WO2011024866A1 - 露光装置、露光方法及びデバイス製造方法 - Google Patents

露光装置、露光方法及びデバイス製造方法 Download PDF

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Publication number
WO2011024866A1
WO2011024866A1 PCT/JP2010/064405 JP2010064405W WO2011024866A1 WO 2011024866 A1 WO2011024866 A1 WO 2011024866A1 JP 2010064405 W JP2010064405 W JP 2010064405W WO 2011024866 A1 WO2011024866 A1 WO 2011024866A1
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WIPO (PCT)
Prior art keywords
detection
substrate
unit
stage
exposure
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PCT/JP2010/064405
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English (en)
French (fr)
Japanese (ja)
Inventor
正紀 加藤
圭 奈良
Original Assignee
株式会社ニコン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 株式会社ニコン filed Critical 株式会社ニコン
Priority to KR1020177022420A priority Critical patent/KR101925114B1/ko
Priority to KR1020187034369A priority patent/KR102047505B1/ko
Priority to CN2010800340183A priority patent/CN102472987A/zh
Priority to JP2011528827A priority patent/JP5692076B2/ja
Priority to KR1020117028627A priority patent/KR101769091B1/ko
Publication of WO2011024866A1 publication Critical patent/WO2011024866A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/703—Gap setting, e.g. in proximity printer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Definitions

  • the present invention relates to an exposure apparatus, an exposure method, and a device manufacturing method.
  • This application claims priority based on Japanese Patent Application No. 2009-195686 for which it applied on August 26, 2009, and uses the content here.
  • an exposure apparatus that exposes a substrate with exposure light through a mask as disclosed in the following patent document is used.
  • the exposure apparatus includes a mask stage that can move while holding a mask, and a substrate stage that can move while holding a substrate.
  • a substrate alignment process is performed after the substrate is held on the substrate stage.
  • an alignment mark provided on the substrate is detected, and the substrate stage is driven based on the detection result.
  • the position of the alignment mark detection unit needs to be fixed with respect to the projection optical system. For example, a technique is known in which a detection unit is fixed to a projection optical system and a substrate stage is moved when an alignment mark is detected.
  • An object of an aspect of the present invention is to provide an exposure apparatus, an exposure method, and a device manufacturing method capable of improving throughput.
  • an exposure apparatus that exposes a substrate, the stage having a mounting unit on which the substrate is mounted, a stage that moves, and the mounting unit that is provided on the stage.
  • An exposure apparatus comprising: a detection unit that detects a portion of the substrate placed on a predetermined region of the placement unit; and a control unit that performs drive control of the stage based on a detection result of the detection unit.
  • an exposure method for exposing a substrate using a placement step for placing the substrate on a placement portion of a stage, and a detection portion provided on the stage
  • An exposure method includes a detection step of detecting a portion of the substrate located in a predetermined region of the placement unit, and a drive control step of performing drive control of the stage based on the detection result of the detection unit.
  • the substrate coated with a photosensitive agent is exposed, a pattern is transferred to the substrate, and the exposure by the exposure is performed.
  • a device manufacturing method including developing a photosensitive agent to form an exposure pattern layer corresponding to the pattern, and processing the substrate through the exposure pattern layer.
  • FIG. 1 is a schematic block diagram showing an example of an exposure apparatus according to a first embodiment of the present invention.
  • 1 is a perspective view showing an example of an exposure apparatus according to the present embodiment.
  • 1 is a diagram showing an example of a projection system and a substrate stage according to the present embodiment.
  • 6 is a flowchart showing an example of an exposure method according to the present embodiment.
  • FIG. 5 is a view showing an example of the operation of the exposure apparatus according to the present embodiment.
  • FIG. 5 is a view showing an example of the operation of the exposure apparatus according to the present embodiment.
  • FIG. 5 is a view showing an example of the operation of the exposure apparatus according to the present embodiment.
  • FIG. 5 is a view showing an example of the operation of the exposure apparatus according to the present embodiment.
  • FIG. 5 is a view showing an example of the operation of the exposure apparatus according to the present embodiment.
  • FIG. 5 is a view showing an example of the operation of the exposure apparatus according to the present embodiment.
  • the perspective view which shows an example of the exposure apparatus which concerns on 2nd Embodiment of this invention.
  • the figure which shows the other structure of exposure apparatus The figure which shows the other structure of exposure apparatus.
  • the figure which shows the other structure of exposure apparatus. The figure which shows the other structure of exposure apparatus.
  • the figure which shows the other structure of exposure apparatus. The figure which shows the other structure of exposure apparatus.
  • a predetermined direction in the horizontal plane is defined as an X-axis direction
  • a direction orthogonal to the X-axis direction in the horizontal plane is defined as a Y-axis direction
  • a direction orthogonal to each of the X-axis direction and the Y-axis direction is defined as a Z-axis direction.
  • the rotation (inclination) directions around the X axis, Y axis, and Z axis are the ⁇ X, ⁇ Y, and ⁇ Z directions, respectively.
  • FIG. 1 is a schematic block diagram showing an example of an exposure apparatus EX according to this embodiment
  • FIG. 2 is a perspective view.
  • an exposure apparatus EX includes a mask stage 1 that can move while holding a mask M, a substrate stage 2 that can move while holding a substrate P, and a drive system 3 that moves the mask stage 1.
  • a driving system 4 that moves the substrate stage 2
  • an illumination system IS that illuminates the mask M with the exposure light EL
  • a projection system PS that projects an image of the pattern of the mask M illuminated by the exposure light EL onto the substrate P
  • a control device 5 that controls the overall operation of the exposure apparatus EX.
  • the mask M includes a reticle on which a device pattern projected onto the substrate P is formed.
  • the substrate P includes, for example, a base material such as a glass plate and a photosensitive film (coated photosensitizer) formed on the base material.
  • the substrate P includes a large glass plate, and the size of one side of the substrate P is, for example, 500 mm or more.
  • a rectangular glass plate having a side of about 3000 mm is used as the base material of the substrate P.
