WO2009031696A1 - Substrat composite pour la formation d'élément electroluminescent et procédé de fabrication du substrat composite - Google Patents

Substrat composite pour la formation d'élément electroluminescent et procédé de fabrication du substrat composite Download PDF

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WO2009031696A1
WO2009031696A1 PCT/JP2008/066272 JP2008066272W WO2009031696A1 WO 2009031696 A1 WO2009031696 A1 WO 2009031696A1 JP 2008066272 W JP2008066272 W JP 2008066272W WO 2009031696 A1 WO2009031696 A1 WO 2009031696A1
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light
layer
forming
substrate
phase
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PCT/JP2008/066272
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English (en)
Japanese (ja)
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Fumito Furuuchi
Hideki Hirayama
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Ube Industries, Ltd.
Riken
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Priority to JP2009531310A priority Critical patent/JP5388068B2/ja
Publication of WO2009031696A1 publication Critical patent/WO2009031696A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
    • C04B2235/3865—Aluminium nitrides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
    • C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride

Definitions

  • a light emitting device forming composite substrate and its manufacturing method
  • the present invention relates to a composite substrate for forming a light-emitting element that can be used for a display, illumination, backlight light source, and the like, and a method for manufacturing the same, and particularly to a composite substrate for forming a light-emitting diode device using a light conversion material that emits fluorescence. And its manufacturing method.
  • a light conversion comprising a ceramic composite oxide
  • a light-emitting layer is formed by forming a nitride semiconductor layer consisting of I n x A 1 y G a
  • the method using GaN as the buffer layer shown in the example of Patent Document 2 has a problem that a nitride semiconductor layer is easily formed preferentially in the A 1 2 O 3 phase. Therefore, A l 2 ⁇ 3 nitride is preferentially formed on the phase semiconductors, for mutually isolated in a region other than A 1 2 ⁇ 3-phase, excellent device formation becomes difficult.
  • the difference in lattice constant and thermal expansion coefficient between the substrate and the nitride semiconductor layer will eventually cause distortion as the film thickness increases, which tends to adversely affect device characteristics. Becomes stronger.
  • the inventors of the present invention are the same as or higher than the nitride semiconductor layer growth temperature.
  • the present invention provides a light-emitting element forming method in which a nitride buffer layer containing at least A 1 is formed on a light conversion material substrate, and the buffer layer covers the entire surface of the light conversion material substrate. Concerning composite substrates.
  • a preferred embodiment of the present invention relates to a composite substrate for forming a light-emitting element, characterized in that the phosphor phase has a garnet-type structure containing at least Y element and A 1 element 9 Ce ⁇ ⁇ .
  • the buffer layer is formed on a light conversion material substrate having a C 1 surface of the A 1 2 O 3 phase and a (1 1 2) surface of the phosphor phase as main surfaces at the same time.
  • the present invention relates to a composite substrate for forming a light emitting device characterized by
  • a composite substrate for forming a light emitting element wherein a nitride buffer layer containing at least A 1 is formed on the light conversion material substrate, and the light conversion material substrate is entirely covered by the buffer layer. Relates to the manufacturing method.
  • the nitride semiconductor layer is formed by an organic metal vapor phase reaction method. It relates to the manufacturing method.
  • the present invention relates to a method for manufacturing a composite substrate for forming a light emitting element, characterized in that a single layer of nitride buffer containing A 1 is formed at a temperature of not less than 90 and not more than 140.
  • the composite substrate for light-emitting element forming fabricated so by forming the nitride semiconductor layer in the same manner to each other from both phases of the oxide phase which emits fluorescence having a A 1 2 ⁇ 3 phase and garnet preparative structure A high-performance white light-emitting element can be manufactured through the same process.
  • the nitride semiconductor layer that forms such a light-emitting layer includes I n x A l y G a, y N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ ⁇ + y ⁇ 1) force, etc.
  • a nitride semiconductor layer is preferable.
  • FIGS. 1A and 1B are schematic cross-sectional views showing an embodiment of a composite substrate for forming a light emitting device of the present invention.
  • Fig. 2 is an electron micrograph showing an example of the structure of the light-converting material.
  • Fig. 3 is a microscopic cross-sectional photo of the G a N layer obtained in Example 1.
  • Fig. 4 is a G a obtained in Comparative Example 1. It is a microscope cross-sectional photograph of N layer
  • the form of the light-emitting element for forming a composite substrate of the present invention for example, the light conversion material surface of the substrate 1 as shown in FIG. 1 A, emits A l 2 ⁇ 3-phase 1 a phosphor intertwined complexity oxide According to the difference in crystal of the physical phase lb
  • the buffer layer 2 is formed on the entire surface.
  • the buffer layer includes a nitride layer 2a including at least A 1.
  • a GaN layer 2b may be formed on the nitride layer containing A 1.
  • the light conversion material substrate constituting the composite substrate for forming a light emitting element of the present invention has at least two or more oxide phases selected from a single metal oxide and a composite metal oxide in a continuous and three-dimensional manner. consists solidified body formed by intertwined, one at least of the oxide phases in the ⁇ solid is a 1 2 0 3 crystal phase, also the oxide phase in said solidified body At least one of them contains a metal element oxide that emits fluorescence.
  • a single metal oxide is an oxide of one kind of metal
  • a composite metal oxide is an oxide of two or more kinds of metals. Each oxide is in a single crystal state and has a three-dimensionally entangled structure.
  • Such single metal oxides aluminum oxide (A l 2 ⁇ 3), zirconium oxide (Z R_ ⁇ 2), magnesium oxide (M G_ ⁇ ), oxidation silicon (S i 0 2), oxide titanium (T i ⁇ 2) barium oxide (B a O), oxidation Beri Li um (B e O), calcium oxide (C a O), oxidized chromium ⁇ beam (C r 2 0 3) other such rare earth elements oxide (L a 2 ⁇ 3, Y 2 0 3, C E_ ⁇ 2, P r 6 O u, N d 2 ⁇ 3, S m 2 0 3, G d 2 ⁇ 3, E u 2 ⁇ 3, T b 4 0 7 , D y 2 03, Ho 2 0 3 , Er 2 0 3 , Tm 2 0 3 , Y b 2 0 3 , and Lu 2 0 3 ).
  • L a A l O have C e A l ⁇ 3
  • P r A l O have N d A l ⁇ 3, S m A l ⁇ 3, E u A l ⁇ 3, G d A l ⁇ 3 , D y A 1 0 3 , E r A 1 O 3 , Y b 4 A l 2 0 9 , Y 3 A 1 5 0 12 , Er 3 A 1 5 0, T b 3 A 1 5 0, 2, ll A l 2 0 3 'L a 2 0 3 , ll A l 2 0 3 * N d 2 0 3 , 3 D y 2 O 3 ⁇ ⁇ A 1 2 0 3 , 2 D y 2 0 3 'A l 2 0 3 , ll A l 2 0 3 ' P r 2 0 3 , E u A 1,!
  • the light conversion material substrate is composed of two or more kinds of oxide phases, various crystal lattice spacings can be selected depending on the combination thereof. For this reason, it is possible to match the lattice spacing of various semiconductors in the light-emitting diode, it is possible to form a good semiconductor layer with good crystal structure consistency and few defects, and light emission formed in the semiconductor layer Efficient light emission can be obtained from the layer. Further, since the light conversion material substrate is also a phosphor, it can emit uniform fluorescence by light from the light emitting layer in the semiconductor layer.
  • the combination comprising A 1 2 ⁇ 3 crystal is a single metal oxide is preferably solidified Named as a body.
  • the A 1 2 0 3 crystal has good crystal structure matching with typical In G a N that forms a nitride semiconductor layer that emits visible light, and forms a good light emitting layer of nitride semiconductor Because it can.
  • the A 1 2 ⁇ 3 combination of crystalline and at least a composite metal oxide activated by auction um garnet preparative crystal single crystal preferable that the al solidified body.
  • a gannet-type crystal is represented by the structural formula of A 3 X 5 O l 2 , where A is one selected from the group of Y, T b, S m, G d, La, Er It is particularly preferable that one of the above elements, also in the structural formula X, contains one or more elements selected from A 1 and Ga. This is because the light conversion material composed of this particularly preferable combination absorbs a part of purple to blue light while transmitting yellow light and emits yellow fluorescence. Among them, the combination with Y 3 Al 5 O l 2 activated with cerium is suitable because it emits strong fluorescence.
  • a 1, 0 3 / Y 3 A 1 s O which is one embodiment shown in FIGS. 1A and 1B , 2: light conversion material board C e is, A 1 2 0 3 single crystal and Y 3 A 15 O, 2: C e is composed of a single crystal, the oxide phase continuously and three-dimensionally cross It is composed of two single crystal phases as a whole. It is very important that each phase is a single crystal. A good quality nitride semiconductor layer cannot be formed unless it is a single crystal.
  • the optical conversion material substrate is obtained, for example, by cutting the A 1 2 O 3 / Y 3 A 15 O 2 : Ce solidified body into a predetermined thickness, polishing the surface to a required state, and washing it. can get.
  • the cutting direction of the light conversion material substrate is particularly preferably the (0 0 0 1) plane of A 1 2 0 3 as the main surface.
  • a 1 2 0 3 has a crystal structure similar to that of nitride compound semiconductor I ⁇ ⁇ ⁇ 1 y G a, _ x _ y N, and has an A 1 2 0 3 (0 0 0 1) plane
  • I n x A l y G a ⁇ x _ y N have small differences in lattice spacing and good consistency. Therefore, by using the (0 0 0 1) plane of A 1 2 O 3 , a good nitride semiconductor layer can be obtained and a good light emitting layer can be formed.
  • the solidified body constituting the light conversion material used in the present invention is produced by solidifying the raw metal oxide after melting. For example, it is possible to obtain a solidified body by a simple method of cooling and condensing a melt charged in a crucible held at a predetermined temperature while controlling the cooling temperature, but the most preferable one is made by a unidirectional solidification method. It is. This is because unidirectional solidification causes the contained crystal phases to continuously grow in a single crystal state, and each phase has a single crystal orientation.
  • the light-converting material used in the present invention is disclosed in Japanese Patent Application Laid-Open No. 7 — 1 4 9 5 9 7 by the applicant of the present application, except that at least one phase contains a metal element oxide that emits fluorescence.
  • Japanese Patent Application Laid-Open No. 9 6 7 1 94 and U.S. applications corresponding thereto US Pat. Nos. 5, 5 6 9 and 5 4 7 No. 5, 4 8 4, 7 52, No. 5, 9 0 2, 9 6 3), etc., etc.
  • the nitride semiconductor layer formed on the composite substrate for forming a light emitting element is composed of a plurality of nitride compound semiconductor layers.
  • the multiple nitride compound semiconductor layers are represented by the general formula: I n x A 1 y G a, _ x ⁇ y N (0 ⁇ x ⁇ 1 ⁇ 0 ⁇ y ⁇ l, 0 ⁇ x + y ⁇ 1 It is preferable that it is composed of a nitride compound represented by
  • the nitride semiconductor layer has a light emitting layer that emits at least visible light.
  • nitride-based compound semiconductor layers adjusted to the optimum composition for each function in each layer.
  • a plurality of nitride compound semiconductor layers and methods for forming these layers are disclosed in, for example, Jpn.J.App1.Phys.Vol.34 (1 995), L797, etc. As disclosed, this is a known technique. Specifically, a G a N buffer layer (thickness 30 nm) and an n electrode are formed on the substrate.
  • N-type — G a N Si contact layer (thickness 5 m)
  • n Type 1 A l. 1 G a. 9 N S i layer, n type 1 In. .
  • the structure of the light emitting layer may be a multiple quantum well structure, a homo structure, a hetero structure, or a double hetero structure.
  • the nitride semiconductor layer formed on the light emitting element forming composite substrate is the surface of the light emitting element forming composite substrate. Have a nitride layer containing A 1 Therefore, the GaN buffer layer (thickness 30 nm) can be omitted.
  • the light emitting layer in the nitride semiconductor layer formed on the composite substrate for light emitting element formation in the present invention is preferably visible light.
  • visible light passes through the light conversion material substrate constituting the composite substrate for forming a light emitting element of the present invention, the wavelength-converted fluorescence and the visible light before the conversion are mixed, and depending on the wavelength of the mixed light New pseudo light can be obtained.
  • the visible light preferably emits blue or purple. If luminescent color was blue or a violet, YAG light in the blue or purple from the light emitting layer is a substrate: By entering the C e monocrystalline, Y 3 A 1 5 O, 2: C e crystals from yellow fluorescence occurs, the a 1 2 ⁇ 3 crystal light blue or violet transmitted as it is.
  • the light emitting layer of the nitride semiconductor layer is, I n x G a,.
  • the light emission wavelength can be changed by changing the molar ratio of In contained in the InGaN layer forming the light emitting layer.
  • the nitride semiconductor layer can be preferably formed thereon.
  • the nitride semiconductor layer can be formed without newly providing a buffer layer.
  • the nitride semiconductor layer is formed by vapor deposition, it is desirable that the surface of the substrate be uniform.
