WO2011070819A1 - プラズマ点火装置、プラズマ点火方法、およびプラズマ発生装置 - Google Patents

プラズマ点火装置、プラズマ点火方法、およびプラズマ発生装置 Download PDF

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Publication number
WO2011070819A1
WO2011070819A1 PCT/JP2010/062780 JP2010062780W WO2011070819A1 WO 2011070819 A1 WO2011070819 A1 WO 2011070819A1 JP 2010062780 W JP2010062780 W JP 2010062780W WO 2011070819 A1 WO2011070819 A1 WO 2011070819A1
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Prior art keywords
plasma
high voltage
frequency signal
voltage
load electrode
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PCT/JP2010/062780
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English (en)
French (fr)
Japanese (ja)
Inventor
哲弥 歌野
徹 前田
淳一 高平
正典 浜島
Original Assignee
株式会社新川
株式会社東京ハイパワー
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Application filed by 株式会社新川, 株式会社東京ハイパワー filed Critical 株式会社新川
Priority to CN201080055528.9A priority Critical patent/CN102687597B/zh
Priority to SG2012042057A priority patent/SG181572A1/en
Priority to KR1020127015078A priority patent/KR101435903B1/ko
Publication of WO2011070819A1 publication Critical patent/WO2011070819A1/ja
Priority to US13/490,654 priority patent/US8716939B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

Definitions

  • the present invention relates to a plasma ignition device, a plasma ignition method, and a plasma generator.
  • Plasma is used in many production sites. For example, in the field of semiconductor circuit manufacturing, the surface of a semiconductor circuit to be bonded is cleaned with plasma.
  • a wire is arranged on the axis of a glass tube into which argon gas is introduced, and a high-frequency coil and an ignition coil are provided at the tip of the glass tube.
  • a wound device is disclosed (Patent Document 1).
  • high frequency power is supplied from the high frequency power source to the high frequency coil, and then a high voltage is applied to the ignition coil to generate discharge, Plasma is generated.
  • Japanese Patent Laid-Open No. 2003-328138 discloses a plasma ignition mechanism that applies a high voltage from an igniter to a plasma ignition coil including a wire to induce discharge between the plasma ignition coil and the wire to ignite plasma. It is disclosed (Patent Document 2, FIG. 3).
  • Japanese Patent Laid-Open No. 2006-104545 discloses a microplasma in which a plasma torch outer tube through which a mixed gas flows is surrounded by a plasma torch outer tube through which a high melting point conductor is inserted, and discharge is started by an igniter provided outside.
  • a reactor is disclosed (Patent Document 3, FIGS. 1 to 6).
  • Japanese Patent Laid-Open No. 6-215894 discloses a high-frequency plasma power source that supplies high-frequency power between electrodes of a plasma chamber via an impedance matching circuit (Patent Document 4). According to this apparatus, the voltage value supplied to the FET of the power amplifier is set low during the period until the power output impedance matches the impedance of the plasma chamber, thereby preventing the FET from being damaged by the reflected wave.
  • the plasma becomes unstable or disappears when the flow state of the plasma inert gas deteriorates.
  • defects occur in many products such as semiconductor circuits.
  • such a defect may cause inconvenience such as heat generation at a location different from the defective location. If it takes time to notice that the plasma has disappeared, many products will be defective. For this reason, in the plasma generator described in the said patent document, it was necessary to monitor whether the plasma was extinguished. When the plasma disappeared, it had to be reignited manually.
  • the plasma ignition operation since the plasma ignition operation has to be performed in parallel with the high-frequency power application operation, the ignition operation requires a certain level of skill.
  • the present invention provides a plasma ignition technique that can easily and reliably ignite and re-ignite plasma without monitoring or requiring manual labor.
  • a plasma ignition technique that can easily and reliably ignite and re-ignite plasma without monitoring or requiring manual labor.
  • a plasma ignition device matches a high-frequency power supply device that supplies a predetermined high-frequency signal to a load electrode that generates plasma, and impedances of the high-frequency power supply device side and the load electrode side.
  • a matching device, a traveling wave / reflected wave detecting device that detects a traveling wave and a reflected wave of the high-frequency signal, a high voltage generating device that generates a predetermined high voltage, and a ratio of the reflected wave to the traveling wave is first.
  • a control device that superimposes the high voltage on the high-frequency signal when the threshold is greater than 1.
  • the impedance on the load electrode side according to the plasma state at that time is determined.
  • the plasma is not properly generated, mismatching occurs between the output impedance on the matching device side and the impedance on the load electrode side, so that the ratio of the reflected wave to the traveling wave of the high-frequency signal increases.
  • the ratio of the reflected wave to the traveling wave is large to some extent, it can be estimated that the state before ignition or the state where the plasma once ignited disappears for some reason.
  • this ratio is larger than a first threshold value set in advance for estimating the extinction state of the plasma, it is determined that the plasma is not ignited, and a high voltage is superimposed on the high-frequency signal. This high voltage causes a discharge in the load electrode, and the plasma is ignited or re-ignited.
  • the “ratio of the reflected wave to the traveling wave” is usually a ratio of the reflected wave amplitude value to the traveling wave amplitude value, for example, a standing wave ratio (SWR (Standing (Wave Ratio) value). .
  • SWR Standing wave ratio
  • the ignition state of the plasma is determined based on the ratio of the reflected wave to the traveling wave and the ignition operation is executed, the plasma is easily and reliably ignited without monitoring and without manual intervention. Or reignite.
  • FIG. 2 is a flowchart for explaining a plasma ignition method according to the first embodiment.
  • FIG. 3 is a waveform diagram illustrating a plasma ignition method according to the first embodiment.
  • 9 is a flowchart for explaining a plasma ignition method according to a second embodiment. The wave form diagram explaining the plasma ignition method in Embodiment 2.
  • FIG. 9 is a flowchart for explaining a plasma ignition method according to a third embodiment.
  • FIG. 6 is a waveform diagram illustrating a plasma ignition method according to a third embodiment.
  • 9 is a flowchart for explaining a plasma ignition method according to a fourth embodiment.
  • FIG. The flowchart explaining the plasma ignition method of an application example.
  • the block diagram of the plasma generator which concerns on a modification.
  • Embodiment 1 of the present invention superimposes a high voltage on a high-frequency signal when the ratio of the reflected wave to the traveling wave is greater than a predetermined threshold, and after the high voltage is superimposed on the high-frequency signal,
  • the present invention relates to a basic form of a plasma ignition device capable of automatic ignition, which stops superposition of a high voltage when the ratio to is lower than the above threshold.
  • FIG. 1 shows a configuration diagram of a plasma generator including a plasma ignition device in the present embodiment.
  • the plasma generator 1 is disposed to face a cleaning surface of a semiconductor circuit to be cleaned (bonding target), and generates plasma to clean the cleaning surface of the semiconductor circuit. Used for.
  • the plasma generator 1 in this embodiment includes a plasma ignition device 10, a gas chamber 110, a reactance correction coil 111, a ceramic tube 112, a load electrode 114, a ground electrode 116, and a plasma gas supply port 118. Configured.
  • the gas chamber 110 is a gas filling chamber for supplying plasma gas to the ceramic tube 112.
  • an inert gas is preferable. H 2, O 2, N 2 or may be a mixed gas thereof with inert gas.
  • the inert gas argon (Ar), helium (He), xenon (Xe), and neon (Ne) can be used, and argon (Ar) and helium (He) are most often used.
  • Plasma gas is supplied to the gas chamber 110 from a plasma gas supply port 118 by a compressor (not shown), and pressurized to a predetermined atmospheric pressure, for example, from atmospheric pressure to about 3 atmospheric pressure.
  • the plasma gas is supplied to the plasma gas supply port 118 through an arbitrary gas supply system including a gas cylinder, a pressure gauge, a flow meter, and piping.
  • the ceramic tube 112 is a structure made of ceramics, which is an insulating material resistant to high temperatures and high reactivity generated by plasma, and is formed into a predetermined diameter suitable for plasma generation. In addition to ceramics, quartz glass or the like can also be used.
  • the ceramic tube 112 has a ground electrode 116 extending on the axis.
  • the ceramic tube 112 communicates with the gas chamber 110 and is configured such that the pressurized plasma gas inside the gas chamber 110 flows at high speed around the ground electrode 116.
  • a surface (surface to be cleaned of a semiconductor circuit, etc.) to be irradiated with plasma is disposed so as to face the opening (left end surface in FIG. 1) of the ceramic tube 112. Note that a plurality of ceramic tubes 112 may be bundled so that a wide range can be processed (details will be described later as modified examples).
  • the ground electrode 116 is an electrode that is grounded to generate plasma, and is a counter electrode of the load electrode 114.
  • the ground electrode 116 extends along the axis of the ceramic tube 112.
  • the tip of the ground electrode 116 may be located in a range covered by the load electrode 114 or may extend to the vicinity of the tip of the ceramic tube 112 beyond the range covered by the load electrode 114.
  • the ground electrode 116 is made of a metal having a high melting point that can withstand the high temperature of the plasma generated around it, for example, a wire such as platinum or tungsten.
  • the ground electrode 116 is grounded outside through the gas chamber 110.
  • the load electrode 114 is an electrode paired with the ground electrode 116 to which the high-frequency signal HS is applied from the plasma ignition device 10.
  • the load electrode 114 is opposed to a part of the ground electrode so as to surround from the outside of the ceramic tube 112, and is a cross-sectional tube-shaped (annular) electrode in this embodiment.
  • the load electrode 114 is formed of a metal having oxidation resistance, such as stainless steel or a metal imparted with oxidation resistance by plating or the like.
  • the distance between the load electrode 114 and the ground electrode 116 is set based on the relationship between the power of the high frequency signal to be applied and the plasma density to be generated.
  • the load electrode 114 may be formed in a coil shape wound around the ceramic tube 112 in addition to being formed in an annular cross section.
  • the reactance correction coil 111 is an optional component and is a coil element connected to the load electrode 114.
  • the reactance correction coil 111 suppresses the influence of reactance (impedance) generated by the capacitive component existing between the load electrode 114 and the ground potential, and improves the voltage standing wave ratio VSWR described later (that is, brings VSWR closer to 1). To function.
  • the plasma ignition device 10 includes a control device 100, a high frequency power supply device 101, a traveling wave / reflected wave detection device 102, a high voltage generator 103, and a superimposing coil 104. Note that both the high frequency power supply device 101 and the high voltage generation device 104 may be configured as a single device.
  • the alignment device 105 is disposed between the plasma ignition device 10 and the plasma chamber 110.
