WO2010098372A1 - 電界効果トランジスタ - Google Patents
電界効果トランジスタ Download PDFInfo
- Publication number
- WO2010098372A1 WO2010098372A1 PCT/JP2010/052923 JP2010052923W WO2010098372A1 WO 2010098372 A1 WO2010098372 A1 WO 2010098372A1 JP 2010052923 W JP2010052923 W JP 2010052923W WO 2010098372 A1 WO2010098372 A1 WO 2010098372A1
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- WIPO (PCT)
- Prior art keywords
- formula
- field effect
- effect transistor
- heterocyclic compound
- producing
- Prior art date
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
- C07D495/04—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C319/00—Preparation of thiols, sulfides, hydropolysulfides or polysulfides
- C07C319/14—Preparation of thiols, sulfides, hydropolysulfides or polysulfides of sulfides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
- C07C323/22—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and doubly-bound oxygen atoms bound to the same carbon skeleton
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
Definitions
- the present invention relates to a field effect transistor. More specifically, the present invention relates to a field effect transistor having a semiconductor layer formed of a specific organic heterocyclic compound.
- a field effect transistor is generally an element having a semiconductor layer (semiconductor film) on a substrate, a source electrode, a drain electrode, and a gate electrode provided with an insulator layer interposed between these electrodes, and a logic circuit.
- the semiconductor layer is usually formed of a semiconductor material.
- inorganic semiconductor materials centering on silicon are used for field effect transistors, and thin film transistors in which a semiconductor layer is formed on a substrate such as glass using amorphous silicon are used for displays and the like. ing.
- field effect transistors using organic semiconductor materials for field effect transistors are being actively researched and developed.
- an organic material By using an organic material, it is possible to manufacture in a low temperature process that does not require high temperature processing, and the range of substrate materials that can be used is expanded. As a result, it has become possible to produce a field effect transistor that is more flexible, lighter, and less likely to break.
- a technique such as application of a solution in which a semiconductor material is dissolved, printing by ink jet, or the like may be employed, so that a large area field effect transistor may be manufactured at low cost.
- various compounds can be selected as the compound for the organic semiconductor material, and an expression of an unprecedented function utilizing the characteristics is expected.
- an organic compound is used as a semiconductor material.
- a material using pentacene, thiophene, or an oligomer or polymer thereof is already known as a material having a hole transport property (patents).
- Pentacene is an acene-based aromatic hydrocarbon in which five benzene rings are linearly condensed.
- a field effect transistor using this as a semiconductor material has a charge mobility comparable to amorphous silicon currently in practical use. It has been reported to show (carrier mobility).
- a field effect transistor using pentacene is deteriorated due to the environment and has a problem in stability.
- Patent Documents 3 and 4 and Patent Document 5 are cited as prior documents of DNTT derivatives having a substituent, and examples of the substituent include a methyl group, a hexyl group, an alkoxyl group, and a substituted ethynyl group.
- Examples of the substituents of DNTT derivatives mentioned as examples include only a methyl group and a substituted ethynyl group, and presently present only semiconductor characteristics equivalent to or lower than those of DNTT having no substituent.
- the present invention provides an organic compound, a semiconductor material comprising the compound, a field effect transistor having a semiconductor layer formed from the compound, and a method for producing the same, having characteristics as a practical semiconductor exhibiting excellent carrier mobility.
- the purpose is to do.
- DNTT dinaphtho [2,3-b: 2 ′, 3′-f] thieno [3,2-b] thiophene having a C5 to C16 alkyl group.
- the present invention in one embodiment thereof, (1) a heterocyclic compound represented by the following formula (1), (In the formula, X 1 and X 2 each independently represent a sulfur atom or a selenium atom, and R 1 and R 2 each independently represent a C5-C16 alkyl group.) (2) The heterocyclic compound according to (1), wherein R 1 and R 2 in formula (1) are each independently a linear C5-C16 alkyl group, (3) The heterocyclic compound according to (1), wherein R 1 and R 2 in Formula (1) are each independently a branched C5-C16 alkyl group, (4) The heterocyclic compound according to any one of (1) to (3), wherein R 1 and R 2 in Formula (1) are each independently a C6-C14 alkyl group, (5) The heterocyclic compound according to any one of (1) to (4), wherein X 1 and X 2 are both sulfur atoms in formula (1), (6) A method for producing an intermediate compound represented by formula (B) in the production of a heterocyclic compound represented by
- a method for producing a field effect transistor comprising a step of forming a semiconductor layer comprising at least one heterocyclic compound represented by the following formula (1) on a substrate, (Wherein, X 1 and X 2 each independently represent a sulfur atom or a selenium atom, each R 1 and R 2 are independently C5-C16 alkyl group.) (15) The method for producing a field effect transistor according to (14), wherein the semiconductor layer is formed by a vapor deposition method, (16) The method for producing a field effect transistor according to (14), wherein the heterocyclic compound represented by the formula (1) according to (1) is dissolved in an organic solvent and applied to form a semiconductor layer, (17) The method of manufacturing a field effect transistor according to any one of (14) to (16), wherein a heat treatment is performed after the semiconductor layer is formed on the substrate.
- Fine particles of a heterocyclic compound represented by the formula (1) according to (1) (19) The fine particles according to (18), wherein the average particle diameter is 5 nm or more and 50 ⁇ m or less, (20) The method for producing fine particles according to (18) or (19), wherein the fine particles are precipitated by cooling or mixing a solution in which the heterocyclic compound is dissolved in an organic solvent.
- a method for producing fine particles (21) The method for producing fine particles according to (18) or (19), wherein the fine particles are precipitated by mixing a solution obtained by dissolving the heterocyclic compound in an organic solvent with a polar solvent.
- Production method of fine particles (22) The method for producing fine particles according to (20), wherein the organic solvent for dissolving the heterocyclic compound has a boiling point of 100 ° C. or higher. (23) A dispersion of fine particles of a heterocyclic compound, wherein the fine particles according to (18) or (19) are dispersed in a solvent, (24) A method for producing a dispersion according to (23), comprising a step of dispersing the fine particles according to (18) or (19) in a solvent by mechanical stress.
- Manufacturing method (25) Ink for producing a semiconductor device comprising the fine particles according to (18) or (19) or the dispersion according to (23), (26) The method for producing a field effect transistor according to (14), wherein the semiconductor layer is formed by applying the semiconductor device manufacturing ink according to (25), (27) The method of manufacturing a field effect transistor according to (26), wherein a heat treatment is performed after the semiconductor layer is formed on the substrate. About.
- FIG. 1 is a schematic view showing an embodiment of the field effect transistor of the present invention.
- FIG. 2 is a schematic view of a process for manufacturing one embodiment of the field effect transistor of the present invention.
- FIG. 3 is a schematic view of the field effect transistor of the present invention obtained in Example 1.
- the present invention relates to an organic field effect transistor using a specific organic compound as a semiconductor material, wherein a semiconductor layer is formed using the compound represented by the formula (1) as a semiconductor material. Therefore, first, the compound of the above formula (1) will be described.
- X 1 and X 2 each independently represent a sulfur atom or selenium atom, and R 1 and R 2 each independently represent a C5-C16 alkyl group.
- X 1 and X 2 are each independently a sulfur atom or a selenium atom, preferably a sulfur atom. X 1 and X 2 are more preferably the same, more preferably the same and a sulfur atom.
- alkyl group for R 1 and R 2 examples include linear, branched or cyclic alkyl groups, and the carbon number thereof is 5 to 16, preferably 6 to 14, and more preferably 8 to 12. More preferably, it is 10.
- specific examples of the linear alkyl group include n-pentyl, n-hexyl, n-heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl and the like.
- branched chain alkyl group examples include C5-C16 saturated branched chain alkyl groups such as i-hexyl and i-decyl.
- cyclic alkyl group examples include C5-C16 cycloalkyl groups such as cyclohexyl, cyclopentyl, adamantyl and norbornyl.
- a saturated alkyl group is preferable to unsaturated, and an unsubstituted one is preferable to one having a substituent.
- R 1 and R 2 each independently represent the above alkyl group, and may be the same or different, but are preferably the same.
- the compound represented by the formula (1) can be synthesized by a known method disclosed in Patent Document 3 and Non-Patent Document 1.
- 2-alkyl-7-methylthio-6-naphthaldehyde of the following formula (B) is obtained from 2-alkyl-6-naphthaldehyde represented by the following formula (A).
- 1,2-bis (2-alkyl-7-methylthio-6-naphthyl) ethylene of (C) can be obtained.
- the target compound 2,9-alkyldinaphtho [2,3-b: 2 ′, 3′-f] thieno [3,2-b] thiophene of the following formula (D) can be obtained.
- compound (B) is obtained by reacting compound (A) with dimethyl sulfide, and condensate (C) is obtained by McMurry coupling.
- the target product (D) can be obtained by carrying out a ring-closing reaction using iodine in chloroform.
- the purification method of the compound represented by Formula (1) is not particularly limited, and known methods such as recrystallization, column chromatography, and vacuum sublimation purification can be employed. Moreover, you may use combining these methods as needed.
- Table 1 shows specific examples of the compound represented by the formula (1).
- n represents normal, i represents iso, s represents secondary, t represents tertiary, and cy represents cyclo.
- a field effect transistor (Field effect transistor, hereinafter abbreviated as FET) of the present invention has two electrodes (a source electrode and a drain electrode) in contact with a semiconductor, and a current flowing between the electrodes is connected to a gate electrode. It is controlled by a voltage applied to another electrode called.
- FET Field effect transistor
- a structure in which a gate electrode is insulated by an insulating film is often used for a field effect transistor.
- An insulating film using a metal oxide film is called a MOS structure.
- a gate electrode is formed via a Schottky barrier, that is, an MES structure, but in the case of an FET using an organic semiconductor material, an MIS structure is often used.
- FIG. 1 shows some examples of the field effect transistor (element) of the present invention.
- 1 represents a source electrode
- 2 represents a semiconductor layer
- 3 represents a drain electrode
- 4 represents an insulator layer
- 5 represents a gate electrode
- 6 represents a substrate.
- positioning of each layer and an electrode can be suitably selected according to the use of an element.
- a to D are called lateral FETs because a current flows in a direction parallel to the substrate.
- A is called a bottom contact structure, and B is called a top contact structure.
- C is a structure often used for producing an organic single crystal FET.
- a source and drain electrodes and an insulator layer are provided on a semiconductor, and a gate electrode is further formed thereon.
- D has a structure called a top & bottom contact type transistor.
- E is a schematic diagram of an FET having a vertical structure, that is, a static induction transistor (SIT).
- SIT static induction transistor
- a large amount of carriers can move at a time because the current flow spreads in a plane.
- the source electrode and the drain electrode are arranged vertically, the distance between the electrodes can be reduced, so that the response is fast. Therefore, it can be preferably applied to uses such as flowing a large current or performing high-speed switching.
- FIG. 1E does not indicate a substrate, but in the normal case, a substrate is provided outside the source and drain electrodes represented by 1 and 3 in FIG. 1E.
- the substrate 6 needs to be able to hold each layer formed thereon without peeling off.
- an insulating material such as a resin plate, film, paper, glass, quartz, ceramic, etc .; a material in which an insulating layer is formed by coating or the like on a conductive substrate such as a metal or an alloy; Materials composed of combinations; etc.
- the resin film that can be used include polyethylene terephthalate, polyethylene naphthalate, polyethersulfone, polyamide, polyimide, polycarbonate, cellulose triacetate, polyetherimide, and the like.
- the element can have flexibility, is flexible and lightweight, and improves practicality.
- the thickness of the substrate is usually 1 ⁇ m to 10 mm, preferably 5 ⁇ m to 5 mm.
- a conductive material is used for the source electrode 1, the drain electrode 3, and the gate electrode 5.
- metals such as platinum, gold, silver, aluminum, chromium, tungsten, tantalum, nickel, cobalt, copper, iron, lead, tin, titanium, indium, palladium, molybdenum, magnesium, calcium, barium, lithium, potassium, sodium, etc.
- conductive alloys such as InO 2 , ZnO 2 , SnO 2 , ITO; conductive polymer compounds such as polyaniline, polypyrrole, polythiophene, polyacetylene, polyparaphenylene, vinylene, polydiacetylene; silicon, germanium And semiconductors such as gallium arsenide; carbon materials such as carbon black, fullerene, carbon nanotubes, and graphite; In addition, the conductive polymer compound or the semiconductor may be doped.
- the dopant examples include inorganic acids such as hydrochloric acid and sulfuric acid; organic acids having an acidic functional group such as sulfonic acid; Lewis acids such as PF 5 , AsF 5 and FeCl 3 ; halogen atoms such as iodine; lithium, Metal atoms such as sodium and potassium; and the like. Boron, phosphorus, arsenic and the like are also frequently used as dopants for inorganic semiconductors such as silicon.
- a conductive composite material in which carbon black, metal particles, or the like is dispersed in the above dopant is also used.
- the source and drain electrodes are in direct contact with the semiconductor material and serve to inject charges such as electrons and holes into the semiconductor.
- the distance (channel length) between the source and drain electrodes is an important factor that determines the characteristics of the device.
- the channel length is usually 0.1 to 300 ⁇ m, preferably 0.5 to 100 ⁇ m. If the channel length is short, the amount of current that can be extracted increases.
- the width between the source and drain electrodes is usually 10 to 10,000 ⁇ m, preferably 100 to 5000 ⁇ m. Further, this channel width can be made longer by forming the electrode structure into a comb structure, etc., and may be set to an appropriate length depending on the required amount of current or the structure of the element. .
- Each structure (shape) of the source and drain electrodes will be described.
- the structure of the source and drain electrodes may be the same or different. When it has a bottom contact structure, it is generally preferable to form each electrode using a lithography method and form it in a rectangular parallelepiped.
- the length of the electrode may be the same as the channel width.
- the width of the electrode is usually 0.1 to 1000 ⁇ m, preferably 0.5 to 100 ⁇ m.
- the thickness of the electrode is usually 0.1 to 1000 nm, preferably 1 to 500 nm, more preferably 5 to 200 nm.
- a wiring is connected to each of the electrodes 1, 3, and 5, and the wiring is also made of the same material as the electrode.
- An insulating material is used for the insulator layer 4.
- polymers such as polyparaxylylene, polyacrylate, polymethyl methacrylate, polystyrene, polyvinylphenol, polyamide, polyimide, polycarbonate, polyester, polyvinyl alcohol, polyvinyl acetate, polyurethane, polysulfone, epoxy resin, phenol resin, and combinations thereof Copolymers;
- Fluorine-based resins such as fluorine-containing acrylic resins and fluorine-containing polyimides, condensation-type fluorine-containing polymers, fluorine-containing ether polymers, and fluorine-containing cyclic ether polymers; silicon dioxide, aluminum oxide, titanium oxide, tantalum oxide, etc.
- the film thickness of the insulator layer 4 varies depending on the material, but is usually 0.1 nm to 100 ⁇ m, preferably 0.5 nm to 50 ⁇ m, more preferably 1 nm to 10 ⁇ m.
- the compound represented by the formula (1) is used as the material of the semiconductor layer 2.
- the compound may be a mixture, but the compound represented by the formula (1) is usually contained in the semiconductor layer in an amount of usually 50% by weight or more, preferably 80% by weight or more, more preferably 95% by weight or more. .
- other organic semiconductor materials and various additives may be mixed as necessary.
- the semiconductor layer 2 may be composed of a plurality of layers.
- At least one heterocyclic compound represented by the formula (1) is used as a semiconductor material, and the semiconductor material is substantially a heterocyclic compound represented by the formula (1) It is preferable to use only a compound, and it is particularly preferable to use a single heterocyclic compound as a semiconductor material rather than a mixture of a plurality of heterocyclic compounds represented by the formula (1).
- additives such as dopants are not prevented from being contained.
- the additive is usually added in the range of 0.01 to 10% by weight, preferably 0.05 to 5% by weight, more preferably 0.1 to 3% by weight, based on the total amount of the semiconductor material. .
- a plurality of layers may also be formed for the semiconductor layer, but a single layer structure is more preferable.
- the thickness of the semiconductor layer 2 is preferably as thin as possible without losing necessary functions. In lateral field effect transistors as shown in A, B, and D, the device characteristics do not depend on the film thickness if the film thickness exceeds a predetermined value, while the leakage current may increase as the film thickness increases. This is because there are many.
- the film thickness of the semiconductor layer for exhibiting necessary functions is usually 1 nm to 10 ⁇ m, preferably 5 nm to 5 ⁇ m, more preferably 10 nm to 3 ⁇ m.
- other layers can be provided between the substrate and the insulating film layer, between the insulating film layer and the semiconductor layer, or on the outer surface of the element as necessary.
- a protective layer is formed directly on the semiconductor layer or via another layer, the influence of outside air such as humidity can be reduced, and the ON / OFF ratio of the element can be increased.
- the material of the protective layer is not particularly limited.
- films made of various resins such as acrylic resin such as epoxy resin and polymethyl methacrylate, polyurethane, polyimide, polyvinyl alcohol, fluororesin, polyolefin, etc .; silicon oxide, aluminum oxide, nitriding
- An inorganic oxide film such as silicon; a film made of a dielectric such as a nitride film; and the like are preferably used.
- a resin (polymer) having a low oxygen and moisture permeability and a low water absorption rate is preferable.
- protective materials developed for organic EL displays can also be used.
- the thickness of the protective layer can be selected according to the purpose, but is usually 100 nm to 1 mm.
- the characteristics of organic semiconductor materials may vary depending on the state of the film, such as molecular orientation.
- the degree of hydrophilicity / hydrophobicity of the substrate surface the film quality of the film formed thereon can be improved.
- the characteristics of organic semiconductor materials can vary greatly depending on the state of the film, such as molecular orientation. Therefore, the surface treatment on the substrate or the like controls the molecular orientation at the interface between the substrate and the semiconductor layer to be formed thereafter, and reduces the trap sites on the substrate and the insulator layer.
- the trap site refers to a functional group such as a hydroxyl group present in an untreated substrate. When such a functional group is present, electrons are attracted to the functional group, and as a result, carrier mobility is lowered. . Therefore, reducing trap sites is often effective for improving characteristics such as carrier mobility.
- Examples of the substrate treatment for improving the characteristics as described above include hydrophobization treatment with hexamethyldisilazane, cyclohexene, octyltrichlorosilane, octadecyltrichlorosilane, etc .; acid treatment with hydrochloric acid, sulfuric acid, acetic acid, etc .; sodium hydroxide, Alkaline treatment with potassium hydroxide, calcium hydroxide, ammonia, etc .; ozone treatment; fluorination treatment; plasma treatment with oxygen or argon; Langmuir / Blodgett film formation treatment; other insulator or semiconductor thin film formation treatment; Examples include mechanical treatment; electrical treatment such as corona discharge; and rubbing treatment using fibers and the like.
- the field effect transistor using the compound of the present invention is characterized in that the influence of the material on the substrate or the insulator layer is small. This eliminates the need for more costly processing and surface condition adjustment, and allows a wider range of materials to be used, leading to versatility and cost reduction.
- a vacuum deposition method for example, a vacuum deposition method, a sputtering method, a coating method, a printing method, a sol-gel method, or the like can be appropriately employed as a method for providing each layer such as an insulating film layer and a semiconductor layer.
- the field effect transistor of the present invention is manufactured by providing various layers and electrodes necessary on the substrate 6 (see FIG. 2A).
- the substrate those described above can be used. It is also possible to perform the above-described surface treatment or the like on this substrate.
- the thickness of the substrate 6 is preferably thin as long as necessary functions are not hindered. Although it varies depending on the material, it is usually 1 ⁇ m to 10 mm, preferably 5 ⁇ m to 5 mm. Further, if necessary, the substrate may have an electrode function.
- a gate electrode 5 is formed on the substrate 6 (see FIG. 2B).
- the electrode material described above is used as the electrode material.
- various methods can be used. For example, a vacuum deposition method, a sputtering method, a coating method, a thermal transfer method, a printing method, a sol-gel method, and the like are employed. It is preferable to perform patterning as necessary so as to obtain a desired shape during or after film formation.
- Various methods can be used as the patterning method, and examples thereof include a photolithography method combining photoresist patterning and etching.
- the film thickness of the gate electrode 5 varies depending on the material, but is usually 0.1 nm to 10 ⁇ m, preferably 0.5 nm to 5 ⁇ m, and more preferably 1 nm to 3 ⁇ m. Moreover, when it serves as a gate electrode and a board
- insulator layer 4 is formed over the gate electrode 5 (see FIG. 2 (3)).
- the insulator material those described above are used.
- Various methods can be used to form the insulator layer 4. For example, spin coating, spray coating, dip coating, casting, bar coating, blade coating and other coating methods, screen printing, offset printing, inkjet printing methods, vacuum deposition, molecular beam epitaxial growth, ion cluster beam method, ion plating Examples thereof include dry process methods such as a coating method, a sputtering method, an atmospheric pressure plasma method, and a CVD method.
- the insulator layer 4 is preferably as thin as possible without impairing its function. Usually, the thickness is from 0.1 nm to 100 ⁇ m, preferably from 0.5 nm to 50 ⁇ m, more preferably from 5 nm to 10 ⁇ m.
- the source electrode 1 and the drain electrode 3 can be formed in accordance with the case of the gate electrode 5 (see FIG. 2 (4)).
- the semiconductor material an organic material containing a total of one or more kinds of heterocyclic compounds represented by the formula (1) in a total amount of usually 50% by weight or more is used.
- Various methods can be used for forming the semiconductor layer. Formation method in vacuum process such as sputtering method, CVD method, molecular beam epitaxial growth method, vacuum deposition method; coating method such as dip coating method, die coater method, roll coater method, bar coater method, spin coating method, ink jet method, It is roughly classified into solution forming methods such as screen printing, offset printing, and microcontact printing.
- the method of forming into a film by a vacuum process and forming an organic-semiconductor layer is preferable, A vacuum deposition method is more preferable. It is possible to form a film by a solution process, and it is possible to adopt a printing method at a low cost.
- a method for obtaining an organic semiconductor layer by depositing an organic material by a vacuum process will be described.
- the organic material is heated in a crucible or a metal boat under vacuum, and the evaporated organic material is attached (deposited) to a substrate (exposed portions of the insulator layer, the source electrode and the drain electrode), that is, A vacuum deposition method is preferably employed.
- the degree of vacuum is usually 1.0 ⁇ 10 ⁇ 1 Pa or less, preferably 1.0 ⁇ 10 ⁇ 3 Pa or less.
- the characteristics of the organic semiconductor film and thus the field effect transistor may change depending on the substrate temperature during vapor deposition, it is necessary to carefully select the substrate temperature.
- the substrate temperature at the time of vapor deposition is usually 0 to 200 ° C., preferably 10 to 150 ° C., more preferably 15 to 120 ° C., further preferably 25 to 100 ° C., and particularly preferably 40 to 80 ° C. ° C.
- the deposition rate is usually 0.001 nm / second to 10 nm / second, preferably 0.01 nm / second to 1 nm / second.
- the film thickness of the organic semiconductor layer made of an organic material is usually 1 nm to 10 ⁇ m, preferably 5 nm to 5 ⁇ m, more preferably 10 nm to 3 ⁇ m.
- the sputtering method in which accelerated ions such as argon collide against the material target to knock out material atoms and adhere to the substrate. May be used.
- the semiconductor material in the present invention is an organic compound and is a relatively low molecular compound, such a vacuum process can be preferably used. Although such a vacuum process requires somewhat expensive equipment, there is an advantage that a uniform film can be easily obtained with good film formability.
- a solution process that is, a coating method can also be suitably used.
- the method will be described.
- the semiconductor material containing the heterocyclic compound represented by the formula (1) in the present invention can be dissolved in an organic solvent, and practical semiconductor characteristics can be obtained by a solution process.
- the manufacturing method by the coating method is advantageous in that a large-area field effect transistor can be realized at a low cost because it is not necessary to make the manufacturing environment vacuum or high temperature.
- an ink for preparing a semiconductor device is prepared by dissolving a heterocyclic compound of the formula (1) in a solvent.
- the solvent at this time is not particularly limited as long as the compound dissolves and a film can be formed on the substrate.
- the solvent is preferably an organic solvent, specifically, halogeno hydrocarbon solvents such as chloroform, methylene chloride, dichloroethane; alcohol solvents such as methanol, ethanol, isopropyl alcohol, butanol; octafluoropentanol, pentafluoropropanol, etc.
- Fluorinated alcohol solvents such as ethyl acetate, butyl acetate, ethyl benzoate and diethyl carbonate; toluene, hexylbenzene, xylene, mesitylene, chlorobenzene, dichlorobenzene, methoxybenzene, chloronaphthalene, methylnaphthalene, tetrahydronaphthalene, etc.
- Aromatic hydrocarbon solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone; dimethylforma De, dimethyl acetamide, amide solvents such as N- methylpyrrolidone; tetrahydrofuran, diisobutyl ether, ether solvents diphenyl ether, etc .; octane, decane, decalin, hydrocarbon solvents such as cyclohexane may be used. These can be used alone or in combination. In addition, additives and other semiconductor materials can be mixed for improving the film formability of the semiconductor layer and for doping described later.
- additives mainly include polymer compounds (eg, organic synthetic polymer compounds, organic natural polymer compounds, inorganic polymer compounds, etc.), specifically synthetic resins, Examples thereof include plastic, polyvinyl chloride, polyethylene, phenol resin, acrylic resin, amide resin, ester resin, nylon, vinylon, polyethylene terephthalate, synthetic rubber, polyisoprene, acrylic rubber, acrylonitrile rubber, and urethane rubber.
- polymer compounds eg, organic synthetic polymer compounds, organic natural polymer compounds, inorganic polymer compounds, etc.
- resins examples thereof include plastic, polyvinyl chloride, polyethylene, phenol resin, acrylic resin, amide resin, ester resin, nylon, vinylon, polyethylene terephthalate, synthetic rubber, polyisoprene, acrylic rubber, acrylonitrile rubber, and urethane rubber.
- these polymer materials are roughly classified into conductive polymer compounds, semiconducting polymer compounds, and insulating polymer compounds when classified from the viewpoint of electrical characteristics.
- the conductive polymer compound is a polymer compound characterized by having a ⁇ electron skeleton developed in the molecule and exhibiting electrical conductivity.
- Specific examples of conductive polymer compounds include polyacetylene polymers, polydiacetylene polymers, polyparaphenylene polymers, polyaniline polymers, polytriphenylamine polymers, polythiophene polymers, polypyrrole polymers. , Polyparaphenylene vinylene polymer, polyethylene dioxythiophene polymer, polyethylene dioxythiophene / polystyrene sulfonic acid mixture (general name, PEDOT-PSS), nucleic acids and their derivatives, many of which are doped The conductivity is improved.
- polyacetylene polymer polyparaphenylene polymer, polyaniline polymer, polytriphenylamine polymer, polythiophene polymer, polypyrrole polymer, polyparaphenylene vinylene polymer A polymer or the like is more preferable.
- the semiconducting polymer compound is a polymer compound characterized by exhibiting semiconductivity.
- Specific examples of semiconducting polymer compounds include polyacetylene polymers, polydiacetylene polymers, polyparaphenylene polymers, polyaniline polymers, polytriphenylamine polymers, polythiophene polymers, polypyrrole polymers. , Polyparaphenylene vinylene polymer, polyethylene dioxythiophene polymer, nucleic acid and derivatives thereof.
- polyacetylene polymers, polyaniline polymers, polytriphenylamine polymers, polythiophene polymers, polypyrrole polymers, polyparaphenylene vinylene polymers, and the like are preferable.
- the semiconducting polymer compound exhibits conductivity by doping, and may have conductivity depending on the doping amount.
- the insulating polymer compound is a polymer compound characterized by exhibiting insulating properties, and most of the polymer material other than the conductive or semiconductive polymer material is an insulating polymer material.
