WO2011034075A1 - Carte de circuit céramique et procédé de fabrication associé - Google Patents

Carte de circuit céramique et procédé de fabrication associé Download PDF

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Publication number
WO2011034075A1
WO2011034075A1 PCT/JP2010/065914 JP2010065914W WO2011034075A1 WO 2011034075 A1 WO2011034075 A1 WO 2011034075A1 JP 2010065914 W JP2010065914 W JP 2010065914W WO 2011034075 A1 WO2011034075 A1 WO 2011034075A1
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WIPO (PCT)
Prior art keywords
circuit board
brazing material
ceramic
copper
phase
Prior art date
Application number
PCT/JP2010/065914
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English (en)
Japanese (ja)
Inventor
寛正 加藤
Original Assignee
株式会社 東芝
東芝マテリアル株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社 東芝, 東芝マテリアル株式会社 filed Critical 株式会社 東芝
Priority to EP10817188.5A priority Critical patent/EP2480052B1/fr
Priority to PL10817188T priority patent/PL2480052T3/pl
Priority to EP17185117.3A priority patent/EP3273755B1/fr
Priority to JP2011531941A priority patent/JP5637992B2/ja
Publication of WO2011034075A1 publication Critical patent/WO2011034075A1/fr
Priority to US13/418,813 priority patent/US8785785B2/en
Priority to US14/306,887 priority patent/US9101065B2/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061—Etching masks
    • H05K3/062—Etching masks consisting of metals or alloys or metallic inorganic compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • C—CHEMISTRY; METALLURGY
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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
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    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
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    • C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
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    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
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    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C04B2237/127—The active component for bonding being a refractory metal
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
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    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
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    • C04B2237/366—Aluminium nitride
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    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
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    • C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/88—Joining of two substrates, where a substantial part of the joining material is present outside of the joint, leading to an outside joining of the joint
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01—Tools for processing; Objects used during processing
    • H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
    • H05K2203/013—Inkjet printing, e.g. for printing insulating material or resist
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03—Metal processing
    • H05K2203/0392—Pretreatment of metal, e.g. before finish plating, etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/0465—Shape of solder, e.g. differing from spherical shape, different shapes due to different solder pads
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0502—Patterning and lithography
    • H05K2203/0545—Pattern for applying drops or paste; Applying a pattern made of drops or paste
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12—Using specific substances
    • H05K2203/125—Inorganic compounds, e.g. silver salt
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/16—Inspection; Monitoring; Aligning
    • H05K2203/167—Using mechanical means for positioning, alignment or registration, e.g. using rod-in-hole alignment
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H05K3/202—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using self-supporting metal foil pattern
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3485—Applying solder paste, slurry or powder
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths

Definitions

  • the embodiment of the present invention relates to a ceramic circuit board and a manufacturing method thereof, and is particularly suitable for a power module or the like that requires high reliability.
  • a ceramic-metal bonded circuit board is widely used in which a high thermal conductive ceramic substrate is used and a metal plate such as copper or aluminum is bonded to the ceramic substrate.
  • the high thermal conductive ceramic substrate a silicon nitride or aluminum nitride substrate having high thermal conductivity and high electrical insulation is used, and a ceramic-metal bonded circuit board bonded to a metal plate using an active metal brazing material containing Ag—Cu is used. Widely used.
  • a metal plate it is common to use copper which is more excellent in electrical conductivity and heat conductivity than aluminum. Copper has a higher yield stress than aluminum and has a large difference in thermal expansion with ceramics. As the copper plate becomes thicker, the thermal cycle resistance and thermal shock resistance of the ceramic-metal junction circuit board decrease. Further, since cracks are easily generated in the ceramic substrate, there is a problem that reliability is lowered.
  • Patent Documents 1 and 2 improve the reliability by relaxing the stress concentration at the end face portion of the copper circuit board generated in the ceramic substrate by causing the brazing material layer to protrude outward from the copper circuit board.
  • a predetermined circuit pattern is formed on a copper circuit board for mounting and connecting semiconductor elements.
