WO2010032499A1 - 基板処理装置 - Google Patents

基板処理装置 Download PDF

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Publication number
WO2010032499A1
WO2010032499A1 PCT/JP2009/054141 JP2009054141W WO2010032499A1 WO 2010032499 A1 WO2010032499 A1 WO 2010032499A1 JP 2009054141 W JP2009054141 W JP 2009054141W WO 2010032499 A1 WO2010032499 A1 WO 2010032499A1
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WO
WIPO (PCT)
Prior art keywords
maintenance
setting
command
control means
screen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2009/054141
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English (en)
French (fr)
Japanese (ja)
Inventor
雅子 末吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Publication of WO2010032499A1 publication Critical patent/WO2010032499A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput

Definitions

  • the present invention relates to a substrate processing apparatus composed of a plurality of components for processing a substrate, and more particularly to providing a function for specifying an operation (maintenance command) at the time of maintenance for each component.
  • a substrate processing apparatus is configured as a semiconductor manufacturing apparatus that performs processing steps in a manufacturing method of a semiconductor device (IC).
  • IC semiconductor device
  • a semiconductor manufacturing apparatus that uses a chemical vapor deposition method or the like as a film forming process to form an element on a substrate in a manufacturing process of a semiconductor element is known.
  • the semiconductor manufacturing apparatus is composed of various parts. Components used in semiconductor manufacturing equipment include various sensors (pressure sensors, temperature sensors, etc.), various actuators (process chambers, load lock chambers, robots, aligners, gate valves, etc.) and controllers (overall control controllers, mass flow controllers, etc.) , Robot controller, etc.). Since the semiconductor manufacturing apparatus is composed of such many parts, maintenance work is periodically performed.
  • the maintenance staff who is a user, picks up and implements commands (instructions) for each component used during maintenance, assuming maintenance work.
  • commands that are considered necessary for shortening the maintenance time may not have been implemented.
  • a vacuum gauge which is a kind of sensor
  • the command screen cannot be specified and the open / close operation cannot be performed on the operation screen during normal operation.
  • the operation during maintenance work may not be specified on the operation screen, and maintenance (maintenance) personnel have to manually operate each part directly. Accordingly, since the maintenance work depends on the experience and skill of the maintenance staff, various problems arise. For example, there is safety of maintenance work itself. In addition, depending on the maintenance staff, the time required for the maintenance work increases, resulting in a decrease in operating rate. In addition, if maintenance personnel operate the device without returning it to the normal operation state after the maintenance work is completed, the maintenance operation will be hindered. There was a fear.
  • An object of the present invention is to provide a substrate processing apparatus that solves the problem that parts operation during maintenance, which is a problem of the prior art, cannot be designated from the operation screen, and can cope with parts requiring operation designation during maintenance without changing the program. There is to do.
  • the first feature of the present invention is that operation means having an operation screen for performing various operation instructions or operation settings, and instructions or information set from the operation screen to perform predetermined processing on the substrate.
  • a first control means for receiving the control signal and a second control means for controlling the substrate to perform a predetermined process in accordance with an instruction or setting information transmitted from the first control means.
  • the operation means defines an operation at the time of maintenance of each component when a means for confirming the setting is pressed on a screen for setting an operation at the time of maintenance for each component. It is to notify the first control means of information including the contents set on the screen based on the parameters.
  • a second feature of the present invention is that, in the first feature, when the first means is notified of information including the contents set on the screen, the first means shares the second control means.
  • the information is converted into a memory and output.
  • the third feature of the present invention is that, in the second feature, the second control means detects a change in information held in a memory shared with the first control means. It is to output an instruction to each component.
  • a maintenance operation that is safer than before can be performed by setting a command (maintenance command) for instructing a component operation during maintenance for each component. Also, by parameterizing the contents of maintenance commands, it is possible to respond to maintenance commands requested by maintenance personnel without a program, and parameters including new maintenance commands can be created quickly. is there.
  • FIG. 1 is a schematic configuration diagram of a substrate processing apparatus according to an embodiment of the present invention. It is a block diagram which shows the structure of the controller for control for controlling the substrate processing apparatus which concerns on embodiment of this invention. It is sectional drawing which shows the structure of the processing furnace used for embodiment of this invention. It is a detailed block diagram which shows the controller structure which concerns on embodiment of this invention.
  • the maintenance command monitor screen utilized for embodiment of this invention.
  • the maintenance command setting screen utilized for embodiment of this invention.
  • the operation maintenance parameter utilized for embodiment of this invention.
  • the control maintenance parameter utilized for embodiment of this invention. It is a figure which shows the maintenance command setting sequence in embodiment of this invention. It is a figure which shows the maintenance command command monitor transfer sequence in embodiment of this invention.
  • FIG. 1 shows a schematic configuration example of an in-line type semiconductor manufacturing apparatus which is an example of a substrate processing apparatus according to an embodiment of the present invention.
  • a plurality of wafer transfer robots and process chambers, and two load lock chambers for carrier delivery are connected in parallel and redundant.
  • the semiconductor manufacturing apparatus uses a carrier for transporting a substrate (wafer).
  • an in-line type semiconductor manufacturing apparatus 1 is composed of two channels, and basically includes a plurality of modules (first processing module 2 and second processing module 3) having the following functions. It is configured.
  • the first processing module 2 includes a process chamber PM1 serving as a vacuum-tight substrate processing chamber connected in-line, and a vacuum-tight vacuum lock chamber VL1 serving as a front chamber provided in the preceding stage.
  • the second processing module 3 includes a process chamber PM2 as a vacuum-tight substrate processing chamber connected in-line and a vacuum-tight vacuum lock chamber VL2 as a front chamber provided in the preceding stage.
  • the process chamber PM1 and the vacuum lock chamber VL1 are connected by a gate valve PGV1.
  • the process chamber PM2 and the vacuum lock chamber VL2 are connected by a gate valve PGV2.
  • Vacuum vacuum handlers TH1 and TH2 are provided in the vacuum lock chambers VL1 and VL2, respectively.
  • the vacuum lock chambers VL1 and VL2 are provided with a multi-stage slot having a buffer slot LS in the upper stage and a cooling stage CS in the lower stage.
  • the atmospheric loader LM includes an aligner AU and a loader handler LH.
  • loader doors LD1 and LD2 are provided between the vacuum lock chambers VL1 and VL2 and the atmospheric loader LM.
  • the process chambers PM1 and PM2 have a function of giving added value to the wafer W as a substrate, such as film formation by chemical reaction (for example, CVD).
  • a mechanism suitable for the film formation method such as a gas introduction / exhaust mechanism and a temperature control / plasma discharge mechanism.
  • the vacuum lock chambers VL1 and VL2 are configured to be capable of controlling the vacuum or the atmospheric pressure in the chamber.
  • the vacuum lock chambers VL1 and VL2 are provided with vacuum robot handlers TH1 and TH2 as second substrate transfer devices independently, respectively, between the process chamber PM1 and the vacuum lock chamber VL1, or between the process chamber PM2 and the vacuum chamber handlers VL1 and VL2.
  • the wafer W can be transferred between the vacuum lock chambers VL2.
  • the vacuum lock chambers VL1 and VL2 have a multi-stage type capable of holding the wafer W, for example, two upper and lower stages.
  • the upper buffer stages LS1 and LS2 have a mechanism for holding the wafer W
  • the lower cooling stages CS1 and CS2 have a mechanism for cooling the wafer W.
  • An atmospheric loader LM as an atmospheric transfer chamber connected to the vacuum lock chambers VL1 and VL2 is a robot (that is, a loader handler LH) that can carry wafers into and out of the load lock chambers (that is, vacuum lock chambers VL1 and VL2). ).
  • the atmospheric loader LM and the vacuum lock chamber VL1 are connected by a load door LD1 (gate valve).
  • the atmospheric loader LM and the vacuum lock chamber VL2 are connected by a load door LD2 (gate valve).
  • two load ports LP1 and LP2 are provided as substrate storage units.
  • the atmospheric loader LM is provided with one loader handler LH, which can transfer the wafer W not only to the vacuum lock chambers VL1 and VL2 but also to the load ports LP1 and LP2.
  • the atmospheric loader LM is provided with an aligner unit AU as a substrate position correction device, and it is possible to correct the deviation of the wafer W during transfer and perform notch alignment (hereinafter referred to as alignment) that aligns the notch in a certain direction. It has become.
  • the load ports LP1 and LP2 are configured so that carriers CR1 and CR2 that can hold a plurality of wafers W can be delivered to the outside of the semiconductor manufacturing apparatus. Further, at least the carrier ID can be read / written.
  • the cooling mechanism of VL1 and VL2 is controlled by a control controller (not shown).
  • a set of process chamber PM1 and a set of vacuum lock chamber VL1 are paired, a set of process chamber PM2 and a set of vacuum lock chamber VL2 are set as another pair, Connect the line to the atmospheric loader LM.
  • FIG. 2 is a block diagram showing a configuration of a control controller 11 for controlling the semiconductor manufacturing apparatus 1 shown in FIG.
  • the control controller 11 includes a main controller 12, an overall control controller 13, a process chamber controller PMC (1) 14, and a PMC (2) 15 connected via a LAN circuit 16.
  • the overall controller 13 is connected to a VL robot controller 13a, an atmospheric robot controller 13b, a mass flow controller MFC 13c, and the like.
  • the process chamber controller PMC (1) 14 is connected to a mass flow controller MFC 14a, APC 14b, temperature controller 14c, valve I / O 14d, and the like.
  • the MFC 14a is a mass flow controller for controlling the gas flow rate
  • the APC 14b is an auto pressure controller for controlling the pressure in the process chamber PM.
  • the temperature controller 14c controls the temperature in the process chamber PM
  • the valve I / O 14d is an input / output port for controlling ON / OFF of a gas or exhaust valve.
  • the PMC (2) 15 has the same configuration as the PMC (1) 14.
  • the storage unit 18 is connected to the LAN line 16 and stores instruction data and setting data input via a screen displayed on the main controller 12.
  • the storage unit 18 stores various recipes (process recipes, dummy substrate recipes, and the like).
  • the storage unit 18 is separate from the main controller 12 in the present invention, but may be configured as an integral unit.
  • the main controller 12 has functions for displaying screens such as system control command instructions, monitor display, logging data, alarm analysis, and parameter editing.
  • the overall controller 13 also performs operation control of the entire system, control of the VL robot controller 13a, control of the atmospheric robot controller 13b, and VL exhaust system control for controlling the MFC 13c, valves, pumps, and the like.
  • the overall controller 13 instructs the atmospheric robot controller 13b to perform a wafer transfer instruction.
  • the corresponding wafer W is transferred from the carrier to the buffer slot LS of the vacuum lock chamber VL and then transferred to the buffer slot LS of the vacuum lock chamber VL, exhaust control of the vacuum lock chamber VL (that is, control of pumps and valves) ).
  • the vacuum lock chamber VL reaches a predetermined negative pressure
  • the wafer W is added to the corresponding PMC (that is, PMC (1) 14 or PMC (2) 15) to add value to the wafer W. Instruct the execution of the recipe.
  • FIG. 3 shows a plasma processing apparatus 100 used as at least one of the process chambers PM1 and PM2.
  • the plasma processing apparatus 100 includes a vacuum vessel 104 that forms a processing chamber 102.
  • a wafer loading / unloading port 106 for loading / unloading a wafer W as a substrate to be processed into / from the processing chamber is opened on the side wall of the vacuum chamber 104, and the wafer loading / unloading port 106 is opened and closed by a gate valve 108. It is configured.
  • An exhaust line 110 is connected to the bottom wall of the vacuum vessel 104, and the other end of the exhaust line 110 is connected to a vacuum exhaust device 111 as vacuum exhaust means.
  • An exhaust conductance adjusting valve 112 as an exhaust conductance adjusting means is interposed in the middle of the exhaust line 110.
  • An exhaust conductance adjustment valve control device 114 is electrically connected to the exhaust conductance adjustment valve 112.
  • the exhaust conductance adjustment valve 112 has a pressure for detecting the pressure in the processing chamber 102.
  • the sensor 116 is electrically connected.
  • the exhaust conductance adjustment valve control device 114 is configured to adjust the pressure in the processing chamber 102 by controlling the exhaust conductance adjustment valve 112 based on the detection result from the pressure sensor 116 and the command from the controller 118. Yes.
  • the controller 118 corresponds to the PMC (1) 14 (or PMC (2)) in FIG.
  • An anode electrode (anode) 120 is installed in the processing chamber 102 of the vacuum vessel 104.
  • a gas passage 124 is formed inside the anode electrode 120, and a shower plate 122 is fitted on the lower surface of the anode electrode 120 so as to partition the gas passage 124.
  • a large number of air outlets 126 are formed in the shower plate 122 so as to blow out gas in a shower shape.
  • a gas introduction line 128 serving as a gas introduction means is connected to the gas passage 124 of the anode electrode 120, and various types of gases are introduced into the gas passage 124 from the gas introduction line 128.
  • a cathode electrode (cathode) 130 is installed below the processing chamber 102 of the vacuum vessel 104.
  • the cathode electrode 130 is configured to also serve as a substrate mounting table (susceptor) that holds the wafer W in a state where the wafer W is placed.
  • the cathode electrode 130 also serves as a susceptor (not shown). ) Is built-in.
  • a high-frequency oscillator 132 as a high-frequency power supply means is connected between the anode electrode 120 and the cathode electrode 130 via an impedance matching unit 134.
  • the high-frequency oscillator 132 is connected to the above-mentioned PMC (1) 14 (or PMC ( 2) It is connected to a controller 118 corresponding to 15) via a communication line 136.
  • the high frequency oscillator 132 is adapted to apply a high frequency voltage between the anode electrode 120 and the cathode electrode 130 via the impedance matching unit 134 in response to a command from the controller 118.
  • a voltmeter 138 as a self-bias voltage detection means is connected to the cathode electrode 130, and the voltmeter 138 is configured to transmit a detection result to the controller 118 through the communication line 140.
  • a storage device 142, a display device 144 and an input device 146 are connected to the controller 118.
  • the storage unit 18 and the main controller 12 may be used instead of the storage device 142, the display device 144, and the input device 146, respectively.
  • the controller 118 incorporates a function of managing the traveling wave electric energy and the accumulated self-bias voltage as software functions. For this reason, the controller 118 is configured to acquire the traveling wave power value from the high frequency oscillator 132 via the communication line 136 as data related to the plasma processing and store it in the storage device 142. Further, the controller 118 is configured to acquire a self-bias voltage value as data related to plasma processing from the voltmeter 138 via the communication line 140 and store it in the storage device 142.
  • the gate valve 108 is opened, and the wafer W is loaded into the processing chamber 102 from the wafer loading / unloading port 106, and the cathode electrode also serving as a susceptor. 130.
  • the wafer loading / unloading port 106 is closed by the gate valve 108.
  • the inside of the processing chamber 102 is exhausted by the vacuum exhaust device 111 through the exhaust line 110 and the exhaust conductance adjustment valve 112.
  • the raw material gas is introduced into the gas passage 124 from the gas introduction line 128 and blown into the processing chamber 102 from the outlet 126 of the shower plate 122 in a shower shape.
  • a feedback control method in which the exhaust conductance adjusting valve 112 is controlled based on a signal output from the pressure sensor 116 and input to the exhaust conductance adjusting valve control device 114. Is used.
  • the power value set in the controller 118 from the input device 146 is set in the high frequency oscillator 132 through the communication line 136, and the high frequency power is generated by the high frequency oscillator 132.
  • the high frequency power generated by the high frequency oscillator 132 is applied to the anode electrode 120 through the impedance matching unit 134. When high frequency power is applied, plasma is generated between the anode electrode 120 and the cathode electrode 130.
  • the plasma generated in this manner decomposes or activates the raw material gas blown into the processing chamber 102 in a shower shape, and deposits it on the wafer W held by the cathode electrode 130 that also serves as a susceptor, thereby forming a film. Is done.
  • the main controller 12 is configured to include at least an operation unit 19 as an operation unit and a control unit 20 as a first control unit.
  • a component controller 21 for inputting various data from various sensors and various actuators to the control unit 20 is used as a second control means, and a pressure gauge, a thermometer, a pump, etc. are connected to the component controller 21 via a LAN or cable wiring. Connected to the output section.
  • the component controller 21 corresponds to the PMC 14 (or 15) shown in FIG. 2 and the controller 118 shown in FIG.
  • the operation unit 19 includes an operation screen as a display unit and performs monitor display. Also, various commands are received by an input means (not shown). Various commands can be set on the operation screen.
  • the control unit 20 includes a component controller 21 and a shared memory, and controls each component. Further, an error of each component is detected, and error information (data) is transmitted to the operation unit 19.
  • the component controller 21 inputs and outputs data with each component.
  • the operation unit 19 is also configured to display a maintenance command monitor screen for checking the operation at the time of maintenance for each component and a maintenance setting screen for setting the operation at the time of maintenance for each component. Yes. Further, the operation unit 19 and the control unit 20 include parameters that define various operations of each component.
  • the name, status, and description are set as items.
  • the name of each maintenance command, the status at the time of maintenance, for example, the condition for performing maintenance (maintenance threshold, etc.), A description of the means for shifting to the state and the content of the condition is displayed.
  • the maintenance command is selected by clicking the radio button, and the maintenance command setting screen shown in FIG. 6 is displayed when the setting button is pressed.
  • the operation setting during maintenance shown in FIG. 5 is set.
  • the state can be set by selecting “maintenance” and “non-maintenance” with the radio buttons.
  • “Maintenance” is set, the valve related to the vacuum gauge, which is an automatic open / close control valve, is changed to a forced open / close control valve.
  • “non-maintenance” is set, the forced open / close control valve changes to the automatic open / close control valve in the normal mode.
  • the name of the maintenance command is “lid opening / closing chamber temperature”
  • the temperature can be set by inputting a set value. Similarly, the setting is confirmed by pressing the transmission button.
  • the operation unit 19 includes operation maintenance parameters shown in FIG. 7 used when displaying the maintenance command monitor screen shown in FIG. 5 and the maintenance command setting screen shown in FIG.
  • the operation maintenance parameter has a variable part of the maintenance command as a parameter.
  • the operation maintenance parameter is read when the program starts up and is used when the screen is displayed or data is transmitted.
  • the parameters of the operation maintenance parameter name column and description column are displayed in the name item and description item of the maintenance command monitor screen shown in FIG.
  • the Type column of the operation unit parameter is Bit
  • the command monitor is “0”, the bit off-time name column, and if “1”, the bit on-time name column.
  • the parameter is displayed.
  • the Type column is Word, the numerical value of the monitor is displayed.
  • the operation maintenance parameter name column and description column parameter are displayed in the name item and description item of the maintenance command setting screen shown in FIG.
  • a command selection button for example, a radio button or the like
  • a value can be set.
  • the control maintenance parameter shown in FIG. 8 is stored in the control unit 20.
  • the control maintenance parameter also holds the variable part of the maintenance command as a parameter, and the IOID used as an identifier uniquely determined between the display unit and the control unit and the IO used as an identifier between the control unit and the component controller It consists of a set of memory addresses.
  • the main menu performs a predetermined operation from the screen and displays the maintenance command monitor screen shown in FIG.
  • the target maintenance command is selected with the command selection button, and the setting button is pressed to switch to the maintenance command setting screen shown in FIG.
  • the type of the maintenance command is Bit
  • the target maintenance command state is selected as shown in FIG. 6A, and the setting button is pressed.
  • the maintenance command Type is Word
  • a numerical value is input to the setting field as shown in FIG. 6B, and the setting button is pressed.
  • the numerical value input may be performed by displaying a soft numeric keypad, for example, but is not particularly limited.
  • FIG. 9 shows a maintenance setting sequence in this embodiment.
  • the maintenance command setting sequence is started by pressing the transmission button on the maintenance setting screen of FIG.
  • the operation maintenance parameter is searched from the command name (command No.) selected on the maintenance setting screen of FIG. 6, the IOID is acquired, and a maintenance command setting message is created and transmitted.
  • the control unit 20 retrieves the control maintenance parameter from the IOID of the maintenance command setting message, acquires the address of the shared memory, and sets the address value.
  • the component controller 21 maps Value areas corresponding to the commands 1 to n in its shared memory. Therefore, since changes are detected by scanning at regular time intervals (system cycle times), it is possible to detect changes in increase / decrease (addition, deletion, etc.) of commands.
  • FIG. 10 shows a maintenance command monitor transfer sequence in this embodiment.
  • the parts controller 21 writes output information from parts such as valves in the shared memory at regular intervals.
  • a maintenance command monitor message is created by searching for the IOID of the control maintenance parameter at regular intervals, referring to data at the address of the shared memory, and transmitted to the display unit of the operation unit 19 of the main controller 12.
  • the wafer W is damaged in the chamber and the lid of the chamber is opened and closed in order to collect fragments of the wafer W will be specifically described.
  • Atmospheric pressure is used to open and close the lid in the chamber.
  • the temperature it is necessary to set the temperature to be lower than the settable temperature (for example, 50 ° C.).
  • the set temperature of the lid openable / closable chamber temperature (chamber lid openable temperature change command) is changed to 80 ° C.
  • the maintenance worker opens the chamber lid, collects the damaged wafer W, and closes the chamber lid.
  • the chamber lid opening / closing temperature setting is returned to 50 ° C. by a chamber lid opening / closing temperature change command.
  • the number of maintenance commands is three.
  • the command No Since the number of maintenance commands can be increased or decreased by adding or deleting, the number of maintenance commands can be changed without a program. Therefore, it becomes easy to adapt to various maintenance operations.
  • the setting for normal operation and the setting for maintenance can be individually set, the maintenance worker can perform the maintenance work with peace of mind, and thus the work spent on the maintenance. Can be shortened.
  • the maintenance command setting screen is provided, the maintenance operation can be performed safely and simplified by performing a simple operation of setting on the operation screen.

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  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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PCT/JP2009/054141 2008-09-18 2009-03-05 基板処理装置 Ceased WO2010032499A1 (ja)

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JP2008-238826 2008-09-18

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JP5841336B2 (ja) * 2011-02-08 2016-01-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および情報管理方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
JPH08161007A (ja) * 1994-12-09 1996-06-21 Canon Inc 制御装置
JPH09232200A (ja) * 1996-02-21 1997-09-05 Kokusai Electric Co Ltd 半導体製造装置及びその制御方法
JP2007180582A (ja) * 2007-03-16 2007-07-12 Hitachi Kokusai Electric Inc 半導体製造装置
JP2008147631A (ja) * 2006-11-17 2008-06-26 Hitachi Kokusai Electric Inc 基板処理装置

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Publication number Priority date Publication date Assignee Title
JP4024888B2 (ja) * 1996-10-17 2007-12-19 株式会社日立国際電気 半導体製造装置の制御装置
JP4355193B2 (ja) * 2003-11-10 2009-10-28 株式会社ルネサステクノロジ 半導体デバイスの製造方法及び半導体デバイス製造システム
JP4513102B2 (ja) * 2006-02-06 2010-07-28 東京エレクトロン株式会社 処理装置における処理器具の交換方法及び交換用プログラム
JP2007329345A (ja) * 2006-06-08 2007-12-20 Hitachi Kokusai Electric Inc 基板処理装置
JP4616798B2 (ja) * 2006-06-12 2011-01-19 株式会社日立国際電気 基板処理装置及び基板処理装置の表示方法
JP5142353B2 (ja) * 2006-09-29 2013-02-13 株式会社日立国際電気 基板処理装置、基板処理装置の異常検出方法、基板処理システム、基板処理装置の異常検出プログラム及び半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08161007A (ja) * 1994-12-09 1996-06-21 Canon Inc 制御装置
JPH09232200A (ja) * 1996-02-21 1997-09-05 Kokusai Electric Co Ltd 半導体製造装置及びその制御方法
JP2008147631A (ja) * 2006-11-17 2008-06-26 Hitachi Kokusai Electric Inc 基板処理装置
JP2007180582A (ja) * 2007-03-16 2007-07-12 Hitachi Kokusai Electric Inc 半導体製造装置

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