WO2012157697A1 - 回折格子製造方法、分光光度計、および半導体装置の製造方法 - Google Patents
回折格子製造方法、分光光度計、および半導体装置の製造方法 Download PDFInfo
- Publication number
- WO2012157697A1 WO2012157697A1 PCT/JP2012/062622 JP2012062622W WO2012157697A1 WO 2012157697 A1 WO2012157697 A1 WO 2012157697A1 JP 2012062622 W JP2012062622 W JP 2012062622W WO 2012157697 A1 WO2012157697 A1 WO 2012157697A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- diffraction grating
- mask
- manufacturing
- substrate
- aperture
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 150
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 238000000034 method Methods 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 230000000737 periodic effect Effects 0.000 claims abstract description 14
- 238000005286 illumination Methods 0.000 claims description 52
- 230000003287 optical effect Effects 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 28
- 238000003384 imaging method Methods 0.000 claims description 18
- 238000009826 distribution Methods 0.000 claims description 15
- 238000002834 transmittance Methods 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 12
- 238000012937 correction Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 96
- 235000012431 wafers Nutrition 0.000 description 82
- 238000005516 engineering process Methods 0.000 description 45
- 230000004048 modification Effects 0.000 description 23
- 238000012986 modification Methods 0.000 description 23
- 230000000694 effects Effects 0.000 description 18
- 230000009467 reduction Effects 0.000 description 18
- 239000011295 pitch Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 15
- 238000004088 simulation Methods 0.000 description 15
- 238000012545 processing Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 230000009471 action Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 238000005094 computer simulation Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0262—Constructional arrangements for removing stray light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/18—Generating the spectrum; Monochromators using diffraction elements, e.g. grating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
Definitions
- the present invention relates to a method of manufacturing a diffraction grating that splits incident light for each wavelength.
- the present invention relates to a method for manufacturing a reflective one-dimensional blazed diffraction grating suitable for use in a spectrophotometer and capable of efficiently extracting diffracted light of a specific diffraction order.
- the present invention relates to a diffraction grating manufacturing technique, and more particularly to a technique effective when applied to a method for manufacturing a blazed diffraction grating having a blazed (sawtooth wave) cross-sectional shape.
- the present invention also relates to a technique effective when applied to a method for manufacturing a semiconductor device including an asymmetric shape.
- a wavelength dispersion type spectrophotometer splits light emitted from a light source, and extracts only a light component of a desired wavelength before irradiating the sample. Or after guiding the light emitted from the light source to the sample, only the light component of the desired wavelength is taken out, and the transmittance and reflectance of the sample are measured.
- a diffraction grating in which grooves are periodically arranged in a one-dimensional direction is widely used as a wavelength dispersion element.
- a spectrophotometer is required to perform measurement with a high S / N ratio by effectively using the energy of a light source, only diffracted light of a specific diffraction order can be efficiently extracted as the type of diffraction grating.
- a reflective blazed diffraction grating is preferably used.
- the cross-sectional shape of the groove of the reflective blazed diffraction grating suitable for the spectrophotometer is not a sawtooth shape as shown in FIG. 13B, and the apex angle of the convex portion is approximately 90 degrees as shown in FIG. It has a triangular wave shape that is asymmetrical.
- the blazed diffraction grating mainly contributes to the reflection of diffracted light by the inclined long side, but the diffraction efficiency is maximized when the incident light is perpendicularly incident on the long side.
- sin ⁇ ⁇ / (2d ⁇ cos ⁇ ) Equation 1
- the angle ⁇ is 1 ⁇ 2 of the angle formed by the entrance slit center, the diffraction grating, and the exit slit center in the spectrophotometer.
- the short side may be kept perpendicular to the diffraction grating surface regardless of the inclination angle of the long side.
- the inclination angle of the long side is changed according to the wavelength for which the diffraction efficiency is to be maximized, the inclination angle of the short side with respect to the diffraction grating surface must be changed accordingly.
- a diffraction grating for a spectrophotometer is mainly a mechanical engraving method using a ruling engine or a two-beam interference using a laser. Has been manufactured by the holographic exposure method.
- the groove shape shown in FIG. 13 (a) can be manufactured by the ruling engine by using a diamond cutting edge having an apex angle of approximately 90 degrees as a tool.
- a diffraction grating having a cross-sectional shape of a groove having a sine wave shape or a shape close thereto can be manufactured in the past, but in recent years, as described in Patent Document 1, for example, A technique for manufacturing a blazed diffraction grating by forming a periodic pattern in a photoresist film and performing oblique ion beam etching using the photoresist film as a mask is also disclosed. In recent years, technological advances in the field of semiconductor manufacturing have been remarkable, and as described in Patent Document 2 or 3, a technique for manufacturing a blazed diffraction grating using a photolithography technique is disclosed.
- Examples of the diffraction grating manufacturing technique include (1) a diffraction grating forming technique using a ruling engine and (2) a diffraction grating forming technique using holographic exposure.
- the diffraction grating forming technique using a ruling engine is a technique for forming a blazed diffraction grating by mechanical processing using a ruling engine using a diamond tool.
- the diffraction grating forming technique by holographic exposure is a technique for forming a blazed diffraction grating by performing oblique etching on a resist pattern after holographic exposure.
- techniques relating to holographic exposure include techniques described in Japanese Patent Application Laid-Open No. 2005-11478 (Patent Document 4) and Japanese Patent Application Laid-Open No. 2006-259325 (Patent Document 5).
- a diffraction grating used in a spectrophotometer is required to ensure high diffraction efficiency and low stray light amount.
- the diffraction efficiency of the blazed diffraction grating is the reflective surface corresponding to the long side in the sectional view, which mainly contributes to the diffracted light, out of the two reflective surfaces forming the asymmetric triangular wave-shaped cross section in FIG. It is known that it is determined by the inclination angle, flatness, and squareness of the angle formed by the two surfaces. Also known as causes of stray light are the irregularity of the groove period, the roughness of the reflective surface hitting the long side, and the non-uniformity of the shape near the top where the two surfaces forming the sawtooth waveform intersect. ing.
- the tilt angle, the perpendicularity of the angle formed by the two surfaces, the groove period, and the uniformity of the shape near the top where the two surfaces intersect with each other can be ensured with high accuracy. It is required to achieve good flatness and low roughness.
- the accuracy of the surface to be processed is determined by the shape accuracy and surface accuracy of the tool to be used (generally, a tool having a diamond cutting edge is used). It was difficult to improve the value beyond a certain level.
- the holographic exposure method is more advantageous than the ruling engine in ensuring the flatness and roughness of the surfaces constituting the grooves, but cannot meet the requirement for forming the grooves at arbitrary intervals.
- the technology utilizing the recent semiconductor manufacturing technology that has advanced as described above, both of forming grooves at irregular intervals and improving the surface accuracy of the main reflecting surface It can be easily anticipated that this is advantageous.
- the cross-sectional shape of the groove of the diffraction grating manufactured by the technique described in Patent Document 2 or 3 is a sawtooth shape as shown in FIG. 13B, and the rising angle of the short side is diffracted.
- a technique for making it perpendicular to the grating surface is mentioned, a technique for making the short side orthogonal to the long side that needs to be changed in various ways is not included, and FIG. The asymmetric triangular wave-like cross-sectional shape of a) cannot be ensured.
- the present invention has been made in view of the above, and to produce a diffraction grating suitable for use in a spectrophotometer, having an apex angle of approximately 90 degrees and satisfying high diffraction efficiency and low stray light amount. It is an object to provide a manufacturing technique capable of achieving the above.
- the diffraction grating forming technique by the ruling engine is mechanical processing, there is a limit to accuracy improvement.
- it is a technology dedicated to diffraction gratings and lacks expansibility. That is, only parallel lines can be formed. Also, it takes time to produce.
- the diffraction grating forming technology by holographic exposure requires additional processing, and thus causes manufacturing variations. That is, the diffraction grating has only a sine curve, and further exposure and processing are required to obtain a good diffraction grating. Moreover, a manufacturing apparatus for additional processing is required. In addition, it is difficult to form non-periodic structures, unequal intervals, and the like.
- the present invention has been made in view of the above-mentioned problems of (1) diffraction grating formation technology using a ruling engine, and (2) diffraction grating formation technology using holographic exposure, and its typical purpose is a product. It is an object of the present invention to provide a diffraction grating manufacturing technique capable of improving the accuracy of manufacturing and shortening the manufacturing time.
- a method for manufacturing a diffraction grating wherein a cross-sectional shape of a convex portion of a resist on a substrate formed by exposure is an asymmetric triangle with respect to an opening shape of a mask having an opening portion having a periodic structure.
- the outline of a typical one is applied to a method of manufacturing a diffraction grating having a blazed cross-sectional shape, and the light emitted from the light source is made an asymmetric illumination shape with respect to the optical axis, and a predetermined periodic pattern is formed.
- the mask is transmitted through the mask, and the zero-order light and the first-order light generated by transmitting the mask interfere with each other on the surface of the substrate to expose the photosensitive material on the surface of the substrate.
- a diffraction grating having the following characteristic is formed.
- the focal range in which the zero-order light and the first-order light generated by transmitting through the mask interfere with each other on the surface of the substrate to maintain constant imaging performance is exposed on the defocus side, and a diffraction grating having a blazed cross-sectional shape is formed on the substrate.
- a typical effect can provide a manufacturing technique of a diffraction grating capable of improving product accuracy and shortening manufacturing time.
- FIG. 3 is a view showing the structure of a gray mask used in the diffraction grating manufacturing method according to the first embodiment of the present invention.
- FIG. 3 is a diagram showing a cross section of a diffraction grating manufactured by the diffraction grating manufacturing method according to the first embodiment of the present invention.
- FIG. 5 is a diagram showing a procedure of a diffraction grating manufacturing method according to a first embodiment of the present invention.
- FIG. 6 is a diagram showing another procedure of the diffraction grating manufacturing method according to the first embodiment of the present invention.
- FIG. 3 is a view showing the structure of a gray mask used in the diffraction grating manufacturing method according to the first embodiment of the present invention.
- FIG. 3 is a diagram showing a cross section of a diffraction grating manufactured by the diffraction grating manufacturing method according to the first embodiment of the present invention.
- FIG. 5 is a diagram showing a procedure of a
- FIG. 6 is a diagram showing an effect when the focus value and the exposure amount are changed in the diffraction grating manufacturing method according to the first embodiment of the present invention.
- FIG. 6 is a diagram showing an effect when the ⁇ value of illumination is changed in the diffraction grating manufacturing method according to the first embodiment of the present invention.
- FIG. 6 is a diagram showing another structure of a gray mask used in the diffraction grating manufacturing method according to the first embodiment of the present invention.
- FIG. 5 is a diagram showing the structure of a binary mask used in a diffraction grating manufacturing method according to a second embodiment of the present invention.
- FIG. 5 is a diagram showing the structure of a binary mask used in a diffraction grating manufacturing method according to a second embodiment of the present invention.
- FIG. 6 is a diagram showing a procedure of a diffraction grating manufacturing method according to a second embodiment of the present invention.
- FIG. 10 is a diagram showing another procedure of the diffraction grating manufacturing method according to the second embodiment of the present invention.
- FIG. 11 is a diagram showing an effect when the overlap amount is changed in the diffraction grating manufacturing method according to the second embodiment of the present invention.
- FIG. 6 is a diagram showing the configuration of a spectrophotometer using a diffraction grating manufactured by a diffraction grating manufacturing method according to a third embodiment of the present invention.
- FIG. 15 is a schematic view showing an example of an aperture used in the exposure apparatus shown in FIG.
- FIG. 15 is a schematic view showing examples of masks and resist shapes used in the exposure apparatus shown in FIG.
- FIG. 15 is schematic views showing variations of the aperture and resist shape shown in FIG.
- [Second Technology] (a) and (b) are schematic views showing a first modification of the mask and resist shape shown in FIG. [Second Technology] (a) to (e) are schematic views showing a second modification of the mask and resist shape shown in FIG. [Second Technology] (a) to (d) are schematic views showing a third modification of the mask and resist shape shown in FIG. [Second Technology] (a) to (c) are schematic views showing an example of an aperture and a resist shape used in the exposure apparatus shown in FIG. 14 of the second embodiment of the present invention.
- [Second Technology] (a) and (b) are schematic views showing an example of an exposure apparatus for realizing the diffraction grating manufacturing method according to the third embodiment of the present invention and an aperture used therefor.
- [Second Technology] (a) and (b) are schematic views showing examples of masks and resist shapes used in the exposure apparatus shown in FIG.
- the diffraction grating 100 of FIG. 2 is a reflection type blazed diffraction grating having a groove period of 1.6 ⁇ m, which is suitable for use in a spectrophotometer, and a Zerni-Turner type monochromator with a ⁇ of 12 degrees of Equation 1.
- the highest diffraction efficiency is obtained at a wavelength of 546 nm.
- the inclination angle of the long side is about 10.05 °
- the depth of the groove is about 0.275 ⁇ m.
- FIG. 3 shows a procedure for manufacturing the diffraction grating 100 on the Si wafer.
- the gray mask refers to a photomask so that the exposure amount can be changed in multiple stages for each location in the shot area that is simultaneously exposed by the reduction projection exposure apparatus on a substrate such as a Si wafer. It is assumed that the photomask is configured so that the substantial transmittance can be changed for each location.
- Step 1 A gray mask 10 having a transmittance distribution roughly proportional to the depth distribution of the grooves in the cross section of the diffraction grating to be manufactured is manufactured.
- Step 2 A photoresist is applied to a Si wafer for test exposure with a spin coater and then pre-baked.
- Step 3 The transmittance distribution on the gray mask 10 is transferred to the Si wafer in Step 2 using the gray mask 10 by the reduction projection exposure apparatus.
- the focus value of the exposure apparatus, the exposure amount, the numerical aperture of the exposure lens, and the ⁇ value of illumination ( ⁇ value is the numerical aperture of the projection lens viewed from the exposure surface while changing the region on the Si wafer.
- the ratio of the numerical aperture of the light source with respect to is changed in a plurality of stages, and the transfer is repeated a plurality of shots.
- Step 4 After developing the Si wafer in Step 3, post-bake is performed.
- Step 5 Measure the cross-sectional shape of the three-dimensional photoresist pattern formed on the Si wafer in Step 4.
- a shot that best matches the cross-sectional shape of the diffraction grating to be manufactured (for example, FIG. 3 in this embodiment) is selected, and the focus value and exposure amount are recorded as the optimum exposure conditions.
- Step 6 If there is no good match with the cross-sectional shape of the diffraction grating to be manufactured in any shot, change the transmittance distribution of the gray mask 10 manufactured in Step 1 to manufacture a new gray mask. Then, the procedure from step 2 to step 5 is repeated again. If there is a shot that closely matches the cross-sectional shape of the diffraction grating to be manufactured, the process proceeds to step 7.
- Step 7 A photoresist is applied to a Si wafer for manufacturing a diffraction grating by a spin coater, and then pre-baked.
- Step 8 Transfer the transmittance distribution on the gray mask 10 to the Si wafer in step 7 using the gray mask 10 with a reduction projection exposure apparatus. At this time, the focus value and the exposure amount recorded in step 5 are set in the exposure apparatus.
- Step 9 After developing the Si wafer in Step 8, post-bake is performed.
- Step 10 An Al film is formed on the Si wafer in Step 9.
- Step 11 The diffraction grating formed in Step 10 is cut out to an appropriate size.
- a diffraction grating in which the apex angle of the convex portion is approximately 90 degrees and can satisfy a high diffraction efficiency and a low stray light amount.
- a diffraction grating having an apex angle of approximately 90 degrees can be manufactured.
- the procedure from Step 1 to Step 6 in FIG. 3 is the one in which the gray mask is actually manufactured and the exposure test is performed using the Si wafer. Instead, the optimum conditions of the exposure apparatus are determined by computer simulation. You can also.
- a computer simulation means (hereinafter referred to as an exposure simulator) gives gray mask transmittance distribution data, exposure characteristics of a reduced projection exposure apparatus, characteristics such as photoresist sensitivity, and other real parameters.
- an exposure simulator gives gray mask transmittance distribution data, exposure characteristics of a reduced projection exposure apparatus, characteristics such as photoresist sensitivity, and other real parameters.
- the three-dimensional shape of the three-dimensional photoresist pattern that will be formed as a result of performing steps 1 to 4 in FIG. 3 can be obtained as numerical data by computer simulation. Can be used to determine the optimum exposure conditions.
- Fig. 4 shows a diffraction grating manufacturing procedure when using an exposure simulator.
- an actual gray mask manufacturing step (step 5 in FIG. 4) is inserted before step 7 in FIG.
- FIG. 1 shows the structure of the gray mask 10 used in the procedure shown in FIG.
- a gray mask 10 shown in FIG. 1 is a binary mask constituted by either an opening that allows an exposure light beam to pass with a substantially constant high transmittance and a light-shielding portion that is not substantially blocked and passed for each location.
- the length of the long side and the short side of the small aperture represented by one rectangle in 1 is set to be equal to or less than the resolution limit of the reduction projection exposure apparatus used in the above procedure. For this reason, in the light amount distribution projected onto the Si wafer through the reduction projection exposure apparatus, the small apertures in FIG. 1 are not resolved at all, and are proportional to the aperture ratio of the small apertures at each location. Thus, it substantially acts as a gray mask whose transmittance changes continuously.
- the small apertures having the same width are arranged in a direction orthogonal to the longitudinal direction of the grooves of the diffraction grating 100.
- the small openings having the same width may be arranged in a direction parallel to the longitudinal direction of the grooves of the diffraction grating 100.
- the shape of the small aperture may be changed from a rectangle with a different width to a circle with a different diameter, and the distribution density changes with a circle with a constant diameter. It may be arranged.
- FIG. 5 shows an example of the cross-sectional shape of a three-dimensional photoresist pattern formed when exposure is performed using the gray mask 10 of FIG. 1 while changing the exposure amount and the focus value in step 2 of FIG. It can be seen that the cross-sectional shape when the focus value is ⁇ 0.4 ⁇ m and the exposure amount is 180 mJ / cm 2 is closest to the cross-sectional shape of FIG.
- the focus value and the exposure amount are set to the above combination, the numerical aperture (NA) of the exposure lens is fixed to 0.6, and the exposure sigma ( ⁇ ) value is changed to perform exposure.
- An example of the cross-sectional shape of the three-dimensional photoresist pattern is shown in FIG. It can be seen that the cross-sectional shape when the ⁇ value is 0.6 is closest to the cross-sectional shape of FIG. In this case, the ⁇ value of illumination is determined to be 0.6.
- the cross-sectional shape of the formed three-dimensional photoresist pattern and the cross-sectional shape of the diffraction grating may be added to the cross-sectional shape data in step 1 of FIG. 3 or FIG.
- the cause of the difference between the cross-sectional shape of the formed three-dimensional photoresist pattern and the cross-sectional shape of the diffraction grating to be manufactured is that the resolution of the reduction projection exposure apparatus is insufficient or the aperture ratio distribution changes in the gray mask 10.
- the correction term is a higher-order spatial frequency component than the repetition period of the grooves of the diffraction grating, since the number is usually due to the lack of the number of harmonics.
- the diffraction grating You may add what multiplied the appropriate coefficient to the Sin waveform used as the harmonic of the repetition period of this groove
- the case where the groove interval of the diffraction grating is constant has been described.
- the aberration that occurs when the diffraction grating is used in a spectrophotometer is reduced, and the light condensing action is performed simultaneously with the spectral action.
- the transmittance distribution corresponding to the groove arrangement on the gray mask 10 may be made unequal.
- reduction projection exposure is performed using a gray mask, and the cross-sectional shape of the three-dimensional photoresist pattern formed at that time is matched with the cross-sectional shape of the diffraction grating to be manufactured. Therefore, since it is configured to control at least one of the focus of the reduction projection exposure apparatus, the exposure amount, the numerical aperture of the exposure lens, the illumination ⁇ value, and the transmittance distribution on the gray mask, it is used for the spectrophotometer. Therefore, a blazed diffraction grating having an apex angle of approximately 90 ° and a highly accurate cross-sectional shape can be manufactured.
- the exposure wavelength of the reduction projection exposure apparatus uses an ultraviolet region, for example, a wavelength of 365 nm, 248 nm, 193 nm, etc., but may be another wavelength.
- the photoresist is applied directly on the Si wafer.
- the photoresist is applied on the Si wafer before applying the photoresist.
- An antireflection film may be applied.
- an Al film is directly formed on the formed three-dimensional photoresist pattern.
- a dielectric film is formed on the three-dimensional photoresist pattern as a protective coating.
- a film may be formed.
- an Al film formed on a three-dimensional photoresist pattern formed on the Si wafer is used as a diffraction grating as it is, but the Si wafer is used with the three-dimensional photoresist pattern as an etching mask.
- the Si wafer is used with the three-dimensional photoresist pattern as an etching mask.
- the surface shape of the three-dimensional photoresist pattern is transferred to another substrate, for example, a glass substrate, by transferring the cross-sectional shape of the three-dimensional photoresist pattern onto the Si wafer itself.
- the substrate may be used as a diffraction grating by being transferred onto a material coated with a resin for application by pressure bonding or the like.
- a low gamma photoresist in which the difference in the remaining photoresist film thickness between the exposed portion and the unexposed portion is approximately proportional to the exposure amount of the exposed portion can be used.
- FIG. 9 shows a procedure for manufacturing the diffraction grating 100 on the Si wafer.
- Step 1 A binary mask 20 is manufactured in which a plurality of linear slit-shaped openings having a width obtained by roughly dividing a groove period of a diffraction grating to be manufactured are arranged in parallel corresponding to the groove period.
- Step 2 A photoresist is applied to a Si wafer for test exposure with a spin coater and then pre-baked.
- Step 3 The Si wafer of Step 2 is exposed by changing the exposure amount for each shift by discretely shifting the binary mask 20 in the arrangement direction of the grooves of the diffraction grating by a reduction projection exposure apparatus. At this time, while changing the area on the Si wafer, the focus value of the exposure apparatus, the exposure amount for each shift, the numerical aperture of the exposure lens, and the ⁇ value of illumination are changed in multiple stages, and the transfer is performed in multiple shots. repeat.
- Step 4 After developing the Si wafer in Step 3, post-bake is performed.
- Step 5 The cross-sectional shape of the three-dimensional photoresist pattern formed on the Si wafer in Step 4 is measured, and the cross-sectional shape best matches the cross-sectional shape of the diffraction grating to be manufactured (for example, FIG. 13A). A shot is selected, and the focus value and exposure level for each shift are recorded as optimum exposure conditions.
- Step 6 If a good match with the cross-sectional shape of the diffraction grating to be manufactured is not found in any shot, change the opening width of the binary mask 20 manufactured in Step 1 and install a new binary mask. Then, repeat steps 2 to 5 again. If there is a shot that closely matches the cross-sectional shape of the diffraction grating to be manufactured, the process proceeds to step 7.
