TWI582915B - Mounting structure and manufacturing method thereof - Google Patents

Mounting structure and manufacturing method thereof Download PDF

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Publication number
TWI582915B
TWI582915B TW102113676A TW102113676A TWI582915B TW I582915 B TWI582915 B TW I582915B TW 102113676 A TW102113676 A TW 102113676A TW 102113676 A TW102113676 A TW 102113676A TW I582915 B TWI582915 B TW I582915B
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Taiwan
Prior art keywords
reinforcing resin
electrode
resin
mounting structure
bump
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TW102113676A
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English (en)
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TW201401450A (zh
Inventor
岸新
宗像宏典
本村耕治
圓尾弘樹
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松下知識產權經營股份有限公司
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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Description

安裝構造體及其製造方法
本發明係關於一種於電路基板上表面安裝有半導體封裝零件之安裝構造體及其製造方法。
如先前之BGA(Ball Grid Array，球柵陣列)或CSP(Chip Scale Package，晶片尺寸封裝)般，下表面具有凸塊之半導體封裝零件係利用圖6(a)~(d)所說明之步驟進行安裝。
於圖6(a)中，於電路基板105之第2電極104上印刷有SnAgCu焊料膏601。而且，如圖6(b)所示，半導體封裝101之形成於第1電極102上之凸塊103係以經由SnAgCu焊料膏601而觸及第2電極104之方式安裝。
圖6(c)係進行回焊。若進行回焊，則印刷於第2電極104之SnAgCu焊料膏601及形成於第1電極102上之凸塊103之焊料熔融，半導體封裝101因自對準性而移動至適當位置。其後，若達到焊料之熔融溫度以下，則焊料凝固成為焊料602，半導體封裝101對電路基板105之電性連接完成。此時，印刷於第2電極104之SnAgCu焊料膏601及半導體封裝101之凸塊103之組成相同，一般而言，使用SnAgCu系者。
又，如BGA或CSP般於下表面形成有凸塊之半導體封裝101係用於以行動電話裝置為代表之移動機器，且作為該等商品所需求之功能，要求耐受墜落衝擊。作為其對策，例如使用如下方法：於焊接 BGA與電路基板105之情形時，如圖6(d)所示，在SnAgCu焊料602之焊接後，對半導體封裝101與電路基板105之間填充底膠603，從而提昇接合部之抗墜落特性(專利文獻1)。
又，近年來，由於對環境問題、尤其全球暖化之關心之提昇，而開始研究熔點較先前一直使用之SnAgCu系焊料低之SnBi系焊料材料之使用。然而，與使用低熔點焊料之BGA連接相關之連接可靠性尚未確立。
關於使用先前之低熔點焊料之BGA連接，存在有如下所示者。
例如，圖7係專利文獻2所記載之安裝構造體。
