WO2009150087A3 - Systemträger für elektronische komponente und verfahren für dessen herstellung - Google Patents

Systemträger für elektronische komponente und verfahren für dessen herstellung Download PDF

Info

Publication number
WO2009150087A3
WO2009150087A3 PCT/EP2009/056832 EP2009056832W WO2009150087A3 WO 2009150087 A3 WO2009150087 A3 WO 2009150087A3 EP 2009056832 W EP2009056832 W EP 2009056832W WO 2009150087 A3 WO2009150087 A3 WO 2009150087A3
Authority
WO
WIPO (PCT)
Prior art keywords
production
electronic components
system support
chip
support
Prior art date
Application number
PCT/EP2009/056832
Other languages
English (en)
French (fr)
Other versions
WO2009150087A2 (de
Inventor
Wolfgang Pahl
Karl Weidner
Original Assignee
Epcos Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos Ag filed Critical Epcos Ag
Priority to JP2011512936A priority Critical patent/JP2011523068A/ja
Priority to US12/996,738 priority patent/US9331010B2/en
Publication of WO2009150087A2 publication Critical patent/WO2009150087A2/de
Publication of WO2009150087A3 publication Critical patent/WO2009150087A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
    • B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/07—Interconnects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2405—Shape
    • H01L2224/24051—Conformal with the semiconductor or solid-state device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2499—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids
    • H01L2224/24996—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/24998—Reinforcing structures, e.g. ramp-like support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/76—Apparatus for connecting with build-up interconnects
    • H01L2224/7615—Means for depositing
    • H01L2224/76151—Means for direct writing
    • H01L2224/76155—Jetting means, e.g. ink jet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/82007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting a build-up interconnect during or after the bonding process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/821—Forming a build-up interconnect
    • H01L2224/82101—Forming a build-up interconnect by additive methods, e.g. direct writing
    • H01L2224/82102—Forming a build-up interconnect by additive methods, e.g. direct writing using jetting, e.g. ink jet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5387—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1433—Application-specific integrated circuit [ASIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

Ein Chip (2, 3) wird über einer Oberseite eines flexiblen Trägers (1) angeordnet und von dem Träger mechanisch entkoppelt. Elektrische Verbindungen (8, 11) des Chips sind in einer planaren Verbindungstechnik ausgeführt. Der Chip kann vom Träger durch einen Luftspalt oder eine Grundschicht (7) aus einem weichen oder kompressiblen Material getrennt sein.
PCT/EP2009/056832 2008-06-13 2009-06-03 Systemträger für elektronische komponente und verfahren für dessen herstellung WO2009150087A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011512936A JP2011523068A (ja) 2008-06-13 2009-06-03 電子要素のシステムサポート及びその製造方法
US12/996,738 US9331010B2 (en) 2008-06-13 2009-06-03 System support for electronic components and method for production thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008028299A DE102008028299B3 (de) 2008-06-13 2008-06-13 Systemträger für elektronische Komponente und Verfahren für dessen Herstellung
DE102008028299.5 2008-06-13

Publications (2)

Publication Number Publication Date
WO2009150087A2 WO2009150087A2 (de) 2009-12-17
WO2009150087A3 true WO2009150087A3 (de) 2010-03-18

Family

ID=40794720

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/056832 WO2009150087A2 (de) 2008-06-13 2009-06-03 Systemträger für elektronische komponente und verfahren für dessen herstellung

Country Status (4)

