1 and 2.
- the gas coming out from the flow reactor was bubbled into a 0.005 M sulfuric acid aqueous solution, the produced ammonia was dissolved in the solution, and the resulting ammonium ions were quantified by ion chromatography.
- the production rate of ammonia at 340 ° C. was 2388 micromolg ⁇ 1 h ⁇ 1 .
- a 2 wt% Ru-supported catalyst was prepared in the same manner as in Example 9 except that the conductive mayenite type compound powder having a specific surface area of 31 m 2 g ⁇ 1 obtained in Example 2 was used, and an ammonia synthesis reaction was carried out.
- the ammonia production rate at 340 ° C. was 1575 micromol-g ⁇ 1 h ⁇ 1 .
- a 2 wt% Ru-supported catalyst was prepared in the same manner as in Example 9 except that the conductive mayenite type compound powder having a specific surface area of 20 m 2 g ⁇ 1 obtained in Example 3 was used, and an ammonia synthesis reaction was carried out.
- the ammonia production rate at 340 ° C. was 1831 micromol ⁇ 1 h ⁇ 1 .
- a 2 wt% Ru-supported catalyst was prepared in the same manner as in Example 9 except that the conductive mayenite type compound powder having a specific surface area of 23 m 2 g ⁇ 1 obtained in Example 4 was used, and an ammonia synthesis reaction was carried out.
- the ammonia production rate at 340 ° C. was 1696 micromolg ⁇ 1 h ⁇ 1 .
- a 2 wt% Ru-supported catalyst was prepared in the same manner as in Example 9 except that the conductive mayenite type compound powder having a specific surface area of 10 m 2 g ⁇ 1 obtained in Example 5 was used, and an ammonia synthesis reaction was carried out.
- the ammonia production rate at 340 ° C. was 1793 micromol-g ⁇ 1 h ⁇ 1 .
- a 2 wt% Ru-supported catalyst was prepared in the same manner as in Example 9 except that the mayenite type compound powder having a specific surface area of 60 m 2 g ⁇ 1 obtained in Comparative Example 2 was used, and an ammonia synthesis experiment was performed.
- the ammonia production rate at 340 ° C. was 895 micromolg ⁇ 1 h ⁇ 1 .
