TW200917536A - Composite substrate for forming light emitting element and method for manufacturing the composite substrate - Google Patents

Abstract

A uniform nitride buffer layer is formed over the entire surface of a substrate including both an Al2O3 phase and an oxide phase which has a garnet type structure and emits fluorescence, for forming a nitride semiconductor layer. A composite substrate for forming the light emitting element is composed of a light conversion material substrate and a nitride layer formed on the light conversion material substrate. The light conversion material substrate has a structure wherein at least two or more oxide layers are continuously and three-dimensionally entwined with each other. Each oxide layer includes the Al2O3 phase and at least one oxide phase which emits fluorescence. The nitride layer has a nitride layer including at least Al on an interface to the light conversion substrate, preferably, at least one layer of AlxGa1-xN (0<x=1).

Description

200917536 IX. Description of the invention: [Technical field 3 of the invention] This application claims priority based on the basic application of the invention application No. 2007-229263 filed on September 4, 2007, to the Japanese Patent Office, and is hereby incorporated by reference. The content of its application. The present invention relates to a composite substrate for forming a light-emitting element that can be used for a display, an illumination, a backlight source, and the like, and a method of manufacturing the same, and more particularly to a method for forming a light-emitting diode element using a light-emitting material that emits fluorescence. Composite substrate and method of manufacturing the same. [Prior Art] In recent years, a blue light-emitting element using a nitride-based compound semiconductor (InxAlyGa^-y N, 〇Sx$l, 〇$y$l, 〇Sx + y$ 1) is a white light-emitting source. The development of diodes is booming. The white light-emitting diode is light in weight and does not use mercury, and has a long life. Therefore, it is predicted that the demand for the next 15 will rapidly expand. To convert the blue light of the blue light-emitting element into

In the method of white light, the most common method is disclosed in Japanese Laid-Open Patent Publication No. 2000-208815, which is provided with a blue light containing an absorbing portion and a yellow light in front of a light-emitting element that emits blue light. The coating of the phosphor and the blue layer of the light source and the yellow light from the coating are mixed into a 20-color forming layer, and the blue and yellow colors in the complementary color relationship are mixed to obtain a virtual white color. Heretofore, in the case of coating, a mixture of powder and epoxy resin activated by hydrazine d AI5 〇ι 2 : Ce was used. However, in the method, when the coating is applied, the uneven distribution of the phosphor powder contained in the coating is easily caused, and the amount of the phosphor powder of each of the individual light-emitting diodes is varied, and 5 200917536 The color of the LED is not uniform. In order to avoid the above problem, the present inventors have proposed a method in the PCT/JP2005/019739 (W02006/043719) to form Ii^AlyGa^yN (OSxgl, 5 1) on a substrate of a light conversion material composed of a ceramic composite oxide. And 丨) the nitride semiconductor layer is formed such that the blue light emitted by the luminescent layer directly enters the substrate, and the substrate itself emits a homogeneous yellow fluorescing, so that the coating layer containing the phosphor powder can be used only With the luminescent wafer', a colorless and uniform white color can be obtained. However, in the method of using GaN as the buffer layer 10 shown in the embodiment of Patent Document 2, there is a problem that it is easy to preferentially form a nitride semiconductor layer on the Al2〇3 phase. For this reason, the nitride semiconductors preferentially formed in the Al2〇3 phase are isolated from each other in the field other than the Ah 〇 3 phase. Therefore, it is difficult to perform good element formation. In order to avoid such a problem, when it is desired to cover the surface of the substrate with a nitride semiconductor layer, it is necessary to thicken the film first. However, as a result of the thick film formation, in addition to the increase in the thickness of the ruthenium, the difference between the lattice constant of the substrate and the nitride semiconductor layer and the thermal expansion coefficient eventually causes deformation, and the tendency to adversely affect the device characteristics is increasing. Therefore, in order to obtain an element having good characteristics, it is important to form a uniform layer from the beginning of the formation of the nitride semiconductor layer, that is, to form a uniform layer over the entire substrate. In order to achieve such a point, it is necessary to form a light-emitting element by the same step by a step of forming a nitride semiconductor layer of 20 α! 2 〇 3 phase and a garnet-type oxide structure having two phases. At that time, the characteristics of the obtained components can be expected to be improved. The present inventors have found that when a nitride semiconductor layer is formed on a substrate of a light conversion material, at least the temperature of the growth temperature of the nitride semiconductor layer, 200917536 or at a high temperature above the growth temperature, a nitrogen containing at least eight bismuth is formed. When the compound layer is used as a buffer layer, the crystal growth of the nitride semiconductor layer may be carried out in the same manner as the Al 2 〇 3 phase from the oxide phase in the substrate. The present invention has been completed. [Invention] The present invention relates to a composite substrate for forming a light-emitting element, characterized in that a nitride buffer layer containing at least A1 is formed on a substrate of a light conversion material, and the buffer layer covers the entire surface of the light conversion material substrate. By. Further, a preferred embodiment of the present invention is a composite substrate for forming a light-emitting element, characterized in that the phosphor phase contains at least a garnet structure of a γ element, an A1 element, and a Ce element. Further, a preferred embodiment of the present invention relates to a composite substrate for forming a light-emitting element, characterized in that the buffer layer is formed on the C-plane of the Al2〇3 phase and the (112) plane of the phosphor phase. As the main surface of the light change 15 on the material substrate. Further, a method for producing a composite substrate for forming a light-emitting element, characterized in that a nitride buffer layer containing at least A1 is formed on a substrate of the light conversion material, and the entire surface of the light conversion material substrate is covered by the buffer layer. Further, a preferred embodiment relates to a method for producing a composite substrate for forming an inventive device, characterized in that the formation of the nitride semiconductor layer is carried out by an organometallic gas phase reaction method. Further, a preferred embodiment relates to a method for producing a composite substrate for forming an inventive device, characterized in that the nitride buffer layer containing A1 is formed at a temperature of 900 ° C or more and less than 140 CTC. 7 200917536 In the composite substrate for forming a light-emitting element thus produced, a nitride semiconductor layer can be formed by a two-phase phase having an ai2〇3 phase and a stone-bearing structure and emitting an ice oxide phase. In the step, the white light-emitting element with high characteristics can be counted. 5 for the vaporized semiconductor layer forming such a light-emitting layer,

InxAlyGa丨_x_yN (the x$xgi nitride semiconductor layer is preferable. [FIG. 1A and 1B] FIG. 1A and 1B are schematic diagrams showing the 10 composite substrate for forming a light-emitting element of the present invention. A cross-sectional view of one embodiment. The figure is an electron micrograph of a structure of a light-converting material. The third figure is a photograph of a GaN-like wheel surface obtained by _1. Photograph of a microscopic cross section of the GaN layer obtained in Comparative Example 1. [Purity mode] The surface of the composite substrate for forming a light-emitting element of the present invention, for example, on the surface of a light conversion material substrate as shown in Fig. 1A The buffer layer 2 is formed in a comprehensive manner regardless of the difference between the complex winding-like Al 2 〇 3 phase 13 and the fluorescing oxide phase crystal. The buffer layer 2 contains a nitride layer 2a containing at least 2 Å A1. Further, in order to improve the homogeneity of the surface of the composite substrate as shown in the above (7), the GaN layer 2b may be formed on the nitride layer containing A1. The optical conversion material substrate constituting the composite substrate for forming a light-emitting element of the present invention Composed of the following solidified body, the solidified body Forming at least one of the oxide phases of at least one of the oxides of the single metal oxide and the composite metal oxide continuously and intertwined into a three-dimensional space, wherein at least one of the oxide phases in the solidified body is Ah a crystal In addition, at least one of the oxide phases in the solidified body contains a metal element oxide which emits fluorescence, and the single metal oxide refers to an oxide of one metal, and the composite metal oxide refers to more than 52 kinds. The oxide of the metal. The various oxides are formed into a single crystal state and become a structure in which they are entangled into a three-dimensional space. Such a single metal oxide may be an oxide such as alumina (Abo3) or yttrium oxide (Zr〇). 2), magnesium oxide (MgO), cerium oxide (Si〇2), titanium oxide (Ti〇2), cerium oxide (Β &amp; 〇), cerium oxide (Be0), calcium oxide (CaO), chromium oxide (Cr2 〇 3), etc., another rare earth element oxide (La203, Y2〇3, Ce〇2, Pr6〇n, Nd2 〇3, Sm2 〇3, Gd2 〇3, 〇3, Tb4 〇, Take 2 〇3 h〇2 〇3 Er2〇3, Tm203, Yb2〇3, Lu203) as an example. The compound may be LaA103, CeA103, PrA103, NdA103, SmA103, EuA1〇3, GdAl〇3, DyA103, ErA103, Yb4 Al2 〇9, γ3 Al5 〇丨2, b Er3Al5〇12, Tb3Al5〇i2, 11Al2〇3 Office, iiai office