該安裝構造體包含：半導體封裝101，其含有第1電極102；電路基板105，其含有第2電極104；凸塊103，其形成於第1電極102上；接合構件106，其配置於凸塊103與第2電極104間，且通過凸塊103將第1電極102與第2電極104電性連接；及加強用樹脂107，其以覆蓋凸塊103與接合材料106之接合部分及接合構件之方式，配置於各個接合構件周圍；且各個加強用樹脂107係以鄰接之加強用樹脂彼此不接觸之方式相互隔開地進行配置。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開平10-101906號公報
[專利文獻2]WO2010/050185號
可藉由如專利文獻2般設置加強用樹脂107，而獲得與先前之SnAgCu系焊料同等以上之抗墜落特性。
然而，若於利用SnAgCu系焊料之焊接後，與使底膠材603等固著於半導體封裝101與電路基板之間之情形比較，則無法獲得充分之 抗墜落特性。即，呈現無法對以行動電話裝置為代表之移動機器等，使用熔點較先前一直使用之SnAgCu系焊料低之SnBi系焊料之情形。
又，於使用底膠材之情形時，曾經在利用SnAgCu系焊料之焊接後，由點膠機進行之底膠材之塗佈後，為使底膠材硬化，而必需使用硬化爐使之硬化。因此，使用底膠材603之安裝構造體就環境問題之方面而言不佳。
本發明係解決上述先前課題者，其目的在於提供一種安裝構造體及其製造方法，該安裝構造體係將半導體封裝電性連接於電路基板而成者，可提昇接合部之抗墜落特性，且於使用底膠材之情形時無需硬化爐，利於環境。
本發明之安裝構造體之特徵在於包含：半導體封裝，其含有第1電極；電路基板，其含有第2電極；接合材料，其配置於上述第2電極與形成於上述第1電極上之凸塊之間，且包含將上述凸塊與第2電極電性接合之焊料；第1加強用樹脂，其覆蓋上述接合材料之周圍；及第2加強用樹脂，其將配置於上述電路基板之上述半導體封裝之外周部分與上述電路基板之間覆蓋。
又，本發明之安裝構造體之製造方法之特徵在於：於電路基板上之第2電極上，塗佈混合有焊料材料及未硬化狀態之熱硬化性樹脂之焊膏，且介隔上述混合而成之焊膏，於上述電路基板之第2電極上，介隔凸塊安裝半導體封裝，遍及上述半導體封裝之外周部與上述電路基板之間地塗佈加強用樹脂，且藉由將上述電路基板及上述半導體封裝進行加熱，而使上述焊料材料與上述熱硬化性樹脂分離，且藉由使用具有較上述凸塊之熔點低之熔點之上述焊料材料，而使上述焊料材料熔融並濕潤上述凸塊，其後，上述熱硬化性樹脂濕潤上述焊料 材料與上述凸塊周圍，其後，上述熱硬化性樹脂及上述加強用樹脂硬化。
又，本發明之安裝構造體之製造方法之特徵在於：於電路基板上之第2電極上，塗佈混合有焊料材料及未硬化狀態之熱硬化性樹脂之焊膏，於上述電路基板中之安裝有上述半導體封裝之周邊區域塗佈加強用樹脂，於上述混合而成之焊膏上，介隔凸塊將上述半導體封裝安裝於電路基板之第2電極上，並將上述電路基板及上述半導體封裝加熱，藉此，使上述焊料材料與上述熱硬化性樹脂分離，且藉由使用具有較上述凸塊之熔點低之熔點之上述焊料材料，而使上述焊料材料熔融並濕潤上述凸塊，其後，上述熱硬化性樹脂濕潤上述焊料材料與上述凸塊周圍，其後，使上述熱硬化性樹脂及上述加強用樹脂硬化。
根據本發明，上述接合材料之周圍係由第1加強用樹脂所覆蓋，且，藉由第2加強用樹脂而將半導體封裝之外周部分及上述電路基板覆蓋，藉此，可提昇接合部之抗墜落特性。
100‧‧‧安裝構造體
101‧‧‧半導體封裝
102‧‧‧第1電極
103‧‧‧凸塊
104‧‧‧第2電極
105‧‧‧電路基板
106‧‧‧接合材料
107‧‧‧加強用樹脂(第1加強用樹脂)
108‧‧‧加強用樹脂(第2加強用樹脂)
109‧‧‧空間
110‧‧‧內周
301‧‧‧混合焊膏
302‧‧‧點膠機
601‧‧‧焊料膏
602‧‧‧焊料
603‧‧‧底膠
圖1(a)係本發明之實施形態1中之安裝構造體之剖面圖，(b)係平面圖。
圖2(a)~(d)係說明該實施形態之製造步驟之圖。
圖3A係以該實施形態之實施例1之條件製作之安裝構造體之剖面的顯微鏡照片。
圖3B係以比較例1之條件製作之安裝構造體之剖面的顯微鏡照片。
圖3C係以比較例2之條件製作之安裝構造體之剖面的顯微鏡照片。
圖4(a)~(d)係本發明之實施形態2中之製造之步驟圖。
圖5A係本發明之實施形態3之安裝構造體之剖面圖。
圖5B係本發明之實施形態3之安裝構造體之主要部分之放大圖。
圖6(a)~(d)係專利文獻1中之安裝構造體之剖面圖。
圖7係專利文獻2中之安裝構造體之剖面圖。
以下，一面參照圖式一面對本發明之實施形態進行說明。
(實施形態1)
圖1(a)、(b)表示於電路基板105上安裝有半導體封裝101之實施形態1之安裝構造體100。
