WO2009128225A1 - 縦型熱処理用ボートおよびそれを用いたシリコンウエーハの熱処理方法 - Google Patents
縦型熱処理用ボートおよびそれを用いたシリコンウエーハの熱処理方法 Download PDFInfo
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- WO2009128225A1 WO2009128225A1 PCT/JP2009/001649 JP2009001649W WO2009128225A1 WO 2009128225 A1 WO2009128225 A1 WO 2009128225A1 JP 2009001649 W JP2009001649 W JP 2009001649W WO 2009128225 A1 WO2009128225 A1 WO 2009128225A1
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- Prior art keywords
- silicon
- heat treatment
- substrate
- boat
- support
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 109
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 109
- 239000010703 silicon Substances 0.000 title claims abstract description 109
- 238000010438 heat treatment Methods 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 76
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 72
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000010453 quartz Substances 0.000 claims abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- 238000011109 contamination Methods 0.000 abstract description 30
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 12
- 238000012546 transfer Methods 0.000 abstract description 7
- 229910052786 argon Inorganic materials 0.000 abstract description 6
- 238000007788 roughening Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 113
- 239000002184 metal Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 230000003746 surface roughness Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 238000012545 processing Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 235000019592 roughness Nutrition 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Definitions
- the present invention relates to a vertical heat treatment boat used mainly for heat treating a silicon wafer and the like, and a heat treatment method for a silicon wafer using the boat.
- a number of steps are involved from a wafer processing process to an element formation process, one of which is a heat treatment process.
- the heat treatment step is an important process performed for the purpose of forming a defect-free layer on the surface layer of the wafer, gettering, crystallization, oxide film formation, impurity diffusion, and the like.
- a diffusion furnace oxidation / diffusion apparatus
- a large number of wafers are supported horizontally at predetermined intervals as the wafer diameter increases.
- a vertical heat treatment furnace for performing heat treatment is mainly used.
- heat treatment boat hereinafter sometimes referred to as “heat treatment boat” or simply “boat” for setting a large number of wafers. Used.
- FIG. 4 shows an outline of a conventional general vertical heat treatment boat.
- a pair of plate-like members 103 also referred to as connecting members, or top and bottom plates
- struts 102 rods
- a large number of slits 105 are formed in each column 102, and the convex portion between the slits 105 acts as a wafer support portion 106.
- the wafer W is placed on the support portion 106 formed at the same height of each column 102. By placing the outer peripheral portion, the wafer W is supported horizontally.
- FIG. 6 is a schematic view showing an example of a vertical heat treatment furnace.
- a number of wafers W are horizontally supported on the heat treatment boat 101 carried into the reaction chamber 222 of the vertical heat treatment furnace 220.
- the wafer W is heated by a heater 224 provided around the reaction chamber 222.
- gas is introduced into the reaction chamber 222 through the gas introduction pipe 226, flows downward from above, and is discharged from the gas exhaust pipe 228 to the outside.
- the gas to be used varies depending on the purpose of the heat treatment, but H 2 , N 2 , O 2 , Ar, etc. are mainly used. In the case of impurity diffusion, these gases are also used as a carrier gas for the impurity compound gas.
- the wafer support portion 106 in the vertical heat treatment boat 101 employs various shapes, and FIGS. 7A and 7B show examples.
- a semicircular support portion 106 ' is formed by providing a concave slit 105' (groove) in a columnar column 102 '.
- a rectangular columnar column 102 '' is provided with a concave slit 105 '' to provide a rectangular shape.
- the support portion 106 ′′ is formed.
- Japanese Patent Application Laid-Open No. 2004-241545 discloses a boat equipped with a support member that can be attached to and detached from the wafer support.
- the supporting auxiliary member is detachable, the chamfering process and the polishing process can be easily and inexpensively performed on the surface on which the wafer is placed, and the polishing can be performed. It is said that the occurrence of slip can be effectively suppressed by mounting a support auxiliary member subjected to processing or the like on a support portion, placing the wafer and performing heat treatment.
- materials such as quartz (SiO 2 ), silicon carbide (SiC), silicon (Si), etc. are usually used in order to prevent contamination of the wafer.
- quartz SiO 2
- SiC silicon carbide
- Si silicon
- Si etc.
- SiC boats are often used because metal contamination generated during heat treatment can be further reduced by applying a CVD-SiC coating.
- the surface of the surface is subjected to, for example, mirror polishing, so that the metal contamination concentration of Fe may be high in the surface layer portion of the SiC film.
- the Fe metal Contamination transfer can occur. This metal contamination transfer can be prevented by forming an oxide film on the surface of the heat treatment boat.
- the support auxiliary member is made of SiC having an oxide film formed on the surface.
- the present invention has been made in view of the above problems, and is used when a substrate to be processed such as a silicon wafer is placed on a vertical heat treatment boat provided with a support auxiliary member and heat treatment using argon or the like is performed.
- Another object of the present invention is to provide a vertical heat treatment boat capable of suppressing both the transfer of Fe contamination to a silicon wafer and the surface roughness of the back surface of the silicon wafer, and a heat treatment method for a silicon wafer using the same.
- the present invention includes at least a plurality of struts, a pair of plate-like members connected to both ends of each strut, and a plurality of substrates for horizontally supporting a substrate to be processed on each strut.
- a boat for vertical heat treatment comprising: a boat body having a support portion; and a support auxiliary member on which the substrate to be processed is placed, which is detachably attached to each of the plurality of support portions,
- the support auxiliary member includes a guide member mounted on the support portion, and a plate-like substrate support member that is fixed by the guide member and on which the substrate to be processed is placed.
- a hole is formed on the upper surface, and the substrate support member is fixedly inserted into the hole of the guide member, and the substrate to be processed is mounted when the support auxiliary member is mounted on a support portion of the boat body.
- the guide member is made of any one of carbon having a CVD coating of silicon, and the guide member is made of quartz, silicon carbide having a silicon oxide film, silicon carbide having a silicon nitride film, or silicon oxynitride film
- a vertical heat treatment boat characterized by being made of any one of silicon carbide, silicon with a silicon oxide film, silicon with a silicon nitride film, and silicon with a silicon oxynitride film To do.
- the back surface of the substrate to be processed in contact with the oxide film is roughened by the oxide film. End up.
- the oxide film is not formed on the support auxiliary member, the wafer surface is contaminated by Fe from the side surface of the support auxiliary member.
- the substrate support member on which the substrate to be processed is placed is inserted into a hole formed on the upper surface of the guide member attached to the support portion.
- the height position of the surface of the substrate support member on which the substrate to be processed is placed is higher than the height position of the upper surface of the guide member, and the substrate support member is made of silicon carbide, silicon, or silicon carbide. Since it is composed of any one of silicon carbide with CVD coating, silicon with silicon carbide CVD coating, and carbon with silicon carbide CVD coating, it is in contact with a substrate to be processed such as a silicon wafer.
- An oxide film is not formed on the portion, and the back surface of the substrate to be processed and the oxide film do not come into contact with each other when the substrate to be processed is placed and heat-treated. Thereby, it is possible to prevent the back surface of the substrate to be processed from being rough.
- the substrate support guide member is made of quartz, silicon carbide provided with a silicon oxide film, silicon carbide provided with a silicon nitride film, silicon carbide provided with a silicon oxynitride film, or silicon oxide film. Since it is made of any one of silicon applied, silicon applied with a silicon nitride film, and silicon applied with a silicon oxynitride film, the amount of Fe from the entire supporting auxiliary member to the surface of the substrate to be processed is increased accordingly. It is possible to greatly reduce the amount of metal contamination transfer.
- the boat body includes quartz, silicon carbide provided with a silicon oxide film, silicon carbide provided with a silicon nitride film, silicon carbide provided with a silicon oxynitride film, silicon provided with a silicon oxide film, It can be made of either silicon with a silicon nitride film or silicon with a silicon oxynitride film.
- the boat body is made of quartz, silicon carbide with a silicon oxide film, silicon carbide with a silicon nitride film, silicon carbide with a silicon oxynitride film, silicon with a silicon oxide film, Since it is made of either silicon with a silicon nitride film or silicon with a silicon oxynitride film, the amount of Fe metal contamination transferred from the boat body can be reduced. Can be further reduced.
- the difference between the height position of the surface of the substrate support member on which the substrate to be processed is placed and the height position of the upper surface of the guide member is preferably 0.05 to 1.0 mm.
- the difference between the height position of the surface of the substrate support member on which the substrate to be processed is placed and the height position of the upper surface of the guide member is 0.05 mm or more, that is, the substrate to be processed of the substrate support member is mounted. If the height position of the surface to be placed (substrate placement surface) is 0.05 mm or more higher than the height position of the upper surface of the guide member, the substrate to be processed is placed on the substrate support member. It is possible to avoid the substrate from coming into direct contact with the guide member. Moreover, in order to suppress Fe contamination from the side surface of the substrate support member located higher than the upper surface of the guide member, the upper limit of the height position difference is preferably set to 1.0 mm.
- the present invention is a method for heat-treating a silicon wafer using the vertical heat-treating boat, wherein the support auxiliary member is mounted on each of the plurality of support portions, and the substrate support member of the support auxiliary member.
- a silicon wafer heat treatment method characterized in that a silicon wafer is mounted thereon and heat treatment is performed.
- the heat treatment can be performed without bringing the back surface of the silicon wafer into contact with the oxide film formed on the surface of the support auxiliary member as in the prior art, and this causes the contact with the oxide film. It is possible to prevent the back surface of the silicon wafer from being rough. At the same time, the amount of Fe metal contamination transferred from the support auxiliary member to the surface of the substrate to be processed can be greatly reduced.
- the heat treatment of the silicon wafer can be performed at a temperature of 1100 to 1350 ° C.
- metal contamination due to Fe or the like becomes a problem, but since the metal contamination can be effectively suppressed with the heat treatment method of the present invention, in solving the problem. It is extremely effective.
- transfer of Fe contamination to a substrate to be processed such as a silicon wafer caused by a supporting auxiliary member during heat treatment and the wafer by the vertical heat treatment boat of the present invention and the silicon wafer heat treatment method using the boat. It is possible to manufacture a heat-treated wafer that suppresses both surface roughness on the back surface.
- a vertical heat treatment furnace is mainly used in which heat treatment is performed in a state where a large number of wafers are horizontally supported at predetermined intervals.
- a vertical heat treatment boat for setting a large number of wafers during this heat treatment is used.
- a slip may occur in the wafer after the heat treatment.
- the CVD-SiC coating is simply applied to the support part, and the surface thereof is very rough, and is supported by point contact when the wafer is placed on the support part. Because there are things. However, even if the rough surface with the CVD-SiC coating is polished, it is difficult and costly.
- this support auxiliary member is usually made of silicon carbide having high heat resistance as a whole. Furthermore, in order to prevent slipping, the surface of the support auxiliary member is mirror-finished to a smooth surface state.
- the support auxiliary member is contaminated with a high concentration of Fe particularly during the mirror finishing, and the Fe is transferred from the support auxiliary member to the wafer surface, causing the wafer to be contaminated with Fe.
- This Fe contamination can be reduced by covering the surface of the support auxiliary member with an oxide film.
- a new problem has occurred in the heat-treated wafer that the contact portion with the supporting auxiliary member whose surface is covered with an oxide film becomes rough.
- the present inventor divided the supporting auxiliary member for the vertical heat treatment boat into a substrate supporting member for supporting the substrate to be processed and a guide member for mounting the substrate supporting member on the supporting portion of the boat.
- the substrate support member is made of any one of silicon carbide, silicon, silicon carbide with silicon carbide CVD coating, silicon carbide with silicon carbide CVD coating, and silicon carbide with CVD coating.
- the guide member is quartz, silicon carbide provided with a silicon oxide film, silicon carbide provided with a silicon nitride film, silicon carbide provided with a silicon oxynitride film, silicon provided with a silicon oxide film,
- silicon carbide provided with a silicon oxide film By comprising either silicon with a silicon nitride film or silicon with a silicon oxynitride film, Fe contamination from the support auxiliary member to the wafer during heat treatment is reduced and the oxide film
- the present inventors have found that the roughness of the wafer back surface caused by contact can be reduced, and the present invention has been completed.
- FIG. 1 shows an example of a vertical heat treatment boat according to the present invention.
- the vertical heat treatment boat 1 includes four support columns 2 and a pair of plate-like members 3 connected to both ends of each support column 2 (these structures are referred to as a boat body 4).
- a plurality of slits 5 are formed at equal intervals in each support column 2, and convex portions between the slits 5 are exemplified by a substrate to be processed (here, a silicon wafer is taken as an example. , The present invention is not limited to this).
- the support auxiliary member 7 is attached to the support part 6 of each support
- the wafer is heat-treated, one wafer is placed on each of the auxiliary support members 7 mounted on the support portions 6 of the same height of the support columns 2.
- FIG. 2 shows an example of a support auxiliary member in the present invention.
- the support auxiliary member 7 includes a guide member 8 provided with guide means so that the support member 6 can be detachably attached to the boat 1 and a plate on which the silicon wafer is actually placed during heat treatment.
- the substrate support member 9 is provided.
