WO2009122607A1 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- WO2009122607A1 WO2009122607A1 PCT/JP2008/069713 JP2008069713W WO2009122607A1 WO 2009122607 A1 WO2009122607 A1 WO 2009122607A1 JP 2008069713 W JP2008069713 W JP 2008069713W WO 2009122607 A1 WO2009122607 A1 WO 2009122607A1
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- WIPO (PCT)
- Prior art keywords
- semiconductor chip
- film
- thermosetting
- sealing resin
- circuit board
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 title description 16
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 85
- 229920005989 resin Polymers 0.000 claims abstract description 80
- 239000011347 resin Substances 0.000 claims abstract description 80
- 238000007789 sealing Methods 0.000 claims abstract description 67
- 239000002313 adhesive film Substances 0.000 claims abstract description 33
- 229920001971 elastomer Polymers 0.000 claims abstract description 16
- 238000003825 pressing Methods 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- 229920002050 silicone resin Polymers 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 230000009477 glass transition Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 7
- 239000010419 fine particle Substances 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000013329 compounding Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a method for manufacturing a semiconductor device in which a semiconductor chip on a circuit board is sealed with a resin.
- a semiconductor device in which a semiconductor chip on a circuit board is sealed with a resin is mounted on the circuit board with an adhesive (chip mounting process), and then the semiconductor chip is covered with a sealing resin sheet, which is rigid. It has been proposed to manufacture the semiconductor chip in two steps (sealing step) by using a roll press having a surface or an expensive vacuum press that is not a normal bonder (molding step) (Patent Document 1).
- the sealing resin must be heated and pressurized. Therefore, in the method of Patent Document 1, the heat at the molding process is applied to the connection portion between the circuit board and the semiconductor chip formed in the semiconductor chip mounting process. Since the pressure is applied again, there is a concern that damage such as peeling or displacement occurs in the connection portion, and the connection reliability is lowered. In addition, using an expensive device such as a vacuum press may increase the manufacturing cost of the semiconductor device.
- the present invention When manufacturing a semiconductor device in which a semiconductor chip on a circuit board is sealed with a resin, the present invention is relatively free from damage caused by heat or pressure at a connection portion between the circuit board and the semiconductor chip. It aims at enabling manufacture by a simple method.
- the present inventors have achieved this. After temporarily bonding the semiconductor chip to the circuit board, the semiconductor chip is covered with a sealing resin film having a predetermined thickness, and heated from the opposite side while being pressed with a rubber head having a predetermined range of rubber hardness.
- the present invention has been completed by finding out that mounting and sealing can be performed simultaneously.
- the present invention is a method of manufacturing a semiconductor device in which a semiconductor chip on a circuit board is sealed with a resin, A semiconductor chip is temporarily fixed to a circuit board via a thermosetting adhesive film, A sealing resin film having a release film and a thermosetting sealing resin layer having a thickness of 0.5 to 2 times the thickness of the semiconductor chip laminated on the temporarily fixed semiconductor chip , The thermosetting sealing resin layer is disposed so as to face the semiconductor chip side, By heating from the circuit board side while pressing with a rubber head having a rubber hardness of 5 to 100 from the release film side, the semiconductor chip is adhesively fixed to the circuit board and at the same time, the semiconductor chip is resin-sealed. There is provided a production method characterized by peeling off a release film on a surface.
- the mounting of a semiconductor chip on a circuit board and the sealing of the semiconductor chip are performed using a sealing resin film having a thermosetting sealing resin layer having a predetermined thickness. Since it is performed simultaneously by one thermocompression treatment, the connection portion formed between the circuit board and the semiconductor chip is not subjected to heating and pressing again after the connection. Therefore, damage such as peeling or displacement does not occur in the connection portion.
- FIG. 1A is an explanatory diagram of a part of the process of the manufacturing method of the present invention.
- FIG. 1B is an explanatory diagram of part of the steps of the manufacturing method of the present invention.
- FIG. 1C is an explanatory diagram of part of the steps of the manufacturing method of the present invention.
- FIG. 1D is an explanatory diagram of a part of the process of the manufacturing method of the present invention.
- the present invention is a method of manufacturing a semiconductor device in which a semiconductor chip on a circuit board is sealed with a resin. Each step of the manufacturing method will be described with reference to FIGS. 1A to 1D.
- thermosetting adhesive film 2 is temporarily fixed to a circuit board 1 via a thermosetting adhesive film 2. Specifically, the adhesive force of the thermosetting adhesive film 2 is temporarily attached to the circuit board 1, and the semiconductor chip 3 is further temporarily fixed thereon.
- circuit board 1 a glass epoxy circuit board, a glass circuit board, a flexible circuit board or the like widely used in semiconductor devices can be used.
- thermosetting adhesive film 2 an insulating thermosetting adhesive film that is widely used for fixing electronic components can be used, and a film mainly composed of an epoxy resin or an acrylic resin is preferably used. can do.
- the thermosetting adhesive film 2 preferably contains 20 to 50% by mass of an imidazole-based latent curing agent in terms of solid content.
- the thermosetting adhesive film 2 can be blended with known additives. In particular, in order to control the coefficient of linear expansion, it is possible to blend 10 to 60% by mass of fine particle silica in terms of solid content. preferable.
- the thickness of the thermosetting adhesive film 2 is usually 40 to 50 ⁇ m.
- the semiconductor chip 3 one having a performance corresponding to the application of the semiconductor device is used. For example, it is appropriately selected according to the application such as CPU, ROM, RAM, LED, and the like.
- the electrical connection between the semiconductor chip 3 and the circuit board 1 includes flip chip bonding using bumps formed on the back surface of the semiconductor chip 3, and between the semiconductor chip 3 and the connection terminal of the circuit board 1. Examples include flip chip bonding performed through solder balls.
- a sealing resin film 6 having a release film 4 and a thermosetting sealing resin layer 5 laminated thereon is thermally cured with respect to the temporarily fixed semiconductor chip 3.
- the mold sealing resin layer 5 is disposed so as to face the semiconductor chip 3 side.
- thermosetting sealing resin layer 5 a well-known thermosetting sealing resin can be used, Preferably, what mainly has an epoxy resin and an acrylic resin can be used.
- the thermosetting sealing resin preferably contains 20 to 50% by mass of an imidazole-based latent curing agent.
- the thermosetting sealing resin layer 5 can be blended with known additives. In particular, in order to control the coefficient of linear expansion, 10 to 60 mass% of solid silica is blended. It is preferable.
- the thickness of the thermosetting encapsulating resin layer 5 is usually 50 to 500 ⁇ m, but if it is thinner than the thickness of the semiconductor chip 3, the semiconductor chip 3 cannot be sufficiently sealed and may be exposed. If the thickness is too large, sufficient pressing cannot be performed and connection reliability becomes insufficient. Therefore, in the present invention, the thickness of the semiconductor chip 3 to be sealed is 0.3 to 2 times, preferably 1 to 2 times. To do.
- thermosetting sealing resin layer 5 of the sealing resin film 6 the linear expansion coefficient is Ae and the elastic modulus is Am, and for the thermosetting adhesive film 2, the linear expansion coefficient is Be and the elastic modulus is Bm. It is preferable that the following expressions (1) to (2) are satisfied.
- the numerical values at temperatures below the respective glass transition temperatures should be compared first. is there. This is because the environment normally used is a room temperature region. In this case, it is preferable that the numerical values at temperatures exceeding the glass transition temperature are compared, and the result also satisfies the relationship of the expressions (1) and (2). This is because a thermal history may be added when post-processing of a part is performed.
- the rubber head 7 needs to be made of a rubber that can be pressed while following the complicated surface irregularities of the target object to be pressed at the portion in contact with the target object. Specifically, it is preferably made of a resin having a rubber hardness (JIS S6050) of 5 to 100, more preferably 40 to 80. Examples of a resin having such a rubber hardness include a silicone resin and a fluorine resin from the viewpoint of heat resistance.
- the pressing force is usually 1 to 3 MPa.
- the heating stage 8 is usually preferably made of a material having good thermal conductivity such as stainless steel or ceramic that can be heated to 300 ° C.
- the temperature of the heating stage 8 is such a temperature that the thermosetting adhesive film 2 and the sealing resin film 6 are normally heated to 160 to 200 ° C.
- thermosetting sealing resin layer 5 and the thermosetting adhesive film 2 are already cured.
- the circuit board for evaluation used in the following Examples or Comparative Examples has a thickness of 12 ⁇ m with a surface of nickel / gold plating, “0.3 mm ⁇ 38 mm ⁇ 38 mm in size with copper wiring formed.
- the semiconductor chip for evaluation is a silicon chip having a size of 200 ⁇ m ⁇ 6.3 mm ⁇ 6.3 mm provided with gold stud bumps (160 pins).
- thermosetting Adhesive Film A Mixture of 50 parts by mass of epoxy resin (jER828, Japan Epoxy Resin Co., Ltd.), 100 parts by mass of latent curing agent (HX3941HP, Asahi Kasei Chemicals Co., Ltd.), and 50 parts by mass of fine-particle silica (Tatsumori)
- a thermosetting adhesive composition prepared by dissolving and dispersing in toluene so that the solid content is 50% by mass is dried on a polyethylene terephthalate (PET) film (Tosero Co., Ltd.) having a thickness of 50 ⁇ m.
- PET polyethylene terephthalate
- thermosetting adhesive film A was prepared by applying the film to a thickness of 45 ⁇ m and drying at 80 ° C.
- the elastic modulus Bm was 5 GPa.
- the linear expansion coefficient Be1 below the glass transition temperature (20 to 40 ° C. region) was 30 ppm.
- the linear expansion coefficient Be2 at a temperature exceeding the glass transition temperature (160 to 190 ° C. region) was 110 ppm.
- thermosetting adhesive film B was prepared in the same manner as in Reference Example 1 except that the compounding amount of the fine particle silica was changed from 50 parts by mass to 30 parts by mass.
- the elastic modulus Bm was 3.5 GPa.
- the linear expansion coefficient Be1 below the glass transition temperature (20 to 40 ° C. region) was 52 ppm.
- the linear expansion coefficient Be2 at a temperature exceeding the glass transition temperature (160 to 190 ° C. region) was 145 ppm.
- thermosetting adhesive film C was prepared in the same manner as in Reference Example 1 except that the compounding amount of the fine particle silica was changed from 50 parts by mass to 0 parts by mass.
- the elastic modulus Bm was 1.6 GPa.
- the linear expansion coefficient Be1 below the glass transition temperature (20 to 40 ° C. region) was 66 ppm.
- the linear expansion coefficient Be2 at a temperature exceeding the glass transition temperature (160 to 190 ° C. region) was 187 ppm.
- thermosetting adhesive film D was prepared in the same manner as in Reference Example 1 except that the compounding amount of the fine particle silica was changed from 50 parts by mass to 80 parts by mass.
- the elastic modulus Bm was 8 GPa.
- the linear expansion coefficient Be1 below the glass transition temperature (20-40 ° C. region) was 22 ppm.
- the linear expansion coefficient Be2 at a temperature exceeding the glass transition temperature (160 to 190 ° C. region) was 69 ppm.
- thermosetting adhesive composition obtained by dissolving and dispersing in a toluene so that the solid content is 50% by mass is applied to a 50 ⁇ m-thick PET film (East Cello Co., Ltd.) which has been subjected to a release treatment with a dry thickness of 50 ⁇ m.
- thermosetting encapsulating resin film 1 was prepared by applying the coating and drying at 80 ° C.
- the elastic modulus Am was 5 GPa.
- the linear expansion coefficient Ae1 below the glass transition temperature (20 to 40 ° C. region) was 30 ppm.
- the linear expansion coefficient Ae2 at a temperature exceeding the glass transition temperature (160 to 190 ° C. region) was 110 ppm.
- thermosetting encapsulating resin film 2 was prepared in the same manner as in Reference Example 5 except that the thermosetting adhesive composition was applied to a dry thickness of 100 ⁇ m.
- the elastic modulus Am, the linear expansion coefficient Ae1, and the linear expansion coefficient Ae2 were the same as those of the thermosetting sealing resin film 1 of Reference Example 5.
