WO2014017273A1 - Conditionnement permettant de loger un élément semi-conducteur et dispositif semi-conducteur - Google Patents

Conditionnement permettant de loger un élément semi-conducteur et dispositif semi-conducteur Download PDF

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Publication number
WO2014017273A1
WO2014017273A1 PCT/JP2013/068518 JP2013068518W WO2014017273A1 WO 2014017273 A1 WO2014017273 A1 WO 2014017273A1 JP 2013068518 W JP2013068518 W JP 2013068518W WO 2014017273 A1 WO2014017273 A1 WO 2014017273A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor element
package
ceramic laminate
housing
metal substrate
Prior art date
Application number
PCT/JP2013/068518
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English (en)
Japanese (ja)
Inventor
真広 辻野
Original Assignee
京セラ株式会社
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Filing date
Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to JP2014526839A priority Critical patent/JP5873174B2/ja
Publication of WO2014017273A1 publication Critical patent/WO2014017273A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/44—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements the complete device being wholly immersed in a fluid other than air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC

Definitions

  • the present invention relates to a semiconductor element storage package and a semiconductor device.
  • CMOS complementary metal-oxide-semiconductor
  • semiconductor elements such as semiconductor laser diodes and photodiodes, integrated circuits such as IC chips and LSIs, and semiconductor element storage for storing semiconductor elements and integrated circuits Packages are known (for example, Japanese Patent Application Laid-Open No. 2001-319984).
  • a semiconductor device is configured by housing a semiconductor element in such a package and assembling the semiconductor element so as to be electrically connected to the outside of the package.
  • a connector for electrical connection with the outside is incorporated in a frame surrounding the semiconductor element.
  • the semiconductor element storage package has been studied how to efficiently dissipate the heat generated by the semiconductor element to the outside. Due to the heat generated by the semiconductor element, the temperature of the region surrounded by the frame body may become high, and the package itself may be destroyed.
  • An object of the present invention is to provide a package for housing a semiconductor element and a semiconductor device capable of reducing the possibility of the package being destroyed by heat.
  • a package for housing a semiconductor element includes a ceramic laminate having a through-hole penetrating vertically, and a heat dissipating member fitted in the through-hole and having a mounting region for mounting a semiconductor element.
  • the semiconductor element storage package includes a frame provided on the ceramic laminated body so as to surround the heat radiating member, and an opening provided on the lower surface of the ceramic laminated body for exposing the lower surface of the heat radiating member.
  • the metal substrate which has this.
  • a semiconductor device includes the semiconductor element storage package, a semiconductor element mounted in the mounting region, and a lid on the frame.
  • FIG. 1 is an overview perspective view showing a lower surface of a semiconductor device according to an embodiment of the present invention.
  • FIG. 2 is a schematic perspective view showing the inside of the semiconductor device according to the embodiment of the present invention.
  • FIG. 3 is an exploded perspective view of a package for housing a semiconductor device according to an embodiment of the present invention.
  • FIG. 4 is a top view showing the inside of the semiconductor device according to the embodiment of the present invention.
  • FIG. 5 is a bottom view showing the bottom surface of the semiconductor device according to the embodiment of the present invention.
  • FIG. 6 is a side view showing a side surface of the semiconductor device according to the embodiment of the present invention.
  • FIG. 7 is a cross-sectional view showing the inside of the semiconductor device according to one embodiment of the present invention.
  • FIG. 8 is a cross-sectional view showing the inside of a semiconductor device according to a modification.
  • FIG. 9 is a bottom view showing a bottom surface of a semiconductor device according to a modification.
  • the semiconductor device 1 is a device for processing an electrical signal from the outside with a semiconductor element and outputting the same to the outside.
  • a semiconductor element 2 such as an IC, an LSI, a light emitting diode, a semiconductor laser diode, or a photodiode is mounted. It is used to do.
  • the semiconductor element 2 is mounted on the base 2a.
  • the pedestal 2 a is provided in the mounting region R inside the semiconductor element storage package 3.
  • the base 2a mounts the semiconductor element 2 and can adjust the height position of the semiconductor element 2.
