WO2013046545A1 - 発光装置の製造方法および発光装置 - Google Patents
発光装置の製造方法および発光装置 Download PDFInfo
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- WO2013046545A1 WO2013046545A1 PCT/JP2012/005604 JP2012005604W WO2013046545A1 WO 2013046545 A1 WO2013046545 A1 WO 2013046545A1 JP 2012005604 W JP2012005604 W JP 2012005604W WO 2013046545 A1 WO2013046545 A1 WO 2013046545A1
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- Prior art keywords
- light emitting
- substrate
- groove
- sealing film
- emitting device
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
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- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
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- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H10K71/851—Division of substrate
Definitions
- the present invention relates to a method for manufacturing a light-emitting device such as an organic EL (Electro-Luminescence) device, and more particularly to improvement of a sealing technique for preventing deterioration due to moisture or oxygen.
- a light-emitting device such as an organic EL (Electro-Luminescence) device
- the organic EL device includes a substrate and a light emitting structure having a laminated structure of an anode, a light emitting layer, and a cathode formed on the substrate, and when a voltage is applied between the anode and the cathode, A current flows to emit light.
- the light emitting structure has a multilayer structure.
- the materials constituting each layer include materials that are easily deteriorated by moisture and oxygen. Therefore, in an organic EL device, in order to prevent moisture and oxygen from entering from the outside, it is general to cover a light emitting structure formed on a substrate with a sealing film.
- Patent Document 1 describes that a substrate protective film made of alumina is formed on a resin substrate, an organic EL structure is formed on the protective film, and a device protective film made of alumina is formed on the organic EL structure. (Paragraphs 0044 to 0059). And it is described that the deterioration of the organic EL structure can be prevented by forming these protective films (paragraphs 0064 and 0067).
- Patent Document 2 describes that an organic EL panel is inserted into a bag-shaped plastic film in which a sealing film having a gas barrier property is formed, and the plastic film is vacuum-bonded in that state. (Paragraphs 0025-0032). It is described that this can prevent deterioration of the organic EL panel (paragraph 0038).
- the multi-chamfering method is a method in which a plurality of elements are simultaneously formed on a large-sized substrate and then the substrate is cut for each element.
- the multi-chamfer method is applied to the organic EL device, a plurality of light emitting structures are formed on a large substrate, a sealing film covering the plurality of light emitting structures is formed, and the sealing film is formed.
- the substrate is cut for each light emitting structure. In this way, since a large substrate is handled in the step of forming the light emitting structure, the productivity of the organic EL device can be improved.
- the substrate is cut without taking any measures, the interface between the substrate and the sealing film is exposed at the cut surface, and there is a problem that moisture and oxygen easily enter from this interface.
- stress is applied to the substrate and the sealing film, so that the interface between them tends to be peeled off, which tends to be a moisture or oxygen intrusion route.
- a method of forming the sealing film after cutting the substrate to cover the cut surfaces of the individual substrates after cutting with the sealing film is also conceivable.
- this method since the cut substrates are individually handled in the step of forming the sealing film, the productivity is reduced.
- an object of the present invention is to provide a technique capable of manufacturing a light-emitting device in which moisture and oxygen hardly enter without causing a decrease in productivity.
- a method for manufacturing a light-emitting device includes a step of forming a plurality of light-emitting structures in which a first electrode, a light-emitting layer, and a second electrode are stacked over a substrate; Forming a groove that individually surrounds the structure, forming a sealing film covering each light emitting structure and the groove that individually surrounds the light emitting structure, and a substrate on which the sealing film is formed And separating the substrate for each light emitting structure by cutting so that a portion covering the inner side surface of each groove in the sealing film on the light emitting structure side remains.
- the inner surface on the light emitting structure side of each groove formed on a large substrate becomes a part of the outer surface of each substrate after cutting.
- the sealing film is cut so that a portion covering the inner surface on the light emitting structure side of each groove remains, so that a part of the outer surface of each substrate is covered with the sealing film. Will be. Therefore, exposure of the interface between the substrate and the sealing film after cutting can be prevented, and a light emitting device into which moisture and oxygen hardly enter can be manufactured. Further, in the above method for manufacturing a light emitting device, since the sealing film is formed before the substrate is cut, the productivity is not reduced in the step of forming the sealing film. Therefore, a light-emitting device in which moisture and oxygen hardly enter without causing a decrease in productivity can be manufactured.