半導體封裝101之第1電極102、凸塊103、電路基板105之第2電極104等係與半導體封裝101之大小相比，放大地進行圖示。半導體封裝101之具體大小例如為□11mm，若凸塊103為0.5mm之間距，則設置441個凸塊。電路基板105係依據JEDEC半導體技術協會(JEDEC Solid State Technology Association)標準製作而成者，且具有長邊132mm、短邊77mm之大小，厚度1.0mm，電極材料為銅，且基板材質為玻璃環氧材料。
圖2(a)~(d)係說明該安裝構造體100之製造步驟之圖。
於圖2(a)中，於電路基板105之第2電極104上分別印刷混合焊膏301。混合焊膏301包含如下合金組成之焊料材料(後為接合材料106)及未硬化狀態之熱硬化性樹脂(後為加強用樹脂107者)，該合金組成之焊料材料包含Sn與選自Bi、In、Ag、及Cu之群中之2種或2種以上之元素之組合。
於圖2(b)中，以使半導體封裝101之形成於第1電極102上之凸塊103與印刷於電路基板105上之混合焊膏301接觸之方式，於電路基板105上安裝半導體封裝101。
於圖2(c)中，於半導體封裝101之外周與電路基板105之表面之間，以點膠機302塗佈作為第2加強用樹脂之加強用樹脂108。其後，於圖2(d)中，使用回焊裝置，將混合焊膏301及加強用樹脂108加熱，使混合焊膏301熔融，自混合焊膏301中使接合材料106與作為第1加強用樹脂之加強用樹脂107分離。其結果，以凸塊103及接合材料106將第1電極102與第2電極104之間結合，且以加強用樹脂107覆蓋接合材料106與凸塊103之邊界線。加強用樹脂108係覆蓋半導體封裝101之外周部分，並且於與電路基板105之間形成填角。圖1(a)係圖2(d)之放大圖。
根據此製造方法，半導體封裝101之形成於第1電極102上之凸塊103與電路基板105之第2電極104之間藉由熔融固化之接合材料106而進行焊接，從而電性導通。接合材料106為熔點低於凸塊103之合金組成。電路基板105之第2電極104之周圍與凸塊103之間係由加強用樹脂107覆蓋而接合。又，半導體封裝101之外周部與電路基板105之間亦由加強用樹脂108接合。加強用樹脂108係將半導體封裝101與電路基板105之間連接，並且於半導體封裝101之周圍形成填角。
於本實施形態1中，加強用樹脂108係以覆蓋半導體封裝101之外周部及電路基板105之方式配置，但以加強用樹脂108與半導體封裝101之形成於第1電極上之凸塊103或加強用樹脂107不接觸之方式進行配置。
藉由如此地以加強用樹脂107及加強用樹脂108之二者而將通過凸塊103將第1電極102與第2電極104電性連接之接合材料106加強，更詳細而言，由於將半導體封裝101與電路基板105之間連接，並且於半導體封裝之周圍由加強用樹脂107形成填角，故而，於受到墜落等機械衝擊之情形時，亦可抑制電路基板105之變形，且與 如圖7所示之先前例般僅以加強用樹脂107加強接合材料106之情形相比，可提昇接合部之抗墜落特性。
進而，本方法係使用底膠材之情形時無需硬化爐之利於環境之製造方法。又，由於並非對半導體封裝101與電路基板105之間之全部填充加強用樹脂108，從而形成未填充加強用樹脂108之空間109，故而，與圖6所示之先前例相比，底膠樹脂之使用量較少。
此處，對半導體封裝101之安裝構造體100之構成及材料規格等進而詳細地進行說明。
較理想為，凸塊103由Sn系合金形成。例如，可使用選自由SnBi系、SnIn系、SnBiIn系、SnAg系、SnCu系、SnAgCu系、SnAgBi系、SnCuBi系、SnAgCuBi系、SnAgIn系、SnCuIn系、SnAgCuIn系、及SnAgCuBiIn系所組成之群中之合金組成。
尤佳為Sn系。Sn系合金係熔點為231℃之較低，容易濕潤Cu電極，容易與其他合金製作化合物。又，其原因在於廉價且毒性亦較低。
接合材料106可使用熔點低於凸塊103之合金組成。作為較佳例，較佳為凸塊103及接合材料106均為相同系，或主成分為相同之Sn系。
加強用樹脂107、108包含主成分之樹脂成分及硬化劑，且視需要包含黏度調整/搖變性賦予添加劑。
加強用樹脂107係熱硬化性樹脂，且可包括環氧樹脂、胺基甲酸酯樹脂、丙烯酸系樹脂、聚醯亞胺樹脂、聚醯胺樹脂、雙馬來醯亞胺樹脂、酚系樹脂、聚酯樹脂、聚矽氧樹脂、氧雜環丁烷樹脂等各種樹脂。其等可單獨使用，亦可將2種以上組合。於該等之中，較佳為環氧樹脂。
加強用樹脂108係熱硬化性樹脂，且可包括環氧樹脂、胺基甲 酸酯樹脂、丙烯酸系樹脂、聚醯亞胺樹脂、聚醯胺樹脂、雙馬來醯亞胺樹脂、酚系樹脂、聚酯樹脂、聚矽氧樹脂、氧雜環丁烷樹脂等各種樹脂。其等可單獨使用，亦可將2種以上組合。於該等之中，較佳為環氧樹脂。
加強用樹脂107及加強用樹脂108較佳為樹脂成分均為環氧系等相同系之樹脂。進而，較佳為使樹脂成分相同，且僅改變所含之硬化劑，藉此，於2種樹脂中僅改變反應起始溫度。
作為環氧樹脂，可使用選自雙酚型環氧樹脂、多官能環氧樹脂、可撓性環氧樹脂、溴化環氧樹脂、縮水甘油酯型環氧樹脂、高分子型環氧樹脂之群中之環氧樹脂。例如，可使用雙酚A型環氧樹脂、雙酚F型環氧樹脂、聯苯型環氧樹脂、萘型環氧樹脂、酚系酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂等。亦使用使該等改性而成之環氧樹脂。該等可單獨使用，亦可將2種以上組合使用。
作為與如上所述之熱硬化性樹脂組合地使用之硬化劑，可使用選自硫醇系化合物、胺系化合物、多官能酚系化合物、咪唑系化合物、及酸酐系化合物之群中之化合物。該等可單獨使用，亦可組合2種以上。
又，可視需要，使用無機系或有機系者作為黏度調整/搖變性賦予添加劑，例如，若為無機系，可使用二氧化矽或氧化鋁等，若為有機系，可使用醯胺、聚酯系、蓖麻油等之衍生物等。該等可單獨使用，亦可組合2種以上。
(實施例)
作為本發明之實施例，改變混合有焊料材料及未硬化狀態之熱硬化性樹脂之混合焊膏301之種類及加強用樹脂108、回焊到達溫度，分析導通是否合格、抗墜落特性之影響，且將其結果示於下述表1。
-材料-
混合有焊料材料及未硬化狀態之熱硬化性樹脂之混合焊膏301係於焊料材料中相對於Sn58Bi焊料88重量份，使用作為熱硬化性樹脂之雙酚F型環氧樹脂(商品名「YDF-7510」新日鐵化學股份有限公司製造)作為未硬化狀態之熱硬化性樹脂。
黏度調整劑/搖變賦予材中，使用將捏合有蓖麻油系搖變劑(商品名「THIXCIN R」日本海明斯(Elementis Specialties,Inc.)製造)與作為硬化劑之咪唑系硬化劑、具有助焊作用之有機酸(「己二酸」關東化學股份有限公司製造)者混合18重量份而成者。此時，關於作為硬化劑之咪唑系硬化劑，基於以下考量進行調整。於製作相對於焊料材料之熔點為138℃之Sn58Bi，環氧樹脂及硬化劑之反應起始溫度成為130℃、140℃、155℃之未硬化狀態之熱硬化性樹脂之情形時，分別使用2,4-二胺基-6-(2'-甲基咪唑基-(1'))-乙基-均三異三聚氰酸加成物(商品名「2MA-OK」四國化成工業股份有限公司製造)、2-苯基-4- 甲基-5-羥甲基咪唑(商品名「2P4MHZ-PW」四國化成工業股份有限公司製造)、2-苯基-4,5-二羥甲基咪唑(商品名「2PHZ-PW」四國化成工業股份有限公司製造)。
SnAgCu混合焊膏301中，使用Sn3.0Ag0.5Cu(商品名「M705-GRN360-L60A」千住金屬工業股份有限公司製造)。
半導體封裝101中，使用裝載Sn3.0Ag0.5Cu球作為形成於第1電極上之凸塊103之半導體封裝。
Sn58Bi焊料之熔點為138℃，Sn3.0Ag0.5Cu焊料之熔點為217℃。
就加強用樹脂108而言，熱硬化性樹脂中，共通地使用雙酚F型環氧樹脂(商品名「YDF-7510」新日鐵化學股份有限公司製造)，硬化劑中，共通地使用130℃硬化對應之咪唑系硬化劑(商品名「2MA-OK」四國化成工業股份有限公司製造)、140℃硬化對應之咪唑系硬化劑(商品名「2P4MHZ-PW」四國化成工業股份有限公司製造)、或155℃硬化對應之咪唑系硬化劑(商品名「2PHZ-PW」四國化成工業股份有限公司製造)黏度調整/搖變性賦予添加劑中，共通地使用二氧化矽系搖變劑(商品名「AEROSIL RY200」日本Aerosil股份有限公司製造)。
(評價)
各個安裝構造體之評價係根據以下方式進行。
作為導通是否合格，於安裝構造體製作後，藉由測試機確認是否導通。導通是否合格係將電阻值為9.8~10Ω之範圍之情形設為合格，且以○標記，將範圍外之情形標記為×。
作為抗墜落試驗，以抗墜落壽命進行評價。具體而言，依據JEDEC標準，以加速度、1500G、墜落時間、0.5秒鐘之條件使安裝構造體墜落，將電性連接產生瞬間中斷時作為抗墜落壽命，將至產生 瞬間中斷為止之墜落次數作為抗墜落壽命。作為瞬間中斷是否合格之判定，於墜落時，對半導體封裝施加2.0V之電壓，將電壓降低10%以上時判斷為不合格。又，將此時之最高墜落次數設為30次。