  • the pedestal 2a is made of an insulating material, and electrical wiring that is electrically connected to the semiconductor element 2 is formed on the upper surface of the pedestal 2a.
  • the semiconductor device 1 includes a semiconductor element 2, a semiconductor element storage package 3, and a lid 4.
  • the semiconductor element storage package 3 includes a ceramic laminate 31 having a through-hole H penetrating vertically, a heat dissipation member 32 having a mounting region R for mounting the semiconductor element 2 fitted in the through-hole H, and a ceramic laminate.
  • a metal frame 34 having a frame 33 provided so as to surround the heat radiating member 32 on the surface 31 and an opening A that is provided on the lower surface of the ceramic laminate 31 and exposes the lower surface of the heat radiating member 32 is provided.
  • the semiconductor element storage package 3 further includes a connector member 35 on the side surface of the ceramic laminate 31 for electrically connecting the inside of the frame 33 and the outside of the frame 33.
  • the ceramic laminate 31 is a plate-like body having through holes H that penetrate vertically.
  • the ceramic laminate 31 includes a plurality of insulating layers such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, or a glass ceramic. Layers are stacked. Further, the heat radiating member 32 having the mounting region R in which the semiconductor element 2 is mounted fits into the through hole H of the ceramic laminate 31.
  • the ceramic laminate 31 is a rectangular plate-like body, and has four corners chamfered in plan view.
  • the ceramic laminate 31 does not include a chamfered portion, and the length of one side is set to, for example, 10 mm or more and 50 mm or less.
  • the ceramic laminate 31 is set to have a vertical thickness of, for example, 1 mm or more and 6 mm or less.
  • the ceramic laminate 31 has a rectangular parallelepiped through-hole H formed therein.
  • the through hole H is set to have a side length of, for example, 5 mm or more and 30 mm or less in plan view. Further, the length of the through hole H in the vertical direction is, for example, not less than 1 mm and not more than 6 mm, and matches the thickness of the ceramic laminate 31 in the vertical direction.
  • a wiring conductor 36 is formed on the upper surface of the ceramic laminate 31 by sintering a metal paste containing a metal such as molybdenum or manganese.
  • the wiring conductor 36 is formed from the upper surface of the ceramic laminate 31 to the lower surface of the ceramic laminate 31 through the ceramic laminate 31.
  • the heat dissipating member 32 is provided by being fitted in the through hole H of the ceramic laminate 31.
  • the heat dissipation member 32 dissipates heat generated by the semiconductor element 2 to the outside.
  • the heat dissipation member 32 is made of, for example, a metal material such as copper, iron, tungsten, molybdenum, nickel, or cobalt, or an alloy containing these metal materials.
  • the heat radiating member 32 is manufactured in a predetermined shape by using a conventionally known metal processing method such as rolling or punching for an ingot obtained by casting a molten metal material into a mold and solidifying it.
  • the heat conductivity of the heat radiating member 32 is set to 15 W / (m ⁇ K) or more and 450 W / (m ⁇ K) or less, for example.
  • the thermal expansion coefficient of the heat radiating member 32 is set to, for example, 3 ⁇ 10 ⁇ 6 / K or more and 28 ⁇ 10 ⁇ 6 / K or less.
  • the heat radiating member 32 is sized to fit in the through hole H and is formed in a rectangular parallelepiped shape.
  • the heat radiating member 32 has a side length of, for example, 5 mm to 30 mm in plan view.
  • the length of the heat dissipation member 32 in the vertical direction is, for example, 1 mm or more and 8 mm or less, and the size of the through hole H such that the lower surface of the heat dissipation member 32 contacts the external mounting substrate and the metal substrate 34. It corresponds to the thickness of.
  • the heat dissipating member 32 is sized to fit in the through hole H, and the height position of the upper surface is set lower than the height position of the upper opening edge of the through hole H. Even if the semiconductor element 2 is mounted on the mounting region R on the heat dissipation member 32 by making the height position of the upper surface of the heat dissipation member 32 lower than the height position of the upper opening edge of the through hole H, the upper surface of the semiconductor element 2 The height position of the semiconductor device housing package 3 and the semiconductor device 1 can be reduced in thickness in the vertical direction.