- sectional drawing which shows the structure of the light-emitting device concerning embodiment of this invention
- (a) is a general view
- (b) is an enlarged view of the A section
- (c) is an enlarged view of the B section.
- channel The figure for demonstrating the modification regarding the area
- channel The figure for demonstrating the modification regarding the depth of a groove
- disconnection The figure for demonstrating the modification of the position of a cutting
- channel The figure for demonstrating an additional sealing structure
- a method for manufacturing a light-emitting device includes a step of forming a plurality of light-emitting structures in which a first electrode, a light-emitting layer, and a second electrode are stacked over a substrate; Forming a groove that individually surrounds the structure, forming a sealing film covering each light emitting structure and the groove that individually surrounds the light emitting structure, and a substrate on which the sealing film is formed And separating the substrate for each light emitting structure by cutting so that a portion covering the inner side surface of each groove in the sealing film on the light emitting structure side remains.
- the inner surface on the light emitting structure side of each groove formed on a large substrate becomes a part of the outer surface of each substrate after cutting.
- the sealing film is cut so that the portion covering the inner surface of the light emitting structure of each groove remains, so that a part of the outer surface of the substrate after cutting is the sealing film. Will be covered. Therefore, exposure of the interface between the substrate and the sealing film after cutting can be prevented, and a light emitting device into which moisture and oxygen hardly enter can be manufactured. Further, in the above method for manufacturing a light emitting device, since the sealing film is formed before the substrate is cut, the productivity is not reduced in the step of forming the sealing film. Therefore, a light-emitting device in which moisture and oxygen hardly enter without causing a decrease in productivity can be manufactured.
- the substrate is cut along the groove at a position closer to the center in the width direction of the groove than the inner surface of the groove on the light emitting structure side. It is good also as leaving the part which coat
- the substrate may be cut with a width narrower than the width of each groove.
- the substrate includes a resin film, a gas barrier layer formed on the resin film, and a base layer formed on the gas barrier layer and having each light emitting structure formed on an upper surface thereof to form the groove.
- the depth of the groove may be adjusted so that the bottom surface of each groove reaches at least the gas barrier layer.
- the sealing film may be formed by an atomic layer deposition method.
- a light-emitting device includes a substrate, a light-emitting structure formed over the substrate, in which a first electrode, a light-emitting layer, and a second electrode are stacked, and a seal that covers the light-emitting structure.
- a sealing film, and the substrate has a flange portion projecting outwardly on the outer surface of the substrate, and the sealing film extends to the flange portion of the outer surface of the substrate. The upper region is covered.
- FIG. 1 is a cross-sectional view showing the structure of a light emitting device according to an embodiment of the present invention, where (a) is an overall view, (b) is an enlarged view of part A, and (c) is an enlarged view of part B. is there.
- the light emitting device 100 is a top emission type organic EL display.
- the light emitting device 100 includes a substrate 10, a light emitting structure 20 formed on the substrate 10, and a sealing film 30 that seals the light emitting structure 20.
- the substrate 10 includes a resin film 11, a gas barrier layer 12, and a TFT (Thin Film Transistor) layer 13.
- the resin film 11 is made of a resin such as polyimide, for example.
- the gas barrier layer 12 is formed on the resin film 11 and is made of a material having gas barrier properties such as silicon nitride.
- the TFT layer 13 is formed on the gas barrier layer 12 and has a drive circuit provided for each pixel.
- the light emitting structure 20 includes an anode layer 21, a light emitting layer 22, a cathode layer 23, a sealing layer 24, a resin layer 25, and a resin film 26.
- the anode layer 21 is made of a material having conductivity and light reflectivity. Examples of such a material include aluminum or an aluminum alloy.
- the light emitting layer 22 is sandwiched between the anode layer 21 and the cathode layer 23, and emits light when a current flows when a voltage is applied between the anode layer 21 and the cathode layer 23.
- FIG. 1B is an enlarged view of the A portion, and shows three pixels.
- the light emitting layer 22 includes at least an organic EL layer, and includes various functional layers such as a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer as necessary.
- the light emitting layer 22 includes hole injection layers 222a, 222b, 222c, hole transport layers 223a, 223b, 223c, organic EL layers 224a, 224b, 224c, and an electron transport layer 225.
- some or all of the layers included in the light emitting layer 22 are partitioned for each pixel by a partition as necessary.
