WO2012081863A3 - 감광성 고분자, 이를 포함하는 포토레지스트 조성물 및 이를 이용한 레지스트 패턴 형성방법 - Google Patents

감광성 고분자, 이를 포함하는 포토레지스트 조성물 및 이를 이용한 레지스트 패턴 형성방법 Download PDF

Info

Publication number
WO2012081863A3
WO2012081863A3 PCT/KR2011/009503 KR2011009503W WO2012081863A3 WO 2012081863 A3 WO2012081863 A3 WO 2012081863A3 KR 2011009503 W KR2011009503 W KR 2011009503W WO 2012081863 A3 WO2012081863 A3 WO 2012081863A3
Authority
WO
WIPO (PCT)
Prior art keywords
same
photosensitive polymer
resist pattern
composition including
photoresist composition
Prior art date
Application number
PCT/KR2011/009503
Other languages
English (en)
French (fr)
Other versions
WO2012081863A2 (ko
Inventor
오승근
이재우
김정식
이정열
김재현
Original Assignee
주식회사 동진쎄미켐
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동진쎄미켐 filed Critical 주식회사 동진쎄미켐
Publication of WO2012081863A2 publication Critical patent/WO2012081863A2/ko
Publication of WO2012081863A3 publication Critical patent/WO2012081863A3/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/38—Esters containing sulfur
    • C08F220/382—Esters containing sulfur and containing oxygen, e.g. 2-sulfoethyl (meth)acrylate

Abstract

반도체 소자 형성을 위한 포토리쏘그래피 공정에서, 극자외선(Extreme ultraviolet; EUV) 파장의 광은 통과시키되, 극자외선 보다 장파장의 광은 차단시키는 감광성 고분자, 이를 포함하는 포토레지스트 조성물 및 이를 이용한 레지스트 패턴 형성방법이 개시된다. 상기 감광성 고분자는 청구항 1의 화학식 1로 표시된다.
PCT/KR2011/009503 2010-12-13 2011-12-09 감광성 고분자, 이를 포함하는 포토레지스트 조성물 및 이를 이용한 레지스트 패턴 형성방법 WO2012081863A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0127028 2010-12-13
KR1020100127028A KR101821704B1 (ko) 2010-12-13 2010-12-13 감광성 고분자, 이를 포함하는 포토레지스트 조성물 및 이를 이용한 레지스트 패턴 형성방법

Publications (2)

Publication Number Publication Date
WO2012081863A2 WO2012081863A2 (ko) 2012-06-21
WO2012081863A3 true WO2012081863A3 (ko) 2012-08-23

Family

ID=46245196

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/009503 WO2012081863A2 (ko) 2010-12-13 2011-12-09 감광성 고분자, 이를 포함하는 포토레지스트 조성물 및 이를 이용한 레지스트 패턴 형성방법

Country Status (2)

Country Link
KR (1) KR101821704B1 (ko)
WO (1) WO2012081863A2 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101983672B1 (ko) * 2012-11-07 2019-05-30 삼성전자 주식회사 반도체 장치의 제조 방법
JP6267532B2 (ja) 2014-02-14 2018-01-24 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
KR102432661B1 (ko) 2015-07-07 2022-08-17 삼성전자주식회사 극자외선용 포토레지스트 조성물 및 이를 이용하는 포토레지스트 패턴의 형성 방법
US9957339B2 (en) 2015-08-07 2018-05-01 Rohm And Haas Electronic Materials Llc Copolymer and associated layered article, and device-forming method
US9815930B2 (en) 2015-08-07 2017-11-14 Rohm And Haas Electronic Materials Llc Block copolymer and associated photoresist composition and method of forming an electronic device
CN113943402B (zh) * 2020-07-15 2022-10-21 上海大学 一种聚吩噻嗪类衍生物及其制备方法和应用
CN114149349A (zh) * 2021-12-21 2022-03-08 江苏汉拓光学材料有限公司 一种光致产酸剂、光致产酸剂及其中间体的制备方法
CN114517043B (zh) * 2022-01-27 2022-12-16 福建泓光半导体材料有限公司 含有有机刚性笼状化合物的底部抗反射涂料组合物及其制备方法和微电子结构的形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004271844A (ja) * 2003-03-07 2004-09-30 Fuji Photo Film Co Ltd ポジ型レジスト組成物
KR20080085235A (ko) * 2006-02-17 2008-09-23 도오꾜오까고오교 가부시끼가이샤 액침 노광용 레지스트 조성물 및 레지스트 패턴 형성 방법
JP2010163604A (ja) * 2008-12-15 2010-07-29 Central Glass Co Ltd 含フッ素重合性単量体、含フッ素重合体、レジスト材料及びパターン形成方法
JP2010275498A (ja) * 2009-06-01 2010-12-09 Central Glass Co Ltd 含フッ素化合物、含フッ素高分子化合物、レジスト組成物、トップコート組成物及びパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004271844A (ja) * 2003-03-07 2004-09-30 Fuji Photo Film Co Ltd ポジ型レジスト組成物
KR20080085235A (ko) * 2006-02-17 2008-09-23 도오꾜오까고오교 가부시끼가이샤 액침 노광용 레지스트 조성물 및 레지스트 패턴 형성 방법
JP2010163604A (ja) * 2008-12-15 2010-07-29 Central Glass Co Ltd 含フッ素重合性単量体、含フッ素重合体、レジスト材料及びパターン形成方法
JP2010275498A (ja) * 2009-06-01 2010-12-09 Central Glass Co Ltd 含フッ素化合物、含フッ素高分子化合物、レジスト組成物、トップコート組成物及びパターン形成方法

Also Published As

Publication number Publication date
KR101821704B1 (ko) 2018-01-25
WO2012081863A2 (ko) 2012-06-21
KR20120065745A (ko) 2012-06-21

Similar Documents

Publication Publication Date Title
WO2012081863A3 (ko) 감광성 고분자, 이를 포함하는 포토레지스트 조성물 및 이를 이용한 레지스트 패턴 형성방법
EP2666057A4 (en) CHEMICALLY REINFORCED PAINT COMPOSITION, COMPOSITE PAINTED FILM, PAINT-COATED MASK ROLLS, METHOD FOR FORMING A LACQUER STRUCTURE, PHOTOMASK AND POLYMER CONNECTION
EP2521941A4 (en) Pattern Forming Device, Sensitive Resin Compound and Resist Film Versus Actinic Radiation or Radiation
EP2221666A4 (en) LIGHT-SENSITIVE RESIN COMPOSITION OF THE POSITIVE TYPE, METHOD FOR PRODUCING A RESISTANCE STRUCTURE, SEMICONDUCTOR ARRANGEMENT AND ELECTRONIC ARRANGEMENT
EP4023636A4 (en) ACTINIC-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RESIST FILM AND METHOD FOR PRODUCING AN ELECTRONIC DEVICE
WO2011072307A3 (en) Compositions comprising base-reactive component and processes for photolithography
EP3348542A4 (en) COMPOUND, RESIN, RESIST COMPOSITION AND RADIATION SENSITIVE COMPOSITION, METHOD FOR FORMING A RESIST STRUCTURE, METHOD FOR PRODUCING AN AMORPHOUS FILMS, MATERIAL FOR FORMING A lithographic LAYER FILMS, COMPOSITION FOR PRODUCING A lithographic LAYER FILMS, METHOD FOR PRODUCING A CONTROL STRUCTURE AND CLEANING PROCESS
EP3345889A4 (en) COMPOUND AND METHOD FOR PRODUCING THE SAME, COMPOSITION, COMPOSITION FOR FORMING OPTICAL COMPONENT, COMPOSITION FOR FORMING LITHOGRAPHIC FILM, RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, RADIATION-SENSITIVE COMPOSITION, PROCESS FOR PRODUCING FILM AMORPHOUS, MATERIAL FOR FORMING LITHOGRAPHIC UNDERLAY FILM, COMPOSITION FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, PROCESS FOR PRODUCING LITHOGRAPHIC UNDERLAYER FILM, METHOD FOR FORMING CIRCUIT PATTERN, AND METHOD FOR PURIFICATION
EP2500775A3 (en) Patterning process and composition for forming silicon-containing film usable therefor
TWI366004B (en) Microlithography projection optical system, microlithographic tool comprising such an optical system, method for microlithographic production of microstructured components using such a microlithographic tool, microstructured component being produced by s
WO2012067755A3 (en) Photoresist composition for negative development and pattern forming method using thereof
WO2008105531A1 (ja) ペリクルフレーム装置、マスク、露光方法及び露光装置並びにデバイスの製造方法
NL2001369A1 (nl) Werkwijze voor maskerloze deeltjesbundelbelichting.
TW200943007A (en) Method of providing alignment marks, device manufacturing method and lithographic apparatus
AU2005337438B2 (en) Hierarchical nanopatterns by nanoimprint lithography
EP2715451A4 (en) PATTERN FORMATION METHOD, ACTINIC OR RADIATION SENSITIVE SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
EP2689292A4 (en) METHOD FOR FORMING A LACQUER STRUCTURE, LACQUER STRUCTURE, NETWORKABLE CHEMICALLY REINFORCED NEGATIVE PAINT COMPOSITION FOR THE DEVELOPMENT OF AN ORGANIC SOLVENT, PAINTFILM AND PAINT-COATED MASK ROLLERS
EP3919528A4 (en) ACTINIC RADIATION SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MAKING A PATTERN, AND METHOD OF MAKING AN ELECTRONIC DEVICE
WO2010084372A8 (en) A photoresist image-forming process using double patterning
WO2010067905A3 (en) Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same
IL284859A (en) A radiation-sensitive or actinic beam-sensitive resin composition, a resistant layer, a method for creating a pattern and a method for producing an electronic device
IL217702A0 (en) Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the same
EP2707776A4 (en) POSITIVE RESIST COMPOSITION AND RESIST FILM, FLAN FOR MASK COATED WITH RESERVE, METHOD OF FORMING RESERVE PATTERNS, AND PHOTOGRAPHIC MASK USING EACH COMPOSITION
TWI348594B (en) Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process
EP2864839A4 (en) PATTERN FORMATION METHOD, ACTINIC RADIATION OR RADIATION SENSITIVE RESIN COMPOSITION, RESISTIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11849275

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11849275

Country of ref document: EP

Kind code of ref document: A2