CN106537580B - 陶瓷电路基板及其制造方法 - Google Patents

陶瓷电路基板及其制造方法 Download PDF

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CN106537580B
CN106537580B CN201580039392.5A CN201580039392A CN106537580B CN 106537580 B CN106537580 B CN 106537580B CN 201580039392 A CN201580039392 A CN 201580039392A CN 106537580 B CN106537580 B CN 106537580B
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青野良太
汤浅晃正
宫川健志
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Denka Co Ltd
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Abstract

本发明的课题在于获得对超声波接合具有优异的耐裂纹性的陶瓷电路基板。本发明通过下述陶瓷电路基板解决上述课题，所述陶瓷电路基板的特征在于，在陶瓷基板的一面接合有金属电路板、在另一面接合有金属散热板，金属电路板的结晶粒径为20μm以上且70μm以下。该陶瓷电路基板可以如下制造：分别在陶瓷基板的一面配置金属电路板、在另一面配置金属散热板，以真空度为1×10‑3Pa以下、接合温度为780℃以上且850℃以下、保持时间为10分钟以上且60分钟以下进行接合，从而制造。

Description

陶瓷电路基板及其制造方法
技术领域
本发明涉及陶瓷电路基板及其制造方法。
背景技术
在如面向电气铁路、车辆、工业机械等的需要高电压、大电流工作的电源组件中，搭载有在陶瓷电路基板上接合了半导体元件的器件。从陶瓷电路基板向外部导出输出功率时，通常情况下设置铜电极，将其以超出陶瓷电路基板外侧的状态设置。
以往，陶瓷电路基板与铜电极的接合使用焊料，但存在如下问题：作为电源组件使用时产生的热、振动导致焊料裂纹产生，可靠性降低。因此，逐渐使用将金属电路板与铜电极直接接合的超声波接合。对于超声波接合而言，是相对于陶瓷基板在垂直方向对铜电极施加负荷、同时在水平方向给予超声波振动，由此将电路基板的铜板和铜电极一体化的方法。
就陶瓷电路基板中使用的陶瓷基板而言，对于伴随着半导体元件的高输出化、高集成化的放热量的增加，使用了具有高热导率的氮化铝烧结体或氮化硅烧结体。特别是，与氮化硅基板相比，氮化铝基板由于热导率高，所以适合作为用于搭载高散热性电子构件的陶瓷电路基板。
但是，氮化铝基板具有高热导率，但另一方面，机械强度、韧性等低，因此，存在因超声波接合时的振动而导致在接合部正下方的氮化铝板表面产生裂纹、损害组件的可靠性的问题。鉴于上述情况，为了防止在陶瓷基板上产生裂纹，提出以下方案。
专利文献1中提出了如下方案：通过最优化将铜电极超声波接合的位置以及铜电极与金属电路板的接合强度，能够防止在陶瓷基板上产生裂纹。
专利文献1：日本特开2002-164461号公报
发明内容
但是，专利文献1中并没有改进陶瓷电路基板本身，不是防止裂纹产生的根本的解决对策。
鉴于上述课题，本发明的目的在于得到对超声波接合具有优异的耐裂纹性的陶瓷电路基板。
本发明人为了实现上述目的进行了潜心研究，结果发现，通过使陶瓷电路基板的金属电路板的结晶粒径微细，能够提高超声波接合时的耐裂纹性。
即，本发明为一种陶瓷电路基板，其特征在于，在陶瓷基板的一面接合有金属电路板、在另一面接合有金属散热板，金属电路板的结晶粒径为20μm以上且70μm以下。
另外，本发明为一种陶瓷电路基板的制造方法，其特征在于，是上述陶瓷电路基板的制造方法，分别在陶瓷基板的一面配置金属电路板、在另一面配置金属散热板，以真空度为1×10-3Pa以下、接合温度为780℃以上且850℃以下、保持时间为10分钟以上且60分钟以下，将金属电路板及金属散热板接合于陶瓷基板。
根据本发明，可以得到对超声波接合具有优异的耐裂纹性的陶瓷电路基板。
具体实施方式
(陶瓷电路基板)
本发明涉及的陶瓷电路基板的特征在于，在陶瓷基板的一面接合有金属电路板，在另一面接合有金属散热板，接合后的金属电路板的结晶粒径为20μm以上且70μm以下。