再者，此處所使用之半導體封裝之大小為□11mm之尺寸，形成於第1電極上之凸塊103為0.5mm之間距，且凸塊數為441個，電路基板105為長邊132mm、短邊77mm之大小，且厚度1.0mm，電極材料為銅，基板材質為玻璃環氧材料。
(評價結果1：導通試驗)
表示對以表1之實施例1~3、比較例1~2之條件，利用圖2所示之安裝方法1製作之安裝構造體之導通是否合格進行評價所得之結果。
表1係表示將混合有焊料材及未硬化狀態之熱硬化性樹脂之混合焊膏301之焊料組成設為Sn58Bi(熔點：138℃)，使混合有焊料材及未硬化狀態之熱硬化性樹脂之混合焊膏301中所含之未硬化狀態之熱硬化性樹脂的硬化劑、及加強用樹脂108中所含之硬化劑之反應起始溫度產生變化，對製作本發明之安裝構造體時要求之材料特性進行研究所得之結果。
實施例1之條件係使用混合有焊料材及未硬化狀態之熱硬化性樹脂之混合焊膏301，製作安裝構造體100。
以使用混合有焊料材及未硬化狀態之熱硬化性樹脂之混合焊膏301之焊料組成為Sn58Bi(焊料熔點138℃)、140℃硬化對應之咪唑系硬化劑(商品名「2P4MHZ-PW」四國化成工業股份有限公司製造)製作而成者，且加強用樹脂108之硬化劑中亦使用相同者製作安裝構造體之後，確認到電阻值為9.9Ω，且藉由測試機獲得導通。
圖3A係以實施例1之條件製作之安裝構造體之剖面的顯微鏡照片。包含半導體封裝101、第1電極102、形成於第1電極上之凸塊 103、形成於電路基板105上之第2電極104、接合材料106、加強用樹脂107。
此時，形成於第1電極上之凸塊103之組成係設為熔點為217℃之Sn3.0Ag0.5Cu焊料凸塊。又，製作安裝構造體時之回焊到達溫度係設為160℃。
其結果，確認到接合材料106於凸塊103之周圍濕潤至虛線部為止，進而加強用樹脂107於其周圍形成填角形狀至虛線部為止。
根據該等結果，可知於圖3A之構造體之製作中，相對於混合焊膏301之焊料熔點138℃，未硬化狀態之熱硬化性樹脂與加強用樹脂之硬化劑之反應起始溫度高達140℃較為有效。
又，即便於使用將以實施例2、3之條件，採用反應起始溫度較Sn58Bi焊料之熔點138℃高之140℃硬化對應之咪唑系硬化劑(商品名「2P4MHZ-PW」四國化成工業股份有限公司製造)、或155℃硬化對應之咪唑系硬化劑(商品名「2PHZ-PW」四國化成工業股份有限公司製造)製作而成之焊料材料與未硬化狀態之熱硬化性樹脂混合而成之混合焊膏301或加強用樹脂108，製作安裝構造體之情形時，亦可獲得與實施例1同樣之結果。
即，未硬化狀態之熱硬化性樹脂與加強用樹脂108之硬化劑之反應起始溫度高於混合有焊料材及未硬化狀態之熱硬化性樹脂之混合焊膏301之焊料熔點，於製作本發明之安裝構造體中較為重要。
繼而，以比較例1之條件，使用相對於混合焊膏301之焊料之熔點138℃，混合有焊料材料及未硬化狀態之熱硬化性樹脂之混合焊膏301之反應起始溫度為130℃硬化對應之咪唑系硬化劑(商品名「2MA-OK」四國化成工業股份有限公司製造)，且加強用樹脂108為140℃硬化對應之咪唑系硬化劑(商品名「2P4MHZ-PW」四國化成工業股份有限公司製造)者，製作安裝構造體之後，電阻值為18Ω， 未獲得導通之確認。
即，與實施例1之不同在於：相對於焊料之熔點138℃，未硬化狀態之熱硬化性樹脂之硬化劑之反應起始溫度為130℃，加強用樹脂108之反應起始溫度為140℃。
將以比較例1之條件製作之安裝構造體之剖面的顯微鏡照片示於圖3B。對其進行觀察後，確認到加強用樹脂107於凸塊103之周圍濕潤至虛線部為止，但接合材料106未濕潤至凸塊103之周圍為止，以虛線部之狀態停止。
即，可知若以比較例1之條件製作安裝構造體，則於混合有焊料材料及未硬化狀態之熱硬化性樹脂之混合焊膏301中所含之焊料材料濕潤形成於第1電極上之凸塊103周圍之前，未硬化狀態之熱硬化性樹脂濕潤形成於第1電極上之凸塊103周圍，硬化結束，故而未獲得導通之確認。
又，以比較例2之條件，使用相對於混合焊膏301之焊料之熔點138℃，混合有焊料材料與未硬化狀態之熱硬化性樹脂之混合焊膏301之反應起始溫度為140℃硬化對應之咪唑系硬化劑(商品名「2P4MHZ-PW」四國化成工業股份有限公司製造)，且加強用樹脂108為130℃硬化對應之咪唑系硬化劑(商品名「2MA-OK」四國化成工業股份有限公司製造)者，製作安裝構造體之後，電阻值為23Ω，未獲得導通之確認。