- thermosetting encapsulating resin film 3 was prepared in the same manner as in Reference Example 5 except that the thermosetting adhesive composition was applied to a dry thickness of 200 ⁇ m.
- the elastic modulus Am, the linear expansion coefficient Ae1, and the linear expansion coefficient Ae2 were the same as those of the thermosetting sealing resin film 1 of Reference Example 5.
- thermosetting encapsulating resin film 4 was prepared in the same manner as in Reference Example 5 except that the thermosetting adhesive composition was applied to a dry thickness of 300 ⁇ m.
- the elastic modulus Am, the linear expansion coefficient Ae1, and the linear expansion coefficient Ae2 were the same as those of the thermosetting sealing resin film 1 of Reference Example 5.
- thermosetting encapsulating resin film 5 was prepared in the same manner as in Reference Example 5 except that the thermosetting adhesive composition was applied to a dry thickness of 500 ⁇ m.
- the elastic modulus Am, the linear expansion coefficient Ae1, and the linear expansion coefficient Ae2 were the same as those of the thermosetting sealing resin film 1 of Reference Example 5.
- thermosetting encapsulating resin film 6 was prepared in the same manner as in Reference Example 7 except that the compounding amount of the fine particle silica was changed from 50 parts by mass to 0 parts by mass.
- the elastic modulus Am was 1.6 GPa
- the linear expansion coefficient Ae1 was 66 ppm
- the linear expansion coefficient Ae2 was 187 ppm.
- thermosetting adhesive film A of Reference Example 1 is attached to the circuit board for evaluation, the release film is peeled off, the semiconductor chip for evaluation is aligned and temporarily fixed thereon, and the heat of Reference Example 6 is further removed.
- the semiconductor chip was mounted on the circuit board and sealed at the same time by covering with the curable sealing resin film 2 and pressing with a silicon rubber head while heating from below. Finally, the release film on the surface was peeled off to obtain the semiconductor device of Example 1.
- the press conditions were 180 ° C., 20 seconds, and 2.5 MPa.
- Example 2 A semiconductor device of Example 2 is obtained in the same manner as Example 1 except that the thermosetting sealing resin film 4 of Reference Example 8 is used instead of the thermosetting sealing resin film 2 of Reference Example 6. It was.
- Example 3 instead of the thermosetting adhesive film A of Reference Example 1, the thermosetting adhesive film B of Reference Example 2 is used, and instead of the thermosetting sealing resin film 2 of Reference Example 6, the heat of Reference Example 7 is used.
- a semiconductor device of Example 3 was obtained in the same manner as Example 1 except that the curable encapsulating resin film 3 was used.
- Example 4 A semiconductor device of Example 4 was obtained in the same manner as Example 3 except that the thermosetting adhesive film C of Reference Example 3 was used instead of the thermosetting adhesive film A of Reference Example 1.
- Example 5 instead of the thermosetting adhesive film A of Reference Example 1, the thermosetting adhesive film D of Reference Example 4 is used, and instead of the thermosetting sealing resin film 2 of Reference Example 6, the heat of Reference Example 10 is used.
- a semiconductor device of Example 5 was obtained in the same manner as Example 1 except that the curable encapsulating resin film 6 was used.
- thermosetting adhesive film A of Reference Example 1 was attached to the circuit board for evaluation, the release film was peeled off, and the circuit board was heated and pressed under the conditions of 180 ° C., 20 seconds, 2.5 MPa.
- a semiconductor chip was mounted and bonded to the substrate. Thereafter, the semiconductor chip was potted and sealed using a liquid resin for sealing (Matsushita Electric Works Co., Ltd.) and heated at 150 ° C. for 3 hours in a heating circulation type open to obtain the semiconductor device of Comparative Example 1. .
- Comparative Example 2 A semiconductor device of Comparative Example 2 was obtained in the same manner as Example 1 except that the thermosetting sealing resin film 1 of Reference Example 5 was used instead of the thermosetting sealing resin film 2 of Reference Example 6. It was.