  • the heat radiation member 32 is set so that the height position of the lower surface is the same as the height position of the lower opening edge of the through hole H.
  • the lower surface of the heat radiating member 32 is connected to an external mounting substrate via a joining member such as solder or brazing material.
  • a joining member such as solder or brazing material.
  • the joining member is accommodated in the lower opening edge of the through hole H, the joining property and mounting property of the semiconductor device 1 to the mounting substrate can be improved.
  • a frame 33 is provided on the upper surface of the ceramic laminate 31 so as to surround the mounting region R.
  • the frame body 33 is provided continuously along the outer edge of the ceramic laminate 31.
  • the frame body 33 is a frame-shaped member and protects the semiconductor element 2 from the outside.
  • the frame 33 is provided on the ceramic laminate 31 so as to surround the mounting region R on which the semiconductor element 2 is mounted.
  • the frame 33 is composed of, for example, a plurality of insulating layers such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, or a glass ceramic. Laminated.
  • the frame 33 may be formed integrally with the ceramic laminate 31 or may be formed separately from the ceramic laminate 31.
  • the frame 33 may be made of, for example, a metal material such as copper, iron, tungsten, molybdenum, nickel, or cobalt, or an alloy containing these metal materials.
  • a joining member such as solder or brazing material.
  • the frame 33 has a vertical thickness of, for example, 0.3 mm or more and 6 mm or less, and is set to be larger than the thickness of the semiconductor element 2.
  • the frame 33 is chamfered at four corners in plan view.
  • the frame 33 does not include a chamfered portion in plan view, and the length of one side of the outer edge is set to, for example, 10 mm or more and 50 mm or less.
  • the frame 33 is set to have a length of one side of the inner edge of, for example, 8 mm or more and 48 mm or less in plan view.
  • the connector member 35 is for connecting a coaxial terminal.
  • the connector member 35 can connect an external coaxial terminal to electrically connect the inside of the frame 33 and the outside of the frame 33.
  • the connector member 35 is provided on the side surface of the ceramic laminate 31 as shown in FIGS.
  • the connector member 35 has a cylindrical tubular body 351 and an internal conductor 353 made of a rod-shaped conductor provided on the central axis via an insulating member 352 such as glass.
  • the connector member 35 is fitted into a through portion of the side wall of the frame body 33.
  • the inner conductor 353 is made of, for example, a metal material such as copper, iron, tungsten, molybdenum, nickel, or cobalt, or an alloy containing these metal materials, and is electrically connected to the semiconductor element 2.
  • the connector member 35 may not be provided on the side wall of the frame 33 as long as it can electrically connect the inside of the frame 33 and the outside of the frame 33.
  • the connector member 35 may be provided on the side surface of the ceramic laminate 31, and the internal conductor 353 may be connected to the wiring conductor 36 formed on the upper surface of the ceramic laminate 31.
  • the metal substrate 34 is provided on the lower surface of the ceramic laminate 31.
  • the metal substrate 34 has an opening A that exposes the lower surface of the heat dissipation member 32.
  • the metal substrate 34 is for connecting the semiconductor element housing package 3 to an external mounting substrate through a bonding material such as solder, brazing material, glass bonding material, or resin bonding material.
  • the metal substrate 34 is made of, for example, a metal material such as copper, iron, tungsten, molybdenum, nickel, or cobalt, or an alloy containing these metal materials.
  • the metal substrate 34 is manufactured in a predetermined shape by using a conventionally known metal processing method such as rolling or punching for an ingot obtained by casting and solidifying a molten metal material into a mold.
  • the thermal conductivity of the metal substrate 34 is set to, for example, 15 W / (m ⁇ K) or more and 450 W / (m ⁇ K) or less.
  • the thermal expansion coefficient of the metal substrate 34 is set to, for example, 3 ⁇ 10 ⁇ 6 / K or more and 28 ⁇ 10 ⁇ 6 / K or less.
