JP6365841B2 - 実装構造体とその製造方法 - Google Patents
実装構造体とその製造方法 Download PDFInfo
- Publication number
- JP6365841B2 JP6365841B2 JP2014514363A JP2014514363A JP6365841B2 JP 6365841 B2 JP6365841 B2 JP 6365841B2 JP 2014514363 A JP2014514363 A JP 2014514363A JP 2014514363 A JP2014514363 A JP 2014514363A JP 6365841 B2 JP6365841 B2 JP 6365841B2
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- resin
- electrode
- circuit board
- bonding material
- reinforcing resin
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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Description
にバンプを有する半導体パッケージ部品は、図6(a)〜(d)で説明する工程によって実装されている。
例えば、図7は特許文献2に記載された実装構造体である。
この実装構造体は、第1電極102を有する半導体パッケージ101と第2電極104を有する回路基板105と、第1電極102上に形成されたバンプ103と、バンプ103と第2電極104の間に配置され、バンプ103を通じて第1電極102と第2電極104とを電気的に接続する接合部材106と、バンプ103と接合材料106との接合部分および接合部材を覆うように個々の接合部材の周囲に配置された補強用樹脂107とを備え、それぞれの補強用樹脂107が、隣接する補強用樹脂同士が接触しないように、互いに離間して配置されている。
しかしながら、SnAgCu系はんだでのはんだ接合後、半導体パッケージ101と回路基板の間にアンダーフィル材603などを固着させた場合と比較すると、十分な耐落下特性を得ることができない。つまり、携帯電話装置に代表されるモバイル機器などに対して、従来用いられてきたSnAgCu系のはんだよりも融点の低いSnBi系はんだ材料を使用できないことを示している。
(実施の形態1)
図1(a)(b)は、回路基板105に半導体パッケージ101を実装した実施の形態1の実装構造体100を示す。
図2(a)では、回路基板105の第2電極104上にそれぞれ混合ペースト301を印刷する。混合ペースト301は、SnとBi、In、Ag、およびCuの群から選ばれる2種類もしくは、それ以上の元素との組み合わせからなる合金組成のはんだ材料(後に接合材料106となるもの)と、未硬化状態の熱硬化性樹脂(後に補強用樹脂107となるもの)とからなる。
バンプ103は、Sn系合金から形成されていることが望ましい。例えば、SnBi系、SnIn系、SnBiIn系、SnAg系、SnCu系、SnAgCu系、SnAgBi系、SnCuBi系、SnAgCuBi系、SnAgIn系、SnCuIn系、SnAgCuIn系、およびSnAgCuBiIn系からなる群から選ばれる合金組成を用いることができる。
特に、Sn系がよい。Sn系合金は融点が231℃と低くく、Cu電極に濡れ易く、他の合金と化合物を作りやすい。また安価で、毒性も低いためである。
補強用樹脂107、108は、主成分の樹脂成分と、硬化剤とを含み、必要に応じて、粘度調整/チクソ性付与添加剤を含む。
補強用樹脂107は、熱硬化性樹脂であり、エポキシ樹脂、ウレタン樹脂、アクリル樹脂、ポリイミド樹脂、ポリアミド樹脂、ビスマレイミド樹脂、フェノール樹脂、ポリエステル樹脂、シリコーン樹脂、オキセタン樹脂など、さまざまな樹脂を含むことができる。これらは、単独で用いてもよく、2種類以上を組み合わせても良い。これらのうちでは、エポキシ樹脂が好適である。
補強用樹脂107と、補強用樹脂108とは、樹脂成分がともにエポキシ系などの同じ系の樹脂がよい。さらに、樹脂成分を同じにして、含有させる硬化剤のみを変えることで反応開始温度のみを2つの樹脂で変えるのが好ましい。
本発明の実施例として、はんだ材料と未硬化状態の熱硬化性樹脂が混和した混合ペースト301の種類と補強用樹脂108、リフロー到達温度を変化させ、導通の合否、耐落下特性の影響を調べ、下記の表1にその結果を示した。
