WO2013168352A1 - 実装構造体とその製造方法 - Google Patents

実装構造体とその製造方法 Download PDF

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Publication number
WO2013168352A1
WO2013168352A1 PCT/JP2013/002354 JP2013002354W WO2013168352A1 WO 2013168352 A1 WO2013168352 A1 WO 2013168352A1 JP 2013002354 W JP2013002354 W JP 2013002354W WO 2013168352 A1 WO2013168352 A1 WO 2013168352A1
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WIPO (PCT)
Prior art keywords
resin
mounting structure
bump
electrode
circuit board
Prior art date
Application number
PCT/JP2013/002354
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English (en)
French (fr)
Inventor
新 岸
宏典 宗像
本村　耕治
弘樹 圓尾
Original Assignee
パナソニック株式会社
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Publication date
Application filed by パナソニック株式会社 filed Critical パナソニック株式会社
Priority to EP13787864.1A priority Critical patent/EP2849216B1/en
Priority to JP2014514363A priority patent/JP6365841B2/ja
Priority to US14/396,297 priority patent/US9795036B2/en
Priority to CN201380018441.8A priority patent/CN104246997B/zh
Priority to KR1020147024643A priority patent/KR101975076B1/ko
Publication of WO2013168352A1 publication Critical patent/WO2013168352A1/ja
Priority to US15/699,570 priority patent/US10412834B2/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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    • H05K2201/10992—Using different connection materials, e.g. different solders, for the same connection
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    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
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    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3485—Applying solder paste, slurry or powder
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a mounting structure in which a semiconductor package component is surface-mounted on a circuit board, and a manufacturing method thereof.
  • the SnAgCu solder paste 601 is printed on the second electrode 104 of the circuit board 105. Then, as shown in FIG. 6B, the bump 103 formed on the first electrode 102 of the semiconductor package 101 is mounted so as to hit the second electrode 104 via the SnAgCu solder paste 601.
  • the semiconductor package 101 having bumps formed on the lower surface thereof is used in mobile devices typified by mobile phone devices, and can withstand a drop impact as a function required for these products. Is required.
  • a countermeasure for example, when the BGA and the circuit board 105 are soldered together, an underfill 603 is provided between the semiconductor package 101 and the circuit board 105 after soldering with the SnAgCu solder 602 as shown in FIG. A method of filling and improving the drop resistance of the joint is used (Patent Document 1).
  • FIG. 7 shows a mounting structure described in Patent Document 2.
  • This mounting structure includes a semiconductor package 101 having a first electrode 102, a circuit board 105 having a second electrode 104, a bump 103 formed on the first electrode 102, and between the bump 103 and the second electrode 104.
  • a bonding member 106 that is disposed and electrically connects the first electrode 102 and the second electrode 104 through the bump 103, and a bonding portion between the bump 103 and the bonding material 106 and the periphery of each bonding member so as to cover the bonding member
  • the reinforcing resins 107 are arranged apart from each other so that the adjacent reinforcing resins 107 do not come into contact with each other.
  • the present invention solves the above-described conventional problems, and in a mounting structure in which a semiconductor package is electrically connected to a circuit board, the drop resistance characteristics of the joint can be improved, and curing when an underfill material is used.
  • An object is to provide an environment-friendly mounting structure that does not require a furnace and a method for manufacturing the same.
  • the mounting structure of the present invention is disposed between a semiconductor package having a first electrode, a circuit board having a second electrode, and a bump formed on the second electrode and the first electrode.
  • a paste in which a solder material and an uncured thermosetting resin are mixed is applied onto the second electrode on the circuit board, and the paste is mixed via the mixed paste.
  • a semiconductor package is mounted on the second electrode of the circuit board via bumps, a reinforcing resin is applied between the outer periphery of the semiconductor package and the circuit board, and the circuit board and the semiconductor package are heated.
  • a paste in which a solder material and an uncured thermosetting resin are mixed is applied onto the second electrode on the circuit board, and the semiconductor package on the circuit board is formed.
  • a reinforcing resin to the peripheral area to be mounted, mounting the semiconductor package on the second electrode of the circuit board via the bumps in the mixed paste, and heating the circuit board and the semiconductor package.
  • the solder material is separated from the thermosetting resin, and the solder material having a melting point lower than the melting point of the bump is used, so that the solder material melts and wets the bump, and then the thermosetting
  • the adhesive resin wets around the solder material and the bump, and then cures the thermosetting resin and the reinforcing resin.
  • the periphery of the bonding material is covered with the first reinforcing resin, and the outer peripheral portion of the semiconductor package and the circuit board are covered with the second reinforcing resin, whereby the drop resistance of the bonded portion is reduced.
  • the characteristics can be enhanced.
  • FIG. 1 Sectional view and (b) plan view of mounting structure in embodiment 1 of the present invention
  • FIG. 1 Sectional view and (b) plan view of mounting structure in embodiment 1 of the present invention
  • FIG. 1 Micrograph of cross section of mounting structure created under conditions of Example 1 of the same embodiment
  • Micrograph of cross section of mounting structure created under conditions of Comparative Example 2 is a manufacturing process diagram in Embodiment 2 of the present invention.
  • Sectional drawing of the mounting structure of Embodiment 3 of this invention The enlarged view of the principal part of the mounting structure of Embodiment 3 of this invention (A)-(d) is sectional drawing of the mounting structure in patent document 1
  • FIGS. 1A and 1B show a mounting structure 100 according to the first embodiment in which a semiconductor package 101 is mounted on a circuit board 105.
  • the first electrode 102 of the semiconductor package 101, the bump 103, the second electrode 104 of the circuit board 105, etc. are shown enlarged compared to the size of the semiconductor package 101.
  • the specific size of the semiconductor package 101 is, for example, ⁇ 11 mm, and the bump 103 is provided with 441 bumps at a pitch of 0.5 mm.
  • the circuit board 105 is made in accordance with the standard of JEDEC Semiconductor Technology Association (EJEDEC Solid Technology Association ⁇ ), has a length of 132mm, a width of 77mm, a thickness of 1.0mm, and the electrode material is copper.
  • the substrate material is a glass epoxy material.
  • FIG. 2A to 2D are views for explaining the manufacturing process of the mounting structure 100.
  • the mixed paste 301 is printed on the second electrode 104 of the circuit board 105.
  • the mixed paste 301 is composed of a solder material having an alloy composition composed of a combination of two or more elements selected from the group consisting of Sn and Bi, In, Ag, and Cu (which later becomes the bonding material 106) It is made of a cured thermosetting resin (which will later become the reinforcing resin 107).
  • the bump 103 formed on the first electrode 102 of the semiconductor package 101 and the mixed paste 301 printed on the circuit board 105 are brought into contact with the semiconductor package 101 on the circuit board 105. Mount.
  • a reinforcing resin 108 as a second reinforcing resin is applied by a dispenser 302 between the outer periphery of the semiconductor package 101 and the surface of the circuit board 105.
  • the mixed paste 301 and the reinforcing resin 108 are heated by using a reflow apparatus to melt the mixed paste 301, and from the mixed paste 301, the bonding material 106 and the first reinforcing resin are used.
  • the reinforcing resin 107 is separated.
  • the first electrode 102 and the second electrode 104 are coupled with the bump 103 and the bonding material 106, and the boundary between the bonding material 106 and the bump 103 is covered with the reinforcing resin 107.
  • the reinforcing resin 108 covers the outer peripheral portion of the semiconductor package 101 and forms a fillet with the circuit board 105.
  • FIG. 1A is an enlarged view of FIG.
  • the bump 103 formed on the first electrode 102 of the semiconductor package 101 and the second electrode 104 of the circuit board 105 are soldered by the melted and solidified bonding material 106 to be electrically conductive. is doing.
  • the bonding material 106 has an alloy composition having a melting point lower than that of the bump 103.
  • the periphery of the second electrode 104 of the circuit board 105 and the bump 103 are covered and joined with a reinforcing resin 107.
  • the outer peripheral portion of the semiconductor package 101 and the circuit board 105 are also joined by the reinforcing resin 108.
  • the reinforcing resin 108 connects between the semiconductor package 101 and the circuit board 105 and forms a fillet around the semiconductor package 101.
  • the reinforcing resin 108 is disposed so as to cover the outer peripheral portion of the semiconductor package 101 and the circuit board 105, but is formed on the reinforcing resin 108 and the first electrode of the semiconductor package 101.
  • the bumps 103 and the reinforcing resin 107 are arranged so as not to come into contact with each other.
  • the bonding material 106 that electrically connects the first electrode 102 and the second electrode 104 through the bump 103 is reinforced with both the reinforcing resin 107 and the reinforcing resin 108, and more specifically, the semiconductor package. 101 and the circuit board 105 are connected, and the fillet is formed of the reinforcing resin 107 around the semiconductor package, so that deformation of the circuit board 105 is suppressed even when subjected to a mechanical impact such as dropping.
  • the drop resistance of the joint can be improved as compared with the case where the joining material 106 is reinforced only with the reinforcing resin 107.
  • the bump 103 is preferably formed from a Sn-based alloy.
  • SnBi series, SnIn series, SnBiIn series, SnAg series, SnCu series, SnAgCu series, SnAgBi series, SnCuBi series, SnAgCuBi series, SnAgIn series, SnCuIn series, SnAgCuIn series, and an alloy consisting of SnAgCuBiIn series Can be used.