- Table 2 The results of Examples 9 to 13 and Comparative Examples 3 and 4 are summarized in Table 2.
- the conductive mayenite type compound having a large specific surface area obtained by the production method of the present invention can be used as an electronic material such as a transparent electrode or a cold emitter having excellent electronic characteristics. Furthermore, it can be used as a high-performance reducing agent or catalyst material.
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Abstract
Description
(2)前記前駆体粉末を加熱脱水してマイエナイト型化合物粉末を形成する工程、
(3)前記マイエナイト型化合物粉末を不活性ガス雰囲気又は真空中で400~1100℃の温度範囲で、3時間以上加熱して活性化したマイエナイト型化合物粉末を形成する工程、
(4)前記活性化したマイエナイト型化合物粉末と還元剤を混合し、400~1100℃の温度範囲に加熱して還元処理によりマイエナイト型化合物に電子を注入する工程、
を少なくとも含む、伝導電子濃度が1015cm-3以上であり、比表面積が5m2g-1以上の導電性マイエナイト型化合物粉末の製造方法、である。
本発明の触媒は、アルカリ金属やアルカリ土類金属及びそれらの化合物を促進剤化合物に用いないでも高性能なアンモニア合成触媒となるが、必要に応じてこれらの促進剤化合物を用いてもかまわない。
マイエナイト型化合物の結晶は、内径0.4nm程度の籠状の構造(ケージ)がその壁面を共有し、三次元的に繋がることで構成される。通常、マイエナイト型化合物のケージの内部にはO2-などのアニオンが含まれているが、化学処理によってそれらを伝導電子に置換できる。アニール時間を長くすることで、マイエナイト型化合物中の伝導電子濃度は高くなる。
本発明の方法において、目的化合物の出発原料に用いるマイエナイト型化合物は、微粉末(一次粒子サイズ100nm以下)又は細孔構造を持ったバルクの多孔体であればより好ましい。マイエナイト型化合物を微粒子にすることにより、グラム当たりの表面積が増加し、粒子の間隙もメソ孔領域(2nmから100nm以下)になる。マイエナイト型化合物の前駆体となる水酸化物は、水熱処理法により得ることができる。
水熱合成法は結晶性の良い微粒子の無機酸化物を合成する方法として古くから検討されている。水やアルコール等の溶媒と原料を耐圧容器に入れて溶媒の沸点以上の温度で数時間~数日加熱することで前駆体化合物を得ることができる。
水熱処理を経由して合成した高比表面積のマイエナイト型化合物粉末は表面やケージ骨格内に強固に結合した水酸基を保有しており、伝導電子を含ませる工程で還元剤が水酸基と反応(2CaH2+2OH→2CaO+3H2)して消費されるため、電子を注入する工程の前処理工程により水酸基を極力なくして粉末の表面又はケージ骨格内を活性化しておく必要がある。前処理後の比表面積は前処理温度の上昇に伴い減少し、400~1000℃の温度範囲では比表面積は、例えば、60m2g-1から6m2g-1に変化する。
伝導電子を含んだマイエナイト型化合物の粉末を作製する場合、化学当量組成のマイエナイト型化合物の原料の粉末を還元雰囲気下、400~1100℃の範囲で加熱すればよい。好ましくは、600~900℃の範囲が、より好ましくは700~800℃が良い。400℃未満では、ケージ内の酸素イオンと還元剤との反応が不十分で、高い伝導電子濃度を得る事が出来ない。一方、1100℃超の温度では、高い伝導電子濃度を得ることができるが、シンタリングにより比表面積の低下が生じる。処理時間は十分に酸素イオンを拡散させ、伝導電子と交換させるため3時間以上が好ましい。
還元剤と反応したマイエナイト型化合物粉末の表面の一部は、例えば酸化カルシウムに覆われて絶縁的になっていることがある。この絶縁的になった粉末表面を還元する方法として、RTA法を使用できる。RTA法は迅速昇温加熱法の略であり、半導体の結晶性を向上させる方法として知られている。粉末の表面を加熱するための従来の方法では、昇温速度が5~10℃min-1程度と遅く、粒子のシンタリングによる表面積の低下を防ぐことはできなかった。一方、RTA法を用いると表面積を低下させることなく、エレクトライド表面の結晶性を上げることができ、かつマイエナイト型化合物粉末の表面を含めた伝導化が可能である。RTA法で結晶化する場合、不活性雰囲気、還元性雰囲気、又は真空中で30~60℃min-1の昇温速度で昇温し、加熱温度として900~1100℃で5~15秒間保持して、昇温と加熱保持工程を2~5回繰り返し加熱する。好ましくは、保持温度は950~1100℃の範囲が良い。
上記の方法で製造した導電性マイエナイト型化合物粉末にRu等の遷移金属触媒を含浸法、物理的混合法、熱分解法、液相法、スパッタリング法、又は蒸着法により担持させることにより触媒を製造することができる。物理的混合法は、導電性マイエナイト型化合物粉末と遷移金属化合物粉末とを物理的混合法により固相混合した後に水素雰囲気等の還元雰囲気で50~600℃の温度範囲で遷移金属化合物を加熱還元することによって担持金属触媒を得る。加熱還元の前に、真空中で昇温、維持を数回繰り返すことが担持金属粒子のシンタリングを抑制させる点で望ましい。
Ca(OH)2とAl(OH)3をCa:Al=12:14となるように秤量し、混合した。混合粉体の重量が10wt%となるように蒸留水を測りとり、合計160gを遊星型ボールミルにて4時間撹拌・混合した。得られた混合溶液を耐圧密閉容器に入れ、撹拌しながら150℃、6時間加熱処理(水熱処理)を施した。得られた沈殿物を濾別し、乾燥後粉砕してマイエナイト型化合物の前駆体粉末:Ca3Al2(OH)12約20gを得た。この前駆体粉末を大気中で600℃、5時間加熱脱水を施し、原料の比表面積の大きいマイエナイト型化合物粉体を得た。この原料の比表面積は60m2g-1であった。
前処理として前記粉体をシリカガラス管内に入れ、1×10-4Paの真空中で900℃、5時間排気しながら加熱して取り出した。この段階で得られた粉体の比表面積は約30m2g-1であった。
前処理後の粉体3gに対し還元剤であるCaH2を0.4g加え十分に混合して混合物とした後、Ta製チューブに前記混合物を詰めた。前記混合物の詰まったTa製チューブをシリカガラス管内に入れて、1×10-4Paの真空中で700℃、15時間加熱した。伝導電子濃度が1.0×1021cm-3、比表面積が17m2g-1の導電性マイエナイト型化合物粉末を得た。
[比較例1]
CaCO3及びAl2O3の各粉末をCaとAlの割合が11:14となるように混合し、合計30gをアルミナ坩堝中にて1300℃で6時間加熱した。得られた粉末をシリカガラス管内に挿入し1×10-4Paの真空中で1100℃、15時間加熱し原料のマイエナイト型化合物粉末を得た。この段階で得られた粉体の比表面積は1m2g-1以下であった。
上記の合成法によって得た粉末3gを、シリカガラス管内に金属Ca粉末0.18gとともに挿入し、700℃で15時間加熱することにより内部を金属Ca蒸気雰囲気として粉体と反応させた。真空に封管された試料を取り出し、乳鉢ですりつぶした後、再びシリカガラス管内に詰めて真空に引きながら封管した。このシリカガラス管を1100℃、2時間加熱することで伝導電子濃度が約2×1021cm-3、比表面積は1m2g-1の導電性マイエナイト型化合物粉末C12A7:e-(C12A7e21と表記する)を得た。
実施例1の還元処理温度を700℃に代えて、600℃で還元処理した以外は実施例1と同じ条件で導電性マイエナイト化合物粉末の合成を実施した。伝導電子濃度が1.0×1021cm-3であり、比表面積は31m2g-1であった。
実施例1の還元処理温度を700℃に代えて、600℃で還元処理した以外は実施例1と同じ条件で導電性マイエナイト化合物粉末の合成を実施した。伝導電子濃度が0.8×1021cm-3であり、比表面積は20m2g-1であった。
実施例1の原料の前処理温度900℃に代えて、800℃で前処理した以外は実施例1と同じ条件で比表面積の大きいマイエナイト型化合物粉末の合成を実施した。この段階の比表面積は40m2g-1となっていた。
実施例1と同様の条件で還元処理して導電性マイエナイト化合物粉末の合成を実施した。伝導電子濃度が1.0×1021cm-3であり、比表面積は23m2g-1であった。
実施例1の原料前処理温度900℃に代えて、800℃で前処理した以外は実施例1と同じ条件で比表面積の大きいマイエナイト型化合物粉末の合成を実施した。この段階の比表面積は40m2g-1となっていた。
実施例1の還元処理温度を700℃に代えて、800℃で還元処理した以外は実施例1と同じ条件で導電性マイエナイト化合物粉末の合成を実施した。伝導電子濃度が0.4×1021cm-3であり、比表面積は10m2g-1であった。