- FIG. 2A shows a state where the support auxiliary member 7 is attached to the support portion 6.
- FIG. 2B shows the back side of the guide member.
- FIG. 2C shows a state where the guide member 8 and the substrate support member 9 are separated.
- FIG. 2D is a cross-sectional view of the support auxiliary member 7 when mounted on the support portion 6.
- the support portion 6 is made of silicon carbide and has a silicon oxide film on the surface
- the substrate support member 9 is made of silicon carbide (no surface oxide film)
- the guide member 8 is made of quartz. Is given as an example.
- the guide means is not particularly limited as long as the guide member 8 can be detachably attached to the support portion 6.
- the groove 10 may be formed on the lower surface of the guide member 8 (the surface on the side attached to the support portion 6).
- the groove 10 for mounting is formed so as to fit with the shape of the support portion 6 of the boat 1, and the guide member 8 can be mounted on the support portion 6 by fitting the support portion 6 in the groove 10. It has become. It is preferable to measure the shape of the support 6 in advance and form the groove 10 of the guide member 8 based on the measurement data.
- a hole 14 is formed in the upper surface 13 of the guide member 8.
- the shape of the hole 14 is not particularly limited as long as it is formed so that the substrate support member 9 can be inserted. It is preferably smaller than the outer shape of the guide member 8 and within the range in which the substrate support member 9 is completely covered by the silicon wafer during heat treatment.
- the shape is a similar shape or rectangular shape that is slightly smaller than the outer shape of the guide member. Can do.
- the depth of the hole 14 is not particularly limited, and the hole 14 may not be penetrated but may be grooved, or may be penetrated to the lower surface side as shown in FIG. As will be described later, the difference between the thickness of the substrate support member 9 and the height position of the upper surface 13 of the guide member 8 and the height position of the surface of the substrate support member 9 on which the silicon wafer is placed (mounting surface 15). Can be formed at an appropriate depth.
- the plate-like substrate support member 9 has a shape that can be inserted into the hole 14 on the upper surface 13 of the guide member 8 as described above.
- the shape is not particularly limited as long as it can be inserted into the hole 14.
- the silicon wafer of the substrate support member 9 is mounted on the substrate member 9 more than the height of the upper surface 13 of the guide member 8 when the guide member 8 and the substrate support member 9 are inserted into the holes 14 of the guide member 8.
- the height position of the mounting surface 15 is set to be higher (see FIG. 2D).
- the thickness of the guide member 8 and the substrate support member 9 can be such that the difference in height between the upper surface 13 and the mounting surface 15 is 0.05 to 1.0 mm. If the mounting surface 15 of the substrate support member 9 is made at least 0.05 mm higher than the upper surface 13 of the guide member 8, it is possible to more effectively avoid that the mounted silicon wafer directly contacts the guide member 8.
- silicon carbide, silicon, silicon carbide with silicon carbide CVD coating, silicon carbide with silicon carbide CVD coating, silicon carbide CVD It consists of one of the coated carbons. If it consists of such a material, it will become heat resistant and easy to process.
- the mounting surface 15 with which the silicon wafer is in direct contact is preferably mirror-polished from the viewpoint of slip prevention. In this respect, the ease of processing is effective.
- the substrate support member 9 in direct contact with the silicon wafer with a material other than quartz such as an oxide film, it is possible to reduce the roughness of the wafer back surface. Further, when the silicon wafer is placed, if the substrate support member 9 is not completely covered with the silicon wafer and protrudes, Fe contaminants are released from the protruding portion into the atmosphere.
- the shape and size of 9 are preferably those that are completely covered by the silicon wafer when the silicon wafer is placed.
- the material of the guide member 8 is quartz, silicon carbide provided with a silicon oxide film, silicon carbide provided with a silicon nitride film, silicon carbide provided with a silicon oxynitride film, or silicon oxide film. It is made of any one of silicon, silicon provided with a silicon nitride film, and silicon provided with a silicon oxynitride film.
- the vertical heat treatment boat 1 according to the present invention as shown in FIG. 2, only the portion (substrate support member 9) in the support auxiliary member 7 that is in direct contact with the silicon wafer can prevent the back surface of the wafer from being roughened. Therefore, an oxide film or the like is not applied, and the other portion (guide member 8) is provided with quartz or an oxide film to suppress contamination of Fe or the like to the silicon wafer. It has become. For this reason, it is possible to remarkably prevent metal contamination of the silicon wafer as compared with the conventional product, and to suppress the roughness of the back surface of the wafer after the heat treatment.
