WO2013111495A1 - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
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- WO2013111495A1 WO2013111495A1 PCT/JP2012/083510 JP2012083510W WO2013111495A1 WO 2013111495 A1 WO2013111495 A1 WO 2013111495A1 JP 2012083510 W JP2012083510 W JP 2012083510W WO 2013111495 A1 WO2013111495 A1 WO 2013111495A1
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- semiconductor layer
- photoelectric conversion
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- electrode layer
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 59
- 239000004065 semiconductor Substances 0.000 claims abstract description 118
- 239000013078 crystal Substances 0.000 claims abstract description 29
- 150000001875 compounds Chemical class 0.000 claims description 19
- 239000002245 particle Substances 0.000 abstract description 9
- 238000003475 lamination Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 155
- 239000004020 conductor Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 3
- 238000000224 chemical solution deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910001849 group 12 element Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000004771 selenides Chemical class 0.000 description 1
- 229940082569 selenite Drugs 0.000 description 1
- MCAHWIHFGHIESP-UHFFFAOYSA-L selenite(2-) Chemical compound [O-][Se]([O-])=O MCAHWIHFGHIESP-UHFFFAOYSA-L 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Definitions
- the present invention relates to a photoelectric conversion device having a polycrystalline semiconductor.
- photoelectric conversion device used for solar power generation or the like there is one in which a plurality of photoelectric conversion cells are provided on a substrate as described in, for example, Japanese Patent Application Laid-Open No. 2000-299486.
- the photoelectric conversion device is always required to improve the photoelectric conversion efficiency.
- the above photoelectric conversion device as one method for increasing the photoelectric conversion efficiency, it is conceivable to increase the crystal grains of the semiconductor layer which is a light absorption layer. However, if crystal grains in the semiconductor layer are enlarged, cracks are likely to occur in the semiconductor layer due to thermal stress or the like, and it is difficult to sufficiently increase the photoelectric conversion efficiency.
- a photoelectric conversion device includes an electrode layer, a first semiconductor layer including a polycrystalline semiconductor disposed on the electrode layer, and a first semiconductor layer disposed on the first semiconductor layer.
- the first semiconductor layer and a second semiconductor layer forming a pn junction are provided.
- the average grain size of the crystal grains in the first semiconductor layer is larger in the surface portion on the electrode layer side than the central portion in the stacking direction of the first semiconductor layer.
- the photoelectric conversion efficiency in the photoelectric conversion device is improved.
- FIG. 1 is a perspective view illustrating an example of a photoelectric conversion apparatus according to an embodiment of the present invention
- FIG. 2 is a cross-sectional view thereof.
- the photoelectric conversion device 11 a plurality of photoelectric conversion cells 10 are arranged on the substrate 1 and are electrically connected to each other.
- FIG. 1 only two photoelectric conversion cells 10 are shown for convenience of illustration. However, in the actual photoelectric conversion device 11, a large number of photoelectric conversions are performed in the horizontal direction of the drawing or in a direction perpendicular thereto.
- the cells 10 may be arranged in a plane (two-dimensionally).
- the lower electrode layer 2, the first semiconductor layer 3, the second semiconductor layer 4, and the upper electrode layer 5 constitute one photoelectric conversion cell 10, and the adjacent photoelectric conversion cells 10 are connected to each other through the connection conductor 7. By being connected in series, the high-power photoelectric conversion device 11 is obtained.
- the photoelectric conversion apparatus 11 in this embodiment assumes what enters light from the 2nd semiconductor layer 4 side, it is not limited to this, Light enters from the board
- the substrate 1 is for supporting the photoelectric conversion cell 10.
- Examples of the material used for the substrate 1 include glass, ceramics, resin, and metal.
- the lower electrode layer 2 (lower electrode layers 2a, 2b, 2c) is a conductor such as Mo, Al, Ti, or Au provided on the substrate 1.
- the lower electrode layer 2 is formed to a thickness of about 0.2 ⁇ m to 1 ⁇ m using a known thin film forming method such as sputtering or vapor deposition.
- the I-III-VI group compound is a compound of a group IB element (also referred to as a group 11 element), a group III-B element (also referred to as a group 13 element), and a group VI-B element.
