WO2012077599A1 - Composite céramique de photoconversion et son procédé de fabrication - Google Patents

Composite céramique de photoconversion et son procédé de fabrication Download PDF

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WO2012077599A1
WO2012077599A1 PCT/JP2011/077918 JP2011077918W WO2012077599A1 WO 2012077599 A1 WO2012077599 A1 WO 2012077599A1 JP 2011077918 W JP2011077918 W JP 2011077918W WO 2012077599 A1 WO2012077599 A1 WO 2012077599A1
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phase
ceramic composite
light conversion
cmp
light
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PCT/JP2011/077918
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English (en)
Japanese (ja)
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太 稲森
河野　孝史
土肥　俊郎
周平 黒河
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宇部興産株式会社
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Priority to JP2012547826A priority Critical patent/JP5370595B2/ja
Priority to EP11846090.6A priority patent/EP2650082B1/fr
Priority to US13/992,805 priority patent/US9543480B2/en
Priority to CN201180058469.5A priority patent/CN103260825B/zh
Priority to KR1020137017758A priority patent/KR20130103784A/ko
Publication of WO2012077599A1 publication Critical patent/WO2012077599A1/fr

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    • B24—GRINDING; POLISHING
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Definitions

  • the present invention relates to a ceramic composite for light conversion used for a light emitting diode used for a display, illumination, backlight light source, and the like, and a method for producing the same.
  • white light emitting devices using a blue light emitting element as a light source have been actively conducted.
  • white light-emitting devices using blue light-emitting elements have a long life span and not only consume less power than incandescent and fluorescent lamps, but also do not use harmful substances such as mercury.
  • the used lighting equipment is being put into practical use.
  • the most common method for obtaining white light using blue light from a blue light emitting element as a light source is to obtain a pseudo white color by mixing yellow having a complementary color relationship with blue.
  • a blue light emitting element is sealed with a transparent resin containing a phosphor that emits yellow light (for example, a YAG (Y 3 Al 5 O 12 ) phosphor).
  • Blue light (wavelength 450 to 460 nm) is emitted from the blue light emitting element, and the YAG phosphor is excited by a part of the blue light, and yellow light is emitted from the phosphor.
  • a white light emitting device which is configured by using a ceramic composite for light conversion composed of a solidified body formed continuously and three-dimensionally intertwined with each other and a blue light emitting element.
  • the ceramic composite for light conversion can stably obtain homogeneous yellow fluorescence because the phosphor phase is uniformly distributed, and it is excellent in durability because it is a ceramic, and occurs when encapsulated with an epoxy resin or the like. It is possible to solve the problem and provide a highly reliable white light emitting device.
  • the configuration of the white light emitting device using the ceramic composite for light conversion is, for example, a circuit board on which a blue light emitting element that is flip-chip mounted and a wiring pattern that receives and supplies power to the blue light emitting element are formed. And a ceramic composite for light conversion directly bonded to the blue light emitting element.
  • a single crystal layer capable of forming a light emitting diode element, and at least two oxide crystal phases selected from a single metal oxide and a composite metal oxide There has been proposed a substrate for a light emitting diode in which a ceramic composite layer for light conversion composed of a solidified body which is continuously and three-dimensionally entangled with each other is laminated.
  • a ceramic composite layer for light conversion composed of a solidified body which is continuously and three-dimensionally entangled with each other is laminated.
  • a method of directly joining at a high temperature and a method of interposing a very small amount of a low melting point material as a joining layer are shown.
  • the bonding surface between the single crystal layer and the ceramic composite layer for light conversion is flat, not only the above method but also the surface activated bonding method can be used to directly bond the ceramic composite layer for light conversion and the single crystal layer. Therefore, it is important that the joint surface is flat.
  • a polycrystalline body composed of a plurality of oxide crystal phases is composed of a large number of crystal grains having different crystal plane orientations, and the processing speed differs depending on the plane orientation in polishing processing. There is a problem that there is a limit.
  • the present invention provides a ceramic composite for light conversion having a flat surface even if it is a solidified body in which a plurality of oxide crystal phases are continuously and three-dimensionally entangled with each other, and its production It aims to provide a method.
  • the present inventors have conducted extensive studies, and as a result, the surface of a solidified body having a structure in which an Al 2 O 3 phase and an oxide crystal phase are continuously and three-dimensionally entangled with each other.
  • the surface of the solidified body comprising the Al 2 O 3 phase and the oxide crystal phase other than Al 2 O 3 is flattened by adjusting the pH of the polishing liquid to 11 to 12 and performing CMP (Chemical Mechanical Polishing). Specifically, it was found that the step can be formed to 0.010 ⁇ m or less.
  • the present invention includes a polishing step of performing CMP on the surface of a solidified body having a structure in which an Al 2 O 3 phase and an oxide crystal phase other than Al 2 O 3 are continuously and three-dimensionally entangled with each other.
  • the present invention also comprises a solidified body having a structure in which oxide crystal phases other than Al 2 O 3 phase and Al 2 O 3 are continuously and three-dimensionally entangled with each other, and Al on the surface of the solidified body A ceramic composite for light conversion in which a step between the 2 O 3 phase and the oxide crystal phase is 0.010 ⁇ m or less.
  • the surface thereof has a flat surface.
  • a composite and a method for producing the same can be provided.
  • FIG. 1 is a perspective view showing a surface shape of a ceramic composite for light conversion according to Example 1.
  • FIG. 6 is a perspective view showing a surface shape of a ceramic composite for light conversion according to Example 2.
  • FIG. 6 is a perspective view showing a surface shape of a ceramic composite for light conversion according to Example 3.
  • FIG. 10 is a graph showing a pH state during CMP processing of the ceramic composite for light conversion according to Example 5.
  • FIG. 6 is a perspective view showing a surface shape of a ceramic composite for light conversion according to Comparative Example 1.
  • FIG. 6 is a perspective view showing a surface shape of a ceramic composite for light conversion according to Comparative Example 2.
  • FIG. 10 is a perspective view showing a surface shape of a ceramic composite for light conversion according to Comparative Example 3.
  • a ceramic composite for light conversion and a method for producing the same according to the present invention will be described.
  • the polishing rate of the oxide crystal phase can be controlled, whereby the step difference between the surfaces of the Al 2 O 3 phase and the oxide crystal phase other than Al 2 O 3 can be made 0.010 ⁇ m or less.
  • the step difference between the surfaces of the Al 2 O 3 phase and the oxide crystal phase other than Al 2 O 3 can be made 0.010 ⁇ m or less.
  • the Al 2 O 3 phase on the surface of the solidified body constituting the ceramic composite for light conversion and the oxide crystal phase other than Al 2 O 3 The inter-phase step is parallel to the surface to be processed, two points of an arbitrary point on the surface of one crystal phase constituting the convex shape and an arbitrary point on the surface of the other crystal phase constituting the concave shape. Using an arbitrary plane as a reference plane, the height of the two points is obtained, and the absolute value of the difference between the two heights is obtained.
  • an arbitrary point on the surface of the crystal phase constituting such a convex shape and an arbitrary point on the surface of the crystal phase constituting the concave shape constitute a concave shape with the crystal phase constituting the convex shape.
  • the points close to each other across the interface of the crystal phase to be used are preferable.
  • twelve measurement points including two points are set, and the step difference between the phases is an average value of the measurement results. . Therefore, the step difference between the Al 2 O 3 phase and the oxide crystal phase other than Al 2 O 3 is 0.010 ⁇ m or less means that the measurement result of the step difference between the individual 12 points in the above method is used. It means that the average value is 0.010 ⁇ m or less.
  • the polishing liquid used is adjusted to a slurry and preferably contains silica particles, and the content thereof is 0.1 to 5% by mass. Is preferably less than 0.4, more preferably 0.4 to 4% by mass.
  • the polishing rate may be lowered.
  • the polishing rate is improved, but the Al 2 O 3 phase.
  • the step difference between the oxide crystal phases other than Al 2 O 3 increases.
  • the polishing liquid used is obtained, for example, by adjusting the pH by adding an alkaline solution such as sodium hydroxide to a commercially available CMP polishing liquid.
  • an alkaline solution such as sodium hydroxide
  • CMP polishing liquid for example, "COMPOL (registered trademark) Type 20", "COMPOL (registered trademark) Type 50", “COMPOL (registered trademark) Type 80" of colloidal silica polishing slurry manufactured by Fujimi Incorporated, “COMPOL (registered trademark) Type 120”, “Quortron (registered trademark) PL series” of colloidal silica polishing slurry manufactured by Fuso Chemical Industry Co., Ltd., and the like can be used.
  • These slurries are diluted with pure water as necessary to adjust the content of silica particles, and the pH is adjusted by adding an alkaline solution to obtain a polishing liquid used in the present invention. be able to.
  • the pH of the polishing liquid may be lowered during CMP, so that it may fall within the range of 11 to 12 by adding an alkaline solution as needed. adjust.
  • the pH of the polishing liquid during CMP is adjusted to 11 to 12, and more preferably to 11.3 to 11.6.
  • the pH of this polishing liquid is set based on the stability of the polishing liquid, in addition to the above-described step difference between the Al 2 O 3 phase in which CMP is performed and the oxide crystal phase other than Al 2 O 3 .
  • the pH of the polishing liquid exceeds 12, problems such as agglomeration of silica particles in the polishing liquid occur, and it is difficult to stably supply the polishing liquid.
  • the pH of the polishing liquid is less than 11, it becomes difficult to eliminate the inter-step difference between the Al 2 O 3 phase and the oxide crystal phase other than Al 2 O 3 .
  • CMP can be performed using any polishing apparatus.
  • CMP is performed by attaching a solidified body, which is a complex oxide, to a rotary polishing head, and a solidified body attached to a polishing head rotating at about 50 rpm (rotation / minute) is applied to a polishing pad rotating at about 50 rpm.
  • CMP can be performed by pressing.
  • the unit load of CMP is preferably 5 to 50 kPa, and more preferably 10 to 33 kPa. If the unit load of CMP is less than 5 kPa, the polishing rate will be low, and if it exceeds 50 kPa, the polishing liquid will not easily enter between the surface to be polished and the polishing pad, resulting in a low polishing rate or a cause of polishing scratches. So it is not practical.
  • the solidified solidified body is processed to a predetermined thickness, and the surface is polished in advance, such as mirror polishing, and then subjected to CMP. It is preferable to do so.
  • This mirror polishing is performed by mechanical polishing (MP) or the like.
  • the solidified body used in the method for producing a ceramic composite for light conversion according to the present invention is produced by melting and solidifying a raw material oxide.
  • a solidified body by a simple method of cooling and condensing a melt charged in a crucible held at a predetermined temperature while controlling the cooling temperature.
  • it is produced by a unidirectional solidification method. Is. This is because the unidirectional solidification causes the contained crystal phase to continuously grow in a single crystal state, thereby reducing the attenuation of light within the member.
  • Such a solidified body except that it contains an oxide crystal phase that emits fluorescence, is disclosed in Japanese Patent Application Laid-Open Nos. 7-149597, 7-187893, and JP-A-8-81257, JP-A-8-253389, JP-A-8-253390, JP-A-9-67194, and corresponding US applications (US Pat. Nos. 5,569,547 and 5). , 484, 752, and 5,902, 963) can be used, and those that can be manufactured by the manufacturing method disclosed in these applications (patents) can be used. Can be used.
  • the oxide crystal phase other than the Al 2 O 3 contains a YAG: Ce phase that emits fluorescence, or Ce and Gd.
  • the YAG phase (hereinafter referred to as YAG: Gd, Ce phase) is preferable.
  • the YAG: Ce phase or the YAG: Gd Ce phase has higher alkali resistance than the Al 2 O 3 phase
  • a polishing liquid having a pH adjusted to 11 to 12 the Al
  • the polishing rate of the 2 O 3 phase and the YAG: Ce phase or the YAG: Gd Ce phase can be controlled.
  • the step difference between the Al 2 O 3 phase and the YAG: Ce phase or the YAG: Gd Ce phase is 0.010 ⁇ m or less. Can be.
  • the oxide crystal phase other than Al 2 O 3 is a YAG: Ce phase or a YAG: Gd, Ce phase
  • the Al 2 O 3 phase Transmits part of blue light
  • the oxide crystal phase other than Al 2 O 3 absorbs part of blue light and emits yellow fluorescence, whereby the blue light and yellow light are mixed to emit white light.
  • the oxide crystal phase other than Al 2 O 3 is a fluorescent substance that emits fluorescence
  • the ceramic composite for light conversion in which YAG: Ce phase or YAG: Gd, Ce phase is known, and the present applicant It is disclosed in WO 2008-041566 and the like filed earlier.
  • YAG: Ce phase is purple to blue excitation light of 400 - 500 nm, emit fluorescence having a peak wavelength of 530 ⁇ 560nm, YAG: Gd, Ce phase, since it emits fluorescence having a peak wavelength of 540 ⁇ 580 nm, Al 2 O
  • the solidified body in which the oxide crystal phase other than 3 is a YAG: Ce phase or a YAG: Gd, Ce phase is used for light conversion for a white light emitting device used in combination with a light emitting element of blue light or violet light. It is suitable as a member.
