WO2009145308A1 - Dispositif semi-conducteur, circuit de récupération d'élément, et procédé de récupération d'élément - Google Patents

Dispositif semi-conducteur, circuit de récupération d'élément, et procédé de récupération d'élément Download PDF

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Publication number
WO2009145308A1
WO2009145308A1 PCT/JP2009/059882 JP2009059882W WO2009145308A1 WO 2009145308 A1 WO2009145308 A1 WO 2009145308A1 JP 2009059882 W JP2009059882 W JP 2009059882W WO 2009145308 A1 WO2009145308 A1 WO 2009145308A1
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voltage pulse
resistance
resistance state
input
voltage
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PCT/JP2009/059882
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English (en)
Japanese (ja)
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潤 砂村
仁彦 伊藤
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日本電気株式会社
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Priority to JP2010514559A priority Critical patent/JPWO2009145308A1/ja
Publication of WO2009145308A1 publication Critical patent/WO2009145308A1/fr

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/34—Material includes an oxide or a nitride
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Definitions

  • the present invention relates to a semiconductor device having a variable resistance element, an element regeneration circuit, and an element regeneration method that can switch an electric resistance in a film between a low resistance state and a high resistance state by applying a voltage to an electrode.
  • nonvolatile memories As rewritable semiconductor memory devices, the demand for nonvolatile memories as rewritable semiconductor memory devices has increased.
  • flash memory which is a typical example of nonvolatile memory
  • the one using a floating gate is the mainstream, but it is said that it is difficult to thin the tunnel gate oxide film, and it is approaching the limit of miniaturization.
  • a memory using a resistance variable element has been proposed as a nonvolatile memory that breaks down the miniaturization limit of a flash memory. These are expected as general-purpose memories that operate at high speed as well as conventional nonvolatile memories.
  • Memory using resistance change elements includes magnetic RAM (MRAM), phase change RAM (PRAM), resistive RAM (ReRAM), and programmable metallization cell (PMC). Each of these has a unique rewrite condition, resistance change rate, and number of rewrites, but those having a high resistance change rate defined by the resistance ratio between the low resistance state and the high resistance state are ReRAM and PMC. A higher read margin can be expected.
  • MRAM magnetic RAM
  • PRAM phase change RAM
  • ReRAM resistive RAM
  • PMC programmable metallization cell
  • the switching operation from the high resistance state to the low resistance state is often referred to as a set operation, and the switching operation from the low resistance state to the high resistance state is often referred to as a reset operation.
  • the switching operation from the high resistance state to the low resistance state is defined as a set operation, and the switching operation from the low resistance state to the high resistance state is defined as a reset operation.
  • PMC uses ionic conduction and electrochemical reaction during the set / reset operation, so that voltages having different polarities are applied to the resistance change element in the set operation and the reset operation.
  • ReRAM set / reset operation there are reported examples of using different polar voltages for the set / reset operation as in the PMC and performing the same polarity (or unipolar) voltage application. .
  • Patent Document 1 An example of ReRAM using a perovskite material is disclosed in US Pat. No. 6,204,139 (hereinafter referred to as Patent Document 1).
  • Patent Document 1 An example of ReRAM using a perovskite material is disclosed in US Pat. No. 6,204,139 (hereinafter referred to as Patent Document 1).
  • Patent Document 2 Japanese Patent Application Laid-Open No. 2004-363604
  • Patent Document 3 Japanese Patent Application Laid-Open No. 2006-279042
  • a semiconductor memory device 100 shown in FIG. 1 includes a MOS (Metal Oxide Semiconductor) transistor 101 and a resistance change element 102.
  • the MOS transistor 101 has a source electrode 111, a drain electrode 112, and a gate electrode 114. Impurity diffusion layers to be the source electrode 111 and the drain electrode 112 are formed on the surface of the semiconductor silicon substrate 110, and a gate insulating film 113 typified by a silicon oxide film is formed on the silicon substrate 110, typified by polysilicon.
  • a gate electrode 114 is formed on the gate insulating film 113.
  • the resistance change element 102 includes two electrodes 115 and 116 and a variable resistor 117 sandwiched between these two electrodes.
  • the electrode 115 is connected to the drain electrode 112 of the MOS transistor 101, and the electrode 116 is connected to a wiring 118 provided in the upper layer.
  • V SW the voltage applied between the two electrodes 115 and 116 of the resistance change element 102 is denoted as V SW .
  • a voltage higher than V SW is applied between the source electrode 111 and the wiring 118, and the MOS transistor 101 is turned on from the off state.
  • a voltage that is equal to or higher than a threshold voltage to be in a state may be applied to the gate electrode 114.
  • the relationship between the voltage V SW applied to the resistance change element 102 and the current flowing through the resistance change element 102 is the relationship shown in the graph of FIG.
  • variable resistance element 102 When the variable resistance element 102 is in the low resistance state, that is, in the set state, the variable resistance element 102 behaves according to the voltage-current characteristic 121 shown in FIG. 2 with respect to the applied voltage VSW . Since the V SW is low region of the low-resistance state, flows much current, it exceeds voltages V 1 there is a V SW, the current value is rapidly reduced. This is a result of switching of the variable resistance element 102 to the high resistance state, that is, the reset state. When V SW further increases and V SW exceeds a certain voltage V 2 , the current value increases rapidly. This is a result of the resistance change element 102 switching to the set state again.
  • the resistance change element 102 when the resistance change element 102 is in the high resistance state, that is, the reset state, the resistance change element 102 exhibits a behavior according to the voltage-current characteristic 122 shown in FIG. 2 with respect to the applied voltage VSW .
