WO2010059556A1 - Procédé et système de décapage du bord d'une tranche de semi-conducteur - Google Patents

Procédé et système de décapage du bord d'une tranche de semi-conducteur Download PDF

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Publication number
WO2010059556A1
WO2010059556A1 PCT/US2009/064545 US2009064545W WO2010059556A1 WO 2010059556 A1 WO2010059556 A1 WO 2010059556A1 US 2009064545 W US2009064545 W US 2009064545W WO 2010059556 A1 WO2010059556 A1 WO 2010059556A1
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WO
WIPO (PCT)
Prior art keywords
wafer
roller
etchant
wafers
cassette
Prior art date
Application number
PCT/US2009/064545
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English (en)
Inventor
Robert W. Standley
Original Assignee
Memc Electronic Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=41466941&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2010059556(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Memc Electronic Materials, Inc. filed Critical Memc Electronic Materials, Inc.
Priority to JP2011537533A priority Critical patent/JP2012509599A/ja
Priority to CN2009801547484A priority patent/CN102282647A/zh
Priority to US13/130,160 priority patent/US8735261B2/en
Priority to EP09761085A priority patent/EP2359390A1/fr
Publication of WO2010059556A1 publication Critical patent/WO2010059556A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61P—SPECIFIC THERAPEUTIC ACTIVITY OF CHEMICAL COMPOUNDS OR MEDICINAL PREPARATIONS
    • A61P25/00—Drugs for disorders of the nervous system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges

Definitions

  • the embodiments described herein generally relate to the manufacture of silicon wafers, and more particularly to a method for stripping an insulator from the edge of a semiconductor wafer.
  • Semiconductor wafers are generally prepared from a single crystal ingot (e.g., a silicon ingot) which is trimmed and ground to have one or more flats or notches for proper orientation of the wafer in subsequent procedures. The ingot is then sliced into individual wafers. An individual donor wafer is bonded to a handle wafer to form a bonded wafer pair. Either the donor wafer or the handle wafer or both may have an insulating layer (e.g., an oxide layer) deposited on them prior to bonding.
  • insulating layer e.g., an oxide layer
  • the layers transferred from the donor wafer to the handle wafer do not extend to the radial edges of the bonded wafer, and instead terminate between one and five millimeters inward from the edge of the bonded wafer.
  • a narrow annulus of exposed handle wafer i.e., a terrace region
  • the terrace region will be covered by this insulating layer.
  • Silicon dioxide is a commonly used insulating layer.
  • Other insulating layers may be used if the composition of an etchant used to remove the layers is modified.
  • a first aspect is directed to a wafer edge etchant application system for applying etchant to edges wafers.
  • the system comprises a sump configured for holding etchant, a roller having an outer surface in fluid communication with the sump and configured to have etchant thereon, and a wafer cassette configured to retain wafers positioned therein so that edges of the wafers are in contact with the roller and the cassette permitting axial rotation of wafers about an axis.
  • Some of the wafers have a handle oxide in a terrace region and the system is configured to strip the handle oxide from the terrace region to improve layer thickness uniformity adjacent to the terrace region and inhibit nodule growth in the terrace region.
  • Another aspect is directed to a method of applying etchant to the edge of a wafer.
  • the method comprises placing the wafer edge in contact with a roller and rotating the roller about a longitudinal axis of the roller. At least a portion of the roller contacts an etchant contained in a sump during rotation so that etchant is applied to the wafer edge.
  • the step of placing the wafer edge includes placing the wafer in a wafer cassette. The cassette prevents lateral movement of the wafer while permitting rotation about an axis perpendicular to a planar surface of the wafer, wherein the axis is parallel to a longitudinal axis of the roller.
  • each wafer includes a handle oxide that is stripped by the etchant.
  • Each wafer is a silicon-on-insulator wafer or a bonded wafer pair prior to removal of the bulk of the donor wafer thickness, that has been bonded in a preceding step.
  • Each wafer is subjected to a high temperature, gas phase HCl etch or an epitaxial growth step after etchant is applied.
  • Figure 1 is a perspective view of a wafer edge etchant application mechanism.
  • Figure 2 is a top plan view of the wafer edge etchant application mechanism with a cassette and accompanying wafers removed.
  • Figure 3 is a side elevation view of the wafer edge etchant application mechanism.
  • Figure 4 is a perspective view of the sump, roller, and drive source in an assembled configuration.
  • Figure 5 is a perspective view of a roller included in the wafer edge etchant application mechanism.
  • Figure 6 is side elevation view of the roller depicted in Figure 4.
  • Figure 7 is a perspective view of a sump included in the wafer edge etchant application mechanism.
  • the etchant mechanism 100 comprises a sump 110 and a roller 120.
  • a cassette 130 may be included in the etchant mechanism 100, according to some embodiments.
  • the roller 120 and cassette 130 are constructed of materials that are resistant to damage from the etchant, while not being likely to be a source of contamination themselves.
  • Exemplary materials include: fluorinated polymeric materials such as polytetrafluoroethylene (PTFE) or perfluroalkoxy (PFA).
  • the sump 110 (as best seen in Figure 7) is configured to hold an etchant mixture in a void 112 therein.
  • the void 112 is generally open at its top and has a depth, a length, and a width.
  • the void 112 is defined in the sump 110 by a bottom plate 114 and four side walls 116 perpendicular to the bottom plate.
  • the sump 110 is constructed from one or more pieces of material that are suitably formed to comprise an enclosure that is capable of containing an amount of liquid etchant.
  • the length, depth and width of the sump 110 are suitably sized to hold a volume of etchant sufficient to etch a plurality of wafers 140.
  • the sump 110 can contain a variety of indentations 118 formed therein for receiving corresponding protrusions formed in a bottom surface of the cassette.
  • a fluid connection mechanism 122 may be formed or inserted into a portion of the sump 110 or roller 120.
  • the fluid connection mechanism 122 may be used to transport etchant into the sump 110.
  • An additional fluid connection mechanism (not shown) may also be used to withdraw etchant from the sump 110. The withdrawn etchant may be discarded, or in some embodiments filtered or otherwise processed for reuse.
  • a notch 119 is formed therein to receive the roller (as best seen in Figures 2, 4, and 7).
  • the notch 119 is configured to receive the outer housing of a roller bearing or other bushing and constrain it from movement, whether longitudinal, lateral, or rotational. Longitudinally opposite ends 124 of the roller are received within the roller bearing or bushing.
  • the roller bearing or bushing serves to restrain lateral and longitudinal movement by the roller 120, while still permitting the roller to rotate about its longitudinal axis.
  • the sump includes openings 113 formed therein for insertion of leveling legs 111 to level the sump 110 in relation to an underlying surface.
  • the leveling legs 111 may be of any suitable type and the corresponding openings 113 may be sized and positioned based on the dimensions of the leveling legs. Furthermore, the number and location of leveling legs 111 utilized in leveling the sump 110 may be varied based on a number of factors. Although not shown, additional fasteners may be utilized to secure the sump 110 to the underlying surface, or the leveling legs 111 may secure the sump to the underlying surface.
  • the etchant contained in the void 112 of the sump 110 is hydrofluoric acid or a mixture of hydrofluoric acid and acetic acid.
  • the etchant is a solution of hydrofluoric acid diluted in de -ionized water.
  • a surfactant or viscosity modifier e.g., acetic acid
  • the acidic etchant is in the form of an aqueous solution comprising a source of hydrogen ions.
  • the source of the hydrogen ions may be selected from the group comprising hydrofluoric acid, nitric acid, phosphoric acid, acetic acid, sulfuric acid, hydrochloric acid, citric acid, oxalic acid, propionic acid, permanaganic acid, and combinations thereof.
  • the source of hydrogen ions may be present in the etchant at a concentration of at least about 40 wt%.
  • the acidic etchant comprises essentially water and the source of hydrogen ions.
  • the acidic etchant comprises one or more additives along with the source of hydrogen ions.
  • roller 120 (best seen in Figures 5 and 6), it is generally cylindrical and elongate in shape and is configured to rotate about its longitudinal axis.
  • the length (i.e., depth) of the roller 120 generally exceeds its overall diameter, according to one embodiment.
  • the roller 120 has an outer diameter and a length defined by longitudinally opposite ends 124 of the roller.
  • the longitudinally opposite ends 124 of the roller 120 are configured to be received into the roller bearings or bushings described above.
  • One or both of the longitudinally opposite ends 124 of the roller 120 are configured for attachment to a drive source 150 by a coupling mechanism 152 (e.g., gears, sprockets, chains, pulleys, belts, shafts, etc.).
  • the coupling mechanism 152 permits the transmission of rotational energy from the drive source to the roller.
  • the drive source 150 is then operable to rotate the roller 120 about its longitudinal axis.
  • the drive source 150 may be a motor or other similar device capable of generating rotational energy.
  • the roller 120 can be comprised of a single piece of material.
  • the material is configured to absorb etchant when the roller 120 comes into contact therewith, and subsequently transfer at least a portion of the retained etchant to a circumferential edge 142 of the wafer 140 that comes into contact with the roller.
  • the circumferential edge 142 includes the surface of the wafer 140 up to 10mm from the edge (i.e., the terrace region and handle oxide deposited thereon).
  • the roller 120 may be constructed out of materials such as fluorinated polymeric materials such as polytetrafluoroethylene (PTFE) or perfluroalkoxy (PFA).
  • PTFE polytetrafluoroethylene
  • PFA perfluroalkoxy
  • the roller 120 may be comprised of a single piece of material, the physical characteristics of the material may vary.
  • an outer surface of the roller 120 can mechanically altered to increase the amount of etchant which can be absorbed into the outer surface.
  • voids may be formed in the outer surface of the roller 120.
  • the outer surface of the roller 120 is mechanically altered to resemble bristles of a brush.
  • the roller 120 is constructed of a material that is flexible in composition and more compliant than the wafers in order to reduce the likelihood of mechanical damage to the wafers resulting from contact with the roller.
  • the roller is composed of a material that has a sufficient surface roughness so that upon rotation of the roller, the wafers in contact therewith rotate as well.
  • the roller 120 is comprised of a cylindrical member and an outer cover surrounding the cylindrical member. Longitudinally opposite ends 124 of the cylindrical member are received in the roller bearings or bushings connected to the sump. Like the embodiment described above, the roller 120 and outer cover are constructed out of materials such as fluorinated polymeric materials such as PTFE or PFA.
  • the outer cover is constructed out of a material that is capable of absorbing etchant and retaining it therein and then transferring it to a portion of the wafer that comes into contact with the outer surface.
  • the outer cover can be constructed out of a material that has a sponge-like structure with voids formed therein to retain etchant before dispersing at least some of it on the edge 142 of the wafer 140 that it comes in contact with.
  • the outer cover may be similar in physical construction to a brush, with a substrate and bristles attached therein.
  • the outer cover may include elastic elements disposed therein to secure the outer cover to an outer surface of the cylindrical member.
  • different fastening systems can be utilized to secure the outer cover to the cylindrical member (e.g., hook and loop fasteners or adhesives). Accordingly, the outer cover and cylindrical member are securely fastened together to ensure that the outer cover substantially rotates in unison with the cylindrical member when the cylindrical member is rotated (i.e., the outer cover does not slip when the cylindrical member is rotated).
  • the cassette 130 as seen in Figures 1 and 3, and accompanying wafers 140 are placed over the roller 120 and on top of the sump 110, with a portion of the roller coming into contact with the wafers.
  • Protrusions 132 formed in a portion of a bottom surface of the cassette 130 mate with corresponding indentations 118 in the sump 110 to position the cassette relative to the sump.
  • the configuration of the protrusions 132 and indentations 118 are provided for illustrative purposes, and it should be understood that a variety of configurations may utilized according to the embodiments.
  • the cassette 130 has a plurality of slots 134 (shown in Figure 1) formed therein for receiving the wafers 140.
  • the slots 134 prevent the wafers 140 from coming into contact with each other and restrain the lateral movement of the wafers.
  • the cassette 130 and the plurality of slots 134 permit the wafers placed therein to rotate about a longitudinal axis of the wafers.
  • the cassette 130, plurality of slots 134, protrusions 132, and indentations 118 are configured such that the longitudinal axis of the wafers 140 when positioned in the cassette is parallel to the longitudinal axis of the roller 120.