  • each phase of the solidified body does not have a boundary layer such as amorphous, and the oxide crystal phases are in direct contact with each other. For this reason, there is little loss of light in the ceramic composite for light conversion, and the light transmittance is also high.
  • the oxide crystal phases that emit fluorescence fluorescent phases
  • the oxide crystal phases are distributed uniformly in the ceramic composite for light conversion as a whole. , Homogeneous fluorescence without partial bias can be obtained.
  • fluorescence from the phosphor phase and transmitted light from the transmitted light phase can be obtained simultaneously.
  • the excitation light can be efficiently incident on the ceramic composite for light conversion, and strong white light can be obtained. . Therefore, by applying a very smooth joint surface between the ceramic composite for light conversion and the blue light emitting element, for example, direct bonding between the ceramic composite for light conversion and the blue light emitting element is applied by a surface activated bonding method or the like. can do.
  • the solidified body is entirely composed of an inorganic oxide ceramic, it has excellent heat resistance and durability, and is not deteriorated by light. Therefore, it is possible to provide a ceramic composite for light conversion suitable for constituting a highly reliable white light emitting device with high reliability in combination with a blue light emitting element.
  • the ceramic composite for light conversion according to the present invention comprises a solidified body having a structure in which an Al 2 O 3 phase and an oxide crystal phase other than Al 2 O 3 are continuously and three-dimensionally entangled with each other.
  • the step difference between the Al 2 O 3 phase and the oxide crystal phase other than Al 2 O 3 is 0.010 ⁇ m or less.
  • the oxide crystal phases other than the Al 2 O 3 phase and Al 2 O 3 have a structure in which they are continuously and three-dimensionally entangled with each other, and the oxides other than the Al 2 O 3 phase and the Al 2 O 3 as a whole
  • the crystal phase is uniformly distributed in the ceramic composite for light conversion.
  • the surface of the ceramic composite for light conversion is composed of an Al 2 O 3 phase and an oxide crystal phase other than Al 2 O 3 , and is composed of an Al 2 O 3 phase and an oxide crystal phase other than Al 2 O 3 . It is preferable to form an extremely flat surface having a step difference of 0.010 ⁇ m or less. Such a step adjustment can be performed by appropriately changing the content, the pH of the CMP polishing liquid, the unit load of CMP, and the like, in which the above-described CMP polishing liquid contains silica particles.
  • FIG. 1 shows a schematic cross-sectional view of a light-emitting device using a ceramic composite for light conversion produced by the method for producing a ceramic composite for light conversion according to the present invention.
  • This light emitting device comprises a light emitting element 2 that emits light having a peak at a wavelength of 400 to 500 nm, and a ceramic composite 1 for light conversion including an oxide crystal phase that emits yellow fluorescence having a peak at a wavelength of 550 to 560 nm.
  • the phosphor contained in the ceramic composite 1 for light conversion is irradiated with the light emitted from the light-emitting ceramic composite 1 and the light transmitted through the ceramic composite 1 for light conversion and the light emitted from the light-emitting element 2 are emitted. It is characterized by using fluorescence converted in wavelength by a phase.
  • symbol 3 is a flip chip electrode terminal
  • symbol 4 is an anode electrode
  • symbol 5 is a cathode electrode.
  • a light emitting element that emits light having a peak at a wavelength of 400 to 500 nm is an element that emits violet to blue light.
  • violet to blue light emitted from a light emitting diode element or an element that generates laser light is emitted at the wavelength.
  • the light is incident on the ceramic composite for light conversion whose chromaticity is adjusted so that white is obtained. Due to the structure in which the yellow fluorescence from the phosphor phase excited thereby and the violet to blue transmitted light from the non-phosphor phase are uniformly entangled with each other in a continuous and three-dimensional manner. By mixing uniformly, white light with small color unevenness can be obtained.
  • a white light emitting device in which a light emitting diode element is used as the light emitting element is referred to as a white light emitting diode.
  • this raw material was directly charged into a molybdenum crucible and set in a unidirectional solidification apparatus, and the raw material was melted under a pressure of 1.33 ⁇ 10 ⁇ 3 Pa (10 ⁇ 5 Torr).
  • the crucible is lowered at a rate of 5 mm / hour in the same atmosphere, and the Al 2 O 3 (sapphire) phase and the fluorescent oxide crystal phase (YAG phase) are continuously and three-dimensionally mutually.
  • a solidified body having an intertwined tissue was obtained.
  • FIG. 2 shows the surface of a solidified body used in this mirror-polished ceramic composite for light conversion. Solidified material used in the ceramic composite for light conversion is performed a general mirror-polished, the surface shape of the Al 2 O 3 phase from the difference of material properties becomes convex, emits Al 2 O 3 phase and fluorescence A surface having a phase difference of about 0.020 ⁇ m from the oxide crystal phase (YAG phase) is formed.
  • Example 1 of the ceramic composite for light conversion according to the present invention will be described.
  • a disk-like sample having a diameter of 2 inches and a thickness of 0.4 mm was cut out from the solidified body produced in the reference example.
  • Discoid sample, a mirror surface state in advance by mirror polishing, the surface shape and the step level difference of the disc-shaped sample was subjected to shape measurement using an AFM (atomic force microscope), Al 2 O 3 phase And the oxide crystal phase (YAG phase) emitting fluorescence was 0.020 ⁇ m.
  • This disk-shaped sample was subjected to CMP under the following conditions to obtain a ceramic composite for light conversion according to Example 1.
  • the polishing liquid for CMP is 1 mol / mol in “COMPOL (registered trademark) Type 120” of colloidal silica polishing slurry manufactured by Fujimi Incorporated, diluted with pure water so that the content of silica particles is 0.4% by mass.
  • L aqueous NaOH solution was added to adjust the pH to 11.5.
  • this CMP polishing liquid is supplied to “IC1000 (registered trademark) polishing pad” manufactured by Nitta Haas Co., Ltd. having a grid-like groove interval of 15 mm, and the polishing pad is applied to the ceramic for light conversion at a unit load of 10 kPa.
  • CMP was performed by pressing against the plate-like sample of the composite and setting the processing time to 150 minutes. During processing, a 1 mol / L NaOH aqueous solution was added as needed to adjust the pH of the CMP polishing liquid to be in the range of 11-12.
  • Example 2 of the ceramic composite for light conversion according to the present invention will be described.
  • a ceramic composite for light conversion according to Example 2 was produced in the same manner as in Example 1 except that the content of silica particles in the polishing liquid for CMP was 4% by mass and the processing time for CMP was 60 minutes.
  • Example 3 of the ceramic composite for light conversion according to the present invention will be described.
  • the same disk-shaped sample as Example 1 was cut out from the solidified body manufactured in the reference example.
  • Discoid sample, a mirror surface state in advance by mirror polishing, the surface shape and the step level difference of the disc-shaped sample was subjected to shape measurement using an AFM (atomic force microscope), Al 2 O 3 phase And the oxide crystal phase (YAG phase) emitting fluorescence was 0.015 ⁇ m.
  • a square plate sample having a square of 15 mm ⁇ 15 mm was cut out from the disk sample, and CMP was performed under the following conditions to obtain a ceramic composite for light conversion according to Example 3.
  • the polishing liquid for CMP is 1 mol / mol in “Quartron (registered trademark) PL-2L” of colloidal silica polishing slurry manufactured by Fuso Chemical Industry Co., Ltd. diluted with pure water so that the content of silica particles is 2% by mass. L aqueous NaOH solution was added to adjust the pH to 11.5. Then, this CMP polishing liquid is supplied to “IC1000 (registered trademark) polishing pad” manufactured by Nitta Haas Co., Ltd. having a grid-like groove interval of 15 mm, and the polishing pad is applied to the ceramic for light conversion at a unit load of 10 kPa.
  • CMP was performed by pressing against the plate-like sample of the composite and setting the processing time to 270 minutes. During processing, a 1 mol / L NaOH aqueous solution was added as needed to adjust the pH of the CMP polishing liquid to be in the range of 11-12.
  • Example 4 of the ceramic composite for light conversion according to the present invention will be described.
  • the same disk-shaped sample as Example 1 was cut out from the solidified body manufactured in the reference example.
  • Discoid sample, a mirror surface state in advance by mirror polishing, the surface shape and the step level difference of the disc-shaped sample was subjected to shape measurement using an AFM (atomic force microscope), Al 2 O 3 phase And the oxide crystal phase (YAG phase) emitting fluorescence was 0.015 ⁇ m.
  • This disc-shaped sample was subjected to CMP under the following conditions to obtain a ceramic composite for light conversion according to Example 4.
  • the polishing liquid for CMP is 1 mol / mol in “Quartron (registered trademark) PL-2L” of colloidal silica polishing slurry manufactured by Fuso Chemical Industry Co., Ltd. diluted with pure water so that the silica particle content is 2% by mass. L aqueous NaOH solution was added to adjust the pH to 11.5. Then, this CMP polishing liquid is supplied to “IC1000 (registered trademark) polishing pad” manufactured by Nitta Haas Co., Ltd. having a grid-like groove interval of 15 mm, and the polishing pad is applied to the above-mentioned ceramic for light conversion at a unit load of 13 kPa.