  • V SW voltage-current characteristic
  • the present inventors are engaged in research and development of semiconductor memory devices, and are conducting various studies on improving the performance of semiconductor memory devices.
  • investigations have been made on ReRAM, which is considered to be advantageous for miniaturization, in a resistance change element in which the resistance value at the time of setting is low regardless of the area.
  • ReRAMs unipolar operation is considered important for circuit configuration, and resistance variable materials centering on transition metal oxides are being studied.
  • the points considered to be important are described below.
  • the semiconductor memory device clarified in the present invention solves the problem that has been clarified after manufacturing the semiconductor device having the variable resistance element ReRAM in the above-described example.
  • One of the objects of the present invention is to provide a semiconductor device and an element in which a switching operation can be performed again when the variable resistance element is fixed in a high resistance state or a low resistance state and a desired characteristic cannot be obtained in the variable resistance element.
  • a reproduction circuit and an element reproduction method are provided.
  • the semiconductor device when the first voltage pulse is input, the semiconductor device transits from the first resistance state to the second resistance state having a lower resistance value, and the second voltage pulse is input. Then, the variable resistance element includes a variable resistance element having a characteristic of transition from the second resistance state to the first resistance state, and the resistance change element does not transition even when the first or second voltage pulse is input.
  • a restoration process is performed in which a third voltage pulse having a positive or negative sign opposite to that of the first or second voltage pulse and a voltage amplitude set to a predetermined value is input, the above characteristics are obtained. It is something to restore.
  • the semiconductor device when the first voltage pulse is input, the semiconductor device transits from the first resistance state to the second resistance state having a lower resistance value, and the second voltage pulse is input. Then, the variable resistance element includes a variable resistance element having a characteristic of transition from the second resistance state to the first resistance state, and the resistance change element does not transition even when the first or second voltage pulse is input.
  • a restoration process is performed in which a third voltage pulse having an amplitude larger than that of the input voltage pulse is input, the above characteristics are restored.
  • the element resistance circuit transits from the first resistance state to the second resistance state having a lower resistance value, and the second voltage pulse is input. Then, a voltage pulse generator for inputting a voltage pulse to the variable resistance element having a characteristic of transitioning from the second resistance state to the first resistance state, and the first or second voltage pulse to the variable resistance element When the resistance state of the resistance change element does not transition even if is input, the third or second voltage pulse having the opposite sign and the voltage amplitude set to a predetermined value with respect to the first or second voltage pulse And a control unit that causes the voltage pulse generation unit to perform a restoration process for inputting the voltage pulse to the resistance change element.
  • the element resistance circuit transits from the first resistance state to the second resistance state having a lower resistance value, and the second voltage pulse is input. Then, a voltage pulse generator for inputting a voltage pulse to the variable resistance element having a characteristic of transitioning from the second resistance state to the first resistance state, and the first or second voltage pulse to the variable resistance element
  • a control unit that causes the voltage pulse generation unit to perform a restoration process of inputting a third voltage pulse having a larger amplitude than the input voltage pulse to the resistance change element, It is the composition which has.
  • the element regeneration method when a first voltage pulse is input, a transition is made from the first resistance state to a second resistance state having a lower resistance value, and the second voltage pulse is input. If so, a method for reproducing a resistance change element having a characteristic of transitioning from a second resistance state to a first resistance state, wherein the first or second voltage pulse is input to the resistance change element, and the resistance change element is input.
  • the resistance state of the resistance change element does not transition even when the first or second voltage pulse is input, the sign of the positive or negative sign is opposite to that of the first or second voltage pulse, and the voltage amplitude is predetermined.
  • a third voltage pulse set to a value is input to the resistance change element.
  • the element regeneration method when a first voltage pulse is input, a transition is made from the first resistance state to a second resistance state having a lower resistance value, and the second voltage pulse is input. If so, a method for reproducing a resistance change element having a characteristic of transitioning from a second resistance state to a first resistance state, wherein the first or second voltage pulse is input to the resistance change element, and the resistance change element is input.
  • a third voltage pulse having an amplitude larger than that of the input voltage pulse is input to the resistance change element.
  • FIG. 1 is a diagram showing a configuration of a related semiconductor device.
  • FIG. 2 is a diagram illustrating the operation of the related semiconductor device.
  • FIG. 3 is a diagram showing a change in resistance value of a related semiconductor device.
  • FIG. 4 is a diagram showing a change in resistance value of a related semiconductor device.
  • FIG. 5 is a diagram showing an example of the configuration of the semiconductor device according to the embodiment of the present invention.
  • FIG. 6 is a block diagram showing a configuration example of the rewrite power supply circuit shown in FIG.
  • FIG. 7 is a diagram illustrating an example of the operation of the semiconductor device according to the first embodiment.
  • FIG. 8 is a diagram illustrating an example of voltage pulses used in the semiconductor device according to the first embodiment.
  • FIG. 9 is a diagram illustrating an example of changes in the resistance value of the semiconductor device according to the first embodiment.
  • FIG. 10 is a diagram illustrating an example of voltage pulses used in the characteristic restoration process in the first embodiment.
  • FIG. 11 is a diagram illustrating an example of the characteristic restoration process in the first embodiment.
  • FIG. 12 is a diagram illustrating an example of voltage pulses used in the semiconductor device according to the second embodiment.
  • FIG. 13 is a diagram illustrating an example of changes in the resistance value of the semiconductor device according to the second embodiment.