- Specific examples include acrylic polymers, polyethylene polymers, polymethacrylate polymers, polystyrene polymers, polyethylene terephthalate polymers, nylon polymers, polyamide polymers, polyester polymers, vinylon polymers. Examples thereof include molecules, polyisoprene polymers, cellulose polymers, copolymer polymers, and derivatives thereof.
- the concentration of the total amount of the heterocyclic compound of formula (1) or a mixture thereof in the ink varies depending on the type of solvent and the film thickness of the semiconductor layer to be produced, but is usually about 0.001% to 50%, preferably It is about 0.01% to 20%.
- a semiconductor material containing the heterocyclic compound of the formula (1) or the like is dissolved in the above solvent, and if necessary, a heat dissolution treatment is performed. Furthermore, the obtained solution is filtered using a filter or the like, and solids such as impurities are removed to obtain an ink for manufacturing a semiconductor device. When such an ink is used, the film formability of the semiconductor layer is improved, which is preferable for manufacturing the semiconductor layer.
- the fine particles of the present invention usually have an average particle diameter of 5 nm to 50 ⁇ m. Preferably they are 10 nm or more and 10 micrometers or less. More preferably, it is 20 nm or more and 5 ⁇ m or less. If it is too small, it is affected by secondary aggregation, and if it is too large, the dispersion stability may be lowered.
- the heterocyclic compound of the present invention is dissolved in a solvent to form a solution. Fine particles of the heterocyclic compound of the present invention can be obtained by cooling this solution or by precipitating it by mixing it with a separately prepared solvent.
- the solvent for dissolving the compound of the present invention is not particularly limited as long as the compound can be dissolved.
- the solvent is preferably an organic solvent, specifically, a halogeno hydrocarbon solvent such as chloroform, methylene chloride, or dichloroethane; an alcohol solvent such as methanol, ethanol, isopropyl alcohol, or butanol; an octafluoropentanol, pentafluoropropanol, or the like.
- Fluorinated alcohol solvents such as ethyl acetate, butyl acetate, ethyl benzoate and diethyl carbonate; toluene, hexylbenzene, xylene, mesitylene, chlorobenzene, bromobenzene, dichlorobenzene, chlorotoluene, methoxybenzene, chloronaphthalene, Aromatic hydrocarbon solvents such as methylnaphthalene and tetrahydronaphthalene; acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, etc.
- ester solvents such as ethyl acetate, butyl acetate, ethyl benzoate and diethyl carbonate
- toluene such as ethyl acetate, butyl acetate, ethyl benzoate and diethy
- Ketone solvents Amides solvents such as dimethylformamide, dimethylacetamide and N-methylpyrrolidone; Ether solvents such as tetrahydrofuran, diisobutyl ether and diphenyl ether; Hydrocarbons such as octane, decane, decalin, cyclohexane, dichloroethane and chlorohexane A solvent etc. can be used. These can be used alone or in combination.
- the solvent for dissolving the heterocyclic compound of the present invention used at that time is preferably a solvent having a boiling point of 100 ° C. or more, and more preferably a hydrocarbon solvent.
- aromatic hydrocarbon solvents such as toluene, hexylbenzene, xylene, mesitylene, chlorobenzene, dichlorobenzene, methoxybenzene, chloronaphthalene, methylnaphthalene and tetrahydronaphthalene; hydrocarbons such as octane, decane, decalin and cyclohexane A solvent etc. are mentioned.
- aromatic hydrocarbon solvents such as toluene, xylene, dichlorobenzene, methylnaphthalene and tetrahydronaphthalene are used. These solvents have a high boiling point, and can easily be used more effectively by heating to easily obtain a difference in solubility from room temperature.
- the solvent prepared separately may be any of the solvents listed above, but polar solvents are preferred, for example, alcohol solvents such as methanol, ethanol, isopropyl alcohol, butanol; octafluoropentanol, pentafluoropropanol, etc.
- alcohol solvents such as methanol, ethanol, isopropyl alcohol, butanol; octafluoropentanol, pentafluoropropanol, etc.
- Fluorinated alcohol solvents such as ethyl acetate, butyl acetate, ethyl benzoate and diethyl carbonate; ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone and cyclohexanone; dimethylformamide, dimethylacetamide, N -Amide solvents such as methylpyrrolidone.
- Alcohol solvents such as ethanol, isopropyl alcohol and butanol are particularly preferable in view of handling.
- the heterocyclic compound of the present application is heated and dissolved using the above-mentioned solvent to form a solution, and the solution can be cooled to precipitate fine particles.
- the above-mentioned solvent having a high boiling point and heating it is easy to obtain a difference in solubility from room temperature, and it is possible to precipitate more effectively.
- a cooling method External cooling of the container containing a solution, quenching the solution with the volatilization heat by spraying, etc. are mentioned.
- methods such as a solvent milling method, a salt milling method, an acid pasting method, and an acid slurry method can be used as appropriate so as to refine the pigment fine particles.
- a dispersion can be prepared by dispersing these fine particles in a solvent to obtain an ink for producing a semiconductor device.
- the solvent to be used may be the solvent described in the above section for dissolving the heterocyclic compound of the present invention. It is also preferable to use the solvent used when depositing the fine particles as a dispersion.
- the method for producing the dispersion is not particularly limited, but generally, a known method can be used as a method for producing the dispersion, and a dispersion method using mechanical stress is particularly preferable. Examples thereof include a dispersion method using a kneader, an attritor, a roll mill, a bead mill, a paint shaker, a disperser, and the like.
- a dispersing agent, a dispersing aid or the like can be added as needed, and the dispersion can be stably performed.
- a dispersing agent, a dispersing aid or the like can be added as needed, and the dispersion can be stably performed.
- the semiconductor element manufacturing ink prepared as described above is applied to the substrate (exposed portions of the insulator layer, the source electrode, and the drain electrode).
- Coating methods include casting, spin coating, dip coating, blade coating, wire bar coating, spray coating, and other coating methods, inkjet printing, screen printing, offset printing, letterpress printing, and other micro contact printing methods.
- the method of soft lithography, etc., or a method combining a plurality of these methods can be employed.
- the Langmuir project method in which a monomolecular film of a semiconductor layer produced by dropping the above-described ink on the water surface is transferred to a substrate and laminated, and two substrates of liquid crystal or melted material are used.
- the film thickness of the organic semiconductor layer produced by this method is preferably thinner as long as the function is not impaired. There is a concern that the leakage current increases as the film thickness increases.
- the film thickness of the organic semiconductor layer is usually 1 nm to 10 ⁇ m, preferably 5 nm to 5 ⁇ m, more preferably 10 nm to 3 ⁇ m.
- the characteristics of the semiconductor layer thus formed can be further improved by post-processing.
- semiconductor characteristics can be improved and stabilized by heat treatment. This is considered to be due to the fact that distortion in the film caused by heat treatment during film formation is alleviated, pinholes and the like are reduced, and the arrangement and orientation in the film can be controlled.
- This heat treatment is performed by heating the substrate after forming the semiconductor layer.
- the temperature of the heat treatment is not particularly limited, but is usually about room temperature to 200 ° C., preferably 80 to 180 ° C., more preferably 120 to 150 ° C.
- the heat treatment time at this time is not particularly limited, but is usually about 1 minute to 24 hours, preferably about 2 minutes to 3 hours.
- the atmosphere at that time may be air, but may be an inert atmosphere such as nitrogen or argon.
- a property change due to oxidation or reduction may be induced by treatment with an oxidizing or reducing gas such as oxygen or hydrogen or an oxidizing or reducing liquid. it can. This is often used for the purpose of increasing or decreasing the carrier density in the film, for example.
- semiconductor layer characteristics can be changed by adding a trace amount of elements, atomic groups, molecules, and polymers to the semiconductor layer.
- elements for example, oxygen, hydrogen, hydrochloric acid, sulfuric acid, sulfonic acid and other acids; Lewis acids such as PF 5 , AsF 5 and FeCl 3 ; halogen atoms such as iodine; metal atoms such as sodium and potassium; .
- This can be achieved by bringing these gases into contact with the semiconductor layer, immersing them in a solution, or performing an electrochemical doping process.
- dopings may be added during the synthesis of the semiconductor material, even after the semiconductor layer is not formed, or may be added to the ink in the process of manufacturing the semiconductor layer using the semiconductor element manufacturing ink. It can be added in the process step of forming the precursor thin film disclosed in Patent Document 2.
- a material used for doping is added to the material for forming the semiconductor layer and co-evaporated, or mixed in an ambient atmosphere when the semiconductor layer is formed (in an environment where the doping material is present). A semiconductor layer is produced), and further, ions can be accelerated in a vacuum and collide with the film for doping.
- doping effects include a change in electrical conductivity due to an increase or decrease in carrier density, a change in carrier polarity (p-type or n-type), a change in Fermi level, and the like.
- Such doping is often used particularly in semiconductor elements using inorganic materials such as silicon.
- the protective layer 7 When the protective layer 7 is formed on the organic semiconductor layer, there is an advantage that the influence of outside air can be minimized and the electric characteristics of the organic field effect transistor can be stabilized (see FIG. 2 (6)).
- the above-mentioned materials are used as the protective layer material.
- the protective layer 7 may have any thickness depending on the purpose, but is usually 100 nm to 1 mm.
- Various methods can be employed to form the protective layer.
- the protective layer is made of a resin, for example, a method of applying a resin solution and then drying to form a resin film; applying or vapor-depositing a resin monomer The method of polymerizing afterwards; etc. can be adopted. Further, a crosslinking treatment may be performed after the film formation.
- the protective layer is made of an inorganic material, for example, a formation method in a vacuum process such as a sputtering method or a vapor deposition method, or a formation method in a solution process such as a sol-gel method can be used.
- a protective layer can be provided between the layers as necessary in addition to the organic semiconductor layer. These layers may help to stabilize the electrical properties of the organic field effect transistor.
- an organic material is used as a semiconductor material, it can be manufactured at a relatively low temperature process. Accordingly, flexible materials such as plastic plates and plastic films that could not be used under conditions exposed to high temperatures can be used as the substrate. As a result, it is possible to manufacture a light, flexible, and hard-to-break element, which can be used as a switching element for an active matrix of a display.
- the display include a liquid crystal display, a polymer dispersion type liquid crystal display, an electrophoretic display, an EL display, an electrochromic display, a particle rotation type display, and the like.
- the field effect transistor of the present invention can be used as a digital element and an analog element such as a memory circuit element, a signal driver circuit element, and a signal processing circuit element. Further, by combining these, it is possible to produce an IC card or an IC tag. Furthermore, since the field effect transistor of the present invention can change its characteristics by an external stimulus such as a chemical substance, it can be used as an FET sensor.
- the operating characteristics of the field effect transistor are determined by the carrier mobility of the semiconductor layer, the conductivity, the capacitance of the insulating layer, the element configuration (distance and width between source and drain electrodes, film thickness of the insulating layer, etc.), and the like.
- a semiconductor material used for the field effect transistor a material having higher carrier mobility when a semiconductor layer is formed is preferable.
- the heterocyclic compound of the formula (1) in the present invention has good film forming properties. Furthermore, pentacene derivatives are unstable and difficult to handle, such as decomposition in the atmosphere due to moisture contained in the atmosphere.
- the heterocyclic compound represented by the formula (1) of the present invention is a semiconductor.
- a transistor having a semiconductor layer formed of a heterocyclic compound represented by the formula (1) has a low threshold voltage, in actual use, a driving voltage is low and power consumption is conventional. It is effective for use in portable displays that require longer driving when using a rechargeable battery, for example.
- the consumption of energy is reduced by lowering the threshold voltage, and the barrier of charge injection from the electrode to the semiconductor film is reduced by lowering the threshold voltage, whereby the durability of the semiconductor element and the semiconductor device having the semiconductor element itself It is expected to be effective in improving
- Synthesis example 1 Synthesis of Methyl 6-octhynyl-2-naphtoate (100) A 50 mL three-necked flask was attached with a reflux tube and a dropping funnel, and purged with nitrogen. DMF (8 ml) was added and bubbled for 10 minutes. In a three-necked flask, methyl 6-bromo-2-naphthoate (1 g, 3.8 mmol), Pd (pph 3 ) 4 (218 mg, 0.12 mmol), NEt 3 (1.58 ml, 11.3 mmol) and CuI (36 mg, 0.19 mmol) ) And stirred.
- Toluene (8 ml) and 1-octyne (0.56 ml, 3.8 mmol) were placed in the dropping funnel and bubbled with Ar gas for 10 minutes, and then slowly added dropwise. Stirring at room temperature for 27.5 hours did not remove the starting material, so more 1-octyne (0.28 ml, 1.9 mmol) was added. After 4 hours, the reaction was stopped by adding water and 2N HCl to pH 7. The mixture was extracted with methylene chloride, the organic layer was dried over anhydrous magnesium, filtered, and then the solvent was distilled off with a rotary evaporator.
- Synthesis example 3 Synthesis of 2-hydroxymethyl-6-octylnaphthalene (102) Anhydrous THF (20 ml) and LAH (38 mg, 1 mmol) were placed in a 50 ml three-necked flask. While the flask was cooled in ice water, a solution of methyl 6-octylnaphthalenecarboxylate (101) (298 mg, 1 mmol) in anhydrous THF (5 ml) was slowly added dropwise. Stir at room temperature for 1 hour, pour the reaction into a beaker containing ice (30-40 ml) and add 2 N HCl.
- Synthesis example 4 Synthesis of 6-octyl-2-naphthaldehyde (103) 2-hydroxymethyl-6-octylnaphthalene (102) (858 mg, 3.18 mmol) was added to a 100 ml three-necked flask and dissolved in a CCl 4 (51 ml) solution. MnO 2 (5.46 mg, 64 mmol) was added and refluxed for 20 hours. After cooling to room temperature, the insoluble solid was removed by filtration. The solvent was distilled off from the filtrate using a rotary evaporator.