通过使接合后的金属电路板的结晶粒径为20μm以上且70μm以下，能够使超声波接合时的耐裂纹性提高。金属电路板的结晶粒径优选为20μm以上且65μm以下，更优选为20μm以上且62μm以下。
作为本发明的陶瓷电路基板中使用的陶瓷基板，没有特殊的限定，能够使用氮化硅、氮化铝等氮化物系陶瓷，氧化铝、氧化锆等氧化物系陶瓷，碳化硅等碳化物系陶瓷，硼化镧等硼化物系陶瓷等。但是，由于采用活性金属法将金属板接合于陶瓷基板，所以优选氮化铝、氮化硅等非氧化物系陶瓷，进而，从优异的导热性的观点考虑优选氮化铝基板。
陶瓷基板的厚度没有特殊的限定，优选0.2mm以上且1.5mm以下。通过设为1.5mm以下，能够抑制热阻变大，通过设为0.2mm以上，能够抑制耐久性降低。
金属电路板及金属散热板中使用的金属只要是能够适用活性金属法的金属即可，没有特殊的限定，可以为铜、铝、铁、镍、铬、银、钼、钴的单质或其合金等，特别是从导电性、散热性的观点考虑，优选铜板。需要说明的是，金属电路板及金属散热板可以由相同种类金属构成，也可以由不同种类构成。
铜板的纯度优选为90％以上。通过使纯度为90％以上，在将陶瓷基板与铜板接合时，能够防止铜板与焊料的反应变得不充分，防止铜板变硬、电路基板的可靠性降低。
铜板的厚度没有特别的限定，通常为0.1mm以上且1.5mm以下，特别是从散热性的观点考虑，优选为0.2mm以上，从耐热循环特性的观点考虑，优选为0.5mm以下。
对于铜板的种类而言，可以为压延铜箔、电解铜箔等，没有特别的限定，为了使与陶瓷基板接合后的结晶粒径微细，更优选电解铜箔。另外，也可以使陶瓷基板的电路侧为电解铜箔、使散热面侧为压延铜箔。另外，在电路面侧使用压延铜箔时，也可以通过接合时的升温速度、冷却速度等温度条件的最优化，实现微细化。
本发明中使用的金属电路、金属散热板与陶瓷基板的接合，可以经由焊料层进行。因此，陶瓷基板具有将金属散热板、焊料层、陶瓷基板、焊料层、金属电路板按照此顺序层合而成的结构。该焊料层含有Ag、Cu或Ag-Cu合金和Ti、Zr、Hf等活性金属成分。
对于焊料层中的Ti、Zr、Hf等活性金属成分的含有比例，相对于Ag、Cu或Ag-Cu合金的总量100质量份，为0.5质量份以上，优选为2.0质量份以上，为10质量份以下，优选为6.0质量份以下。
另外，在本发明的其它方案中，也能够形成下述陶瓷电路基板，其特征在于，在陶瓷基板的一面接合有金属电路、在另一面接合有金属散热板，以真空度为1×10-3Pa以下、接合温度为780℃～850℃、保持时间为10～60分钟接合，接合后的金属电路板的结晶粒径小于100μm。
进而，在其它方案中，也能够形成下述陶瓷电路基板，其特征在于，在陶瓷基板的一面接合金属电路，在另一面经由Ag-Cu系焊料层接合金属散热板，以接合时的真空度为1×10-3Pa以下、接合温度为780℃～850℃、保持时间为10～60分钟接合，接合后的金属电路板的结晶粒径小于100μm，陶瓷基板由氮化铝形成。
(制造方法)
陶瓷基板可以如下制造：分别在陶瓷基板的一面配置金属电路形成用金属板、在另一面配置散热板形成用金属板，以真空度为1×10-3Pa以下、接合温度为780℃以上且850℃以下、保持时间10分钟以上且60分钟以下，将金属电路板及金属散热板接合于陶瓷基板。
陶瓷电路基板的接合温度在真空度1×10-3Pa以下的真空炉中优选为780℃以上且850℃以下的温度，其保持时间优选为10分钟以上且60分钟以下。通过使接合温度为780℃以上、保持时间为10分钟以上，能够避免因Ti化合物的生成不充分而不能部分地接合等问题。通过使接合温度为850℃以下、保持时间为60分钟以下，能够抑制在高温或保持时间过长时产生的、接合时的热膨胀率差导致的热应力增加，防止耐热循环性降低。
本发明中使用的金属电路及金属散热板与陶瓷基板之间的接合，能够通过使用焊料的活性金属钎焊法进行。该焊料可以使用含有Ag、Cu或Ag-Cu合金和Ti、Zr、Hf等活性金属成分的焊料。例如，作为焊料，可以使用含有Ag、Cu及Ti等活性金属的合金箔，也可以使用使这些单质金属或合金粉末分散在聚异丁烷甲基丙烯酸酯(polyisobutene methacrylate)等粘合剂及松油醇等中而成的糊剂。对于调制而成的糊剂，通过丝网印刷法、辊涂法等涂布在陶瓷基板的表面及背面，在其表面配置金属电路形成用金属板，在背面配置散热板形成用金属板。
