WO2011132716A1 - Dispositif électroluminescent à semi-conducteur et son procédé de fabrication - Google Patents

Dispositif électroluminescent à semi-conducteur et son procédé de fabrication Download PDF

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Publication number
WO2011132716A1
WO2011132716A1 PCT/JP2011/059750 JP2011059750W WO2011132716A1 WO 2011132716 A1 WO2011132716 A1 WO 2011132716A1 JP 2011059750 W JP2011059750 W JP 2011059750W WO 2011132716 A1 WO2011132716 A1 WO 2011132716A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor light
light emitting
emitting device
phosphor
emitting element
Prior art date
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PCT/JP2011/059750
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English (en)
Japanese (ja)
Inventor
暁夫 笠倉
佐藤　義人
修治 大中
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三菱化学株式会社
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Publication of WO2011132716A1 publication Critical patent/WO2011132716A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Definitions

  • the present invention relates to a semiconductor light-emitting device using a semiconductor light-emitting element, and more particularly to a semiconductor light-emitting device that emits light obtained by wavelength-converting light emitted from a semiconductor light-emitting element with a phosphor and a method for manufacturing the same.
  • Semiconductor light-emitting devices using semiconductor light-emitting elements such as light-emitting diodes and semiconductor laser diodes have been widely used as light sources for various lighting devices and display devices.
  • a semiconductor light-emitting device that combines a plurality of light-emitting diodes that emit different colors to obtain a desired emission color has been developed and used. For example, by combining three types of light emitting diodes that emit blue light, green light, and red light, and adjusting the drive current supplied to each diode, the light emitted from each light emitting diode is synthesized to produce a desired white color.
  • a semiconductor light-emitting device that obtains light is disclosed in Patent Document 1.
  • a light emitting diode has a relatively narrow emission spectrum width, and when light emitted from the light emitting diode is used for illumination as it is, there is a problem that color rendering, which is important in general illumination, decreases. Therefore, in order to solve such problems, a light emitting unit has been developed that emits light after wavelength conversion of light emitted from a light emitting diode with a phosphor, and a semiconductor light emitting device that combines such light emitting units is, for example, It is disclosed in Patent Document 2.
  • a green light emitting unit combining a blue light emitting unit using a blue light emitting diode and a green phosphor that emits green light when excited by blue light emitted from the blue light emitting diode.
  • a red light emitting unit is used in which a blue light emitting diode is combined with a red phosphor that is excited by blue light emitted from the blue light emitting diode and emits red light.
  • the blue light emitting unit, green light emitting unit, and red light emitting unit ensure excellent color rendering by combining the light emitted from each of the light emitting units, and adjust the light output of each light emitting unit to change the light emitting colors of the semiconductor light emitting device. It can be changed to.
  • Patent Document 3 discloses a light emitting device that obtains desired white light by converting the wavelength of light emitted from a semiconductor light emitting element in a fluorescent portion.
  • a near-ultraviolet semiconductor light-emitting element that emits near-ultraviolet light
  • a red phosphor and a green phosphor are used to convert the wavelength of the near-ultraviolet light emitted from the near-ultraviolet semiconductor light-emitting element into desired white light.
  • a fluorescent portion in which a blue phosphor is combined.
  • the fluorescent part includes a first fluorescent part in which the phosphors are combined so that white light having a desired color temperature can be obtained, and white light having a different color temperature from the first fluorescent part. It consists of a second fluorescent part combined with a phosphor.
  • Patent Document 3 In one embodiment disclosed in Patent Document 3, four near-ultraviolet semiconductor light-emitting elements are arranged on a wiring board in four rows in a row, and an annular and conical shape surrounds these near-ultraviolet semiconductor light-emitting devices.
  • a trapezoidal reflector is provided on the wiring board. The reflector is divided into two regions by providing a partition so as to divide the near-ultraviolet semiconductor light-emitting element in one row and the near-ultraviolet semiconductor light-emitting device in the other row.
  • the first fluorescent portion described above is provided so as to cover the near-ultraviolet semiconductor light-emitting element in the region, and the second region described above is provided in the other region.
  • the phosphor of the first fluorescent part is adjusted by adjusting the power supplied to the near ultraviolet semiconductor light emitting element in one column and the power supplied to the near ultraviolet semiconductor light emitting element in the other column.
  • the white light adjusted to an arbitrary color temperature between the color temperature of the white light emitted from the white light and the color temperature of the white light emitted from the phosphor of the second fluorescent part can be obtained.
  • Patent Document 3 In another embodiment disclosed in Patent Document 3, four near-ultraviolet semiconductor light-emitting elements are arranged in two rows on a wiring board in the same manner as in the above-described embodiment, and a frustoconical reflector is formed. Instead, an annular side wall made of a thermosetting or UV curable resin is formed on the wiring board so as to surround the near-ultraviolet semiconductor light emitting element. Further, instead of the above-mentioned partition, a partition wall made of a thermosetting or UV curable resin also separates the near-ultraviolet semiconductor light-emitting element in one row from the near-ultraviolet semiconductor light-emitting device in the other row. Is formed.
  • the first fluorescent portion described above is provided so as to cover the near-ultraviolet semiconductor light-emitting element in the one region formed by the side wall and the partition wall, and the first region described above is provided in the other region.
  • Two fluorescent portions are provided so as to cover the near-ultraviolet semiconductor light emitting element in the region.
  • the second power can be obtained from the color temperature of the white light emitted from the phosphor of the first fluorescent part by adjusting the power supplied to the near-ultraviolet semiconductor light emitting element as in the above-described embodiment.
  • white light adjusted to an arbitrary color temperature up to the color temperature of white light emitted from the fluorescent material of the fluorescent part can be obtained.
  • the semiconductor light emitting device of Patent Document 3 as described above is also used. It is conceivable to adopt a structure similar to that of the apparatus. That is, in this case, a plurality of blue light emitting diodes are divided into three groups and arranged on the wiring board. And a reflector is provided so that these blue light emitting diodes may be surrounded, and a partition is provided so that a blue light emitting diode may be divided into each group.
  • one of the three regions formed by the reflector and the partition is not provided with a fluorescent part containing a phosphor, one of the remaining two regions is a fluorescent part containing a green phosphor, and the other is
  • the semiconductor light emitting device can be configured by providing a fluorescent portion containing a red phosphor.
  • An annular side wall made of the thermosetting or UV curable resin as described above is formed in place of the reflector, and a partition wall made of the same thermosetting or UV curable resin is formed in place of the partition. In this manner, a semiconductor light emitting device can be configured.
  • a reflector is mounted on a wiring board on which a semiconductor light emitting element is disposed, and a partition for partitioning the inside of the reflector into a plurality of regions is mounted. Since it is necessary to accommodate the corresponding fluorescent parts in each region divided by the partition, the manufacturing process becomes complicated, and there are problems in terms of manufacturing man-hours and manufacturing costs. Such a problem also occurs when annular side walls and partition walls made of a thermosetting or UV curable resin are formed instead of the reflector and the partition.
  • the semiconductor light emitting elements are unevenly distributed for each group, and emitted from each group. Since the white light is obtained by combining the light, the quality of the white light is deteriorated due to color unevenness. Therefore, in order to prevent such deterioration in quality, when the semiconductor light emitting elements of the same group are dispersed and arranged instead of one, the number of reflectors and annular side walls further increases. The manufacturing process becomes more complicated.
  • the semiconductor light emitting device configured as described above is applied to a lighting device or a display device, in order to improve the reliability and durability of the semiconductor light emitting device, in addition to the fluorescent part, the reflector and the partition, or the annular side wall and the partition A protective member for protecting the wall from the surrounding environment needs to be attached to the light emitting device. For this reason, there is a problem that the manufacturing process is further complicated.
  • the present invention has been made in view of such a problem, and an object of the present invention is to provide a semiconductor light-emitting device that can simplify the manufacturing process and ensure high reliability and durability, and a method for manufacturing the same. It is to provide.
  • a semiconductor light emitting device of the present invention has a wiring board, a plurality of semiconductor light emitting elements mounted on the wiring board and having a light emission characteristic in a predetermined wavelength range, and a predetermined light transmission characteristic.
  • a cavity having a first surface and a second surface opposite to the first surface is formed in a plate shape and is recessed at a position corresponding to the semiconductor light emitting element on the first surface.
  • a plurality of sealing members; and a fluorescent portion that contains each of the plurality of cavities and contains a phosphor that converts the wavelength of at least part of the light emitted from the semiconductor light emitting device, and the semiconductor light emitting device is mounted
  • the first surface of the sealing member is bonded to one surface of the wiring board thus formed, so that each of the plurality of semiconductor light emitting elements has the fluorescence in the cavity corresponding to the semiconductor light emitting element. Characterized in that it is covered by.
  • one surface of the wiring board on which the semiconductor light emitting element is mounted and the first surface of the sealing member are bonded to each other, whereby the semiconductor light emitting device is formed in the cavity.
  • the element and the fluorescent part are sealed.
  • the water vapor permeability of the wiring board and the sealing member measured at 23 ° C. by the JISK7129B method may be 10 g / m 2 ⁇ day or less, and 23 by the JISK7129B method.
  • the wiring board and the sealing member measured at ° C. may have a water vapor transmission coefficient of 10 g ⁇ mm / m 2 ⁇ day or less.
  • the oxygen permeability of the wiring board and the sealing member measured at 23 ° C. by the JISK7126B (1987) method is 1000 cm 3 / m 2 ⁇ day ⁇ atm or less.
  • the oxygen permeability coefficient of the wiring board and the sealing member measured at 23 ° C. by the JISK7126B (1987) method may be 1000 cm 3 ⁇ mm 2 ⁇ day ⁇ atm or less.
  • the sealing member is one or more selected from the group consisting of glass, acrylic resin, epoxy resin, urethane resin, fluororesin, silicone resin, quartz, and ceramic. It may be composed of the following materials.
  • the semiconductor light emitting device configured as described above, at least a part of the light emitted from the semiconductor light emitting element is in the cavity provided on the first surface of the sealing member corresponding to the semiconductor light emitting element.
  • the wavelength is converted by the phosphor of the fluorescent part that fills the semiconductor light-emitting element and the wavelength-converted light is transmitted through the sealing member and emitted from the second surface of the sealing member.
  • the phosphor converts light emitted from the semiconductor light emitting element into light having a wavelength range different from the predetermined wavelength range
  • the sealing The member has higher transparency than the light emitted from the semiconductor light emitting element with respect to the light whose wavelength is converted by the phosphor, and is emitted from the semiconductor light emitting element toward the sealing member.
  • the light may have a higher reflectance than light that is wavelength-converted by the phosphor and travels from the cavity toward the sealing member.
  • the semiconductor light emitting device When the semiconductor light emitting device is configured in this way, the light whose wavelength is converted by the phosphor transmits the sealing member better than the light emitted from the semiconductor light emitting element, and the second of the sealing member. On the other hand, the light emitted from the semiconductor light emitting element is reflected by the sealing member better than the light wavelength-converted by the phosphor and is wavelength-converted by the phosphor filled in the cavity. Will get the opportunity again.
  • the phosphor contained in the fluorescent portion filled in a part of the plurality of cavities is contained in the remaining cavity of the plurality of cavities. You may have the wavelength conversion characteristic different from the wavelength conversion characteristic which the fluorescent substance contained in the fluorescent part with which it was filled has.
  • the semiconductor light emitting device When the semiconductor light emitting device is configured in this way, the light converted in wavelength by the fluorescent material in the fluorescent part filled in a part of the plurality of cavities and the remaining cavity in the plurality of cavities are filled. Light obtained by synthesizing at least two types of light of which the wavelength has been converted by the phosphor of the fluorescent portion is emitted from the semiconductor light emitting device.
  • a second phosphor that converts the wavelength into a region and a third phosphor that converts the light emitted from the semiconductor light emitting device into a blue region are used, and the plurality of cavities contain the first phosphor A first cavity for filling the fluorescent part, a second cavity for filling the fluorescent part containing the second phosphor, and a third cavity for filling the fluorescent part containing the third phosphor. Also good.
  • the semiconductor light-emitting device When the semiconductor light-emitting device is configured in this way, the light wavelength-converted into the red region by the first phosphor, the light wavelength-converted into the green region by the second phosphor, and the wavelength in the blue region by the third phosphor. Light obtained by combining the converted light is emitted from the semiconductor light emitting device.
  • the fluorescent part may have a laminated structure in which two or more phosphors having different wavelength conversion characteristics are laminated.
  • the semiconductor light emitting device is configured in this way, the combined light of the light whose wavelength is converted in each layer of the phosphor having the laminated structure is emitted from the semiconductor light emitting device.
  • the fluorescent part phosphors filled in some of the cavities have wavelength conversion characteristics different from those of the fluorescent parts filled in the remaining cavities, or as described above.
  • the sealing member by controlling the current flowing through each of the semiconductor light emitting elements via the wiring substrate, the sealing member The chromaticity of light emitted from the second surface may be variable.
  • the semiconductor light emitting element may emit light in a wavelength range of 360 to 480 nm.
  • a method for manufacturing a semiconductor light emitting device of the present invention includes a step of mounting a plurality of semiconductor light emitting elements having light emission characteristics in a predetermined wavelength range on a wiring board, and predetermined light transmission characteristics. And a position corresponding to the semiconductor light emitting element on the first surface of the sealing member formed in a plate shape having the first surface and the second surface opposite to the first surface.
  • the first surface of the sealing member is disposed so that each of the plurality of the semiconductor light emitting elements is located in the corresponding cavity and is covered with the fluorescent portion filled in the cavity.
  • Said arrangement Characterized in that it comprises a step of bonding the substrate.
  • each of the plurality of semiconductor light emitting elements mounted on the wiring board fills a cavity recessed in the first surface of the sealing member corresponding to the semiconductor light emitting element.
  • a semiconductor light emitting device in which the wiring substrate and the sealing member are joined so as to be covered with the fluorescent portion that is formed is obtained.
  • the step of filling the cavity with the fluorescent portion containing the phosphor is performed by using a coating material so that the cavity is exposed and the periphery of the cavity is covered. Masking the first surface of the sealing member; applying the fluorescent part from above the covering; and applying the fluorescent part, and then applying the covering to the first of the sealing member. And a step of removing from one surface.
  • each of the plurality of semiconductor light emitting elements mounted on the wiring board is filled in the cavity recessed in the first surface of the sealing member corresponding to the semiconductor light emitting element.
  • the wiring board and the sealing member are bonded so as to be covered with the fluorescent portion. Therefore, a troublesome structure such as a reflector and a partition for filling a fluorescent part containing a phosphor or an annular side wall and a partition wall is not required, and the semiconductor light emitting device can be simplified. With such a simple configuration, the reliability and durability of the semiconductor light emitting device can be increased, and the number of manufacturing steps and the manufacturing cost can be reduced.
  • the sealing member not only fills the fluorescent part, but also can protect the fluorescent part and the semiconductor light emitting element from the surrounding environment, so members such as a reflector and an annular side wall for filling the fluorescent part, There is no need to separately provide a protective member for protecting the light emitting device from the environment. In this respect, it is possible to further reduce the number of manufacturing steps and the manufacturing cost while further improving the reliability and durability of the semiconductor light emitting device.