Country Link
US (1) US9331010B2 (de)
JP (1) JP2011523068A (de)
DE (1) DE102008028299B3 (de)
WO (1) WO2009150087A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8542850B2 (en) * 2007-09-12 2013-09-24 Epcos Pte Ltd Miniature microphone assembly with hydrophobic surface coating
DE102007058951B4 (de) * 2007-12-07 2020-03-26 Snaptrack, Inc. MEMS Package
DE102010006132B4 (de) 2010-01-29 2013-05-08 Epcos Ag Miniaturisiertes elektrisches Bauelement mit einem Stapel aus einem MEMS und einem ASIC
KR101633373B1 (ko) * 2012-01-09 2016-06-24 삼성전자 주식회사 Ｃｏｆ 패키지 및 이를 포함하는 반도체 장치
DE102013217349A1 (de) * 2013-08-30 2015-03-05 Robert Bosch Gmbh Mikromechanische Sensoranordnung und entsprechendes Herstellungsverfahren
DE102013222307A1 (de) * 2013-11-04 2015-05-07 Robert Bosch Gmbh Mikroelektromechanische Sensoranordnung und Verfahren zum Herstellen einer mikroelektromechanischen Sensoranordnung
DE102014210006A1 (de) * 2014-02-18 2015-08-20 Robert Bosch Gmbh Sensoreinheit und Verfahren zur Herstellung einer Sensoreinheit
KR20180065426A (ko) * 2016-12-07 2018-06-18 삼성전자주식회사 반도체 저장 장치
US10098224B1 (en) * 2017-09-29 2018-10-09 Apple Inc. Reinforcement components for electrical connections with limited accessibility and systems and methods for making the same
CN113387319B (zh) * 2021-06-11 2023-07-14 中国兵器工业集团第二一四研究所苏州研发中心 基于多通孔硅基板的mems芯片封装结构及其制备方法
CN114093770A (zh) 2021-10-27 2022-02-25 珠海越亚半导体股份有限公司 埋嵌封装结构及其制作方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999018609A1 (en) * 1997-10-08 1999-04-15 Minnesota Mining And Manufacturing Company Chip scale ball grid array for integrated circuit package
DE202005001559U1 (de) * 2005-01-31 2005-05-19 Microelectronic Packaging Dresden Gmbh Chipaufbau für stressempfindliche Chips
US20050103105A1 (en) * 2003-10-13 2005-05-19 Harald Emmerich Acceleration sensor system
US20050189635A1 (en) * 2004-03-01 2005-09-01 Tessera, Inc. Packaged acoustic and electromagnetic transducer chips
DE102004015597A1 (de) * 2004-03-30 2005-11-03 Infineon Technologies Ag Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
US20070190290A1 (en) * 2003-11-17 2007-08-16 Ewald Gunther Economical minaturized assembly and connection technology for leds and other optoelectronic modules
EP1837303A1 (de) * 2006-03-24 2007-09-26 Infineon Technologies SensoNor AS Integrierter Sockel für eine MEMS-Struktur
WO2008023465A1 (en) * 2006-08-25 2008-02-28 Kyocera Corporation Microelectronic machine mechanism device, and its manufacturing method
EP2112471A1 (de) * 2008-04-22 2009-10-28 Microcomponents AG Montagevorrichtung für elektronisches Bauteil

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1837303U (de) 1961-06-06 1961-09-07 Hermann Rahmer Messlatte.
US4661433A (en) 1984-12-31 1987-04-28 General Electric Company Storage stable aryl nitrone compositions
US4887147A (en) * 1987-07-01 1989-12-12 Digital Equipment Corporation Thermal package for electronic components
JPH02172246A (ja) * 1988-12-23 1990-07-03 Nec Kansai Ltd 半導体装置
JPH03268339A (ja) * 1990-03-16 1991-11-29 Yokogawa Electric Corp 半導体センサ
JPH0495740A (ja) * 1990-08-06 1992-03-27 Toyota Autom Loom Works Ltd 半導体装置
EP0520675A3 (en) 1991-06-28 1993-03-17 Sgs-Thomson Microelectronics, Inc. Flushable delay line
JPH05340962A (ja) * 1992-06-10 1993-12-24 Omron Corp 静電容量型加速度センサ
CN2158212Y (zh) 1993-03-16 1994-03-09 林柏青 悬挂式活动卧床
JP2974552B2 (ja) * 1993-06-14 1999-11-10 株式会社東芝 半導体装置
JP3117581B2 (ja) * 1993-06-30 2000-12-18 三洋電機株式会社 半導体加速度センサの製造方法
JP2729459B2 (ja) 1993-10-15 1998-03-18 株式会社マツモト 長葱の根切り機
US5834339A (en) * 1996-03-07 1998-11-10 Tessera, Inc. Methods for providing void-free layers for semiconductor assemblies
JPH088444A (ja) * 1994-06-22 1996-01-12 Toyota Motor Corp 半導体装置及びその製造方法
JPH0997870A (ja) * 1995-09-29 1997-04-08 S I I R D Center:Kk 電子装置及びその製造方法
JPH1062444A (ja) * 1996-08-20 1998-03-06 Hitachi Ltd 加速度センサ及びコントロールユニット及び車両の乗員保護システム
JPH10135614A (ja) * 1996-10-31 1998-05-22 Sony Corp 電子部品の実装方法
JP4029453B2 (ja) 1998-01-27 2008-01-09 松下電工株式会社 半導体加速度センサ
DE29823791U1 (de) * 1998-08-05 1999-11-18 Siemens Ag Strahlungsempfindlicher Wandler
JP2000304764A (ja) * 1999-04-20 2000-11-02 Denso Corp 半導体力学量センサ及びその製造方法
JP4254016B2 (ja) 2000-05-17 2009-04-15 株式会社デンソー 角速度センサ及びその製造方法
JP2002098709A (ja) * 2000-09-26 2002-04-05 Matsushita Electric Works Ltd 半導体加速度センサ
EP1430524A2 (de) 2001-09-28 2004-06-23 Siemens Aktiengesellschaft Verfahren zum kontaktieren elektrischer kontaktflächen eines substrats und vorrichtung aus einem substrat mit elektrischen kontaktflächen
JP3826875B2 (ja) 2002-10-29 2006-09-27 セイコーエプソン株式会社 圧電デバイスおよびその製造方法
DE10314172B4 (de) 2003-03-28 2006-11-30 Infineon Technologies Ag Verfahren zum Betreiben einer Anordnung aus einem elektrischen Bauelement auf einem Substrat und Verfahren zum Herstellen der Anordnung
JP2005011837A (ja) * 2003-06-16 2005-01-13 Nippon Micron Kk 半導体装置用基板、半導体装置およびその製造方法
DE102004009296B4 (de) 2004-02-26 2011-01-27 Siemens Ag Verfahren zum Herstellen einer Anordnung eines elektrischen Bauelements
JP2005243930A (ja) * 2004-02-26 2005-09-08 Alps Electric Co Ltd フレキシブルプリント配線基板
JP2005322878A (ja) 2004-04-09 2005-11-17 Dainippon Printing Co Ltd 印刷配線基板の組付パネル、印刷配線基板の実装用単位シート、リジッド−フレキシブル基板及びこれらの製造方法
JP5006035B2 (ja) 2004-06-11 2012-08-22 イビデン株式会社 フレックスリジッド配線板とその製造方法
JP4831949B2 (ja) * 2004-09-08 2011-12-07 株式会社デンソー 物理量センサ装置
DE102005002987A1 (de) 2005-01-21 2006-07-27 Siemens Ag Leiterbahnstruktur zur Minimierung von thermomechanischen Belastungen
DE102005006638B4 (de) 2005-02-14 2009-01-02 Siemens Ag Haftfeste Leiterbahn auf Isolationsschicht
JP2006300905A (ja) * 2005-04-25 2006-11-02 Matsushita Electric Works Ltd 加速度センサおよびその製造方法
JP5245052B2 (ja) * 2005-05-27 2013-07-24 富山県 ハイブリッドセンサ部品
JP4566066B2 (ja) * 2005-05-31 2010-10-20 三洋電機株式会社 回路装置およびその製造方法
JP2007043017A (ja) * 2005-08-05 2007-02-15 Murata Mfg Co Ltd 半導体センサ装置
JP2007047023A (ja) * 2005-08-10 2007-02-22 Seiko Instruments Inc 半導体装置及び半導体パッケージ並びに半導体装置の製造方法
JP4595779B2 (ja) * 2005-10-12 2010-12-08 株式会社デンソー 角速度センサ
DE102005050398A1 (de) 2005-10-20 2007-04-26 Epcos Ag Gehäuse mit Hohlraum für ein mechanisch empfindliches elektronisches Bauelement und Verfahren zur Herstellung
JP4455488B2 (ja) * 2005-12-19 2010-04-21 三菱電機株式会社 半導体装置
JP4786328B2 (ja) * 2005-12-20 2011-10-05 Ｏｋｉセミコンダクタ株式会社 半導体パッケージ
JP2007322191A (ja) * 2006-05-31 2007-12-13 Oki Electric Ind Co Ltd 半導体加速度センサ
JP4997875B2 (ja) * 2006-08-23 2012-08-08 株式会社デンソー センサ装置およびその製造方法
JP2008070230A (ja) * 2006-09-14 2008-03-27 Hitachi Ltd 物理量検出装置
JP4998689B2 (ja) 2006-09-30 2012-08-15 日本ケミコン株式会社 光学機器モジュール
JP4893238B2 (ja) * 2006-10-31 2012-03-07 株式会社デンソー 圧力センサ
DE102007010711B4 (de) * 2007-02-28 2018-07-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schaltanordnung, Messvorrichtung damit und Verfahren zu deren Herstellung

