WO2010074075A1 - レジスト下層膜形成組成物用添加剤及びそれを含むレジスト下層膜形成用組成物 - Google Patents

レジスト下層膜形成組成物用添加剤及びそれを含むレジスト下層膜形成用組成物 Download PDF

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WO2010074075A1
WO2010074075A1 PCT/JP2009/071320 JP2009071320W WO2010074075A1 WO 2010074075 A1 WO2010074075 A1 WO 2010074075A1 JP 2009071320 W JP2009071320 W JP 2009071320W WO 2010074075 A1 WO2010074075 A1 WO 2010074075A1
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underlayer film
resist underlayer
resist
film forming
forming composition
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PCT/JP2009/071320
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English (en)
French (fr)
Japanese (ja)
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坂本　力丸
佳臣 広井
邦慶 何
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日産化学工業株式会社
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Priority to JP2010544080A priority Critical patent/JP5477593B2/ja
Priority to KR1020117016774A priority patent/KR101530197B1/ko
Publication of WO2010074075A1 publication Critical patent/WO2010074075A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
    • C09D125/02—Homopolymers or copolymers of hydrocarbons
    • C09D125/04—Homopolymers or copolymers of styrene
    • C09D125/08—Copolymers of styrene
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene

Definitions

  • the present invention relates to an additive added to the resist underlayer film forming composition.
  • the present invention relates to a modifier that allows a surface layer of a resist underlayer film to be formed to form a pattern having a desired shape on the resist underlayer film.
  • the present invention relates to a resist underlayer film forming composition containing the additive (modifier).
  • a composition for forming an antireflection film used in a lithography process is known (see, for example, Patent Document 1 and Patent Document 2 below).
  • a photoresist layer is formed on the antireflection film formed using this composition, and then a photoresist pattern is formed by performing at least exposure and development processing.
  • Patent Document 1 describes a polymer compound having a repeating unit structure containing a halogen atom, particularly a bromine atom, an iodine atom, or a combination thereof as a component contained in the composition.
  • concentration of the resin binder component having a phenyl group described in Patent Document 2 is about 50 to 95% by weight of the total dry components (all components excluding the solvent) of the antireflection coating composition (Patent Document 2). (See paragraph 0033).
  • Double patterning or double exposure is described in Patent Document 3 and Patent Document 4, for example.
  • 5 to 8 of Patent Document 3 show a first lithography process for forming a first photosensitive film pattern from a first photosensitive film laminated on an organic material layer used as an antireflection film, and the first photosensitive film pattern.
  • a second lithography step is shown forming between the layer patterns.
  • Example 1 of FIG. 1 and FIG. 1 a step of forming a positive resist film on an organic antireflection film, and at least exposure and development are performed on the positive resist film to form a first resist pattern.
  • a second lithography step for forming at a position different from the above position is shown.
  • Japanese Patent No. 4038688 JP 2000-187331 A Japanese Patent No. 2803999 JP 2008-078220 A
  • the surface of the organic antireflection film is used again for exposure radiation and development in the second lithography process performed after the first lithography process.
  • the skirt shape of the resist pattern formed in the second lithography process does not become a straight shape, but tends to be a so-called footing shape.
  • the footing shape represents a shape in which the skirt is widened, in other words, a state where a portion where the resist pattern is in contact with the lower layer film is thick. This footing shape is also expressed as a skirt shape.
  • Patent Document 4 describes a method for solving the problem that the resist pattern after development becomes a “T-Top” shape or a reduced film shape (round shape). However, it cannot be said that an improvement measure for the skirt shape of the resist pattern is described.
  • the present invention relates to an additive used for preventing a skirt shape of a resist pattern formed on an underlayer film from becoming a footing shape, a resist underlayer film forming composition for lithography using the additive, and the resist underlayer
  • An object of the present invention is to provide a resist pattern forming method using a film forming composition.
  • L represents a linking group constituting a part of the main chain of the polymer
  • M includes a direct bond or at least one selected from —C ( ⁇ O) —, —CH 2 —, and —O—).
  • the copolymer further comprises the following formula (3): (Wherein R 2 represents a hydrogen atom or a methyl group, M has the same definition as in the first aspect, and A represents a substituent containing an adamantane ring or a lactone ring.)
  • the present invention relates to a resist underlayer film forming composition for lithography comprising a resin binder, a crosslinkable compound, a solvent, and the additive for a resist underlayer film forming composition according to any one of the first to fourth aspects.