- Step 7 Photoresist is applied to the Si wafer having a diffraction grating manufacturing action by a spin coater, and then pre-baked.
- Step 8 The binary mask 20 is discretely shifted with respect to the Si wafer in Step 7 by the reduction projection exposure apparatus in the arrangement direction of the grooves of the diffraction grating, and exposure is performed with an exposure amount determined for each shift. At this time, the focus value recorded in step 5 and the exposure level for each shift are set in the exposure apparatus.
- Step 9 After developing the Si wafer in Step 8, post-bake is performed.
- Step 10 An Al film is formed on the Si wafer in Step 9.
- Step 11 The diffraction grating formed in Step 10 is cut out to an appropriate size.
- Step 1 to Step 6 in FIG. 9 The procedure from Step 1 to Step 6 in FIG. 9 is as shown in FIG. 10 when the optimum exposure condition is determined using the exposure simulator as in the first embodiment.
- FIG. 8 shows the structure of the binary mask 20 used in the procedure shown in FIG. 9 or FIG.
- the binary mask shown in FIG. 8 is composed of a linear slit having an opening that allows the exposure light beam to pass therethrough at a substantially constant high transmittance and a periodic repetition of a light shielding portion that exists between the opening and that does not allow the exposure light beam to substantially pass through.
- the This repetition period corresponds to the groove period P of the diffraction grating to be manufactured.
- the width W in the short side direction of the opening is a width obtained by roughly dividing the groove period of the diffraction grating to be manufactured into N (W> P / N).
- the larger N is, the smoother the flatness of the reflection surface of the formed three-dimensional photoresist pattern is.
- the focus, exposure amount, exposure lens numerical aperture, and illumination ⁇ value of the reduction projection exposure device are changed so that the cross-sectional shape of the formed three-dimensional photoresist pattern is closest to the cross-sectional shape of the diffraction grating to be manufactured.
- the process and the necessary configuration are the same as in the first embodiment.
- FIG. 12 shows the configuration of a spectrophotometer equipped with the diffraction grating 100 manufactured by the diffraction grating manufacturing method shown in the first embodiment or the second embodiment of the present invention.
- the monochromator 202 has a built-in diffraction grating 100 driven by a wavelength driving system 209, and takes out monochromatic light having a desired measurement wavelength in accordance with a command from the CPU 207.
- the monochromatic light is divided into a sample-side light beam 203 and a reference-side light beam 204, and then the sample-side light beam 203 passes through the sample 205 and is affected by the spectral absorption characteristics of the sample. At this time, if the concentration of the sample is high, it will be strongly absorbed, and the sample-side light beam 203 after passing through the sample 205 will show a weak intensity.
- the photometric value includes an error corresponding to the intensity of the stray light.
- the sample-side light beam 203 and the reference-side light beam 204 each enter the photodetector 206.
- the output signal of the photodetector 206 is taken into the CPU 207, and the absorbance of the sample 205 at a desired wavelength is calculated from the intensity ratio between the two, and the absorbance is converted into the concentration of the sample 205.
- a diffraction grating manufacturing method shown in the first embodiment or the second embodiment of the present invention a diffraction grating with high diffraction efficiency and little stray light can be manufactured. If the meter is configured, even a sample having a high concentration and a large light absorption amount can accurately measure the light amount of the weak light to be measured with good S / N and the density value with good linearity.
- the constituent elements are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say.
- the shapes, positional relationships, etc. of the components, etc. when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges.
- the method for manufacturing a diffraction grating according to an embodiment of the present invention is applied to a method for manufacturing a diffraction grating having a blazed cross-sectional shape, and the light emitted from the light source (illumination light source 10) is asymmetric with respect to the optical axis.
- the illumination pattern (using the aperture 20) is transmitted through a mask (mask 40) having a predetermined periodic pattern, and the zero-order light and the primary light generated by transmitting the mask are transmitted to the substrate (Si wafer 60). ),
- the photosensitive material (photoresist 70) on the surface of the substrate is exposed, and a diffraction grating having a blazed cross-sectional shape is formed on the substrate (for example, in ()
- an aperture having an opening asymmetric with respect to the optical axis is used.
- a mask in which a pattern is arranged corresponding to the blazed pitch (equal interval, unequal interval) of the diffraction grating is used. Then, when exposing the photoresist on the surface of the Si wafer, the light emitted from the light source is transmitted through the mask through the aperture, and the zero-order light and the first-order light generated by transmitting the light through the mask are converted into Si.
- Photoresist is exposed on the defocus side (+ defocus side, -defocus side) of the focus range where interference can be maintained on the wafer surface to maintain a constant imaging performance, and a blazed cross-sectional shape is formed on the Si wafer. Having a diffraction grating. A specific description will be given below with reference to FIGS.
- FIG. 14 is a schematic view showing an example of this exposure apparatus. 14, (a) is an outline of the exposure apparatus, (b) is the shape of the aperture, (c) is the shape of the mask, (d) is the details of the periphery of the DOF that exposes the photoresist on the Si wafer, (e). Indicates an optical image and a resist shape at the + defocus position and the ⁇ defocus position, respectively.
- the exposure apparatus includes an illumination light source 10, an aperture 20, a condensing lens 30, a mask 40, a projection lens 50, and the like as shown in FIG.
- This exposure apparatus is an apparatus that exposes the photoresist 70 applied to the surface of the Si wafer 60 by applying a three-dimensional resist pattern forming technique using a modified illumination method.
- the illumination light source 10 is a light source for performing exposure.
- g-line, i-line, excimer laser such as KrF, ArF, or the like is used for the illumination light source 10.
- the aperture 20 includes an opening 21 that is asymmetric with respect to the optical axis of the illumination light source 10, and the light emitted from the illumination light source 10 is transmitted along the optical axis. This is for making the illumination shape asymmetric with respect to.
- the opening 21 is a part that transmits light, and the other part is a light shielding part 22 that blocks light.
- a circular opening 21 (white display) is provided on the right side with respect to the optical axis (intersection of the X axis and the Y axis).
- the condensing lens 30 is a lens for condensing the light transmitted through the opening 21 of the aperture 20 on the mask 40.
- the mask 40 is provided with a predetermined periodic pattern, and a pattern is arranged corresponding to the blazed pitch of the diffraction grating. .
- the pattern of the mask 40 is formed by repetition of a line 41 that is a light-shielding part that shields light and a space 42 that is a transmissive part that transmits light.
- a line 41 that is a light-shielding part that shields light
- a space 42 that is a transmissive part that transmits light.
- four equally spaced lines 41 black line display
- spaces 42 white display
- the projection lens 50 is a lens for projecting a repetitive pattern of the line 41 and the space 42 of the mask 40 onto the photoresist 70 of the Si wafer 60.
- a reduction projection type exposure apparatus that reduces and projects the pattern of the mask 40 will be described as an example.
- the modified illumination method is used.
- This modified illumination method is an illumination method in which an aperture 20 having an opening 21 that is not on the optical axis of the optical system is inserted and an exposure light beam is obliquely incident on the mask 40.
- this modified illumination method it is possible to improve resolution and DOF (depth of focus) by performing exposure with only the 0th order light and the 1st order light diffracted by the mask 40.
- This DOF is a focal range in which a constant imaging performance can be maintained.
- the defocus position ( ⁇ defocus) on the ⁇ side (closer to the illumination light source 10) and the + side (illumination) with respect to the just focus position of this DOF.
- the photoresist 70 on the Si wafer 60 is exposed at a defocus position (+ defocus) far from the light source 10.
- the resist shape can be formed with a blazed cross-sectional shape, and the shape is inverted between the + defocus position and the ⁇ defocus position. That is, at the position of ⁇ defocus, the sawtooth wave has a sharp inclination in the left V-shaped groove and a gentle inclination in the right V-shaped groove from the top of the sawtooth wave. From each top of the sawtooth wave, a sawtooth with a gentle slope in the left V-shaped groove and a steep slope in the right V-shaped groove.
- the photoresist 70 on the surface of the Si wafer 60 is exposed by the exposure apparatus using the modified illumination method as described above, the light emitted from the illumination light source 10 is transmitted through the aperture 20.
- the 0th order light and the 1st order light that are transmitted through the mask 40 are caused to interfere with each other on the surface of the Si wafer 60, and the photoresist is formed at the DOF + defocus position or -defocus position.
- 70 is exposed to form a diffraction grating in which a photoresist 70 having a blazed cross-sectional shape is formed on a Si wafer 60.
- FIG. 15 is a schematic view showing an example of an aperture used in the exposure apparatus.
- FIG. 16 is a schematic view showing an example of a mask and a resist shape used in an exposure apparatus, where (a) is an outline of the mask, (b) is a cross-sectional shape of a photoresist corresponding to the mask of (a), and (c). Indicates the cross-sectional shape of the photoresist corresponding to the mask of (a) by simulation.
- the example of the cross-sectional shape of the photoresist shown in FIGS. 16B and 16C is a case where exposure is performed at the position of + defocus. It should be noted that the shape is reversed when exposure is performed at the position of -defocus.
- An aperture 20 having an opening 21 asymmetric with respect to the optical axis is prepared.
- the aperture 20 is provided with a circular opening 21 (white display) that transmits light on the right side of the optical axis.
- the mask 40 is provided with four equally spaced lines 41 (black line display) for blocking light, and a space 42 for transmitting light between the lines 41. It has been.
- a photoresist is applied to a Si wafer for test exposure using a spin coater and then pre-baked.
- a pattern is transferred to the Si wafer of (3) above using a mask 40 and a reduction projection type exposure apparatus. At this time, exposure is performed on the + defocus side or on the defocus side of the DOF, and while changing the area on the Si wafer, the focus value of the exposure apparatus, the exposure amount, and the numerical aperture of the exposure lens are changed in a plurality of stages, respectively. Repeat multiple shots.
- step (8) If no good match with the cross-sectional shape of the diffraction grating to be manufactured is found in any shot, change the aperture area, aperture position, and aperture shape of the aperture 20 in (1) above, and The above steps (3) to (6) are repeated again using the aperture 20. If there is a shot that closely matches the cross-sectional shape of the diffraction grating to be manufactured, the process proceeds to the following step (8) in order to manufacture a diffraction grating as a product.
- a photoresist 70 is applied to the Si wafer 60 having a diffraction grating manufacturing action by a spin coater and then pre-baked.
- the mask 40 is transferred to the Si wafer 60 of (8) above by using a reduction projection type exposure apparatus using the aperture 20 having the opening 21 asymmetric with respect to the optical axis. At this time, exposure is performed on the + defocus side or ⁇ defocus side of the DOF, and the focus value and exposure amount of the optimum exposure condition recorded in the above (6) are set in this exposure apparatus.
- FIG. 17 is a schematic view showing a modification of the aperture and the resist shape.
- (a) to (e) show the cross-sectional shape of the photoresist by simulation together with the shape of the aperture. Further, in order to easily understand the difference in the shape of the modified example, the example of the circular opening shown in FIG. 15 is also illustrated as (a).
- FIG. 17B shows an aperture 20a provided with a semicircular opening 21a (white display)
- FIG. 17C shows an aperture 20b provided with two circular openings 21b (white display).
- FIG. FIG. 17E shows an example of an aperture 20d having a half ring-shaped opening 21c (white display)
- FIG. 17E shows an aperture 20d having a 1/6 ring-shaped opening 21d (white display).
- FIG. 18 is a schematic diagram showing a first modification of the mask and resist shape.
- 18A shows an outline of the mask
- FIG. 18B shows a cross-sectional shape of the photoresist corresponding to the mask of FIG.
- Diffraction gratings can be similarly formed not only on the mask 40 having an equally spaced layout pattern shown in FIG. 16 (a) but also on the mask 40a having an irregular spacing as shown in FIG. 18 (a).
- the mask 40a shown in FIG. 18A five lines 41 (black line display) are provided at different pitches.
- a diffraction grating in which blazed photoresists 70 are formed at unequal intervals on an Si wafer 60 and an Al film is further formed on the photoresist 70. Can be manufactured.
- Such unequally spaced diffraction gratings include, for example, (1) when reducing the aberration of a concave diffraction grating and improving resolution, (2) the imaging surface of the concave diffraction grating is a curved surface, This is used when the imaging surface is made flat so that a diode array detector or a CCD (Charge Coupled Device) can be used, or (3) an imaging performance is given to a planar diffraction grating.
- CCD Charge Coupled Device
- FIG. 19 is a schematic view showing a second modification of the mask and resist shape.
- 19A shows an outline of a mask with an auxiliary pattern (Y direction)
- FIG. 19B shows an outline of a mask with an auxiliary pattern (X direction)
- FIG. 19C shows a mask without an auxiliary pattern by simulation.
- the cross-sectional shape of the photoresist (d) is the cross-sectional shape of the photoresist corresponding to the mask with the auxiliary pattern (Y direction) by simulation
- (e) is the auxiliary pattern (X direction) of (b) by simulation
- the cross-sectional shapes of the photoresist corresponding to a certain mask are shown.
- the aperture 20 (20a to 20d) having an opening asymmetric with respect to the optical axis as described above is used, and the auxiliary pattern lines other than the main pattern line 41a (black line display) shown in FIG.
- the arranged mask 40c is used.
- the angle (depth) of the blazed diffraction grating can be changed by adjusting the size of the auxiliary pattern (line width, number of lines, etc.).
- the angle of the blazed diffraction grating is also called a blaze angle and is indicated by ⁇ in FIG.
- the depth of the blazed diffraction grating is indicated by d in FIG.
- FIG. 19 (a) An auxiliary pattern (Y direction) shown in FIG. 19 (a) with respect to the cross-sectional shape of the photoresist 70 shown in FIG. 19 (c) corresponding to a mask without an auxiliary pattern (corresponding to the mask 40 shown in FIG. 16 (a)).
- the blazed angle can be reduced. In other words, the depth can be reduced.
- the blazed angle is made small (the depth is made shallow). can do.
- a diffraction grating capable of changing such an angle (depth)
- it is used when the angle is the same or different in one diffraction grating (same pitch).
- the angle as shown in FIG. 19 (c) is large (the depth is deep), as shown in FIGS. 19 (d) and 19 (e).
- the diffraction grating is divided into four, and the angle is reduced (shallow depth), large (deep), small, and large.
- it is used for increasing the diffraction efficiency in a wide wavelength region.
- FIG. 20 is a schematic diagram showing a third modification of the mask and resist shape.
- (a) is an outline of a line-and-space mask arranged below the resolution limit
- (b) is a cross section of a photoresist corresponding to the mask of (a) line-and-space having a length of 100 nm by simulation.
- (C) is a cross-sectional shape of a photoresist corresponding to a mask having a line and space length of 150 nm by simulation (a)
- (d) is a line and space length of 200 nm by simulation (a).
- the cross-sectional shape of the photoresist corresponding to the mask is shown.
- the aperture 20 (20a to 20d) having an opening asymmetric with respect to the optical axis as described above is used, and a fine line-and-space 44 (line of space) having a pitch below the resolution limit shown in FIG.
- a mask 40d arranged at the pitch of the desired diffraction grating is used. In the mask 40d, by changing the length X of the line and space 44, the angle (depth) of the diffraction grating can be changed.
- the blazed angle is increased (the depth is increased) as the length X of the line and space 44 is changed from 100 nm ⁇ 150 nm ⁇ 200 nm.
- a diffraction grating capable of changing such an angle (depth) is used for the same application as the diffraction grating as shown in FIG.
- the aperture 20 (20a to 20d) having the openings 21 (21a to 21d) that are asymmetric with respect to the optical axis is used, and the diffraction grating has a blazed pitch.
- the mask 40 (40a to 40d) in which the pattern is arranged correspondingly the light emitted from the illumination light source 10 is transmitted through the aperture 40 (20a to 20d) through the mask 40 (40a to 40d).
- the zero-order light and the first-order light generated by transmitting through the mask 40 are caused to interfere with each other on the surface of the Si wafer 60, and the surface of the Si wafer 60 on the + defocus side or ⁇ defocus side of the DOF.
- the photoresist 70 is exposed and blazed on the Si wafer 60 at equal or different intervals and at the same angle (depth) or different angles (depth).
- the production time can be shortened (for example, master creation: 1 month / sheet ⁇ 1 day / sheet) and accuracy can be improved, and other than parallel lines can be formed.
- the lithography technique is a technique for transferring an arbitrary mask layout pattern to a photoresist coated on a Si wafer, it is possible to form a pattern with unequal intervals.
- there is an application technique that allows the blaze angle to be changed by arranging the auxiliary pattern it is possible to simultaneously form diffraction gratings having different blaze angles and depths.
- the first aperture having an asymmetric opening with respect to the optical axis, and the first aperture are provided.
- a second aperture having an opening asymmetric with respect to the aperture is used.
- the mask a mask in which a pattern is arranged corresponding to the blazed pitch (equal interval, unequal interval) of the diffraction grating is used.
- the light emitted from the light source is transmitted through the mask through the first aperture and the second aperture, and the zero-order light generated by transmitting through the mask Defocus side (+ defocus side, -defocus side, + defocus side, and -defocus side) in the focal range that can maintain primary imaging performance by interfering with primary light on the surface of the Si wafer
- the photoresist is exposed to form a diffraction grating having a blazed cross section on the Si wafer.
- FIG. 21 is a schematic diagram showing an example of an aperture and a resist shape used in an exposure apparatus, and (a) is a cross-sectional shape of a photoresist by simulation when DOF is applied only to the right side of the modified illumination method using the first aperture, (B) is a cross-sectional shape of a photoresist by simulation when DOF is applied only to the left side of the modified illumination method using the second aperture, and (c) is a double view of the modified illumination method using the first aperture and the second aperture.
- the cross-sectional shape of the photoresist by simulation when the exposure DOF is applied is shown.
- the aperture 20 shown in FIG. 21 (a) is the same as the aperture shown in FIG. 15, and a circular opening 21 (white display) that transmits light is provided on the right side with respect to the optical axis.
- the cross-sectional shape of the photoresist is x (poor) at a defocus position of -1.5 ⁇ m, and ⁇ (slightly good) at a defocus position of ⁇ 1.3 ⁇ m. -1.1 ⁇ m, -0.9 ⁇ m, and -0.7 ⁇ m at the defocused position ⁇ (good), -0.5 ⁇ m at the defocused position ⁇ , -0.3 ⁇ m and -0.1 ⁇ m-
- the result was x at the defocus position.
- the aperture 80 shown in FIG. 21 (b) is provided with the opening 21 inverted with respect to the aperture 20 shown in FIG. 21 (a), and has a circular opening 21 (white display) that transmits light. ) Is provided on the left side of the optical axis.
- the cross-sectional shape of the photoresist is as follows:-at a defocus position of -0.1 ⁇ m, ⁇ at a + defocus position of +0.1 ⁇ m, +0.3 ⁇ m and +0.5 ⁇ m. The result was ⁇ at the + defocus position of +0.7 ⁇ m, ⁇ at the + defocus position of +0.9 ⁇ m, and ⁇ at the + defocus positions of +1.1 ⁇ m and +1.3 ⁇ m.
- the aperture 20 shown in FIG. 21A and the aperture 80 shown in FIG. The first exposure is performed using the aperture 20 shown in FIG. 21A, and the second exposure is performed using the aperture 80 shown in FIG. 21B.
- the cross-sectional shape of the photoresist is ⁇ 1.5 ⁇ m and ⁇ 0.1 ⁇ m, ⁇ 1.3 ⁇ m and +0.1 ⁇ m, ⁇ 1.1 ⁇ m and +0.3 ⁇ m, Defocusing positions of -0.9 and +0.5, -0.7 and +0.7, -0.5 and +0.9, -0.3 and +1.1, and -0.1 and +1.3, respectively In both cases, the result was ⁇ .
- double exposure is performed between the ⁇ defocus positions, the combination of the ⁇ defocus positions and the + defocus positions, or the + defocus positions which are not in this example. By doing so, it is possible to improve the focus margin and form a diffraction grating.
- a method for manufacturing a diffraction grating double exposure
- a mask 40 (for example, the mask shown in FIG. 16A of the first embodiment) in which line patterns are arranged at the pitch of the diffraction grating to be manufactured is prepared.
- a pattern is transferred to one Si wafer of (3) above using a reduction projection type exposure apparatus using the aperture 20 and the mask 40.
- exposure is performed on the + defocus side and / or ⁇ defocus side of the DOF, and the focus value of the exposure apparatus, the exposure amount, and the numerical aperture of the exposure lens are changed in multiple stages while changing the area on the Si wafer. Repeat the transfer multiple shots.
- the same exposure is performed using the aperture 80 and the mask 40 on the other one of the Si wafers of the above (3).
- step (8) If there is a shot that closely matches the cross-sectional shape of the diffraction grating to be manufactured, the process proceeds to the following step (8) in order to manufacture a diffraction grating as a product.
- a photoresist is applied to a Si wafer having a diffraction grating manufacturing action by a spin coater and then pre-baked.
- the mask 40 is formed by a reduction projection type exposure apparatus using apertures 20 and 80 in which the illumination shape is asymmetric with respect to the optical axis and the shape is mirror-inverted. Transfer twice. At this time, exposure is performed on the + defocus side and / or ⁇ defocus side of the DOF, and the exposure apparatus sets the focus value of the optimum exposure condition recorded in the above (6) and a value 1 ⁇ 2 of the exposure amount. To do.
- the aperture can be modified in the same manner as in the first embodiment.
- the apertures shown in FIGS. 17B to 17E are also shown. If the apertures 20a to 20d and the apertures 20a to 20d are mirror-inverted, the diffraction grating can be formed in the same manner.
- the mask can be modified in the same manner as in the first embodiment.
- the unequal-spaced mask 40a shown in FIG. Masks 40b and 40c that can change the angle (depth) at which the auxiliary pattern is arranged in addition to the main pattern shown in FIGS. 19A and 19B, and line and space below the resolution limit shown in FIG.
- a diffraction grating can be formed in a similar manner for the mask 40d that can change the angle (depth) at which the is disposed.
- the aperture 20 (20a to 20d) having an asymmetric opening with respect to the optical axis, and the aperture having the asymmetric opening reversed with respect to the aperture 20 are provided.
- an aperture having an opening symmetrical to the optical axis is tilted with respect to the optical axis.
- a mask in which a pattern is arranged corresponding to the blazed pitch (equal interval, unequal interval) of the diffraction grating is used. Then, when exposing the photoresist on the surface of the Si wafer, the light emitted from the light source is transmitted through the mask through the aperture, and the zero-order light and the first-order light generated by transmitting the light through the mask are converted into Si.
- Photoresist is exposed on the defocus side (+ defocus side, -defocus side) of the focus range where interference can be maintained on the wafer surface to maintain a constant imaging performance, and a blazed cross-sectional shape is formed on the Si wafer. Having a diffraction grating.
- the differences from the first and second embodiments will be specifically described mainly with reference to FIGS.
- FIG. 22 is a schematic view showing an example of this exposure apparatus and an aperture used therefor, (a) shows an outline of the illumination tilt method used in the exposure apparatus, and (b) shows the shape of the aperture.
- FIG. 23 is a schematic view showing an example of a mask and a resist shape used in the exposure apparatus shown in FIG. 22, where (a) is an outline of the mask, and (b) is a photoresist corresponding to the mask of (a) by simulation. The cross-sectional shape of each is shown.
- the illumination shape is not asymmetrical as in the first and second embodiments, and the aperture 90 is tilted as shown in FIG. It is what I did. That is, as the aperture 90, as shown by a broken line in FIG. 22B, an aperture provided with an opening 23 symmetrical to the optical axis is used.
- the aperture 90 is inclined by an inclination angle (for example, 20 °) with respect to the X axis passing through the optical axis.
- an illumination shape having an opening 24 (white display) that is pseudo-asymmetric with respect to the optical axis.
- an equally spaced mask 40 (same as FIG. 16A) as shown in FIG. 23A is used, and as shown in FIG. 23B.
- a diffraction grating in which a photoresist 70 having a blazed cross-sectional shape is formed can be formed.
- the aperture can be modified in the same manner as in the first embodiment.
- the aperture 20a shown in FIGS. 17 (b) to 17 (e) can be used.
- the aperture has a symmetric opening with respect to the optical axis by changing ⁇ 20d
- the diffraction grating can be formed by similarly inclining and exposing. For example, if FIG. 17 (b) is changed, an aperture with a circular opening is changed, if FIG. 17 (c) is changed, an aperture with four circular openings is changed, and if FIG. 17 (d) is changed, a ring is provided. If the aperture provided with a shape-shaped opening, FIG. 17 (e) is changed, it becomes an aperture provided with two 1/6 ring-shaped openings.
- the mask can be modified in the same manner as in the first embodiment.
- the unequal-spaced mask 40a shown in FIG. Masks 40b and 40c that can change the angle (depth) at which the auxiliary pattern is arranged in addition to the main pattern shown in FIGS. 19A and 19B, and line and space below the resolution limit shown in FIG.
- a diffraction grating can be formed in a similar manner for the mask 40d that can change the angle (depth) at which the is disposed.
- the aperture 90 having an opening symmetric with respect to the optical axis is tilted with respect to the optical axis, and a pattern corresponding to the blazed pitch of the diffraction grating is used.
- the light emitted from the illumination light source is transmitted through the mask 40 (40a to 40d) through the aperture 90 and transmitted through the mask 40 (40a to 40d).
- the zero-order light and the first-order light generated by this phenomenon interfere with each other on the surface of the Si wafer, and the photoresist is exposed on the + defocus side or the ⁇ defocus side of the DOF, so that it is evenly spaced or unevenly spaced on the Si wafer.
- manufacturing the diffraction grating in which a photoresist having a blazed cross-sectional shape is formed at the same angle (depth) or at different angles (depths). It is possible to obtain the same effect as state 1.
- the illumination shape is asymmetric with respect to the optical axis using an aperture.
- the present invention is not limited to this. It is also possible to use a device that emits light having an illumination shape asymmetric with respect to the optical axis from the illumination light source itself.
- the shape of the opening and the like can be variously modified without being limited to the aperture having the opening of each shape as shown in FIG. Further, when the blaze angle (depth) is changed, a mask different from the auxiliary pattern as shown in FIG. 19 or the line and space as shown in FIG. 20 can be used. .
- this invention is not limited to the manufacturing method of a diffraction grating, It can apply to the manufacturing method of the semiconductor device containing an asymmetrical shape.
- an asymmetric shape is required as a cross section for a part of MEMS (Micro Electro Mechanical Systems)
- Embodiments 1 to 3 can be applied to form an asymmetric cross sectional shape on a semiconductor substrate.
- the asymmetric cross-sectional shape is not limited to the photosensitive material, and by applying a known semiconductor etching method, the cross-sectional shape of the photosensitive material is transferred to the semiconductor substrate to form an asymmetric cross-sectional shape on the semiconductor substrate. Can do.
- the diffraction grating manufacturing technique of the present invention can be applied to a method for manufacturing a blazed diffraction grating having a blazed cross-sectional shape, particularly by applying a three-dimensional resist pattern forming technique using a modified illumination method. Moreover, the manufacturing technique of the present invention can be used in a method for manufacturing a semiconductor device including an asymmetric shape.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Spectrometry And Color Measurement (AREA)
Abstract
Description
本発明は、入射光を波長ごとに分光する回折格子の製造方法に関する。特に、分光光度計に用いるのに好適な、特定の回折次数の回折光を効率良く取り出せる反射形一次元ブレーズド回折格子の製造方法に関する。
本発明は、回折格子の製造技術に関し、特に、ブレーズド状(鋸歯波状)の断面形状を有するブレーズド回折格子の製造方法に適用して有効な技術に関する。また、非対称形状を含む半導体装置の製造方法に適用して有効な技術に関する。
非特許文献1のpp.435~442に記載されているように、波長分散方式の分光光度計は、光源から発せられる光を分光し、所望の波長の光成分のみを取り出してから試料に照射するか、または光源から発せられる光を試料へ導いた後に所望の波長の光成分のみを取り出し、前記試料の透過率や反射率などを計測する。この波長分散方式の分光光度計では、波長分散素子として、一次元方向に溝が周期的に配列された回折格子が広く用いられている。
sinα=λ/(2d・cosρ) …式1
の関係がある。ここで角度ρは、分光光度計において入射スリット中心-回折格子-出射スリット中心が成す角度の1/2である。
回折格子の製造技術としては、例えば、(1)ルーリングエンジンによる回折格子の形成技術、(2)ホログラフィック露光による回折格子の形成技術が挙げられる。
前記波長分散方式の分光光度計で所望の波長における試料の透過率や反射率を計測する際、その波長の光成分を取り出す効率は、前記回折格子の回折効率に依存する。一方、前記計測の際、所望の波長の光成分に所望の波長以外の光成分が混入することは、前記透過率や反射率の計測誤差を生じるため、避けなければならない。このような光成分は迷光と呼ばれる。
ところで、前述したような回折格子の製造技術に関して、本発明者が検討した結果、以下のようなことが明らかとなった。
上記課題を解決する製造方法は以下のとおりである。
本願において開示される発明のうち、代表的なものの概要を簡単に説明すれば、次のとおりである。
本発明においては、凸部の頂角が概略90度で、高い回折効率と低い迷光量を満足できる回折格子を製造することができる。特に、露光により形成されたパターンに対し、エッチングを行わずとも、凸部の頂角が概略90度の回折格子を製造することができる。
本願において開示される発明のうち、代表的なものによって得られる効果を簡単に説明すれば以下のとおりである。
以下、本発明の実施の形態を図面を参照しつつ説明する。
以下の実施の形態においては、便宜上その必要があるときは、複数の実施の形態またはセクションに分割して説明するが、特に明示した場合を除き、それらは互いに無関係なものではなく、一方は他方の一部または全部の変形例、詳細、補足説明等の関係にある。また、以下の実施の形態において、要素の数等(個数、数値、量、範囲等を含む)に言及する場合、特に明示した場合および原理的に明らかに特定の数に限定される場合等を除き、その特定の数に限定されるものではなく、特定の数以上でも以下でも良い。
本発明の実施の形態である回折格子の製造方法は、ブレーズド状の断面形状を有する回折格子の製造方法に適用され、光源(照明光源10)から放出された光を、光軸に対して非対称な照明形状(アパーチャー20を使用)にして、所定の周期パターンを備えたマスク(マスク40)を透過させ、このマスクを透過させることにより生じる0次光と1次光とを基板(Siウエハ60)の表面で干渉させて、基板の表面の感光材料(フォトレジスト70)を露光し、基板上にブレーズド状の断面形状を有する回折格子を形成することを特徴とする(一例として、()内に図14に対応する構成要素を付記)。
本発明の実施の形態1を、図14~図20を用いて説明する。
図14を用いて、本実施の形態1の回折格子の製造方法を実現する露光装置について説明する。図14は、この露光装置の一例を示す概略図である。図14において、(a)は露光装置の概略、(b)はアパーチャーの形状、(c)はマスクの形状、(d)はSiウエハ上のフォトレジストを露光するDOF周辺の詳細、(e)は+デフォーカスの位置と-デフォーカスの位置での光学像とレジスト形状をそれぞれ示す。
図15および図16を用いて、図14に示した露光装置を用いた回折格子の製造方法について説明する。図15は、露光装置に用いるアパーチャーの一例を示す概略図である。図16は、露光装置に用いるマスクとレジスト形状の一例を示す概略図であり、(a)はマスクの概略、(b)は(a)のマスクに対応するフォトレジストの断面形状、(c)はシミュレーションによる(a)のマスクに対応するフォトレジストの断面形状をそれぞれ示す。図16(b),(c)に示すフォトレジストの断面形状の例は、+デフォーカスの位置で露光した場合である。なお、-デフォーカスの位置で露光した場合には、形状が反転する。
図17を用いて、図15に示したアパーチャーの変形例について説明する。図17は、アパーチャーとレジスト形状の変形例を示す概略図である。図17において、(a)~(e)はアパーチャーの形状と共にシミュレーションによるフォトレジストの断面形状をそれぞれ示す。また、変形例の形状の違いが分かりやすいように、(a)として図15に示した円形の開口部の例も併せて図示している。
図18を用いて、図16に示したマスクの第1の変形例について説明する。図18は、マスクとレジスト形状の第1の変形例を示す概略図である。図18において、(a)はマスクの概略、(b)はシミュレーションによる(a)のマスクに対応するフォトレジストの断面形状をそれぞれ示す。
図19を用いて、図16に示したマスクの第2の変形例について説明する。図19は、マスクとレジスト形状の第2の変形例を示す概略図である。図19において、(a)は補助パターン(Y方向)ありのマスクの概略、(b)は補助パターン(X方向)ありのマスクの概略、(c)はシミュレーションによる補助パターンなしのマスクに対応するフォトレジストの断面形状、(d)はシミュレーションによる(a)の補助パターン(Y方向)ありのマスクに対応するフォトレジストの断面形状、(e)はシミュレーションによる(b)の補助パターン(X方向)ありのマスクに対応するフォトレジストの断面形状をそれぞれ示す。
図20を用いて、図16に示したマスクの第3の変形例について説明する。図20は、マスクとレジスト形状の第3の変形例を示す概略図である。図20において、(a)は解像限界以下で配置したラインアンドスペースのマスクの概略、(b)はシミュレーションによる(a)のラインアンドスペースの長さが100nmのマスクに対応するフォトレジストの断面形状、(c)はシミュレーションによる(a)のラインアンドスペースの長さが150nmのマスクに対応するフォトレジストの断面形状、(d)はシミュレーションによる(a)のラインアンドスペースの長さが200nmのマスクに対応するフォトレジストの断面形状をそれぞれ示す。
以上説明した本実施の形態1によれば、光軸に対して非対称な開口部21(21a~21d)を備えたアパーチャー20(20a~20d)を用い、また、回折格子のブレーズド状のピッチに対応してパターンを配置したマスク40(40a~40d)を用いて、照明光源10から放出された光を、アパーチャー20(20a~20d)を介してマスク40(40a~40d)を透過させ、このマスク40(40a~40d)を透過させることにより生じる0次光と1次光とをSiウエハ60の表面で干渉させて、DOFの+デフォーカス側または-デフォーカス側でSiウエハ60の表面のフォトレジスト70を露光して、Siウエハ60上に、等間隔または不等間隔で、かつ、同じ角度(深さ)または異なる角度(深さ)で、ブレーズド状の断面形状を有するフォトレジスト70が形成された回折格子を製造することで、以下のような効果を得ることができる。
本発明の実施の形態2を、図21を用いて説明する。
図21を用いて、本実施の形態2の図14に示した露光装置を用いた回折格子の製造方法について説明する。図21は、露光装置に用いるアパーチャーとレジスト形状の一例を示す概略図であり、(a)は第1アパーチャーを用いて変形照明法右側のみDOFを適用した場合のシミュレーションによるフォトレジストの断面形状、(b)は第2アパーチャーを用いて変形照明法左側のみDOFを適用した場合のシミュレーションによるフォトレジストの断面形状、(c)は第1アパーチャーと第2アパーチャーとを用いて変形照明法の2重露光DOFを適用した場合のシミュレーションによるフォトレジストの断面形状をそれぞれ示す。
アパーチャーについては、前記実施の形態1と同様の変形が可能であり、図21(a),(b)に示したアパーチャー20及び80以外にも、図17(b)~(e)に示したアパーチャー20a~20dと、この各アパーチャー20a~20dに対して形状がミラー反転したアパーチャーとであれば、同様に回折格子は形成可能である。
マスクについては、前記実施の形態1と同様の変形が可能であり、図16(a)に示した等間隔のマスク40だけでなく、図18(a)に示した不等間隔のマスク40a、図19(a),(b)に示した主パターン以外に補助パターンを配置した角度(深さ)を変更できるマスク40b,40c、図20(a)に示した解像限界以下でラインアンドスペースを配置した角度(深さ)を変更できるマスク40dに対しても、同様に回折格子を形成可能である。
以上説明した本実施の形態2によれば、光軸に対して非対称な開口部を備えたアパーチャー20(20a~20d)と、このアパーチャー20に対して非対称な開口部を反転して備えたアパーチャー80とを用い、また、回折格子のブレーズド状のピッチに対応してパターンを配置したマスク40(40a~40d)を用いて、照明光源から放出された光を、アパーチャー20(20a~20d)およびアパーチャー80を介してマスク40(40a~40d)を透過させ、このマスク40(40a~40d)を透過させることにより生じる0次光と1次光とをSiウエハの表面で干渉させて、DOFの+デフォーカス側および/または-デフォーカス側でフォトレジストを露光し、Siウエハ上に、等間隔または不等間隔で、かつ、同じ角度(深さ)または異なる角度(深さ)で、ブレーズド状の断面形状を有するフォトレジストが形成された回折格子を製造することで、前記実施の形態1と同様の効果を得ることができる。
本発明の実施の形態3を、図22~図23を用いて説明する。
図22および図23を用いて、本実施の形態3の回折格子の製造方法を実現する露光装置について説明する。図22は、この露光装置とこれに用いるアパーチャーの一例を示す概略図であり、(a)は露光装置に用いる照明チルト法の概略、(b)はアパーチャーの形状をそれぞれ示す。図23は、図22に示した露光装置に用いるマスクとレジスト形状の一例を示す概略図であり、(a)はマスクの概略、(b)はシミュレーションによる(a)のマスクに対応するフォトレジストの断面形状をそれぞれ示す。
アパーチャーについては、前記実施の形態1と同様の変形が可能であり、図22(a),(b)に示したアパーチャー90以外にも、図17(b)~(e)に示したアパーチャー20a~20dを変更して、光軸に対して対称な開口部を備えたアパーチャーであれば、同様に傾けて露光することで回折格子は形成可能である。例えば、図17(b)を変更すれば円形の開口部を備えたアパーチャー、図17(c)を変更すれば4つの円形の開口部を備えたアパーチャー、図17(d)を変更すればリング形状の開口部を備えたアパーチャー、図17(e)を変更すれば2つの1/6リング形状の開口部を備えたアパーチャーとなる。
マスクについては、前記実施の形態1と同様の変形が可能であり、図23(a)に示した等間隔のマスク40だけでなく、図18(a)に示した不等間隔のマスク40a、図19(a),(b)に示した主パターン以外に補助パターンを配置した角度(深さ)を変更できるマスク40b,40c、図20(a)に示した解像限界以下でラインアンドスペースを配置した角度(深さ)を変更できるマスク40dに対しても、同様に回折格子を形成可能である。
以上説明した本実施の形態3によれば、光軸に対して対称な開口部を備えたアパーチャー90を光軸に対して傾けて用い、また、回折格子のブレーズド状のピッチに対応してパターンを配置したマスク40(40a~40d)を用いて、照明光源から放出された光を、アパーチャー90を介してマスク40(40a~40d)を透過させ、このマスク40(40a~40d)を透過させることにより生じる0次光と1次光とをSiウエハの表面で干渉させて、DOFの+デフォーカス側または-デフォーカス側でフォトレジストを露光し、Siウエハ上に、等間隔または不等間隔で、かつ、同じ角度(深さ)または異なる角度(深さ)で、ブレーズド状の断面形状を有するフォトレジストが形成された回折格子を製造することで、前記実施の形態1と同様の効果を得ることができる。
本発明の回折格子の製造技術は、特に、変形照明法を用いた3次元レジストパターン形成技術を適用し、ブレーズド状の断面形状を有するブレーズド回折格子の製造方法に利用可能である。また、本発明の製造技術は、非対称形状を含む半導体装置の製造方法に利用可能である。
10,10′ グレーマスク
20 二値マスク
100 回折格子
200 分光光度計
201 光源
202 単色計
203 試料側光束
204 参照側光束
205 試料
206 光検出器
207 CPU
208 表示・記録部
209 波長駆動系
[第2技術(図14~図23)の符号の説明]
10 照明光源
20,20a,20b,20c,20d アパーチャー
21,21a,21b,21c,21d 開口部
22 遮光部
23 開口部
24 開口部
30 集光レンズ
40,40a,40b,40c,40d マスク
41,41a,41b ライン
42 スペース
43a,43b ライン
44 ラインアンドスペース
50 投影レンズ
60 Siウエハ
70 フォトレジスト
80 アパーチャー
90 アパーチャー
Claims (30)
- 回折格子の製造方法であって、周期構造の開口部を有するマスクの開口部形状に対して、露光により形成された基板上のレジストの凸部の断面形状が、非対称の三角形状であって該三角形状の長辺と短辺のなす角が概90度となるように露光条件を設定し、露光を行うことを特徴とする回折格子の製造方法。
- 請求項1の回折格子の製造方法において、
前記マスクの開口部形状,露光のフォーカス,露光量,露光レンズの開口数,照明のσ値のうち、少なくとも1つを変更し、露光により形成された基板上のレジストの凸部の断面形状を比較することを特徴とする回折格子の製造方法。 - 請求項1の回折格子の製造方法において、
前記マスクは、回折格子の溝の方向に対して垂直方向又は並行方向に周期構造を有することを特徴とする回折格子の製造方法。 - 請求項1の回折格子の製造方法において、
前記マスクは露光時の解像度より細かく、前記基板上で露光量が場所ごとに擬似的に連続変化するように構成された開口を備えたマスクであることを特徴とする回折格子の製造方法。 - 請求項1の回折格子の製造方法において、
前記マスク上の場所ごとの透過率分布を、製造する回折格子の溝の断面形状に補正項を加えたものと概略相似形となるように構成したことを特徴とする回折格子の製造方法。 - 請求項1の回折格子の製造方法において、
前記基板上に反射防止膜を有することを特徴とする回折格子の製造方法。 - 請求項1の回折格子の製造方法において、
基板上に形成されたレジストの上層に誘電体膜を形成することを特徴とする回折格子の製造方法。 - 請求項1の回折格子の製造方法において、
基板上に形成されたレジストの上層に金属膜を形成することを特徴とする回折格子の製造方法。 - 回折格子の製造方法であって、周期構造の開口部を有するマスクの開口部形状に対して、当該マスクを基板に対して所定方向に所定距離移動する毎に露光を行い、当該露光により形成された基板上のレジストの凸部の断面形状が、非対称の三角形状であって該三角形状の長辺と短辺のなす角が概90度となるように露光条件を設定し、露光を行うことを特徴とする回折格子の製造方法。
- 請求項9の回折格子の製造方法において、
前記マスクは、回折格子の溝の方向に対して平行方向に開口を有し、回折格子の溝の方向に対して垂直方向にマスクを移動することを特徴とする回折格子の製造方法。 - 請求項9の回折格子の製造方法において、
前記マスクの移動距離,露光のフォーカス,露光量,露光レンズの開口数,照明のσ値のうち、少なくとも1つを変更し、露光により形成された基板上のレジストの凸部の断面形状を比較することを特徴とする回折格子の製造方法。 - 回折格子を搭載した分光光度計であって、
当該回折格子は、周期構造の開口部を有するマスクの開口部形状に対して、当該マスクを基板に対して所定方向に移動しながら露光を行い、当該露光により形成された基板上のレジストの凸部の断面形状が、非対称の三角形状であって該三角形状の長辺と短辺のなす角が概90度となるように露光条件を設定し、露光を行うことによって製造された回折格子であることを特徴とする分光光度計。 - ブレーズド状の断面形状を有する回折格子の製造方法において、
光源から放出された光を、光軸に対して非対称な照明形状にして、所定の周期パターンを備えたマスクを透過させ、
前記マスクを透過させることにより生じる0次光と1次光とを基板の表面で干渉させて、前記基板の表面の感光材料を露光し、
前記基板上に前記ブレーズド状の断面形状を有する回折格子を形成することを特徴とする回折格子の製造方法。 - 請求項13記載の回折格子の製造方法において、
前記光軸に対して非対称な照明形状を形成する際には、前記光軸に対して非対称な開口部を備えたアパーチャーを用い、
前記マスクには、前記回折格子のブレーズド状のピッチに対応してパターンを配置したマスクを用い、
前記基板の表面の感光材料を露光する際は、
前記光源から放出された光を、前記アパーチャーを介して前記マスクを透過させ、
前記マスクを透過させることにより生じる0次光と1次光とを基板の表面で干渉させて、一定の結像性能を維持できる焦点範囲のデフォーカス側で前記感光材料を露光し、
前記基板上に前記ブレーズド状の断面形状を有する回折格子を形成することを特徴とする回折格子の製造方法。 - 請求項14記載の回折格子の製造方法において、
前記マスクには、前記回折格子のブレーズド状のピッチに対応して主パターンを配置し、かつ、前記主パターンの相互間に補助パターンを配置したマスクを用い、
前記基板の表面の感光材料を露光する際は、
前記光源から放出された光を、前記アパーチャーを介して前記マスクを透過させ、
前記マスクを透過させることにより生じる0次光と1次光とを基板の表面で干渉させて、一定の結像性能を維持できる焦点範囲のデフォーカス側で前記感光材料を露光し、
前記補助パターンのサイズを調整して前記回折格子のブレーズド状の角度を変更することを特徴とする回折格子の製造方法。 - 請求項14記載の回折格子の製造方法において、
前記マスクには、前記回折格子のブレーズド状のピッチに対応して解像限界以下の配置によるラインアンドスペースのパターンを配置したマスクを用い、
前記基板の表面の感光材料を露光する際は、
前記光源から放出された光を、前記アパーチャーを介して前記マスクを透過させ、
前記マスクを透過させることにより生じる0次光と1次光とを基板の表面で干渉させて、一定の結像性能を維持できる焦点範囲のデフォーカス側で前記感光材料を露光し、
前記ラインアンドスペースのパターンの長さを変えて前記回折格子のブレーズド状の角度を変更することを特徴とする回折格子の製造方法。 - 請求項14記載の回折格子の製造方法において、
