WO2009057458A1 - レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 - Google Patents

レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 Download PDF

Info

Publication number
WO2009057458A1
WO2009057458A1 PCT/JP2008/068774 JP2008068774W WO2009057458A1 WO 2009057458 A1 WO2009057458 A1 WO 2009057458A1 JP 2008068774 W JP2008068774 W JP 2008068774W WO 2009057458 A1 WO2009057458 A1 WO 2009057458A1
Authority
WO
WIPO (PCT)
Prior art keywords
forming resist
composition
underlayer film
resist underlayer
forming
Prior art date
Application number
PCT/JP2008/068774
Other languages
English (en)
French (fr)
Inventor
Rikimaru Sakamoto
Yoshiomi Hiroi
Tomohisa Ishida
Takafumi Endo
Original Assignee
Nissan Chemical Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Industries, Ltd. filed Critical Nissan Chemical Industries, Ltd.
Priority to JP2009539003A priority Critical patent/JP5168517B2/ja
Priority to CN2008801110270A priority patent/CN101821677B/zh
Priority to KR1020107011977A priority patent/KR101451762B1/ko
Priority to US12/682,819 priority patent/US8383320B2/en
Publication of WO2009057458A1 publication Critical patent/WO2009057458A1/ja

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/14—Polycondensates modified by chemical after-treatment
    • C08G59/1433—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
    • C08G59/1438—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/66—Polyesters containing oxygen in the form of ether groups
    • C08G63/664—Polyesters containing oxygen in the form of ether groups derived from hydroxy carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

【課題】ドライエッチング速度の選択比が大きく、しかもＡｒＦエキシマレーザーのような短波長でのｋ値及び屈折率ｎが所望の値を示すレジスト下層膜を形成するための組成物を提供することを目的とする。 【解決手段】線状ポリマー及び溶剤を含み、前記線状ポリマーの主鎖は２，４－ジヒドロキシ安息香酸がエステル結合及びエーテル結合を介して導入された単位構造を有するリソグラフィー用レジスト下層膜形成組成物である。
PCT/JP2008/068774 2007-10-31 2008-10-16 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 WO2009057458A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009539003A JP5168517B2 (ja) 2007-10-31 2008-10-16 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
CN2008801110270A CN101821677B (zh) 2007-10-31 2008-10-16 形成抗蚀剂下层膜的组合物和采用该形成抗蚀剂下层膜的组合物形成抗蚀剂图案的方法
KR1020107011977A KR101451762B1 (ko) 2007-10-31 2008-10-16 레지스트 하층막 형성 조성물 및 이를 사용한 레지스트 패턴의 형성방법
US12/682,819 US8383320B2 (en) 2007-10-31 2008-10-16 Resist underlayer film forming composition and method of forming resist pattern using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007283167 2007-10-31
JP2007-283167 2007-10-31

Publications (1)

Publication Number Publication Date
WO2009057458A1 true WO2009057458A1 (ja) 2009-05-07

Family

ID=40590850

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068774 WO2009057458A1 (ja) 2007-10-31 2008-10-16 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法

Country Status (6)

Country Link
US (1) US8383320B2 (ja)
JP (1) JP5168517B2 (ja)
KR (1) KR101451762B1 (ja)
CN (1) CN101821677B (ja)
TW (1) TWI435179B (ja)
WO (1) WO2009057458A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011004721A1 (ja) * 2009-07-07 2011-01-13 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
WO2012067040A1 (ja) * 2010-11-17 2012-05-24 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
WO2012169580A1 (ja) * 2011-06-10 2012-12-13 日産化学工業株式会社 ブロック共重合体とレジスト下層膜形成組成物
WO2014109186A1 (ja) * 2013-01-09 2014-07-17 日産化学工業株式会社 レジスト下層膜形成組成物
US10583036B2 (en) 2013-01-17 2020-03-10 Kanae Technos Co., Ltd. Topical adhesive skin patch
KR20210040357A (ko) 2018-07-31 2021-04-13 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물
JP2022543466A (ja) * 2019-08-08 2022-10-12 ピーピージー・インダストリーズ・オハイオ・インコーポレイテッド ポリオールポリマー、そのようなポリマーの調製方法、およびそれを含有するコーティング組成物

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101414278B1 (ko) * 2009-11-13 2014-07-02 제일모직 주식회사 레지스트 하층막용 고분자, 이를 포함하는 레지스트 하층막 조성물 및 소자의 패턴 형성 방법
NL2008041A (en) * 2011-01-28 2012-07-31 Asml Netherlands Bv Lithographic apparatus and methods for determining an improved configuration of a lithographic apparatus.
CN103415809B (zh) * 2011-03-15 2017-03-15 日产化学工业株式会社 形成抗蚀剂下层膜的组合物及使用该组合物的抗蚀剂图案的形成方法
CN107111234B (zh) * 2014-10-21 2020-08-04 日产化学工业株式会社 抗蚀剂下层膜形成用组合物
JP6525376B2 (ja) * 2015-08-31 2019-06-05 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ オーバーコートされたフォトレジストと共に使用するためのコーティング組成物
JP6699168B2 (ja) * 2015-12-25 2020-05-27 日産化学株式会社 レジスト下層膜形成用組成物及びレジストパターンの形成方法
KR102374269B1 (ko) * 2016-03-09 2022-03-15 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물 및 이것을 이용한 레지스트 패턴의 형성방법
US10203602B2 (en) * 2016-09-30 2019-02-12 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
JP6853716B2 (ja) * 2017-03-31 2021-03-31 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法
WO2024024490A1 (ja) * 2022-07-29 2024-02-01 日産化学株式会社 レジスト下層膜形成用組成物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004212907A (ja) * 2003-01-09 2004-07-29 Nissan Chem Ind Ltd エポキシ化合物誘導体を含む反射防止膜形成組成物
JP2005321752A (ja) * 2004-04-09 2005-11-17 Nissan Chem Ind Ltd イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物
WO2006115074A1 (ja) * 2005-04-19 2006-11-02 Nissan Chemical Industries, Ltd. エチレンジカルボニル構造を有するポリマーを含むリソグラフィー用反射防止膜形成組成物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7103380A (ja) * 1971-03-13 1972-09-15
KR100945435B1 (ko) 2001-08-20 2010-03-05 닛산 가가쿠 고교 가부시키 가이샤 리소그래피용 반사방지막 형성 조성물
US7323289B2 (en) 2002-10-08 2008-01-29 Brewer Science Inc. Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties
CN101268419A (zh) * 2005-09-27 2008-09-17 日产化学工业株式会社 含有异氰脲酸化合物与苯甲酸化合物的反应生成物的形成防反射膜的组合物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004212907A (ja) * 2003-01-09 2004-07-29 Nissan Chem Ind Ltd エポキシ化合物誘導体を含む反射防止膜形成組成物
JP2005321752A (ja) * 2004-04-09 2005-11-17 Nissan Chem Ind Ltd イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物
WO2006115074A1 (ja) * 2005-04-19 2006-11-02 Nissan Chemical Industries, Ltd. エチレンジカルボニル構造を有するポリマーを含むリソグラフィー用反射防止膜形成組成物

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011004721A1 (ja) * 2009-07-07 2012-12-20 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
TWI462960B (zh) * 2009-07-07 2014-12-01 Nissan Chemical Ind Ltd 光阻下層膜形成組成物及使用其之光阻圖型之形成方法
WO2011004721A1 (ja) * 2009-07-07 2011-01-13 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
KR20140006794A (ko) 2010-11-17 2014-01-16 닛산 가가쿠 고교 가부시키 가이샤 레지스트 하층막 형성 조성물 및 이를 이용한 레지스트 패턴의 형성방법
US8722840B2 (en) 2010-11-17 2014-05-13 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition, and method for forming resist pattern using the same
JP5610168B2 (ja) * 2010-11-17 2014-10-22 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
WO2012067040A1 (ja) * 2010-11-17 2012-05-24 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
WO2012169580A1 (ja) * 2011-06-10 2012-12-13 日産化学工業株式会社 ブロック共重合体とレジスト下層膜形成組成物
JPWO2012169580A1 (ja) * 2011-06-10 2015-02-23 日産化学工業株式会社 ブロック共重合体とレジスト下層膜形成組成物
WO2014109186A1 (ja) * 2013-01-09 2014-07-17 日産化学工業株式会社 レジスト下層膜形成組成物
US9534140B2 (en) 2013-01-09 2017-01-03 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition
JPWO2014109186A1 (ja) * 2013-01-09 2017-01-19 日産化学工業株式会社 レジスト下層膜形成組成物
US10583036B2 (en) 2013-01-17 2020-03-10 Kanae Technos Co., Ltd. Topical adhesive skin patch
KR20210040357A (ko) 2018-07-31 2021-04-13 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물
JP2022543466A (ja) * 2019-08-08 2022-10-12 ピーピージー・インダストリーズ・オハイオ・インコーポレイテッド ポリオールポリマー、そのようなポリマーの調製方法、およびそれを含有するコーティング組成物
JP7460751B2 (ja) 2019-08-08 2024-04-02 ピーピージー・インダストリーズ・オハイオ・インコーポレイテッド ポリオールポリマー、そのようなポリマーの調製方法、およびそれを含有するコーティング組成物

Also Published As

Publication number Publication date
TW200937126A (en) 2009-09-01
US20100221657A1 (en) 2010-09-02
CN101821677B (zh) 2012-07-04
JPWO2009057458A1 (ja) 2011-03-10
CN101821677A (zh) 2010-09-01
KR20100095550A (ko) 2010-08-31
KR101451762B1 (ko) 2014-10-16
US8383320B2 (en) 2013-02-26
JP5168517B2 (ja) 2013-03-21
TWI435179B (zh) 2014-04-21

Similar Documents

Publication Publication Date Title
WO2009057458A1 (ja) レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
WO2009008446A1 (ja) レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
WO2009041400A1 (ja) ネガ型レジスト組成物及びそれを用いたレジストパターン形成方法
TW200951625A (en) Resist underlayer film forming composition and method for forming resist pattern by use of said composition
US8017193B1 (en) Monomeric formulation for making polymer waveguides
WO2007124092A3 (en) Photoacid generator compounds and compositions
SG158792A1 (en) Chemically-amplified positive resist composition and patterning process thereof
EP2244125A3 (en) Resist composition
JP4651283B2 (ja) 不飽和カルボン酸ヘミアセタールエステル、高分子化合物及びフォトレジスト用樹脂組成物
WO2009011289A1 (ja) ポジ型レジスト組成物およびそれを用いたパターン形成方法
TW200628992A (en) Anti-reflective coating forming composition for lithography containing sulfonic acid ester
EP2095189A1 (en) Composition for forming resist foundation film containing low molecular weight dissolution accelerator
KR101808128B1 (ko) 잉크젯 토출 방법, 패턴 형성 방법, 및 패턴
DE10393820T5 (de) Positiv arbeitende Photoresistzusammensetzung auf Siliconbasis vom chemischen Amplifizierungstyp
TW200613921A (en) Composition for formation of antireflection film, antireflection film formed of the composition for formation of antireflection film, and method for forming resist pattern by using the composition for formation of antireflection film
WO2008078677A1 (ja) 反射防止膜形成用組成物およびそれを用いたパターン形成方法
WO2012081863A3 (ko) 감광성 고분자, 이를 포함하는 포토레지스트 조성물 및 이를 이용한 레지스트 패턴 형성방법
SG155061A1 (en) Photoresist composition for deep ultraviolet lithography
KR20090032847A (ko) 광산발생제 및 이를 포함하는 화학증폭형 레지스트 조성물
TWI534182B (zh) 聚矽倍半氧烷共聚物及包含該共聚物之光敏樹脂
WO2002069043A3 (en) Low absorbing resists for 157 nm lithography
JP2007284381A (ja) フォトレジスト用（メタ）アクリル系単量体、その高分子化合物及びフォトレジスト用樹脂組成物
KR20140024352A (ko) 중합체 및 그 제조 방법
SG191477A1 (en) Additive for resist and resist composition comprising same
TW200517692A (en) Optical component formation method

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880111027.0

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08845487

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009539003

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 12682819

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20107011977

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 08845487

Country of ref document: EP

Kind code of ref document: A1