  • the resist underlayer film forming composition for lithography according to the fifth aspect further comprising a compound that promotes a crosslinking reaction
  • the resist underlayer film forming composition for lithography according to the fifth aspect or the sixth aspect wherein the crosslinkable compound is a nitrogen-containing compound having 2 to 4 nitrogen atoms to which a methylol group or an alkoxymethyl group is bonded.
  • the compound that promotes the crosslinking reaction is a sulfonic acid compound, and relates to the resist underlayer film forming composition for lithography according to the sixth aspect
  • the compound for promoting the crosslinking reaction relates to the resist underlayer film forming composition for lithography according to the sixth aspect, which is a combination of an acid generator and a sulfonic acid compound.
  • a step of applying the resist underlayer film forming composition according to any one of the fifth to ninth aspects onto a semiconductor substrate and baking to form a resist underlayer film a resist film on the resist underlayer film Forming a first pattern on the resist underlayer film by exposing the resist film formed on the resist underlayer film, developing the resist film using a developer after the exposure
  • a method of forming a resist pattern used for manufacturing a semiconductor device including a step of forming a second pattern on the resist underlayer film exposed by the development so as not to overlap the first pattern.
  • the said exposure is related with the formation method of the resist pattern as described in a 10th viewpoint performed using ArF excimer laser.
  • the additive component is segregated near the surface of the resist underlayer film to be formed.
  • a resist pattern having a desired shape with improved footing shape can be formed on the resist underlayer film. In double patterning or double exposure, This is effective for improving the skirt shape of the formed pattern from a footing shape to a straight shape.
  • the additive according to the present invention contains a copolymer having at least the structural unit represented by the formula (1).
  • the structural unit V is, for example, the following formula: (2): (Wherein R 2 represents a hydrogen atom or a methyl group, M represents a direct bond or a linking group containing at least one selected from —C ( ⁇ O) —, —CH 2 — and —O—, Represents an alkyl group in which at least one hydrogen atom may be substituted with a fluorine atom, and at least one of M and Q contains a fluorine atom.) It is represented by In the above formula (2), R 2 may not be limited to a methyl group or a hydrogen atom that does not contain a fluorine atom. For example, it may be a methyl group in which at least one hydrogen atom is substituted with a fluorine atom, such as a trifluoromethyl group.
  • Q in the formula (2) represents, for example, an alkyl group having 1 to 3 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom.
  • alkyl group include a fluoromethyl group, a difluoromethyl group, a trifluoromethyl group, a trifluoroethyl group, and a trifluoropropyl group.
  • the copolymer is further represented by the following formula (3): (Wherein R 2 represents a hydrogen atom or a methyl group, M represents a direct bond or a linking group containing at least one selected from —C ( ⁇ O) —, —CH 2 — and —O—, Represents a substituent containing an adamantane ring or a lactone ring.) It can have the structural unit X represented by these.
  • R 2 may not be limited to a methyl group or a hydrogen atom that does not contain a fluorine atom. For example, it may be a methyl group in which at least one hydrogen atom is substituted with a fluorine atom, such as a trifluoromethyl group.
  • the substituent containing the adamantane ring or lactone ring may have a methyl group, an ethyl group or a hydroxy group as a substituent of the adamantane ring or lactone ring.
  • the substituent containing the lactone ring may be a substituent containing an adamantane structure, a norbornane structure, or a norbornene structure.
  • the lactone ring is preferably a 5-membered ring such as ⁇ -butyrolactone, but is not limited to a 5-membered ring, and may be a 6-membered ring such as ⁇ -valerolactone or a 7-membered ring such as ⁇ -caprolactone.
  • the crosslinkable compound contained in the composition for forming a resist underlayer film according to the present invention is, for example, a nitrogen-containing compound having 2 to 4 nitrogen atoms bonded with methylol groups or alkoxymethyl groups.
  • it can be added at a ratio of 1% by mass to 30% by mass with respect to the solid content of the composition for forming the lower layer film.
  • the solid content is defined in this specification as a component obtained by removing the solvent from the composition.
  • nitrogen-containing compounds include hexamethoxymethyl melamine, tetramethoxymethyl benzoguanamine, 1,3,4,6-tetrakis (methoxymethyl) glycoluril, 1,3,4,6-tetrakis (butoxymethyl) glycol.
  • Uril 1,3,4,6-tetrakis (hydroxymethyl) glycoluril, 1,3-bis (hydroxymethyl) urea, 1,1,3,3-tetrakis (butoxymethyl) urea and 1,1,3 3-tetrakis (methoxymethyl) urea is mentioned.
  • the resist underlayer film forming composition according to the present invention may further contain a compound that promotes a crosslinking reaction.
  • stimulates this crosslinking reaction can be added, for example in the ratio of 0.1 to 10 mass% with respect to solid content of the composition for resist underlayer film formation concerning this invention.
  • the compound that promotes the crosslinking reaction is, for example, a sulfonic acid compound, and may be a combination of an acid generator and a sulfonic acid compound.
  • the sulfonic acid compound include, for example, p-toluenesulfonic acid, trifluoromethanesulfonic acid, pyridinium-p-toluenesulfonic acid, camphorsulfonic acid, 5-sulfosalicylic acid, 4-chlorobenzenesulfonic acid, 4-hydroxybenzenesulfonic acid Benzenedisulfonic acid, 1-naphthalenesulfonic acid and pyridinium-1-naphthalenesulfonic acid.
  • the solvent contained in the resist underlayer film forming composition according to the present invention include, for example, propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monopropyl ether, methyl ethyl ketone, ethyl lactate, Examples include cyclohexanone, ⁇ -butyrolactone and N-methylpyrrolidone. A combination of at least two of these solvents may be used. And the ratio of the solvent with respect to the composition for resist lower layer film formation which concerns on this invention is 50 to 99.5 mass%, for example.
  • the resin binder contained in the resist underlayer film forming composition according to the present invention for example, polymers obtained in Synthesis Examples 1 to 4 described later can be applied. Further, as the resin binder, a base polymer contained in a known antireflection film forming composition or a known resist underlayer film forming composition can be applied as a resin binder.
  • the ratio of the resin binder with respect to the solid content of the composition for forming a resist underlayer film according to the present invention is, for example, 50% by mass or more and 99.5% by mass or less, and preferably 60% by mass or more and 90% by mass or less.
  • the composition for forming a resist underlayer film according to the present invention contains the above-mentioned copolymer as an additive, and the ratio thereof is, for example, 0.1% with respect to the solid content of the composition for forming a resist underlayer film according to the present invention. It is 0.5 mass% or more and 20 mass% or less, Preferably, they are 0.5 mass% or more and 10 mass% or less. When the proportion of the copolymer exceeds 20% by mass with respect to the solid content, the bottom shape of the formed resist pattern becomes an undercut profile, which causes a problem of pattern collapse.
  • the semiconductor substrate used in the method for forming a resist pattern according to the present invention is typically a silicon wafer, but is an SOI (Silicon on Insulator) substrate, or gallium arsenide (GaAs), indium phosphide (InP), or phosphide.
  • a compound semiconductor wafer such as gallium (GaP) may be used.
  • An insulating film such as a silicon oxide film, a nitrogen-containing silicon oxide film (SiON film), a carbon-containing silicon oxide film (SiOC film), or a fluorine-containing silicon oxide film (SiOF film) is formed on the semiconductor substrate. It may be formed. In this case, the resist underlayer film is formed on the film to be processed.
  • an ArF excimer laser can be used for the exposure performed in the method for forming a resist pattern according to the present invention.
  • the resist solution for forming the resist film may be either a positive type or a negative type, and a chemically amplified resist that is sensitive to an ArF excimer laser can be used.
  • an alkaline developer such as an aqueous tetramethylammonium hydroxide (TMAH) solution can be used.
  • TMAH aqueous tetramethylammonium hydroxide
  • the resist underlayer film forming composition to which the additive according to the present invention is added is formed on the resist underlayer film that has been exposed and exposed to the developer to form the first pattern.
  • the resist underlayer film forming composition according to the present invention is not limited to double patterning or double exposure, but the bottom shape of the resist pattern is footed. It can also be applied to the case where it is easily formed into a shape.
  • the average molecular weights of the polymers shown in the following Synthesis Examples 1 to 9 in this specification are measurement results by gel permeation chromatography (hereinafter abbreviated as GPC).
  • the measurement conditions etc. are as follows using the Tosoh Co., Ltd. product GPC apparatus for a measurement.
  • GPC column Shodex (registered trademark) and Asahipak (registered trademark) (Showa Denko KK) Column temperature: 40 ° C Solvent: N, N-dimethylformamide (DMF) Flow rate: 0.6 ml / min Standard sample: Polystyrene (manufactured by Tosoh Corporation)
  • ⁇ Synthesis Example 8> 4.50 g of 4-tertiarybutoxystyrene, 3.00 g of trifluoroethyl methacrylate, and 4.50 g of 2-ethyl-2-adamantyl methacrylate were dissolved in 50.6 g of propylene glycol monomethyl ether, and the temperature was raised to 70 ° C. A solution prepared by dissolving 0.15 g of azobisisobutyronitrile in 10 g of propylene glycol monomethyl ether was slowly added dropwise, followed by reaction at 80 ° C. for 24 hours to obtain a solution containing a polymer. When GPC analysis was performed, the weight average molecular weight was 30,000 in terms of standard polystyrene. The polymer obtained in this synthesis example corresponds to a copolymer contained in the additive according to the present invention.
  • Example 1 To 4 g of a solution containing 0.8 g of the polymer obtained in Synthesis Example 1, 0.2 g of tetramethoxymethyl glycoluril (manufactured by Nippon Cytec Industries, Inc., trade name: POWDERLINK [registered trademark] 1174), pyridinium-p- 0.02 g of toluenesulfonic acid and 0.08 g of the polymer solution obtained in Synthesis Example 5 were mixed and dissolved in 25.02 g of propylene glycol monomethyl ether and 12.12 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with the hole diameter of 0.05 micrometer, and prepared the composition (solution) for resist underlayer film formation.
  • POWDERLINK registered trademark
  • Example 2 To 4 g of a solution containing 0.8 g of the polymer obtained in Synthesis Example 2, 0.2 g of tetramethoxymethylglycoluril (manufactured by Nippon Cytec Industries, Inc., trade name: POWDERLINK [registered trademark] 1174), 5-sulfosalicylic acid 0.02 g and 0.08 g of the polymer solution obtained in Synthesis Example 5 were mixed and dissolved in 25.02 g of propylene glycol monomethyl ether and 12.12 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with the hole diameter of 0.05 micrometer, and prepared the composition (solution) for resist underlayer film formation.
  • POWDERLINK registered trademark
  • Example 3 To 4 g of the solution containing 1.2 g of the polymer obtained in Synthesis Example 3, 0.3 g of tetramethoxymethyl glycoluril (manufactured by Nippon Cytec Industries, Inc., trade name: POWDERLINK [registered trademark] 1174), 5-sulfosalicylic acid 0.03 g and 0.12 g of the polymer solution obtained in Synthesis Example 5 were mixed and dissolved in 38.97 g of propylene glycol monomethyl ether and 17.90 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with the hole diameter of 0.05 micrometer, and prepared the composition (solution) for resist underlayer film formation.
  • tetramethoxymethyl glycoluril manufactured by Nippon Cytec Industries, Inc., trade name: POWDERLINK [registered trademark] 1174
  • Example 4 To 4 g of the solution containing 1.2 g of the polymer obtained in Synthesis Example 1, 0.3 g of tetramethoxymethyl glycoluril (manufactured by Nippon Cytec Industries, Inc., trade name: POWDERLINK [registered trademark] 1174), 5-sulfosalicylic acid 0.03 g and 0.12 g of the polymer solution obtained in Synthesis Example 6 were mixed and dissolved in 38.97 g of propylene glycol monomethyl ether and 17.90 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with the hole diameter of 0.05 micrometer, and prepared the composition (solution) for resist underlayer film formation.
  • tetramethoxymethyl glycoluril manufactured by Nippon Cytec Industries, Inc., trade name: POWDERLINK [registered trademark] 1174
  • Example 5 To 4 g of a solution containing 1.2 g of the polymer obtained in Synthesis Example 4, 0.3 g of tetramethoxymethyl glycoluril (manufactured by Nippon Cytec Industries, Inc., trade name: POWDERLINK [registered trademark] 1174), 5-sulfosalicylic acid 0.03 g and 0.12 g of the polymer solution obtained in Synthesis Example 8 were mixed and dissolved in 38.97 g of propylene glycol monomethyl ether and 17.90 g of propylene glycol monomethyl ether acetate to obtain a solution. Then, it filtered using the polyethylene micro filter with a hole diameter of 0.10 micrometer, and also filtered using the polyethylene micro filter with the hole diameter of 0.05 micrometer, and prepared the composition (solution) for resist underlayer film formation.