  • Sn-based is preferable.
  • Sn-based alloys have a low melting point of 231 ° C., are easily wetted with Cu electrodes, and are easy to make compounds with other alloys. It is also inexpensive and has low toxicity.
  • the bonding material 106 an alloy composition having a melting point lower than that of the bump 103 can be used.
  • both the bump 103 and the bonding material 106 are preferably the same system or the Sn system having the same main component.
  • the reinforcing resins 107 and 108 include a resin component as a main component and a curing agent, and optionally include a viscosity adjusting / thixotropic additive.
  • the reinforcing resin 107 is a thermosetting resin and includes various resins such as an epoxy resin, a urethane resin, an acrylic resin, a polyimide resin, a polyamide resin, a bismaleimide resin, a phenol resin, a polyester resin, a silicone resin, and an oxetane resin. be able to. These may be used alone or in combination of two or more. Of these, epoxy resins are preferred.
  • the reinforcing resin 108 is a thermosetting resin and includes various resins such as an epoxy resin, a urethane resin, an acrylic resin, a polyimide resin, a polyamide resin, a bismaleimide resin, a phenol resin, a polyester resin, a silicone resin, and an oxetane resin. be able to. These may be used alone or in combination of two or more. Of these, epoxy resins are preferred.
  • the reinforcing resin 107 and the reinforcing resin 108 are preferably the same type of resin such as an epoxy resin. Furthermore, it is preferable to change only the reaction start temperature between the two resins by changing only the curing agent to be contained with the same resin component.
  • an epoxy resin selected from the group of bisphenol type epoxy resin, polyfunctional epoxy resin, flexible epoxy resin, brominated epoxy resin, glycidyl ester type epoxy resin and polymer type epoxy resin can be used.
  • bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, phenol novolac type epoxy resin, cresol novolak type epoxy resin, etc. are used. Epoxy resins obtained by modifying these are also used. These may be used alone or in combination of two or more.
  • thermosetting resin As a curing agent used in combination with the thermosetting resin as described above, a compound selected from the group of thiol compounds, amine compounds, polyfunctional phenol compounds, imidazole compounds, and acid anhydride compounds is used. Can do. These may be used alone or in combination of two or more.
  • inorganic or organic additives can be used as the viscosity adjusting / thixotropy imparting additive.
  • silica or alumina is used if it is inorganic, and if it is organic, Derivatives such as amide, polyester and castor oil are used. These may be used alone or in combination of two or more.
  • Example 2 As an example of the present invention, the type of the mixed paste 301 in which the solder material and the uncured thermosetting resin are mixed, the reinforcing resin 108, the reflow temperature is changed, and the effect of the pass / fail of the conduction and the drop resistance characteristics are examined. The results are shown in Table 1 below.
  • the mixed paste 301 in which the solder material and the uncured thermosetting resin are mixed is a bisphenol F type epoxy which is a thermosetting resin as the uncured thermosetting resin with respect to 88 parts by weight of the Sn58Bi solder. Resin (trade name “YDF-7510” manufactured by Nippon Steel Chemical Co., Ltd.) was used.
  • the viscosity modifier / thixotropic agent includes castor oil thixotropic agent (trade name “THIXCIN R” manufactured by Elementis Specialties, Inc.), an imidazole curing agent as a curing agent, and an organic acid having a flux action (“A mixture of 18 parts by weight of kneaded adipic acid (manufactured by Kanto Chemical Co., Ltd.) was used.
  • the imidazole curing agent as a curing agent was adjusted based on the following idea. In the case of preparing an uncured thermosetting resin in which the reaction start temperatures of the epoxy resin and the curing agent are 130 ° C., 140 ° C., and 155 ° C.
  • SnAgCu mixed paste 301 Sn3.0Ag0.5Cu (trade name “M705-GRN360-L60A” manufactured by Senju Metal Industry Co., Ltd.) was used.
  • semiconductor package 101 a semiconductor package mounted with Sn3.0Ag0.5Cu balls was used as the bumps 103 formed on the first electrode.
  • the melting point of Sn58Bi solder is 138 ° C.
  • the melting point of Sn3.0Ag0.5Cu solder is 217 ° C.
  • the reinforcing resin 108 is a bisphenol F type epoxy resin (trade name “YDF-7510” manufactured by Nippon Steel Chemical Co., Ltd.) for a thermosetting resin, and an imidazole curing agent capable of curing at 130 ° C. (Trade name “2MA-OK” manufactured by Shikoku Kasei Kogyo Co., Ltd.), imidazole curing agent capable of curing at 140 ° C.
  • Viscosity adjusting / thixotropy imparting additive is commonly used silica-based thixotropic agent (trade name “AEROSIL RY200” manufactured by Nippon Aerosil Co., Ltd.) did.
  • Each mounting structure was evaluated as follows. As the success or failure of conduction, the presence or absence of conduction was confirmed by a tester after the mounting structure was created. The success / failure of the continuity was indicated as “good” when the resistance value was in the range of 9.8 to 10 ⁇ , and indicated as “x” when the resistance value was out of the range.
  • the drop resistance life was evaluated. Specifically, according to the JEDEC standard, the mounting structure is dropped under the conditions of acceleration, 1500G, drop time, 0.5 seconds, and when the electrical connection is interrupted, the drop life is determined. The number of drops until occurrence was defined as the drop life. As for the judgment of pass / fail of instantaneous interruption, a voltage of 2.0 V was applied to the semiconductor package at the time of dropping, and the case where the voltage dropped by 10% or more was judged as unacceptable. The maximum number of drops at this time was 30.
  • the size of the semiconductor package used here is ⁇ 11 mm
  • the bump 103 formed on the first electrode is 0.5 mm pitch
  • the number of bumps is 441
  • the circuit board 105 is The length is 132 mm
  • the width is 77 mm
  • the thickness is 1.0 mm
  • the electrode material is copper
  • the substrate material is a glass epoxy material.
  • (Evaluation result 1: continuity test) 2 shows the results of evaluating the pass / fail of the mounting structure produced by the mounting method 1 shown in FIG. 2 under the conditions of Examples 1 to 3 and Comparative Examples 1 and 2 in Table 1.
  • Table 1 shows a mixed paste 301 in which the solder composition of the mixed paste 301 in which the solder material and the uncured thermosetting resin are mixed is Sn58Bi (melting point: 138 ° C.), and the solder material and the uncured thermosetting resin are mixed. Study the material characteristics required when creating the mounting structure of the present invention by changing the reaction start temperature of the curing agent of the uncured thermosetting resin included in 301 and the curing agent included in the reinforcing resin 108. Shows the results.
  • the mounting structure 100 was created using the mixed paste 301 in which the solder material and the uncured thermosetting resin were mixed.
  • the solder composition of the mixed paste 301 in which the solder material and the uncured thermosetting resin are mixed is Sn58Bi (solder melting point 138 ° C.), an imidazole curing agent capable of curing at 140 ° C. (trade name “2P4MHZ-PW” Shikoku Kasei Kogyo Co.
  • the mounting structure is made using the same curing agent for the reinforcing resin 108, the resistance value is 9.9 ⁇ , and electrical conductivity can be obtained with a tester. Was confirmed.
  • FIG. 3A is a photomicrograph of a cross section of the mounting structure created under the conditions of Example 1.
  • the semiconductor package 101 includes a first electrode 102, a bump 103 formed on the first electrode, a second electrode 104 formed on the circuit board 105, a bonding material 106, and a reinforcing resin 107.
  • the composition of the bump 103 formed on the first electrode at this time was Sn3.0Ag0.5Cu solder bump having a melting point of 217 ° C. Moreover, the reflow attainment temperature at the time of producing a mounting structure was 160 degreeC.
  • the reaction start temperature of the curing agent of the uncured thermosetting resin and the reinforcing resin is 140 ° C. with respect to the solder melting point of 138 ° C. of the mixed paste 301. High was found to be effective.
  • Example 2 an imidazole-based curing agent (trade name “2P4MHZ-PW” manufactured by Shikoku Kasei Kogyo Co., Ltd.) having a reaction initiation temperature higher than the melting point of Sn58Bi solder of 138 ° C. 155 ° C curing imidazole curing agent (trade name “2PHZ-PW” manufactured by Shikoku Kasei Kogyo Co., Ltd.) Solder material made with uncured thermosetting resin mixed with paste 301 or for reinforcement Even when a mounting structure was prepared using the resin 108, the same result as in Example 1 could be obtained.
  • an imidazole-based curing agent trade name “2P4MHZ-PW” manufactured by Shikoku Kasei Kogyo Co., Ltd.
  • reaction start temperature of the curing agent of the uncured thermosetting resin and the reinforcing resin 108 is higher than the solder melting point of the mixed paste 301 in which the solder material and the uncured thermosetting resin are mixed, This is important in creating the mounting structure of the present invention.
  • the reaction start temperature of the mixed paste 301 in which the solder material and the uncured thermosetting resin are mixed is imidazole capable of curing at 130 ° C. with respect to the conditions of Comparative Example 1 and the melting point 138 ° C. of the solder of the mixed paste 301.
  • Type curing agent (trade name “2MA-OK” manufactured by Shikoku Kasei Kogyo Co., Ltd.)
  • reinforcing resin 108 is an imidazole type curing agent (trade name “2P4MHZ-PW” manufactured by Shikoku Kasei Kogyo Co., Ltd.) capable of curing at 140 ° C.
  • a resistance value of 18 ⁇ was not confirmed to be conductive.
  • the difference from Example 1 is that the reaction start temperature of the curing agent of the uncured thermosetting resin is 130 ° C. and the reaction start temperature of the reinforcing resin 108 is 140 ° C. with respect to the melting point 138 ° C. of the solder. It is.
  • FIG. 3B shows a micrograph of a cross section of the mounting structure created under the conditions of Comparative Example 1.
  • the solder material included in the mixed paste 301 in which the solder material and the uncured thermosetting resin are mixed is around the bump 103 formed on the first electrode.
  • the uncured thermosetting resin wets around the bumps 103 formed on the first electrode and completes curing, so that it is found that conduction cannot be confirmed.
  • the reaction start temperature of the mixed paste 301 in which the solder material and the uncured thermosetting resin are mixed is imidazole based on the conditions of Comparative Example 2 and the melting point 138 ° C. of the solder of the mixed paste 301 corresponding to the curing at 140 ° C.
  • Curing agent (trade name “2P4MHZ-PW” manufactured by Shikoku Kasei Kogyo Co., Ltd.) with reinforcing resin 108 imidazole curing agent (trade name “2MA-OK” manufactured by Shikoku Kasei Kogyo Co., Ltd.) capable of curing at 130 ° C.
  • the difference from Example 1 is that the reaction start temperature of the curing agent of the uncured thermosetting resin is 140 ° C. and the reaction start temperature of the reinforcing resin 107 is 130 ° C. with respect to the melting point 138 ° C. of the solder. It is.
  • FIG. 3C shows a micrograph of a cross section of the mounting structure created under the conditions of Comparative Example 2.
  • an imidazole curing agent (trade name “2MA-OK”) capable of curing at 130 ° C. before the melting point (138 ° C.) of the solder material of the mixed paste 301 in which the solder material and the uncured thermosetting resin are mixed.
  • the reinforcing resin 108 made by Shikoku Kasei Kogyo Co., Ltd. was cured, and the semiconductor package 101 did not sink when the solder was melted. Therefore, the distance between the melted solder and the bump 103 formed on the first electrode is increased, and the melted solder cannot wet the bump 103 formed on the first electrode.
  • the reaction initiation temperature of the uncured thermosetting resin and the reinforcing resin is higher than the melting point of the solder material applied to the circuit board 105. Is preferable.
  • the solder material contained in the mixed paste 301 in which the solder material and the uncured thermosetting resin are mixed was melted and formed on the first electrode of the semiconductor package 101. After the solder material wets the bump 103, the uncured thermosetting resin wets around the bump 103, and the curing of the uncured thermosetting resin and the reinforcing resin starts and is completed.
  • the fact that it is useful as a process for creating a mounting structure can also be seen from the success or failure of conduction.
  • the points for creating the mounting structure of the present invention include the melting point of the bump 103 formed on the first electrode of the semiconductor package 101, the mixed paste 301 in which the solder material and the uncured thermosetting resin are mixed.
  • the relationship between the melting point of the contained solder material and the reaction start temperature of the thermosetting resin and the reinforcing resin 108 contained in the mixed paste 301 in which the solder material and the uncured thermosetting resin are mixed is as follows. desirable.
  • the reaction start temperature of the reinforcing resin 108 and the reaction start temperature of the thermosetting reinforcing resin 107) in the mixed paste 301 should be different from 5 ° C to 15 ° C. The reason is that the reinforcing resin 107 gains time for the solder bumps to wet up the bumps and a time for the reinforcing resin 107 to wet up to cover the periphery thereof. If there is too much temperature difference, heat treatment is required up to a high temperature.
  • the difference between the melting point of the solder material in the mixed paste 301 and the reaction start temperature of the two resins is, for example, 2 ° C. to 17 ° C., preferably 10 ° C. or more.
  • the reason why the temperature difference is necessary is that the solder material is melted and the self-alignment time between the semiconductor package 101 and the circuit board 105 is required.
  • the overall heat treatment temperature will be high as described above.
  • Example 1 is the mounting structure 100 shown in FIG. 1
  • Comparative Example 4 is the mounting structure shown in FIG. 6D
  • Comparative Example 3 is the mounting structure in the state shown in FIG. 6C.
  • the drop resistance test was evaluated based on the drop life. Specifically, according to the JEDEC standard, the mounting structure is dropped under the conditions of acceleration, 1500G, drop time, 0.5 seconds, and when the electrical connection is interrupted, the drop life is determined. The number of drops until occurrence was defined as the drop life. As for the judgment of pass / fail of instantaneous interruption, a voltage of 2.0 V was applied to the semiconductor package at the time of dropping, and the case where the voltage dropped by 10% or more was judged as unacceptable. The maximum number of drops at this time was 30.
  • the size of the semiconductor package used here is ⁇ 11 mm
  • the bump 103 formed on the first electrode is 0.5 mm pitch
  • the number of bumps is 441
  • the circuit board 105 is The length is 132 mm
  • the width is 77 mm
  • the thickness is 1.0 mm
  • the electrode material is copper
  • the substrate material is a glass epoxy material.
  • a mounting structure was created under the conditions of Example 1 and its drop life was evaluated.
  • the reflow attainment temperature at this time is 160 degreeC.
  • the composition of the bump 103 at this time was Sn3.0Ag0.5Cu solder bump having a melting point of 217 ° C.
  • the soldering temperature was 160 ° C. when the mounting structure was prepared, and the solder was prepared using an imidazole curing agent (trade name “2P4MHZ-PW” manufactured by Shikoku Kasei Kogyo Co., Ltd.) capable of curing at 140 ° C.
  • the mixed paste 301 in which the material and the uncured thermosetting resin were mixed was used, and the solder material was SnBi having a melting point of 138 ° C.
  • FIG. 6C includes a semiconductor package 101, a first electrode 102, a circuit board 105, a second electrode 104, and a SnAgCu solder paste 601.
  • the method for creating the mounting structure is as shown in FIG.
  • SnAgCu solder paste 601 is printed on the second electrode 104 of the circuit board 105 (FIG. 6A), and the bumps 103 formed on the first electrode of the semiconductor package 101 are mounted so as to hit ( FIG. 6 (b)).
  • Example 1 the mounting structure (mounting structure shown in FIG. 1) created under the conditions of Example 1 has the same connection reliability as the mounting structure created by soldering and joining the conventional semiconductor package component and the circuit board. It turns out that it is what you give.
  • the present invention provides a circuit between the semiconductor package 101 having the first electrode 102, the circuit board 105 having the second electrode 104, and the bump 103 formed on the second electrode 104 and the first electrode 102.
  • the bonding material 106 for electrically bonding the first electrode 102 and the second electrode 104 through the bump 103, the outer peripheral portion of the semiconductor package 101 disposed on the circuit board 105, and the circuit board 105 are used for reinforcement. It can be said that the mounting structure is expected to be improved in drop-proof characteristics by covering the periphery of each bonding material with a reinforcing resin so as to cover the bonding portion between the bump 103 and the bonding material 106, particularly with the resin.
  • this mounting structure can be used for mobile devices typified by mobile phone devices. Moreover, since the reflow reached temperature at the time of manufacture of this mounting structure is lower than the conventional one, it can be said that it is useful as a countermeasure against environmental problems, particularly global warming.
  • the points for creating the mounting structure of the present invention include the bump 103 formed on the first electrode 102 of the semiconductor package 101 and the mixed paste 301 in which the solder material and the uncured thermosetting resin are mixed.
  • the relationship between the reaction start temperature of the thermosetting resin and the reinforcing resin 108 is preferably the following relationship.
  • the relationship of the melting point of the bump 103 formed on the first electrode 102> the reaction starting temperature of the reinforcing resin 108> the reaction starting temperature of the thermosetting resin contained in the mixed paste 301> the melting point of the solder material is required.
  • the drop-proof property of the mounting structure created under these conditions is the conventional soldering method, that is, the BGA and the circuit board are fixed by filling the reinforcing resin material between the BGA and the circuit board after soldering.
  • the conventional soldering method that is, the BGA and the circuit board are fixed by filling the reinforcing resin material between the BGA and the circuit board after soldering.
  • the mounting structure and the manufacturing method thereof according to the present invention can improve the drop-proof property of the joint portion between the semiconductor package and the circuit board, which is conventionally applied to mobile devices such as mobile phone devices.
  • An SnBi solder material having a lower melting point than the SnAgCu solder that has been used can be used.
  • FIG. 2 In the manufacturing process of the first embodiment shown in FIG. 2, after the semiconductor package 101 is mounted on the circuit board 105 and before the reflow is performed, the reinforcing resin 108 is applied by the dispenser 302.
  • the second embodiment is different in that a reinforcing resin 108 is applied to the circuit board 105 before the semiconductor package 101 is mounted on the circuit board 105. The rest is the same as in the first embodiment.
  • the mixed paste 301 mixed is printed on the second electrode 104 of the circuit board 105. Thereafter, in FIG. 4B, the reinforcing resin 108 is applied to the peripheral region of the circuit board 105 where the semiconductor package 101 is mounted with the dispenser 302.
  • a semiconductor is formed on the circuit board 105 so that the bump 103 formed on the first electrode 102 of the semiconductor package 101 and the mixed paste 301 printed on the circuit board 105 are brought into contact with each other.
  • the package 101 is mounted.
  • the mixed paste 301 and the reinforcing resin 108 are heated using a reflow apparatus to melt the mixed paste 301, and the bonding material 106 and the reinforcing resin 107 are separated from the mixed paste 301. .
  • the first electrode 102 and the second electrode 104 are bonded with the bump 103 and the bonding material 106, and the boundary between the bonding material 106 and the bonding material 106 and the bump 103 is covered with the reinforcing resin 107.
  • the reinforcing resin 108 covers the outer peripheral portion of the semiconductor package 101 and forms a fillet with the circuit board 105.
  • the mounting structure 100 shown in FIG. 1 can also be manufactured by the manufacturing method shown in FIG. (Embodiment 3) 5A and 5B show a mounting structure according to Embodiment 3 of the present invention.
  • FIG. 5A is a cross-sectional view of the semiconductor package 101 of the mounting structure 100 obtained by the mounting method according to Embodiment 2 of the present invention
  • FIG. 5B is an enlarged view of the left end of FIG. 5A.
  • the inner periphery 110 of the reinforcing resin 108 is not in contact with the reinforcing resin 107 or the bump 103.
  • the reinforcing resin 108 is used as a semiconductor package. 101, a bump 103 formed on the first electrode, a reinforcing resin 107 that reinforces a bonding material 106 that electrically bonds the first electrode and the second electrode through the bump, and the circuit board 105.
  • the components of the reinforcing resin 108 and the reinforcing resin 107 are preferably the same.
  • the reinforcing resin 108 an epoxy resin is suitable.
  • the components of the reinforcing resin 108 and the reinforcing resin 107 are same, it is easy to adjust the reaction start temperature of the resin due to the action of heat during reflow, and at the time of curing, the reinforcing resin 108 and the bump Even if the component of the reinforcing resin 107 that reinforces the bonding material 106 that electrically bonds the first electrode and the second electrode is mixed, the physical properties of the cured resin can be easily maintained.
  • the mounting structure 100 according to the third embodiment can be manufactured by increasing the amount of the reinforcing resin 108 in the step shown in FIG. 2C or the step shown in FIG. 4B.
  • the drop resistance characteristics of the mounting structure according to the third embodiment are better than those according to the first embodiment.
  • the present invention it contributes to improving the reliability of mobile devices such as mobile phone devices.

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Abstract

この実装構造体は、回路基板（１０５）の第２電極（１０４）と半導体パッケージ（１０１）のバンプ（１０３）とを接合する接合材料（１０６）の周囲を、第１補強用樹脂（１０７）によって覆っている。さらに、半導体パッケージ（１０１）の外周部分と回路基板（１０５）との間が、第２補強用樹脂（１０８）によって覆われている。接合材料（１０６）が従来よりも融点の低いはんだ材料を使用しても、耐落下特性が良好である。

Description

実装構造体とその製造方法
　本発明は、回路基板に半導体パッケージ部品を表面実装した実装構造体およびその製造方法に関するものである。
　従来のＢＧＡ（Ball Grid Array ）やＣＳＰ（ Chip Scale Package ）のように下面
にバンプを有する半導体パッケージ部品は、図６（ａ）～（ｄ）で説明する工程によって実装されている。
　図６（ａ）では、回路基板１０５の第２電極１０４にＳｎＡｇＣｕはんだペースト６０１が印刷される。そして図６（ｂ）に示すように、半導体パッケージ１０１の第１電極１０２上に形成されたバンプ１０３が、ＳｎＡｇＣｕはんだペースト６０１を介して第２電極１０４にあたるように実装される。
　図６（ｃ）で、リフローをする。リフローすると第２電極１０４に印刷されたＳｎＡｇＣｕはんだペースト６０１と第１電極１０２上に形成されたバンプ１０３のはんだが、溶融し、セルフアライメント性によって半導体パッケージ１０１が適正な位置に移動する。その後、はんだの溶融温度以下に達するとはんだが凝固し、はんだ６０２となり半導体パッケージ１０１の回路基板１０５への電気接続が完了する。このときの、第２電極１０４に印刷されたＳｎＡｇＣｕはんだペースト６０１と半導体パッケージ１０１のバンプ１０３の組成は同一であり、一般的には、ＳｎＡｇＣｕ系のものが用いられる。
　また、ＢＧＡやＣＳＰのように下面にバンプが形成されている半導体パッケージ１０１は、携帯電話装置に代表されるモバイル機器に利用されており、これらの商品に求められる機能として、落下衝撃に耐えることが求められている。この対策として、例えばＢＧＡと回路基板１０５とをはんだ接合する場合には、図６（ｄ）に示すように、ＳｎＡｇＣｕはんだ６０２によるはんだ付け後に半導体パッケージ１０１と回路基板１０５の間にアンダーフィル６０３を充填して、接合部の耐落下特性を高める手法が用いられている（特許文献１）。
　また、近年、環境問題、特に地球温暖化の関心の高まりから、従来用いられてきたＳｎＡｇＣｕ系のはんだよりも融点の低いＳｎＢｉ系はんだ材料の使用が検討され始めている。ところが、低融点はんだを用いたＢＧＡ接続に関する接続信頼性は確立されていない。
　従来の低融点はんだを用いたＢＧＡ接続に関しては、以下のようなものがある。
　例えば、図７は特許文献２に記載された実装構造体である。
　この実装構造体は、第１電極１０２を有する半導体パッケージ１０１と第２電極１０４を有する回路基板１０５と、第１電極１０２上に形成されたバンプ１０３と、バンプ１０３と第２電極１０４の間に配置され、バンプ１０３を通じて第１電極１０２と第２電極１０４とを電気的に接続する接合部材１０６と、バンプ１０３と接合材料１０６との接合部分および接合部材を覆うように個々の接合部材の周囲に配置された補強用樹脂１０７とを備え、それぞれの補強用樹脂１０７が、隣接する補強用樹脂同士が接触しないように、互いに離間して配置されている。