  • the wafers 140 have a handle oxide and are silicon-on-insulator wafers or bonded wafer pairs prior to removal of the bulk of the donor wafer thickness, which were bonded in a previous step.
  • the cassette 130 is generally open at its top 136 to permit wafers 140 to be placed therein and subsequently removed.
  • the cassette has a void formed along its longitudinal axis along a bottom portion 138 to permit the circumferential edge 142 of the wafers 140 to selectively come into contact with the roller 120.
  • the roller 120 acts to slightly displace the wafers 140 out of their slots 134 in the cassette 130 in the direction of the top 136 of the cassette when the cassette is placed on top of the sump 110, thus decreasing the amount of rotational force required to rotate the wafers.
  • the portions of the cassette 130 which come into contact with the wafers 140 are coated with a low- friction coating, thus reducing the co-efficient of friction for the coated surfaces.
  • a portion of the roller 120 is immersed in the etchant contained in the void 112 in the sump 100.
  • the roller 120 rotates about its longitudinal axis, different portions along a circumference of the roller 120 come into contact with the etchant retained in the void 112 in the sump 110.
  • a fixed point thereon will alternately come into and out of contact with the etchant.
  • the roller 120 When the roller 120 is rotated, the wafers 140 in contact with the roller rotate as well.
  • the composition of the roller 120, or in some embodiments the outer cover, has a co-efficient of friction sufficient to transmit rotational energy the circumferential edge 142 of the wafer 140.
  • the etchant is transferred to the outer surface of the roller 120 as it passes through the etchant contained in the void 112 in the sump 100 as the roller rotates.
  • the roller 120 then transfers the etchant to the circumferential edge 142 of wafer 140.
  • the rotational velocity of the roller 120 may be altered to control the rate at which etchant is applied to the circumferential edge 142 of the wafer 140, and consequently control the rate and radial extent of etching of the oxide from the donor wafer.
  • Typical rotational velocities of the roller are 2 to 70 revolutions per minute.
  • the etchant acts upon the silicon oxide in the terrace region of the wafer 140 and removes it therefrom, thus leaving the terrace region free from silicon oxide.
  • the chemical reaction describing the interaction of the silicon oxide is represented by: [0039] SiO 2 + 6 HF -> SiH 2 F 6 + 2 H 2 O
  • the rate of etching, the angular velocity of the roller 120, and the time required to etch the edges 142 of the wafers 140 may each be modified to affect the rate of removal of oxide from the handle.
  • the rate of etching can be slowed by diluting the etchant in de -ionized water.
  • Etchant can be prevented from dripping down either surface of the wafer 140 (beyond the edge 142 where it is brought into contact with the wafer) by adjusting the angular velocity of the rollers 120 or increasing the viscosity of the etchant.
  • the addition of acetic acid to the etchant increases its viscosity without disrupting the chemical reaction of the etching process.
  • the increased viscosity of the etchant prevents it from dripping down the surface of the wafer 140, as well as increasing the ability of the etchant to adhere to the roller 120 during rotation when the roller is not in contact with the edge 142 of the wafer. Furthermore, the viscosity of the etchant can be controlled to affect how much of the edge 142 is contacted by the etchant as increasing the viscosity of the etchant decreases the size of the portion of the edge 142 that is contacted by the etchant.
  • the embodiments described above include a roller system for the stripping of handle oxide from a narrow annular region on a surface of a bonded wafer.
  • the etchant mechanism is configured for processing wafers while they are in a cassette. Accordingly, multiple wafers can be simultaneously processed as cassettes are capable of retaining a plurality of wafers therein.
  • the method uses as a starting material a silicon wafer that has been sliced from a single crystal silicon ingot and further processed, for example, by bonding it to another (i.e., a donor) wafer and performing processes thereon resulting in the formation of a bonded wafer pair or silicon-on-insulator (SOI) wafer.
  • the processes may result in the formation of a handle oxide along a circumferential edge (i.e., a terrace region) of the wafer.
  • the terrace may extend up to 10 mm from a circumferential edge of the wafer.
  • the removal of the handle oxide is interchangeably referred to as stripping or etching throughout the detailed description above.
  • the etching process can be performed at any step between wafer bonding and before an epi-smoothing or thickening process. However, according to some embodiments the etching process is performed prior to the separation of the bonded wafer pair.
  • the bonded wafer pair may be separated by a cleaving operation.
  • the donor wafer protects what will become the surface of the finished wafer from mechanical contact with the cassette and possible damage from contact with the etchant.
  • the method embodiments described herein comprise treating an edge portion of a bonded silicon wafer pair by removing silicon oxide from a terrace region along a circumferential edge of the bonded pair.
  • a substantial portion of the donor wafer i.e., the bulk of the donor wafer
  • the substantial portion of the donor wafer may be separated from the bonded wafer pair by a cleaving operation.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Organic Chemistry (AREA)
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  • Bioinformatics & Cheminformatics (AREA)
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  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Biomedical Technology (AREA)
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  • Life Sciences & Earth Sciences (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
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  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)