  • a mark Ma for baseline amount measurement is provided on the surface of the mask M on the ⁇ Z side (see FIG. 4).
  • the exposure apparatus EX of the present embodiment includes an interferometer system 6 that measures position information of the mask stage 1 and the substrate stage 2, a first detection system 7 that detects position information of the surface of the mask M, and the substrate P.
  • a second detection system 8 that detects surface position information
  • a front surface alignment system 40 that detects an alignment mark of the substrate P from the front surface side
  • a back surface alignment system 60 that detects the alignment mark of the substrate P from the back surface side.
  • the exposure apparatus EX includes a body 13.
  • the body 13 includes, for example, a base plate 10 disposed on a support surface (for example, floor surface) FL in a clean room via a vibration isolation table BL, a first column 11 disposed on the base plate 10, and a first column 11 And a second column 12 disposed on the surface.
  • the body 13 supports each of the projection system PS, the mask stage 1 and the substrate stage 2.
  • the projection system PS is supported by the first column 11 via the surface plate 14.
  • the mask stage 1 is supported so as to be movable with respect to the second column 12.
  • the substrate stage 2 is supported so as to be movable with respect to the base plate 10.
  • the projection system PS has a plurality of projection optical systems.
  • the illumination system IS has a plurality of illumination modules corresponding to a plurality of projection optical systems.
  • the exposure apparatus EX of the present embodiment projects an image of the pattern of the mask M onto the substrate P while moving the mask M and the substrate P synchronously in a predetermined scanning direction. That is, the exposure apparatus EX of the present embodiment is a so-called multi-lens scan exposure apparatus.
  • the projection system PS has seven projection optical systems PL1 to PL7, and the illumination system LS has seven illumination modules IL1 to IL7.
  • the number of projection optical systems and illumination modules is not limited to seven.
  • the projection system PS may have 11 projection optical systems, and the illumination system IS may have 11 illumination modules.
  • the illumination system IS can irradiate the predetermined illumination areas IR1 to IR7 with the exposure light EL.
  • the illumination areas IR1 to IR7 are included in the irradiation areas of the exposure light EL emitted from the illumination modules IL1 to IL7.
  • the illumination system IS illuminates each of the seven different illumination areas IR1 to IR7 with the exposure light EL.
  • the illumination system IS illuminates portions of the mask M arranged in the illumination regions IR1 to IR7 with exposure light EL having a uniform illuminance distribution.
  • bright lines g line, h line, i line
  • a mercury lamp are used as the exposure light EL emitted from the illumination system IS.
  • the mask stage 1 is movable with respect to the illumination areas IR1 to IR7 while holding the mask M.
  • the mask stage 1 includes a mask holding unit 15 that can hold the mask M.
  • the mask holding unit 15 includes a chuck mechanism that can vacuum-suck the mask M, and holds the mask M in a releasable manner.
  • the mask holding unit 15 holds the mask M so that the lower surface (pattern forming surface) of the mask M and the XY plane are substantially parallel.
  • the drive system 3 includes, for example, a linear motor, and can move the mask stage 1 on the guide surface 12G of the second column 12.
  • the mask stage 1 operates in the three directions of the X axis, the Y axis, and the ⁇ Z direction on the guide surface 12G in a state where the mask M is held by the mask holding unit 15 by the operation of the drive system 3. It is movable.
  • the projection system PS can irradiate the predetermined projection areas PR1 to PR7 with the exposure light EL.
  • the projection areas PR1 to PR7 correspond to the irradiation areas of the exposure light EL emitted from the projection optical systems PL1 to PL7.
  • the projection system PS projects a pattern image on each of seven different projection regions PR1 to PR7.
  • the projection system PS projects an image of the pattern of the mask M at a predetermined projection magnification onto portions of the substrate P that are disposed in the projection regions PR1 to PR7.
  • the substrate stage 2 is movable with respect to the projection regions PR1 to PR7 while holding the substrate P.
  • the substrate stage 2 includes a substrate holding unit 16 that can hold the substrate P.
  • the substrate holding unit 16 includes a chuck mechanism capable of vacuum-sucking the substrate P, and holds the substrate P so that the substrate P can be released.
  • the substrate holding unit 16 holds the substrate P so that the surface (exposure surface) of the substrate P and the XY plane are substantially parallel.
  • the drive system 4 includes, for example, a linear motor, and can move the substrate stage 2 on the guide surface 10 ⁇ / b> G of the base plate 10.
  • the substrate stage 2 operates on the guide surface 10G with the X-axis, Y-axis, Z-axis, ⁇ X, ⁇ Y, and It can move in six directions of ⁇ Z direction.
  • FIG. 3 is a schematic configuration diagram illustrating an example of the illumination system IS according to the present embodiment.
  • the illumination system IS includes a light source 17 composed of an ultra-high pressure mercury lamp, an elliptic mirror 18 that reflects light emitted from the light source 17, and a dichroic mirror 19 that reflects at least part of the light from the elliptic mirror 18.
  • a shutter device 20 capable of blocking the progress of light from the dichroic mirror 19, a relay optical system 21 including a collimating lens 21A and a condensing lens 21B on which light from the dichroic mirror 19 is incident, and only light in a predetermined wavelength region.
  • a light guide unit 23 that branches the light from the relay optical system 21 and supplies it to each of the plurality of illumination modules IL1 to IL7.
  • the first illumination module IL1 is shown among the first to seventh illumination modules IL1 to IL7.
  • the second to seventh illumination modules IL2 to IL7 have the same configuration as the first illumination module IL1.
  • the first illumination module IL1 will be mainly described, and the description of the second to seventh illumination modules IL2 to IL7 will be simplified or omitted.
  • the light from the relay optical system 21 enters the incident end 24 of the light guide unit 23 and is emitted from a plurality of exit ends 25A to 25G.
  • the first illumination module IL1 includes a shutter device 26 that can block the progress of light from the exit end 25A, a collimator lens 27 that is supplied with light from the exit end 25A, and a fly that is supplied with light from the collimator lens 27.
  • An eye integrator 28 and a condenser lens 29 to which light from the fly eye integrator 28 is supplied are provided.
  • the exposure light EL emitted from the condenser lens 29 is applied to the illumination area IR1.
  • the first illumination module IL1 illuminates the illumination region IR1 with the exposure light EL having a uniform illuminance distribution.
  • the second to seventh illumination modules IL2 to IL7 have the same configuration as the first illumination module IL1.
  • Each of the second to seventh illumination modules IL2 to IL7 illuminates the illumination areas IR2 to IR7 with the exposure light EL having a uniform illuminance distribution.
  • the illumination system IS illuminates at least a part of the mask M arranged in the illumination regions IR1 to IR7 with the exposure light EL having a uniform illuminance distribution.
  • FIG. 4 shows an example of the projection system PS, the first detection system 7, the second detection system 8, the front surface alignment system 40, the back surface alignment system 60, and the substrate stage 2 arranged in the projection regions PR1 to PR7 according to the present embodiment.
  • FIG. 4 shows an example of the projection system PS, the first detection system 7, the second detection system 8, the front surface alignment system 40, the back surface alignment system 60, and the substrate stage 2 arranged in the projection regions PR1 to PR7 according to the present embodiment.
  • the first projection optical system PL1 projects an image of the pattern of the mask M illuminated with the exposure light EL by the first illumination module IL1 onto the substrate P.
  • the first projection optical system PL1 includes an image plane adjustment unit 33, a shift adjustment unit 34, two sets of catadioptric optical systems 31, 32, a field stop 35, and a scaling adjustment unit 36.
  • the image plane adjustment unit 33 can adjust the position of the image plane of the first projection optical system PL1 (position in the Z axis, ⁇ X, and ⁇ Y directions).
  • the image plane adjustment unit 33 is disposed at a position that is optically conjugate with respect to the mask M and the substrate P.
  • the image plane adjustment unit 33 includes a first optical member 33A and a second optical member 33B, and a drive device (not shown) that can move the first optical member 33A relative to the second optical member 33B.
  • the first optical member 33A and the second optical member 33B are opposed to each other through a predetermined gap by a gas bearing.
  • the first optical member 33A and the second optical member 33B are glass plates capable of transmitting the exposure light EL, and each have a wedge shape.
  • the control device 5 can adjust the position of the image plane of the first projection optical system PL1 by operating the drive device and adjusting the positional relationship between the first optical member 33A and the second optical member 33B. .
  • the exposure light EL that has passed through the image plane adjustment unit 33 enters the shift adjustment unit 34.
  • the shift adjusting unit 34 can shift the pattern image of the mask M on the substrate P in the X-axis direction and the Y-axis direction.
  • the exposure light EL transmitted through the shift adjustment unit 34 enters the first set of catadioptric optical system 31.
  • the catadioptric optical system 31 forms an intermediate image of the pattern of the mask M.
  • the exposure light EL emitted from the catadioptric optical system 31 is supplied to the field stop 35.
  • the field stop 35 is disposed at the position of the intermediate image of the pattern formed by the catadioptric optical system 31.
  • the field stop 35 defines the projection region PR1.
  • the field stop 35 defines the projection region PR1 on the substrate P in a trapezoidal shape.
  • the exposure light EL that has passed through the field stop 35 enters the second set of catadioptric optical system 32.
  • the catadioptric optical system 32 is configured in the same manner as the catadioptric optical system 31.
  • the exposure light EL emitted from the catadioptric optical system 32 enters the scaling adjustment unit 36.
  • the scaling adjustment unit 36 can adjust the magnification (scaling) of the pattern image of the mask M.
  • the exposure light EL that has passed through the scaling adjustment unit 36 is irradiated onto the substrate P.
  • the first projection optical system PL1 projects an image of the pattern of the mask M onto the substrate P at an erecting equal magnification.
  • the above-described image plane adjustment unit 33, shift adjustment unit 34, and scaling adjustment unit 36 constitute an image formation characteristic adjustment device 30 that adjusts the image formation characteristic (optical characteristic) of the first projection optical system PL1.
  • the imaging characteristic adjusting device 30 is capable of adjusting the position of the image plane of the first projection optical system PL1 with respect to the six directions of the X axis, the Y axis, the Z axis, the ⁇ X, the ⁇ Y, and the ⁇ Z directions. The magnification can be adjusted.
  • the first projection optical system PL1 has been described above.
  • the second to seventh projection optical systems PL2 to PL7 have the same configuration as the first projection optical system PL1. A description of the second to seventh projection optical systems PL2 to PL7 is omitted.
  • a reference member 43 is disposed on the upper surface of the substrate stage 2 on the + X side with respect to the substrate holding unit 16.
  • the upper surface 44 of the reference member 43 is disposed in substantially the same plane as the surface of the substrate P held by the substrate holding part 16.
  • a transmissive portion 45 that can transmit the exposure light EL is disposed on the upper surface 44 of the reference member 43.
  • a light receiving device 46 capable of receiving the light transmitted through the transmitting portion 45 is disposed below the reference member 43.
  • the light receiving device 46 includes a lens system 47 on which light that has passed through the transmission unit 45 enters, and an optical sensor 48 that receives the light that has passed through the lens system 47.
  • the optical sensor 48 includes an image sensor (CCD). The optical sensor 48 outputs a signal corresponding to the received light to the control device 5.
  • an optical member 50 having a transmission part 49 is arranged on the upper surface of the substrate stage 2 on the ⁇ X side with respect to the substrate holding part 16.
  • a light receiving device 51 capable of receiving light transmitted through the transmission portion 49 is disposed below the optical member 50.
  • the light receiving device 51 includes a lens system 52 on which light that has passed through the transmission unit 49 enters, and an optical sensor 53 that receives light that has passed through the lens system 52.
  • the optical sensor 53 outputs a signal corresponding to the received light to the control device 5.
  • the interferometer system 6 includes a laser interferometer unit 6A that measures position information of the mask stage 1 and a laser interferometer unit 6B that measures position information of the substrate stage 2.