  • the matching device 105 and the traveling wave / reflected wave detection device 102 may be combined into one device and disposed inside the plasma ignition device 10.
  • the high frequency power supply device 101 is an RF power supply that supplies a predetermined high frequency signal HS to the load electrode 114 that generates plasma.
  • the high frequency signal HS is a signal having a frequency and output suitable for generating plasma.
  • the frequency of the high frequency signal HS suitable for plasma generation is about 10 KHz to about 1 GHz, and the suitable power is about 0.1 W to about 100 W.
  • a high frequency signal having a frequency of 450 MHz and an output of 30 W is used.
  • the high frequency power supply device 101 is configured by an oscillation circuit having an output stage in which a high frequency power transistor and a high frequency transformer are combined. In response to the control signal SHS from the control device 100, the high frequency power supply device 101 starts and stops generating the high frequency signal HS.
  • the matching device 105 is provided on the transmission path between the plasma ignition device 10 and the load electrode 114, and functions to match the impedance between the high frequency power supply device 101 side and the load electrode 114 side.
  • the matching device 105 has a filter circuit structure composed of a coil, a variable capacitor, and the like, and the load impedance when the plasma is stably generated is a characteristic impedance as viewed from the output side of the high frequency power supply device 101. It is designed to be Z 0 (for example, 50 ⁇ ).
  • Z 0 for example, 50 ⁇
  • the load impedance Z of the plasma gas changes abruptly in the process in which the plasma gas generates plasma.
  • the load impedance Z changes rapidly depending on the type, flow rate, pressure, temperature, etc. of the plasma gas.
  • the matching device 105 performs impedance matching between the high-frequency power supply device 101 side and the load electrode 114 side by an impedance matching function, and slightly suppresses the generation of reflected waves.
  • the traveling wave / reflected wave detection device 102 is a device configured to detect a traveling wave of the high-frequency signal HS flowing through the transmission path and a reflected wave reflected from the load electrode 114.
  • the detected physical quantity is the power value or the amplitude (voltage) value of the traveling wave and the reflected wave, but the amplitude value (voltage value) is used to simplify the following description. That is, the traveling wave / reflected wave detection device 102 is configured to be able to detect the traveling wave amplitude value Vf and the reflected wave amplitude value Vr of the high-frequency signal HS, respectively.
  • the voltage standing wave ratio (VSWR) on the load side Is expressed by Equation (1) and Equation (2) using the traveling wave amplitude value Vf and the reflected wave amplitude value Vr.
  • ⁇ (gamma) is a voltage reflection coefficient.
  • the matching device 105 and the traveling wave / reflected wave detection device 102 can be configured as a single device.
  • the matching device 105 is a device for matching impedances in the transmission path from the plasma ignition device 10 to the load electrode 114, it is necessary to arrange the matching device 105 between the output end of the plasma ignition device 10 and the gas chamber 110. It is.
  • the high voltage generation device 103 is a voltage generation circuit that generates a predetermined high voltage HV in response to the control signal SHV from the control device 100.
  • the amplitude value of the high voltage HV is set to a voltage value that gives a sufficient discharge to excite the plasma to the plasma gas as a load.
  • the high voltage generator 103 generates a high voltage HV of about 0.8 kV to 2 kV.
  • the high voltage generator 103 uses a switching element to generate a voltage that is considerably higher than the power supply voltage. Therefore, the high voltage HV is a pulse having a predetermined switching frequency (for example, 1 kHz). Generated as a signal. This pulse signal may be output as a DC voltage smoothed by a capacitor.
  • the superimposing coil 104 has a reactance that has a sufficiently high impedance for the high-frequency signal HS and a sufficiently low impedance for the high voltage HV. For this reason, the superimposing coil 104 functions as an adder for the high-frequency signal HS and the high voltage HV.
  • the coaxial cable 106 is a transmission path having a characteristic impedance Z 0 for supplying the high-frequency signal HS to the load electrode 114.
  • the coaxial cable 106 is connected to each of the matching device 105 and the gas chamber 110 with a connector, and the coating of the coaxial cable 106 is grounded on at least one of the matching device 105 and the gas chamber 110.
  • the control device 100 is configured to be operable as a general-purpose computer including a CPU, RAM, ROM, I / O and the like (not shown).
  • the control device 100 is configured to execute each function according to the plasma ignition method of the present invention by executing a program for executing a predetermined plasma ignition method stored in an internal or external storage medium.
  • the control device 100 transmits a control signal SHS to instruct the high frequency power supply device 101 to start and stop the generation of the high frequency signal HS. It also functions to transmit a control signal S HV and instruct the high voltage generator 103 to start and stop the generation of the high voltage HV.
  • control device 100 receives the traveling wave amplitude value Vf and the reflected wave amplitude value Vr from the traveling wave / reflected wave detection device 102, and based on the above equations (1) and (2), the voltage standing wave ratio VSWR (hereinafter “ (Also referred to as “VSWR value”).
  • the control device 100 may be configured to be able to execute an instruction to a plasma gas supply system (not shown), for example, control of plasma gas supply and supply stop.
  • the control device 100 may use the voltage reflection coefficient ⁇ calculated based on the above equation (2) or the reflected wave amplitude value Vr instead of the VSWR value.
  • the power supplied to the high-frequency signal HS can be changed according to the plasma state.
  • the reflected wave amplitude value Vr also fluctuates in conjunction with it.
  • it is preferable to use a ratio of the reflected wave to the traveling wave for example, a standing wave ratio such as a VSWR value so as not to be affected by the fluctuation of the amplitude value.
  • a program for executing the plasma ignition method of the present invention is stored in the storage medium M and can be distributed.
  • Such storage media M include various types of ROMs, USB memories equipped with flash memories, USB memories, SD memories, memory sticks, memory cards, and physical storage media such as FD, CD-ROM, and DVD-ROM.
  • a transmission medium such as the Internet capable of transmitting the program is also included.
  • the program is stored in advance in the ROM of the control device 100.
  • the control device 100 includes a storage medium reading device (not shown) and reads a program stored in the external storage medium M as shown in FIG. Configured to run.
  • the control device 100 functions to superimpose a predetermined high voltage HV on the high-frequency signal HS when the ratio of the reflected wave to the traveling wave (VSWR value) is larger than a predetermined threshold value Vth. To do. That is, if it is determined that the VSWR value has been detected to some extent, the control device 100 operates to generate the high voltage HV and superimpose the high voltage HV on the high frequency signal HS. In addition, the control device 100 stops superimposing the high voltage HV when the ratio of the reflected wave to the traveling wave (VSWR value) becomes equal to or lower than a predetermined threshold after the high voltage HV is superimposed on the high frequency signal HS. To work.
  • the threshold value for determining the condition for superimposing the high voltage HV and the threshold value for determining the condition for stopping the superposition of the high voltage HV may be different from each other. It shall be the same value. The case where both threshold values are different will be described later in the second embodiment.
  • the load impedance of the plasma generator changes rapidly during the transition period from when the plasma gas is ignited until stable plasma is generated. Since the matching device 105 takes several seconds for the impedance matching operation, the matching device 105 cannot match the impedance in a transient period in which the load impedance continuously varies. During this period, since the impedance is mismatched, a large number of reflected waves are generated, and the VSWR value exceeds a certain level.
  • the threshold value Vth is set to a value that can distinguish the VSWR value at the time when the plasma is unstable and the VSWR value at the time when the plasma is stable. Therefore, by comparing the detected VSWR value with the threshold value Vth, the control device 100 can determine whether or not plasma is stably generated. That is, it is possible to easily identify whether the plasma is effectively generated or disappeared (unstable).
  • the plasma gas is supplied from the plasma gas supply port 118 to the gas chamber 110 under the control of the control device 100 or by the operation of the administrator. Is done.
  • the plasma gas is supplied, the plasma gas filled in the gas chamber 110 flows through the ceramic tube 112 at a predetermined pressure.
  • a plasma ignition instruction is output to the control device 100. The ignition of the plasma gas is instructed by the administrator.
  • the control device 100 may determine the ignition timing of the plasma gas by itself.
  • the control device 100 determines whether or not the system status is a plasma standby state. Whether or not it is in a plasma standby state can be determined by detecting the operation states of flags and various switches stored in the memory of the control device 100. If it is not in the plasma standby state (NO), it returns from the processing loop. If it is in the plasma standby state (YES), the process proceeds to step S11. In step S11, the control device 100 transmits a control signal SHS to the high frequency power supply device 101 to instruct the supply of the high frequency signal HS. In response to the control signal SHS , the high frequency power supply device 101 outputs a high frequency signal HS having a frequency of 450 MHz and an output of 30 W to the transmission path. When the high frequency signal HS is supplied, a high frequency electromagnetic wave is induced between the load electrode 114 and the ground electrode 116.
  • the process proceeds to step S12, and with the supply of the high frequency signal HS, the traveling wave / reflected wave detection device 103 detects the traveling wave amplitude value Vf and the reflected wave amplitude value Vr reflected from the load electrode 114, and the control device 100 Calculates the VSWR value.
  • the load impedance on the load electrode 114 side is set to the same value as the characteristic impedance of the high-frequency power supply device 101 in a state where appropriate plasma is generated.
  • the load impedance on the load electrode 114 side is significantly different from the characteristic impedance Z 0 .
  • the reflected wave amplitude value Vr detected by the traveling wave / reflected wave detector 102 is a large value. Therefore, the VSWR value calculated by the control device 100 is also a relatively large value.
  • times t0 to t1 correspond to the processes of steps S10 to S11.
  • the control device 100 changes the high frequency signal to the ON state, and the high frequency signal HS is applied to the transmission path.
  • the high frequency signal HS is an AC signal having a predetermined amplitude. Initially, since the load impedance does not match the characteristic impedance Z 0 , the VSWR value greatly exceeds the threshold value Vth.
  • step S ⁇ b> 13 the control device 100 determines whether or not the calculated VSWR value is larger than a threshold value Vth for identifying the generation of plasma.
  • the process proceeds to step S14, and the control device 100 transmits a control signal SHV to the high voltage generator 103 to increase the high value. Instructs generation start of voltage HV.
  • the high voltage generator 103 In response to this control signal SHV , the high voltage generator 103 generates a high voltage HV.
  • the generated high voltage HV is supplied to the transmission path via the superposition coil 104 and is superposed on the high frequency signal HS.
  • the high voltage HV When the high voltage HV is superimposed on the high frequency signal HS, the high voltage HV is also applied between the load electrode 114 and the ground electrode 116, and a discharge is generated in the ceramic tube 112. When the discharge occurs, the electrons generated at the ground electrode 116 serve as a seed flame and generate plasma. When the plasma is generated, the plasma is maintained by the high frequency signal HS applied to the load electrode 114. When plasma is stably generated, a plasma jet is ejected from the tip of the ceramic tube 112 and can be used for processing of necessary semiconductor circuits and the like. When plasma is generated, the load impedance on the load electrode 114 side converges toward the characteristic impedance Z 0 .
  • step S13 If the result of determination in step S13 is that the VSWR value is equal to or lower than the threshold value Vth (NO), the process proceeds to step S15, and the control device 100 transmits the control signal SHV to the high voltage generator 103. Instructs to stop the supply of high voltage HV. In response to the control signal SHV , the high voltage generator 103 stops supplying the high voltage HV. Only the high-frequency signal HS is supplied to the transmission path. At this stage, since the plasma is stably generated, the plasma does not disappear even if there is no superposition of the high voltage HV.
  • times t1 to t3 correspond to the steps S13 and S15.
  • the control device 100 changes the high voltage HV to the ON state, and the high voltage HV is superimposed on the high frequency signal HS.
  • the high frequency signal HS becomes an AC signal that increases or decreases with the amplitude of the high frequency signal HS around the high voltage HV.
  • plasma that serves as a fire is generated.
  • Plasma is generated at time t2.
  • the load impedance on the load electrode 114 side converges rapidly toward the characteristic impedance Z 0 .
  • the control device 100 changes the high voltage HV to the OFF state.
  • the superposition of the high voltage HV is stopped, and the high frequency signal HS becomes an AC signal that oscillates around zero volts.
  • the VSWR value converges to a value Vrmin when the plasma is stable.
  • the above processing is control when the plasma is automatically ignited in the plasma standby state, but is also applied when the plasma is reignited when the plasma disappears during the plasma processing.
  • the calculation of the VSWR value (step S12) and the determination of the VSWR value (step S13) are repeated periodically. . Since the calculation and determination of the VSWR value may be repeated after a period of time that does not adversely affect the extinction of the plasma, processing may be performed so as to wait for a certain time in the process of returning from step S14 to step S12. You may comprise so that this waiting time may be suitably changed according to the state of the plasma generator 1.
  • the plasma state becomes unstable, and the plasma disappears at time t5.
  • the program processing shown in FIG. 2 is executed regularly or irregularly regardless of the plasma state. Therefore, it is determined that the VSWR value is greater than the threshold value Vth at a predetermined time, in FIG. 3, at time t6 (S13: YES), and the high voltage HV is superimposed on the high frequency signal HS (S14). Due to the superposition of the high voltage HV, plasma seed is generated at time t7, and plasma is generated. When plasma is generated, the reflected wave decreases.
  • whether or not plasma is generated is determined based on whether or not the VSWR value is larger than the predetermined threshold value Vth.
  • Vth the threshold value
  • the plasma is in a state before being ignited or the plasma once ignited is extinguished for some reason, and the high-frequency signal HS has a high voltage.
  • HV High-frequency signal
  • Embodiment 2 of the present invention relates to the development system of Embodiment 1 described above, and relates to a threshold value (first threshold value) when high voltage supply is started to ignite plasma and high voltage supply.
  • the present invention relates to an embodiment in which a threshold value (second threshold value) for stopping is different.
  • the control device 100 superimposes the high voltage HV on the high frequency signal HS when the VSWR value is greater than the first threshold value Vth1, and after superimposing the high voltage HV on the high frequency signal HS, the VSWR value is When the voltage becomes equal to or lower than the second threshold value Vth2, the high voltage HV operation is stopped.
  • the threshold value Vth used for determination is set to the same value when the high voltage HV is applied to the high frequency signal HS and when the application of the high voltage HV is stopped.
  • the first threshold value Vth1 is used to determine that the plasma is extinguished
  • the second threshold value is used to determine that the plasma has disappeared from the extinguished state.
  • the threshold value Vth2 is used. It is preferable that the first threshold value Vth1 and the second threshold value Vth2 have the following relationship.
  • the plasma When the high voltage HV is superimposed on the high frequency signal HS to ignite the plasma from the state where the plasma is not generated or has disappeared, the plasma is ignited by the discharge and the plasma is generated.
  • the gas state or the like may still be unstable, and the VSWR value may not immediately decrease and may remain near the threshold value Vth.
  • the plasma in such a case may be weak or unstable. If the high voltage HV is applied to the plasma in such a state because the VSWR value happens to exceed the threshold value Vth, the plasma may be extinguished by the impact. In addition, when the plasma is actually extinguished, the VSWR value exceeds the threshold value Vth and the high voltage HV is applied. Therefore, there is a possibility of a so-called hunting state in which the discharge by the high voltage HV and the extinction of the plasma are repeated.
  • the first threshold value Vth1 is used to determine that the plasma is extinguished
  • the second threshold value is used to determine that the plasma is extinguished to the ignition state.
  • the value Vth2 is made different.
  • the flowchart of FIG. 4 is a program process that is repeatedly executed regularly or irregularly as necessary.
  • the same processing numbers as those in the first embodiment are given the same step numbers.
  • step S13b the control device 100 determines whether or not the calculated VSWR value is greater than a first threshold value Vth1 for identifying the generation of plasma. As a result of the determination, if it is determined that the VSWR value is greater than the first threshold value Vth1 (YES), it is confirmed that the plasma is extinguished. Therefore, the process proceeds to step S14, and the control device 100 transmits a control signal SHV to the high voltage generation device 103 to instruct generation start of the high voltage HV. By this process, plasma is generated by the high frequency signal HS supplied between the load electrode 114 and the ground electrode 116.
  • step S13b when the VSWR value becomes equal to or less than the first threshold value Vth1 (NO), the control device 100 proceeds to step S13c, and further the VSWR value becomes the second threshold value Vth2. It is determined whether or not: As a result, when it is determined that the VSWR value is equal to or lower than the second threshold value Vth2 (YES), it can be determined that the extinguished plasma is stably ignited. Then, it transfers to step S15 and the control apparatus 100 transmits the control signal SHV to the high voltage generator 103, and instruct
  • step S13c when the VSWR value is larger than the second threshold value Vth2 (NO), it cannot be said that the plasma is stably ignited, because the plasma is weak or unstable.
  • the control device 100 returns to the calculation of the VSWR value in step S12 and continues superimposing the high voltage HV.
  • the processing may be performed so as to wait for a certain time after the superposition of the high voltage HV starts (step S14), as in the first embodiment. You may comprise so that this waiting time may be suitably changed according to the state of the plasma generator 1.
  • FIG. 1
  • times t0 to t2 correspond to the steps S10 to S13b, S13c, and S14.
  • the control device 100 changes the high frequency signal to the ON state, and the high frequency signal HS is applied to the transmission path. If it is determined that the VSWR value is greater than the first threshold value Vth1 at time t1, the control device 100 changes the high voltage HV to the ON state, and the high voltage HV is superimposed on the high-frequency signal HS. When high voltage HV is applied, plasma that serves as a fire is generated. Plasma is generated at time t2.
  • the load impedance on the load electrode 114 side converges rapidly toward the characteristic impedance Z 0 , and the reflected wave amplitude values Vr and VSWR values reflected from the load electrode 114 also decrease.
  • the control device 100 changes the high voltage HV to the OFF state. The superposition of the high voltage HV is stopped, and the VSWR value converges to a value Vrmin when the plasma is stable.
  • Plasma reignition is similarly programmed. It is assumed that a problem occurs in the plasma gas supply at time t4 in FIG. 5, the plasma state becomes unstable, and the plasma disappears at time t5. The extinction of this plasma is determined by the fact that the VSWR value is larger than the first threshold value Vth1 at time t6.
  • the same effect as that of the first embodiment is obtained, and the high voltage HV is supplied when the VSWR value is larger than the first threshold value Vth1. . Further, when the VSWR value is equal to or lower than the second threshold value Vth2 which is smaller than the first threshold value Vth1, the supply of the high voltage HV is stopped. Therefore, it is possible to reliably detect that the plasma is extinguished and that the plasma is extinguished from the ignition state, thereby enabling stable ignition control of the plasma.
  • the third embodiment of the present invention relates to the development system of the first embodiment, and when the VSWR value is larger than the predetermined threshold value Vth even after the first time has elapsed since the high voltage was superimposed on the high frequency signal.
  • the present invention relates to a mode for outputting a predetermined alarm signal and stopping superposition of a high voltage. In this embodiment, it is determined that the plasma is abnormal when the plasma is not ignited for a long time.
  • the configurations of the plasma generator 1 and the plasma ignition device 10 according to the third embodiment are the same as those of the first embodiment, description thereof is omitted. However, it differs from the first embodiment in that the program processing of the control device 100 corresponds to the flowchart of FIG.
  • the control device 100 outputs a predetermined alarm signal when the VSWR value is greater than the threshold value Vth even after the first time T1 has elapsed since the high voltage HV was superimposed on the high frequency signal HS.
  • the operation is performed so that the supply of the high-frequency signal and the supply of the plasma gas are stopped, and the superposition of the high voltage HV is stopped.
  • the high voltage HV is continuously superimposed.
  • plasma may not be generated indefinitely due to failure of the high frequency power supply device 101 or the high voltage generator 103. Further, no plasma is generated even when the plasma gas flow rate or pressure fluctuates due to defects in the plasma supply system. Therefore, in the third embodiment, if stable generation of plasma cannot be detected even after a lapse of a certain time, it is determined that there is an abnormal state.
  • the flowchart of FIG. 6 is a program process that is repeatedly executed periodically or irregularly as necessary.
  • the same processing numbers as those in the first embodiment are given the same step numbers.
  • the determination of the plasma standby state (S10), the supply of the high frequency signal HS (S11), the calculation of the VSWR value (S12), the comparison between the VSWR value and the threshold value Vth (S13), and the VSWR value is the threshold value Vth.
  • Each process of the high voltage superimposition (S14) in the case where it is larger and the high voltage superposition stop (S15) in the case where the VSWR value is equal to or smaller than the threshold value Vth are the same as those in the first embodiment.
  • step S16 is executed in the third embodiment.
  • the control device 100 determines whether or not the elapsed time T from when the superposition of the high voltage HV is started is greater than a first time T1 that is a threshold time for abnormality determination.
  • the first time T1 is set to a time length that is expected to surely generate plasma after high voltage superposition if the plasma gas is supplied normally.
  • the process proceeds to step S17, and the control device 100 outputs processing for abnormality determination, for example, an alarm signal.