はんだ材料と未硬化状態の熱硬化性樹脂が混和した混合ペースト301は、はんだ材料にSn58Biはんだ88重量部に対し、未硬化状態の熱硬化性樹脂として、熱硬化性樹脂であるビスフェノールF型エポキシ樹脂(商品名「YDF−7510」新日鐵化学株式会社製)を用いた。
半導体パッケージ101には、第1電極上に形成されたバンプ103として、Sn3.0Ag0.5Cuボール搭載の半導体パッケージを用いた。
補強用樹脂108には、熱硬化性樹脂には、ビスフェノールF型エポキシ樹脂(商品名「YDF−7510」新日鐵化学株式会社製)、硬化剤には、130℃硬化対応のイミダゾール系硬化剤(商品名「2MA−OK」四国化成工業株式会社製)、140℃硬化対応のイミダゾール系硬化剤(商品名「2P4MHZ−PW」四国化成工業株式会社製)、または、155℃硬化対応のイミダゾール系硬化剤(商品名「2PHZ−PW」四国化成工業株式会社製)粘度調整/チクソ性付与添加剤には、シリカ系チクソ剤(商品名「AEROSIL RY200」日本アエロジル株式会社製)を共通して使用した。
それぞれの実装構造体の評価は、以下のように行った。
導通の合否として、実装構造体作成後、テスターにて、導通の有無を確認した。導通の合否は、抵抗値が9.8〜10Ωの範囲である場合を合格として、○で表記し、範囲外である場合を、×と表記した。
表1の実施例1〜3、比較例1〜2の条件で、図2に示した実装方法1で作成した実装構造体の導通の合否について評価した結果を示す。
はんだ材と未硬化状態の熱硬化性樹脂が混和した混合ペースト301のはんだ組成がSn58Bi(はんだ融点138℃)、140℃硬化対応のイミダゾール系硬化剤(商品名「2P4MHZ−PW」四国化成工業株式会社製)を用いて作成されたもので、補強用樹脂108の硬化剤にも同様のものを用いて実装構造体を作成したところ、抵抗値が、9.9Ωとテスターにて導通がとれることが確認された。
これらの結果より、本発明の実装構造体を作成する場合において、回路基板105に塗布されるはんだ材料の融点に対し、未硬化状態の熱硬化性樹脂および補強用樹脂の反応開始温度が高いことが好ましいことがわかる。
補強用樹脂108の反応開始温度と混合ペースト301中の熱硬化性の補強用樹脂107)の反応開始温度は、5℃から15℃の差があった方がよい。
その理由は、補強用樹脂107が、はんだのバンプへの濡れ上がるための時間と、その周囲を覆うための補強用樹脂107の濡れ上がりのための時間を稼ぐためである。温度差がありすぎると、高い温度まで熱処理が必要となる。
混合ペースト301中のはんだ材料の融点と、2つの樹脂の反応開始温度との差は、例えば、2℃から17℃で、好ましくは、10℃以上がよい。
温度差が必要な理由は、はんだ材料が溶けて、半導体パッケージ101と前記回路基板105とのセルフアライメントの時間が必要であることです。
一方、温度差がありすぎると、上記同様全体の熱処理温度が高くなってしまうことである。
実施例1と下記の表2に示す比較例3〜4について、実装構造体の耐落下特性の合否を評価した。
このときのバンプ103の組成は、融点が217℃のSn3.0Ag0.5Cuはんだバンプとした。また、実装構造体を作成する際のリフロー到達温度は、160℃とし、140℃硬化対応のイミダゾール系硬化剤(商品名「2P4MHZ−PW」四国化成工業株式会社製)を用いて作成されたはんだ材と未硬化状態の熱硬化性樹脂とが混和した混合ペースト301を用い、はんだ材は、融点が138℃のSnBiとした。
図6(c)は、半導体パッケージ101、第1電極102、回路基板105、第2電極104、SnAgCuはんだペースト601から構成されている。
比較例4の条件で作成した図6(d)のアンダーフィル603を用いた実装構造体を作成し、耐落下特性を評価した。この実装構造体(図6(d))は、比較例3の方法にて作成した実装構造体(図6(c))に、ディスペンサーにて、アンダーフィル603を塗布後、加熱にて硬化させたものである。
つまり、実施例1の条件で作成した実装構造体(図1に示す実装構造体)が、従来の半導体パッケージ部品と回路基板をはんだ付け接合して作成した実装構造体と同等の接続信頼性を与えるものであることがわかる。
図4(a)〜(d)は、実装構造体100の別の製造方法を示す。