- Synthesis example 5 Synthesis of 3-Methylthio-6-octyl-2-naphthaldehyde (104)
- a 100-ml three-necked flask equipped with a dropping funnel was heated and dried to a nitrogen atmosphere, and N, N, N′-trimethyldiamine (0.93 ml, 7.3 mmol) and anhydrous THF (32 ml) were added and cooled to ⁇ 30 ° C.
- N, N, N′-trimethyldiamine (0.93 ml, 7.3 mmol
- anhydrous THF 32 ml
- reaction solution was extracted with methylene chloride, the organic layer was dried over anhydrous magnesium, filtered, and then the solvent was distilled off with a rotary evaporator.
- the resulting reaction mixture was purified by silica gel column chromatography using a mixed solvent of hexane: ethyl acetate 9: 1 as a mobile phase, and 3-methylthio-6-octyl-2-naphthaldehyde (815 mg, 2.6 mmol) as a yellow solid. , 58%).
- Synthesis Example 6 Synthesis of 1,2-Di (3-methylthio-6-octyl-2-naphthyl) ethylene (105) A 500 ml three-necked flask equipped with a dropping funnel and a reflux tube was purged with nitrogen, and THF (300 ml) was added. TiCl 4 (5.6 ml, 51 mmol) was added while the flask was cooled in an ice bath. Furthermore, Zn (3.3 g, 51 mmol) was added and refluxed for 2 hours.
- the obtained yellow solid was subjected to silica gel column chromatography using a CH 2 Cl 2 solvent as a mobile phase to remove the origin component, whereby 1,2-di (3-methylthio-6-octyl-2-naphthyl) ethylene ( 105) (4.2 g, 7.0 mmol, 83%).
- Example 1 Solubility Measurement Table 2 shows the solubility (g / L) in toluene at 60 ° C. By introducing an alkyl group as described above, the solubility in an organic solvent was improved, and the response to the coating process was improved.
- Example 2 (Top Contact Field Effect Transistor) An n-doped silicon wafer with 300 nm SiO 2 thermally oxidized film (surface resistance 0.02 ⁇ ⁇ cm or less) subjected to hexamethylene disilazane treatment was placed in a vacuum deposition apparatus, and the degree of vacuum in the apparatus was 5.0 ⁇ 10. Exhaust until -3 Pa or less. By this resistance heating deposition method, this electrode was subjected to compound no. 10 was deposited to a thickness of 50 nm to form a semiconductor layer (2). Next, a shadow mask for electrode preparation is attached to this substrate, and it is placed in a vacuum vapor deposition apparatus.
- the vacuum in the apparatus is evacuated to 1.0 ⁇ 10 ⁇ 4 Pa or less, and a gold electrode is formed by resistance heating vapor deposition. That is, the source electrode (1) and the drain electrode (3) were vapor-deposited to a thickness of 40 nm to obtain a TC (top contact) type field effect transistor of the present invention.
- the thermal oxide film in the n-doped silicon wafer with the thermal oxide film has the function of the insulating layer (4), and the n-doped silicon wafer serves as the substrate (6) and the gate electrode (5). ) (See FIG. 3).
- the obtained field effect transistor was installed in a prober, and semiconductor characteristics were measured using a semiconductor parameter analyzer 4155C (manufactured by Agilent). For semiconductor characteristics, the gate voltage was scanned from 10 V to -100 V in 20 V steps, the drain voltage was scanned from 10 V to -100 V, and the drain current-drain voltage was measured. As a result, current saturation was observed, and from the obtained voltage-current curve, the device showed a p-type semiconductor, the carrier mobility was 3.1 cm 2 / Vs, and the threshold voltage was ⁇ 10 V.
- Example 3 Compound No. used in Example 2 A TC field effect transistor was obtained in the same manner as in Example 2 using various compounds instead of 10. The results are shown in Table 3.
- Example 2 Various field effect transistors were obtained using a vacuum process in the same manner as in Example 2. Its characteristics are very high as a field effect transistor using a vapor deposition method using a normal organic substance as a semiconductor. This is a level comparable to the mobility of a field effect transistor using a single crystal, which is not feasible industrially, and a very high mobility was obtained by an industrially suitable vacuum deposition method. Since the field effect transistor of the present application has high performance, it has a very high industrial value such as an expanded range of usable applications.
- Example 4 (Change in characteristics of field effect transistor due to substrate processing) Surface treatment was performed on n-doped silicon wafers with 200 nm SiO 2 thermal oxide film using OTS-8 (octyltrichlorosilane), OTS-18 (octadecyloctadecylsilane), and HMDS (hexamethylenedisilazane), respectively. Vapor deposition was performed in the same manner as in Example 2 on this substrate and the Bare substrate that was not subjected to substrate processing, to produce a TC field effect transistor. Similarly, the results of measuring carrier mobility are shown in the table.
- OTS-8 octyltrichlorosilane
- OTS-18 octadecyloctadecylsilane
- HMDS hexamethylenedisilazane
- a compound not substituted with an alkyl group has a low mobility when a substrate that has not been surface-treated is used, but the mobility is improved by the surface treatment.
- the compound substituted with the long-chain alkyl group of the present invention exhibits high mobility even on a substrate that has not been surface-treated.
- no. The compound No. 12 has the highest mobility of 5.4 as a field effect transistor formed by the organic transistor deposition method in OTS-18, and the mobility of the element not subjected to surface treatment of the substrate is 3. 8 and has a very high mobility. This indicates that it is possible to show very high semiconductor characteristics regardless of the state of the substrate (insulating film), and that it is possible to reduce costs during manufacturing and to handle a wide variety of insulating films. It is clear that this is advantageous.
- Example 5 A resist material was applied onto an n-doped silicon wafer with a 300 nm SiO 2 thermal oxide film (surface resistance of 0.02 ⁇ ⁇ cm or less) and subjected to exposure patterning, and 1 nm of chromium and 40 nm of gold were deposited thereon. Next, the resist was peeled off to form a source electrode (1) and a drain electrode (3). The silicon wafer provided with this electrode was placed in a vacuum vapor deposition apparatus and evacuated until the degree of vacuum in the apparatus became 5.0 ⁇ 10 ⁇ 3 Pa or less. By this resistance heating deposition method, this electrode was subjected to compound no.
- the thermal oxide film in the n-doped silicon wafer with the thermal oxide film has the function of the insulating layer (4), and the n-doped silicon wafer is the substrate (6) and the gate layer (5). It also has a function (see FIG. 3).
- current saturation was observed, and from the obtained voltage-current curve, the device showed a p-type semiconductor, and the carrier mobility was 0.68 cm 2 / Vs.
- Example 6 The BC field-effect transistor obtained in Example 5 was subjected to heat treatment in the atmosphere at 150 ° C. for 1 hour, and then the semiconductor characteristics were measured. As a result, current saturation was observed, and the obtained voltage-current curve Further, this element was a p-type semiconductor, and the carrier mobility was 1.00 cm 2 / Vs.
- Example 7 Compound No. 5 used in Example 5 Using various compounds instead of 10, BC type field effect transistors were obtained in the same manner as in Examples 5 and 6. The results are shown in Table 5.
- the field effect transistor of the present application shows practical high mobility even in a bottom contact type structure, which usually tends to have poor characteristics. Furthermore, the heat resistance is high, and the mobility is improved by heating. On the other hand, the compound ref. In the case of 2 or a compound without an alkyl group (ref. 1), the mobility after annealing was lowered. Since there is a process that takes heat when creating various devices, it is necessary for the compound to withstand this heat, but as a result, the compound having a long-chain alkyl group is superior in the heat resistance to which the device is subjected. I found out.
- Example 8 A resist material was applied onto an n-doped silicon wafer with a 300 nm SiO 2 thermal oxide film (surface resistance of 0.02 ⁇ ⁇ cm or less) and subjected to exposure patterning, and 1 nm of chromium and 40 nm of gold were deposited thereon. Next, the resist was peeled off to form a source electrode (1) and a drain electrode (3).
- Compound No. A solution of 14 in 0.5% of 1,2-dichlorobenzene was prepared and heated to 100 ° C. to obtain an ink for manufacturing a semiconductor device. The silicon wafer provided with the previous electrode is heated to 100 ° C., and the semiconductor layer (2) is formed by casting the semiconductor device manufacturing ink at 100 ° C.
- the thermal oxide film in the n-doped silicon wafer with the thermal oxide film has the function of the insulating layer (4), and the n-doped silicon wafer is the substrate (6) and the gate layer (5). It also has a function (see FIG. 3).
- the comparative compound ref. 1 and ref In the case of using No.
- Example 9 HMDS is removed by UV irradiation using a mask on the channel region for forming the organic semiconductor thin film of the n-doped silicon wafer with 200 nm SiO 2 thermal oxide film treated with hexamethylene disilazane (HMDS) to form the lyophilic region. did. In the lyophilic region, Compound No. Ten 1-chloronaphthalene solutions (200 ° C.) were applied by drop casting and dried at 60 ° C. to form a semiconductor thin film (2). Next, a shadow mask for electrode preparation is attached to this substrate, and it is placed in a vacuum vapor deposition apparatus.
- HMDS hexamethylene disilazane
- the vacuum in the apparatus is evacuated to 1.0 ⁇ 10 ⁇ 4 Pa or less, and a gold electrode is formed by resistance heating vapor deposition. That is, the source electrode (1) and the drain electrode (3) were deposited to a thickness of 50 nm to obtain a field effect transistor of the present invention which is a TC (top contact) type.
- TC top contact
- Example 10 Compound No. A yellow solid (93.1 mg) of 12 (R 1 and R 2 are C 10 H 21 ) was dissolved in 95 ml of toluene by heating in the atmosphere to obtain a colorless solution. This solution was dropped onto 2-propanol (600 ml, room temperature) with strong stirring to obtain fine particles of the present invention. Then, once concentrated, 30 ml of 2-propanol was added, and further concentrated with an evaporator. A 1.02% dispersion of 12 (2-propanol solvent) was obtained. When this solution was spin-coated on a silicon substrate and observed with an optical microscope, it was found to be plate-like particles having an average particle diameter of 2 to 3 ⁇ m. This dispersion did not cause phase separation even after 2 weeks.
- Example 11 Compound No. A yellow solid (93.1 mg) of 12 (R 1 and R 2 are C 10 H 21 ) was dissolved in 95 ml of toluene by heating in the atmosphere to obtain a colorless solution. This solution was injected into 2-propanol (300 ml) with a syringe to obtain microparticles. Then, once concentrated, 30 ml of 2-propanol was added, and further concentrated with an evaporator. A 2.0% dispersion of 12 (2-propanol solvent) was obtained. When this solution was spin-coated on a silicon substrate and observed with an electron microscope, it was found to be plate-like particles having an average particle diameter of 200 nm.
- Example 12 Compound No. prepared in Example 11 Tetralin (11.4 ml) was added to 11.2 ml of a 2.0% dispersion (2-propanol solvent) of No. 12, and concentrated with an evaporator. A 2.0% dispersion of 12 (tetralin solvent, boiling point 207 ° C.) was obtained.
- Example 13 Compound No. prepared in Example 12 12 ml of a 12% dispersion (tetralin solvent), 2-propanol (3 ml) and beaded zirconia (30 ⁇ m, 4.8 g) were mixed and stirred with a stirrer (7000 rpm, 30 minutes, ice-cooled). Compound No. A 1.0% dispersion of 12 (tetralin and 2-propanol 1: 1 solvent) was obtained.
- Example 15 In the field effect transistor of the present invention which is a BC (bottom contact) type, the semiconductor layer (2) is formed by vapor deposition in Example 5.
- the compound No. 1 shown in Example 10 is used.
- current saturation was observed, and from the obtained voltage-current curve, the device showed a p-type semiconductor, the carrier mobility was 3.93 ⁇ 10 ⁇ 2 cm 2 / Vs, and the ON / OFF ratio was 1.10.
- Example 16 In the same manner as in Example 15, the semiconductor layer (2) was obtained in Example 12 using Compound No. A semiconductor device manufacturing ink (tetralin solvent, boiling point 207 ° C.) which is a 2.0% dispersion of No. 12 was formed by spin coating, and the formed spin coating film was subjected to heat treatment at 140 ° C. for 5 minutes. Above, compound no. 12 melted on the substrate to form a transparent thin film. As a result of measuring semiconductor characteristics as in Example 2, current saturation was observed, and from the obtained voltage-current curve, the device showed a p-type semiconductor, and the carrier mobility was 1.84 ⁇ 10 ⁇ 2 cm 2. / Vs.
- a semiconductor device manufacturing ink titanium dioxide, boiling point 207 ° C.
- Example 17 Topic Contact Field Effect Transistor Using Organic Insulating Film
- a polyimide resin solution (CT4112: manufactured by Kyocera Chemical Co., Ltd.) is formed on a cleaned glass substrate with ITO (15 ⁇ / ⁇ ) by spin coating (4000 rpm ⁇ 10 min), and the temperature is gradually raised under nitrogen.
- the organic insulating film was formed on the ITO substrate by heating at ° C for 1 hour.
- This substrate was placed in a vacuum deposition apparatus and evacuated until the degree of vacuum in the apparatus was 5.0 ⁇ 10 ⁇ 3 Pa or less.
- This glass substrate with an organic insulating film was subjected to compound no. 12 was deposited by resistance heating vapor deposition to a thickness of 50 nm to form a semiconductor layer.
- a shadow mask for electrode preparation was attached to this substrate, and it was placed in a vacuum deposition apparatus, and evacuated until the degree of vacuum in the apparatus became 1.0 ⁇ 10 ⁇ 4 Pa or less.
- gold electrodes that is, the source electrode (1) and the drain electrode (3) are vapor-deposited to a thickness of 40 nm by a resistance heating vapor deposition method to obtain a TC (top contact) type field effect transistor of the present invention. It was.
- the polyimide resin has a function of the insulating layer (4)
- the ITO film on the glass substrate (6) has the function of the gate electrode (5) (FIG. 3). reference).
