WO2013011775A1 - 薄膜形成方法及び薄膜形成装置 - Google Patents
薄膜形成方法及び薄膜形成装置 Download PDFInfo
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- WO2013011775A1 WO2013011775A1 PCT/JP2012/065024 JP2012065024W WO2013011775A1 WO 2013011775 A1 WO2013011775 A1 WO 2013011775A1 JP 2012065024 W JP2012065024 W JP 2012065024W WO 2013011775 A1 WO2013011775 A1 WO 2013011775A1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0091—Apparatus for coating printed circuits using liquid non-metallic coating compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
- B05C9/12—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation being performed after the application
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09909—Special local insulating pattern, e.g. as dam around component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0756—Uses of liquids, e.g. rinsing, coating, dissolving
- H05K2203/0759—Forming a polymer layer by liquid coating, e.g. a non-metallic protective coating or an organic bonding layer
Definitions
- the present invention relates to a thin film forming method and a thin film forming apparatus for forming a thin film pattern by ejecting droplets of a thin film material toward a substrate.
- Patent Document 1 A technique for forming a thin film pattern on the surface of a substrate by discharging droplets containing a material for forming a thin film pattern from a nozzle head (inkjet head) is known (for example, Patent Document 1).
- a printed wiring board is used as a substrate and a solder resist is used as a thin film material.
- the printed wiring board includes a base material and wiring, and an electronic component or the like is soldered to a predetermined position.
- the solder resist exposes a conductor portion for soldering an electronic component or the like and covers a portion that does not require soldering. A region where a conductor portion is exposed for soldering an electronic component or the like is called a land.
- a light curable (for example, ultraviolet curable) liquid material is used as the thin film material.
- the thin film material droplets land on the substrate, the thin film material spreads in the in-plane direction.
- irregularities remain on the surface of the thin film corresponding to each of the droplets.
- the thin film material is formed at the edge of the region where the thin film pattern is formed by repeatedly landing the droplet of the thin film material on the edge of the region where the thin film pattern is formed on the surface of the substrate and curing of the landed thin film material.
- Forming an edge pattern comprising: Landing a droplet of thin film material on an internal region defined by an edge pattern;
- a thin film forming method including a step of curing a thin film material landed on the internal region.
- a thin film in the first region of the substrate whose surface is divided into a first region including an edge of a thin film pattern to be formed and a second region where a solid thin film is formed. Attaching a photocurable thin film material to the region to be formed; (B) after the step a, irradiating the thin film material attached to the first region of the substrate with light to cure the thin film material; (C) depositing the thin film material in the second region; (D) after the step c, irradiating the thin film material adhering to the second region substrate with light to cure the thin film material, and after adhering to the second region, There is provided a thin film forming method in which the time until the thin film material is irradiated with light in step d is longer than the time until the thin film material is irradiated with light in step b after being attached to the first region.
- a stage for holding a substrate Opposite the substrate held on the stage, the surface of the substrate is irradiated with a plurality of nozzle holes for discharging droplets of a photocurable thin film material, and the thin film material attached to the substrate is irradiated with curing light.
- a nozzle unit provided with a light source; A moving mechanism for moving one of the nozzle unit and the stage relative to the other in a direction parallel to the surface of the substrate;
- a control device storing image data of a thin film pattern to be formed on the substrate, The control device includes: Based on the image data, after the droplet of the thin film material has landed on the edge of the thin film pattern, the thin film material landed on the edge is irradiated with light from the light source to form an edge pattern, and then the thin film The movement mechanism, so that a droplet of the thin film material is landed inside a region where a pattern is formed, and the thin film material landed inside the region where the thin film is formed is irradiated with light from the light source, A thin film forming apparatus for controlling the nozzle unit and the light source is provided.
- a stage for holding a substrate A nozzle unit provided with a plurality of nozzle holes for discharging a liquid material having photocurability and insulation toward the substrate held on the stage and attaching the liquid material to the substrate; A moving mechanism for moving one of the stage and the nozzle unit in the Y direction parallel to the surface of the substrate with respect to the other; A first light source that is disposed away from the plurality of nozzle holes in the Y direction and cures the liquid material by irradiating the liquid material attached to the substrate with light; A second light source that is disposed further away from the first light source in the Y direction from the plurality of nozzle holes and that cures the liquid material by irradiating the liquid material attached to the substrate with light; A controller that stores image data defining a thin film pattern to be formed on the surface of the substrate, and controls the moving mechanism, the nozzle unit, and the first and second light sources based on the image data; With In the control device, the first light source cures the liquid material attached to the
- the thin film material that has landed on the edge of the thin film pattern is cured, when the droplet of the thin film material is landed on the area corresponding to the inside of the thin film pattern, the already cured thin film material is in the in-plane direction of the thin film material. To block the flow of water. For this reason, it is not necessary to immediately cure the thin film material that has landed on the region corresponding to the inside of the thin film pattern.
- the thin film material can be cured after spreading in the in-plane direction. Thereby, the surface inside a thin film pattern can be made flat.
- FIG. 1 is a side view of a thin film forming apparatus according to a first embodiment.
- 2A is a perspective view of a nozzle unit used in the thin film forming apparatus according to Embodiment 1
- FIG. 2B is a bottom view of the nozzle unit.
- FIG. 3 is a plan view of a substrate having a thin film pattern formed by the thin film forming method according to the first embodiment and a nozzle unit.
- 4A is a plan view of the substrate and the nozzle unit before and after the first scanning of the thin film forming method according to Example 1
- FIG. 4B is a cross-sectional view taken along one-dot chain line 4B-4B in FIG. 4A, and FIG. FIG.
- FIG. 4D is a plan view of the substrate and the nozzle unit before and after the second scanning of the thin film forming method according to the first embodiment, and FIG. 4D is a cross-sectional view taken along one-dot chain line 4D-4D in FIG. 4C.
- 4E is a plan view of the substrate and the nozzle unit before and after the third scan of the thin film forming method according to Example 1
- FIG. 4F is a cross-sectional view taken along one-dot chain line 4F-4F in FIG. 4E
- FIGS. 4A and 4B are plan views of the substrate and the nozzle unit before and after the fourth scan of the thin film forming method according to Embodiment 1, and FIG.
- FIG. 4H is a cross-sectional view taken along one-dot chain line 4H-4H in FIG. 4G.
- 4I is a plan view of the substrate and the nozzle unit before and after the fifth scan of the thin film formation method according to Example 1
- FIG. 4J is a cross-sectional view taken along one-dot chain line 4J-4J in FIG. 4I
- FIG. 4L is a plan view of the substrate and the nozzle unit before and after the sixth scan of the thin film forming method according to Embodiment 1
- FIG. 4L is a cross-sectional view taken along one-dot chain line 4L-4L in FIG. 4K. 5A, FIG. 5B, and FIG.
- FIG. 5C are a sectional view taken along one-dot chain line 5A-5A in FIG. 4A, a sectional view taken along one-dot chain line 5B-5B in FIG. 4E, and a sectional view taken along one-dot chain line 5C-5C in FIG. 6A and 6B are cross-sectional views of thin film patterns formed by the method according to Comparative Example and Example 1, respectively.
- 7A is a plan view of the substrate and the nozzle unit before and after the second scanning of the thin film forming method according to the second embodiment.
- FIG. 7B is a plan view of the substrate and the nozzle unit before and after the third scanning of the thin film forming method according to the second embodiment. It is a top view of a nozzle unit.
- FIG. 7C is a plan view of the substrate and the nozzle unit before and after the fourth scan of the thin film forming method according to the second embodiment.
- FIG. 7D is a plan view of the substrate and the nozzle unit before and after the fifth scan of the thin film forming method according to the second embodiment. It is a top view of a nozzle unit.
- FIG. 7E is a plan view of the substrate and the nozzle unit before and after the sixth scan of the thin film formation method according to the second embodiment.
- 8A is a plan view of the substrate and the nozzle unit before and after the first scanning of the thin film forming method according to Example 3
- FIG. 8B is a plan view of the substrate and the nozzle before and after the second scanning of the thin film forming method according to Example 3.
- FIG. 8C is a plan view of the substrate and the nozzle unit before and after the third scan of the thin film formation method according to Example 3, and FIG. 8D shows the substrate and the nozzle unit before and after the fourth scan of the thin film formation method according to Example 3.
- FIG. 9 is a plan view of the nozzle unit of the thin film forming apparatus according to the fourth embodiment.
- FIG. 10A is a plan view of the substrate and the nozzle unit before and after the first scan of the thin film formation method according to the fourth embodiment.
- FIG. 10B is a plan view of the substrate and the nozzle unit before and after the second scanning of the thin film forming method according to the fourth embodiment.
- FIG. 10A is a plan view of the substrate and the nozzle unit before and after the first scan of the thin film formation method according to the fourth embodiment.
- FIG. 10B is a plan view of the substrate and the nozzle unit before and after the second scanning of the thin film forming method according to the fourth embodiment.
- FIG. 10C is a plan view of the substrate and the nozzle unit before and after the third scan of the thin film forming method according to the fourth embodiment.
- FIG. 11 is a bottom view of the nozzle unit used in the evaluation experiment of Example 5.
