JP6400787B2 - パワーモジュール用セラミックス回路基板の製造方法 - Google Patents
パワーモジュール用セラミックス回路基板の製造方法 Download PDFInfo
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- JP6400787B2 JP6400787B2 JP2017101087A JP2017101087A JP6400787B2 JP 6400787 B2 JP6400787 B2 JP 6400787B2 JP 2017101087 A JP2017101087 A JP 2017101087A JP 2017101087 A JP2017101087 A JP 2017101087A JP 6400787 B2 JP6400787 B2 JP 6400787B2
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- Prior art keywords
- brazing material
- circuit board
- copper
- ceramic
- copper circuit
- Prior art date
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- 239000000919 ceramic Substances 0.000 title claims description 84
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000010949 copper Substances 0.000 claims description 136
- 229910052802 copper Inorganic materials 0.000 claims description 129
- 238000005219 brazing Methods 0.000 claims description 124
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 121
- 239000000463 material Substances 0.000 claims description 102
- 239000000758 substrate Substances 0.000 claims description 75
- 229910052718 tin Inorganic materials 0.000 claims description 37
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 33
- 230000000873 masking effect Effects 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229960003280 cupric chloride Drugs 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 238000005304 joining Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 44
- 239000002184 metal Substances 0.000 description 44
- 239000000945 filler Substances 0.000 description 27
- 239000000243 solution Substances 0.000 description 10
- 239000000523 sample Substances 0.000 description 9
- 230000035882 stress Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 238000013001 point bending Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 229910017945 Cu—Ti Inorganic materials 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- 229910052782 aluminium Chemical group 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000004453 electron probe microanalysis Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
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- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
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Description