- the obtained field effect transistor was installed in a prober, and semiconductor characteristics were measured using a semiconductor parameter analyzer 4155C (manufactured by Agilent). The semiconductor characteristics were measured by setting the drain voltage to ⁇ 60V and scanning the gate voltage from 40V to ⁇ 80V. From the resulting voltage-current curve, this device had a carrier mobility of 3.9 cm 2 / Vs and a threshold voltage of ⁇ 8 V. As a result, the field effect transistor using the organic insulating film using the compound of the present application showed very good characteristics, and could be applied to a flexible substrate or the like.
- Example 12 As described in Example 1, it was possible to cope with the coating process with No. By using a compound such as 12, it was possible to easily obtain dispersions as shown in Examples 10 to 11 in the air. Further, as shown in Example 12, for example, a dispersion was prepared with 2-propanol, and the change to a higher-boiling solvent became possible very easily. In addition, by using a dispersion (for example, Example 12) once changed to a high boiling point solvent and using an apparatus as shown in Example 13 as needed, dispersions of two different solvent compositions can be obtained. Of course, it was possible to prepare a solvent in which a plurality of solvents were combined by the same operation as in Example 13. Furthermore, by utilizing the fact that various polymers including polystyrene easily dissolve in an aromatic solvent such as toluene, as shown in Example 14, a dispersion liquid in which various polymers and compounds are easily added is prepared. It was also possible to prepare.
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Abstract
Description
置換基を有するDNTT誘導体の先行文献として特許文献3、4及び特許文献5が挙げられるが、具体例として挙げられる置換基としてはメチル基、ヘキシル基、アルコキシル基、置換エチニル基が挙げられ、実施例として挙げられるDNTT誘導体の置換基としてはメチル基と置換エチニル基しかなく、それぞれ置換基のないDNTTと同等又はそれ以下の半導体特性しか示していない現状がある。
(1)下記式(1)で表される複素環式化合物、
(式中、X1及びX2はそれぞれ独立に硫黄原子又はセレン原子を表し、R1及びR2はそれぞれ独立にC5-C16アルキル基を表す。)
(2)式(1)においてR1及びR2がそれぞれ独立に直鎖のC5-C16アルキル基である(1)に記載の複素環式化合物、
(3)式(1)においてR1及びR2がそれぞれ独立に分岐鎖のC5-C16アルキル基である(1)に記載の複素環式化合物、
(4)式(1)においてR1及びR2がそれぞれ独立にC6-C14アルキル基である(1)乃至(3)のいずれか一つに記載の複素環式化合物、
(5)式(1)においてX1及びX2がいずれも硫黄原子である(1)乃至(4)のいずれか一つに記載の複素環式化合物、
(6)下記式(1)で表される複素環式化合物の製造における式(B)で表される中間体化合物の製造方法であって、式(A)で表される化合物と、ブチルリチウム等のアルキル金属試薬とを添加し、更にジメチルジスルフィド、又はセレン及びヨウ化メチルを添加することを含む中間体化合物の製造方法、
(式中、X1及びX2はそれぞれ独立に硫黄原子又はセレン原子を表し、R1及びR2はそれぞれ独立にC5-C16アルキル基を表す。)
(両式中、Xは硫黄原子又はセレン原子を表し、RはC5-C16アルキル基を表す。)
(7)(1)に記載の下記式(1)で表される複素環式化合物の製造方法であって、下記式(B)で表される中間体化合物同士を反応させ、式(C)で表される化合物を得た後に、式(C)で表される化合物と、ヨウ素とを反応させることを含む、複素環式化合物の製造方法、
(式中、X1及びX2はそれぞれ独立に硫黄原子又はセレン原子を表し、R1及びR2はそれぞれ独立にC5-C16アルキル基を表す。)
(式中、Xは硫黄原子又はセレン原子を表し、RはC5-C16アルキル基を表す。)
(式中、X1及びX2はそれぞれ独立に硫黄原子又はセレン原子を表し、R1及びR2はそれぞれ独立にC5-C16アルキル基を表す。)
(8)(1)乃至(5)のいずれか一つに記載の複素環式化合物を一種又は複数種含む有機半導体材料、
(9)(1)乃至(5)のいずれか一つに記載の複素環式化合物を含有する半導体デバイス作製用インク、
(10)下記式(1)で表される少なくとも1種の複素環式化合物からなる半導体層を有する電界効果トランジスタ、
(式中、X1及びX2はそれぞれ独立に硫黄原子又はセレン原子を表し、R1及びR2はそれぞれ独立にC5-C16アルキル基を表す。)
(11)電界効果トランジスタが、ボトムコンタクト型である(10)に記載の電界効果トランジスタ、
(12)電界効果トランジスタが、トップコンタクト型である(10)に記載の電界効果トランジスタ、
(13)ゲート電極、ゲート絶縁膜、ソース電極及びドレイン電極を更に含み、前記ゲート絶縁膜が有機絶縁膜である(10)乃至(12)のいずれか一つに記載の電界効果トランジスタ。
(14)下記式(1)で表される少なくとも1種の複素環式化合物からなる半導体層を基板上に形成する工程を含む電界効果トランジスタの製造方法、
(式中、X1及びX2はそれぞれ独立に硫黄原子又はセレン原子を表し、R1及びR2はそれぞれ独立にC5-C16アルキル基を表す。)
(15)半導体層が蒸着法により形成される(14)に記載の電界効果トランジスタの製造方法、
(16)(1)に記載の式(1)で表される複素環式化合物を有機溶剤に溶解させて塗布することによって半導体層を形成する(14)に記載の電界効果トランジスタの製造方法、
(17)半導体層を基板上に形成後、熱処理を行う(14)乃至(16)のいずれか一つに記載の電界効果トランジスタの製造方法、
(18)(1)に記載の式(1)で表される複素環式化合物の微粒子、
(19)平均粒径が5nm以上50μm以下であることを特徴とする、(18)に記載の微粒子、
(20)(18)又は(19)に記載の微粒子の製造方法であって、前記複素環式化合物を有機溶剤に溶解した溶液を、冷却する又は溶剤に混合することによって微粒子を析出させることを特徴とする微粒子の製造方法、
(21)(18)又は(19)に記載の微粒子の製造方法であって、前記複素環式化合物を有機溶剤に溶解した溶液を極性溶剤に混合することによって微粒子を析出させることを特徴とする微粒子の製造方法、
(22)前記複素環式化合物を溶解させる有機溶剤の沸点が100℃以上であることを特徴とする、(20)に記載の微粒子の製造方法、
(23)(18)又は(19)に記載の微粒子を溶剤に分散させたことを特徴とする複素環式化合物の微粒子の分散体、
(24)(23)に記載の分散体の製造方法であって、機械的応力により、(18)又は(19)に記載の微粒子を、溶剤に分散する工程を含むことを特徴とする分散体の製造方法、
(25)(18)又は(19)に記載の微粒子又は(23)に記載の分散体を含む半導体デバイス作製用インク、
(26)(25)に記載の半導体デバイス作製用インクを塗布することによって半導体層を形成する、(14)に記載の電界効果トランジスタの製造方法、
(27)半導体層を基板上に形成後、熱処理を行う(26)に記載の電界効果トランジスタの製造方法、
に関する。
本発明は特定の有機化合物を半導体材料として用いた有機系の電界効果トランジスタに関し、半導体材料として前記式(1)で表される化合物を使用し、半導体層を形成したものである。そこでまず上記式(1)の化合物について説明する。
ここで、直鎖アルキル基の具体例としては、n-ペンチル、n-ヘキシル、n-ヘプチル、オクチル、ノニル、デシル、ウンデシル、ドデシル、トリデシル、テトラデシル、ペンタデシル、ヘキサデシル等が挙げられる。
分岐鎖アルキル基の具体例としては、i-ヘキシル、i-デシル等のC5-C16の飽和分鎖アルキル基が挙げられる。
環状アルキル基の具体例としては、シクロヘキシル、シクロペンチル、アダマンチル、ノルボルニル等のC5-C16のシクロアルキル基が挙げられる。
C5-C16アルキル基としては不飽和より飽和アルキル基が好ましく、置換基を有するものより無置換のものが好ましい。
より好ましくはC6-C14の飽和直鎖アルキル基、更に好ましくはC8-C12の飽和直鎖アルキル基、特に好ましくはオクチル、デシル、ドデシル、最も好ましくはデシルである。
R1及びR2は、それぞれ独立に上記のアルキル基を表し、同一であっても異なっていてもよいが、同一である場合がより好ましい。
図1に、本発明の電界効果トランジスタ(素子)のいくつかの態様例を示す。各例において、1がソース電極、2が半導体層、3がドレイン電極、4が絶縁体層、5がゲート電極、6が基板をそれぞれ表す。尚、各層や電極の配置は、素子の用途により適宜選択できる。A~Dは基板と並行方向に電流が流れるので、横型FETと呼ばれる。Aはボトムコンタクト構造、Bはトップコンタクト構造と呼ばれる。また、Cは有機単結晶のFET作成によく用いられる構造で、半導体上にソース及びドレイン電極、絶縁体層を設け、さらにその上にゲート電極を形成している。Dはトップ&ボトムコンタクト型トランジスタと呼ばれる構造である。Eは縦型の構造をもつFET、すなわち静電誘導トランジスタ(SIT)の模式図である。このSITは、電流の流れが平面状に広がるので一度に大量のキャリアが移動できる。またソース電極とドレイン電極が縦に配されているので電極間距離を小さくできるため応答が高速である。従って、大電流を流す、高速のスイッチングを行うなどの用途に好ましく適用できる。なお図1中のEには、基板を記載していないが、通常の場合、図1E中の1および3で表されるソース及びドレイン電極の外側には基板が設けられる。
基板6は、その上に形成される各層が剥離することなく保持できることが必要である。基板6には、例えば樹脂板やフィルム、紙、ガラス、石英、セラミックなどの絶縁性材料;金属や合金などの導電性基板上にコーティング等により絶縁層を形成した物;樹脂と無機材料など各種組合せからなる材料;等が使用できる。使用できる樹脂フィルムの例としては、例えばポリエチレンテレフタレート、ポリエチレンナフタレート、ポリエーテルスルホン、ポリアミド、ポリイミド、ポリカーボネート、セルローストリアセテート、ポリエーテルイミドなどが挙げられる。樹脂フィルムや紙を用いると、素子に可撓性を持たせることができ、フレキシブルで、軽量となり、実用性が向上する。基板の厚さとしては、通常1μm~10mmであり、好ましくは5μm~5mmである。
ソースおよびドレイン電極は半導体物質と直接に接触し、電子や正孔などの電荷を半導体内に注入する役目がある。この接触抵抗を低下し、電荷の注入を容易にするために半導体材料のHOMO準位やLUMO準位と電極との仕事関数をあわせることが大切である。接触抵抗を下げオーミックな素子とするために、酸化モリブデンや酸化タングステン、及びヘキサフロロベンゼンチオールに代表されるチオール系化合物などの材料で金属電極にドーピングや表面修飾を行うことも重要である。
ソースとドレイン電極間の距離(チャネル長)が素子の特性を決める重要なファクターとなる。該チャネル長は、通常0.1~300μm、好ましくは0.5~100μmである。チャネル長が短ければ取り出せる電流量は増えるが、逆にリーク電流などが発生するため、適正なチャネル長が必要である。ソースとドレイン電極間の幅(チャネル幅)は通常10~10000μm、好ましくは100~5000μmとなる。またこのチャネル幅は、電極の構造をくし型構造とすることなどにより、さらに長いチャネル幅を形成することが可能で、必要な電流量や素子の構造などにより、適切な長さにすればよい。
ソース及びドレイン電極のそれぞれの構造(形)について説明する。ソースとドレイン電極の構造はそれぞれ同じであっても、異なっていてもよい。ボトムコンタクト構造を有するときには、一般的にはリソグラフィー法を用いて各電極を作成し、直方体に形成するのが好ましい。電極の長さは前記のチャネル幅と同じでよい。電極の幅には特に規定は無いが、電気的特性を安定化できる範囲で、素子の面積を小さくするためには短い方が好ましい。電極の幅は、通常0.1~1000μmであり、好ましくは0.5~100μmである。電極の厚さは、通常0.1~1000nmであり、好ましくは1~500nmであり、より好ましくは5~200nmである。各電極1、3、5には配線が連結されているが、配線も電極とほぼ同様の材料により作製される。
電界効果トランジスタの特性を改善したり他の特性を付与するために、必要に応じて他の有機半導体材料や各種添加剤が混合されていてもよい。また半導体層2は複数の層から成ってもよい。
本発明の電界効果トランジスタにおいては、式(1)で表される少なくとも1種の複素環式化合物を半導体材料として用い、実質的に半導体材料としては、式(1)で表される複素環式化合物のみを使用することが好ましく、式(1)で表される複数の複素環式化合物の混合物よりも、単一の複素環式化合物を半導体材料として用いることが特に好ましい。しかし、上記のようにトランジスタの特性を改善する目的等のために、ドーパント等の添加剤については、これを含有することを妨げない。
上記添加剤は、半導体材料の総量に対して、通常0.01~10重量%、好ましくは0.05~5重量%、より好ましくは0.1~3重量%の範囲で添加するのがよい。
また半導体層についても複数の層を形成していてもよいが、単層構造であることがより好ましい。
半導体層2の膜厚は、必要な機能を失わない範囲で、薄いほど好ましい。A、B及びDに示すような横型の電界効果トランジスタにおいては、所定以上の膜厚があれば素子の特性は膜厚に依存しない一方、膜厚が厚くなると漏れ電流が増加してくることが多いためである。必要な機能を示すための半導体層の膜厚は、通常、1nm~10μm、好ましくは5nm~5μm、より好ましくは10nm~3μmである。
保護層の材料としては特に限定されないが、例えば、エポキシ樹脂、ポリメチルメタクリレート等のアクリル樹脂、ポリウレタン、ポリイミド、ポリビニルアルコール、フッ素樹脂、ポリオレフィン等の各種樹脂からなる膜;酸化珪素、酸化アルミニウム、窒化珪素等の無機酸化膜;及び窒化膜等の誘電体からなる膜;等が好ましく用いられ、特に、酸素や水分の透過率や吸水率の小さな樹脂(ポリマー)が好ましい。近年、有機ELディスプレイ用に開発されている保護材料も使用が可能である。保護層の膜厚は、その目的に応じて任意の膜厚を選択できるが、通常100nm~1mmである。
トラップ部位とは、未処理の基板に存在する例えば水酸基のような官能基をさし、このような官能基が存在すると、電子が該官能基に引き寄せられ、この結果としてキャリア移動度が低下する。従って、トラップ部位を低減することもキャリア移動度等の特性改良には有効な場合が多い。
上記のような特性改良のための基板処理としては、例えば、ヘキサメチルジシラザン、シクロヘキセン、オクチルトリクロロシラン、オクタデシルトリクロロシラン等による疎水化処理;塩酸や硫酸、酢酸等による酸処理;水酸化ナトリウム、水酸化カリウム、水酸化カルシウム、アンモニア等によるアルカリ処理;オゾン処理;フッ素化処理;酸素やアルゴン等のプラズマ処理;ラングミュア・ブロジェット膜の形成処理;その他の絶縁体や半導体の薄膜の形成処理;機械的処理;コロナ放電などの電気的処理;又繊維等を利用したラビング処理;等が挙げられる。
しかし、本発明の化合物を用いた電界効果トランジスタは、かかる基板や絶縁体層上への材質による影響が小さいという特徴がある。このことにより、よりコストの掛かる処理や表面状態の調整等が必要なくなり、より幅広い材料が使用可能となり、汎用性やコストの低減につながる。
この製造方法は前記した他の態様の電界効果トランジスタ等にも同様に適用しうるものである。
本発明の電界効果トランジスタは、基板6上に必要な各種の層や電極を設けることで作製される(図2(1)参照)。基板としては上記で説明したものが使用できる。この基板上に前述の表面処理などを行うことも可能である。基板6の厚みは、必要な機能を妨げない範囲で薄い方が好ましい。材料によっても異なるが、通常1μm~10mmであり、好ましくは5μm~5mmである。また、必要により、基板に電極の機能を持たせるようにしてもよい。
基板6上にゲート電極5を形成する(図2(2)参照)。電極材料としては上記で説明したものが用いられる。電極膜を成膜する方法としては、各種の方法を用いることができ、例えば真空蒸着法、スパッタ法、塗布法、熱転写法、印刷法、ゾルゲル法等が採用される。成膜時又は成膜後、所望の形状になるよう必要に応じてパターニングを行うのが好ましい。パターニングの方法としても各種の方法を用い得るが、例えばフォトレジストのパターニングとエッチングを組み合わせたフォトリソグラフィー法等が挙げられる。また、インクジェット印刷、スクリーン印刷、オフセット印刷、凸版印刷等の印刷法、マイクロコンタクトプリンティング法等のソフトリソグラフィーの手法、及びこれら手法を複数組み合わせた手法を利用し、パターニングすることも可能である。ゲート電極5の膜厚は、材料によっても異なるが、通常0.1nm~10μmであり、好ましくは0.5nm~5μmであり、より好ましくは1nm~3μmである。また、ゲート電極と基板を兼ねる場合は上記の膜厚より大きくてもよい。
ゲート電極5上に絶縁体層4を形成する(図2(3)参照)。絶縁体材料としては上記で説明したもの等が用いられる。絶縁体層4を形成するにあたっては各種の方法を用い得る。例えばスピンコーティング、スプレーコーティング、ディップコーティング、キャスト、バーコート、ブレードコーティングなどの塗布法、スクリーン印刷、オフセット印刷、インクジェット等の印刷法、真空蒸着法、分子線エピタキシャル成長法、イオンクラスタービーム法、イオンプレーティング法、スパッタリング法、大気圧プラズマ法、CVD法などのドライプロセス法が挙げられる。その他、ゾルゲル法やアルミニウム上のアルマイト、シリコン上の二酸化シリコンのように金属上に酸化物膜を形成する方法等が採用される。
尚、絶縁体層と半導体層が接する部分においては、両層の界面で半導体を構成する分子、例えば式(1)で表される複素環式化合物の分子を良好に配向させるために、絶縁体層に所定の表面処理を行うこともできる。表面処理の手法は、基板の表面処理と同様のものを用い得る。絶縁体層4の膜厚は、その機能を損なわない範囲で薄い方が好ましい。通常0.1nm~100μmであり、好ましくは0.5nm~50μmであり、より好ましくは5nm~10μmである。
ソース電極1及びドレイン電極3の形成方法等はゲート電極5の場合に準じて形成することができる(図2(4)参照)。
半導体材料としては上記で説明したように、式(1)で表される複素環式化合物の一種または複数種の混合物を総量で通常50重量%以上含む有機材料が使用される。半導体層を成膜するにあたっては、各種の方法を用いることができる。スパッタリング法、CVD法、分子線エピタキシャル成長法、真空蒸着法等の真空プロセスでの形成方法;ディップコート法、ダイコーター法、ロールコーター法、バーコーター法、スピンコート法等の塗布法、インクジェット法、スクリーン印刷法、オフセット印刷法、マイクロコンタクト印刷法などの溶液プロセスでの形成方法;に大別される。
本発明では、前記有機材料をルツボや金属のボート中で真空下、加熱し、蒸発した有機材料を基板(絶縁体層、ソース電極及びドレイン電極の露出部)に付着(蒸着)させる方法、すなわち真空蒸着法が好ましく採用される。この際、真空度は、通常1.0×10-1Pa以下、好ましくは1.0×10-3Pa以下である。また、蒸着時の基板温度によって有機半導体膜、ひいては電界効果トランジスタの特性が変化する場合があるので、注意深く基板温度を選択する必要がある。蒸着時の基板温度は通常、0~200℃であり、好ましくは10~150℃であり、より好ましくは15~120℃であり、さらに好ましくは25~100℃であり、特に好ましくは40~80℃である。
また、蒸着速度は、通常0.001nm/秒~10nm/秒であり、好ましくは0.01nm/秒~1nm/秒である。有機材料からなる有機半導体層の膜厚は、通常1nm~10μm、好ましくは5nm~5μmより好ましくは10nm~3μmである。
尚、半導体層を形成するための有機材料を加熱、蒸発させ基板に付着させる蒸着法に代えて、加速したアルゴン等のイオンを材料ターゲットに衝突させて材料原子を叩きだし基板に付着させるスパッタリング法を用いてもよい。
また半導体層の成膜性の向上や、後述のドーピングなどの為に添加剤や他の半導体材料を混合することも可能である。
これらの添加剤としては、主に高分子化合物等(例えば有機系合成高分子化合物、有機系天然高分子化合物、無機系高分子化合物等がある。)が挙げられ、具体的には合成樹脂、プラスチック、ポリ塩化ビニル、ポリエチレン、フェノール樹脂、アクリル樹脂、アミド樹脂、エステル樹脂、ナイロン、ビニロン、ポリエチレンテレフタレート、合成ゴム、ポリイソプレン、アクリルゴム、アクリロニトリルゴム、ウレタンゴムなどが挙げられる。
インクを使用する際には式(1)の複素環式化合物等を含む半導体材料などを上記の溶媒に溶解させ、必要であれば加熱溶解処理を行う。さらに得られた溶液をフィルターなどを用いてろ過し、不純物などの固形分を除去することにより、半導体デバイス作製用インクが得られる。このようなインクを用いると、半導体層の成膜性の向上が見られ、半導体層を作製する上で好ましい。
本発明の化合物を溶解させる溶剤としては化合物が溶解することが出来れば特に限定されるものではない。溶剤としては有機溶剤が好ましく、具体的にはクロロホルム、塩化メチレン、ジクロロエタンなどのハロゲノ炭化水素系溶媒;メタノール、エタノール、イソプロピルアルコール、ブタノールなどのアルコール系溶媒;オクタフルオロペンタノール、ペンタフルオロプロパノールなどのフッ化アルコール系溶媒;酢酸エチル、酢酸ブチル、安息香酸エチル、炭酸ジエチルなどのエステル系溶媒;トルエン、ヘキシルベンゼン、キシレン、メシチレン、クロロベンゼン、ブロモベンゼン、ジクロロベンゼン、クロロトルエン、メトキシベンゼン、クロロナフタレン、メチルナフタレン、テトラヒドロナフタレンなどの芳香族炭化水素系溶媒;アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロペンタノン、シクロヘキサノンなどのケトン系溶媒;ジメチルホルムアミド、ジメチルアセトアミド、N-メチルピロリドンなどのアミド系溶媒;テトラヒドロフラン、ジイソブチルエーテル、ジフェニルエーテル、などのエーテル系溶媒;オクタン、デカン、デカリン、シクロヘキサン、ジクロロエタン、クロロヘキサンなどの炭化水素系溶媒などを用いることが出来る。これらは単独でも、混合して使用することも出来る。
この他、また顔料微粒子を微細化するようにソルベントミリング法やソルトミリング法、アシッドペースティング法、アシッドスラリー法などの手法も適宜利用できる。
更に、塗布方法に類似した方法として水面上に上記のインクを滴下することにより作製した半導体層の単分子膜を基板に移し積層するラングミュアプロジェクト法、液晶や融液状態の材料を2枚の基板で挟んだり毛管現象で基板間に導入する方法等も採用できる。
この方法により作製される有機半導体層の膜厚は、機能を損なわない範囲で、薄い方が好ましい。膜厚が大きくなると漏れ電流が大きくなる懸念がある。有機半導体層の膜厚は、通常1nm~10μm、好ましくは5nm~5μm、より好ましくは10nm~3μmである。
またその他の半導体層の後処理方法として、酸素や水素等の酸化性あるいは還元性の気体や、酸化性あるいは還元性の液体などと処理することにより、酸化あるいは還元による特性変化を誘起することもできる。これは例えば膜中のキャリア密度の増加あるいは減少の目的で利用することが多い。
有機半導体層上に保護層7を形成すると、外気の影響を最小限にでき、また、有機電界効果トランジスタの電気的特性を安定化できるという利点がある(図2(6)参照)。保護層材料としては前記のものが使用される。
保護層7の膜厚は、その目的に応じて任意の膜厚を採用できるが、通常100nm~1mmである。
保護層を成膜するにあたっては各種の方法を採用し得るが、保護層が樹脂からなる場合は、例えば、樹脂溶液を塗布後、乾燥させて樹脂膜とする方法;樹脂モノマーを塗布あるいは蒸着したのち重合する方法;などが採用できる。さらに成膜後に架橋処理を行ってもよい。保護層が無機物からなる場合は、例えば、スパッタリング法、蒸着法等の真空プロセスでの形成方法や、ゾルゲル法等の溶液プロセスでの形成方法も用いることができる。
本発明の電界効果トランジスタにおいては有機半導体層上の他、各層の間にも必要に応じて保護層を設けることができる。それらの層は有機電界効果トランジスタの電気的特性の安定化に役立つ場合がある。
また反応温度は、特に断りのない限り反応系内の内温を記載した。
合成例にて得られた各種の化合物は、必要に応じてMS(質量分析スペクトル)、極大吸収(λmax)、及びmp(融点)の各種の測定を行うことによりその構造式を決定した。測定機器は以下の通りである。
MSスペクトル:Shimadzu QP-5050A
吸収スペクトル:Shimadzu UV-3150
Methyl 6-octhynyl-2-naphtoate の合成(100)
50 mL三口フラスコに還流管と滴下漏斗をつけ窒素置換し、DMF (8 ml) を加え10分間バブリングした。三口フラスコにmethyl 6-bromo-2-naphthoate (1 g, 3.8 mmol) と Pd(pph3)4 (218 mg, 0.12 mmol), NEt3 (1.58 ml, 11.3 mmol) 及び CuI (36 mg, 0.19 mmol) 入れて攪拌した。滴下漏斗にtoluene (8 ml) と1-octyne (0. 56ml, 3.8 mmol) を入れ10分間Arガスでバブリングしてからゆっくり滴下した。室温で27.5時間攪拌しても原料がなくならなかったので、1-octyne (0.28 ml,1.9 mmol) をもっと加えた。4時間後水と2N HClを加えpH7になるようにして反応を止めた。塩化メチレンで抽出し有機層を無水マグネシウムで乾燥、ろ過後ロータリーエバポレーターで溶媒を留去した。得られた反応混合物を塩化メチレン溶媒を移動相とするシリカゲルカラムクロマトグラフィー (φ=3 cm × 16 cm) 分離精製することでオレンジ色固体として6-オクチルニルナフタレンカルボン酸メチル (1.02 g, 3.46 mmol, 92%) を得た。
測定サンプルは塩化メチレンの再結晶で得たものを用いた。
Methyl 6-octhynyl-2-naphtoate:orange ; 1H NMR (270 MHz, CDCl3) δ0.92 (t, 3H, J=6.48 Hz), δ1.34~1.65 (m, 8H), δ2.46 (t, 2H, J =6.8 Hz) δ3.98(s,3H, CO2CH3)δ7.51 (dd, 1H, J =8.19, 1.32 Hz, ArH) δ7.80(d, 1H, J =8.75, ArH) δ7.86 (d, 1H, J =8.47 Hz, ArH) δ7.92 (s, 1H, ArH) δ8.05 (dd, 1H, J = 8.58, 1.49 Hz) EI-MS, m/z=294(M+)
Methyl 6-octhyl-2-naphtoateの合成(101)
50ml 三口フラスコにMethyl 6-octhynyl-2-naphtoate (100) (118 mg, 0.4 mmol) をいれArガスで置換した。10% Pd/C (107 mg, 0.52 mmol) と toluene (25 ml) を加え溶かした。H2ガスをアスピレーターで3回置換し室温で2 時間攪拌した。反応終了後ヘキサンでセライト濾過しロータリーエバポレーターで溶媒を留去することで白色固体として6-オクチルナフタレンカルボン酸メチル (107 mg, 0.36 mmol, 90%) を得た。
Methyl 6-octhyl-2-naphtoate:white; 1H NMR (270 MHz, CDCl3) δ0.87 (t, 3H, J=6.90 Hz), δ1.27~1.71 (m, 8H), δ2.79 (t, 2H, J =7.75 Hz) δ3.98(s,3H, CO2CH3) δ7.40 (dd, 1H, J =7.99, 1.66 Hz, ArH) δ7.65 (s, 1H, ArH) δ7.81(d, 1H, J =8.2, ArH) δ7.87 (d, 1H, J =8.84 Hz, ArH) δ8.03 (dd, 1H, J = 8.60, 1.75 Hz) EI-MS, m/z=298(M+)
2-hydroxymethyl-6-octylnaphthaleneの合成(102)
50 ml 三口フラスコに無水THF (20 ml) と LAH (38mg, 1 mmol) を入れた。フラスコを氷水中で冷却しながら6-オクチルナフタレンカルボン酸メチル (101) (298 mg, 1 mmol)の無水THF (5 ml) 溶液をゆっくり滴下した。室温で1時間攪拌し、氷 (30~40 ml) が入ったビーカーに反応物を注いで2 N HClを加えた。有機層と水層に完全分離してから塩化メチレンで抽出し有機層を無水マグネシウムで乾燥した。ろ過後ロータリーエバポレーターで溶媒を留去することで白色として2-hydroxymethyl-6-octylnaphthalene (270 mg , 1 mmol, 100 %) を得た。
2-hydroxymethyl-6-octylnaphthalene:white ; 1H NMR (270 MHz, CDCl3) δ0.87 (t, 3H, J = 6.53 Hz), δ1.26~1.72 (m, 8H), δ2.76 (t, 2H, J = 7.71 Hz) δ4.85 (s, 2H, CH2OH)δ7.35 (dd, 1H, J = 8.53 , 1.20 Hz, ArH) δ7.46 (dd, 1H, J = 8.49 , 1.67 Hz, ArH) δ7.61 (s, 1H, ArH) δ7.77 (3H, ArH) EI-MS, m/z=270(M+)
6-octyl-2-naphthaldehydeの合成(103)
100 ml 三口フラスコに2-hydroxymethyl-6-octylnaphthalene (102) (858 mg, 3.18 mmol)をいれCCl4(51 ml) 溶液に溶かした。MnO2 (5.46 mg, 64 mmol) を加え20時間還流した。室温まで冷却した後に不溶性固体をろ過により除去した。濾液をロータリーエバポレーターで溶媒を留去した。得られた反応混合物を塩化メチレン溶媒を移動相とするシリカゲルカラムクロマトグラフィー (φ= 3 cm × 5 cm) 分離精製することで黄色オイルとして6-オクチル-2-ナフトアルデヒド (820 mg, 3.06 mmol, 94%) を得た。
6-octyl-2-naphthaldehyde: yellow oil ; 1H NMR (270 MHz, CDCl3) δ0.88 (t, 3H, J = 6.61 Hz), δ1.27~1.74 (m, 12H), δ2.81 (t, 2H, J =7.64 Hz) δ7.45 (dd, 1H, J =8.08, 1.66 Hz, ArH) δ7.68 (s, 1H, ArH) δ7.87 (d, 1H, J =8.52 Hz, ArH) δ7.93 (dd, 2H, J =8.39, 1.19 Hz, ArH) δ8.31 (s, 1H, ArH) δ10.14 (s, 1H, CHO) EI-MS, m/z=268(M+)
3-Methylthio-6-octyl-2-naphthaldehydeの合成(104)
滴下漏斗を取り付けた100 ml の三口フラスコを加熱乾燥後窒素雰囲気にし、N,N,N'-トリメチルジアミン (0.93ml, 7.3 mmol) と無水THF (32 ml) を加え-30℃に冷却した。これにブチルリチウムのヘキサン溶液 (1.65 M, 4.4 ml, 7.3 mmol) 加え15分間攪拌した。次に-30℃で6-オクチル-2-ナフトアルデヒド (103) (1.2 g, 4.5 mmol) の無水THF (30 ml) 溶液を5分かけて滴下し30分間攪拌した。更に-30℃でブチルリチウムのヘキサン溶液 (1.65 M, 8.1 ml, 22 mmol) を加え25時間攪拌した。-30℃でジメチルジスルフィド (1.35 ml, 15 mmol) を加えた後室温で24時間攪拌し、2 Nの塩酸加え24時間攪拌した。反応溶液を塩化メチレンで抽出し有機層を無水マグネシウムで乾燥、ろ過後ロータリーエバポレーターで溶媒を留去した。得られた反応混合物をヘキサン:酢酸エチル 9:1の混合溶媒を移動相とするシリカゲルカラムクロマトグラフィーで精製し、黄色固体として3-メチルチオ-6-オクチル-2-ナフトアルデヒド (815 mg, 2.6 mmol, 58%) を得た。
3-Methylthio-6-octyl-2-naphthaldehyde : yellow ; 1H NMR (400 MHz, CDCl3) δ0.88 (t, 3H, J =6.87 Hz), δ1.27~1.71 (m, 12H), δ2.59 (s, 3H, SMe) δ2.78 (t, 2H, J =7.68 Hz) δ7.35 (dd, 1H, J =8.46, 1.77 Hz, ArH) δ7.55 (s, 1H, ArH) δ7.57 (s, 1H, ArH) δ7.84 (d, 1H, J =8.35 Hz, ArH) δ8.29 (s, 1H) EI-MS, m/z=314(M+)
1,2-Di(3-methylthio-6-octyl-2-naphthyl)ethyleneの合成(105)
滴下漏斗と還流管を取り付けた500 ml の三口フラスコを窒素置換し、THF (300 ml) 入れた。フラスコを氷浴で冷却しながらTiCl4 (5.6 ml, 51 mmol) を加えた。更にZn (3.3 g, 51 mmol) を入れ2時間還流した。その後3-メチルチオ-6-オクチル-2-ナフトアルデヒド (104) (5.3 mg, 17 mmol) の無水THF (100 ml) 溶液をゆっくり滴下、更に滴下漏斗に無水THF (10 ml) を加えた後、28.5 時間還流した。室温まで冷却した後に飽和炭酸ナトリウム水溶液とクロロホルムを加え反応系の色が完全に変化してから、不溶性固体をセライトろ過により除去した。得られた濾液をクロロホルムで抽出し有機層を無水マグネシウムで乾燥、ろ過後ロータリーエバポレーターで溶媒を留去した。得られた黄色固体をCH2Cl2溶媒を移動相とするシリカゲルカラムクロマトグラフィーで原点成分を取り除くことで黄色固体として1,2-ジ (3-メチルチオ-6-オクチル-2-ナフチル) エチレン (105) (4.2 g, 7.0 mmol, 83%) を得た。
1,2-Di(3-methylthio-6-octyl-2-naphthyl)ethylene: yellow solid ; 1H NMR (400 MHz, CDCl3) δ0.88 (t, 6H, J=6.86 Hz), δ1.25~1.72 (m, 24H) δ2.59 (s, 6H, SMe) δ2.76 (t, 4H, J=7.57 Hz) δ7.28 (dd, 2H, J=8.3, 1.66 Hz, ArH) δ7.52 (s, 2H, ArH) δ7.59 (s, 2H, ArH) δ7.64 (s, 2H, ArH) δ7.76 (d, 2H, J=8.33 Hz, ArH) δ8.06 (s, 2H, ArH) EI-MS, m/z=596(M+)
6,6'-Dioctyldinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophenの合成(10)
50 ml ナス型フラスコに 1,2-ジ (3-メチルチオ-6-オクチル-2-ナフチル) エチレン (105) (314 mg, 0.53 mmol) とヨウ素 (4.0 g, 16 mmol) , CHCl3 (22 ml) を加え還流管を取り付け24時間半還流した。室温まで冷却した後飽和亜硫水素ナトリウム水溶液を加え色が完全に変わったらCHCl3で抽出し有機層を無水マグネシウムで乾燥、ろ過後ロータリーエバポレーターで溶媒を留去することとした。その後、CHCl3で再結晶することによって黄色固体 (92 mg, 0.16 mmol, 31 %) を得た。
クロロホルムで再結晶することにより黄色固体 (10) (7 mg,0.012 mmol, 15 % ) を得た。
6,6'-Dimethyldinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophen : yellow solid ; 1H NMR (270 MHz, CD2Cl2) δ0.88 (t, 6H, J= 7.67 Hz), δ1.29~1.66 (m, 24H)δ2.85 (t, 4H) δ7.43 (dd, 2H, J=8.9, 1.39 Hz, ArH) δ7.74 (s, 2H, ArH) δ8.0 (d, 2H, J=8.17 Hz, ArH) δ8.36 (s, 2H, ArH) δ8.38 (s, 2H, ArH) EI-MS, m/z=368(M+) EI-MS, m/z=564(M+)
熱分析(吸熱ピーク):122、240、319、336℃(TG-DTA使用、窒素)
これまでと同様な方法で上記の化合物No.(6)、(12)、(14)および(106)を合成した。
黄色固体 (収率34% )
1H NMR (270 MHz, CDCl3) δ0.90 (t, 6H, J =6.0 Hz), δ1.24~1.75 (m, 16H), δ2.83 (t, 4H, J =7.6 Hz) δ7.39 (dd, 2H, J=9.7, 1.6 Hz, ArH) δ7.70 (s, 2H, ArH) δ7.6 (d, 2H, J=8.8Hz, ArH) δ8.32 (s, 2H, ArH) δ8.34 (s, 2H, ArH) EI-MS, m/z=508(M+)
熱分析(吸熱ピーク):134、252、343℃(TG-DTA使用、窒素)
黄色固体 (収率43% )
1H NMR (400 MHz, CDCl3) δ0.90 (t, 6H, J =8.4 Hz), δ1.21~1.74 (m, 32H), δ2.79 (t, 4H, J =7.9 Hz) δ7.53 (dd, 2H,, ArH) δ7.38 (s, 2H, ArH) δ7.95 (d, 2H, J=8.7Hz, ArH) δ8.32 (s, 2H, ArH) δ8.34 (s, 2H, ArH) EI-MS, m/z=620(M+)
熱分析(吸熱ピーク):117、219、298℃(TG-DTA使用、窒素)
熱分析(吸熱ピーク):121、210、280、287℃(TG-DTA使用、窒素)
熱分析(吸熱ピーク):293、375℃(TG-DTA使用、窒素)
なお、化合物No.106は実施例1以降で比較化合物(ref.2)に対応する。
また、合成例7までに示した同様な方法で、化合物No.9を合成した。
黄色固体(収率32%) EI-MS, m/z=536(M+)
熱分析(吸収ピーク):275、324、338℃(TG-DTA使用、窒素)
ヘキサメチレンジシラザン処理を行った300nmのSiO2熱酸化膜付きnドープシリコンウェハー(面抵抗0.02Ω・cm以下)を真空蒸着装置内に設置し、装置内の真空度が5.0×10-3Pa以下になるまで排気した。抵抗加熱蒸着法によって、この電極に基板温度約60℃の条件下、化合物No.10を50nmの厚さに蒸着し、半導体層(2)を形成した。次いでこの基板に電極作成用シャドウマスクを取り付け、真空蒸着装置内に設置し、装置内の真空度が1.0×10-4Pa以下になるまで排気し、抵抗加熱蒸着法によって、金の電極、すなわちソース電極(1)及びドレイン電極(3)、を40nmの厚さに蒸着し、TC(トップコンタクト)型である本発明の電界効果トランジスタを得た。
得られた電界効果トランジスタをプローバー内に設置し半導体パラメーターアナライザー4155C(Agilent社製)を用いて半導体特性を測定した。半導体特性はゲート電圧を10Vから-100Vまで20Vステップで走査し、またドレイン電圧を10Vから-100Vまで走査し、ドレイン電流-ドレイン電圧を測定した。その結果、電流飽和が観測され、得られた電圧電流曲線より、本素子はp型半導体を示し、キャリア移動度は3.1cm2/Vsであり、閾値電圧は-10Vであった。
実施例2で用いた化合物No.10の代わりに様々な化合物を用いて、実施例2と同様の操作により、TC型の電界効果トランジスタを得た。結果を表3に示す。
実施例2と同様に真空プロセスを用いて、各種電界効果トランジスタを得た。その特性は通常の有機物を半導体として蒸着法を用いた電界効果トランジスタとしては非常に高い。工業的には実現性の低い、単結晶を用いた電界効果トランジスタの移動度に匹敵するレベルであり、工業的な適性のある真空蒸着法で非常に高い移動度が得られた。本願の電界効果トランジスタは高性能であるため使用できるアプリケーションの幅が拡がるなど工業的な価値が非常に高くなった。
200nmのSiO2熱酸化膜付きnドープシリコンウェーハをそれぞれOTS-8(オクチルトリクロロシラン)、OTS-18(オクタデシルオクタデシルシラン)、HMDS(ヘキサメチレンジシラザン)にて表面処理を実施した。この基板及び基板処理をしていないBare基板に実施例2と同様に蒸着を行い、TC型の電界効果トランジスタを作成した。同様にキャリア移動度を測定した結果を表に示す。
実験の結果より明確なようにアルキル基で置換されていない化合物は表面処理を行っていない基板を用いると移動度が低いが表面処理を行うことで移動度が向上する。(0.2からOTS系であれば10倍以上)それに対して本発明の長鎖アルキル基で置換された化合物は表面処理を行っていない基板上でも高い移動度を示す。特にNo.12の化合物はOTS-18においては有機トランジスタの蒸着方法で製膜された電界効果トランジスタとして最高の移動度5.4を有し、さらに基板の表面処理を行っていない素子においても移動度3.8を示し、非常に高い移動度を有している。このことは基板(絶縁膜)の状況に寄らず、非常に高い半導体特性を示すことが可能であり、製造時におけるコストの低減や様々な絶縁膜に広い対応が可能であることを指し示し、工業的に有利であることが明確である。
300nmのSiO2熱酸化膜付きnドープシリコンウェハー(面抵抗0.02Ω・cm以下)上にレジスト材料を塗布、露光パターニングし、ここにクロムを1nm、さらに金を40nm蒸着した。次いでレジストを剥離して、ソース電極(1)及びドレイン電極(3)を形成させた。この電極を設けたシリコンウェハーを真空蒸着装置内に設置し、装置内の真空度が5.0×10-3Pa以下になるまで排気した。抵抗加熱蒸着法によって、この電極に基板温度約60℃の条件下、化合物No.10を50nmの厚さに蒸着し、半導体層(2)を形成してBC(ボトムコンタクト)型である本発明の電界効果トランジスタを得た。本実施例における電界効果トランジスタにおいては、熱酸化膜付きnドープシリコンウェハーにおける熱酸化膜が絶縁層(4)の機能を有し、nドープシリコンウェハーが基板(6)及びゲート層(5)の機能を兼ね備えている(図3を参照)。実施例2と同様に半導体特性を測定した結果、電流飽和が観測され、得られた電圧電流曲線より、本素子はp型半導体を示し、キャリア移動度は0.68cm2/Vsであった。
実施例5で得られたBC型の電界効果トランジスタを大気中150℃で1時間、加熱処理を実施した後、同様に半導体特性を測定した結果、電流飽和が観測され、得られた電圧電流曲線より、本素子はp型半導体を示し、キャリア移動度は1.00cm2/Vsであった。
実施例5で用いた化合物No.10の代わりに様々な化合物を用いて、実施例5及び6と同様の操作により、BC型の電界効果トランジスタを得た。結果を表5に示す。
本願の電界効果トランジスタは通常特性が悪くなりがちなボトムコンタクト型構造においても実用的な高い移動度を示すことが明らかになった。更に耐熱性が高く、しかも加熱により移動度の向上が見られる。一方でアルキル鎖がC4の化合物ref.2やアルキル基が無い化合物(ref.1)の場合はアニール後の移動度が低下してしまった。各種デバイスの作成時には熱がかかるプロセスが存在するので、化合物はこの熱に耐える必要があるが、この結果より長鎖アルキル基を有する化合物はデバイスを作成するときに受ける熱耐性に優れていることが分った。
300nmのSiO2熱酸化膜付きnドープシリコンウェハー(面抵抗0.02Ω・cm以下)上にレジスト材料を塗布、露光パターニングし、ここにクロムを1nm、さらに金を40nm蒸着した。次いでレジストを剥離して、ソース電極(1)及びドレイン電極(3)を形成させた。化合物No.14を1,2-ジクロロベンゼンに0.5%になるように溶液を調製し、100℃に加熱し、半導体デバイス作製用インクを得た。先の電極を設けたシリコンウェハーを100℃に加熱し、その電極間に100℃の半導体デバイス作製用インクをキャストコートすることにより半導体層(2)を形成してBC(ボトムコンタクト)型である本発明の電界効果トランジスタを得た。本実施例における電界効果トランジスタにおいては、熱酸化膜付きnドープシリコンウェハーにおける熱酸化膜が絶縁層(4)の機能を有し、nドープシリコンウェハーが基板(6)及びゲート層(5)の機能を兼ね備えている(図3を参照)。実施例1と同様に半導体特性を測定した結果、電流飽和が観測され、得られた電圧電流曲線より、本素子はp型半導体を示し、キャリア移動度は0.04cm2/Vsであり、このように、半導体性能を発揮する事を確認した。しかしながら、比較化合物ref.1及びref.2を用いた場合は、いずれも溶剤溶解性が極めて低いため、製膜できず、塗布法による半導体層を得ることはできなかった。
以上のように溶液プロセスを用いて、電界効果トランジスタが得られた。このことはよりコストの安く出来る可能性のある印刷方法により有機半導体デバイスが得られることが明らかになった。
ヘキサメチレンジシラザン(HMDS)処理を行った200nmのSiO2熱酸化膜付きnドープシリコンウェハーの有機半導体薄膜を形成するチャネル領域にマスクを用いてUV照射を行いHMDSを除去し親液領域を形成した。その親液領域に化合物No.10の1-クロロナフタレン溶液(200℃)をドロップキャストにて塗布し、60℃で乾燥し半導体薄膜(2)を形成した。次いでこの基板に電極作成用シャドウマスクを取り付け、真空蒸着装置内に設置し、装置内の真空度が1.0×10-4Pa以下になるまで排気し、抵抗加熱蒸着法によって、金の電極、すなわちソース電極(1)及びドレイン電極(3)、を50nmの厚さに蒸着し、TC(トップコンタクト)型である本発明の電界効果トランジスタを得た。実施例1と同様に半導体特性を測定した結果、電流飽和が観測され、得られた電圧電流曲線より、本素子はp型半導体を示し、キャリア移動度は0.17cm2/Vsであり、このように、半導体性能を発揮する事を確認した。しかしながら、比較化合物ref.1及びref.2を用いた場合は、いずれも溶剤溶解性が極めて低いため、製膜できず、塗布法による半導体層を得ることはできなかった。
このように自己形成技術を用いた塗布型の有機電界効果トランジスタが得られ、実用的なキャリア移動度を示す素子を作製することが出来た。これにより様々なデバイス作成プロセスに対して適応性を有し、使用できるプロセスやアプリケーションの幅が拡がるなど工業的な価値が高いことが明らかとなった。
化合物No.12(R1及びR2がC10H21のもの)の黄色固体(93.1mg)を大気中でトルエン95mlに加熱して溶解し、無色の溶液を得た。この溶液を、強攪拌した2-プロパノール(600ml、室温)上に滴下することで本発明の微粒子を得た。その後、一度濃縮し、2-プロパノールを30ml加えたのち、さらにエバポレーターで濃縮し、化合物No.12の1.02%分散体(2-プロパノール溶媒)を得た。この溶液をシリコン基板上にスピンコートし、光学顕微鏡で観察したところ平均粒径2~3μmの板状粒子であることがわかった。この分散液は、2週間たっても相分離などを起こさなかった。
化合物No.12(R1及びR2がC10H21のもの)の黄色固体(93.1mg)を大気中でトルエン95mlに加熱して溶解し、無色の溶液を得た。この溶液を、2-プロパノール(300ml)中に注射器で注入して、微粒子を得た。その後、一度濃縮し、2-プロパノールを30ml加えたのち、さらにエバポレーターで濃縮し、化合物No.12の2.0%分散体(2-プロパノール溶媒)を得た。この溶液をシリコン基板上にスピンコートし、電子顕微鏡で観察したところ平均粒径200nmの板状粒子であることがわかった。
実施例11で用意した化合物No.12の2.0%分散体(2-プロパノール溶媒)11.2mlにテトラリン(11.4ml)加え、エバポレーターで濃縮し、化合物No.12の2.0%分散体(テトラリン溶媒、沸点207℃)を得た。
実施例12で用意した化合物No.12の2.0%分散体(テトラリン溶媒)3mlと2-プロパノール(3ml)および、ビーズ状のジルコニア(30μm、4.8g)を混合し、攪拌装置(7000rpm、30分間、氷冷)で攪拌し、化合物No.12の1.0%分散体(テトラリンと2-プロパノール1:1溶媒)を得た。
化合物No.12(R1及びR2がC10H21のもの)の黄色固体(93.1mg)とポリスチレン(Aldrich製、MW=35万、93.1mg)をトルエン95mlに溶解し、実施例10と同様の操作を行い、化合物No.12の1.0%分散体(PS1.0%入り、2-プロパノール溶媒)を得た。
BC(ボトムコンタクト)型である本発明の電界効果トランジスタを実施例5では半導体層(2)を蒸着により形成しているが、ここでは実施例10で示した化合物No.12の1.02%分散体である半導体デバイス作製用インク(2-プロパノール溶媒)をスピンコートで製膜して、半導体層(2)を形成し、実施例2と同様に半導体特性を測定した結果、電流飽和が観測され、得られた電圧電流曲線より、本素子はp型半導体を示し、キャリア移動度は、3.93×10-2cm2/Vs、ON/OFF比は1.10×106で閾値電圧は-16.7Vであった。
実施例15と同様に、半導体層(2)を実施例12で得られた、化合物No.12の2.0%分散体である半導体デバイス作製用インク(テトラリン溶媒、沸点207℃)をスピンコートにより形成し、形成したスピンコート膜を140℃で5分間加熱処理してみたところ、シリコン基板上で、化合物No.12が基板上で溶解し透明な薄膜を形成した。実施例2と同様に半導体特性を測定した結果、電流飽和が観測され、得られた電圧電流曲線より、本素子はp型半導体を示し、キャリア移動度は、1.84×10-2cm2/Vsであった。
洗浄を行ったITO付きガラス基板(15Ω/□)の上にポリイミド樹脂溶液(CT4112:京セラケミカル製)をスピンコート法(4000rpm×10min)で製膜し、窒素下で徐々に温度を上げ、200℃で1時間加熱し、ITO基板上に有機絶縁膜を形成した。この基板を真空蒸着装置内に設置し、装置内の真空度が5.0×10-3Pa以下になるまで排気した。この有機絶縁膜付きのガラス基板に温度約60℃の条件下、化合物No.12を50nmの厚さに抵抗加熱蒸着法によって蒸着し、半導体層を形成した。次いでこの基板に電極作成用シャドウマスクを取り付け、真空蒸着装置内に設置し、装置内の真空度が1.0×10-4Pa以下になるまで排気した。そして、抵抗加熱蒸着法によって、金の電極、すなわちソース電極(1)及びドレイン電極(3)、を40nmの厚さに蒸着し、TC(トップコンタクト)型である本発明の電界効果トランジスタを得た。
なお、本実施例における電界効果トランジスタにおいては、ポリイミド樹脂が絶縁層(4)の機能を有し、ガラス基板(6)上のITO膜がゲート電極(5)の機能を備えている(図3参照)。
得られた電界効果トランジスタをプローバー内に設置し半導体パラメーターアナライザー4155C(Agilent社製)を用いて半導体特性を測定した。半導体特性はドレイン電圧を-60Vとし、ゲート電圧を40Vから-80Vまで走査し半導体特性を測定した。その結果得られた電圧電流曲線より、本素子はキャリア移動度3.9cm2/Vsであり、閾値電圧は-8Vであった。
この結果、本願の化合物を用いた有機絶縁膜を用いた電界効果トランジスタは非常に良好な特性を示し、フレキシブル基板などへの応用の可能性が確認できた。
1 ソース電極
2 半導体層
3 ドレイン電極
4 絶縁体層
5 ゲート電極
6 基板
7 保護層
Claims (27)
- 式(1)においてR1及びR2がそれぞれ独立に直鎖のC5-C16アルキル基である請求項1に記載の複素環式化合物。
- 式(1)においてR1及びR2がそれぞれ独立に分岐鎖のC5-C16アルキル基である請求項1に記載の複素環式化合物。
- 式(1)においてR1及びR2がそれぞれ独立にC6-C14アルキル基である請求項1乃至3のいずれか一項に記載の複素環式化合物。
- 式(1)においてX1及びX2がいずれも硫黄原子である請求項1乃至4のいずれか一項に記載の複素環式化合物。
- 請求項1乃至5のいずれか一項に記載の複素環式化合物を一種又は複数種含む有機半導体材料。
- 請求項1乃至5のいずれか一項に記載の複素環式化合物を含有する半導体デバイス作製用インク。
- 電界効果トランジスタが、ボトムコンタクト型である請求項10に記載の電界効果トランジスタ。
- 電界効果トランジスタが、トップコンタクト型である請求項10に記載の電界効果トランジスタ。
- ゲート電極、ゲート絶縁膜、ソース電極及びドレイン電極を更に含み、前記ゲート絶縁膜が有機絶縁膜である請求項10乃至12のいずれか一項に記載の電界効果トランジスタ。
- 半導体層が蒸着法により形成される請求項14に記載の電界効果トランジスタの製造方法。
- 請求項1に記載の式(1)で表される複素環式化合物を有機溶剤に溶解させて塗布することによって半導体層を形成する請求項14に記載の電界効果トランジスタの製造方法。
- 半導体層を基板上に形成後、熱処理を行う請求項14乃至16のいずれか一項に記載の電界効果トランジスタの製造方法。
- 請求項1に記載の式(1)で表される複素環式化合物の微粒子。
- 平均粒径が5nm以上50μm以下であることを特徴とする、請求項18に記載の微粒子。
- 請求項18又は19に記載の微粒子の製造方法であって、前記複素環式化合物を有機溶剤に溶解した溶液を、冷却する又は溶剤に混合することによって微粒子を析出させることを特徴とする微粒子の製造方法。
- 請求項18又は19に記載の微粒子の製造方法であって、前記複素環式化合物を有機溶剤に溶解した溶液を極性溶剤に混合することによって微粒子を析出させることを特徴とする微粒子の製造方法。
- 前記複素環式化合物を溶解させる有機溶剤の沸点が100℃以上であることを特徴とする、請求項20に記載の微粒子の製造方法。
- 請求項18又は19に記載の微粒子を溶剤に分散させたことを特徴とする複素環式化合物の微粒子の分散体。
- 請求項23に記載の分散体の製造方法であって、機械的応力により、請求項18又は19に記載の微粒子を、溶剤に分散する工程を含むことを特徴とする分散体の製造方法。
- 請求項18又は19に記載の微粒子又は請求項23に記載の分散体を含む半導体デバイス作製用インク。
- 請求項25に記載の半導体デバイス作製用インクを塗布することによって半導体層を形成する、請求項14に記載の電界効果トランジスタの製造方法。
- 半導体層を基板上に形成後、熱処理を行う請求項26に記載の電界効果トランジスタの製造方法。
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EP2402348A4 (en) | 2012-06-20 |
JPWO2010098372A1 (ja) | 2012-09-06 |
KR101716196B1 (ko) | 2017-03-14 |
US9796727B2 (en) | 2017-10-24 |
EP2402348A1 (en) | 2012-01-04 |
US20110303910A1 (en) | 2011-12-15 |
KR20110133025A (ko) | 2011-12-09 |
CN102333780B (zh) | 2014-10-29 |
CN102333780A (zh) | 2012-01-25 |
JP5477978B2 (ja) | 2014-04-23 |
EP2402348B1 (en) | 2017-04-12 |
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