即，與實施例1之不同在於：相對於焊料之熔點138℃，未硬化狀態之熱硬化性樹脂之硬化劑之反應起始溫度為140℃，加強用樹脂107之反應起始溫度為130℃。
將以比較例2之條件製作之安裝構造體之剖面的顯微鏡照片示於圖3C。對其進行觀察後，確認到加強用樹脂108濕潤凸塊103之周圍，但接合材料106未濕潤。
此情況係包含130℃硬化對應之咪唑系硬化劑(商品名「2MA-OK」四國化成工業股份有限公司製造)之加強用樹脂108比混合有焊料材料及未硬化狀態之熱硬化性樹脂之混合焊膏301之焊料材的熔點(138℃)更早進行硬化，於焊料熔融時，半導體封裝101未能浸沒。因此，熔融之焊料與形成於第1電極上之凸塊103間之距離變長，熔融之焊料無法濕潤形成於第1電極上之凸塊103。
-導通試驗之結果總結-
根據該等結果，可知於製作本發明之安裝構造體之情形時，較佳為，相對於塗佈於電路基板105之焊料之熔點，未硬化狀態之熱硬化性樹脂及加強用樹脂之反應起始溫度較高。
作為本發明之安裝構造體之製作製程而言，混合有焊料材料及未硬化狀態之熱硬化樹脂之混合焊膏301中所含之焊料熔融，焊料材料濕潤半導體封裝101之形成於第1電極上之凸塊103後，未硬化狀態之熱硬化樹脂濕潤其周圍，未硬化狀態之熱硬化樹脂及加強用樹脂之硬化開始並完成，對於製作本發明之安裝構造體之製程較為有益，但該情況亦可自導通是否合格得知。
即，作為製作本發明之安裝構造體之要點，較理想為半導體封裝101之形成於第1電極上之凸塊103的熔點、混合有焊料材料及未硬化狀態之熱硬化性樹脂之混合焊膏301中所含之焊料材的熔點與混合有焊料材料及未硬化狀態之熱硬化性樹脂之混合焊膏301中所含之熱硬化性樹脂及加強用樹脂108的反應起始溫度之關係為下述關係。
必需為形成於第1電極上之凸塊103之熔點>加強用樹脂108開始硬化之反應起始溫度≧混合焊膏301中之熱硬化性樹脂之反應起始溫度>混合焊膏301中之焊料材之熔點之關係。
加強用樹脂108之反應起始溫度與混合焊膏301中之熱硬化性之加強用樹脂107之反應起始溫度較佳為存在5℃至15℃之差。
其原因在於：爭取加強用樹脂107用於濕潤至焊料凸塊之時間、及用以覆蓋其周圍之加強用樹脂107用於濕潤之時間。若溫度差過大，則必需進行熱處理直至達到較高之溫度為止。
混合焊膏301中之焊料材料之熔點與兩種樹脂之反應起始溫度之差例如為2℃至17℃，較佳為10℃以上即可。
需要溫度差之原因在於：焊料材料熔解，需要半導體封裝101與上述電路基板105之自對準之時間。
另一方面，若溫度差過大，則與上述同樣地整體之熱處理溫度變高。
-墜落試驗-
對實施例1及下述表2所示之比較例3~4，評價安裝構造體之抗墜落特性是否合格。
實施例1為圖1所示之安裝構造體100，比較例4為圖6(d)所示之安裝構造體，比較例3為圖6(c)所示之狀態之安裝構造體。
抗墜落試驗係以抗墜落壽命進行評價。具體而言，依據JEDEC標準，以加速度、1500G、墜落時間、0.5秒鐘之條件使安裝構造體 墜落，將電性連接出現瞬間中斷時作為抗墜落壽命，將產生瞬間中斷為止之墜落次數作為抗墜落壽命。作為瞬間中斷是否合格之判定，於墜落時，對半導體封裝施加2.0V之電壓，將電壓降低10%以上時判斷為不合格。又，將此時之最高墜落次數設為30次。
再者，此處所使用之半導體封裝之大小為□11mm之大小，形成於第1電極上之凸塊103為0.5mm之間距，凸塊數為441個，電路基板105為長邊132mm、短邊77mm之大小，厚度1.0mm，電極材料為銅，基板材質為玻璃環氧材料。
藉由實施例1之條件製作安裝構造體，對抗墜落壽命進行評價，結果顯示為30次。再者，此時之回焊到達溫度為160℃。
此時之凸塊103之組成係設為熔點為217℃之Sn3.0Ag0.5Cu焊料凸塊。又，製作安裝構造體時之回焊到達溫度係設為160℃，且使用採用140℃硬化對應之咪唑系硬化劑(商品名「2P4MHZ-PW」四國化成工業股份有限公司製造)製作而成之焊料材及未硬化狀態之熱硬化性樹脂混合所得的混合焊膏301，焊料材係設為熔點為138℃之SnBi。
於比較例3，製作圖6(c)所示之安裝構造體並進行評價。
圖6(c)包含半導體封裝101、第1電極102、電路基板105、第2電極104、SnAgCu焊料膏601。
安裝構造體之製作方法係如圖6所示。於圖6中，以於電路基板105之第2電極104上印刷SnAgCu焊料膏601(圖6(a))，且觸及半導體封裝101之形成於第1電極上之凸塊103之方式進行安裝(圖6(b))。
於圖6(c)中進行回焊。當進行回焊時，印刷於第2電極104之SnAgCu焊料膏601及形成於第1電極上之凸塊103之焊料熔融，半導體封裝零件因自對準性而移動至適當之位置。其後，當達到焊料之 熔融溫度以下時，使焊料凝固，半導體封裝101對電路基板105之電性連接完成。此時印刷於第2電極104之SnAgCu焊料膏601與半導體封裝101之凸塊103之組成相同。又，此時之回焊到達溫度為250℃。
對該安裝構造體(圖6(c))進行評價，結果可知抗墜落壽命為5次，相對於實施例4之抗墜落壽命而言較差。
製作使用以比較例4之條件製作之圖6(d)之底膠603的安裝構造體，並評價抗墜落特性。該安裝構造體(圖6(d))係對以比較例3之方法製作之安裝構造體(圖6(c))藉由點膠機而塗佈底膠603後，藉由加熱使其硬化而成者。
對該安裝構造體(圖6(d))進行評價，結果可知其為抗墜落壽命為30次(最大墜落次數)，且獲得與實施例6同等之連接可靠性之安裝構造體。
-墜落試驗之結果總結-
即，可知以實施例1之條件製作之安裝構造體(圖1所示之安裝構造體)獲得與先前之對半導體封裝零件與電路基板進行焊料接合所製作之安裝構造體同等之連接可靠性。
如上所述，本發明可謂如下安裝構造體：其以利用加強用樹脂覆蓋配置於含有第1電極102之半導體封裝101、含有第2電極104之電路基板105、配置於第2電極104與形成於第1電極102上之凸塊103之間並通過凸塊103將第1電極102與第2電極104電性接合之接合材料106、配置於上述電路基板105之半導體封裝101之外周部分及上述電路基板105，尤其覆蓋凸塊103與接合材料106之接合部之方式，利用加強用樹脂覆蓋各個接合材料之周圍，藉此，預期抗墜落特性之提昇。即，可用於以行動電話裝置為代表之移動機器。又，製造該安裝構造體時，回焊到達溫度較先前溫度低，故可謂作為 環境問題、尤其全球暖化之對策較為有益。
即，作為製作本發明之安裝構造體之要點，較理想為半導體封裝101之形成於第1電極102上之凸塊103、混合有焊料材料及未硬化狀態之熱硬化性樹脂之混合焊膏301中所含之熱硬化性樹脂與加強用樹脂108之反應起始溫度的關係為下述關係。
必需為形成於第1電極102上之凸塊103之熔點>加強用樹脂108之反應起始溫度≧混合焊膏301中所含之熱硬化性樹脂之反應起始溫度>焊料材料之熔點。
又，可知藉由此條件製作之安裝構造體之抗墜落特性與使用先前之焊接之方法，即於焊接後對BGA與電路基板之間填充加強樹脂材料使BGA及電路基板固著，藉此，提昇接合部之抗墜落特性之方法(圖6(d))(專利文獻1)同等。
如此般，本發明之安裝構造體及其製造方法可提昇半導體封裝與電路基板之接合部之抗墜落特性，可對以行動電話裝置為代表之移動機器等，使用熔點較先前一直使用之SnAgCu系焊料低之SnBi系焊料材料。
(實施形態2)
圖4(a)~(d)係表示安裝構造體100之另一製造方法。
圖2所示之實施形態1之製造步驟係於在電路基板105上安裝半導體封裝101後且實施回焊前之時間，藉由點膠機302而塗佈加強用樹脂108，但本實施形態2於以下方面不同：於將半導體封裝101安裝於電路基板105上之前，將加強用樹脂108塗佈於電路基板105上。其他與實施形態1相同。
於圖4(a)中，於電路基板105之第2電極104上印刷混合而成之混合焊膏301。
其後，於圖4(b)中，於電路基板105中之安裝有半導體封裝101 之周邊區域以點膠機302塗佈加強用樹脂108。
其後，於圖4(c)中，以使半導體封裝101之形成於第1電極102上之凸塊103與印刷於電路基板105上之混合焊膏301接觸之方式，將半導體封裝101安裝至電路基板105上。
其後，於圖4(d)中，使用回焊裝置，對混合焊膏301及加強用樹脂108進行加熱，將混合焊膏301熔融，自混合焊膏301中使接合材料106與加強用樹脂107分離。結果，以凸塊103及接合材料106將第1電極102與第2電極104之間結合，且以加強用樹脂107覆蓋接合材料106、接合材料106與凸塊103之邊界線。加強用樹脂108係覆蓋半導體封裝101之外周部分，並且於與電路基板105間形成填角。
如此般，以圖4所示之製造方法亦可製造圖1所示之安裝構造體100。
(實施形態3)
圖5A及圖5B係表示本發明之實施形態3之安裝構造體。