  • This circuit pattern requires high definition with respect to position and shape, and in order to obtain a high definition pattern, a method of forming a circuit pattern by etching after bonding a single copper plate to a ceramic substrate is generally used. It has been.
  • the brazing filler metal layer that protrudes outside the copper circuit board when the brazing filler metal layer that protrudes outside the copper circuit board is provided, when the protruding portion and the circuit pattern are formed by etching, voids are generated in the brazing filler metal layer protruding from the copper circuit board.
  • the present inventor has a problem in that uniform dispersion of thermal stress that reduces stress concentration at the end of the copper circuit board that can be expected by protruding the material layer does not occur, and cracking of the ceramic substrate is likely to occur.
  • Embodiments of the present invention have been made in view of such technical problems, and provide a ceramic circuit board having a brazing material protruding portion with few defects due to voids and the like, and an improved heat resistance cycle, and a method for manufacturing the same.
  • the purpose is to do.
  • a ceramic circuit board including a ceramic substrate, a copper circuit board, and a brazing material protruding portion.
  • the copper circuit board is joined to at least one surface of the ceramic substrate via a brazing material layer containing Ag, Cu, and Ti.
  • the brazing material protrusion is formed of a brazing material layer that protrudes outward from the side surface of the copper circuit board.
  • the total of the Ti phase and the TiN phase in the brazing material protruding portion is 3% by mass or more, and is different from the total amount of the Ti phase and the TiN phase in the brazing material layer interposed between the ceramic substrate and the copper circuit board.
  • the number of voids having an area of 200 ⁇ m 2 or less per piece in the protruding portion of the brazing material is 1 or less (including 0).
  • a method for manufacturing a ceramic circuit board includes a step of performing a first masking on a portion other than a region serving as a copper circuit pattern and a brazing material protrusion on the ceramic substrate; Forming a brazing filler metal layer containing Ag, Cu and Ti in a region not subjected to the first masking; Placing a copper plate on the brazing material layer and joining the ceramic substrate and the copper plate by heating; Applying a second mask to the copper circuit pattern on the copper plate; Forming a copper circuit pattern by etching.
  • the embodiment of the present invention it is possible to provide a ceramic circuit board having a protruding portion of brazing material with few defects due to voids and the like and having an improved heat resistance cycle, and a method for manufacturing the same.
  • the ceramic circuit board according to the first embodiment includes a ceramic substrate, a copper circuit board bonded to at least one surface of the ceramic substrate via a brazing material layer, and a brazing material layer protruding outward from the side surface of the copper circuit board.
  • the formed brazing material protrudes.
  • the brazing material layer is formed from a brazing material containing Ag, Cu, and Ti.
  • the present inventors have made the total of the Ti phase and the TiN phase in the brazing filler metal protruding part 3 mass% or more, and the total amount is a brazing filler metal layer (hereinafter referred to as a bonding layer) interposed between the copper circuit board and the ceramic substrate.
  • the total amount of the Ti phase and TiN phase in), and further, the number of voids having an area per piece of 200 ⁇ m 2 or less in the protruding portion of the brazing material is 1 or less (including 0), It has been found for the first time that a highly reliable ceramic-metal bonded circuit board can be realized because the thermal stress due to the thermal expansion difference between the copper circuit board and the electronic component is alleviated and bonding defects are extremely reduced.
  • the boundary between the bonding layer and the ceramic substrate or the copper circuit board is determined by the distribution of Ag, and the boundary is determined with the portion where Ag is present as the bonding layer.
  • the number of voids having an area of 200 ⁇ m 2 or less per piece can be obtained, for example, by measuring voids in a cross section having an area of 200 ⁇ m 2 in the protruding portion of the brazing material.
  • the sum of the Ti phase and the TiN phase in the brazing filler metal is larger than the total amount of the Ti phase and the TiN phase in the bonding layer. Thereby, the effect which relieves a thermal stress can be enlarged more.