第1の実施形態のセラミックス回路基板は、セラミックス基板と、セラミックス基板の少なくとも一方の面にろう材層を介して接合された銅回路板と、銅回路板の側面から外側にはみ出したろう材層で形成されたろう材はみ出し部とを有する。ろう材層はAg、Cu及びTiを含むろう材から形成される。本発明者らは、ろう材はみ出し部中のTi相およびTiN相の合計を3質量%以上にし、かつその合計量を銅回路板とセラミックス基板の間に介在されたろう材層(以下、接合層と称する)中のTi相およびTiN相の合計量と異なるものにし、さらに、ろう材はみ出し部における1個当たりの面積が200μm2以下の空隙を1つ以下(0を含む)にすることにより、銅回路板と電子部品との熱膨張差による熱ストレスが緩和されると共に接合欠陥が極めて少なくなるため、信頼性の高いセラミックス−金属接合回路基板を実現できることを初めて見出した。
第1の実施形態のセラミックス回路基板は、第2の実施形態の製造方法が一例として示される。
第一のマスキングが施されていない領域に、Ag、Cu及びTiを含むろう材を塗布または印刷することによりろう材層を形成する工程と、
ろう材層上に銅板を載せ、加熱によりセラミックス基板と銅板を接合する工程と、
銅板上の銅回路パターンとなる領域に第二のマスキングを施す工程と、
エッチングにより銅回路パターンを形成する工程と
を有する。
各試料を以下に説明する方法で製造した。まず、50×60mmのセラミックス基板の銅回路パターン形成面に第一のマスキングを行った。第一のマスキングは、銅回路パターンとろう材はみ出し部となる所定のサイズの領域を除いて行った。次に、第一のマスキングを形成していない領域にAg−Cu−Ti系ろう材(Ag67重量%−Cu20重量%−Sn10重量%−Ti3重量%)を厚さ15μmで印刷、また裏面にも厚さ15μmで印刷し、セラミックス基板の両面に銅板を配置し、真空中10−3Pa、800℃で40分間の加熱によりセラミック基板と接合した。銅回路板は、20×20mmの銅板を1mm間隔で2枚配置した。
セラミックス基板(AlN基板)の全面に試料1〜9で用いるのと同様な組成のAg−Cu−Ti系ろう材を厚さ15μmで塗布し、その上に銅板を接合し、加熱接合した。その後、塩化第二鉄で銅板をパターン形状にエッチングし、さらにフッ酸を用いてはみ出しろう材をエッチングした。はみ出し量は試料2と同様に0.12mmとした。はみ出しろう材中の1個当たりの面積200μm2以下の空隙数をカウントしたところ、8個であった。また、試料1〜9と同様の熱サイクル試験を行ったところ、340回となった。
Ag63重量%、Cu32重量%及びTi5重量%を含む活性金属ろう材組成を用いて、銅板と窒化珪素基板(板厚0.32mm)を接合したセラミックス回路基板を製造した。マスキング及び活性金属接合は、試料1〜9で説明したのと同様な条件で行った。
40×60×0.32mmの窒化珪素(Si3N4)基板の銅回路パターン形成面に第一のマスキングを行った。第一のマスキングは、銅回路パターンとろう材はみ出し部となる所定のサイズの領域を除いて行った。次に、第一のマスキングを形成していない領域にAg−Cu−Ti系ろう材を印刷、また裏面にも印刷し、窒化珪素基板の両面に銅板を配置し、真空中10−3Pa、760〜810℃で20〜50分間の加熱により窒化珪素基板と接合した。銅回路板は、15×20×0.3mmの銅板を1mm間隔で2枚配置した。なお、Ag−Cu−Tiろう材の組成およびろう材層厚さは表3の通りとした。なお、窒化珪素(Si3N4)基板は熱伝導率85W/m・Kかつ3点曲げ強度750MPaのものを用いた。
以下に、本願出願の当初の特許請求の範囲に記載された発明を付記する。
[1] セラミックス基板と、
前記セラミックス基板の少なくとも一方の面に、Ag、Cu及びTiを含むろう材層を介して接合された銅回路板と、
前記銅回路板の側面から外側にはみ出した前記ろう材層で形成されたろう材はみ出し部とを備えるセラミックス回路基板であって、
前記ろう材はみ出し部中のTi相およびTiN相の合計は3質量%以上で、かつ前記セラミックス基板と前記銅回路板の間に介在された前記ろう材層中のTi相およびTiN相の合計量と異なり、前記ろう材はみ出し部における1個当たりの面積が200μm 2 以下の空隙が1つ以下(0を含む)であることを特徴とするセラミックス回路基板。
[2] 前記ろう材はみ出し部中のTi相およびTiN相の合計は3質量%以上40質量%以下であることを特徴とする上記[1]記載のセラミックス回路基板。
[3] 前記ろう材はみ出し部のはみ出し長さが0.01mm以上で、かつ前記銅回路板の間隔の30%以下であることを特徴とする上記[1]または[2]のいずれか1項に記載のセラミックス回路基板。
[4] 前記セラミックス基板が窒化珪素、窒化アルミニウムあるいはアルミナからなり、前記銅回路板の厚さが0.25mm以上であることを特徴とする上記[1]ないし上記[3]のいずれか1項に記載のセラミックス回路基板。
[5] 前記ろう材層は、Ag:90〜50重量%、Snおよび/またはInからなる元素:5〜15重量%、Ti:0.1〜6重量%、残部Cuおよび不可避不純物からなる組成のろう材を用いて形成されることを特徴とする請求項1ないし請求項4のいずれか1項に記載のセラミックス回路基板。
[6] セラミックス基板上における、銅回路パターン及びろう材はみ出し部となる領域以外の部分に第一のマスキングを施す工程と、
前記第一のマスキングが施されていない領域に、Ag、Cu及びTiを含むろう材層を形成する工程と、
前記ろう材層上に銅板を載せ、加熱により前記セラミックス基板と前記銅板を接合する工程と、
