WO2011078144A1 - 洗浄方法 - Google Patents
洗浄方法 Download PDFInfo
- Publication number
- WO2011078144A1 WO2011078144A1 PCT/JP2010/072955 JP2010072955W WO2011078144A1 WO 2011078144 A1 WO2011078144 A1 WO 2011078144A1 JP 2010072955 W JP2010072955 W JP 2010072955W WO 2011078144 A1 WO2011078144 A1 WO 2011078144A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cleaning
- gas
- liquid
- water
- dissolved
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Definitions
- the present invention relates to a method for effectively cleaning the surface of various objects to be cleaned.
- the cleaning method of the present invention is particularly suitable for cleaning electronic materials (electronic parts, electronic members, etc.) that require a high degree of cleanliness, such as silicon wafers for semiconductors, glass substrates for flat panel displays, and quartz substrates for photomasks. It is suitable for.
- RCA cleaning method In order to remove fine particles, organic substances, metals, etc. from the surface of electronic materials such as silicon wafers for semiconductors, glass substrates for flat panel displays, quartz substrates for photomasks, etc., hydrogen peroxide, which is conventionally called RCA cleaning method Wet cleaning was performed at a high temperature by using a concentrated chemical solution.
- the RCA cleaning method is an effective method for removing metal on the surface of the electronic material.
- the RCA cleaning method uses a large amount of high-concentration acid, alkali, and hydrogen peroxide, so these chemicals are discharged into the waste liquid, and a heavy burden is imposed on neutralization and precipitation in the waste liquid treatment. A large amount of sludge is generated.
- gas-dissolved water prepared by dissolving a specific gas in pure water and adding a trace amount of chemicals as necessary has been used in place of high-concentration chemical solutions. Cleaning with gas-dissolved water can reduce the amount of cleaning water used because there are few problems of drug residue on the object to be cleaned and the cleaning effect is high.
- specific gases used for gas-dissolved water as electronic material cleaning water include hydrogen gas, oxygen gas, ozone gas, rare gas, and carbon dioxide gas.
- high-pressure jet cleaning in which a cleaning liquid is jetted from a nozzle at a high pressure
- two-fluid cleaning in which a cleaning liquid and a gas (carrier gas) are discharged from a two-fluid nozzle are known.
- a good cleaning effect can be obtained by a physical action caused by a droplet of the cleaning liquid discharged from the nozzle colliding with an object to be cleaned at a high speed.
- Patent Document 1 proposes a cleaning method for cleaning an object to be cleaned while irradiating the cleaning liquid with ultrasonic waves using a cleaning liquid in which hydrogen gas is dissolved in ultrapure water and hydrogen peroxide is added. .
- a sufficient cleaning effect can be obtained by high-pressure jet cleaning or two-fluid cleaning, the above-mentioned problems in the case of ultrasonic cleaning can be solved and more cost-effective and resource-saving cleaning can be performed.
- the two-fluid cleaning does not provide a sufficient cleaning effect at present.
- An object of the present invention is to provide a low-cost and resource-saving cleaning method that obtains a high cleaning effect by high-pressure jet cleaning or two-fluid cleaning with gas-dissolved water.
- the present inventors have dissolved this supersaturated dissolved gas in a cleaning liquid used in high-pressure jet cleaning or two-fluid cleaning by dissolving a gas having a saturation solubility or higher.
- the scrubbing effect of the bubbles in addition to the physical cleaning force that is ejected from the nozzle as cleaning droplets, released and grows into active bubbles while acting on the surface to be cleaned, and the cleaning droplets collide with the surface to be cleaned
- the physicochemical cleaning actions such as the impact force of bubble collision and the adsorption force at the gas-liquid interface are affected by sludge substances such as fine particles on the surface of the object to be cleaned and the object to be cleaned. It has been found that the cleaning effect such as the effect is improved.
- the present invention has been achieved on the basis of such knowledge, and the gist thereof is as follows.
- the cleaning fluid discharge nozzle A cleaning method, wherein the cleaning liquid introduced into the liquid contains a dissolved gas having a saturation solubility or higher at the liquid temperature of the cleaning liquid.
- the dissolved gas is one or more selected from the group consisting of nitrogen gas, oxygen gas, carbon dioxide gas, hydrogen gas, ozone gas, clean air, and rare gas. Cleaning method.
- the cleaning liquid contains one or more drugs selected from the group consisting of alkalis, acids, chelating agents, and surfactants. Cleaning method.
- the object to be cleaned can be highly purified by performing resource-saving and low-cost efficient cleaning by high-pressure jet cleaning or two-fluid cleaning using gas-dissolved water. That is, as described above, by dissolving a gas having a saturation solubility or higher in the cleaning liquid, this supersaturated dissolved gas is discharged from the nozzle as cleaning droplets and is released and activated while acting on the surface of the object to be cleaned.
- physicochemical cleaning actions such as bubble scrub effect, bubble collision impact force, gas-liquid interface adsorption force, etc.
- the cleaning object such as fine particles on the surface of the object to be cleaned and the surface of the object to be cleaned is affected, and the cleaning effect such as the effect of removing fine particles by the gas dissolved water is improved.
- the dissolved gas is preferably one or more selected from the group consisting of nitrogen gas, oxygen gas, carbon dioxide gas, hydrogen gas, ozone gas, clean air, and argon gas. These dissolved gases are preferably dissolved with a supersaturation degree of 1 to 5 times the saturation solubility.
- liquid for dissolving the gas it is preferable to use pure water or ultrapure water as the liquid for dissolving the gas.
- This water is preferably degassed in view of gas dissolution efficiency and the like.
- the cleaning liquid used in the present invention may contain one or more kinds of agents selected from the group consisting of alkalis, acids, chelating agents and surfactants. Cleansing effect can be obtained.
- the present invention has a silicon substrate for semiconductors, a glass substrate for flat panel displays, and a quartz substrate for photomasks because of its excellent cleaning effect. It is suitable for cleaning of electronic materials (electronic parts, electronic members, etc.) that require high cleanliness.
- the cleaning liquid used in the present invention (in the present invention, the cleaning liquid refers to a liquid introduced into a cleaning fluid discharge nozzle, which will be described later) includes a dissolved gas having a saturation solubility or higher at the liquid temperature of the cleaning liquid.
- the excellent cleaning effect according to the present invention cannot be obtained.
- the dissolved gas amount of the cleaning liquid is preferably 1 to 5 times, particularly 1 to 3 times, particularly 1.5 to 3 times the saturation solubility.
- saturation the multiple of the dissolved gas amount with respect to the saturation solubility is referred to as saturation, for example, “saturation degree 1” if it is equal to the saturation solubility, “saturation degree 2” if it is twice the saturation solubility, If the amount is 3 times the saturation solubility, it is referred to as “saturation degree 3”.
- the dissolved gas species in the cleaning liquid is not particularly limited, and examples thereof include noble gases such as nitrogen gas, oxygen gas, carbon dioxide gas, hydrogen gas, ozone gas, clean air, and argon gas. Only one of these may be dissolved in the cleaning liquid, or two or more of these may be dissolved in the cleaning liquid. When two or more kinds of gases are dissolved in the cleaning liquid, at least one of them may be higher than the saturation solubility.
- a liquid for dissolving a gas as described above to prepare a cleaning liquid (hereinafter, sometimes referred to as “raw water”), generally, an object to be cleaned can be cleaned to a required cleanliness level. Treated pure water or ultrapure water is used.
- the raw water is preferably degassed water in order to prepare a cleaning solution containing only a specific dissolved gas, and if it is degassed water, the gas is efficiently dissolved to a saturation solubility or higher. It is also preferable in that it can be performed.
- the degree of deaeration is preferably 80% or more, desirably 90% or more.
- raw water degassing is not an essential requirement.
- a deaeration membrane module In the deaeration treatment of raw water, a deaeration membrane module can be usually used as described later.
- the raw water includes alkaline agents such as ammonia, sodium hydroxide, potassium hydroxide and tetramethylammonium hydroxide, acids such as hydrogen fluoride, hydrogen chloride and sulfuric acid, chelating agents and surfactants. It is also possible to increase the cleaning functionality by adding seeds or two or more. In particular, by adding an alkaline agent such as ammonia and adjusting the pH of the cleaning liquid to 7 or more, preferably 9 to 14, the cleaning effect of fine particles and the like can be enhanced. The pH adjustment may be performed using an alkaline agent or an alkaline gas. However, it is preferable to use ammonia that is easy to handle and allows easy concentration control.
- a good cleaning effect can be obtained by using a cleaning solution adjusted to pH 7 to 11 by adding ammonia at 1 mg / L or more, for example, about 1 to 200 mg / L.
- ammonia at 1 mg / L or more, for example, about 1 to 200 mg / L.
- the amount of ammonia added may be 1 to 20 mg / L. Addition of a chemical such as ammonia to the raw water may be after the gas is dissolved or before the gas is dissolved.
- an object to be cleaned is cleaned by high-pressure jet cleaning or two-fluid cleaning using the above-described cleaning liquid.
- the temperature of the cleaning liquid in this high-pressure jet cleaning or two-fluid cleaning can be in the range of 10 to 90 ° C.
- an excellent cleaning effect can be obtained even with a normal temperature cleaning liquid. Therefore, it is preferable that the temperature of the cleaning liquid is normal temperature.
- the following conditions can be adopted as discharge conditions for the cleaning liquid discharged from the cleaning fluid discharge nozzle.
- Cleaning liquid supply amount 0.5 to 30 L / min
- Nozzle hydraulic pressure 5-20MPa
- the gas when performing two-fluid cleaning, one or more of nitrogen gas, oxygen gas, carbon dioxide gas, hydrogen gas, ozone gas, argon gas, air and the like are used.
- the following conditions can be adopted as discharge conditions for the cleaning liquid and carrier gas discharged from the cleaning fluid discharge nozzle.
- Cleaning liquid supply amount 0.05 to 0.5 L / min
- Nozzle hydraulic pressure 0.05 to 0.5 MPa
- Carrier gas pressure 0.1 to 0.6 MPa
- the washing time is usually about 3 to 60 seconds, although it varies depending on the degree of saturation of the used washing liquid, the presence or absence of addition of chemicals, and other washing conditions.
- FIG. 1 is a degassing membrane module
- 2 is a gas dissolution membrane module
- 3 is a chamber
- 4 is a discharge nozzle
- 5 is an object to be cleaned
- 6 is a turntable.
- the object to be cleaned 5 is set on the turntable 6 in the chamber 3.
- the chamber 3 is preferably one that can be exhausted from below. This is to prevent the cleaning fluid discharged from the nozzle 4 from flying up and contaminating the object 5 to be cleaned. By exhausting from below, the rising of the cleaning fluid is suppressed and contamination of the object to be cleaned is prevented. Is prevented.
- a method vacuum chuck in which the inside of the turntable 6 is evacuated and the object 5 is brought into close contact with the turntable 6 is suitable. In this case, a space is formed between the turntable 6 and the contact surface of the object 5 to be cleaned via a spacer made of rubber (for example, polytetrafluoroethylene) to create a vacuum field. Is preferably used.
- the inside of the deaeration membrane module 1 is divided into a liquid phase chamber 1b and a gas phase chamber 1c by a gas permeable membrane 1a.
- the gas dissolution membrane module 2 is also divided into a liquid phase chamber 2b and a gas phase chamber 2c by a gas permeable membrane 2a.
- gas permeable membranes 1a and 2a are not particularly limited as long as they do not allow permeation of water and allow permeation of gas.
- the raw water pipe 11 for supplying raw water is connected to the liquid phase chamber 1b of the degassing membrane module 1.
- the gas phase chamber 1c of the degassing membrane module 1 is connected to the suction port of the vacuum pump 13R via the exhaust pipe 13.
- the vacuum pump 13R is not particularly limited, but is preferably a pump capable of sucking water vapor, such as a water-sealed vacuum pump or a scroll pump having a water vapor removing function.
- the liquid phase chamber 1b of the degassing membrane module 1 and the liquid phase chamber 2b of the gas dissolving membrane module 2 are connected by a degassing water pipe 12.
- a nozzle water supply pipe 14 for supplying gas dissolved water to the discharge nozzle 4 is connected to the liquid phase chamber 2b of the gas dissolving membrane module 2, and a gas supply pipe 15 having a flow rate adjusting valve 15V is connected to the gas phase chamber 2c.
- the gas phase chamber 2c is provided with a pressure gauge 2P.
- the nozzle water supply pipe 14 is provided with a nozzle water supply flow rate adjustment valve 14V and a nozzle water supply pressure gauge 14P.
- a chemical supply pipe 16 having a flow rate control valve 16V is connected to the nozzle water supply pipe 14. As long as it is on the side, it is not limited to this part.
- a carrier gas supply pipe 17 including a flow rate adjusting valve 17V and a pressure gauge 17P is connected to the discharge nozzle 4 together with a nozzle water supply pipe 14, and gas dissolved water and carrier gas are discharged toward the object 5 to be cleaned. It is comprised so that.
- raw water pure water or ultrapure water
- the degassing membrane module via the raw water pipe 11. 1
- the vacuum pump 13R is operated to depressurize the gas phase chamber 1c.
- the dissolved gas dissolved in the raw water in the liquid phase chamber 1 b passes through the gas permeable membrane 1 a and is discharged out of the system via the gas phase chamber and the exhaust pipe 13. In this way, the raw water is degassed.
- the inside of the gas phase chamber 1c is preferably decompressed to 10 kPa or less, particularly 5 kPa or less.
- the dissolved gas is supplied to the gas phase chamber 2 c of the gas dissolving membrane module 2 via the gas supply pipe 15.
- the dissolved gas supply amount is controlled by the flow rate control valve 15V, and the dissolved gas supplied to the gas phase chamber 2c of the gas dissolving membrane module 2 is supplied to the liquid phase chamber 2b through the gas permeable membrane 2a. Dissolved in raw water (deaerated water).
- the dissolution amount may be calculated from the gas supply amount and the water amount, or the concentration may be measured using a densitometer on the secondary side of the gas dissolution membrane module 2. It is easy to control by the value of the pressure gauge 2P for measuring the pressure in the gas phase chamber 2c of the gas dissolution membrane module 2, and it is preferably used.