  • the opening A of the metal substrate 34 has a rectangular shape and is sized to expose the lower surface of the heat dissipation member 32.
  • the length of one side of the opening A corresponds to the length of one side of the heat radiation member 32, and is set to, for example, 5 mm or more and 30 mm or less.
  • the length of the opening A in the vertical direction is set to, for example, 1 mm or more and 5 mm or less, and matches the thickness of the metal substrate 34 in the vertical direction.
  • the metal substrate 34 is formed with the opening A that exposes the lower surface of the heat radiating member 32, so that the heat generated by the semiconductor element 2 is transmitted to the heat radiating member 32, and the external surface is exposed from the lower surface of the heat radiating member 32 exposed from the opening A. Can be dissipated towards.
  • the metal substrate 34 has a hole B1 (first hole) that exposes a part of the lower surface of the ceramic laminate 31 between the connector member 35 and the opening A when viewed from the lower surface. Part).
  • the first hole B1 has a rectangular shape, and the length of one side is set to, for example, 1 mm or more and 30 mm or less.
  • the connector member 35 tends to concentrate heat due to the current flowing through the coaxial terminal, and the heat from the semiconductor element 2 generated when the semiconductor device 1 is operated is the heat radiating member 32, the ceramic laminate 31, the metal substrate.
  • the metal substrate 34 on the lower surface of the ceramic laminate 31 tends to be peeled off from the outer peripheral portion, or due to thermal stress caused by the difference in thermal expansion coefficient between the frame body 33 and the connector member 35, Peeling or cracking may occur in the vicinity. Therefore, by providing the first hole B1 between the connector member 35 and the heat radiating member 32 when viewed from the bottom, even if the metal substrate 34 is thermally expanded and contracted, the thermal stress is different from that of the ceramic laminate 31. Similarly, heat from the semiconductor element 2 generated when the semiconductor device 1 is operated is hardly applied between the metal substrate 34 and the outer peripheral portion of the joint portion between the ceramic laminate 31 and the metal substrate 34 or the frame 33. It can be made difficult to be conducted near the joint between the connector member 35 and the connector member 35.
  • the stress due to thermal deformation of the metal substrate 34 causes the metal substrate 34, the ceramic laminate 31, and the like. It can be made difficult to communicate during.
  • the metal substrate 34 is formed with a notch C that exposes the edge of the lower surface of the ceramic laminate 31. As shown in FIG. 5, the notches C are provided on three sides of the metal substrate 34 except for one side of the ceramic laminate 31 on which the connector member 35 is disposed. Lead terminals 37 are provided on the lower surface of the ceramic laminate 31 where the notches C of the metal substrate 34 are formed. Note that the plurality of lead terminals 37 are spaced apart so as to be electrically insulated from each other.
  • the metal substrate 34 has a convex portion 34 a whose outer edge extends in four directions when viewed from below.
  • the convex portions 34 a extend toward the four corners of the ceramic laminate 31. Further, at least one portion is recessed toward the inside of the outer edge of the ceramic laminate 31 between the convex portions 34 a.
  • a lead terminal 37 is provided on the lower surface of the ceramic laminate 31 in the recess of the metal substrate 34.
  • the dent corresponds to the portion where the notch C is formed.
  • a metal layer connected to a plurality of via conductors corresponding to the plurality of lead terminals 37 is provided on the lower surface of the ceramic laminate 31.
  • Each of the plurality of lead terminals 37 is connected to a metal layer connected to each via conductor.
  • the plurality of via conductors are electrically connected to the semiconductor element 2 mounted on the upper surface of the ceramic multilayer body 31 via the wiring conductor 36 through the ceramic multilayer body 31.
  • the lead terminal 37 is bonded to a metal layer electrically connected to the lower surface of the ceramic laminate 31 via a via conductor, for example, via a bonding member such as solder or brazing material.
  • a plurality of through conductors 38 are provided along the vertical direction.
  • the plurality of through conductors 38 are connected to the upper surface of the metal substrate 34 at the lower ends of the through conductors 38.
  • the plurality of through conductors 38 are electrically connected to a part of the wiring pattern formed on the upper surface of the ceramic laminate 31.
  • the heat in the region surrounded by the frame 33 can be transmitted from a part of the wiring pattern to the metal substrate 34 through the through conductor 38. As a result, the heat in the frame 33 can be easily released toward the outside.
  • the through conductors 38 may be provided on both sides of the heat radiating member 32 in a sectional view.
  • the through conductor 38 By providing the through conductor 38 in the vicinity of the side surface of the heat radiating member 32, heat transmitted from the heat radiating member 32 into the ceramic laminate 31 can be easily transmitted to the metal substrate 34 and the mounting substrate by the through conductor 38. As a result, it is possible to suppress the heat radiating member 34 from becoming high temperature and to prevent the heat radiating member 34 from thermally expanding and destroying the ceramic laminate 31.
  • the heat transmitted from the semiconductor element 2 to the heat radiating member 32 can be transmitted to the through conductors 38 on both sides with little deviation from the both side surfaces of the heat radiating member 32.
  • the metal substrate 34 has a hole B2 (also referred to as a second hole) that exposes a part of the lower surface of the ceramic laminate 31 between the opening A and the notch C.
  • the second hole B2 has a rectangular shape, and the length of one side is set to, for example, 1 mm or more and 25 mm or less.
  • An opening A is provided between the pair of second holes B2.
  • the lead terminal 37 tends to concentrate heat due to the current flowing through the lead terminal 37, and the heat from the semiconductor element 2 generated when the semiconductor device 1 is operated is heat radiating member 32, ceramic laminate 31, metal By conducting the substrate 34, heat is easily transmitted around the notch C of the metal substrate 34.
  • the thermal stress from the lead terminal 37 can be easily relieved and generated when the semiconductor device 1 is operated. Therefore, it is possible to make it difficult to conduct heat from the semiconductor element 2 to the notch C. Then, thermal stress is applied between the ceramic laminate 31 and the metal substrate 34 to suppress the metal substrate 34 from being peeled off, or to suppress cracks generated at the joint between the ceramic laminate 31 and the metal substrate 34. You can do it.
  • a lid 4 is provided on the frame 33 so as to cover the semiconductor element 2.
  • the lid body 4 hermetically seals a region surrounded by the frame body 33.
  • the lid 4 is made of, for example, a metal such as copper, tungsten, iron, nickel, or cobalt, an alloy containing a plurality of these metals, an aluminum oxide sintered body, a mullite sintered body, or a silicon carbide sintered body. It consists of ceramics such as an aluminum nitride sintered body, a silicon nitride sintered body, or glass ceramics.
  • the lid 4 is joined to the upper surface of the frame 33 via a joining member such as solder or brazing material.
  • the region surrounded by the frame 33 is filled with a vacuum state or nitrogen gas, and the region surrounded by the frame 33 is hermetically sealed by providing the lid 4 on the frame 33. can do.
  • the lid 4 is placed on the frame 33 in a predetermined atmosphere, and the seal ring joined onto the sealing conductor pattern of the frame 33 and the sealing member of the lid 33 are welded to each other. It is attached on the frame 33 by applying an electric current to the lid 33 and performing seam welding.
  • the lid 33 can be attached via a bonding material such as a brazing material, a glass bonding material, or a resin bonding material.
  • a heat dissipation member 32 is provided in the through hole H of the ceramic laminate 31, and an opening is provided so that the lower surface of the heat dissipation member 32 is exposed on the lower surface of the ceramic laminate 31.
  • a metal substrate 34 provided with the part A is provided.
  • the heat transmitted from the semiconductor element 2 is easily dissipated to the outside, so that it is possible to suppress the occurrence of cracks due to the concentration of thermal stress on the ceramic laminate 31, the frame 33, or the connector member 35.
  • By efficiently dissipating the heat generated by the element 2 to the outside it is possible to provide the semiconductor element housing package 3 and the semiconductor device 1 that can reduce the risk of the package being destroyed.
  • the heat radiating member 32 has a size that allows the heat radiating member 32 to fit into the through hole H, and the lower surface is a lower portion of the through hole H as long as the thickness of the metal substrate 34 is also taken into consideration. You may protrude below the height position of an opening edge.