  • the formation of the buffer layer is preferably performed by a gas phase reaction method capable of obtaining a high-quality buffer layer.
  • organic gold from the viewpoint of quality and growth rate It is preferably formed by a chemical vapor deposition method (hereinafter referred to as MO C VD).
  • MO C VD is a method in which an organic metal gas as a raw material is pushed over a substrate heated with H 2 or N 2 to cause crystal growth on the substrate surface.
  • TMA trimethylaluminum
  • TEA triethylaluminum
  • TMG trimethylgallium
  • TEG triethylgallium
  • Etc As the N source, those generally used for forming a nitride semiconductor layer in MOC VD, such as ammonia or hydrazine, can be used.
  • the single nitride buffer layer covers the entire surface of the substrate.
  • the Dobo formation of the nitride semiconductor layer there is no boundary between A 1 2 O 3 phase of the light conversion material substrate and a phosphor phase, makes it possible to stably form a laminated structure.
  • the buffer layer in the present invention is characterized by including a nitride layer containing at least A 1. Specifically, it is preferable to include a nitride layer represented by A ⁇ Ga ⁇ N (0 ⁇ X ⁇ 1). More preferably, it contains A 1 N. It is preferable to form the film under a temperature condition from 90 to 1400 so that the formation temperature is equal to or higher than that of a nitride semiconductor. More preferably, the temperature conditions from 1 1 5 0 to 1 4 0 0 ° C It is good to form with.
  • the buffer layer has better crystallinity because its crystallinity greatly affects the device characteristics of the nitride semiconductor layer formed on the buffer layer.
  • the method of improving the crystallinity of A lx G a ⁇ N (0 ⁇ X ⁇ 1) as a nitride layer containing A 1 can be used to improve the device characteristics of the nitride semiconductor layer regardless of temperature conditions .
  • G a inevitably decreases in the resulting AG a, — x N (0 ⁇ x ⁇ 1) composition. From the quality of the nitride layer formed as a buffer layer, one having a lower Ga composition is better.
  • GaN gallium nitride layer containing A 1 under the condition that the lateral crystal growth rate is increased.
  • Forming a nitride layer comprising A 1 is performed similarly nucleation on A 1 2 ⁇ 3-phase and the phosphor phase in the light conversion material substrate, A 1 - N is coupled energy conservation compared to G a _ N one is high and the mobility of the surface is small, only the nitride layer comprising a 1, slight differences of the nitride layer in the a 1 2 0 3 phase and the phosphor phase is the difference between the crystallinity and surface morphology May appear.
  • G a N By growing G a N, migration is likely to occur on nitride crystals grown in the Al 2 0 3 phase and the phosphor phase, making it possible to eliminate the difference between the crystal phases. Become.
  • the n-type is formed by doping impurities such as Si, G e, Se, Te, etc., the above effect and n-type—G a It is suitable because it can also be used to form an N contact layer.
  • the same effect can be obtained by using a method in which migration is performed predominately by controlling the supply method of the source gas.
  • the nitride semiconductor layer can be formed without one buffer.
  • a vapor phase growth method is used to form the nitride semiconductor layer. Since the nitride semiconductor layer is formed, nitrogen is easily lost during heating. By heating while flowing the Group V source gas, nitrogen deficiency is reduced, and a stable nitride semiconductor layer can be formed.
  • a light conversion material substrate is used, and a buffer layer having the same structure as the light emitting element forming composite substrate of the present invention is formed on the substrate, and a nitride semiconductor layer is formed continuously therewith. It is also possible. When forming the nitride semiconductor layer, it is possible to obtain a light-emitting element that has no nitrogen deficiency due to reheating and has similar characteristics.
  • this raw material is charged into a molybdenum crucible as it is, and the unidirectional solidification is performed. And set to a solid unit, to melt the raw material under pressure of 1. 3 3 X l CT 3 P a (1 0- 5 T orr).
  • the crucible is lowered at a speed of 20 m mZ time in the same atmosphere, and consists of two oxide phases: A l 2 0 3 (sapphire) phase, (Y, C e) JA l 5 O l 2 phase A solidified body was obtained.
  • Figure 2 shows the cross-sectional structure perpendicular to the solidification direction of the solidified body.
  • the white part is Y 3 A 1 5 O, 2 : Ce crystal
  • the black part is A 1 2 O 3 crystal. It can be seen that the two crystals have a structure intertwined with each other.
  • the resulting solidified body was measured for pole figure by an X-ray diffraction to examine the crystal axis, it was cut substrate obtained by a principal C-plane of the A 1 2 0 3 crystal phase.