  • a semiconductor light emitting device of the present invention after filling each of the cavities recessed in the first surface of the sealing member with a fluorescent part containing a phosphor, a plurality of semiconductor light emitting elements are formed.
  • the mounted wiring board is bonded to the first surface of the sealing member so that each of the semiconductor light emitting elements is located in the corresponding cavity and covered with the fluorescent portion filled in the cavity.
  • the fluorescent substance contained in the fluorescent part filled in the cavity and the fluorescent substance contained in the fluorescent part filled in the remaining cavity may have different wavelength conversion characteristics, or among the plurality of cavities, the first The cavity may be filled with a fluorescent part containing a first phosphor, the second cavity may be filled with a fluorescent part containing a second phosphor, and the third cavity may be filled with a fluorescent part containing a third phosphor.
  • a phosphor that converts light in a predetermined wavelength range emitted from the semiconductor light emitting element into light in a wavelength range different from the predetermined wavelength range is used, and the sealing member is a phosphor.
  • the light having a wavelength higher than that of the light emitted from the semiconductor light emitting element is higher in transmittance than the light emitted from the semiconductor light emitting element, and the light having a higher reflectance than the light converted from wavelength by the phosphor.
  • the light emitted from the semiconductor light emitting element is reflected by the sealing member better than the light wavelength-converted by the phosphor, and the opportunity to be wavelength-converted by the phosphor filled in the cavity is obtained again.
  • the opportunity for wavelength conversion of the light emitted from the semiconductor light emitting element by the phosphor increases.
  • the light whose wavelength has been converted by the phosphor is more satisfactorily transmitted through the sealing member and emitted from the second surface of the sealing member than the light emitted from the semiconductor light emitting element.
  • the amount of light that is wavelength-converted by the phosphor and emitted from the semiconductor light emitting device is increased, and the wavelength of the phosphor is increased. It is possible to reduce the amount of light emitted from the semiconductor light emitting device without being converted.
  • FIG. 1 is a plan view showing an overall configuration of a semiconductor light emitting device according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of the semiconductor light emitting device taken along line II-II in FIG.
  • FIG. 3 is a perspective view showing an example of the surface treatment of the second surface of the sealing member.
  • FIG. 4 is a perspective view showing an example of the surface treatment of the second surface of the sealing member.
  • FIG. 5 is a perspective view showing an example of the surface treatment of the second surface of the sealing member.
  • FIG. 6 is a perspective view illustrating an example of the surface treatment of the second surface of the sealing member.
  • FIG. 7 is a perspective view illustrating an example of the surface treatment of the second surface of the sealing member.
  • FIG. 8 is a perspective view illustrating an example of the surface treatment of the second surface of the sealing member.
  • FIG. 9 is a schematic diagram showing an example of the arrangement of fluorescent portions in the semiconductor light emitting device shown in FIG.
  • FIG. 10 is a schematic diagram showing a first modification of the arrangement of the fluorescent portions in the semiconductor light emitting device shown in FIG.
  • FIG. 11 is a schematic diagram showing a second modification of the arrangement of the fluorescent portions in the semiconductor light emitting device shown in FIG. 12 is a circuit configuration diagram of the semiconductor light emitting device having the fluorescent portion shown in FIG. 9 or FIG.
  • FIG. 13 is a time chart showing an example of the drive current of each light emitting diode in the circuit configuration shown in FIG. FIG.
  • FIG. 14 is a circuit configuration diagram of the semiconductor light emitting device having the fluorescent portion shown in FIG.
  • FIG. 15 is a time chart showing an example of the operating state of each transistor and the drive current of each light emitting diode in the circuit configuration shown in FIG.
  • FIG. 16 is a process diagram illustrating an outline of a manufacturing process for forming a cavity in a sealing member of a semiconductor light emitting device.
  • FIG. 17 is a process diagram showing an outline of a manufacturing process for housing a fluorescent part in a cavity formed in a sealing member.
  • FIG. 18 is a process diagram showing an outline of a manufacturing process for joining a sealing member of a semiconductor light emitting device and a wiring board.
  • 19A is a cross-sectional view of a modification in which the shape of the cavity in the semiconductor light emitting device shown in FIG. 1 is different
  • FIG. 19B is the shape of the cavity in the semiconductor light emitting device shown in FIG. It is sectional drawing of a different modification
  • 20A is a cross-sectional view of a modification in which the shape of the cavity in the semiconductor light emitting device shown in FIG. 1 is different
  • FIG. 20B is the shape of the cavity in the semiconductor light emitting device shown in FIG. It is sectional drawing of a different modification
  • 21A is a cross-sectional view of a modification in which the shape of the cavity in the semiconductor light emitting device shown in FIG. 1 is different
  • FIG. 21A is a cross-sectional view of a modification in which the shape of the cavity in the semiconductor light emitting device shown in FIG. 1 is different
  • FIG. 21B is the shape of the cavity in the semiconductor light emitting device shown in FIG. It is sectional drawing of a different modification.
  • FIG. 22A is a cross-sectional view of a modified example in which the shape of the cavity in the semiconductor light emitting device shown in FIG. 1 is different, and FIG. 22B is the shape of the cavity in the semiconductor light emitting device shown in FIG. It is sectional drawing of a different modification.
  • FIG. 23 is a cross-sectional view of a modification in which the shape of the cavity and the structure of the fluorescent part in the semiconductor light emitting device shown in FIG. 1 are different.
  • FIG. 1 is a plan view showing the overall configuration of a semiconductor light emitting device 1 according to an embodiment of the present invention
  • FIG. 2 shows a cross-sectional view of the semiconductor light emitting device 1 along the line II-II in FIG. Note that these drawings schematically represent the semiconductor light emitting device of the present invention as an embodiment for the sake of explanation, and do not accurately represent the scale of each member.
  • the semiconductor light emitting device 1 includes a wiring board 2 and a sealing member 3 bonded to the wiring board 2.
  • a plurality of semiconductor light emitting elements 4 are mounted so as to be electrically connected to the wiring pattern of the wiring board 2.
  • the sealing member 3 has a light transmission characteristic corresponding to a light emission characteristic required for the semiconductor light emitting device 1 and a second surface which is a surface opposite to the first surface 3a and the first surface 3a.
  • the first surface 3 a is provided with a plurality of cavities 5 corresponding to the respective semiconductor light emitting elements 4 mounted on the wiring board 2.
  • Each cavity 5 is recessed with a hemispherical wall surface from the first surface 3 a of the sealing member 3, and the fluorescent portion 6 accommodated (filled) in the cavity 5 stores the semiconductor light emitting element 4. Covering.
  • the sealing member 3 includes four third surfaces 3c that are side surfaces orthogonal to the first surface 3a and the second surface 3b. Have.
  • each light emitted from each fluorescent portion is referred to as primary light
  • light emitted from the semiconductor light emitting device 1, that is, light collected from each primary light is emitted light.
  • Shall be referred to as
  • the semiconductor light emitting element 4 emits light that excites phosphors and fluorescent components (hereinafter collectively referred to as phosphors) contained in the phosphor section 6 described later, and unless the gist of the present invention is changed.
  • phosphors phosphors and fluorescent components
  • Various semiconductor light emitting elements can be used.
  • the semiconductor light emitting element 4 light having a wavelength range of 360 nm to 480 nm, that is, a light emitting light in the near ultraviolet wavelength region to the blue region can be used.
  • an ultraviolet light emitting diode element that emits ultraviolet light (emission peak wavelength: 300 to 400 nm), a violet light emitting diode element that emits violet light (emission peak wavelength: 400 to 440 nm), and a blue light emitting diode element that emits blue light (light emission).
  • a near-ultraviolet light-emitting diode element that emits near-ultraviolet light (for example, an emission peak wavelength of 380 to 400 nm) is used.
  • the integration density of the semiconductor light emitting elements 4 in the semiconductor light emitting device 1 is not particularly limited as long as the gist of the present invention is not changed, but is preferably 4 pieces / cm 2 or more, more preferably 16 pieces / cm 2 or more, The number is preferably 20 pieces / cm 2 or more, particularly preferably 25 pieces / cm 2 or more. Further, it is usually 625 pieces / cm 2 or less, preferably 400 pieces / cm 2 or less, more preferably 256 pieces / cm 2 or less.
  • the semiconductor light emitting device 1 can be downsized. can do.
  • the semiconductor light emitting elements 4 can be randomly arranged. However, from the viewpoint of high integration and control of the semiconductor light emitting elements, the semiconductor light emitting elements 4 are usually preferably arranged regularly. As shown, it is preferably arranged in a matrix. Further, the arrangement interval of the semiconductor light emitting elements 4 is determined by the arrangement interval of the cavities 5 of the sealing member 3 described later.
  • the shape of the semiconductor light emitting element 4 when projected from the light extraction surface of the semiconductor light emitting device 1, that is, the second surface 3b side of the sealing member 3, is, for example, a rectangular shape, a circular shape, or a polygonal shape. As long as the gist is not changed, an arbitrary shape can be used. However, due to the ease of processing of the substrate for the semiconductor light emitting element 4, the shape is usually rectangular or close to it.
  • the semiconductor light emitting elements 4 used in the semiconductor light emitting device 1 may all have the same shape, or each or a part thereof may have a different shape.
  • the area of the semiconductor light emitting element 4 when projected from the light extraction surface side of the semiconductor light emitting device 1 is preferably 20000 ⁇ m 2 or more, more preferably 40000 ⁇ m 2 or more, and further preferably 80000 ⁇ m 2 or more. Moreover, it is usually 360,000 ⁇ m 2 or less, preferably 250,000 ⁇ m 2 or less, and more preferably 200000 ⁇ m 2 or less.
  • the length of one side is 100 ⁇ m or more, more preferably 200 ⁇ m or more, still more preferably 250 ⁇ m or more, and particularly preferably 300 ⁇ m. That's it. Moreover, it is preferable to set it as 600 micrometers or less, More preferably, it is 500 micrometers or less, More preferably, it is 400 micrometers or less.
  • a light emitting diode hereinafter abbreviated as LED
  • a semiconductor laser diode hereinafter abbreviated as LD
  • the semiconductor light emitting element 4 is not limited to these, and various semiconductor light emitting elements can be used as long as the gist of the present invention is not changed.
  • the semiconductor light-emitting element 4 is a GaN-based LED or GaN-based LD in which a GaN-based compound semiconductor layer is formed on a light-emitting diode element substrate.
  • GaN-based LEDs and GaN-based LDs have significantly higher light emission output and external quantum efficiency than SiC-based LEDs that emit light in the same wavelength region, and are extremely bright with very low power when combined with phosphors. The reason is that light emission can be obtained. For example, for a drive current of 20 mA, GaN-based LEDs and GaN-based LDs usually have a light emission intensity that is 100 times or more that of SiC-based LEDs.
  • a GaN-based LED or GaN-based LD preferably has an Al X Ga Y N light-emitting layer, a GaN light-emitting layer, or an In X Ga Y N light-emitting layer.
  • a GaN-based LED those having an In X Ga Y N light emitting layer have a very strong emission intensity and are particularly preferable.
  • a GaN-based LD a light emitting intensity of a multi-quantum well structure composed of an In X Ga Y N layer and a GaN layer is very strong and is particularly preferable.
  • the value of X + Y is usually in the range of 0.8 to 1.2.
  • those in which these light emitting layers are doped with Zn or Si or those without a dopant are preferable for adjusting the light emission characteristics.
  • GaN-based LED it is usually possible to configure these light emitting layer, p layer, n layer, electrode, and light emitting diode element substrate as basic components.
  • a light emitting layer having a heterostructure sandwiched between an n-type and p-type Al x Ga y N layer, a GaN layer, or an In x Ga y N layer is preferable because of high luminous efficiency.
  • a structure in which the heterostructure is a quantum well structure is more preferable because of higher luminous efficiency.
  • the semiconductor light emitting device 4 used in this embodiment has an operating power of usually 5 W or less, preferably 4 W or less, more preferably 3 W or less, and usually 0.060 W or more, preferably 0. 065W or more, more preferably 0.070W or more. If the power during operation is too small, the light output generally tends to be small and disadvantageous in terms of cost. On the other hand, if the power is too large, it is difficult to dissipate heat, and the fluorescent part 6, the wiring board 2, or the semiconductor light emitting device 4 itself may be thermally deteriorated or cause a failure due to electrode migration, and the life of the semiconductor light emitting device 1 may be shortened.
  • a GaN-based LED that uses an InGaN semiconductor as a light-emitting layer and emits light in the near-ultraviolet region is used as the semiconductor light-emitting element 4.
  • the GaN-based LED is mounted on the wiring board 2 by flip-chip mounting. Do. That is, with the GaN-based LED light emitting layer facing the lower surface and the light emitting diode element substrate facing the upper surface, the two electrodes formed on the light emitting layer and the wiring pattern electrodes provided on the wiring substrate 2 are made of metal. Join through bumps.
  • a total of 36 GaN LEDs are arranged in a 1 cm 2 region on the wiring board 2 with six GaN LEDs in one horizontal row and six rows. Yes.
  • a submount when mounting the semiconductor light emitting element 4 on the wiring board 2 by flip chip mounting, a submount may be used. Further, the method for mounting the semiconductor light emitting element 4 on the wiring substrate 2 is not limited to such flip chip mounting, and an appropriate method can be selected according to the type and structure of the semiconductor light emitting element 4.
  • the semiconductor light emitting element 4 made of a conductive material is connected to the electrode on the wiring board 2 side via the light emitting element substrate, and one electrode located on the upper surface side of the semiconductor light emitting element 4 is connected to the wiring board 2 side by a metal wire. It is also possible to employ single wire bonding that connects to the electrodes. However, when the semiconductor light emitting element 4 is mounted on the wiring board 2 by flip chip mounting as in the present embodiment, the mounting area can be reduced compared to the case of wire bonding, and the density can be increased.
  • the semiconductor light emitting element 4 can be integrated.
  • Wiring board High heat dissipation board or insulating board
  • a highly heat radiating metal substrate or an insulating substrate is used as a base.
  • other materials may be appropriately used for the heat radiating metal substrate, which will be described later, or the insulating substrate.
  • the contained composite member may be used for the wiring board 2.
  • Heat dissipation metal substrate As the heat dissipating metal substrate, a heat dissipating aluminum substrate, an aluminum alloy substrate, a copper substrate, or various metal substrates such as a copper alloy substrate, or a composite substrate of various metal substrates and an insulating substrate can be used. Among these, an aluminum substrate is suitable as the base of the wiring board 2 from the viewpoints of cost, lightness, and heat dissipation. In consideration of adhesion to the sealing member 3, an aluminum substrate, an aluminum alloy substrate, a copper substrate, or a copper alloy substrate is preferable.
  • the wiring substrate 2 is formed of a metal composite substrate having a heat radiating metal substrate on which a semiconductor light emitting element 4 as a light source is mounted and an electric wiring substrate on which electric wiring to the semiconductor light emitting element 4 is formed.
  • the metal composite substrate is particularly limited as long as it has such a heat dissipation metal substrate and an electric wiring substrate and a light source mounting surface of the heat dissipation metal substrate is provided with a noble metal plating film. is not.
  • a noble metal plating film on the light source mounting surface of the heat radiating metal substrate and mounting the semiconductor light emitting element 4 as the light source on the noble metal plating film, it is possible to ensure high bonding strength.