  • CMP was performed by pressing against the plate-like sample of the composite and setting the processing time to 270 minutes. During processing, a 1 mol / L NaOH aqueous solution was added as needed to adjust the pH of the CMP polishing liquid to be in the range of 11-12.
  • Example 5 of the ceramic composite for light conversion according to the present invention will be described.
  • a ceramic composite for light conversion according to Example 5 was produced in the same manner as in Example 4 except that the unit load of the polishing pad was 33 kPa and the CMP processing time was 180 minutes. Moreover, about Example 5, the state of pH during processing is shown in FIG.
  • Example 6 of the ceramic composite for light conversion according to the present invention will be described.
  • a ceramic composite for light conversion according to Example 6 was produced in the same manner as in Example 4 except that the unit load of the polishing pad was 50 kPa and the processing time of CMP was 120 minutes.
  • Example 7 of the ceramic composite for light conversion according to the present invention will be described.
  • a ceramic composite for light conversion according to Example 7 was produced in the same manner as in Example 4 except that the grid-like groove interval of the polishing pad was 7 mm, the unit load of the polishing pad was 33 kPa, and the CMP processing time was 90 minutes. .
  • Comparative Example 1 As a comparison, a disk-like sample similar to Example 1 and Example 2 was cut out from the solidified body produced in the reference example, preliminarily made into a mirror surface state by mirror polishing, and light conversion according to Comparative Example 1 was performed as follows. A ceramic composite was obtained.
  • a stock solution of COMPOL-120 (manufactured by Fujimi Incorporated) in which the content of silica particles in the polishing liquid for CMP is 40% by mass without being diluted with pure water is used as a polishing pad (IC-1000, lattice groove interval) 15 mm: supplied to Nitta Hass Co.), where the polishing pad, is pressed against the plate-like sample of the light converting ceramic composite for a unit load 10 kPa, CMP is performed for 60 minute processing time, Al 2
  • the surface shape of the O 3 phase was convex, and the step difference between the Al 2 O 3 phase and the oxide crystal phase (YAG phase) emitting fluorescence was about 0.05 ⁇ m.
  • Table 1 the surface shape of the ceramic composite for light conversion which concerns on the comparative example 1 is shown in FIG.
  • Comparative Example 2 Next, as a comparison, a square plate-like sample similar to that in Example 3 was cut out from the solidified body manufactured in the reference example, and was previously made into a mirror state by mirror polishing, and the light conversion according to Comparative Example 2 was performed as follows. A ceramic composite was obtained.
  • Comparative Example 3 For comparison, a rectangular plate-like sample similar to that of Example 3 was cut out from the solidified body manufactured in the reference example, and was preliminarily mirror-finished by mirror polishing.
  • the light conversion ceramic according to Comparative Example 3 was as follows. A complex was obtained.
  • PL-2L manufactured by Fuso Chemical Industry Co., Ltd.
  • This CMP polishing liquid is supplied to a polishing pad (IC-1000, lattice groove interval 15 mm: manufactured by Nita Hass), and the polishing pad is pressed against the plate-shaped sample of the ceramic composite for light conversion at a unit load of 10 kPa.
  • the CMP was performed by setting the processing time to 60 minutes, and the ceramic composite for light conversion according to Comparative Example 3 was obtained.
  • Comparative Example 4 Next, as a comparison, Comparative Example 3 except that a disk-like sample similar to Example 4 was cut out from the solidified body produced in the reference example, the unit load of the polishing pad was 13 kPa, and the CMP processing time was 270 minutes. In the same manner, a ceramic composite for light conversion according to Comparative Example 4 was produced.
  • the pH of the polishing slurry for CMP during processing is adjusted to 11 to 12, and the smaller the content of silica particles in the polishing slurry for CMP, the more the Al 2 O 3 phase and the oxide crystal phase that emits fluorescence (YAG The phase difference with the phase is small.
  • a surface having a very small step difference between the Al 2 O 3 phase and the fluorescent oxide crystal phase (YAG phase) is obtained. Can be formed.
  • the step difference between the Al 2 O 3 phase and the fluorescent oxide crystal phase (YAG phase) is caused by the fact that the alkaline CMP polishing liquid contains silica particles, the content thereof, and the pH of the CMP polishing liquid. Further, it can be eliminated by CMP controlled by the unit load of CMP and the interval between polishing pad grooves processed on the surface of the polishing pad.

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Abstract

L'invention concerne un composite céramique de photoconversion et son procédé de fabrication dans lequel même dans un cas d'un produit de solidification formé par une pluralité de phases cristallines d'oxyde qui sont enchevêtrées en continu et en trois dimensions les unes avec les autres, la surface du produit de solidification est plane. Le procédé de fabrication d'un composite céramique de photoconversion est caractérisé en ce qu'il comprend une étape de polissage dans laquelle un polissage chimico-mécanique (CMP) est effectué sur la surface d'un produit de solidification ayant une structure dans laquelle une phase d'Al2O3 et une phase cristalline d'un oxyde autre qu'Al2O3 sont enchevêtrées en continu et en trois dimensions l'une avec l'autre, le pH d'un liquide de polissage lorsque le CMP est effectué étant ajusté à 10-11. Le composite céramique de photoconversion comprend un produit de solidification ayant une structure dans laquelle une phase d'Al2O3 et une phase cristalline d'un oxyde autre qu'Al2O3 sont enchevêtrées en continu et en trois dimensions l'une avec l'autre, la différence de niveau entre la phase d'Al2O3 et la phase cristalline d'un oxyde sur la surface du produit de solidification étant de 0,010 µm ou moins.
PCT/JP2011/077918 2010-12-10 2011-12-02 Composite céramique de photoconversion et son procédé de fabrication WO2012077599A1 (fr)

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JP2012547826A JP5370595B2 (ja) 2010-12-10 2011-12-02 光変換用セラミック複合体及びその製造方法
EP11846090.6A EP2650082B1 (fr) 2010-12-10 2011-12-02 Composite céramique de photoconversion et son procédé de fabrication
US13/992,805 US9543480B2 (en) 2010-12-10 2011-12-02 Ceramic composite for light conversion and method for manufacture thereof
CN201180058469.5A CN103260825B (zh) 2010-12-10 2011-12-02 光转换用陶瓷复合体及其制造方法
KR1020137017758A KR20130103784A (ko) 2010-12-10 2011-12-02 광변환용 세라믹 복합체 및 그 제조방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2730369A4 (fr) * 2011-07-08 2014-05-14 Ube Industries Procédé de production d'un composite de céramique pour photoconversion

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6518628B2 (ja) * 2016-06-27 2019-05-22 日本特殊陶業株式会社 セラミックス焼結体

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU483381A1 (ru) * 1972-08-28 1975-09-05 Предприятие П/Я Х-5936 Способ обработки шлифованных керамических изделий
JPH07149597A (ja) 1993-10-08 1995-06-13 Ube Ind Ltd セラミックス複合材料
JPH07187893A (ja) 1993-11-12 1995-07-25 Ube Ind Ltd セラミックス複合材料
US5484752A (en) 1993-11-12 1996-01-16 Ube Industries, Ltd. Ceramic composite material
JPH0881257A (ja) 1993-11-12 1996-03-26 Ube Ind Ltd セラミックス複合材料
JPH08253389A (ja) 1995-01-19 1996-10-01 Ube Ind Ltd セラミックス複合材料
JPH08253390A (ja) 1995-01-19 1996-10-01 Ube Ind Ltd セラミックス複合材料
JPH0967194A (ja) 1995-01-19 1997-03-11 Ube Ind Ltd セラミックス複合材料
US5902963A (en) 1996-09-18 1999-05-11 Schneider Electric High voltage insulator
JP2004335722A (ja) * 2003-05-07 2004-11-25 Rodel Nitta Co 半導体ウェハ研磨用組成物
WO2007018222A1 (fr) 2005-08-10 2007-02-15 Ube Industries, Ltd. Substrat pour diode électroluminescente et diode électroluminescente
WO2007148829A1 (fr) * 2006-06-22 2007-12-27 Ube Industries, Ltd. Composite pour la conversion de lumière, dispositif électroluminescent l'utilisant, et procédé de contrôle de la nuance de couleur
WO2008041566A1 (fr) 2006-09-25 2008-04-10 Ube Industries, Ltd. Composite céramique pour phototransformation et dispositif d'émission de lumière utilisant celui-ci