  • step S18 the control device 100 stops the supply of the high frequency signal HS and the supply of the plasma gas. And it transfers to step S15 and superimposition of the high voltage HV is stopped.
  • the output of the alarm signal display on a display device, lighting of an alarm lamp, pronunciation of an alarm buzzer, and the like can be considered.
  • step S16 if it is determined that the elapsed time from the start of superposition of the high voltage HV has not passed the first time T1 (NO), it is within the normal plasma ignition waiting time range. It returns to the calculation of VSWR value (S12).
  • times t10 to t11 correspond to the processes of steps S10 to S13.
  • the control device 100 changes the high frequency signal to the ON state, and the high frequency signal HS is applied to the transmission path. If it is determined at time t11 that the VSWR value is larger than the threshold value Vth, the control device 100 changes the high voltage HV to the ON state, and the high voltage HV is superimposed on the high frequency signal HS.
  • any abnormality occurs, plasma that serves as a fire is not generated even when a high voltage HV is applied, or plasma is not stably generated even if a plasma that serves as a fire is generated.
  • the load impedance does not converge, and time elapses while the VSWR value exceeds the threshold value Vth for detecting the stable generation of plasma.
  • the control device 100 determines that an abnormal state has occurred. Then, the high frequency signal and high voltage superposition are turned off, and an alarm signal is output.
  • the same effect as in the first embodiment can be obtained, and the VSWR value can be increased even if the first time T1 elapses after the high voltage HV is superimposed. If it is larger than the threshold value Vth, it is determined that the state is abnormal, and an alarm signal is output. Therefore, it is possible to reliably detect a problem that has occurred in the plasma generation apparatus 1 and notify the administrator of the necessity for maintenance.
  • Embodiment 4 of the present invention relates to the development system of Embodiment 1 described above, and when the VSWR value is larger than the predetermined threshold value Vth even after the second time has elapsed since the high voltage was superimposed on the high frequency signal.
  • the present invention relates to a mode of changing a voltage value of a high voltage.
  • the high voltage to be applied is changed when the plasma is not ignited for a certain time.
  • the configurations of the plasma generator 1 and the plasma ignition device 10 according to the fourth embodiment are the same as those of the first embodiment, description thereof is omitted. However, it differs from the first embodiment in that the program processing of the control device 100 corresponds to the flowchart of FIG.
  • control device 100 determines the voltage of the high voltage HV if the VSWR value is greater than the threshold value Vth even after the second time T2 has elapsed since the high voltage HV was superimposed on the high frequency signal HS. Works to change the value.
  • the high voltage HV superimposed on the high frequency signal HS is not changed.
  • the voltage value of the high voltage HV applied to the high-frequency signal HS may be different, so that discharge is likely to occur. Therefore, in the fourth embodiment, when plasma is not generated even after the second time T2 has elapsed, control is performed to change the voltage value of the high voltage HV to be superimposed.
  • a case where processing is performed so that the voltage value of the high voltage HV is increased stepwise is illustrated.
  • FIG. 8 shows program processing that is repeatedly executed regularly or irregularly as necessary.
  • the same processing numbers as those in the first embodiment are given the same step numbers.
  • the determination of the plasma standby state (S10), the supply of the high frequency signal HS (S11), the calculation of the VSWR value (S12), the comparison between the VSWR value and the threshold value Vth (S13), and the VSWR value is the threshold value Vth.
  • Each process of the high voltage superimposition (S14) in the case where it is larger and the high voltage superposition stop (S15) in the case where the VSWR value is equal to or smaller than the threshold value Vth are the same as those in the first embodiment.
  • step S19 is executed in the fourth embodiment.
  • the control device 100 determines whether or not the elapsed time T from when the superposition of the high voltage HV is started is longer than a second time T2 that is a threshold value for changing the voltage value.
  • the second time T2 is set to be shorter than the time length (first time T1 in the third embodiment) in which plasma is surely generated after high voltage superposition if the plasma gas is supplied normally. It is set according to how many step voltage values are changed.
  • step S20 the control device 100 outputs a control signal SHV to the high voltage generation device 103, and gives an instruction to increase the voltage value of the superimposed high voltage HV by a predetermined step (for example, ⁇ V).
  • step S14 the high voltage generator 103 generates the high voltage HV with the instructed voltage value and superimposes it on the high frequency signal HS.
  • step S19 the first time T is compared with the second time T2 from the time when the superposition of the high voltage HV is started, but after the second time, the voltage value of the previous high voltage HV is changed.
  • the elapsed time T is compared with the second time T2. That is, every time the second time T2 elapses, the internal timer that measures the elapsed time is reset.
  • times t20 to t21 correspond to the processes of steps S10 to S13.
  • the control device 100 changes the high frequency signal to the ON state, and the high frequency signal HS is applied to the transmission path. If it is determined at time t21 that the VSWR value is larger than the threshold value Vth, the control device 100 changes the high voltage HV to the ON state, and the high voltage HV1 (initial value) is superimposed on the high frequency signal HS.
  • the first time T1 is longer than the second time T2 and equal to the time from time t21 to time t24.
  • the voltage value of the high voltage HV superimposed on the high-frequency signal HS is further increased by step ⁇ V. Changed to If plasma is generated at time t24 by the changed high voltage HV3, the VSWR value converges and becomes equal to or lower than the threshold value Vth, and as a result, superposition of the high voltage HV is stopped.