  • the total of the Ti phase and TiN phase in the brazing filler metal is 3% by mass or more and 40% by mass or less. If the total of the Ti phase and the TiN phase exceeds 40% by mass, the Ti phase and the TiN phase will increase excessively, and the brazing filler metal will become hard, leading to a decrease in thermal cycle characteristics (TCT characteristics).
  • TCT characteristics thermal cycle characteristics
  • the total amount of Ti phase and TiN phase in the brazing filler metal layer can be measured by, for example, electron probe microanalysis (EPMA) or energy dispersive X-ray diffraction (EDX).
  • EPMA electron probe microanalysis
  • EDX energy dispersive X-ray diffraction
  • the brazing filler metal layer is composed of a brazing filler metal composed of Ag: 90 to 50% by weight, element consisting of Sn and / or In: 5 to 15% by weight, Ti: 0.1 to 6% by weight, remaining Cu and inevitable impurities. It is preferable to form by using. A sufficient effect can be obtained with this composition. In particular, the Ti content is preferably 2 to 5% by weight.
  • the above composition is a brazing material composition before being applied to and printed on the ceramic substrate, and the composition of the bonding layer after bonding varies depending on the active metal bonding step (heat treatment) performed after the coating and printing step.
  • the protruding length of the brazing material protruding portion is preferably 0.01 mm or more and 30% or less of the distance between the copper circuit boards. By setting the protruding length to 0.01 mm or more, it is possible to sufficiently obtain the stress concentration relaxation effect by the brazing material protruding portion. By setting the protruding length to 30% or less of the interval between the copper circuit boards, it is possible to ensure electrical insulation between the copper circuit boards and to cope with fine patterning. A more preferable range of the protruding length is 0.01% or more and 20% or less of the distance between the copper circuit boards.
  • the ceramic substrate can be formed from, for example, silicon nitride (Si 3 N 4 ), aluminum nitride (AlN), or alumina (Al 2 O 3 ).
  • Si 3 N 4 silicon nitride
  • AlN aluminum nitride
  • Al 2 O 3 alumina
  • a silicon nitride substrate is preferable because a ceramic circuit substrate excellent in both thermal cycle characteristics and thermal shock resistance can be obtained.
  • the silicon nitride (Si 3 N 4 ) substrate is preferably a substrate having a thermal conductivity of 80 W / m ⁇ K or more and a three-point bending strength of 600 MPa or more.
  • Aluminum nitride (AlN) preferably has a thermal conductivity of 150 W / m ⁇ K or more and a three-point bending strength of 400 MPa or more.
  • the alumina (Al 2 O 3 ) substrate preferably has a thermal conductivity of 20 W / m ⁇ K or more and a three-point bending strength of 400 MPa or more.
  • the copper circuit board is made of copper or a copper alloy.
  • the thickness of the copper circuit board is preferably 0.25 mm or more. This is because as the thickness of the copper circuit board increases, the stress generated at the ceramic substrate and the end of the copper circuit board increases, so that the brazing material needs to be relieved by the protruding portion.
  • the thickness of the copper circuit board is more preferably 0.25 mm or more and 0.8 mm or less. When the thickness of the copper circuit board exceeds 0.8 mm, the stress generated between the electronic component mounted on the copper circuit board by soldering and the copper circuit board increases, so the effect of the brazing material protrusion is sufficient. There is a risk that it will not be obtained.
  • the ceramic substrate is made of silicon nitride, aluminum nitride, or alumina, and the thickness of the copper circuit board is 0.25 mm or more.
  • the manufacturing method of the second embodiment is shown as an example.
  • the method of the second embodiment includes a step of applying a first masking to a portion other than the copper circuit pattern and the brazing material protruding portion on the ceramic substrate, Forming a brazing material layer by applying or printing a brazing material containing Ag, Cu and Ti in a region where the first masking is not performed; Placing a copper plate on the brazing material layer and joining the ceramic substrate and the copper plate by heating; Applying a second mask to the copper circuit pattern on the copper plate; Forming a copper circuit pattern by etching.
  • a first masking 2 is performed on the ceramic substrate 1.
  • the first masking 2 is formed in a portion other than the region 3 which becomes the copper circuit pattern and the brazing material protruding portion.