図2に示した実施の形態1の製造工程では、回路基板105上に半導体パッケージ101をマウントした後で、リフローを実施する前のタイミングに、ディスペンサー302によって補強用樹脂108を塗布したが、この実施の形態2では、半導体パッケージ101を回路基板105上にマウントする前に、補強用樹脂108を回路基板105に塗布している点が異なっている。その他は実施の形態1と同じである。
その後、図4(b)では、回路基板105における半導体パッケージ101がマウントされる周辺領域に補強用樹脂108をディスペンサー302で塗布する。
(実施の形態3)
図5Aと図5Bは本発明の実施の形態3の実装構造体を示す。
この実施の形態3の実装構造体の耐落下特性は実施の形態1の場合よりも良好である。
101 半導体パッケージ
102 第1電極
103 バンプ
104 第2電極
105 回路基板
106 接合材料
107 補強用樹脂(第1補強用樹脂)
108 補強用樹脂(第2補強用樹脂)
301 混合ペースト
302 ディスペンサー
Claims (8)
- 第1電極を有する半導体パッケージと、
第2電極を有する回路基板と、
前記第2電極と前記第1電極上に形成されたバンプとの間に配置され、前記バンプと第2電極とを電気的に接合するはんだを含む接合材料と、
前記接合材料の周囲を覆う第1補強用樹脂と、
前記回路基板に配置された半導体パッケージの外周部分と前記回路基板との間を覆う第2補強用樹脂とを含み、
前記バンプの融点 > 前記第2補強用樹脂の反応開始温度 > 前記第1補強用樹脂の反応開始温度 > 前記接合材料の融点であり、
前記第1補強用樹脂の反応開始温度と前記第2補強用樹脂の反応開始温度とは、5℃から15℃の差がある実装構造体。 - 前記バンプが、はんだ材料であることを特徴とする請求項1記載の実装構造体。
- 前記第1補強用樹脂と第2補強用樹脂との樹脂成分が同じ組成で、含まれる硬化剤が異なることを特徴とする請求項1記載の実装構造体。
- 前記バンプの合金組成と、前記接合材料とが、Sn系材料であることを特徴とする請求項1記載の実装構造体。
- 前記バンプの合金組成がSnAgCu系のはんだで形成され、前記接合材料が、SnBi系であることを特徴とする請求項1記載の実装構造体。
- 前記第1補強用樹脂の反応開始温度と前記第2補強用樹脂の反応開始温度は、前記接合材料の融点との温度差が2℃から17℃である請求項1記載の実装構造体。
- 回路基板上の第2電極上に、接合材料と未硬化状態の第1補強用樹脂が混和したペーストを塗布し、
前記混和したペーストを介して前記回路基板の第2電極上に、半導体パッケージをバンプを介してマウントし、
前記半導体パッケージの外周部と前記回路基板との間にわたって第2補強用樹脂を塗布し、
前記回路基板と前記半導体パッケージとを加熱することにより、前記接合材料と前記第1補強用樹脂とを分離させ、
前記接合材料が溶融し、前記バンプに濡れ上がり、その後、前記第1補強用樹脂が前記接合材料と前記バンプの周囲に濡れ上がり、その後、前記第1補強用樹脂と前記第2補強用樹脂が硬化する実装構造体の製造方法であり、
前記第1補強用樹脂と前記第2補強用樹脂とは接触せず、
前記バンプの融点 > 前記第2補強用樹脂の反応開始温度 > 前記第1補強用樹脂の反応開始温度 > 前記接合材料の融点であり、
前記第1補強用樹脂の反応開始温度と前記第2補強用樹脂の反応開始温度とは、5℃から15℃の差がある実装構造体の製造方法。 - 回路基板上の第2電極上に、接合材料と未硬化状態の第1補強用樹脂が混和したペーストを塗布し、
前記回路基板における半導体パッケージがマウントされる周辺領域に第2補強用樹脂を塗布し、
前記混和したペーストに前記半導体パッケージをバンプを介して回路基板の第2電極上にマウントし、
前記回路基板と前記半導体パッケージとを加熱することにより、前記接合材料と前記第1補強用樹脂とを分離させ、
前記接合材料が溶融し、前記バンプに濡れ上がり、その後、前記第1補強用樹脂が前記接合材料と前記バンプの周囲に濡れ上がり、その後、前記第1補強用樹脂と前記第2補強用樹脂を硬化させる実装構造体の製造方法であり、
前記第1補強用樹脂と前記第2補強用樹脂とは接触せず、
前記バンプの融点 > 前記第2補強用樹脂の反応開始温度 > 前記第1補強用樹脂の反応開始温度 > 前記接合材料の融点であり、
前記第1補強用樹脂の反応開始温度と前記第2補強用樹脂の反応開始温度とは、5℃から15℃の差がある実装構造体の製造方法。
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