  • the same effect as that of the first embodiment is obtained, and the voltage value of the high voltage HV to be superimposed is changed every time the second time T2 elapses. Therefore, the plasma can be reliably ignited even if the state of the plasma gas fluctuates.
  • the above first to fourth embodiments are not exclusive embodiments, and a plurality of embodiments can be arbitrarily combined and applied.
  • the flowchart shown in FIG. 10 shows an application example in which all of the first to fourth embodiments are reflected. According to this application example, it is possible to provide a plasma ignition method that has all the characteristic effects of the second to fourth embodiments in addition to the advantageous effects of the first embodiment.
  • the plasma generator 1 has been illustrated as having a single ceramic tube 112.
  • the present invention may be a device that generates plasma using a plurality of ceramic tubes. Good.
  • FIG. 11 shows a configuration diagram of a plasma generator 1b including a plurality of ceramic tubes 112.
  • the same components as those in the first embodiment (FIG. 1) are denoted by the same reference numerals.
  • the plasma generator 1b includes a plasma ignition device 10, a gas chamber 110b, a reactance correction coil 111, a ceramic tube 112, a load electrode 114b, a frame 115, a ground electrode 116b, and a plasma gas supply port 118.
  • this modification is characterized in that a plurality of ceramic tubes 112 are provided.
  • the gas chamber 110b is a gas filling chamber for supplying plasma gas in the same manner as the gas chamber 110 of the first embodiment, but is different in that it includes a frame 113 provided with a plurality of ceramic tubes 112.
  • the frame 113 is made of a conductor and is a plate-like body provided with a holding hole for penetrating and holding the ceramic tube 112. Each holding hole is formed to the same extent as the outer diameter of the ceramic tube so that the ceramic tube 112 can be held.
  • the plurality of ceramic tubes 112 are held by the frame 113 such that each opening faces the cleaning surface S.
  • the load electrode 114b is made of a conductor such as brass, and is a plate-like body provided with an insertion hole through which the ceramic tube 112 held by the frame 113 is inserted.
  • Each insertion hole is formed to be slightly larger than the outer diameter of the ceramic tube 112.
  • the load electrode 114b is electrically connected to the coaxial cable 106 via the reactance correction coil 111 so that the high-frequency signal HS output from the plasma ignition device 10 and the matching device 105 is supplied. It has become.
  • a shield cover 115 is provided so as to surround a part of the ceramic tube 112 and the load electrode 114b.
  • the shield cover 115 is made of a conductor and is configured to shield electromagnetic waves generated from the load electrode 114b.
  • a plurality of ground electrodes 116 b are provided along the axis of each ceramic tube 112. The configurations and operations of the plasma ignition device 10 and the alignment device 105 are the same as those in the first to fourth embodiments.
  • the plasma generator 1b of the above modification when plasma gas is supplied to the plasma gas supply port 118 and a high voltage HV is supplied from the plasma ignition device 10 to the load electrode 114b, plasma is generated by discharge. Will occur. Furthermore, the plasma is stably maintained by supplying the high frequency signal HS from the plasma ignition device 10.
  • the plurality of ceramic tubes 112 are configured to be able to emit a plasma jet toward the cleaning surface S. Therefore, processing (cleaning) by plasma jet can be performed over a wide range.
  • the plasma ignition method of the present invention can also be applied to the plasma generator 1b having such a configuration.
  • the plasma ignition device and the plasma ignition method of the present invention can be applied in an environment where it is desired to automatically perform ventilation in a closed space without manual operation.
  • the present invention can be applied as an appropriately combined example or an application example with changes or improvements according to the application or purpose, and can be applied to the examples and application examples described through the embodiments of the present invention. It is not limited. Examples and application examples appropriately combined according to the use or purpose also belong to the technical scope of the present invention without departing from the subject of the present invention.
  • SYMBOLS 1 Plasma generator, 10 ... Plasma ignition device, 100 ... Control apparatus, 101 ... High frequency power supply device, 102 ... Traveling wave / reflected wave detection device, 103 ... High voltage generator, 104 ... Superposition coil, 105 ... Matching device, 106: Coaxial cable, 110, 110b ... Gas chamber, 111 ... Reactance correction coil, 112 ... Ceramic tube, 114, 114b ... Load electrode, 115 ... Shield cover, 116, 116b ... Ground electrode, 118 ... Plasma gas supply port, HS ... high frequency signal, HV ... high voltage, HV1 ... high voltage, HV2 ... high voltage, HV3 ...

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SG2012042057A SG181572A1 (en) 2009-12-10 2010-07-29 Plasma ignition system, plasma ignition method, and plasma generating apparatus
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EP2728254A1 (en) 2012-11-02 2014-05-07 Hans-Bernd Rombrecht Ignition and stabilisation burner for particulate fuels
CN106470522A (zh) * 2016-09-07 2017-03-01 电子科技大学 一种放电条纹自适应的等离子体射频电源装置
CN108057949A (zh) * 2016-11-07 2018-05-22 株式会社达谊恒 等离子电弧焊接的起弧控制方法
JP2018079500A (ja) * 2016-11-18 2018-05-24 株式会社ダイヘン プラズマアーク溶接のアークスタート制御方法

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SG181572A1 (en) 2012-07-30
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CN104735894B (zh) 2018-04-24
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US20120280618A1 (en) 2012-11-08
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