  • FIG. 14 is a diagram illustrating an example of voltage pulses used in the semiconductor device according to the third embodiment.
  • FIG. 15 is a diagram illustrating an example of changes in the resistance value of the semiconductor device according to the third embodiment.
  • FIG. 5 is a schematic diagram showing a configuration example of a semiconductor device that performs a reproducing operation of the resistance change element in the present embodiment.
  • the semiconductor device 1 has a configuration including a resistance change element 10 to which a rewrite power supply circuit 14 is connected.
  • the resistance change element 10 includes a first electrode 11 and a second electrode 12, and a variable resistor 13 sandwiched between the two electrodes.
  • the first electrode 11 is connected to the rewrite power supply circuit 14, and the second electrode 12 is connected to a ground line (ground line).
  • variable resistor 13 As a material constituting the resistance change element 10, various combinations of variable resistors and electrode materials have been reported, and any combination of materials used for the resistance change element 10 can be used.
  • the material of the variable resistor 13 include compounds composed of any one of oxygen, nitrogen, sulfur, selenium, tellurium, or a combination thereof, as synthesized with the base metal. Among these, a compound composed of a metal and oxygen is given as a representative example of the material of the variable resistor 13.
  • variable resistor 13 Cr, Ti, V, Ni, Cu, Zr, Nb, Mo, Hf, Ta, and W are effective, and among them, Ti, Ni, and Cu are given as typical examples. .
  • a sputtering method, a laser ablation method, a vapor phase chemical growth method or the like may be used.
  • the film thickness of the variable resistor 13 is preferably in the range of approximately 5 nanometers to 300 nanometers.
  • first electrode 11 and the second electrode 12 various metals can be used. Among them, TaN, TiN, Ru, Pt, W, Mo, Ta, and the like are given as typical examples.
  • FIG. 6 is a block diagram showing a configuration example of the rewrite power supply circuit shown in FIG.
  • the rewrite power supply circuit 14 includes a voltage pulse generation unit 141 that generates a voltage pulse, a measurement unit 143 that measures the resistance value of the resistance change element 10, and a voltage based on the measurement result of the measurement unit 143. And a control unit 142 that controls the pulse generation unit 141.
  • the control unit 142 may have a configuration including a CPU (Central Processing Unit) that executes processing according to a program and a memory that stores the program, or may be a dedicated circuit for executing predetermined processing.
  • CPU Central Processing Unit
  • the voltage pulse generator 141 is supplied with a power supply voltage from the outside, and outputs a voltage pulse to the resistance change element 10 in accordance with an instruction from the controller 142.
  • the measurement unit 143 measures the resistance value of the variable resistance element 10 and transmits the result to the control unit 142.
  • the measured resistance value is an example of an evaluation value indicating an index of the characteristic of the resistance change element 10.
  • the normal characteristic of the resistance change element 10 means a state in which the set operation and the reset operation can be normally performed.
  • the control unit 142 sends the instruction to the voltage pulse generation unit 141 and corresponds to the input instruction.
  • the voltage pulse is output to the voltage pulse generator 141.
  • the control unit 142 is registered in advance with a value that is a criterion for determining whether or not the characteristic of the resistance change element 10 is abnormal. Then, when the control unit 142 receives the evaluation value from the measurement unit 143, the control unit 142 compares the value with a value serving as a determination criterion, and if the comparison result determines that the resistance change element 10 is abnormal, The voltage pulse generation unit 141 is instructed to perform the restoration process. By performing the restoration process, the characteristic restoration process is performed in the variable resistance element 10. The condition of the voltage pulse for performing the restoration process is registered in the control unit 142 in advance.
  • a value that is a criterion for determining whether or not the characteristic of the resistance change element 10 is abnormal is registered in the control unit 142, but may be registered in the measurement unit 143.
  • the voltage pulse condition for performing the restoration process is registered in the control unit 142, it may be registered in the voltage pulse generation unit 141.
  • the second electrode 12 side is not limited to the ground line 15 shown in this form, and another circuit or transistor may be connected. What is important is that the rewrite power supply circuit 14 has the capability to apply a sufficient voltage for rewriting the resistance change element 10 between the first electrode 11 and the second electrode 12 of the resistance change element 10. .
  • the resistance change element 10 and the rewrite power supply circuit 14 are directly connected, but one or a plurality of transistors are provided between the resistance change element 10 and the rewrite power supply circuit 14 as in a memory circuit. May be provided.
  • the semiconductor device of this embodiment transitions from a high resistance state to a low resistance state when a first voltage pulse is input, and transitions from a low resistance state to a high resistance state when a second voltage pulse is input.
  • the voltage value of the variable resistance element is a predetermined value opposite to that of the first or second voltage pulse.
  • the semiconductor device of this embodiment includes means for measuring an evaluation value that serves as an index of the characteristic of the resistance change element when the first or second voltage pulse is input, and the evaluation value measured by the measuring means.
  • a process of restoring the characteristics by applying a voltage pulse having a predetermined polarity and voltage value to the variable resistance element may be performed.
  • the semiconductor device of this embodiment includes means for measuring an evaluation value that serves as an index of the characteristic of the resistance change element when the first or second voltage pulse is input, and the evaluation value measured by the measuring means. Is a process of restoring the characteristics by applying a voltage pulse having a predetermined polarity and voltage value to the resistance change element when the intended characteristics are not obtained as a result of comparison with a preset reference value. It may be done.
  • the voltage pulse in which the polarity and the voltage value are determined in advance may be a voltage pulse having an opposite sign to that of the first or second voltage pulse and the voltage value being set to any value within a predetermined range. .