  • the laser interferometer unit 6 ⁇ / b> A can measure position information of the mask stage 1 using a measurement mirror 1 ⁇ / b> R disposed on the mask stage 1.
  • the laser interferometer unit 6B can measure the position information of the substrate stage 2 using the measurement mirror 2R arranged on the substrate stage 2.
  • the interferometer system 6 can measure position information of the mask stage 1 and the substrate stage 2 with respect to the X axis, Y axis, and ⁇ X directions using the laser interferometer units 6A and 6B.
  • the first detection system 7 detects the position of the lower surface (pattern formation surface) of the mask M in the Z-axis direction.
  • the first detection system 7 is a so-called oblique incidence type multi-point focus / leveling detection system, and as shown in FIG. 4, a plurality of detectors arranged to face the lower surface of the mask M held on the mask stage 1. 7A-7F.
  • Each of the detectors 7A to 7F includes a projection unit that irradiates detection light to a predetermined detection region, and a light receiving unit that can receive detection light from the lower surface of the mask M arranged in the detection region.
  • the second detection system 8 detects the position of the surface (exposure surface) of the substrate P in the Z-axis direction.
  • the second detection system 8 is a so-called oblique incidence type multi-point focus / leveling detection system, and as shown in FIG. 4, a plurality of detectors arranged to face the surface of the substrate P held by the substrate stage 2. 8A-8H.
  • Each of the detectors 8A to 8H includes a projection unit that irradiates detection light to a predetermined detection region, and a light receiving unit that can receive detection light from the surface of the substrate P arranged in the detection region.
  • the surface alignment system 40 detects alignment marks m1 to m6 (see FIG. 7 and the like) provided on the substrate P.
  • the surface alignment system 40 is a so-called off-axis alignment system, and includes a plurality of microscopes 40A to 40F arranged to face the surface of the substrate P held on the substrate stage 2 as shown in FIG.
  • Each of the microscopes 40A to 40F includes a projection unit that irradiates detection light to the detection regions AL1 to AL6, and a light receiving unit that can acquire optical images of the alignment marks m1 to m6 arranged in the detection regions AL1 to AL6.
  • the back surface alignment system 60 detects alignment marks m1 to m6 (see FIG. 7 and the like) provided on the substrate P. Similar to the front surface alignment system 40, the back surface alignment system 60 is a so-called off-axis alignment system. As shown in FIG. 4, the back surface alignment system 60 is provided in the stage body 2A of the substrate stage 2, and can detect the alignment marks m1 to m6 from the surface (back surface) side of the substrate P on the ⁇ Z side. . Moreover, since the back surface alignment system 60 is provided in the stage main body 2A, it can move integrally with the substrate stage 2. The back surface alignment system 60 is preferably provided at a position different from the substrate holder 16 in the substrate stage 2.
  • the back surface alignment system 60 is not removed from the substrate stage 2 when the substrate holding unit 16 is replaced, and the labor for setting the position of the back surface alignment system 60 each time the substrate holding unit 16 is replaced can be saved. Further, the influence of heat by the substrate holding part 16 is also suppressed.
  • the back surface alignment system 60 is provided at the + X side end and the ⁇ X side end of the stage main body 2A.
  • a plurality of (for example, four) microscopes 60A to 60F are provided along the Y direction.
  • a plurality of (for example, four) microscopes 60G to 60L are provided along the Y direction.
  • FIG. 5 is a diagram showing the configuration of the back surface alignment system 60.
  • the back surface alignment system 60 includes a light source 61 that emits detection light, a light transmission lens system 62 that receives detection light from the light source 61, and a mirror that guides detection light that has passed through the light transmission lens system 62 to the lower surface of the mask M. 63 and 64, the detection light guided by the mirrors 63 and 64, the lens 65 that focuses the detection areas (predetermined areas) AL11 to AL16 and AL21 to AL26, and the detection lights reflected by the detection areas AL11 to AL16 and AL21 to AL26.
  • a lens 66 for guiding and the microscopes 60A to 60F and 60G to 60L for detecting the detection light guided by the lens 66 are provided.
  • alignment marks m1 to m6 are arranged in the detection areas AL11 to AL16 and AL21 to AL26.
  • the detection light is projected onto the detection areas AL11 to AL16 and AL21 to AL26, and the reflected light is received by the microscopes 60A to 60F and 60G to 60L, thereby detecting the detection areas AL11 to AL16.
  • Optical images of the alignment marks m1 to m6 arranged on AL21 to AL26 can be acquired.
  • FIG. 6 is a schematic diagram showing an example of the positional relationship between the illumination regions IR1 to IR7 and the mask M, and shows the positional relationship in a plane including the lower surface of the mask M. As shown in FIG. 6, the lower surface of the mask M has a pattern region MA in which a pattern is formed.
  • each of the illumination areas IR1 to IR7 has a trapezoidal shape in the XY plane.
  • the illumination areas IR1, IR3, IR5, IR7 by the illumination modules IL1, IL3, IL5, IL7 are arranged at substantially equal intervals in the Y-axis direction
  • the illumination areas IR2, IR4 by the illumination modules IL2, IL4, IL6 are arranged.
  • IR6 are arranged at substantially equal intervals in the Y-axis direction.
  • the illumination areas IR1, IR3, IR5, and IR7 are arranged on the ⁇ X side with respect to the illumination areas IR2, IR4, and IR6.
  • illumination areas IR2, IR4, and IR6 are arranged between illumination areas IR1, IR3, IR5, and IR7 with respect to the Y-axis direction.
  • the control device 5 moves the mask stage 1 in the X-axis direction, moves the lower surface of the mask M held on the mask stage 1 relative to the detection areas of the detectors 7A to 7F in the X-axis direction, and detects the detector
  • a plurality of detection points set on the lower surface (pattern region MA) of the mask M can be arranged in the detection areas 7A to 7F, and the positions of the plurality of detection points in the Z-axis direction can be detected.
  • the control device 5 outputs the Z of the lower surface (pattern region MA) of the mask M based on the position in the Z-axis direction of the lower surface of the mask M detected at each of the plurality of detection points, which is output from the first detection system 7.
  • Position information (map data) regarding the axes, ⁇ X, and ⁇ Y directions can be acquired.
  • FIG. 7 is a schematic diagram showing an example of the positional relationship between the detection areas AL1 to AL6 by the microscopes 40A to 40F, the detection areas AL11 to AL18 by the microscopes 60A to 60L, and the alignment marks m1 to m6 on the substrate P. The positional relationship in a plane including the surface of the substrate P is shown.
  • the surface of the substrate P has a plurality of exposure areas (processed areas) PA1 to PA6 onto which an image of the pattern of the mask M is projected.
  • the surface of the substrate P has six exposure areas PA1 to PA6.
  • the exposure areas PA1, PA2, and PA3 are arranged at approximately equal intervals in the Y axis direction, and the exposure areas PA4, PA5, and PA6 are arranged at approximately equal intervals in the Y axis direction.
  • the exposure areas PA1, PA2, and PA3 are arranged on the + X side with respect to the exposure areas PA4, PA5, and PA6.
  • each of the projection areas PR1 to PR7 is a trapezoid in the XY plane.
  • projection regions PR1, PR3, PR5, PR7 by the projection optical systems PL1, PL3, PL5, PL7 are arranged at substantially equal intervals in the Y-axis direction
  • projection regions PR2 by the projection optical systems PL2, PL4, PL6 are arranged.
  • PR4, PR6 are arranged at substantially equal intervals in the Y-axis direction.
  • the projection areas PR1, PR3, PR5, PR7 are arranged on the ⁇ X side with respect to the projection areas PR2, PR4, PR6.
  • the projection areas PR2, PR4, and PR6 are arranged between the projection areas PR1, PR3, PR5, and PR7 with respect to the Y-axis direction.
  • the detection areas AL1 to AL6 by the microscopes 40A to 40F are arranged on the ⁇ X side with respect to the projection areas PR1 to PR7.
  • the detection areas AL1 to AL6 are arranged apart from each other in the Y-axis direction.
  • the distance between the two outer detection areas AL1 and AL6 in the Y-axis direction is set so that the two outer exposure areas PA1 ( The distance between the ⁇ Y side edge of PA4) and the + Y side edge of exposure area PA3 (PA6) is substantially equal.
  • the detection areas AL11 to AL14 and the microscopes 60G to 60L by the microscopes 60A to 60F are arranged on a straight line along the Y direction on the stage main body 2A, for example.
  • the distance between the detection area AL11 and the detection area AL12 and the distance between the detection area AL15 and the detection area AL16 are equal to the distance between the detection area AL1 by the microscope 40A and the detection area AL3 by the microscope 40C, respectively.
  • the distance between the detection area AL12 and the detection area AL13 and the distance between the detection area AL16 and the detection area AL17 are equal to the distance between the detection area AL3 and the detection area AL4 by the microscope 40D, respectively.
  • the distance between the detection area AL13 and the detection area AL14 and the distance between the detection area AL17 and the detection area AL18 are equal to the distance between the detection area AL4 and the detection area AL6 by the microscope 40F. Therefore, the detection areas AL11 to AL14 and the detection areas AL15 to AL18 by the microscopes 60A to 60F overlap the detection areas AL1, AL3, AL4, and AL6, respectively.
  • the front surface alignment system 40 and the back surface alignment system 60 detect a plurality of alignment marks m1 to m6 provided on the substrate P.
  • six alignment marks m1 to m6 are arranged on the substrate P so as to be separated from each other in the Y axis direction, and groups of these alignment marks m1 to m6 are arranged at four places separated in the X axis direction.
  • Alignment marks m1 and m2 are provided adjacent to both ends of exposure areas PA1 and PA4, and alignment marks m3 and m4 are provided adjacent to both ends of exposure areas PA2 and PA5.
  • m6 is provided adjacent to both ends of the exposure areas PA3 and PA6.
  • the microscopes 40A to 40F (detection areas AL1 to AL6) and the microscopes 60A to 60F (detection areas) corresponding to the six alignment marks m1 to m6 that are spaced apart in the Y-axis direction on the substrate P.
  • AL11 to AL16 and microscopes 60G to 60L (detection areas AL21 to AL26) are arranged.
  • the detection areas of the microscopes 40A to 40F are provided so as to be simultaneously arranged on the alignment marks m1 to m6.
  • the detection areas of the microscopes 60A to 60F and the microscopes 60G to 60L are arranged simultaneously on the four alignment marks m1, m3, m4, and m6 among the six alignment marks m1 to m6.
  • the control device 5 loads (loads) the mask M onto the mask stage 1 (step S1).
  • a setup process including an alignment process of the mask M, various measurement processes, and a calibration process is executed based on the exposure recipe (step S2).
  • the alignment process of the mask M is performed by receiving an image of an alignment mark (not shown) arranged on the mask M by the light receiving device 46 via the projection system PS and the transmission unit 45, and in the XY plane. The process of measuring the position of M is included.
  • the light receiving device 46 is used to measure the illuminance of the exposure light EL emitted from each of the projection optical systems PL1 to PL7 using the light receiving device 51 and the imaging characteristics of the projection optical systems PL1 to PL7. At least one of the processes to be measured.
  • the positional relationship (baseline amount) between the detection areas AL1 to AL6 of the surface alignment system 40 and the projection position of the pattern image of the mask M is determined based on the surface alignment system 40, the transmission unit 45, and the light receiving device 46.
  • the process which measures using etc. is performed.
  • the mark Ma provided on the mask M is irradiated with exposure light
  • the pattern image via the mark Ma is projected onto the reference member 43
  • the reference member 43 is used as a reference.
  • the pattern image to be detected is detected by the light receiving device 46.
  • the control device 5 measures the baseline amount based on the detection result of the light receiving device 46. This operation is first performed for the projection optical systems PL1, PL3, PL5, and PL7 as shown in FIG. 9A, and then performed for the projection optical systems PL2, PL4, and PL6 as shown in FIG. 9B.