  • the heat radiating member 32 is formed with an extending portion 32a extending laterally at the lower end of the side surface. The vertical thickness of the extending portion 32a matches the vertical thickness of the metal substrate 34.
  • the upper surface of the extending portion 32 a is connected to the lower surface of the ceramic laminate 31.
  • the heat radiating member 32 By providing the extended portion 32a in the heat radiating member 32, it is easy to align the heat radiating member 32 with the through hole H, the heat radiating member 32 can be provided at a desired position, and the area of the lower surface of the heat radiating member 32 is reduced.
  • the area of the upper surface of the heat radiating member 32 can be made larger, and the heat radiating member 32 can be stably mounted on an external substrate.
  • the extension part 32a can increase the connection area between the heat dissipation member 32 and the ceramic laminate 31 by connecting the upper surface of the extension part 32a to the lower surface of the ceramic laminate 31, and the heat dissipation member 32 is thermally expanded. Therefore, it is possible to prevent the ceramic laminate 31 from being detached.
  • the lower surface of the heat radiating member 32 may be disposed below the lower surface of the ceramic laminate 31, and the lower surface of the heat radiating member 32 may be, for example, solder or brazing material,
  • a bonding material such as a glass bonding material or a resin bonding material
  • the bonding property of the semiconductor device 1 to the mounting substrate is improved by increasing the volume of the bonding material provided between the metal substrate 34 and the mounting substrate.
  • the inside of the frame 33 is hermetically sealed, and the heat generated by the semiconductor element 2 is easily transmitted to the heat radiating member 32.
  • the heat transmitted to the heat radiating member 32 is dissipated from the lower surface of the heat radiating member 32 via the heat radiating member 32 toward the external mounting substrate via the connecting member.
  • thermal stress due to the difference in thermal expansion coefficient is likely to occur in the ceramic laminate 31, the frame 33, or the connector member 35.
  • the connector member 35 is joined to the frame body 33 by a brazing material, or when the lid body 4 is joined by seam welding via a seal ring joined to the upper surface of the frame body 33.
  • the first hole B1 is provided between the connector member 35 and the opening A, which is short from the connector member 35.
  • the metal substrate 34 is less likely to be thermally deformed. Further, in each manufacturing process in which heat is applied to the semiconductor element storage package 3 and the semiconductor device 1, thermal stress due to thermal expansion and contraction of the metal substrate 34 is reduced by the first hole B 1, and the metal substrate 34 is While being able to suppress peeling from the ceramic laminate 31, it is possible to suppress cracks generated in the ceramic laminate 31. Even if the heat generated in the lead terminal 37 is transmitted to the metal substrate 34, the second hole B2 is provided between the notch C and the opening A, which is short from the lead terminal 37.
  • the metal substrate 34 is less likely to be thermally deformed. Further, in each manufacturing process in which heat is applied to the semiconductor element housing package 3 and the semiconductor device 1, thermal stress due to thermal expansion and contraction of the metal substrate 34 is reduced by the second hole B 2, and the metal substrate 34 is While being able to suppress peeling from the ceramic laminate 31, it is possible to suppress cracks generated in the ceramic laminate 31. Furthermore, in the first hole B1, since the metal substrate 34 and the ceramic laminate 31 are not joined, bonding failure due to voids generated in solder or the like joining the ceramic laminate 31 and the metal substrate 34, or voids The metal substrate 34 can be prevented from peeling off from the ceramic laminate 31 due to the thermal stress as the starting point, and cracks generated in the ceramic laminate 31 can be suppressed.
  • FIG. 9 is a bottom view of the semiconductor device 1 according to a modification. 9 is a portion of the outer edge of the ceramic laminate 31 that is covered with the metal substrate 34x.
  • the metal substrate 34 x may not have the size of the convex portion 34 a within the outer edge of the ceramic laminate 31.
  • the convex portion 34 a of the metal substrate 34 x may extend outward from the outer edge of the ceramic laminate 31. Since the protrusion 34a extends outward from the outer edge of the ceramic laminate 31, the semiconductor device 1 is mounted on a desired mounting substrate while confirming the four corners and the outer peripheral portion of the metal substrate 34 in a top view. Can be mounted and mounted in position.
  • the protruding portion 34 a is provided with an overhang portion 341 a extending in a direction along the lead terminal 37.
  • the overhang portion 341 a is provided with a space from the lead terminal 37.
  • the overhang portion 341 a extends perpendicular to the end surface of the ceramic laminate 31.
  • the overhang portion 341a overhangs, for example, with a length of 1 mm or more and 3 mm or less with reference to the end surface of the ceramic laminate 31. Since the protruding portion 34a has the overhang portion 341a, the lead terminal 37 is protected by the overhang portion 341a, and it is possible to reduce the possibility that the tip of the lead terminal 37 is deformed by applying force.
  • the space between the convex portions 34 a may be linear and may be formed inside the outer edge of the ceramic laminate 31.
  • One side of the outer edge of the metal substrate 34 is linear, and is located on the inner side of the outer edge of the ceramic laminate 31, thereby suppressing warping that occurs on one side of the outer edge of the metal substrate 34 between the convex portions 34 a. Can do.
  • the semiconductor element storage package 3 may be provided with a cylindrical fixing member capable of fixing an optical fiber or a translucent member instead of the connector member 35, and the frame member 33 is provided with a fixing member.
  • the semiconductor device 1 capable of inputting and outputting optical signals inside and outside the semiconductor element housing package 3 can be obtained.
  • the ceramic laminate 31 is prepared. If the ceramic laminate 31 is made of, for example, an aluminum oxide sintered body, an organic binder, a plasticizer, a solvent, or the like is added to and mixed with raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. A mixture is obtained. And a some green sheet is produced from a mixture.
  • a high melting point metal powder such as tungsten or molybdenum is prepared, and an organic binder, a plasticizer, a solvent or the like is added to and mixed with the powder to obtain a metal paste. Then, a metallized pattern to be the wiring conductor 36, a metallized pattern to which the lead terminal 37 is bonded, a via conductor, a heat dissipation member 32, and a metallized pattern to be bonded to the metal substrate 34 to the ceramic green sheet to be the ceramic laminate 31, respectively.
  • the ceramic laminate 31 can be prepared by printing and filling in a pattern and arrangement and laminating a plurality of ceramic green sheets.
  • the metal substrate 34 is formed by punching a plate made of an Fe—Ni—Co alloy using a press machine, thereby forming an opening A, a notch C, a first hole B1, and a second hole B2. can do. In this way, the metal substrate 34 can be prepared.
  • the frame 33 is produced by laminating a plurality of ceramic green sheets and forming a through hole as the mounting region R in advance by punching or the like in order to mount the semiconductor element 2. be able to.
  • the frame 33 is laminated on the upper surface of the ceramic laminate 31 so that the through hole surrounds the mounting region R.
  • the frame 33 is provided with a metallized pattern to which the connector member 35 is joined at a predetermined position on the side surface.
  • the ceramic laminate 31 and the frame 33 can be integrally formed by firing simultaneously at a predetermined temperature.
  • the metal substrate 34 is connected to the metallized pattern formed on the lower surface of the prepared ceramic laminate 31 via a brazing material, and at the same time, the metal substrate 34 is formed on the lower surface of the ceramic laminate 31 exposed from the notch C of the metal substrate 34.
  • a plurality of lead terminals 37 are connected to the metallized pattern via a brazing material.
  • the connector member 35 is connected to the metallized pattern formed on the side surface of the prepared frame 33 through a brazing material. Further, a seal ring is connected to the frame 33 via a brazing material. In this manner, the semiconductor element storage package 3 can be manufactured.
  • the semiconductor element 2 is mounted in the mounting region R of the semiconductor element storage package 3.
  • the semiconductor element 2 and the wiring conductor 36 can be electrically connected.