- the entire support auxiliary member is made of silicon carbide without an oxide film or the like, the silicon wafer is contaminated by Fe or the like from the surface. Further, if an oxide film or the like is applied to the entire surface, the rear surface of the wafer in contact with the oxide film will be roughened.
- the material of the boat main body 1 which consists of the four support
- These shapes and the like can be the same as, for example, the conventional one. According to the purpose, an appropriate material may be prepared so that the silicon wafer can be efficiently heat-treated.
- the heat treatment method of the present invention is performed using the vertical heat treatment boat 1 of the present invention as shown in FIGS.
- a support auxiliary member 7 is mounted on the support portion 6 of the boat body 4, and a silicon wafer is mounted on the mounting surface 15 of the substrate support member 9 of the support auxiliary member 7 to perform heat treatment.
- this heat treatment method of the present invention it is possible to perform a heat treatment in which the back surface of the silicon wafer is not roughened and Fe contamination is suppressed.
- it is not specifically limited except the above, For example, it can carry out in the same procedure as the conventional heat processing method.
- the temperature of the heat treatment is not particularly limited.
- the heat treatment can be performed at a temperature of 1100 to 1300 ° C. Even with such a high temperature heat treatment, the present invention is more effective in contaminating metal such as Fe than the conventional one. It is possible to suppress it.
- Example 1 By machining the four prismatic pillars as shown in FIG. 1, a pair of plate-like members connected to both ends of each pillar, and a boat body for vertical heat treatment having 100 wafer support parts on each pillar. Manufactured.
- Each wafer is supported by four support portions, and the two outer support portions (front side in FIG. 1) are 20 mm from the two inner support portions (back side in FIG. 1). It is getting longer.
- the support auxiliary member mounted on the support portion is a plate-like component (width 5 mm, length 40 mm (short) and 60 mm (long), thickness 1) as a substrate support member for supporting the wafer. 0.0 mm), and a guide member (width 10 .0) formed on the back side so as to prevent the substrate support member from dropping from the support portion of the vertical heat treatment boat.
- the substrate support member used was a SiC substrate coated with silicon carbide by CVD and mirror polished, and the guide member was quartz.
- the vertical heat treatment boat was cleaned with hydrofluoric acid, and then a support auxiliary member composed of the substrate support member and the guide member was mounted on the wafer support portion of the vertical heat treatment boat.
- the support auxiliary member was mounted, the upper surface of the substrate support member was 0.2 mm higher than the upper surface of the guide member.
- a substrate to be treated (a silicon wafer grown by the Czochralski method and having a plane orientation (100), a diameter of 200 mm, and a thickness of 725 ⁇ m) is placed, and the boat is introduced into a vertical heat treatment furnace. Heat treatment was performed at 1200 ° C. for 1 hour while supplying argon gas.
- the Fe concentration of the heat-treated silicon wafer measured by the SPV method has a maximum value of 6 ⁇ 10 11 atoms / cm 3 and an average value of 4 ⁇ 10 10 atoms / cm 3. It was within the range and was good. Moreover, the haze of the back surface of the heat-treated silicon wafer was measured. Using a SP-1 made by KLA TENCOR and measured under DWN mode High-Throughput conditions, the haze value around the contact portion with the wafer support auxiliary member was 0.06 ppm or less, and surface roughness did not occur. It was.
- Example 2 A boat body made of SiC similar to Example 1 was prepared, washed with hydrofluoric acid, and thermally oxidized to form a silicon oxide film having a thickness of about 500 nm. Then, a support auxiliary member composed of a substrate support member and a guide member similar to those in Example 1 was attached to the support portion of the boat body. After the mirror-polished silicon wafer was placed, the boat was introduced into a vertical heat treatment furnace, and as in Example 1, heat treatment was performed at 1200 ° C. for 1 hour while supplying argon gas into the furnace.
- the Fe concentration measured by the SPV method for the heat-treated silicon wafer has a maximum value of 3 ⁇ 10 11 atoms / cm 3 and an average value of 2 ⁇ 10 10 atoms / cm 3, which is a very low value.
- a high-quality annealed wafer in which Fe contamination was extremely suppressed could be obtained.
- the haze value around the contact portion with the wafer support auxiliary member on the back surface of the heat-treated silicon wafer was 0.06 ppm or less, and surface roughness did not occur.
- FIG. 3A shows a state where a support auxiliary member is attached to the support portion.
- FIG. 3B is a cross-sectional view of the support auxiliary member when mounted on the support portion.