  • the brazing material protruding portion With hydrofluoric acid or an alkaline solution for removing the brazing material. .
  • voids are generated in the protruding portion of the brazing material, so that uniform distribution of thermal stress that reduces stress concentration at the end of the copper circuit board does not occur, and cracking of the ceramic substrate is likely to occur. They investigated.
  • it is not necessary to etch the brazing material protruding portion so that the pores of the protruding portion of the brazing material can be reduced and the formation of large pores can be prevented.
  • a brazing material 4 containing Ag, Cu, and Ti is printed or applied to the region 3 where the first masking is not performed.
  • the area of the brazing filler metal layer 4 to be printed or applied is increased by the length that protrudes beyond the shape of the copper circuit board.
  • the method of protruding is not limited to the method of printing and applying a brazing material that is larger than the length of the copper circuit board in advance, and for example, a brazing material printed and applied in the same shape as the copper circuit board shape. It is possible to employ a method of protruding by joining.
  • the thickness of the brazing material layer is preferably 10 to 40 ⁇ m. If the thickness is less than 10 ⁇ m, sufficient bonding strength may not be obtained. If the thickness exceeds 40 ⁇ m, no further effect can be obtained, resulting in an increase in cost.
  • a copper plate 5 is placed on the brazing filler metal layer 4, and the ceramic substrate and the copper plate are joined by heating (active metal joining method).
  • the active metal bonding condition is desirably heating at a temperature of 700 to 900 ° C. for 10 to 120 minutes in a vacuum or an inert atmosphere such as a nitrogen atmosphere.
  • a Ti phase and a TiN phase are generated in the brazing material layer 4.
  • the amount produced can be adjusted by, for example, the composition of the brazing material used, the conditions for active metal bonding, and the like.
  • the ceramic substrate is a nitride ceramic substrate (AlN, Si 3 N 4, etc.)
  • the TiN phase is formed by reaction of Ti in the brazing material and nitrogen of the nitride ceramic substrate. To do.
  • the ceramic substrate 1 and the copper plate 5 have markings for alignment.
  • an alignment hole or groove can be formed in the ceramic substrate 1, while a protrusion corresponding to the hole or groove can be provided on the copper plate 5.
  • a second masking 6 is applied on the copper plate 5 in the region to be a copper circuit pattern.
  • the portion 7 on the copper plate 5 where the second masking 6 is not performed is removed by etching to form a copper circuit pattern.
  • the etching solution an etching solution for etching a copper plate can be used. Specific examples thereof include ferric chloride and cupric chloride. Since the etching solution for etching the copper plate is used, if the brazing material protrusion is exposed to the etching solution more than necessary, Cu in the brazing material is etched. This phenomenon causes pores.
  • the ceramic circuit board 8 of the first embodiment as shown in FIG. 6 is obtained.
  • the first and second masking can be formed from a printable organic ink resist or the like.
  • the brazing filler metal layer (brazing filler metal protruding portion) 4a protruding outward from the side surface of the copper circuit pattern 5 is removed together.
  • the ratio of the total amount of the phase and the TiN phase to the entire brazing filler metal 4a increases.
  • the composition of the brazing filler metal layer (bonding layer) 4b interposed between the copper circuit pattern 5 and the ceramic substrate 1 is not affected by the etching.
  • the total of the Ti phase and the TiN phase in the brazing filler metal protrusion 4a increases to 3% by mass or more, and is different from the total amount of the Ti phase and the TiN phase in the bonding layer 4b.
  • the etching for forming the copper circuit pattern since the etching for forming the copper circuit pattern is performed, it is not necessary to expose the brazing material protruding portion 4 to the etching solution more than necessary. Therefore, no void is generated in the brazing material protruding portion 4a, and the brazing material protruding portion 4a.
  • the number of voids having an area per piece of 200 ⁇ m 2 or less is 1 or less (including 0). In addition, it cannot be overemphasized that the space
  • the total amount of the Ti phase and the TiN phase in the brazing material protruding portion 4a can be adjusted by the length of the brazing material protruding portion, the etching conditions, and the like. Further, the number of voids having an area of 200 ⁇ m 2 or less can be adjusted by etching conditions and the like.