  • epoxy and silicone resin adhesives and silver paste have been used to mount light sources. By mounting a light source using a precious metal plating film in this way, In the reliability evaluation test such as the impact test and the actual use, it is possible to satisfactorily suppress the occurrence of defects such as peeling of the bonding interface.
  • a known method can be adopted as a method for mounting the semiconductor light-emitting element 4 that is a light source.
  • the semiconductor light emitting element 4 side is plated to form a joining surface, and a die bonding material such as epoxy resin or silicone resin is used to join the noble metal plating film formed on the light source mounting surface of the heat dissipation metal substrate.
  • the semiconductor light emitting element 4 may be mounted.
  • the semiconductor light emitting element 4 can also be mounted by using AuSn paste, AgSn paste, or the like and bonding it to a noble metal plating film formed on the light source mounting surface of the heat dissipation metal substrate. If AuSn paste is used, bonding can be performed by metal diffusion bonding, so that high bonding reliability can be ensured. Further, since the semiconductor light emitting element 4 can be mounted on the heat dissipation metal substrate by metal bonding, considerably better heat dissipation can be expected than when mounting using the die bonding material as described above.
  • the insulating substrate for example, a substrate formed using a material selected from ceramic, resin, glass epoxy, composite resin containing a filler in the resin, and the like can be used.
  • the insulating substrate has good thermal conductivity.
  • a ceramic substrate such as alumina or aluminum nitride, or a composite resin substrate containing a filler having high thermal conductivity is suitable.
  • the wiring board 2 is formed in a flat plate shape as a whole.
  • the semiconductor light emitting element 4 is provided at the mounting position of the semiconductor light emitting element 4 on the surface on which the semiconductor light emitting element 4 is mounted.
  • a recess 2a is formed so as to surround the semiconductor light emitting element 4, and each semiconductor light emitting element 4 is mounted in the recess 2a.
  • the concave portion 2a is used to accommodate the fluorescent portion 6 overflowing from the cavity 5 when the wiring board 2 and the sealing member 3 described later are joined.
  • the concave portion 2a is not essential and is provided as necessary.
  • the fluorescent portion 6 does not overflow from the cavity 5, or when the fluorescent portion 6 overflows is accommodated by another means. In such a case, it is not necessary to provide the recess 2a.
  • the shape and position of the recess 2a are not limited to those of the present embodiment.
  • an annular groove surrounding the semiconductor light emitting element 4 or a recess formed close to the semiconductor light emitting element 4 can be used.
  • various modifications can be made and any fluorescent part 6 overflowing from the cavity 5 can be accommodated.
  • the shape of the wiring board 2 does not necessarily need to be flat, and may be a shape that can be appropriately joined to the sealing member 3 described later.
  • the wiring board 2 itself can be formed to have a curved shape according to this.
  • a step or a protrusion may be provided on the surface of the wiring board 2.
  • a reflecting member for reflecting light emitted from the semiconductor light emitting element 4 may be formed at least around each semiconductor light emitting element 4.
  • a reflecting member is not particularly limited in its formation position and shape as long as the gist of the present invention is not changed.
  • the reflecting member may be, for example, a layer made of a metal printed on the wiring board 2 at the same time as a wiring pattern to be described later, such as a metal such as ceramic, silver, aluminum, kovar, silver-platinum, silver-palladium.
  • a layer made of an alloy such as a white solder resist may be used.
  • a wiring pattern for supplying power to each semiconductor light emitting element 4 to control light emission of each semiconductor light emitting element 4 is provided corresponding to the electric circuit configuration of the semiconductor light emitting device 1.
  • the electrical circuit configuration of the semiconductor light emitting device 1 will be specifically described in the section “5. Configuration of the semiconductor light emitting device”.
  • the wiring pattern is not particularly limited as long as the electrical circuit configuration of the semiconductor light emitting device 1 is realized, and is appropriately selected according to the type and purpose of the semiconductor light emitting device 1, the mounting method of the semiconductor light emitting element 4, and the like.
  • the wiring pattern when the semiconductor light emitting element 4 is flip-chip mounted as in the present embodiment is configured by a pad pattern, a power feeding land pattern, and a conductive line pattern that connects them.
  • the power feeding land pattern is usually formed outside the region where the semiconductor light emitting element 4 is mounted, and is electrically connected to an external power source or a controller and used to receive power controlled by the controller. Also, a plurality of pad patterns are provided corresponding to the plurality of semiconductor light emitting elements 4, and are electrically connected to the electrodes on the semiconductor light emitting element 4 side through metal bumps. Further, the power feeding land pattern and the pad pattern are electrically connected via a conductive wire pattern to constitute an electric circuit of the semiconductor light emitting device 1.
  • the wiring pattern can be formed on only one surface such as the surface of the wiring substrate 2.
  • the semiconductor light emitting elements 4 are arranged in a matrix, In the case where a plurality of types of primary light is obtained using a plurality of types of fluorescent portions 6, a multilayer wiring pattern can be employed.
  • the material used for the wiring pattern provided on the surface of the wiring board 2 is preferably a material having a high reflectance with respect to light, and in the case of this embodiment, the reflectance of near ultraviolet light is preferably 70% or more. Preferably it is 75% or more, More preferably, it is 80% or more.
  • the luminance of the semiconductor light emitting device can be improved.
  • a material for the wiring pattern there are usually gold, silver, copper, aluminum and the like. Among them, gold, silver, and copper are preferable from the viewpoint that it is easy to obtain a luminance improvement effect and a luminance maintenance effect.
  • One type of these materials may be used for the wiring pattern, or two or more types may be used in combination.
  • the water vapor of the wiring board 2 is prevented from entering the area surrounded by the wiring board 2 and the sealing member 3 (that is, the cavity 5 and the fluorescent portion 6) from the outside of the semiconductor light emitting device 1 from the outside. It is preferable to adjust the permeability, water vapor permeability coefficient, oxygen permeability, and oxygen permeability coefficient as follows. Specifically, when measured at 23 ° C. by the JISK7129B method, the water vapor permeability of the wiring board 2 is preferably 10 g / m 2 ⁇ day or less, and more preferably 5 / m 2 ⁇ day or less. It is preferably 2 / m 2 ⁇ day or less. Further, when measured at 23 ° C.
  • the water vapor transmission coefficient of the wiring board 2 is preferably 10 g ⁇ mm / m 2 ⁇ day or less, and preferably 5 g ⁇ mm / m 2 ⁇ day or less. More preferably, it is 2 g ⁇ mm / m 2 ⁇ day or less.
  • the oxygen permeability of the wiring board 2 is preferably 1000 cm 3 / m 2 ⁇ day ⁇ atm or less, and 500 cm 3 / m 2 ⁇ day ⁇ atm. More preferably, it is 200 cm ⁇ 3 > / m ⁇ 2 > * day * atm or less.
  • the oxygen transmission coefficient of the wiring board 2 is preferably 1000 cm 3 ⁇ mm / m 2 ⁇ day ⁇ atm or less, preferably 100 cm 3 ⁇ mm / m 2. More preferably, it is not more than day ⁇ atm, and particularly preferably not more than 10 cm 3 ⁇ mm / m 2 ⁇ day ⁇ atm.
  • the wiring board 2 prevents the external gas such as water vapor or oxygen from entering the region surrounded by the wiring board 2 and the sealing member 3 (that is, the cavity 5 and the fluorescent portion 6) from the outside of the semiconductor light emitting device 1. It is preferable to adjust the thickness as follows. Specifically, the thickness of the wiring board 2 is preferably 0.2 mm or more, more preferably 0.5 mm or more, and particularly preferably 1.0 mm or more. Note that the thickness of the wiring board 2 is preferably 10 mm or less from the viewpoint of weight reduction and compactness of the semiconductor light emitting device.
  • the fluorescent part 6 is composed of a phosphor that converts the wavelength of at least a part of light emitted from the semiconductor light emitting element 4 and a filler for dispersing and holding the phosphor.
  • the sealing member By covering the semiconductor light emitting element 4 that is accommodated in each of the plurality of cavities 5 that are recessed in the first surface 3 a and mounted on the wiring board 2 corresponding to each cavity 5, The phosphors dispersed and contained are dispersed around the semiconductor light emitting element 4.
  • the type of phosphor contained in each fluorescent part 6 can be appropriately selected according to the light emission characteristics required for the semiconductor light emitting device 1.
  • Each cavity 5 may contain a fluorescent portion 6 containing a single type of phosphor, or may contain a fluorescent portion 6 containing a mixture of a plurality of types of phosphors. It may be.
  • Each of the cavities 5 preferably contains (fills) a fluorescent portion so that there is no gap. As a result, the number of reflections at the interface can be reduced, so that the light subjected to wavelength conversion by the semiconductor light emitting element 4 and the fluorescent part 6 can be efficiently extracted outside the semiconductor light emitting device 1.
  • the primary light from some of the fluorescent parts 6 is different from the primary light from the remaining fluorescent parts 6, for example, when the light emitted from the semiconductor light emitting element 4 is ultraviolet light or violet light.
  • three types of phosphors that is, a phosphor, a green phosphor, and a blue phosphor
  • three primary colors of RGB red, green, and blue
  • the wavelength of the yellow light is converted into Y (yellow), and the blue light of the semiconductor light emitting element 4 having a complementary color relationship, the wavelength converted yellow light, As a result, white light having various color temperatures can be obtained.
  • the blue light emitted from the semiconductor light emitting element 4 is wavelength-converted to RG (red and green) by the red phosphor and the green phosphor, and the blue light of the semiconductor light emitting element 4 and the wavelength-converted red light and By synthesizing and mixing green light, white light having various color temperatures can be obtained as emitted light.
  • the light emitted from the semiconductor light emitting element 4 is blue light, it is possible to obtain emitted light of a color other than white light by adjusting the selection of phosphors, the combination ratio, or the color mixture. Even in such a case, since primary light having a wide spectrum width can be obtained from the fluorescent portion 6, excellent color rendering can be ensured for the emitted light of the semiconductor light emitting device 1.
  • the phosphor is not particularly limited as long as at least a part of the light emitted from the semiconductor light emitting element 4 can be wavelength-converted.
  • the semiconductor light emitting element 4 that emits light in the near ultraviolet region as described above. Therefore, a phosphor capable of converting the wavelength of at least part of light in such a wavelength region is used.
  • the base crystal (Ca , Sr) Metal nitrides typified by AlSiN 3 and the like, phosphates typified by Ca 5 (PO 4 ) 3 Cl and the like and sulfides typified by ZnS, SrS and CaS, or Y 2 O 2 S , Oxysulfides represented by La 2 O 2 S, and the like, ions of rare earth metals such as Ce, Pr, Nd, Pm, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb, Ag, A combination of metal ions such as Cu, Au, Al, Mn, and Sb as activators or coactivators is preferred. Preferred examples of the host crystal are shown in Table 1.
  • the element composition for these base crystals and the activator element or coactivator element there is no particular limitation on the element composition for these base crystals and the activator element or coactivator element, and it is possible to partially replace the elements of the same family.
  • the obtained phosphor is What is necessary is just to convert the wavelength of light in the wavelength range of the near ultraviolet region as described above.
  • phosphors that differ only in part of the structure are omitted as appropriate, and the omitted parts are shown separated by commas (,).
  • commas For example, “Y 2 SiO 5 : Ce 3+ ”, “Y 2 SiO 5 : Tb 3+ ” and “Y 2 SiO 5 : Ce 3+ , Tb 3+ ” are changed to “Y 2 SiO 5 : Ce 3+ , Tb 3+ ”, “La 2 O 2 S: Eu”, “Y 2 O 2 S: Eu” and “(La, Y) 2 O 2 S: Eu” are collectively shown as “(La, Y) 2 O 2 S: Eu”. ing.
  • the following phosphors can be used, but these are merely examples, and phosphors that can be used in the present invention are not limited thereto. In the following examples, as described above, phosphors that are different only in part of the structure are appropriately omitted.
  • Red phosphor As long as the gist of the present invention is not changed, any red phosphor can be used, but the emission peak wavelength is usually 570 nm or more, preferably 580 nm or more, more preferably 585 nm or more, and usually 780 nm or less. Those having a wavelength range of preferably 700 nm or less, more preferably 680 nm or less are suitable.
  • red phosphor for example, (Ca, Sr, Ba) 2 Si 5 (N, O) 8 : Eu, (Ca, Sr, Ba) Si (N, O) 2 : Eu, (Ca, Sr, Ba) ) AlSi (N, O) 3 : Eu, (Sr, Ba) 3 SiO 5 : Eu, (Ca, Sr) S: Eu, (La, Y) 2 O 2 S: Eu, Eu (dibenzoylmethane) 3 ⁇ -diketone Eu complex such as 1,10-phenanthroline complex, carboxylic acid Eu complex, K 2 SiF 6 : Mn is preferable, (Ca, Sr, Ba) 2 Si 5 (N, O) 8 : Eu, (Sr, Ca) AlSi (N, O): Eu, (La, Y) 2 O 2 S: Eu, K 2 SiF 6 : Mn are more preferable.
  • any orange phosphor can be used, but the emission peak wavelength is 580 nm or more, preferably 585 nm or more, and 620 nm or less, preferably 600 nm or less. Those in the range are preferred.
  • (Sr, Ba) 3 SiO 5 : Eu, (Sr, Ba) 2 SiO 4 : Eu, (Ca, Sr, Ba) 2 Si 5 (N, O) 8 : Eu, ( Ca, Sr, Ba) AlSi (N, O) 3 : Ce and the like are preferable.
  • the emission peak wavelength is usually 420 nm or more, preferably 430 nm or more, more preferably 440 nm or more, usually less than 500 nm, Those having a wavelength range of preferably 490 nm or less, more preferably 480 nm or less, further preferably 470 nm or less, and particularly preferably 460 nm or less are suitable.
  • (Ca, Sr, Ba) MgAl 10 O 17 : Eu, (Sr, Ca, Ba, Mg) 10 (PO 4 ) 6 (Cl, F) 2 : Eu, (Ba, Ca , Mg, Sr) 2 SiO 4 : Eu, (Ba, Ca, Sr) 3 MgSi 2 O 8 : Eu and the like are preferable, and (Ba, Sr) MgAl 10 O 17 : Eu, (Ca, Sr, Ba) 10 ( PO 4 ) 6 (Cl, F) 2 : Eu and Ba 3 MgSi 2 O 8 : Eu are more preferable, and Sr 10 (PO 4 ) 6 Cl 2 : Eu and BaMgAl 10 O 17 : Eu are particularly preferable.
  • Green phosphor As long as the gist of the present invention is not changed, any green phosphor can be used, but the emission peak wavelength is usually 500 nm or more, preferably 510 nm or more, more preferably 515 nm or more, usually less than 550 nm, Those having a wavelength range of preferably 542 nm or less, more preferably 535 nm or less are suitable. If the emission peak wavelength of the green phosphor is too short, the light emitted from the green phosphor tends to be bluish, while if the emission peak wavelength is too long, it tends to be yellowish. There is a risk that the characteristics will deteriorate.