前記回折格子のブレーズド状のピッチは、一つの回折格子の中で等間隔または不等間隔であることを特徴とする回折格子の製造方法。 - 請求項14記載の回折格子の製造方法において、
前記回折格子のブレーズド状の角度は、一つの回折格子の中で同じまたは異なることを特徴とする回折格子の製造方法。 - 請求項13記載の回折格子の製造方法において、
前記光軸に対して非対称な照明形状を形成する際には、前記光軸に対して非対称な開口部を備えた第1アパーチャーと、前記第1アパーチャーに対して非対称な開口部を反転して備えた第2アパーチャーとを用い、
前記マスクには、前記回折格子のブレーズド状のピッチに対応してパターンを配置したマスクを用い、
前記基板の表面の感光材料を露光する際は、
前記光源から放出された光を、前記第1アパーチャーおよび前記第2アパーチャーを介して前記マスクを透過させ、
前記マスクを透過させることにより生じる0次光と1次光とを基板の表面で干渉させて、一定の結像性能を維持できる焦点範囲のデフォーカス側で前記感光材料を露光し、
前記基板上に前記ブレーズド状の断面形状を有する回折格子を形成することを特徴とする回折格子の製造方法。 - 請求項19記載の回折格子の製造方法において、
前記マスクには、前記回折格子のブレーズド状のピッチに対応して主パターンを配置し、かつ、前記主パターンの相互間に補助パターンを配置したマスクを用い、
前記基板の表面の感光材料を露光する際は、
前記光源から放出された光を、前記第1アパーチャーおよび前記第2アパーチャーを介して前記マスクを透過させ、
前記マスクを透過させることにより生じる0次光と1次光とを基板の表面で干渉させて、一定の結像性能を維持できる焦点範囲のデフォーカス側で前記感光材料を露光し、
前記補助パターンのサイズを調整して前記回折格子のブレーズド状の角度を変更することを特徴とする回折格子の製造方法。 - 請求項19記載の回折格子の製造方法において、
前記マスクには、前記回折格子のブレーズド状のピッチに対応して解像限界以下の配置によるラインアンドスペースのパターンを配置したマスクを用い、
前記基板の表面の感光材料を露光する際は、
前記光源から放出された光を、前記第1アパーチャーおよび前記第2アパーチャーを介して前記マスクを透過させ、
前記マスクを透過させることにより生じる0次光と1次光とを基板の表面で干渉させて、一定の結像性能を維持できる焦点範囲のデフォーカス側で前記感光材料を露光し、
前記ラインアンドスペースのパターンの長さを変えて前記回折格子のブレーズド状の角度を変更することを特徴とする回折格子の製造方法。 - 請求項19記載の回折格子の製造方法において、
前記回折格子のブレーズド状のピッチは、一つの回折格子の中で等間隔または不等間隔であることを特徴とする回折格子の製造方法。 - 請求項19記載の回折格子の製造方法において、
前記回折格子のブレーズド状の角度は、一つの回折格子の中で同じまたは異なることを特徴とする回折格子の製造方法。 - 請求項13記載の回折格子の製造方法において、
前記光軸に対して非対称な照明形状を形成する際には、前記光軸に対して対称な開口部を備えたアパーチャーを前記光軸に対して傾けて用い、
前記マスクには、前記回折格子のブレーズド状のピッチに対応してパターンを配置したマスクを用い、
前記基板の表面の感光材料を露光する際は、
前記光源から放出された光を、前記アパーチャーを介して前記マスクを透過させ、
前記マスクを透過させることにより生じる0次光と1次光とを基板の表面で干渉させて、一定の結像性能を維持できる焦点範囲のデフォーカス側で前記感光材料を露光し、
前記基板上に前記ブレーズド状の断面形状を有する回折格子を形成することを特徴とする回折格子の製造方法。 - 請求項24記載の回折格子の製造方法において、
前記マスクには、前記回折格子のブレーズド状のピッチに対応して主パターンを配置し、かつ、前記主パターンの相互間に補助パターンを配置したマスクを用い、
前記基板の表面の感光材料を露光する際は、
前記光源から放出された光を、前記アパーチャーを介して前記マスクを透過させ、
前記マスクを透過させることにより生じる0次光と1次光とを基板の表面で干渉させて、一定の結像性能を維持できる焦点範囲のデフォーカス側で前記感光材料を露光し、
前記補助パターンのサイズを調整して前記回折格子のブレーズド状の角度を変更することを特徴とする回折格子の製造方法。 - 請求項24記載の回折格子の製造方法において、
前記マスクには、前記回折格子のブレーズド状のピッチに対応して解像限界以下の配置によるラインアンドスペースのパターンを配置したマスクを用い、
前記基板の表面の感光材料を露光する際は、
前記光源から放出された光を、前記アパーチャーを介して前記マスクを透過させ、
前記マスクを透過させることにより生じる0次光と1次光とを基板の表面で干渉させて、一定の結像性能を維持できる焦点範囲のデフォーカス側で前記感光材料を露光し、
前記ラインアンドスペースのパターンの長さを変えて前記回折格子のブレーズド状の角度を変更することを特徴とする回折格子の製造方法。 - 請求項24記載の回折格子の製造方法において、
前記回折格子のブレーズド状のピッチは、一つの回折格子の中で等間隔または不等間隔であることを特徴とする回折格子の製造方法。 - 請求項24記載の回折格子の製造方法において、
前記回折格子のブレーズド状の角度は、一つの回折格子の中で同じまたは異なることを特徴とする回折格子の製造方法。 - 非対称の断面形状を有する半導体装置の製造方法において、
光源から放出された光を、光軸に対して非対称な照明形状にして、所定の周期パターンを備えたマスクを透過させ、
前記マスクを透過させることにより生じる0次光と1次光とを半導体基板の表面で干渉させて、前記半導体基板の表面の感光材料を露光し、
前記半導体基板上に前記非対称の断面形状を形成することを特徴とする半導体装置の製造方法。 - 請求項29記載の半導体装置の製造方法において、
前記感光材料の断面形状を前記半導体基板に転写し、前記半導体基板に非対称の断面形状を形成することを特徴とする半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP12785149.1A EP2711746A4 (en) | 2011-05-19 | 2012-05-17 | METHOD FOR MANUFACTURING DIFFRACTION NETWORK, SPECTROPHOTOMETER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
US14/118,375 US20140092384A1 (en) | 2011-05-19 | 2012-05-17 | Diffraction grating manufacturing method, spectrophotometer, and semiconductor device manufacturing method |
CN201280024203.3A CN103688198A (zh) | 2011-05-19 | 2012-05-17 | 衍射光栅制造方法、分光光度仪、以及半导体装置的制造方法 |
JP2013515188A JPWO2012157697A1 (ja) | 2011-05-19 | 2012-05-17 | 回折格子製造方法、分光光度計、および半導体装置の製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-111987 | 2011-05-19 | ||
JP2011111987 | 2011-05-19 | ||
JP2011126877 | 2011-06-07 | ||
JP2011-126877 | 2011-06-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012157697A1 true WO2012157697A1 (ja) | 2012-11-22 |
Family
ID=47177014
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/062622 WO2012157697A1 (ja) | 2011-05-19 | 2012-05-17 | 回折格子製造方法、分光光度計、および半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140092384A1 (ja) |
EP (1) | EP2711746A4 (ja) |
JP (1) | JPWO2012157697A1 (ja) |
CN (1) | CN103688198A (ja) |
WO (1) | WO2012157697A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019529985A (ja) * | 2016-09-09 | 2019-10-17 | フサオ イシイ | 回折格子の製造方法 |
JP2020030397A (ja) * | 2018-08-20 | 2020-02-27 | 東京エレクトロン株式会社 | レジストパターンをシミュレーションする方法、レジスト材料及びその組成の最適化方法、並びに装置及び記録媒体 |
JPWO2021038919A1 (ja) * | 2019-08-29 | 2021-03-04 | ||
JP2022530215A (ja) * | 2019-09-30 | 2022-06-28 | エルジー・ケム・リミテッド | ホログラフィック光学素子およびその製造方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10393584B2 (en) * | 2008-03-11 | 2019-08-27 | Oto Photonics Inc. | Spectrometer, monochromator, diffraction grating and methods of manufacturing grating and mold |
CN106482832B (zh) * | 2015-08-24 | 2021-05-25 | 台湾超微光学股份有限公司 | 光谱仪、单光仪、绕射光栅及其制造方法与母模制造方法 |
CN105242398A (zh) * | 2015-10-08 | 2016-01-13 | 鲁东大学 | 一种六方型泰伯阵列照明器及制备方法 |
DE102016203749B4 (de) * | 2016-03-08 | 2020-02-20 | Carl Zeiss Smt Gmbh | Optisches System, insbesondere für die Mikroskopie |
US10209627B2 (en) * | 2017-01-06 | 2019-02-19 | Kla-Tencor Corporation | Systems and methods for focus-sensitive metrology targets |
US10589980B2 (en) * | 2017-04-07 | 2020-03-17 | Texas Instruments Incorporated | Isolated protrusion/recession features in a micro electro mechanical system |
US10712481B1 (en) * | 2017-08-04 | 2020-07-14 | Facebook Technologies, Llc | Fabricating of diffraction grating by ion beam etching |
CN114326313B (zh) * | 2020-09-29 | 2024-01-23 | 长鑫存储技术有限公司 | 同时监测多种照明条件的方法 |
CN112505811A (zh) * | 2020-10-10 | 2021-03-16 | 上海宏盾防伪材料有限公司 | 一种非对称光栅结构图案的制作方法 |
CN113031141A (zh) * | 2021-04-02 | 2021-06-25 | 中国科学院光电技术研究所 | 一种基于重力场加工闪耀光栅的方法 |
US20230408335A1 (en) * | 2022-05-25 | 2023-12-21 | Visera Technologies Company Ltd. | Spectrometer |
CN116500711B (zh) * | 2023-04-14 | 2024-04-26 | 同济大学 | 一种具备自溯源角度的二维光栅标准物质及其制备方法 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06186412A (ja) * | 1992-12-18 | 1994-07-08 | Olympus Optical Co Ltd | 微細パターンの作成方法 |
JPH0798404A (ja) * | 1993-08-02 | 1995-04-11 | Matsushita Electric Ind Co Ltd | 回折格子の製造方法 |
JPH1073724A (ja) * | 1996-07-04 | 1998-03-17 | Sanyo Electric Co Ltd | カラー液晶表示装置およびカラーフィルター |
JPH10113780A (ja) * | 1996-10-14 | 1998-05-06 | Nikon Corp | レーザ加工装置、レーザ加工方法、および、回折格子 |
JPH11305023A (ja) | 1998-04-24 | 1999-11-05 | Shimadzu Corp | シリコン回折格子の製造方法 |
JP2002189112A (ja) | 2000-12-22 | 2002-07-05 | Canon Inc | 回折光学素子の製造方法、回折光学素子の製造方法によって製造したことを特徴とする回折光学素子製造用金型、回折光学素子、および該回折光学素子を有する光学系、光学機器、露光装置、デバイス製造方法、デバイス |
JP2004086073A (ja) * | 2002-08-29 | 2004-03-18 | Hitachi Maxell Ltd | 回折格子及びその製造方法 |
JP2005011478A (ja) | 2003-04-24 | 2005-01-13 | Ricoh Co Ltd | 回折格子とその作製方法及び複製方法並びにその回折格子を用いた光ヘッド装置及び光ディスクドライブ装置 |
JP2005121938A (ja) * | 2003-10-17 | 2005-05-12 | Nippon Sheet Glass Co Ltd | 偏光制御膜付き回折格子およびそれを用いた回折光学装置 |
JP2005157118A (ja) * | 2003-11-27 | 2005-06-16 | Shimadzu Corp | ブレーズド・ホログラフィック・グレーティング、その製造方法、及びレプリカグレーティング |
JP2006259325A (ja) | 2005-03-17 | 2006-09-28 | Shimadzu Corp | ホログラフィックグレーティング製造方法 |
JP2007147926A (ja) * | 2005-11-25 | 2007-06-14 | Lasertec Corp | 光源装置及びそれを用いた検査装置、検査方法及びパターン基板の製造方法 |
JP2007155927A (ja) | 2005-12-01 | 2007-06-21 | Dainippon Printing Co Ltd | 回折光学素子作製方法と回折光学素子、および該作製方法に用いられるレチクルマスク |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU485607A3 (ru) * | 1968-01-20 | 1975-09-25 | Др.Иоханнес Хайденхайн И Др.Г.Шмаль,Д.Рудольф (Фирма) | Способ изготовлени оптической дифракционной решетки |