- the degree of saturation is 1, and when the value of the pressure gauge 2P (gauge pressure) is 0 MPa ( ⁇ 1 atm), the obtained gas dissolved water
- the value of the pressure gauge 2P is 0.1 MPa
- the degree of saturation of the gas-dissolved water is 2
- the value of the pressure gauge 2P is 0.2 MPa
- the degree of saturation of the gas-dissolved water is 3.
- the saturation of the gas dissolved water can be adjusted by the value of the pressure gauge 2P.
- this pressure gauge 2P needs to be lower than the value of the nozzle feed water pressure gauge 14P. That is, the pressure V 1 of the vapor chamber 2c of the gas dissolving membrane module 2 to be measured by the pressure gauge 2P, a water supply pressure V 2 gas dissolved water is measured at the nozzle feed water pressure gauge 14P is, V 1 ⁇ V 2 It is necessary to become a relationship. This is because bubbles are not generated from the gas-dissolved water in the water supply pipe 14 up to the discharge nozzle 4. Therefore, in order to increase the saturation of the gas-dissolved water, it is necessary to increase the water pressure. Although no particular particularly limited to the value of the nozzle feed water pressure V 2, generally about 0.1 ⁇ 1 MPa is preferred, more suitably used is about 0.2 ⁇ 0.6 MPa.
- the gas-dissolved water obtained by dissolving a desired gas in raw water by the gas-dissolving membrane module 2 is adjusted in flow rate by the nozzle water supply flow rate adjusting valve 14V, and sent to the discharge nozzle 4 through the nozzle water supply pipe 14.
- the drug whose drug amount is adjusted by the drug flow rate control valve 14V is injected into the gas-dissolved water through the drug supply pipe 16.
- the chemical injection point is the secondary side of the gas-dissolving membrane module 2, but the injection location is not particularly limited and may be the primary side of the gas-dissolving membrane module 2.
- a filter may be installed in order to increase the cleanliness of the cleaning liquid. There are no restrictions on the location of the filter.
- a cleaning liquid gas-dissolved water or drug-added gas-dissolved water
- a carrier gas is supplied to the discharge nozzle 4 through the carrier gas supply pipe 17 under flow control by the carrier gas flow control valve 17V or pressure control by the pressure gauge 17P.
- the supply pressure of the carrier gas is indicated by a carrier gas supply pressure gauge 17P.
- the carrier gas supply pressure V 3 needs to be higher than the nozzle feed water pressure V 2 (that is, V 3 > V 2 ), and the carrier gas supply pressure V 3 is less than the nozzle feed water pressure V 2. It is preferable that the value be as high as about 1 to 0.2 MPa.
- the cleaning fluid that has become the mixed fluid of the carrier gas and the cleaning liquid at the discharge nozzle 4 is discharged toward the object 5 to be cleaned, and the surface of the object 5 to be cleaned is cleaned.
- Example 1 With the cleaning apparatus shown in FIG. 1, cleaning experiments were conducted using the following contaminated wafers as objects to be cleaned.
- the number of fine particles (fine particles of 0.12 ⁇ m or more) on the wafer surface after contamination was 6000 to 7000 particles / wafer.
- the oxygen gas is saturated with the gas-dissolving membrane module.
- Oxygen gas-dissolved water dissolved so as to be 3 the pressure in the gas phase chamber of the gas-dissolved membrane module was 0.2 MPa (corresponding to a saturation degree of 3) was used.
- the nozzle used for cleaning and other cleaning conditions are as follows.
- Nozzle “Two-fluid nozzle (B1 / 4J-SS + SUN23-SS)” manufactured by Spraying Japan Gas dissolved water supply amount to nozzle: 0.4 L / min
- Nozzle water supply pressure 0.3 MPa
- Carrier gas N 2 gas
- Carrier gas supply pressure 0.4 MPa
- Turntable rotation speed during cleaning 100 rpm
- Cleaning time 10 seconds
- Drying method Nitrogen gas blow Rotary table rotation speed during drying: 1500 rpm Drying time: 30 seconds
- Example 1 the contaminated wafer was cleaned in the same manner except that degassed water before dissolving oxygen gas was used as cleaning water, and the particulate removal rate was examined. The results are shown in Table 1.
- Example 2 In Example 1, the contaminated wafer was cleaned in the same manner except that ammonia was added to oxygen gas-dissolved water so as to have a concentration of 1 mg / L (pH 9.4) as cleaning water, and fine particles were removed. The rate was examined and the results are shown in Table 1.
- Example 2 the contaminated wafer was cleaned in the same manner except that water added with ammonia to a concentration of 1 mg / L in degassed water before dissolving oxygen gas was used as the cleaning water. The removal rate was examined and the results are shown in Table 1.