  • the concentration of ferric chloride or cupric chloride in the etching solution may be reduced to 15 wt% or less.
  • the lower limit of the concentration of ferric chloride or cupric chloride in the etching solution is not particularly limited, but if it is too small, the progress of etching is slowed and the manufacturing time is long, so 5 wt% or more is preferable.
  • the shape of the brazing material protruding portion 4a is not limited to the cross-sectional R shape shown in FIG. 6, and may be a rectangular cross-sectional shape.
  • the end surface of the copper circuit pattern 5 after the etching process has an R-shaped cross section and a slope shape (a down slope facing from the upper surface of the copper circuit pattern 5 toward the brazing filler metal layer 4 side, for example, a skirt shape like the foot of Mt. Fuji). It is preferable. If it is such a shape, it will be easy to relieve
  • Examples 1-9 Each sample was manufactured by the method demonstrated below. First, the first masking was performed on the copper circuit pattern forming surface of the 50 ⁇ 60 mm ceramic substrate. The first masking was performed except for a region of a predetermined size that would be a copper circuit pattern and a brazing material protrusion. Next, an Ag—Cu—Ti brazing material (Ag 67 wt% —Cu 20 wt% —Sn 10 wt% —Ti 3 wt%) is printed at a thickness of 15 ⁇ m on the area where the first masking is not formed, and also on the back side.
  • Printing was performed at a thickness of 15 ⁇ m, copper plates were placed on both sides of the ceramic substrate, and bonded to the ceramic substrate by heating in vacuum at 10 ⁇ 3 Pa and 800 ° C. for 40 minutes.
  • As the copper circuit board two 20 ⁇ 20 mm copper plates were arranged at intervals of 1 mm.
  • etching resist pattern-patterned second masking (etching resist) is printed on the copper plate and etched with a ferric chloride solution (ferric chloride concentration of 5 to 15 wt%), a circuit pattern is formed.
  • the resist was removed to obtain a circuit board.
  • the thicknesses of the AlN substrate used in samples 1 and 2 and the Al 2 O 3 substrate of samples 3 and 4 were 0.635 mm, and the thickness of the Si 3 N 4 substrate used in samples 5 to 9 was 0.32 mm.
  • the AlN substrate has a thermal conductivity of 170 W / m ⁇ K and a three-point bending strength of 450 MPa
  • the Al 2 O 3 substrate has a thermal conductivity of 25 W / m ⁇ K and a three-point bending strength of 450 MPa
  • the Si 3 N 4 substrate has a thermal conductivity of The one having 90 W / m ⁇ K and a three-point bending strength of 700 MPa was used.
  • the obtained ceramic circuit board was inspected visually and by ultrasonic inspection for bonding defects and brazing defects, and -50 ° C., 30 minutes ⁇ room temperature, 10 minutes ⁇ 155 ° C., 30 minutes ⁇ room temperature, 10 minutes 1
  • a thermal cycle test was performed as a cycle.
  • the total amount of Ti phase and TiN phase in the protruding brazing material is 3 mass% or more and is different from the total amount of Ti phase and TiN phase in the bonding layer, and the protruding brazing material It can be seen that Samples 1 and 2 having one or less voids each having an area of 200 ⁇ m 2 or less are excellent in the heat resistance cycle.
  • the total amount of the Ti phase and TiN phase in the protruding brazing material is 3% by mass or more and is different from the total amount of the Ti phase and TiN phase in the bonding layer. It can be seen that Samples 5 to 9 having an area of 200 ⁇ m 2 or less in the brazing filler metal with one or less voids being excellent in the heat resistance cycle. Samples 1 to 9 had no voids with an area exceeding 200 ⁇ m 2 . In Samples 1 to 9, the end face of the copper circuit board had an inclined shape (bottom shape).