- Examples of the I-III-VI group compound include CuInSe 2 (also called copper indium diselenide, CIS), Cu (In, Ga) Se 2 (also called copper indium diselenide / gallium, CIGS), Cu ( In, Ga) (Se, S) 2 (also referred to as diselene / copper indium / gallium / CIGSS).
- the first semiconductor layer 3 may be composed of a multi-component compound semiconductor thin film such as copper indium selenide / gallium having a thin film of selenite / copper indium sulfide / gallium as a surface layer.
- the I-II-IV-VI group compound is a compound of a group IB element, a group II-B element, a group IV-B element (also referred to as a group 14 element), and a group VI-B element.
- Examples of the I-II-IV-VI group compounds include Cu 2 ZnSnS 4 (also referred to as CZTS), Cu 2 ZnSn (S, Se) 4 (also referred to as CZTSSe), and Cu 2 ZnSnSe 4 (also referred to as CZTSe). Can be mentioned.
- the average grain size of the crystal grains of the first semiconductor layer 3 is larger in the surface portion on the lower electrode layer 2 side than the central portion in the thickness direction (stacking direction) of the first semiconductor layer 3. .
- the stress can be relieved at the center portion having relatively small crystal grains to reduce the occurrence of cracks and the like, and the surface portion on the lower electrode layer 2 side has relatively large crystal grains. Charge recombination at the interface can be suppressed, and charge transfer can be enhanced. As a result, the photoelectric conversion efficiency of the photoelectric conversion device 11 is increased.
- the average grain size of the crystal grains is obtained as follows, for example. First, an image (also referred to as a cross-sectional image) is obtained by photographing with a scanning electron microscope (SEM) at any 10 positions without deviation in the cross section of each of the three layers. Next, the average particle size is obtained by measuring the particle size of a plurality of particles using image processing software or the like for the electronic data of the image or the data obtained by scanning the image photograph with a scanner, and calculating the average value of these particles. calculate.
- SEM scanning electron microscope
- the average grain size of the crystal grains in the surface portion of the first semiconductor layer 3 on the lower electrode layer 2 side is, for example, 100 It may be ⁇ 500 nm. Further, the average grain size of the crystal grains in the central portion may be 0.2 to 0.5 times the average grain size of the surface portion on the lower electrode layer 2 side.
- the average grain size of the crystal grains in the first semiconductor layer 3 may gradually increase from the center toward the lower electrode layer 2.
- FIG. 3 shows an example of the distribution of the average grain size of crystal grains in the thickness direction of the first semiconductor layer 3.
- the horizontal axis indicates the distance from the lower electrode layer 2
- the vertical axis indicates the average grain size of the crystal grains.
- the distribution in the thickness direction of the average grain size of the crystal grains can be obtained by dividing the first semiconductor layer 3 into a plurality of layers in the thickness direction and measuring the average grain size of each layer.
- the second semiconductor layer 4 is a semiconductor layer having a second conductivity type different from that of the first semiconductor layer 3.
- a photoelectric conversion layer from which charges can be favorably extracted is formed.
- the first semiconductor layer 3 is p-type
- the second semiconductor layer 4 is n-type.
- the first semiconductor layer 3 may be n-type and the second semiconductor layer 4 may be p-type.
- a high-resistance buffer layer may be interposed between the first semiconductor layer 3 and the second semiconductor layer 4.
- the second semiconductor layer 4 includes CdS, ZnS, ZnO, In 2 S 3 , In 2 Se 3 , In (OH, S), (Zn, In) (Se, OH), and (Zn, Mg) O. Etc.
- the second semiconductor layer 4 is formed with a thickness of 10 to 200 nm by, for example, a chemical bath deposition (CBD) method or the like.
- CBD chemical bath deposition
- In (OH, S) refers to a mixed crystal compound containing In as a hydroxide and a sulfide.
- Zn, In) (Se, OH) refers to a mixed crystal compound containing Zn and In as selenides and hydroxides.
- (Zn, Mg) O refers to a compound containing Zn and Mg as oxides.
- an upper electrode layer 5 may be further provided on the second semiconductor layer 4.
- the upper electrode layer 5 is a layer having a lower resistivity than the second semiconductor layer 4, and it is possible to take out charges generated in the first semiconductor layer 3 and the second semiconductor layer 4 satisfactorily.
- the resistivity of the upper electrode layer 5 may be less than 1 ⁇ ⁇ cm and the sheet resistance may be 50 ⁇ / ⁇ or less.
- the upper electrode layer 5 is a 0.05 to 3 ⁇ m transparent conductive film made of, for example, ITO or ZnO.
- the upper electrode layer 5 may be composed of a semiconductor having the same conductivity type as the second semiconductor layer 4.
- the upper electrode layer 5 can be formed by sputtering, vapor deposition, chemical vapor deposition (CVD), or the like.
- a collecting electrode 8 may be further formed on the upper electrode layer 5.
- the current collecting electrode 8 is for taking out charges generated in the first semiconductor layer 3 and the second semiconductor layer 4 more satisfactorily.
- the collector electrode 8 is formed in a linear shape from one end of the photoelectric conversion cell 10 to the connection conductor 7.
- the current generated in the first semiconductor layer 3 and the fourth semiconductor layer 4 is collected to the current collecting electrode 8 via the upper electrode layer 5, and to the adjacent photoelectric conversion cell 10 via the connection conductor 7. It is energized well.
- the collecting electrode 8 may have a width of 50 to 400 ⁇ m from the viewpoint of increasing the light transmittance to the first semiconductor layer 3 and having good conductivity.
- the current collecting electrode 8 may have a plurality of branched portions.
- connection conductor 7 is a conductor provided in a groove that penetrates the first semiconductor layer 3, the second semiconductor layer 4, and the second electrode layer 5.
- the connection conductor 7 can be made of metal, conductive paste, or the like.
- the collector electrode 8 is extended to form the connection conductor 7, but the present invention is not limited to this.
- the upper electrode layer 5 may be stretched.
- the photoelectric conversion device 11 having the above configuration will be described.
- the first semiconductor layer 3 is CIGS will be described.
- the lower electrode layer 2 made of Mo or the like is formed in a desired pattern on the main surface of the substrate 1 made of glass or the like by using a sputtering method or the like.
- this precursor layer is subjected to heat treatment at 500 to 600 ° C.
- the portion of the precursor layer on the lower electrode layer 2 side is actively heat-treated by irradiating infrared light from the substrate 1 side with an IR lamp.
- the first semiconductor layer 3 having a larger average particle diameter is formed on the surface portion on the lower electrode layer 2 side than on the central portion in the thickness direction.
- the second semiconductor layer 4 and the upper electrode layer 5 are sequentially formed on the first semiconductor layer 3 by a CBD method, a sputtering method, or the like. Then, the first semiconductor layer 3, the second semiconductor layer 4, and the upper electrode layer 5 are processed by mechanical scribing or the like, and a groove for the connection conductor 7 is formed.
- the average grain size of the crystal grains in the first semiconductor layer 3 may be larger in the surface portion on the second semiconductor layer 4 side than in the central portion in the thickness direction of the first semiconductor layer 3. .
- the photoelectric conversion efficiency of the photoelectric conversion device 11 can be further increased.
- the average grain size of the crystal grains in the first semiconductor layer 3 gradually increases from the center toward the second semiconductor layer 4, It is possible to satisfactorily suppress the occurrence of distortion in 4 shows the distribution of the average grain size of the crystal grains in the thickness direction of the first semiconductor layer 3, as in FIG.
- the first semiconductor layer 3 When the first semiconductor layer 3 is formed by heating the above-described precursor layer, the first semiconductor layer 3 can be formed from an IR lamp from the surface of the precursor layer opposite to the lower electrode layer 2. By being irradiated with infrared light, the first semiconductor layer 3 having a larger average particle diameter is formed on the surface portion on the second semiconductor layer 4 side than on the central portion in the thickness direction.
- FIG. 5 An example of such a cross-sectional photograph of the first semiconductor layer 3 is shown in FIG.
- Mo is used as the lower electrode layer 2
- CIGS is used as the first semiconductor layer 3
- In (as it is difficult to confirm because it is thin in FIG. 5) is
- In ( OH, S) is a cross section of the photoelectric conversion device 11 in which AZO is used as a transparent conductive film.
- first semiconductor layer 4 second semiconductor layer 7: connection conductor 10: photoelectric conversion cell 11: photoelectric conversion device
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Abstract
Description
図1は、本発明の一実施形態に係る光電変換装置の一例を示す斜視図であり、図2はその断面図である。光電変換装置11は、基板1上に複数の光電変換セル10が並べられて互いに電気的に接続されている。なお、図1においては図示の都合上、2つの光電変換セル10のみを示しているが、実際の光電変換装置11においては、図面左右方向、あるいはさらにこれに垂直な方向に、多数の光電変換セル10が平面的に(2次元的に)配設されていてもよい。
次に、上記構成を有する光電変換装置11の製造方法について説明する。ここでは第1の半導体層3がCIGSの場合について説明する。まず、ガラス等から成る基板1の主面に、スパッタリング法等が用いられてMo等から成る下部電極層2が所望のパターンに形成される。
なお、本発明は上述の実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良などが可能である。
2、2a、2b、2c:下部電極層
3:第1の半導体層
4:第2の半導体層
7:接続導体
10:光電変換セル
11:光電変換装置
Claims (6)
- 電極層と、
該電極層上に配置された、多結晶半導体を含む第1の半導体層と、
該第1の半導体層上に配置された、該第1の半導体層とpn接合を形成する第2の半導体層とを備えており、
前記第1の半導体層における結晶粒の平均粒径は、前記第1の半導体層の積層方向の中央部よりも前記電極層側の表面部の方で大きくなっていることを特徴とする光電変換装置。 - 前記第1の半導体層における結晶粒の平均粒径は、前記中央部よりも前記第2の半導体層側の表面部の方で大きくなっていることを特徴とする請求項1に記載の光電変換装置。
- 前記第1の半導体層における結晶粒の平均粒径は、前記中央部から前記電極層に向かって漸次大きくなっていることを特徴とする請求項1または2に記載の光電変換装置。
- 前記第1の半導体層における結晶粒の平均粒径は、前記中央部から前記第2の半導体層に向かって漸次大きくなっていることを特徴とする請求項2に記載の光電変換装置。
- 前記第1の半導体層における結晶粒の平均粒径は、前記中央部から前記電極層に向かって漸次大きくなっていることを特徴とする請求項4に記載の光電変換装置。
- 前記第1の半導体層はI-III-VI族化合物からなる、請求項1乃至5のいずれかに記載の光電変換装置。
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US14/375,126 US9698288B2 (en) | 2012-01-27 | 2012-12-25 | Photoelectric conversion device |
EP12866499.2A EP2808902A4 (en) | 2012-01-27 | 2012-12-25 | PHOTOELECTRIC CONVERSION DEVICE |
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JP2014123720A (ja) * | 2012-11-20 | 2014-07-03 | Toshiba Corp | 光電変換素子、光電変換素子の製造方法及び太陽電池 |
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JP2011249560A (ja) * | 2010-05-27 | 2011-12-08 | Kyocera Corp | 半導体層の製造方法および光電変換装置の製造方法 |
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JPH07258881A (ja) * | 1994-03-23 | 1995-10-09 | Yazaki Corp | CuInSe2 膜の製造方法 |
JP2000299486A (ja) | 1999-04-12 | 2000-10-24 | Honda Motor Co Ltd | 太陽電池 |
JP2011249560A (ja) * | 2010-05-27 | 2011-12-08 | Kyocera Corp | 半導体層の製造方法および光電変換装置の製造方法 |
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JP2014123720A (ja) * | 2012-11-20 | 2014-07-03 | Toshiba Corp | 光電変換素子、光電変換素子の製造方法及び太陽電池 |
US9705018B2 (en) | 2012-11-20 | 2017-07-11 | Kabushiki Kaisha Toshiba | Photoelectric conversion element, method for manufacturing photoelectric conversion element, and solar cell |
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JP5813139B2 (ja) | 2015-11-17 |
US9698288B2 (en) | 2017-07-04 |
EP2808902A4 (en) | 2015-09-23 |
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