- the support portion is made of silicon carbide, and a silicon oxide film is applied to the surface.
- the support auxiliary member is subjected to mirror polishing by applying SiC-CVD coating to SiC. .
- Example 2 In a boat body in which a silicon oxide film having a thickness of about 500 nm is formed in the same manner as in Example 2, the support auxiliary member is mounted on the support portion, a silicon wafer is placed thereon, and an argon gas is supplied. Heat treatment was performed at 1200 ° C. for 1 hour.
- the haze value and Fe contamination were measured in the same manner as in each example.
- the haze value around the contact portion with the supporting auxiliary member on the back surface of the heat-treated silicon wafer was 0.06 ppm or less, and surface roughness did not occur.
- the maximum value of the Fe concentration measured by the SPV method was 4 ⁇ 10 12 atoms / cm 3 and the average value was as high as 6 ⁇ 10 11 atoms / cm 3 .
- Comparative Example 2 In the boat body in which a silicon oxide film having a thickness of about 500 nm is formed in the same manner as in Example 2, a silicon wafer is placed on the support portion without supplying a support auxiliary member to the support portion, and argon gas is supplied. Then, heat treatment was performed at 1200 ° C. for 1 hour.
- the haze value and Fe contamination were measured in the same manner as in each example.
- the Fe concentration of the heat-treated silicon wafer measured by the SPV method had a maximum value of 2 ⁇ 10 11 atoms / cm 3 and an average value as low as 2 ⁇ 10 10 atoms / cm 3 .
- the haze value around the contact portion with the support portion on the back side of the silicon wafer was 0.5 ppm or more, and strong surface roughness occurred.
- the present invention is not limited to the above embodiment.
- the above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.
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Abstract
Description
しかし、熱処理ボートの支持部は薄く脆いため、機械等で面取り加工や研磨加工する際に破損が起こりやすいという問題がある。支持部を1つでも破損すると、ボート全体として不良品となってしまう。そのため、完全な鏡面に研磨するには手作業等で行う必要があるが、各支持部の面粗さにバラツキが出やすい上、全ての支持部を鏡面研磨するには多大な労力を必要とし、非常に高価なボートとなってしまう。
一方、支持補助部材に酸化膜を形成しない場合には、支持補助部材の側面から発生したFeが次段のウエーハ表面を汚染してしまうという問題があった。
このように、基板支持部材の被処理基板が載置される面の高さ位置と、ガイド部材の上面の高さ位置の差が0.05mm以上、すなわち、基板支持部材の被処理基板が載置される面(基板載置面)の高さ位置が、ガイド部材の上面の高さ位置よりも0.05mm以上高ければ、被処理基板が基板支持部材上に載置されたとき、被処理基板がガイド部材に直接接触するのを避けることができる。また、ガイド部材の上面よりも高くに位置する、基板支持部材の側面からのFe汚染を抑制するために、上記高さ位置の差の上限は1.0mmとするのが好ましい。