特開平１０－１０１９０６号公報 ＷＯ２０１０／０５０１８５号
　特許文献２のように補強用樹脂１０７を設けたことによって、従来のＳｎＡｇＣｕ系のはんだと同等以上の耐落下特性を得ることが可能である。
　しかしながら、ＳｎＡｇＣｕ系はんだでのはんだ接合後、半導体パッケージ１０１と回路基板の間にアンダーフィル材６０３などを固着させた場合と比較すると、十分な耐落下特性を得ることができない。つまり、携帯電話装置に代表されるモバイル機器などに対して、従来用いられてきたＳｎＡｇＣｕ系のはんだよりも融点の低いＳｎＢｉ系はんだ材料を使用できないことを示している。
　また、アンダーフィル材を用いる場合、一度、ＳｎＡｇＣｕ系はんだでのはんだ接合後、ディスペンサーによるアンダーフィル材の塗布後、アンダーフィル材を硬化させるために硬化炉を用いて、硬化させることが必要である。このため、アンダーフィル材６０３を用いた実装構造体は、環境問題の点から好ましくない。
　本発明は、前記従来の課題を解決するもので、半導体パッケージを回路基板に電気的に接続した実装構造体において、接合部の耐落下特性を高めることができ、アンダーフィル材を用いる場合の硬化炉を必要としない環境に優しい実装構造体およびその製造方法を提供することを目的とする。
　本発明の実装構造体は、第１電極を有する半導体パッケージと、第２電極を有する回路基板と、前記第２電極と前記第１電極上に形成されたバンプとの間に配置され、前記バンプと第２電極とを電気的に接合するはんだを含む接合材料と、前記接合材料の周囲を覆う第１補強用樹脂と、前記回路基板に配置された前記半導体パッケージの外周部分と前記回路基板との間を覆う第２補強用樹脂とを含むことを特徴とする。
　また、本発明の実装構造体の製造方法は、回路基板上の第２電極上に、はんだ材料と未硬化状態の熱硬化性樹脂が混和したペーストを塗布し、前記混和したペーストを介して前記回路基板の第２電極上に、半導体パッケージをバンプを介してマウントし、前記半導体パッケージの外周部と前記回路基板との間にわたって補強用樹脂を塗布し、前記回路基板と前記半導体パッケージとを加熱することにより、前記はんだ材料と前記熱硬化性樹脂とを分離させ、前記バンプの融点より低い融点を有する前記はんだ材料を用いることで、前記はんだ材料が溶融し、前記バンプに濡れ上がり、その後、前記熱硬化性樹脂が前記はんだ材料と前記バンプの周囲に濡れ上がり、その後、前記熱硬化性樹脂と前記補強用樹脂が硬化することを特徴とする。
　また、本発明の実装構造体の製造方法は、回路基板上の第２電極上に、はんだ材料と未硬化状態の熱硬化性樹脂が混和したペーストを塗布し、前記回路基板における前記半導体パッケージがマウントされる周辺領域に補強用樹脂を塗布し、前記混和したペーストに前記半導体パッケージをバンプを介して回路基板の第２電極上にマウントし、前記回路基板と前記半導体パッケージとを加熱することにより、前記はんだ材料と前記熱硬化性樹脂とを分離させ、前記バンプの融点より低い融点を有する前記はんだ材料を用いることで、前記はんだ材料が溶融し、前記バンプに濡れ上がり、その後、前記熱硬化性樹脂が前記はんだ材料と前記バンプの周囲に濡れ上がり、その後、前記熱硬化性樹脂と前記補強用樹脂を硬化させることを特徴とする。
　本発明によれば、前記接合材料の周囲が第１補強用樹脂で覆われており、かつ、半導体パッケージの外周部分と前記回路基板を第２補強用樹脂によって覆うことにより、接合部の耐落下特性を高めることができる。
（ａ）本発明の実施の形態１における実装構造体の断面図と（ｂ）平面図 （ａ）～（ｄ）は同実施の形態の製造工程を説明する図 同実施の形態の実施例１の条件で作成した実装構造体の断面の顕微鏡写真 比較例１の条件で作成した実装構造体の断面の顕微鏡写真 比較例２の条件で作成した実装構造体の断面の顕微鏡写真 （ａ）～（ｄ）は本発明の実施の形態２における製造の工程図 本発明の実施の形態３の実装構造体の断面図 本発明の実施の形態３の実装構造体の要部の拡大図 （ａ）～（ｄ）は特許文献１における実装構造体の断面図 特許文献２における実装構造体の断面図
　以下、本発明の実施の形態について、図面を参照しながら説明する。
　　（実施の形態１）
　図１（ａ）（ｂ）は、回路基板１０５に半導体パッケージ１０１を実装した実施の形態１の実装構造体１００を示す。
　半導体パッケージ１０１の第１電極１０２、バンプ１０３、回路基板１０５の第２電極１０４などは、半導体パッケージ１０１の大きさに比べて拡大して図示されている。半導体パッケージ１０１の具体的な大きさは、例えば、□１１ｍｍであり、バンプ１０３は０．５ｍｍピッチでは４４１個のバンプが設けられている。回路基板１０５は、ＪＥＤＥＣ半導体技術協会（ JEDEC Solid State Technology Association ）規格に準拠して作成されたもので、長手１３２ｍｍ、短手７７ｍｍの大きさで、厚み１．０ｍｍで、電極材料が銅で、基板材質は、ガラスエポキシ材料である。
　図２（ａ）～（ｄ）はこの実装構造体１００の製造工程を説明する図である。
　図２（ａ）では、回路基板１０５の第２電極１０４上にそれぞれ混合ペースト３０１を印刷する。混合ペースト３０１は、ＳｎとＢｉ、Ｉｎ、Ａｇ、およびＣｕの群から選ばれる２種類もしくは、それ以上の元素との組み合わせからなる合金組成のはんだ材料（後に接合材料１０６となるもの）と、未硬化状態の熱硬化性樹脂（後に補強用樹脂１０７となるもの）とからなる。
　図２（ｂ）では、半導体パッケージ１０１の第１電極１０２上に形成されたバンプ１０３と、回路基板１０５上に印刷された混合ペースト３０１とを接触させるように、回路基板１０５上に半導体パッケージ１０１をマウントする。
　図２（ｃ）では、半導体パッケージ１０１の外周と回路基板１０５の表面の間に、第２補強用樹脂としての補強用樹脂１０８をディスペンサー３０２で塗布する。その後、図２（ｄ）では、リフロー装置を用い、混合ペースト３０１と補強用樹脂１０８を加熱して、混合ペースト３０１を溶融し、混合ペースト３０１から、接合材料１０６と第１補強用樹脂としての補強用樹脂１０７とを分離させる。その結果、第１電極１０２と第２電極１０４との間をバンプ１０３と接合材料１０６とで結合し、かつ、接合材料１０６とバンプ１０３との境目を補強用樹脂１０７で覆う。補強用樹脂１０８は、半導体パッケージ１０１の外周部分を覆うとともに、回路基板１０５との間にフィレットを形成する。図１（ａ）は図２（ｄ）の拡大図である。
　この製造方法によると、半導体パッケージ１０１の第１電極１０２上に形成されたバンプ１０３と、回路基板１０５の第２電極１０４の間が、溶融固化した接合材料１０６によってはんだ接続されて電気的に導通している。接合材料１０６は、バンプ１０３より融点が低い合金組成である。回路基板１０５の第２電極１０４の周囲と、バンプ１０３との間は、補強用樹脂１０７で覆って接合されている。また、半導体パッケージ１０１の外周部と、回路基板１０５との間も、補強用樹脂１０８によって接合されている。補強用樹脂１０８は、半導体パッケージ１０１と回路基板１０５の間をつなぐとともに、半導体パッケージ１０１の周囲にフィレットを形成している。
　この実施の形態１では、補強用樹脂１０８は、半導体パッケージ１０１の外周部と回路基板１０５を覆うように配置されているが、補強用樹脂１０８と半導体パッケージ１０１の第１電極上に形成されたバンプ１０３や、補強用樹脂１０７とは接触しないように、配置されている。
　このように、バンプ１０３を通じて第１電極１０２と第２電極１０４を電気的に接続する接合材料１０６を、補強用樹脂１０７と補強用樹脂１０８の両方で補強することによって、さらに詳しくは、半導体パッケージ１０１と回路基板１０５の間をつなぐとともに、半導体パッケージの周囲にフィレットを補強用樹脂１０７で形成しているので、落下などの機械的衝撃を受けた場合においても、回路基板１０５の変形を抑制することができ、図７に示した従来例のように、接合材料１０６を補強用樹脂１０７だけで補強した場合に比べて、接合部の耐落下特性を高めることができる。
　さらに、アンダーフィル材を用いる場合の硬化炉を必要としない環境に優しい製造方法である。また、半導体パッケージ１０１と回路基板１０５の間の全部に補強用樹脂１０８が充填されているのではなく、補強用樹脂１０８が充填されていない空間１０９が形成されているため、図６に示した従来例に較べてアンダーフィル樹脂の使用量が少ない。
　ここで、半導体パッケージ１０１の実装構造体１００の構成および材料仕様になどについて、さらに詳細に説明する。
　バンプ１０３は、Ｓｎ系合金から形成されていることが望ましい。例えば、ＳｎＢｉ系、ＳｎＩｎ系、ＳｎＢｉＩｎ系、ＳｎＡｇ系、ＳｎＣｕ系、ＳｎＡｇＣｕ系、ＳｎＡｇＢｉ系、ＳｎＣｕＢｉ系、ＳｎＡｇＣｕＢｉ系、ＳｎＡｇＩｎ系、ＳｎＣｕＩｎ系、ＳｎＡｇＣｕＩｎ系、およびＳｎＡｇＣｕＢｉＩｎ系からなる群から選ばれる合金組成を用いることができる。
　特に、Ｓｎ系がよい。Ｓｎ系合金は融点が２３１℃と低くく、Ｃｕ電極に濡れ易く、他の合金と化合物を作りやすい。また安価で、毒性も低いためである。