Nd2〇3, 3Dy2〇3.5Al2〇3, 2Dy203.Al203, UAl203 · Pr2〇3, EuA1&quot;〇18, 2Gd203 ·Α1203,11Α12〇3 .Sm203,

Yb3Al5〇12, CeAlu〇18, Er4Al2〇9, etc. are taken as examples. Since the light conversion material substrate is composed of two or more oxide phases, various lattice gaps can be selected by the combination of the two. For this reason, it is possible to match the lattice gap of various semiconductors of the light-emitting diode, and the crystal structure has good matching property, and it is possible to form a good semiconductor layer with few defects, and the light-emitting layer formed in the semiconductor layer can obtain efficiency. Good light. Further, the light conversion material substrate is also a phosphorescent material. Therefore, it is possible to emit uniform fluorescent light of 200917536 by the light of the light-emitting layer in the semiconductor layer. 5 10 15 When the semiconductor layer for a light-emitting diode is a nitride semiconductor layer, among the solidified bodies constituting the substrate of the light conversion material, a combination of Ah- 3 crystals containing a single-metal oxide is preferable. example. As described above, this is because the Al2〇3 crystal system and the nitride semiconductor which constitutes the nitride semiconductor layer emitting visible light: a representative compound have good crystal structure matching, and can form a good light-emitting layer of a nitrogen (tetra) semiconductor. Further, a solidified body of a combination of a ruthenium 3 crystal and a ruthenium-type crystal single crystal of a composite metal oxide activated by ruthenium is exemplified. The garnet-type crystal system is represented by the structural formula of Α3χ5〇&quot;, and in the structural formula, Α contains one or more (four) selected from the group consisting of γ, Tb, Sm, Gd, ", &amp; In the formula, X contains one selected from =Al, Ga! It is especially good when the above elements are used. This is because the light-converting material composed of the special group &amp; is caused by the purple light-side to allow the blue light to pass through, and the one side to receive the - part, and the yellow fluorescent light is emitted. Among them, the combination of Y3Al5〇12 activated by the decoration can emit strong fluorescence, so it is preferable. The Al2 (VY3Al5〇12:Ce material exchange substrate) shown in Figs. 1A and 1B is formed by a single crystal and a YAW: ^ single crystal structure oxide phase continuous and intertwined into three light spaces. The whole ^ is composed of a phase of 曰 2 ^ crystal. The phase of each phase is extremely heavy.

In the case of a light-changing broadcast, it is not a good quality nitride semiconductor layer. = The material substrate can be formed by, for example, cutting the above-mentioned AW to be condensed into a thickness, and grinding the surface to the extent necessary. It is preferable that the cut surface of the light conversion material substrate is particularly the main surface of the 1203. The crystal structure similar to Inx Aly Gai_x_yN of the compound semiconductor of nitridation 20 200917536 is lying, and the difference in lattice spacing between the Al 2 〇 3 (〇〇〇l) plane and the InxAlyGai-x-yN is small, and the matching is good. For this reason, a nitride semiconductor layer of good quality can be obtained by using the (0001) plane of Al2〇3 to form a favorable light-emitting layer. 5 A solidification system constituting the optical conversion material used in the present invention is produced by solidifying a metal oxide. For example, a solidified body can be obtained by a simple method of cooling and coagulating a molten material which has been placed in a crucible maintained at a predetermined temperature while controlling the cooling temperature, but it is preferable to manufacture by a one-way solidification method. This is because the crystal phase contained is continuously grown in a single crystal state by unidirectional solidification so that each phase forms a single crystal orientation. The optical conversion material used in the present invention, in addition to the metal element oxide which emits at least one phase of the fluorescing, may be disclosed in the applicant's publication No. H07-149597, as disclosed in the present application. U.S. Patent Nos. H07-187893, H08-81257, H08-253389, 15H08-253390, and H09-67194, and the corresponding US application (U.S. Patent Nos. 5,569,547, 5,484,752, No. 5,902,963) The same compound as the ceramic composite material in the publication can be manufactured by the manufacturing method disclosed in the application (patent). The disclosure of such applications or patents is hereby incorporated. 2) The nitride semiconductor layer formed on the composite substrate for forming a light-emitting element is composed of a layer of a plurality of nitride-based compound semiconductors. It is preferable that each of the layers of the nitride-based compound semiconductor is composed of a nitride-based compound represented by the general formula Inx Aly Ga, _x_yN (0 芸 x each, OSyS, OSx + y each). Further, the nitride semiconductor layer has at least a light-emitting layer that emits visible light. In order to form a good luminescent layer for 200917536, it is preferable to stack a layer of a plurality of nitride-based compound semiconductors which are adjusted to be optimal for each functional layer in each layer. A layer of a nitride-based compound semiconductor layer and a method for forming the same layer, as disclosed in Appl. Phys. Vol. 34 (1995), L797, and the like, are well-known 5 techniques. The specific method may be as follows. On the substrate, a buffer layer of GaN (thickness: 30 nm) is sequentially stacked by a method such as M〇CVD, and an n-type of an n-electrode is formed.