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999018609A1 (en) * 1997-10-08 1999-04-15 Minnesota Mining And Manufacturing Company Chip scale ball grid array for integrated circuit package
US20050103105A1 (en) * 2003-10-13 2005-05-19 Harald Emmerich Acceleration sensor system
US20070190290A1 (en) * 2003-11-17 2007-08-16 Ewald Gunther Economical minaturized assembly and connection technology for leds and other optoelectronic modules
US20050189635A1 (en) * 2004-03-01 2005-09-01 Tessera, Inc. Packaged acoustic and electromagnetic transducer chips
DE102004015597A1 (de) * 2004-03-30 2005-11-03 Infineon Technologies Ag Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
DE202005001559U1 (de) * 2005-01-31 2005-05-19 Microelectronic Packaging Dresden Gmbh Chipaufbau für stressempfindliche Chips
EP1837303A1 (de) * 2006-03-24 2007-09-26 Infineon Technologies SensoNor AS Integrierter Sockel für eine MEMS-Struktur
WO2008023465A1 (en) * 2006-08-25 2008-02-28 Kyocera Corporation Microelectronic machine mechanism device, and its manufacturing method
US20090261691A1 (en) * 2006-08-25 2009-10-22 Kyocera Corporation Microelectromechanical device and method for manufacturing the same
EP2112471A1 (de) * 2008-04-22 2009-10-28 Microcomponents AG Montagevorrichtung für elektronisches Bauteil

Also Published As

Publication number Publication date
US20110133315A1 (en) 2011-06-09
JP2011523068A (ja) 2011-08-04
DE102008028299B3 (de) 2009-07-30
US9331010B2 (en) 2016-05-03
WO2009150087A2 (de) 2009-12-17

Similar Documents

Publication Publication Date Title
WO2009150087A3 (de) Systemträger für elektronische komponente und verfahren für dessen herstellung
WO2008126064A3 (en) A fluid separation structure and a method of manufacturing a fluid separation structure
TW200713656A (en) Method for fabricating a device eith flexible substrate and method for stripping flexible-substrate
MY177316A (en) Transponder and booklet
EP2441530A3 (de) Elektromechanischer Wandler und Herstellungsverfahren dafür
TWI315553B (en) Flexible printed wiring board, method for fabricating flexible printed wiring board, and semiconductor device
SG152101A1 (en) An interconnect structure and a method of fabricating the same
EP2704216A3 (de) Flexible Halbleiterbauelemente und Verfahren zu ihrer Herstellung
ATE557576T1 (de) Leiterplatine mit elektronischem bauelement
EP2596948A3 (de) Verfahren zum Herstellen einer Halbleitervorrichtung
EP1895602A3 (de) Beleuchtungsgerät mit mehreren lichtemittierenden Halbleiterbauelementen
EP2014366A3 (de) Mikrofluidischer Chip und Herstellungsverfahren dafür
EP2161765A3 (de) Optisches Halbleiterbauelement und Verfahren zu seiner Herstellung
TW200629618A (en) Electronic devices and processes for forming electronic devices
WO2008063337A3 (en) Semiconductor-on-diamond devices and associated methods
EP2560205A3 (de) Lichtemittierendes Modul
TW200638145A (en) Display apparatus and method of manufacturing the same
TW200644104A (en) Manufacturing method for electronic component, electronic component, and electronic equipment
WO2009143026A3 (en) Method of forming an electronic device using a separation technique
HK1139506A1 (en) Electric device, connecting method and adhesive film
WO2007119200A3 (en) An electro-optic device and a method for producing the same
EP2680330A3 (de) Mit einer Einkapselungsschicht überzogenes Halbleiterelement, Herstellungsverfahren dafür und Halbleitervorrichtung
TW200715621A (en) Procedure for producing a semiconductor component with a planner contact and the semiconductor component
TW200746456A (en) Nitride-based semiconductor device and production method thereof
EP2015325A3 (de) Poröse Halbleiterschicht auf einem Substrat

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09761650

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2011512936

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12996738

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 09761650

Country of ref document: EP

Kind code of ref document: A2