  • the resistance value after the reset operation is measured as an evaluation value, and the resistance change element changes from the high resistance state to the low resistance state.
  • the operation to be performed is defined as a set operation, a resistance value after the set operation may be measured as an evaluation value.
  • the amplitude of the applied voltage pulse is not less than 0.5 times and not more than 3 times the absolute value of the voltage pulse applied when recording information. Is preferable, and it is more preferable that it is 0.75 times or more and 1.5 times or less.
  • the semiconductor device transitions from the high resistance state to the low resistance state when the first voltage pulse is input, and from the low resistance state when the second voltage pulse is input.
  • a semiconductor device having a resistance change element that transitions to a resistance state when the characteristic of the resistance change element does not exhibit the intended change, a voltage having a larger amplitude than the first or second voltage pulse is applied to the resistance change element. A process of restoring the characteristics by applying a pulse is performed.
  • the amplitude of the applied voltage pulse is 1.01 to 3 times the voltage of the voltage pulse applied when recording information. Moreover, it is preferable that a pulse for restoring the above characteristics is continuously applied twice or more.
  • the amplitude of the voltage pulse applied when recording information is 3/4 or less of the voltage pulse amplitude applied when recording normal information. It is preferable that
  • the low resistance state and the high resistance state may be reversibly changed.
  • the semiconductor device having a variable resistance element according to the present invention described above can be sufficiently realized by using a current integrated circuit formation technique, and any semiconductor device having an integrated circuit formation technology for a related semiconductor device can be used.
  • the apparatus can be reproduced without any problem.
  • the semiconductor device regeneration method disclosed by the present invention for a resistance change element in which a desired set / reset operation has ceased to occur the resistance change element is regenerated into a switchable state, The lifetime of not only the resistance change element but also the semiconductor device having the resistance change element can be extended.
  • the number of switching of the resistance change element can be greatly improved from about several hundred times, and the life of the semiconductor device having the resistance change element and the resistance change element can be greatly extended. Become.
  • the switching operation can be performed again. It becomes possible to return to.
  • the yield of the variable resistance element and the semiconductor device having the variable resistance element can be greatly improved.
  • variable resistance element 10 having a variable resistor 13 having a thickness of 100 nanometers and made of NiO, and a first electrode 11 and a second electrode 12 made of Ru was produced.
  • FIG. 7 is a graph showing a specific example of the unipolar operation of the variable resistance element in the semiconductor device of this example.
  • a pulse having a voltage amplitude of 8 volts and a 300 nanosecond pulse may be applied.
  • a pulse having a voltage amplitude of 3 volts and 50 microseconds may be applied.
  • this resistance change element 10 when the rewrite operation is repeatedly performed, the high resistance state and the low resistance state are satisfactorily switched up to several hundred times. Thereafter, the low resistance state is changed to the high resistance state. In many cases, the transition, i.e., the reset operation becomes difficult, and the switching operation does not occur. The situation is as shown in FIG.
  • Such a behavior of the resistance value is not preferable from the viewpoint of the lifetime of the resistance change element 10 and the semiconductor device 1.
  • the behavior of the resistance change element 10 is recovered by the following method, and switching is performed. It was found that the characteristics can be restored.
  • a switching operation does not occur by applying a voltage pulse having a sign opposite to that of a voltage pulse that is normally applied when recording information to the variable resistance element 10 in which the switching operation does not occur.
  • the variable resistance element 10 can be brought into a switchable state again.
  • FIG. 8 schematically shows voltage pulses used in the set / reset operation and the characteristic restoration process during normal unipolar operation.
  • FIG. 9 schematically shows a normal set / reset operation, a state in which switching does not occur, a characteristic restoration process, and a change in resistance value after characteristic restoration.
  • the voltage amplitude necessary for the characteristic restoration process when the reset operation becomes difficult is about ⁇ 4 volts to ⁇ 24 volts, more preferably ⁇ 6 volts. To about -12 volts. In this case, the voltage amplitude necessary for the normal set operation is about 8 volts.
  • the film thickness of NiO serving as the variable resistor 13 is 50 nanometers
  • a pulse having a voltage amplitude of 4 volts may be applied.
  • the voltage amplitude required for the characteristic restoration process is about -2 volts to -12 volts. Therefore, in the characteristic restoration process when the reset operation becomes difficult, the sign is reversed, and the absolute value of the voltage amplitude is about 0.5 to 3 times, more preferably 0.75 to 1.5 times that of the set operation. It will be enough if it is about.
  • the pulse width applied in the characteristic restoration process is effective from a short one nanosecond to a long one second. It has also been found that more reliable characteristic restoration is possible when the same pulse is input many times.
  • the amplitude of the applied voltage pulse is set lower than the voltage used in normal information recording.
  • the variable resistor 13 having a film thickness of 100 nanometers described above, a voltage amplitude of 8 volts is used for normal information recording, and -4 volts to -12 volts are used in the characteristic restoration process.
  • a sufficient setting operation could be performed with a voltage of 3/4 or less of 8 volts, that is, 6 volts or less.
  • the characteristic restoration process in the case of the unipolar operation in which the voltage having the same sign is applied in the set operation and the reset operation has been described.
  • the above method has different codes in the set operation and the reset operation. It can be extended to a characteristic restoration process in the case of bipolar operation in which a voltage is applied.
  • FIG. 10 schematically shows voltage pulses used for the set / reset operation and the characteristic restoration process during normal bipolar operation.