- FIG. FIG. 12 is a partial side view of the thin film forming apparatus according to the fifth embodiment.
- 13A is a plan view of a thin film pattern and a nozzle unit formed on a substrate
- FIGS. 13B and 13C are cross-sectional views taken along one-dot chain line 13-13 in FIG. 13A.
- FIG. 14 is a bottom view of the nozzle unit according to the fifth embodiment.
- 15A and 15B are side views of the nozzle unit and the substrate when the thin film pattern is formed by the method according to the fifth embodiment.
- FIG. 16A is a plan view of a thin film pattern and a nozzle unit formed on a substrate by the method according to Example 5, and FIG. 16B is a cross-sectional view taken along one-dot chain line 16B-16B in FIG. 16A.
- 17A and 17B are plan views of a nozzle unit and a substrate according to a modification of the fifth embodiment.
- 18A and 18B are side views of the nozzle unit and the substrate when a thin film pattern is formed by the method according to Example 6, and
- FIG. 18C is a thin film pattern formed by the method according to a modification of Example 6. It is a side view of a nozzle unit and a board
- FIG. 19A is a plan view of a thin film pattern and a nozzle unit formed on a substrate by the method according to Example 6, and FIG. 19B is a cross-sectional view taken along one-dot chain line 19B-19B in FIG. 19A.
- FIG. 20 is a plan view of a thin film pattern formed by a method according to a modification of Example 6 and a nozzle unit.
- 21A to 21D are cross-sectional views of a semiconductor device manufactured by the method according to Example 7 in the middle of manufacturing.
- 22A and 22B are bottom views showing the arrangement of the nozzle heads of the thin film forming apparatus according to the eighth embodiment and its modification, respectively.
- FIG. 23 is a bottom view showing the arrangement of the nozzle head of the thin film forming apparatus according to the ninth embodiment.
- FIG. 24A, FIG. 24B, FIG. 24C, and FIG. 24D show edge patterns after the first, second, third, and fourth scans, respectively, when forming a thin edge pattern using the thin film forming apparatus according to Example 9. It is a top view which shows the pixel which thin film material landed.
- FIG. 1 shows a schematic diagram of a thin film forming apparatus according to the first embodiment.
- a stage 22 is supported on the surface plate 20 by a moving mechanism 21.
- a substrate 50 such as a printed wiring board is held on the upper surface (holding surface) of the stage 22.
- An XYZ orthogonal coordinate system is defined in which the directions parallel to the holding surface of the stage 22 are the X direction and the Y direction, and the normal direction of the holding surface is the Z direction.
- the moving mechanism 21 moves the stage 22 in the X direction and the Y direction.
- a beam 32 is supported by a column 31 above the surface plate 20.
- a nozzle unit support mechanism 29 and an imaging device 30 are attached to the beam 32.
- the nozzle unit 23 is supported by the nozzle unit support mechanism 29.
- the imaging device 30 and the nozzle unit 23 face the substrate 50 held on the stage 22.
- the imaging device 30 images a wiring pattern, an alignment mark, a thin film pattern formed on the substrate 50, and the like formed on the surface of the substrate 50.
- Image data obtained by imaging is input to the control device 40.
- the nozzle unit 23 ejects droplets of a photocurable (for example, ultraviolet curable) thin film material, for example, a droplet of a solder resist or the like, toward the substrate 50 from a plurality of nozzle holes.
- the discharged thin film material adheres to the surface of the substrate 50.
- the nozzle unit 23 may be moved relative to the stage 22 and the surface plate 20.
- Control device 40 controls moving mechanism 21, nozzle unit 23, and imaging device 30.
- the controller 40 stores raster format image data that defines a thin film pattern to be formed on the substrate 50.
- An operator inputs various commands (commands) and numerical data necessary for control to the control device 40 through the input device 41.
- As the input device 41 for example, a keyboard, a touch panel, a pointing device, or the like is used.
- the control device 40 outputs various information from the output device 42 to the operator.
- a liquid crystal display or the like is used for the output device 42.
- FIG. 2A shows a perspective view of the nozzle unit 23.
- a plurality of, for example, four nozzle heads 24 are attached to the nozzle holder 26.
- a plurality of nozzle holes 24 a are formed in each nozzle head 24.
- the nozzle holes 24a are arranged in the X direction, and the four nozzle heads 24 are fixed to the nozzle holder 26 side by side in the Y direction.
- Ultraviolet light sources 25 are arranged between the nozzle heads 24 and outside the nozzle heads 24 at both ends.
- the ultraviolet light source 25 irradiates the substrate 50 (FIG. 1) with ultraviolet rays.
- cures with the component of light outside the wavelength range of an ultraviolet-ray as a thin film material, it replaces with the ultraviolet light source 25, and the light source which radiates
- FIG. 2B shows a bottom view of the nozzle head 24 and the ultraviolet light source 25.
- Two rows of nozzle rows 24 b are arranged on the bottom surface (surface facing the substrate 50) of each nozzle head 24.
- Each of the nozzle rows 24b includes a plurality of nozzle holes 24a arranged at a pitch (period) 8P in the X direction.
- One nozzle row 24b is displaced in the Y direction with respect to the other nozzle row 24b, and is further displaced by a pitch 4P in the X direction. That is, paying attention to one nozzle head 24, the nozzle holes 24a are distributed at equal intervals with a pitch of 4P in the X direction.
- the pitch 4P corresponds to a resolution of 300 dpi, for example.
- the four nozzle heads 24 are arranged in the Y direction and are displaced from each other in the X direction and attached to the nozzle holder 26 (FIG. 2A).
- the second, third, and fourth nozzle heads 24 are respectively shifted by 2P, P, and 3P in the negative direction of the X axis.
- the nozzle holes 24a are arranged at equal intervals in the X direction at a pitch P (pitch corresponding to 1200 dpi).
- the ultraviolet light source 25 is disposed between the nozzle heads 24 and further outside the outermost nozzle head 24 in the Y direction.
- the ultraviolet light source 25 cures the liquid thin film material attached to the substrate 50 (FIG. 1).
- a thin film pattern can be formed with a resolution of 1200 dpi in the X direction by discharging droplets of a thin film material from each nozzle hole 24a of the nozzle unit 23 while moving the substrate 50 (FIG. 1) in the Y direction.
- the resolution in the X direction can be doubled to 2400 dpi.
- the two scans can be realized by a reciprocating scan in which the directions of the first scan and the second scan are reversed.
- the resolution in the Y direction is determined by the moving speed of the substrate 30 and the discharge period of droplets from the nozzle holes 24a.
- FIG. 3 shows a plan view of the substrate 50 on which the thin film pattern is formed and the nozzle unit 23.
- a thin film pattern 55 is formed on the surface of the substrate 50.
- the board 50 is a multi-sided board in which a plurality of printed wiring boards are arranged in the plane. As an example, printed wiring boards are arranged in a matrix of 4 rows and 2 columns in the plane of the substrate 50.
- a thin film pattern 55 is defined corresponding to the printed wiring board.
- the thin film pattern 55 is formed of, for example, a solder resist.
- the operation of ejecting a thin film material droplet from the nozzle unit 23 while moving the substrate 50 in the Y direction is referred to as “scanning”.
- An area where a thin film material droplet can be landed by one scan is referred to as a unit scan area 56.
- the dimension (width) in the X direction of the unit scanning region 56 is represented by W.
- the width W of the unit scanning region 56 is 1 ⁇ 4 of the dimension in the X direction of the substrate 50.
- a thin film forming method according to Example 1 will be described with reference to FIGS. 4A to 4L and FIGS. 5A to 5C. 4A to 4L, only the region corresponding to one printed wiring board is shown as a representative of the substrate 50 shown in FIG. Further, for convenience of explanation, two squares and four circular openings are arranged in the thin film pattern, but actually, a lot of finer openings are arranged.
- FIG. 4A shows a plan view of the substrate 50 and the nozzle unit 23 before and after the first scan.
- FIG. 4B is a cross-sectional view taken along one-dot chain line 4B-4B in FIG. 4A.
- FIG. 5A is a cross-sectional view taken along one-dot chain line 5A-5A in FIG. 4A.
- the substrate 50 is scanned in the negative direction of the Y axis.
- droplets of the thin film material are landed from the nozzle head 24 (FIG. 5A) on the outermost peripheral edge of the thin film pattern 55 and the edge of the opening.
- the substrate 50 is irradiated with ultraviolet rays from the ultraviolet light source 25 (FIG. 5A).
- the surface layer portion of the thin film material is cured immediately after the droplet of the thin film material has landed on the substrate 50. Since the ultraviolet light emitted from the ultraviolet light source 25 does not have sufficient light energy density on the substrate surface, the inside of the thin film material is in an uncured state.
- a reaction in which only the surface layer portion of the thin film material is cured is referred to as “temporary curing”, and a reaction that cures to the inside is referred to as “main curing”.
- temporary curing a reaction in which only the surface layer portion of the thin film material is cured
- main curing a reaction that cures to the inside
- FIG. 4C shows a plan view of the substrate 50 and the nozzle unit 23 before and after the second scanning.
- FIG. 4D is a cross-sectional view taken along one-dot chain line 4D-4D in FIG. 4C.
- the substrate 50 is moved in the negative direction of the X axis by a distance equal to the width W of the unit scanning region 56. Thereafter, the substrate 50 is moved in the positive direction of the Y axis to perform the second scan. Also in the second scan, the droplet of the thin film material is landed from the nozzle unit 23 to the outermost peripheral edge of the thin film pattern 55 and the edge of the opening, and the thin film material is temporarily cured immediately after the landing.
- a pre-cured edge pattern 61 is formed at the outermost peripheral edge of the thin film pattern 55 and the edge of the opening in the unit scanning region 56 adjacent to the unit scanning region 56 where the edge pattern 60 is formed by the first scanning. Is done.
- FIG. 4E shows a plan view of the substrate 50 and the nozzle unit 23 before and after the third scan.
- 4F shows a cross-sectional view taken along one-dot chain line 4F-4F in FIG. 4E
- FIG. 5B shows a cross-sectional view taken along one-dot chain line 5B-5B in FIG. 4E.
- the substrate 50 is moved in the negative direction of the Y axis to perform the third scan.
- a droplet of the thin film material is landed from the nozzle head 24 (FIG. 5B) to the inside (solid region) of the region where the thin film pattern 55 (FIG. 3) is formed.
- a planar pattern 62 having the edge pattern 61 formed by the second scanning as an edge is formed.
- the ultraviolet light source 25 (FIG. 5B) is in the extinguished state. For this reason, the planar pattern 62 remains uncured.
- the edge pattern 61 formed in a region corresponding to the edge of the thin film pattern 55 blocks the spread of the thin film material in the in-plane direction. For this reason, the uncured thin film material does not enter the inside of the opening.
- an edge pattern for blocking the uncured thin film material is not formed. For this reason, on the boundary line 63 of the unit scanning region 56, the thin film material spreads until reaching an equilibrium state based on wettability with the substrate.
- FIG. 4G shows a plan view of the substrate 50 and the nozzle unit 23 before and after the fourth scan.
- FIG. 4H shows a cross-sectional view taken along one-dot chain line 4H-4H in FIG. 4G.
- the substrate 50 is moved in the positive direction of the X axis by a distance equal to the width W of the unit scan region 56 (FIG. 3).
- the substrate 50 is moved in the positive direction of the Y axis to perform the fourth scan.
- droplets of the thin film material are landed inside the region where the thin film pattern 55 (FIG. 3) is formed.
- a planar pattern 64 having the edge pattern 60 formed by the first scan as an edge is formed.
- the ultraviolet light source 25 (FIG. 5B) is in the off state. For this reason, the planar pattern 64 remains uncured.
- the boundary line 63 of the unit scanning region 56 is hardly visible.
- FIG. 4I shows a plan view of the substrate 50 and the nozzle unit 23 before and after the fifth scan.
- FIG. 4J is a cross-sectional view taken along one-dot chain line 4J-4J in FIG. 4I.
- FIG. 5C shows a cross-sectional view taken along one-dot chain line 5C-5C in FIG. 4I.
- the fifth scan is performed by moving the substrate 50 in the negative direction of the Y-axis.
- the ultraviolet light source 25 irradiates ultraviolet rays without discharging the thin film material droplets from the nozzle head 24 (FIG. 5C).
- the uncured planar pattern 64 is temporarily cured by ultraviolet irradiation.
- the pre-cured region is densely hatched, and the uncured region is sparsely hatched. The same applies to other drawings shown later.
- FIG. 4K shows a plan view of the substrate 50 and the nozzle unit 23 before and after the sixth scan.
- FIG. 4L is a cross-sectional view taken along one-dot chain line 4L-4L in FIG. 4K.
- the substrate 50 is moved in the negative direction of the X axis by a distance equal to the width W of the unit scan region 56 (FIG. 3).
- the substrate 50 is moved in the positive direction of the Y axis to perform the sixth scan.
- the thin film material droplets are not ejected from the nozzle head 24 (FIG. 5C), and only the ultraviolet light irradiation by the ultraviolet light source 25 is performed.
- the uncured planar pattern 62 is temporarily cured by ultraviolet irradiation.
- 6A and 6B are sectional views of thin film patterns formed by the method according to the comparative example and Example 1, respectively.
- the thin film pattern was formed without distinguishing the edge and the inside of the thin film pattern 55 (FIG. 3).
- the ultraviolet light source 25 (FIGS. 2A and 2B) was turned on, and the thin film material was temporarily cured immediately after the thin film material landed.
- the ultraviolet light source 25 is disposed between the nozzle heads 24. Therefore, after a thin film material droplet discharged from one nozzle head 24 has landed on the substrate 50, before a thin film material droplet discharged from the next nozzle head 24 landed on the substrate 50, first, The landing thin film material is temporarily cured.
- the thin film material droplets 55a discharged from the nozzle holes 24a overlap each other in a distinguishable state. Concavities and convexities are formed on the surface of the thin film pattern 55 corresponding to each of the droplets 55a. This unevenness is visually recognized as a striped pattern extending in the Y direction.
- edge patterns 60 and 61 are formed on the edge of the thin film pattern 55, and planar patterns 62 and 64 are formed inside the thin film pattern 55.
- the thin film materials constituting the edge patterns 60 and 61 overlap in a state where the droplets 55a are distinguishable. That is, other droplets land on the thin film material that has landed on the substrate 50 and is temporarily cured, and are temporarily cured. For this reason, edge patterns 60 and 61 higher than the height of the thin film material formed by temporarily curing one droplet are obtained.
- the planar patterns 62 and 64 are temporarily cured (FIGS.
- the thin film material that has landed on the substrate in the step of FIG. 4E spreads in the in-plane direction of the substrate, and the thin film materials that have landed on a plurality of landing points are continuous. After adjacent landing points cannot be distinguished, it is preferable to harden the thin film material of the planar pattern 62 in the process of FIG. 4K.
- the edge pattern 60 is formed in a region corresponding to the edge of the thin film pattern 55 in one unit scanning region 56 (FIG. 3) by one-way scanning. , 61 was formed.
- the resolution in the X direction can be doubled by shifting in the X direction by a distance corresponding to 1 ⁇ 2 of the pitch P (FIG. 2B) and reciprocating scanning.
- the step of forming the planar pattern 62 shown in FIG. 4E and the step of forming the planar pattern 64 shown in FIG. 4G all pixels in the solid area of the raster format image data defining the thin film pattern 55 are formed. It is not necessary to land the droplets of the thin film material. As an example, the array pitch of pixels is about 10 ⁇ m, and the diameter of a circular pattern formed by droplets that land on one pixel is about 50 ⁇ m. For this reason, the landing points may be extracted by thinning out pixels in the solid area. That is, the distribution density of the landing points when the planar patterns 62 and 64 are formed may be lower than the distribution density of the landing points when the edge patterns 60 and 61 are formed.
- the distribution density of the landing points when the planar patterns 62 and 64 are formed may be lowered, and the volume of droplets per discharge from the nozzle holes 24a (FIG. 2A) may be increased.
- the planar patterns 62 and 64 can have a desired thickness even if the distribution density of the landing points is lowered.
- Example 2 Next, a thin film forming method according to Example 2 will be described with reference to FIGS. 7A to 7E. Hereinafter, differences from the first embodiment will be described, and description of the same configuration will be omitted.
- the edge pattern 60 shown in FIG. 4A of the first embodiment is formed by the first scanning.
- FIG. 7A shows a plan view of the substrate 50 and the nozzle unit 23 before and after the second scan.
- the second scan is performed by moving the substrate 50 in the positive direction of the Y-axis.
- an uncured planar pattern 64 is formed in the same unit scanning region 56 as the unit scanning region 56 (FIG. 3) where the edge pattern 60 is formed.
- FIG. 7B shows a plan view of the substrate 50 and the nozzle unit 23 before and after the third scan.
- the third scan is performed by moving the substrate 50 in the negative direction of the Y axis without shifting in the X direction.
- the ultraviolet light from the ultraviolet light source 25 (FIGS. 2A and 2B) is irradiated without discharging a thin film material droplet from the nozzle unit 23.
- the planar pattern 64 is temporarily cured.
- FIG. 7C shows a plan view of the substrate 50 and the nozzle unit 23 before and after the fourth scan.
- the substrate 50 is shifted in the negative direction of the X axis by a distance equal to the width W of the unit scan region 56 (FIG. 3).
- the substrate 50 is moved in the positive direction of the Y axis to perform the fourth scan.
- the edge of the thin film pattern 55 is formed in the unit scan region 56 adjacent to the unit scan region 56 (FIG. 3) where the edge pattern 60 and the planar pattern 64 are formed in the first to third scans.
- a corresponding edge pattern 61 is formed.
- the edge pattern 61 is temporarily cured during the fourth scan.
- an uncured planar pattern 62 is formed by performing the fifth scan.
- the planar pattern 62 is temporarily cured by performing the sixth scan. 7D and 7E are the same as the process of forming the planar pattern 64 shown in FIGS. 7A and 7B.
- Example 1 after forming edge patterns 60 and 61 on the portions corresponding to the edges of the thin film pattern 55 (FIG. 3) (FIGS. 4A to 4D), planar patterns 62 and 64 were formed (FIGS. 4E to 4E). FIG. 4L).
- the edge pattern and the planar pattern in one unit scanning region 56 (FIG. 3) are formed, the edge pattern and the planar pattern in the adjacent unit scanning region 56 are formed. Also in the second embodiment, the surfaces of the planar patterns 62 and 64 are flat as in the first embodiment.
- Example 2 after the planar pattern 64 (FIG. 7B) is temporarily cured, the planar pattern 62 (FIG. 7D) in the adjacent unit scanning region 56 is formed. For this reason, the boundary line 63 (FIG. 7E) of the unit scanning region 56 becomes easier to visually recognize than the first embodiment. However, many striped patterns corresponding to the number of nozzle holes 24a are not visually recognized.
- Example 3 A thin film forming method according to Example 3 will be described with reference to FIGS. 8A to 8D. Hereinafter, differences from the second embodiment will be described, and description of the same configuration will be omitted.
- the nozzle unit 23 (FIG. 2A) of the thin film forming apparatus used in Example 2 included four nozzle heads 24.
- the nozzle unit 23 of the thin film forming apparatus used in the third embodiment includes eight nozzle heads 24.
- FIG. 8A shows a plan view of the substrate 50 before and after the first scan, and the nozzle unit 23.
- the nozzle unit 23 includes two subunits 23A and 23B.
- the configuration of each of the subunits 23A and 23B is the same as that of the nozzle unit 23 (FIG. 2A) of the first embodiment.
- the subunits 23a and 23B are arranged in the Y direction at a certain interval.
- the subunit 23A is arranged on the positive side of the Y axis with respect to the subunit 23B.
- the first scan is performed by moving the substrate 50 in the negative direction of the Y axis.
- the edge pattern 60 is formed using the subunit 23A.
- the ultraviolet light source 25 of the subunit 23A is turned on. For this reason, the formed edge pattern 60 will be in the state of temporary hardening.
- the planar pattern 64 is further formed by using the subunit 23B.
- the ultraviolet light source 25 of the subunit 23B is turned off. For this reason, the formed planar pattern 64 is in an uncured state.
- a thin film material for forming the planar pattern 64 is discharged from the subunit 23B. Since the edge pattern 60 blocks the thin film material discharged from the subunit 23B, the thin film material does not enter the opening.
- FIG. 8B shows a plan view of the substrate 50 and the nozzle unit 23 before and after the second scan.
- the second scan is performed by moving the substrate 50 in the positive direction of the Y axis without shifting in the X direction.
- at least one ultraviolet light source 25 of the subunits 23A and 23B is turned on. Thereby, the planar pattern 64 is temporarily cured.
- the substrate 50 is moved in the negative direction of the X axis by a distance equal to the width W of the unit scan region 56 (FIG. 3).
- a temporarily cured edge pattern 61 and an uncured planar pattern 62 are formed.
- the third scan is the same as the first scan shown in FIG. 8A.
- the fourth scan is performed in the same manner as the second scan shown in FIG. 8B.
- the planar pattern 62 is temporarily cured by the fourth scan.
- Example 2 a thin film pattern was formed in one unit scanning region 56 (FIG. 3) by three scans.
- Example 3 a thin film pattern can be formed in one unit scanning region 56 (FIG. 3) by performing scanning twice.
- Example 4 With reference to FIG. 9 and FIGS. 10A to 10C, a thin film forming method according to Example 4 will be described. Hereinafter, differences from the third embodiment will be described, and description of the same configuration will be omitted.
- FIG. 9 is a plan view of the nozzle unit 23 of the thin film forming apparatus according to the fourth embodiment.
- the nozzle unit 23 includes two subunits 23A and 23B.
- Each of the subunits 23A and 23B is attached to the same nozzle holder 23 and has the same configuration as the nozzle unit 23 (FIGS. 2A and 2B) of the first embodiment. That is, each of the subunits 23 ⁇ / b> A and 23 ⁇ / b> B includes four nozzle heads 24 and five ultraviolet light sources 25.
- the two subunits 23A and 23B are arranged at the same position in the X direction.
- the subunit 23A is disposed closer to the positive side of the Y axis than the subunit 23B.
- the nozzle unit 23 of Example 4 has two solid region ultraviolet light sources 70.
- Each of the solid region ultraviolet light sources 70 has a shape that is long in the X direction, and is 1 / of the width W of the unit scanning region 56 (FIG. 3) in the negative direction of the X axis with respect to the subunits 23A and 23B. It is fixed at a position shifted by a distance equal to 2.
- two solid region ultraviolet light sources 70 are arranged so as to sandwich two subunits 23A and 23B.
- FIG. 10A shows a plan view of the substrate 50 and the nozzle unit 23 before and after the first scan.
- the subunits 23A and 23B are arranged at positions corresponding to the unit scanning region 56 that is the most negative in the X direction.
- the first scan is performed by moving the substrate 50 in the negative direction of the Y axis.
- the nozzle head 24 and the ultraviolet light source 25 of the subunit 23A are operated to form the edge pattern 60.
- the nozzle head 24 of the subunit 23B is operated to form the planar pattern 64.
- the solid region ultraviolet light source 70 arranged on the negative side of the Y-axis
- the half region on the negative side in the X direction of the planar pattern 64 is temporarily cured.
- the thin film material droplets discharged from the nozzle head 24 of the subunit 23B are temporarily cured by the solid region ultraviolet light source 70 until the thin film material droplets adhering to the substrate spread in the in-plane direction. This is longer than the time required for the planar pattern 64 to have a uniform film thickness.
- the surface of the temporarily cured portion of the planar pattern 64 becomes substantially flat.
- the time from the adhesion of the thin film material to the temporary curing can be controlled by adjusting the interval between the subunit 23B and the solid region ultraviolet light source 70 on the Y direction negative side.
- FIG. 10B shows a plan view of the substrate 50 and the nozzle unit 23 before and after the second scan.
- the substrate 50 is moved in the negative direction of the X axis by a distance equal to the width W of the unit scan region 56.
- the second scan is performed by moving the substrate 50 in the positive direction of the Y axis.
- the edge pattern 61 is formed by operating the nozzle head 24 and the ultraviolet light source 25 of the subunit 23B.
- the surface pattern 62 is formed by operating the nozzle head 24 of the subunit 23A.
- the uncured portion of the planar pattern 64 and a portion on the negative side in the X direction of the planar pattern 62 are temporarily cured. .
- FIG. 10C shows a plan view of the substrate 50 and the nozzle unit 23 before and after the third scan.
- the substrate 50 is moved in the negative direction of the X axis by a distance equal to the width W of the unit scan region 56.
- a third scan is performed by moving the substrate 50 in the negative direction of the Y axis.
- the third scan is performed in the same procedure as the first scan.
- the edge pattern 65 and the planar pattern 66 are formed in the unit scanning region 56 adjacent to the X direction positive side with respect to the unit scanning region 56 in which the thin film pattern is formed by the second scanning.
- the uncured portion of the planar pattern 62 is temporarily cured by the ultraviolet rays from the solid region ultraviolet light source 70, and the X-direction negative side portion of the planar pattern 66 is temporarily cured.
- a thin film pattern can be formed over the entire area of the substrate 50.
- Example 4 the formation of the edge pattern, the formation of the planar pattern, and the temporary curing of a part of the planar pattern are performed by one scan. Therefore, it is possible to form a thin film pattern with a smaller number of scans than in the third embodiment.
- Example 4 when attention is paid only to the area inside the thin film pattern 55 (FIG. 3) (solid area), the following steps are executed in order.
- a droplet of a thin film material is landed in the first unit scanning region 56 having the first width W in the X direction (FIG. 10A).
- a planar pattern 64 is formed in the first unit scanning region 56.
- the thin film material adhering to a part on the negative side in the X direction in the first unit scanning region 56 is temporarily cured.
- a droplet of the thin film material is landed in the second unit scanning region 56 adjacent to the first unit scanning region on the positive side in the X direction (FIG. 10B).
- a planar pattern 62 is formed in the second unit scanning region 56.
- the thin film material adhering to the uncured portion on the X direction positive side in the first unit scanning region 56 and the portion on the negative side in the X direction in the second unit scanning region 56 is temporarily cured. .
- the boundary line between the two can be made inconspicuous.
- the region on the positive side in the X direction of the planar pattern 64 is not temporarily cured at the stage where the thin film material for forming the planar pattern 62 is attached to the substrate 50.
- the thin film materials are mixed with each other in the vicinity of the boundary line between the planar pattern 64 and the planar pattern 62.
- the boundary line between the planar pattern 62 and the planar pattern 64 can be made inconspicuous.
- Example 5 A thin film forming method according to Example 5 will be described with reference to FIGS. 11 to 17B. Hereinafter, differences from the first embodiment will be described, and description of the same configuration will be omitted. Before describing Example 5, an evaluation experiment will be described.
- FIG. 11 shows a bottom view of the nozzle unit used in the evaluation experiment.
- the nozzle unit 23R includes a nozzle head 24, a light source 25, and a nozzle holder (support mechanism) 26 that supports them.
- the nozzle head 24 is provided with a plurality of nozzle holes 24a that are regularly arranged and discharge solder resist.
- Each of the nozzle holes 24a includes, for example, a piezo element, and discharges a solder resist in response to application of a voltage pulse.
- the discharge of the solder resist from the nozzle hole 24a is controlled by the control device 40.
- the light sources 25 are arranged on both sides along the arrangement direction of the nozzle holes 24a. An interval between the light source 25 and the nozzle hole 24a is represented by L.
- the light source 25 photocures the solder resist discharged from the nozzle holes 24a and attached to the substrate.
- the light source 25 is provided with an optical system in which the emitted light becomes parallel light.
- the light source 25 arranged on the positive side of the Y axis with respect to the nozzle head 24 photocures the solder resist attached to the substrate 50 (FIG. 1) when the substrate is scanned in the positive direction of the Y axis.
- the light source 25 disposed on the negative side of the Y axis with respect to the nozzle head 24 photocures the solder resist attached to the substrate when the substrate 50 is scanned in the negative direction of the Y axis. Therefore, the light source 25 may be arranged only on one side of the array of nozzle holes 24a depending on the substrate scanning method.
- FIG. 12 shows a side view when the substrate 50 is scanned.
- the control device 40 moves the substrate 50 with respect to the nozzle unit 23R at a constant feed rate, for example, in the negative direction of the Y axis. Furthermore, the control device 40 applies a voltage pulse to the nozzle holes 24a at a predetermined cycle based on image data stored in advance, and discharges the solder resist from the nozzle holes 24a.
- the nozzle hole 24a discharges the solder resist toward the surface of the substrate 50 vertically below the nozzle hole 24a by applying a voltage pulse starting at time T1.
- the droplets of the solder resist discharged from the nozzle holes 24a gradually spread in the in-plane direction of the substrate 50 after landing on the substrate 50.
- the solder resist that adheres to the substrate 50 and spreads in the in-plane direction moves in the negative direction of the Y axis as the substrate 50 moves.
- the solder resist is cured by light irradiation from the light source 25 at a time T2 when the light source 25 moves vertically below the nozzle hole 24a by a distance L. This discharging and curing process is repeated to form a thin film pattern made of a solder resist on the surface of the substrate 50.
- FIG. 13A shows a plan view of a thin film pattern to be formed on the substrate 50.
- the thin film pattern to be formed on the substrate 50 includes an insulating region 51 where a solder resist is formed, and a land region 52 where a solder resist is not formed. Further, a fine region 50 a where the land regions 52 are densely packed and a solid region 50 b whose entire surface is covered with the insulating region 51 are included. In the drawing, the insulating region 51 is hatched.
- the control device 40 (FIG. 1) discharges the solder resist from the nozzle holes 24a while moving the substrate 50 with respect to the nozzle unit 23R based on the image data of the thin film pattern.
- solder resist By curing the solder resist attached to the substrate 50 by light irradiation from the light source 25, a thin film pattern made of the solder resist is formed.
- the droplets of the solder resist discharged from the nozzle holes 24a gradually spread in the in-plane direction of the substrate 50 after landing on the substrate 50.
- the solder resist is cured by light irradiation from the light source 25, its shape is maintained.
- 13B and 13C are cross-sectional views taken along the arrow line 13-13 in FIG. 13A.
- the distance L (FIG. 11) between the nozzle hole 24a of the nozzle unit 23R and the light source 25 is small, the solder resist landed on the substrate 50 is photocured at a relatively early timing. Since the solder resist that has landed on the substrate 50 is hardened before spreading greatly, it can cope with the formation of a fine thin film pattern as shown in the fine region 50a of FIG. 13B.
- the shape of the droplet remains slightly, and as shown in the solid region 50b in FIG. 13B, the film thickness of the formed thin film pattern becomes non-uniform (unevenness appears on the surface).
- the solder resist that has landed on the substrate 50 is cured at a relatively late timing. Since the solder resist that has landed on the substrate 50 is hardened after spreading widely, the land region 52 is covered with the solder resist as shown in the fine region 50a of FIG. 13C, which corresponds to the formation of a fine thin film pattern. I can't. On the other hand, as shown in the solid region 50b in FIG. 13C, the film thickness of the formed thin film pattern becomes uniform (the surface becomes flat).
- FIG. 14 is a bottom view of the nozzle unit according to the fifth embodiment.
- the nozzle unit 23 according to the fifth embodiment includes a nozzle head 24, light sources 25a and 25b, and a nozzle holder (support mechanism) 26 that supports them.
- the nozzle head 24 is provided with a plurality of regularly arranged nozzle holes 24a.
- the opening diameter of the nozzle holes 24a is about 30 ⁇ m
- the pitch of each nozzle hole 24a is about 80 ⁇ m.
- the light sources 25a and 25b are arranged on both sides along the arrangement of the nozzle holes 24a.
- the distance between the light source 25a and the nozzle hole 24a is represented by L1.
- the distance L2 between the light source 25b and the nozzle hole 24a is larger than the distance L1.
- the distance L1 between the nozzle hole 24a and the light source 25a is about 0.3 mm
- the distance L2 between the nozzle hole 24a and the light source 25b is about 1.0 mm.
- the light sources 25a and 25b are provided with an optical system in which emitted light becomes parallel light.
- the discharge of the solder resist from the nozzle hole 24a and the on / off of the light sources 25a and 25b are controlled by the control device 40.
- the light sources 25a and 25b arranged on the positive side of the Y axis with respect to the nozzle head 24 are solder resists attached to the substrate 50 when the substrate 50 (FIG. 1) moves in the positive direction of the Y axis. Is cured.
- the control device 40 moves the substrate 50 with respect to the nozzle unit 23 at a constant feed speed, for example, in the negative direction of the Y axis. Based on the image data of the thin film pattern, the control device 40 applies a voltage pulse to the nozzle holes 24a at a predetermined cycle, and discharges the solder resist from the nozzle holes 24a.
- the feeding speed of the substrate 50 is about 300 mm / s
- the frequency at which the nozzle head 24 ejects the solder resist is about 30 kHz.
- the height from the substrate 50 to the nozzle head 24 is about 0.5 mm to 1 mm, and the height to the light sources 25a and 25b is about 20 mm to 30 mm.
- the control device 40 As shown in FIG. 15A, emits the light from the light source 25a disposed at a position relatively close to the nozzle hole 24a.
- the solder resist is cured by irradiation. For example, the solder resist that has landed on the fine region 50 a is cured about 0.1 s after landing on the substrate 50.
- the area where the solder resist has landed is a solid area 50a (FIG. 13A), as shown in FIG.
- the solder resist is irradiated with light from a light source 25b disposed at a position relatively far from the nozzle hole 24a. Is cured. For example, the solder resist that has landed on the solid region 50 b is cured about 0.3 s after landing on the substrate 50.
- FIG. 16A shows a plan view of the thin film pattern formed on the substrate 50
- FIG. 16B shows a cross-sectional view taken along the arrow line 16B-16B in FIG. 16A.
- the thin film pattern to be drawn on the substrate 50 includes a fine region 50 a where the land regions 52 are densely packed and a solid region 50 b where the entire surface is covered with the insulating region 51.
- the insulating region 51 is hatched.
- the control device 40 (FIG. 1) stores in advance the partition information of the fine region 50a and the solid region 50b of the thin film pattern to be formed.
- the fine region 50a corresponds to a region where an integrated circuit element (IC, LSI) having a package such as BGA (Ball Grid Array) is mounted.
- the solid region 50b corresponds to a region where discrete components are mounted or a region where the entire surface is covered with a thin film pattern of solder resist.
- the control device 40 (FIG. 1) discharges the solder resist from the nozzle holes 24a while moving the substrate 50 with respect to the nozzle unit 23 based on the image data of the thin film pattern.
- the solder resist attached to the fine region 50a is cured by light irradiation from the light source 25a, and the solder resist attached to the solid region 50b is obtained from the light source 25b. Cured by light irradiation.
- the control device 40 may automatically set the fine region 50a and the solid region 50b from the image data of the thin film pattern based on the sizes of the insulating region 51 and the land region 52 and their density. .
- FIGS. 17A and 17B are plan views of a nozzle unit and a substrate according to a modification of the fifth embodiment.
- the number of light sources provided in the nozzle unit 23 is not limited to two, and may be three or more, or may be provided with a mechanism that can change the position of arrangement.
- the plurality of LEDs can be independently turned on / off by the control device. With such a configuration, the fine region 50a and the solid region 50b can be more finely arranged in the X-axis direction with the region irradiated with one LED as a unit region.
- the light source may be separated from the nozzle unit 23 and attached to the frame of the thin film forming apparatus, for example.
- the light source attached to the frame may be provided with a mechanism capable of changing the position where it is arranged.
- the nozzle head 24 provided in the nozzle unit 23 may have a configuration in which the nozzle holes 24a are arranged in a staggered manner (zigzag) as shown in FIG. 17B.
- the plurality of nozzle holes 24a constitute, for example, two nozzle rows 24I and 24J separated in the Y-axis direction.
- the nozzle holes 24a constituting each nozzle row 24I, 24J are arranged at a pitch 8P in the X-axis direction.
- the nozzle holes 24a constituting one nozzle row 24I are arranged so as to be shifted by 4P in the X-axis direction with respect to the nozzle holes 24a constituting the other nozzle row 24J.
- the nozzle head 24 By configuring the nozzle head 24 in such a configuration, the resolution in the X-axis direction can be easily increased without being restricted by the supply mechanism for supplying the solder resist to the nozzle holes 24a and the dimensions and arrangement of the piezoelectric elements. Is possible.
- Example 6 With reference to FIGS. 18A to 20B, a thin film forming method according to Example 6 will be described. Hereinafter, differences from the fifth embodiment will be described, and description of the same configuration will be omitted.
- the nozzle unit 23 of the thin film forming apparatus according to the sixth embodiment includes a nozzle head 24, a light source 25, and a rotation mechanism 27 that can rotate the light source 25 around a rotation axis parallel to the X-axis direction.
- the rotation mechanism 27 can move the irradiation position of the light emitted from the light source 25 on the surface of the substrate 50 in the Y-axis direction by rotating the light source 25.
- the rotation of the light source 25 by the rotation mechanism 27 is controlled by the control device 40.
- the control device 40 moves the substrate 50 with respect to the nozzle unit 23 at a constant feed rate, for example, in the negative direction of the Y axis. Based on the stored image data, the control device 40 applies a voltage pulse to the nozzle holes 24a at a predetermined cycle, and discharges the solder resist from the nozzle holes 24a.
- the feeding speed of the substrate 50 is about 300 mm / s, and the frequency at which the nozzle head 24 ejects the solder resist is about 30 kHz.
- the height from the substrate 50 to the nozzle head 24 is about 0.5 mm to 1 mm, and the height to the light source 25 is about 20 mm to 30 mm.
- the control device 40 When the area where the solder resist has landed is the fine area 50a (FIG. 16A), the control device 40, for example, at a position closer to the nozzle hole 24a than the vertical lower position of the light source 25, as shown in FIG.
- the rotation mechanism 27 is controlled so that the solder resist adhering to 50 is photocured. For example, the solder resist that has landed on the fine region 50 a is cured about 0.1 s after landing on the substrate 50.
- the area where the solder resist has landed is a solid area 50b (FIG. 16A), as shown in FIG. 18B, for example, at a position farther from the nozzle hole 24a than the vertical lower position of the light source 25,
- the rotating mechanism 27 is controlled so that the attached solder resist is cured. For example, the solder resist that has landed on the solid region 50 b is cured about 0.3 s after landing on the substrate 50.
- the mechanism for moving the irradiation position of the light beam emitted from the light source 25 onto the substrate is not limited to the rotation mechanism. As shown in FIG. 18C, the irradiation position of the light beam emitted from the light source 25 onto the substrate may be moved by the optical system 28.
- FIG. 19A shows a plan view of the substrate 50 on which a thin film pattern is formed, and the nozzle unit 23.
- FIG. 19B shows a cross-sectional view taken along the arrow line 19B-19B in FIG. 19A.
- the thin film pattern to be formed on the substrate 50 includes a fine region 50 a where the land regions 52 are densely packed and a solid region 50 b whose entire surface is covered with the insulating region 51.
- the insulating region 51 is hatched.
- the control device 40 discharges the solder resist from the nozzle holes 24a while moving the substrate 50 relative to the nozzle unit 23 based on the image data of the thin film pattern.
- the control device 40 controls the rotation mechanism 27 based on the partition information of the fine area 50a and the solid area 50b.
- the solder resist landed on the fine region 50a is cured at a position relatively close to the nozzle hole 24a (FIG. 18A).
- the solder resist landed on the solid region 50b is cured at a position relatively far from the nozzle hole 24a (FIG. 18B).
- the positional accuracy of the edge of the thin film pattern is improved in the fine region 50a of the substrate 50, and the film thickness of the thin film pattern of the solder resist to be formed is uniform in the solid region 50b. It becomes possible to.
- FIG. 20 shows a nozzle unit according to a modification of the sixth embodiment.
- the light source 25a to 25c provided in the nozzle unit and the irradiation position moving mechanism that can move the irradiation position of the light beam emitted from the light source 25a to 25c to the substrate are not limited to one. You may provide the mechanism which can change the position arrange
- the light sources 25a to 25c are composed of a plurality of light emitting diodes (LEDs) arranged along the arrangement of the nozzle holes 24a.
- a plurality of irradiation position moving mechanisms that can move the irradiation position of the light beam emitted from each of the LEDs to the substrate may be included.
- the plurality of irradiation position moving mechanisms can be controlled independently by the control device 40 (FIGS. 18A to 18C). With such a configuration, the fine region 50a and the solid region 50b can be arranged more finely in the X-axis direction with the region irradiated with one LED as a unit region.
- the light sources 25a to 25c and the irradiation position moving mechanism may be separated from the nozzle unit 23 and attached to the frame of the thin film forming apparatus, for example. Further, the light sources 25a to 25c and the irradiation position moving mechanism may include a mechanism capable of changing a position where they are arranged.
- Example 7 Next, a thin film forming method according to Example 7 will be described with reference to FIGS. 21A to 21D. Hereinafter, differences from the first embodiment will be described, and description of the same configuration will be omitted.
- Example 1 a thin film pattern of solder resist was formed on the surface of the printed wiring board.
- Example 7 an insulating film as an inner layer of the build-up substrate is formed.
- a first wiring pattern 81 made of copper or the like is formed on the surface of the core substrate 80.
- the first wiring pattern 81 is formed by patterning a conductive film formed by plating.
- an insulating film (thin film pattern) 82 is formed on the core substrate 80 and the first wiring pattern 81.
- the thin film forming method according to the first to sixth embodiments can be applied.
- an epoxy resin is used for the insulating film 82.
- An insulating film 82 made of an epoxy resin can be formed by discharging a droplet of the epoxy resin from the nozzle unit 23 (FIG. 1 and the like).
- the insulating film 83 is provided with a plurality of via holes 83. A part of the first wiring pattern 81 is exposed in the via hole 83.
- a second wiring pattern 84 made of copper or the like is formed on the insulating film 82.
- a semi-additive method can be applied to form the second wiring pattern 84.
- the second wiring pattern 84 is connected to the first wiring pattern 81 via the via hole 83. Since the thin film forming method according to the first to sixth embodiments is applied to the formation of the insulating film 82, the surface of the insulating film 82 can be flattened. Since the base surface on which the second wiring pattern 84 is formed is flat, it is possible to apply a semi-additive method similar to the conventional one to the formation of the second wiring pattern 84.
- an insulating film 85 is formed on the insulating film 82 and the second wiring pattern 84.
- the thin film forming method according to the first to sixth embodiments can be applied.
- a solder resist is used for the insulating film 85.
- an epoxy resin or the like is used for the insulating film 85.
- FIG. 22A is a bottom view of the nozzle unit 23 of the thin film forming apparatus according to the eighth embodiment.
- differences from the first embodiment will be described, and description of the same configuration will be omitted.
- the plurality of nozzle heads 24 are arranged in the Y-axis direction, that is, in the scanning direction of the substrate 50 (FIG. 1).
- a plurality of (for example, three) nozzle heads 24 are arranged in the X-axis direction, that is, the direction orthogonal to the scanning direction.
- the arrangement direction of the nozzle holes 24a is parallel to the X axis as in the case of the first embodiment.
- Ultraviolet light sources 25 are arranged on both sides (positive side and negative side of the Y axis) of each nozzle head 24.
- the interval between the nozzle heads 24 is equal to the width W of the unit scanning region 56 (FIG. 3).
- the substrate 50 (FIG. 1) once in the Y-axis direction
- droplets of a thin film material are landed in the three unit scanning regions 56 (FIG. 3) arranged at intervals W in the X direction.
- W the distance in the X-axis direction
- a thin film material droplet can be landed in the six unit scanning regions 56 continuous in the X-axis direction.
- the resolution of the thin film pattern in the X-axis direction can be increased.
- the nozzle heads 24 may be arranged in a matrix in the X-axis direction and the Y-axis direction.
- a plurality (for example, four) of nozzle heads 24 arranged in the Y-axis direction is the same as the arrangement of the nozzle heads 24 according to the first embodiment shown in FIGS. 2A and 2B.
- FIG. 23 is a bottom view of the nozzle unit 23 of the thin film forming apparatus according to the ninth embodiment.
- differences from the first embodiment will be described, and description of the same configuration will be omitted.
- Example 1 a plurality of nozzle heads 24 are arranged in the Y-axis direction, but in Example 9, a plurality of (for example, four) nozzle heads 24 are arranged in the X-axis direction.
- the four nozzle heads 24 have nozzle holes 24a arranged at equal intervals in the X-axis direction (pitch 4P shown in FIG. 2B). Even between the nozzle heads 24 adjacent to each other in the X-axis direction, the relative position of the nozzle head 24 in the X direction is adjusted so that the pitch of the nozzle holes becomes equal to the pitch of the nozzle holes in the nozzle head 24. Yes.
- the nozzle heads 24 adjacent in the X-axis direction are arranged so as to be shifted from each other in the Y-axis direction.
- a droplet of a thin film material can be landed on an area having a width of 4 W in one scan.
- the edge pattern 60 is composed of a plurality of pixels arranged at a pitch P, for example.
- 24A to 24D show edge patterns 60 after the completion of the first to fourth scans, respectively.
- a pixel on which the thin film material has landed is indicated by a black circle symbol
- a pixel on which the thin film material has not landed is indicated by a hollow circle symbol.
- the thin film material lands on every third pixel in the X-axis direction.
- the substrate 50 (FIG. 1) is shifted from the nozzle unit 23 by a distance equal to the pitch P in the X-axis direction, and the second scan is performed.
- the thin film material can be landed on all the pixels constituting the edge pattern 60 by performing the third and fourth scans.
- planar patterns 62 and 64 (FIGS. 4G to 4L) are formed as in the first embodiment.
- the range in the X-axis direction in which the thin film material can be landed by one scan is wide.
Abstract
Description
本発明の目的は、薄膜の表面に凹凸が発生しにくい薄膜形成方法及び薄膜形成装置を提供することである。
基板の表面の、薄膜パターンを形成する領域の縁への、薄膜材料の液滴の着弾と、着弾した薄膜材料の硬化とを繰り返すことにより、前記薄膜パターンを形成する領域の縁に、薄膜材料からなるエッジパターンを形成する工程と、
前記エッジパターンで縁が画定された内部領域に、薄膜材料の液滴を着弾させる工程と、
前記内部領域に着弾した薄膜材料を硬化させる工程と
を有する薄膜形成方法が提供される。
(a)表面が、形成すべき薄膜パターンの縁を含む第1の領域と、ベタの薄膜が形成される第2の領域とに区分された基板の、前記第1の領域内の、薄膜を形成すべき領域に、光硬化性の薄膜材料を付着させる工程と、
(b)前記工程aの後、前記基板の前記第1の領域に付着した前記薄膜材料に光を照射して、前記薄膜材料を硬化させる工程と、
(c)前記第2の領域内に、前記薄膜材料を付着させる工程と、
(d)前記工程cの後、前記第2の領域基板に付着した前記薄膜材料に光を照射して、前記薄膜材料を硬化させる工程と
を有し、前記第2の領域に付着後、前記工程dで薄膜材料に光照射されるまでの時間が、前記第1の領域に付着後、前記工程bで薄膜材料に光照射されるまでの時間よりも長い薄膜形成方法が提供される。
基板を保持するステージと、
前記ステージに保持された基板に対向し、前記基板の表面に、光硬化性の薄膜材料の液滴を吐出する複数のノズル孔、及び前記基板に付着した薄膜材料に硬化用の光を照射する光源が設けられているノズルユニットと、
前記ノズルユニットと前記ステージとの一方を他方に対して、前記基板の表面に平行な方向に移動させる移動機構と、
前記基板に形成すべき薄膜パターンの画像データを記憶している制御装置と
を有し、
前記制御装置は、
前記画像データに基づいて、前記薄膜パターンの縁に、前記薄膜材料の液滴が着弾し、前記縁に着弾した薄膜材料に前記光源から光が照射されてエッジパターンが形成された後、前記薄膜パターンを形成する領域の内部に、前記薄膜材料の液滴が着弾し、前記薄膜を形成する領域の内部に着弾した前記薄膜材料に、前記光源から光が照射されるように、前記移動機構、前記ノズルユニット、及び前記光源を制御する薄膜形成装置が提供される。
基板を保持するステージと、
前記ステージに保持された基板に向けて、光硬化性及び絶縁性を有する液状材料を吐出し、該液状材料を前記基板に付着させる複数のノズル孔が設けられているノズルユニットと、
前記ステージ及び前記ノズルユニットの一方を他方に対して、前記基板の表面に平行なY方向に移動させる移動機構と、
前記複数のノズル孔からY方向に離れて配置され、前記基板に付着した液状材料に光を照射することによって該液状材料を硬化させる第1の光源と、
前記複数のノズル孔からY方向に、前記第1の光源よりもさらに離れて配置され、前記基板に付着した液状材料に光を照射することによって該液状材料を硬化させる第2の光源と、
前記基板の表面に形成すべき薄膜パターンを定義する画像データを記憶し、該画像データに基づいて、前記移動機構、前記ノズルユニット、前記第1及び第2の光源を制御する制御装置と、
を備え、
前記制御装置は、前記第1の光源が、前記薄膜パターンの縁を含む第1の領域に付着した液状材料を硬化させ、前記第2の光源が薄膜パターンがベタに形成される第2の領域に付着した液状材料を硬化させるように、前記第1及び第2の光源を制御する薄膜形成装置が提供される。
次に、図7A~図7Eを参照して、実施例2による薄膜形成方法について説明する。以下、実施例1との相違点について説明し、同一の構成については説明を省略する。1回目の走査により、実施例1の図4Aに示したエッジパターン60が形成される。
図8A~図8Dを参照して、実施例3による薄膜形成方法について説明する。以下、実施例2との相違点について説明し、同一の構成については説明を省略する。実施例2で用いられた薄膜形成装置のノズルユニット23(図2A)は、4個のノズルヘッド24を含んでいた。実施例3で用いられる薄膜形成装置のノズルユニット23は、8個のノズルヘッド24を含む。
図9、及び図10A~図10Cを参照して、実施例4による薄膜形成方法について説明する。以下、実施例3との相違点について説明し、同一の構成については説明を省略する。
図11~図17Bを参照して、実施例5による薄膜形成方法について説明する。以下、実施例1との相違点について説明し、同一の構成については説明を省略する。実施例5について説明する前に、評価実験について説明する。
図18A~図20Bを参照して、実施例6による薄膜形成方法について説明する。以下、実施例5との相違点について説明し、同一の構成については説明を省略する。
次に、図21A~図21Dを参照して、実施例7による薄膜形成方法について説明する。以下、実施例1との相違点について説明し、同一の構成については説明を省略する。
図22Aに、実施例8による薄膜形成装置のノズルユニット23の底面図を示す。以下、実施例1との相違点について説明し、同一の構成については説明を省略する。
図23に、実施例9による薄膜形成装置のノズルユニット23の底面図を示す。以下、実施例1との相違点について説明し、同一の構成については説明を省略する。
21 移動機構
22 ステージ
23、23R ノズルユニット
24 ノズルヘッド
24a ノズル孔
24I、24J ノズル列
25、25a、25b 紫外光源
26 ノズルホルダ
27 回転機構
28 光学系
29 ノズルユニット支持機構
30 撮像装置
31 支柱
32 梁
40 制御装置
41 入力装置
42 出力装置
50 基板
50a 微細領域
50b ベタ領域
51 絶縁領域
52 ランド領域
55 薄膜パターン
55a 液滴
56 単位走査領域
60、61 エッジパターン
62 面状パターン
63 単位走査領域の境界線
64 面状パターン
65 エッジパターン
66 面状パターン
70 ベタ領域用紫外光源
80 コア基板
81 第1の配線パターン
82 絶縁膜
83 ビアホール
84 第2の配線パターン
85 絶縁膜
Claims (28)
- 基板の表面の、薄膜パターンを形成する領域の縁への、薄膜材料の液滴の着弾と、着弾した薄膜材料の硬化とを繰り返すことにより、前記薄膜パターンを形成する領域の縁に、薄膜材料からなるエッジパターンを形成する工程と、
前記エッジパターンで縁が画定された内部領域に、薄膜材料の液滴を着弾させる工程と、
前記内部領域に着弾した薄膜材料を硬化させる工程と
を有する薄膜形成方法。 - 前記エッジパターンを形成する工程において、薄膜材料を吐出する複数のノズル孔が形成されたノズルユニットと、前記基板との一方を他方に対して移動させながら、前記ノズル孔から薄膜材料を吐出させることにより、前記薄膜パターンを形成する領域の縁に薄膜材料の液滴を着弾させる請求項1に記載の薄膜形成方法。
- 前記薄膜材料は、光照射によって硬化する光硬化性の材料であり、前記エッジパターンを形成する工程において、薄膜材料を硬化させるための光を放射する光源と、前記基板との一方を他方に対して移動させることにより、前記基板に着弾した薄膜材料を硬化させる請求項2に記載の薄膜形成方法。
- 前記ノズルユニットと前記基板との一方を他方に対して一方向に移動させながら、前記ノズル孔から薄膜材料を吐出させる処理を1回の走査として、前記エッジパターンを形成する工程において、前記基板の1つの領域に対して複数回の走査を行う請求項3に記載の薄膜形成方法。
- 前記複数回の走査は、往復走査により実現する請求項4に記載の薄膜形成方法。
- 前記エッジパターンを形成する工程において、前記走査中に、前記基板に着弾した薄膜材料に前記光源から光を照射し、