Abstract

L'invention porte sur un procédé et un système pour appliquer un agent d’attaque chimique sur les bords d'une pluralité de tranches. Le système comprend un carter configuré pour contenir un agent d’attaque chimique, un rouleau ayant une surface extérieure en communication fluide avec le carter et configurée pour avoir de l'agent d’attaque chimique sur elle, une cassette à tranches configurée pour retenir des tranches positionnées en son sein de telle manière que des bords des tranches sont en contact avec le rouleau. La cassette permet une rotation axiale des tranches autour d'un axe. Un procédé d'application d'agent d’attaque chimique sur le bord de la tranche comprend le placement du bord de la tranche en contact avec le rouleau et la mise en rotation du rouleau autour d'un axe longitudinal du rouleau. Au moins une partie du rouleau entre en contact avec un agent d’attaque chimique contenu dans un carter durant la rotation de sorte que l'agent d’attaque chimique est appliqué sur le bord de la tranche.
PCT/US2009/064545 2008-11-19 2009-11-16 Procédé et système de décapage du bord d'une tranche de semi-conducteur WO2010059556A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011537533A JP2012509599A (ja) 2008-11-19 2009-11-16 半導体ウェーハのエッジを剥離する方法及びシステム
CN2009801547484A CN102282647A (zh) 2008-11-19 2009-11-16 剥除半导体晶片边缘的方法和系统
US13/130,160 US8735261B2 (en) 2008-11-19 2009-11-16 Method and system for stripping the edge of a semiconductor wafer
EP09761085A EP2359390A1 (fr) 2008-11-19 2009-11-16 Procédé et système de décapage du bord d'une tranche de semi-conducteur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11610508P 2008-11-19 2008-11-19
US61/116,105 2008-11-19

Publications (1)

Publication Number Publication Date
WO2010059556A1 true WO2010059556A1 (fr) 2010-05-27

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ID=41466941

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/064545 WO2010059556A1 (fr) 2008-11-19 2009-11-16 Procédé et système de décapage du bord d'une tranche de semi-conducteur

Country Status (8)

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US (1) US8735261B2 (fr)
EP (1) EP2359390A1 (fr)
JP (1) JP2012509599A (fr)
KR (1) KR20110099108A (fr)
CN (1) CN102282647A (fr)
CL (1) CL2016001707A1 (fr)
TW (1) TW201029094A (fr)
WO (1) WO2010059556A1 (fr)

Cited By (1)

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WO2012095216A1 (fr) * 2011-01-12 2012-07-19 Siltronic Ag Appareil et procédé pour la gravure d'un bord de tranche

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TWI569351B (zh) * 2015-04-30 2017-02-01 環球晶圓股份有限公司 晶圓旋轉裝置
CN107452664B (zh) * 2016-05-30 2019-06-21 北京通美晶体技术有限公司 从晶片揭除粘膜的方法及装置
TWI630668B (zh) * 2016-10-05 2018-07-21 亞亞科技股份有限公司 Wafer inspection equipment cleaning device
CN110137306A (zh) * 2019-05-08 2019-08-16 苏州联诺太阳能科技有限公司 一种具有透明导电氧化薄膜的电池的化学刻蚀方法

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TW201029094A (en) 2010-08-01
CN102282647A (zh) 2011-12-14
CL2016001707A1 (es) 2017-02-17
US8735261B2 (en) 2014-05-27
KR20110099108A (ko) 2011-09-06
EP2359390A1 (fr) 2011-08-24
US20110223741A1 (en) 2011-09-15

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