- Example 3 the contaminated wafer was washed in the same manner except that the gas-phase chamber pressure of the gas-dissolving membrane module was adjusted and the saturation of oxygen gas-dissolved water was set to the values shown in Table 1, and the particulate removal rate The results are shown in Table 1.
- Example 3 the gas-phase chamber pressure of the gas-dissolving membrane module is adjusted so that the dissolved oxygen gas amount of the oxygen gas gas-dissolved water is less than the saturation solubility, The contaminated wafer was cleaned in the same manner except that it was designated as)), and the particulate removal rate was examined. The results are shown in Table 1.
- Example 1 From the comparison between Example 1 and Comparative Example 1, it can be seen that a good cleaning effect can be obtained by two-fluid cleaning by dissolving a carrier gas having a saturation solubility or higher. Further, it can be seen from the comparison between Example 2 and Comparative Example 2 that even when a cleaning agent such as ammonia is used, the cleaning effect is enhanced by dissolving the carrier gas having a saturation solubility or higher.
- the degree of saturation of the gas-dissolved water is preferably 1 to 5, and particularly preferably 1.5 to 3. Even if the degree of saturation exceeds 3, there is no significant difference in the cleaning effect. I understand that.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
即ち、前述の如く、洗浄液に飽和溶解度以上のガスを溶解させておくことにより、この過飽和の溶存ガスが、ノズルから洗浄液滴として吐出されて開放され、被洗浄物表面に作用する間に活性な気泡に成長し、洗浄液滴が被洗浄物表面に衝突する物理的洗浄力に加えて、気泡のスクラブ効果、気泡衝突の衝撃力、気液界面の吸着力などの物理化学的な洗浄作用が、被洗浄物や被洗浄物の表面の微粒子等の汚泥物質に及ぼされることとなり、ガス溶解水による微粒子除去効果などの洗浄効果が向上する。
本発明の洗浄方法の洗浄対象となる被洗浄物としては特に制限はないが、本発明はその優れた洗浄効果から、半導体用のシリコンウェハ、フラットパネルディスプレイ用のガラス基板、フォトマスク用石英基板等、高度な清浄度が要求させる電子材料(電子部品や電子部材等)の洗浄に好適である。
本発明で用いる洗浄液(本発明において、洗浄液とは、後述の洗浄流体吐出ノズルに導入される液をさす。)は、該洗浄液の液温における飽和溶解度以上の溶存ガスを含むものである。
なお、以下において、飽和溶解度に対する溶存ガス量の倍数を飽和度と称し、例えば、飽和溶解度と等量であれば「飽和度1」、飽和溶解度の2倍量であれば「飽和度2」、飽和溶解度の3倍量であれば「飽和度3」と称す。
脱気の程度としては、80%以上、望ましくは90%以上であることが好ましい。
ただし、原水の脱気処理は必須要件ではない。
原水へのアンモニア等の薬剤の添加は、ガスの溶解後であっても溶解前であっても良い。
本発明の洗浄方法では、上述の洗浄液を用いて高圧ジェット洗浄又は二流体洗浄により被洗浄物を洗浄する。
洗浄液供給量:0.5~30L/min
ノズル液圧:5~20MPa
洗浄液供給量:0.05~0.5L/min
ノズル液圧:0.05~0.5MPa
キャリアガス圧:0.1~0.6MPa
以下に、本発明の洗浄方法の実施に好適な洗浄装置の一例を示す図1を参照して、本発明の洗浄方法をより具体的に説明する。
図1において、1は脱気膜モジュール、2はガス溶解膜モジュール、3はチャンバー、4は吐出ノズル、5は被洗浄物、6は回転台を示す。
また、ガス溶解水にアンモニア等の薬剤を添加する場合、このノズル給水配管14に、流量調節弁16Vを備えた薬剤供給配管16が接続されるが、薬剤の添加箇所は、吐出ノズル4の上流側であればよく、この箇所に何ら限定されない。
このとき回転台6を1~500rpm、好ましくは100~300rpm程度で回転させることが好ましく、このようにすることで、被洗浄物5表面を効果的に洗浄することが可能となる。
図1に示す洗浄装置により、以下の汚染ウェハを被洗浄物として洗浄実験を行った。
<被洗浄物>
酸化膜付きアルミナスラリー汚染ウェハ:6インチのシリコンウェハをオゾン水で処理してウェハ表面を親水化した後、アルミナスラリーで汚染させたもの。汚染後のウェハ表面の微粒子数(0.12μm以上の微粒子)は、6000~7000個/ウェハであった。
ノズル:(株)スプレーイングジャパン製「二流体ノズル(B1/4J-SS+SUN23-SS)」
ノズルへのガス溶解水供給量:0.4L/min
ノズル給水圧力:0.3MPa
キャリアガス:N2ガス
キャリアガス供給圧力:0.4MPa