前記銅板上の銅回路パターンとなる領域に第二のマスキングを施す工程と、
エッチングにより銅回路パターンを形成する工程と
を備えることを特徴とするセラミックス回路基板の製造方法。
[7] 前記エッチングに用いるエッチング液が塩化第二鉄または塩化第二銅であることを特徴とする上記[6]記載のセラミックス回路基板の製造方法。
[8] 前記セラミックス基板と前記銅板に位置合わせ用マーキングが施されていることを特徴とする上記[6]または[7]のいずれか1項に記載のセラミックス基板の製造方法。
[9] 前記第一のマスキング及び前記第二のマスキングの材料が印刷可能な有機インクレジストであることを特徴とする上記[6]ないし上記[8]のいずれか1項に記載のセラミックス回路基板の製造方法。
Claims (6)
- セラミックス基板の少なくとも一方の面に、Ag、Cu及びTiを含むろう材層を介して銅回路パターンとしての銅回路板を接合する工程、および前記銅回路板の側面から外側にはみ出した前記ろう材層で形成されたろう材はみ出し部を形成する工程を含むパワーモジュール用セラミックス回路基板の製造方法であって、
前記ろう材層は、前記セラミックス基板と前記銅回路板との間に介在した接合層部から外側にはみ出した、長さが0.01mm以上で、かつ銅回路板の間隔の30%以下であるろう材はみ出し部を有し、前記ろう材層は、Ag:90〜50重量%、Snおよび/またはInからなる元素:5〜15重量%、Ti:0.1〜6重量%、残部Cuおよび不可避不純物からなる組成を有し、
前記ろう材はみ出し部中のTi相およびTiN相の合計割合は、3質量%以上40質量%以下で、かつ前記ろう材層の接合層部中のTi相およびTiN相の合計割合よりも多く、前記ろう材はみ出し部において、1個当たりの面積が200μm 2 を超える空隙が存在せず、かつ1個当たりの面積が200μm2以下の空隙が1つ以下(0を含む)であることを特徴とするパワーモジュール用セラミックス回路基板の製造方法。 - 前記セラミックス基板が窒化珪素、窒化アルミニウムあるいはアルミナからなり、前記銅回路板の厚さが0.25mm以上であることを特徴とする請求項1に記載のパワーモジュール用セラミックス回路基板の製造方法。
- 前記銅回路パターンとしての前記銅回路板を接合する工程および前記ろう材はみ出し部を形成する工程は、前記セラミックス基板上における、銅回路パターン及びろう材はみ出し部となる領域以外の部分に第一のマスキングを施すこと、前記第一のマスキングが施されていない領域に、前記ろう材層を形成すること、前記ろう材層上に銅板を載せ、加熱により前記セラミックス基板と前記銅板を接合すること、前記銅板上の銅回路パターンとなる領域に第二のマスキングを施すこと、およびエッチングにより前記銅回路パターンを形成することを含むことを特徴とする請求項1または2に記載のパワーモジュール用セラミックス回路基板の製造方法。
- 前記エッチングに用いるエッチング液が塩化第二鉄または塩化第二銅であることを特徴とする請求項3に記載のパワーモジュール用セラミックス回路基板の製造方法。
- 前記セラミックス基板と前記銅板に位置合わせ用マーキングが施されていることを特徴とする請求項3または4に記載のパワーモジュール用セラミックス回路基板の製造方法。
- 前記第一のマスキング及び前記第二のマスキングの材料が印刷可能な有機インクレジストであることを特徴とする請求項3ないし5のいずれか1項に記載のパワーモジュール用セラミックス回路基板の製造方法。
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JP2017195378A (ja) | 2017-10-26 |
WO2011034075A1 (ja) | 2011-03-24 |
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EP3273755A1 (en) | 2018-01-24 |
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JP5637992B2 (ja) | 2014-12-10 |
JP6334781B2 (ja) | 2018-05-30 |
US8785785B2 (en) | 2014-07-22 |
JPWO2011034075A1 (ja) | 2013-02-14 |
US9101065B2 (en) | 2015-08-04 |
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EP2480052B1 (en) | 2017-08-09 |
EP3273755B1 (en) | 2018-11-07 |
HUE041380T2 (hu) | 2019-05-28 |
JP6400788B2 (ja) | 2018-10-03 |
EP2480052A4 (en) | 2016-01-27 |
US20140291385A1 (en) | 2014-10-02 |
JP6271628B2 (ja) | 2018-01-31 |
HUE034429T2 (en) | 2018-02-28 |
JP2016165000A (ja) | 2016-09-08 |
PL2480052T3 (pl) | 2018-01-31 |
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