接合材料１０６は、バンプ１０３より融点が低い合金組成を用いることができる。好ましい例としては、バンプ１０３と接合材料１０６ともに、同じ系、または、主成分が同じＳｎ系が好ましい。
補強用樹脂１０７、１０８は、主成分の樹脂成分と、硬化剤とを含み、必要に応じて、粘度調整／チクソ性付与添加剤を含む。
補強用樹脂１０７は、熱硬化性樹脂であり、エポキシ樹脂、ウレタン樹脂、アクリル樹脂、ポリイミド樹脂、ポリアミド樹脂、ビスマレイミド樹脂、フェノール樹脂、ポリエステル樹脂、シリコーン樹脂、オキセタン樹脂など、さまざまな樹脂を含むことができる。これらは、単独で用いてもよく、２種類以上を組み合わせても良い。これらのうちでは、エポキシ樹脂が好適である。
　補強用樹脂１０８は、熱硬化性樹脂であり、エポキシ樹脂、ウレタン樹脂、アクリル樹脂、ポリイミド樹脂、ポリアミド樹脂、ビスマレイミド樹脂、フェノール樹脂、ポリエステル樹脂、シリコーン樹脂、オキセタン樹脂など、さまざまな樹脂を含むことができる。これらは、単独で用いてもよく、２種類以上を組み合わせても良い。これらのうちでは、エポキシ樹脂が好適である。
 補強用樹脂１０７と、補強用樹脂１０８とは、樹脂成分がともにエポキシ系などの同じ系の樹脂がよい。さらに、樹脂成分を同じにして、含有させる硬化剤のみを変えることで反応開始温度のみを２つの樹脂で変えるのが好ましい。
　エポキシ樹脂としては、ビスフェノール型エポキシ樹脂、多官能エポキシ樹脂、可とう性エポキシ樹脂、臭素化エポキシ樹脂、グリシジルエステル型エポキシ樹脂、高分子型エポキシ樹脂の群から選ばれるエポキシ樹脂を用いることができる。例えば、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビフェニル型エポキシ樹脂、ナフタレン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂などが用いられる。これらを変性させたエポキシ樹脂も用いられる。これらは、単独で用いてもよく、２種類以上を組み合わせて用いても良い。
　上記のような熱硬化性樹脂と組み合わせて用いる硬化剤としては、チオール系化合物、アミン系化合物、多官能フェノール系化合物、イミダゾール系化合物、および酸無水物系化合物の群から選ばれる化合物を用いることができる。これらは、単独で用いてもよく、２種類以上を組み合わせてもよい。
　また、必要に応じ、粘度調整／チクソ性付与添加剤として、無機系あるいは、有機系のものを使用でき、例えば、無機系であれば、シリカやアルミナなどが用いられ、有機系であれば、アマイド、ポリエステル系、ひまし油などの誘導体などが用いられる。これらは、単独でもよく、２種類以上を組み合わせてもよい。
　　（実施例）
　本発明の実施例として、はんだ材料と未硬化状態の熱硬化性樹脂が混和した混合ペースト３０１の種類と補強用樹脂１０８、リフロー到達温度を変化させ、導通の合否、耐落下特性の影響を調べ、下記の表１にその結果を示した。
Figure JPOXMLDOC01-appb-T000001
 　　　　　　　　　　　　　　　－　材料　－
　はんだ材料と未硬化状態の熱硬化性樹脂が混和した混合ペースト３０１は、はんだ材料にＳｎ５８Ｂｉはんだ８８重量部に対し、未硬化状態の熱硬化性樹脂として、熱硬化性樹脂であるビスフェノールＦ型エポキシ樹脂（商品名「ＹＤＦ－７５１０」新日鐵化学株式会社製）を用いた。
　粘度調整剤／チクソ付与材には、ひまし油系チクソ剤（商品名「ＴＨＩＸＣＩＮ　Ｒ」エレメンティスジャパン（ElementisSpecialties, Inc.）製）と硬化剤であるイミダゾール系硬化剤、フラックス作用を有する有機酸（「アジピン酸」関東化学株式会社製）を練り込んだものを１８重量部混ぜたものを使用した。このとき、硬化剤であるイミダゾール系硬化剤に関しては、以下の考えで調整した。はんだ材料の融点が１３８℃のＳｎ５８Ｂｉに対して、エポキシ樹脂と硬化剤の反応開始温度が１３０℃、１４０℃、１５５℃となる未硬化状態の熱硬化性樹脂を作成する場合において、それぞれ、２，４－ジアミノ－６－（２’－メチルイミダゾリル－（１’））－エチル－ｓ－トリアジンイソシアヌル酸付加物（商品名「２ＭＡ－ＯＫ」四国化成工業株式会社製）、２－フェニル－４－メチル－５－ヒドロキシメチルイミダゾール（商品名「２Ｐ４ＭＨＺ－ＰＷ」四国化成工業株式会社製）、２－フェニル－４，５－ジヒドロキシメチルイミダゾール（商品名「２ＰＨＺ－ＰＷ」四国化成工業株式会社製）を使用した。
　ＳｎＡｇＣｕ混合ペースト３０１には、Ｓｎ３．０Ａｇ０．５Ｃｕ（商品名「Ｍ７０５－ＧＲＮ３６０－Ｌ６０Ａ」千住金属工業株式会社製）を用いた。
　半導体パッケージ１０１には、第１電極上に形成されたバンプ１０３として、Ｓｎ３．０Ａｇ０．５Ｃｕボール搭載の半導体パッケージを用いた。
　Ｓｎ５８Ｂｉはんだの融点は、１３８℃であり、Ｓｎ３．０Ａｇ０．５Ｃｕはんだの融点は、２１７℃である。
　補強用樹脂１０８には、熱硬化性樹脂には、ビスフェノールＦ型エポキシ樹脂（商品名「ＹＤＦ－７５１０」新日鐵化学株式会社製）、硬化剤には、１３０℃硬化対応のイミダゾール系硬化剤（商品名「２ＭＡ－ＯＫ」四国化成工業株式会社製）、１４０℃硬化対応のイミダゾール系硬化剤（商品名「２Ｐ４ＭＨＺ－ＰＷ」四国化成工業株式会社製）、または、１５５℃硬化対応のイミダゾール系硬化剤（商品名「２ＰＨＺ－ＰＷ」四国化成工業株式会社製）粘度調整／チクソ性付与添加剤には、シリカ系チクソ剤（商品名「AEROSIL RY200」日本アエロジル株式会社製）を共通して使用した。
　　（評価）
　それぞれの実装構造体の評価は、以下のように行った。
　導通の合否として、実装構造体作成後、テスターにて、導通の有無を確認した。導通の合否は、抵抗値が９．８～１０Ωの範囲である場合を合格として、○で表記し、範囲外である場合を、×と表記した。
　耐落下試験としては、耐落下寿命で評価した。具体的には、ＪＥＤＥＣ規格に準拠し、加速度、１５００Ｇ、落下時間、０．５秒の条件で実装構造体を落下させ、電気的接続に瞬断が生じたときを耐落下寿命とし、瞬断発生までの落下回数を耐落下寿命とした。瞬断の合否判定としては、落下時に、半導体パッケージに２．０Ｖの電圧を印加し、電圧が１０％以上低下したときを不合格と判断した。また、このときの最高落下回数を３０回とした。
　なお、ここで用いた半導体パッケージの大きさは、□１１ｍｍサイズであり、第１電極上に形成されたバンプ１０３は、０．５ｍｍピッチで、バンプ数は４４１個であり、回路基板１０５は、長手１３２ｍｍ、短手７７ｍｍの大きさで、厚み１．０ｍｍで、電極材料が銅で、基板材質は、ガラスエポキシ材料である。
　　　　　　　　　　　　（評価結果１：導通試験）
　表１の実施例１～３、比較例１～２の条件で、図２に示した実装方法１で作成した実装構造体の導通の合否について評価した結果を示す。
　表１は、はんだ材と未硬化状態の熱硬化性樹脂が混和した混合ペースト３０１のはんだ組成をＳｎ５８Ｂｉ（融点：１３８℃）とし、はんだ材と未硬化状態の熱硬化性樹脂が混和した混合ペースト３０１に含まれる未硬化状態の熱硬化性樹脂の硬化剤と補強用樹脂１０８に含まれる硬化剤の反応開始温度を変化させ、本発明の実装構造体を作成する際に求められる材料特性について検討した結果を示している。
　実施例１の条件は、はんだ材と未硬化状態の熱硬化性樹脂が混和した混合ペースト３０１を用いて、実装構造体１００を作成した。
　はんだ材と未硬化状態の熱硬化性樹脂が混和した混合ペースト３０１のはんだ組成がＳｎ５８Ｂｉ（はんだ融点１３８℃）、１４０℃硬化対応のイミダゾール系硬化剤（商品名「２Ｐ４ＭＨＺ－ＰＷ」四国化成工業株式会社製）を用いて作成されたもので、補強用樹脂１０８の硬化剤にも同様のものを用いて実装構造体を作成したところ、抵抗値が、９．９Ωとテスターにて導通がとれることが確認された。
　図３Ａは、実施例１の条件で作成した実装構造体の断面の顕微鏡写真である。半導体パッケージ１０１、第１電極１０２、第１電極上に形成されたバンプ１０３、回路基板１０５上に形成された第２電極１０４、接合材料１０６、補強用樹脂１０７から構成されている。
　このときの、第１電極上に形成されたバンプ１０３の組成は、融点が２１７℃のＳｎ３．０Ａｇ０．５Ｃｕはんだバンプとした。また、実装構造体を作成する際のリフロー到達温度は、１６０℃とした。
　その結果、接合材料１０６が、バンプ１０３の周囲に破線部まで濡れ上がっており、更にその周囲を補強用樹脂１０７が破線部までフィレット形状を形成していることが確認された。
　これらの結果より、図３Ａの構造体の作成には、混合ペースト３０１のはんだ融点の１３８℃に対し、未硬化状態の熱硬化性樹脂と補強用樹脂の硬化剤の反応開始温度が１４０℃と高いことが有効であることがわかった。
　また、実施例２、３の条件、Ｓｎ５８Ｂｉはんだの融点１３８℃融点よりも反応開始温度が高い１４０℃硬化対応のイミダゾール系硬化剤（商品名「２Ｐ４ＭＨＺ－ＰＷ」四国化成工業株式会社製）、または、１５５℃硬化対応のイミダゾール系硬化剤（商品名「２ＰＨＺ－ＰＷ」四国化成工業株式会社製）を用いた作成したはんだ材料と未硬化状態の熱硬化性樹脂が混和した混合ペースト３０１や補強用樹脂１０８を用いて、実装構造体を作成した場合においても、実施例１と同様の結果を得ることができた。