洗浄時回転台回転数:100rpm
洗浄時間:10秒
乾燥方法:窒素ガスブロー
乾燥時回転台回転数:1500rpm
乾燥時間:30秒
実施例1において、酸素ガスを溶解させる前の脱気水を洗浄水として用いたこと以外は同様にして汚染ウェハの洗浄を行い、微粒子除去率を調べ、結果を表1に示した。
実施例1において、酸素ガス溶解水にアンモニアを1mg/Lの濃度(pH9.4)となるように添加したものを洗浄水として用いたこと以外は同様にして汚染ウェハの洗浄を行い、微粒子除去率を調べ、結果を表1に示した。
実施例2において、酸素ガスを溶解させる前の脱気水にアンモニアを1mg/Lの濃度となるように添加した水を洗浄水として用いたこと以外は同様にして汚染ウェハの洗浄を行い、微粒子除去率を調べ、結果を表1に示した。
実施例1において、ガス溶解膜モジュールの気相室の圧力を調整し、酸素ガス溶解水の飽和度を表1に示す値としたこと以外は同様にして汚染ウェハの洗浄を行い、微粒子除去率を調べ、結果を表1に示した。
実施例1において、ガス溶解膜モジュールの気相室の圧力を調整し、酸素ガスガス溶解水の溶存酸素ガス量を飽和溶解度未満とし、飽和溶解度の1/2量(「飽和度1/2」と称す。)としたこと以外は同様にして汚染ウェハの洗浄を行い、微粒子除去率を調べ、結果を表1に示した。
また、実施例2と比較例2の対比から、アンモニア等の洗浄薬剤を用いた場合においても、飽和溶解度以上のキャリアガスを溶解させることにより、洗浄効果が高められることが分かる。
なお、本出願は、2009年12月24日付で出願された日本特許出願(特願2009-292510)に基づいており、その全体が引用により援用される。
Claims (8)
- 洗浄流体吐出ノズルから、洗浄液又は洗浄液と気体との混合流体を被洗浄物に向けて吐出させて該被洗浄物を洗浄する高圧ジェット洗浄又は二流体洗浄方法において、該洗浄流体吐出ノズルに導入される洗浄液が、該洗浄液の液温における飽和溶解度以上の溶存ガスを含むことを特徴とする洗浄方法。
- 請求項1において、前記溶存ガスが、窒素ガス、酸素ガス、炭酸ガス、水素ガス、オゾンガス、清浄空気、及び希ガスよりなる群から選ばれる1種又は2種以上であることを特徴とする洗浄方法。
- 請求項1において、前記洗浄流体吐出ノズルに導入される洗浄液が、該洗浄液の液温における飽和溶解度の1~5倍の溶存ガスを含むことを特徴とする洗浄方法。
- 請求項1において、前記洗浄流体吐出ノズルに導入される洗浄液が、純水又は超純水に前記ガスを溶解させたものであることを特徴とする洗浄方法。
- 請求項1において、前記洗浄流体吐出ノズルに導入される洗浄液が、脱気処理した水に前記ガスを溶解させたものであることを特徴とする洗浄方法。
- 請求項1において、前記洗浄液が、アルカリ、酸、キレート剤及び界面活性剤よりなる群から選ばれる1種又は2種以上の薬剤を含むことを特徴とする洗浄方法。
- 請求項1において、前記洗浄流体吐出ノズルに導入される洗浄液が、該洗浄液の液温における飽和溶解度の2~5倍の酸素ガスを含むことを特徴とする洗浄方法。
- 請求項7において、前記洗浄液はアンモニアを1~200mg/L含有することを特徴とする洗浄方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020127013189A KR101720500B1 (ko) | 2009-12-24 | 2010-12-21 | 세정 방법 |
US13/518,583 US9129797B2 (en) | 2009-12-24 | 2010-12-21 | Cleaning method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-292510 | 2009-12-24 | ||
JP2009292510A JP5585076B2 (ja) | 2009-12-24 | 2009-12-24 | 洗浄方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011078144A1 true WO2011078144A1 (ja) | 2011-06-30 |
Family
ID=44195671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2010/072955 WO2011078144A1 (ja) | 2009-12-24 | 2010-12-21 | 洗浄方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9129797B2 (ja) |
JP (1) | JP5585076B2 (ja) |
KR (1) | KR101720500B1 (ja) |
CN (1) | CN102129957A (ja) |
TW (1) | TWI503181B (ja) |
WO (1) | WO2011078144A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013128912A (ja) * | 2011-12-22 | 2013-07-04 | Shibaura Mechatronics Corp | 処理液の製造装置、製造方法、及び洗浄処理装置 |
JP2017131852A (ja) * | 2016-01-29 | 2017-08-03 | 野村マイクロ・サイエンス株式会社 | 機能水製造装置及び機能水製造方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2856196C (en) | 2011-12-06 | 2020-09-01 | Masco Corporation Of Indiana | Ozone distribution in a faucet |
KR101344921B1 (ko) * | 2012-03-28 | 2013-12-27 | 세메스 주식회사 | 기판처리장치 및 방법 |
JP2014130881A (ja) * | 2012-12-28 | 2014-07-10 | Ebara Corp | 研磨装置 |
KR102188350B1 (ko) * | 2013-12-12 | 2020-12-08 | 세메스 주식회사 | 세정액공급유닛, 이를 가지는 기판처리장치 및 방법 |