GaN: Si contact layer (thickness 5/zm), n-type-AlcuGa^N: Si layer, n-type-Ino.QsGao.MN: Si layer, nGaN layer forming a single quantum well structured light-emitting layer, p-type one AlojGao.gN : Mg barrier layer, p-type p-type GaN: 10 Mg layer. The structure of the light-emitting layer may be a multiple quantum well structure, a homo structure, a hetero structure or a double structure. In the present invention, the substrate is a nitride semiconductor layer formed on the composite substrate for forming a light-emitting element using the composite substrate for forming a light-emitting element of the present invention, and the composite substrate for forming a light-emitting element has a nitrogen containing A1 on the surface. The I5 layer "can therefore omit the buffer layer of GaN (thickness 30 nm). The light-emitting layer formed in the nitride semiconductor layer of the composite substrate for forming a light-emitting element of the present invention is preferably one which emits visible light. When the visible light penetrates the light conversion material substrate constituting the composite substrate for forming a light-emitting element of the present invention, 'the wavelength-converted fluorescent light and the visible light before the conversion are mixed, and a new virtual light can be obtained in response to the wavelength of the 20 mixed light rays. . Further, it is preferred that the light system emits blue or purple. When the illuminating color is blue or purple, when the blue or violet light from the luminescent layer is incident on the YAG: Ce single crystal of the substrate, the yellow glory is emitted by the Y3 AI5 : Ce crystal, and the blue or purple AI2 〇 3 crystal is used. The light is transmitted through it. The light-transmissive light-transforming material 12 200917536 The continuous and intertwined structures in the three-dimensional space in the single crystal substrate are mixed and then emitted, so that white color having no color unevenness and homogeneity can be obtained. For this reason, it is preferable that the light-emitting layer in the nitride semiconductor layer is composed of InxGai® (〇$χ$). The molar ratio of the germanium contained in the light-emitting layer is changed to change the light-emitting wavelength. When the buffer layer of the present invention is disposed, it is preferable to form the nitride semiconductor layer thereon. By using the composite substrate for forming a light-emitting element having the nitride buffer layer of the present invention, it is possible to eliminate the need for a new buffer layer. The nitride semiconductor layer is formed directly in the state. Further, in general, the formation of the nitride half-conductor layer is performed by a vapor phase growth reaction, and therefore it is desirable that the surface of the substrate is uniform. For this, with the nitride semiconductor layer The formation of the buffer layer is also preferably carried out by a gas phase reaction method in which a high-quality buffer layer can be obtained, especially from the viewpoint of quality and growth rate, by chemical vapor growth of an organic metal. The method (hereinafter referred to as M0CVD) is preferably formed by 15. The MOCVD system extrudes the organic metal gas of the raw material on a substrate heated by Hz or N2 to cause crystal growth on the surface of the substrate. For the raw material gas of the buffer layer, the Bagua source can use TMA (trimethylaluminum) or TEA (diethylaluminum), etc., Ga# can use tmG (trimethylgallium) or TEG (three-e-record), etc. When ammonia or lining is used, a material used in the formation of a nitrogen semiconductor film layer in the general image can be used. The nitride buffer layer of the present invention is characterized by covering the surface of the substrate in its entirety. Therefore, when the nitride semiconductor layer is formed, the laminated structure can be stably formed in a state where the boundary between the octagonal phase and the phosphor phase of the optical conversion substrate is not present. Further, the A1203 is preferred. Growth is carried out, 13 200917536 can also obtain a uniform surface, but if there is no nitride buffer layer of the present invention, only a light conversion material substrate (composite oxide containing ALA phase and phosphor phase) is used to form a nitride semiconductor layer. In the case of a uniform surface, it is necessary to form a thick film, and even if a uniform surface is obtained, cracks may occur or the substrate 5 may be twisted due to deformation thereof, which may adversely affect the element. However, when the composite substrate having the buffer layer of the present invention is used, ,no Thick filming can achieve sufficient filming and hardly affect the element characteristics. The buffer layer of the present invention is characterized by containing at least an eight-by-nitride layer. Specifically, it contains AlxGai-xN (0&lt;XSl). The nitride layer is preferably at least 10. More preferably, it contains A1N, and it is preferably formed at a temperature of 900 to 1400 ° C which is more than the degree of formation of the nitride semiconductor. 115 〇 t to 140 (the temperature condition of TC is preferably formed. When 9 〇〇 ° C to 1200 ° C, it is difficult to make the nitride layer grown in the Alz a phase and the phosphor phase uniform, but in the phosphor A nitride layer can also be formed in the phase. Further, when a nitride layer is formed at a higher temperature, it is easier to obtain a uniform surface. Further, the crystallinity of the buffer layer greatly affects the element characteristics of the nitride semiconductor layer formed on the buffer layer, and is more suitable for crystallinity. The nitride layer containing A1, in order to enhance the crystallinity of AlxGai-xN (0&lt;xS1), irrespective of temperature conditions, is advantageous for the enhancement of the element characteristics 20 of the nitride semiconductor layer. For example, WM0CVD, at a higher temperature, Ga is necessarily reduced in the composition of the obtained AlxGai_xN (0 &lt; x$l). From the viewpoint of the quality of the nitride layer formed as a buffer layer, it is preferable to have a low Ga composition. Further, it is more preferable to form GaN on the nitride layer containing A1 above, in the case where GaN is formed under conditions in which the lateral crystal growth rate becomes faster. The formation of the nitride layer containing A1 200917536 is the same as the phosphor phase of the A丨2 〇3 phase of the substrate of the light conversion material, but the bonding energy of Al-Ν is higher than that of Ga-Ν. The mobility of the surface is small, so that only the nitride layer containing A1, the slight difference between the Α1ζ〇3 phase and the nitride layer in the phosphor phase is different in crystallinity and surface morphology. When GaN is grown, it is easy to cause movement on the nitride crystal which grows in the Aha phase and the phosphor phase, and the difference in each crystal phase can be eliminated. When GaN is formed under conditions that increase the growth rate of the lateral crystal, borrow &amp;