  • the semiconductor device 1 can be manufactured by connecting the lid 4 to the frame 33 via the seal ring in a state in which the airtightness in the frame 33 is maintained.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un conditionnement (3) qui permet de loger un élément semi-conducteur et qui comporte : un corps stratifié en céramique (31) ayant un trou traversant (H) qui pénètre verticalement dans le corps stratifié en céramique ; et un organe dissipateur de chaleur (32), lequel est inséré dans le trou traversant (H) et a une zone de montage (R) dans laquelle doit être monté un élément semi-conducteur (2). En outre, le conditionnement (3) comporte : un corps d'armature (33) qui est disposé sur le corps stratifié en céramique (31) de sorte que le corps d'armature entoure l'organe dissipateur de chaleur (32) ; et un substrat de métal (34), lequel est disposé sur la surface inférieure du corps stratifié en céramique (31) et a une ouverture (A) depuis laquelle la surface inférieure de l'organe dissipateur de chaleur (32) est découverte.
PCT/JP2013/068518 2012-07-27 2013-07-05 Conditionnement permettant de loger un élément semi-conducteur et dispositif semi-conducteur WO2014017273A1 (fr)

Priority Applications (1)

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JP2014526839A JP5873174B2 (ja) 2012-07-27 2013-07-05 半導体素子収納用パッケージおよび半導体装置

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JP2012166508 2012-07-27
JP2012-166508 2012-07-27

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WO2014017273A1 true WO2014017273A1 (fr) 2014-01-30

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WO2018096826A1 (fr) * 2016-11-28 2018-05-31 京セラ株式会社 Boîtier de semi-conducteur et dispositif à semi-conducteur
WO2020045563A1 (fr) * 2018-08-30 2020-03-05 京セラ株式会社 Boîtier à semi-conducteurs et dispositif à semi-conducteur comprenant cette dernière
JP2020126948A (ja) * 2019-02-06 2020-08-20 日亜化学工業株式会社 発光装置、パッケージ、及び、基部
CN112956015A (zh) * 2018-10-30 2021-06-11 京瓷株式会社 电子部件收纳用封装件以及电子装置
JP2023052842A (ja) * 2018-06-05 2023-04-12 日亜化学工業株式会社 発光装置

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JP2004228240A (ja) * 2003-01-21 2004-08-12 Kyocera Corp 発光素子収納用パッケージおよび発光装置
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Publication number Priority date Publication date Assignee Title
JPWO2018096826A1 (ja) * 2016-11-28 2019-10-17 京セラ株式会社 半導体パッケージおよび半導体装置
WO2018096826A1 (fr) * 2016-11-28 2018-05-31 京セラ株式会社 Boîtier de semi-conducteur et dispositif à semi-conducteur
US10943854B2 (en) 2016-11-28 2021-03-09 Kyocera Corporation Semiconductor package and semiconductor apparatus for use with high-frequency signals and improved heat dissipation
JP7364971B2 (ja) 2018-06-05 2023-10-19 日亜化学工業株式会社 発光装置
JP2023052842A (ja) * 2018-06-05 2023-04-12 日亜化学工業株式会社 発光装置
JP2023052858A (ja) * 2018-06-05 2023-04-12 日亜化学工業株式会社 発光装置
JP7364970B2 (ja) 2018-06-05 2023-10-19 日亜化学工業株式会社 発光装置
WO2020045563A1 (fr) * 2018-08-30 2020-03-05 京セラ株式会社 Boîtier à semi-conducteurs et dispositif à semi-conducteur comprenant cette dernière
JPWO2020045563A1 (ja) * 2018-08-30 2021-08-12 京セラ株式会社 半導体パッケージおよびこれを備えた半導体装置
CN112956015A (zh) * 2018-10-30 2021-06-11 京瓷株式会社 电子部件收纳用封装件以及电子装置
CN112956015B (zh) * 2018-10-30 2024-05-24 京瓷株式会社 电子部件收纳用封装件以及电子装置
JP2020126948A (ja) * 2019-02-06 2020-08-20 日亜化学工業株式会社 発光装置、パッケージ、及び、基部
JP7319517B2 (ja) 2019-02-06 2023-08-02 日亜化学工業株式会社 発光装置、パッケージ、及び、基部

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