US3615449A (en) * | 1969-09-25 | 1971-10-26 | Rca Corp | Method of generating high area-density periodic arrays by diffraction imaging |
JPS59172723A (ja) * | 1983-03-22 | 1984-09-29 | Nec Corp | パタ−ン形成方法 |
JPS60103310A (ja) * | 1983-11-11 | 1985-06-07 | Pioneer Electronic Corp | マイクロフレネルレンズの製造方法 |
US5340637A (en) * | 1986-09-16 | 1994-08-23 | Hitachi, Ltd. | Optical device diffraction gratings and a photomask for use in the same |
DE3879471T2 (de) * | 1988-04-21 | 1993-09-16 | Ibm | Verfahren zur herstellung eines photoresistmusters und apparat dafuer. |
JPH02151862A (ja) * | 1988-12-05 | 1990-06-11 | Omron Tateisi Electron Co | フォトリソグラフィ用マスクおよびその作製方法 |
JPH05224398A (ja) * | 1992-02-12 | 1993-09-03 | Kuraray Co Ltd | 透過率変調型フォトマスク、およびそれを用いる光学部品の製造方法 |
JPH05343806A (ja) * | 1992-06-05 | 1993-12-24 | Sumitomo Electric Ind Ltd | 位相シフト型回折格子の製造方法 |
JP3551979B2 (ja) * | 1994-01-11 | 2004-08-11 | リコー光学株式会社 | マイクロコーナーキューブ・マイクロコーナーキューブアレイの製造方法およびマイクロコーナーキューブアレイを用いる表示装置 |
US20020019305A1 (en) * | 1996-10-31 | 2002-02-14 | Che-Kuang Wu | Gray scale all-glass photomasks |
WO1998032036A1 (en) * | 1997-01-17 | 1998-07-23 | Cymer, Inc. | Reflective overcoat for replicated diffraction gratings |
US5998066A (en) * | 1997-05-16 | 1999-12-07 | Aerial Imaging Corporation | Gray scale mask and depth pattern transfer technique using inorganic chalcogenide glass |
US5982545A (en) * | 1997-10-17 | 1999-11-09 | Industrial Technology Research Institute | Structure and method for manufacturing surface relief diffractive optical elements |
DE19810055A1 (de) * | 1998-03-09 | 1999-09-23 | Suess Kg Karl | Verfahren zur Nahfeldbelichtung mit im wesentlichen parallelem Licht |
JP2000181086A (ja) * | 1998-12-11 | 2000-06-30 | Asahi Optical Co Ltd | パターン形成方法、光学素子の製造方法 |
GB2349237A (en) * | 1999-04-24 | 2000-10-25 | Sharp Kk | An optical element, method of manufacture thereof and a display device incorporating said element. |
JP2002258490A (ja) * | 2001-02-27 | 2002-09-11 | Optonix Seimitsu:Kk | 微細精密部品あるいは光学部品のx線あるいは紫外線を用いた製造方法およびその製品 |
AU2003267004A1 (en) * | 2002-08-24 | 2004-04-30 | Carl Zeiss Smt Ag | Binary blazed diffractive optical element |
EP1810085B1 (en) * | 2004-10-22 | 2011-03-16 | Eulitha AG | A system and a method for generating periodic and/or quasi-periodic pattern on a sample |
KR100787941B1 (ko) * | 2006-07-13 | 2007-12-24 | 삼성전자주식회사 | 중첩 마크를 갖는 포토 마스크 및 반도체 장치의 제조 방법 |
-
2012
- 2012-05-17 EP EP12785149.1A patent/EP2711746A4/en not_active Withdrawn
- 2012-05-17 US US14/118,375 patent/US20140092384A1/en not_active Abandoned
- 2012-05-17 JP JP2013515188A patent/JPWO2012157697A1/ja active Pending
- 2012-05-17 CN CN201280024203.3A patent/CN103688198A/zh active Pending
- 2012-05-17 WO PCT/JP2012/062622 patent/WO2012157697A1/ja active Application Filing
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06186412A (ja) * | 1992-12-18 | 1994-07-08 | Olympus Optical Co Ltd | 微細パターンの作成方法 |
JPH0798404A (ja) * | 1993-08-02 | 1995-04-11 | Matsushita Electric Ind Co Ltd | 回折格子の製造方法 |
JPH1073724A (ja) * | 1996-07-04 | 1998-03-17 | Sanyo Electric Co Ltd | カラー液晶表示装置およびカラーフィルター |
JPH10113780A (ja) * | 1996-10-14 | 1998-05-06 | Nikon Corp | レーザ加工装置、レーザ加工方法、および、回折格子 |
JPH11305023A (ja) | 1998-04-24 | 1999-11-05 | Shimadzu Corp | シリコン回折格子の製造方法 |
JP2002189112A (ja) | 2000-12-22 | 2002-07-05 | Canon Inc | 回折光学素子の製造方法、回折光学素子の製造方法によって製造したことを特徴とする回折光学素子製造用金型、回折光学素子、および該回折光学素子を有する光学系、光学機器、露光装置、デバイス製造方法、デバイス |
JP2004086073A (ja) * | 2002-08-29 | 2004-03-18 | Hitachi Maxell Ltd | 回折格子及びその製造方法 |
JP2005011478A (ja) | 2003-04-24 | 2005-01-13 | Ricoh Co Ltd | 回折格子とその作製方法及び複製方法並びにその回折格子を用いた光ヘッド装置及び光ディスクドライブ装置 |
JP2005121938A (ja) * | 2003-10-17 | 2005-05-12 | Nippon Sheet Glass Co Ltd | 偏光制御膜付き回折格子およびそれを用いた回折光学装置 |
JP2005157118A (ja) * | 2003-11-27 | 2005-06-16 | Shimadzu Corp | ブレーズド・ホログラフィック・グレーティング、その製造方法、及びレプリカグレーティング |
JP2006259325A (ja) | 2005-03-17 | 2006-09-28 | Shimadzu Corp | ホログラフィックグレーティング製造方法 |
JP2007147926A (ja) * | 2005-11-25 | 2007-06-14 | Lasertec Corp | 光源装置及びそれを用いた検査装置、検査方法及びパターン基板の製造方法 |
JP2007155927A (ja) | 2005-12-01 | 2007-06-21 | Dainippon Printing Co Ltd | 回折光学素子作製方法と回折光学素子、および該作製方法に用いられるレチクルマスク |
Non-Patent Citations (1)
Title |
---|
KEIEI KUDO: "BASE AND METHOD of SPECTRUM", July 1985, OHMSHA LTD |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019529985A (ja) * | 2016-09-09 | 2019-10-17 | フサオ イシイ | 回折格子の製造方法 |
JP2020030397A (ja) * | 2018-08-20 | 2020-02-27 | 東京エレクトロン株式会社 | レジストパターンをシミュレーションする方法、レジスト材料及びその組成の最適化方法、並びに装置及び記録媒体 |
JP7360799B2 (ja) | 2018-08-20 | 2023-10-13 | 東京エレクトロン株式会社 | レジストパターンをシミュレーションする方法、レジスト材料の組成の最適化方法、及び放射線の照射条件又は目標パターンの最適化方法 |
JPWO2021038919A1 (ja) * | 2019-08-29 | 2021-03-04 | ||
WO2021038919A1 (ja) * | 2019-08-29 | 2021-03-04 | 株式会社日立ハイテク | 回折格子、回折格子の製造方法およびフォトマスク |
JP7499260B2 (ja) | 2019-08-29 | 2024-06-13 | 株式会社日立ハイテク | 回折格子、回折格子の製造方法およびフォトマスク |
JP2022530215A (ja) * | 2019-09-30 | 2022-06-28 | エルジー・ケム・リミテッド | ホログラフィック光学素子およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2711746A1 (en) | 2014-03-26 |
EP2711746A4 (en) | 2015-04-01 |
JPWO2012157697A1 (ja) | 2014-07-31 |
US20140092384A1 (en) | 2014-04-03 |
CN103688198A (zh) | 2014-03-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2012157697A1 (ja) | 回折格子製造方法、分光光度計、および半導体装置の製造方法 | |
US20190137886A1 (en) | Exposure method and apparatus, and method for fabricating device with light amount distribution having light larger in four areas | |
TWI714617B (zh) | 製程敏感計量之系統及方法 | |
US8221963B2 (en) | Method for producing fine structure | |
JP4750525B2 (ja) | 露光方法及びデバイス製造方法 | |
KR101270408B1 (ko) | 노광 방법 및 장치, 및 전자 장치 제조 방법 | |
US5636004A (en) | Projection exposure method and apparatus | |
JP2009175587A (ja) | 露光装置検査用マスク、その製造方法、及び露光装置検査用マスクを用いた露光装置の検査方法 | |
CN113841072A (zh) | 用于印刷具有变化的占宽比的周期性图案的方法和装置 | |
JP5841797B2 (ja) | 回折格子の製造方法 | |
US20220252768A1 (en) | Diffraction grating, method for manufacturing diffraction grating, and photomask | |
JP6370755B2 (ja) | マスク及びパターン形成方法 | |
JP3082747B2 (ja) | 露光装置の評価方法 | |
JP5012266B2 (ja) | 干渉縞パターン形成方法、及び干渉縞パターン形成装置 | |
JP2011077422A (ja) | 露光システムおよび電子デバイスの製造方法 | |
KR20090033066A (ko) | 노광장치 및 디바이스 제조방법 | |
JP2007142130A (ja) | 露光装置及び露光方法 | |
US9500961B2 (en) | Pattern formation method and exposure apparatus | |
JP2006138946A (ja) | 回折型可変アッテネータ | |
WO2004011967A1 (ja) | 回折光学素子、照明光学装置、露光装置および露光方法 | |
JP2003021709A (ja) | バイナリオプティクス素子 | |
JP2004172600A (ja) | 露光マスク、フォーカス測定方法、露光装置管理方法及び電子デバイスの製造方法 | |
JP2008089924A (ja) | 光モジュール及びその製造方法 | |
KR20020014299A (ko) | 조명계 변위를 보정하기 위한 블레이즈 격자를 갖춘 레티클 | |
JP2005258306A (ja) | マスク |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12785149 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2013515188 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012785149 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14118375 Country of ref document: US |