- the hole injection layers 222 a, 222 b and 222 c, the hole transport layers 223 a, 223 b and 223 c and the organic EL layers 224 a, 224 b and 224 c are partitioned by the partition 221.
- the cathode layer 23 is made of a material having conductivity and light transmittance. Examples of such materials include ITO (Indium (Tin Oxide) and IZO (Indium Zinc Oxide).
- the sealing layer 24 covers a laminated structure including the anode layer 21, the light emitting layer 22, and the cathode layer 23, and is made of a material having gas barrier properties such as silicon nitride.
- the resin layer 25 is formed on the sealing layer 24 and is made of, for example, a resin such as epoxy.
- the resin film 26 is made of, for example, a resin such as polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or cycloolefin polymer (COP), and has flexibility and insulating properties.
- the sealing film 30 is made of a material having gas barrier properties such as alumina (Al 2 O 3 ), silicon nitride, and the like.
- the sealing film 30 covers the light emitting structure 20 and extends to the outer surface of the substrate 10. Covers the area.
- FIG.1 (c) is an enlarged view of the B section.
- substrate 10 has the collar part 10e protruded outward from the outer surface over the perimeter.
- the sealing film 30 extends from the upper surface 10a of the substrate along the outer surface 10b and reaches the upper surface 10c of the flange portion 10e. Note that the outer surface 10 d of the flange portion 10 e is not covered with the sealing film 30.
- substrate 10 and the sealing film 30 exposed to the light emitting structure 20 can be lengthened, and sealing property can be improved.
- mechanical or thermal stress is applied to the cut surface when the substrate is cut, and the peeling of the sealing film 30 proceeds by a certain distance from the cut surface. May end up.
- the peeling of the sealing film 30 can be made difficult to reach the light emitting structure 20.
- a large substrate 110 is prepared, and light emitting structures 120a, 120b, 120c, 120d,... Are formed on the substrate 110 (FIG. 2A).
- the substrate 110 includes a resin film 111, a gas barrier layer 112, and a TFT layer 113.
- the substrate 110 has an area where a plurality of light emitting structures can be formed.
- Each light emitting structure includes an anode layer 121, a light emitting layer 122, a cathode layer 123, a sealing layer 124, a resin layer 125, and a resin film 126.
- Each layer can be formed by a known technique.
- FIG. 3 is a plan view of the substrate 110 in a state where grooves are formed.
- the light emitting structure 120b is surrounded by four grooves, ie, grooves 114a and 114b extending in the vertical direction and grooves 114d and 114e extending in the horizontal direction.
- the adjacent light emitting structure 120c is surrounded by four grooves, ie, grooves 114b and 114c extending in the vertical direction and grooves 114d and 114e extending in the horizontal direction.
- each light emitting structure is individually surrounded by the four grooves around it.
- the depth of the groove is substantially constant over the entire area of the groove, the bottom of the groove reaches the resin film 111, and penetrates the substrate 110. The depth is not set.
- the groove width Wa is, for example, about several ⁇ m to several mm.
- the groove can be formed by a physical process such as machining with a blade or a laser, or by a chemical process such as etching.
- a sealing film 130 is formed on the entire surface of the substrate 110 (FIG. 4A).
- the thickness of the sealing film is, for example, about several nm to several hundred nm.
- the sealing film 130 is formed without interruption from the upper surface of the substrate 110 to the bottom surface of the groove along the inner surface of the groove.
- the sealing film 130 can be formed by, for example, an ALD (Atomic Layer Deposition) method, a CVD (Chemical Layer Deposition) method, a coating method, or the like.
- the ALD method is known as a film forming method having a good step coverage (Step Coverage), and is a good method for improving the sealing property.
- a cutter 51 having a blade width Wb narrower than the groove width Wa is prepared (FIG. 4B), and the substrate 110 is cut along the groove at the approximate center of each groove using the cutter 51 (FIG. 4). 4 (c)).
- substrate 110 is isolate
- a portion of the sealing film 130 that covers the inner surface 110b of each groove on the light emitting structure side remains.
- the inner side surface 110b on the light emitting structure side of each groove formed in the substrate 110 becomes a part of the outer side surface in each cut substrate.
- the sealing film 130 is cut so that the portion covering the inner surface of the light emitting structure in each groove remains, so that a part of the outer surface of each substrate is sealed. It will be covered with. Therefore, exposure of the interface between the substrate and the sealing film 130 can be prevented, and a light-emitting device in which moisture and oxygen hardly enter can be manufactured.
- the sealing film 130 is formed before the substrate 110 is cut, the productivity is not reduced in the process of forming the sealing film 130. Therefore, a light-emitting device in which moisture and oxygen hardly enter without causing a decrease in productivity can be manufactured.
- the substrate 110 is cut by the cutter 51, mechanical or thermal stress is applied to the cut surface, and the peeling of the sealing film 130 may proceed a certain distance from the cut surface.
- peeling of the sealing film 130 can be made difficult to reach the light emitting structure.
- the sealing film is a thin film along the inner side surface and the bottom surface of the groove.
- light emitting structures 120a, 120b, 120c, 120d... are formed on the substrate 110, and grooves 214a, 214b, 214c... Surrounding the light emitting structures are formed (FIG. 5A).
- a sealing film 230 is formed over the entire surface of the substrate 110 (FIG. 5B). At this time, the sealing film 230 is formed so as to fill the insides of the grooves 214a, 214b, and 214c. This may occur, for example, when the groove width is relatively narrow or when the sealing film is formed by coating.
- a cutter 52 having a blade width Wd narrower than the groove width Wc is prepared (FIG.
- the substrate 110 is cut along the groove at the approximate center of each groove using the cutter 52 (FIG. 5). 5 (d)).
- substrate 110 is isolate
- the sealing film 230 can be cut so that a portion covering the inner surface of the light emitting structure in each groove remains.
- the sealing film 30 covers the entire side surface of the gas barrier layer 12 as shown in FIG.
- the present invention is not limited to this as long as the sealing film 30 reaches a layer having a gas barrier property.
- the upper surface 10 c of the collar portion is located on the gas barrier layer 12, and the sealing film 30 reaches the gas barrier layer 12. Even in such a case, since the sealing film 30 and the gas barrier layer 12 are in close contact with each other, the sealing performance can be improved.
- the configuration is as shown in FIG.
- the substrate 10 includes the glass substrate 16 and the TFT layer 13, and the sealing film 30 reaches the glass substrate 16.
- the bottom surface of each groove may reach the gas barrier layer.
- a groove extending vertically and a groove extending horizontally are formed one by one between the light emitting structures.
- annular grooves 314a, 314b, 314c, 314d, 314e, 314f, 314g, 314h,... May be formed around the light emitting structure.
- the light emitting structure 120b is surrounded by the annular groove 314b.
- two grooves extending vertically and two grooves extending horizontally may be formed between the light emitting structures.
- the light emitting structure 120b is surrounded by four grooves, the grooves 415a and 414b extending in the vertical direction and the grooves 415d and 414e extending in the horizontal direction.
- the adjacent light emitting structure 120c is surrounded by four grooves, ie, grooves 415b and 414c extending in the vertical direction and grooves 415d and 414e extending in the horizontal direction.
- the depth of the groove is substantially constant over the entire groove and does not penetrate the substrate. Not exclusively.
- the depth of the groove may partially vary, and a part of the groove may penetrate the substrate.
- through-holes 515 are formed in places of the grooves 514a, 514b, 514c, 514d, 514e, and 514f. This can be realized, for example, by forming the groove with a perforated cutter.
- the ratio of the through holes is relatively large in the grooves 614a, 614b, 614c, 614d, 614e, and 614f.
- one of the inner surfaces of the grooves is an inner surface on the one light emitting structure side, and the other is It becomes the inner surface on the side of another light emitting structure.
- one of the inner surfaces 110b of the groove 114a is an inner surface on the light emitting structure 120a side, and the other is an inner surface on the light emitting structure 120b side. Therefore, in order to leave the sealing films on the inner side surfaces of both light emitting structures, it is preferable to cut at approximately the center of each groove. However, as shown in FIGS. 9 and 10, when two grooves are formed between the light emitting structures, it is not necessary to cut at substantially the center.
- the light emitting structures 120a, 120b, 120c, 120d,... are formed on the substrate 110, and the grooves 714a, 715a, 714b, 715b, 714c, 715c,... Are formed between the light emitting structures (FIG. 9A). ).
- Two grooves with a width We are formed between the light emitting structures, and the two grooves are separated by a width Wf.
- a sealing film 730 is formed over the entire surface of the substrate 110 (FIG. 9B).