为了将电路图案形成于已接合的陶瓷电路基板，将抗蚀剂涂布在金属板上进行蚀刻。对于抗蚀剂，没有特别的限定，例如，可以使用通常采用的紫外线固化型、热固化型。对于抗蚀剂的涂布方法，没有特殊的限制，可以采用例如丝网印刷法等公知的涂布方法。
为了形成电路图案，进行铜板的蚀刻处理。对于蚀刻液，也没有特殊的限制，可以使用通常采用的氯化铁溶液、氯化铜溶液、硫酸、双氧水等，作为优选例，可以举出氯化铁溶液、氯化铜溶液。在通过蚀刻除去了不需要的金属部分的氮化物陶瓷电路基板上，残留有涂布的焊料、其合金层、氮化物层等，通常使用卤化铵水溶液、硫酸、硝酸等无机酸、含有双氧水的溶液将它们除去。电路形成后剥离抗蚀剂时，对于剥离方法没有特殊的限定，通常为浸渍在碱水溶液中的方法等。
实施例
[实施例1]
在厚度0.635mm的氮化铝基板的两面，涂布活性金属焊料，所述活性金属焊料中相对于银粉末(福田金属箔粉工业(株式会社)制造：AgC-BO)90质量份及铜粉末(福田金属箔粉工业(株式会社)制造：SRC-Cu-20)10质量份的总计100质量份含有3.5质量份钛(大阪钛技术(株式会社)制造：TSH-350)。然后，在表面重叠电路形成用铜板，在背面重叠散热板形成用铜板(均为电解铜箔)，在真空气氛下(6.5×10-4Pa)、在800℃下保持20分钟，由此制造铜板与氮化铝基板的接合体。
将已接合的电路基板用含有氯化铜的蚀刻液进行蚀刻，形成电路。进而，将焊料层用氟化铵/过氧化氢蚀刻液进行蚀刻，制作氮化铝电路基板。
所得的氮化铝电路基板的金属电路板的结晶粒径的测定、超声波接合评价及热循环试验，如下实施。
＜结晶粒径＞
使用光学显微镜(50倍)观察陶瓷电路基板的金属电路板表面。确认任意10分区的1mm×1mm区域中的结晶的最长距离，求出其平均值，作为结晶粒径。结果如表1所示。
＜超声波接合评价＞
将1.5mm厚的铜电极材用(Adwelds Corporation制造UP-Lite3000)在负荷1200N、频率20kHz、振幅50μm、接合时间0.4秒的条件下接合。接合后，通过蚀刻除去铜电极及电路基板的铜板，用光学显微镜观察陶瓷基板的表面。对于超声波接合而言，在每1条件下实施16处，将裂纹产生处分成以下3级。
A：0处、B：1～8处、C：9～16处
＜热循环试验评价＞
将所制作的陶瓷电路基板投入热冲击试验，将以-40℃×30分钟、125℃×30分钟为1循环的热冲击试验进行500次循环后，通过蚀刻除去铜板，用光学显微镜(50倍)观察在陶瓷基板的表面上产生的裂纹的产生状态。热循环试验实施10片，在测量裂纹长度中，使用最大值，分成以下3级。
A：未观察到裂纹
B：观察到长度小于100μm的裂纹
C：观察到长度100μm以上的裂纹
考虑各评价，作为综合评价，按照以下3级进行评价。
○：超声波接合评价及热循环试验评价中均为A级
△：超声波接合评价或热循环试验评价中的任意一项为B级
×：超声波接合评价或热循环试验评价中的任意一项为C级
[实施例2～5、比较例1～5]
改变表1所示的条件，除此之外与实施例1相同地进行。
[表1]
Figure GDA0001331797600000071
如上所述，根据本发明可以提供一种陶瓷电路基板，通过超声波接合将铜电极接合在陶瓷电路基板时，能够在陶瓷基板不产生裂纹地接合，能够提高组件的可靠性。

Claims (3)

1.一种陶瓷电路基板，其特征在于，在陶瓷基板的一面上，经由焊料层直接接合有由铜构成的金属电路板，在所述陶瓷基板的另一面上，经由焊料层直接接合有由铜构成的金属散热板，所述金属电路板的结晶粒径为20μm以上且70μm以下。
2.如权利要求1所述的陶瓷电路基板，其中，陶瓷基板由氮化铝形成。
3.一种陶瓷电路基板的制造方法，其特征在于，
是权利要求1或2所述的陶瓷电路基板的制造方法，
分别在陶瓷基板的一面配置由铜构成的金属电路板、在另一面配置由铜构成的金属散热板，以真空度为1×10-3Pa以下、接合温度为780℃以上且850℃以下、保持时间为10分钟以上且60分钟以下，将所述金属电路板及所述金属散热板接合于陶瓷基板。
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Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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