  • Example 11 to 15 Using an active metal brazing material composition containing 63 wt% Ag, 32 wt% Cu and 5 wt% Ti, a ceramic circuit board in which a copper plate and a silicon nitride substrate (plate thickness 0.32 mm) were joined was manufactured. Masking and active metal bonding were performed under the same conditions as described for Samples 1-9.
  • Table 2 below shows the number of heat-resistant cycles measured by conducting a thermal cycle test under the same conditions as described for Samples 1 to 9.
  • the copper circuit board two 15 ⁇ 20 ⁇ 0.3 mm copper plates were arranged at intervals of 1 mm.
  • the composition of the Ag—Cu—Ti brazing filler metal and the thickness of the brazing filler metal layer were as shown in Table 3.
  • a silicon nitride (Si 3 N 4 ) substrate having a thermal conductivity of 85 W / m ⁇ K and a three-point bending strength of 750 MPa was used.
  • a highly reliable ceramic circuit board can be produced, which is extremely effective in the industry.
  • SYMBOLS 1 Ceramic substrate, 2 ... 1st masking, 3 ... Area

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Abstract

La présente invention se rapporte à une carte de circuit céramique comprenant une base en céramique (1), une carte de circuit en cuivre (5) et une partie saillante en matériau de brasage (4a). La carte de circuit en cuivre (5) a été liée à au moins une surface de la base en céramique (1) au moyen d'une couche de matériau de brasage comprenant Ag, Cu et Ti. La partie saillante en matériau de brasage (4a) est composée de la couche de matériau de brasage qui fait saillie vers l'extérieur depuis les bords de la carte de circuit en cuivre (5). La partie saillante en matériau de brasage (4a) a une phase Ti et une phase TiN en une quantité totale égale ou supérieure à 3 % en masse qui est différente de la quantité totale de la phase Ti et de la phase TiN présente dans la couche de matériau de brasage (4b) intercalée entre la base en céramique et la carte de circuit en cuivre. Le nombre de vides, qui ont chacun une aire égale ou inférieure à 200 µm2 et sont présents dans la partie saillante en matériau de brasage (4a), est égal ou inférieur à 1 (y compris 0).
PCT/JP2010/065914 2009-09-15 2010-09-15 Carte de circuit céramique et procédé de fabrication associé WO2011034075A1 (fr)

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EP10817188.5A EP2480052B1 (fr) 2009-09-15 2010-09-15 Carte de circuit céramique et procédé de fabrication associé
PL10817188T PL2480052T3 (pl) 2009-09-15 2010-09-15 Ceramiczna płytka drukowana oraz sposób jej wytwarzania
EP17185117.3A EP3273755B1 (fr) 2009-09-15 2010-09-15 Procédé de fabrication d'une carte de circuit céramique
JP2011531941A JP5637992B2 (ja) 2009-09-15 2010-09-15 セラミックス回路基板の製造方法
US13/418,813 US8785785B2 (en) 2009-09-15 2012-03-13 Ceramic circuit board and process for producing same
US14/306,887 US9101065B2 (en) 2009-09-15 2014-06-17 Ceramic circuit board and process for producing same

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EP2480052A4 (fr) 2016-01-27
EP2480052B1 (fr) 2017-08-09
EP3273755A1 (fr) 2018-01-24
JP2017147470A (ja) 2017-08-24
US8785785B2 (en) 2014-07-22
EP3273755B1 (fr) 2018-11-07
JP6400788B2 (ja) 2018-10-03
JP2016165001A (ja) 2016-09-08
HUE034429T2 (en) 2018-02-28
JP6400787B2 (ja) 2018-10-03
US20140291385A1 (en) 2014-10-02
JP2017191943A (ja) 2017-10-19
JPWO2011034075A1 (ja) 2013-02-14
JP2016165000A (ja) 2016-09-08
JP6158144B2 (ja) 2017-07-05
JP6271629B2 (ja) 2018-01-31
HUE041380T2 (hu) 2019-05-28
US9101065B2 (en) 2015-08-04
JP5637992B2 (ja) 2014-12-10
US20120168209A1 (en) 2012-07-05
JP2017195378A (ja) 2017-10-26
PL2480052T3 (pl) 2018-01-31

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