JP2008277341A (ja) * 2007-04-25 2008-11-13 Ube Ind Ltd 光変換用セラミックス複合体を用いた発光装置
WO2009031696A1 (fr) * 2007-09-04 2009-03-12 Ube Industries, Ltd. Substrat composite pour la formation d'élément electroluminescent et procédé de fabrication du substrat composite

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464429B1 (ko) * 2002-08-16 2005-01-03 삼성전자주식회사 화학 기계적 폴리싱 슬러리 및 이를 사용한 화학 기계적폴리싱 방법
JP2003117806A (ja) * 2001-10-10 2003-04-23 Kobe Steel Ltd 多結晶セラミックスの鏡面研磨方法
JP2004335772A (ja) * 2003-05-08 2004-11-25 Mitsubishi Cable Ind Ltd 光増幅用フォトニッククリスタルファイバ
CN1246408C (zh) * 2003-11-26 2006-03-22 中国科学院金属研究所 一种化学机械抛光液
WO2006001316A1 (fr) * 2004-06-24 2006-01-05 Ube Industries, Ltd. Dispositif à diode électroluminescente blanche
JP2008177341A (ja) * 2007-01-18 2008-07-31 Matsushita Electric Ind Co Ltd 面発光半導体レーザ及びその製造方法
KR101428719B1 (ko) 2008-05-22 2014-08-12 삼성전자 주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을이용하여 제조한 발광 소자 및 발광 장치
JP5303228B2 (ja) * 2008-09-16 2013-10-02 コバレントマテリアル株式会社 Ｙａｇ多結晶基板の研磨方法
WO2013008751A1 (fr) * 2011-07-08 2013-01-17 宇部興産株式会社 Procédé de production d'un composite de céramique pour photoconversion

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU483381A1 (ru) * 1972-08-28 1975-09-05 Предприятие П/Я Х-5936 Способ обработки шлифованных керамических изделий
US5569547A (en) 1993-10-08 1996-10-29 Ube Industries, Ltd. Ceramic composite material
JPH07149597A (ja) 1993-10-08 1995-06-13 Ube Ind Ltd セラミックス複合材料
JPH07187893A (ja) 1993-11-12 1995-07-25 Ube Ind Ltd セラミックス複合材料
US5484752A (en) 1993-11-12 1996-01-16 Ube Industries, Ltd. Ceramic composite material
JPH0881257A (ja) 1993-11-12 1996-03-26 Ube Ind Ltd セラミックス複合材料
JPH0967194A (ja) 1995-01-19 1997-03-11 Ube Ind Ltd セラミックス複合材料
JPH08253390A (ja) 1995-01-19 1996-10-01 Ube Ind Ltd セラミックス複合材料
JPH08253389A (ja) 1995-01-19 1996-10-01 Ube Ind Ltd セラミックス複合材料
US5902963A (en) 1996-09-18 1999-05-11 Schneider Electric High voltage insulator
JP2004335722A (ja) * 2003-05-07 2004-11-25 Rodel Nitta Co 半導体ウェハ研磨用組成物
WO2007018222A1 (fr) 2005-08-10 2007-02-15 Ube Industries, Ltd. Substrat pour diode électroluminescente et diode électroluminescente
WO2007148829A1 (fr) * 2006-06-22 2007-12-27 Ube Industries, Ltd. Composite pour la conversion de lumière, dispositif électroluminescent l'utilisant, et procédé de contrôle de la nuance de couleur
WO2008041566A1 (fr) 2006-09-25 2008-04-10 Ube Industries, Ltd. Composite céramique pour phototransformation et dispositif d'émission de lumière utilisant celui-ci
JP2008277341A (ja) * 2007-04-25 2008-11-13 Ube Ind Ltd 光変換用セラミックス複合体を用いた発光装置
WO2009031696A1 (fr) * 2007-09-04 2009-03-12 Ube Industries, Ltd. Substrat composite pour la formation d'élément electroluminescent et procédé de fabrication du substrat composite

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2650082A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2730369A4 (fr) * 2011-07-08 2014-05-14 Ube Industries Procédé de production d'un composite de céramique pour photoconversion

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EP2650082B1 (fr) 2022-02-02
TW201226529A (en) 2012-07-01
MY160228A (en) 2017-02-28
US20130327985A1 (en) 2013-12-12
KR20130103784A (ko) 2013-09-24
JP5370595B2 (ja) 2013-12-18
US9543480B2 (en) 2017-01-10
TWI473872B (zh) 2015-02-21
CN103260825A (zh) 2013-08-21
EP2650082A4 (fr) 2018-01-03
CN103260825B (zh) 2016-05-04
JPWO2012077599A1 (ja) 2014-05-19
EP2650082A1 (fr) 2013-10-16

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