また、同時に、支持補助部材から被処理基板表面へのFeの金属汚染転写量を大幅に低減することが可能である。
このような高温の熱処理の場合、Fe等による金属汚染が問題となってくるが、本発明の熱処理方法であればその金属汚染を効果的に抑制することができるため、該問題を解決するにあたり極めて有効である。
大口径の半導体ウエーハ等の被処理基板に熱処理を施す場合、多数のウエーハを所定の間隔をあけて水平に支持した状態で熱処理を行う縦型の熱処理炉が主に用いられている。そして、この熱処理のときに多数のウエーハをセットするための縦型熱処理用ボートが用いられているが、従来のボートでは熱処理後のウエーハにスリップが発生することがあった。
図1に本発明の縦型熱処理用ボートの一例を示す。この縦型熱処理用ボート1は、4本の支柱2と、各支柱2の両端部に連結した一対の板状部材3とを有している(これらの構成をボート本体4とする)。各支柱2には、それぞれ同じ高さの位置に複数のスリット5(溝)が等間隔で形成されており、スリット5間の凸部が被処理基板(ここではシリコンウエーハを例に挙げる。ただし、本発明はこれに限定されない。)の支持部6として作用する。
そして、この本発明の熱処理用ボート1では、各支柱2の支持部6に支持補助部材7が着脱可能に装着されている。ウエーハを熱処理する際には、各支柱2の同じ高さの支持部6に装着した支持補助部材7上に各々1枚ずつウエーハが載置される。
例えば、図2(B)のように、ガイド部材8の下面(支持部6に装着している側の面)に溝10が形成されたものとすることができる。この装着のための溝10は、ボート1の支持部6の形状と嵌合するように形成されており、この溝10に支持部6を嵌めることによってガイド部材8を支持部6に装着可能になっている。予め支持部6の形状を測定しておき、その測定データに基づいてガイド部材8の溝10を形成すると良い。
基板支持部材9の載置面15をガイド部材8の上面13より少なくとも0.05mm高くすれば、載置されたシリコンウエーハが直接ガイド部材8に接触するのをより効果的に避けることができる。また、機械加工精度の面からもこの程度の差がある方が良い。
一方、基板支持部材9が厚すぎると該基板支持部材9の側面からのFe汚染が問題になりやすいため、出来るだけ薄くしたほうが好ましい。例えば上記差を1.0mm程度までとすることにより、基板支持部材9の側面からのFe汚染をより効果的に防ぐことが可能である。
このような材料からなるものであれば、耐熱性が高く加工もしやすいものとなる。シリコンウエーハが直接接触する載置面15は、スリップ防止の観点から鏡面研磨が施されているのが好ましく、この点において、上記加工のしやすさは有効である。
また、シリコンウエーハが載置されたときに基板支持部材9がシリコンウエーハで完全に覆われずに、はみ出していると、はみ出した部分から雰囲気中にFe汚染物が放出されるので、基板支持部材9の形状や大きさは、シリコンウエーハが載置されたときにシリコンウエーハによって完全に覆われるものが好ましい。
このようにガイド部材を石英または酸化膜等が形成された材料にすることで、ガイド部材8の表面からシリコンウエーハ表面へのFeによる汚染を抑制することができる。従って、全体として、ウエーハのFe汚染を低減することができる。
一方、従来品では、支持補助部材の全体が酸化膜等が施されていない炭化珪素からなるものであれば、その表面からのFe等によってシリコンウエーハが汚染されてしまう。また酸化膜等を全面に施したものであれば、これと接触するウエーハ裏面に荒れが生じてしまうこととなる。
本発明の熱処理方法では、図1、2に示すような本発明の縦型熱処理用ボート1を用いて行う。
ボート本体4の支持部6に支持補助部材7を装着し、支持補助部材7の基板支持部材9の載置面15上にシリコンウエーハを載置して熱処理を行う。この本発明の熱処理方法によって、シリコンウエーハの裏面を荒らすこともなくFe汚染も抑制された熱処理を行うことができる。
なお、上記以外は特に限定されず、例えば従来の熱処理方法と同様の手順で行うことができる。
(実施例1)
図1に示すような4本の角柱状の支柱、各支柱の両端部に連結した一対の板状部材、各支柱に100個のウエーハ支持部を有する縦型熱処理用のボート本体を機械加工により製造した。
なお、この熱処理用ボート本体の材質はSiCであり、表面には炭化珪素のCVDコーティングを施して表面粗さをRa=1μm程度としたものである。ウエーハは、1枚につき4箇所の支持部に支持されるようになっており、外側2箇所の支持部(図1の手前側)は内側2箇所の支持部(図1の奥側)より20mm程度長くなっている。
なお、支持補助部材を装着した時、基板支持部材の上面はガイド部材の上面より0.2mm高くなった。
また、前記熱処理されたシリコンウエーハの裏面のヘイズを測定した。KLA TENCOR社製のSP-1を用い、DWNモードのHigh-Throughput条件で測定したところ、前記ウエーハ支持補助部材との接触部周辺のヘイズ値は0.06ppm以下であり、面荒れは発生しなかった。
実施例1と同様の材質がSiCのボート本体を用意してフッ酸洗浄し、熱酸化することにより約500nm厚の酸化珪素膜を形成した。その上で、ボート本体の支持部に、実施例1と同様の基板支持部材とガイド部材からなる支持補助部材を装着した。