  • the set operation from the high resistance state to the low resistance state has a voltage amplitude of 8 volts, a pulse of 300 nanoseconds is applied, and the reset operation from the low resistance state to the high resistance state is the set operation.
  • a case where a pulse of 10 microseconds having a voltage amplitude of -4 volts as an opposite sign is applied will be described.
  • the variable resistor 13 having a film thickness of 100 nanometers undergoes the characteristic restoration process.
  • the required voltage amplitude was about -4 volts to -24 volts, more preferably about -6 volts to -12 volts.
  • the film thickness of NiO serving as the variable resistor 13 is 50 nanometers
  • a pulse having a voltage amplitude of 4 volts may be applied.
  • the voltage amplitude required for the characteristic restoration process was about -2 volts to -12 volts. Therefore, in the characteristic restoration process when the reset operation becomes difficult, the sign is reversed, and the absolute value of the voltage amplitude is about 0.5 to 3 times, more preferably 0.75 to 1.5 times that of the set operation. It will be enough if it is about.
  • the resistance value of the resistance change element 10 is evaluated after the reset operation. As a result, it is possible to manage whether or not the reset operation of the resistance change element 10 has been reliably performed, and it is possible to determine whether or not to perform the characteristic restoration process.
  • the procedure of this reproduction method will be described with reference to the flowchart shown in FIG. Here, a description will be given of a case where the control unit 142 of the rewrite power supply circuit 14 executes processing according to the procedure shown in FIG.
  • the control unit 142 When a reset operation instruction is input from the outside, the control unit 142 causes the voltage pulse generation unit 141 to generate a voltage pulse for the reset operation, and the voltage pulse generation unit 141 sends the generated voltage pulse to the resistance change element 10. Apply (step 1). Thereby, the resistance change element 10 is changed from the low resistance state to the high resistance state. Subsequently, the measurement unit 143 measures the resistance value and transmits the measurement value to the control unit 142. When receiving the measurement value from the measurement unit 143, the control unit 142 compares the measurement value with the set value (step 2). The set value is a lower limit value of the resistance value when the variable resistance element 10 is normally reset, and is recorded in the control unit 142.
  • control part 142 determines whether a measured value is larger than a setting value, in order to investigate whether the variable resistance element 10 will be in the desired high resistance state by reset operation (step 3).
  • step 3 when the measured value of the resistance change element 10 is about the resistance value after the setting operation, the measured value becomes smaller than the set value. If the measured value is smaller than the set value, it indicates that the reset operation is difficult, and the intended characteristic change is not obtained. Therefore, the control unit 142 determines that it is necessary to cause the variable resistance element 10 to undergo a characteristic restoration process, and executes a characteristic restoration process (step 4).
  • the control unit 142 determines that the variable resistance element 10 exhibits normal characteristics, and waits until the next set operation based on the rewrite instruction input is performed (step 5).
  • variable resistance element 10 By performing such a regeneration method on the variable resistance element 10 in which the reset operation becomes difficult and switching has not occurred, it becomes possible to make the variable resistance element 10 switchable again. It has been shown. This includes the resistance change element 10 and the resistance change element 10 regardless of whether the resistance change element 10 is applied to a memory circuit or used in a rewritable logic circuit typified by a field programmable gate array. This means that the life of the semiconductor device 1 can be extended.
  • Example 1 NiO was used as the variable resistor 13, but it was found that the behavior shown differs when the material of the variable resistor 13 is different.
  • This example relates to a method for regenerating a variable resistance element when a material different from that of the first embodiment is used as the variable resistor material.
  • variable resistance element 10 having the variable resistor 13 having a film thickness of 100 nanometers and the material being TiO (N) and the first electrode 11 and the second electrode 12 having the material Ru was used.
  • variable resistance element 10 of the present embodiment in the unipolar operation of the variable resistance element 10 of the present embodiment, in the set operation from the high resistance state to the low resistance state, for example, a pulse having a voltage amplitude of 8 volts and a pulse of 300 nanoseconds may be applied. Further, in the reset operation from the low resistance state to the high resistance state, for example, a pulse having a voltage amplitude of 3 volts and 50 microseconds may be applied. Such switching between the high resistance state and the low resistance state can be realized under the conditions of the set operation and the reset operation.
  • this resistance change element 10 when rewriting operation is repeated, the high resistance state and the low resistance state are satisfactorily switched up to several hundred times. Thereafter, the high resistance state is changed to the low resistance state. Transition, that is, the set operation becomes difficult, and there are many cases where the switching operation does not occur.
  • Such a behavior of the resistance value is not preferable from the viewpoint of the lifetime of the resistance change element 10 and the semiconductor device 1.
  • the behavior of the resistance change element 10 is recovered by the following method, and switching is performed. It was found that the characteristics can be restored.
  • a switching operation does not occur by applying a voltage pulse having a sign opposite to that of a voltage pulse that is normally applied when recording information to the variable resistance element 10 in which the switching operation does not occur.
  • the variable resistance element 10 can be brought into a switchable state again.
  • FIG. 12 schematically shows voltage pulses used for a set / reset operation and a characteristic restoration process during normal unipolar operation.
  • FIG. 13 schematically shows a normal set / reset operation, a state in which switching does not occur, a characteristic restoration process, and a change in resistance value after characteristic restoration.
  • the voltage amplitude necessary for the characteristic restoration process when the set operation becomes difficult is about ⁇ 1.5 volts to ⁇ 9 volts, more preferably ⁇ 2.25 volts to -4.5 volts.
  • the voltage amplitude required for the normal reset operation is about 3 volts.