US9789448B2 (en) | 2014-01-24 | 2017-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process for treating fluid |
JP6204213B2 (ja) * | 2014-01-28 | 2017-09-27 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP6020626B2 (ja) * | 2015-03-06 | 2016-11-02 | 栗田工業株式会社 | デバイス用Ge基板の洗浄方法、洗浄水供給装置及び洗浄装置 |
CN104785482A (zh) * | 2015-04-20 | 2015-07-22 | 武汉华星光电技术有限公司 | 一种基板清洗方法及装置 |
JP6154860B2 (ja) * | 2015-07-17 | 2017-06-28 | 野村マイクロ・サイエンス株式会社 | 洗浄用水素水の製造方法及び製造装置 |
WO2017112795A1 (en) | 2015-12-21 | 2017-06-29 | Delta Faucet Company | Fluid delivery system including a disinfectant device |
CN105702606B (zh) * | 2016-03-03 | 2019-01-11 | 京东方科技集团股份有限公司 | 一种气液喷雾刻蚀设备及方法 |
JP6745162B2 (ja) * | 2016-08-02 | 2020-08-26 | 野村マイクロ・サイエンス株式会社 | 電子デバイス洗浄用のアルカリ水の製造装置及び製造方法 |
JP2018202350A (ja) * | 2017-06-07 | 2018-12-27 | 大同メタル工業株式会社 | 洗浄液 |
JP7032726B2 (ja) * | 2017-10-11 | 2022-03-09 | 旭サナック株式会社 | 洗浄装置及び洗浄方法 |
JP6955971B2 (ja) * | 2017-11-10 | 2021-10-27 | 株式会社ディスコ | 洗浄ノズル |
CN108642509B (zh) * | 2018-04-08 | 2019-12-20 | 苏州珮凯科技有限公司 | 半导体晶元薄膜制程蚀刻工艺铝件的再生方法 |
WO2020194978A1 (ja) * | 2019-03-26 | 2020-10-01 | 株式会社フジミインコーポレーテッド | 表面処理組成物、その製造方法、表面処理方法および半導体基板の製造方法 |
JP2021048336A (ja) * | 2019-09-20 | 2021-03-25 | 三菱電機株式会社 | 処理液生成方法、処理液生成機構、半導体製造装置及び半導体製造方法 |
CN110965021A (zh) * | 2019-12-26 | 2020-04-07 | 寰采星科技(宁波)有限公司 | 一种金属掩模板堵孔返修方法及装置 |
CN115475794A (zh) * | 2022-10-10 | 2022-12-16 | 安徽光智科技有限公司 | 镜头的清洗方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001345301A (ja) * | 2000-05-31 | 2001-12-14 | Kurita Water Ind Ltd | 電子材料の洗浄方法 |
JP2002151459A (ja) * | 2000-11-10 | 2002-05-24 | Kurita Water Ind Ltd | 洗浄方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4326553A (en) * | 1980-08-28 | 1982-04-27 | Rca Corporation | Megasonic jet cleaner apparatus |
JP3504023B2 (ja) | 1995-05-26 | 2004-03-08 | 株式会社ルネサステクノロジ | 洗浄装置および洗浄方法 |
JP3765354B2 (ja) * | 1997-09-02 | 2006-04-12 | 栗田工業株式会社 | 水素含有超純水の製造方法 |
US6951221B2 (en) * | 2000-09-22 | 2005-10-04 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
US6782900B2 (en) * | 2001-09-13 | 2004-08-31 | Micell Technologies, Inc. | Methods and apparatus for cleaning and/or treating a substrate using CO2 |
JP2004296463A (ja) | 2003-03-25 | 2004-10-21 | Mitsubishi Electric Corp | 洗浄方法および洗浄装置 |
JP2006223995A (ja) * | 2005-02-17 | 2006-08-31 | Sony Corp | 洗浄方法及び洗浄装置 |
TW200703482A (en) | 2005-03-31 | 2007-01-16 | Toshiba Kk | Method and apparatus for cleaning electronic device |
JP5072062B2 (ja) * | 2006-03-13 | 2012-11-14 | 栗田工業株式会社 | 水素ガス溶解洗浄水の製造方法、製造装置及び洗浄装置 |
JP2008080230A (ja) | 2006-09-27 | 2008-04-10 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
US20080156356A1 (en) * | 2006-12-05 | 2008-07-03 | Nikon Corporation | Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method |
JP2008300429A (ja) | 2007-05-29 | 2008-12-11 | Toshiba Corp | 半導体基板洗浄方法、半導体基板洗浄装置、及び液中気泡混合装置 |