  • the green phosphor for example, Y 3 (Al, Ga) 5 O 12 : Ce, CaSc 2 O 4 : Ce, Ca 3 (Sc, Mg) 2 Si 3 O 12 : Ce, (Sr, Ba) 2 SiO 4 : Eu, (Si, Al) 6 (O, N) 8 : Eu ( ⁇ sialon), (Ba, Sr) 3 Si 6 O 12 : N 2 : Eu, SrGa 2 S 4 : Eu, BaMgAl 10 O 17 : Eu, Mn and the like are preferable.
  • the emission peak wavelength is usually 530 nm or more, preferably 540 nm or more, more preferably 550 nm or more, and usually 620 nm or less. Those having a wavelength range of preferably 600 nm or less, more preferably 580 nm or less are suitable.
  • Y 3 Al 5 O 12 Ce
  • (Y, Gd) 3 Al 5 O 12 Ce
  • (Sr, Ca, Ba, Mg) 2 SiO 4 Eu
  • (Ca, Sr) Si 2 N 2 O 2 : Eu or the like is preferable.
  • RGB red, green and blue
  • a plurality of cavities 5 formed in the sealing member 3 are divided into a cavity 5 that houses a fluorescent part 6 containing a red phosphor, a cavity 5 that contains a fluorescent part 6 containing a green phosphor, and blue fluorescence. If these are divided into the cavities 5 that contain the fluorescent parts 6 containing the body and these are dispersedly arranged, the primary lights emitted from the respective fluorescent parts 6 are combined to produce various colors as well as white. Can be obtained at various color temperatures.
  • each cavity 5 accommodates a fluorescent portion 6 containing a mixture of three types of phosphors, a red phosphor, a green phosphor, and a blue phosphor, and a part of the plurality of cavities 5.
  • the ratio of the red phosphor, the green phosphor and the blue phosphor contained in the fluorescent part 6 accommodated in the cavity 5, and the red phosphor and the green fluorescence contained in the fluorescent part 6 accommodated in the remaining cavity 5 By adjusting the ratio of the body and the blue phosphor, it is possible to obtain white light having two different color temperatures.
  • the phosphor contained in the fluorescent part 6 preferably has a particle size such that light emitted from the semiconductor light emitting element 4 can be sufficiently scattered in the fluorescent part 6, but the particle size of the phosphor is particularly limited.
  • the median particle size (D50) is usually 0.1 ⁇ m or more, preferably 2 ⁇ m or more, more preferably 5 ⁇ m or more, and usually 100 ⁇ m or less, preferably 50 ⁇ m or less, more preferably 20 ⁇ m or less. is there. When the median particle diameter (D50) of the phosphor is in such a range, the light emitted from the semiconductor light emitting element 4 is sufficiently scattered in the fluorescent portion 6.
  • the wavelength conversion by the phosphor is efficiently performed.
  • the light emitted from the semiconductor light emitting element 4 is sufficiently scattered in the fluorescent part 6, so that each type of fluorescent substance is The light is absorbed uniformly and the light emitted from the phosphor is also scattered well in the fluorescent portion 6, so that the light emitted from the phosphor is well synthesized.
  • the median particle diameter (D50) of the phosphor contained in the fluorescent part 6 is larger than the above range, not only the light emitted from the semiconductor light emitting element 4 is not sufficiently scattered in the fluorescent part 6, but also the phosphor Since the inside of the fluorescent part 6 cannot be sufficiently filled, the light emitted from the semiconductor light emitting element 4 is not sufficiently absorbed by the phosphor, and there is a possibility that wavelength conversion by the phosphor is not performed efficiently.
  • the median particle diameter (D50) of the phosphor contained in the fluorescent part 6 is smaller than the above range, the luminous efficiency of the phosphor is lowered, and the illuminance may be lowered.
  • the particle size distribution (QD) of the phosphor is preferably smaller in order to align the dispersed state of the particles in the fluorescent part 6, but in order to reduce the particle size, the classification yield is lowered and the cost is increased. It is 0.03 or more, preferably 0.05 or more, more preferably 0.07 or more, and is usually 0.4 or less, preferably 0.3 or less, more preferably 0.2 or less.
  • the concentration of the phosphor in the fluorescent portion 6 is set in a range in which light emitted from the semiconductor light emitting element is sufficiently absorbed and concentration quenching does not occur.
  • the concentration of the phosphor in the fluorescent part 6 can be arbitrarily set as long as the gist of the present invention is not changed. For example, it is usually 5% by weight or more, preferably 6% by weight or more, more preferably 7% by weight or more. In addition, it is usually 90% by weight or less, preferably 70% by weight or less, more preferably 40% by weight or less, still more preferably 25% by weight or less, and particularly preferably 20% by weight or less.
  • the filler that forms the fluorescent part 6 by being mixed with the phosphor and dispersing and holding the phosphor is not particularly limited, but the phosphor can be well dispersed and held.
  • a curable material any of an inorganic material, an organic material, and a mixture of both can be used.
  • the inorganic material for example, a solution obtained by hydrolyzing a solution containing a metal alkoxide, a ceramic precursor polymer or a metal alkoxide by a sol-gel method, or a combination thereof, an inorganic material (for example, a siloxane bond). Inorganic material).
  • examples of the organic material include a thermosetting resin and a photocurable resin (UV curable resin).
  • a thermosetting resin such as poly (meth) methyl acrylate, styrene resins such as polystyrene and styrene-acrylonitrile copolymers, polycarbonate resins, polyester resins, phenoxy resins, butyral resins, polyvinyl alcohol, ethyl cellulose, Examples thereof include cellulose resins such as cellulose acetate and cellulose acetate butyrate, epoxy resins, phenol resins, and silicone resins.
  • the silicon-containing compound is a compound having a silicon atom in the molecule, organic materials such as polyorganosiloxane (silicone-based material), inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride, and borosilicate and phosphosilicate. There are glass materials such as acid salts and alkali silicates. These can be used alone or in combination of two or more in any ratio and combination.
  • a silicone-based material is preferable from the viewpoints of transparency, adhesiveness, ease of handling, and a cured product having stress relaxation force.
  • silicone resins for semiconductor light emitting devices for example, Japanese Patent Application Laid-Open No. 10-228249, Japanese Patent No. 2927279, and Japanese Patent Application Laid-Open No. 2001-36147 show use as fillers. Yes.
  • the filler preferably has a light transmittance of 80% or more in a wavelength region of 350 nm to 500 nm when the film thickness is 1 mm, more preferably 85% or more, Usually, it is 98% or less.
  • the sealing member 3 is formed in a plate shape having the first surface 3a and the second surface 3b, and transmits the primary light emitted from each fluorescent part 6 to the second. It has a light transmission characteristic radiated from the surface 3b.
  • the material of the sealing member 3 is not particularly limited as long as it has such light transmission characteristics.
  • glass acrylic resin, epoxy resin, urethane resin, fluorine resin, silicone resin, quartz, And one or more materials selected from the group consisting of ceramics can be used.
  • glass is used as the material of the sealing member 3 in consideration of the primary light transmittance and excellent durability.
  • the sealing member 3 is made of, for example, an acrylic resin (for example, Acrysil Wrap manufactured by Mitsubishi Rayon Co., Ltd.), an epoxy resin (for example, two-pack type epoxy resin YL7301 manufactured by Japan Epoxy Resin Co., Ltd., Mitsubishi Gas Chemical).
  • a two-pack type epoxy resin Maxive manufactured by Shin-Etsu Chemical Co., Ltd. an organically modified silicone resin (for example, SCR-1012 manufactured by Shin-Etsu Chemical Co., Ltd.), a fluororesin (for example, a fluororesin Eight Seal 3000 manufactured by Taihei Kasei Co., Ltd.) and the like are preferable.
  • glass is suitable from the viewpoint of gas barrier properties.
  • the light transmittance in the wavelength region of 350 nm to 500 nm is preferably 80% or more, more preferably 85% or more. Usually, it is 98% or less. If the sealing member 3 can satisfy the following water vapor permeability, water vapor permeability coefficient, oxygen permeability, or oxygen permeability coefficient as a whole, a composite material in which another material is appropriately contained in the above-described specific material is sealed. It may be used for the stop member 3.
  • the hardness of the sealing member 3 for example, Shore D in JISK7215 (1986) is preferably 20 or more, more preferably 40, and further preferably 60.
  • the sealing member 3 having a certain hardness is easier to handle, is less likely to deform the sealing member 3, is preferable for protecting the fluorescent part inside the recessed cavity, and has a constant cavity capacity. It is possible to prevent the color deviation of the semiconductor light emitting device from occurring as a result, or to facilitate the handling of the sealing member in the manufacturing process.
  • the sealing member 3 is configured so that an external gas such as water vapor or oxygen does not enter the region surrounded by the wiring substrate 2 and the sealing member 3 (that is, the cavity 5 and the fluorescent portion 6) from the outside of the semiconductor light emitting device 1. It is preferable to adjust the water vapor permeability, water vapor permeability coefficient, oxygen permeability, and oxygen permeability coefficient as follows. Specifically, when measured at 23 ° C. by the JISK7129B method, the water vapor permeability of the sealing member 3 is preferably 10 g / m 2 ⁇ day or less, and preferably 5 / m 2 ⁇ day or less. More preferred is 2 / m 2 ⁇ day or less.
  • the water vapor transmission coefficient of the sealing member 3 is preferably 10 g ⁇ mm / m 2 ⁇ day or less, and preferably 5 g ⁇ mm / m 2 ⁇ day or less. Is more preferable, and 2 g ⁇ mm / m 2 ⁇ day or less is particularly preferable.
  • the oxygen permeability of the sealing member 3 is preferably 1000 cm 3 / m 2 ⁇ day ⁇ atm or less, and 500 cm 3 / m 2 ⁇ day ⁇ . It is more preferably at most atm, and particularly preferably at most 200 cm 3 / m 2 ⁇ day ⁇ atm.
  • the oxygen transmission coefficient of the sealing member 3 is preferably 1000 cm 3 ⁇ mm / m 2 ⁇ day ⁇ atm or less, preferably 100 cm 3 ⁇ mm / m. more preferably 2 ⁇ day ⁇ atm or less, particularly preferably not more than 10cm 3 ⁇ mm / m 2 ⁇ day ⁇ atm.
  • the sealing member prevents the external gas such as water vapor or oxygen from entering the region surrounded by the wiring substrate 2 and the sealing member 3 (that is, the cavity 5 and the fluorescent portion 6) from the outside of the semiconductor light emitting device 1. It is preferable to adjust the thickness of 3 as follows. Specifically, the thickness of the sealing member 3 is preferably 0.2 mm or more, more preferably 0.5 mm or more, and particularly preferably 1.0 mm or more. In addition, it is preferable that the thickness of the sealing member 3 is 10 mm or less from a viewpoint of weight reduction and compactization of a semiconductor light-emitting device.
  • the primary light emitted from the fluorescent part 6 is at least partially scattered in the sealing member 3, when a plurality of types of fluorescent parts 6 having different primary lights are used, The primary light is well synthesized and high quality outgoing light with no unevenness can be obtained. Therefore, an additive that promotes the scattering of primary light may be added to the sealing member 3 as necessary, and the primary light scattering in the sealing member 3 may be added to the second surface 3b of the sealing member 3. Or may be subjected to a surface treatment that promotes emission to the outside. In addition, with respect to the four third surfaces 3 c that are the side surfaces of the sealing member 3, light emitted from the fluorescent portions 6 and the semiconductor light emitting elements 4 are emitted in order to prevent leakage of light from within the sealing member 3.
  • FIGS. 3 to 8 are perspective views showing the sealing member 3 in which the above-described surface treatment is performed on the third surface 3b. All of them schematically represent the surface treatment, and the scale and the like are accurately shown. Not shown in
  • FIG. 3 is a perspective view showing an example of the sealing member 3 in which the second surface 3b is a rough surface on which fine irregularities are formed.
  • FIG. 4 is a perspective view showing an example of the sealing member 3 in which a V-groove / triangular prism shape is provided on the second surface 3b instead of such a rough surface.
  • V-groove / triangular prism shape is provided on the second surface 3b instead of such a rough surface.
  • prism-shaped ridges 3d and V-grooves having a triangular cross section are alternately arranged in parallel. I am doing. Note that the extending direction, size, and number of V-grooves and prismatic ridges are not limited to those shown in FIG.
  • the optical characteristics of the sealing member 3 can set suitably according to the light emission characteristic from the fluorescence part 6, etc.
  • the sizes of the ridges 3d and the V-grooves may be different from each other, and the distribution of the ridges 3d and the V-grooves having different sizes may be different from each other in terms of light emission characteristics and sealing required for the semiconductor light emitting device 2. It is also possible to set appropriately according to the optical characteristics of the member 3 or the light emission characteristics from the fluorescent part 6.
  • FIG. 5 is a perspective view showing an example of the sealing member 3 in which a cylindrical prism shape is applied to the second surface 3b instead of such a V-groove / triangular prism shape.
  • a plurality of prismatic collars 3e having a semicircular cross section are formed in parallel. Note that the extending direction, size, and number of prism-shaped ridges 3e having a semicircular cross-section are not limited to the example of FIG. 5, but the light-emitting characteristics required for the semiconductor light-emitting device 2 and the sealing member 3 Can be set as appropriate according to the optical characteristics of the light-emitting element or the light-emitting characteristics from the fluorescent part 6.
  • the sizes of the ridges 3e can be different from each other, and the distribution of the ridges 3e having different sizes can be determined by the light emission characteristics required for the semiconductor light emitting device 2 and the optical characteristics of the sealing member 3. Alternatively, it may be set as appropriate according to the light emission characteristics from the fluorescent part 6.
  • FIG. 6 is a perspective view showing an example of the sealing member 3 in which a plurality of Fresnel lenses 3f are formed on the second surface 3b.
  • the same Fresnel lens is formed at a position facing the cavity 5 formed on the first surface 3 a of the sealing member 3.
  • the number, position, size, optical characteristics, and the like of the Fresnel lens are not limited to the example shown in FIG. 6, but the light emission characteristics required for the semiconductor light emitting device 2, the optical characteristics of the sealing member 3, or the fluorescent part. 6 can be set as appropriate in accordance with the light emission characteristics from 6.
  • a convex lens or a concave lens may be formed.
  • the number, position, size, optical characteristics, etc. of the convex lens or concave lens depend on the light emission characteristics required for the semiconductor light emitting device 2, the optical characteristics of the sealing member 3, or the light emission characteristics from the fluorescent part 6. Can be set as appropriate.
  • FIG. 7 is a perspective view showing an example of the sealing member 3 in which a plurality of pyramidal protrusions 3g are formed on the second surface 3b.
  • the pyramid pyramid protrusions having the same shape are used.
  • 3g is regularly arranged.
  • the pyramid is not limited to a quadrangular pyramid, and may be a triangular pyramid, a hexagonal pyramid, or a cone. Further, the number, position, size, etc. of the pyramids are not limited to the example of FIG. 7, and the light emission characteristics required for the semiconductor light emitting device 2, the optical characteristics of the sealing member 3, or the light emission from the fluorescent part 6 It can be set as appropriate according to the characteristics.
  • the respective pyramids can be made different without being the same, and the distribution of the different pyramids can be determined based on the light emission characteristics required for the semiconductor light emitting device 2, the optical characteristics of the sealing member 3, or the light emission from the fluorescent portion 6. It is also possible to set appropriately according to the characteristics.