The doping of impurities such as Ge, Se, and Te, after the 俟n type, can achieve the above effects and the formation of the n-type GaN contact layer in parallel, which is suitable. In order to increase the crystal growth rate of the horizontal growth of 3 &amp; 1^, a well-known method of changing the growth conditions of the crystal growth temperature, the v/m ratio, or the like can be used instead of selecting the method. The nitride layer of A1 can be preferentially moved by the method of supplying the raw material gas, and the same effect can be obtained. 15 The composite substrate for forming a light-emitting element according to the present invention can be used without a buffer layer. A nitride semiconductor layer is formed. In the formation of the nitride semiconductor layer, a vapor phase growth method is generally used. Since the nitride semiconductor layer is formed, it is easy to cause nitrogen deficiency during heating. Further, a nitrogen nitride defect can be reduced, and a stable nitride semiconductor layer can be formed. Further, according to the present invention, a light conversion material substrate can be used, and a buffer having the same structure as the composite substrate for forming a light-emitting element of the present invention can be formed on the substrate. The layer 'continues the layer to form a germanide semiconductor layer. When the nitride semiconductor layer is formed, there is no nitrogen defect caused by reheating, and it is obtained. Light-emitting elements having the same characteristics. 15 200917536 EXAMPLES Hereinafter, the present invention will be described in more detail with reference to specific examples. (Example 1) 6^-eight 1203 powder (purity 99.99%) was weighed and measured in eight 103/2. 5 0.82 mol, Y203 powder (purity 99.9%) 0.175 mol, Ce02 powder (purity 99.9%) 0.005 mol in Y03/2 conversion, so that the powder is in ethanol, wet mixing by ball mill After 16 hours, the ethanol was de-intermediated using an evaporator to obtain a raw material powder which was preliminarily dissolved in a vacuum furnace as a raw material for unidirectional solidification. 10 Next, the raw material was charged into a molybdenum crucible and mounted in a single The raw material was melted at a pressure of 1.33 x HT3Pa (10 Torr - 5 Torr) to the solidification apparatus. Secondly, the crucible was lowered at 20 mm/hr under the same ambient gas to obtain an Al2〇3 (sapphire) phase and (Y, Ce). A solidified body composed of two oxide phases of 3Al5012 phase. 15 The cross-sectional structure perpendicular to the solidification direction of the solidified body is shown in Fig. 2. The white part is Y3A15012: Ce crystal, and the black part is Al2〇3 crystal. a group of two crystals intertwined The obtained solidification system is diffracted by X-rays, and the pole pattern is measured, and the direction of the crystal axis is checked. The substrate of the C surface of the A 2 3 〇 3 crystal phase is cut out. The light conversion material was polished and washed to obtain a substrate for a light conversion material. The obtained optical conversion material substrate was subjected to X-ray diffraction measurement again, and it was confirmed that the error between the surface of the substrate and the C surface of Al2〇3 was &lt; Within ±2° The buffer layer for the composite substrate for forming a light-emitting element is formed by using 16 200917536 in a general MOCVD furnace. The feed gas system uses TMA as the A1 source, TMG as the Ga source, and TES as the Si source (tetrahydrofuran). The raw material gas system is introduced into the reaction furnace by H2, and crystal growth is performed on the heated light conversion material substrate. 5 Installed (settlng) The substrate of the light conversion material in the furnace is heated and heated under H2 ambient gas to purify the substrate. The setting is changed to the target temperature, and the raw material gas is flowed to form a nitride layer containing eight. Then, the growth of 4#m2GaN:si is carried out under the conditions of promoting lateral growth, and a target composite substrate for forming a light-emitting element is produced. The nitride layer of 10 $ A1 is formed by forming 300 nm of A1N at 1300 C. As a result of observation by an electron microscope, as shown in the photograph of the cross section of the GaN layer in Fig. 3, the boundary between the Ah 〇 3 phase and the phosphor phase was not observed, and a uniform GaN surface was formed. The darker portion of the substrate is the Ai2〇3 phase, and the whiter portion is the YAG phase. The GaN thin film system is grown into two phases of Ai2〇3 phase and YAG phase. The result is that the surface is smooth. In Fig. 3, the symbol la is the Al2〇3 phase of the substrate, the symbol lb is the Y3A15012: Ce phase, the symbol 2a is the A1N buffer layer, and the symbol 2b is the GaN: Si layer. The A1N buffer layer 2a is continuously extended in the lateral direction on the substrate. (Comparative Example 1) 20 A substrate prepared in the same manner as in Example 1 was used for the optical conversion substrate, and 30 nm was formed at 550 ° C according to the above-mentioned paper Jpn. J. Appl. Phys. Vol. 34 (1995), L797 '. The GaN ' replaced the nitride layer containing A1, and then an n-type GaN : Si layer was formed under the same conditions as in Example 1. The reason why GaN is formed to have a thickness of 30 nm as a buffer layer is to have a good lattice match with the n 17 200917536 type GaN. Si layer formed above (as described below, the thickness of the buffer GaN layer is increased, and the result is also the same). Figure 4 shows a cross-sectional photograph of the GaN layer. It is apparent that the formation of GaN is confirmed on the phase of the eight 12 03 phase. In the phosphor phase, a part of the surface of the a1203 phase is covered with GaN by a lateral length of 5, but the growth of GaN from the phosphor phase cannot be confirmed, and the smoothness of the surface is known to be deteriorated. In Fig. 4, the GaN layer 2 grown on the Ah 〇 3 phase 1 a is bonded to the GaN layer 2 which is a buffer GaN layer (30 nm) 2c and an n-type GaN : Si layer (4 &quot; m) 2d. As a whole, there is also no lateral continuity (thus, the thickness of the buffer GaN layer 2c is made thicker than 10300 nm of the first embodiment, for example, 4 &quot; m, and the result is the same). (Example 2, Comparative Example 2) In order to examine the characteristics of the element, the GaN: Si layer formed in the same manner as in Example 比较 and Comparative Example ,, followed by formation of n-type - A1 〇 i Ga 〇 9 N: layer, n type -