- a cutter 53 having a blade width Wg satisfying the condition of Wf ⁇ Wg ⁇ 2We + Wf is prepared (FIG. 9C), and the substrate 110 is cut between the two grooves using the cutter 53 (FIG. 9). (D)).
- a cutter 54 whose blade width Wh is narrower than the groove width We is prepared (FIG. 10C), and the substrate 110 is cut at a position deviated from the approximate center of the groove using the cutter 54 (FIG. d)).
- the inner side surface 110b of each groove is the inner side surface on the light emitting structure side, but the inner side surface 110f is not the inner side surface on the light emitting structure side. Therefore, a portion of the sealing film 730 that covers the inner side surface 110b needs to remain, but a portion that covers the inner side surface 110f does not need to remain. In such a case, the sealing film that covers the inner surface on the light emitting structure side can be left without being cut at substantially the center of each groove.
- the cross-sectional shape of the groove is rectangular, and the angle formed by the upper surface of the substrate and the inner surface of the groove is substantially perpendicular, but this is not restrictive.
- the inner surface of the groove may be an inclined surface by making the cross-sectional shape of the groove V-shaped or inverted trapezoidal. Thereby, the coverage of the sealing film can be increased.
- the groove is cut with a blade, but the present invention is not limited to this.
- it may be cut by a physical process such as laser processing or a chemical process such as etching.
- the groove is formed after the light emitting structure is formed on the substrate.
- the light emitting structure may be formed after the groove is formed in the substrate.
- grooves 114a, 114b, 114c,... That individually surround the regions 140a, 140b, 140c, 140d,... On the substrate 110 are formed (FIG. 11A).
- the regions 140a, 140b, 140c, 140d,... Are regions where the light emitting structures 120a, 120b, 120c, 120d,.
- light emitting structures 120a, 120b, 120c, 120d,... are formed in the regions 140a, 140b, 140c, 140d,... On the substrate 110, respectively (FIG. 11B).
- the subsequent steps are the same as in the embodiment.
- a groove may be formed after forming a part of the layer of the light emitting structure on the substrate, and then the remaining layer of the light emitting structure may be formed.
- the light emitting structure is sealed with the gas barrier layer 12 and the sealing film 30, but may further include an additional sealing structure.
- the light emitting device 100 is inserted into a bag-shaped resin film 41 having a gas barrier layer formed therein, and the resin film 41 is vacuum-bonded in that state. Power supply to the light emitting device 100 is performed by the external lead 42.