[比較例2]
実施例1の原料の前処理温度900℃に代えて、1000℃で前処理した以外は実施例1と同じ条件でエレクトライドの合成を実施した。伝導電子濃度が1.4×1021cm-1、比表面積が6m2g-1の導電性マイエナイト型化合物粉末が得られた。
実施例1で得たCa3Al2(OH)12を酸素気流中、800℃で2時間加熱脱水し、原料のマイエナイト型化合物粉末を得た。
この原料の前処理として粉体をシリカガラス管内に入れ、1×10-4Paの真空中で800℃、20時間排気しながら加熱した。
実施例1のCaH2の代わりに、還元剤としてCaメタルを用いた。前処理後の粉体2gに対し還元剤であるCaメタルを0.12g加えて、シリカガラス管内に入れて、1×10-4Paの真空中で700℃、15時間加熱した。
さらに粉体の表面活性化のため、タンマン管に詰めて真空封管したのち、45℃min-1の昇温速度で昇温し、950℃で5秒間加熱保持する工程を、2回繰り返してRTA処理した。伝導電子濃度は0.5×1021cm-1、比表面積が19m2g-1の導電性マイエナイト型化合物粉末が得られた。
実施例1で得られた電子注入量が1.0×1021cm-3であり、比表面積が17m2g-1のC12A7e-粉末1gとRu3(CO)120.042gをパイレックス(登録商標)ガラス管に入れ、真空封管した。真空封管したものを電気炉内で回転させながら以下のプログラムで加熱処理をした。
その後、真空封管を破り、水素ガス(26.7kPa)雰囲気下、300℃で5時間昇温、2時間加熱処理をすることで、2wt%のRuを担持した導電性マイエナイト型化合物粉末を得た。
窒素ガス(N2)と水素ガス(H2)を反応させてアンモニアガス(NH3)を生成する反応を行った。得られた触媒0.2gを石英ガラス管に詰め、固定床流通系反応装置に取り付けて反応を行った。ガスの流量は、N2:15mL
min-1,H2:45mLmin-1,計60mLmin-1に設定し、圧力:大気圧、反応温度:320~400℃で反応を行った。流通系の反応器から出てきたガスを0.005M硫酸水溶液中にバブリングさせ、生成したアンモニアを溶液中に溶解させ、生じたアンモニウムイオンをイオンクロマトグラフにより定量した。340℃におけるアンモニアの生成速度は、2388マイクロmolg-1h-1であった。
比較例1で得られた電子注入量が2.0×1021cm-3であり、比表面積が1m2g-1のC12A7e21粉末を使う以外は実施例9と同様な方法で2wt%Ru担持触媒を調製し、アンモニア合成反応を実施した。340℃におけるアンモニア生成速度は、1229マイクロmolg-1h-1であった。
[比較例4]
実施例9~13、比較例3、4の結果を表2にまとめて示す。
Claims (9)
- (1)マイエナイト型化合物の原料粉末と水の混合物を水熱処理してマイエナイト型化合物の前駆体粉末を形成する工程、
(2)前記前駆体粉末を加熱脱水してマイエナイト型化合物粉末を形成する工程、
(3)前記マイエナイト型化合物粉末を不活性ガス雰囲気又は真空中で400~1000℃の温度範囲で、3時間以上加熱して活性化したマイエナイト型化合物粉末を形成する工程、
(4)前記活性化したマイエナイト型化合物粉末と還元剤を混合し、400~1100℃の温度範囲に加熱して還元処理によりマイエナイト型化合物に電子を注入する工程、
によって伝導電子濃度が1015cm-3以上であり、比表面積が5m2g-1以上の導電性マイエナイト型化合物粉末を得ることを特徴とするマイエナイト型化合物の製造方法。 - 請求項1記載の製造方法において、工程(4)の後に、さらに、(5)迅速昇温加熱法(RTA法)により、30~60℃min-1の昇温速度、900~1100℃の加熱保持を繰り返す工程を有することを特徴とするマイエナイト型化合物の製造方法。
- マイエナイト型化合物が、12CaO・7Al2O3であることを特徴とする請求項1又は2記載のマイエナイト型化合物の製造方法。
- 還元剤が、Ca又はCaH2であることを特徴とする請求項1又は2記載のマイエナイト型化合物の製造方法。
- 請求項1又は2に記載した方法で製造した導電性マイエナイト型化合物粉末に遷移金属触媒を含浸法、物理的混合法、熱分解法、液相法、スパッタリング法又は蒸着法により担持させることを特徴とする担持金属触媒の製造方法。
- 請求項5記載の方法で製造した担持金属触媒を窒素ガス(N2)と水素ガス(H2)を反応させてアンモニアガス(NH3)を生成する合成反応に用いることを特徴とするアンモニア合成法。
- 請求項1記載の工程(1)~(3)で得られた、粉末の表面又はケージ骨格内を活性化したことを特徴とするマイエナイト型化合物粉末。