  • the film thickness of TiON that is the variable resistor 13 is 50 nanometers
  • a pulse having a voltage amplitude of 1.5 volts may be applied.
  • the voltage amplitude required for the characteristic restoration process is about -0.75 to -4.5 volts. Therefore, in the characteristic restoration process when the set operation becomes difficult, the sign is reversed and the absolute value of the voltage amplitude is about 0.5 to 3 times, more preferably 0.75 to 1.5 times that of the reset operation. It will be enough if it is about.
  • the pulse width applied in the characteristic restoration process is effective from a short one nanosecond to a long one second. It has also been found that more reliable characteristic restoration is possible when the same pulse is input many times.
  • the amplitude of the applied voltage pulse lower than the voltage used during normal information erasure.
  • a voltage amplitude of 3 volts is used for normal information erasing, and ⁇ 1.5 to ⁇ 4.5 volts is used in the characteristic restoration process.
  • a sufficient setting operation can be performed at a voltage of 3/4 or less of 3 volts, that is, 2.25 volts or less.
  • the characteristic restoration process in the case of the unipolar operation in which the voltage having the same sign is applied in the set operation and the reset operation has been described.
  • the above method has different codes in the set operation and the reset operation. It can be extended to a characteristic restoration process in the case of bipolar operation in which a voltage is applied.
  • a pulse of 300 nanoseconds having a voltage amplitude of 8 volts is applied, and in the reset operation from the low resistance state to the high resistance state, it is opposite to the set operation.
  • a case will be described in which a pulse having a voltage amplitude of -4 volts as a sign and a pulse of 10 microseconds is applied.
  • the voltage amplitude necessary for the characteristic restoration process has a film thickness of 100 nanometers. In the case of the variable resistor 13, it was about 8 to 12 volts.
  • the film thickness of TiON which is the variable resistor 13 is 50 nanometers
  • a pulse having a voltage amplitude of ⁇ 2 volts may be applied.
  • the voltage amplitude required for the characteristic restoration process was about 4 to 6 volts. Therefore, in the characteristic restoration process when the set operation becomes difficult, the sign is reversed and the absolute value of the voltage amplitude may be about 2 to 3 times that of the set operation.
  • the resistance value of the variable resistance element 10 is evaluated after the set operation. Thereby, it is possible to manage whether or not the setting operation of the resistance change element 10 has been performed reliably, and it is possible to determine whether or not to perform the characteristic restoration process.
  • the procedure of the reproduction method described below is the same as that in the flowchart shown in FIG. 11 except that the setting operation in step 1 and the resetting operation in step 5 are interchanged and the setting value in step 3 and the direction of the inequality sign are changed. Same as 1.
  • the set value is an upper limit value of the resistance value when the variable resistance element 10 is normally set.
  • the outline of the procedure will be described with reference to FIG. Note that when the control unit 142 executes this reproduction method, the description is omitted because it is the same as the description of the first embodiment.
  • step 1 a set operation is performed on the resistance change element 10. That is, a voltage pulse necessary for the set operation is applied to the resistance change element 10 to change the resistance change element 10 from the high resistance state to the low resistance state. Subsequently, the resistance value of the variable resistance element 10 is measured. At this time, the measured value of the variable resistance element 10 and the set value are compared (step 2), and it is determined whether the desired low resistance state is achieved by the set operation (step 3). In step 3, when the measured value of the resistance change element 10 is about the resistance value after the reset operation, it indicates that the set operation is difficult, and the intended characteristic change is not obtained. Therefore, a characteristic restoration process is necessary.
  • step 3 determines whether the characteristic restoration process is necessary. If it is determined in step 3 that the characteristic restoration process is necessary, the process proceeds to step 4 to perform the characteristic restoration process. On the other hand, when the measured value of the resistance change element 10 is sufficiently lower than the resistance value after the reset operation, the next switching is possible (step 5).
  • the resistance change element 10 can be switched again. This includes the resistance change element 10 and the resistance change element 10 regardless of whether the resistance change element 10 is applied to a memory circuit or used in a rewritable logic circuit typified by a field programmable gate array. This means that the life of the semiconductor device 1 can be extended.
  • the symptom that the switching operation does not occur is not limited to the stage after repeating the switching operation many times, but can occur even at a relatively early stage after starting to use the variable resistance element before repeating the switching operation many times. . It has also been found that even in a relatively early stage after using the variable resistance element, the set operation, which is a switching operation for transitioning from the high resistance state to the low resistance state, may be difficult.
  • the present embodiment relates to a method for regenerating a variable resistance element that has become unable to perform a switching operation at an initial stage.
  • variable resistance element 13 having a film thickness of 100 nanometers and a material NiO
  • variable resistance element 10 having a first electrode 11 and a second electrode 12 made of Ru.
  • the voltage pulse input to the resistance change element 10 is performed by the rewrite power supply circuit 14 by an external instruction input or a control process of the control unit 142, and detailed description thereof is omitted.
  • a pulse of 300 nanoseconds having a voltage amplitude of 8 volts is used in the set operation from the high resistance state to the low resistance state. May be applied in the reset operation from the low resistance state to the high resistance state.
  • a pulse of 50 microseconds having a voltage amplitude of 3 volts may be applied in the reset operation from the low resistance state to the high resistance state. Such switching between the high resistance state and the low resistance state can be realized under the conditions of the set operation and the reset operation.
  • variable resistance element 10 in a relatively early stage after the use of the variable resistance element 10, a transition from a high resistance state to a low resistance state, that is, a set operation becomes difficult, and there are many cases where a switching operation does not occur. occured. Such a case is not preferable from the viewpoint of the yield of the resistance change element 10 and the semiconductor device 1, but the behavior is restored to the resistance change element 10 by the following method to restore the switching characteristics. I found out that I could do it.
  • a switching operation is caused by applying a voltage pulse having a voltage amplitude larger than that of a voltage pulse normally applied when recording information to the variable resistance element 10 in which the switching operation has not occurred.
  • the resistance change element 10 which has disappeared can be brought into a switchable state again.
  • FIG. 14 schematically shows voltage pulses used for the set / reset operation and the characteristic restoration process during normal unipolar operation.
  • FIG. 15 schematically shows a normal set / reset operation, a state where switching does not occur, a characteristic restoration process, and a transition of the resistance value after the characteristic restoration.
  • the voltage amplitude required for the characteristic restoration process when the set operation becomes difficult is about 8.1 to 24 volts, more preferably 8.8. It was about 18 volts from the bolt. In this case, the voltage amplitude necessary for the normal set operation is about 8 volts.
  • the film thickness of NiO serving as the variable resistor 13 is 50 nanometers, in the setting operation from the high resistance state to the low resistance state, for example, a pulse having a voltage amplitude of 4 volts may be applied.
  • the voltage amplitude required for the characteristic restoration process is about 4.05 to 12 volts. Therefore, in the characteristic restoration process when the set operation becomes difficult, the sign is reversed and the absolute value of the voltage amplitude may be about 1.01 to 3 times that of the set operation.
  • the pulse width applied in the characteristic restoration process is effective from a short one nanosecond to a long one second. It was also found that more reliable characteristic restoration is possible by inputting the same pulse many times.
  • the amplitude of the applied voltage pulse is set lower than the voltage used in normal information recording.
  • the amplitude of the voltage pulse to be applied immediately after it may be about 3/4 of the amplitude of the voltage pulse applied at the time of information rewriting, as in the first or second embodiment.
  • the characteristic restoration process in the case of the unipolar operation in which the voltage having the same sign is applied in the set operation and the reset operation has been described.
  • the above method has different codes in the set operation and the reset operation. It can be extended to a characteristic restoration process in the case of bipolar operation in which a voltage is applied.
  • a pulse of 300 nanoseconds having a voltage amplitude of 8 volts is applied, and in the reset operation from the low resistance state to the high resistance state, it is opposite to the set operation.
  • a case will be described in which a pulse having a voltage amplitude of -4 volts as a sign and a pulse of 10 microseconds is applied.
  • the voltage amplitude necessary for the characteristic restoration process has a film thickness of 100 nanometers. In the case of the variable resistor 13, it was about 8.1 to 24 volts.
  • the film thickness of NiO which is the variable resistor 13 is 50 nanometers
  • a pulse having a voltage amplitude of 4 volts may be applied.
  • the voltage amplitude required for the characteristic restoration process was about 4.05 to 12 volts. Therefore, in the characteristic restoration process when the set operation becomes difficult, the sign is reversed and the absolute value of the voltage amplitude may be about 1.01 to 3 times that of the set operation.
  • the resistance value of the variable resistance element 10 is evaluated after the set operation. Thereby, it is possible to manage whether or not the setting operation of the resistance change element 10 has been performed reliably, and it is possible to determine whether or not to perform the characteristic restoration process.
  • the procedure of the reproduction method described below is the same as that in the flowchart shown in FIG. 11 except that the setting operation in step 1 and the resetting operation in step 5 are interchanged and the setting value in step 3 and the direction of the inequality sign are changed. Same as 1.
  • the set value is an upper limit value of the resistance value when the variable resistance element 10 is normally set.
  • the outline of the procedure will be described with reference to FIG. Note that when the control unit 142 executes this reproduction method, the description is omitted because it is the same as the description of the first embodiment.
  • step 1 a set operation is performed on the resistance change element 10. That is, a voltage pulse necessary for the set operation is applied to change the resistance change element 10 from the high resistance state to the low resistance state. Subsequently, the resistance value of the variable resistance element 10 is measured. At this time, the measured value of the variable resistance element 10 and the set value are compared (step 2), and it is determined whether the desired low resistance state is achieved by the set operation (step 3). In step 3, when the measured value of the resistance change element 10 is about the resistance value after the reset operation, it indicates that the set operation is difficult, and the intended characteristic change is not obtained. Therefore, a characteristic restoration process is necessary.
  • step 3 determines whether the characteristic restoration process is necessary. If it is determined in step 3 that the characteristic restoration process is necessary, the process proceeds to step 4 to perform the characteristic restoration process. On the other hand, when the measured value of the resistance change element 10 is sufficiently lower than the resistance value after the reset operation, the next switching is possible (step 5).
  • the resistance change element 10 is used. It has been shown that it becomes possible to switch to a state in which switching can be performed again. This method can be applied even when the set operation becomes difficult after the repeated operation is performed many times. This includes the resistance change element 10 and the resistance change element 10 regardless of whether the resistance change element 10 is applied to a memory circuit or used in a rewritable logic circuit typified by a field programmable gate array. This means that the yield of the semiconductor device 1 can be improved and the life can be extended.
  • the characteristic restoring process of the resistance change element 10 when the setting operation of the resistance change element 10 becomes difficult at a relatively early stage after being used has been described.
  • the reset operation becomes difficult.
  • the reproduction method of this embodiment may be applied.
  • variable resistance element it is possible to extend the lifetime of the variable resistance element and the semiconductor device having the variable resistance element. It is also possible to improve the yield of the variable resistance element and the semiconductor device having the variable resistance element.
  • the application range of the variable resistance element extends over a wide range from a semiconductor memory device configured by arranging variable resistance elements on a matrix and a semiconductor device using the variable resistance element as a switch connecting the first circuit and the second circuit. I can expect.
  • variable resistance elements Even if the resistance change element has other configurations, the number of rewritable times is limited, and the resistance change element can recover its characteristics by a pulse having a sign opposite to that of the voltage used when recording data.
  • the present invention can be applied. Also, the present invention can be applied to any resistance change element that has a finite number of rewritable times and whose characteristics can be recovered by a pulse having a voltage amplitude larger than the voltage used when recording data. Is possible.

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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

L’invention concerne un dispositif semi-conducteur (1) comprenant un élément à résistance variable (10). L'élément à résistance variable (10) a une caractéristique de passage d'un premier état de résistance à un second état de résistance dans lequel la valeur de résistance est inférieure à celle dans le premier état de résistance lorsqu'une première impulsion de tension est appliquée et de passage du second état de résistance au premier état de résistance lorsqu'une deuxième impulsion de tension est appliquée. Lorsque l'élément à résistance variable (10) ne change pas d'état de résistance même si la première ou la deuxième impulsion de tension est appliquée, un processus de récupération consistant à appliquer une troisième impulsion de tension ayant une polarité opposée à celle des première et deuxième impulsions de tension et une amplitude de tension fixée à une valeur prédéterminée est exécuté, et l'élément à résistance variable (10) récupère la propriété.
PCT/JP2009/059882 2008-05-30 2009-05-29 Dispositif semi-conducteur, circuit de récupération d'élément, et procédé de récupération d'élément WO2009145308A1 (fr)

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JP4778125B1 (ja) * 2010-02-02 2011-09-21 パナソニック株式会社 抵抗変化素子の駆動方法、初期処理方法、及び不揮発性記憶装置
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JP2011187144A (ja) * 2010-03-11 2011-09-22 Toshiba Corp 半導体記憶装置
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JP4838399B2 (ja) * 2010-03-30 2011-12-14 パナソニック株式会社 不揮発性記憶装置及び不揮発性記憶装置への書き込み方法
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US8654559B2 (en) 2010-09-17 2014-02-18 Sharp Kabushiki Kaisha Semiconductor memory device
JP2012064283A (ja) * 2010-09-17 2012-03-29 Sharp Corp 半導体記憶装置
US9153319B2 (en) 2011-03-14 2015-10-06 Panasonic Intellectual Property Management Co., Ltd. Method for driving nonvolatile memory element, and nonvolatile memory device having a variable resistance element
JPWO2012124314A1 (ja) * 2011-03-14 2014-07-17 パナソニック株式会社 不揮発性記憶素子の駆動方法及び不揮発性記憶装置
WO2012124314A1 (fr) * 2011-03-14 2012-09-20 パナソニック株式会社 Procédé de commande d'élément de stockage non volatil et dispositif de stockage non volatil
JP5490961B2 (ja) * 2011-03-14 2014-05-14 パナソニック株式会社 不揮発性記憶素子の駆動方法及び不揮発性記憶装置
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JP5209151B1 (ja) * 2011-08-11 2013-06-12 パナソニック株式会社 抵抗変化型不揮発性記憶素子の書き込み方法
US9076525B2 (en) 2011-09-26 2015-07-07 Kabushiki Kaisha Toshiba Semiconductor storage device and method of controlling data thereof
JP2013069391A (ja) * 2011-09-26 2013-04-18 Toshiba Corp 半導体記憶装置
US9224471B2 (en) 2011-10-18 2015-12-29 Micron Technology, Inc. Stabilization of resistive memory
GB2509040A (en) * 2011-10-18 2014-06-18 Micron Technology Inc Stabilization of resistive memory
GB2509040B (en) * 2011-10-18 2015-01-07 Micron Technology Inc Stabilization of resistive memory
US8958233B2 (en) 2011-10-18 2015-02-17 Micron Technology, Inc. Stabilization of resistive memory
JP5400253B1 (ja) * 2012-03-23 2014-01-29 パナソニック株式会社 抵抗変化型不揮発性記憶素子の書き込み方法および抵抗変化型不揮発性記憶装置
WO2013140754A1 (fr) * 2012-03-23 2013-09-26 パナソニック株式会社 Procédé d'écriture d'un élément de stockage non-volatile à changement de résistance et. dispositif de stockage non-volatile à changement de résistance
US9202565B2 (en) 2012-03-23 2015-12-01 Panasonic Intellectual Property Management Co., Ltd. Write method for writing to variable resistance nonvolatile memory element and variable resistance nonvolatile memory device
JP2013228767A (ja) * 2012-04-24 2013-11-07 Sony Corp 記憶制御装置、メモリシステム、情報処理システム、および、記憶制御方法
US9829521B2 (en) 2013-03-18 2017-11-28 Panasonic Intellectual Property Management Co., Ltd. Estimation method, estimation device, and inspection device for variable resistance element, and nonvolatile memory device
JP2014207046A (ja) * 2013-03-18 2014-10-30 パナソニック株式会社 抵抗変化素子の評価方法、評価装置、検査装置、及び不揮発性記憶装置
US10490275B2 (en) 2017-08-16 2019-11-26 Winbond Electronics Corp. Resistive memory storage apparatus and writing method thereof including disturbance voltage
US10783962B2 (en) 2017-09-01 2020-09-22 Winbond Electronics Corp. Resistive memory storage apparatus and writing method thereof including disturbance voltage

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