KR101525275B1 (ko) | 2007-12-17 | 2015-06-02 | 산요가세이고교 가부시키가이샤 | 전자 재료용 세정제 및 세정 방법 |
-
2009
- 2009-12-24 JP JP2009292510A patent/JP5585076B2/ja not_active Expired - Fee Related
-
2010
- 2010-12-21 KR KR1020127013189A patent/KR101720500B1/ko active IP Right Grant
- 2010-12-21 US US13/518,583 patent/US9129797B2/en not_active Expired - Fee Related
- 2010-12-21 WO PCT/JP2010/072955 patent/WO2011078144A1/ja active Application Filing
- 2010-12-23 TW TW099145532A patent/TWI503181B/zh not_active IP Right Cessation
- 2010-12-23 CN CN2010106091612A patent/CN102129957A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001345301A (ja) * | 2000-05-31 | 2001-12-14 | Kurita Water Ind Ltd | 電子材料の洗浄方法 |
JP2002151459A (ja) * | 2000-11-10 | 2002-05-24 | Kurita Water Ind Ltd | 洗浄方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013128912A (ja) * | 2011-12-22 | 2013-07-04 | Shibaura Mechatronics Corp | 処理液の製造装置、製造方法、及び洗浄処理装置 |
JP2017131852A (ja) * | 2016-01-29 | 2017-08-03 | 野村マイクロ・サイエンス株式会社 | 機能水製造装置及び機能水製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI503181B (zh) | 2015-10-11 |
TW201143905A (en) | 2011-12-16 |
JP2011134864A (ja) | 2011-07-07 |
US20120325927A1 (en) | 2012-12-27 |
US9129797B2 (en) | 2015-09-08 |
KR20120099056A (ko) | 2012-09-06 |
JP5585076B2 (ja) | 2014-09-10 |
CN102129957A (zh) | 2011-07-20 |
KR101720500B1 (ko) | 2017-03-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5585076B2 (ja) | 洗浄方法 | |
JP2012143708A (ja) | 洗浄方法 | |
JP3742451B2 (ja) | 洗浄方法 | |
US20110030722A1 (en) | Cleaning water for electronic material, method for cleaning electronic material and system for supplying water containing dissolved gas | |
WO2014069203A1 (ja) | オゾンガス溶解水の製造方法、及び電子材料の洗浄方法 | |
KR100319119B1 (ko) | 전자재료용세정수 | |
KR19990067948A (ko) | 전자재료용 세정수 | |
JP3940967B2 (ja) | 電子材料用洗浄水の製造方法及び電子材料の洗浄方法 | |
JP4273440B2 (ja) | 電子材料用洗浄水及び電子材料の洗浄方法 | |
TW201600183A (zh) | 元件用Ge基板之洗淨方法,洗淨水供給裝置及洗淨裝置 | |
JPH10107003A (ja) | オゾン水処理装置およびそれを用いた洗浄処理装置 | |
JP4554377B2 (ja) | 洗浄液および洗浄方法 | |
JP6020626B2 (ja) | デバイス用Ge基板の洗浄方法、洗浄水供給装置及び洗浄装置 | |
JP2004296463A (ja) | 洗浄方法および洗浄装置 | |
WO2015189933A1 (ja) | デバイス用Ge基板の洗浄方法、洗浄水供給装置及び洗浄装置 | |
JP5358910B2 (ja) | 炭酸水の製造装置及び製造方法 | |
JP2014225570A (ja) | デバイス用Ge基板の洗浄方法、洗浄水供給装置及び洗浄装置 | |
JP2001345304A (ja) | 電子工業用基板表面の付着物の除去方法及び除去装置 | |
JP4051693B2 (ja) | 電子材料の洗浄方法 | |
JP2002001243A (ja) | 電子材料の洗浄方法 | |
JP3375052B2 (ja) | 電子材料用洗浄水 | |
JPH11176794A (ja) | 電子材料用ウェット洗浄装置 | |
JP2012186348A (ja) | 電子材料用洗浄水、電子材料の洗浄方法及びガス溶解水の供給システム | |
JP2011204958A (ja) | 洗浄方法及び洗浄装置 | |
JP2000225389A (ja) | 水処理装置及び滅菌装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10839374 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20127013189 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13518583 Country of ref document: US |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 10839374 Country of ref document: EP Kind code of ref document: A1 |