  • FIG. 8 is a perspective view showing an example of the sealing member 3 in which a plurality of hemispherical convex portions 3h are formed on the second surface 3b instead of the pyramidal convex portions, and the example in FIG. 8 has the same shape.
  • the hemispherical protrusions 3h are regularly arranged.
  • the number, position, size, and the like of the hemispherical protrusions 3 h are not limited to the example of FIG. 8, and the light emission characteristics required for the semiconductor light emitting device 2, the optical characteristics of the sealing member 3, or the fluorescent part 6 It can be set as appropriate according to the emission characteristics of the light.
  • the respective hemispherical protrusions 3h can be made different without being the same, and the distribution of the different hemispherical protrusions 3h can be determined by the light emission characteristics required for the semiconductor light emitting device 2 and the optical characteristics of the sealing member 3. Alternatively, it may be set as appropriate according to the light emission characteristics from the fluorescent part 6.
  • the second surface 3b of the sealing member 3 may be subjected to various surface treatments in order to promote the scattering of the primary light in the sealing member 3 or to promote the emission to the outside.
  • the form of the surface treatment mentioned above is an example, Surface treatment is not limited to these, Moreover, it is also possible to apply to the 2nd surface 3b of the sealing member 3 combining several surface treatment mentioned above. It is.
  • cavities 5 are provided for each semiconductor light emitting element 4 at positions corresponding to the semiconductor light emitting elements 4 mounted on the wiring substrate 2. It is recessed. Accordingly, in the present embodiment, the cavities 5 correspond to the semiconductor light emitting elements 4 arranged in a matrix on the wiring board 2 and are arranged in a matrix as shown in FIG.
  • the interval between the adjacent cavities 5 can be arbitrarily set as long as the gist of the present invention is not changed, but is separated to such an extent that the influence of light emission from the semiconductor light emitting element 4 in the opposite cavity 5 can be suppressed. It is preferable. Thereby, improvement of light extraction efficiency is expected. Specifically, it is 50 ⁇ m or more, preferably 100 ⁇ m or more, and more preferably 200 ⁇ m or more. From the viewpoint of integration or synthesis of primary light, it is preferably 1.5 mm or less.
  • the opening area and depth of the cavity 5 are not particularly limited as long as the gist of the present invention is not changed, and can usually be appropriately determined according to the size of the semiconductor light emitting element 4.
  • the opening area is preferably 5 mm 2 or less, more preferably 1 mm 2 or less, and still more preferably 0.25 mm 2 or less. With such an opening area, the semiconductor light emitting element 4 can be highly integrated and a large luminous flux can be obtained.
  • the depth of the cavity 5 is, for example, usually 200 ⁇ m or more, preferably 250 ⁇ m or more, more preferably 300 ⁇ m or more, and usually 3000 ⁇ m or less, preferably 2000 ⁇ m or less, more preferably 1500 ⁇ m or less. Thereby, the wavelength of the light emitted from the semiconductor light emitting element 4 can be changed efficiently.
  • Each cavity 5 is recessed in a hemispherical shape from the first surface 3a of the sealing member 3, and when the sealing member 3 is joined to the wiring substrate 2, as shown in FIG.
  • Each of the upper semiconductor light emitting elements 4 is positioned inside the corresponding cavity 5.
  • each cavity 5 contains a fluorescent portion 6 containing a phosphor as described above, and each of the semiconductor light emitting elements 4 on the wiring board 2 is joined by the bonding of the sealing member 3 and the wiring board 2.
  • the phosphors contained in the fluorescent part 6 are present around the semiconductor light emitting element 4 by being covered with the fluorescent part 6 accommodated in the corresponding cavity 5.
  • the cavities 5 are formed to have the same size.
  • the sizes of the cavities 5 are not necessarily the same, and the wall surface shape of the cavities 5 is also limited to a hemispherical shape as in the present embodiment. Is not to be done. That is, the size and shape of the cavity 5 can be appropriately selected according to the light emission characteristics required for the semiconductor light emitting device 1, the type and characteristics of the fluorescent portion 6 to be accommodated, the characteristics of the semiconductor light emitting element 4, and the like.
  • the cavity 5 can be formed by using a method such as wet etching, dry etching, laser beam irradiation, sand blasting, grinding, or the like. For a specific forming method in this embodiment, refer to “6. This will be described in the section “Method for Manufacturing Semiconductor Light Emitting Device”.
  • the semiconductor light emitting element 4 It is preferable to add a function as an optical filter to the sealing member 3 by applying a coating that suppresses transmission of emitted light.
  • the function of the sealing member 3 is higher than the light emitted from the semiconductor light emitting element 4 than the light whose wavelength is converted by the phosphor contained in the fluorescent part 6 accommodated in the cavity 5. It is obtained by forming a coating layer 7 having a rate.
  • the coating layer 7 is formed of an interference film made of a multilayer dielectric laminated film in which a plurality of high refractive index layers and low refractive index layers are alternately laminated. Specifically, for example, by laminating a thin film made of TiO 2 as a high refractive index layer and a thin film made of SiO 2 as a low refractive index layer alternately in the cavity 5 by vapor deposition or sputtering (for example, respectively) Such a coating layer 7 is formed over the entire wall surface of the cavity 5.
  • the coating layer 7 thus formed has a transmittance of 90% or more for visible light in a wavelength region longer than light in the near ultraviolet region, and has a reflectance of 90% or more for light in the near ultraviolet region. .
  • the near-ultraviolet light emitted from the semiconductor light emitting element 4 is partly wavelength-converted by the phosphor contained in the fluorescent part 6, and the near-ultraviolet light is emitted.
  • the visible light in the wavelength region longer than the light in the region reaches the coating layer 7 of the cavity 5, and the remaining near-ultraviolet light reaches the coating layer 7 without being wavelength-converted by the phosphor.
  • the coating layer 7 has a higher reflectance than the visible light obtained by converting the wavelength of the near-ultraviolet light emitted from the semiconductor light-emitting element 4 with a phosphor.
  • the coating layer 7 As a result, compared to the case where the coating layer 7 is not provided, the amount of visible light that is wavelength-converted by the phosphor and emitted from the semiconductor light-emitting device 1 is increased, and the semiconductor light-emitting device is not wavelength-converted by the phosphor. The amount of near-ultraviolet light emitted from 1 can be reduced.
  • the coating layer 7 can be formed on the second surface 3b of the sealing member 3 instead of being formed on the wall surface of the cavity 5 as in the present embodiment.
  • near-ultraviolet light that has traveled through the sealing member 3 and reached the coating layer 7 without being wavelength-converted by the phosphor is scattered within the sealing member 3. Therefore, it does not necessarily return to the cavity 5 corresponding to the semiconductor light emitting element 4 that is the source of the generation, and may return to the cavity 5 corresponding to another semiconductor light emitting element 4. For this reason, when the phosphor contained in the fluorescent part 6 differs depending on the cavity 5, there is a possibility that the desired characteristic of the emitted light cannot be obtained with high accuracy.
  • the coating layer 7 may be formed on the flat second surface 3b, it is easier to form the coating layer 7 than when coating the wall surface of the hemispherical cavity 5. Accordingly, such a coating layer 7 has a case where the fluorescent parts 6 containing the same fluorescent substance are accommodated in the respective cavities 5 rather than the case where the fluorescent substance contained in the fluorescent part 6 differs depending on the cavity 5. Is suitable.
  • the configuration and material of the coating layer 7 are not limited to those described above, and any coating material having the same function can be applied.
  • the wavelength region of light emitted from the semiconductor light emitting element 4 and the fluorescence What is necessary is just to select suitably according to the wavelength range etc. of the light obtained by the wavelength conversion by a body.
  • the coating layer 7 is formed on the entire wall surface of the cavity 5, but the coating layer 7 may be formed only on a part of the wall surface of the cavity 5, or the wall surface of the cavity 5 may be formed.
  • the coating layer 7 may be formed on the entire first surface 3 a of the sealing member 3.
  • the main body of the sealing member 3 may have the same function as the coating layer 7.
  • the above-described effects can be obtained by providing such a function in the sealing member 3, it is not necessarily provided in the semiconductor light emitting device 1, and may be omitted as necessary. It is. Further, according to the characteristics of the semiconductor light-emitting element 4 and the light-emitting characteristics required for the semiconductor light-emitting device 1, the light in a predetermined wavelength region is transmitted favorably and the light outside the wavelength region is reflected well.
  • the sealing member 3 has an optical band-pass filter function that reflects well with respect to light in a predetermined wavelength region and conversely transmits light outside the wavelength region. You may make it let.
  • the semiconductor light emitting device 1 is formed in a plate shape having the wiring substrate 2 on which the plurality of semiconductor light emitting elements 4 are mounted, the first surface 3a, and the second surface 3b. And a sealing member 3 having a cavity 5 recessed in the first surface 3a, and a fluorescent portion 6 accommodated in each of the cavities 5. Then, as shown in FIG. 2, the wiring board 2 and the sealing member 3 are arranged such that the surface of the wiring board 2 on which the semiconductor light emitting element 4 is mounted and the first surface 3 a of the sealing member 3 face each other. And the semiconductor light emitting element 4 on the wiring substrate 2 are covered with the fluorescent parts 6 accommodated in the corresponding cavities 5, respectively, and the phosphor contained in the fluorescent part 6 is replaced with the semiconductor light emitting element. 4 is around.
  • each fluorescent part 6 and the semiconductor light emitting element 2 are sealed in the cavity 5 by bonding the wiring substrate 2 and the sealing member 3.
  • Each fluorescent part 6 and the semiconductor light emitting element 2 can be protected from the external environment. Therefore, it is not necessary to provide a separate protective member, and the reliability and durability of the semiconductor light emitting device 1 can be improved with a simple configuration. Further, for example, when bonding the wiring board 2 and the sealing member 3, an adhesive having excellent sealing properties is used, or after bonding the wiring board 2 and the sealing member 3, the wiring board 2 and the sealing member 3 are used.
  • the reliability and durability of the semiconductor light emitting device 1 can be further improved if the sealing performance is improved by forming a seal at the peripheral edge of the semiconductor light emitting device.
  • an epoxy resin, an acrylic resin, a silicone resin, a urethane resin, or the like can be used as the adhesive. It is more preferable to select an adhesive in consideration of the adhesion between the wiring board 2 and the sealing member 3. In addition, the adhesive prevents the external gas such as water vapor or oxygen from entering the region surrounded by the wiring substrate 2 and the sealing member 3 (that is, the cavity 5 and the fluorescent portion 6) from the outside of the semiconductor light emitting device 1. It is preferable to adjust the water vapor permeability, water vapor permeability coefficient, oxygen permeability, and oxygen permeability coefficient as follows. Specifically, when measured at 23 ° C.
  • the water vapor permeability of the adhesive is preferably 10 g / m 2 ⁇ day or less, and more preferably 5 / m 2 ⁇ day or less. It is preferably 2 / m 2 ⁇ day or less.
  • the water vapor transmission coefficient of the adhesive is preferably 10 g ⁇ mm / m 2 ⁇ day or less, and preferably 5 g ⁇ mm / m 2 ⁇ day or less. More preferably, it is 2 g ⁇ mm / m 2 ⁇ day or less.
  • the water vapor transmission coefficient of the adhesive is preferably 10 g ⁇ mm / m 2 ⁇ day or less, and preferably 5 g ⁇ mm / m 2 ⁇ day or less. More preferably, it is 2 g ⁇ mm / m 2 ⁇ day or less.
  • the oxygen permeability of the adhesive is preferably 1000 cm 3 / m 2 ⁇ day ⁇ atm or less, and 500 cm 3 / m 2 ⁇ day ⁇ atm. More preferably, it is 200 cm ⁇ 3 > / m ⁇ 2 > * day * atm or less. Then, when measured at 23 ° C.
  • the oxygen permeability coefficient of the adhesive is preferably not more than 1000cm 3 ⁇ mm / m 2 ⁇ day ⁇ atm, 100cm 3 ⁇ mm / m 2 More preferably, it is not more than day ⁇ atm, and particularly preferably not more than 10 cm 3 ⁇ mm / m 2 ⁇ day ⁇ atm. Note that if the above-described water vapor permeability, water vapor permeability coefficient, oxygen permeability, or oxygen permeability coefficient can be satisfied as a whole of the adhesive, a composite material in which another material is appropriately added to the above-described specific material is bonded. It may be used as an agent.
  • the adhesive prevents the external gas such as water vapor or oxygen from entering the region surrounded by the wiring substrate 2 and the sealing member 3 (that is, the cavity 5 and the fluorescent portion 6) from the outside of the semiconductor light emitting device 1. It is preferable to adjust the thickness as follows. Specifically, the thickness of the adhesive is preferably 0.2 mm or more, more preferably 0.5 mm or more, and particularly preferably 1.0 mm or more. In addition, it is preferable that the thickness of the said adhesive agent is 10 mm or less from a viewpoint of weight reduction and compactization of a semiconductor light-emitting device.
  • a total of 36 semiconductor light emitting elements 4 are arranged in a matrix by mounting six semiconductor light emitting elements 4 in one horizontal row on the wiring board 2.
  • 36 cavities 5 are recessed in the first surface 3 a of the sealing member 3. It is possible to make all the phosphors contained in the fluorescent parts 6 accommodated in the respective cavities 5 the same, and to obtain the same primary light, but in this embodiment, a plurality of types of phosphors are used, Multiple types of primary light are obtained.
  • a GaN-based LED that emits near-ultraviolet light is used as the semiconductor light-emitting element 4, and accordingly, a red phosphor, a green phosphor, and a blue phosphor that convert the wavelength of near-ultraviolet light to the phosphor corresponding thereto.
  • Three types of phosphors are used. Of the 36 cavities 5, 12 cavities (first cavities) 5 have fluorescent parts 6 containing red phosphors, and 12 of the remaining 24 cavities (second cavities) 5 have 12 cavities (second cavities) 5. The fluorescent portion 6 containing green phosphor is housed, and the remaining 12 cavities (third cavities) 5 contain the fluorescent portion 6 containing blue phosphor.
  • FIG. 9 is a schematic diagram illustrating an example of the arrangement of the fluorescent portions 6 in the semiconductor light emitting device 1.
  • the cavity 5 containing the fluorescent part 6 containing the red phosphor is assigned R
  • the cavity 5 containing the green part 6 containing the green phosphor is given G
  • the blue fluorescence The cavity 5 in which the fluorescent part 6 containing the body is accommodated is denoted by B.
  • the primary light emitted from each fluorescent part 6 is prevented by preventing the cavities 5 containing the fluorescent parts 6 containing the same type of phosphor in the vertical and horizontal directions from being adjacent to each other. Can be synthesized well to obtain uniform emission light.
  • the near-ultraviolet light emitted from each semiconductor light-emitting element 4 is scattered in the fluorescent part 6 covering each semiconductor light-emitting element 4 and is contained in the fluorescent part 6. To be absorbed.
  • the phosphor contained in the fluorescent portion 6 is a red phosphor, red light is emitted from the phosphor, when the green phosphor is green light, green light is emitted, and when blue phosphor is emitted, blue light is emitted from the phosphor. It is done.