  • tetramethoxymethyl glycoluril manufactured by Nippon Cytec Industries, Inc., trade name: POWDERLINK [registered trademark] 1174
  • the target line width is set to 65 nm or 80 nm line and space, and the resist pattern dimensions at the optimum exposure and focus are measured with a length measuring SEM, and the sectional shape of the resist pattern in the direction perpendicular to the substrate (silicon wafer) is measured. By observing with a cross-sectional SEM, it can be confirmed whether or not a target resist pattern is formed.
  • the skirt shape of the first pattern and the second pattern was compared with a cross-sectional SEM, and evaluation was performed in three stages: skirt shape, pattern collapse, and straight shape.
  • the results are shown in Table 1. 1 and 2 show cross-sectional SEM images.

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PCT/JP2009/071320 2008-12-26 2009-12-22 レジスト下層膜形成組成物用添加剤及びそれを含むレジスト下層膜形成用組成物 WO2010074075A1 (ja)

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KR20190113745A (ko) 2017-02-03 2019-10-08 닛산 가가쿠 가부시키가이샤 우레아결합을 갖는 구조단위를 갖는 폴리머를 포함하는 레지스트 하층막 형성 조성물
WO2021132383A1 (ja) * 2019-12-25 2021-07-01 日産化学株式会社 剥離層形成用組成物及び剥離層
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JP2010202723A (ja) * 2009-03-02 2010-09-16 Tosoh Corp ブロック共重合体及びその製造方法
CN103907060B (zh) * 2011-10-20 2018-05-01 日产化学工业株式会社 形成抗蚀剂下层膜的组合物所用的添加剂及包含该添加剂的形成抗蚀剂下层膜的组合物
JPWO2013058189A1 (ja) * 2011-10-20 2015-04-02 日産化学工業株式会社 レジスト下層膜形成組成物用添加剤及びそれを含むレジスト下層膜形成組成物
US9165782B2 (en) 2011-10-20 2015-10-20 Nissan Chemical Industries, Ltd. Additive for resist underlayer film-forming composition and resist underlayer film-forming composition containing the same
CN103907060A (zh) * 2011-10-20 2014-07-02 日产化学工业株式会社 形成抗蚀剂下层膜的组合物所用的添加剂及包含该添加剂的形成抗蚀剂下层膜的组合物
KR101779884B1 (ko) 2011-10-20 2017-09-19 닛산 가가쿠 고교 가부시키 가이샤 레지스트 하층막 형성조성물용 첨가제 및 이를 포함하는 레지스트 하층막 형성조성물
WO2013058189A1 (ja) * 2011-10-20 2013-04-25 日産化学工業株式会社 レジスト下層膜形成組成物用添加剤及びそれを含むレジスト下層膜形成組成物
US9927705B2 (en) 2013-07-23 2018-03-27 Nissan Chemical Industries, Ltd. Additive for resist underlayer film-forming composition and resist underlayer film-forming composition containing the same
WO2015146443A1 (ja) * 2014-03-26 2015-10-01 日産化学工業株式会社 添加剤及び該添加剤を含むレジスト下層膜形成組成物
KR20160138397A (ko) 2014-03-26 2016-12-05 닛산 가가쿠 고교 가부시키 가이샤 첨가제 및 이 첨가제를 포함하는 레지스트 하층막 형성 조성물
JPWO2015146443A1 (ja) * 2014-03-26 2017-04-13 日産化学工業株式会社 添加剤及び該添加剤を含むレジスト下層膜形成組成物
US10067423B2 (en) 2014-03-26 2018-09-04 Nissan Chemical Industries, Ltd. Additive and resist underlayer film-forming composition containing the same
US10795261B2 (en) 2015-11-17 2020-10-06 Nissan Chemical Industries, Ltd. Additive for resist underlayer film-forming composition and resist underlayer film-forming composition containing the same
KR20180083852A (ko) 2015-11-17 2018-07-23 닛산 가가쿠 고교 가부시키 가이샤 레지스트 하층막 형성 조성물용 첨가제 및 이 첨가제를 포함하는 레지스트 하층막 형성 조성물
US11675270B2 (en) 2016-09-15 2023-06-13 Nissan Chemical Corporation Resist underlayer film-forming composition
KR20190051951A (ko) 2016-09-15 2019-05-15 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물
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KR20230111266A (ko) 2017-02-03 2023-07-25 닛산 가가쿠 가부시키가이샤 우레아결합을 갖는 구조단위를 갖는 폴리머를 포함하는레지스트 하층막 형성 조성물
US12025915B2 (en) 2017-02-03 2024-07-02 Nissan Chemical Corporation Resist underlayer film-forming composition comprising polymer having structural unit having urea linkage
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