GB1483746A - Processing of wafers - Google Patents

Processing of wafers

Info

Publication number
GB1483746A
GB1483746A GB5470774A GB5470774A GB1483746A GB 1483746 A GB1483746 A GB 1483746A GB 5470774 A GB5470774 A GB 5470774A GB 5470774 A GB5470774 A GB 5470774A GB 1483746 A GB1483746 A GB 1483746A
Authority
GB
United Kingdom
Prior art keywords
wafers
etching
dec
rods
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5470774A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Publication of GB1483746A publication Critical patent/GB1483746A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/08Apparatus, e.g. for photomechanical printing surfaces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

1483746 Etching MONSANTO CO 18 Dec 1974 [19 Dec 1973] 54707/74 Heading B6J Circular wafers such as silicon are etched with a mixture of nitric acid, hydrofluoric acid and acetic acid in an apparatus comprising an etching chamber 21, Fig. 1 a return chamber 41 and a heat-exchange chamber 35, through which the etchant is circulated by a pump. A plurality of wafers are supported vertically side-by-side in grooves 71, Fig. 2, spaced along two rods 69 mounted in a removable support rack 23, the rods being rotated by an electric motor in a detachable drive unit. Air from a tube 43 is blown through a channel 47 and releases volatile components in the etching solution to escape through a duct 53. The etchant temperature is maintained by coolers 37 and heaters 55 controlled by a sensor 39.
GB5470774A 1973-12-19 1974-12-18 Processing of wafers Expired GB1483746A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42638773A 1973-12-19 1973-12-19

Publications (1)

Publication Number Publication Date
GB1483746A true GB1483746A (en) 1977-08-24

Family

ID=23690593

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5470774A Expired GB1483746A (en) 1973-12-19 1974-12-18 Processing of wafers

Country Status (5)

Country Link
JP (1) JPS5093775A (en)
BE (1) BE823525A (en)
CA (1) CA1027465A (en)
DE (1) DE2459892A1 (en)
GB (1) GB1483746A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2142283A (en) * 1983-06-27 1985-01-16 Psi Star Inc Liquid etching
GB2313811A (en) * 1996-06-05 1997-12-10 Samsung Electronics Co Ltd Wafer overflow etching bath having outlet holes in sidewalls
CN113793819A (en) * 2021-09-16 2021-12-14 长江存储科技有限责任公司 Chemical tank and temperature control method thereof
CN115241330A (en) * 2022-09-19 2022-10-25 英利能源发展(天津)有限公司 Semiconductor silicon wafer device for solar cell etched by hydrofluoric acid

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2326479A1 (en) * 1975-10-03 1977-04-29 Radiotechnique Compelec PROCESS FOR PICKLING SEMICONDUCTOR PLATES, ESPECIALLY FOR SOLAR CELLS AND APPARATUS FOR IMPLEMENTING THE PROCESS
JPS5288967U (en) * 1975-12-26 1977-07-02
JPS5721321Y2 (en) * 1975-12-26 1982-05-08
JPS5619933Y2 (en) * 1978-01-10 1981-05-12
JPS5617021A (en) * 1979-07-20 1981-02-18 Fujitsu Ltd Surface treatment of substrate
JPS5729140U (en) * 1980-07-24 1982-02-16
JPS6327784Y2 (en) * 1980-09-19 1988-07-27
US5278104A (en) * 1989-07-25 1994-01-11 Kabushiki Kaisha Toshiba Semiconductor wafer carrier having a dust cover
JPH0770505B2 (en) * 1989-07-25 1995-07-31 株式会社東芝 Semiconductor device support carrier
US5054519A (en) * 1990-12-26 1991-10-08 Imtec Products, Inc. Recirculating chemical bath with inflow and self balancing outflow
US8309464B2 (en) * 2008-03-31 2012-11-13 Memc Electronic Materials, Inc. Methods for etching the edge of a silicon wafer
EP2359390A1 (en) * 2008-11-19 2011-08-24 MEMC Electronic Materials, Inc. Method and system for stripping the edge of a semiconductor wafer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2142283A (en) * 1983-06-27 1985-01-16 Psi Star Inc Liquid etching
GB2313811A (en) * 1996-06-05 1997-12-10 Samsung Electronics Co Ltd Wafer overflow etching bath having outlet holes in sidewalls
GB2313811B (en) * 1996-06-05 2000-09-20 Samsung Electronics Co Ltd A chemical bath
CN113793819A (en) * 2021-09-16 2021-12-14 长江存储科技有限责任公司 Chemical tank and temperature control method thereof
CN115241330A (en) * 2022-09-19 2022-10-25 英利能源发展(天津)有限公司 Semiconductor silicon wafer device for solar cell etched by hydrofluoric acid

Also Published As

Publication number Publication date
DE2459892A1 (en) 1975-09-04
CA1027465A (en) 1978-03-07
JPS5093775A (en) 1975-07-26
BE823525A (en) 1975-06-18

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee