GB1483746A - Processing of wafers - Google Patents
Processing of wafersInfo
- Publication number
- GB1483746A GB1483746A GB5470774A GB5470774A GB1483746A GB 1483746 A GB1483746 A GB 1483746A GB 5470774 A GB5470774 A GB 5470774A GB 5470774 A GB5470774 A GB 5470774A GB 1483746 A GB1483746 A GB 1483746A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafers
- etching
- dec
- rods
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
1483746 Etching MONSANTO CO 18 Dec 1974 [19 Dec 1973] 54707/74 Heading B6J Circular wafers such as silicon are etched with a mixture of nitric acid, hydrofluoric acid and acetic acid in an apparatus comprising an etching chamber 21, Fig. 1 a return chamber 41 and a heat-exchange chamber 35, through which the etchant is circulated by a pump. A plurality of wafers are supported vertically side-by-side in grooves 71, Fig. 2, spaced along two rods 69 mounted in a removable support rack 23, the rods being rotated by an electric motor in a detachable drive unit. Air from a tube 43 is blown through a channel 47 and releases volatile components in the etching solution to escape through a duct 53. The etchant temperature is maintained by coolers 37 and heaters 55 controlled by a sensor 39.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42638773A | 1973-12-19 | 1973-12-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1483746A true GB1483746A (en) | 1977-08-24 |
Family
ID=23690593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5470774A Expired GB1483746A (en) | 1973-12-19 | 1974-12-18 | Processing of wafers |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5093775A (en) |
BE (1) | BE823525A (en) |
CA (1) | CA1027465A (en) |
DE (1) | DE2459892A1 (en) |
GB (1) | GB1483746A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2142283A (en) * | 1983-06-27 | 1985-01-16 | Psi Star Inc | Liquid etching |
GB2313811A (en) * | 1996-06-05 | 1997-12-10 | Samsung Electronics Co Ltd | Wafer overflow etching bath having outlet holes in sidewalls |
CN113793819A (en) * | 2021-09-16 | 2021-12-14 | 长江存储科技有限责任公司 | Chemical tank and temperature control method thereof |
CN115241330A (en) * | 2022-09-19 | 2022-10-25 | 英利能源发展(天津)有限公司 | Semiconductor silicon wafer device for solar cell etched by hydrofluoric acid |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2326479A1 (en) * | 1975-10-03 | 1977-04-29 | Radiotechnique Compelec | PROCESS FOR PICKLING SEMICONDUCTOR PLATES, ESPECIALLY FOR SOLAR CELLS AND APPARATUS FOR IMPLEMENTING THE PROCESS |
JPS5288967U (en) * | 1975-12-26 | 1977-07-02 | ||
JPS5721321Y2 (en) * | 1975-12-26 | 1982-05-08 | ||
JPS5619933Y2 (en) * | 1978-01-10 | 1981-05-12 | ||
JPS5617021A (en) * | 1979-07-20 | 1981-02-18 | Fujitsu Ltd | Surface treatment of substrate |
JPS5729140U (en) * | 1980-07-24 | 1982-02-16 | ||
JPS6327784Y2 (en) * | 1980-09-19 | 1988-07-27 | ||
US5278104A (en) * | 1989-07-25 | 1994-01-11 | Kabushiki Kaisha Toshiba | Semiconductor wafer carrier having a dust cover |
JPH0770505B2 (en) * | 1989-07-25 | 1995-07-31 | 株式会社東芝 | Semiconductor device support carrier |
US5054519A (en) * | 1990-12-26 | 1991-10-08 | Imtec Products, Inc. | Recirculating chemical bath with inflow and self balancing outflow |
US8309464B2 (en) * | 2008-03-31 | 2012-11-13 | Memc Electronic Materials, Inc. | Methods for etching the edge of a silicon wafer |
EP2359390A1 (en) * | 2008-11-19 | 2011-08-24 | MEMC Electronic Materials, Inc. | Method and system for stripping the edge of a semiconductor wafer |
-
1974
- 1974-12-18 GB GB5470774A patent/GB1483746A/en not_active Expired
- 1974-12-18 BE BE151653A patent/BE823525A/en unknown
- 1974-12-18 JP JP14552574A patent/JPS5093775A/ja active Pending
- 1974-12-18 DE DE19742459892 patent/DE2459892A1/en not_active Withdrawn
- 1974-12-18 CA CA216,323A patent/CA1027465A/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2142283A (en) * | 1983-06-27 | 1985-01-16 | Psi Star Inc | Liquid etching |
GB2313811A (en) * | 1996-06-05 | 1997-12-10 | Samsung Electronics Co Ltd | Wafer overflow etching bath having outlet holes in sidewalls |
GB2313811B (en) * | 1996-06-05 | 2000-09-20 | Samsung Electronics Co Ltd | A chemical bath |
CN113793819A (en) * | 2021-09-16 | 2021-12-14 | 长江存储科技有限责任公司 | Chemical tank and temperature control method thereof |
CN115241330A (en) * | 2022-09-19 | 2022-10-25 | 英利能源发展(天津)有限公司 | Semiconductor silicon wafer device for solar cell etched by hydrofluoric acid |
Also Published As
Publication number | Publication date |
---|---|
DE2459892A1 (en) | 1975-09-04 |
CA1027465A (en) | 1978-03-07 |
JPS5093775A (en) | 1975-07-26 |
BE823525A (en) | 1975-06-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |