WO2009088000A1 - 配線基板、半導体装置及びそれらの製造方法 - Google Patents
配線基板、半導体装置及びそれらの製造方法 Download PDFInfo
- Publication number
- WO2009088000A1 WO2009088000A1 PCT/JP2009/050046 JP2009050046W WO2009088000A1 WO 2009088000 A1 WO2009088000 A1 WO 2009088000A1 JP 2009050046 W JP2009050046 W JP 2009050046W WO 2009088000 A1 WO2009088000 A1 WO 2009088000A1
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- Prior art keywords
- layer
- insulating layer
- wiring
- terminal
- wiring board
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 171
- 238000000034 method Methods 0.000 title claims description 136
- 238000004519 manufacturing process Methods 0.000 title claims description 48
- 239000000758 substrate Substances 0.000 claims description 98
- 229910052751 metal Inorganic materials 0.000 claims description 76
- 239000002184 metal Substances 0.000 claims description 76
- 229910000679 solder Inorganic materials 0.000 claims description 53
- 229920005989 resin Polymers 0.000 claims description 20
- 239000011347 resin Substances 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 16
- 238000009713 electroplating Methods 0.000 claims description 15
- 238000005498 polishing Methods 0.000 claims description 12
- 239000011810 insulating material Substances 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 455
- 239000000463 material Substances 0.000 description 79
- 239000010408 film Substances 0.000 description 40
- 239000010949 copper Substances 0.000 description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 33
- 239000011368 organic material Substances 0.000 description 32
- 229920001721 polyimide Polymers 0.000 description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 31
- 229910052802 copper Inorganic materials 0.000 description 29
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 29
- 229910052737 gold Inorganic materials 0.000 description 29
- 239000010931 gold Substances 0.000 description 29
- 230000035882 stress Effects 0.000 description 29
- 239000004925 Acrylic resin Substances 0.000 description 28
- 229920002577 polybenzoxazole Polymers 0.000 description 28
- 239000009719 polyimide resin Substances 0.000 description 27
- 230000008569 process Effects 0.000 description 25
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 20
- 238000007772 electroless plating Methods 0.000 description 20
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 18
- 238000007639 printing Methods 0.000 description 18
- 229910045601 alloy Inorganic materials 0.000 description 16
- 239000000956 alloy Substances 0.000 description 16
- 239000003822 epoxy resin Substances 0.000 description 16
- 239000004745 nonwoven fabric Substances 0.000 description 16
- 229920000647 polyepoxide Polymers 0.000 description 16
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 16
- 239000002759 woven fabric Substances 0.000 description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 15
- 229910052759 nickel Inorganic materials 0.000 description 15
- 229910052709 silver Inorganic materials 0.000 description 15
- 239000004332 silver Substances 0.000 description 15
- 239000005011 phenolic resin Substances 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 12
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 12
- 239000004645 polyester resin Substances 0.000 description 12
- 229920001225 polyester resin Polymers 0.000 description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 11
- -1 for example Substances 0.000 description 11
- 229910052718 tin Inorganic materials 0.000 description 11
- 239000011135 tin Substances 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 239000012790 adhesive layer Substances 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 229910052763 palladium Inorganic materials 0.000 description 9
- 238000007747 plating Methods 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 8
- 238000010030 laminating Methods 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- 239000000654 additive Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000000696 magnetic material Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229920006231 aramid fiber Polymers 0.000 description 6
- 239000004744 fabric Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910020684 PbZr Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 238000007766 curtain coating Methods 0.000 description 4
- 238000007607 die coating method Methods 0.000 description 4
- 230000006355 external stress Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000010406 interfacial reaction Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000003351 stiffener Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4647—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits by applying an insulating layer around previously made via studs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4682—Manufacture of core-less build-up multilayer circuits on a temporary carrier or on a metal foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Definitions
- the present invention relates to a wiring board on which a semiconductor element is mounted, a semiconductor device in which the semiconductor element is mounted on the wiring board, and a method of manufacturing them, particularly, a thin wiring board excellent in high-speed transmission characteristics and mounting reliability, a semiconductor device It relates to their manufacturing method.
- a substrate having through holes such as a built-up substrate is generally used, but such a substrate is thick, and furthermore, it is unsuitable for high-speed signal transmission due to the presence of the through holes.
- thin substrates such as tape substrates are also used for wiring substrates
- the wiring layer is limited to a single layer or two layers depending on the manufacturing method, or the expansion and contraction of the tape substrate is large, so the positional accuracy of the pattern is a build Since it is inferior to the up substrate, it can not meet the recent demand for higher density.
- a coreless board in which a wiring structure or the like is formed on a support substrate prepared in advance, and the support substrate is removed or separated after forming the wiring structure to form through holes.
- a base layer and a metal foil are stacked on a prepreg to be a support substrate, a buildup wiring layer is formed on the metal foil, and then the peripheral portion of the base layer is cut to separate the metal foil. It is disclosed that a wiring member having a buildup wiring layer to be a coreless substrate is obtained.
- Patent Document 2 discloses that a multilayer wiring structure is formed using a metal foil as a support substrate, and the circuit element is mounted and then the metal foil is etched away to obtain a semiconductor device having the circuit element mounted on a coreless substrate. ing.
- the first wiring layer is formed on the support substrate, the semiconductor element is mounted on one surface of the first wiring layer, and then the support substrate is removed, and then one surface of the first wiring layer is It is disclosed that a second wiring layer is formed on the opposite surface to obtain a semiconductor device.
- Patent Document 4 discloses a structure in which a stress between a semiconductor element and a multilayer wiring board is relieved by a metal column disposed between terminals.
- Patent Document 1-4 The entire disclosure of Patent Document 1-4 above is incorporated herein by reference. The following analysis is given by the present invention.
- the conventional wiring substrate has the following problems.
- Patent Document 1 since a via is formed on an external connection pad, a stress is generated by mounting a semiconductor element on a wiring board or mounting the wiring board on a system board such as a motherboard, and such a stress is generated. Concentrate on the connection interface between the external connection pad and the via.
- the connection interface with the via is a portion where the adhesion is lower than the individual portions configured as the electrode, the wiring, and further the via, and the portion is easily broken.
- the structure described in Patent Document 1 is affected by the thickness of the wiring layer and the insulating layer, and the pattern shape of the wiring layer having rigidity higher than that of the insulating layer, and the deformation amount and the movement amount in each wiring layer and the insulating layer are different.
- the via structure described in Patent Document 1 has a structure in which a connection interface of vias is provided at a portion where stress concentrates, and when mounting a semiconductor element on a wiring board or mounting a wiring board on a mother board or the like, connection is made. The risk of breakage at the interface is increased.
- Patent Document 2 a connection interface between a wiring layer connected to an external terminal and a via that connects the upper wiring layer is disposed on the external terminal side. This is because, as in the state described in Patent Document 1, when a semiconductor element is mounted on a wiring board or a wiring board is mounted on a mother board or the like, generated stress is concentrated on the connection interface of vias, and the risk of breakage is caused. Sex is high.
- Patent Document 4 a protruding metal column which is easily deformed is provided to relieve stress due to mounting of a semiconductor element, but in the same manner as in Patent Document 1, a wire and an electrode are provided at a site where stress is concentrated. There is a connection interface between the two and there is a high risk of breakage.
- a main object of the present invention is to provide a highly reliable wiring board which secures connection reliability in vias.
- an insulating layer and a wiring layer are alternately stacked, and the wiring layer is electrically connected by a via, and the wiring layer is provided on the first surface and the insulating layer.
- a second terminal provided on the second surface opposite to the first surface and embedded in the insulating layer, provided in the insulating layer and in contact with the first terminal
- a via electrically connecting between the land and the wiring layer provided via the insulating layer has no connection interface at the end on the land side, and the wiring A connection interface is present at the end on the layer side.
- semiconductor elements are mounted on one side or both sides of the wiring board.
- a first step of forming a first insulating layer having an opening on a support, and a second step of forming a first terminal in the opening A third step of forming a wiring layer and a metal post serving as a via on the first insulating layer and the first terminal, the first insulating layer, the wiring layer, and the metal post. Forming a second insulating layer and polishing the surface of the second insulating layer until the metal post is exposed; and the third step and the fourth step on the second insulating layer. And forming a multilayer wiring layer alternately, and forming a multilayer wiring layer, and removing the support.
- a first step of forming a first insulating layer having an opening on a support, and a second step of forming a first terminal in the opening A third step of forming a wiring layer and a metal post serving as a via on the first insulating layer and the first terminal, the first insulating layer, the wiring layer, and the metal post. Forming a second insulating layer and polishing the surface of the second insulating layer until the metal post is exposed; and the third step and the fourth step on the second insulating layer. And the sixth step of mounting the semiconductor element, and the seventh step of removing the support.
- connection interface at the boundary with the surface-side wiring where stress concentrates, and by having a connection interface at the boundary with the substrate inner-side wiring From the stress generated after the substrate is mounted on the semiconductor element or the mother board, the disconnection of the thin wiring board can be effectively avoided, and the connection reliability in the via can be secured.
- the deformation direction is the shape of the wiring layer and the insulating layer Because the adhesion area of the wiring layer to the insulating layer is different, stress generated by mounting the wiring board on the semiconductor element or the motherboard is concentrated in the via, and in particular, the insulating layer covers three sides of the wiring layer Stress concentration occurs at the boundary between the vias provided inside and the wiring layer surrounded by the insulating layer.
- the insulating layer and the wiring layer are in close contact with each other.
- stress concentration on the connection interface between the via and the wiring layer can be effectively avoided, and stable high connection reliability can be achieved. It can be secured. This effect is because the insulating layer is corrected to the wiring layer which is in contact with one side by the adhesion layer, so that the same deformation can be made in the adhesion area including the bonding interface of the via.
- the wiring layer has an adhesion layer between the wiring layer and the insulating layer in contact with the first surface side, whereby the binding force of the wiring layer to the insulating layer is increased, and the adhesion layer is formed.
- An insulating layer in the vicinity of the wiring layer via the wiring layer can be made to follow the wiring layer.
- the stress concentrated on the terminals can be effectively relieved by the insulating layer, and the reliability of the connection can be improved.
- connection with a pitch of 40 ⁇ m or less can be facilitated, and a gap that enables injection of an underfill or the like can be secured.
- the second terminal is recessed, there is an effect of improving the positional accuracy at the connection portion and as a solder dam.
- the insulating layer that embeds the first terminal and the second terminal and the insulating layer inside are made of different materials, so that the material of the terminal portion is mainly stress relaxation, and the material inside the insulating layer is high in mechanical strength. Can be used to realize a structure in which a crack does not occur in the insulating layer, so that a wiring board with high long-term reliability can be realized.
- the semiconductor elements mounted on both sides of the wiring substrate can be connected by the shortest distance by manufacturing the wiring substrate thin, performance can be improved.
- FIG. 14 is a third process cross-sectional view schematically showing a method of manufacturing a wiring board according to Example 6 of the present invention.
- wiring board 12 first surface 13 second surface 14 first terminal 15 second terminal (metal post) 16 land (wiring layer) 17 Wiring Layers 18, 18a, 18b, 18c Insulating Layers 19 Vias (Metal Post) 20 correction area 21 adhesion layer (feed layer) 22, 22a, 22b semiconductor element 23a, 23b solder 24a, 24b underfill 25 solder ball 26 adhesive 27 bonding wire 28 conductive film 30 resist 31 mold 32 stress concentration area 33 support
- insulating layers (18 in FIG. 1) and wiring layers (17 in FIG. 1) are alternately stacked, and vias (FIG. 1) are formed between the wiring layers (17 in FIG. 1).
- connection interface there is no connection interface at the end on the land (16 in FIG. 1) end of the via (19 in FIG. 1), and the connection interface is on the end at the wiring layer (17 in FIG. 1) Exists.
- the via for electrically connecting the wiring layers has a junction interface only at the end on the second surface side.
- adhesion layer which brings the wiring layer and the insulating layer into close contact with each other on the surface on the first surface side of the wiring layer.
- the first terminal has a surface area exposed to the first surface side smaller than a cross-sectional area of a surface in contact with the land.
- the second terminal is provided directly on the wiring layer, and a surface area exposed to the second surface side is larger than a cross-sectional area in contact with the wiring layer.
- the insulating layer is preferably made of one or more insulating materials.
- the insulating layer is preferably made of a plurality of types of insulating materials, and the insulating materials of the first surface and the second surface are preferably the same.
- the first terminal and the second terminal preferably have a configuration in which a plurality of metals are stacked.
- the second terminal is recessed from the surface of the insulating layer on the second surface side.
- the second terminal protrudes from the surface of the insulating layer on the second surface side.
- semiconductor elements 22a and 22b in FIG. 8 are mounted on one side or both sides of the wiring substrate (11 in FIG. 8).
- the semiconductor element and the wiring substrate be mounted by either or both of flip chip connection and wire bonding connection.
- semiconductor elements are flip-chip connected to both sides of the wiring substrate, and that stacking of the vias in the wiring substrate is mainly performed between opposing electrodes of the semiconductor elements mounted on both surfaces.
- a first step (FIG. 10 (c) of forming a first insulating layer (18 in FIG. 10) having an opening on a support (33 in FIG. 10).
- a second step (FIG. 10 (d)) of forming a first terminal (14 of FIG. 10) in the opening, the first insulating layer (18 of FIG. 13), and the first terminal (18).
- Third step (FIGS. 11A to 13A) of forming a metal post to be a wiring layer (16, 17 of FIG. 13) and a via (19 of FIG. 13) on 14) of FIG.
- a multi-layered wiring layer is formed by alternately repeating the third step and the fourth step on (FIG. 13 (b), (c)) and the second insulating layer (18 in FIG. 13) And the sixth step (FIG. 14 (b)) of removing the support (33 in FIG. 14).
- a feed layer is formed on the first insulating layer and the first terminal before forming the wiring layer and the metal post, and then the electrolytic plating is performed using the feed layer. It is preferable to form a wiring layer and the metal post.
- a conductive layer is formed on the support before forming the first insulating layer, and then the first insulating layer is formed on the conductive layer, and the sixth step is performed.
- the interface between the support and the conductor layer is peeled off.
- the seventh step it is preferable to form a second terminal in the opening after forming the opening in the third insulating layer.
- a first step (FIG. 10 (c) of forming a first insulating layer (18 of FIG. 10) having an opening on a support (33 of FIG. 10).
- a second step (FIG. 10 (d)) of forming a first terminal (14 of FIG. 10) in the opening, the first insulating layer (18 of FIG. 13), and the first terminal (18).
- Third step (FIGS. 11A to 13A) of forming a metal post to be a wiring layer (16, 17 of FIG. 13) and a via (19 of FIG. 13) on 14) of FIG.
- FIG. 13 the wiring layers (16 and 17 in FIG. 13), and the metal post (19 in FIG. 13) And polishing the surface of the second insulating layer (18 in FIG. 13) until the metal post (19 in FIG. 13) is exposed.
- FIG. 13 (b) and (c) and the third step and the fourth step are alternately repeated on the second insulating layer (18 in FIG. 13) to form a multilayer wiring layer.
- the fifth step (FIGS. 14A and 17A), the sixth step of mounting the semiconductor element (22a of FIG. 17), and the seventh step of removing the support (33 of FIG. 18) Step (FIG. 18 (b)).
- an eighth step of forming a mold resin on the surface on which the semiconductor element is mounted is included between the sixth step and the seventh step.
- a conductive layer is formed on the support before forming the first insulating layer, and then the first insulating layer is formed on the conductive layer, and the seventh step is performed.
- the interface between the support and the conductor layer is peeled off.
- the semiconductor element be mounted by either or both of flip chip bonding and wire bonding connection.
- FIG. 1A is a first surface side perspective view schematically showing the configuration of a wiring board according to a first embodiment of the present invention
- FIG. 1B is a second surface side perspective view
- FIG. 2 is a partial cross-sectional view schematically showing (a) a normal state and (b) a state in which an external stress is applied to the wiring board according to the first embodiment of the present invention
- FIG. 3 is an enlarged partial cross-sectional view schematically showing the configuration of the wiring board according to the first embodiment of the present invention.
- the insulating layer 18 and the wiring layer 17 are alternately stacked, and a via is formed between the wiring layer 17 and the wiring layer 17.
- 19 is a multilayer wiring board connected by 19;
- the wiring substrate 11 has a first surface 12 and a second surface 13.
- the first surface 12 is provided with a first terminal 14 embedded in a pilot hole formed in the insulating layer 18.
- the second surface 15 is provided with a second terminal 15 embedded in a pilot hole formed in the insulating layer 18.
- the surface of the first terminal 14 on the second surface 13 side is connected to the land 16 via the adhesive layer 21.
- the lands 16 are directly connected to the wiring layer 17 in the same layer.
- the lands 16 are connected to the upper wiring layer 17 through the vias 19.
- the end of the via 19 on the first surface 12 side is directly connected to the land 16 without the adhesion layer 21 interposed, and there is no connection interface.
- the end of the via 19 on the second surface 13 side is connected to the wiring layer 17 via the adhesion layer 21, and a connection interface exists.
- the end on the first surface 12 side of the second terminal 15 is directly connected to the wiring layer 17 without the adhesion layer 21 interposed, and there is no connection interface.
- the adhesion layer 21 is disposed on the surface of the wiring layer 17 on the first surface 12 side as well, except for the region connected to the via 19, and the wiring layer 17 and the insulating layer 18 are in close contact via the adhesion layer 21.
- the adhesion layer 21 is also disposed on the surface of the land 16 on the first surface 12 side except the region connected to the first terminal 14, and the land 16 and the insulating layer 18 are adhered via the adhesion layer 21.
- the first terminal 14 is embedded in a pilot hole formed in the insulating layer 18 and has a structure exposed to the surface of the first surface 12.
- the first terminal 14 is connected to the land 16 via the adhesion layer 21 on the surface on the second surface 13 side.
- the first terminal 14 can be formed by laminating a plurality of metal layers such as copper, nickel, palladium, platinum, gold, silver, tin, and aluminum.
- the surface of the first terminal 14 is made of gold, silver, copper, tin and a solder material in consideration of the wettability of a solder ball (not shown) formed on the surface of the first terminal 14 or the connectivity with a bonding wire.
- the first terminal 14 can be formed by sequentially laminating 3 ⁇ m of nickel and 0.5 ⁇ m of gold (the surface is gold) from the side of the adhesive layer 21.
- the size and position of terminals such as a semiconductor element mounted, an electronic device, and a mounting board, are not restricted to this example. It can be set according to
- the second terminal 15 is embedded in a pilot hole formed in the insulating layer 18 and has a structure exposed to the surface of the second surface 13.
- the second terminal 15 is directly connected to the wiring layer 17 at the end on the first surface 12 side.
- the second terminal 15 can be formed by laminating a plurality of layers of copper, nickel, palladium, platinum, gold, silver, tin, aluminum or the like.
- the surface of the second terminal 15 is, for example, at least one selected from the group consisting of gold, silver, copper, tin and a solder material in consideration of the wettability of a solder ball (not shown) or the connectivity with a bonding wire. It is preferable to form with one kind of metal or alloy.
- the second terminal 15 can be formed by stacking 5 ⁇ m of copper, 3 ⁇ m of nickel, and 0.5 ⁇ m of gold in order from the side of the wiring layer 17 (the surface is gold).
- positioned in the center part about the 2nd terminal 15 was shown in FIG.1 (b), without being restrict
- the main material of the land 16 and the wiring layer 17 is made of copper, gold, nickel, aluminum, silver, palladium, or a plurality of materials. Copper is most preferable in terms of resistance value and cost. In the case of using nickel, it is possible to prevent an interfacial reaction with another material such as an insulating material, and can be used as an inductor or a resistance wire utilizing the characteristics as a magnetic material.
- the land 16 and the wiring layer 17 can be, for example, 5 ⁇ m of copper.
- the land 16 is disposed directly above the first terminal 14 via the adhesive layer 21 and has a larger shape than the first terminal 14, and the adhesive layer 21 is formed on the insulating layer 18 on the outer periphery of the first terminal 14. Covered through.
- the land 16 need not be the same process as the wiring layer 17 as long as it is connected to the wiring layer 17. However, the land 16 is formed in the same process as the wiring layer 17 when existing in the same layer or when simplifying the process. You may
- the lands 16 and the wiring layers 17 can be formed by, for example, a subtractive method, a semi-additive method, a full additive method, or the like.
- the subtractive method is a method in which a resist having a desired pattern is formed on a copper foil provided on a substrate, and after unnecessary copper foil is etched, the resist is peeled off to obtain a desired pattern.
- a feed layer (corresponding to the adhesion layer 21) is formed by electroless plating, sputtering, CVD (Chemical Vapor Deposition) method or the like, and then a resist having a desired pattern is formed to form a resist opening.
- a metal is deposited by electrolytic plating in the portion, and after removing the resist, the power supply layer (corresponding to the adhesion layer 21) exposed is etched to obtain a desired wiring pattern.
- the full additive method after an electroless plating catalyst is adsorbed on a substrate, a pattern is formed with a resist, the catalyst is activated while this resist is left as an insulating film, and openings in the insulating film are formed by electroless plating. It is a method of obtaining a desired wiring pattern by depositing metal.
- a recess serving as a wiring pattern is provided in an insulating layer (not shown) in which the land 16 and the wiring layer 17 are provided, and a feeding layer is formed by electroless plating, sputtering, CVD (Chemical Vapor Deposition) or the like.
- a method may be used in which the recess is embedded by electroless plating or electrolytic plating and the surface is adjusted by polishing.
- the insulating layer 18 can be formed of, for example, a photosensitive or non-photosensitive organic material.
- a photosensitive or non-photosensitive organic material for example, epoxy resin, epoxy acrylate resin, urethane acrylate resin, polyester resin, phenol resin, polyimide resin, BCB (benzocyclobutene), PBO (polybenzoxazole), polynorbornene resin, etc., glass cloth, aramid fiber etc.
- a material obtained by impregnating the woven or non-woven fabric with an epoxy resin, epoxy acrylate resin, urethane acrylate resin, polyester resin, phenol resin, polyimide resin, BCB, PBO, polynorbornene resin or the like can be used.
- the insulating layer 18 can have, for example, a polyimide thickness of 10 ⁇ m (thickness per layer).
- the via 19 has a connection interface at the end on the second surface 13 side.
- interface fracture can be prevented more effectively than in the structure having the connection interface at the end on the first surface 12 side of the via 19.
- a semiconductor device in which a semiconductor element (not shown) is mounted on the wiring substrate 11 having an organic resin, stress is generated after the semiconductor device (not shown) is mounted on the substrate (not shown)
- deformation of the insulating layer 18 having a low elastic modulus occurs more largely than the wiring layer 17 having a high rigidity including the elastic modulus, and stress concentration occurs in the via 19 connecting the wiring layers.
- this concentration of stress is achieved by mounting a semiconductor device (not shown) on a substrate (not shown), from the normal state of FIG. 2 (a), as shown in FIG. 2 (b). It will be in the state of receiving external stress shown by the arrow. Under the state of receiving the external stress, the direction and amount of deformation in each layer changes due to the difference in the pattern of the first terminal 14 and the wiring layer 17. Further, since the insulating layer 19 and the first terminal 14 or the wiring layer 17 (land 16) are firmly joined by the adhesion layer 21, the correction region 20 shown in FIG. 2 is generated in the insulating layer 18.
- the deformation of the insulating layer 18 is corrected by the first terminal 14 and the wiring layer 17 (land 16), and the stress is not concentrated on the bonding interface of the via 19 because the pattern conforms to the respective patterns.
- stress is generated due to the deformation of the insulating layer 18 and the rigidity of the lands 16 and the wiring layer 17 A concentration area 32 occurs.
- the structure having the bonding interface with the via 19 on the side of the adhesion layer 21 can effectively prevent the bonding interface in the via 19 from being broken.
- connection reliability can be improved in the via 19 having a diameter of 20 ⁇ m or less. realizable.
- the adhesion layer 21 does not exist at the boundary between the via 19 and the land 16 and the wiring layer 17 on the first surface 12 side, and the land 16 and the wiring layer 17 and the via 19 are integrally provided.
- the stress concentration region 32 does not have an interface that causes breakage.
- grain boundaries of materials constituting the lands 16 and the wiring layers 17 and the vias 19 are not provided so as to cross the vias 19 in a plane in the stress concentration region 32.
- a metal post is formed in advance by plating at the position of the via 19 or after plating on the entire surface and forming a metal post and a wiring by etching
- polishing is performed to expose the post and use the method as the via 19.
- the oxide on the surface of the base metal is removed by pre-treatment, and during initial plating metal deposition, epitaxial growth follows the grain boundaries of the base metal, so the process is finally divided even if the process is divided
- the land 16 and the wiring layer 17 to be formed are integrated with the via 19. For this reason, it is possible to avoid the state in which the grain boundaries cross in the plane.
- the adhesion layer 21 is made of a material having adhesion to the material of the insulating layer 18, and may be, for example, titanium, tungsten, nickel, tantalum, vanadium, chromium, molybdenum, copper, aluminum, alloys of these, etc., among which titanium Tungsten, tantalum, chromium, molybdenum and their alloys are preferred, and furthermore, titanium, tungsten and their alloys are most preferred.
- the adhesion layer 21 may be on a roughened surface having fine irregularities on the surface of the insulating layer 18, and in this case, good adhesion can be easily obtained even with copper or aluminum.
- the adhesion layer 21 is formed by a sputtering method as a means to further increase the adhesion.
- the adhesion layer 21 exists between the via 19 and the wiring layer 17, and the area of the adhesion layer 21 of the wiring layer 17 is made larger than the bonding area of the via 19 and the wiring layer 17 so that the periphery of the via 19 is obtained. Since the insulating layer 18 including the above is corrected to the wiring layer 17, the wiring layer 17, the via 19 and the insulating layer 18 around the adhesion layer 21 move in substantially the same direction. Thus, the deformation of the bonding interface is reduced, and even if the via 19 has a minute diameter, it is possible to effectively prevent breakage at the bonding interface.
- the first terminal 14 has a thickness up to the middle portion of the insulating layer 18, is covered by the adhesive layer 21 together with the insulating layer 18, and is connected to the land 16 via the adhesive layer 21.
- the adhesion layer 21 is provided on the wall portion of the insulating layer 18 with the thickness of the first terminal 14 up to the middle portion of the insulating layer 18, the function of the connection surface of the first terminal 14 is maintained.
- the insulating layer 18 and the first terminal 14 can be securely in contact with each other.
- the first terminal 14 when a solder material is used for the first terminal 14, there is a possibility that a small amount of wrap around the side wall of the first terminal 14 may occur, but the first terminal 14 is connected to the land 16 via the adhesion layer 21.
- the penetration of the solder material due to the wraparound can be stopped at the portion of the adhesion layer 21, and the embrittlement due to the alloying of the land 16 as the metal layer and the solder material can be effectively prevented.
- the first terminal 14 has a structure in which the area on the side of the land 16 connected via the adhesive layer 21 is larger than the surface area exposed to the first surface 12. This is because the adhesion between the first terminal 14 and the land 16 can be effectively enhanced.
- FIG. 1 shows a structure in which the surfaces of the first terminal 14 and the second terminal 15 are almost flush with the insulating layer 18, a structure recessed from the first surface 12 or the second surface 13 (FIG. 4) It may be a structure (see FIG. 5) or a protruding structure (see FIG. 5).
- the second terminal 15 is 50 ⁇ m with a semiconductor element (not shown) mounted on the second surface 13 side.
- the structure shown in FIG. 4 and FIG. 5 is preferable because connection is required with the following narrow pitch.
- the generation of the void caused by the step of the terminal can be effectively suppressed.
- application as a contact-type switch terminal is also possible by setting it as a recessed structure (refer FIG. 4) and the structure which protrudes (refer FIG. 5).
- the second terminal 15 is recessed from the second surface 13 to make a solder material for connection to a semiconductor element (not shown). Can be effectively prevented. In order to express this effect, it is desirable to secure 0.3 ⁇ m or more as a depression (depth).
- the insulating layer 18 is corrected by the wiring layer 17 to effectively concentrate stress on the connection interface.
- the wiring layer 17 it is possible to realize a wiring board having high connection reliability even if the via 19 has a small diameter.
- FIG. 6 is a partial cross-sectional view schematically showing the configuration of a wiring board according to a second embodiment of the present invention.
- the wiring board according to the second embodiment differs from the configuration of the wiring board (see FIG. 1) according to the first embodiment in that insulating layers 18a and 18b are used as insulating layers and plural kinds of materials are used.
- the other parts are the same as the wiring board according to the first embodiment.
- the structure of the first terminal 14 and the second terminal 15 of FIG. 6 is described as being the same as that of the first embodiment (see FIG. 1), the recessed structure (see FIG. 4) and the protruding structure (see FIG. 5) It does not matter.
- the insulating layer 18 a is an insulating layer disposed on the first surface 12 side.
- the insulating layer 18 b is an insulating layer disposed on the second surface side 13 and the intermediate layer.
- the insulating layers 18a and 18b are formed of, for example, a photosensitive or non-photosensitive organic material.
- the organic material is formed of, for example, epoxy resin, epoxy acrylate resin, urethane acrylate resin, polyester resin, phenol resin, polyimide resin, BCB (benzocyclobutene), PBO (polybenzoxazole), polynorbornene resin, etc., glass cloth, aramid fiber, etc.
- a material obtained by impregnating the woven or non-woven fabric with an epoxy resin, epoxy acrylate resin, urethane acrylate resin, polyester resin, phenol resin, polyimide resin, BCB, PBO, polynorbornene resin or the like can be used.
- materials using polyimide resin, PBO, and woven or non-woven fabric are excellent in mechanical properties such as film strength, tensile modulus of elasticity and elongation at break, so that high reliability can be obtained.
- the insulating layer 18 a may be made of polyimide resin or PBO having high mechanical strength, and woven or non-woven fabric It is preferable to use a material using The insulating layer 18b is inferior in mechanical strength to materials using polyimide resin or PBO, and woven or non-woven fabric, but is excellent in electric characteristics and low loss BCB resin, epoxy resin, epoxy acrylate resin, etc.
- the insulating layer 18a and the insulating layer 18b in this manner, it is possible to effectively prevent the occurrence of cracks after the wiring substrate 11 is mounted on a substrate (not shown), and both mechanical strength and electrical characteristics can be obtained.
- the secured wiring board can be realized.
- the insulating layer 18 a had a thickness of 10 ⁇ m of photosensitive polyimide, and the insulating layer 18 b used a non-photosensitive polyimide having a dielectric constant lower than that of the insulating layer 18 a.
- the insulating layer 18a have a shape in which the area connected to the land 16 via the adhesion layer 21 is larger than the surface area exposed to the first surface 12 of the first terminal 14; It is effective to be formed by
- the second embodiment it is possible to achieve the same effect as the wiring substrate according to the first embodiment, and to realize a wiring substrate in which the mechanical strength and the electrical characteristics of the wiring substrate are compatible.
- FIG. 7 is a partial cross-sectional view schematically showing the configuration of a wiring board according to a third embodiment of the present invention.
- the wiring board according to the third embodiment is the same as the wiring boards according to the first and second embodiments (see FIGS. 1 and 6) except that the insulating layer 18 includes an insulating layer 18a, an insulating layer 18b, an insulating layer 18c, and a plurality of layers. It differs in that it uses different types of materials.
- the other parts are the same as the wiring board (see FIG. 1) according to the first embodiment. Also, although the structure of the first terminal 14 and the second terminal 15 of FIG. 5 is described as the same as the first embodiment (see FIG. 1), the recessed structure (see FIG. 4) and the protruding structure (see FIG. 5) It does not matter.
- the insulating layer 18 a is an insulating layer disposed on the first surface 12 side.
- the insulating layer 18 b is an insulating layer disposed in the intermediate layer.
- the insulating layer 18 c is an insulating layer disposed on the second surface side 13.
- the insulating layers 18a, 18b, and 18c are formed of, for example, a photosensitive or non-photosensitive organic material.
- the organic material is formed of, for example, epoxy resin, epoxy acrylate resin, urethane acrylate resin, polyester resin, phenol resin, polyimide resin, BCB (benzocyclobutene), PBO (polybenzoxazole), polynorbornene resin, etc., glass cloth, aramid fiber, etc.
- a material obtained by impregnating the woven or non-woven fabric with an epoxy resin, epoxy acrylate resin, urethane acrylate resin, polyester resin, phenol resin, polyimide resin, BCB, PBO, polynorbornene resin or the like can be used.
- materials using polyimide resin, PBO, and woven or non-woven fabric are excellent in mechanical properties such as film strength, tensile modulus of elasticity and elongation at break, so that high reliability can be obtained.
- the insulating layer 18a and the insulating layer 18c are made of polyimide resin or PBO having high mechanical strength. It is preferable to use a material using a woven fabric or a non-woven fabric.
- the insulating layer 18b serving as the intermediate layer of the wiring substrate 11 is inferior in mechanical strength to materials using polyimide resin or PBO, and woven or non-woven fabric, but BCB resin and epoxy resin having excellent electrical characteristics and low loss. It is preferable to use an epoxy acrylate resin or the like.
- the insulating layer 18a and the insulating layer 18c have a thickness of 10 ⁇ m of photosensitive polyimide, and the insulating layer 18b uses a non-photosensitive polyimide having a dielectric constant lower than that of the insulating layer 18a.
- the insulating layer 18 a and the insulating layer 18 c may be made of different materials in accordance with the required performance.
- the insulating layer 18a have a shape in which the area connected to the land 16 via the adhesion layer 21 is larger than the surface area exposed to the first surface 12 of the first terminal 14; It is effective to be formed by
- the second terminal 15 may have a main purpose of performing narrow pitch connection with a semiconductor element (not shown), the second terminal 15 exposed on the second surface 13 as shown in FIG. It is desirable that the surface area be larger than the area of the boundary between the second terminal 15 and the wiring layer 17. By adopting this structure, stable connection reliability can be ensured even at a minute connection point required for narrow pitch connection. Furthermore, since the size of the second terminal 15 can be increased within a limited area as compared with the structure in which a connection terminal is separately provided, connection reliability can be more effectively ensured.
- the same effect as that of the wiring substrate according to the first embodiment can be obtained, and the wiring substrate having a further enhanced effect of the mechanical strength described in the second embodiment can be realized, and the compatibility with the electrical characteristics can be achieved. Can be realized.
- connection reliability in narrow pitch connection can be effectively improved.
- a capacitor serving as a noise filter of the circuit may be provided at a desired position of the circuit configured as the wiring board 11.
- the dielectric material constituting the capacitor titanium oxide, tantalum oxide, Al 2 O 3, SiO 2 , ZrO 2, HfO 2 or Nb 2 O metal oxide such as 5, BST (Ba x Sr 1 -x TiO 3 Perovskite-based materials such as PZT) (PbZr x Ti 1-x O 3 ) or PLZT (Pb 1-y La y Zr x Ti 1-x O 3 ) or Bi-based layered compounds such as SrBi 2 Ta 2 O 9 Is preferred.
- PZT Perovskite-based materials
- PZT PZr x Ti 1-x O 3
- PLZT Pb 1-y La y Zr x Ti 1-x O 3
- Bi-based layered compounds such as SrBi 2 Ta 2 O 9 Is preferred.
- an organic material or the like in which an inorganic material or a magnetic material is mixed may be used as a dielectric material constituting the capacitor.
- one or more layers of the insulating layer 18 are made of a material having a dielectric constant of 9 or more, and a capacitor serving as a noise filter of a circuit by forming counter electrodes at desired positions of the upper and lower wiring layers. May be provided.
- the dielectric material constituting the capacitor Al 2 O 3, ZrO 2 , HfO 2 or Nb 2 O metal oxide such as 5, BST (Ba x Sr 1 -x TiO 3), PZT (PbZr x Ti 1- Perovskite-based materials such as x O 3 ) or PLZT (Pb 1 -y La y Zr x Ti 1 -x O 3 ) or Bi-based layered compounds such as SrBi 2 Ta 2 O 9 are preferable.
- BST Ba x Sr 1 -x TiO 3
- PZT PbZr x Ti 1- Perovskite-based materials such as x O 3
- PLZT Pb 1 -y La y Zr x Ti 1 -x O 3
- Bi-based layered compounds such as SrBi 2 Ta 2 O 9 are preferable.
- FIG. 8 is a partial cross-sectional view schematically showing the configuration of a semiconductor device according to a fourth embodiment of the present invention.
- the semiconductor device according to the fourth embodiment is a semiconductor device in which the semiconductor elements 22a and 22b are flip-chip connected to both surfaces of the wiring substrate 11.
- the wiring substrate 11 is a multilayer in which the insulating layer 18 and the wiring layer 17 (the lands 16 in the portion connected to the first terminal 14) are alternately stacked, and the wiring layer 17 and the wiring layer 17 are connected by vias 19 It is a wiring board.
- the wiring substrate 11 has a first surface 12 and a second surface 13.
- the first surface 12 is provided with a first terminal 14 embedded in a pilot hole formed in the insulating layer 18.
- the second surface 15 is provided with a second terminal 15 embedded in a pilot hole formed in the insulating layer 18.
- the surface of the first terminal 14 on the second surface 13 side is connected to the land 16 via the adhesive layer 21.
- the lands 16 are directly connected to the wiring layer 17 in the same layer.
- the lands 16 are connected to the upper wiring layer 17 through the vias 19.
- the wiring layer 17 is connected to the upper wiring layer 17 through the via 19.
- the end of the via 19 on the first surface 12 side is directly connected to the land 16 or the wiring layer 17 without the adhesion layer 21 interposed, and there is no connection interface.
- the end of the via 19 on the second surface 13 side is connected to the wiring layer 17 via the adhesion layer 21, and a connection interface exists.
- the end on the first surface 12 side of the second terminal 15 is directly connected to the wiring layer 17 without the adhesion layer 21 interposed, and there is no connection interface.
- the adhesion layer 21 is disposed on the surface on the first surface 12 side of the wiring layer 17 other than the area connected to the via 19, and the wiring layer 17 and the insulating layer 18 are in close contact via the adhesion layer 21.
- the adhesion layer 21 is also disposed on the surface of the land 16 on the first surface 12 side except the region connected to the first terminal 14, and the land 16 and the insulating layer 18 are adhered via the adhesion layer 21.
- the semiconductor element 22b and the first terminal 14 are connected on the first surface 12 through the solder 23b, and the underfill 24b is filled between the semiconductor element 22b and the wiring board 11.
- solder balls 25 for mounting on a substrate are attached on the first terminals 14 arranged on the outer periphery of the semiconductor element 22 b on the first surface 12.
- the semiconductor element 22a and the second terminal 15 are connected on the second surface 13 through the solder 23a, and the underfill 24a is filled between the semiconductor element 22a and the wiring substrate 11.
- FIG. 8 shows an example in which the same wiring board (see FIG. 1) as in Example 1 is used as the wiring board 11, the wiring board of Example 2 or Example 3 (see FIGS. 6 and 7). ) May be used.
- the semiconductor element 22a is a flip chip connection type semiconductor element.
- the semiconductor element 22a has an electrode (not shown) formed on the surface on one side.
- the electrode (not shown) is electrically connected to the second terminal 15 through the solder 23a.
- An underfill 24 a is filled in the space between the semiconductor element 22 a and the wiring substrate 11.
- the semiconductor element 22 b is a flip chip connection type semiconductor element.
- the semiconductor element 22 b has an electrode (not shown) formed on the surface on one side.
- the electrode (not shown) is electrically connected to the first terminal 14 through the solder 23 b.
- An underfill 24 b is filled in the space between the semiconductor element 22 b and the wiring substrate 11.
- the underfills 24a and 24b are resins used for the purpose of reducing the difference in thermal expansion coefficient between the semiconductor elements 22a and 22b and the wiring board 11 to prevent the solders 23a and 23b from breaking.
- the underfills 24a and 24b are made of an epoxy-based material, and are filled simultaneously with or after the mounting of the semiconductor elements 22a and 22b.
- the underfills 24a and 24b do not necessarily have to be filled as long as the solders 23a and 23b have a strength that can ensure desired reliability.
- the solders 23a and 23b are materials made of tin, lead, indium, zinc, gold or their alloys.
- the material of the solders 23a and 23b can be appropriately selected from lead-tin eutectic solder and lead-free solder material.
- the solders 23a and 23b are formed on the electrodes of the semiconductor elements 22a and 22b by plating, ball transfer, or printing.
- the solder balls 25 are balls made of a solder material for mounting the semiconductor device on a substrate (not shown), and are attached to the first terminals 14 outside the region where the semiconductor element 22 b is mounted.
- the solder balls 25 can be formed on the first terminals 14 by ball transfer or printing. Depending on the mounting form, a structure may be adopted in which not the solder balls 25 but metal pins are soldered. Even when a metal pin is soldered, a joint portion with the solder is formed on the side surface of the first terminal 14.
- the wiring substrate 11 may be reinforced by pasting a rigid frame (stiffener).
- FIG. 8 shows an example of the structure in which the semiconductor elements 22a and 22b are mounted on both sides of the wiring substrate 11, but the present invention is not limited to this.
- One or more elements may be mounted.
- a plurality of semiconductor elements and electronic devices may be mounted on both surfaces of the first surface 12 and the second surface 13.
- a structure is shown in which the inside of the wiring substrate 11 is connected at the shortest distance by the via 19 in which the semiconductor elements 22a and 22b are stacked and the wiring layer 17.
- a structure that can be connected by this shortest distance for example, in a combination of a logic semiconductor element and a memory semiconductor element, a state in which the same semiconductor element is obtained can be realized by a semiconductor device using wiring substrate 11. Since this combination can be performed, the manufacturing cost of the semiconductor element can be effectively suppressed, so that the cost reduction of the entire semiconductor device can be realized.
- the semiconductor element 22a on the second surface 13 is exposed in FIG. 8, the semiconductor element 22a may be protected by molding with an organic resin and the rigidity of the semiconductor device may be secured.
- the second surface 15 may be provided with a second terminal 15 as a connection terminal to a substrate (not shown) or another semiconductor device.
- the insulating layer 18 is corrected by the wiring layer 17, effectively concentrating stress on the connection interface.
- a semiconductor device with high connection reliability can be realized even if the via 19 has a small diameter.
- connection of only the thickness of the wiring substrate 11 can be achieved by stacking the vias 19 and the wiring layer 17 between them.
- FIG. 9 is a partial cross-sectional view schematically showing the configuration of a semiconductor device according to a fifth embodiment of the present invention.
- the semiconductor device according to the fifth embodiment is different from the semiconductor device according to the fourth embodiment in that the form of the mounted semiconductor element is a bonding wire type.
- the semiconductor device according to the fifth embodiment is a semiconductor device in which the semiconductor element 22 is mounted on the wiring board 11 and the wiring board 11 and the semiconductor element 22 are connected by bonding wires 27.
- the wiring substrate 11 is a multilayer in which the insulating layer 18 and the wiring layer 17 (the lands 16 in the portion connected to the first terminal 14) are alternately stacked, and the wiring layer 17 and the wiring layer 17 are connected by vias 19 It is a wiring board.
- the wiring substrate 11 has a first surface 12 and a second surface 13.
- the first surface 12 is provided with a first terminal 14 embedded in a pilot hole formed in the insulating layer 18.
- the second surface 15 is provided with a second terminal 15 embedded in a pilot hole formed in the insulating layer 18.
- the surface of the first terminal 14 on the second surface 13 side is connected to the land 16 via the adhesive layer 21.
- the lands 16 are directly connected to the wiring layer 17 in the same layer.
- the lands 16 are connected to the upper wiring layer 17 through the vias 19.
- the wiring layer 17 is connected to the upper wiring layer 17 through the via 19.
- the end of the via 19 on the first surface 12 side is directly connected to the land 16 or the wiring layer 17 without the adhesion layer 21 interposed, and there is no connection interface.
- the end of the via 19 on the second surface 13 side is connected to the wiring layer 17 via the adhesion layer 21, and a connection interface exists.
- the end on the first surface 12 side of the second terminal 15 is directly connected to the wiring layer 17 without the adhesion layer 21 interposed, and there is no connection interface.
- the adhesion layer 21 is disposed on the surface on the first surface 12 side of the wiring layer 17 other than the area connected to the via 19, and the wiring layer 17 and the insulating layer 18 are in close contact via the adhesion layer 21.
- the adhesion layer 21 is also disposed on the surface of the land 16 on the first surface 12 side except the region connected to the first terminal 14, and the land 16 and the insulating layer 18 are adhered via the adhesion layer 21.
- the semiconductor element 22 is attached to the second surface 13 via the adhesive 26 and is electrically connected to the second terminal 15 by the bonding wire 27.
- a mold 31 is provided to cover the semiconductor element 22 and the bonding wire 27.
- Solder balls 25 for mounting the wiring substrate 11 on a substrate are attached onto the first terminals 14 of the first surface 12.
- FIG. 9 shows an example in which the same wiring board as the first embodiment (see FIG. 1) is used as the wiring substrate 11, the wiring board of the second embodiment or the third embodiment (see FIGS. 6 and 7). You may use.
- the adhesive 26 is provided on the surface (rear surface) of the semiconductor element 22 where the circuit is not formed, and bonds the semiconductor element 22 onto the second surface 13 of the wiring substrate 11.
- an organic material or an Ag paste can be used for the adhesive 26 for the adhesive 26 for the adhesive 26 for the adhesive 26 for example.
- the bonding wire 27 mainly uses a material made of gold, and electrically connects the electrode (not shown) of the semiconductor element 22 and the second terminal 15.
- a material obtained by mixing a silica filler with an epoxy-based material can be used for the mold 31.
- the mold 31 is formed by a method such as a transfer molding method using a mold, a compression molding method, or a printing method so as to cover the wiring of the connection portion with the mounted semiconductor element 22.
- the mold 31 covers the entire side of the wiring board 11 including the semiconductor element 22.
- the structure including the semiconductor element 22 may partially cover the wiring board 11. .
- FIG. 9 shows an example in which the semiconductor element 22 is mounted only on the second surface 13, the semiconductor element may be mounted on the first surface 12 as in the fourth embodiment (see FIG. 8). Only the first surface 12 may be used. When a plurality of semiconductor elements are mounted on both sides or one side, both the bonding wire connection of the fifth embodiment and the flip chip connection of the fourth embodiment may be mixed.
- the semiconductor element 22 since the semiconductor element 22 is covered by the mold 31, the semiconductor element 22 can be protected. Further, by providing the mold 31, the rigidity of the whole semiconductor device can be strengthened, and the reliability of the whole semiconductor device can be improved.
- a capacitor serving as a noise filter of the circuit may be provided at a desired position of the circuit configured as the wiring board 11.
- the dielectric material constituting the capacitor titanium oxide, tantalum oxide, Al 2 O 3, SiO 2 , ZrO 2, HfO 2 or Nb 2 O metal oxide such as 5, BST (Ba x Sr 1 -x TiO 3 Perovskite-based materials such as PZT) (PbZr x Ti 1-x O 3 ) or PLZT (Pb 1-y La y Zr x Ti 1-x O 3 ) or Bi-based layered compounds such as SrBi 2 Ta 2 O 9 Is preferred.
- PZT Perovskite-based materials
- PZT PZr x Ti 1-x O 3
- PLZT Pb 1-y La y Zr x Ti 1-x O 3
- Bi-based layered compounds such as SrBi 2 Ta 2 O 9 Is preferred.
- an organic material or the like in which an inorganic material or a magnetic material is mixed may be used as a dielectric material constituting the capacitor.
- one or more layers of the insulating layer 18 are made of a material having a dielectric constant of 9 or more, and a capacitor serving as a noise filter of a circuit by forming counter electrodes at desired positions of the upper and lower wiring layers. May be provided.
- the dielectric material constituting the capacitor Al 2 O 3, ZrO 2 , HfO 2 or Nb 2 O metal oxide such as 5, BST (Ba x Sr 1 -x TiO 3), PZT (PbZr x Ti 1- Perovskite-based materials such as x O 3 ) or PLZT (Pb 1 -y La y Zr x Ti 1 -x O 3 ) or Bi-based layered compounds such as SrBi 2 Ta 2 O 9 are preferable.
- BST Ba x Sr 1 -x TiO 3
- PZT PbZr x Ti 1- Perovskite-based materials such as x O 3
- PLZT Pb 1 -y La y Zr x Ti 1 -x O 3
- Bi-based layered compounds such as SrBi 2 Ta 2 O 9 are preferable.
- 10 to 14 are process sectional views schematically showing a method of manufacturing a wiring board according to a sixth embodiment of the present invention.
- the method of manufacturing a wiring board according to the sixth embodiment is for manufacturing the wiring board according to the first embodiment (see FIG. 1) and the wiring board according to the second embodiment (see FIG. 6). Note that plasma treatment, cleaning, and heat treatment are appropriately performed between the steps described below.
- the support 33 is prepared, and if necessary, the surface is subjected to treatments such as wet cleaning, dry cleaning, planarization, and roughening (step A1; see FIG. 10A).
- the support body 33 since it is desirable that the support body 33 have appropriate rigidity, for example, semiconductor wafer materials such as silicon, sapphire, GaAs, metal, quartz, glass, ceramic, printed board can be used.
- semiconductor wafer materials such as silicon, sapphire, GaAs, metal, quartz, glass, ceramic, printed board can be used.
- Example 6 a silicon wafer with a thermal oxide film 8 inches (diameter 200 mm) and a thickness of 0.725 mm was used as the support 33.
- the conductor film 28 is formed on the support 33 (step A2; see FIG. 10B).
- the conductive film 28 is a feed layer when using the electrolytic plating method in the step shown in FIG. 10D, a catalyst layer when using an electroless plating layer, or the like.
- the material of the conductor film 28 is preferably made of copper, aluminum, palladium, gold, platinum, silver, an alloy thereof, etc., and is preferably made of a single layer or a laminate of a plurality of metal materials. More desirable. In Example 6, a copper sputtered film was used as the conductor film 28.
- the insulating layer 18 having an opening for forming the first terminal (14 of FIG. 10D) is formed on the conductor film 28 (step A3; see FIG. 10C).
- the insulating layer 18 is formed of, for example, a photosensitive or non-photosensitive organic material.
- the organic material is formed of, for example, epoxy resin, epoxy acrylate resin, urethane acrylate resin, polyester resin, phenol resin, polyimide resin, BCB (benzocyclobutene), PBO (polybenzoxazole), polynorbornene resin, etc., glass cloth, aramid fiber, etc.
- a material obtained by impregnating the woven or non-woven fabric with an epoxy resin, epoxy acrylate resin, urethane acrylate resin, polyester resin, phenol resin, polyimide resin, BCB, PBO, polynorbornene resin or the like can be used.
- materials using polyimide resin, PBO, and woven or non-woven fabric are excellent in mechanical properties such as film strength, tensile modulus of elasticity and elongation at break, so that high reliability can be obtained.
- it is a liquid organic material, it can be formed by a spin coating method, a curtain coating method, a die coating method, a spray method, a printing method or the like.
- a film-like organic material it can be formed by a laminating method, a pressing method or the like.
- the opening of the insulating layer 18 in the portion where the first terminal 14 is to be formed can be formed by photolithography.
- the opening of the insulating layer 18 can be formed by a laser processing method, a dry etching method, or a blast method.
- a photosensitive polyimide resin capable of forming an opening by photolithography was used as the insulating layer 18 with a thickness of 7 ⁇ m.
- the first terminal 14 is formed in the opening of the insulating layer 18 (step A4; see FIG. 10D).
- the first terminal 14 is formed of one or more metal layers.
- the metal layer to be formed can be formed mainly from materials such as copper, nickel, gold, silver, or alloys.
- the first terminal 14 can be formed by electrolytic plating, electroless plating, printing, vapor deposition, or the like using the insulating layer 18 as a mask.
- the feed layer (adhesion layer 21) is also attached to the side wall surface of the opening of the insulating layer 18. It can be in the formed state.
- a feed layer (contact wound 21) is formed to cover the insulating layer 18 and the first terminal 14 (step A5; see FIG. 11A).
- the feed layer (adhesion layer 21) becomes the adhesion layer 21 between the insulating layer 18 and the lands 16 and the wiring layer 17, and wiring formation in the process shown in FIG.
- a laminated structure having a metal surface suitable for for this reason, the feed layer (adhesion layer 21) is formed so as to contact titanium, tungsten, nickel, tantalum, vanadium, chromium, molybdenum, copper, aluminum, alloys thereof, etc.
- the method of forming the feed layer is performed by an electroless plating method, a sputtering method, a CVD (Chemical Vapor Deposition) method, or the like.
- a sputtering method a sputtering method, a CVD (Chemical Vapor Deposition) method, or the like.
- 80 nm thick TiW was formed on the side in contact with the insulating layer 18 by sputtering, and 200 nm copper was formed on the TiW.
- a resist 30 is formed on the feed layer (adhesion layer 21), and patterning is performed so that the portions to be lands (16 in FIG. 11C) and wiring layers (17 in FIG. 11C) are opened.
- Step A6 see FIG. 11 (b)
- the resist 30 is liquid, it can be formed by a spin coating method, a curtain coating method, a die coating method, a spray method, a printing method, or the like.
- the resist 30 is in the form of a film, it can be formed by a lamination method, a press method, or the like.
- the material of the resist 30 is made of an epoxy resin, an epoxy acrylate resin, a phenol resin, a novolac resin, a polyimide resin or the like, and functions as a protective film of a portion where the wiring layer 17 is not formed in the step shown in FIG.
- the patterning is performed by photolithography, direct writing, or the like.
- the resist 30 was formed to have a thickness of 10 ⁇ m using one containing novolac resin as a main component.
- the land 16 and the wiring layer 17 are formed on the feed layer (adhesion layer 21) exposed from the opening of the resist 30 (step A7; see FIG. 11C).
- the main material of the land 16 and the wiring layer 17 is made of any one or more of copper, gold, nickel, aluminum, silver and palladium, and copper is most preferable in terms of resistance value and cost. is there.
- nickel can prevent an interfacial reaction with another material such as an insulating material, and can be used as an inductor or a resistance wire utilizing characteristics as a magnetic material.
- the lands 16 and the wiring layers 17 are formed by the semi-additive method, but may be formed by a method such as a subtractive method or a full additive method, for example.
- the subtractive method is a method in which a resist having a desired pattern is formed on a copper foil provided on a substrate, and after unnecessary copper foil is etched, the resist is peeled off to obtain a desired pattern.
- a pattern is formed with a resist, the catalyst is activated while this resist is left as an insulating film, and openings in the insulating film are formed by electroless plating. It is a method of obtaining a desired wiring pattern by depositing metal.
- a recess serving as a wiring pattern is provided in an insulating layer (not shown) in which the land 16 and the wiring layer 17 are provided, and a feeding layer is formed by electroless plating, sputtering, CVD (Chemical Vapor Deposition) or the like.
- a method may be used in which the recess is embedded by electroless plating or electrolytic plating and the surface is adjusted by polishing.
- a connection in which different materials are included between the land 16 and the metal post (via 19; 19 in FIG. 12B) formed on the wiring layer 17 and the land 16 and the wiring layer 17 Do not form an interface.
- the lands 16 and the wiring layer 17 are made of copper wiring of 5 ⁇ m thickness by electrolytic plating.
- a resist 30 is formed on the feeding layer 21 and the wiring layer 17, and patterning is performed so that a portion to be a metal post (via; 19 in FIG. 12B) is opened (step A8; FIG. 12A) reference).
- the resist 30 is liquid, it can be formed by a spin coating method, a curtain coating method, a die coating method, a spray method, a printing method, or the like.
- the resist 30 is in the form of a film, it can be formed by a lamination method, a press method, or the like.
- the material of the resist 30 is made of an epoxy resin, an epoxy acrylate resin, a phenol resin, a novolac resin, a polyimide resin or the like, and functions as a protective film of a portion where the metal post (via 19) is not formed in the step shown in FIG. .
- the patterning is performed by photolithography, direct writing, or the like.
- the resist 30 was formed to have a thickness of 10 ⁇ m using one containing novolac resin as a main component.
- the resist 30 is added without removing the resist 30 formed in step A6 (see FIG. 11B) in step A8, the resist 30 is formed in step A8 (see FIG. 11B). After the removed resist 30 is removed after step A7, the resist 30 may be newly formed.
- metal posts are formed on the lands 16 exposed from the openings of the resist 30 and the wiring layer 17 (step A9; see FIG. 12B).
- the main material of the metal post (via 19) is made of, for example, one or more materials of copper, gold, nickel, aluminum, silver, palladium, and copper is the most preferable in terms of resistance value and cost. It is suitable.
- nickel can prevent an interfacial reaction with another material such as an insulating material, and can be used as an inductor or a resistance wire utilizing characteristics as a magnetic material.
- copper of 5 ⁇ m thickness was formed as a metal post (via 19) by electrolytic plating.
- the resist 30 is removed (step A10; see FIG. 12C).
- the removal of the resist 30 is performed by a wet etching method using a peeling solution, a dry etching method, or a combination thereof.
- the stripping solution exclusively used for the resist 30 used was used.
- the exposed feed layer (adhesion layer 21) is removed (step A11; see FIG. 13A).
- the removal of the feed layer (adhesion layer 21) is performed by a wet etching method, a dry etching method, or a combination thereof.
- copper and TiW used as the feed layer (adhesion layer 21) were removed by wet etching.
- the insulating layer 18 is formed so as to cover the land 16, the wiring layer 17, the insulating layer 18, and the metal post (via 19) (step A12; see FIG. 13B).
- a photosensitive or non-photosensitive organic material can be used for the insulating layer 18.
- the organic material is formed of, for example, epoxy resin, epoxy acrylate resin, urethane acrylate resin, polyester resin, phenol resin, polyimide resin, BCB (benzocyclobutene), PBO (polybenzoxazole), polynorbornene resin, etc., glass cloth, aramid fiber, etc.
- a material obtained by impregnating the woven or non-woven fabric with an epoxy resin, epoxy acrylate resin, urethane acrylate resin, polyester resin, phenol resin, polyimide resin, BCB, PBO, polynorbornene resin or the like can be used.
- materials using polyimide resin, PBO, and woven or non-woven fabric are excellent in mechanical properties such as film strength, tensile modulus of elasticity and elongation at break, so that high reliability can be obtained.
- it is a liquid organic material, it is formed by a spin coat method, a curtain coat method, a die coat method, a spray method, a printing method or the like.
- the film-form organic material it forms by the lamination method, a press method, etc.
- the non-photosensitive polyimide resin was formed to a thickness of 12 ⁇ m by spin coating.
- the surface of the insulating layer 18 is polished until the metal post (via 19) is exposed (Step A13; see FIG. 13C).
- the insulating layer 18 is polished by a planar polishing method, a CMP (Chemical Mechanical Polishing) method, a grinding method, a buff polishing method, a sand blast method, or the like.
- the insulating layer 18 was polished using a CMP method.
- steps A5 to A13 are repeated to alternately laminate the wiring layers 17 and the insulating layers 18 and to form vias 19 between the wiring layers 17.
- a connected multilayer wiring layer is formed (step A14; see FIG. 14A).
- the adhesion layer 21 is formed on the lower surface of the wiring layer 17, and the second terminal 15 (metal post) is exposed on the second surface 13.
- the second terminal 15 is formed by laminating a plurality of layers of, for example, copper, nickel, palladium, platinum, gold, silver, tin, aluminum or the like.
- the surface of the second terminal 15 is selected from the group consisting of gold, silver, copper, tin and a solder material in consideration of the wettability of the solder ball formed on the surface of the second terminal 15 or the connectivity with the bonding wire. Preferably, it is formed of at least one metal or alloy.
- the second terminal 15 can be formed by wet etching or dry etching after the metal post (second terminal 15) is exposed. In this case, in order to control the etching amount, a method may be performed in which a metal post (second terminal 15) is formed by laminating metal with different etching rates, and the metal exposed to the surface layer is removed.
- the insulating layer 18 is formed after the metal post (the second terminal 15) to be the second terminal 15 is exposed or exposed.
- electrolytic plating, electroless plating, vapor deposition, printing, ink jet This can be achieved by forming the second terminal 15 by a dip method or the like.
- a metal post made of copper (the second terminal 15) was exposed by a CMP method, and then 3 ⁇ m of nickel and 0.5 ⁇ m of gold were laminated in order of the outermost surface being gold by electroless plating.
- the support 33 is removed (step A15; see FIG. 14 (b)).
- a peeling method using a low adhesion layer a method of using a transparent substrate to deteriorate the material in contact with the support substrate with laser light or ultraviolet light, and peeling the support substrate. It is carried out by a method of polishing a supporting substrate, a method of dividing at a desired position by a water cutter or a slicer, or the like.
- peeling was performed using the low adhesion between the thermally oxidized film of the support 33 (silicon) and the conductor film 28 (Cu thin film).
- the conductor film 28 is removed (step A16; see FIG. 14C).
- the removal of the conductor film 28 is performed by a wet etching method or a dry etching method.
- Surface treatment may be performed by a vapor deposition method, a printing method, an inkjet method, a dip method, or the like.
- the first terminal 14 When the first terminal 14 is recessed from the first surface 12, the first terminal 14 can be formed by a wet etching method or a dry etching method after the step of exposing the first terminal 14 or after the step of exposing the first terminal 14. In this case, in order to control the amount of etching, the first terminal 14 may be formed of a stack of metals having different etching rates, and the metal exposed on the surface may be removed.
- the insulating layer 18 is removed so that the first terminal 14 protrudes in the step of exposing or exposing the first terminal 14, or This can be achieved by forming a metal film on the first terminal 14 by electrolytic plating, electroless plating, vapor deposition, printing, inkjet, dipping, or the like after the first terminal 14 is exposed.
- a gold film was formed on the surface of the exposed first terminal 14 (Cu) by electroless plating.
- the wiring boards according to the first and second embodiments can be efficiently manufactured.
- the wiring board according to the second embodiment can be efficiently manufactured by using different materials for the insulating layer 18 on which the first terminal 14 is formed and the other insulating layer 18.
- a manufacturing method of a wiring board concerning Example 7 of the present invention is explained using a drawing.
- 15 and 16 are process sectional views schematically showing a method of manufacturing a wiring board according to the seventh embodiment of the present invention.
- the method of manufacturing a wiring board according to the seventh embodiment corresponds to the wiring board (see FIG. 7) according to the third embodiment of the present invention.
- the method of manufacturing the wiring board according to the seventh embodiment is different from the method of manufacturing the wiring board according to the sixth embodiment in the process of the insulating layer 18 c forming the second surface 13. Note that plasma treatment, cleaning, and heat treatment are appropriately performed between the steps. Note that plasma treatment, cleaning, and heat treatment are appropriately performed between the steps described below.
- step B1 shows the structure of the wiring board according to the first embodiment
- the present invention is not limited to this, and the material of the insulating layer 18 in which the first terminal 14 is embedded as in the wiring board according to the second embodiment.
- the materials of the other insulating layers 18 may be different.
- the insulating layer 18c is formed on the wiring layer 17 and the insulating layer 18 (step B2; see FIG. 15B).
- a photosensitive or non-photosensitive organic material can be used as the insulating layer 18c.
- the organic material is formed of, for example, epoxy resin, epoxy acrylate resin, urethane acrylate resin, polyester resin, phenol resin, polyimide resin, BCB (benzocyclobutene), PBO (polybenzoxazole), polynorbornene resin, etc., glass cloth, aramid fiber, etc.
- a material obtained by impregnating the woven or non-woven fabric with an epoxy resin, epoxy acrylate resin, urethane acrylate resin, polyester resin, phenol resin, polyimide resin, BCB, PBO, polynorbornene resin or the like can be used.
- materials using polyimide resin, PBO, and woven or non-woven fabric are excellent in mechanical properties such as film strength, tensile modulus of elasticity and elongation at break, so that high reliability can be obtained.
- it is a liquid organic material, it can be formed by a spin coating method, a curtain coating method, a die coating method, a spray method, a printing method or the like.
- a film-like organic material it can be formed by a laminating method, a pressing method or the like.
- an opening for forming the second terminal (15 of FIG. 16B) is formed in the insulating layer 18c (step B3; see FIG. 16A).
- the opening of the insulating layer 18c in the portion where the second terminal 15 is formed is formed by photolithography.
- the opening of the insulating layer 18c is formed by a laser processing method, a dry etching method or a blast method. It is formed.
- the photosensitive polyimide resin was used with a thickness of 7 ⁇ m, the photolithography method was adopted.
- the second terminal 15 is formed in the opening of the insulating layer 18c (step B4; see FIG. 16B).
- the second terminal 15 should not form a bonding interface with the wiring layer 17 exposed in the opening of the insulating layer 18c from the viewpoint of stress concentration, and therefore, the same material as the underlying conductive film 28 (for example, copper, aluminum, palladium, gold, platinum, silver, an alloy of these, or the like is preferably used to form by electrolytic plating.
- the height may be adjusted to the same height as the second surface 13 formed of the insulating layer 18c.
- the wiring board (see FIG. 7) according to the third embodiment can be efficiently manufactured.
- FIG. 17 to 19 are process sectional views schematically showing a method of manufacturing a semiconductor device according to an eighth embodiment of the present invention.
- the semiconductor device manufacturing method according to the eighth embodiment is for manufacturing the semiconductor devices (see FIGS. 8 and 9) according to the fourth and fifth embodiments. Note that plasma treatment, cleaning, and heat treatment are appropriately performed between the steps described below.
- an intermediate of the wiring substrate 11 is prepared (step C1; see FIG. 17A).
- the method of manufacturing the wiring board 11 is the same as the method of manufacturing the wiring boards according to the sixth and seventh embodiments.
- the semiconductor element 22a is flip chip connected on the second surface 13 via the solder 23a (step C2; see FIG. 17B).
- the underfill 24a is filled between the second surface 13 and the semiconductor element 22a.
- the solder 23a a material made of tin, lead, indium, zinc, gold or an alloy of these can be used.
- the material of the solder 23a can be appropriately selected from lead-tin eutectic solder and lead-free solder material.
- the solder 23a is formed on the electrode of the semiconductor element 22a by plating, ball transfer, or printing.
- the underfill 24 a is made of an epoxy-based material, and is filled simultaneously with or after the mounting of the semiconductor element 22 a.
- FIG. 17B shows an example of flip chip connection
- connection using a bonding wire may be performed.
- bonding wire connection after the back surface of the semiconductor element (22 in FIG. 9) is bonded to the second surface (13 in FIG. 9) via the adhesive (26 in FIG. 9), the semiconductor element (22 in FIG. ) And the second terminal (15 in FIG. 9) are connected by a bonding wire (27 in FIG. 9).
- the adhesive (26 in FIG. 9) is provided on the surface of the semiconductor element (22 in FIG. 9) where the circuit is not formed, and an organic material, Ag paste or the like can be used.
- the bonding wire (27 in FIG. 9) is mainly made of gold.
- a mold 31 is formed to cover the semiconductor element 22a, the underfill 24a, and the second surface 13 (step C3; see FIG. 18A).
- the mold 31 can use a material in which a silica filler is mixed with an epoxy-based material, and a transfer molding method using a mold so as to cover the wiring of the mounted portion with the semiconductor element 22, compression It is provided by a forming mold method or a printing method.
- the mold 31 covers the entire side of the wiring board 11 including the semiconductor element 22a.
- the structure including the semiconductor element 22a covers a part of the wiring board 11 It may be
- the support 33 and the conductor film 28 are removed (step C4; see FIG. 18B).
- the support 33 is removed by a peeling method using a low adhesion layer, a method of using a transparent substrate to alter the material in contact with the support substrate with laser light or ultraviolet light, and peeling the support substrate, a support substrate It can be carried out by a method of polishing, a method of dividing at a desired position with a water cutter or slicer, or the like.
- peeling is performed using the low adhesion between the thermal oxide film of the support 33 (silicon) and the conductor film 28 (Cu thin film), and if the conductor film 28 remains, the conductor film 28 is removed. Do the removal.
- the conductive film 28 can be removed by a wet etching method or a dry etching method. Electrolytic plating, electroless plating, and so that the surface of the first terminal 14 is made of at least one metal or alloy selected from the group consisting of gold, silver, copper, tin and a solder material after etching. Surface treatment may be performed by a vapor deposition method, a printing method, an inkjet method, a dip method, or the like. When the first terminal 14 is recessed from the first surface 12, the first terminal 14 can be formed by a wet etching method or a dry etching method after the step of exposing the first terminal 14 or after the step of exposing the first terminal 14.
- a method of forming the first terminal 14 by laminating metal with different etching rates and removing the metal exposed in the surface layer may be performed.
- a gold film was formed on the surface of the exposed first terminal 14 (Cu) by electroless plating.
- the semiconductor element 22b is flip-chip connected on the first surface 12 through the solder 23b (step C5; see FIG. 19A).
- the underfill 24b is filled between the first surface 12 and the semiconductor element 22b.
- the solder 23b a material made of tin, lead, indium, zinc, gold or an alloy of these can be used.
- the material of the solder 23b can be appropriately selected from lead-tin eutectic solder and lead-free solder material. It can form by the plating method, ball transfer, and the printing method on the electrode of semiconductor element 22b.
- the underfill 24 b is made of an epoxy-based material, and is filled simultaneously with or after the mounting of the semiconductor element 22 b.
- FIG. 19A shows an example of flip chip connection
- connection may be performed using a bonding wire as in the semiconductor device according to the fifth embodiment (see FIG. 9).
- bonding wire connection after the back surface of the semiconductor element (22 in FIG. 9) is bonded to the second surface (13 in FIG. 9) via the adhesive (26 in FIG. 9), the semiconductor element (22 in FIG. ) And the second terminal (15 in FIG. 9) are connected by a bonding wire (27 in FIG. 9).
- the adhesive (26 in FIG. 9) is provided on the surface of the semiconductor element (22 in FIG. 9) where the circuit is not formed, and an organic material, Ag paste or the like can be used.
- the bonding wire (27 in FIG. 9) is mainly made of gold.
- the solder ball 25 is attached to the first terminal 14 (step C6; see FIG. 19B).
- the solder balls 25 are provided for mounting the semiconductor device on another substrate (not shown).
- the solder balls 25 are balls made of a solder material, and are formed on the first terminals 14 by ball transfer or printing.
- a structure may be adopted in which not a solder ball 25 but a metal pin is soldered. Even when a metal pin is soldered, a joint portion with the solder is formed on the side surface of the first terminal 14.
- the solder ball 25 is attached to the first terminal 14 of the first surface 12 in FIGS. 17 to 19, the second surface 15 may be formed to the second terminal 15.
- the semiconductor devices (see FIGS. 8 and 9) according to the fourth and fifth embodiments can be efficiently manufactured.
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Abstract
Description
本発明は、日本国特許出願:特願2008-002341号(2008年1月9日出願)の優先権主張に基づくものであり、同出願の全記載内容は引用をもって本書に組み込み記載されているものとする。
12 第1面
13 第2面
14 第1端子
15 第2端子(金属ポスト)
16 ランド(配線層)
17 配線層
18、18a、18b、18c 絶縁層
19 ビア(金属ポスト)
20 矯正領域
21 密着層(給電層)
22、22a、22b 半導体素子
23a、23b ハンダ
24a、24b アンダーフィル
25 ハンダボール
26 接着剤
27 ボンディングワイヤ
28 導電体膜
30 レジスト
31 モールド
32 応力集中領域
33 支持体
Claims (25)
- 絶縁層と配線層が交互に積層するとともに、前記配線層間がビアによって電気的に接続された配線基板であって、
第1面に設けられるとともに前記絶縁層に埋設された第1端子と、
前記第1面の反対側の第2面に設けられるとともに前記絶縁層に埋設された第2端子と、
前記絶縁層内に設けられるとともに前記第1端子に接触するランドと、
を備え、
前記ランドと、前記絶縁層を介して設けられる前記配線層との間を電気的に接続するビアは、前記ランド側の端部に接続界面が存在せず、前記配線層側の端部に接続界面が存在することを特徴とする配線基板。 - 前記配線層間を電気的に接続する前記ビアは、前記第2面側の端部にのみ接合界面が存在することを特徴とする請求項1記載の配線基板。
- 前記配線層の前記第1面側の面に前記配線層と前記絶縁層とを密着させる密着層を有することを特徴とする請求項1又は2記載の配線基板。
- 前記ランドの前記第1端子側の面に前記密着層を有することを特徴とする請求項3記載の配線基板。
- 前記第1端子は、前記第1面側に露出する表面積が、前記ランドと接触している面の断面積より小さく構成されていることを特徴とする請求項1乃至4のいずれか一に記載の配線基板。
- 前記第2端子は、前記配線層に直接設けられ、かつ、前記第2面側に露出する表面積が、前記配線層と接触している断面積より大きく構成されることを特徴とする請求項1乃至5のいずれか一に記載の配線基板。
- 前記絶縁層は、1種又は複数種の絶縁材料からなることを特徴とする請求項1乃至6のいずれか一に記載の配線基板。
- 前記絶縁層は、複数種の絶縁材料からなり、前記第1面と前記第2面の絶縁材料が同じであることを特徴とする請求項1乃至7のいずれか一に記載の配線基板。
- 前記第1端子及び前記第2端子は、複数の金属が積層された構成となっていることを特徴とする請求項1乃至8のいずれか一に記載の配線基板。
- 前記第2端子は、前記第2面側の前記絶縁層の表面より窪んでいることを特徴とする請求項1乃至9のいずれか一に記載の配線基板。
- 前記第2端子は、前記第2面側の前記絶縁層の表面より突出していることを特徴とする請求項1乃至9のいずれか一に記載の配線基板。
- 請求項1乃至11に記載の配線基板の片面又は両面に半導体素子を搭載したことを特徴とする半導体装置。
- 前記半導体素子と前記配線基板とが、フリップチップ接続又はワイヤーボンディング接続のいずれか又は両方により搭載されていることを特徴とする請求項12に記載の半導体装置。
- 請求項1乃至11に記載の配線基板の両面に半導体素子がフリップチップ接続され、かつ、両面に搭載された前記半導体素子の対向する電極間を前記配線基板内の前記ビアを積み上げることを主として結線していることを特徴とする半導体装置。
- 支持体上に開口部を有する第1絶縁層を形成する第1の工程と、
前記開口部内に第1端子を形成する第2の工程と、
前記第1絶縁層及び前記第1端子上に、配線層、及びビアとなる金属ポストを形成する第3の工程と、
前記第1絶縁層、前記配線層、及び前記金属ポスト上に第2絶縁層を形成した後、前記金属ポストが露出するまで前記第2絶縁層の表面を研磨する第4の工程と、
前記第2絶縁層上にて前記第3の工程と前記第4の工程を交互に繰り返して多層配線層を形成する第5の工程と、
前記支持体を除去する第6の工程と、
を含むことを特徴とする配線基板の製造方法。 - 前記第3の工程において、前記配線層及び前記金属ポストを形成する前に、前記第1絶縁層及び前記第1端子上に給電層を形成し、その後、前記給電層を用いて電解めっきにより前記配線層及び前記金属ポストを形成することを特徴とする請求項15記載の配線基板の製造方法。
- 前記第1の工程において、前記第1絶縁層を形成する前に、前記支持体上に導電体層を形成し、その後、前記導電体層上に前記第1絶縁層を形成し、
前記第6の工程において、前記支持体と前記導電体層の界面を剥離することを特徴とする請求項15又は16記載の配線基板の製造方法。 - 前記第5の工程の後に、最表面に第3絶縁層を形成する第7の工程を含むことを特徴とする請求項15乃至17のいずれか一に記載の配線基板の製造方法。
- 前記第7の工程において、前記第3絶縁層に開口部を形成した後、前記開口部内に第2端子を形成することを特徴とする請求項18記載の配線基板の製造方法。
- 支持体上に開口部を有する第1絶縁層を形成する第1の工程と、
前記開口部内に第1端子を形成する第2の工程と、
前記第1絶縁層及び前記第1端子上に、配線層、及びビアとなる金属ポストを形成する第3の工程と、
前記第1絶縁層、前記配線層、及び前記金属ポスト上に第2絶縁層を形成した後、前記金属ポストが露出するまで前記第2絶縁層の表面を研磨する第4の工程と、
前記第2絶縁層上にて前記第3の工程と前記第4の工程を交互に繰り返して多層配線層を形成する第5の工程と、
半導体素子を搭載する第6の工程と、
前記支持体を除去する第7の工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記第6の工程と前記第7の工程の間に、前記半導体素子を搭載した面にモールド樹脂を形成する第8の工程を含むことを特徴とする請求項20記載の半導体装置の製造方法。
- 前記第1の工程において、前記第1絶縁層を形成する前に、前記支持体上に導電体層を形成し、その後、前記導電体層上に前記第1絶縁層を形成し、
前記第7の工程において、前記支持体と前記導電体層の界面を剥離することを特徴とする請求項20又は21記載の半導体装置の製造方法。 - 前記第7の工程の後に、露出した前記第1端子上に半導体素子を搭載する第9の工程を含むことを特徴とする請求項20乃至22のいずれか一に記載の半導体装置の製造方法。
- 前記第6の工程、及び前記第9の工程において、半導体素子がフリップチップ接続又はワイヤーボンディング接続のいずれかもしくは両方により搭載されることを特徴とする請求項20乃至23のいずれか一に記載の半導体装置の製造方法。
- 前記第7の工程の後に、外部端子としての半田ボールを搭載する第10の工程を含むことを特徴とする請求項20乃至24のいずれか一に記載の半導体装置の製造方法。
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