前記内部領域に薄膜材料を着弾させる工程では、走査中に光を照射せず、
前記内部領域に薄膜材料を着弾させる工程の走査が終了した後、前記光源と前記基板との一方を他方に対して移動させながら、前記内部領域に着弾した薄膜材料に光を照射する請求項3乃至5のいずれか1項に記載の薄膜形成方法。 - 前記エッジパターンを形成する工程において、前記薄膜パターンを形成する領域の縁に着弾して、硬化された薄膜材料と部分的に重なるように、薄膜材料の他の液滴を着弾させて、硬化させることにより、前記エッジパターンを、薄膜材料の1つの液滴が硬化することによって形成される薄膜材料の高さよりも高くする請求項1乃至6のいずれか1項に記載の薄膜形成方法。
- 前記エッジパターンを形成する工程において、前記基板に着弾した薄膜材料の表層部を硬化させ、内部は未硬化の状態とすることにより、前記エッジパターンを形成する請求項1乃至7のいずれか1項に記載の薄膜形成方法。
- 前記内部領域に薄膜材料を着弾させるときの着弾点の分布密度を、前記エッジパターンを形成するときに薄膜材料を着弾させるときの着弾点の分布密度より低くする請求項1乃至8のいずれか1項に記載の薄膜形成方法。
- 前記内部領域に薄膜材料を着弾させるときの液滴の体積を、前記エッジパターンを形成するとき液滴の体積より大きくする請求項9に記載の薄膜形成方法。
- 前記内部領域へ薄膜材料を着弾させた後、該薄膜材料を硬化させるまでの時間が、前記
薄膜パターンを形成する領域の縁へ薄膜材料を着弾させた後、該薄膜材料を硬化させるまでの時間より長い請求項1乃至10のいずれか1項に記載の薄膜形成方法。 - 前記薄膜パターンを形成する領域の縁と交差する仮想的な境界線によって、前記基板の表面を少なくとも2つの領域に区分したとき、
前記エッジパターンを形成する工程、前記内部領域に薄膜材料の液滴を着弾させる工程、及び前記内部領域に着弾した薄膜材料を硬化させる工程を、前記仮想的な境界線の一方の側の領域に対して実行し、その後、前記仮想的な境界線の他方の側の領域に対して実行する請求項1乃至11のいずれか1項に記載の薄膜形成方法。 - 前記内部領域に着弾した薄膜材料が基板面内方向に広がって、複数の着弾点に着弾した薄膜材料が連続し、相互に隣り合う着弾点が区別できなくなった後に、前記内部領域に着弾した薄膜材料を硬化させる請求項1乃至12に記載の薄膜形成方法。
- 前記薄膜材料は光硬化性の材料であり、
前記内部領域に薄膜材料の液滴を着弾させる工程は、前記内部領域のうち、仮想的な境界線の一方の側に薄膜材料の液滴を着弾させ、その後、他方の側に薄膜材料の液滴を着弾させ、
前記内部領域に着弾した薄膜材料を硬化させる工程において、光で照射される領域を、前記仮想的な境界線に沿って移動させながら、前記仮想的な境界の両側の薄膜材料を硬化させる請求項1乃至13のいずれか1項に記載の薄膜形成方法。 - 前記基板の表面に、第1の配線パターンが形成されており、
前記エッジパターンを形成する工程、前記内部領域に、薄膜材料の液滴を着弾させる工程、及び前記内部領域に着弾した薄膜材料を硬化させる工程において形成される前記薄膜パターンが、前記基板及び前記第1の配線パターンを覆うとともに、前記第1の配線パターンの一部を露出させる複数のビアホールを含み、
前記内部領域に着弾した薄膜材料を硬化させる工程の後、さらに、
前記薄膜パターンの上に、前記ビアホールを介して前記第1の配線パターンに接続された第2の配線パターンを形成する工程を有する請求項1乃至14のいずれか1項に記載の薄膜形成方法。 - (a)表面が、形成すべき薄膜パターンの縁を含む第1の領域と、ベタの薄膜が形成される第2の領域とに区分された基板の、前記第1の領域内の、薄膜を形成すべき領域に、光硬化性の薄膜材料を付着させる工程と、
(b)前記工程aの後、前記基板の前記第1の領域に付着した前記薄膜材料に光を照射して、前記薄膜材料を硬化させる工程と、
(c)前記第2の領域内に、前記薄膜材料を付着させる工程と、
(d)前記工程cの後、前記第2の領域基板に付着した前記薄膜材料に光を照射して、前記薄膜材料を硬化させる工程と
を有し、前記第2の領域に付着後、前記工程dで薄膜材料に光照射されるまでの時間が、前記第1の領域に付着後、前記工程bで薄膜材料に光照射されるまでの時間よりも長い薄膜形成方法。 - 基板を保持するステージと、
前記ステージに保持された基板に対向し、前記基板の表面に、光硬化性の薄膜材料の液滴を吐出する複数のノズル孔、及び前記基板に付着した薄膜材料に硬化用の光を照射する光源が設けられているノズルユニットと、
前記ノズルユニットと前記ステージとの一方を他方に対して、前記基板の表面に平行な方向に移動させる移動機構と、
前記基板に形成すべき薄膜パターンの画像データを記憶している制御装置と
を有し、
前記制御装置は、
前記画像データに基づいて、前記薄膜パターンの縁に、前記薄膜材料の液滴が着弾し、前記縁に着弾した薄膜材料に前記光源から光が照射されてエッジパターンが形成された後、前記薄膜パターンを形成する領域の内部に、前記薄膜材料の液滴が着弾し、前記薄膜を形成する領域の内部に着弾した前記薄膜材料に、前記光源から光が照射されるように、前記移動機構、前記ノズルユニット、及び前記光源を制御する薄膜形成装置。 - 前記制御装置は、前記ノズルユニットと前記ステージとの一方を他方に対して第1の方向に移動させながら、前記ノズル孔から薄膜材料の液滴を吐出させ、
前記光源は、前記ノズル孔から吐出された前記薄膜材料の着弾点から、前記第1の方向にずれた位置に光を照射する請求項17に記載の薄膜形成装置。 - 前記光源により前記薄膜材料に照射される光の強度は、前記基板に着弾した薄膜材料の少なくとも表層部が硬化する大きさである請求項17または18に記載の薄膜形成装置。
- 前記制御装置は、前記ノズルユニットと前記基板との一方を他方に対して一方向に移動させながら、前記ノズル孔から薄膜材料を吐出させる処理を1回の走査として、前記基板の1つの領域に対して複数回の走査を行うことにより、前記エッジパターンを形成する請求項17乃至19のいずれか1項に記載の薄膜形成装置。
- 前記制御装置は、複数回の走査を、往復走査により実現する請求項20に記載の薄膜形成方法。
- 前記制御装置は、前記内部領域に薄膜材料を着弾させるときの着弾点の分布密度が、前記エッジパターンを形成するときに薄膜材料を着弾させるときの着弾点の分布密度より低くなるように、前記ノズルユニットを制御する請求項17乃至21のいずれか1項に記載の薄膜形成装置。
- 前記制御装置は、前記内部領域に薄膜材料を着弾させるときの液滴の体積が、前記エッジパターンを形成するとき液滴の体積より大きくなるように前記ノズルユニットを制御する請求項22に記載の薄膜形成装置。
- 前記ノズルユニットは、前記第1の方向に並ぶ複数のノズルヘッドを含み、前記ノズルヘッドの各々に複数の前記ノズル孔が設けられており、前記複数のノズルヘッド全体として、前記第1の方向と直交する方向に等間隔で前記ノズル孔が配列し、
前記光源は、前記ノズルヘッドの間、及び最も外側に配置された前記ノズルヘッドよりも外側に、それぞれ配置されている請求項18に記載の薄膜形成装置。 - 前記ステージに保持される基板の表面に、XY直交座標系を定義したとき、
前記ノズルユニットは、X方向に並ぶ複数のノズル孔からなるノズル列を含み、
前記光源は、縁硬化用光源と、ベタ領域硬化用光源とを含み、
前記縁硬化用光源は、前記ノズル列の脇に配置され、X方向に関して、前記ノズル列から吐出された液滴が付着する領域に光を照射し、
前記ベタ領域硬化用光源は、X方向に関して、前記縁硬化用光源で照射される領域よりもX方向負側にずれた領域に光を照射する請求項17に記載の薄膜形成装置。 - 基板を保持するステージと、
前記ステージに保持された基板に向けて、光硬化性及び絶縁性を有する液状材料を吐出し、該液状材料を前記基板に付着させる複数のノズル孔が設けられているノズルユニットと、
前記ステージ及び前記ノズルユニットの一方を他方に対して、前記基板の表面に平行なY方向に移動させる移動機構と、
前記複数のノズル孔からY方向に離れて配置され、前記基板に付着した液状材料に光を照射することによって該液状材料を硬化させる第1の光源と、
前記複数のノズル孔からY方向に、前記第1の光源よりもさらに離れて配置され、前記基板に付着した液状材料に光を照射することによって該液状材料を硬化させる第2の光源と、
前記基板の表面に形成すべき薄膜パターンを定義する画像データを記憶し、該画像データに基づいて、前記移動機構、前記ノズルユニット、前記第1及び第2の光源を制御する制御装置と、
を備え、
前記制御装置は、前記第1の光源が、前記薄膜パターンの縁を含む第1の領域に付着した液状材料を硬化させ、前記第2の光源が薄膜パターンがベタに形成される第2の領域に付着した液状材料を硬化させるように、前記第1及び第2の光源を制御する薄膜形成装置。 - 前記制御装置は、前記薄膜パターンを、前記第1の領域と第2の領域とに区画する情報を記憶する請求項26に記載の薄膜形成装置。
- 前記第1及び第2の光源は、前記複数のノズルの配列に沿って配列する複数の発光ダイオードにより構成され、該複数の発光ダイオード各々は独立してオン、オフ制御することができる請求項26または27に記載の薄膜形成装置。
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