鏡面研磨されたシリコンウエーハを載置してから、ボートを縦型熱処理炉に導入し、実施例1と同様に、炉内にアルゴンガスを供給しながら1200℃で1時間の熱処理を行った。
また、前記熱処理されたシリコンウエーハの裏面における、前記ウエーハ支持補助部材との接触部周辺のヘイズ値は0.06ppm以下と、面荒れは発生しなかった。
支持補助部材として、本発明のように基板支持部材とガイド部材に分かれているものではなく、図3のような従来の一体型の支持補助部材を用意した。図3(A)は支持部に、支持補助部材が装着されている様子を示している。図3(B)は支持部に装着されたときの支持補助部材の断面図である。なお、図3(B)に示すように、支持部は炭化珪素製で表面に酸化珪素膜が施されており、支持補助部材はSiCにSiC-CVDコートをして鏡面研磨が施されている。
実施例2と同様にして約500nm厚の酸化珪素膜を形成したボート本体において、その支持部に上記支持補助部材を装着し、その上にシリコンウエーハを載置して、アルゴンガスを供給しながら1200℃で1時間の熱処理を行った。
熱処理されたシリコンウエーハ裏面の支持補助部材との接触部周辺のヘイズ値は0.06ppm以下と面荒れは発生しなかった。
しかしながら、SPV法により測定したFe濃度は、最大値が4×1012atoms/cm3であり、平均値が6×1011atoms/cm3と高い値になった。
実施例2と同様にして約500nm厚の酸化珪素膜を形成したボート本体において、その支持部に支持補助部材を装着しないで、支持部の上にシリコンウエーハを載置して、アルゴンガスを供給しながら1200℃で1時間の熱処理を行った。
熱処理されたシリコンウエーハをSPV法により測定したFe濃度は、最大値が2×1011atoms/cm3であり、平均値が2×1010atoms/cm3と低い値であった。
しかしながら、シリコンウエーハ裏面の支持部との接触部周辺のヘイズ値は0.5ppm以上と強い面荒れが発生した。
Claims (5)
- 少なくとも、複数の支柱と、各支柱の両端部に連結した一対の板状部材と、前記各支柱に被処理基板を水平に支持するための複数の支持部とを有するボート本体と、前記複数の支持部の各々に着脱可能に装着されており、前記被処理基板が載置される支持補助部材とを備えた縦型熱処理用ボートであって、
前記支持補助部材は、前記支持部に装着されるガイド部材と、該ガイド部材により定置され、前記被処理基板が載置される板状の基板支持部材とを有しており、
前記ガイド部材は上面に穴が形成されており、
前記基板支持部材は、前記ガイド部材の穴に挿嵌されて定置されており、前記支持補助部材がボート本体の支持部に装着されたとき、前記被処理基板が載置される面の高さ位置が、前記ガイド部材の上面の高さ位置よりも高いものであり、
前記基板支持部材は、炭化珪素、珪素、炭化珪素のCVDコーティングが施された炭化珪素、炭化珪素のCVDコーティングが施された珪素、炭化珪素のCVDコーティングが施された炭素のいずれかからなり、
前記ガイド部材は、石英、酸化珪素膜が施された炭化珪素、窒化珪素膜が施された炭化珪素、酸窒化珪素膜が施された炭化珪素、酸化珪素膜が施された珪素、窒化珪素膜が施された珪素、酸窒化珪素膜が施された珪素のいずれかからなるものであることを特徴とする縦型熱処理用ボート。
- 前記ボート本体は、石英、酸化珪素膜が施された炭化珪素、窒化珪素膜が施された炭化珪素、酸窒化珪素膜が施された炭化珪素、酸化珪素膜が施された珪素、窒化珪素膜が施された珪素、酸窒化珪素膜が施された珪素のいずれかからなるものであることを特徴とする請求項1に記載の縦型熱処理用ボート。
- 前記基板支持部材の被処理基板が載置される面の高さ位置と、前記ガイド部材の上面の高さ位置の差が、0.05~1.0mmであることを特徴とする請求項1または請求項2に記載の縦型熱処理用ボート。
- 請求項1から請求項3のいずれか一項に記載の縦型熱処理用ボートを用いてシリコンウエーハを熱処理する方法であって、
前記複数の支持部の各々に前記支持補助部材を装着し、該支持補助部材の基板支持部材上にシリコンウエーハを載置して熱処理を行うことを特徴とするシリコンウエーハの熱処理方法。
- 前記シリコンウエーハの熱処理を、1100~1350℃の温度で行うことを特徴とする請求項4に記載のシリコンウエーハの熱処理方法。
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US20110028005A1 (en) | 2011-02-03 |
US8287649B2 (en) | 2012-10-16 |
CN101990699A (zh) | 2011-03-23 |
JP5071217B2 (ja) | 2012-11-14 |
JP2009260055A (ja) | 2009-11-05 |
KR101537960B1 (ko) | 2015-07-20 |
TW201003833A (en) | 2010-01-16 |
CN101990699B (zh) | 2012-07-18 |
KR20100134010A (ko) | 2010-12-22 |
TWI416657B (zh) | 2013-11-21 |
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