  • the calibration process is based on the process of adjusting the illuminance of the exposure light EL emitted from each of the illumination modules IL1 to IL7 using the result of the measurement process, and the measurement result of the imaging characteristic measured using the light receiving device 46.
  • at least one process of adjusting the imaging characteristics of the projection optical systems PL1 to PL7 using the imaging characteristics adjusting device 30 is included.
  • the control device 5 loads (loads) the substrate P onto the substrate stage 2 at a predetermined timing after completing the above-described processes (step S3).
  • the alignment process of the substrate P is executed based on the exposure recipe.
  • alignment marks m1 to m6 provided on the substrate P are detected (step S4), and the substrate stage 2 is driven according to the detection result (step S5).
  • the exposure of the exposure areas PA1 to PA6 is started (step S5).
  • the control device 5 moves the pattern area MA to the illumination areas IR1 to IR7, and moves the exposure areas PA1 to PA3 to the projection areas PR1 to PR7 to expose the exposure areas PA1 to PA6. Start.
  • the same lot includes a group of a plurality of substrates P exposed using the same mask M. At least in the same lot, exposure is performed under the same exposure recipe.
  • step S4 the alignment mark detection process (step S4) of the substrate P included in the above operation will be described.
  • the alignment marks m1 to m6 are detected by using both the front surface alignment system 40 and the back surface alignment system 60 for the first few substrates P to be exposed (step S4). -1).
  • the control device 5 causes the surface alignment system 40 to be calibrated when the substrate P is carried into the substrate stage 2.
  • the reference member 43 is detected by the surface alignment system 40, and the surface alignment system 40 is calibrated based on the detection result.
  • the control device 5 calibrates the detected value, for example.
  • the control device 5 moves the substrate stage 2 to the ⁇ X side and sequentially detects the four columns of alignment marks m1 to m6 provided on the substrate P from the ⁇ X side column to the + X side column.
  • the alignment marks m1 to m6 arranged on the most ⁇ X side of the substrate P they are detected using the front surface alignment system 40 and the back surface alignment system 60.
  • the back surface alignment system 60 Since the back surface alignment system 60 is provided in the stage main body 2A, the relative position with respect to the substrate P does not change even when the substrate stage 2 moves. Detection by the back surface alignment system 60 is performed for four alignment marks m1, m3, m4, and m6 among the six alignment marks m1 to m6 in the columns corresponding to the microscopes 60A to 60F and 60G to 60L, respectively.
  • the control device 5 causes the back surface alignment system 60 to be calibrated using the detection result of the front surface alignment system 40 and the detection result of the back surface alignment system 60.
  • the control device 5 calculates the deviation of the detection result of the back surface alignment system 60 on the basis of the detection result of the front surface alignment system 40, and calibrates the back surface alignment system 60 based on the calculation result. Since the surface alignment system 40 is subjected to measurement processing when the substrate P is loaded, the detection result of the surface alignment system 40 can be suitably used as a reference value.
  • the control device 5 calibrates the detection value of the back surface alignment system 60, for example. The same applies to the calibration process described below.
  • the control device 5 serves as a calibration unit of the front surface alignment system 40 or the back surface alignment system 60.
  • This calibration includes, for example, obtaining a correction value of the detection result by the back surface alignment system 60 and reflecting the correction value in the detection result of the back surface alignment system 60 after the next time. Since the drive control of the substrate stage 2 of the back surface alignment system 60 and the calibration of the back surface alignment system 60 are performed in parallel, the time of the alignment operation is shortened.
  • the calibration result of the back surface alignment system 60 is stored in, for example, a storage unit (not shown) of the control device 5.
  • the control device 5 After the detection of the most -X side alignment marks m1 to m6 is completed, the control device 5 further moves the substrate stage 2 to the -X side and uses the surface alignment system 40 alone to align the alignment marks m1 to m6. Are sequentially detected from the ⁇ X side to the + X side.
  • the control device 5 uses both the front surface alignment system 40 and the back surface alignment system 60 to detect them as shown in FIG. 11B. To do. In this case, the control device 5 causes the back surface alignment system 60 to be calibrated as described above.
  • the alignment marks m1 to m6 are detected using only the back surface alignment system 60 (step S4-2).
  • the control device 5 uses the back surface alignment system 60 to align the alignment mark located on the most ⁇ X side of the substrate P almost simultaneously with loading the substrate P onto the substrate stage 2.
  • m1 to m6 and alignment marks m1 to m6 arranged on the most + X side of the substrate P are detected.
  • the calibration information of the back surface alignment system 60 is accumulated and stored in the storage unit of the control device 5 by the alignment of the first few substrates P. For this reason, when performing alignment of the board
  • step S4-2 since the alignment marks m1 to m6 are detected almost simultaneously with the loading of the substrate P onto the substrate stage 2, the controller 5 moves the substrate stage 2 from the loading position of the substrate P to the exposure position. You may make it calculate a detection result, moving. In this case, the calculation by the control device 5 is performed before the substrate stage 2 reaches the exposure position, and the substrate stage 2 is arranged at a position reflecting the calculation result.
  • the mask M is replaced.
  • a setup process is performed, and the substrate P is loaded, the control device 5 causes step S4-1 to be performed on the first few substrates P in step S4. Then, the subsequent step S4-2 is performed for the subsequent substrate P.
  • the back surface alignment system 60 that detects the alignment marks m1 to m6 located in the predetermined detection areas AL11 to AL16 and AL21 to AL26 in the substrate P loaded on the substrate stage 2 is provided. Since the control device 5 is provided on the substrate stage 2 and performs drive control of the substrate stage 2 based on the detection result of the back surface alignment system 60, the alignment marks m1 to m2 are moved without moving the substrate stage 2. m6 can be detected, and the drive control of the substrate stage 2 can be performed based on the detection result. Thereby, the detection of the alignment marks m1 to m6 and the driving operation of the substrate stage 2 based on the detection result are performed in a short time, so that the throughput can be improved.
  • FIG. 13 is a view showing the overall arrangement of the exposure apparatus EX2 according to this embodiment.
  • the exposure apparatus EX2 holds and moves the illumination system IS2 that illuminates the mask M with the exposure light EL, the projection system PS2 that projects an image of the pattern of the mask M illuminated by the exposure light EL onto the substrate P, and the substrate P.
  • a possible substrate stage PST and a control device 110 for controlling the operation of the entire exposure apparatus EX2 are provided.
  • the illumination system IS2 includes an elliptical mirror 102, a dichroic mirror 103, a collimating lens 104, a wavelength selection filter 105, a neutral density filter 106, a condenser lens 107, a light guide fiber 108, and illumination optical systems IL11 to IL14.
  • a light beam emitted from a light source (not shown) arranged at the first focal position of the elliptical mirror 102 is reflected by the reflective film of the elliptical mirror 102 and the reflective film of the dichroic mirror 103.
  • light in a wavelength range including light of i-line (wavelength 365 nm) is extracted and made incident on the collimating lens 104.
  • the light source image is formed at the second focal position of the elliptical mirror 102.
  • the divergent light beam from the light source image formed at the second focal position of the elliptical mirror 102 is converted into parallel light by the collimator lens 104, and passes through the wavelength selection filter 105 that transmits only the light beam in a predetermined exposure wavelength region. ing.
  • the light beam that has passed through the wavelength selection filter 105 passes through the neutral density filter 106 and is collected by the condenser lens 107 at the entrance end of the entrance 108 a of the light guide fiber 108.
  • the light guide fiber 108 is, for example, a random light guide fiber configured by randomly bundling a large number of fiber strands, and includes an entrance 108a and four exits (hereinafter referred to as exits 108b, 108c, 108d, and 108e).
  • exits 108b, 108c, 108d, and 108e The light beam incident on the incident port of the light guide fiber 108 propagates through the inside of the light guide fiber 108 and is divided and emitted by the four emission ports 108b to 108e.
  • the divided and emitted light is incident on four partial illumination optical systems IL11 to IL14 that partially illuminate the mask M.
  • the illumination optical systems IL11 to IL14 are provided in, for example, one row along the Y direction.
  • the light transmitted through the illumination optical systems IL11 to IL14 illuminates the mask M almost uniformly.
  • the light from the illumination area of the mask M is incident on, for example, four projection optical systems PL11 to PL14.
  • the projection optical systems PL11 to PL14 are provided, for example, in one row along the Y direction so as to correspond to the illumination areas by the illumination optical systems IL11 to IL14.
  • the projection optical systems PL11 to PL14 form a pattern image of the mask M on the substrate P.
  • an enlargement projection optical system that forms an image by enlarging the pattern increase on the mask M on the substrate P is used as the projection optical systems PL11 to PL14.
  • the projection optical systems PL11 to PL14 are catadioptric projection optical systems that form a temporary image that is an enlarged image in the field of view in the image field of the substrate P.
  • the exposure apparatus EX2 of the present embodiment also includes an interferometer system 150 that measures position information of the substrate stage PST and a back surface alignment system 160 that detects the alignment mark of the substrate P from the back surface side, as in the above embodiment. ing. Further, similarly to the first embodiment, a surface alignment system (not shown) that detects the alignment mark of the substrate P from the front surface side is provided.
  • the configuration of the front surface alignment system (not shown) and the back surface alignment system 160 are the same as the configurations of the front surface alignment system 40 and the back surface alignment system 60 of the first embodiment, for example.
  • the substrate P When the substrate P is exposed using the exposure apparatus EX2, half of the substrate P is exposed by moving the substrate stage PST one reciprocating motion in the X direction while projecting the pattern image of the mask M onto the projection region. . Therefore, the entire substrate P is exposed by reciprocating the substrate stage PST in the X direction twice.
  • the substrate stage PST When detecting an alignment mark (not shown) formed on the substrate P, using only the surface alignment system, it is necessary to move the substrate stage PST one extra round for detecting the alignment mark. On the other hand, by detecting the alignment mark of the substrate P using the back surface alignment system 160 in this embodiment, the movement of the substrate stage PST can be omitted for one reciprocation. Thereby, the throughput can be improved.
  • the back surface alignment system 60 is disposed corresponding to the region where the alignment marks m1 to m6 are disposed along two opposing sides of the + X side end portion and the ⁇ X side end portion of the substrate P.
  • the back surface alignment system 60 may be arranged in a portion corresponding to a region where the alignment marks m1 to m6 are arranged at the center in the X direction of the substrate P.
  • the alignment marks m1 to m6 are provided on the substrate P, and the alignment marks m1 to m6 are detected by the back surface alignment system 60.
  • the present invention is not limited to this.
  • a side portion of the substrate P may be detected instead of the alignment marks m1 to m6.
  • the back surface alignment system 60 is calibrated by simultaneously detecting the alignment marks m1 to m6 by the front surface alignment system 40 and the back surface alignment system 60 has been described. There is no.
  • the back surface alignment system 60 has an index projection slit 67 between the light source 61 and the mirror 63, and the light passing through the index projection slit 67 is projected onto the substrate stage 2. It does not matter as a configuration.
  • the control device 5 can cause the front surface alignment system 40 to detect an index projected from the back surface alignment system 60 and calibrate the back surface alignment system 60 based on the detection result. .
  • the back surface alignment system 60 can be calibrated before the board
  • the alignment marks m1 to m6 are detected by the back surface alignment system 60, an index can be projected onto the substrate P, and the alignment marks m1 to m6 can be detected with the index as a reference, so that detection with higher accuracy is possible.
  • the control device 5 may cause the surface alignment system 40 to detect the index.
  • the surface alignment system 40 may be provided with the same configuration as the index projection slit 67. In this case, the substrate stage 2 may be moved in the Z direction in order to focus the pattern image.
  • the light receiving device 46 is used when measuring the baseline amount.
  • the present invention is not limited to this.
  • FIG. A configuration for measuring the line amount may be used.
  • the substrate stage 2 when measuring the baseline amount, the substrate stage 2 is moved so that the optical axes of the mark Ma and the microscopes 60A to 60F or the microscopes 60G to 60L coincide with each other, and a pattern image via the mark Ma is captured by the microscope 60A.
  • the detection is performed at ⁇ 60F and 60G ⁇ 60L.
  • the light applied to the mark Ma may be light from a light source provided in the back surface alignment system 60, or exposure light as in the above embodiment.
  • microscopes 60A to 60F and 60G to 60L that can detect the wavelength region of the exposure light are used.
  • the substrate stage 2 may be moved in the Z direction in order to focus the pattern image.
  • the present invention is not limited to this.
  • the projection optical systems PL1 to PL7 may be calibrated using the detection result.
  • the arrangement of the detection region of the front surface alignment system 40 and the detection region of the back surface alignment system 60 is not limited to the example shown in the above embodiment.
  • the detection area 400 of the front surface alignment system 40 and the detection area 600 of the back surface alignment system 60 are appropriately set depending on the arrangement of the exposure area PA. can do.
  • the detection area 400 and the detection area 600 do not always have to coincide with each other.
  • the detection areas may be shifted from each other, or the number of detection areas may be different between the two.
  • FIG. 17 shows an example in which scanning is performed 6 times with 6 chamfers.
  • FIG. 17B shows an example in the case of performing four scans with eight chamfers.
  • FIG. 17 (c) shows an example in which scanning is performed 6 times with 12 chamfers.
  • the part (d) of FIG. 17 shows an example when scanning is performed 6 times with 18 chamfers.
  • FIG. 17 (e) shows an example in which scanning is performed nine times with 15 chamfers.
  • the detection area 400 and the detection area 600 are shown as being shifted for easy identification, but the detection area 400 and the detection area 600 may overlap, for example.
  • the control apparatus 5 when calibrating the front surface alignment system 40 or the back surface alignment system 60, the control apparatus 5 demonstrated and demonstrated the example which calibrates the detected value in each alignment system, However, It is limited to this.
  • a position adjusting actuator (not shown) is attached to the front surface alignment system 40 and the back surface alignment system 60, and the controller 5 drives the actuators to position the front surface alignment system 40 and the back surface alignment system 60. You may make it calibrate.
  • the substrate P in the above-described embodiment not only a glass substrate for a display device but also a semiconductor wafer for manufacturing a semiconductor device, a ceramic wafer for a thin film magnetic head, or an original mask (reticle) used in an exposure apparatus ( Synthetic quartz, silicon wafer) or the like is applied.
  • a step-and-scan type scanning exposure apparatus that moves the mask M and the substrate P synchronously to scan and expose the substrate P with the exposure light EL through the pattern of the mask M.
  • the present invention may be applied to a step-and-repeat projection exposure apparatus (stepper) in which the pattern of the mask M is collectively exposed while the mask M and the substrate P are stationary, and the substrate P is sequentially moved stepwise. it can.
  • the present invention also relates to a twin-stage type exposure having a plurality of substrate stages as disclosed in US Pat. No. 6,341,007, US Pat. No. 6,208,407, US Pat. No. 6,262,796, and the like. It can also be applied to devices.
  • the present invention relates to a substrate stage for holding a substrate as disclosed in US Pat. No. 6,897,963, European Patent Application No. 1713113, etc., and a reference mark without holding the substrate.
  • the present invention can also be applied to an exposure apparatus that includes a formed reference member and / or a measurement stage on which various photoelectric sensors are mounted.
  • An exposure apparatus including a plurality of substrate stages and measurement stages can be employed.
  • a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate is used.
  • a variable shaped mask also called an electronic mask, an active mask, or an image generator
  • a pattern forming apparatus including a self-luminous image display element may be provided instead of the variable molding mask including the non-luminous image display element.
  • the exposure apparatus is manufactured by assembling various subsystems including each component so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. To ensure these various accuracies, before and after this assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy.
  • the assembly process from various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection, etc., between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus.
  • the exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.
  • a microdevice such as a semiconductor device includes a step 201 for designing the function and performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, and a substrate which is a base material of the device.
  • Manufacturing step 203 including substrate processing (exposure processing) including exposing the substrate with exposure light using a mask pattern and developing the exposed substrate (photosensitive agent) according to the above-described embodiment
  • the substrate is manufactured through a substrate processing step 204, a device assembly step (including processing processes such as a dicing process, a bonding process, and a packaging process) 205, an inspection step 206, and the like.
  • the photosensitive agent is developed to form an exposure pattern layer (developed photosensitive agent layer) corresponding to the mask pattern, and the substrate is processed through the exposure pattern layer. It is.
  • EX, EX2 ... exposure device M ... mask P ... substrate 1 ... mask stage 2, PST ... substrate stage 5, 110 ... control device 40 ... front surface alignment system 43 ... reference member 46 ... light receiving device 60, 160 ... back surface alignment system 67 ... Index projection slit

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PCT/JP2010/064405 2009-08-26 2010-08-25 露光装置、露光方法及びデバイス製造方法 WO2011024866A1 (ja)

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CN105527795B (zh) * 2014-09-28 2018-09-18 上海微电子装备（集团）股份有限公司 曝光装置及离焦倾斜误差补偿方法
CN105549327B (zh) 2014-10-29 2018-03-02 上海微电子装备（集团）股份有限公司 曝光装置的调整装置及调整方法
CN107251674B (zh) * 2015-02-26 2019-10-08 株式会社富士 元件供给装置及安装机
CN107302665B (zh) * 2017-08-18 2020-07-24 联想(北京)有限公司 一种摄像装置、光圈调节方法和电子设备

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CN102472987A (zh) 2012-05-23
JPWO2011024866A1 (ja) 2013-01-31
KR20180129989A (ko) 2018-12-05
KR102047505B1 (ko) 2019-12-02
JP5692076B2 (ja) 2015-04-01
KR101925114B1 (ko) 2018-12-05
TW201118509A (en) 2011-06-01
KR20170096216A (ko) 2017-08-23
KR20120047849A (ko) 2012-05-14

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