  • the primary light emitted from the phosphor reaches the wall surface of the cavity 5 together with near-ultraviolet light that has not been wavelength-converted by the phosphor.
  • the near-ultraviolet light emitted from the semiconductor light-emitting element 4 has a higher reflectance than visible light in a longer wavelength region than the near-ultraviolet light, and the visible light has a higher transmission than the near-ultraviolet light.
  • the coating layer 7 having better transparency due to the property is formed on the wall surface of the cavity 5 as described above, most of the red light, green light, and blue light emitted from each phosphor is the coating layer 7.
  • the near-ultraviolet light that reaches the coating layer 7 on the wall surface of the cavity 5 without being wavelength-converted by the phosphor is reflected by the coating layer 7 to be reflected in the fluorescent part.
  • the red light, the green light, and the blue light that have reached the inside of the sealing member 3 are scattered and synthesized in the sealing member 3 and emitted as white light from the second surface 3b of the sealing member 3. .
  • the spectrum width of the primary light from the fluorescent part 6 is relatively wide, and by combining the red light, the green light, and the blue light in this way, it becomes possible to obtain outgoing light close to light having a continuous spectrum. Excellent color rendering can be ensured.
  • the coating layer 7 is provided, the opportunity to convert the wavelength of the near-ultraviolet light reflected by the coating layer 7 by the phosphor contained in the fluorescent portion 6 is obtained again.
  • the coating layer 7 As a result, compared to the case where the coating layer 7 is not provided, the amount of visible light that is wavelength-converted by the phosphor and emitted from the semiconductor light-emitting device 1 is increased, and the semiconductor light-emitting device 1 is not wavelength-converted by the phosphor. It is possible to reduce the amount of near-ultraviolet light emitted from the.
  • FIG. 10 is a schematic diagram showing a first modification of the arrangement of the fluorescent portions 6 in the semiconductor light emitting device 1 in the same manner as FIG.
  • the cavities 5 that accommodate the fluorescent portions 6 containing the same type of phosphors are arranged in a vertical row.
  • the semiconductor light emitting element 4 disposed in the cavity 5 containing the fluorescent portion 6 containing the red phosphor is not energized, and other semiconductor light emitting elements 4 are energized, green light and blue light are emitted. And the combined light is obtained.
  • the semiconductor light emitting element 4 is energized without energizing only the semiconductor light emitting element 4 corresponding to any one type of phosphor, two kinds of phosphors corresponding to the energized semiconductor light emitting element 4 are used. Outgoing light obtained by synthesizing the primary light is obtained.
  • all the semiconductor light emitting elements 4 are energized, emitted light obtained by combining red light, green light and blue light is obtained.
  • white light is obtained.
  • Output light of various chromaticities including light can be obtained.
  • the chromaticity, luminance, saturation, and color temperature of light emitted from the semiconductor light emitting device 1 can be arbitrarily adjusted by adjusting the power supplied to each semiconductor light emitting element 4. It becomes possible.
  • the kind and number of the phosphors to be included in the fluorescent part 6 are not limited to the above-described examples, and arbitrary ones can be used and are appropriately selected according to the light emission characteristics required for the semiconductor light emitting device 1. be able to.
  • a single fluorescent portion 6 it is possible for a single fluorescent portion 6 to contain a plurality of phosphors.
  • the semiconductor light-emitting element 4 is a GaN-based LED that emits near-ultraviolet light as in the present embodiment, and a red phosphor, a green phosphor, and a blue phosphor that convert the wavelength of near-ultraviolet light are mixed in a filler.
  • Each fluorescent part 6 is formed.
  • the primary light obtained from each phosphor portion 6 is also the same. That is, by adjusting the ratio of the red phosphor, the green phosphor, and the blue phosphor, it is possible to obtain the semiconductor light emitting device 1 that emits white light having a desired fixed color temperature, for example.
  • the ratio of the red phosphor, the green phosphor, and the blue phosphor is adjusted, and the primary light different between the fluorescent part 6 accommodated in a part of the plurality of cavities 5 and the fluorescent part 6 accommodated in the remaining part. Can also be obtained.
  • the ratio of the red phosphor, the green phosphor and the blue phosphor is adjusted so that the color temperature of the white light emitted from some of the fluorescent parts 6 and the color temperature of the white light emitted from the remaining fluorescent parts 6 are different. can do.
  • An example of the arrangement of the cavity 5 in which one fluorescent part 6 is accommodated and the cavity 5 in which the other fluorescent part 6 is accommodated when two types of fluorescent parts 6 are formed in this way is the second example of this embodiment. A modification is shown in FIG.
  • FIG. 11 is a schematic diagram showing a second modification of the arrangement of the fluorescent portions 6 in the semiconductor light emitting device 1.
  • the cavity 5 that houses the fluorescent part 6 that emits the primary light of the first color temperature T1 (for example, 2600K) is given W1
  • the fluorescence that emits the primary light of the second color temperature T2 for example, 9000K.
  • the cavity 5 that accommodates the portion 6 is marked with W2.
  • the primary light from each fluorescent part 6 is synthesized well by preventing the cavities 5 containing the same fluorescent part 6 from being adjacent to each other. Outgoing light with uniform temperature can be obtained.
  • positioning of the two types of cavity 5 shown in FIG. 11 is an example, Comprising: These cavities 5 can be arrange
  • the fluorescent parts 6 are arranged in the cavity 5 that houses the fluorescent part 6 that emits the primary light of the first color temperature T1.
  • the light emitted from the semiconductor light emitting device 1 becomes white light having the first color temperature T1.
  • the semiconductor light emitting element 4 disposed in the cavity 5 that houses the fluorescent portion 6 that emits the primary light of the second color temperature T2 is energized, the emitted light of the semiconductor light emitting device 1 is emitted from the second color temperature T2.
  • White light when only the semiconductor light emitting element 4 disposed in the cavity 5 that houses the fluorescent portion 6 that emits the primary light of the second color temperature T2 is energized, the emitted light of the semiconductor light emitting device 1 is emitted from the second color temperature T2.
  • the near-ultraviolet light emitted from each semiconductor light emitting element 4 is scattered in the fluorescent part 6 covering each semiconductor light emitting element 4, and the fluorescence contained in the fluorescent part 6.
  • Primary light is emitted by wavelength conversion by the body.
  • the primary light emitted from the phosphor reaches the wall surface of the cavity 5 together with near-ultraviolet light that has not been wavelength-converted by the phosphor.
  • the near-ultraviolet light emitted from the semiconductor light-emitting element 4 has a higher reflectance than visible light in a longer wavelength region than the near-ultraviolet light, and is higher than the near-ultraviolet light with respect to the visible light.
  • the coating layer 7 having good transparency due to the transmittance When the coating layer 7 having good transparency due to the transmittance is formed on the wall surface of the cavity 5, most of the primary light emitted from each phosphor transmits the coating layer 7 well and the sealing member 3, most of the near-ultraviolet light that reaches the coating layer 7 on the wall surface of the cavity 5 without being wavelength-converted by the phosphor is reflected by the coating layer 7 and returns to the fluorescent part 6.
  • the white light having the first color temperature T1 and the white light having the second color temperature T2 that have reached the inside of the sealing member 3 are scattered and combined in the sealing member 3, and the second light of the sealing member 3 is combined.
  • the light is emitted from the surface 3b as emitted light.
  • the spectral width of the primary light from the fluorescent portion 6 is relatively wide, and in this way, the white light having the first color temperature T1 and the white light having the second color temperature T2 are combined, and in this case as well, it is continuous. Output light close to light having a spectrum can be obtained, and excellent color rendering can be ensured.
  • the sealing member 3 has the coating layer 7, there is an opportunity for wavelength conversion of near-ultraviolet light reflected by the coating layer 7 by the phosphor contained in the fluorescent portion 6. Get again.
  • the amount of visible light that is wavelength-converted by the phosphor and emitted from the semiconductor light-emitting device 1 is increased, and the semiconductor light-emitting device 1 is not wavelength-converted by the phosphor. It is possible to reduce the amount of near-ultraviolet light emitted from the.
  • the emission color of the semiconductor light emitting device 1 can be varied in various ways.
  • Light with a wide spectrum from near ultraviolet light to near infrared light such as illumination light from warm white to bulb color, CIE standard light (A, B, C, and D65), light with sunlight (natural light) spectrum, etc. It is possible to obtain light.
  • the primary light wavelength is preferably a combination of 400 nm to 490 nm (blue) and 560 nm to 590 nm (yellow), preferably a combination of 480 nm to 500 nm (blue green) and 580 nm to 700 nm (red).
  • a combination of 490 nm (blue) and 560 nm to 590 nm (yellow) is preferred.
  • the primary light wavelengths are combinations of 430 nm to 500 nm, 500 nm to 580 nm, and 580 nm to 700 nm, combinations of 430 nm to 480 nm, 480 nm to 500 nm, and 580 nm to 700 nm, 430 nm to 500 nm, 560 nm to 590 nm, and 590 nm to 590 nm, respectively.
  • a combination of 700 nm is preferred.
  • combinations of 430 nm to 500 nm, 500 nm to 580 nm, and 580 nm to 700 nm are preferable.
  • the primary light wavelengths are combinations of 430 nm to 500 nm, 500 nm to 580 nm, 580 nm to 620 nm, and 620 nm to 700 nm, combinations of 430 nm to 480 nm, 480 nm to 500 nm, 500 nm to 580 nm, and 580 nm to 700 nm, respectively.
  • Combinations of 480 nm, 480 nm to 500 nm, 560 nm to 590 nm, and 590 nm to 700 nm are preferred.
  • combinations of 430 nm to 500 nm, 500 nm to 580 nm, 580 nm to 620 nm, and 620 nm to 700 nm are preferable.
  • Combinations of primary light wavelengths of 430 nm to 480 nm, 480 nm to 500 nm, 500 nm to 580 nm, 580 nm to 620 nm, and 620 nm to 700 nm are preferable.
  • an electric circuit for appropriately supplying electric power to each semiconductor light emitting element 4 is configured in order to obtain desired emitted light by the primary light emitted from the fluorescent portion 6. .
  • such an electric circuit is realized by the wiring pattern of the wiring board 2 as described above.
  • the wiring pattern of the wiring board 2 is used. Is connected to the controller. Note that such a controller can be provided on the wiring board 2.
  • the manufacturing process can be simplified, and the apparatus can be used when the semiconductor light emitting device 1 is applied to a lighting device or an image display device. A compact configuration is possible.
  • the electrical circuit of the semiconductor light emitting device 1 can be variously configured according to the configuration of the semiconductor light emitting device 1, the required light emission characteristics, and the like.
  • FIG. 9 shows an example of the arrangement of the fluorescent part 6 of this embodiment.
  • FIG. 12 shows an example of an electric circuit when three types of fluorescent parts 6 are provided as in the semiconductor light emitting device 1 of FIG. 10 showing the first modification.
  • the semiconductor light-emitting element located in the cavity 5 containing the fluorescent part 6 containing the red phosphor is denoted by reference numeral 4r
  • a semiconductor light emitting element located in the cavity 5 containing the fluorescent part 6 containing the blue phosphor is denoted by 4b.
  • the semiconductor light emitting elements 4r corresponding to the fluorescent part 6 containing a red phosphor are connected in series.
  • the most anode side of these semiconductor light emitting elements 4r is connected to a power supply line for supplying the power supply voltage Vcc to the ground via a current adjusting resistor Rr, and the most cathode side is connected to the collector of the transistor Qr. Yes.
  • the emitter of the transistor Qr is connected to the ground.
  • the transistor Qr can be switched between an on state and an off state in accordance with a base signal.
  • each semiconductor light emitting element is connected via a resistor Rr from a power supply line that supplies a power supply voltage Vcc.
  • a drive current flows through 4r, and each semiconductor light emitting element 4r emits light.
  • the resistor Rr is provided to determine a drive current supplied to each semiconductor light emitting element 4r when the transistor Qr is turned on.
  • the voltage applied to the resistor Rr is a voltage obtained by subtracting the sum of the forward voltages Vf of the semiconductor light emitting element 4r and the saturation voltage between the collector and the emitter of the transistor Qr from the power supply voltage Vcc. Therefore, the resistance value of the resistor Rr can be obtained from the voltage applied to the resistor Rr at this time and the desired current value that flows through the semiconductor light emitting element 4r when the transistor Qr is turned on.
  • a semiconductor light emitting element 4g corresponding to the fluorescent part 6 containing the green phosphor is also connected in series, and similarly to the semiconductor light emitting element 4r, the most anode side of these semiconductor light emitting elements 4g supplies the power supply voltage Vcc to the ground.
  • the power supply line is connected through a current adjusting resistor Rg, and the most cathode side is connected to the collector of the transistor Qg.
  • the emitter of the transistor Qg is connected to the ground, and the transistor Qg operates in accordance with the base signal in the same manner as the transistor Qr.
  • each semiconductor light emitting element 4g emits light.
  • the resistance value of the resistor Rg is also obtained based on the total forward voltage Vf of the semiconductor light emitting element 4g and the collector-emitter saturation voltage of the transistor Qg, as in the case of the resistor Rr.
  • a semiconductor light emitting element 4b corresponding to the fluorescent part 6 containing the blue phosphor is also connected in series, and, like the semiconductor light emitting element 4r, the most anode side of these semiconductor light emitting elements 4b supplies the power supply voltage Vcc to the ground.
  • the power supply line is connected via a current adjusting resistor Rb, and the most cathode side is connected to the collector of the transistor Qb.
  • the emitter of the transistor Qb is connected to the ground, and the transistor Qb operates in accordance with the base signal in the same manner as the transistor Qr.
  • each semiconductor light emitting element 4b emits light.
  • the resistance value of the resistor Rb is also obtained based on the total forward voltage Vf of the semiconductor light emitting element 4b and the saturation voltage between the collector and emitter of the transistor Qb, as in the case of the resistor Rb.
  • the transistor Qr, the transistor Qg, the transistor Qb, and the resistors Rr, Rg, and Rb constitute a controller of the semiconductor light emitting device 1 together with the PWM controller 8.
  • the bases of the transistor Qr, the transistor Qg, and the transistor Qb are electrically connected to the PWM control unit 8 so as to receive a drive pulse signal output from the PWM control unit 8.
  • the drive pulse signal output from the PWM controller 8 is a variable pulse width signal. When the drive pulse signal is at the H level, the transistor Qr, transistor Qg, or transistor Qb that has received the drive pulse signal is turned on. When the drive pulse signal is at the L level, the transistor Qr, transistor Qg, or transistor Qb that has received the drive pulse signal is turned off.
  • FIG. 13 shows the current flowing through the semiconductor light emitting element 4r, the semiconductor light emitting element 4g, and the semiconductor light emitting element 4b when such a drive pulse signal is sent from the PWM controller 8 to the bases of the transistor Qr, transistor Qg, and transistor Qb.
  • the drive pulse signals are all sent from the PWM control unit 8 with a period to, and the current of each semiconductor light emitting element also flows in a pulse form with the period to as shown in FIG. .
  • the semiconductor light emitting element 4r emits light when the current Ir flows, the semiconductor light emitting element 4g emits light when the current Ig flows, and the semiconductor light emitting element 4b emits light when the current Ib flows.
  • the green light emission time tg is the shortest
  • the blue light emission time tb is the longest
  • the red light emission time tr is between them.
  • the emission intensity of red light, green light and blue light is determined by the respective emission times
  • the emission color of the semiconductor light emitting device 1 is determined by the emission intensity of red light, green light and blue light.
  • a desired emission color can be obtained by individually variably adjusting the pulse width of the driving pulse signal to the transistor Qr, the transistor Qg, and the transistor Qb.
  • the drive pulse signals for the transistors Qr, Qg, and Qb are sent at the same timing.
  • the timing of sending the drive pulse signal is not limited to this. It is also possible to send the messages in different ways. In this case, when emitting light by combining red light, green light, and blue light, each semiconductor light emitting element cannot emit light continuously, but power is distributed to each semiconductor light emitting element from a power source. Therefore, the power supply capacity can be reduced. In this case, the current adjusting resistors Rr, Rg, and Rb can be shared.
  • the semiconductor light emitting element 4r, the semiconductor light emitting element 4g, and the semiconductor light emitting element 4b are connected in series.
  • the connection method is not limited to this, and the semiconductor light emitting element 4r is not limited thereto.
  • parallel connection and series connection may be used together, or all of them may be connected in parallel.
  • the transistor Qr, the transistor Qg, and the transistor Qb are each turned on and off by the drive pulse signal of the PMW control unit 8, but instead, the transistor Qr is turned on by the drive pulse signal.
  • the currents flowing through the transistor Qg and the transistor Qb may also be controlled.
  • the resistors Rr, Rg, and Rb for adjusting current are not necessary.
  • constant current circuits may be inserted in place of the resistors Rr, Rg, and Rb, respectively, and the transistors Qr, Qg, and Qb may be turned on and off as in the example of FIG.
  • FIG. 14 shows an electric circuit in the case of providing.
  • reference numeral 4w1 denotes a semiconductor light emitting element positioned in the cavity 5 that houses the fluorescent part 6 that emits the primary light of the first color temperature T1, and the fluorescent part 6 that emits the primary light of the second color temperature T2.
  • the semiconductor light emitting element located in the accommodated cavity 5 is denoted by reference numeral 4w2.
  • the collectors of the transistors Q1 and Q2 are connected to a power supply line that supplies the power supply voltage Vcc to the ground, the emitter of the transistor Q1 is connected to the collector of the transistor Q3, and the emitter of the transistor Q2 is Each is connected to the collector of the transistor Q4.
  • the emitters of the transistors Q3 and Q4 are each connected to the ground.
  • the semiconductor light emitting element 4w1 corresponding to the fluorescent part 6 that emits the primary light of the first color temperature T1 is connected in series, and the anode side is connected to the connection point between the emitter of the transistor Q1 and the collector of the transistor Q3, The cathode side is connected to one end side of the current adjusting resistor Rw.
  • the semiconductor light emitting element 4w2 corresponding to the fluorescent part 6 that emits the primary light of the second color temperature T2 is also connected in series, and the most cathode side is connected to the connection point between the emitter of the transistor Q1 and the collector of the transistor Q3.
  • the anode side is connected to one end side of the resistor Rw for current adjustment like the semiconductor light emitting element 4w1.
  • the other end of the resistor Rw is connected to a connection point between the emitter of the transistor Q2 and the collector of the transistor Q4.
  • All of the four transistors Q1 to Q4 can be switched between an on state and an off state in accordance with the respective base signals, and the transistors Q1 and Q4 are synchronized while the transistors Q2 and Q3 are in the off state.
  • the transistor Q2 and the transistor Q3 are turned on synchronously while the transistor Q1 and the transistor Q4 are turned off.
  • a driving current flows from the power supply line that supplies the power supply voltage Vcc to each semiconductor light emitting element 4w1 through the transistor Q1, the resistor Rw, and the transistor Q4.
  • Each semiconductor light emitting element 4w1 emits light.
  • the resistor Rw is provided to determine the drive current supplied to the semiconductor light emitting element 4w1 or the semiconductor light emitting element 4w2.
  • the voltage applied to the resistor Rw is the sum of the forward voltage Vf of each semiconductor light emitting element 4w1 or each semiconductor light emitting element 4w2 from the power supply voltage Vcc, the saturation voltage between the collector and emitter of the transistor Q1, and the collector and emitter of the transistor Q4.
  • the voltage is obtained by subtracting the sum of the saturation voltages between them. Therefore, the resistance value of the resistor Rw is obtained from the voltage applied to the resistor Rw at this time and the desired current value that flows through the semiconductor light emitting element 4w1 and the semiconductor light emitting element 4w2 when the transistor Q1 and the transistor Q4 are in the on state.
  • the electric characteristics of the four transistors Q1 to Q4 are substantially the same. Instead of the sum of the saturation voltage between the collector and the emitter of the transistor Q1 and the saturation voltage between the collector and the emitter of the transistor Q4, the transistor Q2 The sum of the saturation voltage between the collector and the emitter and the saturation voltage between the collector and the emitter of the transistor Q3 may be used.
  • the four transistors Q1 to Q4 and the resistor Rw together with the PWM controller 9 constitute a controller of the semiconductor light emitting device 1.
  • the bases of the four transistors Q1 to Q4 are electrically connected to the PWM control unit 9 so as to receive drive pulse signals output from the PWM control unit 9.
  • the drive pulse signal output from the PWM controller 9 is a signal having a variable pulse width, and when the drive pulse signal is at the H level, the drive pulse signal is received from the four transistors Q1 to Q4. Is turned on and the drive pulse signal is at the L level, the transistor that has received the drive pulse signal among the four transistors Q1 to Q4 is turned off.
  • FIG. 15 schematically shows an example of the operating states of the transistors Q1 to Q4 and the current flowing through the resistor Rw when the drive pulse signal is sent from the PWM controller 9 to the bases of the four transistors Q1 to Q4, respectively. It is a time chart shown.
  • the current flowing through the resistor Rw corresponds to the current flowing through the semiconductor light emitting element 4w1 or the semiconductor light emitting element 4w2
  • the positive current shown in FIG. 15 corresponds to the drive current I1 flowing through the semiconductor light emitting element 4w1
  • the negative current corresponds to the drive current I2 flowing through the semiconductor light emitting element 4w2.
  • the drive pulse signals are all sent from the PWM control unit 9 at a period t0.
  • the current of each semiconductor element is also pulsed at a period t0 as shown in FIG. Flowing.
  • the transistor Q1 and the transistor Q4 are turned on by the drive pulse signal from the PWM controller 9, the transistor Q2 and the transistor Q3 are turned off, and the semiconductor light emitting element 4w1 is turned on as described above. While the drive current I1 flows and the drive current I1 flows, the semiconductor light emitting element 4w1 emits light.
  • the transistor Q2 and the transistor Q3 are turned on by the drive pulse signal from the PWM control unit 9, the transistors Q1 and Q4 are turned off, and the drive current I2 is supplied to the semiconductor light emitting element 4w2 as described above.
  • the semiconductor light emitting element 4w2 emits light while the drive current I2 flows.
  • the light emission time t1 of the semiconductor light emitting element 4w1 is longer than the light emission time t2 of the semiconductor light emitting element 4w2, and the sum of the light emission time t1 and the light emission time t2 is the period t0.
  • the emission intensity of the white light at the color temperature T1 and the white light at the color temperature T2 is determined by the respective emission times, and is emitted from the semiconductor light emitting device 1 by the emission intensity of the white light at the color temperature T1 and the white light at the color temperature T2. Since the color temperature of the white light to be determined is determined, white light having a desired color temperature can be obtained by variably adjusting the ratio of the pulse width t1 and the pulse width t2 in the drive pulse signal output from the PWM controller 9. It becomes.
  • the semiconductor light emitting element 4w1 and the semiconductor light emitting element 4w2 are connected in series.
  • the connection method is not limited to this, and the semiconductor light emitting element 4w1 and the semiconductor light emitting element 4w2 are connected.
  • parallel connection and series connection may be used together, or all may be connected in parallel.
  • the four transistors Q1 to Q4 are turned on and off by the drive pulse signal of the PMW controller 9, but instead, the transistors Q1 to Q4 flow through the drive pulse signal.
  • the current may also be controlled.
  • the resistor Rw for adjusting the current is not necessary.
  • a constant current circuit may be inserted in place of the resistor Rw, and the four transistors Q1 to Q4 may be turned on and off as in the example of FIG.
  • the transistors Q2 and Q3 are turned off when the transistors Q1 and Q4 are on, and the transistors Q1 and Q4 are turned off when the transistors Q2 and Q3 are on.
  • a period in which all of the four transistors Q1 to Q4 are off may be provided.
  • each semiconductor light emitting element can emit light simultaneously or continuously.
  • the semiconductor light-emitting device 1 of this embodiment includes a step for forming the cavity 5 in the sealing member 3, a step for accommodating the fluorescent portion 6 in the cavity 5, and a semiconductor light-emitting element on the wiring substrate 2.
  • the manufacturing process includes a process for mounting 4 and a process for bonding the wiring substrate 2 to which the semiconductor light emitting element 4 is mounted and the sealing member 3 in which the fluorescent portion 6 is housed in the cavity 5 as main manufacturing processes. Manufactured by the method.
  • the cavity 5 is formed in the sealing member 3.
  • the material of the sealing member 3 is not limited as long as the gist of the present invention is not changed. Therefore, the method for forming the cavity 5 in the sealing member 3 may be appropriately selected according to the material of the sealing member 3 and the specifications of the cavity 5 as long as the gist of the present invention is not changed.
  • the sealing member 3 made of glass is used.
  • the cavity 5 is formed in the sealing member 3 by wet etching. Below, the formation method of the cavity 5 is demonstrated using FIG.
  • a glass material having a first surface 3 a and a second surface 3 b and having a plate shape is prepared as the sealing member 3.
  • a masking process is performed over the entire sealing member 3 using a masking material 10 that is resistant to the etching solution.
  • a masking material 10 that is resistant to the etching solution.
  • at least the first surface 3 a of the sealing member 3 is masked by screen printing, and the first surface of the sealing member 3 is formed at the position where the cavity 5 is formed according to the opening shape of the cavity 5.
  • the sealing member 5 is immersed in an etching solution prepared by containing hydrogen fluoride and sulfuric acid in water for a predetermined time, thereby sealing as shown in FIG.
  • the cavity 5 is recessed in the first surface 3 a of the member 3.
  • the sealing member 3 is washed to remove the etching solution, and the masking covering the sealing member 3 is further removed, so that the cavity 5 is provided as shown in FIG.
  • the obtained sealing member 3 is obtained.
  • the cavity 5 has a higher reflectance on the wall surface of the cavity 5 than the light wavelength-converted by the fluorescent part 6 with respect to the light emitted from the semiconductor light-emitting element 4.
  • a coating layer 7 is obtained by forming an interference film made of a multilayer dielectric laminated film in which a plurality of refractive index layers and low refractive index layers are alternately laminated on the wall surface of the cavity 5.
  • the near-ultraviolet light emitted from the semiconductor light emitting element 4 has a higher reflectance than visible light in a wavelength region longer than the near-ultraviolet light, and has a higher transmittance than the near-ultraviolet light with respect to the visible light.
  • the coating layer 7 having good transparency is formed, a thin film made of TiO 2 as a high refractive index layer and a thin film made of SiO 2 as a low refractive index layer are alternately formed in the cavity 5 by vapor deposition or sputtering.
  • the coating layer 7 is formed by laminating a plurality of times.
  • Such a coating layer 7 can also be formed on the second surface 3b of the sealing member 3 as described above. In this case, the coating layer 7 can also be formed before the cavity 5 is formed. . Further, when the material of the sealing member 3 itself has the same function as that of the coating layer 7, the process for forming the coating layer 7 as described above is not necessary.
  • the wet etching employed in the present embodiment when forming the cavity 5 is not limited to the above-described method, and a masking process method, the type of etching solution, and the like can be appropriately selected. For example, after covering the entire sealing member 3 with a metal such as chromium by sputtering or the like, only the metal coating at the position where the cavity 5 is formed is removed according to the shape of the opening of the cavity 5 and then etching with an etching solution is performed. You may go. Further, instead of wet etching, methods such as dry etching, laser beam irradiation, sand blasting, and grinding can be used.
  • each of the cavities 5 of the sealing member 3 obtained in this way is filled with a fluorescent part material 6 ′ having a fluidity by mixing a phosphor and a filler, thereby forming the fluorescent part 6.
  • a fluorescent part material 6 ′ having a fluidity by mixing a phosphor and a filler, thereby forming the fluorescent part 6.
  • various methods can be used for filling the fluorescent part material 6 ′.
  • the fluorescent part material 6 ′ is used by using a squeegee.
  • the fluorescent part 6 is formed by filling each cavity 5 with the fluorescent part material 6 ′. Below, the formation process of such a fluorescence part 6 is demonstrated using FIG.
  • a metal mask (covering material) 11 having an opening corresponding to each cavity 5 on the first surface 3a of the sealing member 3 in which the cavity 5 is formed.
  • each cavity 5 is exposed and the periphery of each cavity 5 is covered with a metal mask 11.
  • the fluorescent part material 6 ′ is placed on the metal mask 11, and the squeegee 12 is slid in the direction of the arrow A shown in FIG.
  • Each cavity 5 is filled with the fluorescent part material 6 ′ through the opening of the metal mask 11.
  • the metal mask 11 that is in close contact with the sealing member 3 is removed, thereby removing the cavity 5.
  • the fluorescent part 6 accommodated in the is formed. At this time, depending on the thickness of the used metal mask 11, the fluorescent part 6 may rise from the first surface 3 a of the sealing member 3.
  • the cavity 5 that accommodates the same type of fluorescent part 6 is left, and the other cavities 5 are provided.
  • the cavity 5 that is not covered with the metal mask 11 is filled with the fluorescent part material 6 ′ as described above, for each type of fluorescent part 6. It suffices to repeat the number of types of part 6.
  • the fluorescent part material 6 ′ is applied to the sealing member 3 using a squeegee so that each cavity 5 is filled with the fluorescent part material 6 ′ to form the fluorescent part 6.
  • the method of applying the fluorescent part material 6 ′ is not limited to this, and may be performed by printing such as screen printing. Further, instead of coating, the fluorescent part 6 may be formed by filling each cavity 5 with the fluorescent part material 6 ′ by potting.
  • the semiconductor light emitting device 1 is obtained by bonding the wiring substrate 2 on which the semiconductor light emitting element 4 is mounted and the sealing member 3 in which the fluorescent portion 6 is accommodated in each cavity 5 as described above.
  • the mounting of each semiconductor light emitting element 4 to the wiring board 2 prior to such a bonding step can be performed by a generally well-known method, and thus detailed description is omitted here, but this embodiment In this case, the semiconductor light emitting element 4 is mounted on the wiring board 2 by flip chip mounting as described above.
  • the mounting of the semiconductor light emitting element 4 to the wiring board 2 is not limited to this, and an appropriate method can be selected according to the type and structure of the semiconductor light emitting element 4. Bonding, single wire bonding, or the like can also be employed. Below, the manufacturing process for joining the wiring board 2 and the sealing member 3 is demonstrated using FIG.
  • each cavity 5 the sealing member 3 in which the fluorescent portion 6 is accommodated in each cavity 5 is fixed so that the first surface 3a faces upward. Then, an adhesive (not shown) is applied to the first surface 3a of the sealing member 3 from the outer edge portion to a predetermined range.
  • the surface where the semiconductor light emitting element 4 is mounted faces upward and faces the first surface 3a of the sealing member 3 above the sealing member 3.
  • the wiring board 2 is positioned. At this time, each semiconductor light-emitting element 4 is positioned directly above the corresponding cavity 5, that is, for example, so that the center of the cavity 5 and the center of the semiconductor light-emitting element 4 when viewed in a plan view coincide with each other.
  • the wiring board 2 and the sealing member 3 are aligned.
  • the wiring board 2 is moved in the direction of arrow B shown in FIG. 18B, and the wiring board 2 is joined to the sealing member 3 as shown in FIG.
  • the semiconductor light emitting elements 4 mounted on the wiring board 2 are positioned in the corresponding cavities 5, and the semiconductor light emitting elements 4 are covered by the fluorescent portions 6 accommodated in the cavities 5.
  • the fluorescent part 6 overflowing from the cavity 5 due to the entry of the semiconductor light emitting element 4, or the fluorescent part rising from the first surface 3 a of the sealing member 3 when the fluorescent part 6 is accommodated in the cavity 5 as described above. 6 is accommodated in a recess 2 a formed in the wiring board 2 at the mounting position of each semiconductor light emitting element 4.
  • the filler that forms the fluorescent part 6 together with the phosphor has fluidity at least until the above-described joining step is completed, and in this embodiment, a thermosetting resin is used. Therefore, after bonding the wiring board 2 and the sealing member 3 as shown in FIG. 18C, the semiconductor light emitting device 1 is heated at a predetermined temperature (for example, 150 ° C.) for a predetermined time (for example, 1 hour). Thus, the fluorescent part 6 accommodated in each cavity 5 is cured.
  • the filler is not limited to the thermosetting resin, and various curable materials such as a photocurable resin (UV curable resin) can be used. Moreover, it is also possible to enclose the fluorescent part 6 in the cavity 5 while maintaining fluidity without curing.
  • the semiconductor light emitting device 1 of the present embodiment can be obtained. Therefore, it is not necessary to separately attach the reflector and the partition to the wiring board as in the prior art, or to form the annular side wall and the partition wall on the wiring board, and the manufacturing process can be simplified. Further, since the sealing member 3 also has a function of protecting the fluorescent portion 6 and the semiconductor light emitting element 4 from the surrounding environment, it is not necessary to attach a separate protective member, and the manufacturing process is further simplified.
  • the application of the semiconductor light-emitting device of the present invention is not particularly limited, and can be applied to various fields where general light-emitting devices are used.
  • a light source for various illumination devices such as an illumination lamp as a substitute for a conventional lamp such as an incandescent lamp and a fluorescent lamp, a thin illumination, and an image such as a liquid crystal display
  • the semiconductor light-emitting device can obtain light of various chromaticities, saturations and luminances, and can ensure excellent color rendering, so that it is suitable as a light source for lighting devices and image display devices. It is.
  • the semiconductor light emitting device of the present invention is excellent in reliability and durability because the fluorescent part and the semiconductor light emitting element are protected by the sealing member, and a long-life semiconductor light emitting device can be obtained. In view of being able to do so, it is suitable as a light source for an illumination device or an image display device.
  • the semiconductor light-emitting device of this invention when using the semiconductor light-emitting device of this invention as a light source of an illuminating device or an image display apparatus, a single semiconductor light-emitting device may be used and a several semiconductor light-emitting device may be used.
  • a single semiconductor light-emitting device may be used and a several semiconductor light-emitting device may be used.
  • the application example at the time of using the semiconductor light-emitting device of this invention as a light source of an illuminating device is demonstrated.
  • Passenger aircraft cabin lights play an important role in the mental stability and alerting of passengers and passengers. That is, it is preferable to obtain illumination light suitable for the physical condition or mental condition of the occupant or passenger, or the surrounding environment by changing the color temperature, chromaticity, brightness, saturation, etc. of the light emitted from the cabin lamp. For example, when passengers get on and off, the ratio of blue is increased to increase tension and brightness, and when relaxing or sleeping, white light with a relatively low color temperature (for example, 2700 K), white at around 3000 K when eating It is preferable to use light and turn on or blink in red when alerting in an emergency or the like.
  • a relatively low color temperature for example, 2700 K
  • the light emitted from the semiconductor light-emitting device of the present invention can change the color temperature, chromaticity, luminance, and saturation in various ways while ensuring good color rendering, so that an illumination device that satisfies such requirements can be obtained. Is possible. Moreover, since the semiconductor light-emitting device of this invention is excellent in reliability and durability as mentioned above, the service fall by the malfunction of a guest room lamp can also be suppressed.
  • an illumination device using the semiconductor light-emitting device of the present invention as a light source is used as a cabin lamp, and can be changed continuously or stepwise from cold color illumination light to white illumination light to warm color illumination light, so that the mental state becomes higher.
  • the illumination light may be changed to the cold color side.
  • the semiconductor light emitting device of the present invention can be used for various display devices of automobiles as well as cabin lights.
  • a semiconductor light-emitting device whose emission color changes in conjunction with the air conditioner in the passenger compartment is provided at the air outlet of the air conditioner, etc., which emits warm color light when the air conditioning temperature is high, and cold color light when the air conditioning temperature is low So that the air conditioning temperature of the air conditioner can be grasped sensuously.
  • the semiconductor light emitting device of the present invention can be used as a display device in which the display color, the color temperature, and the like vary depending on the operating state of the in-vehicle device.
  • the present invention is not limited to the above embodiment, and various modifications can be made without changing the gist of the present invention. It is.
  • the structure of the cavity 5 and the fluorescent part 6 can be changed as follows.
  • modified examples of the structures of the cavity 5 and the fluorescent part 6 will be described with reference to FIGS.
  • symbol is attached
  • a cavity 15 having a flat surface and a substantially rectangular cross section is shown. May be formed. That is, the shape of the cavity 15 is a substantially rectangular parallelepiped shape or a substantially cubic shape. With such a structure, the side surface of the cavity 15 is substantially parallel to the side surface of the semiconductor light emitting element 4, and the bottom surface of the cavity 15 is substantially parallel to the upper and lower surfaces of the semiconductor light emitting element 4.
  • the distance from the side surface and the upper surface of the semiconductor light emitting element 4 to the surface of the cavity 15 is substantially equal, and a fluorescent portion having a uniform thickness is formed around the semiconductor light emitting element 4 (side surface and upper surface).
  • the upper surface of the semiconductor light emitting element 4 is the surface opposite to the surface bonded to the wiring substrate 2, and the lower surface is the surface bonded to the wiring substrate 2.
  • a cavity 25 or 15 having a semi-elliptical cross section may be formed. That is, the shape of the cavity 25 or 15 is a shell shape.
  • a cavity 35 or 15 having a triangular cross-sectional shape may be formed. That is, the shape of the cavity 35 or 15 is conical or pyramidal.
  • a cavity 45 having a rectangular cross-sectional shape may be formed. That is, the shape of the cavity 45 is a columnar shape or a prism shape.
  • the space around the upper surface of the cavity 45 shown in FIG. 22 is larger than the space around the side surface of the semiconductor light emitting element 4 as compared with the cavity 15 shown in FIG. For this reason, in the semiconductor light emitting device 1 shown in FIGS. 22A and 22B, the thickness of the fluorescent portion located around the upper surface of the semiconductor light emitting element 4 is increased, and the thickness of the fluorescent portion located around the side surface is increased. Becomes smaller. 20 and FIG. 22, since the cavity has a vertically long shape, the light emitted from the semiconductor light emitting element is transmitted to the side surface of the cavity (the boundary between the fluorescent part and the sealing member). By reflecting on the surface, the light distribution of the light emitted from the cavity portion can be increased on the upper surface.
  • the side surface of the cavity (the boundary surface between the fluorescent portion and the sealing member) is not perpendicular to the bottom surface. It is possible to prevent total reflection at the boundary surface between the fluorescent part and the sealing member) and improve extraction of light emitted from the cavity part.
  • a fluorescent part 16 having a laminated structure may be formed.
  • the fluorescent part 6 is a single layer, but the fluorescent part 16 is a laminate.
  • a fluorescent part 16 can be obtained by laminating a plurality of layers containing at least one kind or plural kinds of phosphors.
  • the phosphor is contained in each layer uniformly or with a continuous concentration distribution.
  • the order of stacking the phosphor-containing layers is not limited, but a red phosphor-containing layer 16r is provided so as to cover the semiconductor light emitting element 4, and a green phosphor-containing layer 16g is provided so as to cover the red phosphor-containing layer 16r. Is preferably provided, and a blue phosphor-containing layer 16b is provided so as to cover the green phosphor-containing layer 16g, and the blue phosphor-containing layer 16b is in contact with the surface of the cavity.
  • the reason for stacking in this order is that when the phosphor-containing layer whose wavelength after conversion by the phosphor is a short wavelength is arranged on the semiconductor light emitting element 4 side, the light of the wavelength after party conversion is more This is because the phosphor efficiency of the phosphor-containing layer on the surface side (that is, the cavity side) may contribute to excitation of the phosphor, resulting in a decrease in luminous efficiency. Therefore, by using the laminated structure as described above, desired white light can be obtained while maintaining good luminous efficiency.
  • the specific structure of the fluorescent part 16 is not limited to these, and the fluorescent part 16 may be configured using a layer containing a phosphor that converts the wavelength into an arbitrary wavelength region.
  • the film thickness of the fluorescent part 16 (when the phosphor-containing layer is a laminate, the film thickness of the entire laminate) is usually 20 ⁇ m or more, preferably 50 ⁇ m or more, and more preferably 75 ⁇ m or more. Moreover, it is 3000 micrometers or less normally, Preferably it is 2000 micrometers or less, More preferably, it is 1500 micrometers or less. Thereby, the wavelength of light emitted from the semiconductor light emitting element 4 can be efficiently converted.
  • each fluorescent portion 16 is not particularly limited as long as the object and effect of the present invention are not impaired, and is usually selected as appropriate according to the size of the semiconductor light emitting element 4, and among them, the projected area is 5 mm. is preferably 2 or less, more preferably 1 mm 2 or less, more preferably 0.25 mm 2 or less. By setting it to the above value or less, the semiconductor light emitting element 4 can be highly integrated in the semiconductor light emitting device 1 and a large luminous flux can be obtained.
  • the projection area of the fluorescent part 16 referred to in the present invention means an area of a shape in which each fluorescent part 16 is projected from the light extraction surface side of the semiconductor light emitting device 1.
  • the plurality of semiconductor light emitting elements 4 are included in the fluorescent portion 16, it is preferable to increase the size of the fluorescent portion 16 according to the number.
  • the fluorescent part 16 is a sealing member 3 for sealing the semiconductor light emitting element 4 and the wiring substrate 2, and at least a part or all of the light emitted from the semiconductor light emitting element 4. And an inorganic or organic phosphor that converts the wavelength to an arbitrary wavelength.
  • the fluorescent part 16 may contain a thixotropic agent, a refractive index adjusting agent, a light diffusing agent, or the like as necessary.
  • the distance between each fluorescence part 16 is separated so that absorption of the light mutually emitted between adjacent semiconductor light emitting elements may be reduced like the distance between each fluorescence part 6. .
  • the gap between the fluorescent portions is 50 ⁇ m or more, preferably 100 ⁇ m or more, more preferably 200 ⁇ m or more, and preferably 1.5 mm or less from the viewpoint of integration.
  • the semiconductor light emitting element 4 is covered with the fluorescent part containing the phosphor, but the present invention is not limited to such a structure, and other structures may be used.
  • the semiconductor light emitting element 4 may be covered with a covering member 50 that does not contain a phosphor, and the fluorescent portion 6 may be provided so as to cover the covering member 50.
  • the covering member 50 is made of a material that can transmit light emitted from the semiconductor light emitting element 4, and is generally made of a material obtained by removing the phosphor from the fluorescent portion described above. More specifically, the covering member 50 may be a translucent resin such as an acrylic resin, an epoxy resin, a silicone resin, a urethane resin, and a fluororesin.
  • the fluorescent portion 6 is not affected by the heat generated in the semiconductor light emitting element 4, and the light emission characteristics and reliability of the semiconductor light emitting device 1 itself are improved. Can be achieved.
  • the fluorescent part 6 is formed on the covering member 50.
  • the fluorescent part 6 includes a red fluorescent substance containing layer 16r, a green fluorescent substance containing layer 16g, and a blue fluorescent substance containing layer 16b. The portion 16 may be formed.
  • the semiconductor light emitting element 4 is covered with the covering member 50, and the covering member 50 is further covered with the fluorescent portion 6.
  • the present invention is not limited to such a laminated structure.
  • the formation positions of the covering member 50 and the fluorescent part 6 or the fluorescent part 16 may be interchanged. That is, the semiconductor light emitting element 4 may be covered with the fluorescent part 6 or the fluorescent part 16, and the fluorescent part 6 or the fluorescent part 16 may be further covered with the covering member 50.
  • the semiconductor light emitting device of the present invention suppresses uneven color in the emitted light and can adjust the chromaticity, saturation, and luminance of the emitted light in various and easy ways, for example, various illuminations such as an illumination lamp and a thin illumination It can be used as a light source for a device and a light source (backlight, front light, etc.) for an image display device such as a liquid crystal display.
  • various illuminations such as an illumination lamp and a thin illumination It can be used as a light source for a device and a light source (backlight, front light, etc.) for an image display device such as a liquid crystal display.

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Abstract

Cette invention concerne un dispositif électroluminescent à semi-conducteur dont le processus de fabrication peut être simplifié, sans nuire au niveau élevé de la fiabilité et de la longévité, ainsi qu'un procédé de fabrication correspondant. Spécifiquement, cette invention concerne : un dispositif électroluminescent à semi-conducteur équipé d'une carte de circuit imprimé ; une pluralité d'éléments électroluminescents à semi-conducteur montés sur la carte de circuit imprimé et possédant des propriétés électroluminescentes dans une plage de longueurs d'onde spécifiée ; un élément d'étanchéité présentant des caractéristiques de transmission optique spécifiées, qui se présente sous forme de feuille avec une première surface et une seconde surface sur le côté opposé de ladite première surface et qui possède une pluralité de cavités en certains points de la première surface susmentionnées correspondant aux éléments électroluminescents à semi-conducteur susmentionnés ; et des parties fluorescentes comprenant des corps fluorescents disposés dans chacune des cavités susmentionnées et convertissant la longueur d'onde d'au moins une partie de la lumière émise par les éléments électroluminescents à semi-conducteur - chacun desdits éléments étant recouverts par des parties fluorescentes dans les cavités qui leur correspondent- ceci par liaison de la première surface de l'élément d'étanchéité avec une seule surface du circuit imprimé sur laquelle les éléments électroluminescents à semi-conducteur susmentionnés ont été montés. L'invention concerne également un procédé de fabrication correspondant.
PCT/JP2011/059750 2010-04-21 2011-04-20 Dispositif électroluminescent à semi-conducteur et son procédé de fabrication WO2011132716A1 (fr)

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