　つまり、はんだ材と未硬化状態の熱硬化性樹脂が混和した混合ペースト３０１のはんだ融点より、未硬化状態の熱硬化性樹脂と補強用樹脂１０８の硬化剤の反応開始温度が、高いことが、本発明の実装構造体を作成するなかで重要となる。
　次に、比較例１の条件、混合ペースト３０１のはんだの融点１３８℃に対し、はんだ材料と未硬化状態の熱硬化性樹脂が混和した混合ペースト３０１の反応開始温度が、１３０℃硬化対応のイミダゾール系硬化剤（商品名「２ＭＡ－ＯＫ」四国化成工業株式会社製）で、補強用樹脂１０８が１４０℃硬化対応のイミダゾール系硬化剤（商品名「２Ｐ４ＭＨＺ－ＰＷ」四国化成工業株式会社製）のものを用いて実装構造体を作成したところ、抵抗値が、１８Ωと導通の確認が得られなかった。
　つまり、実施例１との違いは、はんだの融点１３８℃に対して、未硬化状態の熱硬化性樹脂の硬化剤の反応開始温度が１３０℃、補強用樹脂１０８の反応開始温度が、１４０℃である。
　比較例１の条件で作成した実装構造体の断面の顕微鏡写真を図３Ｂに示す。これを観察したところ、補強用樹脂１０７が、バンプ１０３の周囲に破線部まで濡れ上がっているのが確認されたものの、接合材料１０６がバンプ１０３の周囲にまで濡れ上がらず、破線部の状態で留まっているのが確認された。
　つまり、比較例１の条件で実装構造体を作成すると、はんだ材料と未硬化状態の熱硬化性樹脂が混和した混合ペースト３０１に含まれるはんだ材料が第１電極上に形成されたバンプ１０３の周囲に濡れ上がる前に、未硬化状態の熱硬化性樹脂が第１電極上に形成されたバンプ１０３の周囲に濡れ上がり硬化が完了するために導通の確認が得られないことがわかった。
　また、比較例２の条件、混合ペースト３０１のはんだの融点１３８℃に対し、はんだ材料と未硬化状態の熱硬化性樹脂が混和した混合ペースト３０１の反応開始温度が、１４０℃硬化対応のイミダゾール系硬化剤（商品名「２Ｐ４ＭＨＺ－ＰＷ」四国化成工業株式会社製）で、補強用樹脂１０８が１３０℃硬化対応のイミダゾール系硬化剤（商品名「２ＭＡ－ＯＫ」四国化成工業株式会社製）のものを用いて実装構造体を作成したところ、抵抗値が、２３Ωと、導通の確認は得られなかった。
　つまり、実施例１との違いは、はんだの融点１３８℃に対して、未硬化状態の熱硬化性樹脂の硬化剤の反応開始温度が１４０℃、補強用樹脂１０７の反応開始温度が、１３０℃である。
　比較例２の条件で作成した実装構造体の断面の顕微鏡写真を図３Ｃに示す。これを観察したところ、バンプ１０３の周囲に、補強用樹脂１０８は濡れ上がっているものの、接合材料１０６が濡れ上がっていないことが確認された。
　これは、はんだ材料と未硬化状態の熱硬化性樹脂が混和した混合ペースト３０１のはんだ材の融点（１３８℃）よりも先に、１３０℃硬化対応のイミダゾール系硬化剤（商品名「２ＭＡ－ＯＫ」四国化成工業株式会社製）からなる補強用樹脂１０８が硬化してしまい、はんだ溶融時に、半導体パッケージ１０１が沈み込まなかった。そのため、溶融したはんだと、第１電極上に形成されたバンプ１０３間の距離が長くなり、溶融したはんだが、第１電極上に形成されたバンプ１０３に濡れ上がることができなかった。
　　　　　　　　　　　－　導通試験の結果まとめ　－
　これらの結果より、本発明の実装構造体を作成する場合において、回路基板１０５に塗布されるはんだ材料の融点に対し、未硬化状態の熱硬化性樹脂および補強用樹脂の反応開始温度が高いことが好ましいことがわかる。
　本発明の実装構造体の作成プロセスとしては、はんだ材料と未硬化状態の熱硬化樹脂が混和した混合ペースト３０１に含まれるはんだ材料が溶融し、半導体パッケージの１０１の第１電極上に形成されたバンプ１０３にはんだ材料が濡れ上がった後、その周囲に未硬化状態の熱硬化樹脂が濡れ上がり、未硬化状態の熱硬化樹脂と補強用樹脂の硬化が開始し、完了することが、本発明の実装構造体を作成するプロセスとして有用であることが、導通の合否からもわかる。
　つまり、本発明の実装構造体を作成するポイントとしては、半導体パッケージ１０１の第１電極上に形成されたバンプ１０３の融点、はんだ材料と未硬化状態の熱硬化性樹脂が混和した混合ペースト３０１に含まれるはんだ材の融点とはんだ材料と未硬化状態の熱硬化性樹脂が混和した混合ペースト３０１に含まれる熱硬化性樹脂と補強用樹脂１０８の反応開始温度の関係が下記の関係であることが望ましい。
　第１電極上に形成されたバンプ１０３の融点 ＞ 補強用樹脂１０８が硬化を開始する反応開始温度 ≧ 混合ペースト３０１中の熱硬化性樹脂の反応開始温度 ＞ 混合ペースト３０１中のはんだ材の融点の関係が必要である。
　補強用樹脂１０８の反応開始温度と混合ペースト３０１中の熱硬化性の補強用樹脂１０７）の反応開始温度は、５℃から１５℃の差があった方がよい。
　その理由は、補強用樹脂１０７が、はんだのバンプへの濡れ上がるための時間と、その周囲を覆うための補強用樹脂１０７の濡れ上がりのための時間を稼ぐためである。温度差がありすぎると、高い温度まで熱処理が必要となる。
　混合ペースト３０１中のはんだ材料の融点と、２つの樹脂の反応開始温度との差は、例えば、２℃から１７℃で、好ましくは、１０℃以上がよい。
　温度差が必要な理由は、はんだ材料が溶けて、半導体パッケージ１０１と前記回路基板１０５とのセルフアライメントの時間が必要であることです。
　一方、温度差がありすぎると、上記同様全体の熱処理温度が高くなってしまうことである。
　　　　　　　　　　　　　　－　落下試験　－
　実施例１と下記の表２に示す比較例３～４について、実装構造体の耐落下特性の合否を評価した。
Figure JPOXMLDOC01-appb-T000002
 　実施例１は図１に示した実装構造体１００、比較例４は図６（ｄ）に示した実装構造体、比較例３は図６（ｃ）に示す状態の実装構造体である。
　耐落下試験は、耐落下寿命で評価した。具体的には、ＪＥＤＥＣ規格に準拠し、加速度、１５００Ｇ、落下時間、０．５秒の条件で実装構造体を落下させ、電気的接続に瞬断が生じたときを耐落下寿命とし、瞬断発生までの落下回数を耐落下寿命とした。瞬断の合否判定としては、落下時に、半導体パッケージに２．０Ｖの電圧を印加し、電圧が１０％以上低下したときを不合格と判断した。また、このときの最高落下回数を３０回とした。
　なお、ここで用いた半導体パッケージの大きさは、□１１ｍｍサイズであり、第１電極上に形成されたバンプ１０３は、０．５ｍｍピッチで、バンプ数は４４１個であり、回路基板１０５は、長手１３２ｍｍ、短手７７ｍｍの大きさで、厚み１．０ｍｍで、電極材料が銅で、基板材質はガラスエポキシ材料である。
　実施例１の条件にて実装構造体を作成し、耐落下寿命を評価したところ、３０回を示した。なお、このときのリフロー到達温度は、１６０℃である。
　このときのバンプ１０３の組成は、融点が２１７℃のＳｎ３．０Ａｇ０．５Ｃｕはんだバンプとした。また、実装構造体を作成する際のリフロー到達温度は、１６０℃とし、１４０℃硬化対応のイミダゾール系硬化剤（商品名「２Ｐ４ＭＨＺ－ＰＷ」四国化成工業株式会社製）を用いて作成されたはんだ材と未硬化状態の熱硬化性樹脂とが混和した混合ペースト３０１を用い、はんだ材は、融点が１３８℃のＳｎＢｉとした。
　比較例３において、図６（ｃ）に示す実装構造体を作成し、評価した。
　図６（ｃ）は、半導体パッケージ１０１、第１電極１０２、回路基板１０５、第２電極１０４、ＳｎＡｇＣｕはんだペースト６０１から構成されている。
　実装構造体の作成方法は、図６に示す通りである。図６では、回路基板１０５の第２電極１０４にＳｎＡｇＣｕはんだペースト６０１が印刷され（図６（ａ））、半導体パッケージ１０１の第１電極上に形成されたバンプ１０３があたるように実装される（図６（ｂ））。
　図６（ｃ）で、リフローをする。リフローすると第２電極１０４に印刷されたＳｎＡｇＣｕはんだペースト６０１と第１電極上に形成されたバンプ１０３のはんだが、溶融し、セルフアライメント性によって半導体パッケージ部品が適正な位置に移動する。その後、はんだの溶融温度以下に達すると、はんだを凝固させ、半導体パッケージ１０１の回路基板１０５への電気接続が完了する。このときの、第２電極１０４に印刷されたＳｎＡｇＣｕはんだペースト６０１と半導体パッケージ１０１のバンプ１０３の組成は同一である。また、このときのリフロー到達温度は、２５０℃である。
　この実装構造体（図６（ｃ））について評価したところ、耐落下寿命が５回であり、実施例４の耐落下寿命に対して劣ることがわかる。
　比較例４の条件で作成した図６（ｄ）のアンダーフィル６０３を用いた実装構造体を作成し、耐落下特性を評価した。この実装構造体（図６（ｄ））は、比較例３の方法にて作成した実装構造体（図６（ｃ））に、ディスペンサーにて、アンダーフィル６０３を塗布後、加熱にて硬化させたものである。
　この実装構造体（図６（ｄ））について評価したころ、耐落下寿命が３０回（最大落下回数）であり、実施例６と同等の接続信頼性が得られる実装構造体であることがわかった。
　　　　　　　　　　－　落下試験の結果のまとめ　－
　つまり、実施例１の条件で作成した実装構造体（図１に示す実装構造体）が、従来の半導体パッケージ部品と回路基板をはんだ付け接合して作成した実装構造体と同等の接続信頼性を与えるものであることがわかる。