圖5A係藉由本發明之實施形態2之安裝方法而獲得之安裝構造體100之半導體封裝101之剖面圖，又，圖5B係將圖5A之左端放大所得者。
實施形態1之安裝構造體100係加強用樹脂108之內周110不與加強用樹脂107或凸塊103接觸，但於本實施形態3中，加強用樹脂108與半導體封裝101、形成於第1電極上之凸塊103、將通過凸塊將第1電極與第2電極電性接合之接合材料106加強之加強用樹脂107以及電路基板105接觸。較佳為，加強用樹脂108及加強用樹脂107之成分相同。
作為加強用樹脂108，較佳為環氧樹脂。藉由使加強用樹脂108及加強用樹脂107之成分相同，而容易調整回焊時之熱作用下之樹脂 之反應起始溫度，又，於硬化時，即便混合有加強用樹脂108及將通過凸塊將第1電極與第2電極電性接合之接合材料106加強之加強用樹脂107的成分，亦容易保持作為硬化物之樹脂之物性。
本實施形態3之安裝構造體100可藉由於圖2(c)所示之步驟或圖4(b)所示之步驟中增加加強用樹脂108之量而製造。
本實施形態3之安裝構造體之抗墜落特性較實施形態1之情形良好。
[產業上之可利用性]
根據本發明，有助於提昇以行動電話裝置為代表之移動機器等之可靠性。
100‧‧‧安裝構造體
101‧‧‧半導體封裝
102‧‧‧第1電極
103‧‧‧凸塊
104‧‧‧第2電極
105‧‧‧電路基板
106‧‧‧接合材料
107‧‧‧加強用樹脂(第1加強用樹脂)
108‧‧‧加強用樹脂(第2加強用樹脂)
109‧‧‧空間
110‧‧‧內周

Claims (10)

  1. 一種安裝構造體，其包含：半導體封裝，其含有第1電極；電路基板，其含有第2電極；接合材料，其配置於上述第2電極與形成於上述第1電極上之凸塊之間，且包含將上述凸塊與第2電極電性接合之焊料；第1加強用樹脂，其覆蓋上述接合材料之周圍；及第2加強用樹脂，其將配置於上述電路基板之半導體封裝之外周部分與上述電路基板之間覆蓋，且上述凸塊之熔點>上述第2加強用樹脂之反應起始溫度≧上述第1加強用樹脂之反應起始溫度>上述接合材料之熔點。
  2. 如請求項1之安裝構造體，其中上述凸塊為焊料材料。
  3. 如請求項1之安裝構造體，其中上述第1加強用樹脂與上述第2加強用樹脂接觸。
  4. 如請求項1之安裝構造體，其中上述第1加強用樹脂及第2加強用樹脂之樹脂成分為相同組成，且所含之硬化劑不同。
  5. 如請求項1之安裝構造體，其中上述凸塊之合金組成及上述接合材料為Sn系材料。
  6. 如請求項1之安裝構造體，其中上述凸塊之合金組成係由SnAgCu系焊料所形成，且上述接合材料為SnBi系。
  7. 如請求項1之安裝構造體，其中上述第1加強用樹脂之反應起始溫度與上述第2加強用樹脂之反應起始溫度具有5℃至15℃之差。
  8. 如請求項1之安裝構造體，其中上述第1加強用樹脂之反應起始溫度及上述第2加強用樹脂之反應起始溫度係與上述接合材 料之熔點之溫度差為2℃至17℃。
  9. 一種安裝構造體之製造方法，其係於電路基板上之第2電極上，塗佈混合有接合材料及未硬化狀態之第1加強用樹脂之焊膏，介隔上述混合而成之焊膏，於上述電路基板之上述第2電極上，介隔凸塊安裝半導體封裝，遍及上述半導體封裝之外周部與上述電路基板之間地塗佈第2加強用樹脂，藉由將上述電路基板及上述半導體封裝進行加熱，而使上述接合材料與上述第1加強用樹脂分離，且使上述接合材料熔融並濕潤上述凸塊，其後，上述第1加強用樹脂濕潤上述接合材料與上述凸塊周圍，其後，上述第1加強用樹脂及上述第2加強用樹脂硬化，且上述凸塊之熔點>上述第2加強用樹脂之反應起始溫度≧上述第1加強用樹脂之反應起始溫度>上述接合材料之熔點。
  10. 一種安裝構造體之製造方法，其係於電路基板上之第2電極上，塗佈混合有接合材料及未硬化狀態之第1加強用樹脂之焊膏，於上述電路基板中之安裝上述半導體封裝之周邊區域塗佈第2加強用樹脂，於上述混合而成之焊膏上，介隔凸塊將上述半導體封裝安裝於上述電路基板之上述第2電極上，將上述電路基板及上述半導體封裝加熱，藉此，使上述接合材料與上述第1加強用樹脂分離，使上述接合材料熔融並濕潤上述凸塊，其後，上述第1加強用樹脂濕潤上述接合材料與上述凸塊周圍，其後，使上述第1 加強用樹脂及上述第2加強用樹脂硬化，且上述凸塊之熔點>上述第2加強用樹脂之反應起始溫度≧上述第1加強用樹脂之反應起始溫度>上述接合材料之熔點。
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