- 請求項1記載の工程(1)~(4)で得られた、伝導電子濃度が1015cm-3以上であり、比表面積が5m2g-1以上であることを特徴とするマイエナイト型化合物。
- 請求項5記載の方法で得られた、導電性マイエナイト型化合物粉末に遷移金属触媒を担持させたことを特徴とする担持金属触媒。
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BR112015003948A BR112015003948A8 (pt) | 2012-08-30 | 2013-08-20 | Método para produção de pó e composto maienite condutivo, método para produção de um catalisador metálico apoiado, e método para sintetizar amônia |
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US11964260B2 (en) | 2016-08-08 | 2024-04-23 | Tokyo Institute Of Technology | Method for manufacturing ammonia synthesis catalyst, and method for manufacturing ammonia |
WO2019156029A1 (ja) * | 2018-02-07 | 2019-08-15 | 国立大学法人東京工業大学 | 複合物、触媒及びアンモニアの製造方法 |
JPWO2019156028A1 (ja) * | 2018-02-07 | 2021-01-28 | 国立大学法人東京工業大学 | 複合物、複合物の製造方法、触媒及びアンモニアの製造方法 |
JPWO2019156029A1 (ja) * | 2018-02-07 | 2021-01-28 | 国立大学法人東京工業大学 | 複合物、触媒及びアンモニアの製造方法 |
WO2019156028A1 (ja) * | 2018-02-07 | 2019-08-15 | 国立大学法人東京工業大学 | 複合物、複合物の製造方法、触媒及びアンモニアの製造方法 |
JP7410507B2 (ja) | 2018-02-07 | 2024-01-10 | 国立大学法人東京工業大学 | 複合物、触媒及びアンモニアの製造方法 |
JP2020142203A (ja) * | 2019-03-07 | 2020-09-10 | 太平洋マテリアル株式会社 | 支持体固定化触媒担体 |
JP7269563B2 (ja) | 2019-03-07 | 2023-05-09 | 太平洋マテリアル株式会社 | 支持体固定化触媒担体 |
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CA2881788C (en) | 2020-03-24 |
BR112015003948A2 (pt) | 2021-08-03 |
US9573822B2 (en) | 2017-02-21 |
CN106277000B (zh) | 2019-01-22 |
US20170095793A1 (en) | 2017-04-06 |
RU2647290C2 (ru) | 2018-03-15 |
EP2891627A4 (en) | 2016-06-15 |
JPWO2014034473A1 (ja) | 2016-08-08 |
BR112015003948A8 (pt) | 2021-09-14 |
EP2891627A1 (en) | 2015-07-08 |
CN104583129A (zh) | 2015-04-29 |
JP6152381B2 (ja) | 2017-06-21 |
EP2891627B1 (en) | 2024-10-02 |
CN104583129B (zh) | 2016-09-07 |
CN106277000A (zh) | 2017-01-04 |
US20150239747A1 (en) | 2015-08-27 |
CA2881788A1 (en) | 2014-03-06 |
RU2015111257A (ru) | 2016-10-27 |
US10124319B2 (en) | 2018-11-13 |
KR20150051215A (ko) | 2015-05-11 |
KR101940777B1 (ko) | 2019-01-22 |
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