　上述のように、本発明は、第１電極１０２を有する半導体パッケージ１０１と、第２電極１０４を有する回路基板１０５と、第２電極１０４と第１電極１０２上に形成されたバンプ１０３との間に配置され、バンプ１０３を通じて第１電極１０２と第２電極１０４とを電気的に接合する接合材料１０６と、前記回路基板１０５に配置された半導体パッケージ１０１の外周部分と前記回路基板１０５が補強用樹脂によって覆う、特にバンプ１０３と接合材料１０６との接合部を覆うように、個々の接合材料の周囲を補強用樹脂で覆うことにより、耐落下特性の向上が見込まれる実装構造体と言える。つまり、携帯電話装置に代表されるモバイル機器に利用可能ということである。また、この実装構造体の製造時の、リフロー到達温度が従来のものより低いことから、環境問題、特に地球温暖化の対策として有用であると言える。
　つまり、本発明の実装構造体を作成するポイントとしては、半導体パッケージ１０１の第１電極１０２上に形成されたバンプ１０３、はんだ材料と未硬化状態の熱硬化性樹脂が混和した混合ペースト３０１に含まれる熱硬化性樹脂と補強用樹脂１０８の反応開始温度の関係が下記の関係であることが望ましい。
　第１電極１０２上に形成されたバンプ１０３の融点 ＞ 補強用樹脂１０８の反応開始温度 ≧ 混合ペースト３０１に含まれる熱硬化性樹脂の反応開始温度 ＞ はんだ材料の融点という関係が必要である。
　また、この条件にて作成した実装構造体の耐落下特性は、従来のはんだ付け方法、つまり、はんだ付け後にＢＧＡと回路基板の間に補強樹脂材料を充填してＢＧＡと回路基板とを固着させることにより、接合部の耐落下特性を高める手法が用いられている（図６（ｄ））（特許文献１）と同等であることがわかる。
　このように、本発明の実装構造体およびその製造方法は、半導体パッケージと回路基板との接合部の耐落下特性を高めることができ、携帯電話装置に代表されるモバイル機器などに対して、従来用いられてきたＳｎＡｇＣｕ系のはんだよりも融点の低いＳｎＢｉ系はんだ材料を使用可能にすることができる。
　　（実施の形態２）
　図４（ａ）～（ｄ）は、実装構造体１００の別の製造方法を示す。
　図２に示した実施の形態１の製造工程では、回路基板１０５上に半導体パッケージ１０１をマウントした後で、リフローを実施する前のタイミングに、ディスペンサー３０２によって補強用樹脂１０８を塗布したが、この実施の形態２では、半導体パッケージ１０１を回路基板１０５上にマウントする前に、補強用樹脂１０８を回路基板１０５に塗布している点が異なっている。その他は実施の形態１と同じである。
　図４（ａ）では、回路基板１０５の第２電極１０４上に、混和した混合ペースト３０１を印刷する。
　その後、図４（ｂ）では、回路基板１０５における半導体パッケージ１０１がマウントされる周辺領域に補強用樹脂１０８をディスペンサー３０２で塗布する。
　その後、図４（ｃ）では、半導体パッケージ１０１の第１電極１０２上に形成されたバンプ１０３と、回路基板１０５上に印刷された混合ペースト３０１とを接触させるように、回路基板１０５上に半導体パッケージ１０１をマウントする。
　その後、図４（ｄ）では、リフロー装置を用い、混合ペースト３０１と補強用樹脂１０８を加熱して、混合ペースト３０１を溶融し、混合ペースト３０１から接合材料１０６と補強用樹脂１０７とを分離させる。結果、第１電極１０２と第２電極１０４との間をバンプ１０３と接合材料１０６とで結合し、かつ、接合材料１０６と、接合材料１０６とバンプ１０３との境目を補強用樹脂１０７で覆う。補強用樹脂１０８は、半導体パッケージ１０１の外周部分を覆うとともに、回路基板１０５との間にフィレットを形成する。
　このように、図４に示した製造方法でも図１に示した実装構造体１００を製造できる。
　　（実施の形態３）
　図５Ａと図５Ｂは本発明の実施の形態３の実装構造体を示す。
　図５Ａは、本発明の実施の形態２における実装方法によって得られる実装構造体１００の半導体パッケージ１０１の断面図であり、また、図５Ｂは、図５Ａの左端を拡大したものである。
　実施の形態１の実装構造体１００は、補強用樹脂１０８の内周１１０が補強用樹脂１０７やバンプ１０３に接触していなかったが、この実施の形態３では、補強用樹脂１０８が、半導体パッケージ１０１、第１電極上に形成されたバンプ１０３、バンプを通じて第１電極と第２電極を電気的に接合する接合材料１０６を補強する補強用樹脂１０７と回路基板１０５と接している。補強用樹脂１０８と補強用樹脂１０７の成分が同じであることが好適である。
　補強用樹脂１０８としてはエポキシ樹脂が好適である。補強用樹脂１０８と補強用樹脂１０７の成分を同じにすることにより、リフロー時の熱の作用による樹脂の反応開始温度を調整することが容易であり、また、硬化時に、補強用樹脂１０８とバンプを通じて第１電極と第２電極を電気的に接合する接合材料１０６を補強する補強用樹脂１０７の成分が混和したとしても、硬化物としての樹脂の物性を保持しやすい。
　この実施の形態３の実装構造体１００は、図２（ｃ）に示した工程または図４（ｂ）に示した工程において、補強用樹脂１０８の量を増やすことで製造できる。
　この実施の形態３の実装構造体の耐落下特性は実施の形態１の場合よりも良好である。
　本発明によると、携帯電話装置に代表されるモバイル機器などの信頼性の向上に寄与する。
　１００　実装構造体
　１０１　半導体パッケージ
　１０２　第１電極
　１０３　バンプ
　１０４　第２電極
　１０５　回路基板
　１０６　接合材料
　１０７　補強用樹脂（第１補強用樹脂）
　１０８　補強用樹脂（第２補強用樹脂）
　３０１　混合ペースト
　３０２　ディスペンサー

Claims (11)

  1. 　第１電極を有する半導体パッケージと、
    　第２電極を有する回路基板と、
    　前記第２電極と前記第１電極上に形成されたバンプとの間に配置され、前記バンプと第２電極とを電気的に接合するはんだを含む接合材料と、
    　前記接合材料の周囲を覆う第１補強用樹脂と、
    　前記回路基板に配置された半導体パッケージの外周部分と前記回路基板との間を覆う第２補強用樹脂とを含む
    実装構造体。
  2. 　前記第１補強用樹脂と前記第２補強用樹脂とが接触していることを特徴とする
    請求項１の実装構造体。
  3. 　前記第１補強用樹脂と第２補強用樹脂との樹脂成分が同じ組成で、含まれる硬化剤が異なることを特徴とする
    請求項１記載の実装構造体。
  4. 　前記バンプの合金組成と、前記接合材料とが、Ｓｎ系材料であることを特徴とする
    請求項１記載の実装構造体。
  5. 　前記バンプの合金組成がＳｎＡｇＣｕ系のはんだで形成され、前記接合材料が、ＳｎＢｉ系であることを特徴とする
    請求項１記載の実装構造体。
  6. 　前記バンプの融点 ＞ 前記第２補強用樹脂の反応開始温度 ≧ 前記第１補強用樹脂の反応開始温度 ＞ 前記接合材料の融点
    である
    請求項１記載の実装構造体。
  7. 前記第１補強用樹脂の反応開始温度と前記第２補強用樹脂の反応開始温度とは、５℃から１５℃の差がある
    請求項１記載の実装構造体。
  8. 前記第１補強用樹脂の反応開始温度と前記第２補強用樹脂の反応開始温度は、前記接合材料の融点との温度差が２℃から１７℃である
    請求項１記載の実装構造体。
  9. 　回路基板上の第２電極上に、はんだ材料と未硬化状態の熱硬化性樹脂が混和したペーストを塗布し、
    　前記混和したペーストを介して前記回路基板の第２電極上に、半導体パッケージをバンプを介してマウントし、
    　前記半導体パッケージの外周部と前記回路基板との間にわたって補強用樹脂を塗布し、
    　前記回路基板と前記半導体パッケージとを加熱することにより、前記接合材料と前記熱硬化性樹脂とを分離させ、
    　前記バンプの融点より低い融点を有する前記接合材料を用いることで、前記接合材料が溶融し、前記バンプに濡れ上がり、その後、前記熱硬化性樹脂が前記接合材料と前記バンプの周囲に濡れ上がり、その後、前記熱硬化性樹脂と前記補強用樹脂が硬化する
    実装構造体の製造方法。
  10. 　回路基板上の第２電極上に、接合材料と未硬化状態の熱硬化性樹脂が混和したペーストを塗布し、
    　前記回路基板における前記半導体パッケージがマウントされる周辺領域に補強用樹脂を塗布し、
    　前記混和したペーストに前記半導体パッケージをバンプを介して回路基板の第２電極上にマウントし、
    　前記回路基板と前記半導体パッケージとを加熱することにより、前記接合材料と前記熱硬化性樹脂とを分離させ、
    　前記バンプの融点より低い融点を有する前記接合材料を用いることで、前記接合材料が溶融し、前記バンプに濡れ上がり、その後、前記熱硬化性樹脂が前記接合材料と前記バンプの周囲に濡れ上がり、その後、前記熱硬化性樹脂と前記補強用樹脂を硬化させる
    実装構造体の製造方法。
  11. 　前記熱硬化性樹脂と前記補強用樹脂の反応開始温度が、前記接合材料の融点以上、かつ、前記バンプの融点以下であることを特徴とする
    請求項９または請求項１０記載の実装構造体の製造方法。
PCT/JP2013/002354 2012-05-10 2013-04-05 実装構造体とその製造方法 WO2013168352A1 (ja)

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