- a touch panel electrode 43 is formed on the upper surface 41 a of the resin film 41.
- the touch panel electrode 43 is formed on the lower surface 41 b of the resin film 41.
- the light-emitting device is described as an organic EL display.
- the present invention is not limited to this as long as the light-emitting device requires sealing.
- the light emitting device can also be applied to organic EL lighting.
- the organic EL display also has a top emission type, a bottom emission type, a double-sided light emission type, etc. depending on the light extraction method, and an active matrix type or a passive matrix type depending on the driving method. It is also applicable to types.
- the present invention can be used for displays and lighting.
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Abstract
Description
本発明の一態様に係る発光装置の製造方法は、基板上に、第1電極と発光層と第2電極とが積層された発光構造体を複数形成する工程と、前記基板上に、各発光構造体を個々に囲む溝を形成する工程と、前記基板上に、各発光構造体とそれらを個々に囲む溝を被覆する封止膜を形成する工程と、前記封止膜が形成された基板を、前記封止膜における各溝の発光構造体側の内側面を被覆する部分が残存するように切断することにより、前記基板を発光構造体毎に分離する工程とを含む。
本発明を実施するための形態を、図面を参照して詳細に説明する。
次に、図2、図3、図4を用いて多面取りを採用した発光装置の製造方法を説明する。
(1)溝内の封止膜の形態に関する変形例
実施の形態では、封止膜は溝の内側面および底面に沿った薄い膜であるが、これに限らず、図5に示すように封止膜が溝内に充填されるような形態があり得る。
実施の形態では、図6(a)に示すように封止膜30がガスバリア層12の側面の全体を被覆している。しかしながら、封止膜30がガスバリア性のある層に達してさえいれば、これに限られない。例えば、図6(b)では、鍔部の上面10cがガスバリア層12に位置し、封止膜30がガスバリア層12に達している。このような場合でも、封止膜30とガスバリア層12とが密着しているので、封止性を高めることができる。
実施の形態では、縦に延びる溝と横に延びる溝が発光構造体間に1本ずつ形成されていたが、個々の発光構造体を囲むことができれば、これに限らない。例えば、図7(a)に示すように、発光構造体の周囲に環状の溝314a、314b、314c、314d、314e、314f、314g、314h・・・を形成してもよい。これによれば、例えば、発光構造体120bは、環状の溝314bにより囲まれる。また、図7(b)に示すように、縦に延びる溝と横に延びる溝を発光構造体間に2本ずつ形成してもよい。これによれば、発光構造体120bは、縦方向に延びた溝415a、414bおよび横方向に延びた溝415d、414eの4本の溝で囲まれている。また、その隣の発光構造体120cは、縦方向に延びた溝415b、414cおよび横方向に延びた溝415d、414eの4本の溝で囲まれている。
実施の形態では、溝の深さは溝の全体にわたり略一定で基板を貫通しない程度としているが、大判の基板を一括して取り扱うことさえできれば、これに限らない。例えば、溝の深さが部分的に変動し、その一部が基板を貫通していてもよい。図8(a)の例では、溝514a、514b、514c、514d、514e、514fの所々に貫通孔515が形成されている。これは、例えば、溝をミシン目カッターで形成することにより実現できる。また、図8(b)の例では、溝614a、614b、614c、614d、614e、614fのうち、貫通孔の占める割合が比較的大きい。
実施の形態では、発光構造体間に形成される溝が1本のみのため、溝の内側面のうち一方は一の発光構造体側の内側面となり、他方は別の発光構造体側の内側面となる。例えば、図4(b)において、溝114aの内側面110bの一方は発光構造体120a側の内側面となり、他方は発光構造体120b側の内側面となる。したがって、両方の発光構造体側の内側面の封止膜を残存させるには、各溝の略中央で切断するのが好ましい。しかしながら、図9、図10に示すように、発光構造体間に形成される溝が2本の場合は、略中央で切断しなくてもよい。
実施の形態では、溝の断面形状が矩形であり、基板の上面と溝の内側面との成す角度が略直角であるが、これに限らない。例えば、溝の断面形状をV字状、あるいは、逆台形状とすることで、溝の内側面を斜面としてもよい。これにより、封止膜のカバレッジを高めることができる。
実施の形態では、溝は刃物で切断することとしているが、これに限らない。例えば、レーザ加工のような物理的処理やエッチングのような化学的処理により切断してもよい。
実施の形態では、基板上に発光構造体を形成した後に溝を形成しているが、これに限らない。基板に溝を形成した後に発光構造体を形成してもよい。この場合、まず、基板110上の領域140a、140b、140c、140d・・・を個々に囲む溝114a、114b、114c・・・を形成する(図11(a))。領域140a、140b、140c、140d・・・は、それぞれ発光構造体120a、120b、120c、120d・・・が形成される予定の領域である。次に、基板110上の領域140a、140b、140c、140d・・・にそれぞれ、発光構造体120a、120b、120c、120d・・・を形成する(図11(b))。これ以降の工程は、実施の形態と同様である。