  • the light conversion material cut out was polished and washed, and this was used as a light conversion material substrate.
  • the buffer layer for the composite substrate for light emitting element formation was formed using a general MO C VD furnace.
  • the source gas used was TMA as the A 1 source, TMG as the Ga source, and TES (tetraethylsilane) as the Si source.
  • the source gas was introduced into the reactor using H 2 and crystal was grown on the heated substrate for the light conversion material.
  • the optical conversion material substrate set in the furnace was heated and heated in an H 2 atmosphere to clean the substrate.
  • the setting was changed to the target temperature, the source gas was flowed, and a nitride layer containing A 1 was formed.
  • 4 jLi m of GaN: Si was grown under conditions that promote lateral growth, and the target composite substrate for light-emitting element formation was fabricated.
  • la is the A 1 2 0 3 phase of the substrate
  • 1 b is the Y 3 A l 5 ⁇ 12 : Ce phase
  • 2 a is the A 1 N buffer layer
  • 2 b is G a N: S i Is a layer.
  • the A 1 N buffer layer 2 a is continuous laterally on the substrate.
  • Figure 4 shows a cross-sectional photograph of the GaN layer.
  • the formation of G a N was clearly confirmed in the A l 2 O 3 phase.
  • the phosphor phase although some of its surface by lateral growth from A l 2 ⁇ 3 phases covered by G a N, can see the growth of G a N from the phosphor phase It cannot be seen that the smoothness of the surface is inferior.
  • Fig. 1 shows a cross-sectional photograph of the GaN layer.
  • the G a N layer 2 grown on the A 1 2 O 3 phase 1 a consists of a noffer G a N layer (3 O nm) 2 c and an n-type 1 0 & ⁇ : 3 ⁇ layer (4 111) Even the entire G a N layer 2 combined with 2d was not laterally continuous (thus, the thickness of the buffer G a N layer 2 c is larger than the 300 nm of Example 1). For example 4 zm, the result is the same). (Example 2, Comparative Example 2)
  • G a N formed in the same manner as in Example 1 and Comparative Example 1: S i layer formation, followed by n-type _A l Q 1 Ga. 9 N: S i layer, n-type one I n D. 5 Ga Q. 95 N: Si layer, single quantum well structure type light emitting layer InGaN layer, p-type-AlO l GaQ. 9 N: Mg barrier layer, p electrode A p-type -GaN: Mg layer was formed, and electrodes were formed on the n-type contact layer and the p-type contact layer to produce a light-emitting diode device.
  • Example 2 similar to the production of the composite substrate for light emitting element formation, any semiconductor layer can be formed uniformly, and light emission from the entire surface was confirmed.
  • Example 1 Other than using a nitride layer containing A 1 of 300 nm A lo ⁇ G ao. G N or A l Q. 25 G ao. 75 N at 1 1 5 0 ° C Same as Example 1. As a result of observation with an electron microscope, as in Example 1, the boundary between the A 1 2 0 3 phase and the phosphor phase was not observed, and a uniform GaN surface was formed on the composite substrate. The situation is the same as in Figure 3. From the above results, it is clear that the use of the composite substrate for forming a light emitting element having one buffer layer according to the present invention makes it possible to more effectively utilize the light conversion material substrate and form a good white light emitting element. .

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  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un procédé selon lequel une couche tampon de nitrure est formée sur toute la surface d'un substrat comprenant une phase Al2O3 ainsi qu'une phase oxyde qui présente une structure de type grenat et émet une fluorescence, pour former une couche semi-conductrice à base de nitrure. L'invention concerne également un substrat composite pour la formation d'un élément électroluminescent constitué d'un substrat de matériau de conversion de lumière et d'une couche de nitrure formée sur le substrat de matériau de conversion de lumière. Le substrat de matériau de conversion de lumière présente une structure dans laquelle au moins deux couches d'oxyde sont entrelacées en continu en trois dimensions. Chaque couche d'oxyde comprend la phase Al2O3 et au moins une phase oxyde qui émet une fluorescence. La couche de nitrure comprend une couche de nitrure comprenant au moins de l'aluminium sur une interface avec le substrat de conversion de lumière, de préférence, au moins une couche de AlxGa1-xN (0<x≤1).
PCT/JP2008/066272 2007-09-04 2008-09-03 Substrat composite pour la formation d'élément electroluminescent et procédé de fabrication du substrat composite WO2009031696A1 (fr)

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