- Comparative Example 3 A semiconductor device of Comparative Example 3 was obtained in the same manner as Example 1 except that the thermosetting sealing resin film 5 of Reference Example 9 was used instead of the thermosetting sealing resin film 2 of Reference Example 6. It was.
- the conduction resistance value (m ⁇ ) between the circuit board and the semiconductor chip was measured before (initial) and after (initial) and after moisture absorption / reflow by the four-terminal method (40 channels / sample). After standing in 85 ° C.-85% RH for 24 hours, measurement was performed at 265 ° C. (MAX) solder reflow (one pass) to confirm electrical connection. Insulation resistance value ( ⁇ ) was measured by daisy chain method before moisture absorption / reflow (initial) and after (left in 85 ° C-85% RH for 24 hours and then one pass for solder reflow at 265 ° C (MAX)). , Confirmed the insulation. The obtained results are shown in Table 1. The appearance after moisture absorption and reflow was visually observed. The obtained results are shown in Table 1.
- thermosetting sealing resin layer is within the range of 0.3 to 2 times the thickness of the semiconductor chip, the conduction resistance, insulation resistance, appearance It can be seen that good results were obtained for each evaluation item.
- Comparative Example 1 since the mounting and sealing of the semiconductor chip are not performed at the same time, electrical conduction after moisture absorption and reflow cannot be obtained.
- Comparative Example 2 since the thermosetting sealing resin layer thickness was less than 0.3 of the semiconductor chip thickness, the semiconductor chip could not be completely sealed.
- thermosetting sealing resin layer thickness exceeded twice the semiconductor chip thickness, it was found that sufficient pressing could not be performed and electrical conduction could not be obtained.
- the mounting of a semiconductor chip on a circuit board and the sealing of the semiconductor chip are performed using a sealing resin film having a thermosetting sealing resin layer having a predetermined thickness. Since it is performed simultaneously by one thermocompression treatment, the connection portion formed between the circuit board and the semiconductor chip is not subjected to heating and pressing again after the connection. Therefore, the process can be shortened and the yield can be improved. Therefore, the present invention is useful as a method for manufacturing a semiconductor device.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
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Abstract
Description
回路基板に熱硬化型接着フィルムを介して半導体チップを仮固定し、
仮固定された半導体チップに対し、離型フィルムとその上に積層され、該半導体チップの厚みの0.5~2倍の層厚の熱硬化型封止樹脂層とを有する封止樹脂フィルムを、該熱硬化型封止樹脂層が半導体チップ側に面するように配置し、
離型フィルム側からゴム硬度5~100のゴムヘッドで加圧しながら回路基板側から加熱することにより、回路基板に半導体チップを接着固定すると同時に半導体チップを樹脂封止し、
表面の離型フィルムを引き剥がす
ことを特徴とする製造方法を提供する。
2 熱硬化型接着フィルム
3 半導体チップ
4 離型フィルム
5 熱硬化型封止樹脂層
6 封止樹脂フィルム
7 ゴムヘッド
8 加熱ステージ
エポキシ樹脂(jER828、ジャパンエポキシレジン(株))50質量部と、潜在性硬化剤(HX3941HP、旭化成ケミカルズ(株))100質量部と、微粒子シリカ((株)龍森)50質量部との混合物を、固形分が50質量%となるようにトルエンに溶解・分散させてなる熱硬化型接着組成物を、剥離処理された50μm厚のポリエチレンテレフタレート(PET)フィルム(東セロ(株))に、乾燥厚で45μmとなるように塗布し80℃で乾燥することにより、熱硬化型接着フィルムAを作成した。弾性率Bmは5GPaであった。また、ガラス転移温度未満(20~40℃領域)での線膨脹係数Be1は30ppmであった。ガラス転移温度を超える温度(160~190℃領域)での線膨脹係数Be2は110ppmであった。
微粒子シリカの配合量を50質量部から30質量部に代えること以外は、参考例1と同様にして熱硬化型接着フィルムBを作成した。弾性率Bmは3.5GPaであった。また、ガラス転移温度未満(20~40℃領域)での線膨脹係数Be1は52ppmであった。ガラス転移温度を超える温度(160~190℃領域)での線膨脹係数Be2は145ppmであった。
微粒子シリカの配合量を50質量部から0質量部に代えること以外は、参考例1と同様にして熱硬化型接着フィルムCを作成した。弾性率Bmは1.6GPaであった。また、ガラス転移温度未満(20~40℃領域)での線膨脹係数Be1は66ppmであった。ガラス転移温度を超える温度(160~190℃領域)での線膨脹係数Be2は187ppmであった。
微粒子シリカの配合量を50質量部から80質量部に代えること以外は、参考例1と同様にして熱硬化型接着フィルムDを作成した。弾性率Bmは8GPaであった。また、ガラス転移温度未満(20~40℃領域)での線膨張係数Be1は22ppmであった。ガラス転移温度を超える温度(160~190℃領域)での線膨張係数Be2は69ppmであった。
エポキシ樹脂(jER828、ジャパンエポキシレジン(株))50質量部と、潜在性硬化剤(HX3941HP、旭化成ケミカルズ(株))100質量部と、微粒子シリカ((株)龍森)50質量部との混合物を、固形分が50質量%となるようにトルエンに溶解・分散させてなる熱硬化型接着組成物を、剥離処理された50μm厚のPETフィルム(東セロ(株))に、乾燥厚で50μmとなるように塗布し80℃で乾燥することにより、熱硬化型封止樹脂フィルム1を作成した。弾性率Amは5GPaであった。また、ガラス転移温度未満(20~40℃領域)での線膨脹係数Ae1は30ppmであった。ガラス転移温度を超える温度(160~190℃領域)での線膨脹係数Ae2は110ppmであった。
熱硬化型接着組成物を乾燥厚で100μmとなるように塗布すること以外は、参考例5を同様にして熱硬化型封止樹脂フィルム2を作成した。弾性率Am、線膨脹係数Ae1、線膨脹係数Ae2は、参考例5の熱硬化型封止樹脂フィルム1と同じであった。
熱硬化型接着組成物を乾燥厚で200μmとなるように塗布すること以外は、参考例5を同様にして熱硬化型封止樹脂フィルム3を作成した。弾性率Am、線膨脹係数Ae1、線膨脹係数Ae2は、参考例5の熱硬化型封止樹脂フィルム1と同じであった。
熱硬化型接着組成物を乾燥厚で300μmとなるように塗布すること以外は、参考例5を同様にして熱硬化型封止樹脂フィルム4を作成した。弾性率Am、線膨脹係数Ae1、線膨脹係数Ae2は、参考例5の熱硬化型封止樹脂フィルム1と同じであった。
熱硬化型接着組成物を乾燥厚で500μmとなるように塗布すること以外は、参考例5を同様にして熱硬化型封止樹脂フィルム5を作成した。弾性率Am、線膨脹係数Ae1、線膨脹係数Ae2は、参考例5の熱硬化型封止樹脂フィルム1と同じであった。
微粒子シリカの配合量を50質量部から0質量部に代えること以外は、参考例7と同様にして熱硬化型封止樹脂フィルム6を作成した。弾性率Amは1.6GPa、線膨脹係数Ae1は66ppm、線膨脹係数Ae2は187ppmであった。
参考例1の熱硬化型接着フィルムAを、評価用の回路基板に貼り付け、離型フィルムを剥がし、その上に評価用の半導体チップを位置合わせして仮固定し、更に参考例6の熱硬化型封止樹脂フィルム2を被せ、下から加熱しながら、シリコンゴムヘッドで加圧プレスすることにより、回路基板への半導体チップの実装と封止とを同時に行った。最後に表面の離型フィルムを剥がすことにより実施例1の半導体装置を得た。なお、プレス条件は、180℃、20秒、2.5MPaであった。
参考例6の熱硬化型封止樹脂フィルム2に代えて、参考例8の熱硬化型封止樹脂フィルム4を使用すること以外は、実施例1と同様にして実施例2の半導体装置を得た。
参考例1の熱硬化型接着フィルムAに代えて、参考例2の熱硬化型接着フィルムBを使用し、且つ参考例6の熱硬化型封止樹脂フィルム2に代えて、参考例7の熱硬化型封止樹脂フィルム3を使用すること以外は、実施例1と同様にして実施例3の半導体装置を得た。
参考例1の熱硬化型接着フィルムAに代えて、参考例3の熱硬化型接着フィルムCを使用すること以外は、実施例3と同様にして実施例4の半導体装置を得た。
参考例1の熱硬化型接着フィルムAに代えて、参考例4の熱硬化型接着フィルムDを使用し、且つ参考例6の熱硬化型封止樹脂フィルム2に代えて、参考例10の熱硬化型封止樹脂フィルム6を使用すること以外は、実施例1と同様にして実施例5の半導体装置を得た。
参考例1の熱硬化型接着フィルムAを、評価用の回路基板に貼り付け、離型フィルムを剥がし、そのまま180℃、20秒、2.5MPaの条件で加熱、加圧を行うことにより回路基板に半導体チップを実装接合した。その後、封止用液状樹脂(松下電工(株))を用いて半導体チップをポッティング封止し、加熱循環式オープン中で150℃で3時間加熱することにより、比較例1の半導体装置を得た。
参考例6の熱硬化型封止樹脂フィルム2に代えて、参考例5の熱硬化型封止樹脂フィルム1を使用すること以外は、実施例1と同様にして比較例2の半導体装置を得た。
参考例6の熱硬化型封止樹脂フィルム2に代えて、参考例9の熱硬化型封止樹脂フィルム5を使用すること以外は、実施例1と同様にして比較例3の半導体装置を得た。
各実施例及び比較例で得られた半導体装置について、回路基板と半導体チップとの間の導通抵抗値(mΩ)を4端子法(40チャンネル/サンプル)により吸湿・リフロー前(初期)と後(85℃-85%RH中に24時間放置後、265℃(MAX)のハンダリフローにワンパス)に測定し、電気的接合を確認した。また、絶縁抵抗値(Ω)をデイジーチェーン法により吸湿・リフロー前(初期)と後(85℃-85%RH中に24時間放置後、265℃(MAX)のハンダリフローにワンパス)に測定し、絶縁性を確認した。得られた結果を表1に示す。また、吸湿・リフロー後の外観を目視観察した。得られた結果を表1に示す。
Claims (5)
- 回路基板上の半導体チップが樹脂封止されている半導体装置の製造方法であって、
回路基板に熱硬化型接着フィルムを介して半導体チップを仮固定し、
仮固定された半導体チップに対し、離型フィルムとその上に積層され、該半導体チップの厚みの0.3~2倍の層厚の熱硬化型封止樹脂層とを有する封止樹脂フィルムを、該熱硬化型封止樹脂層が半導体チップ側に面するように配置し、
離型フィルム側からゴム硬度5~100のゴムヘッドで加圧しながら回路基板側から加熱することにより、回路基板に半導体チップを接着固定すると同時に半導体チップを樹脂封止し、
表面の離型フィルムを引き剥がす
ことを特徴とする製造方法。 - 封止樹脂フィルムの熱硬化型封止樹脂層及び接着フィルムが、エポキシ樹脂またはアクリル樹脂から構成されている請求項1又は2記載の製造方法。
- 該ゴムヘッドが、シリコーン樹脂から構成されている請求項1~3のいずれかに記載の製造方法。
- 請求項1記載の製造方法により製造された半導体装置。
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JP2012054270A (ja) * | 2010-08-31 | 2012-03-15 | Toyoda Gosei Co Ltd | 発光装置の製造方法 |
US8148210B1 (en) * | 2010-09-13 | 2012-04-03 | Infineon Technologies Ag | Method for fabricating a semiconductor chip panel |
CN102254837A (zh) * | 2011-04-29 | 2011-11-23 | 永道无线射频标签(扬州)有限公司 | 电子标签倒贴片封装生产线封装工艺 |
JP6051630B2 (ja) | 2011-07-13 | 2016-12-27 | 味の素株式会社 | 半導体パッケージ |
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JP6897620B2 (ja) * | 2018-03-30 | 2021-06-30 | 株式会社オートネットワーク技術研究所 | ワイヤハーネス |
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