実施の形態では、発光構造体はガスバリア層12と封止膜30とで封止されているが、さらに追加的な封止構造を備えることとしてもよい。例えば、図12の例では、内部にガスバリア層が形成された袋状の樹脂フィルム41に、発光装置100を挿入し、その状態で樹脂フィルム41を真空圧着したものである。発光装置100への給電は外部リード42により為される。そして、タッチパネル用の電極43が樹脂フィルム41の上面41aに形成されている。なお、発光装置100がボトムエミッション型の場合、タッチパネル用の電極43は樹脂フィルム41の下面41bに形成される。
実施の形態では、発光装置が有機ELディスプレイであるとして説明しているが、封止を必要とする発光装置であれば、これに限らない。例えば、発光装置が有機EL照明でも適用可能である。また、有機ELディスプレイでも、光の取り出し方法によりトップエミッション型、ボトムエミッション型、両面発光型などのタイプがあり、また、駆動方法によりアクティブマトリクス型やパッシブマトリクス型などのタイプがあるが、何れのタイプにおいても適用可能である。
10a 基板の上面
10b 基板の外側面
10c 鍔部の上面
10d 切断面
10e 鍔部
11 樹脂フィルム
12 ガスバリア層
13 TFT層
16 ガラス基板
20 発光構造体
21 陽極層
22 発光層
23 陰極層
24 封止層
25 樹脂層
26 樹脂フィルム
30 封止膜
41 樹脂フィルム
42 外部リード
43 タッチパネル用の電極
51、52、53、54 カッター
100 発光装置
110 基板
120 発光構造体
221 隔壁
222a 正孔注入層
223a 正孔輸送層
224a 有機EL層
225 電子輸送層
110a~110d 発光装置
110b 溝の内側面
110f 溝の内側面
111 樹脂フィルム
112 ガスバリア層
113 TFT層
114a~114f 溝
120a~120h 発光構造体
121 陽極層
122 発光層
123 陰極層
124 封止層
125 樹脂層
126 樹脂フィルム
130 封止膜
214a~214c 溝
314a~314f 溝
414a~414f 溝
415a~415f 溝
514a~514f 溝
515 貫通孔
614a~614f 溝
714a~714c 溝
715a~715c 溝
Claims (8)
- 基板上に、第1電極と発光層と第2電極とが積層された発光構造体を複数形成する工程と、
前記基板上に、各発光構造体を個々に囲む溝を形成する工程と、
前記基板上に、各発光構造体とそれらを個々に囲む溝を被覆する封止膜を形成する工程と、
前記封止膜が形成された基板を、前記封止膜における各溝の発光構造体側の内側面を被覆する部分が残存するように切断することにより、前記基板を発光構造体毎に分離する工程と
を含む発光装置の製造方法。 - 複数の領域を個々に囲む溝が形成された基板を準備する工程と、
前記基板上の前記各領域に、第1電極と発光層と第2領域とが積層された発光構造体を形成する工程と、
前記基板上に、各発光構造体とそれらを個々に囲む溝を被覆する封止膜を形成する工程と、
前記封止膜が形成された基板を、前記封止膜における各溝の発光構造体側の内側面を被覆する部分が残存するように切断することにより、前記基板を発光構造体毎に分離する工程と
を含む発光装置の製造方法。 - 前記基板を分離する工程では、各溝の発光構造体側の内側面よりも溝の幅方向中央寄りの位置で溝に沿って前記基板を切断することにより、各溝の発光構造体側の内側面を被覆する部分を残存させる、請求項1または2に記載の発光装置の製造方法。
- 前記基板を分離する工程では、各溝の幅よりも狭い幅で前記基板を切断する、請求項3に記載の発光装置の製造方法。
- 前記基板は、樹脂フィルムと、前記樹脂フィルム上に形成されたガスバリア層と、前記ガスバリア層上に形成され上面に各発光構造体が形成される下地層とを含み、
前記溝を形成する工程では、各溝の底面が少なくともガスバリア層まで到達するように溝の深さを調整する、請求項1または2に記載の発光装置の製造方法。 - 前記封止膜は、原子層堆積法により形成される、請求項1または2に記載の発光装置の製造方法。
- 基板と、
前記基板上に形成された、第1電極と発光層と第2電極とが積層された発光構造体と、
前記発光構造体を被覆する封止膜と、を備え、
前記基板の外側面は、前記封止膜により被覆されている部分と被覆されていない部分とを有する、
発光装置。 - 基板と、
前記基板上に形成された、第1電極と発光層と第2電極とが積層された発光構造体と、
前記発光構造体を被覆する封止膜と、を備え、
前記基板は、前記基板の外側面に外向きに張り出した鍔部を有し、
前記封止膜は、前記基板の外側面の鍔部まで広がり前記外側面の鍔部よりも上側の領域を被覆している、
発光装置。
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JP2013535846A JP6175000B2 (ja) | 2011-09-26 | 2012-09-05 | 発光装置の製造方法 |
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US15/860,927 USRE48033E1 (en) | 2011-09-26 | 2018-01-03 | Method for manufacturing light emitting device, and light emitting device |
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USRE49168E1 (en) | 2022-08-09 |
JPWO2013046545A1 (ja) | 2015-03-26 |
CN103493589B (zh) | 2016-05-18 |
USRE48033E1 (en) | 2020-06-02 |
CN103493589A (zh) | 2014-01-01 |
JP6175000B2 (ja) | 2017-08-09 |
KR20140066974A (ko) | 2014-06-03 |
US20140034994A1 (en) | 2014-02-06 |
US9231156B2 (en) | 2016-01-05 |
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