In〇.05GaQ.95N : Si layer, forming a single-quantum well structured light-emitting layer (10) layer, p-type-A1〇.lGa〇.9N: Mg barrier layer, p-type formed with p-electrode

The GaN. Mg layer' is formed by electrodes on the n-type contact layer and the p-type contact layer to form a light-emitting diode element. In the same manner as in the case of fabricating the above-mentioned light-emitting element forming substrate, each of the semiconductor layers was formed in a uniform manner, and it was confirmed that the film was completely emitted in Comparative Example 2, and sufficient light emission was obtained. It is difficult to form the electrode by its type, and it is not possible to compare the results of the external quantum efficiency of the body element based on the embodiment of the light-emitting diode. 18 25 200917536 Sample external quantum efficiency ratio (based on Example 1) Example 2 1 Comparative Example 2 0.01 (Example 3) For a nitride layer containing A1, AlojGao.g N or Al0 at 300 nm was formed at 1150 °C. .25Ga0.75N was carried out in the same manner as in Example 1 except that this was used. As a result of observation by an electron beam microscope, in the same manner as in Example 1, the boundary between the ai2o3 phase and the phosphor phase could not be observed, and a uniform GaN surface was formed on the composite substrate. The appearance is the same as in Figure 3. From the above results, it is understood that the use of the composite substrate for forming a light-emitting element having a buffer layer of the present invention can more effectively utilize the optical conversion material substrate 10, and can form a good white light-emitting element. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A and FIG. 1B are cross-sectional views showing an embodiment of a composite substrate for forming a light-emitting element of the present invention. Fig. 2 is an electron microscope 15 photograph showing an example of the structure of a light conversion material. Fig. 3 is a photomicrograph of a photomicrograph of the GaN layer obtained in Example 1. Fig. 4 is a photomicrograph of a GaN layer obtained in Comparative Example 1. [Main component symbol description] 1...Light conversion material substrate la. · _Al2〇3 phase lb. .. oxide phase 2...buffer layer 2a...nitride layer 2b.,.GaN layer 2c._. UGaN layer 2d...n type GaN: Si layer 19

Claims (1)

200917536 X. Patent application scope: h—a composite substrate for forming a light-emitting member, comprising: a substrate for optical conversion material; and a nitride layer formed on the substrate of the light conversion material, 5 wherein the substrate of the light conversion material has at least 2 layers The above oxide layer is continuously and mutually formed into a three-dimensional space (four)' and the oxide layer contains an Al2〇3 phase and at least one fluorescent oxide phase, and the nitride layer is on the interface with the optical conversion material substrate. There is at least one nitride layer containing at least one layer of A1. 1. The composite substrate for forming a hair piece according to the first aspect of the invention, wherein the nitride layer containing at least A1 in the nitride layer is represented by a composition formula A1xGai_xN (0&lt;x$i), and the other The nitride layer is represented by the composition formula ΙηχΑ^ (4) χ ^ 1, OSySl, OSx + ygi). The composite substrate for forming a light-emitting element according to the invention of claim 2, wherein one of the oxide phases of the light (four) light in the light conversion material substrate has a composition containing at least a γ element, a phenotype, and The garnet structure of the &amp; element. 4. The light-emitting element of claim 3, wherein the light-converting material substrate has a three-phase (10) and a (112) surface having a gem-type structure and an oxide phase as a main surface. . 5. A kind of illuminating reading, which is a luminescent layer composed of a bismuth compound semiconductor formed on the nitride layer of the substrate. The light-emitting element of claim 5, wherein the light-emitting layer is composed of InxAlyGa^.yNeSxS:1, 0SyS; 1, 0Sx + yS 1). 7. A method of producing a composite substrate for forming a light-emitting element, wherein a nitride layer is formed on a substrate of a light conversion material, and the substrate of the light conversion material has at least two or more oxide layers continuously and intertwined into a three-dimensional space. And the oxide layer contains an ai2o3 phase and an oxide phase emitting at least one type of phosphor, and the nitride layer has at least one layer containing at least one layer of A1 at an interface with the substrate of the light conversion material. In the method of producing a composite substrate for forming a light-emitting element according to the seventh aspect of the invention, in the formation of the nitride layer, at least one layer is formed by an organometallic compound vapor phase growth method. 9. The method for producing a composite substrate for forming a light-emitting element according to claim 7, wherein the formation of the nitride layer is performed by a vapor phase growth method of an organometallic compound, and is 900 ° C or more and less than 1400 °. The temperature below C forms a nitride layer containing A1. twenty one